Silicon carbide power module with low stray inductance and double-sided heat dissipation

Abstract

The invention discloses a novel ultra-low stray inductance and double-sided heat dissipation silicon carbide power module. The novel ultra-low stray inductance and double-sided heat dissipation silicon carbide power module comprises a power module assembly, a plastic package body and a double-sided heat dissipation assembly, the power module assembly is formed by connecting a lower bridge assembly and an upper bridge assembly which are oppositely and symmetrically arranged through a molybdenum block. During working, stray inductance in the upper bridge arm and stray inductance in the lower bridge arm are counteracted, and the stray inductance of the whole module is reduced. The power module assembly is divided into an upper layer heat dissipation water channel and a lower layer heat dissipation water channel through the two double-sided heat dissipation assemblies, so that the contact area between cooling liquid and the module is doubled, the heat dissipation capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation columns which are small in area and are distributed more densely are arranged at the bottom of the high-heat chip, the heat dissipation columns which are large in area and small in number are arranged in the low-heat area, the heat dissipation columns are reasonably arranged according to the arrangement of the chip, the situation that the overall heat exchange efficiency is affected due to excessive temperature rise of local cooling liquid is avoided, and therefore the overall heat dissipation effect is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of power modules, and in particular to a high-power density module with three-dimensional chip stacking. Background Art

[0002] Power modules are key components that integrate power electronics technology, primarily consisting of control circuits and power driver circuits. They are commonly used in areas such as motor control, lighting control, and battery management systems. The rapid development of the new energy vehicle industry has led to increasingly stringent requirements for automotive power semiconductors, driving the rapid development of high-power and high-density automotive power semiconductors. Silicon carbide (SiC) power semiconductors, with their superior properties such as high breakdown field strength, high thermal conductivity, and high electron saturation drift rate, show great potential in high-temperature, high-frequency, and high-power density applications. However, traditional 8-parallel SiC module packaging technology generally uses HPD packaging with a single-sided heat dissipation design. The existing module's heat dissipation structure requires applying thermal grease to the DBC board or soldering the DBC to a heat sink substrate to achieve heat conduction. This increases the module's thermal resistance, reduces its heat dissipation capacity, and compromises its current output. This results in a long heat dissipation path and high thermal resistance, making it difficult to effectively dissipate the high heat density generated by the SiC chip. This leads to excessively high module junction temperatures, limiting performance. For example, the heat sink, power electronic equipment and vehicle for a power module disclosed in application number CN202311675084.4.

[0003] At the same time, due to the characteristics of silicon carbide chips themselves, multiple chips are extremely sensitive to circuit inductance when connected in parallel. Under high-frequency switching conditions, the power circuit layout inside the module, such as the positive and negative connectors and interconnection methods, will produce large stray inductance, causing switching voltage spikes and increasing switching losses, which become the main bottleneck for realizing the advantages of SiC high-speed switching.

[0004] The power modules provided in the existing technology still have deficiencies in terms of systematic optimization of heat dissipation structure and power noise. Therefore, there is a need for an integrated double-sided heat dissipation component and an optimized power module component layout to simultaneously meet the requirements of ultra-low noise and high-efficiency double-sided heat dissipation. Summary of the Invention

[0005] In view of this, the present invention provides a silicon carbide power module with low inductance and double-sided heat dissipation to solve the above technical problems.

[0006] A silicon carbide power module with low inductance and double-sided heat dissipation comprises multiple power module assemblies, multiple plastic encapsulation bodies disposed on the power module assemblies, and two double-sided heat dissipation assemblies disposed on the power module assemblies. The power module assemblies include a lower bridge assembly, an upper bridge assembly, multiple molybdenum blocks connecting the lower and upper bridge assemblies, multiple signal terminals disposed on the lower and upper bridge assemblies, an AC copper busbar disposed on the lower bridge assembly, a positive copper busbar disposed on the upper bridge assembly, a negative copper busbar disposed on the lower bridge assembly, and an insulating spacer disposed between the positive and negative copper buses. The lower bridge assembly includes a first DBC board, multiple lower bridge chips disposed on the first DBC board, at least two copper clips disposed on the lower bridge chips, multiple first heat dissipation columns arrayed on the first DBC board, and multiple second heat dissipation columns disposed on the first DBC board. The upper bridge assembly includes a second DBC board, multiple upper bridge chips disposed on the second DBC board, multiple third heat dissipation columns arrayed on the first DBC board, and multiple fourth heat dissipation columns disposed on the second DBC board. The second and first DBC plates are stacked and spaced apart. The upper and lower ends of the molybdenum block are welded to the first DBC plate and the upper bridge chip, respectively. The positive and negative copper bars are parallel and spaced apart, with the insulating gasket located between them. The two double-sided heat dissipation assemblies are respectively disposed on the lower bridge assembly and the upper bridge assembly. The double-sided heat dissipation assembly includes a base and a water channel defined on the end surface of the base facing the power module assembly. The base is sealed against the lower bridge assembly or the upper bridge assembly and covers the water channel. The heat dissipation columns of the lower and upper bridge assemblies are respectively inserted into the water channels of the two double-sided heat dissipation assemblies.

