Circuit of high-voltage amplification system and high-voltage amplification system

Abstract

The invention provides a circuit of a high-voltage amplification system and the high-voltage amplification system. The circuit comprises a control circuit, a first high-voltage isolation amplifier, a second high-voltage isolation amplifier and a high-voltage output circuit, the control circuit is used for processing an input signal and then generating a driving signal; the first high-voltage isolation amplifier is connected with the output end of the control circuit; the second high-voltage isolation amplifier is connected with the output end of the control circuit; the high-voltage output circuit comprises an upper bridge arm module and a lower bridge arm module which are connected with each other, the input end of the upper bridge arm module is connected with the output end of the first high-voltage isolation amplifier, and the input end of the lower bridge arm module is connected with the output end of the second high-voltage isolation amplifier; the upper bridge arm module and the lower bridge arm module comprise a plurality of switching tubes which are connected in series, and the voltage of the output end of each switching tube meets the voltage-sharing requirement. According to the embodiment of the invention, the circuit of the high-voltage amplification system is simpler, the size is smaller, and the efficiency is higher.

Description

Technical Field

[0001] The present invention relates to the technical field of high-voltage amplifiers, and in particular to a circuit of a high-voltage amplifier system and a high-voltage amplifier system. Background Art

[0002] A high-voltage amplifier is an electronic device that can amplify input signals to very high voltages (such as thousands or tens of kilovolts). It is widely used in fields requiring high-voltage drive or high-precision signal processing, such as electron beam lithography machines, photolithography machines, electrostatic chucks, piezoelectric device drivers, radar equipment, testing the dielectric strength and insulation properties of materials, and quantum computing. Currently, high-voltage amplifiers have disadvantages such as complex principles, large size, high power consumption, low efficiency, and difficulty in heat dissipation. How to provide a simpler and more efficient high-voltage amplifier is an urgent problem that needs to be solved. It should be pointed out that the information disclosed in the background technology section of this application is only intended to deepen the understanding of the general background technology of this application, and should not be regarded as an admission or any form of implication that the information constitutes prior art already known to those skilled in the art. Summary of the Invention

[0003] The purpose of the present invention is to solve at least one of the technical problems existing in the prior art and to provide a circuit of a high-voltage amplifier system and a high-voltage amplifier system, so that the circuit of the high-voltage amplifier system is simpler, smaller in size and more efficient.

[0004] In a first aspect, an embodiment of the present invention provides a circuit of a high-voltage amplification system, the circuit comprising: A control circuit, configured to generate a drive signal after processing an input signal; a first high-voltage isolation amplifier connected to an output end of the control circuit; a second high-voltage isolation amplifier connected to an output terminal of the control circuit; A high-voltage output circuit, comprising an upper bridge arm module and a lower bridge arm module connected to each other, wherein the input end of the upper bridge arm module is connected to the output end of the first high-voltage isolation amplifier, and the input end of the lower bridge arm module is connected to the output end of the second high-voltage isolation amplifier; The upper bridge arm module and the lower bridge arm module include a plurality of switch tubes connected in series, and the output terminal voltage of each switch tube meets the voltage equalization requirement.

[0005] The circuit of the high-voltage amplification system provided by an embodiment of the present invention has at least the following beneficial effects: a control circuit and a high-voltage output circuit are provided in the circuit, and a first high-voltage isolation amplifier and a second high-voltage isolation amplifier are provided between the control circuit and the high-voltage output circuit, thereby achieving isolated signal transmission, simplifying the circuit structure, and improving the efficiency and quality of signal transmission. Moreover, the output terminal voltage of each switching tube in the upper bridge arm module and the lower bridge arm module of the high-voltage output circuit meets the voltage sharing requirements, which can improve the reliability and stability of the circuit and improve the overall thermal efficiency and heat dissipation performance of the circuit. Therefore, the circuit structure of the high-voltage amplification system of the embodiment of the present invention is simpler, smaller in size, and more efficient.

[0006] In the circuit of the above-mentioned high-voltage amplification system, the control circuit includes a comparator, a regulator, a first voltage-dividing resistor, a second voltage-dividing resistor, and an amplifier circuit. The input end of the comparator is used to receive an input signal and a feedback signal and compare the input signal and the feedback signal. The output end of the comparator is connected to the input end of the regulator. The output end of the regulator is respectively connected to the input end of the first high-voltage isolation amplifier and the input end of the second high-voltage isolation amplifier. The connection point of the first voltage-dividing resistor and the second voltage-dividing resistor is connected to the input end of the amplifier circuit.

[0007] In the circuit of the above-mentioned high-voltage amplification system, the amplification circuit is a filtering amplification circuit.

[0008] In the circuit of the above-mentioned high-voltage amplification system, the upper bridge arm module includes n switching tubes connected in series, and the lower bridge arm module includes m switching tubes connected in series. A resistor is also connected between the two output ends of each switching tube, and the resistance value of the resistor corresponding to each switching tube is the same; wherein n and m are both positive integers greater than 0.

[0009] In the circuit of the above-mentioned high-voltage amplification system, the switching tubes are MOS tubes, and the drain-source voltages of each of the MOS tubes are equal.

[0010] In the circuit of the above-mentioned high-voltage amplification system, the conduction states of the upper bridge arm module and the lower bridge arm module are opposite; when the first high-voltage isolation amplifier is a non-inverting isolation amplifier, the second high-voltage isolation amplifier is an inverting isolation amplifier; or, when the first high-voltage isolation amplifier is an inverting isolation amplifier, the second high-voltage isolation amplifier is a non-inverting isolation amplifier.

