Slotting device, semiconductor chip, and method for manufacturing semiconductor chip

Abstract

The grooving device (1) is provided with: a laser irradiation unit (12) that performs grooving processing; a rotating table (13h) that holds and rotates the wafer (We) when a protective film for protecting the circuit surface (We1) of the wafer (We) is formed; a rotation angle position detection unit (133h) for detecting the rotation angle position in the R direction of the wafer (We) held on the rotary table (13h); and a control unit (18) that performs control for adjusting the rotation angle position of the wafer (We) on the basis of the detection result of the rotation angle position detection unit (133h) and the target rotation angle position (P1).

Description

Technical Field

[0001] The invention relates to a slotting device, a semiconductor chip and a method for manufacturing the semiconductor chip. Background Art

[0002] Conventionally, there is a known slotting device. Such a slotting device is disclosed in, for example, Japanese Patent No. 5324180.

[0003] Japanese Patent No. 5324180 discloses a laser processing device comprising a laser processing unit (laser irradiation unit), a rotating stage (rotating stage), and a motor. The laser processing unit is configured to form grooves of a predetermined depth along predetermined dividing lines (streets) on a wafer using a laser, and then to cut the wafer along the predetermined dividing lines using a laser. The laser processing unit positions the wafer and then performs laser processing. This allows the wafer to be accurately cut (divided) along the predetermined dividing lines into multiple semiconductor chips.

[0004] The rotating table described in Japanese Patent No. 5324180 is configured to hold the wafer while coating it with resin, which protects the wafer's circuit surface from debris generated during laser processing. A motor is configured to rotate the rotating table. Thus, by rotating the wafer held on the rotating table using the motor, the resin is evenly distributed across the wafer's circuit surface due to centrifugal force. In the laser processing apparatus, after the resin is evenly distributed across the wafer's circuit surface, the wafer is transported to the laser processing unit for laser processing.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 5324180 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] However, although not explicitly described in Patent Document 1, in conventional laser processing apparatuses such as the aforementioned Japanese Patent Gazette No. 5324180, after a wafer having resin uniformly distributed over its circuit surface is transported to a laser processing unit, the wafer's rotational angle position is roughly positioned based on the rotational angle position of a notch or orientation plane provided on the wafer's outer periphery. Then, after the wafer's rotational angle position is roughly positioned, the wafer's alignment marks are detected. Thus, in the laser processing apparatus, laser processing is performed after the wafer's rotational angle position is adjusted based on the positions of the detected alignment marks. In conventional laser processing apparatuses, although laser processing of the wafer is performed after the laser processing unit adjusts the wafer's rotational angle position to an appropriate rotational angle position, the adjustment of the wafer's rotational angle position requires a relatively long time due to the rough positioning. Therefore, it is desirable to shorten the time required to adjust the wafer's rotational angle position.

[0010] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a grooving device, a semiconductor chip, and a method for manufacturing a semiconductor chip that can shorten the time required for adjusting the rotational angle position of a wafer.

[0011] Technical solutions to problems

[0012] The first aspect of the present invention provides a grooving device comprising: a laser irradiation unit for performing a grooving process, in which a laser is irradiated along the spacing paths between semiconductor chips on the circuit surface of the wafer to form grooves that divide the insulating film; a turntable for holding and rotating the wafer while forming a protective film, wherein the protective film protects the circuit surface of the wafer from being affected by residues generated during the grooving process performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the wafer held on the turntable in the rotation direction of the turntable; and a control unit for controlling the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction.

[0013] As described above, the notching device according to the first aspect of the present invention includes a control unit that controls the adjustment of the wafer's rotational angular position based on the detection results of the rotational angular position detection unit and the target rotational angular position in the wafer's rotational direction. Thus, by adjusting the wafer's rotational angular position, the laser irradiation unit can perform rough positioning of the wafer's rotational angular position to the same degree as rough positioning of the wafer's rotational angular position based on the rotational angular position of a notch or orientation flat provided on the wafer's outer circumference. As a result, the positions of the wafer's alignment marks can be determined based on the wafer positioned at the adjusted rotational angular position without detecting the notch or orientation flat, thereby shortening the time required to adjust the wafer's rotational angular position.

