Hole filling method of substrate, substrate and electronic equipment
By forming an insulating mask on the surface of the substrate and filling the openings thereof with conductive material, the problem of an excessively thick surface metal layer during the substrate through-hole filling process is solved, and the conductive circuit manufacturing process is simplified.
Patent Information
- Application Number
- CN202510726231.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-05-08
- Filing Date
- 2025-05-30
- Publication Date
- 2025-09-05
AI Technical Summary
In the prior art, during the through-hole filling process of a substrate, a thick metal layer is formed on the surface of the substrate, which affects the subsequent formation of metal circuits.
An insulating mask is formed on the surface of the substrate, and conductive material is filled into the through-holes through the openings of the insulating mask to prevent conductive material from being deposited on the surface. The insulating mask is used as a mask for circuit etching to reduce the formation of surface metal.
The formation of the metal layer on the substrate surface is reduced, the impact on the conductive circuit is reduced, and the subsequent circuit production process is simplified.
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Figure CN120600632A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of electronic components, and in particular to a method for filling holes in a substrate, a substrate, and an electronic device. Background Art
[0002] The upper and lower opposite surfaces of the substrate can be penetrated by through holes, and the substrate can be subsequently immersed in an electroplating solution to fill the through holes.
[0003] However, this solution will also cause a thicker metal layer to be formed on the surface of the substrate. This thicker metal layer is redundant for the subsequent formation of metal circuits on the surface of the substrate and is not conducive to the subsequent formation of metal circuits. Summary of the Invention
[0004] The present application provides a substrate hole filling method, a substrate, and an electronic device. During the process of filling the through holes of the substrate, the metal present on the surface of the substrate is reduced, thereby reducing the impact on the production of conductive circuits.
[0005] To achieve the above objectives, this application adopts the following technical solutions:
[0006] In a first aspect, a method for filling a hole in a substrate is provided, the method comprising: providing a substrate having a first surface and a through hole extending through the substrate; forming an insulating mask on the first surface, the insulating mask having an opening, the opening exposing the through hole; and filling the through hole with a conductive material.
[0007] Compared with the existing solution of immersing the substrate in the electroplating solution to fill the through-holes, the solution of the present application first forms an insulating mask on the first surface of the substrate and then fills the through-holes with conductive material. Since the insulating mask has an opening that exposes the through-holes, the conductive material can enter the through-holes through the opening of the insulating mask. At the same time, since the insulating mask covers the first surface, the conductive material can be prevented from being formed on the first surface during the process of filling the through-holes of the substrate, thereby avoiding the phenomenon in the existing technology that a thicker metal layer is formed on the first surface while filling the holes, thereby reducing the impact on the subsequent production of conductive circuits.
[0008] In combination with the first aspect, in some embodiments of the first aspect, the method further includes: removing the insulating mask.
[0009] In combination with the first aspect, in certain embodiments of the first aspect, before forming the insulating mask on the first surface, the method further includes: forming a conductive layer on the first surface, wherein the conductive layer is located between the first surface and the insulating mask.
[0010] By forming a conductive layer between the first surface and the insulating mask on the first surface, the insulating mask can be used as a mask for etching circuits in the conductive layer. The insulating mask can not only reduce the metal present on the surface of the substrate and reduce the impact on the production of conductive circuits during the process of filling the through holes of the substrate, but also serve as a mask for etching circuits in the conductive layer.
[0011] In combination with the first aspect, in certain embodiments of the first aspect, the conductive layer is made by PVD, or the conductive layer includes an insulating substrate and a metal layer formed on the insulating substrate.
[0012] In combination with the first aspect, in certain embodiments of the first aspect, an insulating mask is formed on the first surface, the insulating mask having an opening, and the opening exposes the through hole, including: forming an insulating mask on the first surface; forming an opening on the insulating mask, and the opening exposes the through hole.
[0013] In combination with the first aspect, in certain embodiments of the first aspect, the substrate further includes a second surface opposite to the first surface, and after an insulating mask is formed on the first surface, the insulating mask having an opening, and the opening exposing the through hole, the method further includes: forming an insulating mask on the second surface, the insulating mask having an opening, and the opening exposing the through hole.