[0007] Furthermore, the first DBC board includes a first ceramic insulating layer, a first lower copper layer arranged on the first ceramic insulating layer, and a first upper copper layer arranged on the first ceramic insulating layer. The first ceramic insulating layer is located between the first upper copper layer and the first lower copper layer. The first upper copper layer is located on the end surface of the first ceramic insulating layer facing the upper bridge component and is used to set the lower bridge chip and the signal terminal. The first lower copper layer is located on the end surface of the first ceramic insulating layer facing away from the upper bridge component and is used to set the first heat dissipation column and the second heat dissipation column.

[0008] Furthermore, the first heat dissipation column, the second heat dissipation column, the third heat dissipation column, and the fourth heat dissipation column are diamond-shaped, the first heat dissipation column and the second heat dissipation column are integrally formed with the first lower copper layer, and the first heat dissipation column and the second heat dissipation column are formed by stamping the first lower copper layer, the third heat dissipation column and the fourth heat dissipation column are integrally formed with the second lower copper layer, and the third heat dissipation column and the fourth heat dissipation column are formed by stamping the second lower copper layer.

[0009] Furthermore, the area of ​​the second heat dissipation column is greater than that of the first heat dissipation column, the first heat dissipation column is arranged corresponding to the lower bridge chip, and the second heat dissipation column is arranged corresponding to the molybdenum block.

[0010] Furthermore, the second DBC board includes a second ceramic insulating layer, a second lower copper layer arranged on the second ceramic insulating layer, and a second upper copper layer arranged on the second ceramic insulating layer, the second upper copper layer is located on the end surface of the second ceramic insulating layer facing the lower bridge component and is used to set the upper bridge chip and the signal terminal, and the second lower copper layer is located on the end surface of the second ceramic insulating layer facing away from the lower bridge component and is used to set the third heat dissipation column and the fourth heat dissipation column.

[0011] Furthermore, the area of ​​the fourth heat dissipation column is greater than that of the third heat dissipation column. The third heat dissipation column is arranged corresponding to the upper bridge chip, and the fourth heat dissipation column is arranged corresponding to the vacant area of ​​the second DBC board.

[0012] Furthermore, the signal terminal, the AC copper busbar, the positive copper busbar, and the negative copper busbar are respectively provided with a through hole, and the through hole is used to allow the molding liquid to flow into the through hole during epoxy molding.

[0013] Furthermore, the double-sided heat dissipation component also includes an inlet arranged at one end of the base, and an outlet arranged at the other end of the base, one end of the inlet passes through the side wall of the base, and the other end is connected to the water channel, one end of the outlet passes through the side wall of the base, and the other end is connected to the water channel, the inlet and the outlet serve as the inlet and outlet of the coolant respectively and are located on both sides of the base, and the arrangement direction of the inlet and the outlet is parallel to the arrangement direction of the multiple power module assemblies.