[0011] In the circuit of the above-mentioned high-voltage amplification system, when the switching tube is a MOS tube, the output end of the first high-voltage isolation amplifier is connected to the MOS tube at the bottom end of the upper bridge arm module to control the conduction state of the upper bridge arm module; the output end of the second high-voltage isolation amplifier is connected to the MOS tube at the top end of the lower bridge arm module to control the conduction state of the lower bridge arm module.

[0012] In the circuit of the above-mentioned high-voltage amplification system, the switch tube is a MOS tube, and a voltage regulator tube is provided between the gate and source of each MOS tube.

[0013] In the circuit of the above-mentioned high-voltage amplification system, the switch tubes of the upper bridge arm module and the lower bridge arm module include at least one of the following situations: The switch tubes of the upper bridge arm module and the lower bridge arm module are both NMOS tubes; Alternatively, the switch tubes of the upper bridge arm module and the lower bridge arm module are both PMOS tubes; Alternatively, the switch tube of the upper bridge arm module is an NMOS tube, and the switch tube of the lower bridge arm module is a PMOS tube; Alternatively, the switch tube of the upper bridge arm module is a PMOS tube, and the switch tube of the lower bridge arm module is an NMOS tube.

[0014] In a second aspect, an embodiment of the present invention provides a high-voltage amplification system, comprising the circuit as described in the embodiment of the first aspect above.

[0015] The high-voltage amplification system provided by an embodiment of the present invention has at least the following beneficial effects: since the high-voltage amplification system includes the circuit of the above-mentioned embodiment, a control circuit and a high-voltage output circuit are provided in the circuit, and a first high-voltage isolation amplifier and a second high-voltage isolation amplifier are provided between the control circuit and the high-voltage output circuit, signal isolation transmission can be achieved, the circuit structure is simplified, and the efficiency and quality of signal transmission are improved. Moreover, the output terminal voltage of each switching tube in the upper bridge arm module and the lower bridge arm module of the high-voltage output circuit meets the voltage equalization requirements, which can improve the reliability and stability of the circuit and improve the overall thermal efficiency and heat dissipation performance of the circuit. Therefore, the circuit structure of the high-voltage amplification system of the embodiment of the present invention is simpler, smaller in size, and more efficient.

[0016] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained through the structures particularly pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be further described below with reference to the accompanying drawings and embodiments; Figure 11 is a schematic structural diagram of a circuit of a high-voltage amplification system provided by an embodiment of the present invention; Figure 2 1 is a schematic structural diagram of a circuit of another high-voltage amplification system provided by an embodiment of the present invention; Figure 3 1 is a schematic structural diagram of a circuit of another high-voltage amplification system provided by an embodiment of the present invention; Figure 4 It is a schematic structural diagram of a circuit of another high-voltage amplification system provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0018] This section will describe in detail the specific embodiments of the present invention. The preferred embodiments of the present invention are shown in the accompanying drawings. The purpose of the accompanying drawings is to supplement the description of the text part of the specification with graphics, so that people can intuitively and vividly understand each technical feature and the overall technical solution of the present invention, but it should not be understood as a limitation on the scope of protection of the present invention.

[0019] It should be understood that in the description of the embodiments of the present invention, if there is a description of "first", "second", etc., it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features. "At least one" means one or more, "more" means more than two, greater than, less than, exceed, etc. are understood to exclude the number itself, above, below, within, etc. are understood to include the number itself, and "several" means one or more, unless otherwise clearly and specifically defined. "And / or" describes the association relationship of associated objects, indicating that three relationships can exist. It can be understood that A and / or B can mean the existence of A alone, the existence of A and B at the same time, or the existence of B alone. A and B can be singular or plural.

[0020] The terms “comprises,” “includes,” “contains,” and “has” are inclusive and, thus, specify the presence of the stated features, steps, operations, elements, and / or parts, but do not preclude the presence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof.

[0021] Furthermore, unless otherwise expressly specified or limited, the term "connected" should be understood broadly. For example, it can mean fixed or movable, detachable or non-detachable, or integrally connected; it can mean mechanical, electrical, or communicative; it can mean direct or indirect through an intermediary. It should be noted that the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0022] The disclosure herein provides many different embodiments or examples for realizing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described herein. Of course, they are merely examples, and the purpose is not to limit the present application.

