Semiconductor wafer photoetching developing device and operation method thereof

Abstract

The invention belongs to the field of wafer developing, and particularly relates to a semiconductor wafer photoetching developing device and an operation method thereof.The semiconductor wafer photoetching developing device comprises a developing machine, the bottom of the inner wall of the developing machine is fixedly connected with a motor, the output end of the motor is fixedly connected with a machining table, the top of the machining table is provided with a suction cup, and the top of the inner wall of the developing machine is fixedly connected with a hydraulic cylinder; according to the semiconductor wafer photoetching developing device and the operation method thereof provided by the invention, the developing solution coated on the wafer is prevented from flowing towards the side surface of the wafer through the baffle ring, the coated developing solution is prevented from quickly volatilizing, and the baffle ring is prevented from rigidly colliding with the wafer in the downward moving process through the first spring, so that the service life of the developing solution is prolonged. By rotating the wafer in the coating process, coating of the wafer by the spray head is more uniform, and by arranging the rotating assembly, the storage box can be driven to rotate and the baffle ring can rotate while the processing table rotates, so that when the wafer rotates, the baffle ring rotates along with the rotation of the wafer, and abrasion of the baffle ring to the wafer is avoided.

Description

Technical Field

[0001] The present invention belongs to the field of wafer development, in particular to a semiconductor wafer photolithography development device and an operating method thereof. Background Art

[0002] At present, the market demand for the consistency of semiconductor devices is constantly improving. Although the previous batch immersion development method is highly efficient, the consistency of the developed lines is very poor, which ultimately leads to discrete parameters of the finished products. To solve this problem, the industry currently uses single-wafer development processing equipment for operations.

[0003] In the existing technology, single-wafer development usually adopts the method of dripping or spraying the developer onto the wafer to be developed. However, after the developer is applied to the wafer, due to the strong fluidity of the developer, the developer applied on the wafer tends to flow to the side of the wafer, resulting in blurred edges of the photolithography pattern and reduced resolution and accuracy of the photolithography. In addition, during the chip packaging process, the developer on the side of the wafer tends to affect the bonding strength between the packaging material and the wafer. In addition, it is not convenient to clean the wafer in time after the development is completed. After the development is completed, the developer and impurities such as the photoresist dissolved by the developer will remain on the surface of the wafer. These impurities will form residues on the wafer surface after drying, and the continued reaction of the residual developer will cause deformation or damage to the photoresist pattern.

[0004] To this end, the present invention provides a semiconductor wafer photolithography and development device and an operating method thereof. Summary of the Invention

[0005] In order to make up for the shortcomings of the existing technology and solve the problem that after the developer is coated on the wafer, the developer coated on the wafer is easy to flow to the side of the wafer due to its strong fluidity, resulting in blurred edges of the photolithography pattern and reduced resolution and accuracy of the photolithography. In addition, during the chip packaging process, the developer on the side of the wafer is easy to affect the bonding strength between the packaging material and the wafer. In addition, it is not convenient to clean the wafer in time after the development is completed. After the development is completed, the developer and impurities such as photoresist dissolved by the developer will remain on the surface of the wafer. These impurities will form residues on the surface of the wafer after drying, and the continuous reaction of the residual developer will cause the photoresist pattern to deform or damage. The present invention proposes a semiconductor wafer photolithography development device and an operating method thereof.

[0006] The technical solution adopted by the present invention to solve its technical problem is as follows: A semiconductor wafer lithography developing device according to the present invention includes a developing machine, wherein the bottom of the inner wall of the developing machine is fixedly connected to a motor, the output end of the motor is fixedly connected to a processing table, the top of the processing table is provided with a suction cup, the top of the inner wall of the developing machine is fixedly connected to a hydraulic cylinder, the output end of the hydraulic cylinder is fixedly connected to a cover plate, the bottom of the cover plate is rotatably connected to a material storage box, the top of the cover plate is provided with a filling port, the bottom of the cover plate is symmetrically fixedly connected to two brackets, a pipe is fixedly connected between the two brackets, the bottom of the pipe passes through the material storage box and is provided with a nozzle, the pipe is rotatably connected to the material storage box, the outer wall of the pipe is symmetrically provided with two liquid inlet grooves located inside the material storage box, the bottom of the material storage box is fixedly connected to a sleeve box, the inner wall of the sleeve box is slidably connected to a retaining ring, the top of the retaining ring is fixedly connected to a first spring, the top of the first spring is fixedly connected to the sleeve box, and the bottom of the material storage box is provided with a rotating assembly.

[0007] Preferably, the rotating assembly includes four rods, and the four rods are symmetrically fixedly installed at the bottom of the storage box. A liquid accumulation chamber is provided at the top of the processing table, and a plurality of slots are fixedly connected to the bottom of the inner wall of the liquid accumulation chamber at equal intervals. The slots are connected to each other, and the inner walls of the slots are set as an annular inclined surface. A limiting groove is provided inside the processing table and at the bottom of the slot, and the rods are fitted with the inner wall of the limiting groove. The bottoms of the four rods are fixedly connected with conical blocks.

[0008] Preferably, a cavity is provided inside the sleeve, and two sliding grooves are symmetrically provided inside the sleeve and below the cavity. A slider is slidably connected to the inner wall of the sliding groove, one end of the slider is fixedly connected to a second spring, one end of the second spring is fixedly connected to the sleeve, and a loading unit is provided inside the slider.