[0014] Compared with the prior art, the low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the present invention adopts the lower bridge component and the upper bridge component to be symmetrically arranged in opposite directions, so that the upper and lower bridge arms are symmetrically arranged. When the module is working, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other, reducing the stray inductance of the module as a whole and improving the working efficiency of the silicon carbide module. The positive copper bus and the negative copper bus are located on the same side and adopt a laminated design. The current directions of the two are opposite. The magnetic flux generated when they are symmetrically arranged cancel each other, significantly reducing the stray inductance of the DC circuit, and finally achieving an extremely small stray inductance of less than 1.5nH of the silicon carbide module, effectively improving the robust performance of the silicon carbide power module, and releasing a higher working efficiency of the silicon carbide power module. At the same time, the power module assembly can be radiated on both sides and divided into upper and lower layers of heat dissipation water channels through two double-sided heat dissipation components, thereby doubling the contact area between the coolant and the module, improving the heat dissipation capacity of the module, effectively reducing the maximum junction temperature of the silicon carbide module, and improving the working efficiency of the silicon carbide module. The heat sinks are formed directly by stamping the lower copper layer, eliminating the need for thermal grease or a heat sink substrate for heat conduction. The entire lower copper layer acts as a heat sink, directly contacting the coolant for heat exchange, shortening the heat dissipation path and improving heat dissipation efficiency. By placing smaller, more densely distributed heat sinks at the bottom of the high-heat chip, they create a larger effective contact area and concentrate efficient heat exchange. In low-heat areas, larger but fewer heat sinks reduce the contact area with the coolant, preventing localized excessive coolant temperature increases from affecting overall heat exchange efficiency, thereby ensuring overall heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a structural schematic diagram of a silicon carbide power module with low inductance and double-sided heat dissipation provided by the present invention.

[0016] Figure 2 for Figure 1 Schematic diagram of the decomposed structure of the silicon carbide power module with low noise and double-sided heat dissipation.

[0017] Figure 3 for Figure 1 Schematic diagram of the structure of the power module components of the low-noise and double-sided heat dissipation silicon carbide power module, excluding the upper bridge component, positive copper busbar, and insulating gasket.

[0018] Figure 4 for Figure 1 A schematic structural diagram of the power module assembly of the low-noise and double-sided heat dissipation silicon carbide power module from another angle, removing the upper bridge assembly, positive copper bus, and insulating gasket.

[0019] Figure 5 for Figure 1Schematic diagram of the structure of the power module components of the low-noise and double-sided heat dissipation silicon carbide power module, excluding the lower bridge component and negative copper busbar.

[0020] Figure 6 for Figure 1 A schematic structural diagram of the power module assembly of the low-noise and double-sided heat dissipation silicon carbide power module from another angle, removing the lower bridge assembly and the negative copper busbar.

[0021] Figure 7 for Figure 1 A cross-sectional view of a power module assembly of a silicon carbide power module with low inductance and double-sided heat dissipation.

[0022] Figure 8 for Figure 1 Schematic diagram of the structure of the double-sided heat dissipation component of the low-noise and double-sided heat dissipation silicon carbide power module.

[0023] Figure 1: Power module assembly 10, plastic package 20, double-sided heat dissipation assembly 30, lower bridge assembly 11, upper bridge assembly 12, molybdenum block 13, signal terminal 14, AC copper bus 15, positive copper bus 16, negative copper bus 17, insulating gasket 18, first DBC board 111, lower bridge chip 112, copper clip 113, first heat dissipation column 114, second heat dissipation column 115, first ceramic insulating layer 116, first lower copper layer 117, first upper copper layer 118, second DBC board 121, upper bridge chip 122, third heat dissipation column 123, fourth heat dissipation column 124, second ceramic insulating layer 125, second lower copper layer 126, second upper copper layer 127, base 31, water channel 32, inlet 33, outlet 34. DETAILED DESCRIPTION

[0024] The following is a further detailed description of specific embodiments of the present invention. It should be understood that the description of the embodiments of the present invention herein is not intended to limit the scope of protection of the present invention.

[0025] like Figures 1 to 8 As shown, it is a schematic structural diagram of the silicon carbide power module with low noise and double-sided heat dissipation provided by the present invention. The silicon carbide power module with low noise and double-sided heat dissipation includes a plurality of power module assemblies 10, a plurality of plastic packages 20 arranged on the power module assemblies 10, and two double-sided heat dissipation assemblies 30 arranged on the power module assemblies 10. It is conceivable that the silicon carbide power module with low noise and double-sided heat dissipation also includes other functional modules, such as connection components and mounting components, etc., which are technologies well known to those skilled in the art and will not be described in detail here.

[0026] The power module assembly 10 includes a lower bridge assembly 11, an upper bridge assembly 12, a plurality of molybdenum blocks 13 connecting the lower bridge assembly 11 and the upper bridge assembly 12, a plurality of signal terminals 14 arranged on the lower bridge assembly 11 and the upper bridge assembly 12, an AC copper bus 15 arranged on the lower bridge assembly 11, a positive copper bus 16 arranged on the upper bridge assembly 12, a negative copper bus 17 arranged on the lower bridge assembly 11, and an insulating gasket 18 arranged between the positive copper bus 16 and the negative copper bus 17.

