Radio frequency vector synthesis type phase shifter based on hybrid microstrip line-slot line structure

Abstract

The invention relates to a radio frequency vector synthesis type phase shifter based on a hybrid microstrip line-slot line structure, and belongs to the technical field of active phase shifters, the radio frequency vector synthesis type phase shifter comprises an orthogonal signal generation structure, the orthogonal signal generation structure comprises a hybrid microstrip line-slot line power dividing unit, and a 90-degree fixed phase shifting unit comprises a reference line and a phase shifting line. The two 0 / 180-degree variable phase shift units respectively comprise a third microstrip line, a fifth slot line and a single-pole double-throw switch mechanism, the mixed microstrip line-slot line power division unit is used for dividing an input signal into two same signals, and the slot lines with different lengths of the reference line and the phase shift line are used for enabling the two same signals to generate a 90-degree phase difference; the single-pole double-throw switch is utilized to switch the loading direction of the third microstrip line loaded on the fifth slot line, so that the orthogonal signal with the 90-degree phase difference generates 0 / 180-degree phase shift, and the orthogonal signal generation structure can be designed through a printed circuit board process, thereby reducing the cost of the active vector synthesis type phase shifter.

Description

Technical Field

[0001] The present invention belongs to the technical field of active phase shifters, and in particular relates to a radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure. Background Art

[0002] Phase shifters, as key components in RF circuit design, have significant application value in electromagnetic beam steering systems. Their functions cover cutting-edge fields such as phase-scanned radar arrays, beamforming networks, and new smart antennas. The core mechanism of this device lies in precisely controlling the phase gradient between radiating elements. By reconstructing the radiation field distribution pattern of the antenna array, it achieves beam pointing switching and dynamic reconstruction of the three-dimensional radiation pattern. Faced with the stringent requirements of modern electronic systems for multi-band fusion, ultra-wide angular coverage, and sub-degree pointing accuracy, the development of high-performance new phase shifters with broadband operation, high phase shifting accuracy, and low cost has become a research hotspot in the development of RF technology.

[0003] Phase shifters include passive phase shifters and active vector synthesis phase shifters. Passive phase shifters are designed using printed circuit board technology or integrated circuit technology, such as switch-type phase shifters, reflective phase shifters, and loaded line phase shifters. However, improving the phase shifting accuracy of passive phase shifters often relies on adding phase shifting units. Increasing the phase shifting range can lead to problems such as in-band phase error and poor matching. Active vector synthesis phase shifters include an orthogonal signal generation structure, a variable gain amplifier, and a power synthesis network. The orthogonal signal generation structure generates orthogonal signals, and the variable gain amplifier is used to change the amplitude of the orthogonal signal. Orthogonal signals of different amplitudes can be synthesized to achieve the desired phase shift. The improvement of the phase shifting accuracy of active vector synthesis phase shifters does not rely on the addition of circuit structure. Active vector synthesis phase shifters have performance advantages such as simple implementation principle, compact circuit size, and a certain gain, and have therefore attracted widespread attention and research.

[0004] The orthogonal signal generation structure of existing active vector synthesis phase shifters is mostly implemented using a quadrature all-pass filter network (QAF) or an RC polyphase network (PPF). However, the QAF network includes multiple spiral inductors, capacitors, and resistors, and the RC polyphase network includes multiple resistors and capacitors, both of which are difficult to design using printed circuit board technology. As a result, active vector synthesis phase shifters can only be designed using integrated circuit technology, resulting in high costs. Summary of the Invention

[0005] In view of this, the present invention provides an RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure to address the shortcomings of the prior art. The orthogonal signal generation structure of the present invention outputs orthogonal signals covering four quadrants. The orthogonal signal generation structure can be designed through printed circuit board technology, thereby reducing the cost of the active vector synthesis phase shifter.

[0006] The technical solution of the present invention is: a radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure, including an orthogonal signal generation structure, the orthogonal signal generation structure includes a hybrid microstrip line-slot line power splitter unit, which is used to distribute the input signal into two identical signals, a 90° fixed phase shifter unit including a reference line and a phase shifter line, the reference line and the phase shifter line are respectively connected to the hybrid microstrip line-slot line power splitter unit, the slot lengths of the reference line and the phase shifter line are different, so that the two identical signals produce a 90° phase difference, and two 0 / 180° variable phase shifters respectively include a third A microstrip line, a fifth slot line, and a single-pole double-throw switch mechanism, one end of the two fifth slot lines is connected to the reference line and the phase-shift line respectively, and the two third microstrip lines are respectively loaded perpendicularly at the connection between the fifth slot line and the reference line or the phase-shift line. The single-pole double-throw switch mechanism is connected between the two ends of the third microstrip line to switch the loading direction of the third microstrip line on the fifth slot line, so that the orthogonal signal with a 90° phase difference produces a 0 / 180° phase shift, thereby obtaining orthogonal signals of 0° and 90°, 0° and 270°, 180° and 90°, and 180° and 270°.

