Inspection system and temperature control method

Abstract

The invention provides an inspection system and a temperature control method for inspecting a substrate while properly performing temperature control. The inspection system inspects a substrate while controlling the temperature, and comprises: a substrate holding unit for holding the substrate; a detection unit for supplying inspection electric power to the electrode unit of the substrate; a holding part temperature adjusting mechanism for detecting the temperature of the substrate holding part and adjusting the temperature of the substrate holding part; a detection unit temperature adjustment mechanism that detects the temperature of the detection unit and adjusts the temperature of the detection unit; and a control unit that inspects the substrate while adjusting the temperature control performed by the holding unit temperature adjustment mechanism and the detection unit temperature adjustment mechanism.

Description

Technical Field

[0001] The present invention relates to an inspection system and a temperature control method. Background Art

[0002] Patent Document 1 discloses an electric power conversion device capable of detecting the voltage between the source and drain terminals of a power transistor during its on-period and estimating the junction temperature of the power transistor with high accuracy.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-122107 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] One aspect of the present invention provides an inspection system and a temperature control method for inspecting a substrate while appropriately controlling the temperature.

[0008] Technical solutions to technical problems

[0009] In order to solve the above technical problems, according to one method, an inspection system can be provided, which inspects a substrate while performing temperature control, including: a substrate holding portion that holds the above substrate; a detection portion that supplies inspection electric power to the electrode portion of the above substrate; a holding portion temperature adjustment mechanism that detects the temperature of the above substrate holding portion and adjusts the temperature of the above substrate holding portion; a detection portion temperature adjustment mechanism that detects the temperature of the above detection portion and adjusts the temperature of the above detection portion; and a control portion that inspects the above substrate while adjusting the temperature control performed by the above holding portion temperature adjustment mechanism and the above detection portion temperature adjustment mechanism.

[0010] Effects of the Invention

[0011] According to one aspect, an inspection system and a temperature control method for inspecting a substrate while appropriately controlling the temperature can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is an example of a three-dimensional diagram of an inspection system.

[0013] Figure 2 This is an example of a structural diagram of an inspection system.

[0014] Figure 3 This is an example of a plan view schematically showing the structure of a substrate.

[0015] Figure 4 This is an example of an enlarged view of an inspection system showing the vicinity of an electronic component.

[0016] Figure 5 This is an example of a diagram showing a heat flow model.

[0017] Figure 6 This is an example of a block diagram illustrating state estimation using an observer.

[0018] Figure 7 This is an example of a block diagram illustrating state feedback. DETAILED DESCRIPTION

[0019] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are given to the same or corresponding parts in each of the drawings.

[0020] use Figure 1 , an inspection system 1 as an example of an inspection system according to this embodiment will be described. Figure 1 This is an example of a perspective view of the inspection system 1 . Figure 2 This is an example of a structural diagram of the inspection system 1. Figure 2 , the components built into the inspection system 1 are schematically shown as a partial cross-sectional view.

[0021] In the semiconductor manufacturing process, a large number of electronic devices D having a predetermined circuit pattern are formed on a substrate W such as a semiconductor wafer (see the following). Figure 3 The formed electronic devices D are inspected for electrical characteristics and the like and sorted into acceptable and unacceptable products. The inspection of the electronic devices D is performed using the inspection system 1 on the substrate W before each electronic device D is diced, for example.

[0022] The inspection system 1 performs temperature control while inspecting a plurality of electronic devices D (see the following) formed on a substrate W. Figure 3 That is, the inspection system 1 supplies inspection power to the electronic device D when the electronic device D is at a predetermined inspection temperature or above, and performs an inspection of the electrical characteristics and the like at that time.

[0023] The inspection system 1 includes a storage chamber 2 , a loader 3 , and a tester 4 .

[0024] The storage chamber 2 has a shell 11 with a hollow interior. The storage chamber 2 has a mounting table (also called a "chuck") 10 for mounting the substrate W inside the shell 11. The mounting table 10 has an adsorption holding portion (not shown) that adsorbs and holds the substrate W in such a manner that the relative position of the substrate W with respect to the mounting table 10 does not shift. In addition, the storage chamber 2 is provided with a moving mechanism (not shown) inside the shell 11 for moving the mounting table 10 in the horizontal direction and the vertical direction. By using this moving mechanism, the relative position of the probe card 12 described later and the substrate W can be adjusted so that the desired electrode portion E (see the later-described electrode portion E) on the surface of the substrate W is positioned at the desired position. Figure 3 ) contacts the probe 12 a of the probe card 12 .