[0014] By forming an insulating mask on the second surface of the substrate opposite to the first surface, since the insulating mask has an opening and the opening exposes the through hole, the conductive material can be prevented from being formed on the second surface. Furthermore, during the process of filling the through hole of the substrate, the metal present on the surface of the substrate can be reduced, thereby reducing the impact on the production of the conductive circuit.
[0015] In combination with the first aspect, in certain embodiments of the first aspect, the process of forming the insulating mask on the first surface and the second surface is completed in the same process.
[0016] In this way, the efficiency of filling the substrate holes can be improved.
[0017] In combination with the first aspect, in certain embodiments of the first aspect, filling the through hole with a conductive material includes: immersing the substrate formed with an insulating mask in a solution containing conductive ions, and reducing the conductive ions into a conductive element through a chemical reaction and then filling the through hole.
[0018] In a second aspect, a method for filling holes in a substrate is provided, the method comprising: providing a substrate having a first surface and a second surface relative to each other; forming an insulating mask on the first surface, the insulating mask having an opening; forming a through hole at a position corresponding to the opening on the substrate, the through hole passing through the first surface and the second surface; and filling the through hole with a conductive material.
[0019] Compared with the existing solution of immersing the substrate in the plating solution to fill the through-holes, the solution of the present application provides a substrate having a first surface and a second surface relative to each other, and then forms an insulating mask having an opening on the first surface, and then forms a through-hole penetrating the first surface and the second surface at a position corresponding to the opening on the substrate, and then fills the through-hole with a conductive material. Since the insulating mask has an opening at a position corresponding to the through-hole, the conductive material can enter the through-hole through the opening of the insulating mask. At the same time, since the insulating mask covers the first surface, the conductive material can be prevented from being formed on the first surface, and thus, in the process of filling the through-holes of the substrate, the metal present on the surface of the substrate can be reduced, thereby reducing the impact on the production of conductive circuits.
[0020] In a third aspect, a substrate is provided, which is manufactured using the manufacturing method provided in the first aspect and any one of its embodiments or the second aspect.
[0021] According to a fourth aspect, an electronic device is provided, characterized in that the electronic device includes the substrate provided by the third aspect.
[0022] Among them, the technical effects brought about by any implementation of the third aspect to the fourth aspect can refer to the technical effects brought about by different implementations of the first aspect mentioned above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 A schematic flow chart of a method for filling a hole in a substrate provided in an embodiment of the present application;
[0024] Figures 2a-2e A schematic diagram of a substrate hole filling process provided in this application;
[0025] Figure 3 A schematic diagram of another process of filling a hole substrate provided in an embodiment of the present application;
[0026] Figure 4 A schematic flow chart of another substrate hole filling method provided in an embodiment of the present application;
[0027] Figures 5a-5d A schematic diagram of another process of filling a hole substrate provided in an embodiment of the present application.
[0028] Reference numerals: substrate- 10 , first surface- 101 , through hole- 102 , second surface- 103 , conductive layer- 20 , insulating mask- 30 , opening- 301 , conductive material- 40 . DETAILED DESCRIPTION
[0029] In the description of this application, unless otherwise specified, "plurality" means two or more than two. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can mean: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or plural.
[0030] In addition, to facilitate the clear description of the technical solutions of the embodiments of the present application, in the embodiments of the present application, the words "first" and "second" are used to distinguish between identical or similar items with substantially the same functions and effects. Those skilled in the art will understand that the words "first" and "second" do not limit the quantity or execution order, and the words "first" and "second" do not necessarily mean different.
[0031] At the same time, in the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner to facilitate understanding.
[0032] It will be understood that the “embodiment” mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, the various embodiments in the entire specification do not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It will be understood that in the various embodiments of the present application, the size of the sequence number of each process does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.
[0033] It can be understood that in this application, "when", "if" and "if" all mean that corresponding processing will be taken under certain objective circumstances, and do not limit the time, nor do they require judgment actions when implementing them, nor do they mean that there are other limitations.