[0007] Preferably, the hybrid microstrip line-slot line power splitter unit includes: a first microstrip line, a first slot line and a first isolation resistor, one end of the first microstrip line is an input port, and the other end is short-circuited, the first slot line is arranged directly below the first microstrip line, one end of the first slot line is short-circuited, and the other end is respectively connected to the reference line and the phase-shift line, and the first isolation resistor is connected across one end of the first slot line that is interconnected with the reference line and the phase-shift line.

[0008] Preferably, the reference line includes: a second microstrip line, a second slot line and a fourth slot line, one end of the second slot line is connected to the first slot line, and the other end is connected to one end of the fourth slot line, and the other end of the fourth slot line is connected to one end of one of the fifth slot lines, one end of the second microstrip line is short-circuited, and the other end is vertically loaded on the end where the second slot line and the fourth slot line are connected to each other, and the phase shift line includes: a third slot line, one end of the third slot line is connected to the first slot line, and the other end is connected to one end of another fifth slot line.

[0009] Preferably, the single-pole double-throw switch mechanism includes: a fifth microstrip line, a first diode, a second diode, a first DC bias resistor and a first DC bias voltage, the positive pole of the first diode is connected to one end of the third microstrip line, the negative pole of the second diode is connected to the other end of the third microstrip line, one end of the fifth microstrip line is respectively connected to the negative pole of the first diode and the positive pole of the second diode, and the other end is an output port, one end of the first DC bias resistor is connected to the fifth microstrip line, and the other end is connected to the first DC bias voltage.

[0010] Preferably, the fifth slot line is located in an annular area formed by the third microstrip line and the single-pole double-throw switch mechanism, and the middle portion of the third microstrip line is vertically loaded on the connection between the fifth slot line and the reference line or the phase shift line.

[0011] Preferably, it also includes: two variable gain amplifiers, the variable gain amplifiers including: a second field effect transistor, a third field effect transistor, a fifth DC bias resistor and a seventh DC bias voltage, the two sources of the second field effect transistor are grounded, one source of the third field effect transistor is connected to the drain of the second field effect transistor, and the other source is open, the gate of the third field effect transistor is connected to one end of the fifth DC bias resistor, and the other end of the fifth DC bias resistor is connected to the seventh DC bias voltage.

[0012] Preferably, the variable gain amplifier also includes: a first field effect transistor, a third DC bias resistor, a first inductor, a third DC bias voltage and a fourth DC bias voltage, the two sources of the first field effect transistor are grounded, and its gate is connected to one end of the third DC bias resistor, the drain of the first field effect transistor is connected to one end of the first inductor, the other end of the third DC bias resistor is connected to the third DC bias voltage, and the other end of the first inductor is connected to the fourth DC bias voltage.

[0013] Preferably, the gate of the first field effect tube is connected to the first capacitor, the other end of the first capacitor is connected to the single-pole double-throw switch mechanism, the drain of the first field effect tube is respectively connected to the second capacitor and the third capacitor, the other end of the second capacitor is grounded, the other end of the third capacitor is connected to the gate of the second field effect tube, and the gate of the second field effect tube is connected in series with the fourth DC bias resistor and the fifth DC bias voltage.

[0014] Preferably, the variable gain amplifier also includes: a fourth field effect transistor, a sixth DC bias resistor, a third inductor, an eighth DC bias voltage, and a ninth DC bias voltage, the two sources of the fourth field effect transistor are grounded, and its gate is connected to one end of the sixth DC bias resistor, the drain of the fourth field effect transistor is connected to one end of the third inductor, the other end of the sixth DC bias resistor is connected to the eighth DC bias voltage, and the other end of the third inductor is connected to the ninth DC bias voltage.

[0015] Preferably, the drain of the third field effect transistor is respectively connected to the fourth capacitor, the fifth capacitor and the second inductor, the other end of the fourth capacitor is grounded, the other end of the fifth capacitor is connected to the gate of the fourth field effect transistor, the other end of the second inductor is connected to the sixth DC bias voltage, and the drain of the fourth field effect transistor is sequentially connected to the sixth capacitor and the tenth microstrip line.