[0023] A high-voltage amplifier is an electronic device that can amplify an input signal to a very high voltage (such as several thousand volts or tens of kilovolts). It is widely used in fields that require high-voltage drive or high-precision signal processing, such as electron beam lithography machines, photolithography machines, electrostatic chucks, piezoelectric device drivers, radar equipment, testing materials for dielectric strength and insulation properties, quantum computing, etc. Currently, high-voltage amplifiers have disadvantages such as complex principles, large size, high power consumption, low efficiency, and difficulty in heat dissipation. In related technologies, for example, some high-voltage amplifier circuits use a control circuit to indirectly control the conduction state of the upper and lower bridge arms of the output circuit to generate a high-voltage signal. Usually, at least two stages (control stage and output stage) are required to achieve indirect control from the input stage to the output stage. It is understandable that both stages require at least one row of switching tubes connected in series, which is similar to a totem pole structure including two rows of upper and lower bridge arms. The number of switching tubes required is large and the structure is complex, which will also affect work efficiency. Therefore, how to provide a simpler and more efficient high-voltage amplifier is currently a problem that needs to be solved urgently. ‌‌ Based on this, the present application proposes a circuit for a high-voltage amplification system, which includes a control circuit, a first high-voltage isolation amplifier, a second high-voltage isolation amplifier, and a high-voltage output circuit; the control circuit is used to generate a drive signal after processing the input signal; the first high-voltage isolation amplifier is connected to the output end of the control circuit; the second high-voltage isolation amplifier is connected to the output end of the control circuit; the high-voltage output circuit includes an upper bridge arm module and a lower bridge arm module connected to each other, the input end of the upper bridge arm module is connected to the output end of the first high-voltage isolation amplifier, and the input end of the lower bridge arm module is connected to the output end of the second high-voltage isolation amplifier; the upper bridge arm module and the lower bridge arm module include multiple switching tubes connected in series, and the output end voltage of each switching tube meets the voltage equalization requirement. The circuit structure of the high-voltage amplification system of the embodiment of the present invention is simpler, smaller in size, and more efficient.

[0024] The embodiments of the present invention are further described below with reference to the accompanying drawings.

[0025] like Figure 1 As shown, Figure 1A schematic structural diagram of a circuit of a high-voltage amplification system provided in an embodiment of the present invention includes a control circuit, a first high-voltage isolation amplifier, a second high-voltage isolation amplifier, and a high-voltage output circuit. The high-voltage output circuit includes an upper bridge arm module and a lower bridge arm module that are interconnected. The first high-voltage isolation amplifier is respectively connected to the output end of the control circuit and the input end of the upper bridge arm module, and the second high-voltage isolation amplifier is respectively connected to the output end of the control circuit and the input end of the lower bridge arm module. The upper bridge arm module and the lower bridge arm module include multiple switching tubes connected in series, and the output voltage of each switching tube meets the voltage sharing requirement.

[0026] Specifically, the control circuit is used to generate a drive signal after processing the input signal. It can be understood that the control circuit can receive input signals from the outside and perform corresponding processing on the input signals, such as pre-processing the signals (such as amplification, filtering, etc.) and signal adjustment (such as adjusting parameters such as amplitude, frequency, and phase). The control circuit generates corresponding drive signals based on the processed signals and circuit design requirements to control the switching tubes in the high-voltage output circuit. These drive signals determine the on and off moments of the switching tubes, thereby controlling the working state of the high-voltage output circuit.

[0027] The first and second high-voltage isolation amplifiers in the embodiments of the present invention can achieve high-voltage isolated signal transmission. This high-voltage isolation prevents damage to the electronic components of the control section caused by high voltage, high current, and strong interference from the high-voltage section, thereby protecting the normal operation of the control circuit. It is understood that the aforementioned high-voltage isolation amplifiers can refer to amplifiers used to isolate very high voltages. The first and second high-voltage isolation amplifiers can be understood as analog signal isolation circuits for generating a suspended control voltage. A suspended voltage refers to a relatively independent potential state at a point or part in a circuit. The presence of the suspended voltage allows the potentials of the high-voltage and control sections to be independent of each other, preventing voltage interference caused by direct electrical connection or current surges and damage caused by potential differences. This also facilitates the flexible design and application of high-voltage amplification systems. In the embodiments of the present invention, by utilizing the first and second high-voltage isolation amplifiers to isolate the control circuit from the high-voltage output circuit, accurate control signal transmission is ensured, protecting the normal operation of the control circuit and enabling control of the main circuit components of the high-voltage amplification system (i.e., the upper and lower bridge arms of the high-voltage output circuit). Unlike traditional high-voltage amplifier circuits, where indirect control from the input stage to the output stage often requires multiple stages of circuitry for signal amplification, conversion, isolation, and other processing, increasing circuit complexity, the embodiments of the present invention utilize high-voltage isolation amplifiers to achieve direct isolation and signal transmission, eliminating intermediate links, simplifying the circuit structure, reducing circuit complexity, and improving signal transmission efficiency and quality. Furthermore, by reducing the number of complex circuits and components required for indirect control, the probability of circuit failures due to device failures, connection errors, and other factors is reduced, thereby improving the reliability of the entire circuit. It can be understood that the embodiments of the present invention only require a single row of series-connected switching transistors (i.e., the high-voltage output circuit) to achieve high-voltage output, significantly reducing the number of switching transistors, resulting in a simpler, more compact, and more efficient high-voltage amplifier system.

[0028] In some embodiments, the high-voltage isolation amplifier may use principles such as electromagnetic induction and photoelectric coupling to achieve isolated signal transmission.

[0029] The high-voltage output circuit includes an interconnected upper and lower bridge modules, each equipped with a series-connected switching transistor. The output voltage of each switching transistor meets the voltage-sharing requirement, and thus, the output voltage of each switching transistor is substantially equal. The switching transistors in the upper and lower bridge modules of the high-voltage output circuit are in a voltage-sharing state, ensuring that the voltage to which each switching transistor is subjected is within its safe operating range, avoiding failures caused by overvoltage in a single device, improving the reliability and stability of the circuit. This also allows the upper and lower bridge modules to withstand a higher total voltage, thereby enhancing the overall circuit's voltage resistance and adapting it to higher-voltage applications. Furthermore, since the switching transistors in the upper and lower bridge modules operate under similar operating conditions during the switching process, the switching speed and on-resistance of the switching transistors are more consistent, reducing switching asynchrony caused by voltage differences and improving the quality and stability of the output signal. The uniform voltage distribution ensures more balanced power consumption across each switching transistor, preventing local overheating, extending the device's service life, and improving the overall thermal efficiency and heat dissipation of the circuit, resulting in higher circuit efficiency, lower power consumption, and simpler heat dissipation. Moreover, because the operating voltages of the switching tubes are similar, the design and adjustment of the drive signal are easier, and there is no need for complex compensation and optimization of device characteristics under different voltages, which reduces the complexity and cost of circuit design.

