Cell architecture for enhanced thermal management of epitaxial growth processing chambers

Abstract

An epitaxial growth processing chamber has a component having a giant cell support structure. The giant cell support structure has interconnected solid supports defining fluid connection apertures. A component configured for use in an epitaxial growth process chamber has a giant cell support structure having an interconnected solid support defining a fluid connection aperture. The component may be one or more of a lower liner, an upper liner, a base, a drain cap, an injection ring, and an injection cap. The interconnected solid support may include a material, such as a metal, ceramic or glass material, a polymeric material, and combinations thereof. The components may have a standalone configuration, a plate support configuration, an interlayer configuration, a surface sealing configuration, and a solid polymer filling configuration.

Description

Technical Field

[0001]

[0014] Embodiments described herein relate generally to equipment for semiconductor manufacturing, and more particularly to substrate processing systems with enhanced thermal management. Background Art

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated and micro-scale devices. During fabrication, various parameters can affect the functionality of the small features formed on the substrate. For example, the temperature uniformity of the substrate or the temperature of processing chamber components can affect chamber production yield.

[0003] In epitaxial growth processing chambers that can be used to form integrated circuits on substrates, a set of quartz liners positioned between the edge of the substrate and the chamber walls provides some measure of thermal shielding from other processing chamber components. However, as semiconductor processing advances, improved temperature control is needed. Summary of the Invention

[0004] An epitaxial growth processing chamber includes a component having a megacell support structure. The megacell support structure includes interconnected solid support members defining fluid connection holes. One or more of the components may be a lower liner, an upper liner, a base, a drain cap, an injection ring, an injection cap, or a combination thereof. The interconnected support members may be composed of a material selected from metal, ceramic, or glass materials, polymeric materials, and combinations thereof. The megacell support structure may have a porosity ranging from approximately 60% to approximately 99% of the volume of the megacell support structure. The pores of the megacell support structure may have an average pore size ranging from approximately 1 to approximately 5000 microns. The megacell support structure may have a permeability ranging from approximately 20% to approximately 100% of the pores of the megacell support structure. The component having the megacell support structure may be configured as a freestanding component, a plate-supported configuration, a sandwich configuration, a surface-sealed configuration, or a solid polymer-filled configuration. The component in any of these configurations may be a monolithic component. A component in a plate-supported configuration may include a support plate comprising a material similar to that of the interconnected solid support members. A component in a sandwich configuration may include a first plate and a second plate, each of which comprises a material similar to the interconnected physical support. A component in a sandwich configuration may include a configuration in which the first plate and the second plate each comprise a material different from the other. A component in a surface seal configuration may include an encapsulation surface comprising a material different from the interconnected physical support. A component in a surface seal configuration may further include a fluid within the megacell support structure.

[0005] A component configured for use in an epitaxial growth processing chamber has a megacell support structure having interconnected solid supports defining fluid connection holes. The component can be one or more of a lower liner, an upper liner, a base, a drain cap, an injection ring, and an injection cap. The interconnected solid supports can comprise materials such as metals, ceramic or glass materials, polymeric materials, and combinations thereof. The megacell support structure of the component can have a porosity ranging from about 60% to about 99% of the volume of the megacell support structure. The pores of the megacell support structure for the component can have an average pore size ranging from about 1 to about 5000 microns. The megacell support structure of the component can have a permeability ranging from about 20% to about 100% of the pores. The component can have a freestanding megacell support structure configuration, a plate support configuration, a sandwich configuration, a surface seal configuration, or a solid polymer filled configuration. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] To provide a detailed understanding of the manner in which the disclosed features are described, a more detailed description of the disclosure may be provided with reference to one or more embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only one or more of several embodiments; thus, the one or more embodiments provided in the accompanying drawings should not be construed as limiting the broadest interpretation of the detailed scope. Other effective embodiments, such as those described in the embodiments, may be considered part of the envisioned detailed scope.

[0007] Figure 1 is a schematic side cross-sectional view of an epitaxial growth processing chamber according to one or more embodiments.

[0008] Figures 2A to 2F A cross-sectional representation of a portion of a megacell support structure for one or more components used with an epitaxial growth processing chamber is shown in accordance with one or more embodiments.

[0009] Figure 3A and Figure 3B Top and side views, respectively, of components comprising a megacell support structure configured for use with an epitaxial growth processing chamber are provided in accordance with one or more embodiments.

[0010] Figure 3C According to one or more embodiments, a method for Figure 3A Independent mega-unit support structure configuration for components.

[0011] Figure 3D According to one or more embodiments, a method for Figure 3A The surface sealing giant unit support structure configuration of the component.

[0012] Figure 4A and Figure 4BSide and perspective views, respectively, are provided of components including a micro-cell support structure configured for use with an epitaxial growth processing chamber according to one or more embodiments.

[0013] Figure 4C According to one or more embodiments, a method for Figure 4A Independent mega-unit support structure configuration for components.

[0014] Figure 4D A megacell support structure configuration for surface sealing of the component of FIG. 4 is provided in accordance with one or more embodiments.

[0015] Figure 5A-1 provides a top-down view of a non-embodiment component for use with a processing chamber for general discussion purposes. Figure 5A-2 provides an uncovered view along view line CC of a non-embodiment component for use with the processing chamber provided for Figure 5A-1 for general discussion purposes.

[0016] Figures 5B-1, 5C-1, and 5D-1 provide top-down views of components comprising a megacell support structure for use with an epitaxial growth processing chamber according to one or more embodiments. Figures 5B-2, 5C-2, and 5D-2 provide uncovered views along view lines CC', CC", and CC'" of the components comprising a megacell support structure for use with an epitaxial growth processing chamber provided in Figures 5B-1, 5C-1, and 5D-1, respectively, according to one or more embodiments.

[0017] Figure 6A-1 provides a top-down view of a non-embodiment component for use with a processing chamber for general discussion purposes. Figure 6A-2 provides an uncovered view along view line EE of the non-embodiment component provided in Figure 6A-1 for use with a processing chamber for general discussion purposes.

[0018] 6B-2, 6C-2, and 6D-2 each provide an exposed view along view line EE of the components provided in FIG. 6A-1 including a megacell support structure for use with an epitaxial growth processing chamber according to one or more embodiments.

[0019] Figure 7A A perspective view of several components comprising a micro-cell support structure configured for use with an epitaxial growth processing chamber is provided, according to one or more embodiments.

[0020] Figure 7B 、 Figure 7C ,and Figure 7D Each provides a method according to one or more embodiments Figure 7AAn exposé along view line FF of components comprising a megacell support structure for use with an epitaxial growth processing chamber is provided in FIG.

[0021] In this disclosure, the terms "top," "bottom," "side," "above," "below," "up," "down," "upward," "downward," "horizontal," "vertical," and the like do not refer to absolute directions. Instead, these terms refer to directions relative to a non-specific reference plane. This non-specific reference plane can be vertical, horizontal, or oriented at another angle.

[0022] To facilitate understanding and better appreciate the scope of the description, in some instances, the same or related reference numerals (where possible) have been used to designate the same or similar elements that are common to the figures. Those skilled in the art will appreciate that elements and features of one embodiment may be beneficially incorporated into one or more other embodiments without further recitation. DETAILED DESCRIPTION

[0023] In the following disclosure, reference may be made to one or more embodiments. However, those skilled in the art understand that the present disclosure is not limited to the specifically described embodiments. On the contrary, any combination of features and elements, whether or not with respect to different embodiments, is intended to implement and practice one or more embodiments provided by the present disclosure. In addition, although one or more embodiments presented in the present disclosure may achieve advantages over other possible solutions, prior art (if any), and combinations thereof, whether a given embodiment achieves a particular advantage is not limited by the present disclosure. The aspects, features, embodiments, and advantages provided are merely illustrative. Unless expressly stated in one or more claims, these are not considered elements or limitations of the appended claims. Similarly, those skilled in the art should not interpret reference to "the present disclosure" as a summary of any disclosed objectives.

[0024] The present disclosure relates to alternative compositions of various components of an epitaxial growth processing chamber that can provide improved thermal insulation and shielding over previously known materials and configurations. We are well aware that in the microprocessor manufacturing industry, problems with substrate temperature non-uniformity can arise during the use of epitaxial growth processing chambers. Non-uniform and out-of-specification temperatures at the ends of the substrate can result in reduced product yield due to defective materials. Inadequate thermal shielding in portions of the processing vessel, particularly along portions of the vessel that are in contact with the relatively cool external environment, can result in excessive power consumption for heating and maintaining the temperature within the interior of the processing chamber. Failure to control heat dissipation (allowing heat to be lost / gained too quickly or lost / gained too slowly) can strain components through thermal shock or thermal degradation, thereby shortening their operating life. Increased maintenance of the processing chamber also reduces overall product yield due to downtime.

[0025] An approach to controlled shielding of thermal energy not previously understood in the art is the use of components comprising a megacell support structure, which is a network of interconnected physical supports forming pores. The use of metal, ceramic, glass, or polymer interconnected physical supports, along with potential support plates or enclosures made of gas, liquid, or even different solids, not only provides the ability to absorb electromagnetic (EM) energy in the form of light and heat, but also retains this energy and slowly re-emit it in the form of heated gas, preventing thermal shock. Similarly, configurations can be made so that the interconnected physical supports and protective layers reflect EM energy, conserving and redistributing energy not absorbed by the substrate being processed, thereby saving energy.