[0016] Compared with the prior art, the present invention provides an RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure. The orthogonal signal generation structure is composed of a hybrid microstrip line-slotline power splitter, a 90° fixed phase shifter, and two 0 / 180° variable phase shifters. The hybrid microstrip line-slotline power splitter distributes the input signal into two identical signal outputs. The 90° fixed phase shifter uses slots of different lengths between the reference line and the phase shifter to produce a 90° phase difference between the two identical signals. The 0 / 180° variable phase shifter uses a single-pole double-throw switch to switch the loading direction of the third microstrip line on the fifth slotline, so that the orthogonal signals with a 90° phase difference produce a 0 / 180° phase shift, enabling the orthogonal signal generation structure to output orthogonal signals covering four quadrants. At the same time, the orthogonal signal generation structure can be designed using printed circuit board technology, thereby reducing the cost of the active vector synthesis phase shifter. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 1 is a schematic structural diagram of the vector synthesis phase shifter of the present invention; Figure 2 1 is a schematic structural diagram of a variable gain amplifier according to the present invention; Figure 3 3D full-wave simulation results of gain and echo of the vector synthesis phase shifter of the present invention; Figure 4 This is a three-dimensional full-wave simulation result diagram of the phase shift of the vector synthesis phase shifter of the present invention; Figure 5 This is a three-dimensional full-wave simulation result diagram of the root mean square phase error and root mean square amplitude error of the vector synthesis phase shifter of the present invention. DETAILED DESCRIPTION

[0018] The present invention provides a radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure. Figures 1 to 5 The present invention is described with reference to a structural schematic diagram of FIG.

[0019] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the technical solutions of the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0020] Reference Figure 1 , Figure 1 This is a structural diagram of the vector synthesis phase shifter of this embodiment. A radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure includes an orthogonal signal generation structure 100. The orthogonal signal generation structure 100 includes a hybrid microstrip line-slot line power splitter unit for dividing the input signal into two identical signals. The 90° fixed phase shifter includes a reference line and a phase shifter line. The reference line and the phase shifter are respectively connected to the hybrid microstrip line-slot line power splitter unit. The slot lengths of the reference line and the phase shifter are different so that the two identical signals produce a 90° phase difference. The two 0 / 180° variable phase shifters each include a third microstrip line. 103, a fifth slot line 111 and a single-pole double-throw switch mechanism, one end of the two fifth slot lines 111 is connected to the reference line and the phase-shift line, respectively, the third microstrip line 103 is vertically loaded on the connection between the fifth slot line 111 and the reference line or the phase-shift line, and the single-pole double-throw switch mechanism is connected between the two ends of the third microstrip line 103 to switch the loading direction of the third microstrip line 103 on the fifth slot line 111, so that the orthogonal signal with a 90° phase difference produces a 0 / 180° phase shift, thereby obtaining orthogonal signals of 0° and 90°, 0° and 270°, 180° and 90°, and 180° and 270°.

[0021] In this embodiment, an orthogonal signal generation structure 100 of an RF vector synthesis phase shifter based on a hybrid microstrip-slotline structure is composed of a hybrid microstrip-slotline power splitter, a 90° fixed phase shifter, and two 0 / 180° variable phase shifters. This orthogonal signal generator based on the hybrid microstrip-slotline structure achieves output orthogonal signal coverage of four quadrants. This orthogonal signal generation structure can be designed using printed circuit board technology, reducing the cost of active vector synthesis phase shifters. It also offers the advantages of simple design principles and circuit structure, as well as broadband and high-precision performance.

[0022] Specifically, the 0 / 180° variable phase shift unit composed of the third microstrip line 103 , the fifth slot line 111 and the single-pole double-throw switch mechanism in this embodiment has the advantages of wide phase bandwidth and compact circuit size.

[0023] As a further optimization solution, this embodiment provides a specific structure of a hybrid microstrip line-slot line power splitter unit. The hybrid microstrip line-slot line power splitter unit includes: a first microstrip line 101, a first slot line 107, and a first isolation resistor 123. One end of the first microstrip line 101 is an input port, and the other end is short-circuited. The first slot line 107 is arranged directly below the first microstrip line 101. One end of the first slot line 107 is short-circuited, and the other end is connected to the reference line and the phase-shift line respectively. The first isolation resistor 123 is connected across one end of the first slot line 107 that is interconnected with the reference line and the phase-shift line.

