Temporary bonding material as well as preparation method, application and use method thereof

Abstract

The invention provides a temporary bonding material as well as a preparation method, application and a use method thereof. The adhesive comprises the following components in percentage by mass: 59-79% of an organic solvent, 5-10% of matrix resin, 15-30% of tackifying resin, 0.1-1% of an antioxidant and 0.1-1% of a flatting agent. A bonding layer formed by the temporary bonding material provided by the invention has the characteristics of high hardness, high temperature resistance, chemical liquid corrosion resistance, stable performance and easiness in cleaning, and can be widely applied to thin wafer back surface processing, deep silicon etching TSV through hole processing and other process processing.

Description

Technical Field

[0001] The present invention belongs to the technical field of bonding materials, and in particular relates to a temporary bonding material and a preparation method, application and use method thereof. Background Art

[0002] Currently, semiconductor material manufacturing is moving toward larger sizes, multi-chip stacking, and ultra-thin wafers. In the manufacturing process, the quality of wafer surface processing is crucial to the success or failure of related semiconductor device processes. Sapphire substrates are often used in wafer processing, but their high hardness and brittleness make wafer surface processing extremely difficult. This is especially true during wafer grinding. Device wafers thinned to less than 100μm, or even less than 60μm, are extremely fragile, requiring support across the entire wafer size to prevent local cracking and breakage.

[0003] In order to solve the above problems, temporary bonding / debonding is one of the commonly used process methods. Its main principle is to temporarily bond the wafer to a carrier of similar diameter (such as glass, sapphire or silicon material) through a temporary bonding glue, and use the carrier to support and transport the thin wafer. At the same time, it can prevent the thin wafer from deformation. After completing the relevant process, the carrier is separated from the thin wafer.

[0004] At the same time, with the continuous advancement of semiconductor technology, chip integration is becoming increasingly higher and feature sizes are shrinking, placing increasingly stringent demands on wafer surface cleanliness and particle size. During wafer production and processing, if impurity particles appear on the surface, even if they are tiny, they can cause a series of serious problems. For example, particles can cause chip short circuits, affect the accuracy of photolithographic patterns, and hinder the uniform reaction of chemical reagents, leading to decreased chip performance, reduced yield, or even complete failure.

[0005] CN104204126A discloses an adhesive composition for wafer processing films, which is primarily used to temporarily fix wafers during wafer processing or to protect and reinforce wafers. The composition also contains an acrylic polymer and a photosensitive gas generator, which can increase wafer wettability and prevent wafer bottoming. However, the aforementioned patent has the following defects and shortcomings: the temporary bonding composition is reactive, has a large shrinkage force during curing, has poor film surface uniformity, and is prone to local distortion during wafer bonding, resulting in weak chemical resistance of the prepared wafer.

[0006] Therefore, it is desirable to provide a temporary bonding material that has good film surface uniformity, good supporting effect, excellent stability, and is easy to clean. Summary of the Invention

[0007] In view of the deficiencies of the prior art, the object of the present invention is to provide a temporary bonding material and a preparation method, application and use method thereof.

[0008] To achieve this object, the present invention adopts the following technical solutions:

[0009] In one aspect, the present invention provides a temporary bonding material comprising the following components, calculated by weight percentage:

[0010]

[0011] In the present invention, by compounding a specific content of the main resin and the tackifying resin, it can have excellent heat resistance; at the same time, the introduction of a specific content of the tackifying resin can improve the bonding performance of the bonding layer formed by the temporary bonding material, and the bonding layer can tightly bond the wafer to be processed and the supporting substrate, effectively preventing defects in the bonding pair, thereby ensuring subsequent processing.

[0012] At the same time, the adhesive layer formed by the temporary bonding material provided by the present invention has a high hardness at room temperature, which can provide sufficient support to ensure that it will not break during subsequent processing. At the same time, the adhesive layer is easy to clean, and there are very few residual particulate impurities after cleaning, which can greatly improve the product yield.

