Large-current silicon carbide power module

Abstract

The invention discloses a large-current silicon carbide power module, which comprises a substrate, a current measurement PCB insulating plate, a current measurement PCB copper-clad plate, module subunit power source copper clad, module subunit drain copper clad, module subunit grid first copper clad and four subunits with identical structures. The current measurement PCB insulation board and the current measurement PCB copper-clad plate which can measure current are integrated, the current of the module can be accurately measured, and the technical problems that an existing large-current silicon carbide power module does not have a current measurement function, the current of the silicon carbide power module is difficult to accurately measure, and the overall reliability of the silicon carbide power module is affected are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide power modules, and in particular to a high-current silicon carbide power module. Background Art

[0002] Among silicon carbide devices, silicon carbide MOSFETs have the advantages of low on-resistance, fast switching speed, and high temperature tolerance, and have gradually replaced silicon-based MOSFET and IGBT devices. Due to the need to improve the yield rate of chips, the active area of ​​silicon carbide chips is smaller, resulting in a smaller current level for a single chip. In high-current applications, multiple chips are generally packaged in parallel to form a high-efficiency module. Currently, the packaging of silicon carbide power modules still uses the packaging of traditional silicon-based power modules. The number of chips integrated in a 1.2kV power module is relatively small, and the current level that the power module can achieve is below 1000A.

[0003] There is currently no commercial 1.2kV / 1000A full silicon carbide module. In order to achieve current levels of 1000A and above, multiple commercial 1.2kV silicon carbide chips with a current level of 80A need to be connected in parallel. When multiple chips are connected in parallel, they are affected by device parameters and packaging parameters, and there is an imbalance in current distribution between the parallel chips, which causes uneven temperature distribution of the parallel chips. In severe cases, chips with excessive current distribution will experience thermal runaway, which seriously threatens the overall reliability of the power module. Therefore, after the silicon carbide power module is packaged, it is necessary to monitor the current of the silicon carbide power module to ensure the overall reliability of the silicon carbide power module. However, existing silicon carbide power modules do not have a current measurement function and cannot meet the current measurement requirements after the silicon carbide power module is packaged. Summary of the Invention

[0004] The present invention provides a high-current silicon carbide power module, which is used to solve the technical problem that the existing high-current silicon carbide power module does not have a current measurement function, is difficult to accurately measure the current of the silicon carbide power module, and affects the overall reliability of the silicon carbide power module.

[0005] In view of this, the present invention provides a high-current silicon carbide power module, comprising a substrate, a current measurement PCB insulating board, a current measurement PCB copper-clad board, a module subunit power source copper-clad board, a module subunit drain copper-clad board, a module subunit gate first copper-clad board, and four subunits with identical structures, wherein the four subunits with identical structures include a first DBC module subunit, a second DBC module subunit, a third DBC module subunit, and a fourth DBC module subunit;

[0006] Four subunits with identical structures are mounted on the substrate through the module subunit DBC insulation layer;

[0007] Each sub-unit consists of 6 silicon carbide MOSFET chips connected in parallel;

[0008] The module subunit power source copper clad, the module subunit drain copper clad, the module subunit gate first copper clad and the module subunit Kelvin source copper clad are respectively installed on the upper surface of the module subunit DBC insulation layer, the current measurement PCB insulation board is installed on the module subunit power source copper clad, the current measurement PCB copper clad board and the module subunit power source copper clad are sintered together by solder, the drain of the silicon carbide MOSFET chip is sintered together with the module subunit drain copper clad by solder, the power source of the silicon carbide MOSFET chip is connected to the current measurement PCB copper clad board through the module subunit power source bonding wire, the Kelvin source of the silicon carbide MOSFET chip is connected to the module subunit Kelvin source copper clad through the module subunit Kelvin source bonding wire, and the gate of the silicon carbide MOSFET chip is connected to the module subunit gate first copper clad through the module subunit gate bonding wire.

[0009] Optionally, the substrate is a heat dissipation substrate.

[0010] Optionally, the heat dissipation substrate is a ceramic substrate.

[0011] Optionally, the heat dissipation substrate is an aluminum nitride substrate.

