Top heat dissipation power module with sampling function

Abstract

The invention discloses a top heat dissipation power module with a sampling function, and relates to the technical field of semiconductors. Comprising an upper bridge power chip, a lower bridge power chip, a positive electrode pin, a negative electrode pin, an output pin, an upper bridge driving pin, a lower bridge driving pin, a first sampling pin, a second sampling pin and a sampling sensor. The sampling sensor is arranged on the negative electrode metal layer and electrically connected with the first sampling pin and the second sampling pin. According to a circuit topological structure, a current sampling resistor or a temperature sampling resistor is creatively integrated on a circuit carrier, meanwhile, electrical safety is considered, the current sampling resistor or the temperature sampling resistor is arranged on a low-voltage side, damage of high voltage to a weak current sampling circuit under the extreme condition is avoided, and the reliability of the weak current sampling circuit is improved. And the sampling pin is arranged at the electrical safety part of the power module, so that the electrical safety of the power module is improved, and the size of the power module is fully reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a top heat dissipation power module with a sampling function. Background Art

[0002] With the rapid development of the power electronics industry and the continuous advancement of chip and packaging technologies, power devices are shrinking in size while increasing in power density. At the same time, photovoltaics, power supplies, and other power converters are placing higher demands on power electronics packaging. While miniaturization is crucial, these devices must also meet performance requirements such as heat dissipation and conversion efficiency, while also ensuring ease of installation and high reliability.

[0003] In recent years, many small power devices with superior performance have been launched at home and abroad, with the most representative ones being the SMIT package and the Q-DPAK package, especially the Q-DPAK package, which is smaller in size. In existing patent documents, for example, a "semiconductor package including embedded electrical conductors" applied for in May 2023, with application number: 202310508724.6, the case disclosed the technology for the Q-DPAK package product, which is compatible with a variety of circuit topologies, including a half-bridge circuit. The structure has two pads on the top, some pins are directly connected to the two pads, and some pins are connected by electrical conductors. Although the existing technology has been greatly reduced in size, the following problems still exist in actual use: 1) The top pad is not insulated. When in use, insulation must be provided between the top pad and the heat sink.

[0004] 2) The distance between the positive and negative pins is only 5.56mm, which cannot meet the minimum creepage distance requirements in safety regulations (pollution degree 2, material group II, effective working voltage 800V).

[0005] 3) Although some existing power modules are integrated with sensors and have sampling functions, the sensors require independent spatial layout and are usually located on the high-voltage side. This not only poses a safety hazard, but also has high manufacturing costs, which is not conducive to the miniaturization and multi-functionality of power modules. Summary of the Invention

[0006] In response to the above problems, the present invention provides a top heat dissipation power module with sampling function that takes electrical safety into consideration while avoiding damage to the weak current sampling circuit caused by high voltage in extreme situations, thereby improving the electrical safety of the power module and reducing the size of the power module.

[0007] The technical solution of the present invention is: A top heat dissipation power module with a sampling function, comprising: A circuit carrier, comprising a positive metal layer, a negative metal layer and an output metal layer adjacently and spaced apart; at least the back surface of the circuit carrier is exposed outside the plastic package; an upper bridge power chip, arranged on the positive metal layer and connected to the output metal layer; A lower bridge power chip is provided on the output metal layer and is connected to the negative metal layer; A positive electrode pin, one end of which is connected to the positive electrode metal layer and the other end of which extends out of the plastic package; A negative electrode pin, on the same side as the positive electrode pin, with one end connected to the negative electrode metal layer and the other end extending out of the plastic package; An output pin is provided on the opposite side of the positive electrode pin, one end of the output pin is connected to the output metal layer, and the other end of the output pin extends out of the plastic package; an upper bridge driving pin, arranged side by side and adjacent to the output pin; A lower bridge driving pin is arranged in the same direction as the output pin and is located on the other side of the negative electrode pin relative to the plastic package (500); A first sampling pin is arranged side by side and adjacent to the lower bridge driving pin; A second sampling pin is arranged side by side and adjacent to the cathode pin; The sampling sensor is disposed on the negative metal layer and is electrically connected to the first sampling pin and the second sampling pin respectively.

[0008] The circuit carrier comprises an outer metal layer, an insulating layer and an inner metal layer which are fixedly connected in sequence; The external metal layer is arranged on the other side of the insulating layer relative to the positive metal layer, the negative metal layer and the output metal layer, and is exposed outside the plastic package body.

[0009] The sampling sensor is a current sampling resistor; The negative electrode metal layer includes adjacent and spaced apart layers: A negative electrode connecting metal layer is disposed adjacent to and spaced apart from the positive electrode metal layer; a negative electrode transition metal layer, spaced between the output metal layer and the negative electrode connection metal layer; The two ends of the current sampling resistor are respectively arranged on the negative electrode transition metal layer and the negative electrode connection metal layer; The first sampling pin is electrically connected to the negative transition metal layer; The second sampling pin and the cathode pin are arranged side by side on the cathode connection metal layer.

[0010] The negative electrode transition metal layer is respectively adjacent to the negative electrode connection metal layer, the positive electrode metal layer and the output metal layer and is spaced apart; The top surface of the lower bridge power chip is electrically connected to the negative transition metal layer, and the first sampling pin is electrically connected to the negative transition metal layer.