[0009] Preferably, the loading unit includes a feed cavity, which is opened inside the slider, a first feed port is opened at the top of the slider, a first discharge port is opened at the bottom of the slider, the first feed port and the first discharge port are both communicated with the feed cavity, a second feed port is opened inside the box and at the top of the slide, the second feed port is communicated with the feed cavity, a second discharge port is opened at the bottom of the box, the second discharge port is communicated with the slide, the other end of the slider is set to a symmetrical inclined surface, and the outer wall of the pipe is symmetrically fixed with two fixed plates.

[0010] Preferably, a first guide plate is fixedly connected to the bottom of the box, the first guide plate is arranged in a ring shape and the bottom is arranged in a ring-shaped arc surface, a second guide plate is fixedly connected to the bottom of the box and located on the inner side of the first guide plate, the second guide plate is arranged in a ring shape and the top is arranged in a ring-shaped arc surface, and a heating wire is arranged inside the second guide plate.

[0011] Preferably, a plurality of water inlets are equidistantly formed on the outer wall of the retaining ring.

[0012] Preferably, a fixing ring is fixedly connected between the four insertion rods, the inner wall of the fixing ring is set as an upward inclined surface, and an extension ring is fixedly connected to the bottom of the fixing ring, and the inner wall of the extension ring is set as a downward inclined surface.

[0013] Preferably, the inner wall of the developing machine is equidistantly and slidingly connected with four sliding shafts with the motor as the center, the tops of the four sliding shafts are fixedly connected with filter plates, the tops of the filter plates are set as an annular inclined surface, the outer walls of the four sliding shafts are sleeved with a third spring, the bottom of the third spring is fixedly connected to the developing machine, the top of the third spring is fixedly connected to the filter plate, the bottom of the processing table is symmetrically fixedly connected to two top plates, the top of the filter plate is symmetrically fixedly connected to two clamping blocks, the tops of the clamping blocks are set as symmetrical inclined surfaces, the clamping blocks are used in conjunction with the top plate, a liquid storage chamber is opened at the top of the developing machine and below the filter plate, a waste chamber is opened at the top of the developing machine and outside the filter plate, and the liquid storage chamber and the waste chamber are both set as annular.

[0014] Preferably, a plurality of stirring rods are fixedly connected to the bottom of the cover plate at equal intervals.

[0015] An operating method for a semiconductor wafer photolithography and development device is provided. The operating method is applicable to the above-mentioned semiconductor wafer photolithography and development device. The operating method steps are as follows: S1: Place the wafer on the processing table, fix the wafer with a suction cup, start the hydraulic cylinder to move the cover plate downward, so that the retaining ring fits the top of the wafer, and spray the developer through the nozzle to coat the wafer surface; S2: Liquid nitrogen is placed inside the cavity. As the storage box rotates, the loading unit is used to discharge the liquid nitrogen in the cavity regularly to protect the developer from oxidation and speed up the drying of the wafer. S3: Deionized water is injected into the retaining ring to soak and rinse the developed wafer. At the same time, the processing table is controlled to rotate so that the deionized water fluctuates greatly. After the wafer is cleaned, the retaining ring is controlled to move upward, and the wafer is controlled to rotate again to throw out the remaining deionized water on the top of the wafer.

[0016] The beneficial effects of the present invention are as follows: 1. The semiconductor wafer photolithography and development device and the operating method thereof described in the present invention prevent the developer coated on the wafer from flowing to the side of the wafer and prevent the developer after coating from volatilizing rapidly by means of a provided baffle ring. The first spring is provided to prevent the baffle ring from hard collision with the wafer during downward movement. The wafer is rotated during the coating process to make the nozzle coating the wafer more uniform. The rotating assembly is provided to drive the storage box to rotate while the processing table rotates, so that the baffle ring rotates. Therefore, when the wafer rotates, the baffle ring follows the rotation to prevent the baffle ring from causing wear on the wafer.

[0017] 2. The semiconductor wafer photolithography and development device and its operation method described in the present invention cooperate with the loading unit to discharge the liquid nitrogen in the cavity at a regular time while the storage box rotates. The discharged liquid nitrogen is gasified into nitrogen gas, which can dilute the oxygen in the surrounding air during the coating process to form a relatively inert environment, protecting the developer from oxidation. The baffle ring is provided to avoid rapid diffusion of the discharged nitrogen gas, thereby extending the residence time of the nitrogen gas on the wafer surface. Nitrogen gas has a dry characteristic, and the dry nitrogen gas flow can carry away the solvent in the developer, thereby achieving drying of the wafer and fixing the position and shape of the developer, which is conducive to the smooth progress of subsequent processes such as etching and coating.

[0018] 3. The semiconductor wafer photolithography and development device and operating method described in the present invention heat the liquid nitrogen sliding down the top of the second guide plate through a heating wire, so that the liquid nitrogen can be quickly vaporized, thereby preventing the liquid nitrogen from directly dripping onto the wafer and generating shock waves on the coated developer. The liquid nitrogen rapidly expands into nitrogen gas between the second guide plate and the first guide plate. Under the guidance of the second guide plate and the first guide plate, the expanded nitrogen gas can flow downward, preventing the liquid nitrogen from floating upward after vaporizing into nitrogen gas, thereby improving the contact effect between the nitrogen gas and the developer.

