Substrate holding apparatus, substrate processing apparatus, substrate holding method, substrate processing method, and article manufacturing method

Abstract

The present invention provides a substrate holding apparatus for holding a substrate, the substrate holding apparatus comprising: a chuck configured to support a substrate; a base pin configured to protrude from the chuck; and a controller configured to control exhaust of a space between the substrate and the chuck; wherein the controller is configured to control venting so as to perform a first venting operation of venting gas from the space at a first venting pressure, and perform a second venting operation of venting gas from the space at a second venting pressure, which is lower than the first venting pressure, after the first venting operation; and wherein the second exhaust operation is performed during a period from when the protrusion amount of the pin begins to decrease to when the chuck and the substrate come into contact with each other. The invention also provides a substrate processing apparatus, a substrate holding method, a substrate processing method, and an article manufacturing method.

Description

Technical Field

[0001] The present disclosure relates to a substrate holding apparatus, a substrate processing apparatus, a substrate holding method, a substrate processing method, and an article manufacturing method. Background Art

[0002] Manufacturing processes for semiconductor devices, liquid crystal displays, and the like utilize chucks that hold substrates through vacuum suction. When such chucks hold substrates, stress can act on the substrate, causing deformation depending on the strength of the vacuum. Japanese Patent Publication No. 2012-227554 discloses a method in which a support structure (chuck) on a substrate stage holds the substrate and then temporarily reduces the chuck's clamping force after a given period of time.

[0003] An apparatus including a chuck is used to improve throughput and reduce deformation of a substrate. The method disclosed in Japanese Patent Publication No. 2012-227554 is disadvantageous in terms of throughput. Summary of the Invention

[0004] For example, the present disclosure provides a technique that is advantageous in terms of deformation of a substrate and throughput in a process of causing a chuck to hold the substrate.

[0005] According to some embodiments, a substrate holding device for holding a substrate is provided, the substrate holding device including: a chuck configured to support a substrate; a pin configured to protrude from the chuck; and a controller configured to control exhaust of a space between the substrate and the chuck; wherein the controller is configured to control exhaust so as to perform a first exhaust operation of exhausting gas from the space at a first exhaust pressure, and to perform a second exhaust operation of exhausting gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation; and wherein the second exhaust operation is performed within a time period from when the protrusion amount of the pin begins to decrease to when the chuck and the substrate contact each other.

[0006] According to some embodiments, a substrate holding device for holding a substrate is provided, the substrate holding device including: a chuck configured to support the substrate; and a controller configured to control exhaust of a space between the substrate and the chuck; wherein the controller is configured to control the exhaust so as to perform a first exhaust operation of exhausting gas from the space at a first exhaust pressure, and to perform a second exhaust operation of exhausting gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation; and wherein the first exhaust operation is started when a peripheral portion of the substrate placed on the chuck is not in contact with the chuck, and the second exhaust operation is performed before the entire substrate is in contact with the chuck.

[0007] According to some embodiments, a substrate holding method for holding a substrate is provided, the substrate holding method comprising: performing a first exhaust operation of exhausting gas from a space between a substrate and a chuck configured to support the substrate at a first exhaust pressure; performing a second exhaust operation of exhausting gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, wherein the second exhaust operation is performed within a time period from when an amount of protrusion of a pin configured to protrude from the chuck begins to decrease to when the chuck and the substrate contact each other.

[0008] Further features of the present disclosure will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a schematic diagram illustrating an example of the arrangement of an exposure apparatus (substrate processing apparatus).

[0010] Figure 2 is a schematic diagram showing an example of the arrangement of a substrate conveyance system.

[0011] Figure 3 is a schematic diagram showing an example of arrangement of substrate holding units.

[0012] Figure 4 is a schematic diagram showing an example of arrangement of substrate holding units.

[0013] Figure 5A and Figure 5B is a schematic diagram showing an example of the arrangement of substrate chucks.

[0014] Figures 6A to 6C 1 and 2 are views for explaining a substrate holding process according to the first embodiment.

[0015] 7A to 7C 1 and 2 are views for explaining a substrate holding process according to the first embodiment.

[0016] Figure 8 : is a view showing an example of an exhaust operation in the substrate mounting process according to the first embodiment.

[0017] Figure 9 1 is a view showing a modification of the exhaust operation in the substrate mounting process according to the first embodiment.

[0018] Figure 10 : is a view showing an example of an exhaust operation in a substrate mounting process according to the second embodiment.

[0019] Figure 11 1 is a view showing a modification of the exhaust operation in the substrate mounting process according to the second embodiment.

[0020] Figure 12is a diagram showing monitoring results obtained by a pressure sensor during substrate mounting.

[0021] 13A to 13C 1 and 2 are views for explaining a substrate holding process according to the fourth embodiment.

[0022] Figure 14 : is a view showing an example of an exhaust operation in a substrate mounting process according to the fourth embodiment.

[0023] Figures 15A to 15C 1 and 2 are views for explaining a substrate holding process according to the fifth embodiment.

[0024] Figure 16 1 is a diagram illustrating an example of an exhaust operation in a substrate mounting process according to the fifth embodiment. DETAILED DESCRIPTION

[0025] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. While a plurality of features are described in the embodiments, the embodiments are not limited to using all such features, and a plurality of such features may be appropriately combined. In addition, in the accompanying drawings, the same reference numerals are given to the same or similar structures, and redundant descriptions thereof are omitted.

[0026] In the specification and drawings, directions will be indicated in an XYZ coordinate system, where the direction parallel to the surface of the chuck holding the substrate (substrate holding surface) is defined as the XY plane. Directions parallel to the X-axis, Y-axis, and Z-axis of the XYZ coordinate system are defined as the X-direction, Y-direction, and Z-direction, respectively. Rotation about the X-axis, rotation about the Y-axis, and rotation about the Z-axis are defined as θX, θY, and θZ, respectively. Control and drive (movement) about the X-axis, Y-axis, and Z-axis means control or drive (movement) about the direction parallel to the X-axis, the direction parallel to the Y-axis, and the direction parallel to the Z-axis, respectively. In addition, control or drive about the θX-axis, θY-axis, and θZ-axis means control or drive about rotation about an axis parallel to the X-axis, rotation about an axis parallel to the Y-axis, and rotation about an axis parallel to the Z-axis, respectively.

[0027] <First embodiment>

[0028] A substrate processing apparatus according to a first embodiment of the present disclosure will be described. This embodiment will exemplify an exposure apparatus, a type of photolithography apparatus used to manufacture semiconductor devices, liquid crystal display devices, and the like, as a substrate processing apparatus that processes a substrate. The exposure apparatus is an apparatus that performs an exposure process for transferring a pattern formed on an original plate onto a substrate by exposing the substrate using a step-and-repeat scheme or a step-and-scan scheme.

[0029] In this case, the substrate processing device according to the present disclosure is not limited to the exposure device, but can be other types of photolithography devices, such as an imprinting device or a drawing device. An imprinting device is a device that forms a pattern of a curable material, and the pattern on the mold is transferred to the curable material by bringing the imprinting material supplied to the substrate into contact with the mold and applying curing energy to the imprinting material. A drawing device is a device that forms a pattern (latent image pattern) on a substrate by drawing on the substrate with a charged particle beam (electron beam) or a laser beam. Alternatively, the substrate processing device according to the present disclosure can be a device other than a photolithography device, such as various types of high-precision processing devices and various types of high-precision measuring devices. A high-precision processing device is a device that performs processing of a processed substrate. A high-precision measuring device is a device that performs measurement processing of a measured substrate.

[0030] Figure 1 1 is a schematic diagram showing an example of the arrangement of an exposure apparatus 100 according to the present embodiment. The exposure apparatus 100 according to the embodiment may include a substrate holding unit 10 that holds a substrate S, a processor 20 that processes the substrate S, and a controller 30. The exposure apparatus 100 may further include an original plate transport system 40 that transports the original plate R to the processor 20, and a substrate transport system 50 that transports the substrate S to the substrate holding unit 10. Note that a reticle, a mask, or the like is used as the original plate R, and a wafer, a glass plate, or the like is used as the substrate S.

[0031] The substrate holding unit 10 may include a substrate chuck 11, a substrate stage 12, and pins 13. Note that the substrate holding unit 10 according to the present embodiment may be provided with three pins 13. This is not limited, and four or more pins 13 may be provided.

[0032] The substrate chuck 11 has a holding surface 11 a (substrate holding surface) that holds the substrate S, and an exhaust hole 11 b through which gas is exhausted from the space above the substrate chuck 11 to hold the substrate S by vacuum suction. In the following description, exhausting (drawing out, discharging) gas from the space above the substrate chuck 11 through the exhaust hole 11 b is sometimes simply referred to as "exhausting." The detailed arrangement of the substrate chuck 11 will be described later.

[0033] The substrate stage 12 consists of a fine movement stage 12a and a coarse movement stage 12b. The fine movement stage 12a is configured to support the substrate chuck 11 and is movable on the coarse movement stage 12b. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for driving the fine movement stage 12a translationally in the X, Y, and Z directions and rotationally in the θX, θY, and θZ directions. The coarse movement stage 12b is configured to move on the platen 14. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for driving the coarse movement stage 12b translationally in the X, Y, and Z directions and rotationally in the θX, θY, and θZ directions.

