A thermoelectric conversion device

Abstract

This invention provides a thermoelectric conversion device, comprising a shape memory bracket, a deformation energy conversion mechanism, and two heat sources. The shape memory bracket is mounted on a fixed support and includes two single-pass shape memory beams, which are used to receive heat from the two heat sources respectively. The two single-pass shape memory beams are configured to alternately receive heat from the corresponding heat sources, causing the shape memory bracket to reciprocate between a first vibration offset position and a second vibration offset position. The deformation energy conversion mechanism is configured to generate electricity in response to the deformation of the shape memory bracket. The shape memory beams used in this invention possess a single-pass memory effect, which, compared to a two-pass memory effect, offers advantages such as simpler manufacturing process, lower cost, and higher cycle stability, effectively reducing the long-term use cost of the shape memory beams and thus lowering the thermal energy conversion cost efficiency of this application.

Description

Technical Field

[0001] This invention belongs to the field of energy conversion technology, and specifically relates to a thermoelectric conversion device. Background Technology

[0002] In daily production and life, there are many forms of low-temperature heat energy (temperature not higher than 200℃) such as industrial waste heat, geothermal energy, solar thermal energy, and human body heat that are not utilized, resulting in a large amount of low-temperature heat energy being wasted. This is incompatible with the current social requirements for low-carbon, environmental protection and energy conservation, and urgently needs to be changed.

[0003] To utilize low-temperature thermal energy, invention patent application number 2014800243016 discloses a thermoelectric generator that combines shape memory materials and piezoelectric materials. The shape memory material converts thermal energy into deformation energy, and the piezoelectric material converts the deformation energy back into thermal energy, thus achieving the goal of converting thermal energy into electrical energy. While this patent can convert thermal energy from a heat source into electrical energy, to ensure continuous power generation, after the heat from the heat source is directed to the shape memory material and causes deformation, the heat from the heat source must be stopped or reduced to allow the shape memory material to return to its initial shape. In other words, the shape memory material used in the aforementioned patent is a two-way shape memory material (i.e., it has a two-way memory effect, which restores its high-temperature shape when heated and its low-temperature shape when cooled). The manufacturing process of this two-way shape memory material is complex, requiring specific thermomechanical cycle training to obtain the two-way memory effect. It has high requirements for processing precision and process control, resulting in high manufacturing costs, which in turn affects the cost of thermal energy conversion. Moreover, when two-way shape memory materials undergo frequent phase transitions, their memory performance is prone to decay, and their cycle stability is poor, requiring frequent replacement, which increases the long-term use cost and further increases the cost-effectiveness of thermal energy conversion (i.e., the ratio of the cost of converting thermal energy into electrical energy to the electrical energy obtained). Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this invention is to provide a thermoelectric conversion device with low unit thermal energy conversion cost efficiency.

[0005] To achieve the above and other related objectives, this invention provides a thermoelectric conversion device, comprising a shape memory bracket, a deformation energy conversion mechanism, and two heat sources. The shape memory bracket is mounted on a fixed support and includes two single-pass shape memory beams, which are used to receive heat from the two heat sources respectively. The two single-pass shape memory beams are configured to alternately receive heat from the corresponding heat sources, causing the shape memory bracket to reciprocate between a first vibration offset position and a second vibration offset position. The deformation energy conversion mechanism is configured to generate electricity in response to the deformation of the shape memory bracket. The shape memory beam used in this invention possesses a single-pass memory effect, which, compared to a two-pass memory effect, has advantages such as simple manufacturing process, low cost, and high cycle stability (stable even after thousands of cycles), effectively reducing the long-term use cost of the shape memory beam and thus reducing the thermal energy conversion cost efficiency of this application.

[0006] Preferably, each of the single-pass shape memory beams includes a suspended portion and connecting portions located at both ends of the suspended portion, and each connecting portion of the single-pass shape memory beam is mounted on a fixed bracket.

[0007] Preferably, the deformation energy conversion mechanism includes a piezoelectric conversion module and / or a magnetoelectric coupling module; simultaneously providing both a piezoelectric conversion module and a magnetoelectric coupling module can effectively improve the conversion rate of the deformation energy of the shape memory bracket to obtain more electrical energy, thereby further improving the cost efficiency of thermal energy conversion.

[0008] Preferably, the piezoelectric conversion module includes piezoelectric sheets arranged at each end of the suspended portion; when the shape memory beam undergoes a shape change, mechanical stress is generated. When this mechanical stress is applied to the piezoelectric sheet, it causes the piezoelectric sheet to produce a piezoelectric effect, thereby generating positive and negative charges on the two surfaces of the piezoelectric sheet, respectively, thus generating electricity.

[0009] Preferably, the magnetoelectric coupling module includes an excitation coil and a permanent magnet that cooperates with the excitation coil; one of the excitation coil and the corresponding permanent magnet is disposed on a shape memory support, and the other is disposed on a fixed support. When the shape memory support reciprocates and vibrates relative to the fixed support, there will be relative motion between the excitation coil and the corresponding permanent magnet, resulting in a change in the magnetic flux passing through the excitation coil, thereby generating an induced electromotive force in the excitation coil, and then generating an induced current.

[0010] Preferably, the shape memory bracket includes a coil bracket made of heat-insulating material; the coil bracket is used to connect the suspended parts of two single-pass shape memory beams; the excitation coil is sleeved on the coil bracket, and the permanent magnet is set on the fixed bracket; the coil bracket can not only serve as a mounting bracket for the excitation coil, but also can transmit the driving force generated when one single-pass shape memory beam restores its memory shape to another single-pass shape memory beam, thereby reducing the overall cost of the device.