[0014] In the notching device according to the first aspect, the control unit is preferably configured to perform control such that, based on the detection result of the rotational angle position detection unit and the initial position of the wafer in the rotational direction, which serves as the target rotational angle position, when the wafer is held by the turntable, the release position, which serves as the rotational angle position of the wafer in the rotational direction when the turntable releases the wafer, is adjusted. With this configuration, by adjusting the wafer to the release position, the laser irradiation unit can perform rough positioning of the wafer's rotational angle position to the same degree as rough positioning of the wafer's rotational angle position based on the rotational angle position of a notch or orientation flat provided on the wafer's outer circumference. As a result, the positions of the wafer's alignment marks can be determined based on the wafer positioned at the release position without detecting the notch or orientation flat, thereby shortening the time required to adjust the wafer's rotational angle position.

[0015] In the notching device described above, in which the control unit is configured to perform control to adjust the release position based on the detection results of the rotational angle position detection unit and the initial position, the notching device is preferably configured to transport a wafer positioned at the release position based on the detection results of the rotational angle position detection unit and the initial position from the turntable to the laser irradiation unit while maintaining the rotational angle. With this configuration, the wafer can be transported to the laser irradiation unit while maintaining the rotational angle at the release position. Therefore, the positions of the wafer alignment marks can be determined based on the wafer maintaining the rotational angle at the release position without detecting notches or orientation flats in the laser irradiation unit. As a result, the time required to adjust the wafer's rotational angle position in the laser irradiation unit can be shortened.

[0016] In the slotting device described above, in which the control unit is configured to perform control to adjust the release position based on the detection results of the rotational angle position detection unit and the initial position, the slotting device preferably further includes a wafer receiving unit for receiving wafers, and the slotting device is configured to transfer the wafer, positioned at the release position based on the detection results of the rotational angle position detection unit and the initial position, from the turntable to the wafer receiving unit while maintaining the rotation angle. With this configuration, the wafer can be transferred to the wafer receiving unit while maintaining the rotation angle at the release position. Therefore, in the next step of the slotting device, the position of the wafer alignment mark can be determined based on the wafer maintaining the rotation angle at the release position without performing notch or orientation flat detection. As a result, the time required to adjust the wafer's rotational angle position in the next step of the slotting device can be shortened.

[0017] In the slotting device in which the control unit is configured to control the position at the time of release adjustment based on the detection result of the rotational angle position detection unit and the initial position, the control unit is preferably configured to control the position at the time of release adjustment to be consistent with the initial position based on the detection result of the rotational angle position detection unit and the initial position. With this configuration, the positioning accuracy of the wafer at the initial position and the positioning accuracy of the wafer at the time of release can be maintained at the same level. Therefore, if the positioning accuracy of the wafer in the process before the slotting device is high, the positioning accuracy of the wafer at the time of release can also be maintained at a high level.

[0018] In the slotting device described above, wherein the control unit is configured to perform control to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, the rotation angle position detection unit preferably includes an encoder that detects the rotation angle of the turntable, and the control unit is configured to perform control to adjust the release position based on the rotation angle and initial position of the turntable detected by the encoder. With this configuration, the encoder can be used to easily obtain the initial position of the wafer and adjust it to the release position, thereby easily realizing a slotting device capable of adjusting the wafer to the release position.

