A method and apparatus for packaging a high exhaust chip

Abstract

The application relates to the technical field of semiconductor packaging, and discloses a packaging method and equipment for a strong exhaust chip. The packaging method comprises the following steps: thin film deposition is performed on the surface of a chip body; a porous ceramic substrate is microprocessed to form a mounting groove and an airflow channel; a pretreated body is fixed in the mounting groove based on a preset adhesive; wire bonding is performed on a conductive layer and a conductive path; a plurality of layers of a preset polymer are coated on an electrical connection component; the pre-packaging component is reinforced and filled based on a preset filler; and surface smoothing treatment is performed on the pre-packaging component after the reinforcement and filling, so that the strong exhaust chip is obtained. After the pretreated body is fixed, a silicone-based glue point is used to coat a cofferdam structure and dynamically solidify the cofferdam structure. The cofferdam structure effectively prevents the entry of external pollutants. The combination of wire bonding and the silicone-based glue optimizes the conductive performance of the electrical connection component, and further ensures that the chip can maintain a stable working state in the process of efficient heat dissipation and gas exhaust.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and more specifically, to a packaging method and apparatus for a high-efficiency exhaust chip. Background Technology

[0002] Forced airflow chips, as a crucial component of high-performance electronic devices, are widely used in aerospace, automotive electronics, and industrial control. Their core function is to achieve efficient airflow management and stable electrical connections, ensuring reliable operation in complex environments. With the increasing integration and performance demands of electronic devices, chip packaging technology has become a key factor limiting their performance. Packaging technology must not only guarantee the chip's electrical performance but also consider heat dissipation, mechanical strength, and environmental adaptability. In recent years, the industry has continuously explored high-reliability, low-cost solutions for forced airflow chip packaging to address increasingly demanding application scenarios.

[0003] Existing chip packaging methods mainly fall into two categories: mechanical packaging and surface mount packaging. For chip packaging requiring strong heat dissipation, thermally conductive materials (such as thermally conductive adhesives or resins) are typically used for filling and sealing to fix the chip to the substrate and conduct heat. However, the use of thermally conductive materials in packaging can easily lead to the accumulation of heat and expanding gases inside the package, affecting the chip's heat dissipation performance and consequently its long-term stability and reliability.

[0004] Therefore, there is a need to provide a packaging method and equipment for a chip with strong exhaust to solve the problem that existing chip packaging easily leads to the accumulation of heat and expansion gas inside the package. Summary of the Invention

[0005] The main objective of this invention is to provide a packaging method and apparatus for a high-efficiency exhaust chip, which aims to solve the technical problems mentioned in the background section.

[0006] The present invention adopts the following technical solution:

[0007] A method and apparatus for packaging a high-efficiency exhaust chip, comprising:

[0008] Thin film deposition is performed on the surface of the chip body to form an isolation layer and a protective layer from the inside out, and a conductive layer is sputtered on the electrode area of ​​the chip body to obtain a pre-treated body.

[0009] Micro-machining is performed on a porous ceramic substrate to form mounting grooves and airflow channels, and the surface of the porous ceramic substrate and the inner wall of the mounting groove are metallized to form conductive paths.

[0010] The pre-treated body is fixed to the mounting groove based on a preset adhesive, and the degree of curing is detected. When the preset semi-curing degree is reached, silicone-based adhesive is applied around the pre-treated body to form a dam structure.

[0011] The conductive layer and the conductive path are wire bonded together, and the silicone-based adhesive is injected into the cofferdam structure. The silicone-based adhesive is then dynamically cured to obtain an electrical connection assembly.

[0012] The electrical connection component is coated with multiple layers of a pre-set polymer to obtain a pre-encapsulated component;

[0013] The pre-packaged component is reinforced with a preset filler, and the surface of the reinforced pre-packaged component is smoothed to obtain a high-expansion chip.

[0014] Further, the steps of performing thin film deposition on the surface of the chip body to form an isolation layer and a protective layer sequentially from the inside out, and sputtering a conductive layer on the electrode region of the chip body to obtain a pre-treated body include:

[0015] A chip body for providing a strong exhaust chip is placed in a plasma cleaning device, using a mixed plasma of argon and oxygen as the working medium, for 5 to 10 minutes. The radio frequency power of the plasma cleaning device is set to 100 to 150W.

[0016] The cleaned chip body is subjected to chemical vapor deposition treatment with silane and ammonia to obtain a primary isolation body;

[0017] The primary isolation body is cyclically deposited using trimethylaluminum and water vapor as precursors to form a composite protective body, wherein 0.1 nm of alumina is deposited per cycle, and the cycle is repeated 100 to 200 times.

[0018] A photoresist with a thickness of 1~2μm is coated on the electrode area of ​​the composite protective body, and the electrode area is subjected to mask photolithography based on 365nm ultraviolet light to obtain a patterned protective body.

[0019] A conductive layer is formed by magnetron sputtering of the electrode area of ​​the patterned protective body using a titanium-tungsten alloy target, resulting in a conductive deposition body.

[0020] The conductive layer of the conductive deposited body is etched and refined using chlorine-based plasma to obtain a pretreated body.

[0021] Further, the step of micro-machining the porous ceramic substrate to form mounting grooves and airflow channels, and metallizing the surface of the porous ceramic substrate and the inner wall of the mounting grooves to form conductive pathways, includes:

[0022] An alumina-silica-based ceramic substrate is provided, and the ceramic substrate is subjected to plasma cleaning and high-temperature annealing to form a porous ceramic substrate, wherein the porosity of the porous ceramic substrate is 25% to 35%.

[0023] A structured substrate is obtained by etching mounting grooves and airflow channels on the surface of the porous ceramic substrate using an ultraviolet laser.

[0024] The structured substrate is immersed in a silane coupling agent solution to form active groups, and the surface of the structured substrate is irradiated with ultraviolet light to obtain an activated substrate.

[0025] The activated substrate is subjected to chemical nickel plating to obtain a transition layer substrate, and the transition layer substrate is subjected to copper electroplating to obtain a conductive layer substrate.

[0026] The conductive layer substrate is surface-optimized using an acidic polishing solution, and then annealed in an inert gas atmosphere to obtain the conductive substrate.

[0027] Further, the step of soaking the structured substrate in a silane coupling agent solution to form active groups and irradiating the surface of the structured substrate with ultraviolet light to obtain an activated substrate includes:

[0028] The preparation of the silane coupling agent solution specifically includes using 3-aminopropyltriethoxysilane as the silane coupling agent and a mixture of anhydrous ethanol and deionized water as the solvent, wherein the volume ratio of anhydrous ethanol to deionized water is 9:1 and the volume ratio of silane coupling agent to solvent is 1:10 to 1:15.

[0029] Glacial acetic acid was added to the silane coupling agent solution to adjust the pH value of the silane coupling agent solution to 4.5 to 5.5;

[0030] The structured substrate is placed in the silane coupling agent solution and immersed at room temperature for 1 to 2 hours;

[0031] Remove the soaked structured substrate, rinse it with deionized water, and dry it with nitrogen gas.

[0032] The dried structured substrate was irradiated under a UV light source at a distance of 5-10 cm for 10 to 20 minutes to obtain an activated substrate. The UV light source was a low-pressure mercury lamp with a wavelength of 250 nm to 300 nm and a power density of 10-15 mW / cm². 2 .

[0033] Further, the step of fixing the pretreated body to the mounting groove based on a preset adhesive, detecting the degree of curing, and when a preset semi-cured degree is reached, applying silicone-based adhesive around the pretreated body to form a dam structure includes:

[0034] The electrode area of ​​the pre-processing body is aligned with the conductive path of the mounting groove based on the visual guidance system, and then the pre-processing body and the mounting groove are pre-pressed together.

[0035] A pre-prepared adhesive is dynamically applied to the bottom of the mounting groove using a dispensing device, and the pre-treated body and the porous ceramic substrate are left to stand to obtain a coating assembly. The pre-prepared adhesive contains a marker, and the amount of the marker added is 0.5 to 2.0 wt% of the weight of the pre-prepared adhesive. The marker is at least one of methyl ethyl ketone, methyl isobutyl ketone, and solvent benzene.

[0036] The coating component is placed in a curing device, the curing temperature is set to 100~150°C, and the concentration change data of the marker in the curing device is obtained. When the concentration of the marker meets the preset concentration range, the preset semi-curing degree is reached, the curing device is stopped, and a semi-cured component is obtained. The curing device is equipped with a gas chromatograph or volatile organic compound detection device.

[0037] Silicone-based adhesive is applied around the pre-treated body using a dispensing device, and the surface of the applied silicone-based adhesive is leveled to obtain a cofferdam prefabricated component.

[0038] The cofferdam prefabricated components are placed in the curing equipment, the curing temperature is set to 80~120°C, and the cofferdam is cured in a vacuum environment for 20 to 30 minutes to obtain the cofferdam structure.