[0034] It is understood that some optional features in the embodiments of the present application may, in certain scenarios, be implemented independently of other features, such as the solution on which they are currently based, to solve corresponding technical problems and achieve corresponding effects. They may also be combined with other features in certain scenarios as needed. Accordingly, the devices provided in the embodiments of the present application may also implement these features or functions accordingly, which will not be described in detail here.
[0035] In this application, unless otherwise specified, the same or similar parts between the various embodiments can refer to each other. In the various embodiments of this application, and the various implementation methods in each embodiment, if there is no special explanation and logical conflict, the terms and / or descriptions between different embodiments and the various implementation methods in each embodiment are consistent and can be referenced to each other. The technical features in different embodiments and the various implementation methods in each embodiment can be combined to form new embodiments, implementation methods, implementation methods, or implementation methods according to their inherent logical relationships. The following implementation methods of this application do not constitute a limitation on the scope of protection of this application.
[0036] The upper and lower opposite surfaces of the substrate can be penetrated by through holes, and the substrate can be immersed in an electroplating solution to fill the through holes.
[0037] However, this solution will also cause a thicker metal layer to be formed on the surface of the substrate. This thicker metal layer is redundant for the subsequent formation of metal circuits on the surface of the substrate and is not conducive to the subsequent formation of metal circuits.
[0038] After a thicker metal layer is formed on the surface, people generally consider thinning the metal layer or directly removing the surface metal layer, which makes the subsequent process of forming conductive circuits more complicated.
[0039] To solve this problem, the present application provides a method for filling holes in a substrate. Figure 1 A schematic diagram of a method for filling a hole in a substrate provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the substrate hole filling method provided in this application may include the following steps:
[0040] Step 101 : providing a substrate 10 , wherein the substrate 10 has a first surface 101 and a through hole 102 penetrating the substrate 10 .
[0041] It should be noted that the material of the substrate 10 can be glass, ceramic, etc., and this application does not impose any specific restrictions on this.
[0042] The number of the through hole 102 on the substrate 10 may be one, or the number of the through holes 102 on the substrate 10 may be multiple, and this application does not impose any specific limitation on this.
[0043] The substrate 10 further includes a second surface 103 opposite to the first surface 101 .
[0044] like Figure 2a As shown, the substrate 10 has a first surface 101 and a second surface 103 opposite to each other, and a through hole 102 passing through the substrate 10 .
[0045] Step 102 : forming a conductive layer 20 on the first surface 101 . The conductive layer 20 is located between the first surface 101 and the insulating mask 30 .
[0046] In some embodiments, the conductive layer 20 is formed on the first surface 101 , and the conductive layer 20 is located between the first surface 101 and the insulating mask 30 .
[0047] In yet other embodiments, Figure 3 A schematic diagram of another process of filling a hole substrate provided in an embodiment of the present application is shown as follows: Figure 3 As shown, in addition to the conductive layer 20 formed on the first surface 101 , a conductive layer 20 is also formed on the hole wall of the through hole 102 . Thus, the conductive layer 20 on the hole wall can be used as a seed layer in step 103 so that the conductive material 40 can be filled into the through hole 102 .
[0048] As a possible implementation manner, the conductive layer 20 is formed by PVD.
[0049] It should be noted that the specific description of this implementation method can refer to the existing solution, and this application will not describe it in detail here.
[0050] As another possible implementation, a conductive layer 20 is provided. The conductive layer 20 includes an insulating substrate and a metal layer formed on the insulating substrate. The conductive layer 20 covers the first surface 101 .
[0051] Preferably, the insulating substrate may be a PI film.
[0052] The material of the metal layer may be the same as that of the conductive material 40 , or the material of the metal layer may be different from that of the conductive material 40 , and this application does not impose any specific limitation on this.
[0053] Preferably, the material of the metal layer may be copper.
[0054] It should be noted that, in this implementation, the specific description of forming the insulating substrate and the metal layer on the insulating substrate can refer to the existing solutions, and this application will not describe them in detail.
[0055] Based on step 102, by forming a conductive layer 20 located between the first surface 101 and the insulating mask 30 on the first surface 101, the insulating mask 30 can be used as a mask for circuit etching of the conductive layer 20. The insulating mask 30 can not only reduce the metal present on the surface of the substrate 10 and reduce the impact on the production of conductive circuits during the process of filling the through hole 102 of the substrate 10, but also serve as a mask for circuit etching of the conductive layer 20.