[0011] Preferably, the two single-pass shape memory beams are arranged in parallel to reduce the space occupied by the entire thermoelectric conversion device.

[0012] Preferably, the single-pass shape memory beam has a symmetrical structure; the suspended part of the single-pass shape memory beam includes a heat source contact part and deformable parts located at both ends of the heat source contact part; the heat source contact part is used to contact the corresponding heat source surface, which is beneficial to realize the rapid heating of the single-pass shape memory beam.

[0013] Preferably, the heat source contact part, deformation part and connecting part of the shape memory beam have a smooth transition to reduce stress concentration during the deformation process.

[0014] Preferably, in the initial state, the deformation part of the shape memory beam is S-shaped. This S-shaped structure has two bending segments. During the deformation process of the shape memory beam in a single pass, these bending segments can coordinate the deformation more flexibly, making the deformation of the beam more uniform and continuous, thereby further reducing local stress concentration.

[0015] Preferably, the thermoelectric conversion device includes an energy harvesting circuit; the energy harvesting circuit is used to collect and output the electricity generated by the deformation energy conversion mechanism so as to utilize the converted electrical energy.

[0016] As described above, the thermoelectric conversion device provided by the present invention has the following beneficial effects:

[0017] Because the shape memory beam used in this invention has a one-way memory effect, when a one-way shape memory beam not in its shape-memory state is heated to the austenitic transformation temperature by its corresponding heat source, based on the shape memory effect, the heated one-way shape memory beam will bend and deform towards another one-way shape memory beam to restore its shape memory. During the process of restoring its shape memory, the heated one-way shape memory beam will move away from its corresponding heat source while simultaneously pushing the other one-way shape memory beam to deform until the other one-way shape memory beam comes into contact with its corresponding heat source and is heated to the austenitic transformation temperature. At this point, the newly heated one-way shape memory beam... It will bend and deform in the opposite direction to restore the memory shape. During the process of restoring the memory shape, while moving away from the corresponding heat source, it pushes another one-way shape memory beam to deform until the other one-way shape memory beam comes into contact with the corresponding heat source and is heated to the austenitic phase transformation temperature. By repeating this cycle, the alternating heating of the two one-way shape memory beams can be used to make the shape memory bracket where the one-way shape memory beam is located vibrate and deform back and forth between the first vibration offset position and the second vibration offset position. Since this application only needs to configure two stable heat sources, it can realize the cyclic vibration deformation of the shape memory bracket, effectively reducing the cost of cyclic vibration deformation of the shape memory bracket.

[0018] The shape memory beam used in this invention has a single-pass memory effect, which, compared with the two-pass memory effect, has the advantages of simple manufacturing process, low cost and high cycle stability (stable even after thousands of cycles), effectively reducing the long-term use cost of the shape memory beam, and thus reducing the thermal energy conversion cost efficiency of this application.

[0019] When a scheme that simultaneously sets up a piezoelectric conversion module and a magnetoelectric coupling module is used to convert the deformation energy of the shape memory bracket, the deformation energy of the shape memory bracket can be converted into more electrical energy, further improving the cost efficiency of thermal energy conversion. Attached Figure Description

[0020] Figure 1 This is a front view of the thermoelectric conversion device in this application.

[0021] Figure 2 for Figure 1 A 3D view after removing the heat source.

[0022] Figure 3 This is a perspective view of the single-pass memory beam in this application.

[0023] Figure 4 This is a front view of Embodiment 1 of the shape memory bracket in this application.

[0024] Figure 5 This is a front view of Embodiment 2 of the shape memory bracket in this application.

[0025] Figure 6This is a perspective view of Embodiment 3 of the shape memory bracket in this application.

[0026] Figure 7 This is a perspective view of Embodiment 4 of the shape memory bracket in this application.

[0027] Figure 8 For installation Figure 4 The diagram shows a three-dimensional view of the fixed support of the shape memory bracket.

[0028] Figure 9 For installation Figure 5 The diagram shows a three-dimensional view of the fixed support of the shape memory bracket.

[0029] Figure 10 For installation Figure 6 The diagram shows a three-dimensional view of the fixed support of the shape memory bracket.

[0030] Figure 11 For installation Figure 7 The diagram shows a three-dimensional view of the fixed support of the shape memory bracket.

[0031] Figure 12 This is an exploded view of the coil support in this application.

[0032] Figure 13 This is a schematic diagram illustrating the principle of the shape memory bracket cyclically changing between a first vibration offset position and a second vibration offset position in one embodiment of this application.

[0033] Figure 14 This is a schematic diagram illustrating the principle of the shape memory bracket cyclically changing between a first vibration offset position and a second vibration offset position, according to another embodiment of this application.

[0034] Figure 15 This is a schematic diagram of the energy harvesting circuit in this application.

[0035] Figure 16 This is a schematic diagram showing the connection of the piezoelectric rectifier circuit, the magnetoelectric rectifier circuit, and the energy storage circuit in one embodiment of this application.

[0036] Explanation of reference numerals in the attached figures

[0037] Fixed bracket 100, memory beam mounting plate 110, receiving groove 110a, heat insulation block 120, hollow square frame 130, upper mounting plate 131, lower mounting plate 132, cover plate 140, force transmission beam mounting plate 150, slot 151.