[0011] The negative electrode transition metal layer is arranged between the lower bridge power chip and the upper bridge power chip, and gradually widens from the output pin to the negative electrode pin; The output metal layer is arranged between the lower bridge power chip and the upper bridge power chip, and gradually narrows toward the positive electrode pin. The output metal layer is adjacent to and spaced from the negative electrode transition metal layer.

[0012] The negative electrode transition metal layer is adjacent to the negative electrode connection metal layer and the output metal layer and is spaced apart from each other; The top surface of the lower bridge power chip is electrically connected to the negative transition metal layer, and the first sampling pin is connected to the negative transition metal layer.

[0013] The sampling sensor is a temperature sampling resistor; The negative electrode metal layer is arranged in an L-shape around the lower bridge power chip; The temperature sampling resistor is arranged on the negative electrode metal layer, and the top surface is electrically connected to the first sampling pin via a bonding wire; The lower bridge power chip is electrically connected to the negative electrode metal layer.

[0014] Specifically, the negative electrode metal layer includes: A negative metal layer connection portion, flush with the positive metal layer and extending to the side of the lower bridge power chip; The negative metal layer transition portion extends from the negative metal layer connection portion to the first sampling pin.

[0015] In this case, the bottom surface of the temperature sampling resistor is welded or sintered on the transition part of the negative metal layer, and the top surface is electrically connected to the first sampling pin through a bonding wire; the top surface of the lower bridge power chip is electrically connected to the negative metal layer connection part or / and the negative metal layer transition part.

[0016] The sampling sensor is a temperature sampling resistor; A second sampling metal layer is provided on the side of the negative electrode metal gold layer away from the positive electrode metal layer; The two ends of the temperature sampling resistor are respectively arranged on the negative electrode metal layer and the second sampling metal layer; The first sampling pin is electrically connected to the negative metal layer; The second sampling pin is welded on the second sampling metal layer.

[0017] The second sample metal layer width in this case (such as Figure 10 in the longitudinal direction) is equal to the width of the negative electrode metal layer.

[0018] The sampling sensor is a temperature sampling resistor; A second sampling metal layer is provided on the side of the negative electrode metal gold layer away from the positive electrode metal layer; The bottom surface of the temperature sampling resistor is arranged (including welding, sintering or bonding) on ​​the negative electrode metal layer, and the top surface of the temperature sampling resistor is electrically connected to the second sampling metal layer through a bonding wire; The first sampling pin is electrically connected to the negative electrode metal layer through a bonding wire.

[0019] The output metal layer includes: An output extension portion is located between the upper bridge power chip and the lower bridge power chip and is provided with an output bonding area whose width gradually decreases toward the negative electrode metal layer; an output chip connection portion, located on a side of the output bonding area; The negative electrode metal layer includes: a negative transition metal layer, disposed between the lower bridge power chip and the upper bridge power module, and gradually widening from the output pin toward the negative pin; a top surface of the lower bridge power chip is electrically connected to the negative transition metal layer, and a first sampling pin is electrically connected to the negative transition metal layer via a bonding wire; A negative electrode connection metal layer extends from the negative electrode transition metal layer toward the negative electrode pin; the bottom surface of the temperature sampling resistor is arranged (including welding, sintering or bonding) on ​​the negative electrode connection metal layer.

[0020] Based on the circuit topology, the present invention innovatively integrates a current sampling resistor or a temperature sampling resistor on a circuit carrier, while taking electrical safety into consideration. The current sampling resistor or the temperature sampling resistor is set on the low-voltage side, avoiding damage to the weak-current sampling circuit caused by high voltage in extreme cases. The sampling pin is set in an electrically safe position of the power module, thereby improving the electrical safety of the power module and fully reducing the size of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the structure of the power module using current sampling resistor Figure 1 ; Figure 2 This is a schematic diagram of the structure of the power module using current sampling resistor Figure 2 ; Figure 3 This is a schematic diagram of the structure of the power module using current sampling resistor Figure 3 ; Figure 4 This is a schematic diagram of the structure of the power module using current sampling resistor Figure 4 ; Figure 5 This is a schematic diagram of the structure of the power module using current sampling resistor Figure 5 ; Figure 6 This is the circuit topology diagram of a power module using IGBT FRD as the power chip; Figure 7 This is the circuit topology diagram of a power module using MOSFET as the power chip; Figure 8 This is a schematic diagram of the structure of a power module using a bonded temperature sampling resistor. Figure 1 ; Figure 9 This is a schematic diagram of the structure of a power module using a bonded temperature sampling resistor. Figure 2 ; Figure 10 This is a schematic diagram of the structure of a power module using a welding type temperature sampling resistor; Figure 11 This is a schematic diagram of the structure of a power module using a bonded temperature sampling resistor. Figure 3 ; Figure 12 This is a schematic diagram of the structure of a power module using a bonded temperature sampling resistor. Figure 4 ; Figure 13 It is a power module circuit topology in which the power chip adopts IGBT FRD integrated temperature sensor; Figure 14 It is a power module circuit topology in which the power chip uses a MOSFET integrated temperature sensor; In the figure, 100 is an insulating substrate, 110 is a positive metal layer, 120 is a negative metal layer, 121 is a negative transition metal layer, and 122 is a negative connecting metal layer. 120A is the negative metal layer connection part, 120B is the negative metal layer transition part, 120C is the second sampling metal layer, 1221 is the negative electrode bonding area, 130 is the output metal layer, 131 is the output extension part, 1311 is the output bonding area, 132 is the output chip connection part, 200 is the upper bridge power chip, 300 is the lower bridge power chip, 410 is the positive pin, 420 is the negative pin, 430 is the upper bridge drive pin, 431 is the upper bridge gate pin, 432 is the upper bridge source or emitter pin, 4311 is the upper bridge gate metal layer, 4321 is the upper bridge source or emitter metal layer, 440 is the first sampling pin, 450 is the second sampling pin, 460 is the lower bridge drive pin, 461 is the lower bridge gate pin, 462 is the lower bridge source or emitter pin, 4611 is the lower bridge gate metal layer, 4621 is the lower bridge source or emitter metal layer; 470 is the output pin, 500 is plastic package, 600 is a sampling sensor, 610 is a current sampling resistor, and 620 is a temperature sampling resistor. DETAILED DESCRIPTION

