Laser fuse structure and manufacturing method thereof

Abstract

The invention discloses a laser fuse structure and a manufacturing method thereof. The method comprises the following steps: providing a substrate; forming a fuse metal layer on the substrate, wherein the fuse metal layer comprises a lead part and a fusing part; a first dielectric layer covering the fuse metal layer is formed, and a protruding part located above the fusing part is formed on the upper surface of the first dielectric layer; forming an etching stop layer covering the convex part; forming a second dielectric layer covering the first dielectric layer and the etching stop layer; forming a top metal layer over the second dielectric layer; forming a third dielectric layer covering the top metal layer; and performing an etching process on the third dielectric layer and the second dielectric layer to form an opening for exposing the etching stop layer, and the middle of the bottom of the opening is raised. The laser fuse structure has a higher fusing success rate and a higher yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a laser fuse structure and a manufacturing method thereof. Background Art

[0002] Fuses are key components in electronic products. They control redundant memory switching, are used in radio frequency (RF) circuits to provide adjustable resistance and capacitance characteristics (RC trimming), and are commonly used in security codes or low-bit count electronic labels for data storage.

[0003] There are three main types of traditional laser fuses: metal fuses (Metal Fuse) and polysilicon fuses (Poly Fuse) that are blown with high current, or metal fuses (Laser Fuse) that are blown with lasers. The principle of a fuse is that it is normally conductive, but when a high current or laser irradiation is applied, it melts, thus breaking the circuit and enabling data storage and encoding. Existing commercially available metal fuses or polysilicon fuses that are blown with high current require a relatively high current to blow, which is limited by the design of the burning equipment and pins. Metal fuses that are blown with lasers typically use the previous metal layer (TM-1) of the top metal (TM) as the laser fuse. However, due to the uneven thickness of the residual oxide layer above the fuse, the fuse yield is low, which greatly limits the application of laser fuses. Summary of the Invention

[0004] The Summary of the Invention introduces a series of simplified concepts that will be further described in the Detailed Description of the Invention. The Summary of the Invention is not intended to limit the key features and essential features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0005] In order to solve the existing problems, an embodiment of the present invention provides a method for manufacturing a laser fuse structure, the method comprising:

[0006] providing a substrate;

[0007] forming a fuse metal layer on the substrate, wherein the fuse metal layer includes a lead portion and a fuse portion, wherein the lead portion and the fuse portion are arranged along a first direction;

[0008] forming a first dielectric layer covering the fuse metal layer, wherein a protrusion located above the fuse portion is formed on an upper surface of the first dielectric layer in a second direction, the second direction intersecting the first direction;

[0009] forming an etch stop layer covering the protrusion;

[0010] forming a second dielectric layer covering the first dielectric layer and the etch stop layer;

[0011] forming a top metal layer on the second dielectric layer, wherein the top metal layer is electrically connected to the lead portion;

[0012] forming a third dielectric layer covering the top metal layer;

[0013] The third dielectric layer and the second dielectric layer are sequentially etched to form an opening exposing the etch stop layer, wherein the bottom of the opening is convex in the middle along the second direction.

[0014] In one embodiment, forming a first dielectric layer covering the fuse metal layer includes:

[0015] The first dielectric layer is deposited by a conformal deposition process to form the protrusion above the fuse.

[0016] In one embodiment, a size of the bottom of the opening along the first direction is larger than a size of the etch stop layer along the first direction, and the bottom of the opening exposes the first dielectric layer located on both sides of the etch stop layer;

[0017] After forming the opening, the method further includes:

[0018] Etching the first dielectric layer exposed at the bottom of the opening so that the bottom of the opening is raised in the middle along the first direction;

[0019] The etch stop layer is removed.

[0020] In one embodiment, after removing the etch stop layer, the method further comprises:

[0021] The bottom of the opening is rounded, and the rounding process includes etching and / or high-temperature treatment.

[0022] In one embodiment, a dimension of the bottom of the opening along the second direction is not less than a dimension of the etch stop layer along the second direction.

[0023] In one embodiment, forming an etch stop layer covering the raised portion includes:

[0024] forming an etch stop layer material on the first dielectric layer;

[0025] forming a mask layer on the etch stop layer material and located above the protrusion;

[0026] The etch stop layer material is etched based on the mask layer to obtain the etch stop layer covering the protrusion.