[0038] Shape memory bracket 200, single-pass shape memory beam 210, suspended part 211, heat source contact part 211a, deformation part 211b, connecting part 212, coil bracket 220, first bracket 221, first mounting base 221a, hollow cylinder 221b, second bracket 222, second mounting base 222a, insert shaft 222b, force transmission beam 230;

[0039] Piezoelectric conversion module 310, piezoelectric element 311;

[0040] Magnetoelectric coupling module 320, excitation coil 321, permanent magnet 322;

[0041] Heat source 400;

[0042] Piezoelectric rectifier circuit 510, magnetoelectric rectifier circuit 520, energy storage circuit 530, voltage regulating circuit 540. Detailed Implementation

[0043] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0044] Please see Figures 1 to 16 It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art and to facilitate understanding and reading. They are not intended to limit the scope of the invention and therefore have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of the invention, should still fall within the scope of the technical content disclosed in this invention. Furthermore, the terms such as "upper," "lower," "left," "right," "middle," and "one" used in this specification are merely for clarity and not intended to limit the scope of the invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of the invention's implementation.

[0045] like Figure 1 and Figure 2 As shown, the thermoelectric conversion device provided by the present invention includes a fixed bracket 100, a shape memory bracket 200, a deformation energy conversion mechanism and two heat sources 400, and the shape memory bracket 200 is mounted on the fixed bracket 100.

[0046] For ease of description, in the following embodiments, the length direction of the shape memory support 200 is defined as the left-right direction, the width direction is defined as the front-back direction, and the thickness direction is defined as the top-bottom direction. Based on this, Figure 1In the view shown, the top and bottom sides of the paper are the up and down directions, the left and right sides are the left and right directions, and the front and back sides are the front and back directions.

[0047] like Figure 1 As shown, the shape memory support 200 includes two vertically arranged single-pass shape memory beams 210, which are used to receive heat from two heat sources 400 respectively. The two single-pass shape memory beams 210 are configured to alternately receive heat from the corresponding heat sources to restore their memory shape, so that the shape memory support 200 reciprocates and deforms between a first vibration offset position and a second vibration offset position. The deformation energy conversion mechanism is configured to generate continuous electricity in response to the deformation of the shape memory support 200.

[0048] It is understood that at least one end of the single-pass shape memory beam 210 is detachably fixed to the fixed bracket 100 by bolts or clamps, etc., and this is not limited; in this embodiment, such as Figure 1 As shown, both ends of each single-pass shape memory beam 210 are detachably fixed to the fixed bracket 100 by bolts or clamps to form a fixed beam. At this time, as... Figure 3 As shown, the single-pass shape memory beam 210 includes a suspended portion 211 in the middle and connecting portions 212 formed at both ends of the suspended portion 211, and the connecting portions 212 are used for detachable fixed connection with the fixed bracket 100.

[0049] It should be noted that the single-pass shape memory beam 210 is a shape memory beam made of shape memory material and has a single-pass memory effect. The single-pass shape memory beam 210 has a memory shape (i.e., a high-temperature shape). The shape memory material used in the single-pass shape memory beam 210 can be various shape memory alloys such as nickel-titanium alloy or copper-aluminum-nickel alloy, or other shape memory polymers. There are no limitations on this.

[0050] It is understood that the materials and shape memory processing methods of the two single-pass shape memory beams 210 can be the same or different, and there is no limitation on this. In this embodiment, the materials and shape memory processing methods of the two single-pass shape memory beams 210 are completely identical (i.e., their austenite initiation temperature, austenite termination temperature, martensite initiation temperature, and martensite termination temperature are all the same); wherein, the shape memory material used in the single-pass shape memory beam 210 is preferably a nickel-titanium alloy; furthermore, since the shape memory processing method of the single-pass shape memory beam 210 is existing technology, it will not be described in detail.

[0051] It is worth mentioning that when the single-pass shape memory beam 210 is cooled below the martensite initiation temperature, it gradually becomes soft and can undergo a certain degree of deformation, thus facilitating the deformation of the single-pass shape memory beam 210 in a cooled state (i.e., at a temperature below the martensite initiation temperature); when the deformed single-pass shape memory beam 210 is heated to a temperature above the austenite initiation temperature, it will begin to recover its memory shape; when the single-pass shape memory beam 210 is heated to a temperature above the austenite end temperature, it will completely recover its memory shape.

[0052] Therefore, in this application, when any one of the single-pass shape memory beams 210 recovers its memory shape, it will generate a driving force to push the other single-pass shape memory beam 210 to bend and deform. In this way, when the two single-pass shape memory beams 210 are heated alternately, the shape memory support 200 where the two single-pass shape memory beams 210 are located can reciprocate and deform between the first vibration offset position and the second vibration offset position.

[0053] During the reciprocating vibration deformation of the shape memory support 200, the two single-pass shape memory beams 210 inevitably need to be in direct or indirect contact to achieve force transmission. To avoid the two single-pass shape memory beams 210 being heated to the austenitic transformation temperature (i.e., a temperature value greater than the austenitic initiation temperature) due to temperature transfer between parts, which would affect the reciprocating vibration deformation of the shape memory support 200, the fixed support 100 needs to have a heat insulation function, and the suspended part 211 of the two single-pass shape memory beams 210 needs to be connected by a heat-insulated force transmission frame; in this way, it can be ensured that only one single-pass shape memory beam 210 can be heated to the austenitic transformation temperature at any time, thereby ensuring the smooth reciprocating vibration deformation of the shape memory support 200.