[0013] The temporary bonding material provided by the present invention can temporarily fix the wafer on the support plate before thinning, cutting, polishing and other processes, supporting it to complete subsequent processing; it can then be slid away from the support plate by heating and can be easily cleaned using a cleaning agent.

[0014] In the present invention, the organic solvent is 59-79%, such as 59%, 60%, 61%, 62%, 64%, 65%, 68%, 70%, 72%, 74%, 75%, 76%, 78%, 79%, etc., the main resin is 5-10%, such as 5%, 5.5%, 6%, 6.5%, 7%, 7.5%, 8%, 8.5%, 9%, 9.5%, 10%, etc., and the tackifying resin is 15 -30%, for example 15%, 16%, 18%, 20%, 21%, 22%, 25%, 26%, 28%, 30%, etc., the antioxidant 0.1-1%, for example 0.1%, 0.2%, 0.4%, 0.5%, 0.6%, 0.8%, 1%, etc., the leveling agent 0.1-1%, for example 0.1%, 0.2%, 0.4%, 0.5%, 0.6%, 0.8%, 1%, etc.

[0015] Preferably, the main resin is selected from any one or a combination of at least two of ethylene propylene rubber (EPM or EPDM), polyisobutylene resin (PIB), styrene butadiene rubber, butadiene rubber or isoprene rubber, preferably ethylene propylene rubber and / or polyisobutylene resin.

[0016] Preferably, the main resin is a thermoplastic resin having an average weight average molecular weight of 30,000-800,000 Daltons, such as 30,000 Daltons, 40,000 Daltons, 50,000 Daltons, 80,000 Daltons, 100,000 Daltons, 200,000 Daltons, 300,000 Daltons, 400,000 Daltons, 500,000 Daltons, 600,000 Daltons, 700,000 Daltons, 800,000 Daltons, etc., preferably 50,000-600,000 Daltons.

[0017] Preferably, the tackifying resin is selected from any one or a combination of at least two of terpene resin, hydrogenated C5 petroleum resin, hydrogenated C9 petroleum resin or hydrogenated DCPD petroleum resin, preferably any one or a combination of at least two of hydrogenated C5 petroleum resin, hydrogenated C9 petroleum resin or hydrogenated DCPD petroleum resin.

[0018] Preferably, the tackifying resin has a softening point (ring and ball softening point) of 80-160°C, for example, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, etc., and an average weight-average molecular weight of 200-10,000 Daltons, for example, 200 Daltons, 300 Daltons, 500 Daltons, 1,000 Daltons, 2,000 Daltons, 3,000 Daltons, 5,000 Daltons, 6,000 Daltons, 8,000 Daltons, 100,000 Daltons, etc., preferably 400-3,000 Daltons.

[0019] The resin selected in the present invention is basically a non-polar resin, which can form a strong hydrophobic environment on the surface of the bonding layer formed by the bonding glue, can avoid the invasion of highly polar solvents or strong acid and strong base solutions, and thus can improve the strong acid, alkali and chemical reagent resistance of the bonding layer formed by the temporary bonding material.

[0020] Preferably, the organic solvent is selected from any one or a combination of at least two of p-menthane, limonene, dodecene, heptane, cyclohexane, ethylcyclohexane, mesitylene or decalin, preferably any one or a combination of at least two of p-menthane, dodecene or ethylcyclohexane.

[0021] Preferably, the antioxidant is selected from hindered phenol antioxidants and / or phosphite antioxidants, preferably hindered phenol antioxidants.

[0022] Preferably, the hindered phenol antioxidant includes antioxidant 1010 and / or antioxidant 1076.

[0023] Preferably, the phosphite antioxidant includes antioxidant 168 and / or antioxidant 626.

[0024] Preferably, the leveling agent is selected from any one or a combination of at least two of silicone, acrylate or other leveling agents, preferably acrylic acid.

[0025] Preferably, the silicones include BYK-323 and / or BYK-378.

[0026] Preferably, the acrylates include BYK-361N and / or BYK-397.

[0027] Preferably, the other wetting and leveling agents include a mixture of modified succinic acid and ester, such as BYK-3410.