[0027] The lower bridge assembly 11 includes a first DBC board 111, a plurality of lower bridge chips 112 arranged on the first DBC board 111, at least two copper clips 113 arranged on the lower bridge chip 112, a plurality of first heat dissipation columns 114 arranged in an array on the first DBC board 111, and a plurality of second heat dissipation columns 115 arranged on the first DBC board 111.

[0028] The first DBC board 111 is a direct-bonded copper (DBC) ceramic substrate. DBCs are made by eutectic sintering a ceramic substrate and copper foil at high temperatures. They are primarily used in power electronic modules and offer excellent thermal conductivity and insulation properties. This first DBC board 111 is currently available and will not be described in detail here. It includes a first ceramic insulating layer 116, a first lower copper layer 117 disposed on the first ceramic insulating layer 116, and a first upper copper layer 118 disposed on the first ceramic insulating layer 116. The first ceramic insulating layer 116 is located between the first upper copper layer 118 and the first lower copper layer 117. The first upper copper layer 118 is located on the end surface of the first ceramic insulating layer 116 facing the upper bridge assembly 12 and is used to mount the lower bridge chip 112 and the signal terminals 14. The first lower copper layer 117 is located on the end surface of the first ceramic insulating layer 116 facing away from the upper bridge assembly 12 and is used to mount the first heat dissipation posts 114 and the second heat dissipation posts 115.

[0029] Eight lower bridge chips 112 are provided and connected in parallel. Four lower bridge chips 112 are arranged in a straight line on either side of the first DBC board 111. A silver paste sintering process is used between the lower bridge chips 112 and the first upper copper layer 118 of the first DBC board 111 to improve heat transfer from the chips. The lower bridge chips 112 themselves are conventional technology, and their structure and operating principle are not further described here.

[0030] The copper Clip 113 connects the lower bridge chip 112 and the first upper copper layer 118 of the first DBC board 111 , and copper strips or copper sheets are used to connect the chip and the terminal by welding, thereby increasing the cross-sectional area through which current flows and reducing the stray inductance of the module.

[0031] The first and second heat dissipation columns 114, 115 are diamond-shaped and are integrally formed with the first lower copper layer 117 by stamping the first lower copper layer 117. This eliminates the need for thermal grease or a heat dissipation substrate for heat conduction. The entire first lower copper layer 117 directly serves as a heat dissipation substrate for heat exchange with the coolant, reducing the number of heat transfers. This directly acts on the first lower copper layer 117, shortening the heat dissipation path and improving heat dissipation efficiency. Since the lower bridge chips 112 are arranged in a straight line on both sides of the first DBC plate 111, and the molybdenum block 13 (which generates less heat) is located in the middle of the first DBC plate 111, a heat dissipation column located at the bottom of the lower bridge chip 112 is provided to ensure that the coolant can concentrate heat exchange. The area of ​​the second heat dissipation column 115 is larger than that of the first heat dissipation column 114. The first heat dissipation column 114 is provided corresponding to the lower bridge chip 112, and the second heat dissipation column 115 is provided corresponding to the molybdenum block 13. This increases the number of heat dissipation columns in areas with high heat generation and also increases the heat dissipation area, ensuring that the coolant has a large contact area in the high-heat generation area and ensuring heat exchange efficiency. In areas with low heat generation, two large heat dissipation columns are used to reduce the contact area with the coolant, preventing the coolant from overheating and thus heating up, thereby preventing the subsequent heat exchange effect.

[0032] The upper bridge assembly 12 includes a second DBC board 121 , a plurality of upper bridge chips 122 arranged on the second DBC board 121 , a plurality of third heat dissipation columns 123 arranged in an array on the first DBC board 111 , and a plurality of fourth heat dissipation columns 124 arranged on the second DBC board 121 .