[0034] The pins 13 are used to transport the substrate S to the substrate holding unit 10 using the supply hand 51 (described later) and to retrieve the substrate S from the substrate holding unit 10 using the recovery hand 52 (described later). The pins 13 extend in the Z direction and are fixed to the coarse movement table 12 b. The pins 13 are configured to protrude from the holding surface 11 a of the substrate chuck 11 and hold the substrate S through vacuum suction. The amount of protrusion of the pins 13 from the holding surface 11 a of the substrate chuck 11 can be controlled by driving the substrate chuck 11 and the pins 13 relative to each other. This embodiment describes the case where the substrate chuck 11 and the pins 13 are relatively driven by driving the fine movement table 12 a supporting the substrate chuck 11 in the Z direction relative to the coarse movement table 12 b. However, this is not a limitation. For example, the substrate chuck 11 and the pins 13 can be relatively driven by driving the coarse movement table 12 b, to which the pins 13 are fixed, in the Z direction relative to the fine movement table 12 a.

[0035] In this case, the position of the substrate stage 12 (fine movement stage 12a) can be measured by a position measurement unit (not shown). The position measurement unit includes, for example, a laser interferometer. In this case, the position measurement unit can measure the position of the substrate stage 12 by illuminating the substrate stage 12 with light and determining the displacement of the substrate stage 12 based on the light reflected from the substrate stage 12. Note that the position measurement unit that measures the position of the substrate stage 12 can include an encoder instead of a laser interferometer. Furthermore, the relative position between the fine movement stage 12a and the coarse movement stage 12b is measured using, for example, a capacitive sensor. Based on the measurement results, the position of the coarse movement stage 12b is controlled so that it follows the position of the fine movement stage 12a. The pin 13 is fixed to the coarse movement stage 12b and thus moves along with the coarse movement stage 12b.

[0036] The processor 20 is a unit that forms a pattern on the substrate S held by the substrate holding unit 10. The processor 20 may include an irradiation optical system 21, a reticle stage 22, a projection optical system 23, and a detection unit 24.

[0037] The irradiation optical system 21 illuminates the original plate R held by the original plate stage 22 with light emitted from a light source (not shown). The original plate stage 22 may include an original plate chuck that holds the original plate R using vacuum suction, for example, and an original plate drive mechanism that drives the original plate R by driving the original plate chuck. The original plate drive mechanism can, for example, translate the original plate R in the X, Y, and Z directions, and rotationally drive the original plate R in the θX, θY, and θZ directions. The drive in each direction can be independently controlled. The projection optical system 23 projects an image of the pattern on the original plate R illuminated by the irradiation optical system 21 onto the substrate S held by the substrate holding unit 10. Furthermore, the detection unit 24 is, for example, an off-axis scope, and detects alignment marks provided on the substrate S.

[0038] In this case, the position of the reticle stage 22 can be measured by a position measuring unit (not shown). The position measuring unit has, for example, a laser interferometer (not shown). In this case, the position measuring unit can measure the position of the reticle stage 22 by irradiating the reticle stage 22 with light and obtaining the displacement of the reticle stage 22 based on the light reflected by the reticle stage 22. Note that the position measuring unit of the reticle stage 22 can have an encoder instead of the laser interferometer.

[0039] The controller 30 is formed of a computer (information processing device) including a processor such as a central processing unit (CPU) and memory. The controller 30 comprehensively controls the exposure process by controlling each unit of the exposure apparatus 100. The controller 30 may be composed of a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose computer with an embedded program, or a combination of all or part of these components.

[0040] In addition, the controller 30 according to this embodiment includes an instruction unit 31, a memory unit 32, and an information processor 33. The instruction unit 31 controls each unit of the exposure device 100. The memory unit 32 stores various types of information and data. The information processor 33 calculates the drive target positions of the substrate stage 12 and the reticle stage 22, and executes the exposure sequence and / or supply / recovery sequence of the substrate S recorded in the storage unit 32 in a predetermined order. Note that this embodiment has been described as an example in which the controller 30 includes the memory unit 32 and the information processor 33. However, the memory unit 32 and the information processor 33 may be provided separately from the controller 30.

[0041] The original plate conveying system 40 may include an original plate hand 41 , an original plate pre-alignment stage 42 , an original plate conveying robot 43 , and a storage unit 44 .

[0042] The original plate transport robot 43 is an articulated robot. It includes a hand that holds the original plate R and can move this hand to any position in the XYZ space. The storage unit 44 is a base for storing the original plate R. Original plates R transported from outside the apparatus are placed on the storage unit 44. The original plate transport robot 43, being an articulated robot, places the original plate R placed on the storage unit 44 onto the original plate pre-alignment stage 42.

[0043] The positional relationship between the original plate R and the original plate pre-alignment stage 42 is measured by observing the markings on the original plate R on the original plate pre-alignment stage 42 using a microscope (scope). After measurement, the original plate hand 41 holds the original plate R on the original plate pre-alignment stage 42 and moves to a position where the original plate R is transferred to the original plate stage 22. The original plate hand 41 transfers (transports) the original plate R to the original plate stage 22 by moving in the -Z direction. The original plate stage 22 holds the original plate R by vacuum suction. Misalignment of the original plate R relative to the original plate pre-alignment stage 42 in the X, Y, and Z directions can be corrected based on the position at which the original plate hand 41 transfers the original plate R to the original plate stage 22.

[0044] The substrate conveying system 50 may include a supply hand 51 (conveying hand), a recovery hand 52 , a pre-alignment unit 53 , a conveying robot 54 , a temporary base 55 , and a storage unit 56 . Figure 2 is a schematic diagram showing an example of the arrangement of the substrate conveyance system 50 .

[0045] The substrate S is stored in the storage unit 56. The transfer robot 54 is an articulated robot. The transfer robot 54 includes a hand that holds the substrate S and can move the hand to any position in the XYZ space. The transfer robot 54 retrieves the substrate S from the storage unit 56 and places the substrate S on the pre-alignment unit 53. The pre-alignment unit 53 measures the outer shape position of the substrate S relative to the pre-alignment unit 53 by irradiating the peripheral portion of the substrate S with measurement light and measuring the light reflected from the peripheral portion with a sensor.

[0046] The supply hand 51 is a conveying mechanism for transferring (conveying) the substrate S from the pre-alignment unit 53 to the substrate holding unit 10. The supply hand 51 receives the substrate S from the pre-alignment unit 53, holds the substrate S by vacuum suction, and transfers (conveys) the substrate S to the pins 13 protruding from the holding surface 11 a of the substrate chuck 11 at the substrate holding unit 10.

[0047] The recovery hand 52 is a transport mechanism for transferring (conveying) a substrate S from the substrate holding unit 10 to a temporary pedestal 55. The recovery hand 52 receives the substrate S from the pins 13 protruding from the holding surface 11 a of the substrate chuck 11 at the substrate holding unit 10, holds the substrate S through vacuum suction, and transfers (conveys) the substrate S to the temporary pedestal 55. The temporary pedestal 55 is a pedestal on which the recovery hand 52 temporarily places the substrate S retrieved from the substrate holding unit 10. The transport robot 54 holds the substrate S placed on the temporary pedestal 55 by the recovery hand 52 and transports the substrate S to a storage unit 56.

[0048] Next, we will describe the arrangement of the substrate holding unit 10 and the substrate holding process (substrate holding method) in which the substrate chuck 11 holds the substrate S. In this case, the substrate holding unit 10 (at least the substrate chuck 11 and the pins 13) and the controller 30 constitute a substrate holding device that holds the substrate S. The substrate processing method for processing a substrate using the exposure apparatus 100 (substrate processing apparatus) includes a holding step in which the substrate chuck 11 holds the substrate S using the substrate holding method described below, and a processing step in which the processor 20 processes the substrate S held by the substrate chuck 11 during the holding step.

[0049] Figure 3 is a schematic diagram illustrating an example arrangement of the substrate holding unit 10. The substrate chuck 11 is configured to hold the substrate S by vacuum suction. More specifically, the substrate chuck 11 is configured to hold the substrate S by exhausting gas from the space above the substrate chuck 11 (i.e., the space between the substrate chuck 11 and the substrate S placed on the pins 13 protruding from the holding surface 11a). The substrate chuck 11 is provided with exhaust holes 11b for exhausting gas from the space above the substrate chuck. A pipe 61 is connected to each exhaust hole 11b. The fine movement stage 12a holds the substrate chuck 11 by vacuum suction. The fine movement stage 12a is placed on the coarse movement stage 12b. The coarse movement stage 12b is internally provided with a pressure sensor 62, a first exhaust system 63a, and a second exhaust system 63b. The first exhaust system 63a includes a solenoid valve 64a and a controller 65a. The second exhaust system 63b includes a solenoid valve 64b and a controller 65b.

[0050] The pipe 61 is connected to a vacuum pump P, which serves as a negative pressure generator. The vacuum pump P is located outside the coarse motion stage 12 b and can be configured as factory equipment, for example. A pressure sensor 62 monitors (detects) the internal pressure of the pipe 61. The pressure sensor 62 is positioned between the portion of the pipe 61 where it branches to the respective exhaust holes 11 b of the substrate chuck 11 and the solenoid valves 64 a and 64 b of the exhaust systems 63 a and 63 b to detect the internal pressure of the pipe 61. The pressure sensor 62 can be understood as a sensor that detects the pressure in the space above the substrate chuck 11.