[0025] The storage chamber 2 has a probe card 12 inside the housing 11. The probe card 12 is arranged above the stage 10 so as to be opposite to the stage 10. The probe card 12 includes a plurality of needle-shaped probes 12a arranged corresponding to the electrode pads or solder bumps provided corresponding to the electrode portions E of the electronic devices D of the substrate W. The probe card 12 is connected to the tester 4 via the interface 13. Each probe 12a contacts the electrode portion E of each electronic device D of the substrate W during the electrical characteristics inspection, supplies the electric power from the tester 4 to the electronic device D via the interface 13, and transmits the signal from the electronic device D to the tester 4 via the interface 13.

[0026] The loader 3 is equipped with a FOUP (Front Opening Unify Pod), which serves as a transport container for storing substrates W. The loader 3 also includes a transport mechanism (not shown) for transporting substrates W. The transport mechanism removes substrates W stored in the FOUP and transports them to the mounting table 10 in the storage chamber 2. Furthermore, the transport mechanism receives substrates W from the mounting table 10 after the electrical characteristics inspection of electronic devices D has been completed and stores them in the FOUP.

[0027] The tester 4 includes a test board (not shown) that can reproduce a portion of the circuit structure of the motherboard on which the electronic device D is to be mounted. Furthermore, the test board of the tester 4 is connected to a tester computer 15 that determines whether the electronic device D is qualified based on signals from the electronic device D. By replacing the test board, the tester 4 can reproduce the circuit structures of various motherboards. Furthermore, the probe card 12 includes multiple probes 12a that contact multiple electrode portions E of the electronic device D. Furthermore, the tester 4 includes multiple detection devices for detecting the electrical characteristics of the electronic device D. Thus, the tester 4 can detect multiple electrical characteristics of the electronic device D.

[0028] The inspection system 1 also includes a user interface 16 for displaying information to the user or for the user to input instructions. The user interface 16 is composed of, for example, an input unit such as a touch panel or a keyboard, and a display such as a liquid crystal display.

[0029] Thus, the inspection system 1 includes the stage 10 as a substrate holding portion that holds the substrate W. Furthermore, the inspection system 1 includes a probe card 12 having probes 12 a, an interface 13 , and a tester 4 as a testing portion that tests the electrical characteristics of the electronic device D by supplying test power to the electrode portion E of the electronic device D provided on the substrate W.

[0030] Furthermore, the loader 3 includes a temperature control unit 14 . The temperature control unit 14 includes a power supply 25 , a cooler 26 , a power supply 55 , and a control unit 90 .

[0031] A heater 20 for heating the mounting table 10 is provided on the mounting table 10. A power supply 25 supplies electric power to the heater 20 provided on the mounting table 10. In addition, a refrigerant flow path 10a for circulating a heat transfer medium (antifreeze, etc.) is formed inside the mounting table 10. The cooler 26 circulates the temperature-regulated heat transfer medium in the refrigerant flow path 10a. Thus, in the inspection system 1, the holding portion temperature regulating mechanism for regulating the temperature of the substrate holding portion includes the heater 20, the power supply 25, the refrigerant flow path 10a, and the cooler 26. In addition, the structure of the holding portion temperature regulating mechanism is not limited to this.

[0032] In addition, the holding portion temperature adjustment mechanism includes a temperature detection portion 30 that detects the temperature of the substrate holding portion. The temperature detection portion 30 is provided on the mounting table 10 and detects the temperature Tchuck of the mounting table 10. The temperature Tchuck of the mounting table 10 detected by the temperature detection portion 30 is input to the control portion 90. In addition, in the figure, the case where the temperature detection portion 30 is single is described, but it is not limited to this. It is preferable to provide a plurality of temperature detection portions 30 on the mounting table 10 for the electronic device D that is supplied with electric power and generates heat. In addition, when switching the electronic device D that is supplied with electric power and generates heat, it is preferable to also switch the temperature detection portion 30 that detects the temperature Tchuck. In addition, it is preferable to detect the temperature Tchuck based on a model including a plurality of temperature detection portions 30.