[0027] In one embodiment, the first dielectric layer includes at least two layers, and the refractive index of the at least two first dielectric layers increases sequentially from bottom to top.

[0028] In one embodiment, after forming the second dielectric layer and before forming the top metal layer, the method further includes:

[0029] A conductive column is formed penetrating the second dielectric layer and the first dielectric layer, and the top metal layer is electrically connected to the lead portion through the conductive column.

[0030] In one embodiment, the width of the top of the opening is greater than the width of the bottom of the opening.

[0031] Another aspect of an embodiment of the present invention provides a laser fuse structure, which is manufactured using the above method.

[0032] An embodiment of the present invention further provides an electronic device, which includes the above-mentioned laser fuse structure.

[0033] According to the laser fuse structure and manufacturing method provided by the embodiment of the present invention, a raised portion located above the fuse portion is formed on the surface of the first dielectric layer, so that the middle bottom of the opening is raised to form a lens structure, thereby improving the success rate of laser fuse writing and further improving the yield of the laser fuse structure; an etch stop layer is formed on the raised portion, which can accurately control the etching depth of the opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The following drawings of the present invention are incorporated herein as part of the present invention for understanding the present invention. The drawings show embodiments of the present invention and the description thereof is used to explain the principle of the present invention.

[0035] In the attached figure:

[0036] Figure 1A-1E A cross-sectional schematic diagram of a laser fuse structure obtained by sequentially implementing various steps according to a method for manufacturing a laser fuse structure in the related art is shown;

[0037] Figure 2 A schematic flow chart showing a method for manufacturing a laser fuse structure according to a specific embodiment of the present invention;

[0038] Figure 3A-Figure 3L The cross-sectional schematic diagram shows a laser fuse structure obtained by sequentially performing various steps in a method for manufacturing a laser fuse structure according to a specific embodiment of the present invention. DETAILED DESCRIPTION

[0039] In the following description, numerous specific details are provided to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced without one or more of these details. In other instances, certain technical features well known in the art are not described to avoid confusion with the present invention.

[0040] It should be understood that the present invention can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals throughout represent like elements.

[0041] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, a first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part without departing from the teachings of the present invention.

[0042] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0043] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present invention. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0044] like Figure 1A-1E As shown, the manufacturing method of the laser fuse structure in the related art includes: Figure 1A As shown, a fuse metal layer 101 is formed on a substrate 100; Figure 1B As shown, a first dielectric layer 102 covering the fuse metal layer 101 is formed; Figure 1C As shown, a top metal layer 103 is formed on the first dielectric layer 102; Figure 1D As shown, a second dielectric layer 104 and a passivation layer 105 covering the top metal layer 103 are formed on the first dielectric layer 102; finally, as shown Figure 1E As shown, the passivation layer 105 , the second dielectric layer 104 and the first dielectric layer 102 are etched to form an opening.

[0045] The fuse metal layer 101 is typically the front metal layer (TM-1) of the top metal layer. When a laser is irradiated through an opening, the fuse metal layer 101 can be melted. When forming the opening, the passivation layer and dielectric layer that need to be etched are relatively thick. The remaining dielectric layer thickness below the opening is difficult to control, which can easily affect the yield of the laser fuse structure.

[0046] In view of the existence of the above technical problems, the embodiment of the present invention proposes a laser fuse structure and a manufacturing method thereof. Figures 2 to 3A to Figure 3L The method for preparing the laser fuse structure according to the embodiment of the present invention is described in detail, wherein: Figure 2 A schematic flow chart showing a method for manufacturing a laser fuse structure according to a specific embodiment of the present invention is shown. Figures 3A to 3L A cross-sectional view of a device obtained during the implementation of a method for manufacturing a laser fuse structure according to a specific embodiment of the present invention is shown.

[0047] First, execute step S201, as Figure 3A As shown, a substrate 300 is provided.

[0048] Exemplarily, substrate 300 includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. The semiconductor substrate may be made of, but is not limited to, at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III / V compound semiconductors, or may be silicon-on-insulator (SOI), stacked silicon-on-insulator (SSOI), stacked silicon germanium-on-insulator (S-SiGeOI), silicon germanium-on-insulator (SiGeOI), or germanium-on-insulator (GeOI). One or more active or passive devices may be formed in the semiconductor substrate. Active devices may include transistors, diodes, and other known active devices, while passive devices may include resistors, capacitors, inductors, and other known passive devices. The interconnect layer includes an interlayer dielectric layer and a metal interconnect structure formed in the interlayer dielectric layer. The metal interconnect structure is a stack of alternating metal layers and vias, used to provide the required electrical connections between devices.