[0026] Metal, ceramic, glass, or polymer macrostructures have permeability and a significant total pore volume fraction. Integrating or replacing certain components of a processing chamber with such architectures is believed to impact not only the energy management of the processing chamber, but also the effectiveness of the process itself through a combination of energy reflection and shielding, as well as heat dissipation.

[0027] Figure 1 FIG2 is a schematic side cross-sectional view of an epitaxial growth processing chamber 100. The processing chamber 100 is an epitaxial deposition chamber. Such a processing chamber 100 can be used to grow epitaxial films on a substrate 102. The processing chamber 100 can generate a cross flow of precursors across a top surface 150 of the substrate 102.

[0028] The processing chamber 100 may include an upper body 156, a lower body 148 disposed below the upper body 156, and a base 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the base 112, and the lower body 148 may form a chamber body. A substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper lamps 141, and a plurality of lower lamps 143 may be positioned within the chamber body. The lower window 110 also extends downward, and a shaft 118 extends through the lower window. The base 112 may couple the upper body 156 and the lower body 148 together through the upper window 108 and the lower window 110, respectively, such as Figure 1 1. As shown, a hermetically sealed volume is formed. A controller 120 can be in communication with the processing chamber 100. The controller can be used to control processes and methods, such as the operation of an epitaxial growth processing chamber.

[0029] The substrate support 106 may be positioned between the upper window 108 and the lower window 110 . The substrate support 106 may include a supporting surface 123 that supports the substrate 102 .

[0030] A plurality of upper lamps 141 may be disposed between the upper window and the lid 154. The plurality of upper lamps 141 may form part of an upper lamp module 155. The lid 154 may include a plurality of sensors (not shown) for measuring the temperature within the processing chamber 100. The upper window 108 may be an upper dome and formed of an energy-transmissive material, such as quartz.

[0031] The plurality of upper lights 141 may form a series of concentric rings, such as two, three, or more groups of rings of upper lights 141 as part of the upper light module 155 . Figure 1 The upper lamp module 155 in FIG. 1 may also include a number of annular reflectors having concave reflective surfaces 181 positioned between a pair of two adjacent concentric rings of the upper lamp 141 or between the concentric rings of the upper lamp 141 and the upper body 156. The upper lamp module 155 may also include a reflector having a flat reflective surface 182 positioned between a pair of two adjacent concentric rings or within the rings of the upper lamp 141. Each reflective surface 181, 182 may have a surface configured to reflect EM radiation downward onto a specific area of ​​the substrate 102.

[0032] In the processing chamber 100, the upper lamp module 155 may also have a heat shield 190 positioned around the outer circumference of the outermost concentric ring of upper lamps 141. The heat shield 190 may have a coating for reflecting EM radiation back into the interior of the upper lamp module 155. The heat shield 190 may also help insulate the processing chamber 100, thereby protecting the upper lamp module 155 from rapid temperature changes. Insulation, such as provided by the heat shield 190, should provide gradual temperature increases and decreases to prevent thermal shock to the components of the upper lamp module 155, which may extend the operating life of the components of the upper lamp module 155. The upper lamp module 155 may have more than one heat shield 190, including a heat shield positioned between each concentric ring of the lamp module. In such a case, each heat shield 190 may be configured to protect the lower portion of the lamp module in a similar manner.

[0033] The plurality of lower lamps 143 may be positioned between the lower window 110 and the floor 152 of the processing chamber 100. The plurality of lower lamps 143 form a portion of a lower lamp module 145. The lower window 110 may be formed of an energy transmissive material, such as quartz.

[0034] The plurality of lower lights 143 may form a series of concentric rings, such as two, three, or more groups of rings of lower lights 143 as part of the lower light module 145 . Figure 1The lower lamp module 145 in FIG. 1 may also include reflectors having concave reflective surfaces 185 positioned between a pair of two adjacent concentric rings of the upper lamps 141 or between the concentric rings of the lower lamps 143 and the lower body 148. The lower lamp module 145 may also include reflectors having flat reflective surfaces 186 positioned between a pair of two adjacent concentric rings or within the rings of the lower lamps 143. Each reflective surface 185, 186 may have a surface configured to reflect EM radiation upward back into the processing chamber 100.

[0035] In the processing chamber 100, the lower lamp module 145 can also have a heat shield 192 positioned around the outside circumference of the outermost concentric ring of lower lamps 143. In some cases, the heat shield 192 can have an outer coating for reflecting EM radiation back into the interior of the lower lamp module 145. The heat shield 192 helps insulate the processing chamber 100, which protects the lower lamp module 145 from rapid temperature changes. Similar to the upper lamp module, the lower lamp module can have more than one heat shield.

[0036] The lower lamp module 145 in the processing chamber 100 also shows a conical reflector 194. The conical reflector 194 is positioned around the outer circumference of the shaft 118, near the innermost ring of lower lamps 143. The conical reflector 194 is configured on an outwardly facing surface (reflective surface) to reflect any EM radiation from the innermost lower lamp 143 outward and upward. The conical reflector 194 can also be configured as an insulator to prevent rapid thermal transitions on that portion of the lower window 110 when the lower lamp 143 is in operation. This can prevent the formation of severe thermal gradients that move upward from the lowest portion of the shaft 118 and lower window 110 when the lower lamp 143 is activated / deactivated. The conical reflector 194 can also prevent the formation of cyclic thermal stresses in the material of the lower window 110, which is often made of quartz, by slowing the heating and cooling processes.

[0037] The processing volume 136 and the purge volume 138 can be defined between the upper window 108 and the lower window 110. The processing volume 136 and the purge volume 138 can be portions of a larger interior volume defined at least in part by the upper window 108, the lower window 110, and one or more liners. The processing chamber 100 includes a lower liner 111 aligned at least partially below the substrate support 106 and an upper liner 113 aligned at least partially above the substrate support 106. Figure 1 The upper liner 113 and the lower liner 111 shown in FIG. 1 are positioned along the inner surface of the pedestal 112 to protect the pedestal 112 from reactive gases introduced and used during deposition operations, cleaning operations, or both.

[0038] The interior volume may further include a substrate support 106. The substrate support 106 may include an upper surface on which the substrate 102 is positioned. The substrate support 106 may be coupled or connected to a shaft 118. The shaft 118 may be coupled or connected to a motion assembly 121. The motion assembly 121 may include one or more actuators, adjustment devices, or both that provide movement, adjustment, or both for the shaft 118, the substrate support 106, or both within the processing volume 136.

[0039] The substrate support 106 can be configured to define one or more lift pin holes 107. The lift pin holes 107 can be configured to receive lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. The stopper 104 includes a plurality of arms 105a, 105b, each arm including a lift pin stop onto which a lift pin 132 can rest when lowered.

[0040] The pedestal 112 may include one or more gas inlets 114, one or more purge gas inlets 164, and one or more gas exhaust outlets 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 may be located on a side of the pedestal 112 opposite the one or more gas exhaust outlets 116. The gas inlets 114 and the purge gas inlets 164 may each be located so that gas can flow parallel to the top surface 150 of the substrate 102 positioned within the processing volume 136. The gas inlets 114 may be fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 may be fluidly connected to one or more purge gas sources 162. The one or more gas exhaust outlets 116 may be fluidly connected to an exhaust pump 157.

[0041] The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (such as silicon (Si), phosphorus (P), and germanium (Ge)), one or more carrier gases (such as one or more of nitrogen (N2) and hydrogen (H2), and combinations thereof. The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases, such as argon (Ar), helium (He), and nitrogen (N2). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and chlorine (Cl). The one or more process gases may include silicon phosphide (SiP), phosphine (PH3), and combinations thereof. The one or more cleaning gases may include hydrochloric acid (HCl). The epitaxial growth processing chamber is configured to process such materials internally without significant degradation, and to operate normally with the presence of a human operator.

[0042] The one or more gas exhaust outlets 116 can be further coupled or connected to an exhaust cap 178. The exhaust cap 178 can fluidly connect the one or more gas exhaust outlets 116 to the exhaust pump 157. The exhaust cap 178 can facilitate controlling the deposition of layers on the substrate 102 by adjusting the pressure differential within the epitaxial growth processing chamber, which can affect the gas flow across the substrate surface and thereby affect the deposition rate. The exhaust cap 178 can be positioned on an opposite side of the processing chamber 100 relative to the pedestal 112.

[0043] In one or more embodiments, the epitaxial growth processing chamber is configured with one or more components comprising a megacell support structure. In one or more embodiments, the components configured for use in the epitaxial growth processing chamber comprise a megacell support structure. Non-limiting examples of such megacell support structures are Figures 2A to 2F Available in. Figures 2A to 2F Shown are several cross-sectional representations of portions of a megacell support structure that may be used in one or more components for use with an epitaxial growth processing chamber.