[0019] In this case, the turntable is preferably configured to hold and rotate the wafer while the protective film is removed and the circuit surface is dried after the grooving process by the laser irradiation unit, and the control unit is configured to control the rotational speed of the turntable during each of the protective film formation, protective film removal, and circuit surface drying after the protective film removal process based on the rotation angle of the turntable detected by the encoder. With this configuration, the encoder can not only determine the initial position of the wafer and adjust it to the release position, but also control the rotational speed of the turntable. This can reduce the number of components in the grooving device compared to using a separate sensor.

[0020] In the slotting device in which the control unit is configured to perform control to adjust the release position based on the detection results of the rotation angle position detection unit and the initial position, the control unit is preferably configured to control the rotation of the turntable from the rotation angle position at the completion of the operation to the release position after the operation including the formation of the protective film by rotating the wafer held by the turntable is completed. With this configuration, the wafer can be adjusted to the release position after an appropriate protective film is formed on the circuit surface of the wafer, thereby enabling both the formation of the protective film and the adjustment of the wafer to the release position to be performed appropriately.

[0021] In the grooving device of the first aspect mentioned above, it is preferred that the grooving device further includes a chuck table for grooving, and the chuck table for grooving adsorbs and holds the wafer transported by the transport mechanism during the grooving process performed by the laser irradiation unit, and rotates or moves the wafer horizontally, and the rotation angle position detection unit includes a shooting unit, which shoots the position reference portion provided on the outer periphery of the wafer by shooting the wafer held on the turntable, thereby detecting the rotation angle position of the wafer held on the turntable, and the control unit is configured to perform the following control: based on a pre-set target rotation angle position and an image of the wafer including the position reference portion shot by the shooting unit when the rotation of the turntable is completed, the rotation angle position is adjusted after the wafer is held by the chuck table for grooving. If constructed in this way, based on the image of the wafer, after the wafer is held by the grooving chuck table, the rotational angle position of the wafer is adjusted using the grooving chuck table, thereby being able to adjust the rotational angle position of the wafer based on the actual rotational angle position of the wafer, so that the wafer can be accurately adjusted to the pre-set target rotational angle position while being held on the grooving chuck table.

[0022] In the slotting device according to the first aspect, the slotting device preferably further comprises: a wafer receiving portion for receiving wafers; and a transport mechanism including a hand for sucking and holding the wafers, the transport mechanism being configured to transport the wafers held by the hand; a rotational angle position detection portion including an imaging portion that images a position reference portion provided on the outer periphery of the wafer by imaging the wafer held on the turntable, thereby detecting the rotational angle position of the wafer held on the turntable; and a control portion configured to perform control such that, based on a preset target rotational angle position and an image of the wafer including the position reference portion captured by the imaging portion after the turntable has completed rotation, the hand posture when receiving the wafer into the wafer receiving portion is adjusted, thereby adjusting the rotational angle position of the wafer. With this configuration, by adjusting the rotational angle position of the wafer by the hand based on the image of the wafer, the rotational angle position of the wafer can be adjusted based on the actual rotational angle position of the wafer, thereby accurately adjusting the wafer to the preset target rotational angle position and storing it in the wafer receiving portion.

[0023] In the slotting device of the first aspect described above, it is preferred that the slotting device further include a transport mechanism, the transport mechanism including a hand that absorbs and holds the wafer, the transport mechanism being configured to transport the wafer held by the hand, and the turntable including a rotating wafer holding table configured to absorb and hold the wafer transported by the transport mechanism and having a first recess formed therein into which the hand can be inserted. Here, the hand is inserted into the first recess, and the wafer is held by the rotating wafer holding table, so the posture of the hand when holding the wafer by the rotating wafer holding table is pre-set. Therefore, since the hand holds the wafer in a certain posture, the wafer held by the hand is also maintained in a certain posture. As a result, the hand can transport the wafer while maintaining the rotation angle of the position at the time of release.