[0049] Next, step S202 is performed to form a fuse metal layer 301 on the substrate 300. The fuse metal layer 301 includes a lead portion and a fuse portion. The lead portion and the fuse portion are arranged along a first direction.

[0050] The fuse metal layer 301 can be a front metal layer (TM-1) of the top metal layer (TM). Its thickness is relatively thin, which facilitates laser fusing. Exemplarily, the thickness of the fuse metal layer 301 is between 1000 angstroms and 6000 angstroms. The material of the fuse metal layer 301 can include copper, a copper alloy, aluminum, or an aluminum alloy.

[0051] like Figure 3B As shown in the figure, the first direction is the x-direction shown in the figure, and the fuse metal layer 301 includes a lead portion 301B and a fusible portion 301A arranged along the x-direction. The width of the fusible portion 301A in the second direction (i.e., the y-direction shown in the figure) is smaller than the width of the lead portion in the y-direction, so that the fusible portion 301A is more easily fused when irradiated by laser. Figure 3A 、 Figure 3C-Figure 3I Shown is Figure 3B The cross-sectional view along the y direction at the position indicated by the dotted line, Figure 3J 、 Figure 3K and Figure 3L Shown is Figure 3B Cross-section along the x-direction.

[0052] For example, an etching process can be used to form the fuse metal layer 301. Specifically, a metal material layer is first deposited on the substrate 300, and then a patterned photoresist layer is formed on the metal material layer. The metal material layer is etched using the photoresist layer as a mask to form the fuse metal layer 301. Alternatively, a lift-off process can be used to form the fuse metal layer 301. That is, a photoresist layer having an opening is first formed on the substrate 300, and then a metal material layer is deposited to fill the opening in the photoresist layer. Finally, a solvent is used to dissolve the photoresist layer, and the photoresist layer and the metal material layer thereon are lift-offed together, leaving the metal material layer at the opening, i.e., the fuse metal layer 301.

[0053] Next, step S203 is performed to form a first dielectric layer 302 covering the fuse metal layer 301. A protrusion 303 located above the fuse portion 301A is formed on the upper surface of the first dielectric layer 302 in the second direction, and the second direction intersects the first direction. Figure 3C As shown. Among them, the second direction is Figure 3B The y direction is shown, and exemplarily, the second direction is perpendicular to the first direction.

[0054] In one embodiment, a conformal deposition process can be used to deposit the first dielectric layer 302 to form a raised portion 303 above the fuse portion 301A. A conformal deposition process refers to a deposition process that can evenly cover a material surface with a thin film. The film formed has a consistent thickness and can conform to the three-dimensional morphology of the underlying material. Because the fuse metal layer 301 below the deposited first dielectric layer 302 protrudes from the surface of the substrate 300, the portion of the first dielectric layer 302 located above the fuse metal layer 301 is higher than the portion located above the substrate 300, thereby forming a raised portion 303 above the fuse metal layer 301.

[0055] Typically, after depositing a dielectric layer covering the fuse metal layer, a planarization process is performed to flatten the dielectric layer surface. In contrast, in the embodiment of the present invention, after depositing the first dielectric layer 302, no planarization process is required, and the raised portion above the fuse metal layer is retained to form the lens structure.

[0056] In some embodiments, after forming the first dielectric layer 302 , the surface of the first dielectric layer 302 may be further etched to form a protrusion.

[0057] In some embodiments, after performing the first deposition process to form the main portion of the first dielectric layer 302 , a second deposition process may be performed to form the protrusion 303 above the fuse portion 301A.

[0058] For example, the first dielectric layer 302 can be formed by a deposition process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). For example, the material of the first dielectric layer 302 includes, but is not limited to, one or more of SiC, SiOC, SiO2, SiCN, SiOCH, SiC, SiN, and SiON.

[0059] In some embodiments, the first dielectric layer 302 includes at least two layers, and the refractive index of the at least two first dielectric layers 302 increases from bottom to top to improve the light focusing property of the first dielectric layer 302 and further improve the fusing efficiency of the fuse metal layer 301 .