[0044] Figure 2A A cross-sectional representation of a portion of a megacell support structure is shown. The megacell support structure, such as the structure represented by rectangle 200, has interconnected solid supports 202 that form a three-dimensional (3D) interconnected network; a lattice or matrix. The spaces or interstices between the interconnected solid supports 202 define a plurality of voids or pores 204. In many cases, for the megacell support structure, the pores 204 are in fluid communication with each other, i.e., the pores are "open," as will be further described, such that a fluid (such as a gas or liquid) can flow in any axial direction through the megacell support structure shown by rectangle 200.

[0045] In one or more embodiments, the configuration of the interconnected physical supports of the megastructure support structure may be reticular, that is, random or varied, such as by Figure 2A The configuration of interconnected solid supports 202 in rectangle 200 is represented. Figure 2B A second cross-sectional representation of a portion of a second megacell support structure is shown. In one or more embodiments, the configuration of interconnected solid supports 212 may be a regular or repeating structure, such as a Figure 2B As shown in the figure, the interconnected solid support members 212 and the holes 214 are uniform, repeating, and regularly distributed. This configuration not only provides predictability in fluid flow, but also in heat transfer through the megacell support structure (assuming it is uniformly arranged).

[0046] The interconnected physical supports provide a greater degree of internal strength and resistance to deformation. The megacell support structure is load bearing and maintains shape under elevated thermal conditions and stresses from weight and pressure. In one or more embodiments, a useful megacell support structure does not thermally degrade or decompose at temperatures ranging from about 0°C to about 1000°C, such as from about 0 to about 100, 200, 300, 400, 500, 600, 700, 800, 900, and 1000°C, including all range combinations and endpoints. "Thermal degradation or decomposition" means that the material undergoes a chemical reaction in which chemical bonds are broken between bonded pairs of atoms, or a chemical reaction occurs that converts the heated material to another material, such as oxidation, such that the result of either reaction occurring throughout the material results in a loss of physical integrity on a macroscopic scale. In one or more embodiments, a useful megacell support structure is configured to be exposed to temperatures ranging from 1x10 -5 1.5 atmospheres, such as 0.00001, 0.0001, 0.001, 0.01, and 0.1 atmospheres to about 0.2, 0.3, 0.5, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, and 1.5 atmospheres, including all range combinations and endpoints. Pressure values ​​less than atmospheric pressure are considered to be "partial vacuum."

[0047] In one or more embodiments, the interconnected physical supports of the megacell support structure comprise a metal such as aluminum, an aluminum alloy, iron, an iron alloy, nickel, a nickel alloy, copper, a copper alloy, or combinations thereof. An example of a useful aluminum alloy is 6061 aluminum. An example of a useful iron alloy is stainless steel, such as 316L stainless steel. An example of a useful nickel alloy is Hastelloy. An example of a useful copper alloy is brass.

[0048] In one or more embodiments, the interconnected physical supports of the megacell support structure comprise a ceramic or glass material, such as reticulated vitreous / glassy carbon (RVC); silicon carbide-coated RVC; silicon carbide; silicon nitride; quartz, such as black quartz; carbon fiber products, such as carbon fiber fabric; or combinations thereof.

[0049] In one or more embodiments, the interconnected physical supports of the megacell support structure comprise a polymer material. In one or more embodiments, the polymer material is a thermoset polymer. In one or more embodiments, the polymer is a thermoplastic material. Polymers useful in this type of process are polymers having a glass transition temperature (Tg) greater than about 350°C. In one or more embodiments, the polymer can be a thermoset polymer, poly(ethylether ketone) (PEEK), a polyimide, or a combination thereof.

[0050] The megacellular support structure is characterized by the size of its pores relative to the total volume of the material. In one or more embodiments, the megacellular support structure has a void volume or porosity percentage ranging from about 60% to about 99% by volume, such as 60, 70, 75, 80, 85, and 90 to about 91, 92, 93, 94, 95, 96, 97, 98, and 99% by volume, including all combinations of ranges and endpoints.

[0051] In one or more embodiments, the average void or pore within the megastructure has a width in the range of from about 1 to about 5000 microns, such as 1, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 150, 200, 250, 300, 400, 500, 600, 700, 800, 900, 1000, 1250, 1500, 1750, and 2000 to 2250, 2500, 2750, 3000, 3250, 3500, 3750, 4000, 4250, 4500, 4750, and 5000 microns, including all range combinations and endpoints. "Width" refers to the measurable distance between two interconnected solid supports on opposite sides of a defined void or pore volume, similar to the opposite corner of a cube or the diameter of a sphere.

[0052] Compared to conventional process chamber components, the combination of the configuration of the megacell support structure and the number of holes not only reduces the weight of the component, but also provides significant thermal flexibility and stress distribution throughout the component. By being able to distribute stress throughout the structure and transfer thermal energy throughout the component, including to the fluid contained within and traversing the holes, the component including the megacell support structure is less likely to fail due to thermal stresses caused by thermal gradients formed during heating and cooling processes, unlike more solid parts that can experience repeated internal stresses due to gradients that traverse the solid structure and result in differential expansion rates, ultimately leading to stress-based failure or crack formation.

[0053] Another characteristic of the megacell support structure is permeability. It will be appreciated that the permeability of the megacell support structure allows fluid to flow within the interconnected physical supports to transfer energy. The permeability of the megacell support structure is reflected in the amount of pores that are not fluidically isolated from other pores; that is, the fluid connectivity between the pores. The permeability through the interconnected physical supports that define the pore structure allows gases (such as nitrogen, argon, helium, other noble gases, and other gases that are generally inert to the material) to flow naturally or be forced to flow through the megacell support structure, such as using a pressurized fluid flow or mass driver. Although one or more pores in the megacell support structure may be interconnected, some pores within the overall megacell support structure may not contribute to fluid connectivity through the overall megacell support structure. Such pores are fluidically isolated and act as insulating cavities, whether as a single pore or multiple pores, and do not contribute to the permeability of the megacell support structure.

[0054] In one or more embodiments, the megacell support structure has a permeability of greater than about 20% to 100%, such as greater than about 20, 30, 40, 50, 55, 60, 65, 70, 75, 80, 85, and 90 to about 91, 92, 93, 94, 95, 96, 97, 98, 99, 99.9, 99.99, 99.999, about 100, and 100% permeability, including all range combinations and endpoints.

[0055] Although in some cases, not all pores or voids may be fluidically connected to other pores, that is, some pores are closed, fluidically isolated, or "dead," this is not necessarily a deficiency or defect in the configuration of the microcellular structure. The lack of permeability in a few portions of the macrocellular support structure can allow the previously described vapor fluid to remain trapped within the support structure. These dead pores can then act as limited "heat sinks": absorbing energy transmitted through the interconnected physical support and allowing additional heat to be absorbed, thereby retaining this heat until the local interconnected physical support has sufficiently cooled, and then releasing this heat back into the cooled interconnected physical support. This allows components with some "closed" macrocellular structures to heat and cool somewhat more slowly than in "open" macrocellular support structure forms that do not have such isolated voids or pores. It is believed that the slower heating and cooling of components increases the lifespan of the components comprising such a macrocellular support structure and other components surrounding the structure by also slowing down their temperature changes. Another potential advantage is that in one or more embodiment configurations, the enclosed void can be positioned adjacent to or in contact with an interior portion of a surface, such as an interior surface of a support panel, a sandwich panel, or a portion of an enclosed surface. Such a sealed aperture can not only act as a temperature buffer as previously described, but can also provide additional mechanical coupling or connectivity at the coupling or connection point between the surface and the interconnected physical support by increasing the amount of material coupling or contacting the surface at the interface point.

[0056] A component configured for use with an epitaxial growth processing chamber comprised at least in part of a megacell support structure may have one or more physical configurations. Figure 2A and Figure 2B A cross-sectional representation of a freestanding megacell support structure is shown. In one or more embodiments, the component is configured such that the component consists solely of the megacell support structure, i.e., it is a freestanding megacell support structure. In this case, the component comprises only the megacell support structure. The component consists of, or consists essentially of, the megacell support structure, which is bounded by interconnected solid supports. Rectangles 200 and 210 each represent a portion of the component without any external cladding, mounting, shielding, surface, or protection. All exterior surfaces of the component are exposed; both the holes and the interconnected solid supports are fluidically accessible through the exterior surfaces of the component. Unless the surfaces are sealed with a membrane or layer, fluid can traverse the megacell support structure virtually unimpeded in any axial direction (except for the interconnected solid supports and potentially closed holes).

[0057] Figure 2C A cross-sectional representation of a polymer-filled, freestanding megacell support structure is shown. In one or more embodiments, a component is configured such that the component has a megacell support structure having holes filled with a second solid material. In such a configuration, the second solid material (such as second solid material 223 within hole 224 of rectangle 220) is different from the material of the interconnected solid supports 222 of the megacell support structure. Figure 2C In the figure, the rectangle 220 is structurally similar to Figure 2A and Figure 2B However, the internal pore structure 224 is completely filled with the second solid material. In one or more embodiments, the second solid material can be a polymer, such as a thermosetting polymer, PEEK, polyimide, or a combination thereof.