[0056] It should be noted that, in some embodiments, step 102 may be omitted, that is, after executing step 101, step 103 may be executed directly.
[0057] Step 103 : forming an insulating mask 30 on the first surface 101 . The insulating mask 30 has an opening 301 , and the opening 301 exposes the through hole 102 .
[0058] It should be noted that the insulating mask 30 may be a dry film, which is a polymer material, such as a photosensitive resin (e.g., acrylate), which can undergo a polymerization reaction after being irradiated with ultraviolet light and stably adhere to the first surface 101. Of course, the insulating mask 30 may also be other types of insulating materials, and this application does not impose any specific restrictions on this.
[0059] As a possible implementation, Figure 2b As shown, an insulating mask 30 is formed on the first surface 101. Furthermore, an insulating mask 30 may also be formed on the second surface 103. For details on forming the insulating mask 30 on the second surface 103, refer to the description of step 104. Exemplarily, the insulating mask 30 is formed on the first surface 101 by immersing the first surface 101 in a solution containing an insulating material, by doctor blade coating, by roller coating, or by spraying.
[0060] Afterwards, if Figure 2c As shown, an opening 301 is formed on the insulating mask 30, and the opening 301 exposes the through hole 102. Exemplarily, the insulating mask 30 is patterned so that the insulating mask 30 is formed with the opening 301 that leaks out of the through hole 102.
[0061] As another possible implementation, an insulating mask 30 is provided, which has an opening 301. The opening 301 on the insulating mask 30 corresponds to the through hole 102 on the substrate 10. The insulating mask 30 is covered on the substrate 10 so that the opening 301 of the insulating mask 30 leaks out of the through hole 102.
[0062] Step 104 : forming an insulating mask 30 on the second surface 103 . The insulating mask 30 has an opening 301 , and the opening 301 exposes the through hole 102 .
[0063] It should be noted that the specific description of forming the insulating mask 30 on the second surface 103 can refer to the relevant description of step 103, and this application will not repeat it here.
[0064] In some embodiments, the process of forming the insulating mask 30 on the first surface 101 and the second surface 103 is completed in the same process, that is, the insulating mask 30 on the first surface 101 and the insulating mask 30 on the second surface 103 can be formed simultaneously. This can improve the efficiency of filling the holes in the substrate 10. For example, the substrate 10 can be immersed in a solution containing an insulating material and then removed. The insulating mask 30 can be formed simultaneously on the first surface 101 and the second surface 103 of the substrate 10. Alternatively, the substrate 10 can be suspended in the air and the insulating mask 30 can be formed simultaneously on the first surface 101 and the second surface 103 using methods such as blade coating, roller coating, or spraying.
[0065] In some other embodiments, the process of forming the insulating mask 30 on the first surface 101 and the second surface 103 can also be completed in different processes, that is, the insulating mask 30 on the first surface 101 and the insulating mask 30 on the second surface 103 can be formed in steps. For example, the insulating mask 30 is first formed on the first surface 101 by using a method such as blade coating, roller coating, or spraying, and then the insulating mask 30 is formed on the second surface 103 by using a method such as blade coating, roller coating, or spraying. Alternatively, the insulating mask 30 is first formed on the second surface 103 by using a method such as blade coating, roller coating, or spraying, and then the insulating mask 30 is formed on the first surface 101 by using a method such as blade coating, roller coating, or spraying.
[0066] Based on step 104, an insulating mask 30 is formed on the second surface 103 of the substrate 10 opposite to the first surface 101. Since the insulating mask 30 has an opening 301, the opening 301 exposes the through hole 102, which can prevent the conductive material 40 from being formed on the second surface 103. Furthermore, during the process of filling the through hole 102 of the substrate 10, the metal present on the surface of the substrate 10 can be reduced, thereby reducing the impact on the production of the conductive circuit.
[0067] It should be noted that, in some embodiments, step 104 may be omitted, that is, after executing step 103, step 105 may be executed directly.
[0068] Step 105 : Fill the through hole 102 with the conductive material 40 .