[0051] A first exhaust system 63a (solenoid valve 64a and controller 65a) and a second exhaust system 63b (solenoid valve 64b and controller 65b) are arranged in parallel on the pipe 61 between the vacuum pump P and the substrate chuck 11 (exhaust hole 11b). In the first exhaust system 63a, the controller 65a is a mechanism for controlling the internal pressure of the pipe 61 to a desired vacuum pressure (exhaust pressure) and is configured to arbitrarily set (change) the desired vacuum pressure. The solenoid valve 64a is located closer to the substrate chuck 11 than the controller 65a and is controlled by the controller 30. The solenoid valve 64a is controlled to open or close to switch whether the vacuum pressure controlled by the controller 65a is supplied to the substrate chuck 11 (exhaust hole 11b). More specifically, when the solenoid valve 64a is turned on, the vacuum pressure controlled by the controller 65a is supplied to the substrate chuck 11 (exhaust hole 11b). In contrast, when the solenoid valve 64a is turned off, the vacuum pressure controlled by the controller 65a is not supplied to the substrate chuck 11 (exhaust hole 11b). The arrangement of the solenoid valve 64b and the controller 65b in the second exhaust system 63b is the same as that in the first exhaust system 63a.

[0052] In the first exhaust system 63a and the second exhaust system 63b, the controllers 65a and 65b can control the internal pressure to the same or different vacuum pressures. For example, the controller 65b of the second exhaust system 63b can control the internal pressure to a vacuum pressure lower than the vacuum pressure to which the controller 65a of the first exhaust system 63a controls the internal pressure. In other words, the second exhaust system 63b can be configured (set) so that the exhaust performance through the exhaust hole 11b is lower than the exhaust performance through the first exhaust system 63a.

[0053] in this case, Figure 3 The substrate holding unit 10 in FIG. 1 is configured such that the first exhaust system 63 a and the second exhaust system 63 b are connected to the substrate chuck 11 via a common pipe 61 (single-system pipe arrangement). However, this is not limited to this. For example, Figure 4 As shown in , the substrate holding unit 10 may be configured such that the first exhaust system 63a and the second exhaust system 63b are connected to the substrate chuck 11 via different pipes 61a and 61b (dual-system pipe arrangement). More specifically, in Figure 4 In the substrate holding unit 10, a first exhaust system 63a including a solenoid valve 64a and a controller 65a is placed on a pipe 61a, and a second exhaust system 63b including a solenoid valve 64b and a controller 65b is placed on a pipe 61b. The pipes 61a and 61b are connected to a vacuum pump P. A pressure sensor 62a monitors (detects) the internal pressure of the pipe 61a. A pressure sensor 62b monitors (detects) the internal pressure of the pipe 61b.

[0054] exist Figure 3 and Figure 4 In the arrangement of , when the solenoid valve 64b is turned off and the solenoid valve 64a is turned on, only the vacuum pressure controlled by the controller 65a of the first exhaust system 63a is supplied to the substrate chuck 11 (exhaust hole 11b) via the pipe 61 (61a). Conversely, when the solenoid valve 64b is turned on and the solenoid valve 64a is turned off, only the vacuum pressure controlled by the controller 65b of the second exhaust system 63b is supplied to the substrate chuck 11 (exhaust hole 11b) via the pipe 61 (61b). That is, according to Figure 3 and Figure 4 In the arrangement, simply turning on / off the solenoid valves 64a and 64b can quickly (at high speed) switch the exhaust pressure when exhaust is performed through the exhaust hole 11b.

[0055] Figure 3 and Figure 4 An arrangement including two exhaust systems 63a and 63b is shown. However, the present disclosure is not limited to this, and an arrangement including three or more exhaust systems may be provided. In addition, each exhaust system is composed of a combination of a solenoid valve and a controller. However, the present disclosure is not limited to this, and a servo valve whose opening can be arbitrarily set may be used, or a proportional solenoid valve that can be controlled in proportion to the current may be used. Obviously, a combination thereof may be used. For example, one of the multiple exhaust systems may have an arrangement using a combination of a solenoid valve and a controller, while another exhaust system may have an arrangement using a servo valve or a proportional solenoid valve. Combining these elements can increase the degree of freedom in setting the vacuum pressure (exhaust pressure).

[0056] Figure 5A and Figure 5B is a schematic diagram showing an example of the arrangement of the substrate chuck 11 . Figure 5A A view of the substrate chuck 11 viewed from the +Z direction is shown. Figure 5B It is along Figure 5A AA is a cross-sectional view of the substrate chuck 11.

[0057] The substrate chuck 11 has an exhaust hole 11b through which gas is exhausted from the space on the substrate chuck 11 to hold the substrate S by vacuum suction, and an opening 11c through which the pins 13 protrude. Figure 5A and Figure 5B In the case shown in FIG, 12 exhaust holes 11b are arranged along the periphery. However, the number and placement of the exhaust holes 11b are not limited to Figure 5A and Figure 5B The number and placement of openings 11c are not limited to those shown in Figure 5A and Figure 5B Rather than the example in FIG, it can also be appropriately set according to the number and placement of the pins 13.

[0058] The substrate chuck 11 is provided with a sealing portion 11e and a plurality of support pins 11d. The support pins 11d are protrusions for supporting the substrate S, and the substrate S is placed on the upper surfaces of the support pins 11d. The upper surfaces of the support pins 11d can be understood as the holding surface 11a of the substrate chuck 11. The sealing portion 11e is a member that maintains a vacuum pressure between the substrate S and the substrate chuck 11 by reducing the intrusion of external gas (atmospheric air) when the substrate S is placed on the support pins 11d (i.e., when the substrate S is held by the substrate chuck 11). The sealing portion 11e is formed in an annular shape along the periphery of the substrate S placed on the support pins 11d and is configured so that the upper surface of the sealing portion 11e is lower than the upper surface of the support pins 11d. Note that the substrate chuck 11 can be configured without the sealing portion 11e or with multiple sealing portions 11e. That is, the presence / absence, number, and placement of the sealing portion 11e are not limited to Figure 5A and Figure 5B Those in the examples shown in .

[0059] When the substrate chuck 11 having the above-described arrangement holds the substrate S, the first exhaust system 63a or the second exhaust system 63b performs exhaust through the exhaust holes 11b to form a vacuum between the plurality of support pins 11d. This enables the substrate chuck 11 to hold the substrate S with uniform force over the entire substrate S. In addition, the sealing portion 11e can reduce the intrusion of gas from the outside into the space between the substrate S and the substrate chuck 11. The vacuum pressure between the substrate S and the substrate chuck 11 can be maintained. Note that since the upper surfaces of the plurality of support pins 11d are higher than the upper surface of the sealing portion 11e, the sealing portion 11e and the substrate S do not contact each other when the substrate S is held by the substrate chuck 11.

[0060] Figures 6A to 6C 1 is a diagram for explaining a substrate holding process in which the substrate chuck 11 holds the substrate S. The substrate holding process includes a substrate mounting process (substrate mounting step) of mounting the substrate S on the substrate chuck 11 by placing the substrate S on the pins 13 protruding from the holding surface 11 a of the substrate chuck 11 and then reducing the protrusion amount of the pins 13 from the holding surface 11 a. Figures 6A to 6C The substrate mounting process is shown in chronological order. Note that the controller 30 may control the substrate holding process.

[0061] In this case, the pin 13 has an exhaust hole at its distal end. The exhaust hole is connected to the vacuum pump P via a pipe 71. A solenoid valve 74 and a controller 75 are arranged on the pipe 71 between the vacuum pump P and the pin 13. The controller 75 is configured to be able to control the internal pressure to a desired vacuum pressure. The solenoid valve 74 is placed closer to the pin 13 than the controller 75. The controller 30 performs an open / close control to switch whether the vacuum pressure controlled by the controller 75 is supplied to the pin 13. When the solenoid valve 74 is turned on, the vacuum pressure controlled by the controller 75 is supplied to the pin 13. In contrast, when the solenoid valve 74 is turned off, the vacuum pressure controlled by the controller 75 is not supplied to the pin 13. In addition, a pressure sensor 72 that monitors (detects) the internal pressure of the pipe 71 is provided to monitor the pressure between the pin 13 and the substrate S. The pressure sensor 72 is placed to detect the internal pressure of the pipe 71 that is positioned closer to the pin 13 than the solenoid valve 74. Reference Figures 6A to 6C The pressure sensor 72, the electromagnetic valve 74, and the controller 75 are arranged outside the coarse movement stage 12b. However, this is not limited to these components. These components may be arranged inside the coarse movement stage 12b.

[0062] Figure 6A The figure shows a state where the pins 13 protrude from the holding surface 11a of the substrate chuck 11 when the fine movement stage 12a is driven in the -Z direction. When the substrate S is placed (transported) on the pins 13 by the substrate transport system 50, the controller 30 turns on the solenoid valve 74 to cause the pins 13 to hold the substrate S. The controller 30 drives the fine movement stage 12a in the +Z direction to reduce the amount of protrusion of the pins 13 from the holding surface 11a.

[0063] Figures 6A to 6C FIG. 1 shows a state in which the protrusion amount of the pin 13 from the holding surface 11 a is reduced by driving the fine movement stage 12 a in the +Z direction. Figure 6B As shown in FIG, as the fine movement stage 12a is driven in the +Z direction, the upper surface of the pin 13 becomes flush with the holding surface 11a of the substrate chuck 11, and the substrate S and the substrate chuck 11 begin to contact each other. At this time, the controller 30 turns off the electromagnetic valve 74 to release the pin 13 from holding the substrate S. Figure 6CAs shown in , as the fine movement stage 12a is further driven in the +Z direction, the height of the upper surface of the pins 13 becomes lower than the holding surface 11a of the substrate chuck 11, and the pins 13 are stored in the substrate chuck 11. This makes it possible to mount the substrate S on the holding surface 11a of the substrate chuck 11. In this case, the fine movement stage 12a can move in the Z direction while tilting according to the positional relationship with the three pins 13 in the Z direction. The pins 13 are fixed to the coarse movement stage 12b, which can move in the X and Y directions. The relative position between the fine movement stage 12a and the coarse movement stage 12b in the Z direction, that is, the amount of protrusion of the pins 13 from the holding surface 11a, can be measured by a sensor such as an interferometer, an electrostatic capacitance sensor, or an encoder.