[0058] The second solid material of the "solid polymer filled" configuration should not expand or contract with changes in temperature at a rate significantly different from that of the interconnected solid supports, to prevent physical stresses on the megacell support structure and degradation of the overall composite structure. Likewise, the second solid material should not melt, liquefy, degrade, or decompose under normal or even foreseeable extreme operating conditions of the component or epitaxial growth processing chamber. The second solid material may soften at elevated temperatures, such as thermosetting polymers are known to soften, as they absorb energy and their bonds stretch within the polymer matrix; however, other than the most anticipated expansion and contraction due to temperature cycling and exposure to process vapors (if so exposed), the second solid material should not otherwise lose physical integrity of shape or expand.

[0059] Figure 2DA cross-sectional representation of a plate-supported megacell support structure is shown. In one or more embodiments, the component is in a plate-supported configuration. Rectangle 230 represents a portion of a "plate-supported" component. In one or more embodiments, a support plate 235 is coupled to an interconnecting physical support 232; in one or more embodiments, the support plate is connected to the interconnecting physical support 232. The coupling can be through an intermediate coupling layer (not shown), such as an adhesive layer, that bonds the interior surface of the support plate 235 to external contact points along the exterior surface of the megacell support structure. The connection can be made directly by known connection techniques, such as, but not limited to, welding, brazing, diffusion bonding, and mechanical fastening, such as by bolting or clamping.

[0060] In one or more embodiments, portions of the board support configuration comprise different materials. For example, the interconnected physical supports of the megacell support structure may be made of a ceramic material or a first metal, and the support plate may be made of a second metal. In one or more embodiments of the board support component comprising different materials, the coefficients of expansion of the different portions of the board support component are within ±10% of each other. Such composite materials may have the advantages of providing reflectivity from the support surface, insulating properties from the megacell support structure, and cost-effectiveness in replacing more expensive materials and bonding techniques; however, it is noted that the materials of the different portions should have similar coefficients of expansion / contraction over the operating temperature range of the component to avoid damage to the coupling or connection means of the portions of the board support component. In one or more embodiments, portions of the board support configuration component comprise the same material.

[0061] In instances where portions of the plate support configuration components may be comprised of the same material, in one or more embodiments, the plate support components are unitary components. That is, there are no seams, separations, gaps, or breaks between the interconnected physical supports along the exterior surface of the megacell support structure coupled to the support plate and the support plate to which they are coupled or connected; the component is a single, unified object. Such components can be manufactured using known manufacturing processes, such as, but not limited to, additive manufacturing, such as three-dimensional (3D) printing; subtractive manufacturing; compression molding; injection molding; and casting.

[0062] In one or more embodiments, the outward-facing surface of the support plate may be a modified surface. In some cases, the outward-facing surface may be modified, such as mechanically or chemically, to directly alter its properties, such as by scoring, matting, etching, polishing, oxidation, and acid or base treatment. In such direct treatments, the properties of the material comprising the support plate itself may be enhanced to perform certain functions, such as bonding with another material or reflecting electromagnetic (EM) radiation. In some other cases, the outward-facing surface may be modified by coupling or connecting an external layer to the outward-facing surface. For example, a reflective film or mirror may be adhered to or coated on the outward-facing surface to reflect EM radiation. Other such modifications to the outward-facing surface of the support plate are understood and contemplated.

[0063] Figure 2E A cross-sectional representation of a sandwich megacell support structure is shown. In one or more embodiments, the component is in a sandwich configuration. Rectangle 240 represents a portion of the component in a sandwich configuration having a first plate 246 and a second plate 247 positioned on different surfaces of an interconnected solid support 242. Figure 2E As shown, plates 246, 247 may be positioned opposite one another, but it is contemplated that for alternative configurations, such as having triangular exterior surfaces, the two surfaces (such as plates 246, 247) may not be directly opposite one another (e.g., adjacent). This configuration is similar to a plate support configuration, except that there are two or more plates on opposing or different surfaces rather than a single support plate. In one or more embodiments, the first plate and the second plate are coupled or connected to interconnected physical supports of the megacell support structure.

[0064] In one or more embodiments, portions of the sandwich component comprise different materials, for example, first plate 246 comprises a first material and second plate 247 comprises a second material. In one or more embodiments in which portions of the sandwich component comprise different materials (e.g., the first and second materials are different), the coefficients of expansion of the different portions of the sandwich component are within ±10% of each other. In one or more embodiments, portions of the sandwich component comprise the same material, for example, the first and second materials are the same. In instances in which portions of the sandwich component comprise the same material (e.g., the first plate, second plate, and interconnecting solid supports comprise the same material), in one or more embodiments, the sandwich component is a unitary component. In one or more embodiments, one or both of the exterior-facing surfaces of one or both of the first or second plates may be modified surfaces. Examples previously given include polishing, etching, and applying a reflective layer to the exterior-facing surfaces. In such a sandwich component, the first plate may have an exterior-facing surface that is scored to promote adhesion, and the second plate may have an exterior-facing surface that is finely polished to reflect EM radiation.

[0065] Figure 2FA cross-sectional representation of a surface-sealed megacell support structure is shown. In one or more embodiments, the component is in a surface-sealed configuration. Rectangle 250 represents a portion of a component in a surface-sealed configuration. An encapsulating surface 258 surrounds all exterior sides of the interconnected physical supports of the megacell support structure. The encapsulating surface 258 may comprise a material different from the material of the interconnected physical supports. Alternatively, the encapsulating surface 258 may comprise the same material as the material of the interconnected physical supports. This surface seal does not allow fluids (such as gases, liquids, or supercritical fluids) to traverse into or out of the megacell support structure; instead, the structure and any fluids contained within the pores are fluid-sealed within the structure. Based on permeability, fluids can move within the structure of the entire component, thereby redistributing heat by mass convection. In one or more embodiments, the surface seal is coupled or connected to the interconnected physical supports of the megacell support structure.

[0066] In one or more embodiments, portions of the surface sealing component comprise different materials. In one or more embodiments in which portions of the surface sealing component comprise different materials, the coefficients of expansion of the different portions of the surface sealing component are within ±10% of each other. In one or more embodiments, portions of the surface sealing component comprise the same material. In instances in which portions of the surface sealing component comprise the same material, in one or more embodiments, the surface sealing arrangement is a unitary component. In one or more embodiments, one, some, or all of the exterior-facing surfaces of the sealing surface may be modified surfaces.

[0067] When a surface seal component is present, the pores of the megacell support structure are filled with a gas, such as nitrogen, argon, helium, other noble gases, and other gases that are generally non-reactive with the component, and combinations thereof. The gas within the surface seal configuration is at or below atmospheric pressure at room temperature. This allows the pressure of the gas trapped within the surface seal component to rise when exposed to process heat. In one or more embodiments, the pressure within the surface seal component at room temperature is from about 1x10 -5 atmosphere to about 1.0 atmosphere, such as 0.00001, 0.0001, 0.001, 0.01, and 0.1 atmosphere to about 0.2, 0.3, 0.5, 0.7, 0.8, 0.9, and 1.0 atmosphere, including all combinations of ranges and endpoints.

[0068] Figure 3A and Figure 3B A top view and a side view are provided, respectively, of components comprising a megacell support structure configured for use with an epitaxial growth processing chamber. Figure 3A and Figure 3B , in one or more embodiments, a component having a megacell support structure configured for use with an epitaxial growth processing chamber includes an upper liner 313. The upper liner 313 is similar to the upper liner 313 for Figure 1 The upper liner 113 of the process chamber 100 described in the embodiment of the present invention is provided. Figure 3A and Figure 3B An embodiment upper liner 313 is illustrated in FIG, but those skilled in the art understand that embodiment upper liners also include those having different overall physical dimensions, such as but not limited to thickness, width, circumference, and diameter suitable for proper operation in what is understood to be an epitaxial growth processing chamber.

[0069] Along Figure 3A There may be one or more useful megacell support structure configurations for use with epitaxial growth processing chambers, as viewed along view line AA. In one or more embodiments, the upper liner is configured such that the upper liner consists of a freestanding megacell support structure; in one or more embodiments, the upper liner is configured such that the upper liner consists essentially of or consists of a freestanding megacell support structure. Figure 3C A freestanding megacell support structure configuration for the upper pad is provided. The upper pad may be in a freestanding megacell support structure configuration, such as in Figure 3C is shown as rectangle 300, which is similar to Figure 2A The rectangular 200 is shown, but other megacell support structures may be used. In one or more embodiments, the interconnected physical support members of the megacell support structure of the upper pad are composed of ceramic or glass materials. Such materials are completely inert to the epitaxial process environment.

[0070] In one or more embodiments, the upper gasket is configured in a face sealing configuration. Figure 3D A megacell support structure configuration is provided for surface sealing of the upper liner. Rectangle 350 is similar to rectangle 250 except that Figure 3D In the illustrated example, a non-mesh interconnected physical support structure is shown within the upper liner surface seal megacell support structure. As previously described, the interconnected physical support structure for any embodiment component can be in a mesh or regular configuration. In one or more embodiments, the upper liner surface seal megacell support structure is composed of a ceramic or glass material. Gas is contained within the pores and voids of the upper liner surface seal megacell support structure.