[0022] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0023] In the description of the present invention, it should be understood that terms such as "upper," "lower," "left," "right," "vertical," and "horizontal" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. These terms are used solely to facilitate and simplify the description of the present invention and are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0024] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; and internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention based on the specific circumstances.

[0025] The "welding" mentioned in the present invention generally refers to welding using solder, the "sintering" mentioned generally refers to connecting using sintered silver or sintered copper, and the "bonding" mentioned refers to bonding using conductive silver glue or silver paste.

[0026] Example 1 A top heat dissipation power module with a sampling function, comprising: The circuit carrier 100 includes a positive metal layer 110 , a negative metal layer 120 and an output metal layer 130 that are adjacently and spaced apart. In this embodiment, the circuit carrier 100 includes an outer metal layer, an insulating layer and an inner metal layer that are fixedly connected in sequence.

[0027] The inner metal layer includes a positive metal layer 110, a negative metal layer 120 and an output metal layer 130 that are adjacently and spaced apart, and also includes an upper bridge gate metal layer 4311, an upper bridge source or emitter metal layer 4321, a lower bridge gate metal layer 4611 and a lower bridge source or emitter metal layer 4621; The negative electrode metal layer 120 is divided into a negative electrode transition metal layer 121 and a negative electrode connection metal layer 122; The negative electrode connection metal layer 122 is adjacent to and spaced apart on the side of the positive electrode metal layer 110 close to the negative electrode pin 420, and one end is flush with the positive electrode metal layer 110; the negative electrode transition metal layer 121 is adjacent to and spaced apart from the negative electrode connection metal layer 122 in the direction of the output pin 470, and extends toward the output pin 470.

[0028] The sampling sensor 600 is disposed on the negative electrode metal layer 120 and is electrically connected to the first sampling pin 440 and the second sampling pin 450, respectively. Specifically, the sampling sensor 600 is a current sampling resistor 610, the two ends of which are welded to the negative electrode transition metal layer 121 and the negative electrode connection metal layer 122, respectively. The current sampling resistor principle is a method for measuring current in a circuit, mainly composed of a low-resistance resistor element, commonly referred to as a sampling resistor. After the sampling resistor is connected to the circuit, current will flow through the sampling resistor. According to Ohm's law, the voltage across the resistor is proportional to the current passing through the resistor. Therefore, by measuring the voltage across the resistor, the current passing through the circuit is indirectly obtained.

[0029] The outer metal layer of the circuit carrier 100 is partially exposed outside the plastic package 500 .

[0030] During implementation, the top, or outer metal layer, of the top-heat-dissipating power module with sampling function of the present invention contacts the heat sink via a thermally conductive medium. Heat generated by the power chip is efficiently transferred to the heat sink via the circuit carrier 100, thereby improving the heat dissipation performance of the power module. The outer and inner metal layers of the circuit carrier 100 are made of Cu or Al. An insulating layer, made of Al2O3, AlN, Si3N4, or resin, is located between the outer and inner metal layers to provide insulation.

[0031] The bottom surface of the upper bridge power chip 200 is placed on the positive metal layer 110 by welding, sintering or bonding, and the top surface is connected to the output metal layer 130 by bonding wires or copper bridges; The bottom surface of the lower bridge power chip 300 is disposed on the output metal layer 130 by welding, sintering or bonding, and the top surface is connected to the negative metal layer 120 by bonding wires or copper bridges; There are one or more positive electrode pins 410, one end of which is welded to the positive electrode metal layer 110 and the other end extends from the plastic package 500; There are one or more negative electrode pins 420, which are located on one side of the plastic package together with the positive electrode pin 410, with one end welded to the negative electrode metal layer 120 and the other end extending from the plastic package 500; In this case, the distance between the positive pin 410 and the negative pin 420 is not less than 6 mm; The output pin 470 is provided on the opposite side of the positive pin 410 and the negative pin 420 , with one end welded to the output metal layer 130 and the other end extending from the plastic package 500 ; The upper bridge driving pin 430 is welded on the upper bridge gate metal layer, the upper bridge source or emitter metal layer, and is adjacent to and arranged in the same direction as the output pin 470; Specifically, the upper bridge drive pins 430 include the following interval arrangements: An upper bridge gate pin 431 has one end welded to the upper bridge gate metal layer and the other end extending from the plastic package 500; The upper bridge source or emitter pin 432 has one end welded to the upper bridge source or emitter metal layer and the other end extending from the plastic package 500; Because the upper bridge source or emitter pin 432 and the output pin 470 have the same potential, they can be placed adjacent to each other. There is no high voltage between the upper bridge gate pin 431 and the upper bridge source or emitter pin 432, so they can also be placed adjacent to each other. The pin spacing between the upper bridge gate pin 431, the upper bridge source or emitter pin 432, and the output pin 470 is within 0.7 mm.