[0030] In some embodiments, the switch tube may include a MOS tube or a bipolar transistor.

[0031] Based on the circuit of the high-voltage amplification system proposed in the above embodiment, a control circuit and a high-voltage output circuit are provided in the circuit, and a first high-voltage isolation amplifier and a second high-voltage isolation amplifier are provided between the control circuit and the high-voltage output circuit. This can achieve isolated signal transmission, simplify the circuit structure, and improve the efficiency and quality of signal transmission. Moreover, the output terminal voltage of each switching tube in the upper bridge arm module and the lower bridge arm module of the high-voltage output circuit meets the voltage equalization requirements, which can improve the reliability and stability of the circuit and improve the overall thermal efficiency and heat dissipation performance of the circuit. Therefore, the circuit structure of the high-voltage amplification system of the embodiment of the present invention is simpler, smaller in size, and more efficient.

[0032] It should be noted that, generally speaking, the potential of the control circuit is close to the ground, which is conducive to simplifying the design of the entire circuit and ensuring the safety of the operator. The embodiment of the present invention only needs to use a high-voltage isolation amplifier to isolate the high-voltage part and the control part without affecting the transmission of the control signal, so that the control of the high-voltage output circuit can be achieved.

[0033] like Figure 2 or Figure 3As shown, in the circuit of the above-mentioned high-voltage amplification system, the control circuit includes a comparator and a regulator, the input end of the comparator is used to receive an input signal, the output end of the comparator is connected to the input end of the regulator, and the output end of the regulator is respectively connected to the input end of the first high-voltage isolation amplifier and the input end of the second high-voltage isolation amplifier.

[0034] In this embodiment, the input end of the comparator can receive an input signal (for example, a voltage signal) and a feedback signal and compare the input signal with the feedback signal, that is, the feedback signal is subtracted from the input signal and the result is output to the input end of the regulator through the output end, and then output after processing by the regulator, thereby controlling the output of the first high-voltage isolation amplifier and the second high-voltage isolation amplifier, and then controlling the high-voltage output of the high-voltage output circuit, thereby achieving precise high-voltage control output.

[0035] In one embodiment, the input terminal of the comparator may input a voltage value, and the limited range of the voltage value is -10V to +10V.

[0036] like Figure 2 or Figure 3 As shown, in the circuit of the above-mentioned high-voltage amplification system, it also includes a first voltage-dividing resistor R11, a second voltage-dividing resistor R12 and an amplification circuit, the connection point of the first voltage-dividing resistor R11 and the second voltage-dividing resistor R12 is connected to the input end of the amplification circuit, and the output end of the amplification circuit is connected to the input end of the comparator.

[0037] In one embodiment, the amplifier circuit may be a filter amplifier circuit.

[0038] In this embodiment, a first voltage-dividing resistor R11 and a second voltage-dividing resistor R12 are provided at the output end of the high-voltage output circuit, and a high-voltage signal is collected by a high-voltage voltage divider composed of the first voltage-dividing resistor R11 and the second voltage-dividing resistor R12. The high-voltage signal is then processed by a filter amplifier circuit and input to a comparator as a feedback signal. If a voltage value is input to the comparator, the comparator simultaneously obtains a feedback value processed by the filter amplifier circuit. By comparing the given voltage value with the feedback value and then passing it through the output of the regulator, the output of the first high-voltage isolation amplifier and the second high-voltage isolation amplifier are controlled, and then the output of the high-voltage output circuit is controlled. The voltage output by the high-voltage output circuit is further measured to obtain a measured value, and the measured value is fed back to the comparator as a feedback signal. The entire loop constitutes a closed-loop control system.

[0039] In one embodiment, the input and output of the closed-loop control system share a common ground, and all ground terminals can be connected together as a common ground.

[0040] In one embodiment, the filtering amplifier circuit can also be an isolation amplifier. The isolation amplifier itself has a filtering function, and at the same time isolates the ground end of the high-voltage output circuit from the ground end of the control circuit, the ground end of the first high-voltage isolation amplifier, and the ground end of the second high-voltage isolation amplifier, respectively, so as to achieve both high-voltage amplification and high-voltage isolation.

[0041] In one embodiment, the regulator can be a PID (proportional-integral-derivative) regulator or any other type of regulator, whether analog or digital, or composed of a neural network algorithm, whose function is to ensure the stability of the closed-loop system and the response speed of the closed-loop system.

[0042] In one embodiment, if the circuit of the high-voltage amplification system is closed-loop controlled, the high-voltage output circuit is in a relatively stable output state, so that the feedback signal can more truly reflect the working state of the circuit, thereby achieving more precise control and regulation, and improving the control accuracy and dynamic performance of the entire circuit; the so-called relative stability refers to "stable" within a limited short time range, and can be dynamic beyond a specific time range.