[0012] Optionally, further comprising a module subunit gate terminal, a module subunit Kelvin source terminal, a module subunit drain power terminal, and a module subunit source power terminal;

[0013] The module subunit gate terminal is connected to the gate of the silicon carbide MOSFET chip, the module subunit Kelvin source terminal is connected to the Kelvin source of the silicon carbide MOSFET chip, the module subunit drain power terminal is connected to the drain of the silicon carbide MOSFET chip, and the module subunit source power terminal is connected to the power source of the silicon carbide MOSFET chip.

[0014] Optionally, it also includes a copper clad layer on the lower surface of the module subunit DBC, a module subunit gate resistor, a second copper clad layer on the module subunit gate, a first copper clad layer on the lower surface of the module DBC, a second copper clad layer on the lower surface of the module DBC, a third copper clad layer on the lower surface of the module DBC, a first copper clad layer on the module gate, a first copper clad layer on the module Kelvin source, a first DBC insulating layer on the module, a second copper clad layer on the module gate, a second DBC insulating layer on the module, a second copper clad layer on the module Kelvin source, a third copper clad layer on the module gate, a third DBC insulating layer on the module, and a third copper clad layer on the module Kelvin source;

[0015] The first DBC insulating layer of the module, the second DBC insulating layer of the module and the third DBC insulating layer of the module are mounted on the upper surface of the substrate;

[0016] The first copper clad of the module gate and the first copper clad of the module Kelvin source are installed on the upper surface of the first DBC insulating layer of the module, the second copper clad of the module gate and the second copper clad of the module Kelvin source are installed on the upper surface of the second DBC insulating layer of the module, and the third copper clad of the module gate and the third copper clad of the module Kelvin source are installed on the upper surface of the third DBC insulating layer of the module;

[0017] The first copper clad of the module subunit gate is connected to the module subunit gate resistor, the module subunit gate resistor is connected to the second copper clad of the module subunit gate, the module subunit gate terminal is sintered on the first copper clad of the module subunit gate through solder, the module subunit Kelvin source terminal is sintered on the first copper clad of the module Kelvin source through solder, the second copper clad of the module subunit gate is connected to the first external bonding wire of the module gate, the first external bonding wire of the module gate is connected to the first copper clad of the module subunit gate, the first copper clad of the module subunit gate is connected to the second external bonding wire of the module gate, the second external bonding wire of the module gate is connected to the second copper clad of the module subunit gate, and the second external bonding wire of the module gate is connected to the second copper clad of the module subunit gate. The bonding wire is connected to the third copper clad of the module sub-unit gate, the third copper clad of the module sub-unit gate is connected to the second copper clad of the module sub-unit gate, the module sub-unit Kelvin source copper clad is connected to the first external bonding wire of the module Kelvin source, the first external bonding wire of the module Kelvin source is connected to the first copper clad of the module Kelvin source, the first copper clad of the module Kelvin source is connected to the second external bonding wire of the module Kelvin source, the second external bonding wire of the module Kelvin source is connected to the second copper clad of the module Kelvin source, the second external bonding wire of the module Kelvin source is connected to the third copper clad of the module Kelvin source, and the third copper clad of the module Kelvin source is connected to the second copper clad of the module sub-unit Kelvin source.

[0018] Optionally, the gate of the silicon carbide MOSFET chip is connected to the gate terminal through a gate bonding wire and a first external bonding wire of the module gate, and the Kelvin source of the silicon carbide MOSFET chip is connected to the Kelvin source terminal through a Kelvin source bonding wire and a first external bonding wire of the module Kelvin source.

[0019] Optionally, the first DBC insulation layer of the module is a ceramic layer.

[0020] Optionally, the second DBC insulation layer of the module is a ceramic layer.

[0021] Optionally, the third DBC insulation layer of the module is a ceramic layer.

[0022] From the above technical solutions, it can be seen that the high current silicon carbide power module provided by the present invention has the following advantages:

[0023] The high-current silicon carbide power module provided by the present invention integrates a current measurement PCB insulation board and a current measurement PCB copper-clad board capable of measuring current, and can accurately measure the current of the module. This solves the technical problem that existing high-current silicon carbide power modules do not have a current measurement function, making it difficult to accurately measure the current of the silicon carbide power module, thereby affecting the overall reliability of the silicon carbide power module.