[0033] The second DBC board 121 has the same composition as the first DBC board 111. The second DBC board 121 includes a second ceramic insulating layer 125, a second lower copper layer 126 disposed on the second ceramic insulating layer 125, and a second upper copper layer 127 disposed on the second ceramic insulating layer 125. The second upper copper layer 127 is located on the end surface of the second ceramic insulating layer 125 facing the lower bridge assembly 11 and is used to mount the upper bridge chip 122 and the signal terminals 14. The second lower copper layer 126 is located on the end surface of the second ceramic insulating layer 125 facing away from the lower bridge assembly 11 and is used to mount the third heat dissipation column 123 and the fourth heat dissipation column 124. The lower bridge assembly 11 and the upper bridge assembly 12 are spaced apart from each other and are both arranged horizontally, so that the upper and lower bridge arms are arranged symmetrically. When the module is working, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other, reducing the overall stray inductance of the module and improving the working efficiency of the silicon carbide module. At the same time, the power module assembly 10 can dissipate heat on both sides and is divided into upper and lower heat dissipation water channels through two double-sided heat dissipation assemblies 30, thereby doubling the contact area between the coolant and the module, improving the heat dissipation capacity of the module, effectively reducing the maximum junction temperature of the silicon carbide module, and improving the working efficiency of the silicon carbide module.

[0034] There are eight upper bridge chips 122 connected in parallel, and four upper bridge chips 122 are arranged in a straight line on the second upper copper layer 127 and two rows are provided. The upper bridge chip 122 is located in the middle of the second upper copper layer 127. The third heat dissipation column 123 and the fourth heat dissipation column 124 are directly formed by stamping the second lower copper layer 126, thereby directly using the entire second lower copper layer 126 as a heat dissipation substrate. The area of ​​the fourth heat dissipation column 124 is larger than that of the third heat dissipation column 123. The third heat dissipation column 123 is arranged corresponding to the upper bridge chip 122, and the fourth heat dissipation column 124 is arranged corresponding to the vacant area of ​​the second DBC board 121, thereby ensuring that the coolant can be concentrated on the heat dissipation column located at the bottom of the upper bridge chip 122. Its function is the same as that of the first heat dissipation column 114 and the second heat dissipation column 115, which is used to ensure that the coolant has a large area of ​​contact with the high-heating area and shorten the heat dissipation path, thereby improving heat dissipation efficiency.

[0035] The upper and lower ends of the molybdenum block 13 are respectively welded to the first upper copper layer 118 and the upper bridge chip 122 . The molybdenum block 13 is used to connect the lower bridge component 11 and the upper bridge component 12 .

[0036] The plurality of signal terminals 14 are connected to the first upper copper layer 118 and the second upper copper layer 127, respectively. These signal terminals 14 function as signal and control terminals for the lower bridge assembly 11 and the upper bridge assembly 12. They are responsible for transmitting control signals from an external control system to the power module, thereby controlling the module's operating state and output power. The signal pins 27 are known from the prior art and are not described in detail here.

[0037] The AC copper busbar 15 is used to output the alternating current converted by the module. One end of the AC copper busbar 15 is connected to the first upper copper layer 118, and the other end extends through the plastic package 20 for connection to an external load. The positive copper busbar 16 and the negative copper busbar 17 are located on the same side. One end of the positive copper busbar 16 is connected to the second upper copper layer 127, and the other end extends through the plastic package 20. The negative copper busbar 17 is connected to the first upper copper layer 118, and the other end extends through the plastic package 20. The positive copper busbar 16 and the negative copper busbar 17 are respectively connected to the negative and positive poles of an external DC power supply, forming a DC circuit to power the module. The positive copper busbar 16 and the negative copper busbar 17 are arranged parallel to each other and spaced apart. This allows them to adopt a stacked design. The currents in the two busbars are in opposite directions. When the currents in the symmetrical arrangement are in opposite directions, the magnetic flux generated by the opposing currents cancels out, reducing the circuit inductance and thus the stray inductance. At the same time, the second DBC board 121 and the first DBC board 111 are also stacked and spaced apart, so that the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other when the module is operating, reducing the stray inductance of the module as a whole and improving the module's operating efficiency. At the same time, the second DBC board 121 and the first DBC board 111 are the same size, and the positive copper busbar 16 and the negative copper busbar 17 are the same size, so that the two are completely symmetrical and further reduce the loop distance. The insulating gasket 18 is located between the positive copper busbar 16 and the negative copper busbar 17 and is used to separate the positive copper busbar 16 and the negative copper busbar 17. A through hole 19 is respectively provided on the signal terminal 14, the AC copper busbar 15, the positive copper busbar 16, and the negative copper busbar 17. The through hole 19 is used to allow the molding liquid to flow into the through hole 19 during epoxy molding, thereby increasing the bonding ability of the molding body 20 after solidification, reducing the internal delamination of the molding shell, and improving the heat transfer inside the module.