[0071] The surface of the surface sealed megacell support structure has a determinable amount of material, which may vary depending on the implementation. For example, the thickness of the sealed surface (such as 358) of the sealing surface (such as Figure 3DThe Tss shown can be characterized as a relative percentage of the cross-sectional area of ​​the component. This may be useful when the thickness of the various surfaces of the component are not equal or equal on all sides but the surface protection of the entire component has an overall consistency. In one or more embodiments, the sealing surface has a cross-sectional area in the range of about 0.001% to about 25% of the cross-sectional area of ​​the upper liner, such as from about 0.001, 0.01, 0.1, 1, 2, 3, 5, 10, 15, 20, and 25%, including all range combinations and endpoints. Those skilled in the art will understand that this cross-sectional area value may change depending on the observation position and thus may vary from one value to another within a given range. In another case, such as when the sealing surface thickness is more uniform throughout the component, the absolute thickness value of the sealing surface thickness can be simply measured directly. In one or more embodiments, the surface seal thickness of the upper liner is in the range of from about 0.01 mm (millimeter) to about 3 mm, such as from about 0.01, 0.02, 0.03, 0.04, 0.05, 0.1, 0.2, 0.3, 0.5, 0.7, and 0.9 to about 1.0, 1.5, 2.0, 2.5, and 3.0 mm, including all range combinations and endpoints.

[0072] Figure 4A and Figure 4B Side and perspective views are provided, respectively, of components comprising a micro-unit support structure configured for use with an epitaxial growth processing chamber. Figure 4A and Figure 4B In one or more embodiments, a component comprising a micro-unit support structure for use with an epitaxial growth processing chamber may include a lower liner 411. The lower liner 111 is similar to the one for Figure 1 The lower liner 111 of the process chamber 100 described in the embodiment of the present invention is provided. Figure 4A and Figure 4B An embodiment lower liner 411 is illustrated, but those skilled in the art understand that embodiment lower liners also include those having similar or different overall physical dimensions, such as but not limited to thickness, width, circumference, and diameter suitable for proper operation in what is understood to be an epitaxial growth processing chamber.

[0073] As along Figure 4B There may be one or more useful megacell support structure configurations for use with epitaxial growth processing chambers, as viewed along view line BB. In one or more embodiments, the lower liner is configured such that the lower liner consists of a freestanding megacell support structure; in one or more embodiments, the lower liner is configured such that the lower liner consists essentially of or consists of a freestanding megacell support structure. Figure 4C A freestanding megacell support structure configuration for the lower pad is provided. The lower pad may be in a freestanding megacell support structure configuration, such as in Figure 4C is shown as a rectangle 400, which is similar to Figure 2A The rectangular shape 200 is shown, but other megacell support structures may be used. In one or more embodiments, the interconnected solid support members of the megacell support structure of the lower pad are composed of ceramic or glass materials.

[0074] In one or more embodiments, the lower gasket is configured in a face sealing configuration. Figure 4D A megacell support structure configuration is provided for surface sealing of the lower gasket. Rectangle 450 is similar to rectangle 250 except that Figure 4D In the example shown, non-mesh interconnected physical supports are shown within the megacell support structure of the surface seal of the lower liner. In one or more embodiments, the megacell support structure for the surface seal of the lower liner is composed of a ceramic or glass material. Gas is contained within the pores and voids of the megacell support structure for the surface seal of the lower liner. In one or more embodiments, the surface seal has a cross-sectional area in the range of from about 0.001% to about 25% of the cross-sectional area of ​​the lower liner, such as from about 0.001, 0.01, 0.1, 1, 2, 3, 5, 10, 15, 20, and 25%, including all range combinations and endpoints. Those skilled in the art will appreciate that this cross-sectional area value can change depending on the viewing position and can thus vary from one value to another within a given range. In one or more embodiments, the sealing surface thickness of the lower gasket is in the range of from about 0.01 mm (millimeter) to about 3 mm, such as from about 0.01, 0.02, 0.03, 0.04, 0.05, 0.1, 0.2, 0.3, 0.5, 0.7, and 0.9 to about 1.0, 1.5, 2.0, 2.5, and 3.0 mm, including all range combinations and endpoints.

[0075] In one or more embodiments, the megacell support structure for surface sealing of the lower gasket comprises a surface sealing structure comprising a ceramic or glass material. In one or more embodiments, the megacell support structure for surface sealing of the lower gasket comprises interconnected solid supports of the megacell support structure comprising a ceramic or glass material. In one or more embodiments, the ceramic or glass surface sealing structure and the interconnected solid supports comprise the same material.

[0076] 5A-1 provides a top-down view of a non-embodiment component for use with a processing chamber for general discussion purposes. Epitaxial pedestal 512A may have Figure 15A-2 provides, for general discussion purposes, an exposed view along view line CC of a non-embodiment component for use with the processing chamber provided in FIG. 5A-1. The exposed view of FIG. 5A-2 relates to the side of the base 512A defining the substrate slot 501 and distal to the one or more gas exhaust outlets 516. In FIG. 5A-1 and FIG. 5A-2, the base 512A is shown as having several features, including the substrate slot 501 defining the physical boundary of the base 512A itself, an exterior surface 503, and an interior surface 505. The interior surface 505 also defines a cylindrical volume 507 within the base 512A, which is the processing volume (previously described in Figure 1 5A-2 , the edge of the interior surface at the view line (arrow 509) and the interior surface of the internal structure 509 around the remaining semicircular surface can be viewed, which also includes a view through the substrate slot 501. At the point where the reveal view CC occurs, the internal structure 509 of the base 512A is revealed (in this case, a completely solid material), having a thickness "Tb" representing the thickness of the base at that view line. Although a non-embodiment pedestal 512A is illustrated in FIGs. 5A-1 and 5A-2 for discussion purposes, those skilled in the art will appreciate that non-embodiment and embodiment pedestals also include those having similar or different overall physical dimensions, such as, but not limited to, an internal processing volume circumference and diameter suitable for proper operation in what is understood to be an epitaxial growth processing chamber; pedestal thickness, width, and length; substrate slot dimensions and configuration; and the number, location, and type of gas exhaust outlets.

[0077] FIG5B-1 provides a top-down view of components comprising a megacell support structure for use with an epitaxial growth processing chamber. FIG5B-2 provides an uncovered view of components comprising a megacell support structure for use with an epitaxial growth processing chamber provided in FIG5B-1, taken along view line CC′. In one or more embodiments that may be combined with other embodiments, a freestanding megacell support structure is coupled or connected to an interior surface of a pedestal, such as in a ring or annular configuration of a freestanding megacell support 500, as can be viewed from top to bottom in FIG5A-1. A ring or annular configuration of a freestanding megacell support is shown integrated into an existing structure, such as epitaxial pedestal 512B, without removing or replacing any internal structure 509B. That is, the configurations of internal structure 509A of epitaxial pedestal 512A and internal structure 509B of epitaxial pedestal 512B are similar or identical. Pedestals 512A and 512B have the same pedestal thickness (Tb) at the same viewpoint (along view lines CC and CC′, respectively). The ring or annular configuration of the megacell support structure 500 is coupled or connected to the interior surface 505 of the base 512B using any known or understood coupling or connection technique, including friction, adhesive, a physical object (such as a bolt), a set screw, or a keyway on or through the interior surface 505. In one or more embodiments, the ring or annular configuration of the freestanding megacell support is configured to frictionally couple with the interior surface of the base. In some examples, the outer surface of the ring or annular configuration of the megacell support structure 500 has approximately the same diameter (D) as the interior surface 505 of the base 512A.

[0078] Although not shown in detail, the ring or annular configuration of the freestanding megacell support structure is configured for operations to occur within the base. For example, the ring or annular configuration will define an extension of the void, which the base 512B defines as a substrate slot 501, allowing substrates to enter and exit the processing chamber. As can be seen in FIG5A-2, the substrate slot 501 is visible through the ring or annular configuration of the freestanding megacell support 500. Similarly, the ring or annular configuration will also define an extension of one or more flow conduits, which the base 512B defines as one or more gas exhaust outlets 516, as can be seen in the top-down representation given in FIG5A-1.

[0079] The ring or annular configuration 500 has an annular thickness (Tr) in the range of from about 0.1% to about 25% of the diameter (D) of the interior surface of the pedestal, such as from about 0.1, 0.2, 0.3, 0.5, 1.0, 2.0, 3.0, 5.0, 7.0, and 9.0 to about 10.0, 11.0, 12.0, 13.0, 14.0, 15.0, 20.0, and 25.0% of the diameter (D) of the interior surface of the pedestal. Thus, the annular thickness (Tr) of the ring or annular configuration of the pedestal's freestanding megacell support relatively affects the "working" cylindrical volume 507'. When present, cylindrical volume 507' is smaller than cylindrical volume 507, although the void volume of the ring or annular configuration of the freestanding megacell support will also serve as part of the processing volume, so from a relative perspective, the gas volume is not reduced, while the physical volume that the substrate can occupy is reduced by a more significant amount. Conversely, the volume reduction of cylindrical volume 507' is D minus Tr, defined as "Dr" in Figure 5B-2. Dr is defined as the diameter formed by opposing points along the interior surface 511 of the ring or annular configuration of megacell support structure 500, as seen in Figure 5B-2.

[0080] In one or more embodiments, the freestanding megacell support structure of the epitaxial mount has interconnected solid support members composed of ceramic or glass materials.