[0033] In addition, the tester 4 is provided with a temperature regulating mechanism 50 for regulating the temperature of the probe card 12. The temperature regulating mechanism 50 may include a heater (not shown) for heating the probe card 12, a cooling fan (not shown) for cooling the probe card 12, and the like. The power supply 55 supplies electric power to the temperature regulating mechanism 50 provided in the tester 4. Thus, in the inspection system 1, the temperature regulating mechanism 50 is included as a detection unit temperature regulating mechanism for regulating the temperature of the detection unit. In addition, the structure of the detection unit temperature regulating mechanism is not limited to this. The detection unit temperature regulating mechanism may also include a structure for regulating the temperature of the detection unit by liquid cooling.

[0034] Furthermore, the detection unit temperature adjustment mechanism includes a temperature detection unit 60 for detecting the temperature of the detection unit. The temperature detection unit 60 is provided on the probe card 12 and detects the temperature Tprob of the probe card 12. The temperature Tprob of the probe card 12 detected by the temperature detection unit 60 is input to the control unit 90. While the temperature detection unit 60 is described as being provided on the probe card 12, this is not limiting. Alternatively, a temperature detection unit capable of detecting a temperature representative of the probe temperature may be used. For example, the temperature detection unit 60 may be a temperature detection unit that detects the temperature of the probe 12a. While the figure illustrates a single temperature detection unit 60, this is not limiting. For electronic devices D that are supplied with electrical power and generate heat, it is preferable to provide multiple temperature detection units 60 on the probe card 12. Furthermore, when switching between electronic devices D that are supplied with electrical power and generate heat, it is preferable to also switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model that includes multiple temperature detection units 60.

[0035] The tester 4 also includes a power detection unit 41 that detects test power (current and voltage) supplied from the tester 4 via the interface 13 and the probe card 12 to the electronic device D. The test power detected by the power detection unit 41 is input to the control unit 90 .

[0036] The control unit 90 includes a holding unit temperature control unit 91, a detection unit temperature control unit 92, and an analysis unit 93. The control unit 90 controls the holding unit temperature adjustment mechanism and the detection unit temperature adjustment mechanism so that the junction temperature Tj of the electronic device D (the temperature of the substrate W) reaches the inspection temperature. Furthermore, the control unit 90 controls the holding unit temperature adjustment mechanism and the detection unit temperature adjustment mechanism so that the temperature difference between the substrate W and the probe card 12 is within a predetermined threshold.

[0037] The holding portion temperature control portion 91 controls the holding portion temperature adjustment mechanism so that the temperature Tchuck of the substrate holding portion detected by the temperature detection portion 30 becomes the target temperature. In addition, in the figure, the temperature detection portion 30 is described as a single case, but it is not limited to this. Preferably, for the electronic device D that is supplied with electric power and generates heat, multiple temperature detection portions 30 are provided on the mounting table 10. In addition, when switching the electronic device D that is supplied with electric power and generates heat, it is preferably also switched the temperature detection portion 30 that detects the temperature Tchuck. In addition, it is preferable to detect the temperature Tchuck based on a model including multiple temperature detection portions 30. That is, the holding portion temperature control portion 91 controls the heat generation of the heater 20 by controlling the power supply 25, thereby controlling the temperature Tchuck of the mounting table 10. In addition, the holding portion temperature control portion 91 can also control the temperature of the heat transfer medium supplied by the cooler 26 to the refrigerant flow path 10a by controlling the cooler 26, thereby controlling the temperature Tchuck of the mounting table 10.

[0038] The detection unit temperature control unit 92 controls the detection unit temperature adjustment mechanism so that the temperature Tprob detected by the temperature detection unit 60 reaches the target temperature. Specifically, the detection unit temperature control unit 92 controls the temperature adjustment mechanism 50 by controlling the power supply 55, thereby controlling the temperature Tprob of the probe card 12. While the illustrations illustrate a single temperature detection unit 60, this is not limiting. For electronic devices D that are supplied with power and generate heat, it is preferable to provide multiple temperature detection units 60 on the probe card 12. Furthermore, when the electronic device D that is supplied with power and generates heat is switched, it is preferable to also switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model that includes multiple temperature detection units 60.