[0019] 4. The semiconductor wafer photolithography and development device and its operation method described in the present invention inject deionized water into the baffle ring through the water inlet. The deionized water is blocked by the baffle ring to stay on the top of the wafer and soak the position where the developer is coated on the wafer, allowing the deionized water to have more time to penetrate into the interface between the contaminants and the wafer surface. At the same time, the motor controls the processing table to rotate forward and reverse intermittently, so that the wafer rotates forward and reverse intermittently. When the wafer rotates forward, the deionized water performs a circular motion in the same direction on the top of the wafer. When the wafer reverses, the flow direction of the deionized water is quickly changed, so that the deionized water generates multiple vortices in different directions on the top of the wafer, causing the deionized water to cause large fluctuations, continuously impacting the position where the wafer is coated, and improving the rinsing effect of the wafer when soaking the wafer.

[0020] 5. The semiconductor wafer photolithography and development apparatus and operating method described in the present invention controls the rotation of the wafer to generate centrifugal force that throws out the remaining deionized water on the top of the wafer. A fixed ring is provided in conjunction with an extension ring to block the thrown deionized water and prevent it from splashing. The deionized water that strikes the fixed ring is guided by the inclined surfaces of the inner walls of the fixed ring and the extension ring to flow into the liquid accumulation chamber. While the processing table rotates, nitrogen is continuously discharged. Due to its drying properties, nitrogen can help dry the wafer after being sprayed onto the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described below with reference to the accompanying drawings.

[0022] Figure 1 is a perspective view of the present invention; Figure 2 is a cross-sectional view of the present invention; Figure 3 This is an exploded view of the processing table and the retaining ring of the present invention in cooperation; Figure 4 This is an exploded view of the slider and the fixing plate of the present invention in cooperation with each other; Figure 5 This is a three-dimensional diagram of the box and the retaining ring of the present invention in cooperation with each other; Figure 6 This is an exploded view of the insertion rod and the slot of the present invention in cooperation with each other; Figure 7 This is a three-dimensional diagram of the top plate and the card block of the present invention in cooperation with each other; Figure 8 This invention Figure 2 Enlarged view of point A in the middle; Figure 9 This invention Figure 2 Enlarged view of point B in the middle; Figure 10 This invention Figure 2 Enlarged view of point C in the middle.

[0023] In the figure: 1. Developing machine; 2. Motor; 3. Processing table; 4. Hydraulic cylinder; 5. Cover plate; 6. Storage box; 7. Filling port; 8. Stirring rod; 9. Bracket; 10. Pipeline; 11. Spray nozzle; 12. Liquid inlet tank; 13. Housing; 14. Retaining ring; 15. First spring; 16. Water inlet; 17. Insert rod; 18. Conical block; 19. Liquid accumulation chamber; 20. Slot; 21. Limiting groove; 22. Fixing ring. 23. Cavity; 24. Slide; 25. Slider; 26. Second spring; 27. Feed chamber; 28. First feed port; 29. ​​First discharge port; 30. Second feed port; 31. Second discharge port; 32. Fixed plate; 33. First guide plate; 34. Second guide plate; 35. Sliding shaft; 36. Third spring; 37. Filter plate; 38. Block; 39. Top plate; 40. Liquid storage chamber; 41. Waste chamber. DETAILED DESCRIPTION

[0024] In order to make the technical means, creative features, objectives and effects achieved by the present invention easier to understand, the present invention is further described below in conjunction with specific implementation methods.

[0025] like Figures 1 to 10 As shown, the present invention provides a technical solution, a semiconductor wafer photolithography developing device, including a developing machine 1, a motor 2 is fixedly connected to the bottom of the inner wall of the developing machine 1, the output end of the motor 2 is fixedly connected to the processing table 3, the top of the processing table 3 is provided with a suction cup, the top of the inner wall of the developing machine 1 is fixedly connected to a hydraulic cylinder 4, the output end of the hydraulic cylinder 4 is fixedly connected to a cover plate 5, the bottom of the cover plate 5 is rotatably connected to a storage box 6, the top of the cover plate 5 is provided with a filling port 7, and the bottom of the cover plate 5 is symmetrically fixedly connected to two brackets 9. A pipe 10 is fixedly connected between the two brackets 9. The bottom of the pipe 10 passes through the storage box 6 and is provided with a nozzle 11. The pipe 10 is rotatably connected to the storage box 6. Two liquid inlet grooves 12 are symmetrically opened on the outer wall of the pipe 10 and located inside the storage box 6. The bottom of the storage box 6 is fixedly connected to a sleeve box 13. The inner wall of the sleeve box 13 is slidably connected to a retaining ring 14. The top of the retaining ring 14 is fixedly connected to a first spring 15. The top of the first spring 15 is fixedly connected to the sleeve box 13. A rotating component is provided at the bottom of the storage box 6.

[0026] Through the above technical solution, the wafer is placed on the processing table 3, the wafer is fixed by the suction cup, the hydraulic cylinder 4 is started, the cover plate 5 is driven to move downward, the storage box 6 is moved downward, and the retaining ring 14 is driven to move downward, so that the retaining ring 14 is fitted to the top of the wafer, and the first spring 15 is provided to prevent the retaining ring 14 from hard collision with the wafer during the downward movement, and the retaining ring 14 is provided to prevent the developer coated on the wafer from flowing to the side of the wafer, and to prevent the developer after coating from volatilizing quickly, and the developer is fed to the storage box through the filling port 7. 6 is filled with developer, which enters the pipeline 10 along the liquid inlet tank 12 and is sprayed out through the nozzle 11 to coat the surface of the wafer. After the storage box 6 moves downward, the motor 2 is started to drive the processing table 3 to rotate, so that the wafer rotates. By rotating the wafer during the coating process, the nozzle 11 can coat the wafer more evenly, and through the provided rotating component, the storage box 6 can be driven to rotate while the processing table 3 rotates, so that the retaining ring 14 rotates. Therefore, when the wafer rotates, the retaining ring 14 follows the rotation to avoid wear of the wafer by the retaining ring 14.