[0043] like Figures 2 to 4 As shown, in the circuit of the above-mentioned high-voltage amplifier system, the upper bridge arm module includes n switching tubes connected in series, and a resistor is provided between the control terminals of each switching tube; the lower bridge arm module includes m switching tubes connected in series, and a resistor is provided between the control terminals of each switching tube; each of the resistors has the same resistance value; wherein n and m are both positive integers greater than 0. The number of n and m can be the same or different.

[0044] In this embodiment, by providing resistors between the control terminals of the respective switching tubes of the upper and lower bridge arm modules, and by providing the same resistance value for each corresponding resistor, it is possible to ensure that the voltages at the output terminals of the switching tubes are substantially equal, and are in a voltage-balanced state. Specifically, for the upper bridge arm module, a resistor is provided between the gate of the first switching tube and the gate of the second switching tube, a resistor is provided between the gate of the second switching tube and the gate of the third switching tube, and so on. A resistor is provided between the gate of the n-1th switching tube and the gate of the nth switching tube. In addition, a resistor is provided between the gate and drain of the first switching tube, and the resistance values ​​of the aforementioned resistors are all the same. The configuration of the resistors in the lower bridge arm module is consistent with that of the upper bridge arm module and will not be further described here.

[0045] In the circuit of the above-mentioned high-voltage amplification system, the switching tubes are MOS tubes, and the drain-source voltages of each of the MOS tubes are equal.

[0046] In this embodiment, if the switch tube is a MOS tube, the output terminal voltage of the switch tube is the drain-source voltage. The drain-source voltage of each MOS tube is equal, which can meet the voltage equalization requirement.

[0047] In some embodiments, taking the MOS transistor as an example, the following describes how to achieve equal drain-source voltages for each MOS transistor, that is, equal voltages between the D terminal (drain) and the S terminal (source). The upper arm module has n NMOS transistors and the lower arm module has m NMOS transistors. For the NMOS transistors in the upper arm module, from Q a1 to Q an The drain-to-source voltage V ds are equal, for the NMOS tube in the lower bridge arm module, Q b1 to Q bm The drain-to-source voltage V ds The following is a detailed introduction to the voltage balancing effect achieved by the upper bridge arm module.

[0048] Among them, a resistor is set between the gates of each NMOS tube in the upper bridge arm module. The first NMOS tube at the top of the upper bridge arm module (i.e. Q a1 ) is provided with a resistor R between the gate and drain a1 , the second NMOS tube (ie Q a2 ) and the third NMOS tube (i.e. Q a3 ) is provided with a resistor R between the gate a2 , and so on, Q an-1 and Q an The gate is provided with a resistor R an From the first NMOS tube at the top of the upper bridge arm module (i.e. Q a1 ) starts from the nth NMOS tube (i.e. Q an ) the static current flowing into the gate is zero, so each resistor R a1 、R a2 ,……R an The current flowing through is exactly the same. According to Ohm's law, V=IR, if the resistance value of each resistor is set to R a1 =R a2 =……=R an , then V Ra1 =V Ra2 =……=V Ran .in is the resistor R a1 The voltage across the two ends, and so on for other resistors. Specifically, , Q a1 V ds Value, that is, the drain-source voltage from drain to source. In addition, ,in, is the voltage from gate to source. The same type of MOS tubes are selected in the upper bridge arm modules, and their characteristics are basically the same. , and finally we can get , corresponding to,Q a1 to Q an The drain-source voltage is equal.

[0049] Similarly, based on the same principle as the upper bridge arm module, the Q of the lower bridge arm module b1 to Q bm The drain-source voltage is equal.

[0050] like Figures 1 to 4 As shown, in the circuit of the above-mentioned high-voltage amplification system, the conduction states of the upper bridge arm module and the lower bridge arm module are opposite; when the first high-voltage isolation amplifier is a non-inverting isolation amplifier, the second high-voltage isolation amplifier is an inverting isolation amplifier; or, when the first high-voltage isolation amplifier is an inverting isolation amplifier, the second high-voltage isolation amplifier is a non-inverting isolation amplifier.

[0051] In this embodiment, the output of the first high-voltage isolation amplifier controls the conduction state of all the switch tubes in the upper bridge arm module, and the output of the second high-voltage isolation amplifier controls the conduction state of all the switch tubes in the lower bridge arm module. The conduction states of the upper bridge arm module and the lower bridge arm module are opposite. Specifically, if the voltage at the output end of the regulator of the control circuit gradually increases, the conduction state of the switch tubes in the upper bridge arm module will uniformly and gradually increase, while the conduction state of the switch tubes in the lower bridge arm module will uniformly and gradually decrease until it is completely shut down. Conversely, if the voltage at the output end of the regulator gradually decreases, the conduction state of the switch tubes in the upper bridge arm module will uniformly and gradually decrease until it is completely shut down, while the conduction state of the switch tubes in the lower bridge arm module will uniformly and gradually increase.

[0052] In one embodiment, when the first high-voltage isolation amplifier is a non-inverting isolation amplifier and the second high-voltage isolation amplifier is an inverting isolation amplifier, the high-voltage amplification system can function as a non-inverting high-voltage amplifier; alternatively, when the first high-voltage isolation amplifier is an inverting isolation amplifier and the second high-voltage isolation amplifier is a non-inverting isolation amplifier, the high-voltage amplification system can function as an inverting high-voltage amplifier. By setting the first high-voltage isolation amplifier and the second high-voltage isolation amplifier to complementary phases, crossover distortion can be prevented and complementary operation of the upper and lower bridge arm modules can be ensured. The complementary phase outputs of the high-voltage isolation amplifiers can ensure that during signal amplification, the upper and lower bridge arm modules are turned on and off in a complementary manner, i.e., the upper and lower bridge arm modules have opposite conduction states, thereby avoiding signal distortion and improving the efficiency and performance of the circuit of the high-voltage amplification system.