[0024] At the same time, the high-current silicon carbide power module provided by the present invention consists of four sub-units with exactly the same structure. Each sub-unit is composed of six silicon carbide MOSFET chips in parallel, which can reach a current level of more than 1.2kV / 1000A, solving the technical problem that the existing silicon carbide power modules lack 1.2kV / 1000A full silicon carbide power modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 This is a packaging structure diagram of a high-current silicon carbide power module provided in an embodiment of the present invention;

[0027] Figure 2 A side view of a module subunit provided in an embodiment of the present invention;

[0028] Figure 3 A top view of a module subunit provided in an embodiment of the present invention;

[0029] Figure 4 A side view of a high-current silicon carbide power module provided in an embodiment of the present invention;

[0030] Figure 5 A top view of a high-current silicon carbide power module provided in an embodiment of the present invention;

[0031] Figure 6 This is a circuit topology diagram of a high-current silicon carbide power module provided in an embodiment of the present invention;

[0032] Wherein, the accompanying drawings are marked as follows:

[0033] 1. First DBC module subunit; 2. Second DBC module subunit; 3. Third DBC module subunit; 4. Fourth DBC module subunit; 5. Substrate; 6. Module subunit gate terminal; 7. Module subunit Kelvin source terminal; 8. Current measurement PCB insulation board; 9. Module subunit drain power terminal; 10. Module subunit source power terminal; 11. Module subunit DBC bottom surface copper clad; 12. Module subunit DBC insulation layer; 13. Module subunit power source copper clad; 14. Module subunit drain copper clad; 15. Module subunit gate resistor; 16. Module subunit Kelvin source copper clad; 17. Module subunit gate first copper clad; 18. Current measurement PCB copper clad board; 19. Silicon carbide MOSFET chip; 20. Module subunit gate bonding wire; 2 1. Kelvin source bonding wire; 22. Power source bonding wire; 23. Second copper clad of module sub-unit gate; 24. First copper clad of module DBC lower surface; 25. Second copper clad of module DBC lower surface; 26. Third copper clad of module DBC lower surface; 27. First copper clad of module gate; 28. First copper clad of module Kelvin source; 29. ​​First DBC insulation layer of module; 30. Second copper clad of module gate; 31. Second DBC insulation layer of module; 32. Second copper clad of module Kelvin source; 33. Third copper clad of module gate; 34. Third DBC insulation layer of module; 35. Third copper clad of module Kelvin source; 36. First external bonding wire of module gate; 37. First external bonding wire of module Kelvin source; 38. Second external bonding wire of module Kelvin source; 39. Second external bonding wire of module gate. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0035] For easier understanding, see Figures 1 to 6 The present invention provides an embodiment of a high-current silicon carbide power module, comprising a substrate 5, a current measurement PCB insulating plate 8, a current measurement PCB copper-clad plate 18, a module subunit power source copper-clad plate 13, a module subunit drain copper-clad plate 14, a module subunit gate first copper-clad plate 17, and four subunits with identical structures. The four subunits with identical structures include a first DBC module subunit 1, a second DBC module subunit 2, a third DBC module subunit 3, and a fourth DBC module subunit 4.

[0036] Four subunits with identical structures are mounted on the substrate 5 through the module subunit DBC insulation layer 12;

[0037] Each sub-unit consists of 6 silicon carbide MOSFET chips 19 connected in parallel;

[0038] The module subunit power source copper clad 13, the module subunit drain copper clad 14, the module subunit gate first copper clad 17 and the module subunit Kelvin source copper clad 16 are respectively installed on the upper surface of the module subunit DBC insulation layer 12, the current measurement PCB insulation board 8 is installed on the module subunit power source copper clad 13, the current measurement PCB copper clad board 18 and the module subunit power source copper clad 13 are sintered together by solder, the drain of the silicon carbide MOSFET chip 19 is sintered together with the module subunit drain copper clad 14 by solder, the power source of the silicon carbide MOSFET chip 19 is connected to the current measurement PCB copper clad board 18 through the module subunit power source bonding wire 22, the Kelvin source of the silicon carbide MOSFET chip 19 is connected to the module subunit Kelvin source copper clad 16 through the module subunit Kelvin source bonding wire 21, and the gate of the silicon carbide MOSFET chip 19 is connected to the module subunit gate first copper clad 17 through the module subunit gate bonding wire 20.