[0024] In this case, the grooving device preferably further includes a grooving chuck table. During grooving processing by the laser irradiation unit, the grooving chuck table suctions and holds the wafer being transported by the transport mechanism, while rotating or moving the wafer horizontally. The grooving chuck table includes a grooving wafer holding table having a second recess formed therein. Here, since the hand is inserted into the second recess to hold the wafer by the grooving chuck table, the hand's posture when holding the wafer by the grooving chuck table is pre-set. Therefore, since the wafer is transported from the hand to the grooving chuck table in a predetermined posture, the grooving chuck table can hold the wafer while maintaining the rotation angle of the release position.

[0025] In the aforementioned notching device having a transport mechanism including a hand, the notching device preferably further includes a temporary placement table for sucking and holding the wafer being transported by the transport mechanism after notching by the laser irradiation unit and before removing the protective film from the circuit surface of the wafer. The temporary placement table includes a temporary placement wafer holding table having a third recess formed therein. Since the hand is inserted into the third recess to hold the wafer using the temporary placement table, the hand's posture when holding the wafer using the temporary placement table is pre-set. Therefore, since the wafer is transported from the hand to the temporary placement table in a predetermined posture, the wafer can be held on the temporary placement table while maintaining the rotation angle at the position at which it was released.

[0026] In the grooving device of the first aspect mentioned above, it is preferred that the grooving device further includes a circuit surface protection cleaning section, which is provided with a rotating table for forming a protective film on the circuit surface of the wafer, removing the protective film and drying the protective film. The circuit surface protection cleaning section includes: a resin coating nozzle for coating a water-soluble resin on the circuit surface of the wafer to form a protective film; a cleaning nozzle for supplying cleaning water for removing the water-soluble resin coated by the resin coating nozzle to the circuit surface of the wafer; and a drying nozzle for blowing warm air to dry the circuit surface of the wafer. The resin coating nozzle, the cleaning nozzle and the drying nozzle are respectively constructed to be able to rotate independently of each other. Here, if the resin coating nozzle, the cleaning nozzle, and the drying nozzle rotate integrally, for example, when applying a water-soluble resin using the resin coating nozzle, the cleaning nozzle and the drying nozzle rotate together, and thus the water-soluble resin may adhere to the cleaning nozzle and the drying nozzle. It is also believed that residual liquid may drip from the cleaning nozzle and adhere to other nozzles during resin coating or drying, or residual liquid may drip from the resin coating nozzle and adhere to other nozzles during cleaning or drying. In contrast, by configuring the resin coating nozzle, the cleaning nozzle, and the drying nozzle to rotate independently of each other, it is possible to suppress the water-soluble resin applied from the resin coating nozzle from adhering to the cleaning nozzle and the drying nozzle, the residual liquid from the cleaning nozzle from adhering to the resin coating nozzle during resin coating or drying, and the residual liquid from adhering to the resin coating nozzle during cleaning or drying.

[0027] In this case, the groove forming apparatus preferably further includes: a first rotating mechanism for rotating the resin coating nozzle to either a coating position for coating the circuit surface of the wafer with a water-soluble resin or a first retracted position for retracting the resin coating nozzle from the coating position; a second rotating mechanism for rotating the cleaning nozzle to either a supply position for supplying cleaning water to the circuit surface of the wafer or a second retracted position for retracting the cleaning nozzle from the supply position; and a third rotating mechanism for rotating the drying nozzle to either a supply position for blowing warm air onto the circuit surface of the wafer or a third retracted position for retracting the drying nozzle from the supply position. With this configuration, it is easy to realize a structure in which the resin coating nozzle, the cleaning nozzle, and the drying nozzle can be independently rotated.

[0028] The semiconductor chip of the second aspect of the present invention is manufactured by a grooving device, which includes: a laser irradiation unit for performing a grooving process, in which a laser is irradiated along the spacing between the semiconductor chips on the circuit surface of the wafer to form a groove that divides the insulating film; a turntable for holding and rotating the wafer when a protective film is formed, and the protective film protects the circuit surface of the wafer from the influence of residues generated during the grooving process performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the wafer held on the turntable in the rotation direction of the turntable; and a control unit for adjusting the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction.