[0027] Specifically, the rotating assembly includes four rods 17, which are symmetrically fixed on the bottom of the storage box 6. A liquid accumulation chamber 19 is provided on the top of the processing table 3. Several slots 20 are fixedly connected to the bottom of the inner wall of the liquid accumulation chamber 19 at equal intervals. The slots 20 are connected to each other. The inner wall of the slot 20 is set as an annular inclined surface. A limiting groove 21 is provided inside the processing table 3 and at the bottom of the slot 20. The rods 17 fit the inner wall of the limiting groove 21, and the bottoms of the four rods 17 are fixedly connected with conical blocks 18.

[0028] Through the above technical solution, the cover plate 5 moves downward, driving the storage box 6 to move downward, causing the insertion rod 17 to move downward. When the insertion rod 17 is inserted into the slot 20, the conical block 18 at its bottom presses against the inclined surface of the inner wall of the slot 20. Under the extrusion of the inclined surface of the inner wall of the slot 20, the conical block 18 gradually moves its position during the downward movement and moves into the limit groove 21, thereby driving the insertion rod 17 to be inserted into the limit groove 21. After the insertion rod 17 is inserted into the limit groove 21, as the processing table 3 rotates, it can drive the insertion rod 17 to rotate, causing the storage box 6 to rotate at the bottom of the cover plate 5.

[0029] Specifically, a cavity 23 is provided inside the sleeve 13, and two slide grooves 24 are symmetrically provided inside the sleeve 13 and below the cavity 23. A slider 25 is slidably connected to the inner wall of the slide groove 24, and one end of the slider 25 is fixedly connected to a second spring 26, and one end of the second spring 26 is fixedly connected to the sleeve 13. A loading unit is provided inside the slider 25.

[0030] Through the above technical solution, liquid nitrogen is loaded into the cavity 23, and the liquid nitrogen enters the slider 25 through the provided loading unit. While the storage box 6 rotates, the loading unit is cooperated to enable the liquid nitrogen in the slider 25 to be discharged regularly. The discharged liquid nitrogen is gasified into nitrogen gas, which can dilute the oxygen in the surrounding air during the coating process, forming a relatively inert environment, protecting the developer from oxidation, and preventing the discharged nitrogen gas from rapidly diffusing through the provided baffle ring 14, thereby extending the residence time of the nitrogen gas on the wafer surface.

[0031] Specifically, the loading unit includes a feed cavity 27, which is opened inside the slider 25, and a first feed port 28 is opened at the top of the slider 25, and a first discharge port 29 is opened at the bottom of the slider 25. The first feed port 28 and the first discharge port 29 are both communicated with the feed cavity 27. A second feed port 30 is opened inside the box 13 and at the top of the chute 24, and the second feed port 30 is communicated with the feed cavity 27. A second discharge port 31 is opened at the bottom of the box 13, and the second discharge port 31 is communicated with the chute 24. The other end of the slider 25 is set to a symmetrical inclined surface, and the outer wall of the pipe 10 is symmetrically fixed with two fixed plates 32.

[0032] Through the above technical solution, the liquid nitrogen in the cavity 23 enters the feed chamber 27 along the second feed port 30 and the first feed port 28. At this time, the second discharge port 31 is misaligned with the first discharge port 29, so that the liquid nitrogen is stored in the feed chamber 27. As the storage box 6 rotates, the sleeve box 13 is driven to rotate, so that the slider 25 rotates with the pipe 10 as the center of the circle. When the slider 25 rotates to a position close to the fixed plate 32, the fixed plate 32 is pressed against the inclined surface at one end of the slider 25. Under the pressure of the fixed plate 32, the slider 25 is pushed to slide in the slide groove 24, pressing the second spring 26. When the slider 25 moves, the first discharge port 29 moves to just above the second discharge port 31, and the liquid nitrogen in the feed chamber 27 moves along the first discharge port 29 and the second discharge port 31. The discharge port 31 discharges downward, and at the same time, the second feed port 30 is offset from the first feed port 28, so that the liquid nitrogen in the cavity 23 will not be discharged synchronously. When the slider 25 rotates to a position away from the fixed plate 32, the slider 25 is reset under the action of the second spring 26, and the liquid nitrogen in the cavity 23 can re-enter the feed chamber 27 along the second feed port 30 and the first feed port 28, and thus reciprocate. While the wafer rotates, nitrogen can be continuously released above the wafer to protect the coating developer from being oxidized. Nitrogen has a drying characteristic, and the dry nitrogen gas flow can take away the solvent in the developer, thereby achieving the drying of the wafer and fixing the position and shape of the developer, which is conducive to the smooth progress of subsequent processes such as etching and coating.

[0033] Specifically, the bottom of the sleeve 13 is fixedly connected to a first guide plate 33, the first guide plate 33 is set to be annular and the bottom is set to be an annular arc surface, the bottom of the sleeve 13 and the inner side of the first guide plate 33 is fixedly connected to a second guide plate 34, the second guide plate 34 is set to be annular and the top is set to be an annular arc surface, and a heating wire is set inside the second guide plate 34.