[0053] like Figures 2 to 4As shown, in the circuit of the above-mentioned high-voltage amplification system, when the switching tube is a MOS tube, the output end of the first high-voltage isolation amplifier is connected to the MOS tube at the bottom end of the upper bridge arm module to control the conduction state of the upper bridge arm module; the output end of the second high-voltage isolation amplifier is connected to the MOS tube at the top end of the lower bridge arm module to control the conduction state of the lower bridge arm module.

[0054] In this embodiment, if the first high-voltage isolation amplifier is a non-inverting isolation amplifier and the second high-voltage isolation amplifier is an inverting isolation amplifier, the control circuit outputs two signals to the first high-voltage isolation amplifier and the second high-voltage isolation amplifier respectively. The output of the first high-voltage isolation amplifier directly controls the MOS transistor at the bottom of the upper bridge arm module (i.e., Q an ), by controlling the gate-to-source voltage V gs , thereby controlling the conduction state of the entire upper bridge arm module. In this state, Q an Working in the amplified state, when Exceeds the gate threshold voltage , Q an Start to conduct, as The increasing Q an On-resistance As the drain-source voltage decreases Gradually decreases, combined with the derivation of the voltage balancing effect in the above embodiment, the voltage from drain to source on all MOS tubes in the upper bridge arm module Similarly, the output of the second high-voltage isolation amplifier directly controls the MOS tube at the top of the lower bridge arm module (i.e. Q b1 ), thereby controlling the conduction state of the entire lower-arm module. This ensures that the lower-arm module begins to shut down just as the upper-arm module begins to conduct, otherwise crossover distortion will occur. Based on this setup, the high-voltage output circuit can be efficiently controlled.

[0055] Since when the n MOS tubes of the upper bridge arm module are turned on, the m MOS tubes of the lower bridge arm module are turned off at the same time, the n MOS tubes that are turned on are at different potentials. Assuming that the power supply voltage input to the circuit of the high-voltage amplifier system is between +HV and -HV, where +HV is the power supply voltage of the upper bridge arm module and -HV is the power supply voltage of the lower bridge arm module, assuming that the output voltage of the circuit of the high-voltage amplifier system is , then the total voltage borne by the n MOS tubes of the upper bridge arm module is +HV and The difference, that is (+HV)- , the voltage on each MOS tube is: , n is the number of MOS tubes in the upper bridge arm module, the top MOS tube And the MOS tube at the bottom The voltage difference is: .

[0056] When the output voltage When it is close to 0 (i.e. the middle value between +HV and -HV), the MOS tube at the top of the upper bridge arm module And the MOS tube at the bottom The voltage difference is close to +HV, and the MOS tube at the top of the upper bridge arm module The gate potential is close to +HV, and the MOS tube at the bottom of the upper bridge module The gate potential is close to 0. Similarly, the MOS tube at the top of the lower bridge module And the MOS tube at the bottom The voltage difference is close to -HV. Generally, (+HV) = -(-HV); assuming +HV = 10000V, -HV = -10000V, n = 10, and 10 NMOS tubes are connected in series, then (when the output voltage Close to 0) MOS tube Q at the bottom of the upper bridge arm module a10 The gate potential may be equal to 0~2V, which is less than the gate threshold voltage of the MOS tube. .

[0057] When the output voltage When approaching +HV, the MOS tube at the top of the upper bridge arm module And the MOS tube at the bottom The voltage difference is very small; the MOS tube at the top of the lower bridge arm module And the MOS tube at the bottom The voltage difference is close to 2 times of +HV, that is, (+HV)-(-HV)=2*(+HV). At this time, the n MOS tubes of the upper bridge arm module They are all close to saturation conduction, and the voltage from the drain to the source of each MOS tube is , n is the number of MOS tubes in the upper bridge arm module. At this time, the MOS tube at the bottom of the upper bridge arm module The gate potential must be close to +HV. At this time, the m MOS tubes of the lower bridge arm module are close to shutting down or have already shut down. At this time, the MOS tube at the top of the lower bridge arm module The gate is responsible for the conduction control of the entire lower bridge arm module. The potential must also be close to +HV. For example, +HV=10000V, -HV=-10000V, n=20, m=20, the upper and lower bridge arm modules each use 20 1200V withstand voltage NMOS tubes in series, and the MOS tube at the bottom of the upper bridge arm module The gate is used to control the conduction state of the entire upper bridge arm module. Its potential may reach about 9900V (this is just an assumption and can be other values, such as 7000V~9999.9V, etc.). At this time, the voltage from the drain to the source of each MOS tube in the upper bridge arm module is This is equal to (10000-9900) / 20=5V, which is close to the saturated conduction state. Similarly, the gate potential of the MOS tube at the top of the lower bridge module is approximately 9900-(10000+9900) / 20+5=8910V.