[0028] The specific wetting and leveling agent selected in the present invention can effectively reduce the surface tension of the bonding adhesive, improve the spreading ability of the bonding adhesive on the surface of the substrate, so that the bonding adhesive can be evenly spin-coated on the wafer surface, avoiding uneven thickness of the adhesive coating, and reducing undesirable problems such as bubbles and slippage during wafer bonding. The addition of the leveling agent ensures a uniform film surface while having no effect on the bonding performance of the film layer.

[0029] In a second aspect, the present invention provides a method for preparing the temporary bonding material according to the first aspect, the preparation method comprising:

[0030] The temporary bonding material is obtained by mixing an organic solvent, a main resin, a tackifying resin, a leveling agent and an antioxidant.

[0031] Preferably, the mixing temperature is 25-40°C, for example, 25°C, 26°C, 27°C, 28°C, 29°C, 30°C, 32°C, 35°C, 38°C, 39°C, 40°C, etc.

[0032] Preferably, the preparation method comprises:

[0033] The organic solvent and the main resin are mixed for the first time at 25-40° C., and then the tackifying resin, the leveling agent and the antioxidant are added and mixed for the second time at 25-40° C. until a transparent liquid is formed, and the temporary bonding material is obtained by filtering.

[0034] Preferably, the temperature is controlled by a cooling water circulation system.

[0035] Preferably, the first mixing and the second mixing are both performed by stirring, and preferably the stirring speed is independently selected from 100-400 rpm, such as 100 rpm, 150 rpm, 200 rpm, 250 rpm, 300 rpm, 350 rpm, 400 rpm, etc.

[0036] Preferably, the first mixing time is 3-7 days, such as 3 days, 4 days, 5 days, 6 days, 7 days, etc.

[0037] Preferably, the second mixing time is 5-15 h, for example, 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, 11 h, 12 h, 13 h, 14 h, 15 h, etc.

[0038] Preferably, the filter element used for the filtration has a precision of 0.45-2.0 μm, such as 0.45 μm, 0.50 μm, 0.60 μm, 0.70 μm, 0.80 μm, 0.90 μm, 1.0 μm, 1.5 μm, 2.0 μm, etc.

[0039] In a third aspect, the present invention provides an application of the temporary bonding material as described in the first aspect in a wafer processing process, preferably an application in thin wafer backside processing or TSV through-holes in deep silicon etching.

[0040] The adhesive layer formed by the temporary bonding material provided by the present invention has the characteristics of high hardness, high temperature resistance, chemical liquid corrosion resistance, stable performance and easy cleaning. It can be widely used in thin wafer backside processing, deep silicon etching TSV through-silicon via (Through Silicon Via) and other process processing.

[0041] Preferably, in the application of the wafer processing, the application method includes:

[0042] A stack of wafers and a sapphire support substrate (substrate) bonded by the temporary bonding material is provided; the sapphire support substrate is removed by heating and sliding, and a bonding layer formed by residual temporary bonding material is cleaned and removed by a cleaning agent, including cleaning the periphery and back side of the wafer or the bonding layer remaining on the wafer after thermal sliding.

[0043] Preferably, the cleaning agent includes Samcien WLP Remover / Remover3 or Samcien WLPTBR2.

[0044] In a fourth aspect, the present invention provides a use of the temporary bonding material as described in the first aspect in wafer-level packaging, compound semiconductor processing or MEMS processing (Micro-Electro-Mechanical Systems).

[0045] In a fifth aspect, the present invention provides a method for using the temporary bonding material according to the first aspect, the method comprising:

[0046] placing the temporary bonding material between the support substrate and the wafer;

[0047] heating the temporary bonding material to solidify it and form a bonding layer;

[0048] After the wafer processing is completed, the supporting substrate is removed by heating;

[0049] Chemical cleaning removes the remaining adhesive layer on the wafer surface.

[0050] Preferably, the temperature for heating and removing the supporting substrate is 190-220°C, for example, 190°C, 195°C, 200°C, 205°C, 210°C, 215°C, 220°C, etc.