[0039] Further, the steps of wire bonding the conductive layer to the conductive path, injecting the silicone-based adhesive into the cofferdam structure, and then dynamically curing the silicone-based adhesive to obtain the electrical connection assembly include:

[0040] The conductive layer and the conductive path are wire bonded using ultrasound to obtain a preliminary connection structure;

[0041] The preliminary connection structure is optimized by thermo-press bonding to complete the electrical connection between the chip body and the porous ceramic substrate;

[0042] Silicone-based adhesive is injected into the cofferdam structure by a dispensing device using a dotting method, with the injection volume set to 30% of the volume of the cofferdam structure. Subsequently, additional silicone-based adhesive is injected into the cofferdam structure by a continuous injection method, with the injection volume being 70% of the volume of the cofferdam structure.

[0043] Based on the rotating device, the filled silicone adhesive is first pre-cured at a first rotation speed and a preset low temperature, and then the pre-cured silicone adhesive is fully cured at a second rotation speed and a preset high temperature to obtain an electrical connection component.

[0044] Further, the step of coating the electrical connection component with multiple layers of a preset polymer to obtain a pre-encapsulated component includes:

[0045] The electrical connection assembly is placed in a spin coating apparatus and a primary spin coating process is performed based on a polyimide-based polymer to obtain a single-layer assembly.

[0046] The single-coat component is surface-activated using plasma to obtain an activated coating component.

[0047] The activated coating assembly is placed in a spin coating device, and a second spin coating process is performed on the activated coating assembly based on the modified epoxy polymer to obtain a double-layer coating assembly.

[0048] The double-layer coating assembly is placed in a curing device and heated to 90°C at a heating rate of 2°C / min and held at that temperature for 20-40 minutes to obtain a pre-cured coating assembly.

[0049] Based on the curing equipment, the pre-cured coating assembly is heated at 160°C for 20-30 minutes in a vacuum environment for deep curing treatment, and then the pre-cured coating assembly is cooled to room temperature at a rate of 1.5°C / minute to obtain the deep-cured coating assembly.

[0050] A pre-encapsulated component is obtained by depositing a hydrophobic protective layer on the surface of the deep-curing coating component using a fluorinated silane polymer.

[0051] Further, the step of reinforcing the pre-packaged component with a preset filler and then smoothing the surface of the pre-packaged component after reinforcing filling to obtain a high-expansion chip includes:

[0052] The pre-encapsulated component is filled with a preset filler under low pressure to obtain a primary filled component. The preset filler is composed of alumina particles with a particle size of 15-25 nanometers and modified epoxy resin mixed at a mass ratio of 1:5. The filling injection speed is set to 0.1-0.2 ml / s.

[0053] The primary filling component is subjected to segmented thermosetting based on a curing device to obtain a cured and reinforced component, and the surface of the cured and reinforced component is etched based on argon plasma to obtain a flat preparatory component.

[0054] The surface of the flattening preparation component is polished using helium plasma. During the polishing process, the flattening preparation component is simultaneously rotated at 10 revolutions per minute by a rotating device to obtain a smooth surface component.

[0055] The smooth surface component is subjected to gradient cooling to obtain a stable structural component;

[0056] The stable structural component is atomized and sprayed with a fluoropolymer solution, and then dried at 60°C for 10-15 minutes to obtain a strong exhaust chip.

[0057] The present invention also provides a packaging apparatus for a high-pressure exhaust chip, comprising:

[0058] A base, wherein the upper end surface of the base is provided with a first moving mechanism that moves along the X-axis direction;

[0059] A rotating device, wherein the rotating device is provided with a rotating disk, and the rotating disk is rotatably connected to the drive end of the moving mechanism via a hydrodynamic bearing;

[0060] A dispensing device, wherein the dispensing device is connected to the base via a second moving mechanism, and the dispensing device is disposed above the rotating disk;

[0061] A clamping device is connected to the drive end of the second moving mechanism and is disposed on one side of the dispensing device for fixing the pretreatment body to the mounting groove.

[0062] Furthermore, the second moving mechanism includes a support frame, the support frame is provided with a first slide rail group extending along the Y-axis, the first slide rail group is slidably connected to a sliding frame, one side of the sliding frame is provided with a second slide rail group extending along the X-axis, the second slide rail group is slidably connected to a lifting seat, the end face of the lifting seat facing away from the second slide rail group is provided with a lifting frame extending along the Z-axis, the dispensing device and the pressing device are both fixedly connected to the lifting frame, and the lifting frame is also connected to a vision guidance system for guiding the dispensing device and the pressing device;

[0063] The clamping device further includes an electric push rod and a clamping head. The electric push rod is fixedly connected to the lifting frame, and the clamping head is connected to the output end of the electric push rod. A pressure sensor is provided between the output end of the electric push rod and the clamping head.

[0064] The dispensing device includes a dispensing needle tube, the bottom end of which is disposed on the same plane as the bottom end of the pressing head.

[0065] Beneficial effects:

[0066] In this invention, multilayer thin-film deposition technology and precise microfabrication processes effectively enhance the chip's heat dissipation performance and airflow management capabilities. An isolation layer and a protective layer are sequentially deposited on the surface of the chip body, and a conductive layer is sputtered in the electrode area, forming a pre-treated body with high electrical performance and protection. A porous ceramic substrate is microfabricated to form mounting grooves and airflow channels, and then metallized to establish a stable conductive path. This not only ensures excellent electrical transmission but also optimizes heat dissipation and gas emission through the airflow channels, preventing the accumulation of heat and gas. Furthermore, after the pre-treated body is fixed, a dam structure is applied using silicone-based adhesive and dynamically cured, greatly improving the chip's packaging reliability and environmental adaptability. The dam structure effectively prevents the entry of external contaminants, and the combination of wire bonding and silicone-based adhesive optimizes the conductivity of the electrical connection components, further ensuring that the chip maintains a stable operating state during efficient heat dissipation and gas emission. Ultimately, by coating and reinforcing the filling process with multiple layers of pre-set polymers, the mechanical strength and surface flatness of the chip are improved, enabling the packaging method to work stably for a long time even in demanding environments, greatly improving the chip's reliability, durability, and efficiency. Attached Figure Description

[0067] Figure 1 This is a schematic diagram of the packaging method steps for a strong exhaust chip according to the present invention;

[0068] Figure 2 This is a schematic diagram of the overall structure of a packaging device for a high-efficiency exhaust chip according to the present invention;

[0069] Figure 3 yes Figure 2 Enlarged structural diagram at point A;

[0070] The components include: 1. Base; 2. First moving mechanism; 3. Rotary disk; 4. Dispensing device; 41. Dispensing needle; 5. Second moving mechanism; 51. Support frame; 52. First slide rail; 53. Sliding frame; 54. Second slide rail assembly; 55. Lifting seat; 56. Lifting frame; 6. Pressing device; 61. Electric push rod; 62. Pressing head; 63. Pressure sensor; 7. Visual guidance system.

[0071] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0072] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0073] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0074] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, a direct connection, or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0075] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0076] Reference Figure 1 This invention proposes a packaging method for a high-efficiency exhaust chip, comprising:

[0077] S1: Thin film deposition is performed on the surface of the chip body to form an isolation layer and a protective layer from the inside out, and a conductive layer is sputtered on the electrode area of ​​the chip body to obtain a pre-treated body;

[0078] In step S1, the chip body undergoes surface thin film deposition and patterning to obtain a pre-processed chip body. Specifically, a high-expansion chip body is selected, comprising functional and electrode regions. A silicon nitride thin film with a thickness of 0.5–1 μm is deposited on the chip body surface using plasma-enhanced chemical vapor deposition (PECVD) to form an isolation layer. This layer effectively isolates external moisture and ion erosion, improving the chip's electrical stability. An alumina thin film of approximately 10–20 nm thick is deposited on the isolation layer using atomic layer deposition (ALD) technology to form a protective layer. The high density of alumina further enhances corrosion resistance while maintaining low thermal stress. Subsequently, the electrode regions are magnetron sputtered to deposit a 200–300 nm thick alloy layer as a conductive layer. The alloy can be a titanium-tungsten alloy, which has excellent conductivity and adhesion. Electrode patterns are generated using photolithography and dry etching, based on a 0.1 μm resolution photolithography algorithm. An etching rate model (error ±4%) is used to precisely control the etching depth, ensuring the patterning accuracy of the conductive layer. The final pre-processed body includes an isolation layer, a protective layer, and a patterned conductive layer. Its structure significantly improves the chip's environmental adaptability and electrode connection reliability. Through the synergistic effect of multiple thin films, it not only optimizes the chip's electrical performance but also enhances its long-term operational stability, making it particularly suitable for high-humidity or high-temperature applications requiring strong exhaust.

[0079] S2: Micro-machining is performed on the porous ceramic substrate to form mounting grooves and airflow channels, and the surface of the porous ceramic substrate and the inner wall of the mounting groove are metallized to form conductive paths.