[0081] FIG5C-1 provides a top-down view of a component comprising a megacell support structure for use with an epitaxial growth processing chamber according to one or more embodiments. FIG5C-2 provides an uncovered view along view line CC" of the component provided in FIG5C-1 comprising a surface-sealed megacell support structure for use with an epitaxial growth processing chamber. In other embodiments, the base is configured such that it is in a surface-sealed configuration. As indicated along view line CC" in FIG5C-2, the surface-sealed megacell support structure 550 shows a volume having an internal structure 509C having a thickness Tb, which is formed by a structure similar to that shown in FIG5C-2. Figure 2F The surface-sealed megacell support structure is shown as a megacell support structure in rectangle 250. Those skilled in the art will appreciate that other megacell support structures may be used for the base.

[0082] As seen in FIG5C-2, in this example, the entirety of the megacell support structure 500 is surface sealed by a sealing surface 558. The surface sealing structure has a thickness (Tss). In one or more embodiments, the surface sealing structure comprises a cross-sectional area in a range from about 0.001% to about 25% of the cross-sectional area of ​​the base, such as from about 0.001, 0.01, 0.1, 1, 2, 3, 5, 10, 15, 20, and 25%, including all range combinations and endpoints. One skilled in the art will appreciate that the cross-sectional area value can vary depending on the viewing position, and thus its value can vary from one value to another within the range based on the location of the measurement.

[0083] In one or more embodiments, a megacell support structure for surface sealing of an epitaxial pedestal has a surface sealing structure comprising a ceramic or glass material. In one or more embodiments, a megacell support structure for surface sealing of an epitaxial pedestal has interconnected solid supports of a megacell support structure comprising a ceramic or glass material.

[0084] 5D-1 provides a top-down view of components including a megacell support structure for use with an epitaxial growth processing chamber according to one or more embodiments. 5D-2 provides an uncovered view along view line CC″′ of the components provided in 5D-1 including a megacell support structure for use with an epitaxial growth processing chamber. In one or more embodiments, the base is configured such that it is in a sandwich configuration. As represented along view line CC″′ in FIG. 5D-2 , the sandwich megacell support structure 540 shows a volume having an inner structure 509D of thickness Tb, which is composed of a volume similar to that shown in FIG. Figure 2E The megacell support structure of the sandwich megacell support structure is shown in rectangle 240. When viewed from above, the megacell support structure 540 is visible, especially the area between the first plate 546 and the second plate 547 of the megacell support structure 500. Although not literally formed as a "plate" in this example, which may remind people of the image of a flat surface, those skilled in the art will understand that the dictionary is consistent with the previously described example of the megacell support structure configuration and is consistent with the above example. Figure 2E 240 in FIG. 2 and is still applicable here and in other embodiments.

[0085] As seen in FIG5D-2, the entirety of megacell support structure 500 is contained between a first plate 546, which serves as the outward-facing plate of base 512D, and a second plate 547, which serves as the inward-facing plate of base 512D. The first plate has a thickness (Te); the second plate has a thickness (Ti). In one or more embodiments, the thickness (Te) of the first plate is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1.0 to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all combinations and endpoints of ranges. In one or more embodiments, the thickness of the second plate (Ti) is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1.0 to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all range combinations and endpoints. In one or more embodiments, the first and second plates have the same or similar thickness; in another embodiment, the first plate has a greater thickness than the second plate; in another embodiment, the first plate has a lesser thickness than the second plate. The difference in thickness between the two plates may exist for various reasons, including but not limited to the overall mechanical strength of the base and the safety and containment of process fluids during operation. Thus, the thickness of the megacell support structure will be determined as the base thickness (Tb) minus the sum of the two plate thicknesses (Ti + Te). Those skilled in the art understand that the first and second plate thicknesses may vary depending on the observation position, and thus their values ​​may vary from one value to another within the range based on the position of measurement.

[0086] In this sandwich configuration, the interconnected physical supports of the megacell support structure can be composed of metal. In one or more embodiments, the first plate and the second plate are made of metal. In one or more embodiments, which may be combined with other embodiments, the first plate and the second plate are both made of the same material as the interconnected physical supports. However, it is also contemplated that either or both of the first plate and the second plate can be made of a different metal material than the interconnected physical supports.

[0087] 6A-1 provides a top-down view of a non-embodiment component used with a processing chamber for general discussion purposes. The epitaxial exhaust cover 678A may have Figure 16A-2 provides an exposed view of a non-embodiment component for use with the processing chamber provided in FIG. 6A-1 , taken along view line EE, for general discussion purposes. The exposed view of FIG. 6A-2 relates to a vertical side view of the exhaust cover 678A when in place as part of the processing chamber. In the exposed view, an inlet port 601 is defined by a coupling flange 613 and, when coupled or connected, is generally in fluid communication with a processing chamber (such as processing chamber 100). The inlet port 601 provides fluid access to an interior 607, which is primarily defined by an interior surface 605. In FIG. 6A-1 and FIG. 6A-2 , the exterior surface 603 is visible as the top of the exhaust cover 678A. 609A is the internal structure of the exhaust cover 678A. An outlet port 615 provides fluid access to the interior 607 and allows gases traveling through 678A to exit the exhaust cover 678A. Several dimensions are useful for describing aspects of the exhaust cover of a potential embodiment. "Hi" is defined as the height between opposite points along the lower and upper interior surfaces 605 of the exhaust cover 678A. "Li" is defined as the length or depth between the inlet port 601 and the opposite side of the exhaust cover 678A, such as along view line EE. "Tc" is the thickness of a surface of the exhaust cover 678A, such as the thickness of the internal structure 609A. Although non-embodiment exhaust covers 678A are illustrated in Figures 6A-1 and 6A-2, those skilled in the art will appreciate that embodiment exhaust covers also include those having different overall physical dimensions, such as, but not limited to, thickness, width, height, volume, outlet port location and diameter, coupling or connection means to a base, suitable for proper operation in what is understood to be an epitaxial growth processing chamber.

[0088] For several embodiments of the exhaust cover, FIG6A-1 shows an exterior top-down view of a megacell support structure for all embodiments to be described. FIG6B-2 provides a second, uncovered view along view line EE of the components provided in FIG6A-1, including the megacell support structure for use with an epitaxial growth processing chamber. For FIG6B-2, FIG6C-2, and FIG6D-2, hatching is used to indicate the presence and location of the megacell support structure for clarity. In one or more embodiments that may be combined with other embodiments, a freestanding megacell support structure is coupled or connected to an interior surface of the exhaust cover, such as a sheet of freestanding megacell support 600. A freestanding megacell support is shown integrated into an existing structure, such as an epitaxial exhaust cover 678B, without removing or replacing any internal structure 609B, i.e., the configuration of the internal structure 609A of the epitaxial exhaust cover 678A and the internal structure 609B of the epitaxial exhaust cover 678B are similar or identical. Drain covers 678A and 678B have the same drain cover thickness (Tc) at the same observation point (along observation line EE). The self-contained megacell support structure 600 is coupled or connected to the interior surface 605 of drain cover 678B using any known or understood coupling or connection technique, as previously described. In one or more embodiments, the self-contained megacell support structure is configured to frictionally couple with the interior surface of the drain cover. In some examples, the exterior surface of the self-contained megacell support structure 600 has approximately the same shape and dimensions as the interior surface 605 of drain cover 678B, including interior height (Hi) and interior length (Li).

[0089] Although not shown in detail, the self-contained megacell support structure is configured to allow operations to occur within the exhaust cover. For example, the self-contained megacell support structure defines an extension of the void, which the exhaust cover 678B defines as a drain port 615, allowing gas to escape from the exhaust cover. Other configurations may be provided as needed to support operations.

[0090] The freestanding megacell support structure 600 has a thickness (Tr) in the range of from about 0.1% to about 25% of the height (Hs) of the interior surface of the drain cover, such as from about 0.1, 0.2, 0.3, 0.5, 1.0, 2.0, 3.0, 5.0, 7.0, and 9.0 to about 10.0, 11.0, 12.0, 13.0, 14.0, 15.0, 20.0, and 25.0% of the height of the interior surface of the drain cover. The thickness (Tr) of the freestanding megacell support structure has an effect on the "working" interior 607' in a manner similar to that previously described with respect to the cylindrical volume 507' of Figures 5B-1 and 5B-2: the gas volume will be reduced by the amount of volume occupied by the interconnected physical supports, but the physical volume is more limited to the height Hs, which is the original height Hi of the drain cover 678A in addition to the two thicknesses Tr. The same characterization can be applied to the reduction in physical length between the original length Li and the modified length Ls of the interior 607', the difference being Tr. Assuming that only steam passes through the discharge cap 678B, the loss in useful volume is minimal.

[0091] In one or more embodiments, the freestanding megacell support structure of the drain cover has interconnected solid support members composed of ceramic or glass materials.

[0092] FIG6C-2 provides a third uncovered view along view line EE of the components of the surface-sealed megacell support structure provided in FIG6A-1 for use with an epitaxial growth processing chamber. In other embodiments, the exhaust cover 678C is configured so as to be in a surface-sealed configuration. As shown along view line EE in FIG6C-2, the surface-sealed megacell support structure 650 shows a volume having an internal structure 609C having a thickness Tc, which is formed by a structure similar to that shown in FIG6A-1. Figure 2F The surface-sealed megacell support structure is shown as a megacell support structure in rectangle 250. Those skilled in the art will appreciate that other megacell support structures may be used for the drain cover.