[0039] The analysis unit 93 is based on the Figure 5 The heat flow model shown in FIG. 1 is used to estimate the junction temperature Tj of the electronic device D (the temperature of the substrate W). Then, the control unit 90 adjusts the chuck heat flux (see the following for details). Figure 5 The heat flux Ic described above is adjusted to make the temperature Tchuck the target temperature (maintaining the target temperature) and the probe heat flux (Probe Heat Flux, see the following Figure 5The heat flow Ip described is to make the temperature Tprob become the target temperature (detection unit target temperature). The holding unit temperature control unit 91 controls the holding unit temperature adjustment mechanism based on the holding unit target temperature calculated by the analysis unit 93. In addition, the detection unit temperature control unit 92 controls the detection unit temperature adjustment mechanism based on the detection unit target temperature calculated by the analysis unit 93. Here, there are a large number of solutions for the holding unit target temperature and the detection unit target temperature calculated by the analysis unit 93. In addition, in reality, about 40% of the heat is dissipated from the electronic device D to the probe card 12. The amount of heat absorbed from the electronic device D to the probe card 12 is in a trade-off relationship with the thermal expansion difference between the probe card 12 and the substrate W. The amount of heat absorbed from the electronic device D to the probe card 12 can be calculated as the amount of heat absorbed in the range where the probe 12a enters the pad (electrode portion E).

[0040] Next, use Figure 3 , illustrating a substrate W inspected in the above-mentioned inspection system 1. Figure 3 It is a plan view schematically showing the structure of the substrate W.

[0041] On the substrate W, etching and wiring are performed on a roughly disk-shaped silicon substrate, such as Figure 3 As shown, multiple electronic devices D are formed on the surface at predetermined intervals. Electrode portions E are formed on the surface of a substrate W, which is an electronic device D. These electrodes E are electrically connected to the circuit elements within the electronic device D. By applying a voltage to the electrode portions E, current can flow through the circuit elements within each electronic device D.

[0042] Figure 4 This is an example of an enlarged view of the inspection system 1 in which the vicinity of the electronic device D is enlarged.

[0043] When inspecting the electrical characteristics of the electronic device D, the substrate W is held on the mounting table 10. That is, the electronic device D is thermally connected to the mounting table 10. In addition, when inspecting the electrical characteristics of the electronic device D, the probe 12a abuts against the electrode portion E of the electronic device D. That is, the electronic device D is thermally connected to the probe card 12 via the probe 12a. In addition, the probe card 12 abuts against the interface 13, and the interface 13 abuts against the tester 4. That is, the probe card 12 is thermally connected to the tester 4 via the interface 13, and the tester 4 is thermally connected to the electronic device D via the probe card 12.

[0044] The temperature Tchuck of the mounting table 10 is detected by the temperature detection unit 30 . The temperature Tprob of the probe card 12 is detected by the temperature detection unit 60 .

[0045] Here, by flowing a current through a PN junction (e.g., a transistor) formed in an electronic device D, the junction temperature Tj of the electronic device D can be detected based on the correlation between the generated electromotive force and temperature. However, when inspecting an electronic device D such as a logic IC, for example, under conditions where a clock is generated, the junction temperature Tj may not be properly detected due to the influence of noise, etc.

[0046] Furthermore, when inspecting electronic devices D, a temperature difference occurs between the temperature Tchuck of the mounting table 10 and the junction temperature Tj of the electronic devices D due to the thermal resistance between the mounting table 10 and the substrate W (electronic devices D). Therefore, when inspecting electronic devices D by controlling the temperature Tchuck of the mounting table 10 so that it reaches the inspection temperature, the junction temperature Tj of the electronic devices D may become higher than the inspection temperature. This means that the electronic devices D are inspected at a temperature higher than the inspection temperature, potentially reducing the yield of the electronic devices D.

[0047] Furthermore, when the electronic device D is inspected by temperature-controlling the mounting table 10 so that the temperature Tchuck reaches the inspection temperature, the heat flow from the electronic device D to the inspection unit may interfere.