[0080] In step S2, the porous ceramic substrate is micro-machined and metallized to obtain a conductive substrate. An alumina-based porous ceramic substrate with a porosity of 25%–35% is selected, as its high porosity facilitates airflow dissipation. Micromachining is performed using a femtosecond laser with a wavelength of 1030 nm and a power of 5 W. Based on three-dimensional geometric modeling, mounting grooves with a depth of 60–120 μm and airflow channels with a diameter of 0.2–0.6 mm are fabricated. The grooves are used to fix the chip, and the channels ensure efficient airflow. Subsequently, chemical plating is performed on the substrate surface and the inner walls of the grooves to deposit a 1–2 μm thick nickel layer as a transition layer, improving the adhesion of subsequent plating layers. Then, a 6–12 μm thick copper layer is deposited by electroplating to form a conductive path. The copper layer has excellent conductivity, meeting the high current requirements. Finally, laser-induced annealing is performed, and the annealing depth is optimized using a thermal diffusion model (error ±1.5 μm) to improve the stability of the copper layer's crystal structure. The resulting conductive substrate integrates mounting grooves, airflow channels, and conductive paths, ensuring precise chip mounting and efficient airflow. At the same time, the low resistance of the conductive paths supports stable electrical signal transmission.

[0081] S3: Fix the pre-treated body to the mounting groove based on the preset adhesive, and detect the degree of curing. When the preset semi-curing degree is reached, apply silicone-based adhesive around the pre-treated body to form a dam structure.

[0082] In step S3, the pre-processed body is fixed to the conductive substrate and a dam structure is constructed to obtain the fixed assembly. Specifically, using a high-precision mounting device, the pre-processed body from step S1 is placed in the mounting groove of the conductive substrate from step S2, and an image recognition algorithm (positioning accuracy ±4μm) is used to ensure precise alignment of the functional areas with the airflow channels. A 15-25μm thick layer of modified epoxy resin adhesive, which has excellent bonding strength and heat resistance, is applied to the bottom of the groove. Hot-press curing is then performed, and the semi-curing time is calculated to achieve 50%-60% curing to ensure the initial stability of the adhesive and compatibility with subsequent processes. Silicone-based adhesive is dotted around the pre-processed body to form a dam structure with a height of 60-120μm. The dotting trajectory is optimized using a fluid simulation algorithm (deviation ±2μm) to ensure the uniformity and sealing of the dam structure. Finally, the dam structure is vacuum pre-cured to enhance its mechanical strength. The resulting fixed assembly comprises a firmly fixed pre-processed body and a dam structure. The dam effectively prevents the filler material from overflowing while protecting the chip edges from mechanical damage.

[0083] S4: Wire bond the conductive layer to the conductive path, inject the silicone-based adhesive into the cofferdam structure, and then dynamically cure the silicone-based adhesive to obtain an electrical connection component;

[0084] In step S4, wire bonding and protective filling are performed on the fixing component to obtain the electrical connection component. Ultrasonic wire bonding technology is used, employing 20μm diameter conductive metal wires to connect the conductive layer of the pretreated body to the conductive path of the conductive substrate, ensuring a contact resistance of less than 0.08Ω and achieving a low-loss electrical connection. Subsequently, silicone-based adhesive is injected into the dam structure, with an injection volume of 65%~75% of the dam volume, while avoiding the formation of bubbles or voids. The injected silicone-based adhesive is dynamically cured to form a protective layer with a thickness of 40~60μm. This layer has excellent flexibility and heat resistance, effectively buffering external stress. The resulting electrical connection component includes an electrically connected chip-substrate structure and a protective layer. Its structure ensures stable transmission of electrical signals, while the protective layer effectively isolates external environmental factors such as moisture and dust. Through high-reliability bonding and uniform filling processes, the electrical performance and environmental adaptability of the chip are significantly improved.

[0085] S5: Coat the electrical connection component with multiple layers of a preset polymer to obtain a pre-encapsulated component;

[0086] In step S5, the electrical connection component undergoes multi-layer polymer coating and curing to obtain a pre-packaged component. A 50-100 μm thick polyimide-based polymer is coated using spin coating technology to form a first protective coating. The spin coating speed is optimized to ensure coating smoothness. The high heat resistance and mechanical strength of polyimide effectively protect the internal structure. The first protective coating is further activated by argon plasma to improve surface adhesion. A second spin coating of 30-80 μm thickness is then applied, with coating uniformity optimized using a rheological model. The two coatings are cured in stages. The first stage ensures an initial curing rate ≥60%, and the second stage optimizes the curing depth based on a thermal conductivity model to ensure coating structural stability. The resulting pre-packaged component is an electrical connection component containing a multi-layer polymer coating. Its dual-layer coating structure significantly improves the chip's resistance to moisture, corrosion, and mechanical shock. Through the synergistic protection of the multi-layer polymer, the chip's environmental adaptability and long-term reliability are optimized.

[0087] S6: The pre-packaged component is reinforced with a preset filler, and the surface of the reinforced pre-packaged component is smoothed to obtain a strong exhaust chip.

[0088] In step S6, the pre-packaged component undergoes functional enhancement filling and surface smoothing treatment to obtain a fully packaged high-efficiency exhaust chip. A micro-filling process is performed between the substrate and the coating, using a functional enhancement material. The injection path is optimized based on a permeation kinetic model using a vacuum-assisted injection process to ensure uniform filling and significantly improve the thermal conductivity and mechanical strength of the structure. The filler material undergoes gradient curing, with the shrinkage rate controlled to ≤2% in the first stage and structural stability enhanced in the second stage. Subsequently, helium plasma polishing is used, with polishing time calculated based on surface roughness to improve surface smoothness. Finally, the cooling curve is optimized by controlled-speed cooling to avoid thermal stress concentration. The resulting high-efficiency exhaust chip comprises a chip-substrate structure with multi-layer polymer protection and functional enhancement filling. Its optimized thermal conductivity, mechanical strength, and surface quality significantly improve the chip's exhaust efficiency and durability. This ensures stable operation of the chip under high load and high temperature environments, meeting the stringent requirements of high-efficiency exhaust applications.

[0089] In one embodiment, the steps of performing thin film deposition on the surface of the chip body to form an isolation layer and a protective layer sequentially from the inside out, and sputtering a conductive layer on the electrode region of the chip body to obtain a pre-treated body include:

[0090] A chip body for providing a strong exhaust chip is placed in a plasma cleaning device, using a mixed plasma of argon and oxygen as the working medium, for 5 to 10 minutes. The radio frequency power of the plasma cleaning device is set to 100 to 150W.

[0091] The cleaned chip body is subjected to chemical vapor deposition treatment with silane and ammonia to obtain a primary isolation body;

[0092] The primary isolation body is cyclically deposited using trimethylaluminum and water vapor as precursors to form a composite protective body, wherein 0.1 nm of alumina is deposited per cycle, and the cycle is repeated 100 to 200 times.

[0093] A photoresist with a thickness of 1~2μm is coated on the electrode area of ​​the composite protective body, and the electrode area is subjected to mask photolithography based on 365nm ultraviolet light to obtain a patterned protective body.

[0094] A conductive layer is formed by magnetron sputtering of the electrode area of ​​the patterned protective body using a titanium-tungsten alloy target, resulting in a conductive deposition body.

[0095] The conductive layer of the conductive deposited body is etched and refined using chlorine-based plasma to obtain a pretreated body.

[0096] In the above embodiments, a strongly vented chip body is provided. The chip body includes functional areas and electrode areas. Trace amounts of organic contaminants or oxides may exist on its surface. The chip body undergoes plasma cleaning treatment using a mixed plasma of argon and oxygen in a cavity with a vacuum of 0.1~0.5 Pa. The radio frequency power is controlled at 100~150W for 5~10 minutes to remove surface impurities. During the process, the change in hydrophilicity of the chip surface is monitored in real time. Cleaning is considered complete when the contact angle is less than 10°, resulting in a clean chip body. This clean chip body has no residual contaminants on its surface, providing a high-adhesion substrate for subsequent thin film deposition.

[0097] A clean chip substrate is subjected to plasma-enhanced chemical vapor deposition (PECVD). Silane and ammonia gases are introduced into the reaction chamber, and the chamber temperature is controlled at 250–300°C, while the gas pressure is 1–2 Torr. A silicon nitride thin film with a thickness of 0.5–1 μm is deposited as an isolation layer. The deposition process uses interference spectral signals to calculate the film growth rate, with an error controlled within ±2 nm / min, ensuring that the silicon nitride film uniformly covers the functional and electrode areas, resulting in a primary isolation substrate. This primary isolation substrate possesses electrical insulation and corrosion resistance.

[0098] The primary isolation substrate is subjected to atomic layer deposition (ALD). Trimethylaluminum and water vapor are sequentially introduced into the cavity as precursors, and the temperature is controlled at 150–200°C. 0.1 nm of alumina is deposited per cycle, and this process is repeated 100–200 times to form an alumina film with a thickness of 10–20 nm as a protective layer. During deposition, the pulse-to-purge time ratio is dynamically adjusted based on the precursor pulse duration, with an error controlled within ±0.5 s, ensuring the density of the protective film and its adhesion to the silicon nitride isolation layer. This results in a composite protective substrate with high chemical stability and resistance to moisture penetration.