[0024] In this embodiment, the dielectric substrate includes two upper and lower metal layers and a middle dielectric layer. The hybrid microstrip-slotline power splitter utilizes the double-layer metal of the circuit board. The microstrip line is implemented using the upper metal layer, and the slot line is implemented by slotting the lower metal layer. Compared to traditional microstrip circuits that only use the upper metal layer, the hybrid microstrip-slotline circuit fully utilizes the circuit's double metal layer, offering the advantage of compact circuit size. The length and width of the first microstrip line 101 are 22.5 mm and 1.4 mm, respectively. The resistance of the first isolation resistor 123 is 150 ohms. The length and width of the first slotline 107 are 22.5 mm and 0.4 mm, respectively.

[0025] Specifically, the relative dielectric constant of the dielectric substrate is 3.55, and the thickness is 0.508 mm.

[0026] As a further optimization solution, this embodiment provides specific structures of the reference line and the phase-shifting line. The reference line includes: a second microstrip line 102, a second slotline 108, and a fourth slotline 110. One end of the second slotline 108 is connected to the first slotline 107, and the other end is connected to one end of the fourth slotline 110. The other end of the fourth slotline 110 is connected to one end of one of the fifth slotlines 111. One end of the second microstrip line 102 is short-circuited, and the other end is vertically loaded on the end where the second slotline 108 and the fourth slotline 110 are connected to each other. The phase-shifting line includes: a third slotline 109. One end of the third slotline 109 is connected to the first slotline 107, and the other end is connected to one end of another fifth slotline 111.

[0027] In this embodiment, one end of the second slot line 108 is connected to the other end of the first slot line 107, and the other end of the second slot line 108 is connected to one end of the fourth slot line 110. The phase slope is regulated by the second microstrip line 102 loaded on the second slot line 108 and the fourth slot line 110 to achieve broadband phase shift. The length and width of the second microstrip line 102 are 21 mm and 2.5 mm, respectively. The length and width of the second slot line 108 and the fourth slot line 110 are 24.93 mm and 0.12 mm, respectively.

[0028] Specifically, one end of the second slot line 108 and the third slot line 109 is connected to the end of the first slot line 107 away from the short circuit, one end of the second microstrip line 102 is grounded, and the other end is vertically loaded to the interconnection between the second slot line 108 and the fourth slot line 110 through a ground via.

[0029] In this embodiment, one end of the third slot line 109 is connected to the other end of the first slot line 107. Specifically, one end of the first slot line 107, the second slot line 108, and the third slot line 109 are connected to each other. The first isolation resistor 123 is connected across the connection between the first slot line 107, the second slot line 108, and the third slot line 109. One end of the first microstrip line 101 is an input port, and the other end is vertically loaded to the interconnection between the second slot line 108 and the third slot line 109 through a ground via.

[0030] In the above embodiment, the length and width of the third slot line 109 are 61.35 mm and 0.12 mm respectively.

[0031] As a further optimization solution, the specific structure of a single-pole double-throw switch mechanism is provided in this embodiment. The single-pole double-throw switch mechanism includes a fifth microstrip line 105, a first diode 113, a second diode 114, a first DC bias resistor 117 and a first DC bias voltage 121. The anode of the first diode 113 is connected to one end of the third microstrip line 103, the cathode of the second diode 114 is connected to the other end of the third microstrip line 103, one end of the fifth microstrip line 105 is respectively connected to the cathode of the first diode 113 and the anode of the second diode 114, and the other end is an output port. One end of the first DC bias resistor 117 is connected to the fifth microstrip line 105, and the other end is connected to the first DC bias voltage 121.

[0032] In this embodiment, the resistance of the first DC bias resistor 117 is 2 Kohm, the voltage of the first DC bias voltage 121 is ±20 V, and the length and width of the fifth microstrip line 105 are 4.96 mm and 1.2 mm respectively.

[0033] The 0 / 180° variable phase shift unit further includes a first choke inductor 119 , one end of which is connected to the third microstrip line 103 , and the other end is grounded, thereby providing a DC ground for the diode in the single-pole double-throw switch mechanism.

[0034] In this embodiment, the inductance of the first choke inductor 119 is 200 nH, the length and width of the third microstrip line 103 are 47 mm and 1.2 mm respectively, and the length and width of the fifth slot line 111 are 34.5 mm and 0.12 mm respectively.

[0035] As a further optimization solution, in this embodiment, the fifth slot line 111 is located in the annular area formed by the third microstrip line 103 and the single-pole double-throw switch mechanism, and the middle part of the third microstrip line 103 is vertically loaded at the connection between the fifth slot line 111 and the reference line or the phase shift line.