[0064] Figures 6A to 6C FIG. 1 shows a case where the substrate S is mounted on the substrate chuck 11 by driving the fine movement stage 12a relative to the coarse movement stage 12b. The substrate S can be mounted on the substrate chuck 11 simply by changing the relative position of the substrate chuck 11 and the pins 13 in the Z direction. For example, 7A to 7C As shown in , the present disclosure can use an arrangement in which the pins 13 (the entirety or distal end portions thereof) are driven in the Z direction relative to the substrate chuck 11 (the fine movement stage 12 a ). 7A to 7C An example of a substrate mounting process performed by driving the pins 13 in the -Z direction relative to the substrate chuck 11 is shown in chronological order. The relative position of the substrate chuck 11 and the pins 13 in the Z direction is changed by a drive mechanism that drives the substrate chuck 11 and the pins 13 relative to each other in the Z direction. Note that in the following description, the distal end of the drive pin 13 relative to the substrate chuck 11 will sometimes be referred to as the "drive pin 13."

[0065] Figure 7A The state in which the pin 13 protrudes from the holding surface 11a of the substrate chuck 11 when the pin 13 is driven in the +Z direction is shown. When the substrate S is placed (transported) on the pin 13 by the substrate transport system 50, the controller 30 turns on the solenoid valve 74 so that the pin 13 holds the substrate S. The controller 30 reduces the protrusion amount of the pin 13 from the holding surface 11a by driving the pin 13 in the -Z direction. As the pin 13 is driven in the -Z direction, the upper surface of the pin 13 becomes flush with the holding surface 11a of the substrate chuck 11, and the substrate S comes into contact with the substrate chuck 11, as shown in FIG. Figure 7B At this time, the controller 30 turns off the electromagnetic valve 74 to release the pin 13 from holding the substrate S. As the pin 13 is further driven in the -Z direction, the height of the upper surface of the pin 13 becomes lower than the holding surface 11a of the substrate chuck 11, and the pin 13 is stored in the substrate chuck 11, as shown in FIG. Figure 7C This makes it possible to mount the substrate S on the holding surface 11a of the substrate chuck 11. Although 7A to 7C Although the example in which the distal end of the pin 13 is driven in the -Z direction is shown, the entire pin 13 may be driven in the -Z direction. Furthermore, the drive mechanism for driving each pin 13 may be provided on the pin 13 itself, or may be provided outside the pin 13 (for example, on the coarse movement stage 12 b).

[0066] During substrate mounting, while minimizing the protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11, the higher the relative speed between the substrate chuck 11 and the pins 13 in the Z direction, the better the throughput (productivity) of the exposure apparatus 100. However, as the relative speed between the substrate chuck 11 and the pins 13 in the Z direction increases, the gap between the holding surface 11a of the substrate chuck 11 and the substrate S decreases, and the atmospheric pressure in the space between the holding surface 11a and the substrate S increases. In this case, the wind pressure on the substrate S increases due to the increased atmospheric pressure in the space, causing the substrate S to slip (displace) on the pins 13. If the substrate S slips on the pins, it may fall off the pins 13 or the pins 13 may wear out. When the substrate S is mounted on the substrate chuck 11, the multiple support pins 11d on the substrate chuck 11 may wear out. To this end, during the period (interval) from when the protrusion amount of the pins 13 from the holding surface 11 a starts to decrease to when the holding surface 11 a and the substrate S start to contact each other, exhaust can be performed through the exhaust holes 11 b of the substrate chuck 11. At this time, it is preferable to set the exhaust pressure so as to reduce the side slip of the substrate S on the pins 13.

[0067] In contrast, if exhaust is performed through the exhaust holes 11b at an exhaust pressure that can reduce the sideways slippage of the substrate S on the pins 13, deformation occurs in the substrate S when the holding surface 11a of the substrate chuck 11 comes into contact with the substrate S. In other words, the substrate S is held by the substrate chuck 11 while deformation occurs. Furthermore, a large frictional force is generated on the contact surface between the holding surface 11a and the substrate S. This may cause friction on the substrate chuck 11. Therefore, it is preferable to reduce the exhaust pressure when the holding surface 11a of the substrate chuck 11 comes into contact with the substrate S.

[0068] Therefore, the substrate mounting process according to this embodiment includes a first exhaust operation and a second exhaust operation, which is performed after the first exhaust operation. The first exhaust operation is an exhaust operation in which gas is exhausted from the space above the substrate chuck 11 through the exhaust holes 11b at a first exhaust pressure setting (first exhaust pressure). The second exhaust operation is an exhaust operation in which gas is exhausted from the space above the substrate chuck 11 through the exhaust holes 11b at a second exhaust pressure setting (second exhaust pressure) that is lower than the first setting. The switch from the first exhaust operation to the second exhaust operation is performed between the time when the protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 begins to decrease and the time when the holding surface 11a and the substrate S come into contact with each other. This makes it possible to simultaneously achieve reduced deformation of the substrate S while the substrate S is held on the substrate chuck 11 and increased production throughput.

[0069] The substrate mounting process includes a state where a gap exists between the substrate chuck 11 and the substrate S, and a state where the substrate chuck 11 and the substrate S are in contact. In this embodiment, the switch from the first exhaust operation to the second exhaust operation is performed at or before the substrate chuck 11 and the substrate S come into contact with each other. Furthermore, the exhaust pressure is the pressure at which gas is exhausted (drawn) from the space above the substrate chuck 11 through the exhaust holes 11b and can be understood as the flow rate or flow velocity of gas exhausted from the space through the exhaust holes 11b. The exhaust pressure is determined by the value (flow rate or flow velocity) set by the controller 65a of the first exhaust system 63a and the controller 65b of the second exhaust system 63b.

[0070] Figure 8 An example of the first exhaust operation and the second exhaust operation during the substrate installation process is shown. Figure 8 The Z-direction position of the fine-motion stage 12a is represented by the abscissa, and the exhaust pressure is represented by the ordinate. Figure 8 , the “Z direction position of the fine movement stage 12 a ” represented by the abscissa can be understood as the position of the holding surface 11 a of the substrate chuck 11 in the Z direction. Figure 8 The abscissa in φ may be understood as the protrusion amount of the pin 13 from the holding surface 11 a of the substrate chuck 11 in the Z direction, or the gap between the holding surface 11 a and the substrate S.

[0071] During the substrate mounting process, a first exhaust operation begins when the fine movement stage 12a begins driving in the +Z direction (i.e., when the protrusion of the pins 13 from the holding surface 11a is reduced). In this first exhaust operation, exhaust is performed at a first exhaust pressure setting to reduce side slippage of the substrate S on the pins 13 caused by the wind pressure generated when the fine movement stage 12a moves at high speed. The first setting is set to a value that allows the side slippage (displacement) of the substrate S on the pins 13 to fall within an allowable range from the time the protrusion of the pins 13 begins to decrease to the time the holding surface 11a of the substrate chuck 11 and the substrate S come into contact with each other. This reduces side slippage of the substrate S on the pins 13.

[0072] The exhaust volume during the first exhaust operation (the flow rate of gas exhausted through the exhaust holes 11b) is preferably equal to or greater than the flow rate of gas expelled from the space above the substrate chuck 11 when the fine movement stage 12a is driven in the +Z direction (hereinafter sometimes referred to as the gas extrusion volume). However, note that depending on the placement of the piping system in the equipment, it may be difficult to make the exhaust volume during the first exhaust operation equal to or greater than the gas extrusion volume. In this case, it is preferable to set the exhaust volume during the first exhaust operation in consideration of the holding of the substrate S by the pins 13. For example, because the substrate S is sucked by the pins 13 through vacuum, as long as the exhaust volume during the first exhaust operation is equal to or greater than the value obtained by subtracting the vacuum suction volume of the substrate S by the pins 13 from the gas extrusion volume, the substrate S can be prevented from slipping on the pins 13.

[0073] At the moment when the Z-direction position of the fine-motion stage 12a reaches the first position, the second exhaust operation is started. That is, at this moment, the first exhaust operation is switched to the second exhaust operation. In the second exhaust operation, exhaust is performed with a second exhaust pressure setting value that is less than the first setting value to reduce the deformation of the substrate S caused by the substrate chuck 11 holding the substrate S. The second setting value is set to a value that can make the deformation of the substrate S caused by the substrate chuck 11 holding the substrate S fall within the allowable range. This makes it possible to reduce the deformation of the substrate S caused by the substrate chuck 11 holding the substrate S. In addition, providing the second exhaust operation makes it possible to reduce the friction between the holding surface 11a of the substrate chuck 11 and the substrate S and reduce the wear of the substrate chuck 11.

[0074] The first position is defined as the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S come into contact with each other, or a position closer to the -Z-direction side than such a Z-direction position. This position is obtained in advance through experiments, simulations, etc., and is stored in the controller 30 (memory unit 32). Figure 8 In the case of , the first position is defined as the Z-direction position of the fine movement stage 12 a when the holding surface 11 a and the substrate S come into contact with each other.

[0075] in this case, Figure 8 The case where the fine-motion stage 12a is driven in the +Z direction during substrate mounting is shown. However, the same operation is performed when the pin 13 is driven in the -Z direction. Since the case of driving the fine-motion stage 12a is opposite to the case of driving the pin 13 only in the driving direction, the -Z direction can be used instead of the -Z direction. Figure 8 The +Z direction in Figure 8 The operation in applies to the latter case. The drawings and description given below indicate the case of driving the micro-stage 12a. However, when the pin 13 is to be driven, the above operation can be applied when the -Z direction is used instead of the +Z direction. In this case, Figure 8 In the description and drawings to be described later, the driving of the fine movement stage 12 a may be regarded as the movement of the substrate chuck 11 and may be replaced by the driving of the pins 13 or the relative driving between the fine movement stage 12 a and the pins 13 .