[0099] The electrode area of ​​the composite protective body is subjected to mask photolithography, coated with photoresist with a thickness of 1~2μm, and exposed to ultraviolet light at a wavelength of 365nm. An opening pattern for the electrode area is generated based on a photolithography algorithm with a resolution of 0.1μm. After exposure, development and hard baking are performed, and the concentration of the developer is monitored in real time, and the development time is adjusted in real time with an error controlled within ±1s. The photoresist and part of the alumina film in the electrode area are removed to expose the underlying silicon nitride isolation layer, resulting in a patterned protective body. This patterned protective body forms a precise deposition window in the electrode area, providing positioning for the deposition of the conductive layer.

[0100] The electrode areas of the patterned protective body are subjected to magnetron sputtering at a vacuum level of 10. Within a 4 Pa ​​chamber, a titanium-tungsten alloy target is used, and the sputtering power is controlled at 200~300 W to deposit a titanium-tungsten alloy layer with a thickness of 200~300 nm as a conductive layer. During sputtering, the growth of the alloy layer is monitored using a crystal oscillator thickness gauge, with the error controlled within ±5 nm, to ensure that the conductive layer covers the electrode area and is aligned with the patterned window, thereby obtaining a conductive deposition body and forming a highly conductive metal layer.

[0101] The conductive layer of the conductive deposited substrate undergoes dry etching refinement using chlorine-based plasma. The etching chamber pressure is controlled at 0.01~0.05 Torr, and the power at 50~100W. Excess portions at the edges of the conductive layer are removed, forming an electrode pattern with a linewidth error of less than 0.05μm. During the etching process, the plasma spectrum is analyzed by endpoint detection to determine the etching endpoint, resulting in a pre-treated substrate. The pre-treated substrate includes a silicon nitride isolation layer, an alumina protective layer, and a patterned titanium-tungsten conductive layer, exhibiting excellent electrical properties and structural stability, suitable for subsequent processes in high-expansion chip packaging.

[0102] In one example, the step of micromachining a porous ceramic substrate to form mounting grooves and airflow channels, and metallizing the surface of the porous ceramic substrate and the inner wall of the mounting grooves to form conductive pathways, includes:

[0103] An alumina-silica-based ceramic substrate is provided, and the ceramic substrate is subjected to plasma cleaning and high-temperature annealing to form a porous ceramic substrate, wherein the porosity of the porous ceramic substrate is 25% to 35%.

[0104] A structured substrate is obtained by etching mounting grooves and airflow channels on the surface of the porous ceramic substrate using an ultraviolet laser.

[0105] The structured substrate is immersed in a silane coupling agent solution to form active groups, and the surface of the structured substrate is irradiated with ultraviolet light to obtain an activated substrate.

[0106] The activated substrate is subjected to chemical nickel plating to obtain a transition layer substrate, and the transition layer substrate is subjected to copper electroplating to obtain a conductive layer substrate.

[0107] The conductive layer substrate is surface-optimized using an acidic polishing solution, and then annealed in an inert gas atmosphere to obtain the conductive substrate.

[0108] In the above embodiments, the porous ceramic substrate composed of alumina and silica composite material is pretreated, including removing surface impurities and adjusting the pore distribution through plasma cleaning and high-temperature annealing processes. This results in a uniform microstructure on the substrate surface and maintains a porosity between 25% and 35%, yielding a uniform porous ceramic substrate. Specifically, the substrate surface is first bombarded with plasma under low pressure to remove organic residues and particulate contaminants. Subsequently, the substrate is annealed at high temperature under inert gas protection. By controlling the heating rate and holding time, the internal pore structure of the substrate is stabilized, ensuring the uniformity of subsequent microfabrication and metallization processes.

[0109] A homogenized porous ceramic substrate is precision micro-machined by using a high-precision ultraviolet laser to etch mounting grooves and airflow channels onto the substrate surface, resulting in a structured substrate. During the micro-machining process, the laser operates in a short-pulse mode, and the laser focus trajectory is controlled by a three-dimensional CNC platform to form mounting grooves with a depth of 60 to 120 micrometers and airflow channels with a diameter of 0.2 to 0.6 millimeters on the substrate. At the same time, by adjusting the laser energy and scanning speed, it is ensured that the inner walls of the grooves and channels are smooth and free of cracks, so that the surface and pore structure of the structured substrate remain intact.

[0110] The surface, grooves, and inner walls of the structured substrate are subjected to surface activation treatment. Active groups are introduced onto the substrate surface through chemical solution immersion and ultraviolet light irradiation, resulting in an activated substrate. The activation process begins by immersing the structured substrate in a solution containing a silane coupling agent, causing a chemical reaction between the ceramic material on the substrate surface and inner walls and the solution to form hydroxyl groups and organic functional groups. Subsequently, ultraviolet light irradiation further enhances the distribution density of the surface active groups, thereby improving the adhesion of metallized deposits to the substrate surface.

[0111] The surface, grooves, and inner walls of the activated substrate are electroless nickel-plated to deposit a nickel metal layer with a thickness of 1.5 to 3 micrometers on the substrate surface, resulting in a transition layer substrate. The activated substrate is then placed in a plating bath containing nickel salt and a reducing agent. A nickel layer is uniformly deposited on the substrate surface and inner walls through a chemical reaction in the solution. The temperature, pH value, and stirring rate of the plating bath are controlled to ensure a consistent nickel layer thickness and tight adhesion to the substrate, providing good conductivity and an effective adhesion interface. Copper is then electroplated onto the nickel layer surface of the transition layer substrate, depositing a copper metal layer with a thickness of 6 to 12 micrometers, resulting in a conductive layer substrate. Specifically, the transition layer substrate is placed as a cathode in a copper salt-containing electrolyte. A stable current is applied to reduce and deposit copper ions on the nickel layer surface. The deposition rate and grain structure of the copper layer are controlled by adjusting the plating time and current density, ensuring a smooth copper layer surface, excellent conductivity, and a strong bond with the nickel layer.

[0112] The copper layer surface of the conductive layer substrate undergoes surface optimization treatment. The copper layer is smoothed and stress-relieving through chemical polishing and heat treatment processes. First, the copper layer surface is lightly etched with an acidic polishing solution to remove micro-protrusions and surface defects, achieving a mirror-level smoothness. Then, the copper layer is annealed in a protective atmosphere through low-temperature heat treatment to eliminate the internal stress generated during electroplating, enhancing the mechanical stability and conductivity reliability of the copper layer. Finally, a conductive substrate containing mounting grooves, airflow channels, and metallized conductive paths is obtained, meeting the structural and functional requirements of high-ventilation chip packaging.

[0113] In one example, the step of immersing the structured substrate in a silane coupling agent solution to form active groups and then irradiating the surface of the structured substrate with ultraviolet light to obtain an activated substrate includes:

[0114] The preparation of the silane coupling agent solution specifically includes using 3-aminopropyltriethoxysilane as the silane coupling agent and a mixture of anhydrous ethanol and deionized water as the solvent, wherein the volume ratio of anhydrous ethanol to deionized water is 9:1 and the volume ratio of silane coupling agent to solvent is 1:10 to 1:15.

[0115] Glacial acetic acid was added to the silane coupling agent solution to adjust the pH value of the silane coupling agent solution to 4.5 to 5.5;

[0116] The structured substrate is placed in the silane coupling agent solution and immersed at room temperature for 1 to 2 hours;

[0117] Remove the soaked structured substrate, rinse it with deionized water, and dry it with nitrogen gas.

[0118] The dried structured substrate was irradiated under a UV light source at a distance of 5-10 cm for 10 to 20 minutes to obtain an activated substrate. The UV light source was a low-pressure mercury lamp with a wavelength of 250 nm to 300 nm and a power density of 10-15 mW / cm². 2 .

[0119] In the above embodiments, a preparation step for activating the substrate is provided, specifically the process of forming active groups through immersion in a silane coupling agent solution and ultraviolet light irradiation. First, a silane coupling agent solution is prepared, using 3-aminopropyltriethoxysilane as the silane coupling agent, whose amino functional groups can effectively bind to the subsequent metal layer. The solvent is a mixture of anhydrous ethanol and deionized water at a volume ratio of 9:1 to ensure solution stability and promote uniform dispersion of silane molecules. The volume ratio of silane coupling agent to solvent is controlled between 1:10 and 1:15 to ensure a suitable solution concentration and avoid excessive silane accumulation on the surface. Glacial acetic acid is added to adjust the pH of the solution to 4.5 to 5.5 to promote the hydrolysis reaction of silane and form active silanol groups. The structured substrate is immersed in this solution at room temperature for 1 to 2 hours, allowing silane molecules to form a monolayer on the substrate surface through chemical adsorption. Subsequently, the substrate is rinsed with deionized water to remove unbound silane molecules and dried with nitrogen gas to prevent surface contamination. After drying, the substrate is irradiated with ultraviolet light with a wavelength of 250 to 300 nanometers at a distance of 5 to 10 cm from a low-pressure mercury lamp, with a power density of 10-15 mW / cm². 2 The process lasts for 10 to 20 minutes. Ultraviolet light excites silane molecules on the substrate surface, further enhancing the chemical reactivity of their active groups and promoting bonding with the subsequent electroless nickel plating layer.