[0058] When the output voltage When approaching -HV, the MOS tube at the top of the upper bridge arm module And the MOS tube at the bottom The voltage difference is close to 2 times of +HV, that is, (+HV)-(-HV)=2*(+HV). At this time, the n MOS tubes of the upper bridge arm module They are basically close to the off state or in the off state, and the MOS tube at the top of the lower bridge arm module And the MOS tube at the bottom The gate potential is very close; at this time, the m MOS tubes of the lower bridge arm module They are all close to saturation conduction, and the voltage from the drain to the source of each MOS tube is , m is the number of MOS tubes in the lower bridge arm module, and the MOS tube at the bottom of the upper bridge arm module is The gate potential must be close to -HV. For example, +HV=10000V, -HV=-10000V, n=20, and the upper and lower bridge arm modules each use 20 NMOS tubes in series. The source voltage of the MOS tube at the bottom of the lower bridge arm module is -10000V. At the same time, the voltage drop of each MOS tube in the lower bridge arm module is 5V. Then the gate potential of the MOS tube Qa10 at the bottom of the upper bridge arm module may be equal to -9900V, and the gate voltage of the MOS tube at the bottom of the upper bridge arm module is -9895V.

[0059] It should be noted that the voltage values ​​in the above examples are merely assumptions made for ease of understanding and do not represent the only options. In actual applications, any reasonable design voltage may be used. Those skilled in the art can make similar designs and choices based on the above.

[0060] According to the above description, the output voltage can change from -HV to 0V and then close to +HV. As the control ends of the entire upper bridge arm module and the lower bridge arm module, the potential of the gate of the MOS tube at the lower end of the upper bridge arm module and the gate of the MOS tube at the upper end of the lower bridge arm module can float from a voltage close to +HV to -HV (of course, it can also float within a range smaller than +HV to -HV).

[0061] like Figures 2 to 4 As shown, in the circuit of the above-mentioned high-voltage amplification system, in a possible implementation manner, the switch tubes of the upper bridge arm module and the lower bridge arm module are both NMOS tubes.

[0062] In related technologies, most high-voltage amplifier systems rely on linear PNP bipolar transistors and PMOS transistors. However, high-voltage amplifiers are produced in small quantities, and the number of manufacturers producing high-voltage linear PNP bipolar transistors and PMOS transistors is decreasing, which has affected the production of high-voltage amplifiers.

[0063] In this embodiment, both the upper bridge arm module and the lower bridge arm module use exactly the same NMOS tube, which can greatly reduce the complexity of the high-voltage amplification system, making its principle simpler, more efficient, and more convenient for production and debugging. It no longer relies on linear PNP bipolar transistors or linear PMOS tubes, solving the problem of the current lack of high-voltage linear PMOS tubes in the market.

[0064] The solution of this embodiment is more suitable for high-voltage amplification systems with higher voltages, and is applicable to applications with arbitrary waveforms operating in four quadrants (meaning that the output voltage and current can change from negative polarity to positive polarity, thereby forming four different operating states).

[0065] like Figure 3 and Figure 4 As shown, in the circuit of the above-mentioned high-voltage amplification system, the switching tube is a MOS tube, and a voltage regulator tube is arranged between the gate and source of each MOS tube.

[0066] In this embodiment, a voltage regulator diode can be connected between the gate and source of each MOS transistor to protect the MOS transistor from breakdown by abnormally high voltage. In addition, when the output voltage of the high-voltage isolation amplifier "tries" to fall below the forward conduction voltage drop of the voltage regulator diode (generally about 0.7V), the voltage regulator diode is clamped to the negative forward conduction voltage drop of the voltage regulator diode (generally about -0.7V). This increases the switching speed of the MOS transistor from off to on, thereby increasing the bandwidth of the high-voltage amplification system and reducing crossover distortion.

[0067] Different from Figure 2 、 Figure 4 The embodiment shown, Figure 4 This is another embodiment that eliminates the closed-loop feedback circuit. This embodiment allows the amplification factor of the high-voltage amplification system to be adjusted by adjusting the amplification factor of the high-voltage isolation amplifier. Crossover distortion can also be overcome by adjusting the amplification factors of the high-voltage isolation amplifiers separately. This embodiment achieves complete electrical isolation between the control circuit and the high-voltage output circuit, eliminating charge exchange.

[0068] Those skilled in the art can also Figure 4 Make adaptive adjustments based on the above, such as adding a high voltage divider (such as Figure 2 and Figure 3 The output voltage can be detected by using R11 and R12 in the circuit, or some circuits for overcoming crossover distortion can be added on this basis to overcome possible crossover distortion. The embodiment of the present invention is not specifically limited.

[0069] In the circuit of the above-mentioned high-voltage amplifier system, except for the above-mentioned embodiment in which the switch tubes of the upper bridge arm module and the lower bridge arm module are both NMOS tubes, in one possible implementation, the switch tubes of the upper bridge arm module and the lower bridge arm module are both PMOS tubes. Alternatively, the switch tube of the upper bridge arm module is an NMOS tube, and the switch tube of the lower bridge arm module is a PMOS tube. Alternatively, the switch tube of the upper bridge arm module is a PMOS tube, and the switch tube of the lower bridge arm module is an NMOS tube.

[0070] It is understandable that those skilled in the art can select different types of switch tubes according to actual application requirements based on the circuit configuration of the above embodiment, and the embodiment of the present invention does not impose any specific limitation.

[0071] In some embodiments, resistors R1 and R2 are further provided in the circuit of the high-voltage amplifier system to ensure normal operation of the circuit. Resistor R13 is used to represent the actual load. In practice, the load can be in various forms, including resistive, inductive, capacitive, or any combination of inductive, capacitive, and resistive, or a physical device such as a plate or other type of electrode.