[0034] Through the above technical solution, the liquid nitrogen discharged from the second discharge port 31 falls on the second guide plate 34 and flows downward along the inclined surface of the top of the second guide plate 34. At this time, the heating wire is started to heat the liquid nitrogen sliding down from the top of the second guide plate 34, so that the liquid nitrogen can be quickly vaporized, thereby preventing the liquid nitrogen from directly dripping onto the wafer and generating a shock wave on the coated developer. The liquid nitrogen quickly expands into nitrogen between the second guide plate 34 and the first guide plate 33. Under the guidance of the second guide plate 34 and the first guide plate 33, the expanded nitrogen can flow downward, thereby preventing the liquid nitrogen from floating upward after being vaporized into nitrogen, thereby improving the contact effect between the nitrogen and the developer.

[0035] Specifically, a plurality of water inlets 16 are equidistantly formed on the outer wall of the retaining ring 14 .

[0036] Through the above technical solution, after the retaining ring 14 is controlled to contact the wafer, the sleeve 13 is continuously controlled to move downward, so that the sleeve 13 slides outside the retaining ring 14, and the water inlet 16 is covered in the sleeve 13, and the water inlet 16 is sealed to prevent air from entering the retaining ring 14 from the water inlet 16. When the wafer after development is rinsed, the wafer is fixed again by the suction cup, and the sleeve 13 is controlled to move downward so that the retaining ring 14 contacts the wafer. At this time, the water inlet 16 is not covered, and deionized water is injected into the retaining ring 14 through the water inlet 16. The deionized water is blocked by the retaining ring 14, so that the deionized water stays on the top of the wafer. The position where the wafer is coated with developer is soaked to allow deionized water more time to penetrate into the interface between the contaminant and the wafer surface, and at the same time, the processing table 3 is controlled by motor 2 to rotate forward and reverse intermittently, so that the wafer rotates forward and reverse intermittently. When the wafer rotates forward, the deionized water makes a circular motion in the same direction on the top of the wafer. When the wafer reverses, the flow direction of the deionized water is quickly changed, so that the deionized water generates multiple vortices in different directions on the top of the wafer, causing the deionized water to cause large fluctuations, continuously impacting the position where the wafer is coated, and improving the rinsing effect of the wafer when soaking the wafer. After the wafer cleaning is completed, the motor 2 is turned off.

[0037] Specifically, a fixing ring 22 is fixedly connected between the four insertion rods 17, and the inner wall of the fixing ring 22 is set as an upward inclined surface. An extension ring is fixedly connected to the bottom of the fixing ring 22, and the inner wall of the extension ring is set as a downward inclined surface.

[0038] By the above technical solution, after the wafer is cleaned, the hydraulic cylinder 4 is retracted, and the control sleeve 13 moves upward, so that the retaining ring 14 moves upward, no longer closing the top of the wafer, and keeping the insertion rod 17 in the corresponding slot 20. At this time, the deionized water soaking the wafer slides from the top of the wafer and enters the liquid accumulation chamber 19. The deionized water in the liquid accumulation chamber 19 is discharged from the slot 20 and separated from the wafer. At this time, the motor 2 is started to drive the processing table 3 to rotate, so that the wafer rotates. The centrifugal force generated is used to throw out the remaining deionized water on the top of the wafer. The fixed ring 22 cooperates with the extension ring to block the thrown deionized water and prevent the deionized water from splashing everywhere. The deionized water that hits the fixed ring 22 is guided by the inclined surface of the inner wall of the fixed ring 22 and the extension ring so that it can flow into the liquid accumulation chamber 19. While the processing table 3 rotates, it continues to discharge nitrogen. Because nitrogen has a drying property, it can help dry the wafer after being sprayed on the wafer surface.

[0039] Specifically, the inner wall of the developing machine 1 is equidistantly and slidingly connected with four sliding shafts 35 with the motor 2 as the center, and the top of the four sliding shafts 35 is fixedly connected with a filter plate 37, and the top of the filter plate 37 is set as an annular inclined surface. The outer walls of the four sliding shafts 35 are all sleeved with a third spring 36, and the bottom of the third spring 36 is fixedly connected to the developing machine 1, and the top of the third spring 36 is fixedly connected to the filter plate 37. The bottom of the processing table 3 is symmetrically fixedly connected with two top plates 39, and the top of the filter plate 37 is symmetrically fixedly connected with two clamping blocks 38. The top of the clamping blocks 38 is set as a symmetrical inclined surface, and the clamping blocks 38 are used in conjunction with the top plate 39. A liquid storage chamber 40 is opened at the top of the developing machine 1 and below the filter plate 37, and a waste chamber 41 is opened at the top of the developing machine 1 and outside the filter plate 37. The liquid storage chamber 40 and the waste chamber 41 are both set as annular shapes.

[0040] Through the above technical solution, the deionized water discharged from the slot 20 falls on the filter plate 37 and slides down along the slope of the filter plate 37. During the sliding process, the deionized water is filtered by the filter plate 37, so that the colloid carried by the deionized water for rinsing the wafers remains on the filter plate 37 and slides down along the slope of the filter plate 37 and enters the waste chamber 41 for collection. The filtered deionized water is collected by the liquid storage chamber 40. When the processing table 3 rotates, the top plate 39 is driven to rotate. When the top plate 39 rotates to the position close to the card When the filter plate 37 is in the position of the block 38, the top plate 39 is pressed against the inclined surface at the top of the block 38. Under the squeezing action of the top plate 39, the block 38 is pushed downward, causing the filter plate 37 to move downward and compressing the third spring 36. When the top plate 39 rotates to a position away from the block 38, the squeezing action of the top plate 39 is lost. Under the action of the third spring 36, the filter plate 37 bounces up quickly, and thus reciprocates. While the processing table 3 rotates, the filter plate 37 is driven to vibrate continuously to prevent debris in the deionized water from clogging the filter plate 37.