[0051] Preferably, the method of use comprises:

[0052] S1. coating the temporary bonding material on the wafer;

[0053] S2. heating the wafer coated with the temporary bonding material;

[0054] S3. Laminating the adhesive surface formed by the temporary bonding material to the substrate, heating and bonding, and completing the temporary bonding of the wafer (forming a bonding pair);

[0055] S4. Processing the back side (wafer) of the bonded pair;

[0056] S5. Heating slide unloading (removing substrate);

[0057] S6. Cleaning the temporary bonding material remaining on the wafer surface using a cleaning agent;

[0058] S7. Remove the cleaning agent using isopropyl alcohol.

[0059] Preferably, the coating has a thickness of 10-30 μm, for example, 10 μm, 12 μm, 14 μm, 15 μm, 16 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, etc.

[0060] Preferably, during the coating process, the amount of the temporary bonding material used is 10-20 mL, for example, 10 mL, 11 mL, 12 mL, 13 mL, 15 mL, 16 mL, 18 mL, 19 mL, 20 mL, etc., and the coating method is preferably spin coating, and the spin coating rate is preferably 1000-2000 rpm, for example, 1000 rpm, 1100 rpm, 1200 rpm, 1500 rpm, 1600 rpm, 1800 rpm, 2000 rpm, etc., and the time is 30-60 sec, for example, 30 sec, 35 sec, 40 sec, 45 sec, 50 sec, 55 sec, 60 sec, etc.

[0061] Preferably, the heating temperature in S2 is 140-160°C, for example, 140°C, 145°C, 150°C, 155°C, 160°C, etc., and the heating time is preferably 4-10min, for example, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc., preferably 6min.

[0062] Preferably, the substrate is selected from SiC or GaAs.

[0063] Preferably, the heating bonding is carried out under vacuum, and the temperature of the heating bonding is preferably 180-210°C, for example, 180°C, 185°C, 190°C, 195°C, 200°C, 205°C, 210°C, etc., and the pressure of the heating bonding is preferably 1-10kN, for example, 1kN, 2kN, 4kN, 5kN, 6kN, 7kN, 8kN, 9kN, 10kN, etc., and the time of the heating bonding is preferably 5-10min, for example, 5min, 6min, 7min, 8min, 9min, 10min, etc., preferably 10min.

[0064] Preferably, the processing methods include but are not limited to grinding, polishing, photolithography, baking, chemical vapor deposition, etc.

[0065] Preferably, the temperature of the heated sliding unloading plate is 190-220°C, preferably 190°C, 195°C, 200°C, 205°C, 210°C, 215°C, 220°C, etc.

[0066] Preferably, the cleaning agent is selected from Samcien Remover or Samcien WLP TBR2, and preferably the cleaning method includes spraying or soaking.

[0067] Exemplarily, the method of use includes:

[0068] (1) Place an 8-inch wafer on a spin coater, start the vacuum system, fix the wafer with a suction cup, and evenly pour 10-20 mL (e.g., 10 mL, 12 mL, 14 mL, 15 mL, 16 mL, 18 mL, etc.) of temporary bonding material on the wafer. Start spin coating and set the spin coating speed to 1000-2000 rpm / 30-60 sec;

[0069] (2) Close the vacuum chuck, remove the wafer coated with the temporary bonding material, place it in an oven at 140-160°C and bake it for 4-10 minutes, preferably 6 minutes;

[0070] (3) Lay the baked wafer adhesive surface and substrate (such as SiC or GaAs) on the surface of the wafer stage, evacuate, heat to 180-210 ° C, pressurize 1-10 kN, bond for 5-10 minutes (preferably 10 minutes), and cool to room temperature to complete the temporary bonding of the wafer;

[0071] (4) After bonding, the bonded pair is subjected to back-side processing such as grinding, polishing, photolithography, baking, chemical vapor deposition, etc., and the wafer is unloaded by sliding at a temperature of 190-220°C. Samcien Remover or Samcien WLP TBR2 is used as a cleaning agent, and the residual adhesive on the wafer surface is cleaned by spraying or immersing. Finally, the cleaning agent is rinsed with isopropyl alcohol.