[0032] The lower bridge driving pin 460 is welded on the lower bridge gate metal layer, the lower bridge source or emitter metal layer, and is arranged in the same direction as the output pin 470 and on the side opposite to the negative pin 420; The lower bridge driver pins 460 include: A lower bridge gate pin 461 , one end of which is welded to the lower bridge gate metal layer, and the other end of which extends out from the plastic package 500 ; One end of the lower bridge source or emitter pin 462 is welded to the lower bridge source or emitter metal layer, and the other end extends out from the plastic package 500 .

[0033] There is a high voltage between the lower bridge source or emitter pin 462 and the output pin 470, so the distance must meet safety regulations. However, there is no high voltage between the lower bridge source or emitter pin 462 and the lower bridge gate pin 461, so they can be placed adjacent to each other. Therefore, the lower bridge gate pin 461, the lower bridge source or emitter pin 422, and the output pin 470 are separated, with a pin spacing of at least 6 mm.

[0034] Similarly, there is no high voltage between the first sampling pin 440 and the lower bridge gate pin 461 or the lower bridge source or emitter pin 462. Therefore, the first sampling pin 440 is positioned adjacent to the lower bridge gate pin 461 and the lower bridge source or emitter pin 462, with the pin spacing within 0.7 mm. There is no high voltage between the second sampling pin 450 and the cathode pin 420. Therefore, the second sampling pin 450 is positioned adjacent to the cathode pin 420, with the pin spacing within 0.7 mm.

[0035] In this embodiment, the pins are distributed into four areas on both sides of the plastic package 500, among which: the positive pin 410 is located in the first area; the negative pin 420 and the second sampling pin 450 are located in the second area; the output pin 470, the upper bridge source or emitter pin 432 and the upper bridge gate pin 431 are located in the third area; the lower bridge source or emitter pin 462, the lower bridge gate pin 461 and the first sampling pin 440 are located in the fourth area; the first area and the second area are located on the same side of the plastic package 500, and the third area and the fourth area are located on the other side of the plastic package 500, that is, the upper bridge drive pin 430 and the lower bridge drive pin 460 are set on the same side of the plastic package 500, which is convenient for the layout of the drive circuit.

[0036] The power module in this case has basically the same outer dimensions as the existing Q-DPAK, both can achieve small volume and high-density packaging, and both have top heat dissipation. Since the internal circuit carrier of the present invention includes an insulating layer, there is no need for insulation between the top external metal layer and the heat sink, making installation more convenient and safer.

[0037] The following further introduces the chip selection: When both the upper bridge power chip 200 and the lower bridge power chip 300 are diode chips: Because the diode chip does not include a gate, source, or emitter, there is no connection between the upper bridge gate metal layer (the metal layer used to connect to the upper bridge gate pin 431), the upper bridge source or emitter metal layer (the metal layer used to connect to the upper bridge source or emitter pin 432), the lower bridge gate metal layer (the metal layer used to connect to the lower bridge gate pin 461), and the lower bridge source or emitter metal layer (the metal layer used to connect to the lower bridge source or emitter pin 462) and the power chip. The top surface (i.e., the anode) of the upper bridge power chip 200 is connected to the output metal layer 130 via a bonding wire or copper bridge, and the top surface (i.e., the anode) of the lower bridge power chip 300 is connected to the cathode metal layer 120 via a bonding wire or copper bridge.

[0038] When the upper bridge power chip 200 and the lower bridge power chip 300 are IGBT chips or MOSFET chips: like Figure 1 、 2As shown, the top surface of the upper bridge power chip 200 is also connected to the upper bridge driving pin 430 , and the top surface of the lower bridge power chip 300 is also connected to the lower bridge driving pin 460 .

[0039] Specifically, when the upper bridge power chip 200 is an IGBT chip, the collector of the upper bridge power chip 200 is welded / sintered onto the positive metal layer 110. The gate of the upper bridge power chip 200 is electrically connected to the upper bridge gate metal layer via a bonding wire. The upper bridge gate pin 431 is welded to the upper bridge gate metal layer, thereby electrically connecting to the gate of the upper bridge power chip 200. The emitter on the top surface of the upper bridge power chip 200 is connected to the upper bridge source or emitter metal layer via a bonding wire. The upper bridge source or emitter pin 432 is welded to the upper bridge source or emitter metal layer, thereby electrically connecting the upper bridge source or emitter pin to the emitter of the upper bridge power chip 200. During operation, the upper bridge power chip 200 is turned on and off by applying a voltage between the upper bridge gate pin 431 and the upper bridge source or emitter pin 432. The emitter of the upper bridge power chip 200 is also connected to the output metal layer 130 through a bonding wire or a copper bridge. When the upper bridge power chip 200 is turned on, current flows into the positive pin 410, passes through the positive metal layer 110, the upper bridge power chip 200, the bonding wire or copper bridge, the output metal layer 130, and then flows out from the output pin 470.