[0048] The substrate W is mainly made of silicon, for example. The probe card 12 is mainly made of glass epoxy, for example. The probe 12a may be detached from the electrode portion E due to a temperature difference between the substrate W and the probe card 12, resulting in a thermal expansion difference.

[0049] Next, temperature control in the inspection system 1 of this embodiment will be described. Figure 5 This is an example of a diagram showing a heat flow model.

[0050] exist Figure 5 In the figure, the heat flow Id of the electronic device D, the thermal resistance Rd of the electronic device D, the heat capacity Cd of the electronic device D, and the junction temperature Tj of the electronic device D are shown. In addition, the heat flow Ip of the probe card 12, the thermal resistance Rp of the probe card 12, the heat capacity Cp of the probe card 12, the temperature of the probe card 12 (probe card temperature) Tprob, the heat flow Idp from the probe card 12 to the electronic device D, and the thermal resistance Rdp from the probe card 12 to the electronic device D are shown. In addition, the heat flow Ic of the stage 10, the thermal resistance Rc of the stage 10, the heat capacity Cc of the stage 10, the temperature of the stage 10 (chuck temperature) Tchuck, the heat flow Idc from the stage 10 to the electronic device D, and the thermal resistance Rdc from the stage 10 to the electronic device D are shown. In addition, in Figure 5 In the embodiment, the temperature detection unit 30 (refer to Figure 2 、 Figure 4) is described for a single case, but the performance can be further improved by configuring multiple temperature detection units 30 and switching them or detecting the temperature Tchuck based on a model including multiple temperature detection units 30.

[0051] Here, various thermal resistances and various heat capacities are values ​​predetermined (values ​​that can be obtained) based on the structures of the substrate holding portion, the substrate W, and the detection portion.

[0052] The heat flow Id of the electronic device D corresponds to the heat flow generated by the test power detected by the power detection unit 41. The heat flow Ic of the mounting table 10 corresponds to the heat flow in the holding unit temperature control mechanism. The heat flow Ip of the probe card 12 corresponds to the heat flow in the detection unit temperature control mechanism. In other words, the heat flows Id, Ic, and Ip are values ​​that can be detected by the control unit 90.

[0053] The temperature of the mounting table 10 (chuck temperature) Tchuck corresponds to the temperature detected by the temperature detection unit 30. The temperature of the probe card 12 (probe card temperature) Tprob corresponds to the temperature detected by the temperature detection unit 60. That is, the temperatures Tchuck and Tprob are values ​​that the control unit 90 can detect.

[0054] On the other hand, the junction temperature Tj of the electronic device D is a temperature that the control unit 90 cannot directly measure.

[0055] exist Figure 5 In the heat flow model shown, the differential value of the junction temperature Tj (Tj point), the differential value of the temperature Tprob of the probe card 12 (Tprob point), and the differential value of the temperature Tchuck of the mounting stage 10 (Tchuck point) can be expressed by the following equations.

[0056] [Formula 1]

[0057]

[0058] Here, when X1=Tj, X2=Tchuck, X3=Tprob, U1=id, U2=ic, and U3=ip, it can be expressed by the following formula.

[0059] [Formula 2]

[0060]

[0061] That is, the above formula can be expressed by dx / dt=Ax(t)+Bu(t) and y(t)=Cx(t).

[0062] Figure 6This is an example of a block diagram illustrating state estimation using an observer. Block diagram 600 includes a controlled object 610 and an observer 620. The controlled object 610 corresponds to the above equation. Here, x(t) is a value that cannot be measured. By using the observer 620, an estimated value of x(t) can be calculated (in Figure 6 In FIG. 6 , the estimated values ​​of the observer 620 are marked with a hat symbol “^”).

[0063] That is, the analysis unit 93 Figure 5 The heat flow model shown is constructed using Figure 6 The observer 620 shown can estimate the junction temperature Tj of the electronic device D which cannot be measured directly.

[0064] Figure 7 700 is an example of a block diagram for explaining state feedback. The block diagram 700 includes an integral controller 710, an operator 720, a controlled object 730, an operator 740, and an operator 750. Although not shown in the figure, Figure 7 The control object 730 shown is Figure 6 The block diagram 600 also includes an observer. The estimated value of x(t) estimated by the observer is input to the integral controller 710 and the operator 740.