[0041] Specifically, a plurality of stirring rods 8 are fixedly connected to the bottom of the cover plate 5 at equal intervals.

[0042] Through the above technical solution, while the processing table 3 rotates, it drives the storage box 6 to rotate at the bottom of the cover plate 5, and stirs the developer in the storage box 6 through the stirring rod 8 at the bottom of the cover plate 5 to prevent the developer from precipitating or stratifying after being placed for a long time.

[0043] An operating method for a semiconductor wafer photolithography and development device is provided. The operating method is applicable to the above-mentioned semiconductor wafer photolithography and development device. The operating method steps are as follows: S1: Place the wafer on the processing table 3, fix the wafer with the suction cup, start the hydraulic cylinder 4, drive the cover plate 5 to move downward, make the retaining ring 14 fit the top of the wafer, and spray the developer through the nozzle 11 to coat the wafer surface; S2: Liquid nitrogen is loaded into the cavity 23. While the storage box 6 rotates, the loading unit is coordinated to discharge the liquid nitrogen in the cavity 23 at a regular time to protect the developer from oxidation and accelerate the drying of the wafer. S3: Deionized water is injected into the retaining ring 14 to soak and rinse the developed wafer. At the same time, the processing table 3 is controlled to rotate to make the deionized water fluctuate greatly. After the wafer is cleaned, the retaining ring 14 is controlled to move upward, and the wafer is controlled to rotate again to throw out the remaining deionized water on the top of the wafer.