[0040] Specifically, when the upper bridge power chip 200 is a MOSFET chip, the drain of the upper bridge power chip 200 is welded / sintered onto the positive electrode metal layer 110. The gate of the upper bridge power chip 200 is electrically connected to the upper bridge gate metal layer via a bonding wire. The upper bridge gate pin 431 is welded to the upper bridge gate metal layer, thereby electrically connecting to the gate of the upper bridge power chip 200. The source on the top surface of the upper bridge power chip 200 is connected to the upper bridge source or emitter metal layer via a bonding wire. The upper bridge source or emitter pin 432 is welded to the upper bridge source or emitter metal layer, thereby electrically connecting the upper bridge source or emitter pin 432 to the source of the upper bridge power chip 200. During operation, the upper bridge power chip 200 is turned on and off by applying a voltage between the upper bridge gate pin 431 and the upper bridge source or emitter pin 432. The source of the upper bridge power chip 200 is also connected to the output metal layer 130 through a bonding wire or a copper bridge. When the upper bridge power chip 200 is turned on, current flows into the positive pin 410, passes through the positive metal layer 110, the upper bridge power chip 200, the bonding wire or copper bridge, the output metal layer 130, and then flows out from the output pin 470.

[0041] Specifically, when the lower-bridge power chip 300 is an IGBT chip, the collector of the lower-bridge power chip 300 is welded / sintered onto the output metal layer 130. The gate of the lower-bridge power chip 300 is electrically connected to the lower-bridge gate metal layer via a bonding wire. The lower-bridge gate pin 461 is welded to the lower-bridge gate metal layer, thereby electrically connecting to the gate of the lower-bridge power chip 300. The emitter on the top surface of the lower-bridge power chip 300 is connected to the lower-bridge source or emitter metal layer via a bonding wire. The lower-bridge source or emitter pin 462 is welded to the lower-bridge source or emitter metal layer, thereby electrically connecting the lower-bridge source or emitter pin 462 to the emitter of the lower-bridge power chip 300. During operation, the lower-bridge power chip 300 is turned on and off by applying a voltage between the lower-bridge gate pin 461 and the lower-bridge source or emitter pin 462. The emitter of the lower bridge power chip 300 is also connected to the negative transition metal layer 121 through a bonding wire or a copper bridge. When the lower bridge power chip 300 is turned on, current flows into the output pin 470, passes through the output metal layer 130, the lower bridge power chip 300, the bonding wire or copper bridge, the negative transition metal layer 121, the current sampling resistor, the negative connection metal layer 122, and then flows out from the negative pin 420.

[0042] Specifically, when the lower bridge power chip 300 is a MOSFET chip, the drain of the lower bridge power chip 300 is welded / sintered onto the output metal layer 130. The gate of the lower bridge power chip 300 is electrically connected to the lower bridge gate metal layer via a bonding wire. The lower bridge gate pin 461 is welded to the lower bridge gate metal layer, thereby electrically connecting to the gate of the lower bridge power chip 300. The source on the top surface of the lower bridge power chip 300 is connected to the lower bridge source or emitter metal layer via a bonding wire. The lower bridge source or emitter pin 462 is welded to the lower bridge source or emitter metal layer, thereby electrically connecting the lower bridge source or emitter pin 462 to the source of the lower bridge power chip 300. During operation, the lower bridge power chip 300 is turned on and off by applying a voltage between the lower bridge gate pin 461 and the lower bridge source or emitter pin 462. The source of the lower bridge power chip 300 is also connected to the negative transition metal layer 121 through a bonding wire or a copper bridge. When the lower bridge power chip 300 is turned on, current flows into the output pin 470, passes through the output metal layer 130, the lower bridge power chip 300, the bonding wire or copper bridge, the negative transition metal layer 121, the current sampling resistor, the negative connection metal layer 122, and then flows out from the negative pin 420.

[0043] In order to further increase the creepage distance, grooves (such as 400, ... Figure 1 as shown) or raised (as Figure 3As shown in the figure, the length of the groove or protrusion (in the horizontal direction in the figure) must be 1 mm or greater, and the width of the groove or protrusion (in the vertical direction in the figure) must be between 0.3 mm and 1.5 mm. In this embodiment, the length of the groove or protrusion is 1.5 mm, and the width of the groove or protrusion is 0.5 mm, resulting in a creepage distance of 7.34 mm. This is not only greater than the 5.56 mm of the existing technology, but also fully meets safety regulations and improves the safety of the power module.

[0044] Figure 1 、 2 The main differences are: 1. The first sampling pin 440 is set at a different position. Figure 1 The first sampling pin 440 is located on the side of the lower bridge driving pin 460 close to the output pin 470. Figure 2 The first sampling pin 440 is located on a side of the lower bridge driving pin 460 away from the output pin 470 .

[0045] 2. The arrangement direction of the lower bridge power chip 300 is different. Figure 1 The middle and lower bridge power chips 300 are arranged on the output metal layer 130 in such a way that the gate of the lower bridge power chip 300 is away from the upper bridge power chip 200. Figure 2 The middle and lower bridge power chips 300 are arranged on the output metal layer 130 in such a direction that the gate of the lower bridge power chip 300 is close to the upper bridge power chip 200 .