[0069] As a possible implementation method, the substrate 10 formed with the insulating mask 30 is immersed in a solution containing conductive ions, and the conductive ions are reduced to conductive elements through a chemical reaction and then filled into the through holes 102 .
[0070] It should be noted that the conductive ions may be silver ions or copper ions. Of course, the conductive ions may also be other conductive ions, and this application does not impose any specific limitation on this.
[0071] like Figure 2dAs shown, the through hole 102 of the substrate 10 is filled with a conductive material 40 .
[0072] Based on step 101, step 103 and step 105, compared with the existing solution of immersing the substrate 10 in the electroplating solution to fill the through hole 102, the solution of the present application first forms an insulating mask 30 on the first surface 101 of the substrate 10, and then fills the conductive material 40 into the through hole 102. Since the insulating mask 30 has an opening 301 exposing the through hole 102, the conductive material 40 can enter the through hole 102 through the opening 301 of the insulating mask 30. At the same time, since the insulating mask 30 covers the first surface 101, the conductive material 40 can be avoided from being formed on the first surface 101 during the process of filling the through hole 102 of the substrate 10, thereby avoiding the phenomenon in the prior art that a thicker metal layer is formed on the first surface 101 while filling the hole, thereby reducing the impact on the subsequent production of the conductive circuit.
[0073] Step 106 : Remove the insulating mask 30 .
[0074] like Figure 2e , which is a schematic diagram of the process after removing the insulating mask 30, the insulating mask 30 on the substrate 10 has been removed, and there is no conductive material 40 on the surface of the substrate 10. In this way, the substrate 10 can be processed in the next step.
[0075] This application provides another method for filling holes in a substrate 10. Figure 4 A schematic flow chart of another substrate hole filling method provided in an embodiment of the present application is shown as follows: Figure 4 As shown, the substrate hole filling method provided in this application may include the following steps:
[0076] Step 401 : Provide a substrate 10 , wherein the substrate 10 has a first surface 101 and a second surface 103 opposite to each other.
[0077] like Figure 5a As shown, the substrate 10 has a first surface 101 and a second surface 103 opposite to each other.
[0078] It should be noted that the specific description of step 401 can refer to the relevant description of step 101, and this application will not repeat it here.
[0079] Step 402 : forming an insulating mask 30 on the first surface 101 , wherein the insulating mask 30 has an opening 301 .
[0080] As a possible implementation manner, an insulating mask 30 having an opening 301 is provided, and the insulating mask 30 covers the first surface 101 .
[0081] As another possible implementation, an insulating mask 30 is formed on the first surface 101, such as Figure 5b As shown, the first surface 101 of the substrate 10 is completely covered with an insulating mask 30. Exemplarily, the insulating mask 30 is formed on the first surface 101 by dipping the substrate into a solution containing an insulating material, applying a doctor blade, roller coating, or spraying.
[0082] Afterwards, if Figure 5c As shown, an opening 301 is formed on the insulating mask 30. Exemplarily, the insulating mask 30 is patterned so that the insulating mask 30 is formed with the opening 301.
[0083] Step 403 : forming a through hole 102 at a position corresponding to the opening 301 on the substrate 10 , wherein the through hole 102 passes through the first surface 101 and the second surface 103 .
[0084] like Figure 5d As shown, a through hole 102 is formed on the substrate 10 at a position corresponding to the opening 301 , penetrating the first surface 101 and the second surface 103 .
[0085] As a possible implementation method, a Bessel laser light source is used to change the physical or chemical properties of the location where a hole is required on the substrate 10, and then a cutter wheel is used to cut the substrate 10 to form a through hole 102 passing through the first surface 101 and the second surface 103.
[0086] Step 404 : Fill the through hole 102 with the conductive material 40 .
[0087] It should be noted that the specific description of step 404 can refer to the relevant description of step 105, and this application will not repeat it here.