[0060] The at least two first dielectric layers 302 may be made of different materials. For example, the first dielectric layer may include a silicon oxide layer and a silicon nitride layer or a silicon oxynitride layer stacked in sequence, wherein the refractive index of the silicon nitride or silicon oxynitride is higher than that of the silicon oxide. Alternatively, the at least two first dielectric layers 302 may have different doping concentrations. For example, the first dielectric layer 302 may be a silicon oxide layer with a gradually increasing nitrogen doping concentration, thereby gradually increasing the refractive index of the first dielectric layer 302. Alternatively, the at least two first dielectric layers may have different densities. For example, the density of the first dielectric layer 302 may gradually increase from bottom to top, thereby causing the upper first dielectric layer to have a higher refractive index.

[0061] Then, execute step S204, as shown in FIG. Figure 3D As shown, an etch stop layer 304 is formed to cover the protrusion 303 .

[0062] The material of the etch stop layer 304 is different from that of the first dielectric layer 302. For example, the etch stop layer 304 may be one of silicon nitride, silicon oxynitride, silicon carbide, and NDC (nitrogen doped carbide).

[0063] For example, a deposition process is first used to deposit an etch-stop layer material on the first dielectric layer 302. Next, a mask layer, such as a photoresist layer, is formed on the etch-stop layer material to be located above the protrusion 303. The etch-stop layer material is etched based on the mask layer, retaining the etch-stop layer material located above the fuse portion 301A and removing the remaining etch-stop layer material, thereby obtaining an etch-stop layer 304 that only covers the protrusion 303.

[0064] Illustratively, the thickness of the etch stop layer 304 is between 150 angstroms and 500 angstroms, and can be set according to actual needs.

[0065] Then, execute step S205, as shown in FIG. Figure 3E As shown, a second dielectric layer 305 is formed covering the first dielectric layer 302 and the etch stop layer 304 .

[0066] For example, the second dielectric layer 305 can be formed by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD). For example, the material of the second dielectric layer 305 includes, but is not limited to, one or more of SiC, SiOC, SiO2, SiCN, SiOCH, SiC, SiN, and SiON.

[0067] For example, the depth of the subsequently formed opening can be determined by adjusting the thickness of the first dielectric layer 302 and the second dielectric layer 305. When a deeper opening is required, the thickness of the first dielectric layer 302 can be reduced and the thickness of the second dielectric layer 305 can be increased.

[0068] For example, after depositing the second dielectric layer 305 , a planarization process (eg, a CMP process) may be performed to make the surface of the second dielectric layer 305 planar.

[0069] After forming the second dielectric layer 305, as shown in FIG. Figure 3J As shown, a conductive pillar 309 can also be formed through the second dielectric layer 305 and the first dielectric layer 302. The conductive pillar 309 is electrically connected to the lead portion 301B. Specifically, the second dielectric layer 305 and the first dielectric layer 302 are sequentially etched to form a through hole. Next, a conductive material is filled into the through hole to form the conductive pillar 309. The conductive material includes one of copper, aluminum, nickel, gold, silver, and titanium, and other suitable conductive materials may also be used.

[0070] Then, execute step S206, as Figure 3F As shown, a top metal layer 306 is formed on the second dielectric layer 305 , and the top metal layer 306 is electrically connected to the lead portion 301B.

[0071] For example, the top metal layer 306 is electrically connected to the lead portion 301B of the fuse metal layer 301 through a conductive pillar, so that the fuse metal layer 301 is electrically connected to a desired circuit through the top metal layer 306. The top metal layer 306 can be used to further form a bonding pad (PAD) for package bonding.

[0072] For example, the top metal layer 306 can be made of a commonly used metal material, such as aluminum, copper, gold, tungsten, tin, or alloys thereof. The thickness of the top metal layer 306 is greater than the thickness of the fuse metal layer 301. In one example, the thickness of the top metal layer 306 is greater than 6000 angstroms.

[0073] Then, execute step S207, as Figure 3GAs shown, a third dielectric layer 307 is formed covering the top metal layer 306. For example, the material of the third dielectric layer 307 includes, but is not limited to, one or more of SiC, SiOC, SiO2, SiCN, SiOCH, SiC, SiN, and SiON. The third dielectric layer 307 can be formed using processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

[0074] Since the third dielectric layer 307 is formed on the top metal layer 306, after the deposition process, a protrusion is formed on the surface of the third dielectric layer 307 above the top metal layer 306. Therefore, after the deposition of the third dielectric layer 307, a planarization process (such as a CMP process) may be performed to make the surface of the third dielectric layer 307 flat.