[0038] The plastic package 20 is formed by coating the power module assembly 10 with a sealing material such as epoxy resin and then curing it, thereby sealing the gaps between different power terminals to fix their relative positions and achieve electrical isolation.

[0039] The first lower copper layer 117 and the second lower copper layer 126 are exposed from the plastic package 20, so that the heat dissipation column can extend into the double-sided heat dissipation assembly 30. One end of the signal terminal 14, the AC copper busbar 15, the positive copper busbar 16, and the negative copper busbar 17 extends out of the plastic package 20 to facilitate connection with external electrical components.

[0040] The two double-sided heat dissipation assemblies 30 are respectively disposed on the lower bridge assembly 11 and the upper bridge assembly 12. The double-sided heat dissipation assembly 30 includes a base 31, a water channel 32 provided on the end surface of the base 31 facing the power module assembly 10, an inlet 33 provided at one end of the base 31, and an outlet 34 provided at the other end of the base 31.

[0041] The base 31 is sealed against the first lower copper layer 117 or the second lower copper layer 126 and covers the water channel 32 to form a channel for coolant circulation. The heat dissipation columns of the lower bridge assembly 11 and the upper bridge assembly 12 are respectively inserted into the water channels 32 of the two double-sided heat dissipation assemblies 30. One end of the inlet 33 passes through the side wall of the base 31 and communicates with the water channel 32. The other end of the outlet 34 passes through the side wall of the base 31 and communicates with the water channel 32. The inlet 33 and outlet 34 serve as the inlet and outlet of the coolant, respectively, and are located on either side of the base 31. The arrangement of the inlet 33 and outlet 34 is parallel to the arrangement of the multiple power module assemblies 10. After entering the inlet 33, the coolant exchanges heat with the heat dissipation columns inserted in the water channel 32 and then flows out of the outlet 34, thereby exchanging heat with the flowing coolant and removing heat from the chips.

[0042] Compared with the prior art, the low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the present invention adopts the lower bridge component 11 and the upper bridge component 12 to be symmetrically arranged in opposite directions, so that the upper and lower bridge arms are symmetrically arranged. When the module is working, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other, reducing the stray inductance of the module as a whole and improving the working efficiency of the silicon carbide module. The positive copper bus 16 and the negative copper bus 17 are located on the same side and adopt a stacked design. The current directions of the two are opposite. The magnetic flux generated when they are symmetrically arranged cancel each other, significantly reducing the stray inductance of the DC circuit, and ultimately achieving an extremely small stray inductance of less than 1.5nH of the silicon carbide module, effectively improving the robust performance of the silicon carbide power module, and releasing a higher working efficiency of the silicon carbide power module. At the same time, the power module component 10 can dissipate heat on both sides and is divided into upper and lower layers of heat dissipation water channels through two double-sided heat dissipation components 30, thereby doubling the contact area between the coolant and the module, improving the heat dissipation capacity of the module, effectively reducing the maximum junction temperature of the silicon carbide module, and improving the working efficiency of the silicon carbide module. The heat sinks are formed directly by stamping the lower copper layer, eliminating the need for thermal grease or a heat sink substrate for heat conduction. The entire lower copper layer acts as a heat sink, directly contacting the coolant for heat exchange, shortening the heat dissipation path and improving heat dissipation efficiency. By placing smaller, more densely distributed heat sinks at the bottom of the high-heat chip, they create a larger effective contact area and concentrate efficient heat exchange. In low-heat areas, larger but fewer heat sinks reduce the contact area with the coolant, preventing localized excessive coolant temperature increases from affecting overall heat exchange efficiency, thereby ensuring overall heat dissipation.

[0043] The above are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements or improvements within the spirit of the present invention are included in the scope of the claims of the present invention.