[0029] In the second aspect of the present invention, as described above, the semiconductor chip is manufactured using a notching device equipped with a control unit that controls the adjustment of the wafer's rotational angular position based on the detection results of the rotational angular position detection unit and the wafer's target rotational angular position in the rotational direction. Thus, by adjusting the wafer's rotational angular position, the laser irradiation unit can perform rough positioning of the wafer's rotational angular position to the same degree as rough positioning of the wafer's rotational angular position based on the rotational angular position of a notch or orientation flat provided on the wafer's outer circumference. As a result, the positions of the wafer's alignment marks can be determined based on the wafer positioned at the adjusted rotational angular position without detecting the notch or orientation flat. This allows for a semiconductor chip that can reduce the time required to adjust the wafer's rotational angular position.

[0030] The third aspect of the present invention relates to a method for manufacturing a semiconductor chip, including: a step of adjusting the rotational angle position of a wafer based on a detection result of a rotational angle position detection unit and a target rotational angle position of the wafer in the rotational direction, the rotational angle position detection unit being used to detect the rotational angle position of a wafer held on a turntable in the rotational direction of the turntable, the turntable holding and rotating the wafer while forming a protective film, the protective film protecting the circuit surface of the wafer from the influence of residues generated during the grooving process performed by the laser irradiation unit; a step of irradiating a plurality of spacing lanes of a wafer on which a plurality of semiconductor chips are provided; and a step of dividing the wafer into a plurality of semiconductor chips along the plurality of spacing lanes by expanding a sheet member using an expansion unit.

[0031] In the semiconductor chip manufacturing method according to the third aspect of the present invention, as described above, a step is provided for adjusting the rotational angular position of the wafer based on the detection results of the rotational angular position detection unit and the target rotational angular position in the rotational direction of the wafer. Thus, by adjusting the rotational angular position of the wafer, the laser irradiation unit can perform rough positioning of the rotational angular position of the wafer to the same degree as rough positioning of the rotational angular position of the wafer based on the rotational angular position of a notch or orientation flat provided on the outer circumference of the wafer. As a result, the position of the wafer alignment mark can be determined based on the wafer positioned at the adjusted rotational angular position without detecting the notch or orientation flat, thereby providing a semiconductor chip manufacturing method that can shorten the time required to adjust the rotational angular position of the wafer.

[0032] Effects of the Invention

[0033] According to the present invention, as described above, the time required for adjusting the rotational angle position of the wafer can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram showing an overview of a semiconductor wafer processing system provided with a dicing device and an expanding device according to the present embodiment.

[0035] Figure 2 This is a plan view showing a grooving device of a semiconductor wafer processing system according to the present embodiment.

[0036] Figure 3 It is a top view showing a tape applying device of the semiconductor wafer processing system according to the present embodiment.

[0037] Figure 4 This is a plan view showing a dicing device of a semiconductor wafer processing system according to the present embodiment.

[0038] Figure 5 It is a plan view showing a grinding device of the semiconductor wafer processing system according to the present embodiment.

[0039] Figure 6 This is a plan view showing a tape replacing and sticking device of the semiconductor wafer processing system according to the present embodiment.

[0040] Figure 7 This is a side view showing a tape replacing and pasting device of the semiconductor wafer processing system according to the present embodiment.

[0041] Figure 8 It is a plan view showing an expansion device of the semiconductor wafer processing system according to the present embodiment.

[0042] Figure 9 It is a side view showing an expansion device of the semiconductor wafer processing system according to the present embodiment.

[0043] Figure 10 1 is a flowchart showing a semiconductor chip manufacturing process of the semiconductor wafer processing system according to the present embodiment.

[0044] Figure 11 This is a plan view showing the notch and alignment mark of the wafer according to this embodiment.