[0065] The integral controller 710 performs state feedback on the estimated value of x(t) estimated by the observer.

[0066] Here, the estimated value of X1 (X1 cap) estimated by the observer is referred to as Y1. That is, Y1 is the junction temperature Tj estimated by the observer. The difference between the estimated value of X1 (X1 cap) estimated by the observer and X3 is referred to as Y2. That is, Y2 is the difference between the junction temperature Tj estimated by the observer and the temperature Tprob, and is the estimated value of the temperature difference between the substrate W (electronic device D) and the probe card 12. These can be expressed by the following equations.

[0067] [Formula 3]

[0068]

[0069] Operator 740 converts Y m The estimated value (Y m hat) is fed back to the operator 750.

[0070] Thus, the junction temperature Tj and the difference between the junction temperature Tj and the temperature Tprob are fed back.

[0071] In addition, the integral controller 710 is preferably configured so that Y2 is faster than Y1.

[0072] As described above, the control section 90 inspects the substrate W while adjusting the temperature control performed by the holding section temperature control mechanism and the detection section temperature control mechanism.

[0073] Specifically, the control unit 90 obtains the heat flow (Id) generated by the inspection power output when the inspection power is supplied, the heat flow (Ic) in the holding unit temperature control mechanism, and the heat flow (Ip) in the detection unit temperature control mechanism, and comprehensively analyzes them. This allows the substrate W to be inspected while adjusting the temperature (junction temperature Tj) of the substrate W. Consequently, when inspecting electronic devices D, the electronic devices D can be brought to the inspection temperature, enabling appropriate inspection. Furthermore, a decrease in the yield of the electronic devices D can be prevented.

[0074] Furthermore, the control unit 90 obtains the heat flow (Id) generated by the inspection power output when the inspection power is supplied, the heat flow (Ic) in the holding unit temperature control mechanism, and the heat flow (Ip) in the detection unit temperature control mechanism, and comprehensively analyzes these. This allows the substrate W to be inspected while adjusting the temperature difference between the substrate W temperature (junction temperature Tj) and the detection unit temperature (temperature Tprob). This suppresses the thermal expansion difference between the substrate W and the probe card 12, preventing the probes 12a from detaching from the electrode portion E. Furthermore, friction between the probes 12a and the electrode portion E can be minimized.

[0075] Furthermore, the analysis unit 93 of the control unit 90 can estimate the junction temperature Tj of the electronic device D based on the heat flow (Id) generated by the test power, the heat flow in the holding unit temperature control mechanism (Ic), the heat flow in the detection unit temperature control mechanism (Ip), the temperature of the substrate holding unit (Tchuck), and the temperature of the detection unit (Tprob). This reduces the packaging cost of the electronic device D compared to a configuration in which the electrode unit E is provided on the electronic device solely for detecting the junction temperature Tj. Furthermore, the number of probes 12a provided on the probe card 12 can be reduced.

[0076] The heat flow (Id) generated by the test power can be obtained, for example, from the test power detected by the power detection unit 41. The heat flow (Ic) in the holding unit temperature adjustment mechanism can be obtained, for example, from the power applied to the power source 25. The heat flow (Ip) in the detection unit temperature adjustment mechanism can be obtained, for example, from the power applied to the power source 55.

[0077] The control unit 90 then controls the holding unit temperature control mechanism and the detection unit temperature control mechanism so that the junction temperature Tj reaches the inspection temperature. This allows the electronic device D to be inspected while maintaining its junction temperature Tj at the inspection temperature, enabling appropriate inspection. Furthermore, a decrease in the yield of the electronic devices D can be prevented.

[0078] Furthermore, the control unit 90 controls the holding unit temperature control mechanism and the detection unit temperature control mechanism so that the temperature difference between the substrate W and the probe card 12 is within a predetermined threshold. This suppresses the thermal expansion difference and prevents the probes 12a from detaching from the electrode portion E. Furthermore, friction between the probes 12a and the electrode portion E can be suppressed.

[0079] In addition, the analysis unit 93 of the control unit 90 calculates the holding unit target temperature and the detection unit target temperature based on the heat flow (Id) generated by the inspection electric power, the heat flow (Ic) in the holding unit temperature adjustment mechanism, the heat flow (Ip) in the detection unit temperature adjustment mechanism, the temperature of the substrate holding unit (Tchuck) and the temperature of the detection unit (Tprob).