[0093] As seen in FIG6C-2, in this example, the entirety of the megacell support structure 600 is surface sealed by a sealing surface 658. The surface sealing structure has a thickness (Tss). In one or more embodiments, the surface sealing structure comprises a cross-sectional area in a range from about 0.01% to about 25% of the cross-sectional area of ​​the discharge cover, such as from about 0.001, 0.1, 1, 2, 3, 5, 10, 15, 20, and 25%, including all range combinations and endpoints. One skilled in the art will appreciate that the cross-sectional area value can vary depending on the viewing position, and thus its value can vary from one value to another within the range based on the location of the measurement.

[0094] In one or more embodiments, a megacell support structure for surface sealing of an epitaxial discharge cap has a surface sealing structure comprising a ceramic or glass material. In one or more embodiments, a megacell support structure for surface sealing of an epitaxial discharge cap has interconnected solid supports of a megacell support structure comprising a ceramic or glass material.

[0095] FIG6D-2 provides an uncovered view along view line EE of the components provided in FIG6A-1 including a megacell support structure for use with an epitaxial growth processing chamber. In one or more embodiments, the exhaust cover is configured so as to be in a sandwich configuration. In other embodiments, the exhaust cover is configured so as to be in a sandwich configuration. As shown along view line EE in FIG6D-2, the sandwich megacell support structure 640 shows a volume having an internal structure 609D with a thickness Tc, which is formed by a structure similar to the following. Figure 2E The rectangle 240 shows the megacell support structure of the sandwich megacell support structure. The area of ​​the megacell support structure 600 is between the first plate 646 and the second plate 647.

[0096] As seen in FIG6D-2, the entirety of the megacell support structure 600 is contained between a first plate 646, which serves as the outward-facing plate of the drain cover 678D, and a second plate 547, which serves as the inward-facing plate of the drain cover 678D. The first plate has a thickness (Te); the second plate has a thickness (Ti). In one or more embodiments, the thickness (Te) of the first plate is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1. to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all combinations and endpoints of ranges. In one or more embodiments, the thickness of the second plate (Ti) is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1.0 to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all combinations and endpoints of ranges. In one or more embodiments, the first and second plates have the same or similar thickness; in another embodiment, the first plate has a greater thickness than the second plate; in another embodiment, the first plate has a lesser thickness than the second plate. For various reasons as previously described, there may be a difference in thickness between the two plates. Thus, the thickness of the megacell support structure will be determined as the discharge cover thickness (Tc) minus the sum of the two plate thicknesses (Ti + Te). Those skilled in the art will appreciate that the first and second plate thicknesses may vary depending on the viewing position, and thus their values ​​may vary from one value to another within the range based on the location of measurement.

[0097] In this sandwich configuration, the interconnected physical supports of the megacell support structure can be composed of metal. In one or more embodiments, the first plate and the second plate are made of metal. In one or more embodiments, which may be combined with other embodiments, the first plate and the second plate are both made of the same material as the interconnected physical supports. However, it is also contemplated that either or both of the first plate and the second plate can be made of a different metal material than the interconnected physical supports.

[0098] Figure 7A A perspective view of several components comprising a micro-cell support structure configured for use with an epitaxial growth processing chamber is provided. Figure 7A As provided in

[0045] , in one or more embodiments, a component comprising a microcell support structure for use with an epitaxial growth processing chamber may include an implant ring, such as implant ring 780. Figure 7A Also provided and shown as coupled to implant ring 780, in one or more embodiments, components comprising a microcell support structure for use with an epitaxial growth processing chamber may include an implant cap, such as implant cap 790. Although in Figure 7A An embodiment injection ring 780 and an embodiment injection cap 790 are illustrated in the figures, and those skilled in the art will understand that embodiments of the injection cap or injection ring may have similar or different overall physical dimensions, such as, but not limited to, thickness, width, circumference, number of injection orifices, manner and means of coupling the injection cap and injection ring to each other or whether they are a single piece, and diameter suitable for proper operation in what is understood to be an epitaxial growth processing chamber.

[0099] As along Figure 7A As viewed from the observation plane FF, there may be one or more mega-unit support structures that can be used to configure an implant ring in an epitaxial growth processing chamber. Figure 7B Provided Figure 7A FF. In one or more embodiments that may be combined with other embodiments, the freestanding megacell support structure is coupled or connected to the interior surface of the implant ring 780, such as in a ring or annular configuration of the freestanding megacell support 700. Figure 7BAs can be seen, the internal structure 709B of the injection ring 780 is unchanged; the ring or annular configuration of the megacell support structure 700 is similar in configuration to the ring or annular configuration of the megacell support structure 500 provided for the base 512B, except for accommodating certain configuration differences, such as differences in the ports or holes for supporting gas introduction. The ring or annular configuration of a standalone megacell support is shown integrated into an existing structure, such as a structure extending the injection ring 780, without removing or replacing any internal structure 709B. The ring or annular configuration of the megacell support structure 500 is coupled or connected to the internal surface 785 of the injection ring 780 using any known or understood coupling or connection technique, including friction, adhesive, physical (such as bolts), set screws, or keyways on or through the internal surface 785. In one or more embodiments, the ring or annular configuration of the standalone megacell support is configured to frictionally couple with the internal surface of the injection ring. In some examples, the outer surface of the ring or annular configuration of the megacell support structure 700 has approximately the same diameter as the inner surface 785 of the injection ring 780.

[0100] Although not shown in detail, the ring or annular configuration of the freestanding megacell support structure is configured for operations to occur within the injection ring. For example, the ring or annular configuration defines an extension of one or more flow ducts that the injection cap defines to allow gas to flow into the operating area.

[0101] The ring or annular configuration has an annular thickness in the range from about 0.1% to about 25% of the diameter of the interior surface of the injection ring, such as from about 0.1, 0.2, 0.3, 0.5, 1.0, 2.0, 3.0, 5.0, 7.0, and 9.0 to about 10.0, 11.0, 12.0, 13.0, 14.0, 15.0, 20.0, and 25.0% of the diameter of the interior surface of the injection ring.

[0102] In one or more embodiments, a freestanding megacell support structure for an epitaxial implant ring has interconnected solid supports composed of ceramic or glass materials.

[0103] Figure 7C Provided Figure 7A A disclosed view along view line EE of a component of a megacell support structure including a surface seal for use with an epitaxial growth processing chamber is provided in FIG. In other embodiments, the implant ring is configured so as to be in a surface seal configuration. Figure 7C As shown along view line EE in FIG. 7 , the surface sealed megacell support structure 750 shows a volume having an inner structure 709C having a thickness, which is formed by a structure similar to that shown in FIG. Figure 2F The surface-sealed megacell support structure is shown as a megacell support structure in rectangle 250. Those skilled in the art will appreciate that other megacell support structures may be used for the injection ring.

[0104] like Figure 7C As can be seen, in this example, the entirety of the megacell support structure 700 is surface-sealed by the sealing surface 758. The surface sealing structure has a thickness. In one or more embodiments, the surface sealing structure comprises a cross-sectional area in the range of from about 0.001% to about 25% of the cross-sectional area of ​​the injection ring, such as from about 0.01, 0.1, 1, 2, 3, 5, 10, 15, 20, and 25%, including all combinations and endpoints of ranges. Those skilled in the art will appreciate that the cross-sectional area value can vary depending on the location of observation, and thus its value can vary from one value to another within the range based on the location of measurement.

[0105] In one or more embodiments, a megacell support structure for surface sealing of an epitaxial implant ring has a surface sealing structure comprising a ceramic or glass material. In one or more embodiments, a megacell support structure for surface sealing of an epitaxial implant ring has interconnected solid supports of a megacell support structure comprising a ceramic or glass material.

[0106] Figure 7D Provided Figure 7A A disclosed view along view line EE of a component including a megacell support structure for use with an epitaxial growth processing chamber is provided in FIG. In one or more embodiments, the implant ring is configured such that it is in a sandwich configuration. Figure 7D As shown along view line EE in FIG. 7 , the sandwich megacell support structure 740 shows a volume having an inner structure 709D with a thickness, which is formed by a structure similar to that shown in FIG. Figure 2E Rectangle 240 shows the megacell support structure components of the sandwich megacell support structure. The sandwich megacell support structure 740 is visible, particularly the area of ​​the megacell support structure 700 between the first plate 746 and the second plate 747.

[0107] like Figure 7DAs can be seen, the entirety of the megacell support structure 700 is contained between a first plate 746, which serves as the exterior-facing side, and a second plate 747, which serves as the interior-facing side. The first plate has a thickness, and the second plate has a thickness. In one or more embodiments, the thickness of the first plate is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1.5 to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all combinations and endpoints of ranges. In one or more embodiments, the thickness of the second plate is in the range of from about 0.05 to about 5 mm, such as from 0.05, 0.07, 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, and 1. to about 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, and 5.0 millimeters (mm), including all combinations and endpoints of ranges. In one or more embodiments, the first and second plates have the same or similar thickness; in another embodiment, the first plate has a thickness greater than the second plate; in another embodiment, the first plate has a thickness less than the second plate. The difference in thickness between the two plates may exist for various reasons, including but not limited to the overall mechanical strength of the base and the safety and containment of process fluids during operation. Thus, the thickness of the megacell support structure will be determined as the injection ring thickness minus the sum of the thicknesses of the two plates. Those skilled in the art will appreciate that the thickness of the first and second plates may vary depending on the observation location, and thus their values ​​may vary from one value to another within the range based on the location of the measurement.