[0072] The number of particles larger than 1 μm on the surface of the cleaned wafer obtained by the method provided by the present invention does not exceed 20, which can greatly improve the product yield.

[0073] Compared with the prior art, the present invention has the following beneficial effects:

[0074] (1) The temporary bonding material provided by the present invention has excellent heat resistance. At the same time, the introduction of a specific content of tackifying resin can improve the adhesion of the formed bonding layer, which can tightly bond the wafer and the supporting substrate, effectively preventing defects in the bonding pair, thereby ensuring subsequent processing;

[0075] (2) The resin introduced in the present invention is essentially a non-polar material, which can make the formed bonding layer highly hydrophobic and can avoid the invasion of highly polar solvents and strong acids and bases, thereby improving the ability of the temporary bonding material to resist strong acids, strong bases and chemical reagents;

[0076] (3) The bonding layer formed by the temporary bonding material provided by the present invention has high hardness at room temperature and can provide sufficient supporting force to ensure that the bonding pair will not break during subsequent processing;

[0077] (4) The adhesive layer formed by the temporary bonding material provided by the present invention is easy to clean, and less particulate impurities remain on the wafer surface after cleaning, thereby greatly improving the product yield. DETAILED DESCRIPTION

[0078] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0079] Unless otherwise specified, some raw material information involved in the following specific embodiments of the present invention is shown in Table 1 below. Other raw materials not shown are conventional materials in the art and can be purchased from commercial products.

[0080] Table 1

[0081]

[0082] Examples and Comparative Examples

[0083] This embodiment and comparative example respectively provide a temporary bonding material, and the raw materials and amounts thereof are shown in Table 2 and Table 3. In Table 2, the amount of each component is "kg", and the total amount is 10kg.

[0084] Table 2

[0085]

[0086] Table 3

[0087]

[0088]

[0089] The preparation method is:

[0090] Add the organic solvent and main resin into a stirring kettle equipped with a mechanical stirring and circulating water cooling system, start stirring, and stir at a speed of 200 rpm for 7 days; after the main resin is completely dissolved, add the tackifying resin, leveling agent and antioxidant while stirring, and stir evenly; observe the temperature changes in the kettle during this period. If the temperature rises too quickly, adjust the circulating cooling water temperature, control the temperature at 40°C, and stir for 12 hours; when the material in the kettle becomes clear and transparent, stop stirring, and filter the discharged material to obtain a temporary bonding material.

[0091] Performance Testing

[0092] The testing methods of the physicochemical properties involved in the above examples and comparative examples are as follows:

[0093] (1) Glue appearance and room temperature viscosity: visually inspect the appearance of the glue and use a Brookfield viscometer to measure the room temperature viscosity of the bonding glue;

[0094] (2) High temperature rheological viscosity: Anton Paar rheometer was used to measure the rheological viscosity of the rubber material;

[0095] The temporary bonding materials provided in the examples and comparative examples are applied in the following manner:

[0096] (Step 1) Place an 8-inch wafer on a spin coater, start the vacuum system, secure the wafer with a suction cup, and evenly pour 15 mL of temporary bonding material onto the wafer. Start spin coating at a speed of 1500 rpm for 45 seconds.

[0097] (Step 2) Close the vacuum chuck, remove the wafer coated with the temporary bonding material, bake it in a 150°C oven for 6 minutes, and then remove it to obtain the coated wafer;

[0098] (Step 3) Place the baked wafer adhesive surface and the SiC substrate on the surface of the wafer stage, evacuate, heat to 200°C, pressurize to 5kN, bond for 10 minutes, and cool to room temperature to complete the temporary bonding of the wafer (obtaining a bonded pair).