[0044] When in use, the wafer is placed on the processing table 3, the wafer is fixed by the suction cup, the hydraulic cylinder 4 is started, the cover plate 5 is driven to move downward, the storage box 6 is moved downward, and the retaining ring 14 is driven to move downward so that the retaining ring 14 is in contact with the top of the wafer, and the first spring 15 is provided to prevent the retaining ring 14 from hard collision with the wafer during the downward movement. The retaining ring 14 is provided to prevent the developer coated on the wafer from flowing to the side of the wafer and to prevent the developer after coating from volatilizing quickly. The developer is loaded into the storage box 6 through the filling port 7, and the developer enters the pipeline 10 along the liquid inlet groove 12 and is sprayed out through the nozzle 11 to coat the surface of the wafer. After the storage box 6 moves downward, the insertion rod 17 moves downward. When the insertion rod 17 is inserted into the slot 20, its bottom The conical block 18 at the top is pressed against the inclined surface of the inner wall of the slot 20. Under the extrusion of the inclined surface of the inner wall of the slot 20, the conical block 18 gradually moves its position in the process of moving downward and moves into the limit groove 21, thereby driving the insertion rod 17 to be inserted into the limit groove 21. After the insertion rod 17 is inserted into the limit groove 21, the motor 2 is started to drive the processing table 3 to rotate, so that the wafer rotates. By rotating the wafer during the coating process, the coating of the wafer by the nozzle 11 is more uniform. As the processing table 3 rotates, the insertion rod 17 can be driven to rotate, so that the storage box 6 rotates at the bottom of the cover plate 5, and the retaining ring 14 rotates. As the wafer rotates, the retaining ring 14 follows the rotation to avoid wear of the wafer by the retaining ring 14. While the processing table 3 rotates, the storage box 6 is driven to rotate at the bottom of the cover plate 5. The cover 5 rotates, and the developer in the storage box 6 is stirred by the stirring rod 8 at the bottom of the cover plate 5 to prevent the developer from settling or stratifying after being placed for a long time. Liquid nitrogen is filled into the cavity 23, and the liquid nitrogen in the cavity 23 enters the feed chamber 27 along the second feed port 30 and the first feed port 28. At this time, the second discharge port 31 is misaligned with the first discharge port 29, so that the liquid nitrogen accumulates in the feed chamber 27. As the storage box 6 rotates, the sleeve box 13 is driven to rotate, so that the slider 25 rotates with the pipe 10 as the center of the circle. When the slider 25 rotates to a position close to the fixed plate 32, the fixed plate 32 is pressed against the inclined surface of one end of the slider 25. Under the pressure of the fixed plate 32, the slider 25 is pushed to slide in the slide groove 24, pressing the second spring 26. While the slider 25 moves , the first discharge port 29 moves to just above the second discharge port 31, and the liquid nitrogen in the feed chamber 27 is discharged downward along the first discharge port 29 and the second discharge port 31. At the same time, the second feed port 30 is misaligned with the first feed port 28, so that the liquid nitrogen in the cavity 23 will not be discharged synchronously. When the slider 25 rotates to a position away from the fixed plate 32, the slider 25 is reset under the action of the second spring 26, and the liquid nitrogen in the cavity 23 can re-enter the feed chamber 27 along the second feed port 30 and the first feed port 28. This reciprocating process can continuously discharge liquid nitrogen above the wafer while the wafer rotates. The discharged liquid nitrogen is gasified into nitrogen gas, which can dilute the oxygen in the surrounding air during the coating process, forming a relatively inert environment to protect the developer from oxidation.And nitrogen has the characteristic of drying. The dry nitrogen gas flow can take away the solvent in the developer, thereby drying the wafer and fixing the position and shape of the developer, which is conducive to the smooth progress of subsequent processes such as etching and coating. The liquid nitrogen discharged from the second discharge port 31 falls on the second guide plate 34 and flows downward along the inclined surface of the top of the second guide plate 34. At this time, the heating wire is started to heat the liquid nitrogen sliding down the top of the second guide plate 34, so that the liquid nitrogen can be quickly vaporized to avoid the liquid nitrogen directly dripping onto the wafer and colliding with the coated developer to produce a shock wave. The liquid nitrogen quickly expands into nitrogen between the second guide plate 34 and the first guide plate 33. Under the guidance of the second guide plate 34 and the first guide plate 33, the expanded nitrogen can flow downward to avoid the liquid nitrogen When the gasified nitrogen floats upward, the contact effect between the nitrogen and the developer is improved. After the control baffle ring 14 contacts the wafer, the control sleeve 13 is continuously moved downward to slide the sleeve 13 outside the baffle ring 14, and the water inlet 16 is covered in the sleeve 13. The water inlet 16 is sealed to prevent air from entering the baffle ring 14 from the water inlet 16. When the wafer after development is rinsed, the wafer is fixed again by the suction cup, and the control sleeve 13 is moved downward to contact the baffle ring 14 with the wafer. At this time, the water inlet 16 is not covered, and deionized water is injected into the baffle ring 14 through the water inlet 16. The deionized water is blocked by the baffle ring 14, so that the deionized water stays on the top of the wafer and soaks the position where the wafer is coated with the developer, so that the deionized water has more time to penetrate into the pollutants and The interface of the wafer surface, and at the same time, the processing table 3 is controlled by the motor 2 to rotate forward and reverse intermittently, so that the wafer rotates forward and reverse intermittently. When the wafer rotates forward, the deionized water makes a circular motion in the same direction on the top of the wafer. When the wafer reverses, the flow direction of the deionized water is quickly changed, so that the deionized water generates multiple vortices in different directions on the top of the wafer, causing the deionized water to cause large fluctuations, continuously impacting the position of the wafer coating, and improving the rinsing effect of the wafer when soaking the wafer. After the wafer is cleaned, the hydraulic cylinder 4 is retracted, and the control sleeve 13 moves upward, so that the retaining ring 14 moves upward, no longer closing the top of the wafer, and keeping the insertion rod 17 staying in the corresponding slot 20. At this time, the deionized water soaking the wafer slides from the top of the wafer and enters the liquid accumulation chamber 19, entering The deionized water in the accumulator chamber 19 is discharged from the slot 20 and separated from the wafer. At this time, the motor 2 is started to drive the processing table 3 to rotate, so that the wafer rotates. The deionized water remaining on the top of the wafer is thrown out by the centrifugal force generated. The fixed ring 22 is provided to cooperate with the extension ring to block the thrown deionized water to prevent the deionized water from splashing everywhere. The deionized water that hits the fixed ring 22 is guided by the inclined surface of the inner wall of the fixed ring 22 and the extension ring to flow into the accumulator chamber 19. While the processing table 3 rotates, it continues to discharge nitrogen. Because nitrogen has a drying property, it can help dry the wafer after being sprayed onto the surface of the wafer. The deionized water discharged from the slot 20 falls on the filter plate 37 and slides down along the inclined surface of the filter plate 37. In the process of sliding,The deionized water is filtered by the filter plate 37, so that the colloid carried by the deionized water when rinsing the wafers remains on the filter plate 37 and slides down the inclined surface of the filter plate 37 to be collected in the waste chamber 41. The filtered deionized water is collected by the liquid storage chamber 40. As the processing table 3 rotates, the top plate 39 is driven to rotate. When the top plate 39 rotates to a position close to the block 38, the top plate 39 presses against the inclined surface of the top of the block 38. Under the pressure of the top plate 39, the block 38 is pushed downward, causing the filter plate 37 to move downward, compressing the third spring 36. When the top plate 39 rotates to a position away from the block 38, the pressure of the top plate 39 is lost. Under the action of the third spring 36, the filter plate 37 quickly bounces upward, and this reciprocating cycle is repeated. As the processing table 3 rotates, the filter plate 37 is driven to vibrate continuously, preventing the debris in the deionized water from clogging the filter plate 37.

[0045] The above-mentioned front, back, left, right, up and down are all based on the Figure 1 As a benchmark, according to the person's observation perspective, the side of the device facing the observer is defined as the front, the left side of the observer is defined as the left, and so on.

[0046] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the scope of protection of the present invention.

[0047] The basic principles, main features, and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the foregoing embodiments. The foregoing embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and modifications are intended to fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor wafer photolithography and development device, characterized in that: The invention comprises a developing machine (1), wherein the bottom of the inner wall of the developing machine (1) is fixedly connected to a motor (2), the output end of the motor (2) is fixedly connected to a processing table (3), the top of the processing table (3) is provided with a suction cup, the top of the inner wall of the developing machine (1) is fixedly connected to a hydraulic cylinder (4), the output end of the hydraulic cylinder (4) is fixedly connected to a cover plate (5), the bottom of the cover plate (5) is rotatably connected to a material storage box (6), the top of the cover plate (5) is provided with a filling port (7), the bottom of the cover plate (5) is symmetrically fixedly connected to two brackets (9), and a pipe ( 10), the bottom of the pipe (10) passes through the storage box (6) and is provided with a nozzle (11), the pipe (10) is rotatably connected to the storage box (6), the outer wall of the pipe (10) and located inside the storage box (6) are symmetrically provided with two liquid inlet grooves (12), the bottom of the storage box (6) is fixedly connected to the sleeve box (13), the inner wall of the sleeve box (13) is slidably connected to the retaining ring (14), the top of the retaining ring (14) is fixedly connected to the first spring (15), the top of the first spring (15) is fixedly connected to the sleeve box (13), and the bottom of the storage box (6) is provided with a rotating component.