[0039] It should be noted that in the embodiment of the present invention, the current measurement PCB insulating plate 8 is used for electrical insulation and mechanical protection. The current measurement PCB insulating plate 8 extends outward from the power module, and its end is designed with through-holes corresponding to three SMA plugs. In actual use, the SMA plugs are soldered to the current measurement PCB insulating plate 8, and the other end of the SMA plug is connected to a cable that can be connected to an instrument such as an oscilloscope. When the power module is operating, the current measurement function is realized. The current measurement PCB copper clad plate 18 is used to reduce the capacitance and resistance effects between the top and bottom layers, increasing current capacity. By connecting the power source bonding wires 22 extending from the silicon carbide MOSFET chip 19, the current of the silicon carbide MOSFET chip 19 can be drawn to the through-holes corresponding to the SMA plugs at the end of the current measurement PCB insulating plate 8, and then the current can be measured using a current measuring instrument, realizing the current measurement function.

[0040] The high-current silicon carbide power module provided by the present invention integrates a current measurement PCB insulating plate 8 and a current measurement PCB copper-clad plate 18 capable of measuring current, and can accurately measure the current of the module. This solves the technical problem that existing high-current silicon carbide power modules do not have a current measurement function, making it difficult to accurately measure the current of the silicon carbide power module, thereby affecting the overall reliability of the silicon carbide power module.

[0041] The high-current silicon carbide power module uses a commercial silicon carbide chip with a current rating of 1.2kV and 80A. It consists of four sub-units with exactly the same structure. Each sub-unit consists of six silicon carbide MOSFET chips 19 in parallel, for a total of 24 chips. The total current rating is the total number of chips multiplied by the current rating of a single chip, which can reach a current rating of more than 1.2kV / 1000A, solving the technical problem that existing silicon carbide power modules lack 1.2kV / 1000A full silicon carbide power modules.

[0042] In one embodiment, the high-current silicon carbide power module provided by the present invention also includes a gate terminal 6, a Kelvin source terminal 7, a drain power terminal 9, a source power terminal 10, a module subunit DBC lower surface copper clad 11, a module subunit gate resistor 15, a module subunit gate second copper clad 23, a module DBC lower surface first copper clad 24, a module DBC lower surface second copper clad 25, a module DBC lower surface third copper clad 26, a module gate first copper clad 27, a module Kelvin source first copper clad 28, a module first DBC insulating layer 29, a module gate second copper clad 30, a module second DBC insulating layer 31, a module Kelvin source second copper clad 32, a module gate third copper clad 33, a module third DBC insulating layer 34 and a module Kelvin source third copper clad 35.

[0043] In the four sub-units with exactly the same structure, each silicon carbide MOSFET chip 19 is correspondingly provided with a gate terminal 6, a Kelvin source terminal 7, a drain power terminal 9, a source power terminal 10, a module sub-unit DBC lower surface copper clad 11, a module sub-unit gate resistor 15, a module sub-unit gate second copper clad 23, a module DBC lower surface first copper clad 24, a module DBC lower surface second copper clad 25, a module DBC lower surface third copper clad 26, a module gate first copper clad 27 and a module Kelvin source first copper clad 28 in each sub-unit.

[0044] The first module DBC insulating layer 29 , the second module DBC insulating layer 31 and the third module DBC insulating layer 34 are mounted on the upper surface of the substrate 5 .

[0045] The module gate first copper clad 27 and the module Kelvin source first copper clad 28 are mounted on the upper surface of the module first DBC insulation layer 29. The module gate second copper clad 30 and the module Kelvin source second copper clad 32 are mounted on the upper surface of the module second DBC insulation layer 31. The module gate third copper clad 33 and the module Kelvin source third copper clad 35 are mounted on the upper surface of the module third DBC insulation layer 34. The module first DBC insulation layer 29, the module second DBC insulation layer 31, and the module third DBC insulation layer 34 are all ceramic layers.