[0046] Example 2 The prior art (patent application number 202310508724.6) discloses the internal structure diagram of the module. Since the connection point between the upper bridge power chip 200 and the lower bridge power chip 300 in the prior art is the connection bridge in the middle of the output pin AC, and there is a high voltage between the two top PADs (the parts that carry the power chips) in the prior art, sufficient distance is required in the middle to ensure electrical safety. Therefore, the freewheeling loop in the prior art is longer and the path is narrower.

[0047] In this embodiment, the output metal layer 130 includes an output extension portion 131 and an output chip connection portion 132 that are sequentially connected. Figure 1 、 2 The output extension portion 131 is located above the upper bridge power chip 200. In this embodiment, the output extension portion 131 is located above the upper bridge power chip 200, and the output bonding area 1311 of the output extension portion 131 extends between the upper bridge power chip 200 and the lower bridge power chip 300. Figure 3-5 As shown; the upper bridge power chip 200 and the lower bridge power chip 300 are set close to each other, with a spacing of less than 5 mm, and the bonding wires of the power chips are short, and the metal layer of the circuit carrier 100 is wide, and its width is comparable to the width of the upper bridge power chip (lateral distance), so the freewheeling circuit ( Figure 4 The double-dotted line in the middle is shorter, which greatly reduces the parasitic inductance and parasitic resistance compared to the existing technology, and can fully improve the conversion efficiency of the module.

[0048] like Figure 4-5 As shown, the negative transition metal layer 121 of the negative metal layer 120 is located on the side of the lower bridge power chip 300, and the first sampling pin 440 is connected to the negative transition metal layer 121. Compared to the first embodiment, this solution sets the first sampling pin 440 directly on the metal layer at one end of the current sampling resistor, eliminating the need for bonding wires for sampling, avoiding the influence of bonding wire resistance and chip junction temperature, thereby achieving higher sampling accuracy and simpler internal interconnection of the power module.

[0049] like Figure 5 As shown, to achieve top and bottom flatness for the insulated high-density power module, the pins are arranged symmetrically, with four pins of equal width in each region. Furthermore, during system assembly, the top of the power module contacts and is subjected to pressure from the heat sink. To enhance support strength and evenly distribute pressure, the pins are arranged symmetrically about the longitudinal centerline. In this embodiment, the first sampling pin 440 consists of two pins; however, one pin can be used depending on the circuit layout.

[0050] Example 3 like Figure 3 As shown, the output metal layer 130 includes an output extension portion 131 and an output chip connection portion 132 connected in sequence. The output bonding area 1311 of the output extension portion 131 is located between the upper bridge power chip 200 and the lower bridge power core 300. The width of the output bonding area 1311 gradually widens toward the output pin 470. After the upper bridge power chip 200 is turned on, current flows from the positive pin 410, passes through the positive metal layer 110 and the upper bridge power chip 200, and then flows to the output metal layer 130 through the bonding wire on the top surface of the upper bridge power chip. At this time, the width of the output bonding area 1311 is set to gradually widen toward the output pin 470. This is because the closer the output bonding area 1311 is to the output electrode 470, the greater the current flowing into it. In order to reduce the current density of the output bonding area 1311, this area is set to have a gradually widening structure.

[0051] The negative transition metal layer 121 is provided with a negative bonding region 1211 extending into the output metal layer 130 .

[0052] In the following embodiments, the sampling sensors 600 each utilize a temperature sampling resistor 620. In the present invention, the temperature sampling resistor 620 is positioned at the low voltage end and is located at a relatively large distance from the positive electrode pin 410, the output pin 470, the upper bridge gate pin 431, and the upper bridge source or emitter pin 432 to ensure electrical safety. The bottom surface of the temperature sampling resistor 620 is welded, sintered, or bonded to the negative electrode metal layer 120.

[0053] Example 4 like Figure 8-9 As shown, the negative metal layer 120 is L-shaped and half surrounds the side of the lower bridge power chip 300 . The temperature sampling resistor 620 is disposed on the negative metal layer 120 , close to the first sampling pin 440 .

[0054] The temperature sampling resistor is disposed on the negative metal layer 120 , and the top surface thereof is electrically connected to the first sampling pin 440 via a bonding wire; The lower bridge power chip 300 is electrically connected to the negative metal layer 120 .

[0055] Specifically, the negative electrode metal layer 120 includes: The negative metal layer connecting portion 120A is flush with the positive metal layer 110 and extends to the side of the lower bridge power chip 300; The negative metal layer transition portion 120B extends from the negative metal layer connection portion 120A toward the first sampling pin 440 .

[0056] In this embodiment, the bottom surface of the temperature sampling resistor is welded or sintered to the negative metal layer transition portion (120B), and the top surface is electrically connected to the first sampling pin 440 via a bonding wire; the top surface of the lower bridge power chip 300 is electrically connected to the negative metal layer connection portion 120A and / or the negative metal layer transition portion 120B.

[0057] Since the potential of the second sampling pin 450 is the same as that of the negative pin 420, the second sampling pin 450 and the negative pin 420 are placed side by side and welded together on the negative metal layer 120. When in use, the voltages of the first sampling pin 440 and the second sampling pin 450 can be converted into the same temperature information.