[0076] The exhaust pressure through the exhaust holes 11b can be determined based on the speed of the fine movement stage 12a, the suction and holding force of the pins 13 on the substrate S, and / or the characteristics of the substrate S. The speed of the fine movement stage 12a tends to increase in consideration of production volume. When the fine movement stage 12a is to be driven at high speed, a high exhaust pressure can be set in the first exhaust operation. The suction and holding force of the pins 13 is based on vacuum pressure, which the pins 13 utilize to hold the substrate S through vacuum suction. If the vacuum pressure is low, the substrate S may slip on the pins 13 due to the wind pressure generated during the driving of the fine movement stage 12a. Therefore, it is preferable to set a high exhaust pressure in the first exhaust operation. The characteristics of the substrate S include the amount of warpage, the roughness of the back surface, and the type, material, and / or thickness of the film. The exhaust pressure in the second exhaust operation can be appropriately set based on the characteristics of the substrate S. If warpage has already occurred in the substrate S, a high exhaust pressure can be set in the second exhaust operation. Note that the exhaust pressure in the second exhaust operation can also be set based on the characteristics of the substrate chuck 11. The characteristics of the substrate chuck 11 may include the uniformity of the height of the plurality of support pins 11 d and / or the presence / absence of a sealing portion 11 e. For example, if the holding surface 11 a of the substrate chuck 11 is not provided with a sealing portion 11 e, it is preferable to set a high exhaust pressure in the second exhaust operation due to the increase in atmospheric air flowing in from the surrounding environment.

[0077] The substrate mounting process according to this embodiment has been described as switching from the first exhaust operation to the second exhaust operation while the fine movement stage 12a is moving. However, this is not a limitation. For example, the first exhaust operation can be performed while the fine movement stage 12a is moving. The movement of the fine movement stage 12a can be temporarily stopped when its Z-direction position reaches the first position, and the first exhaust operation can be switched to the second exhaust operation in this state. In other words, the switch from the first exhaust operation to the second exhaust operation can be performed while temporarily stopping the reduction in the protrusion of the pin 13 from the holding surface 11a of the substrate chuck 11. During the substrate mounting process, the movement speed of the fine movement stage 12a can be freely changed or its movement can be temporarily stopped. The movement of the fine movement stage 12a can be temporarily stopped before the holding surface 11a of the substrate chuck 11 and the substrate S come into contact with each other. By performing this temporary stop before the substrate chuck 11 and the substrate S come into contact with each other, deformation of the substrate S caused by the substrate chuck 11 holding the substrate S can be more reliably reduced.

[0078] Note that the movement speed and movement mode of the fine-motion stage 12a can be freely set. Whether a temporary stop is performed or not, the side slip of the substrate S on the pin 13 can be reduced, and the deformation of the substrate S caused when the substrate chuck 11 and the substrate S begin to contact each other can be reduced. In addition, in this embodiment, the exhaust pressure is switched in two steps: a first exhaust operation and a second exhaust operation. However, the number of steps for switching the exhaust pressure is not limited to two, but can be three or more. Moreover, this embodiment describes an example of a stepwise (discrete) change in the exhaust pressure. However, the exhaust pressure can also change continuously. That is, the exhaust pressure can gradually change from a first exhaust pressure (first set value) to a second exhaust pressure (second set value). The continuous change of the exhaust pressure can be performed, for example, based on a predetermined chart or table indicating the relationship between the exhaust pressure and time, or based on a specific function.

[0079] Next, a method for switching from the first exhaust operation to the second exhaust operation during substrate installation will be described. Figure 3 and 4 As described above, the substrate holding apparatus according to the present embodiment is provided with the first exhaust system 63a including the electromagnetic valve 64a and the controller 65a and the second exhaust system 63b including the electromagnetic valve 64b and the controller 65b.

[0080] For example, the first exhaust operation is performed while both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b are open. Then, when the Z-direction position of the fine motion table 12a reaches the first position, the second exhaust operation is performed while the solenoid valve 64b of the second exhaust system 63b is shut off and the solenoid valve 64a of the first exhaust system 63a is closed. Alternatively, the second exhaust operation is performed while the solenoid valve 64a of the first exhaust system 63a is shut off and only the solenoid valve 64b of the second exhaust system 63b is closed. This allows the exhaust pressure set point (second set point) in the second exhaust operation to be reduced to a value lower than the exhaust pressure set point (first set point) in the first exhaust operation. As described above, shutting off one of the two open solenoid valves 64a and 64b in this manner allows for a smooth transition from the first exhaust operation to the second exhaust operation.

[0081] The vacuum pressure in each controller 65a and 65b is set based on the first and second set values. For example, if the second exhaust pressure set value is reduced to approximately half the first exhaust pressure set value, the exhaust pressure in each controller 65a and 65b can be set to the same value, or the setting can be made taking into account the length of the pipe 61. If the length of the pipe 61 is taken into account, the vacuum pressure in each controller 65a and 65b is set by comparing the exhaust pressure set when the solenoid valves 64a and 64b are turned on with the exhaust pressure set when the solenoid valve 64a is turned on and the solenoid valve 64b is turned off. In this way, the first and second set values ​​can be determined based on the exhaust pressure required for each exhaust operation.

[0082] Furthermore, if the vacuum pressure controlled by the controller 65b of the second exhaust system 63b is lower than the vacuum pressure controlled by the controller 65a of the first exhaust system 63a, the exhaust system used for the first exhaust operation and the exhaust system used for the second exhaust operation can be switched. More specifically, the first exhaust operation is performed while the solenoid valve 64a of the first exhaust system 63a is open and the solenoid valve 64b of the second exhaust system 63b is closed. In other words, the first exhaust operation is performed using only the first exhaust system 63a. When the Z-direction position of the fine movement stage 12a reaches the first position, the second exhaust operation is performed while the solenoid valve 64a of the first exhaust system 63a is closed and the solenoid valve 64b of the second exhaust system 63b is opened. In other words, the second exhaust operation is performed using only the second exhaust system 63b.

[0083] As described above, the exhaust pressure is set by combining the solenoid valves 64a and 64b and the controllers 65a and 65b. However, this also applies to the case where a servo valve and a proportional solenoid valve are used instead of the above components. The servo valve and the proportional solenoid valve allow the opening to be set arbitrarily, thus simplifying the components of the equipment by reducing the number of piping systems. In addition, Figure 3 The arrangement in FIG can use a servo valve instead of the electromagnetic valve 64 b and the controller 65 b. In this case, the opening of the servo valve can be advantageously changed according to the characteristics of the substrate S (such as the amount of warpage of the substrate S).

[0084] As described above, in the substrate holding process (substrate mounting process) according to this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 begins to decrease to when the holding surface 11a and the substrate S come into contact with each other. Because the first exhaust operation reduces side slippage of the substrate S on the pins 13, the substrate mounting process can be performed without reducing the rate of reduction in the protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11. This can be advantageous in terms of throughput. The second exhaust operation can then reduce deformation of the substrate S caused by contact with the holding surface 11a of the substrate chuck 11. Furthermore, the first exhaust operation is switched to the second exhaust operation at or before the holding surface 11a and the substrate S come into contact with each other. This can be advantageous in terms of throughput. In other words, the substrate mounting process according to this embodiment is advantageous in terms of both substrate S deformation prevention and throughput during the substrate holding process.

[0085] [Variation]

[0086] In the above Figure 8 In the case of FIG, the first position is the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S come into contact with each other. Note, however, that the first position may be the Z-direction position of the fine movement stage 12a before the holding surface 11a and the substrate S come into contact with each other (for example, immediately before the holding surface 11a and the substrate S come into contact with each other).

[0087] Figure 9 A variation of the first exhaust operation and the second exhaust operation during substrate installation is shown. Figure 9 In the case of , the first position is defined as the Z-direction position of the fine movement stage 12a immediately before the holding surface 11a and the substrate S start to contact each other, and after the first position indicates the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S start to contact each other. That is, in Figure 9In the case of the above, the first exhaust operation is switched to the second exhaust operation at a point before the holding surface 11a of the substrate chuck 11 and the substrate S come into contact with each other. By this operation, the first exhaust operation is switched to the second exhaust operation while a gap exists between the substrate chuck 11 and the substrate S. Therefore, deformation of the substrate S caused by the substrate chuck 11 holding the substrate S can be reliably reduced.

[0088] <Second embodiment>

[0089] The second embodiment of the present disclosure will now be described. The first embodiment has already illustrated a case where the exhaust pressure is switched in two steps during the substrate mounting process, namely, the first and second exhaust operations. In this embodiment, a third exhaust operation is performed after the second exhaust operation, and the exhaust pressure is switched in three steps during the substrate mounting process. Note that this embodiment essentially inherits the first embodiment and can be used in accordance with the first embodiment except for the following matters.

[0090] Figure 10 An example of exhaust operation during the substrate mounting process according to this embodiment is shown. Figure 10 The Z-direction position of the fine movement stage 12a is represented by the abscissa, and the exhaust pressure is represented by the ordinate. The substrate mounting process according to this embodiment further includes a third exhaust operation for exhausting gas from the space above the substrate chuck 11 at a third exhaust pressure setting value (third exhaust pressure) greater than the second setting value after the second exhaust operation.