[0046] The first copper clad 17 of the module subunit gate is connected to the module subunit gate resistor 15, and the module subunit gate resistor 15 is connected to the second copper clad 23 of the module subunit gate. The gate of the silicon carbide MOSFET chip 19 is connected to the module subunit gate terminal 6, and the module subunit gate terminal 6 is sintered on the first copper clad 17 of the module subunit gate through solder. The Kelvin source of the silicon carbide MOSFET chip 19 is connected to the module subunit Kelvin source terminal 7, and the module subunit Kelvin source terminal 7 is sintered on the module Kelvin source first copper clad 28 through solder. The second copper clad 23 of the module subunit gate is connected to the first external bonding wire 36 of the module gate, and the first external bonding wire 36 of the module gate is connected to the first copper clad 17 of the module subunit gate. The first copper clad 17 of the module subunit gate is connected to the second external bonding wire 39 of the module gate. The second external bonding wire 39 of the gate is connected to the second copper clad 23 of the module sub-unit gate, the second external bonding wire 39 of the module gate is connected to the third copper clad of the module sub-unit gate, the third copper clad of the module sub-unit gate is connected to the second copper clad 23 of the module sub-unit gate, the module sub-unit Kelvin source copper clad 16 is connected to the first external bonding wire 37 of the module Kelvin source, the first external bonding wire 37 of the module Kelvin source is connected to the first copper clad 28 of the module Kelvin source, the first copper clad 28 of the module Kelvin source is connected to the second external bonding wire 38 of the module Kelvin source, the second external bonding wire 38 of the module Kelvin source is connected to the second copper clad 32 of the module Kelvin source, the second external bonding wire 38 of the module Kelvin source is connected to the third copper clad 35 of the module Kelvin source, and the third copper clad 35 of the module Kelvin source is connected to the second copper clad of the module sub-unit Kelvin source.

[0047] The drain power terminal 9 is connected to the drain of the silicon carbide MOSFET chip 19, the gate of the silicon carbide MOSFET chip 19 is connected to the gate terminal 6 through the module sub-unit gate bonding wire 20 and the module gate first external bonding wire 36, the Kelvin source of the silicon carbide MOSFET chip 19 is connected to the Kelvin source terminal 7 through the Kelvin source bonding wire 21 and the module Kelvin source first external bonding wire 37, and the power source of the silicon carbide MOSFET chip 19 is connected to the source power terminal 10 through the power source bonding wire 22.

[0048] In one embodiment, the substrate 5 is a heat dissipation substrate, preferably a ceramic substrate, in particular an aluminum nitride substrate. The heat dissipation material can be adaptively selected according to the actual application scenario.

[0049] The terms "first," "second," "third," and the like in the present invention are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present invention described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0050] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some of the technical features thereof can be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high current silicon carbide power module, characterized in that: It includes a substrate, a current measurement PCB insulating board, a current measurement PCB copper-clad board, a module subunit power source copper-clad board, a module subunit drain copper-clad board, a module subunit gate first copper-clad board, and four subunits with identical structures. The four subunits with identical structures include a first DBC module subunit, a second DBC module subunit, a third DBC module subunit, and a fourth DBC module subunit. Four subunits with identical structures are mounted on the substrate through the module subunit DBC insulation layer; Each sub-unit consists of 6 silicon carbide MOSFET chips connected in parallel; The module subunit power source copper clad, the module subunit drain copper clad, the module subunit gate first copper clad and the module subunit Kelvin source copper clad are respectively installed on the upper surface of the module subunit DBC insulation layer, the current measurement PCB insulation board is installed on the module subunit power source copper clad, the current measurement PCB copper clad board and the module subunit power source copper clad are sintered together by solder, the drain of the silicon carbide MOSFET chip is sintered together with the module subunit drain copper clad by solder, the power source of the silicon carbide MOSFET chip is connected to the current measurement PCB copper clad board through the module subunit power source bonding wire, the Kelvin source of the silicon carbide MOSFET chip is connected to the module subunit Kelvin source copper clad through the module subunit Kelvin source bonding wire, and the gate of the silicon carbide MOSFET chip is connected to the module subunit gate first copper clad through the module subunit gate bonding wire.

2. The high current silicon carbide power module according to claim 1, characterized in that: The substrate is a heat dissipation substrate.