[0054] In this embodiment, the austenite phase transformation temperature is preferably greater than the austenite end temperature in order to maximize the vibration amplitude of the shape memory support 100 (i.e., the distance between the first vibration offset position and the second vibration offset position); at this time, the first vibration offset position is the position of the shape memory support 200 when the upper single-pass shape memory beam 210 restores its memory shape, and the second vibration offset position is the position of the shape memory support 200 when the lower single-pass shape memory beam 210 restores its memory shape.

[0055] In addition, in order to ensure the dynamic balance of the shape memory support 200 during the reciprocating vibration deformation process, the shape memory support 200 preferably adopts a symmetrical structure; at this time, the single-pass shape memory beam 210 is also a symmetrical structure.

[0056] Specifically, such as Figure 3As shown, the suspended portion 211 of the shape memory support 200 includes a heat source contact portion 211a and deformable portions 211b located at both ends of the heat source contact portion 211a; wherein, the heat source contact portion 211a is used to contact the corresponding heat source surface. In addition, in order to reduce stress concentration, the heat source contact portion 211a, the deformable portion 211b and the connecting portion 220 of the single-pass shape memory beam 210 need to have a smooth transition.

[0057] It should be noted that in the initial shape state (i.e., before the shape memory bracket 200 is deformed by heat), the longitudinal section (i.e. the section in the length direction) of the deformable part 211b can be a straight line, an arc, or an S-shape, etc., and there is no limitation on this. In this embodiment, the longitudinal section of the deformable part 211b is preferably S-shaped. Since this S-shaped structure has two bending segments, these bending segments can more flexibly coordinate the deformation during the deformation of the single-pass shape memory beam 210, making the deformation of the beam more uniform and continuous, thereby further reducing local stress concentration.

[0058] It is worth mentioning that the heat source 400 in this application can be any heat source, and there is no limitation on it; in this embodiment, the heat source 400 is various forms of low-temperature heat energy (temperature not higher than 200°C) such as industrial waste heat, geothermal energy, solar thermal energy, human body heat, etc., and there is no limitation on it, as long as it can heat the single-pass shape memory beam 210 to above the austenite end temperature.

[0059] It is understandable that the two heat sources 4 can be fixed relative to the fixed support 1 or can move relative to the fixed support 1. There is no limitation on this, as long as the two single-pass shape memory beams 210 can be alternately heated to achieve the reciprocating vibration deformation of the entire shape memory support 200.

[0060] In this embodiment, as Figure 1As shown, in order to reduce costs, the two heat sources 4 are preferably fixed relative to the fixed bracket 1, and the positions of the two heat sources 4 are determined according to the first vibration offset position and the second vibration offset position of the shape memory bracket 200. The upper single-pass shape memory beam 210 is heated to restore its memory shape, which in turn pushes the lower single-pass shape memory beam 210 to deform during the restoration process. When the upper single-pass shape memory beam 210 has fully restored its shape, the shape memory support 200 is in the first vibration offset position. At this time, a heat source 400 is placed at a position that contacts the bottom, front, or back of the lower single-pass shape memory beam 210. Thus, the lower single-pass shape memory beam 210 will be heated by the heat source 400 and bent upward to restore its memory shape, which in turn pushes the upper single-pass shape memory beam 210 to deform during the restoration process. When the lower single-pass shape memory beam 210 has fully restored its shape, the shape memory support 200 is in the second vibration offset position. At this time, another heat source 400 is placed at a position that contacts the top, front, or back of the upper single-pass shape memory beam 210.

[0061] To reduce heat transfer between the upper heat source 400 and the lower single-pass shape memory beam 210, and between the lower heat source 400 and the upper single-pass shape memory beam 210, in this embodiment, when the shape memory support 200 is in the first vibration offset position, the lower heat source 400 is located below the lower single-pass shape memory beam 210 and contacts the heat source contact portion 211a of the lower single-pass shape memory beam 210; when the shape memory support 200 is in the second vibration offset position, the upper heat source 400 is located above the upper single-pass shape memory beam 210 and contacts the heat source contact portion 211a of the upper single-pass shape memory beam 210.

[0062] like Figure 1 As shown, the deformation energy conversion mechanism involved in this application includes a piezoelectric conversion module 310 and / or a magnetoelectric coupling module 320.

[0063] Specifically, such as Figure 1 and Figure 2 As shown, the piezoelectric conversion module 310 includes piezoelectric sheets 311 located on each of the single-pass shape memory beams 210. When the shape of the single-pass shape memory beam 210 changes, mechanical stress is generated. When this mechanical stress is applied to the piezoelectric sheet 311, it will cause the piezoelectric sheet 311 to generate a piezoelectric effect, thereby generating electricity. In order to prevent the mechanical stress borne by the piezoelectric sheet 311 from exceeding the allowable stress and causing the piezoelectric sheet 311 to break, the piezoelectric sheet 311 needs to be set on the upper surface and / or lower surface of each end of the suspended part 211 of the single-pass shape memory beam 210.