[0091] like Figure 10 As shown in FIG, in the substrate mounting process according to this embodiment, when the fine movement stage 12a begins to be driven in the +Z direction, that is, when the protrusion amount of the pin 13 from the holding surface 11a begins to be reduced, a first exhaust operation is started, which is performed at a first vacuum pressure setting value. When the Z-direction position of the fine movement stage 12a reaches the first position, a second exhaust operation is started, which is performed at an exhaust pressure of a second set value that is smaller than the first set value. In other words, at this point in time, the first exhaust operation is switched to the second exhaust operation. The first position can be defined as the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S come into contact with each other.

[0092] In the substrate mounting process according to this embodiment, when the Z-direction position of the fine movement stage 12a reaches the second position, a third exhaust operation is initiated, in which exhaust is performed at a third exhaust pressure setting greater than the second setting. In other words, at this point, the second exhaust operation is switched to the third exhaust operation. The third setting is the exhaust pressure setting for holding the substrate S by vacuum suction by the substrate chuck 11 and can be set to a value greater than the second setting. In this embodiment, the third setting is equal to the first setting, but can be equal to or less than the first setting (i.e., the third exhaust pressure can be equal to or less than the first exhaust pressure). The second position is defined as the Z-direction position of the fine movement stage 12a after the holding surface 11a and the substrate S come into contact with each other and is predetermined and stored in the memory unit 32. The third exhaust operation can shorten the time it takes for the substrate chuck 11 to hold the substrate S by forming a vacuum between them, thus being advantageous in terms of throughput.

[0093] Next, a method for switching the exhaust operation during the substrate installation process will be described. Figure 3 and Figure 4 As described above, the substrate holding apparatus according to the present embodiment is provided with the first exhaust system 63a including the electromagnetic valve 64a and the controller 65a and the second exhaust system 63b including the electromagnetic valve 64b and the controller 65b.

[0094] For example, a first exhaust operation is performed while both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b are open. Then, at the moment when the Z-direction position of the fine movement table 12a reaches the first position, a second exhaust operation is performed while the solenoid valve 64b of the second exhaust system 63b is shut off and the solenoid valve 64a of the first exhaust system 63a is closed. Alternatively, the second exhaust operation can be performed while the solenoid valve 64a of the first exhaust system 63a is shut off and only the solenoid valve 64b of the second exhaust system 63b is closed at that moment. This makes it possible to reduce the exhaust pressure set value (second set value) in the second exhaust operation to a value lower than the exhaust pressure set value (first set value) in the first exhaust operation.

[0095] When the Z-direction position of the fine motion stage 12a reaches the second position, the third exhaust operation is performed while the solenoid valve 64a of the first exhaust system 63a is turned on, and both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b are turned on. In this case, the first setpoint and the third setpoint are the same pressure value. Making the first and third setpoints equal can increase production throughput without increasing the number of piping systems. However, this is not a limitation and the first and third setpoints can be made different. In this case, the present disclosure can utilize an arrangement that includes a third exhaust system in addition to the first and second exhaust systems 63a, 63b (a three-line piping arrangement). Opening / closing the three solenoid valves provided for the three-line piping arrangement can enable the first, second, and third setpoints to be different from each other. For example, all three solenoid valves are turned on in the first exhaust operation, only one solenoid valve is turned on in the second exhaust operation, and only two solenoid valves are turned on in the third exhaust operation. Obviously, the solenoid valves and controllers can be replaced with servo valves and proportional solenoid valves without adding any piping. Changing the opening degree in the first exhaust operation and the third exhaust operation can change the exhaust pressure in each exhaust operation.

[0096] The substrate mounting process according to this embodiment has been exemplified as a case where the exhaust operation is switched while the fine-motion stage 12a is being moved. However, this is not a limitation. For example, a first exhaust operation can be performed while the fine-motion stage 12a is being moved, the movement of the fine-motion stage 12a can be temporarily stopped at the moment when the Z-direction position of the fine-motion stage 12a reaches the first position, and the first exhaust operation can be switched to the second exhaust operation in this state. In other words, the switch from the first exhaust operation to the second exhaust operation can be performed while temporarily stopping the reduction of the protrusion amount of the pin 13 from the holding surface 11a of the substrate chuck 11. In addition, after the second exhaust operation begins, the movement of the fine-motion stage 12a is resumed. The movement of the fine-motion stage 12a can be temporarily stopped at the moment when the Z-direction position of the fine-motion stage 12a reaches the second position, and the second exhaust operation can be switched to the third exhaust operation in this state.

[0097] In addition, during the substrate mounting process according to the present embodiment, the moving speed of the fine movement stage 12a can be changed. In the first exhaust operation, the moving speed of the fine movement stage 12a is increased to improve production throughput. In the second exhaust operation, the moving speed of the fine movement stage 12a is reduced to a speed lower than that in the first exhaust operation to reduce deformation of the substrate S caused by the substrate chuck 11 holding the substrate S. In the third exhaust operation, the moving speed of the fine movement stage 12a is increased to a speed higher than that in the second exhaust operation to quickly store the pins 13 in the substrate chuck 11. Stepwise changing the moving speed of the fine movement stage 12a in this way can more reliably reduce deformation of the substrate S caused by the substrate chuck 11 holding the substrate S, and can be advantageous in terms of production throughput.

[0098] As described above, in the substrate mounting process according to this embodiment, the third exhaust operation is performed after the second exhaust operation, in which exhaust is performed at a third exhaust pressure setting value that is greater than the second setting value. This can shorten the time it takes for the substrate chuck 11 to hold the substrate S by forming a vacuum between the substrate chuck 11 and the substrate S, and thus can be advantageous in terms of throughput.

[0099] [Variation]

[0100] In the above Figure 10 In the case of FIG, the first position is the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S come into contact with each other. Note, however, that the first position may be the Z-direction position of the fine movement stage 12a before the holding surface 11a and the substrate S come into contact with each other (for example, immediately before the holding surface 11a and the substrate S come into contact with each other).

[0101] Figure 11 A variation of the exhaust operation during substrate installation is shown. Figure 11 In the case of , the first position is defined as the Z-direction position of the fine movement stage 12a immediately before the holding surface 11a and the substrate S start to contact each other, and after the first position indicates the Z-direction position of the fine movement stage 12a when the holding surface 11a and the substrate S start to contact each other. That is, in Figure 9 In the case of the above, the first exhaust operation is switched to the second exhaust operation at a point before the holding surface 11 a of the substrate chuck 11 and the substrate S come into contact with each other. With this operation, the first exhaust operation is switched to the second exhaust operation while a gap exists between the substrate chuck 11 and the substrate S. As a result, deformation of the substrate S caused by the substrate chuck 11 holding the substrate S can be more reliably reduced.

[0102] In addition, Figure 11In the case of , the second position is indicated after the Z-direction position of the fine-movement stage 12a when the holding surface 11a and the substrate S come into contact with each other. That is, in Figure 11 In the case of the second position, the second exhaust operation is switched to the third exhaust operation at a point after the holding surface 11a of the substrate chuck 11 and the substrate S come into contact with each other. In this case, the second position can be understood as the Z-direction position of the fine movement stage 12a when the height of the upper surface of the pins 13 is lower than the holding surface of the substrate chuck 11. This makes it possible to shorten the time it takes for the substrate chuck 11 to hold the substrate S by forming a vacuum between them, and thus can be advantageous in terms of production throughput.

[0103] <Third embodiment>

[0104] The third embodiment of the present disclosure will be described. This embodiment illustrates a case where the exhaust operation is switched based on the monitoring result (detection result) obtained by the pressure sensor 62. That is, in this embodiment, the exhaust operation is switched when the internal pressure of the pipe 61 monitored (detected) by the pressure sensor 62 reaches the pressure threshold. The internal pressure of the pipe 61 can be understood as the exhaust pressure through the exhaust hole 11b. Note that this embodiment basically inherits the first embodiment and can follow the first embodiment except for the matters mentioned below. The second embodiment, which further performs a third exhaust operation, can be applied to the third embodiment. The case where the second embodiment is applied to the third embodiment will be described below.

[0105] Figure 12 FIG. 6 shows monitoring results obtained by the pressure sensor 62 during the substrate installation process. Figure 12 The Z-direction position of the fine movement stage 12 a is represented by the abscissa, and the exhaust pressure (internal pressure of the duct 61 ) detected by the pressure sensor 62 is represented by the ordinate.

[0106] During the substrate mounting process, as the protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 decreases, thereby narrowing the gap in the Z direction between the substrate chuck 11 and the substrate S, the amount of gas flowing from the outside into the space between the substrate chuck 11 and the substrate S decreases. As a result, the pressure in this space gradually decreases. In this embodiment, when the exhaust pressure detected by the pressure sensor 62 reaches the first pressure threshold P TH1 At the moment of , the first exhaust operation is switched to the second exhaust operation. When the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold value P TH2 At the moment of , the second exhaust operation is switched to the third exhaust operation. The first pressure threshold P TH1 and the second pressure threshold P TH2 It can be pre-set through experiments, simulations, etc. The second pressure threshold P TH2is set to be less than the first pressure threshold P TH1 The value of .

[0107] Even if the exhaust operation is switched based on the real-time result, the substrate S may be sucked at the first exhaust pressure setting value without any change, depending on the responsiveness of the pressure sensor 62, thereby causing deformation of the substrate S. Therefore, in this embodiment, the first pressure threshold value P is preset. TH1 and the second pressure threshold P TH2 When the exhaust pressure detected by the pressure sensor 62 reaches the first pressure threshold value P TH1 At the moment of , the first exhaust operation is switched to the second exhaust operation, and when the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold value P TH2 At the timing of the exhaust operation, the second exhaust operation is switched to the third exhaust operation. In this way, by using the monitoring result (detection result) obtained by the pressure sensor 62 to determine the timing of the exhaust operation switch, it is possible to reduce the side slip of the substrate S on the pins 13 and reduce the deformation of the substrate S when the substrate S is held by the substrate chuck 11.