[0058] In addition to bonded temperature sampling resistors, temperature sensors also have welded temperature sampling resistors.

[0059] Figure 8-9 A welding type temperature sampling resistor is used, and the width of the first sampling metal layer used to connect the first sampling pin 440 is widened, and the first sampling metal layer is extended toward the negative pin so as to accommodate the welding type temperature sampling resistor.

[0060] Figure 8In the figure, there are three positive electrode pins 410, two negative electrode pins 420, and one second sampling pin 450, and the number of pins on the left and right sides is equal.

[0061] In order to achieve the flatness of the top and bottom surfaces of the insulated high-density power module, the pins are arranged symmetrically, that is, there are 4 pins of the same width in each area, such as Figure 9 As shown, there are four positive pins 410, three negative pins 420, and one second sampling pin 450, with an equal number of pins on each side. Two first sampling pins 440 are used. Furthermore, during system assembly, the top of the power module contacts the heat sink and is subject to pressure from the heat sink. To increase support strength and evenly distribute pressure, the pins of the power module are arranged symmetrically about the longitudinal centerline. The first sampling pin 440 consists of two pin groups, and either one can be used depending on the circuit layout.

[0062] Example 5 like Figure 10 、 11 As shown, this embodiment is Figure 8 The main difference lies in the orientation of the power chip and the structure of the negative metal layer 120. In this embodiment, the negative metal layer 120 is divided into a negative transition metal layer 121 and a negative connection metal layer 122, which are arranged side by side and spaced apart. The negative pin 420 is arranged on the negative connection metal layer 122, and the negative connection metal layer 122 is electrically connected to the lower bridge power chip 300 via a bonding wire. The second sampling pin 450 is arranged on the negative transition metal layer 121.

[0063] Figure 10 In the embodiment, one end of the temperature sampling resistor 620 is arranged on the negative electrode connection metal layer 122, and the other end is arranged on the negative electrode transition metal layer 121. Figure 10 The width of the negative electrode metal layer 120 is equal to the width of the negative electrode metal layer 120.

[0064] Figure 11 In the embodiment, the temperature sampling resistor 620 is disposed on the negative electrode connection metal layer 122 and is electrically connected to the negative electrode transition metal layer 121 through a bonding wire.

[0065] Example 6 like Figure 12 As shown, an upper bridge power chip connection area is provided in a portion of the output metal layer 130 close to the upper bridge power chip 200; The top surface of the upper bridge power chip 200 is connected to the upper bridge power chip connection area through bonding wires or copper bridges; A lower bridge power chip connection area is provided in a portion of the negative metal layer 120 close to the lower bridge power chip 300 , and the top surface of the lower bridge power chip 300 is connected to the lower bridge power chip connection area via a bonding line or a copper bridge; The upper bridge power chip connection area and the lower bridge power chip connection area are located between the upper bridge power chip 200 and the lower bridge power chip 300; The width of the upper bridge power chip connection area decreases toward the negative metal layer 120 ; The width of the lower bridge power chip connection area decreases toward the lower bridge source or emitter pin 462; The bottom surface of the temperature sampling resistor 620 is welded, sintered or bonded to the negative metal layer 120 , and the top surface of the temperature sampling resistor 620 is connected to the second sampling pin 450 via a bonding wire.

[0066] The sampling pin 1 is welded side by side with the lower bridge source / emitter pin, the sampling pin 1 is welded on the sampling metal layer 1, and the sampling pin 2 is welded side by side with the cathode pin on the cathode connection metal layer; The first sampling pin 440 is adjacent to the lower bridge gate pin 461 or the lower bridge source / emitter pin 462 , both located on the other side of the plastic package opposite to the cathode pin 420 . The second sampling pin 450 is adjacent to the cathode pin 420 .

[0067] Regarding the content disclosed in this case, the following points need to be explained: (1) The drawings of the embodiments disclosed in this case only involve the structures involved in the embodiments disclosed in this case. Other structures can refer to the general design; (2) In the absence of conflict, the embodiments and features of the embodiments disclosed in this case may be combined with each other to form new embodiments; The above are only specific implementation methods disclosed in this case, but the protection scope of this disclosure is not limited thereto. The protection scope disclosed in this case should be based on the protection scope of the claims.

Claims

1. A top heat dissipation power module with sampling function, characterized in that: include: A circuit carrier (100) comprising a positive metal layer (110), a negative metal layer (120), and an output metal layer (130) that are adjacently and spaced apart; at least the back surface of the circuit carrier (100) is exposed outside the plastic package (500); An upper bridge power chip (200) is arranged on the positive metal layer (110) and connected to the output metal layer (130); A lower bridge power chip (300) is arranged on the output metal layer (130) and is connected to the negative electrode metal layer (120); A positive electrode pin (410), one end of which is connected to the positive electrode metal layer (110) and the other end of which extends out from the plastic package (500); A negative electrode pin (420) is located on the same side as the positive electrode pin (410), one end of the pin is connected to the negative electrode metal layer (120), and the other end extends from the plastic package (500); An output pin (470) is provided on the opposite side of the positive electrode pin (410), one end of which is connected to the output metal layer (130) and the other end of which extends out from the plastic package (500); An upper bridge driving pin (430) is arranged adjacent to the output pin (470); The lower bridge driving pin (460) is arranged in the same direction as the output pin (470) and is located on the other side of the negative electrode pin (420) relative to the plastic package (500); A first sampling pin (440) is arranged side by side and adjacent to the lower bridge driving pin (460); A second sampling pin (450) is arranged side by side and adjacent to the negative electrode pin (420); The sampling sensor (600) is arranged on the negative electrode metal layer (120) and is electrically connected to the first sampling pin (440) and the second sampling pin (450) respectively.