[0064] In this embodiment, as Figure 1 and Figure 3As shown, piezoelectric sheets 311 are provided on the upper and lower surfaces at both ends of each suspended part 211. The piezoelectric sheets 311 are fixed to the single-pass shape memory beam 210 by mechanical coupling methods such as bonding or coating (i.e., coating the memory beam with piezoelectric material to form a piezoelectric sheet). There are no restrictions on this, as long as it can effectively transmit strain.

[0065] like Figure 1 As shown, the magnetoelectric coupling module 320 includes an excitation coil 321 and a permanent magnet 322. One of the excitation coil 321 and the permanent magnet 322 is disposed on the fixed support 100, and the other is disposed on the shape memory support 200. Thus, when the shape memory support 200 reciprocates and deforms relative to the fixed support 100, relative motion will occur between the excitation coil 321 and the permanent magnet 322, causing a change in the magnetic flux passing through the excitation coil 321, thereby generating an induced electromotive force in the excitation coil 321, and then generating an induced current. In this embodiment, the permanent magnet 322 is disposed on the fixed support 100, and the excitation coil 321 is disposed on the shape memory support 200.

[0066] It should be noted that the permanent magnet 322 can be any existing permanent magnet such as a neodymium iron boron magnet or an alnico magnet; in this embodiment, the permanent magnet 322 is preferably a neodymium iron boron magnet.

[0067] Since both the magnetoelectric coupling module 320 and the piezoelectric module 310 convert the deformation energy of the shape memory bracket 200 into electrical energy, when both the piezoelectric conversion module 310 and the magnetoelectric coupling module 320 are set at the same time, more electrical energy can be obtained based on the deformation of the shape memory bracket 200, thereby further improving the cost efficiency of thermal energy conversion.

[0068] It is worth mentioning that the structural form of the heat-insulating force transmission frame in the shape memory bracket 200 and the arrangement angle of the two single-pass shape memory beams 210 (such as parallel arrangement or angled arrangement) can be varied, as long as the power transmission between the two single-pass shape memory beams 210 can be achieved. Based on this, the shape memory bracket 200 includes, but is not limited to, the following embodiments.

[0069] Shape Memory Support 200 Example 1

[0070] like Figure 3 and Figure 4As shown, two single-pass shape memory beams 210 are arranged in parallel, and their heat-insulating force transmission frame is a coil support 220; the coil support 220 is used to connect the heat source contact parts 211a of the two single-pass shape memory beams 210; wherein, the coil support 220 is used to install the excitation coil 321, and the coil support 220 is made of heat-insulating materials with high mechanical strength such as polyetheretherketone or polyetherimide, so as to reduce or avoid temperature transfer between the two single-pass shape memory beams 210; in this embodiment, the material of the coil support 220 is polyetheretherketone.

[0071] It should be noted that the heat source contact part 211a of the coil support 220 and the single-pass shape memory beam 210 must be vertically connected to ensure good force transmission performance.

[0072] Figure 12 An exploded view shows one embodiment of the coil support 220. For example... Figure 12 As shown, the coil support 220 includes a first support 221 and a second support 222. The first support 221 includes a vertically fixed first mounting base 221a and a hollow cylinder 221b. The second support 222 includes a vertically fixed second mounting base 222a and a insertion shaft 222b, with the insertion shaft 222b capable of being inserted into the hollow cylinder 221b. Through the insertion of the hollow cylinder 221b and the insertion shaft 222b, the first support 221 and the second support 222 can be assembled together to form the coil support 220. Then, the two mounting bases of the coil support 220 are bonded and fixed to the two heat source contact portions 211a. To ensure the stability of the assembled first support 221 and the second support 222, adhesive can be dripped into the gap between the hollow cylinder 221b and the insertion shaft 222b to reinforce the connection.

[0073] Of course, in other embodiments, the coil support 220 may also include only a hollow cylinder 221b, a first mounting base 221a and a second mounting base 222a; wherein the first mounting base 221a and the second mounting base 222a are vertically fixed to both ends of the hollow cylinder 221b, and the three are integrally formed.

[0074] Shape memory bracket 200 Example 2

[0075] like Figure 5 As shown, the difference between Embodiment 2 and Embodiment 1 of the shape memory bracket is only that the projections of the two single-pass shape memory beams 210 in the same horizontal plane are intersected.

[0076] It is understandable that the intersection angle θ of the projections of the two one-way shape memory beams 210 onto the same horizontal plane satisfies: 0° < θ ≤ 90°, and no restrictions are imposed on this.

[0077] Shape memory bracket 200 Example 3

[0078] like Figure 6 As shown, the difference between Embodiment 3 and Embodiment 1 of the shape memory bracket is only that a force transmission beam 230 is added between the two single-pass shape memory beams 210. The length direction of the force transmission beam 230 is the same as that of the single-pass shape memory beam 210, and the two ends of the force transmission beam 230 are installed on the fixed bracket 100 by bolts or clamps or other detachable fixing methods to form a fixed support beam. At the same time, the suspended parts of the two adjacent beams are connected by coil brackets 220, and the vertical center lines of each coil bracket 220 coincide. At this time, the force transmission beam 230 and each coil bracket 220 together constitute a heat-insulating force transmission frame.

[0079] In addition to transmitting force, the force transmission beam 230 is also used to install piezoelectric sheets 311; the piezoelectric sheets 311 need to be installed on the upper and lower surfaces of each end of the suspended part of the force transmission beam 230.