[0120] The chemical bonding ability of porous ceramic substrates is significantly improved through chemisorption of silane coupling agents and surface activation induced by ultraviolet light. The formed monolayer not only enhances the adhesion between the substrate and the metal layer but also improves the uniformity and stability of the conductive pathway. Optimized pH and soaking time ensure effective deposition of silane molecules, while ultraviolet irradiation further enhances the reactivity of surface-active groups, ultimately improving the packaging quality and performance of the high-efficiency exhaust chip.

[0121] In one example, the step of fixing the pretreated body to the mounting groove based on a preset adhesive, detecting the degree of curing, and when a preset semi-cured degree is reached, applying silicone-based adhesive around the pretreated body to form a dam structure includes:

[0122] The electrode area of ​​the pre-processing body is aligned with the conductive path of the mounting groove based on the visual guidance system, and then the pre-processing body and the mounting groove are pre-pressed together.

[0123] A pre-prepared adhesive is dynamically applied to the bottom of the mounting groove using a dispensing device, and the pre-treated body and the porous ceramic substrate are left to stand to obtain a coating assembly. The pre-prepared adhesive contains a marker, and the amount of the marker added is 0.5 to 2.0 wt% of the weight of the pre-prepared adhesive. The marker is at least one of methyl ethyl ketone, methyl isobutyl ketone, and solvent benzene.

[0124] The coating component is placed in a curing device, the curing temperature is set to 100~150°C, and the concentration change data of the marker in the curing device is obtained. When the concentration of the marker meets the preset concentration range, the preset semi-curing degree is reached, the curing device is stopped, and a semi-cured component is obtained. The curing device is equipped with a gas chromatograph or volatile organic compound detection device.

[0125] Silicone-based adhesive is applied around the pre-treated body using a dispensing device, and the surface of the applied silicone-based adhesive is leveled to obtain a cofferdam prefabricated component.

[0126] The cofferdam prefabricated components are placed in the curing equipment, the curing temperature is set to 80~120°C, and the cofferdam is cured in a vacuum environment for 20 to 30 minutes to obtain the cofferdam structure.

[0127] In the above embodiments, before fixing the pre-processed body to the mounting groove of the porous ceramic substrate, the pre-processed body is first precisely positioned and mounted using a high-precision mounting device. The pre-processed body is placed above the mounting groove of the porous ceramic substrate, and a high-resolution vision guidance system is used to precisely align the electrode area of ​​the chip body with the conductive path in the groove to ensure that the alignment deviation is controlled within the micrometer level. Then, a robotic arm slowly presses the pre-processed body down into the groove to contact the bottom at a constant speed to complete the mounting action and obtain the preliminary mounted assembly.

[0128] For the initial mounting assembly, adhesive is applied to the bottom of the groove using a precision dispensing device. Modified epoxy resin is selected as the adhesive, and the coating thickness is controlled to be evenly distributed within a specific range. During the application process, the movement speed and pressure of the dispensing needle are dynamically adjusted to ensure complete and bubble-free coverage of the adhesive at the bottom of the groove, while preventing overflow onto the sidewalls. A brief settling period is then allowed to allow the adhesive surface to become initially smooth, resulting in the coated assembly. The pre-applied adhesive contains a marker, added at an amount of 0.5–2.0 wt% of the pre-applied adhesive. The marker is at least one of methyl ethyl ketone (MEK), methyl isobutyl ketone (MEK), and benzene solvent. The marker exhibits volatility and a clear concentration change characteristic, serving as an indicator of the curing reaction progress. By monitoring the concentration change of the marker in a confined space, the degree of semi-curing of the pre-applied adhesive can be accurately determined.

[0129] The coated assembly is placed in a curing device equipped with a gas chromatograph or volatile organic compound (VOC) detection device. The curing temperature is set to 100-150°C. Within the curing device, heat is uniformly transferred to the coated assembly using circulating hot air or infrared heating to accelerate the curing process of the pre-applied adhesive and ensure uniform curing. Maintaining a circulating airflow velocity of 1-2 m / s within the curing device effectively removes volatiles, preventing their accumulation on the adhesive surface and avoiding localized overheating or surface defects. Uniform heating and appropriate airflow optimize the curing environment, reducing energy waste and improving production efficiency. When the pre-set semi-cured state is reached, heating is immediately stopped, and the assembly is then briefly cooled to stabilize the semi-cured state, resulting in a semi-cured assembly.

[0130] For semi-cured components, a high-precision dispensing system is used to apply a dammed adhesive around the pre-treated body. Silicone-based adhesive is selected as the dammed material. By controlling the trajectory and dispensing volume of the dispensing equipment, a continuous and highly uniform adhesive dam is formed around the pre-treated body. During the dispensing process, the movement path of the dispensing needle is dynamically adjusted to ensure the geometric accuracy of the dam structure and its tight adhesion to the pre-treated body. After the dispensing is completed, a brief surface leveling treatment is performed on the dammed adhesive to eliminate any possible needle movement marks, resulting in a dammed pre-structured component.

[0131] Vacuum pre-curing treatment is performed on the pre-constructed cofferdam components. The components are placed in a curing device, and the silicone-based adhesive of the cofferdam structure is pre-cured by controlling the vacuum degree and temperature. The curing temperature is set at 80~120°C, and the curing is carried out in a vacuum environment for 20 to 30 minutes. The vacuum environment effectively eliminates any residual air bubbles in the adhesive. At the same time, the low-temperature heating causes the surface of the adhesive to harden initially while maintaining a certain degree of fluidity inside, thereby enhancing the deformation resistance of the cofferdam structure and the compatibility of subsequent filling. After pre-curing, the components are slowly pressurized and cooled to prevent the cofferdam structure from deforming due to sudden pressure changes. The result is a cofferdam stabilization component that includes a pre-treated body fixed in the groove and a pre-cured cofferdam structure.

[0132] Subsequently, a high-resolution optical inspection device was used to comprehensively scan the height, width, and adhesion of the cofferdam structure of the cofferdam stabilization component to the pre-treated body, identifying any geometric defects or glue overflow in the cofferdam structure. For areas with minor deviations detected, precision finishing tools were used to locally grind or apply glue to the edges of the cofferdam to ensure the dimensional accuracy and surface smoothness of the cofferdam structure. After finishing, the entire component was cleaned to remove any possible residual particles.

[0133] In one example, the steps of wire bonding the conductive layer to the conductive path, injecting the silicone-based adhesive into the cofferdam structure, and then dynamically curing the silicone-based adhesive to obtain the electrical connection assembly include:

[0134] The conductive layer and the conductive path are wire bonded using ultrasound to obtain a preliminary connection structure;

[0135] The preliminary connection structure is optimized by thermo-press bonding to complete the electrical connection between the chip body and the porous ceramic substrate;

[0136] Silicone-based adhesive is injected into the cofferdam structure by a dispensing device using a dotting method, with the injection volume set to 30% of the volume of the cofferdam structure. Subsequently, additional silicone-based adhesive is injected into the cofferdam structure by a continuous injection method, with the injection volume being 70% of the volume of the cofferdam structure.

[0137] Based on the rotating device, the filled silicone adhesive is first pre-cured at a first rotation speed and a preset low temperature, and then the pre-cured silicone adhesive is fully cured at a second rotation speed and a preset high temperature to obtain an electrical connection component.

[0138] In the above embodiments, the conductive layer and conductive path are subjected to ultrasonic wire pre-bonding treatment. The conductive layer of the pre-treated body and the conductive path of the porous ceramic substrate are connected by using a copper alloy wire with a diameter of 18μm. By combining the coordinated adjustment of ultrasonic amplitude and bonding force, the initial electrical connection is completed at a temperature of 150°C, ensuring that the contact resistance is controlled below 0.1Ω. At the same time, the mechanical stability of the initial connection structure is enhanced by optimizing the microstructure of the bonding interface, thus obtaining the initial connection structure and forming the initial electrical connection network between the chip and the substrate.

[0139] The initial connection structure is optimized by hot-press bonding. By applying precisely controlled hot-press stress and performing secondary processing on the connection points between the copper alloy wire and the conductive path at a temperature of 180°C, the contact resistance is further reduced to below 0.06Ω by utilizing the atomic diffusion characteristics of the interface during hot pressing. At the same time, the fatigue resistance of the connection points is improved by optimizing the stress distribution of the bonding points, resulting in an enhanced connection structure that includes a highly reliable electrical connection network and a stable mechanical bonding interface.