[0099] The following performance tests were conducted on the adhesive coated wafers and bonding pairs during the above preparation process:

[0100] (A) Film surface condition and TTV (thickness variation): The coating edge was observed under a microscope to check for wrinkles or adhesive defects. The film surface uniformity was measured using a Corning Flatmaster 200 flatness tester. The test sample was a coated wafer.

[0101] (B) Film hardness: Tested according to the test method provided in GB / T21838-2008 "Instrumented indentation test for hardness and material parameters of metallic materials", with the test sample being a coated wafer;

[0102] (C) Heat resistance: The mass loss of the film layer at 250°C for 1 hour was measured using a thermogravimetric analyzer. The test sample was a coated wafer.

[0103] (D) Film bonding strength: The equipment used for the bonding strength test is a universal material testing machine. During the test, the temporary bonding material sample is spin-coated on the bonding area of ​​the test piece (the size is 15mm×25mm). After drying, the bonding areas of the two test pieces are bonded together. After the film layer is cured, the overflowing adhesive layer is cut off, and then the test piece is placed in the fixture of the testing machine for tensile testing. When the test piece is broken by the testing machine, the maximum tensile force at the time of fracture is recorded (in N). The maximum tensile force divided by the area of ​​the bonding area of ​​the test piece is the bonding strength of the sample, which is expressed in N / mm. 2 .

[0104] (E) Bonding condition: Visual inspection and microscope observation. The test sample is the wafer after bonding. Observe whether there are snowflake-shaped bubbles on the wafer after bonding.

[0105] (F) Resistance to chemical corrosion: Immerse the bonding pair (temporarily bonded wafers) in a chemical solution (e.g., 65% concentrated nitric acid). After soaking for a period of time (e.g., 60°C, 2 hours), remove the wafers from the chemical solution, rinse them with clean water, and dry them. Visually inspect the edges of the temporarily bonded wafers for any dissolution or whitening. If dissolution or whitening is observed, it indicates visible corrosion. If no dissolution or whitening is observed, it indicates no visible corrosion. In addition, use a microscope to observe the depth of corrosion on the edges of the temporarily bonded wafers.

[0106] (G) Cleaning effect test: After hot sliding unloading at 200°C, the wafer was immersed in a cleaning agent for 2 minutes, and then cleaned by adding the cleaning agent dropwise while spin coating at 1000 rpm for 2 minutes. Finally, it was rinsed with isopropyl alcohol for 30 seconds to remove the residual cleaning agent and dried. The particle count on the wafer surface was scanned by AOI and the information was recorded.

[0107] The test results are shown in Table 4 and Table 5:

[0108] Table 4

[0109]

[0110] Table 5

[0111]

[0112]

[0113] It can be seen from the embodiments and performance tests that when the temporary bonding material provided by the present invention is used for wafer processing, the adhesive layer formed has uniform film thickness, reliable bonding, no bonding defects and good resistance to chemical solutions. After unloading, the adhesive film on the wafer surface can be easily cleaned by a cleaning agent without residue.

[0114] From the comparison between Example 1 and Examples 6-7, it can be seen that when the main resin of the present invention is selected as ethylene propylene rubber or polyisobutylene resin, and the tackifying resin is selected as hydrogenated C5 / C9 petroleum resin or hydrogenated DCPD petroleum resin, the performance of the bonding layer formed by the temporary bonding material can be improved and easier to clean.

[0115] However, the coating formed by the temporary bonding material provided in Comparative Example 1 has insufficient adhesion, which may cause the risk of wafer slippage during the grinding and polishing process, affecting the product yield; at the same time, the high temperature rheological viscosity requires an extremely high bonding process to complete wafer bonding, which consumes a lot of energy.

[0116] However, the coating formed by the temporary bonding material provided in Comparative Example 2 has poor heat resistance and low rheological viscosity, and the bonding has serious glue overflow, which will pollute the equipment and is not conducive to subsequent cleaning.

[0117] However, the coating formed by the temporary bonding material provided in Comparative Example 3 has poor heat resistance, and the system contains more polar resins, resulting in weak resistance of wafer bonding to chemical solutions, and more residual glue after cleaning, affecting product yield.