[0080] It is understandable that the number of force transmission beams 230 can be determined according to the actual situation and is not limited thereto; the material of force transmission beams 230 can be the same as that of single-pass shape memory beams 210 (in this case, force transmission beams 230 are not subjected to shape memory processing), or other materials that can be repeatedly bent and deformed, such as stainless steel, can be used, and is not limited thereto.

[0081] Shape Memory Support 200 Example 4

[0082] like Figure 7 As shown, the difference between Embodiment 4 and Embodiment 3 of the shape memory bracket lies only in that: the force transmission beam 230 and the single-pass shape memory beam 210 are projected perpendicularly in the same horizontal plane, and one end of the force transmission beam 230 is installed on the fixed bracket 100 by a detachable fixing method such as bolts or clamps, while the other end of the force transmission beam 230 is connected to the adjacent beam through the coil bracket 220. In this case, piezoelectric sheets 311 are arranged on the upper and lower surfaces of the end of the force transmission beam 230 connected to the fixed bracket 100.

[0083] Based on the shape memory bracket embodiment provided above, a corresponding fixed bracket 100 embodiment is provided.

[0084] Fixed bracket embodiment 1

[0085] Figure 8 A structural diagram of a fixing bracket for mounting a shape memory bracket, as shown in Embodiment 1, is illustrated. Figure 8As shown, the fixed bracket 100 includes two memory beam mounting plates 110 arranged vertically and vertically, and a heat insulation block 120. The memory beam mounting plate 110 has a U-shaped structure, including a longitudinal mounting plate and two protruding plates, both located on the same side of the longitudinal mounting plate. The heat insulation block 120 is located between the two memory beam mounting plates 110, and all three are fixedly connected together by bolts. At this point, each protruding plate is in a cantilever state. Thus, the two connecting parts 212 of the upper shape memory beam 210 can be fixed to the two protruding plates of the upper memory beam mounting plate 110 by bolts, and the two connecting parts 212 of the lower shape memory beam 210 can be fixed to the two protruding plates of the lower memory beam mounting plate 110 by bolts.

[0086] It should be noted that the permanent magnet 322 can be installed on the upper memory beam mounting plate 110 or the lower memory beam mounting plate 110 longitudinal mounting plate, or it can be installed between two longitudinal mounting plates (in which case, the heat insulation block 120 is provided with a permanent magnet mounting cavity).

[0087] It should be noted that the bolts are non-magnetic to avoid being magnetized by the permanent magnet 322.

[0088] Furthermore, the protruding plate is provided with a receiving groove 110a for fitting and placing the connecting part 212, so as to prevent the connecting part 212 from shifting when it is bolted to the protruding plate.

[0089] It should be noted that the memory beam mounting plate 110 is made of high-strength non-magnetic materials such as non-magnetic stainless steel (such as 0Cr21Ni6Mn9N, 0Cr16Ni22Mn9Mo2, etc.) and titanium alloy, and there are no restrictions on this.

[0090] It should be noted that the heat insulation block 120 is made of heat insulation materials with high mechanical strength, such as polyetheretherketone or polyetherimide, and there is no limitation on this; in this embodiment, the heat insulation block 120 is preferably made of polyetheretherketone.

[0091] Of course, the entire heat insulation bracket 100 can also be an integrated structure made of high-strength, high-heat-insulating, non-magnetic materials such as high-entropy porous boride ceramic materials or fiber-reinforced porous ceramic matrix composite materials, as long as it can satisfy the fixing of both ends of each single-pass shape memory beam 210.

[0092] Fixed bracket embodiment 2

[0093] Figure 9 A structural diagram of the fixing bracket for mounting the shape memory bracket in Embodiment 2 is shown. Figure 9As shown, the fixed bracket 100 includes a hollow square frame 130, two upper mounting plates 131, and two lower mounting plates 132. The two upper mounting plates 131 are positioned opposite each other on the left and right side walls of the hollow square frame 130, and the two lower mounting plates 132 are positioned opposite each other on the front and rear side walls of the hollow square frame 130. Thus, the two connecting parts 212 of the upper shape memory beam 210 can be fixed to the two upper mounting plates 131 respectively by bolts, and the two connecting parts 212 of the lower shape memory beam 210 can be fixed to the two lower mounting plates 132 respectively by bolts. Furthermore, a cover plate 140 for mounting the permanent magnet 322 can be provided on the top of the hollow square frame 130, and the cover plate 140 needs to have a clearance opening to avoid the shape memory bracket 200.

[0094] It should be noted that the bolts are non-magnetic to avoid being magnetized by the permanent magnet 322.

[0095] Furthermore, both the upper mounting plate 131 and the lower mounting plate 132 are provided with receiving grooves 110a for matching and placing the connecting part 212, so as to prevent the connecting part 212 from shifting when the bolts are fixed.

[0096] The entire thermal insulation bracket 100 can be an integrated structure made of high-strength, high-thermal-insulation, non-magnetic materials such as high-entropy porous boride ceramic materials or fiber-reinforced porous ceramic matrix composite materials, as long as it can satisfy the fixing of both ends of each single-pass shape memory beam 210.

[0097] Fixed bracket embodiment three

[0098] Figure 10 A structural diagram of the fixing bracket for mounting the shape memory bracket in Embodiment 3 is shown. Figure 10 As shown, the main difference between the fixed bracket 100 of this embodiment 3 and the fixed bracket 100 of embodiment 1 is that: a force transmission beam mounting plate 150 is also provided between the two shape memory beam mounting plates 110, the number of force transmission beam mounting plates 150 is determined according to the number of force transmission beams 230, and a heat insulation block 120 is provided between two adjacent beam mounting plates; wherein, the structure of the force transmission beam mounting plate 150 is the same as that of the shape memory beam mounting plate 110, so as to realize the bolt fixing at both ends of the force transmission beam 230.