[0140] Initial silicone-based adhesive injection was performed on the reinforced connection structure that electrically connects the chip body to the porous ceramic substrate. Silicone-based adhesive was injected into the dam structure using a low-speed dotting method, with the injection volume controlled at 30% of the dam volume. The injection angle and dotting speed were adjusted to ensure uniform distribution of the adhesive at the chip-substrate bonding area. Simultaneously, the surface tension of the dam structure was used to guide the adhesive's natural flow to fill minute gaps and prevent bubble formation. Subsequently, additional silicone-based adhesive was injected into the dam structure using a medium-speed continuous injection method, reaching 70% of the dam volume. The adhesion performance of the adhesive was optimized by considering the metallization characteristics of the dam's inner wall. The injection pressure was dynamically adjusted to ensure the adhesive filled every corner of the dam structure, forming a uniformly thick protective layer precursor, resulting in a fully filled component.

[0141] A low-temperature dynamic pre-curing process is performed on the fully filled component using a rotating device. Initial curing of the silicone-based adhesive is achieved at 90°C and a rotation speed of 600 rpm. The rotational motion controls the thickness uniformity of the adhesive surface, while the low-temperature environment reduces thermal stress accumulation during curing, ensuring tight adhesion between the adhesive and the chip / substrate interface, forming a 30 μm thick pre-cured protective layer. Subsequently, a high-temperature dynamic full curing process is performed, where the silicone-based adhesive is deeply cured at 120°C and a rotation speed of 1000 rpm. The high-temperature environment accelerates the cross-linking reaction of the adhesive, while the high-speed rotation further optimizes the surface smoothness and thickness uniformity of the protective layer, forming a 50 μm thick high-strength protective layer. The final result is an electrical connection component containing a highly reliable chip-substrate electrical connection structure and a protective layer with both mechanical strength and thermal stability.

[0142] In one embodiment, the step of coating the electrical connection component with multiple layers of a preset polymer to obtain a pre-encapsulated component includes:

[0143] The electrical connection assembly is placed in a spin coating apparatus and a primary spin coating process is performed based on a polyimide-based polymer to obtain a single-layer assembly.

[0144] The single-coat component is surface-activated using plasma to obtain an activated coating component.

[0145] The activated coating assembly is placed in a spin coating device, and a second spin coating process is performed on the activated coating assembly based on the modified epoxy polymer to obtain a double-layer coating assembly.

[0146] The double-layer coating assembly is placed in a curing device and heated to 90°C at a heating rate of 2°C / min and held at that temperature for 20-40 minutes to obtain a pre-cured coating assembly.

[0147] Based on the curing equipment, the pre-cured coating assembly is heated at 160°C for 20-30 minutes in a vacuum environment for deep curing treatment, and then the pre-cured coating assembly is cooled to room temperature at a rate of 1.5°C / minute to obtain the deep-cured coating assembly.

[0148] A pre-encapsulated component is obtained by depositing a hydrophobic protective layer on the surface of the deep-curing coating component using a fluorinated silane polymer.

[0149] In the above embodiments, the electrical connection component is placed in a spin coater, and the polyimide-based polymer is uniformly coated onto the surface of the electrical connection component by precise control of the spin coater, forming a single-layer polymer coating with a thickness of 60~120μm, resulting in a single-layer polymer coating component. The spin coater speed is dynamically adjusted in real time within the range of 1800~2800rpm, and combined with the polymer viscosity characteristics and centrifugal force distribution, the coating thickness uniformity error is ensured to be controlled within ±4%, while avoiding the generation of bubbles or particulate defects.

[0150] Surface activation treatment was performed on single-layer polymer coating components by bombarding the surface of the single-layer polymer coating with low-pressure argon plasma to obtain activated coating components. The process involved precisely controlling the plasma generator power between 80 and 120 W and maintaining the gas pressure within the range of 0.08 to 0.12 Pa. The bombardment time was optimized to 2.5 to 4 minutes based on the surface chemical characteristics of the coating material. This significantly enhanced the chemical activity and hydrophilicity of the coating surface, providing higher interfacial bonding strength for polymer coating adhesion, while ensuring that the activation process did not damage the structural integrity of the single-layer polymer coating.

[0151] A second spin-coating process was performed on the activated coating component to coat the surface of the activated coating with a modified epoxy polymer, forming a second polymer coating with a thickness of 40-80 μm, resulting in a bilayer polymer coating component. By dynamically adjusting the spin-coating speed between 2200 and 3200 rpm and considering the rheological properties and surface tension distribution of the epoxy polymer, seamless adhesion between the second coating and the activated coating was ensured. Simultaneously, by controlling the humidity of the coating environment within the range of 30-40%, microcracks or pores were prevented from forming during the coating process, thereby constructing a bilayer polymer structure with excellent mechanical properties.

[0152] The bilayer polymer structure undergoes pre-curing treatment by heating at a constant temperature of 90℃ for 35 minutes in a curing device to induce a preliminary cross-linking reaction in the bilayer polymer coatings, resulting in a pre-cured coating assembly. The heating rate is precisely controlled to within 2℃ / minute, and the uniformity of the cross-linking reaction is optimized based on the thermal reaction characteristics of the polymer material. This ensures that the curing rate of the first and second polymer coating layers reaches 55-65% during the pre-curing stage, thereby forming a coating structure with certain elasticity and toughness, while avoiding stress concentration caused by premature curing.

[0153] Further heating at 160℃ for 25 minutes under vacuum allows the double-layer polymer coating to complete a deep cross-linking reaction, resulting in a deep-cured coating assembly. By precisely controlling the vacuum level within the range of 0.05~0.1Pa, and combining the thermal conductivity characteristics and molecular chain rearrangement rules of the polymer material, the uniformity of the curing temperature distribution is optimized to ensure that the cross-linking density inside the coating reaches more than 90%. At the same time, the cooling rate is controlled to be less than 1.5℃ / min through slow cooling to prevent microcracks from forming in the coating due to thermal stress, thereby forming a deep-cured coating assembly with high hardness and a multi-layered polymer structure.

[0154] A low-temperature plasma spraying technique is used to deposit a fluorosilane-based polymer film onto the surface of a deep-curing coating component, forming a hydrophobic protective layer with a thickness of 10-20 μm. Specifically, by controlling the plasma spraying power between 50-80 W and the spraying distance between 5-10 mm, and by combining the deposition rate and surface wettability characteristics of the fluorosilane-based polymer, the uniformity and hydrophobic properties of the protective layer are optimized. This ensures that the pre-encapsulated component has excellent moisture resistance and corrosion resistance. Furthermore, a post-treatment annealing process at 60°C for 10 minutes further enhances the density and adhesion of the protective layer, thus completing the final encapsulation structure of the multi-layer polymer coating and obtaining the pre-encapsulated component.

[0155] In one embodiment, the step of reinforcing the pre-packaged component with a preset filler and then smoothing the surface of the pre-packaged component after reinforcing filling to obtain a high-expansion chip includes:

[0156] The pre-encapsulated component is filled with a preset filler under low pressure to obtain a primary filled component. The preset filler is composed of alumina particles with a particle size of 15-25 nanometers and modified epoxy resin mixed at a mass ratio of 1:5. The filling injection speed is set to 0.1-0.2 ml / s.

[0157] The primary filling component is subjected to segmented thermosetting based on a curing device to obtain a cured and reinforced component, and the surface of the cured and reinforced component is etched based on argon plasma to obtain a flat preparatory component.

[0158] The surface of the flattening preparation component is polished using helium plasma. During the polishing process, the flattening preparation component is simultaneously rotated at 10 revolutions per minute by a rotating device to obtain a smooth surface component.

[0159] The smooth surface component is subjected to gradient cooling to obtain a stable structural component;

[0160] The stable structural component is atomized and sprayed with a fluoropolymer solution, and then dried at 60°C for 10-15 minutes to obtain a strong exhaust chip.

[0161] In the above embodiments, a composite filler composed of nano-sized alumina particles with a particle size of 15-25 nanometers and modified epoxy resin at a mass ratio of 1:5 is used. A low-pressure infiltration process is employed, with a pressure range of 0.01-0.03 MPa, to inject the filler into the gaps. The filler's fluidity interacts with the substrate's pore structure to ensure uniform distribution within the gaps. The filler injection path is optimized based on the substrate's pore distribution characteristics. The injection speed is set at 0.1-0.2 ml / s to achieve a filler penetration rate of over 90%, thereby forming a stable filling structure between the substrate and coating of the pre-encapsulated component, resulting in a primary filled component.

[0162] The composite filler in the primary filler component is subjected to segmented thermosetting based on the curing equipment. The primary filler component is placed in a temperature-controlled curing oven and pre-cured at 80°C for 25 minutes to allow the modified epoxy resin to gradually cross-link and form a preliminary network structure. Then, the second stage of deep curing is carried out at 150°C for 10 minutes. The thermal stress distribution between the filler and the substrate is controlled by the two-stage temperature increase to ensure that the filler volume shrinkage is controlled within 1.5% during the curing process. The temperature uniformity is maintained by the circulating airflow with a flow rate of 0.5 m / s in the curing oven. In this way, a high-strength filler-substrate bond structure is formed in the gaps of the primary filler component, resulting in a cured and reinforced component.