[0080] The holding section temperature control section 91 controls the temperature of the substrate holding section to the holding section target temperature. In other words, the holding section temperature control section 91 controls the power supply 25 and / or the cooler 26 of the heater 20 so that the temperature Tchuck detected by the temperature detection section 30 approaches the holding section target temperature. Furthermore, the detection section temperature control section 92 controls the temperature of the detection section to the detection section target temperature. In other words, the detection section temperature control section 92 controls the power supply 55 of the temperature adjustment mechanism 50 so that the temperature Tprob detected by the temperature detection section 60 approaches the detection section target temperature.

[0081] Here, the holding unit target temperature and the detection unit target temperature are set so that the estimated junction temperature Tj approaches the inspection temperature. This allows the junction temperature Tj of the electronic device D to be kept at the inspection temperature during inspection, enabling appropriate inspection. Furthermore, a decrease in the yield of the electronic devices D can be prevented.

[0082] Furthermore, the holding unit target temperature and the detection unit target temperature are set so that the difference between the estimated junction temperature Tj and the temperature Tprob of the probe card 12 is equal to or less than a threshold value. This suppresses thermal expansion differences and prevents the probe 12a from detaching from the electrode portion E. Furthermore, friction between the probe 12a and the electrode portion E can be suppressed.

[0083] The inspection system 1 has been described above, but the present invention is not limited to the above-described embodiment and other aspects, and various modifications and improvements are possible within the scope of the gist of the present invention as described in the claims.

[0084] In addition, this application claims priority based on Japanese Patent Application No. 2023-4069 for which it applied on January 13, 2023, and incorporates the entire content of this Japanese Patent Application into this application by reference.

[0085] Description of Reference Numerals

[0086] W substrate

[0087] D Electronic Devices

[0088] E Electrode

[0089] 1. Check the system

[0090] 2 Storage Room

[0091] 3 Loader

[0092] 4 tester

[0093] 10. Loading platform

[0094] 10a Refrigerant flow path

[0095] 12 probe cards

[0096] 12a probe

[0097] 13 Interface

[0098] 14 Temperature Control Unit

[0099] 20 Heater

[0100] 25 Power Supply

[0101] 26 Cooler

[0102] 30 Temperature detection unit

[0103] 41 Electric power detection unit

[0104] 50 Temperature regulation mechanism

[0105] 55 Power Supply

[0106] 90 Control Department

[0107] 91 Maintaining unit temperature control unit

[0108] 92 Detection unit temperature control unit

[0109] 93 Analysis Department

[0110] 60 Temperature detection unit.

Claims

1. An inspection system, characterized in that: The inspection system inspects the substrate while controlling the temperature, including: a substrate holding portion for holding the substrate; a detection unit for supplying inspection electric power to the electrode portion of the substrate; a substrate holding portion temperature regulating mechanism for detecting a temperature of the substrate holding portion and regulating the temperature of the substrate holding portion; a detection portion temperature adjustment mechanism that detects the temperature of the detection portion and adjusts the temperature of the detection portion; and Control Department, The control unit inspects the substrate while adjusting the temperature control performed by the holding unit temperature control mechanism and the detection unit temperature control mechanism.

2. The inspection system according to claim 1, wherein: The control unit obtains the heat flow generated by the inspection electric power output when the inspection electric power is supplied, the heat flow in the holding unit temperature adjustment mechanism, and the heat flow in the detection unit temperature adjustment mechanism, and comprehensively analyzes them, thereby adjusting the temperature of the substrate while inspecting the substrate.

3. The inspection system according to claim 1, wherein: The control unit obtains the heat flow generated by the inspection electric power output when the inspection electric power is supplied, the heat flow in the holding unit temperature adjustment mechanism, and the heat flow in the detection unit temperature adjustment mechanism, and comprehensively analyzes them, thereby adjusting the temperature difference between the substrate and the detection unit while inspecting the substrate.

4. The inspection system according to claim 1, wherein: The control unit estimates the temperature of the substrate based on the heat flow generated by the inspection power output when the inspection power is supplied, the heat flow in the holding unit temperature adjustment mechanism, the heat flow in the detection unit temperature adjustment mechanism, the temperature of the substrate holding unit and the temperature of the detection unit.