[0099] Fixed bracket embodiment four

[0100] Figure 11 A structural diagram of the fixing bracket for mounting the shape memory bracket in Embodiment 4 is shown. Figure 11As shown, the main difference between the fixed bracket 100 of this embodiment 4 and the fixed bracket 100 of embodiment 3 is the structural form of the force transmission beam mounting plate 150. The force transmission beam mounting plate 150 of this embodiment is generally square in shape, and has a slot 151 on it, so that one end of the force transmission beam 23 can be inserted into the slot 151 and then bolted to make the force transmission beam 23 form a cantilever beam structure.

[0101] To facilitate understanding, we will now combine... Figure 13 The working principle of the thermoelectric conversion device involved in this application is explained.

[0102] like Figure 13 As shown, the upper heat source 400 first heats the upper single-pass shape memory beam 210, which is in its initial state (i.e., non-shape memory state), to below the austenite end temperature, causing the upper single-pass shape memory beam 210 to bend and deform towards the lower single-pass shape memory beam 210 to restore its shape memory. During the process of restoring its shape memory, the upper single-pass shape memory beam 210 moves away from the corresponding heat source 400 (i.e., the upper heat source) while generating a driving force to push the lower single-pass shape memory beam 210 to bend and deform downwards, until the lower single-pass shape memory beam 210 comes into contact with the corresponding heat source (i.e., the lower heat source) and is heated to the austenite end temperature by the corresponding heat source. Above the temperature; at this point, the upper single-pass shape memory beam 210 has cooled to below the martensite initiation temperature. Thus, the lower heated single-pass shape memory beam 210 will begin to bend upward to restore its memory shape. During the process of restoring its memory shape, while moving away from the corresponding heat source (i.e., the lower heat source), it pushes the cooled single-pass shape memory beam 210 upward to contact the corresponding heat source. In this way, the two single-pass shape memory beams 210 can be alternately heated, so that the shape memory support 200 where the single-pass shape memory beam 210 is located will cyclically deform at the first vibration offset position and the second vibration offset position. The deformation energy conversion mechanism generates continuous electricity in response to the cyclic deformation of the shape memory support 200.

[0103] Therefore, it can be seen that the single-pass shape memory beam 210 above is actually in its initial shape state (such as...). Figure 13 The image above shows the shape state of the single-pass shape memory beam 210 and the memory shape state (e.g., ...). Figure 13 The top single-pass shape memory beam 210 in the image below switches back and forth between different shape states; while the bottom single-pass shape memory beam 210 is actually remembering its shape state (i.e., the initial shape state of the bottom single-pass shape memory beam 210, see details). Figure 13 The image above shows the shape and deformation states of the single-pass shape memory beam 210 (as shown in the lower part of the image). Figure 13 The shape state of the single-pass shape memory beam 210 in the lower part of the image below switches back and forth.

[0104] Therefore, in this embodiment, the initial shape state of the upper single-pass shape memory beam 210 is the same as the memory shape state of the lower single-pass shape memory beam 210, and the memory shape state of the upper single-pass shape memory beam 210 is the same as the deformation state of the lower single-pass shape memory beam 210.

[0105] In a further embodiment, such as Figure 14 As shown, the memory shape state of the upper single-pass shape memory beam 210 is completely opposite to that of the lower single-pass shape memory beam 210, so that each single-pass shape memory beam 210 has enough time to cool down to below the martensite initiation temperature during the process of restoring its memory shape.

[0106] For ease of understanding, Figure 14 Taking the two single-pass shape memory beams 210 shown as examples, the fabrication method of each single-pass shape memory beam 210 made of shape memory alloy is described. The fabrication method of each single-pass shape memory beam 210 is as follows:

[0107] S1. Deposit a copper layer on a silicon wafer as a sacrificial layer, and then deposit a shape memory alloy layer to form a shape memory alloy thin film.

[0108] It should be noted that the shape memory alloy material is not limited to nickel-titanium alloy or copper-aluminum-nickel alloy, etc.; in this embodiment, the shape memory material is preferably nickel-titanium alloy.

[0109] S2. Immerse the silicon wafer with the deposited sacrificial layer and shape memory alloy film in a copper etching solution to obtain the detached shape memory alloy film.

[0110] S3. Cut the shape memory alloy film to obtain two planar shape memory blanks;

[0111] S4. Perform memory processing on the two memory blanks to obtain two single-pass shape memory beams 210 in the memory shape;

[0112] Since memory processing is an existing technology, it will not be discussed further.

[0113] S5. A single-pass shape memory beam 210 is subjected to reverse deformation in a cooled state so that the deformed shape is completely opposite to the memory shape. At this time, the single-pass shape memory beam 210 that has been reverse deformed is the upper single-pass shape memory beam 210, and the single-pass shape memory beam 210 that has not been reverse deformed is the lower single-pass shape memory beam 210.

[0114] Optionally, step S3 further includes: coating a piezoelectric material at a preset position on the memory blank to form a piezoelectric sheet 311; in this way, it can be ensured that the piezoelectric sheet 311 can deform together during the subsequent memory processing, ensuring the fit between the two.