[0088] Based on steps 401 to 404, compared to the existing solution of immersing the substrate 10 in a plating solution to fill the through-hole 102, the solution of the present application provides a substrate 10 having a first surface 101 and a second surface 103 relative to each other, and then forms an insulating mask 30 having an opening 301 on the first surface 101. Then, a through-hole 102 is formed at a position corresponding to the opening 301 on the substrate 10, which passes through the first surface 101 and the second surface 103. Then, a conductive material 40 is filled in the through-hole 102. Since the insulating mask 30 has an opening 301 at a position corresponding to the through-hole 102, the conductive material 40 can enter the through-hole 102 through the opening 301 of the insulating mask 30. At the same time, since the insulating mask 30 covers the first surface 101, the conductive material 40 can be prevented from being formed on the first surface 101. Therefore, during the process of filling the through-hole 102 of the substrate 10, the metal present on the surface of the substrate 10 can be reduced, thereby reducing the impact on the production of the conductive circuit.
[0089] In one design, step 102 may be further performed before step 402 .
[0090] In one design, after step 402 , step 104 may also be performed.
[0091] The present application also provides a substrate 10 , which is manufactured using any of the through-hole 102 filling methods provided in the above specific embodiments.
[0092] The present application also provides an electronic device, including a substrate 10, which is manufactured using any of the methods for manufacturing substrates 10 provided in the above specific embodiments. The substrate 10 provided in the present application is applicable to common electronic devices on the market, for example, electronic devices can be terminal devices such as consumer electronic products (computers, etc.), communication electronic products, medical devices, automotive electronics, smart electronic products, etc. The electronic devices can also be semi-finished devices, etc., without specific limitation here.
[0093] The above examples are for the purpose of illustrating the embodiments disclosed in the present application and are not to be construed as limiting the present application. In addition, the various modifications listed herein and the variations of the methods and compositions in the application will be apparent to those skilled in the art without departing from the scope and spirit of the present application. Although the present application has been specifically described with reference to various specific preferred embodiments of the present application, it should be understood that the present application should not be limited to these specific embodiments. In fact, various modifications apparent to those skilled in the art as above to obtain applications should be included within the scope of the present application.
Claims
1. A method for filling a hole in a substrate, characterized in that: The method comprises: Providing a substrate having a first surface and a through hole passing through the substrate; forming an insulating mask on the first surface, wherein the insulating mask has an opening, and the opening exposes the through hole; Filling the through-hole with a conductive material.
2. The method according to claim 1, characterized in that The method further comprises: The insulating mask is removed.
3. The method according to claim 1, characterized in that Before forming the insulating mask on the first surface, the method further includes: A conductive layer is formed on the first surface, wherein the conductive layer is located between the first surface and the insulating mask.
4. The method according to claim 3, characterized in that The conductive layer is formed by PVD, or the conductive layer includes an insulating substrate and a metal layer formed on the insulating substrate.
5. The method according to claim 1, wherein An insulating mask is formed on the first surface, wherein the insulating mask has an opening, and the opening exposes the through hole, comprising: forming an insulating mask on the first surface; An opening is formed in the insulating mask, wherein the opening exposes the through hole.
6. The method according to any one of claims 1 to 5, characterized in that The substrate further includes a second surface opposite to the first surface, an insulating mask is formed on the first surface, the insulating mask has an opening, and after the opening exposes the through hole, the method further includes: An insulating mask is formed on the second surface, wherein the insulating mask has an opening, and the opening exposes the through hole.
7. The method according to claim 6, characterized in that The process of forming the insulating mask on the first surface and the second surface is completed in the same process.
8. The method according to any one of claims 1 to 5, characterized in that Filling the through hole with a conductive material comprises: The substrate formed with the insulating mask is immersed in a solution containing conductive ions, and the conductive ions are reduced to conductive elements through a chemical reaction and then filled into the through holes.
9. A method for filling holes in a substrate, characterized in that: The method comprises: Providing a substrate having a first surface and a second surface opposite to each other; forming an insulating mask on the first surface, wherein the insulating mask has an opening; forming a through hole on the substrate at a position corresponding to the opening, wherein the through hole passes through the first surface and the second surface; Filling the through-hole with a conductive material.
10. A substrate, characterized in that: The substrate is manufactured by using the hole filling method according to any one of claims 1 to 8 or claim 9.
11. An electronic device, characterized in that: The electronic device includes the substrate according to claim 10 .