Claims

1. A silicon carbide power module with low inductance and double-sided heat dissipation, characterized by: The low-inductance and double-sided heat dissipation silicon carbide power module includes multiple power module components, multiple plastic packaging bodies arranged on the power module components, and two double-sided heat dissipation components arranged on the power module components. The power module components include a lower bridge component, an upper bridge component, multiple molybdenum blocks connecting the lower bridge component and the upper bridge component, multiple signal terminals arranged on the lower bridge component and the upper bridge component, an AC copper busbar arranged on the lower bridge component, a positive copper busbar arranged on the upper bridge component, a negative copper busbar arranged on the lower bridge component, and an insulating gasket arranged between the positive copper busbar and the negative copper busbar. The lower bridge component includes a first DBC board, multiple lower bridge chips arranged on the first DBC board, at least two copper clips arranged on the lower bridge chip, multiple first heat dissipation columns arranged in an array on the first DBC board, and multiple second heat dissipation columns arranged on the first DBC board. The upper bridge component includes a second DBC board, multiple upper bridge chips arranged on the second DBC board, multiple third heat dissipation columns arranged in an array on the first DBC board, and multiple fourth heat dissipation columns arranged on the second DBC board. The second DBC plate and the first DBC plate are stacked and spaced apart, the upper and lower ends of the molybdenum block are respectively welded to the first DBC plate and the upper bridge chip, the positive copper busbar and the negative copper busbar are parallel to each other and spaced apart, the insulating gasket is located between the positive copper busbar and the negative copper busbar, the two double-sided heat dissipation components are respectively arranged on the lower bridge component and the upper bridge component, the double-sided heat dissipation component includes a base and a water channel opened on the end surface of the base facing the power module component, the base is sealed with the lower bridge component or the upper bridge component and covers the water channel, and the heat dissipation columns of the lower bridge component and the upper bridge component are respectively inserted into the water channels of the two double-sided heat dissipation components.

2. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The first DBC board includes a first ceramic insulating layer, a first lower copper layer arranged on the first ceramic insulating layer, and a first upper copper layer arranged on the first ceramic insulating layer. The first ceramic insulating layer is located between the first upper copper layer and the first lower copper layer. The first upper copper layer is located on the end surface of the first ceramic insulating layer facing the upper bridge component and is used to set the lower bridge chip and the signal terminal. The first lower copper layer is located on the end surface of the first ceramic insulating layer facing away from the upper bridge component and is used to set the first heat dissipation column and the second heat dissipation column.

3. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 2, characterized in that: The first heat dissipation column, the second heat dissipation column, the third heat dissipation column, and the fourth heat dissipation column are diamond-shaped, and the first heat dissipation column and the second heat dissipation column are integrally formed with the first lower copper layer, and the first heat dissipation column and the second heat dissipation column are formed by stamping the first lower copper layer.

4. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The area of ​​the second heat dissipation column is greater than that of the first heat dissipation column. The first heat dissipation column is arranged corresponding to the lower bridge chip, and the second heat dissipation column is arranged corresponding to the molybdenum block.

5. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The second DBC board includes a second ceramic insulating layer, a second lower copper layer arranged on the second ceramic insulating layer, and a second upper copper layer arranged on the second ceramic insulating layer. The second upper copper layer is located on the end surface of the second ceramic insulating layer facing the lower bridge component and is used to set the upper bridge chip and the signal terminal. The second lower copper layer is located on the end surface of the second ceramic insulating layer facing away from the lower bridge component and is used to set the third heat dissipation column and the fourth heat dissipation column. The third heat dissipation column and the fourth heat dissipation column are integrally formed with the second lower copper layer, and the third heat dissipation column and the fourth heat dissipation column are formed by stamping the second lower copper layer.

6. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The area of ​​the fourth heat dissipation column is greater than that of the third heat dissipation column. The third heat dissipation column is arranged corresponding to the upper bridge chip, and the fourth heat dissipation column is arranged corresponding to the vacant area of ​​the second DBC board.

7. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The signal terminal, the AC copper bus, the positive copper bus, and the negative copper bus are respectively provided with a through hole, and the through hole is used to allow the molding liquid to flow into the through hole during epoxy molding.

8. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The double-sided heat dissipation component also includes an inlet arranged at one end of the base, and an outlet arranged at the other end of the base. One end of the inlet passes through the side wall of the base, and the other end is connected to the water channel. One end of the outlet passes through the side wall of the base, and the other end is connected to the water channel. The inlet and the outlet serve as the inlet and outlet of the coolant respectively and are located on both sides of the base. The arrangement direction of the inlet and the outlet is parallel to the arrangement direction of the multiple power module assemblies.

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