[0075] For example, a passivation layer 308 may be further formed on the third dielectric layer 307. The material of the passivation layer 308 includes but is not limited to silicon nitride.

[0076] Then, execute step S208, as Figure 3H As shown, the third dielectric layer 307 and the second dielectric layer 305 are etched to form an opening exposing the etch stop layer 304 .

[0077] In one embodiment, the width of the bottom of the opening along the second direction (y direction) is not less than the dimension of the etch stop layer 304 along the second direction, thereby completely exposing the etch stop layer 304 to facilitate subsequent removal of the etch stop layer 304 .

[0078] Specifically, a photoresist layer is first formed on the passivation layer 308. Using the photoresist layer as a mask, the passivation layer 308, the third dielectric layer 307, and the second dielectric layer 305 are sequentially etched to form an opening. The bottom of the opening has a convex shape. This morphology is equivalent to forming a lens structure above the fuse metal layer 301, which can produce a convergence effect on the laser irradiated in the opening, thereby improving the success rate of fusing the fuse metal layer 301. In addition, during the process of etching to form the opening, the presence of the etch stop layer 304 helps control the etching endpoint, so that the first dielectric layer 302 below the etch stop layer 304 has a uniform morphology, thereby improving the yield of the laser fuse structure.

[0079] For example, after etching to form the opening, the etch stop layer 304 may be removed, as shown in FIG. Figure 3I As shown. For example, a wet etching process can be used to remove the etch stop layer 304 to avoid damaging the underlying first dielectric layer 302. Alternatively, if the optical performance of the etch stop layer 304 meets the preset requirements, the etch stop layer 304 can also be retained.

[0080] like Figure 3JAs shown, the size of the bottom of the opening along the first direction (x direction) is larger than the size of the etch stop layer 304 along the first direction. In the x direction, the bottom of the opening exposes the first dielectric layer 302 on both sides of the etch stop layer 304. After the opening is formed, before the etch stop layer 304 is removed, as shown in FIG. Figure 3K As shown, the first dielectric layer 302 exposed at the bottom of the opening can be etched to remove portions of the first dielectric layer 302 on both sides of the etch stop layer 304, while the first dielectric layer 302 located in the middle of the opening is protected by the etch stop layer 304 and is not etched, thereby making the bottom of the opening convex in the middle along the first direction, which is more conducive to focusing light. Figure 3L As shown, the etch stop layer 304 is removed.

[0081] For example, after removing the etch stop layer 304, the bottom of the opening may be rounded to improve its optical performance. After the rounding, the bottom of the opening is in the shape of an arc with a convex center.

[0082] The rounding process includes etching and / or high-temperature treatment. For example, an isotropic etching process can be used to eliminate the sharp corners of the protrusion, resulting in the protrusion having rounded corners. The high-temperature treatment can cause surface migration of the first dielectric layer 302, thereby rounding the corners of the protrusion by minimizing the surface energy.

[0083] At this point, the process steps of the manufacturing method of the laser fuse structure according to the embodiment of the first aspect of the present invention have been completed. It can be understood that the manufacturing method of the laser fuse structure of this embodiment not only includes the above steps, but may also include other necessary steps before, during or after the above steps, which are all included in the scope of the manufacturing method of this embodiment.

[0084] According to the manufacturing method of the laser fuse structure provided by the embodiment of the present invention, a raised portion is formed on the surface of the first dielectric layer above the fuse portion, so that the middle of the bottom of the opening is raised to form a lens structure, thereby improving the success rate of laser fuse writing and further improving the yield of the laser fuse structure; an etch stop layer is formed on the raised portion, which can accurately control the etching depth of the opening.

[0085] An embodiment of the present invention further provides a laser fuse structure, which can be prepared by the method in the aforementioned embodiment.

[0086] The laser fuse structure of the present invention is introduced and described in detail below. It is worth mentioning that in order to avoid repetition, the same components and structures as those in the above embodiments are only briefly described. For detailed explanations and descriptions, please refer to the description in the first embodiment.

[0087] Specifically, if Figure 3IAs shown, the laser fuse structure of an embodiment of the present invention includes: a substrate 300; a fuse metal layer 301 located on the substrate 300, the fuse metal layer 301 including a lead portion 301B and a fuse portion 301A; a dielectric layer covering the fuse metal layer 301, the dielectric layer including a first dielectric layer 302, a second dielectric layer 305 and a third dielectric layer 307; a top metal layer 306 located in the dielectric layer; and an opening located in the dielectric layer, with a bottom middle portion of the opening being convex.