[0036] Specifically, in this embodiment, a 0 / 180° variable phase shift unit is formed by the third microstrip line 103, the fifth slot line 111, and the single-pole double-throw switch mechanism. Specifically, one end of the fifth slot line 111 is short-circuited, and the other end is connected to the end of the fourth slot line 110 away from the second slot line 108. The middle part of the third microstrip line 103 is vertically loaded at the connection between the fifth slot line 111 and the fourth slot line 110.

[0037] Reference Figure 2 , Figure 2 2 is a structural diagram of the variable gain amplifier of this embodiment. As a further optimization solution, the RF vector synthesis phase shifter based on the hybrid microstrip line-slotline structure in this embodiment further includes: two variable gain amplifiers 200, each of which includes: a second field effect transistor 202, a third field effect transistor 203, a fifth DC bias resistor 213, and a seventh DC bias voltage 226. The two sources of the second field effect transistor 202 are grounded, one source of the third field effect transistor 203 is connected to the drain of the second field effect transistor 202, and the other source is open. The gate of the third field effect transistor 203 is connected to one end of the fifth DC bias resistor 213, and the other end of the fifth DC bias resistor 213 is connected to the seventh DC bias voltage 226.

[0038] In this embodiment, the second field-effect transistor 202, the third field-effect transistor 203, the fifth DC bias resistor 213, and the seventh DC bias voltage 226 cooperate to change the amplitude of the orthogonal signal output by the 0 / 180° variable phase shift unit. The seventh DC bias voltage 226 is used to control the gain of the variable gain amplifier 200.

[0039] In this embodiment, a seventh microstrip line 218 is connected to the gate of the second field effect transistor 202 , and a source of the third field effect transistor 203 is connected to the drain of the second field effect transistor 202 via an eighth microstrip line 219 .

[0040] As a further optimization solution, the variable gain amplifier 200 in this embodiment further includes: a first field effect transistor 201, a third DC bias resistor 211, a first inductor 215, a third DC bias voltage 222, and a fourth DC bias voltage 223. The two sources of the first field effect transistor 201 are grounded, and its gate is connected to one end of the third DC bias resistor 211. The drain of the first field effect transistor 201 is connected to one end of the first inductor 215. The other end of the third DC bias resistor 211 is connected to the third DC bias voltage 222. The other end of the first inductor 215 is connected to the fourth DC bias voltage 223.

[0041] In this embodiment, the first field effect transistor 201 , the third DC bias resistor 211 , the first inductor 215 , the third DC bias voltage 222 , and the fourth DC bias voltage 223 cooperate to reduce the impact of gain variation on input port matching.

[0042] Specifically, in the above embodiment, the third DC bias resistor 211 and the third DC bias voltage 222 can provide a gate DC bias for the first field effect transistor 201 , and the first inductor 215 and the fourth DC bias voltage 223 can provide a drain DC bias for the first field effect transistor 201 .

[0043] Specifically, in this embodiment, the drain of the first field effect transistor 201 is connected to an end of the seventh microstrip line 218 away from the second field effect transistor 202 .

[0044] As a further optimization scheme, in this embodiment, the gate of the first field effect transistor 201 is connected to the first capacitor 205, the other end of the first capacitor 205 is connected to the single-pole double-throw switch mechanism, the drain of the first field effect transistor 201 is connected to the second capacitor 206 and the third capacitor 207 respectively, the other end of the second capacitor 206 is grounded, and the other end of the third capacitor 207 is connected to the gate of the second field effect transistor 202. The gate of the second field effect transistor 202 is connected in series with the fourth DC bias resistor 212 and the fifth DC bias voltage 224.

[0045] Specifically, in the above embodiment, the fourth DC bias resistor 212 and the fifth DC bias voltage 224 can provide a gate DC bias for the second field effect transistor 202 .

[0046] In this embodiment, the other end of the first capacitor 205 is the input port of the variable gain amplifier 200. The other end of the first capacitor 205 is connected to the end of the fifth microstrip line 105 away from the third microstrip line 103, and the orthogonal signal output by the orthogonal signal generation structure 100 is input into the variable gain amplifier 200. The first capacitor 205 is used for DC isolation and matching of the input port, and the second capacitor 206 and the third capacitor 207 are used for inter-stage matching of the gain control part composed of the first field effect transistor 201 part and the second field effect transistor 202 and the third field effect transistor 203.