[0163] The polymer coating surface of the cured and reinforced component is pretreated using a low-temperature plasma cleaning process. Argon plasma is used to micro-etch the coating surface. The processing power is set to 40 watts and the gas pressure to 0.03 Pa. This process removes trace amounts of organic matter that may remain during the curing process and activates the surface. During the cleaning process, the plasma density is controlled to homogenize the surface micro-texture. The processing time is controlled to 1.5 to 2 minutes to avoid over-etching. After cleaning, the surface is dried by airflow to remove residual particles. The drying nitrogen flow rate is set to 0.3 m / s. This results in a clean and micro-smooth surface on the polymer coating of the cured and reinforced component, yielding a smooth pre-component.

[0164] The polymer coating surface of the planarization pre-assembly component is precision polished. High-energy particle bombardment with helium plasma at 0.04 Pa and 60 watts power rearranges the surface molecular chains of the planarization pre-assembly component. During the polishing process, a rotating device is used to ensure polishing uniformity at a speed of 10 rpm. The polishing time is controlled between 1 and 1.5 minutes to achieve a surface roughness of less than 0.08 micrometers. At the same time, the plasma power is dynamically adjusted during the polishing process to optimize the surface molecular structure, with a variation range of ±5 watts. This results in a highly smooth and structurally stable state on the coating surface of the planarization pre-assembly component, thus obtaining a smooth surface component.

[0165] A gradient cooling process is applied to the smooth surface components. The polished components are placed in a programmable temperature control chamber and gradually cooled from 150℃ to room temperature at a rate of 0.2~0.4℃ / min. During the cooling process, multiple cooling curves are used. In the first stage, the temperature is maintained at 120℃ for 10 minutes, and in the second stage, it is maintained at 80℃ for 15 minutes to control the difference in thermal expansion between the substrate and the filler. Low-speed nitrogen gas is circulated in the temperature control chamber at a flow rate of 0.2 m / s to maintain the uniformity of the temperature field and avoid the generation of microcracks or stress concentration during the cooling process. This results in a thermodynamically stable substrate-filler-coating composite structure, thus obtaining a stable structural component.

[0166] A 2% fluoropolymer solution is used, and an atomized spraying process is employed with a spraying pressure of 0.05 MPa to form a protective film with a thickness of 0.5-1 micrometer on the polymer coating surface of the stable structural component. During the spraying process, the nozzle movement speed is controlled at 5 mm / s to ensure uniform coating thickness. After spraying, the film is dried at 60°C for 10 minutes to cure. Infrared-assisted heating is used during the drying process to optimize the film density, thereby forming a corrosion-resistant and wear-resistant protective structure on the surface of the stable structural component. The final product is a high-efficiency exhaust chip that includes multi-layer polymer protection, functional enhancement filling, and surface protection.

[0167] refer to Figure 2 and Figure 3 A packaging device for a high-efficiency exhaust chip, comprising:

[0168] The base 1 has a first moving mechanism 2 that moves along the X-axis on its upper end surface.

[0169] A rotating device, wherein the rotating device is provided with a rotating disk 3, and the rotating disk 3 is rotatably connected to the drive end of the moving mechanism via a dynamic pressure bearing;

[0170] The dispensing device 4 is connected to the base 1 via a second moving mechanism 5, and the dispensing device 4 is disposed above the rotating disk 3.

[0171] A clamping device 6 is connected to the drive end of the second moving mechanism 5, and the clamping device 6 is disposed on one side of the dispensing device 4 for fixing the pretreatment body to the mounting groove.

[0172] In the above embodiments, the base 1 serves as the basic support structure of the packaging equipment, ensuring the stability and accuracy of the entire packaging process. The first moving mechanism 2 moves along the X-axis, providing precise positioning and movement capabilities for the rotating device and the chip on it, ensuring that the chip can be accurately aligned and moved to the designated position during the packaging process. Specifically, the driving end of the first moving mechanism 2 adopts a sliding groove and transmission belt configuration, that is, the driving end slides with the sliding groove, its bottom end is fixed relative to the transmission belt, and the movement of the driving end is achieved by the transmission roller driving the belt.

[0173] The drive end of the first moving mechanism 2 has a square base structure. The rotating device is rotatably connected to the drive end of the first moving mechanism 2 through a hydrodynamic bearing. This not only ensures the stability and accuracy of the rotating disk 3 during rotation but also effectively reduces friction and wear. The rotating disk 3 allows the chip to rotate during the packaging process, thereby achieving uniform processing of various parts of the chip and improving packaging quality.

[0174] The dispensing device 4 is connected to the base 1 via the second moving mechanism 5 and is positioned above the rotating disk 3. This allows for precise control of the position and injection volume of the adhesive during the dispensing process, ensuring uniform distribution of the adhesive at the chip-substrate bonding area, preventing the formation of bubbles, and improving the reliability and stability of the encapsulation.

[0175] The clamping device 6 is connected to the drive end of the second moving mechanism 5 and is located on one side of the dispensing device 4. The function of the clamping device 6 is to fix the pre-processed body in the mounting groove, ensuring that the chip will not be misaligned due to movement or vibration during the packaging process, thereby ensuring the accuracy and reliability of the packaging. The drive end of the clamping device 6 is adapted to the size and shape of the chip, ensuring the stability and consistency of the fixing effect.

[0176] In one embodiment, the second moving mechanism 5 includes a support frame 51, the support frame 51 is provided with a first slide rail 52 group extending along the Y-axis, the first slide rail 52 group is slidably connected to a sliding frame 53, one side of the sliding frame 53 is provided with a second slide rail group 54 extending along the X-axis, the second slide rail group 54 is slidably connected to a lifting seat 55, the end face of the lifting seat 55 facing away from the second slide rail group 54 is provided with a lifting frame 56 extending along the Z-axis, the dispensing device 4 and the pressing device 6 are both fixedly connected to the lifting frame 56, and the lifting frame 56 is also connected to a vision guidance system 7 for guiding the dispensing device 4 and the pressing device 6;

[0177] The pressing device 6 further includes an electric push rod 61 and a pressing head 62. The electric push rod 61 is fixedly connected to the lifting frame 56, and the pressing head 62 is connected to the output end of the electric push rod 61. A pressure sensor 63 is provided between the output end of the electric push rod 61 and the pressing head 62.

[0178] The dispensing device 4 includes a dispensing needle 41, the bottom end of which is disposed on the same plane as the bottom end of the pressing head 62.

[0179] In the above embodiment, the second moving mechanism 5 achieves precise control of the dispensing device 4 and the pressing device 6 in three-dimensional space. The support frame 51, serving as the foundation of the second moving mechanism 5, is slidably connected to the sliding frame 53 via the first slide rail group 52, allowing the sliding frame 53 to move along the Y-axis, thereby adjusting the positions of the dispensing device 4 and the pressing device 6 in the Y-axis direction. The second slide rail group 54 on the sliding frame 53 allows the lifting seat 55 to move along the X-axis, further adjusting the positions of the dispensing device 4 and the pressing device 6 in the X-axis direction. The lifting frame 56, located on the end face of the lifting seat 55 facing away from the second slide rail group 54, extends along the Z-axis, enabling height adjustment of the dispensing device 4 and the pressing device 6 in the vertical direction of the Z-axis. This three-dimensional movement ensures that the dispensing device 4 and the pressing device 6 can accurately reach any position on the chip, greatly improving the flexibility and accuracy of the packaging process.

[0180] The addition of the vision guidance system 7 enhances the intelligence level of the packaging equipment. By capturing image information of the chip, it analyzes and guides the dispensing device 4 and the pressing device 6 to perform precise operations in real time, which not only reduces the error of manual operation, but also greatly improves packaging efficiency and quality.

[0181] The electric push rod 61 and clamping head 62 in the clamping device 6 ensure the stability and reliability of the chip during the packaging process. The electric push rod 61 precisely controls the thrust at its output end, enabling the clamping head 62 to stably fix the pre-processed body in the mounting groove. The pressure sensor 63 monitors the pressure of the clamping head 62 on the chip in real time, preventing damage to the chip due to excessive pressure or displacement of the chip during packaging due to insufficient pressure. Furthermore, the bottom end of the dispensing needle 41 in the dispensing device 4 is flush with the bottom end of the clamping head 62, ensuring that the adhesive is evenly injected into the bonding area between the chip and the substrate, avoiding the formation of air bubbles.

[0182] The above description is merely a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method of packaging a high exhaust chip, characterized by, The method comprises the following steps: carrying out thin film deposition on the surface of a chip body, sequentially forming an isolation layer and a protective layer from inside to outside, and sputtering a conductive layer on the electrode area of the chip body to obtain a pretreated body; carrying out microprocessing on a porous ceramic substrate to form a mounting groove and an airflow channel, and carrying out metallization treatment on the surface of the porous ceramic substrate and the inner wall of the mounting groove to form a conductive path; fixing the pretreated body in the mounting groove based on a preset adhesive, and detecting the curing degree; when the preset semi-curing degree is reached, point the silicone-based glue around the pretreated body to form a cofferdam structure; wire bonding the conductive layer and the conductive path, and injecting the silicone-based glue into the cofferdam structure, and then dynamically curing the silicone-based glue to obtain an electrical connection assembly; coating the electrical connection assembly with multiple layers of a preset polymer to obtain a pre-packaged assembly; based on a preset filler, enhancing and filling the pre-packaged assembly, and carrying out surface smoothing treatment on the pre-packaged assembly after the enhancing and filling to obtain a strong exhaust chip.