[0108] The relationship between the time when the exhaust pressure is switched from the first set value to the second set value and the side sliding amount of the substrate S on the pin 13 is measured in advance. Based on this relationship, the first pressure threshold P TH1 The first pressure threshold P can be determined by using simulation to determine the value that can reduce the side slip of the substrate S. TH1 In addition, the relationship between the time when the exhaust pressure is switched from the second set value to the third set value and the deformation amount of the substrate S is measured in advance. Based on this relationship, the second pressure threshold P TH2 The second pressure threshold P can be determined by using simulation. TH2 .

[0109] [Variation]

[0110] In the above Figure 12 In the case of , the moment of switching the exhaust operation is determined based on the monitoring result obtained by the pressure sensor 62. However, a flow sensor that monitors (detects) the flow rate of the gas flowing in the pipe 61 may be provided instead of the pressure sensor 62, and the exhaust operation switching may be performed based on the monitoring result (detection result) obtained by the flow sensor. More specifically, at the moment when the flow rate monitored (detected) by the flow sensor reaches the first flow threshold, the first exhaust operation is switched to the second exhaust operation, and at the moment when the flow rate monitored (detected) by the flow sensor reaches the second flow threshold, the second exhaust operation is switched to the third exhaust operation. The flow rate of the gas flowing in the pipe 61 can be understood as the exhaust flow rate through the exhaust hole 11b. With the first pressure threshold P TH1 and the second pressure threshold PTH2 Similarly, the first flow rate threshold and the second flow rate threshold can be preset through experiments, simulations, etc. The second flow rate threshold is set to a value smaller than the first flow rate threshold.

[0111] <Fourth embodiment>

[0112] The fourth embodiment of the present disclosure will be described. The first embodiment has already illustrated a case where the first exhaust operation is switched to the second exhaust operation during the period from when the protrusion amount of the pin 13 from the holding surface 11a of the substrate chuck 11 begins to decrease to when the holding surface 11a and the substrate S come into contact with each other. The fourth embodiment will illustrate a case where the first exhaust operation is switched to the second exhaust operation while the substrate S is already placed (mounted) on the holding surface 11a of the substrate chuck 11. Note that this embodiment basically inherits the first embodiment and can follow the first embodiment except for the matters mentioned below. In addition, the second embodiment and / or the third embodiment can be applied to the fourth embodiment.

[0113] The present embodiment configured to switch the first exhaust operation to the second exhaust operation while the substrate S has been placed (mounted) on the holding surface 11 a of the substrate chuck 11 is particularly effective in causing the substrate chuck 11 to hold the substrate S having a warp. 13A to 13C 1 and 2 are views for explaining a substrate holding process in which the substrate chuck 11 holds the substrate S having a warp. 13A to 13C The substrate holding process according to the present embodiment is shown in chronological order. Note that the controller 30 can control the substrate holding process.

[0114] Figure 13A The figure shows a state where a warped substrate S is placed on the holding surface 11a of the substrate chuck 11. In this state, the peripheral portion of the substrate S placed on the substrate chuck 11 (holding surface 11a) is separated from the substrate chuck 11. In this state (i.e., when the peripheral portion of the substrate S is not in contact with the substrate chuck 11), the first exhaust operation begins. This reduces the atmospheric pressure in the space between the substrate chuck 11 and the substrate S, gradually correcting the warpage of the substrate S.

[0115] Figure 13B and Figure 13C FIG. 4 shows a state where the warpage of the substrate S is gradually corrected. Figure 13B Before the substrate S comes into contact with the substrate chuck 11 (holding surface 11 a), that is, before (for example, immediately before) the entire substrate S comes into contact with the substrate chuck 11 (holding surface 11 a), the first exhaust operation is switched to the second exhaust operation. This makes it possible to reduce deformation of the substrate S caused when the substrate chuck 11 holds the substrate S. Alternatively, after the entire substrate S comes into contact with the substrate chuck 11 (holding surface 11 a), the second exhaust operation can be switched to the third exhaust operation.

[0116] Will refer to Figure 3 An example of the arrangement of the substrate holding unit 10 for holding a substrate S placed on the substrate chuck 11 will be described. In this embodiment, while the substrate S is placed on the holding surface 11a of the substrate chuck 11, the first exhaust operation (first exhaust pressure setting value) is switched to the second exhaust operation (second exhaust pressure setting value). As in the first embodiment, the switch from the first exhaust operation to the second exhaust operation can be performed by opening / closing the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b. Even when the first exhaust operation is switched to the second exhaust operation while the substrate S is already placed on the holding surface 11a of the substrate chuck 11, deformation of the substrate S caused by the substrate chuck 11 holding the substrate S can be reduced.

[0117] As in the third embodiment, the timing of switching from the first exhaust operation to the second exhaust operation can be determined based on the monitoring results obtained by the pressure sensor 62. For example, when the substrate chuck 11 and the substrate S come into contact with each other, the exhaust pressure (the internal pressure of the pipe 61) changes rapidly. Therefore, depending on the responsiveness of the pressure sensor 62, even if the exhaust pressure is switched based on the real-time results, the substrate S may be held at a still high exhaust pressure, thereby causing deformation. In this embodiment, as Figure 14 As shown in FIG, the first pressure threshold P is preset. TH1 , and when the exhaust pressure detected by the pressure sensor 62 reaches the first pressure threshold P TH1 The first exhaust operation is switched to the second exhaust operation at the moment of . The moment of switching from the first exhaust operation to the second exhaust operation based on the monitoring result obtained by the pressure sensor 62 can reduce the deformation of the substrate S caused when the substrate chuck 11 holds the substrate S. The relationship between the moment when the exhaust pressure is switched from the first set value to the second set value and the deformation amount of the substrate S is measured in advance. Based on this relationship, the first pressure threshold value P TH1 The first pressure threshold P can be determined by using simulation. TH1 .

[0118] In this embodiment, as described in the modified version of the third embodiment, a flow sensor that monitors (detects) the flow rate of gas flowing in the pipe 61 can be provided in place of the pressure sensor 62. The exhaust operation can be switched based on the monitoring (detection) results obtained by the flow sensor. Furthermore, this embodiment has been described as switching the exhaust pressure in two steps: the first and second exhaust operations. However, as described in the second embodiment, the third exhaust operation can be performed after the second exhaust operation, allowing the exhaust pressure to be switched in three steps.

[0119] As described above, in the substrate holding process according to this embodiment, the first exhaust operation is started at the same time as the peripheral portion of the substrate S placed on the substrate chuck 11 is separated from above the substrate chuck 11, and the first exhaust operation is switched to the second exhaust operation before the entire substrate S comes into contact with the substrate chuck 11. This makes it possible to reduce deformation of the substrate S caused when the substrate chuck 11 is holding the substrate S. Compared to a case where the first exhaust operation is switched to the second exhaust operation after the entire substrate S comes into contact with the substrate chuck 11, this operation can be advantageous in terms of throughput.

[0120] <Fifth embodiment>

[0121] The fifth embodiment of the present disclosure will be described. The first embodiment has already exemplified a case where the supply hand 51 transfers the substrate S to the pins 13 protruding from the holding surface 11a of the substrate chuck 11. The fifth embodiment will exemplify a case where the supply hand 51 transfers the substrate S directly to the substrate chuck 11. Note that this embodiment is essentially a successor to the first embodiment and can follow the first embodiment except for the matters mentioned below. In addition, the second embodiment and / or the third embodiment can be applied to the fifth embodiment.

[0122] In this embodiment, the process of reducing the gap between the substrate chuck 11 and the substrate S by driving the supply hand 51 holding the substrate S to mount the substrate S on the substrate chuck 11 can be defined as a substrate mounting process (substrate mounting step). In the substrate mounting process according to this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the gap between the substrate chuck 11 and the substrate S begins to decrease by driving the supply hand 51 to when the substrate chuck 11 and the substrate S begin to contact each other.

[0123] Figures 15A to 15C 1 is a view for explaining a substrate holding process when the supply hand 51 conveys the substrate S onto the substrate chuck 11 . Figures 15A to 15C The substrate holding process according to the present embodiment is shown in chronological order. Note that the controller 30 may control the substrate mounting process.

[0124] Figure 15A The figure shows a state where the substrate S held by the supply hand 51 is placed above the substrate chuck 11. In this state, the substrate chuck 11 (holding surface 11a) is separated from the substrate S. In this state (i.e., while the substrate S is supported by the supply hand 51), the first exhaust operation begins. In this case, the supply hand 51 according to this embodiment is configured to hold the lower surface of the substrate S by vacuum suction. However, this is not a limitation, and the supply hand 51 can also be configured to hold the upper surface of the substrate S by vacuum suction.

[0125] Figure 15Band Figure 15C FIG. 1 shows a state where the gap between the substrate chuck 11 and the substrate S is reduced as the supply hand 51 is driven in the −Z direction. Figure 15B In the state in which the substrate chuck 11 (holding surface 11 a) and the substrate S come into contact with each other, the first exhaust operation is switched to the second exhaust operation. This makes it possible to reduce deformation of the substrate S caused when the substrate chuck 11 holds the substrate S. In addition, after the substrate chuck 11 (holding surface 11 a) and the substrate S come into contact with each other, the second exhaust operation can be switched to the third exhaust operation.

[0126] Figure 16 An example of the first exhaust operation and the second exhaust operation during the substrate installation process is shown. Figure 16 The Z-direction position of the supply hand 51 is represented by the abscissa, and the exhaust pressure is represented by the ordinate.