[0115] The piezoelectric material can be any material with a piezoelectric effect, such as lead titanate or barium titanate, and is not limited thereto; in this embodiment, the piezoelectric material is lead titanate.

[0116] To collect and utilize the electricity generated by the deformation energy conversion mechanism, the thermoelectric conversion device also includes an energy harvesting circuit; such as Figure 15 As shown, the energy harvesting circuit includes a piezoelectric rectifier circuit 510, a magnetoelectric rectifier circuit 520, an energy storage circuit 530, and a voltage regulation circuit 540.

[0117] Specifically, such as Figure 16 As shown, both the piezoelectric rectifier circuit 510 and the magnetoelectric rectifier circuit 520 include bridge rectifiers; wherein, the bridge rectifier in the piezoelectric rectifier circuit 510 is used to convert the electrical energy generated by the piezoelectric conversion module 310 into DC power, and the bridge rectifier in the magnetoelectric rectifier circuit 520 is used to convert the electrical energy generated by the magnetoelectric coupling module 320 into DC power. The energy storage circuit 530 includes capacitors C1 and C2. In the piezoelectric rectifier circuit 510, the positive terminal of the bridge rectifier is connected to the positive terminal of capacitor C1 via a reverse-blocking diode D1, and the negative terminal of the bridge rectifier is connected to the negative terminal of capacitor C1, so that the electrical energy converted and output by the piezoelectric rectifier circuit 510 is stored in capacitor C1. In the magnetoelectric rectifier circuit 520, the positive terminal of the bridge rectifier is connected to the positive terminal of capacitor C2 via a reverse-blocking diode D2, and the negative terminal of the bridge rectifier is connected to the negative terminal of capacitor C2, so that the electrical energy converted and output by the magnetoelectric rectifier circuit 520 is stored in capacitor C2. The electrical energy stored in capacitors C1 and C2 is regulated and transformed by a voltage regulating circuit to reach the target voltage before being output. In this embodiment, the bridge rectifiers are all full-bridge rectifiers.

[0118] It should be noted that the voltage regulating circuit 540 can adopt existing DC voltage circuits such as patents CN2021227983098 and CN202322405943.X, and there is no limitation on this.

[0119] In summary, the single-pass shape memory beam 210 used in this application, compared to the double-pass shape memory beam, has advantages such as simpler manufacturing process, lower cost, and higher cycle stability (remaining stable even after thousands of cycles). This effectively reduces the long-term use cost of the shape memory beam, thereby reducing the thermal energy conversion cost efficiency of this application and facilitating its widespread application. Furthermore, the simultaneous arrangement of the piezoelectric conversion module and the magnetoelectric coupling module helps to obtain more electricity, further reducing the thermal energy conversion cost efficiency of this application. Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial applicability.

[0120] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A thermoelectric conversion device, characterized in that, The device includes a shape memory support (200), a deformation energy conversion mechanism, and two heat sources (400). The shape memory support (200) is mounted on a fixed support (100). The shape memory support (200) includes two single-pass shape memory beams (210), which are used to receive heat from the two heat sources (400) respectively. The two single-pass shape memory beams (210) are configured to alternately receive heat from the corresponding heat sources, causing the shape memory support (200) to reciprocate between a first vibration offset position and a second vibration offset position. The deformation energy conversion mechanism is configured to generate electricity in response to the deformation of the shape memory support (200). Each single-pass shape memory beam (210) includes a suspended portion (211) and connecting portions (212) located at both ends of the suspended portion (211). Each connecting part (212) is mounted on a fixed bracket (100); the deformation energy conversion mechanism includes a piezoelectric conversion module (310) and / or a magnetoelectric coupling module (320); the magnetoelectric coupling module (320) includes an excitation coil (321) and a permanent magnet (322) that cooperates with the excitation coil (321); one of the excitation coil (321) and the corresponding permanent magnet is set on a shape memory bracket (200), and the other is set on a fixed bracket (100); the shape memory bracket (200) includes a coil bracket (220), which is made of heat insulation material; the coil bracket (220) is used to connect the suspended parts (211) of two single-pass shape memory beams (210); the excitation coil (321) is mounted on the coil bracket (220), and the permanent magnet (322) is set on the fixed bracket (100).

2. The thermoelectric conversion device according to claim 1, characterized in that, The piezoelectric conversion module (310) includes piezoelectric sheets arranged at each end of the suspended portion (211).

3. The thermoelectric conversion device according to claim 1, characterized in that, Two single-pass shape memory beams (210) are set in parallel.

4. A thermoelectric conversion device according to any one of claims 1 to 3, characterized in that, The single-pass shape memory beam (210) has a symmetrical structure; the suspended part (211) of the single-pass shape memory beam (210) includes a heat source contact part (211a) and a deformation part (211b) located at both ends of the heat source contact part (211a); The heat source contact part (211a) is used to contact the corresponding heat source surface.

5. The thermoelectric conversion device according to claim 4, characterized in that, The heat source contact part (211a), deformation part (211b) and connecting part (220) of the shape memory beam (210) have a smooth transition.

6. The thermoelectric conversion device according to claim 5, characterized in that, In its initial state, the deformation portion (211b) of the shape memory beam (210) is S-shaped.

7. The thermoelectric conversion device according to claim 1, characterized in that, The thermoelectric conversion device includes an energy harvesting circuit; the energy harvesting circuit is used to collect and output the electricity generated by the deformation energy conversion mechanism.

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