[0047] As a further optimization solution, in this embodiment, the variable gain amplifier 200 also includes a fourth field-effect transistor 204, a sixth DC bias resistor 214, a third inductor 217, an eighth DC bias voltage 227, and a ninth DC bias voltage 228. The two sources of the fourth field-effect transistor 204 are grounded, and its gate is connected to one end of the sixth DC bias resistor 214. The drain of the fourth field-effect transistor 204 is connected to one end of the third inductor 217. The other end of the sixth DC bias resistor 214 is connected to the eighth DC bias voltage 227. The other end of the third inductor 217 is connected to the ninth DC bias voltage 228.

[0048] In this embodiment, the fourth field effect transistor 204 , the sixth DC bias resistor 214 , the third inductor 217 , the eighth DC bias voltage 227 , and the ninth DC bias voltage 228 cooperate to reduce the impact of gain variation on output port matching.

[0049] Specifically, in the above embodiment, the sixth DC bias resistor 214 and the eighth DC bias voltage 227 can provide a gate DC bias for the fourth field effect transistor 204 , and the third inductor 217 and the ninth DC bias voltage 228 can provide a drain DC bias for the fourth field effect transistor 204 .

[0050] As a further optimization scheme, in this embodiment, the drain of the third field-effect transistor 203 is respectively connected to the fourth capacitor 208, the fifth capacitor 209 and the second inductor 216, the other end of the fourth capacitor 208 is grounded, the other end of the fifth capacitor 209 is connected to the gate of the fourth field-effect transistor 204, the other end of the second inductor 216 is connected to the sixth DC bias voltage 225, and the drain of the fourth field-effect transistor 204 is sequentially connected to the sixth capacitor 210 and the tenth microstrip line 221, and the other end of the sixth capacitor 210 is the output port of the variable gain amplifier.

[0051] Specifically, in the above embodiment, the second inductor 216 and the sixth DC bias voltage 225 can provide a drain DC bias for the third field effect transistor 203 .

[0052] In this embodiment, the fourth capacitor 208 and the fifth capacitor 209 are used for inter-stage matching between the gain control part composed of the second field effect transistor 202 and the third field effect transistor 203 and the fourth field effect transistor 204, and the tenth microstrip line 221 is used for output port matching.

[0053] Specifically, in this embodiment, the drain of the third field effect transistor 203 is connected to the fourth capacitor 208 , the fifth capacitor 209 and one end of the second inductor 216 respectively through the ninth microstrip line 220 .

[0054] In this embodiment, the third DC bias resistor 211, the fourth DC bias resistor 212, the fifth DC bias resistor 213, and the sixth DC bias resistor 214 of the variable gain amplifier 200 are all 10 Kohm. The inductance of the first inductor 215 is 6.8 nH, the inductance of the second inductor 216 is 10 nH, and the inductance of the third inductor 217 is 7.5 nH. The capacitance of the first capacitor 205 is 7 pF, the capacitance of the second capacitor 206 is 1 pF, the capacitance of the third capacitor 207 is 0.5 pF, the capacitance of the fourth capacitor 208 is 3 pF, the capacitance of the fifth capacitor 209 is 1 pF, and the capacitance of the sixth capacitor 210 is 4 pF. The voltage of the third DC bias voltage 222 is -0.3 V, and the fourth DC bias voltage 222 is -0.3 V. The voltage of the first DC bias voltage 223 is 3V, the voltage of the fifth DC bias voltage 224 is -0.3V, the voltage of the sixth DC bias voltage 225 is 6V, the seventh DC bias voltage 226 is a gain control voltage, and its voltage adjustment range is -0.3V~0.1V, the voltage of the eighth DC bias voltage 227 is -0.3V, and the voltage of the ninth DC bias voltage 228 is 3V. The length and width of the seventh microstrip line 218 are 1.5mm and 0.5mm respectively, the length and width of the eighth microstrip line 219 are 1.5mm and 0.9mm respectively, the length and width of the ninth microstrip line 220 are 2mm and 0.3mm respectively, and the length and width of the tenth microstrip line 221 are 5.8mm and 1.2mm respectively.

[0055] The variable gain amplifier 200 in the above embodiment has the advantages of wide bandwidth and gain variation range.

[0056] As a further optimization solution, in this embodiment, the RF vector synthesis phase shifter based on the hybrid microstrip line-slotline structure further includes: a Wilkinson power combiner 400, and the Wilkinson power combiner 400 is connected to the two variable gain amplifiers 200 respectively.

[0057] The Wilkinson power combiner 400 in this embodiment has two input ports and one output port. The two input ports are respectively connected to the tenth microstrip line 221 of the variable gain amplifier 200 for power combination.