[0072] It should be noted that Figures 1 to 4 The structure shown is only an example, and the components therein do not constitute a limitation on the embodiments of the present invention. In addition, in order to ensure the normal operation of the circuit, other structures not shown in the figure may also be included. Those skilled in the art can design according to actual application conditions, and the embodiments of the present invention do not impose specific limitations.

[0073] In a second aspect, an embodiment of the present invention provides a high-voltage amplification system, comprising the circuit as described in the embodiment of the first aspect above.

[0074] The high-voltage amplification system provided by an embodiment of the present invention includes the circuit of the above-described embodiment, wherein a control circuit and a high-voltage output circuit are provided in the circuit, and a first high-voltage isolation amplifier and a second high-voltage isolation amplifier are provided between the control circuit and the high-voltage output circuit. This enables isolated signal transmission, simplifies the circuit structure, and improves the efficiency and quality of signal transmission. Furthermore, the output terminal voltage of each switching tube in the upper bridge arm module and the lower bridge arm module of the high-voltage output circuit meets the voltage-sharing requirements, thereby improving the reliability and stability of the circuit and the overall thermal efficiency and heat dissipation performance of the circuit. Therefore, the high-voltage amplification system of the embodiment of the present invention has a simpler circuit structure, a smaller size, and a higher efficiency.

[0075] It should be noted that, in order to ensure the normal operation of the high-voltage amplification system, other structures may be provided, and the embodiment of the present invention does not impose any specific limitation thereto.

[0076] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that specific features, structures, materials, or characteristics described in conjunction with an embodiment or example are included in at least one embodiment or example of the present application. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0077] The embodiments of the present invention are described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Various changes can be made within the scope of knowledge possessed by ordinary technicians in the technical field without departing from the spirit of the present invention.

Claims

1. A circuit of a high-voltage amplification system, characterized in that: The circuit comprises: A control circuit, configured to generate a drive signal after processing an input signal; a first high-voltage isolation amplifier connected to an output end of the control circuit; a second high-voltage isolation amplifier connected to an output terminal of the control circuit; A high-voltage output circuit, comprising an upper bridge arm module and a lower bridge arm module connected to each other, wherein the input end of the upper bridge arm module is connected to the output end of the first high-voltage isolation amplifier, and the input end of the lower bridge arm module is connected to the output end of the second high-voltage isolation amplifier; The upper bridge arm module and the lower bridge arm module include a plurality of switch tubes connected in series, and the output terminal voltage of each switch tube meets the voltage equalization requirement.

2. The circuit according to claim 1, wherein: The control circuit includes a comparator, a regulator, a first voltage-dividing resistor, a second voltage-dividing resistor and an amplifier circuit. The input end of the comparator is used to receive an input signal and a feedback signal and compare the input signal and the feedback signal. The output end of the comparator is connected to the input end of the regulator. The output end of the regulator is respectively connected to the input end of the first high-voltage isolation amplifier and the input end of the second high-voltage isolation amplifier. The connection point of the first voltage-dividing resistor and the second voltage-dividing resistor is connected to the input end of the amplifier circuit.

3. The circuit according to claim 2, characterized in that The amplifier circuit is a filter amplifier circuit.

4. The circuit according to claim 1, wherein: The upper bridge arm module includes n switching tubes connected in series, and a resistor is provided between the control ends of each switching tube; the lower bridge arm module includes m switching tubes connected in series, and a resistor is provided between the control ends of each switching tube; the resistance value of each resistor is the same; wherein n and m are both positive integers greater than 0.

5. The circuit according to claim 1, wherein: The switch tubes are MOS tubes, and the drain-source voltages of each MOS tube are equal.

6. The circuit according to claim 1, wherein: The conduction states of the upper bridge arm module and the lower bridge arm module are opposite; when the first high-voltage isolation amplifier is a non-inverting isolation amplifier, the second high-voltage isolation amplifier is an inverting isolation amplifier; or, when the first high-voltage isolation amplifier is an inverting isolation amplifier, the second high-voltage isolation amplifier is a non-inverting isolation amplifier.

7. The circuit according to claim 1, wherein: When the switching tube is a MOS tube, the output end of the first high-voltage isolation amplifier is connected to the MOS tube at the bottom end of the upper bridge arm module to control the conduction state of the upper bridge arm module; the output end of the second high-voltage isolation amplifier is connected to the MOS tube at the top end of the lower bridge arm module to control the conduction state of the lower bridge arm module.

8. The circuit according to claim 1, wherein: The switch tube is a MOS tube, and a voltage regulator tube is arranged between the gate and source of each MOS tube.

9. The circuit according to claim 1, wherein: The switch tubes of the upper bridge arm module and the lower bridge arm module include at least one of the following situations: The switch tubes of the upper bridge arm module and the lower bridge arm module are both NMOS tubes; Alternatively, the switch tubes of the upper bridge arm module and the lower bridge arm module are both PMOS tubes; Alternatively, the switch tube of the upper bridge arm module is an NMOS tube, and the switch tube of the lower bridge arm module is a PMOS tube; Alternatively, the switch tube of the upper bridge arm module is a PMOS tube, and the switch tube of the lower bridge arm module is an NMOS tube.

10. A high voltage amplification system, characterized in that: Comprising a circuit as claimed in any one of claims 1 to 9.

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