[0088] Furthermore, the bottom of the opening is in the shape of an arc with a convex center, thus having better optical performance.

[0089] Exemplarily, the dielectric layer located above the fusing portion 301A of the fuse metal layer 301 includes at least two layers, and the refractive indices of the at least two dielectric layers increase sequentially from bottom to top.

[0090] The bottom middle of the opening of the laser fuse structure of the embodiment of the present invention is raised to form a lens structure, thereby improving the success rate of laser fuse writing and further improving the yield of the laser fuse structure.

[0091] An embodiment of the present invention further provides an electronic device, comprising the aforementioned laser fuse structure, which can be manufactured according to the aforementioned method.

[0092] The electronic device of this embodiment can be any electronic product or device, such as a mobile phone, tablet computer, laptop computer, netbook, game console, television, VCD, DVD, navigation system, digital photo frame, camera, camcorder, voice recorder, MP3 player, MP4 player, PSP, or any other intermediate product including a circuit. The electronic device of this embodiment of the present invention, due to the use of the aforementioned semiconductor device, has improved performance.

[0093] The present invention has been described through the above-described embodiments. However, it should be understood that the above-described embodiments are for illustrative and illustrative purposes only and are not intended to limit the present invention to the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments and that various variations and modifications may be made based on the teachings of the present invention, all of which fall within the scope of the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for manufacturing a laser fuse structure, characterized in that: The method comprises: providing a substrate; forming a fuse metal layer on the substrate, wherein the fuse metal layer includes a lead portion and a fuse portion, wherein the lead portion and the fuse portion are arranged along a first direction; forming a first dielectric layer covering the fuse metal layer, wherein a protrusion located above the fuse portion is formed on an upper surface of the first dielectric layer in a second direction, the second direction intersecting the first direction; forming an etch stop layer covering the protrusion; forming a second dielectric layer covering the first dielectric layer and the etch stop layer; forming a top metal layer on the second dielectric layer, wherein the top metal layer is electrically connected to the lead portion; forming a third dielectric layer covering the top metal layer; The third dielectric layer and the second dielectric layer are sequentially etched to form an opening exposing the etch stop layer, wherein the bottom of the opening is convex in the middle along the second direction.

2. The manufacturing method according to claim 1, wherein The forming of a first dielectric layer covering the fuse metal layer comprises: The first dielectric layer is deposited by a conformal deposition process to form the protrusion above the fuse.

3. The manufacturing method according to claim 1, wherein: The size of the bottom of the opening along the first direction is larger than the size of the etch stop layer along the first direction, and the bottom of the opening exposes the first dielectric layer located on both sides of the etch stop layer; After forming the opening, the method further includes: Etching the first dielectric layer exposed at the bottom of the opening so that the bottom of the opening is raised in the middle along the first direction; The etch stop layer is removed.

4. The manufacturing method according to claim 3, wherein: After removing the etch stop layer, the method further comprises: The bottom of the opening is rounded, and the rounding process includes etching and / or high-temperature treatment.

5. The manufacturing method according to claim 1, wherein: A dimension of the bottom of the opening along the second direction is not less than a dimension of the etch stop layer along the second direction.

6. The manufacturing method according to claim 1, wherein: The forming of an etch stop layer covering the raised portion comprises: forming an etch stop layer material on the first dielectric layer; forming a mask layer on the etch stop layer material and located above the protrusion; The etch stop layer material is etched based on the mask layer to obtain the etch stop layer covering the protrusion.

7. The manufacturing method according to claim 1, wherein: The first dielectric layer includes at least two layers, and the refractive index of the at least two first dielectric layers increases sequentially from bottom to top.

8. The manufacturing method according to claim 1, wherein: After forming the second dielectric layer and before forming the top metal layer, the method further includes: A conductive column is formed penetrating the second dielectric layer and the first dielectric layer, and the top metal layer is electrically connected to the lead portion through the conductive column.

9. The manufacturing method according to claim 1, wherein: The width of the top of the opening is greater than the width of the bottom of the opening.

10. A laser fuse structure, characterized in that: The laser fuse structure is manufactured by the method according to any one of claims 1 to 9.

Images