[0058] Specifically, the Wilkinson power combiner 400 includes an eleventh microstrip line 401 , a twelfth microstrip line 402 , a thirteenth microstrip line 403 , a fourteenth microstrip line 404 and a second isolation resistor 405 .

[0059] Specifically, the eleventh microstrip line 401 is a 50ohm transmission line, one end of the eleventh microstrip line 401 is the first input port of the Wilkinson power combiner 400, and is connected to the sixth capacitor 210 of one of the variable gain amplifiers 200, and the other end of the eleventh microstrip line 401 is respectively connected to the thirteenth microstrip line 403 and one end of the second isolation resistor 405.

[0060] Specifically, the twelfth microstrip line 402 is a 50ohm transmission line, one end of the twelfth microstrip line 402 is the second input port of the Wilkinson power combiner 400, and is connected to the sixth capacitor 210 of another variable gain amplifier 200, and the other end of the twelfth microstrip line 402 is respectively connected to the other end of the fourteenth microstrip line 404 and one end of the second isolation resistor 405.

[0061] Specifically, the other ends of the thirteenth microstrip line 403 and the fourteenth microstrip line 404 are connected to each other, which serve as output ports of the Wilkinson power combiner 400 .

[0062] In the above embodiment, the resistance of the second isolation resistor 405 is 100 ohm, and the length and width of the thirteenth microstrip line 403 and the fourteenth microstrip line 404 are 23.6 mm and 0.65 mm respectively.

[0063] The present invention provides a RF vector synthesis phase shifter based on a hybrid microstrip line-slot line structure, which can achieve a 360° phase shift within 1.7GHz-2.3GHz. Figure 3 The three-dimensional full-wave simulation results of the gain and echo of the vector synthesis phase shifter shown in the figure show that the vector synthesis phase shifter of the present invention has a phase shift in the range of 1.7GHz-2.3GHz (relative bandwidth 30%), a return loss better than 10 dB, and a gain greater than 6.4 dB.

[0064] like Figure 4 The three-dimensional full-wave simulation results of the phase shift of the vector synthesis phase shifter shown in the figure and Figure 5 The three-dimensional full-wave simulation results of the root mean square phase error and root mean square amplitude error of the vector synthesis phase shifter shown in the figure show that the root mean square phase error of the vector synthesis phase shifter of the present invention is better than 4.7° and the root mean square amplitude error is better than 0.61 dB.

[0065] The present invention provides a radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure, which has the advantages of certain gain, wide operating bandwidth, high phase shift accuracy and low cost.

[0066] The above disclosure is only a preferred specific embodiment of the present invention. However, the embodiments of the present invention are not limited thereto. Any changes that can be conceived by those skilled in the art should fall within the scope of protection of the present invention.

Claims

1. A radio frequency vector synthesis phase shifter based on a hybrid microstrip line-slot line structure, characterized in that: include: An orthogonal signal generation structure (100), the orthogonal signal generation structure (100) comprising: Hybrid microstrip line-slot line power splitter unit, used to split the input signal into two identical signals; A 90° fixed phase shift unit includes a reference line and a phase shift line, wherein the reference line and the phase shift line are respectively connected to the hybrid microstrip line-slot line power splitter unit, and the slot line lengths of the reference line and the phase shift line are different so that two identical signals produce a 90° phase difference; Two 0 / 180° variable phase shift units respectively include: a third microstrip line (103), a fifth slot line (111) and a single-pole double-throw switch mechanism, one end of each of the two fifth slot lines (111) is connected to a reference line and a phase shift line respectively, the third microstrip line (103) is respectively vertically loaded on the connection between the fifth slot line (111) and the reference line or the phase shift line, and the single-pole double-throw switch mechanism is connected between the two ends of the third microstrip line (103) to switch the loading direction of the third microstrip line (103) on the fifth slot line (111), so that an orthogonal signal with a 90° phase difference generates a 0 / 180° phase shift, thereby obtaining orthogonal signals of 0° and 90°, 0° and 270°, 180° and 90°, and 180° and 270°.

2. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 1, characterized in that: The hybrid microstrip line-slot line power splitter unit comprises: a first microstrip line (101), a first slot line (107), and a first isolation resistor (123); one end of the first microstrip line (101) is an input port, and the other end is short-circuited; the first slot line (107) is arranged directly below the first microstrip line (101); one end of the first slot line (107) is short-circuited, and the other end is respectively connected to a reference line and a phase-shift line; the first isolation resistor (123) is connected across one end of the first slot line (107) that is connected to the reference line and the phase-shift line.

3. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 2, characterized in that: The reference line includes: a second microstrip line (102), a second slot line (108) and a fourth slot line (110), one end of the second slot line (108) is connected to the first slot line (107), and the other end is connected to one end of the fourth slot line (110), and the other end of the fourth slot line (110) is connected to one end of one of the fifth slot lines (111), one end of the second microstrip line (102) is short-circuited, and the other end is vertically loaded on the end where the second slot line (108) and the fourth slot line (110) are connected to each other, and the phase shift line includes: a third slot line (109), one end of the third slot line (109) is connected to the first slot line (107), and the other end is connected to one end of another fifth slot line (111).

4. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 1, characterized in that: The single-pole double-throw switch mechanism comprises: a fifth microstrip line (105), a first diode (113), a second diode (114), a first DC bias resistor (117), and a first DC bias voltage (121); the anode of the first diode (113) is connected to one end of the third microstrip line (103); the cathode of the second diode (114) is connected to the other end of the third microstrip line (103); one end of the fifth microstrip line (105) is respectively connected to the cathode of the first diode (113) and the anode of the second diode (114); the other end is an output port; one end of the first DC bias resistor (117) is connected to the fifth microstrip line (105); and the other end is connected to the first DC bias voltage (121).

5. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 1, characterized in that: The fifth slot line (111) is located in an annular area formed by the third microstrip line (103) and the single-pole double-throw switch mechanism, and the middle of the third microstrip line (103) is vertically loaded at the connection between the fifth slot line (111) and the reference line or the phase shift line.

6. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 1, characterized in that: Also includes: Two variable gain amplifiers (200), the variable gain amplifiers (200) comprising: a second field effect transistor (202), a third field effect transistor (203), a fifth DC bias resistor (213), and a seventh DC bias voltage (226); two sources of the second field effect transistor (202) are grounded; one source of the third field effect transistor (203) is connected to the drain of the second field effect transistor (202), and the other source is open; the gate of the third field effect transistor (203) is connected to one end of the fifth DC bias resistor (213); and the other end of the fifth DC bias resistor (213) is connected to the seventh DC bias voltage (226).

7. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 6, characterized in that: The variable gain amplifier (200) further comprises: a first field effect transistor (201), a third DC bias resistor (211), a first inductor (215), a third DC bias voltage (222), and a fourth DC bias voltage (223); two sources of the first field effect transistor (201) are grounded, a gate thereof is connected to one end of the third DC bias resistor (211), a drain of the first field effect transistor (201) is connected to one end of the first inductor (215), the other end of the third DC bias resistor (211) is connected to the third DC bias voltage (222), and the other end of the first inductor (215) is connected to the fourth DC bias voltage (223).

8. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 7, characterized in that: The gate of the first field effect tube (201) is connected to a first capacitor (205), the other end of the first capacitor (205) is connected to a single-pole double-throw switch mechanism, the drain of the first field effect tube (201) is respectively connected to a second capacitor (206) and a third capacitor (207), the other end of the second capacitor (206) is grounded, the other end of the third capacitor (207) is connected to the gate of the second field effect tube (202), and the gate of the second field effect tube (202) is sequentially connected in series with a fourth DC bias resistor (212) and a fifth DC bias voltage (224).

9. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 6, characterized in that: The variable gain amplifier (200) further comprises: a fourth field effect transistor (204), a sixth DC bias resistor (214), a third inductor (217), an eighth DC bias voltage (227), and a ninth DC bias voltage (228); two sources of the fourth field effect transistor (204) are grounded, a gate thereof is connected to one end of the sixth DC bias resistor (214), a drain of the fourth field effect transistor (204) is connected to one end of the third inductor (217), the other end of the sixth DC bias resistor (214) is connected to the eighth DC bias voltage (227), and the other end of the third inductor (217) is connected to the ninth DC bias voltage (228).

10. The RF vector synthesis phase shifter based on a hybrid microstrip line-slotline structure according to claim 9, characterized in that: The drain of the third field effect transistor (203) is respectively connected to a fourth capacitor (208), a fifth capacitor (209) and a second inductor (216); the other end of the fourth capacitor (208) is grounded; the other end of the fifth capacitor (209) is connected to the gate of the fourth field effect transistor (204); the other end of the second inductor (216) is connected to a sixth DC bias voltage (225); and the drain of the fourth field effect transistor (204) is sequentially connected to a sixth capacitor (210) and a tenth microstrip line (221).

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