[0127] In the substrate mounting process according to this embodiment, a first exhaust operation begins when the supply hand 51 begins to be driven in the -Z direction while holding the substrate S above the substrate chuck 11. In this first exhaust operation, exhaust is performed at a first exhaust pressure setting value to reduce side slipping of the substrate S on the supply hand 51 due to wind pressure generated by the high-speed movement of the supply hand 51. The first setting value is set to a value that allows the side slipping amount (displacement amount) of the substrate S on the supply hand 51 to fall within an allowable range during the period from when the supply hand 51 begins to be driven in the -Z direction to when the holding surface 11a of the substrate chuck 11 and the substrate S come into contact with each other. This reduces side slipping of the substrate S on the supply hand 51.

[0128] The exhaust volume during the first exhaust operation (the flow rate of gas exhausted through the exhaust holes 11b) is preferably equal to or greater than the flow rate of gas squeezed out of the space above the substrate chuck 11 when the supply hand 51 is driven in the -Z direction (hereinafter sometimes referred to as the gas squeeze volume). However, note that depending on the placement of the piping system in the equipment, it may be difficult to make the exhaust volume during the first exhaust operation equal to or greater than the gas squeeze volume. In this case, it is preferable to set the exhaust volume during the first exhaust operation in consideration of the supply hand 51's holding of the substrate S. For example, since the supply hand 51 draws the substrate S by vacuum suction, as long as the exhaust volume during the first exhaust operation is equal to or greater than the value obtained by subtracting the vacuum suction volume of the substrate S by the supply hand 51 from the gas squeeze volume, the substrate S can be reduced from slipping on the supply hand 51.

[0129] When the supply hand 51 reaches the first position in the Z direction, the second exhaust operation begins. That is, at this point, the first exhaust operation switches to the second exhaust operation. In the second exhaust operation, exhaust is performed at a second exhaust pressure setting value, which is lower than the first setting value, to reduce deformation of the substrate S caused by the substrate chuck 11 holding the substrate S. The second setting value is set to a value that keeps the deformation of the substrate S caused by the substrate chuck 11 holding the substrate S within an allowable range. This reduces deformation of the substrate S caused by the substrate chuck 11 holding the substrate S. Furthermore, providing the second exhaust operation reduces friction between the holding surface 11a of the substrate chuck 11 and the substrate S, thereby reducing wear on the substrate chuck 11. In this case, the first position is defined as the Z direction position of the supply hand 51 when the holding surface 11a of the substrate chuck 11 and the substrate S come into contact, or a position closer to the +Z direction side than this Z direction position. The first position is pre-determined through experiments, simulations, etc. and stored in the controller 30 (memory unit 32).

[0130] As described above, in the substrate installation process according to the present embodiment, the first exhaust operation is switched to the second exhaust operation during the time period from when the gap between the substrate chuck 11 and the substrate S begins to decrease by driving the supply hand 51 to when the substrate chuck 11 and the substrate S begin to contact each other. Since the side slip of the substrate S on the supply hand 51 is reduced by the first exhaust operation, the substrate installation process can be performed without reducing the driving speed of the supply hand 51. This is advantageous in terms of production volume. Then, the second exhaust operation can reduce the deformation of the substrate S caused when the substrate S contacts the holding surface 11a of the substrate chuck 11. In addition, at the moment when or before the holding surface 11a and the substrate S begin to contact each other, the first exhaust operation is switched to the second exhaust operation. This is advantageous in terms of production volume. That is, the substrate installation process according to the present embodiment is advantageous in terms of the deformation of the substrate S and the production volume of the substrate holding process.

[0131] <Example of the method for producing an article>

[0132] The article manufacturing method according to an embodiment of the present disclosure is suitable for manufacturing articles, such as micro devices such as semiconductor devices or elements having microstructures. The article manufacturing method according to this embodiment includes a processing step of processing a substrate by using the above-mentioned substrate processing equipment and substrate processing method, and a manufacturing step of manufacturing an article from the substrate processed in the processing step. The article manufacturing method also includes other known steps (oxidation, deposition, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, and packaging). Compared with conventional methods, the article manufacturing method according to this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article.

[0133] <Other Examples>

[0134] The embodiments (one or more) of the present disclosure may also be implemented by a computer of a system or device that reads and executes computer-executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be more comprehensively referred to as a "non-transitory computer-readable storage medium") to perform the functions of one or more of the above-described embodiments, and / or includes one or more circuits (e.g., application-specific integrated circuits (ASICs)) for performing the functions of one or more of the above-described embodiments; and by a method executed by a computer of a system or device that, for example, reads and executes computer-executable instructions from a storage medium to perform the functions of one or more of the above-described embodiments and / or controls one or more circuits to perform the functions of one or more of the above-described embodiments. A computer may include one or more processors (e.g., a central processing unit (CPU), a microprocessor (MPU), etc.), and may include a network of independent computers or independent processors to read and execute computer-executable instructions. Computer-executable instructions may be provided to the computer, for example, from a network or storage medium. Storage media may include, for example, a hard disk, random access memory (RAM), read-only memory (ROM), memory of a distributed computing system, an optical disk (such as a compact disc (CD), a digital versatile disc (DVD), or a Blu-ray disc (BD)). TM ), one or more of a flash memory device, a memory card, etc.

[0135] Other embodiments

[0136] The embodiments of the present invention may also be implemented by providing software (including a computer program product including computer programs / instructions) that performs the functions of the above-described embodiments to a system or device via a network or various storage media, and a computer (central processing unit (CPU), microprocessing unit (MPU)) of the system or device reads and executes the computer program / instructions.

[0137] While the present disclosure has been described with reference to exemplary embodiments, it is to be understood that the present disclosure is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

Claims

1. A substrate holding device for holding a substrate, the substrate holding device comprising: a chuck configured to support a substrate; a pin configured to protrude from the chuck; and a controller configured to control exhaust of a space between the substrate and the chuck; wherein the controller is configured to control the exhaust so as to perform a first exhaust operation of exhausting gas from the space at a first exhaust pressure, and perform a second exhaust operation of exhausting gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation; and The second exhaust operation is performed during a period from when the protrusion amount of the pin starts to decrease to when the chuck and the substrate come into contact with each other.

2. The substrate holding device according to claim 1, wherein The first exhaust operation is switched to the second exhaust operation at a timing when or before the chuck and the substrate come into contact with each other.

3. The substrate holding device according to claim 1, wherein The first exhaust operation is started in a state where a gap exists between the chuck and the substrate, and The first exhaust pressure is set to a value that enables the displacement amount of the substrate on the pin to fall within an allowable range.

4. The substrate holding device according to claim 1, wherein The second exhaust pressure is set to a value that enables a deformation amount of the substrate caused by the chuck supporting the substrate to fall within an allowable range.

5. The substrate holding device according to claim 1, wherein The controller is configured to control exhaust so as to further perform a third exhaust operation of exhausting gas from the space at a third exhaust pressure higher than the second exhaust pressure after the second exhaust operation.

6. The substrate holding device according to claim 5, wherein The third exhaust pressure is not greater than the first exhaust pressure.

7. The substrate holding device according to claim 5, wherein The third exhaust operation is started after the chuck and the substrate come into contact with each other.

8. The substrate holding device according to claim 1, wherein The first exhaust operation is switched to the second exhaust operation while the protrusion amount of the pin from the chuck is reduced.

9. The substrate holding device according to claim 1, wherein The first exhaust operation is switched to the second exhaust operation while stopping the reduction of the protrusion amount of the pin from the chuck.

10. The substrate holding device according to claim 1, wherein The first exhaust operation is switched to the second exhaust operation according to the protrusion amount of the pin from the chuck.

11. The substrate holding device according to claim 1 , further comprising a sensor configured to detect exhaust pressure, in, The first exhaust operation is switched to the second exhaust operation according to a detection result of the sensor.

12. The substrate holding device according to claim 1, further comprising a flow rate sensor configured to detect a flow rate of gas exhausted from the space, in, The first exhaust operation is switched to the second exhaust operation according to a detection result of the flow sensor.

13. A substrate holding device for holding a substrate, the substrate holding device comprising: a chuck configured to support a substrate; and a controller configured to control exhaust of a space between the substrate and the chuck; wherein the controller is configured to control the exhaust so as to perform a first exhaust operation of exhausting gas from the space at a first exhaust pressure, and perform a second exhaust operation of exhausting gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation; and The first exhaust operation is started when a peripheral portion of a substrate placed on the chuck is not in contact with the chuck, and the second exhaust operation is performed before the entire substrate comes into contact with the chuck.

14. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A substrate holding device as defined in any one of claims 1 to 13; and A processor is configured to process a substrate held by the substrate holding device.

15. A substrate holding method for holding a substrate, the substrate holding method comprising: performing a first exhaust operation of exhausting gas from a space between a substrate and a chuck configured to support the substrate at a first exhaust pressure; and performing a second exhaust operation to exhaust gas from the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, The second exhaust operation is performed within a period from when a protrusion amount of the pin configured to protrude from the chuck starts to decrease to when the chuck and the substrate come into contact with each other.

16. The substrate holding method according to claim 15, wherein: The first exhaust operation is performed while the substrate is supported by the transfer hand.

17. A substrate processing method for processing a substrate, the substrate processing method comprising: causing the chuck to hold the substrate by using the substrate holding method defined in claim 15; and The substrate held by the chuck is processed.

18. A method for manufacturing an article, comprising: processing a substrate by using the substrate processing method defined in claim 17; and Articles are manufactured from the treated substrate.

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