3. The high current silicon carbide power module according to claim 2, characterized in that: The heat dissipation substrate is a ceramic substrate.

4. The high current silicon carbide power module according to claim 3, characterized in that: The heat dissipation substrate is an aluminum nitride substrate.

5. The high current silicon carbide power module according to claim 1, characterized in that: Also included are a module subunit gate terminal, a module subunit Kelvin source terminal, a module subunit drain power terminal, and a module subunit source power terminal; The module subunit gate terminal is connected to the gate of the silicon carbide MOSFET chip, the module subunit Kelvin source terminal is connected to the Kelvin source of the silicon carbide MOSFET chip, the module subunit drain power terminal is connected to the drain of the silicon carbide MOSFET chip, and the module subunit source power terminal is connected to the power source of the silicon carbide MOSFET chip.

6. The high current silicon carbide power module according to claim 5, characterized in that: It also includes a copper clad lower surface of the module subunit DBC, a module subunit gate resistor, a second copper clad gate of the module subunit, a first copper clad lower surface of the module DBC, a second copper clad lower surface of the module DBC, a third copper clad lower surface of the module DBC, a first copper clad gate of the module, a first copper clad Kelvin source of the module, a first DBC insulating layer of the module, a second copper clad gate of the module, a second DBC insulating layer of the module, a second copper clad Kelvin source of the module, a third copper clad gate of the module, a third DBC insulating layer of the module, and a third copper clad Kelvin source of the module; The first DBC insulating layer of the module, the second DBC insulating layer of the module and the third DBC insulating layer of the module are mounted on the upper surface of the substrate; The first copper clad of the module gate and the first copper clad of the module Kelvin source are installed on the upper surface of the first DBC insulating layer of the module, the second copper clad of the module gate and the second copper clad of the module Kelvin source are installed on the upper surface of the second DBC insulating layer of the module, and the third copper clad of the module gate and the third copper clad of the module Kelvin source are installed on the upper surface of the third DBC insulating layer of the module; The first copper clad of the module subunit gate is connected to the module subunit gate resistor, the module subunit gate resistor is connected to the second copper clad of the module subunit gate, the module subunit gate terminal is sintered on the first copper clad of the module subunit gate through solder, the module subunit Kelvin source terminal is sintered on the first copper clad of the module Kelvin source through solder, the second copper clad of the module subunit gate is connected to the first external bonding wire of the module gate, the first external bonding wire of the module gate is connected to the first copper clad of the module subunit gate, the first copper clad of the module subunit gate is connected to the second external bonding wire of the module gate, the second external bonding wire of the module gate is connected to the second copper clad of the module subunit gate, and the second external bonding wire of the module gate is connected to the second copper clad of the module subunit gate. The bonding wire is connected to the third copper clad of the module sub-unit gate, the third copper clad of the module sub-unit gate is connected to the second copper clad of the module sub-unit gate, the module sub-unit Kelvin source copper clad is connected to the first external bonding wire of the module Kelvin source, the first external bonding wire of the module Kelvin source is connected to the first copper clad of the module Kelvin source, the first copper clad of the module Kelvin source is connected to the second external bonding wire of the module Kelvin source, the second external bonding wire of the module Kelvin source is connected to the second copper clad of the module Kelvin source, the second external bonding wire of the module Kelvin source is connected to the third copper clad of the module Kelvin source, and the third copper clad of the module Kelvin source is connected to the second copper clad of the module sub-unit Kelvin source.

7. The high current silicon carbide power module according to claim 6, characterized in that: The gate of the silicon carbide MOSFET chip is connected to the gate terminal through the gate bonding wire and the first external bonding wire of the module gate, and the Kelvin source of the silicon carbide MOSFET chip is connected to the Kelvin source terminal through the Kelvin source bonding wire and the first external bonding wire of the module Kelvin source.

8. The high current silicon carbide power module according to claim 4, characterized in that: The first DBC insulation layer of the module is a ceramic layer.

9. The high current silicon carbide power module according to claim 4, characterized in that: The second DBC insulation layer of the module is a ceramic layer.

10. The high current silicon carbide power module according to claim 4, characterized in that: The third DBC insulation layer of the module is a ceramic layer.

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