2. The semiconductor wafer photolithography and developing device according to claim 1, characterized in that: The rotating assembly includes four insert rods (17), and the four insert rods (17) are symmetrically fixedly installed at the bottom of the storage box (6). A liquid accumulation cavity (19) is provided on the top of the processing table (3). The bottom of the inner wall of the liquid accumulation cavity (19) is fixedly connected with a plurality of slots (20) at equal intervals. The plurality of slots (20) are connected to each other. The inner wall of the slot (20) is set as an annular inclined surface. A limiting groove (21) is provided inside the processing table (3) and at the bottom of the slot (20). The insert rod (17) fits the inner wall of the limiting groove (21), and the bottoms of the four insert rods (17) are fixedly connected with a conical block (18).

3. The semiconductor wafer photolithography and developing device according to claim 2, characterized in that: A cavity (23) is provided inside the sleeve (13), and two slide grooves (24) are symmetrically provided inside the sleeve (13) and below the cavity (23). A slider (25) is slidably connected to the inner wall of the slide groove (24), and one end of the slider (25) is fixedly connected to a second spring (26), and one end of the second spring (26) is fixedly connected to the sleeve (13). A loading unit is provided inside the slider (25).

4. The semiconductor wafer photolithography and developing device according to claim 3, characterized in that: The loading unit includes a feed cavity (27), the feed cavity (27) is opened inside the slider (25), a first feed port (28) is opened at the top of the slider (25), a first discharge port (29) is opened at the bottom of the slider (25), the first feed port (28) and the first discharge port (29) are both communicated with the feed cavity (27), a second feed port (30) is opened inside the sleeve (13) and located at the top of the chute (24), the second feed port (30) is communicated with the feed cavity (27), a second discharge port (31) is opened at the bottom of the sleeve (13), the second discharge port (31) is communicated with the chute (24), the other end of the slider (25) is set as a symmetrical inclined surface, and the outer wall of the pipe (10) is symmetrically fixedly connected with two fixing plates (32).

5. The semiconductor wafer photolithography and developing device according to claim 4, characterized in that: The bottom of the sleeve (13) is fixedly connected to a first guide plate (33), the first guide plate (33) is arranged in an annular shape and the bottom is arranged in an annular arc surface, the bottom of the sleeve (13) is fixedly connected to a second guide plate (34) located inside the first guide plate (33), the second guide plate (34) is arranged in an annular shape and the top is arranged in an annular arc surface, and a heating wire is arranged inside the second guide plate (34).

6. The semiconductor wafer photolithography and developing device according to claim 5, characterized in that: The outer wall of the retaining ring (14) is provided with a plurality of water inlets (16) at equal intervals.

7. The semiconductor wafer photolithography and developing device according to claim 6, characterized in that: A fixing ring (22) is fixedly connected between the four insertion rods (17), the inner wall of the fixing ring (22) is set as an upward inclined surface, and an extension ring is fixedly connected to the bottom of the fixing ring (22), the inner wall of the extension ring is set as a downward inclined surface.

8. The semiconductor wafer photolithography and developing device according to claim 7, characterized in that: The inner wall of the developing machine (1) is equidistantly connected to four sliding shafts (35) with the motor (2) as the center. The tops of the four sliding shafts (35) are fixedly connected to filter plates (37). The tops of the filter plates (37) are set as an annular inclined surface. The outer walls of the four sliding shafts (35) are all sleeved with third springs (36). The bottoms of the third springs (36) are fixedly connected to the developing machine (1). The tops of the third springs (36) are fixedly connected to the filter plates (37). The bottoms of the processing tables (3) are symmetrically fixed. Two top plates (39) are fixedly connected, and two clamping blocks (38) are symmetrically fixedly connected to the top of the filter plate (37). The top of the clamping blocks (38) is set as a symmetrical inclined surface. The clamping blocks (38) are used in conjunction with the top plates (39). A liquid storage chamber (40) is opened at the top of the developing machine (1) and below the filter plate (37). A waste chamber (41) is opened at the top of the developing machine (1) and outside the filter plate (37). Both the liquid storage chamber (40) and the waste chamber (41) are set in an annular shape.

9. The semiconductor wafer photolithography and developing device according to claim 8, characterized in that: A plurality of stirring rods (8) are fixedly connected at equal intervals to the bottom of the cover plate (5).

10. An operating method for a semiconductor wafer photolithography and development device, the operating method being applicable to the semiconductor wafer photolithography and development device according to claim 9, characterized in that: The steps for this operation are as follows: S1: Place the wafer on the processing table (3), fix the wafer with a suction cup, start the hydraulic cylinder (4), drive the cover plate (5) to move downward, make the retaining ring (14) fit the top of the wafer, and spray the developer through the nozzle (11) to coat the surface of the wafer; S2: Liquid nitrogen is loaded into the cavity (23), and while the storage box (6) rotates, the loading unit is coordinated to discharge the liquid nitrogen in the cavity (23) at a fixed time, thereby protecting the developer from oxidation and accelerating the drying of the wafer; S3: Deionized water is injected into the retaining ring (14) to soak and rinse the developed wafer, and at the same time, the processing table (3) is controlled to rotate to make the deionized water fluctuate greatly. After the wafer is cleaned, the retaining ring (14) is controlled to move upward, and the wafer is controlled to rotate again to throw out the remaining deionized water on the top of the wafer.

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