2. The method of claim 1, wherein, The step of carrying out thin film deposition on the surface of a chip body, sequentially forming an isolation layer and a protective layer from inside to outside, and sputtering a conductive layer on the electrode area of the chip body to obtain a pretreated body comprises: providing a chip body of a strong exhaust chip, placing the chip body in a plasma cleaning device, taking a mixed plasma of argon and oxygen as a working medium, and acting for 5-10 minutes, wherein the radio frequency power of the plasma cleaning device is set to 100-150 W; carrying out chemical vapor deposition treatment on the cleaned chip body with silane and ammonia to obtain a primary isolation body; carrying out cyclic deposition on the primary isolation body with trimethylaluminum and water vapor as precursors to form a composite protective body, wherein 0.1 nm of aluminum oxide is deposited per cycle, and the number of repeated cycles is 100-200 times; coating a photoresist with a thickness of 1-2 μm on the electrode area of the composite protective body, and carrying out mask photolithography treatment on the electrode area based on 365 nm ultraviolet light to obtain a patterned protective body; carrying out magnetron sputtering on the electrode area of the patterned protective body based on a titanium-tungsten alloy target to form a conductive layer to obtain a conductive deposition body; carrying out etching and finishing treatment on the conductive layer of the conductive deposition body based on a chlorine-based plasma to obtain a pretreated body.

3. The method of claim 1, wherein, The step of carrying out microprocessing on a porous ceramic substrate to form a mounting groove and an airflow channel, and carrying out metallization treatment on the surface of the porous ceramic substrate and the inner wall of the mounting groove to form a conductive path comprises: providing an alumina-silica-based ceramic substrate, and carrying out plasma cleaning and high-temperature annealing treatment on the ceramic substrate to form a porous ceramic substrate, wherein the porosity of the porous ceramic substrate is 25% to 35%; carrying out etching on the surface of the porous ceramic substrate based on an ultraviolet laser to form a mounting groove and an airflow channel to obtain a structured substrate; immersing the structured substrate in a silane coupling agent solution to form active groups, and irradiating the surface of the structured substrate with ultraviolet light to obtain an activated substrate; carrying out a chemical nickel plating treatment on the activated substrate to obtain a transition layer substrate, and carrying out a copper electroplating treatment on the transition layer substrate to obtain a conductive layer substrate; carrying out a surface optimization treatment on the conductive layer substrate based on an acidic polishing solution, and carrying out annealing on the surface-optimized conductive layer substrate in an inert gas atmosphere to obtain a conductive substrate.

4. The method of claim 1, wherein, The step of forming active groups on the structured substrate by immersing the structured substrate in a silane coupling agent solution and irradiating the surface of the structured substrate with ultraviolet light to obtain an activated substrate comprises: The silane coupling agent solution is prepared, specifically including 3-aminopropyl triethoxysilane as a silane coupling agent, and a mixture of anhydrous ethanol and deionized water as a solvent, wherein the volume ratio of anhydrous ethanol to deionized water is 9:1, and the volume ratio of silane coupling agent to solvent is 1:10-1:15; Acetic acid is added to the silane coupling agent solution to adjust the pH of the silane coupling agent solution to 4.5-5.5; The structured substrate is immersed in the silane coupling agent solution at room temperature for 1-2 hours; The immersed structured substrate is taken out, washed with deionized water, and dried with nitrogen; The blow-dried structured substrate is placed under an ultraviolet light source at a distance of 5-10 cm for 10 to 20 minutes to obtain an activated substrate, wherein the ultraviolet light source is based on a low-pressure mercury lamp with a wavelength of 250 nm to 300 nm and a power density setting of 10-15 mW / cm 2 .

5. The method of claim 1, wherein, The step of fixing the pretreated body to the mounting groove based on a predetermined adhesive and detecting the curing degree, and when the predetermined semi-curing degree is reached, point coating silicone-based glue around the pretreated body to form a cofferdam structure comprises: Aligning the electrode region of the pretreated body with the conductive path of the mounting groove based on a visual guidance system, and then pre-pressing the pretreated body and the mounting groove; Based on the dispensing device, the bottom of the mounting groove is dynamically coated with a predetermined adhesive, and the pretreated body and the porous ceramic substrate are placed to obtain a coated assembly, wherein the predetermined adhesive contains a marker, the addition amount of the marker is 0.5-2.0 wt% of the weight of the predetermined adhesive, and the marker is at least one of butanone, methyl isobutyl ketone, and solvent benzene; The coated assembly is placed in a curing device, the curing temperature is set to 100-150°C, and the concentration change data of the marker in the curing device is obtained, when the concentration of the marker meets the predetermined concentration range, the predetermined semi-curing degree is reached, the operation of the curing device is stopped, and a semi-cured assembly is obtained, wherein the curing device is provided with a gas chromatograph or a volatile organic compound detection device; Based on the dispensing device, the pretreated body is point coated with silicone-based glue, and the point-coated silicone-based glue is subjected to surface leveling treatment to obtain a cofferdam pre-assembly; The cofferdam pre-assembly is placed in the curing device, the curing temperature is set to 80-120°C, and the cofferdam structure is obtained by curing in a vacuum environment for 20-30 minutes.

6. The method of claim 1, wherein, The step of wire bonding the conductive layer and the conductive path, and then injecting the silicone-based glue into the cofferdam structure, and dynamically curing the silicone-based glue to obtain an electrical connection assembly comprises: The conductive layer and the conductive path are wire bonded based on ultrasonic waves to obtain a preliminary connection structure; The primary connection structure is subjected to thermal compression bonding optimization to complete electrical connection of the chip body and the porous ceramic substrate; Based on the dispensing device, silicone-based glue is injected into the cofferdam structure by point coating, and the injection amount is set to 30% of the volume of the cofferdam structure, and then the silicone-based glue is continuously injected into the cofferdam structure, and the injection amount is 70% of the volume of the cofferdam structure; Based on the rotating device, the filled silicone-based glue is pre-solidified at a first rotating speed and a preset low temperature, and then the pre-solidified silicone-based glue is completely solidified at a second rotating speed and a preset high temperature to obtain an electrical connection assembly.

7. The method of claim 1, wherein, The step of coating the electrical connection assembly with multiple layers of a preset polymer to obtain a pre-packaged assembly comprises: The electrical connection assembly is placed in a spin coating device, and a primary spin coating process is performed based on a polyimide-based polymer to obtain a single-coated assembly; The single-coated assembly is subjected to surface activation treatment based on plasma to obtain an activated coated assembly; The activated coated assembly is placed in a spin coating device, and a secondary spin coating process is performed on the activated coated assembly based on a modified epoxy-based polymer to obtain a double-coated assembly; The double-coated assembly is placed in a curing device, heated to 90℃ at a heating rate of 2℃ / min, and kept at a constant temperature for 20-40 min to obtain a pre-solidified coated assembly; Based on the curing device, the pre-solidified coated assembly is heated at 160℃ in a vacuum environment for 20-30 min for deep curing treatment, and then the pre-solidified coated assembly is cooled to room temperature at a rate of 1.5℃ / min to obtain a deep-cured coated assembly; A hydrophobic protective layer is deposited on the surface of the deep-cured coated assembly by a fluorosilane-based polymer to obtain a pre-packaged assembly.

8. The method of claim 1, wherein, The step of enhancing the pre-packaged assembly with a preset filler and performing surface smoothing treatment on the enhanced pre-packaged assembly to obtain a strong exhaust chip comprises: The pre-packaged assembly is subjected to low-pressure infiltration filling with a preset filler to obtain a primary filled assembly, wherein the preset filler is a mixture of aluminum oxide particles with a particle size of 15-25 nanometers and modified epoxy resin in a mass ratio of 1:5, and the filling injection speed is set to 0.1-0.2 ml / s; The primary filled assembly is subjected to segmented thermal curing treatment based on a curing device to obtain a cured enhanced assembly, and the cured enhanced assembly is subjected to surface etching based on argon plasma to obtain a smooth prepared assembly; The surface of the smooth prepared assembly is polished based on helium plasma, and at the same time, the smooth prepared assembly is rotated at 10 revolutions / min by a rotating device during the polishing process to obtain a smooth surface assembly; The smooth surface assembly is subjected to gradient cooling treatment to obtain a stable structure assembly; The stable structure assembly is subjected to atomization spraying based on a fluorine-containing polymer solution, and then dried at 60℃ for 10-15 min to obtain a strong exhaust chip.

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