[0108] In this sandwich configuration, the interconnected physical supports of the megacell support structure can be composed of metal. In one or more embodiments, the first plate and the second plate are made of metal. In one or more embodiments, which may be combined with other embodiments, the first plate and the second plate are both made of the same material as the interconnected physical supports. However, it is also contemplated that either or both of the first plate and the second plate can be made of a different metal material than the interconnected physical supports.

[0109] Filling cap (such as Figure 7A The implant cap 790 has similar features and aspects to the previously described implant rings (such as the implant ring 780), including the embodiment megacell support structure configuration, composition, and arrangement. This is to minimize the amount of difference in operation when the implant ring and the implant cap are coupled together.

[0110] Although this specification contains many specific implementation details, these should not be construed as limiting the scope of what may be claimed, but rather as descriptions of features that may be specific to a particular implementation. Certain features described in this specification in the context of separate implementations may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented separately in multiple implementations or in any suitable subcombination. Furthermore, although previously described features may be described as functioning in certain combinations and even initially claimed as such, in some cases, one or more features from a claimed combination may be deleted from that combination, and claimed combinations may be directed to subcombinations or variations of subcombinations.

[0111] Specific embodiments of the subject matter have been described. Other embodiments, modifications, and permutations of the described embodiments are within the scope of the appended claims, as will be apparent to those skilled in the art. Although operations may be depicted in a particular order in the drawings or claims, this should not be construed as requiring that such operations be performed in the particular order shown or in a sequential order, or that all illustrated operations (some operations may be considered optional) be performed in order to achieve the desired results. In certain circumstances, multitasking or parallel processing (or a combination of multitasking and parallel processing) may be advantageous and may be performed as deemed appropriate.

[0112] In addition, the separation or integration of the various system modules and components in the previously described embodiments should not be understood as requiring such separation or integration in all embodiments. It should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

[0113] Thus, the exemplary embodiments described above do not define or limit the present disclosure. Other changes, substitutions, and alterations are also possible without departing from the spirit and scope of the present disclosure.

[0114] Furthermore, any claimed embodiment is considered applicable to at least one computer-implemented method; a non-transitory computer-readable medium storing computer-readable instructions to perform a computer-implemented method; and a computer system comprising a computer memory interoperable with a hardware processor configured to perform the computer-implemented method or instructions stored on the non-transitory computer-readable medium.

[0115] Although the various steps in the embodiment methods or processes are presented and described sequentially, those skilled in the art will appreciate that some or all of the steps may be performed in a different order, may be combined or omitted, and that some or all of the steps may be performed in parallel. Steps may be performed actively or passively. The methods or processes may be repeated or expanded to support multiple components or multiple users within a field environment. Thus, the scope should not be considered limited to the specific arrangement of steps shown in the flowchart or diagram.

[0116] Unless defined otherwise, all technical and scientific terms used have the same meaning as commonly understood by one of ordinary skill in the art to which these systems, apparatuses, methods, processes, and compositions belong.

[0117] The singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Within the claims, reference to an element in the singular is not intended to mean "one and only one" unless specifically stated otherwise, but rather "one or more." The term "some" refers to one or more unless specifically stated otherwise.

[0118] Embodiments of the present disclosure may suitably "comprise," "consist of," or "consist essentially of" the disclosed limiting features, and may be practiced without undisclosed limiting features. As used herein and in the appended claims, the words "comprising," "having," and "including," and all grammatical variations thereof, are intended to have an open, non-limiting meaning that does not exclude additional elements or steps.

[0119] "Optional" and "optionally" mean that the subsequently described material, event, or circumstance may or may not exist or occur. The description includes instances where the material, event, or circumstance occurs and instances where it does not.

[0120] As used herein, the term "determining" encompasses a wide variety of actions. For example, "determining" may include calculating, computing, processing, deriving, investigating, searching (e.g., looking up a table, a database, or another data structure), and ascertaining. Furthermore, "determining" may include receiving (e.g., receiving information) and accessing (e.g., accessing data in a memory). Furthermore, "determining" may include solving, selecting, choosing, and establishing.

[0121] When the word "about" or "approximately" is used, the term may mean that the value may vary by up to ±10%, up to 5%, up to 2%, up to 1%, up to 0.5%, up to 0.1%, or up to 0.01%.

[0122] Ranges can be expressed as from about one particular value to about another particular value, inclusive. When such a range is expressed, it will be understood that another embodiment is from the one particular value to the other particular value, along with all particular values ​​within the range and combinations thereof.

[0123] As used, terms such as "first" and "second" are arbitrary designations and are intended solely to distinguish between two or more components of a system, device, or composition. It will be understood that the terms "first" and "second" have no other purpose and are not part of the names or descriptions of the components, nor do they necessarily define the relative positioning or positions of the components. Furthermore, it will be understood that the mere use of the terms "first" and "second" does not require the presence of any "third" component, although that possibility is contemplated within the scope of the various embodiments described.

[0124] Although only a few example embodiments have been described in detail, those skilled in the art will readily appreciate that many modifications of the example embodiments are possible without materially departing from the scope of the disclosure as described. Accordingly, all such modifications are intended to be included within the scope of the present disclosure, as defined in the following claims. In the claims, means-plus-function clauses are intended to cover structures that are described as performing the stated function, and not only structural equivalents, but also equivalent structures. For example, although a nail and a screw may not be structural equivalents because a nail utilizes a cylindrical surface to secure wooden parts together, while a screw utilizes a helical surface, in the context of fastening wooden parts, a nail and a screw may be equivalent structures. Applicant expressly disclaims invoking patent law with respect to any limitation of any claim except those where the claim expressly uses the phrase "means for..." in conjunction with an associated function.

[0125] The following claims are not intended to be limited to the embodiments presented, but are to be accorded the full scope consistent with the language of the claims.

Claims

1. An epitaxial growth processing chamber, comprising: A component having a megacell support structure having interconnected solid supports defining pores in fluid communication with each other.

2. The epitaxial growth processing chamber of claim 1, wherein the component is a lower liner, an upper liner, a pedestal, an exhaust cap, an implant ring, an implant cap, or a combination thereof.

3. The epitaxial growth processing chamber of claim 1, wherein the interconnected solid supports comprise metal, ceramic or glass material, polymeric material, or a combination thereof.

4. The epitaxial growth processing chamber of claim 1, wherein the megacell support structure has a porosity of about 60% to about 99% of the volume of the megacell support structure.

5. The epitaxial growth processing chamber of claim 1, wherein the pores of the megacell support structure have an average pore size of about 1 to about 5000 microns.

6. The epitaxial growth processing chamber of claim 1, wherein the megacell support structure has a permeability of the pores of the megacell support structure of about 20% to about 100%.

7. The epitaxial growth processing chamber of claim 1, wherein the megacell support structure is in a freestanding configuration, a plate-supported configuration, a sandwich configuration, a surface-sealed configuration, or a solid polymer-filled configuration.

8. The epitaxial growth processing chamber of claim 7, wherein the component is a unitary component.

9. The epitaxial growth processing chamber of claim 7 , wherein the megacell support structure in the sandwich configuration comprises a first plate and a second plate, the first plate comprising a first material and the second plate comprising a second material, wherein each of the first material and the second material is a material similar to a material of the interconnected physical support.

10. The epitaxial growth processing chamber of claim 9, wherein the first material and the second material are different.

11. The epitaxial growth processing chamber of claim 7, wherein the megacell support structure in the surface seal configuration comprises an encapsulating surface comprising a different material than the interconnected physical support.

12. The epitaxial growth processing chamber of claim 11, wherein the megacell support structure in the surface sealing configuration further comprises a fluid within the megacell support structure.

13. A component configured for use in an epitaxial growth processing chamber, the component comprising: A megacell support structure having interconnected solid supports defining fluid communicating apertures.

14. The component of claim 13, wherein the component is a lower gasket, an upper gasket, a base, a drain cap, an injection ring, an injection cap, or a combination thereof.

15. The component of claim 13, wherein the interconnected solid supports comprise metal, ceramic or glass materials, polymeric materials, or combinations thereof.

16. The component of claim 13, wherein the megacell support structure has a porosity of about 60% to about 99% of the volume of the megacell support structure.

17. The component of claim 13, wherein the pores of the megastructure support structure have an average pore size of about 1 to about 5000 microns.

18. The component of claim 13, wherein the megacell support structure has a permeability of the pores of the megacell support structure of about 20% to about 100%.

19. A component configured for use in an epitaxial growth processing chamber, the component comprising: A megacell support structure having interconnected solid supports defining fluidly communicating apertures, wherein the megacell support structure is in a freestanding configuration, a plate-supported configuration, a sandwich configuration, a surface-sealed configuration, or a solid polymer-filled configuration.

20. The component of claim 19, wherein the component is a unitary component.

Images