5. The inspection system according to claim 4, characterized in that: The control unit controls the holding unit temperature adjustment mechanism and the detection unit temperature adjustment mechanism so that the estimated temperature of the substrate approaches a predetermined inspection temperature.

6. The inspection system according to claim 4 or 5, characterized in that: The control unit controls the holding unit temperature adjustment mechanism and the detection unit temperature adjustment mechanism so that the difference between the estimated temperature of the substrate and the temperature of the detection unit is within a predetermined threshold value.

7. The inspection system according to claim 1, wherein: The control unit calculates a holding unit target temperature and a detection unit target temperature based on a heat flow generated by the inspection electric power output when the inspection electric power is supplied, a heat flow in the holding unit temperature adjustment mechanism, a heat flow in the detection unit temperature adjustment mechanism, a temperature of the substrate holding unit, and a temperature of the detection unit, The holding portion temperature adjustment mechanism controls the temperature of the substrate holding portion to the holding portion target temperature. The detection portion temperature adjustment mechanism controls the temperature of the detection portion to the detection portion target temperature.

8. The inspection system according to claim 1, wherein: The detection section includes a detection device for detecting a plurality of electrical characteristics.

9. The inspection system according to claim 1, wherein: The substrate has the electrode portion and an electronic device connected to the electrode portion. The detection section detects electrical characteristics of the electronic device to which the inspection electric power is supplied.

10. A temperature control method, characterized in that: The temperature control method is a temperature control method for checking the system, The inspection system inspects the substrate while controlling the temperature, and includes: a substrate holding portion for holding the substrate; a detection portion for supplying inspection electric power to an electrode portion of the substrate; a holding portion temperature adjustment mechanism for detecting the temperature of the substrate holding portion and adjusting the temperature of the substrate holding portion; and a detection portion temperature adjustment mechanism for detecting the temperature of the detection portion and adjusting the temperature of the detection portion. The temperature control method inspects the substrate while adjusting the temperature control performed by the holding portion temperature control mechanism and the detection portion temperature control mechanism.

11. The temperature control method according to claim 10, wherein: The heat flow generated by the inspection electric power output when the inspection electric power is supplied, the heat flow in the holding part temperature adjustment mechanism, and the heat flow in the detection part temperature adjustment mechanism are obtained and analyzed comprehensively, thereby adjusting the temperature of the substrate while inspecting the substrate.

12. The temperature control method according to claim 10, wherein: The heat flow generated by the inspection electric power output when the inspection electric power is supplied, the heat flow in the holding part temperature adjustment mechanism, and the heat flow in the detection part temperature adjustment mechanism are obtained and analyzed comprehensively, thereby adjusting the temperature difference between the substrate and the detection part while inspecting the substrate.

13. The temperature control method according to claim 10, wherein: The temperature of the substrate is estimated based on the heat flow generated by the inspection power output when the inspection power is supplied, the heat flow in the holding part temperature adjustment mechanism, the heat flow in the detection part temperature adjustment mechanism, the temperature of the substrate holding part and the temperature of the detection part.

14. The temperature control method according to claim 13, wherein: The holding portion temperature adjustment mechanism and the detection portion temperature adjustment mechanism are controlled so that the estimated temperature of the substrate approaches a predetermined inspection temperature.

15. The temperature control method according to claim 13 or 14, characterized in that: The holding portion temperature adjustment mechanism and the detection portion temperature adjustment mechanism are controlled so that the difference between the estimated temperature of the substrate and the temperature of the detection portion is within a predetermined threshold value.

16. The temperature control method according to claim 13, characterized in that: include: a step of calculating a holding portion target temperature and a detecting portion target temperature based on a heat flow generated by the inspection electric power output when the inspection electric power is supplied, a heat flow in the holding portion temperature adjustment mechanism, a heat flow in the detecting portion temperature adjustment mechanism, a temperature of the substrate holding portion, and a temperature of the detecting portion; controlling the holding portion temperature adjustment mechanism to control the temperature of the substrate holding portion to the holding portion target temperature; and The step of controlling the detection portion temperature adjustment mechanism to control the temperature of the detection portion to the detection portion target temperature.

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