[0118] From the comparison between Example 1 and Comparative Example 4, it can be seen that when the main resin is not within the specified range of the present invention, the adhesive layer coating formed by the temporary bonding material will be difficult to clean, and particles will precipitate after the glue is stored for a period of time, and the product storage stability will be poor.

[0119] From the comparison between Example 1 and Comparative Example 5, it can be seen that when the selection of the tackifying resin is not within the specified range of the present invention, the bonding layer formed by the temporary bonding material will have poor heat resistance, and the wafer bonding will have weak resistance to chemical solutions. The number of particles after cleaning is large, affecting the product yield.

[0120] From the comparison between Example 1 and Comparative Examples 6-7, it can be seen that when the addition amount of the main resin is not within the specified range of the present invention, if the addition amount of the main resin is lower than that of the present invention, the content of small molecule resin in the system is too high, resulting in poor film-forming properties of the bonding layer and cracking of the film surface. At the same time, the high-temperature rheological viscosity is low, and the wafer bonding glue overflow is serious, which will pollute the equipment and be detrimental to subsequent cleaning; if the addition amount of the main resin is higher than that of the present invention, the high-temperature rheological viscosity of the bonding layer formed by the temporary bonding material is too high, and the wafer is difficult to bond, resulting in edge defects and weak resistance to chemical solutions of the wafer bonding, thereby affecting the overall quality of the product.

[0121] The applicant declares that the present invention is not limited to the above-described embodiments, and that the present invention is not necessarily implemented in accordance with the above-described embodiments. Persons skilled in the art should understand that any improvements to the present invention, equivalent substitutions for raw materials in the products of the present invention, additions of auxiliary ingredients, and selection of specific methods, etc., fall within the scope of protection and disclosure of the present invention.

Claims

1. A temporary bonding material, characterized in that: Calculated by mass percentage, it includes the following components:

2. The temporary bonding material according to claim 1, characterized in that The main resin is selected from any one of ethylene propylene rubber, polyisobutylene resin, styrene butadiene rubber, butadiene rubber or isoprene rubber, or a combination of at least two thereof, preferably ethylene propylene rubber and / or polyisobutylene resin.

3. The temporary bonding material according to claim 1 or 2, characterized in that The tackifying resin is selected from any one of terpene resin, hydrogenated C5 petroleum resin, hydrogenated C9 petroleum resin or hydrogenated DCPD petroleum resin, or a combination of at least two thereof.

4. The temporary bonding material according to any one of claims 1 to 3, characterized in that The organic solvent is selected from any one or a combination of at least two of p-menthane, limonene, dodecene, heptane, cyclohexane, ethylcyclohexane, mesitylene or decalin.

5. The temporary bonding material according to any one of claims 1 to 4, characterized in that: The antioxidant is selected from hindered phenol antioxidants and / or phosphite antioxidants.

6. The temporary bonding material according to any one of claims 1 to 5, characterized in that The leveling agent is selected from any one of silicone, acrylate or other leveling agents or a combination of at least two thereof.

7. A method for preparing a temporary bonding material according to any one of claims 1 to 6, characterized in that: The preparation method comprises: Mixing an organic solvent, a main resin, a tackifying resin, a leveling agent, and an antioxidant to obtain the temporary bonding material; Preferably, the mixing temperature is 25-40°C.

8. Use of the temporary bonding material according to any one of claims 1 to 6 in a wafer processing process, preferably in thin wafer backside processing or TSV through-hole etching in deep silicon.

9. Use of the temporary bonding material according to any one of claims 1 to 6 in wafer-level packaging, compound semiconductor processing or MEMS processing.

10. A method for using the temporary bonding material according to any one of claims 1 to 6, characterized in that: The method of use includes: placing the temporary bonding material between the support substrate and the wafer; heating the temporary bonding material to solidify it and form a bonding layer; After the wafer processing is completed, the support substrate is removed by heating; Chemical cleaning removes the remaining adhesive layer on the wafer surface; Preferably, the temperature for heating and removing the supporting substrate is 190-220°C.

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