2. The top heat dissipation power module with sampling function according to claim 1, characterized in that: The circuit carrier (100) comprises an outer metal layer, an insulating layer and an inner metal layer which are fixedly connected in sequence; The external metal layer is arranged on the other side of the insulating layer relative to the positive metal layer (110), the negative metal layer (120) and the output metal layer (130), and the external metal layer is exposed outside the plastic package (500).

3. The top heat dissipation power module with sampling function according to claim 1, characterized in that: The sampling sensor (600) is a current sampling resistor; The negative electrode metal layer (120) comprises adjacent and spaced apart: A negative electrode connecting metal layer (122) is disposed adjacent to and spaced apart from the side of the positive electrode metal layer (110); a negative electrode transition metal layer (121) disposed between the output metal layer (130) and the negative electrode connection metal layer (122); The two ends of the current sampling resistor are respectively arranged on the negative electrode transition metal layer (121) and the negative electrode connection metal layer (122); The first sampling pin (440) is electrically connected to the negative transition metal layer (121); The second sampling pin (450) and the negative electrode pin (420) are arranged side by side on the negative electrode connection metal layer (122).

4. The top heat dissipation power module with sampling function according to claim 3, characterized in that: The negative electrode transition metal layer (121) is respectively adjacent to and spaced apart from the negative electrode connection metal layer (122), the positive electrode metal layer (110), and the output metal layer (130); The top surface of the lower bridge power chip (300) is electrically connected to the negative transition metal layer (121), and the first sampling pin (440) is electrically connected to the negative transition metal layer (121).

5. The top heat dissipation power module with sampling function according to claim 4, characterized in that: The negative electrode transition metal layer (121) is arranged between the lower bridge power chip (300) and the upper bridge power chip (200), and gradually widens from the output pin (470) toward the negative electrode pin (420); The output metal layer (130) is a metal layer arranged between the lower bridge power chip (300) and the upper bridge power chip (200), gradually narrowing toward the positive electrode pin (410), and is adjacent to and spaced from the negative electrode transition metal layer (121).

6. The top heat dissipation power module with sampling function according to claim 3, characterized in that: The negative electrode transition metal layer (121) is respectively adjacent to the negative electrode connection metal layer (122) and the output metal layer (130) and is spaced apart; The top surface of the lower bridge power chip (300) is electrically connected to the negative transition metal layer (121), and the first sampling pin (440) is connected to the negative transition metal layer (121).

7. The top heat dissipation power module with sampling function according to claim 1, characterized in that: The sampling sensor (600) is a temperature sampling resistor; The negative electrode metal layer (120) is arranged in an "L" shape around the lower bridge power chip (300); The temperature sampling resistor is arranged on the negative electrode metal layer (120), and the top surface is electrically connected to the first sampling pin (440) via a bonding wire; The lower bridge power chip (300) is electrically connected to the negative electrode metal layer (120).

8. The top heat dissipation power module with sampling function according to claim 1, characterized in that: The sampling sensor (600) is a temperature sampling resistor; A second sampling metal layer (120C) is provided on the side of the negative electrode metal gold layer (120) away from the positive electrode metal layer (100); The two ends of the temperature sampling resistor are respectively arranged on the negative electrode metal layer (120) and the second sampling metal layer (120C); The first sampling pin (440) is electrically connected to the negative electrode metal layer (120); The second sampling pin (450) is welded on the second sampling metal layer (120C).

9. The top heat dissipation power module with sampling function according to claim 1, characterized in that: The sampling sensor (600) is a temperature sampling resistor; A second sampling metal layer (120C) is provided on the side of the negative electrode metal gold layer (120) away from the positive electrode metal layer (100); The bottom surface of the temperature sampling resistor is arranged on the negative electrode metal layer (120), and the top surface of the temperature sampling resistor is electrically connected to the second sampling metal layer (120C) via a bonding wire; The first sampling pin (440) is electrically connected to the negative electrode metal layer (120).

10. The top heat dissipation power module with sampling function according to claim 8, characterized in that: The output metal layer (130) comprises: An output extension portion (131) is located between the upper bridge power chip (200) and the lower bridge power chip (300), and is provided with an output bonding area (1311) whose width decreases gradually in the direction of the negative electrode metal layer (120); An output chip connection portion (132), located on the side of the output bonding area (1311); The negative electrode metal layer (120) comprises: A negative transition metal layer (121) is provided between the lower bridge power chip (300) and the upper bridge power module (200), and gradually widens from the output pin (470) toward the negative pin (420); the top surface of the lower bridge power chip (300) is electrically connected to the negative transition metal layer (121), and the first sampling pin (440) is electrically connected to the negative transition metal layer (121); A negative electrode connection metal layer (122) extends from the negative electrode transition metal layer (121) toward the negative electrode pin (420); and the bottom surface of the temperature sampling resistor is arranged on the negative electrode connection metal layer (122).

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