[0045] Figure 12 Schematic diagram showing a wafer current supply device located upstream of the groove forming device and a tape applying device located downstream of the groove forming device according to the present embodiment.

[0046] Figure 13 It is a detailed top view of the grooving device according to this embodiment.

[0047] Figure 14 This is a plan view showing the circuit surface film cleaning section of the groove forming device according to this embodiment.

[0048] Figure 15 This is a side view showing a state in which the rotary wafer holding table of the circuit surface film cleaning section of the groove forming apparatus according to the present embodiment is moved to a coating and cleaning height position.

[0049] Figure 16 This is a side view showing a state in which the rotary wafer holding table of the circuit surface film cleaning section of the groove forming apparatus according to the present embodiment is moved to the loading and unloading height position.

[0050] Figure 17 This is a plan view showing a state in which a wafer is conveyed to a turntable by a U-shaped hand of the grooving device according to this embodiment.

[0051] Figure 18 This is a plan view showing a state in which a wafer is conveyed to a laser irradiation section by a U-shaped hand of the grooving device according to this embodiment.

[0052] Figure 19 It is a plan view showing the initial position of the wafer on the turntable of the grooving apparatus according to the present embodiment.

[0053] Figure 20 It is a plan view showing the position of the wafer when it is released from the turntable of the grooving device according to the present embodiment.

[0054] Figure 21 It is a plan view showing the position of the wafer on the turntable of the groove forming apparatus according to the present embodiment when the coating is completed.

[0055] Figure 22 It is a plan view showing the position of the wafer on the turntable of the groove forming apparatus according to the present embodiment when drying is completed.

[0056] Figure 23This is a schematic diagram showing a setting screen for rotation control of the grooving device according to the present embodiment.

[0057] Figure 24 Graph showing the relationship between time, speed, and total rotation angle in the coating and drying steps of the groove forming apparatus according to this embodiment. Graph showing the position of the wafer on the turntable at the completion of drying.

[0058] Figure 25 This is a graph showing the relationship between time, speed, and total rotation angle in the cleaning and drying process of the groove forming apparatus according to this embodiment. This is a top view showing the position of the wafer on the turntable when drying is completed.

[0059] Figure 26 This is a flowchart showing the release-time position adjustment process in the control unit of the grooving device according to the present embodiment.

[0060] Figure 27 It is a top view showing a grooving device according to a modified example of the present embodiment.

[0061] Figure 28 This is a plan view showing a state in which a wafer is taken out (or accommodated) by a U-shaped hand in a cassette portion in a grooving device according to a modified example of the present embodiment.

[0062] Figure 29 This is a plan view showing a state in which a wafer is transferred to (or held on) a turntable by a U-shaped hand in a groove forming apparatus according to a modified example of the present embodiment.

[0063] Figure 30 This is a plan view showing a state in which a wafer is transferred to (or held on) a chuck table for grooving by a U-shaped hand in a grooving device according to a modified example of the present embodiment. DETAILED DESCRIPTION

[0064] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0065] Reference Figures 1 to 26 , the structure of the semiconductor wafer processing system 100 according to the embodiment of the present invention is described.

[0066] (Semiconductor wafer processing system)

[0067] like Figure 1As shown, the semiconductor wafer processing system 100 is a device for processing a wafer We. The semiconductor wafer processing system 100 is configured to form a modified portion on the wafer We and to divide the wafer We along the modified portion to form a plurality of semiconductor chips Ch. Here, the wafer We is a circular thin plate formed by crystals of a semiconductor substance that becomes the material of a semiconductor integrated circuit. Inside the wafer We, a modified portion is formed by internal modification along a dividing line through processing in the semiconductor wafer processing system 100. That is, the wafer We is processed so that it can be divided along the dividing line. Here, the modified portion refers to cracks and gaps formed inside the wafer We by the laser Ld.

[0068] Specifically, the semiconductor wafer processing system 100 includes a grooving device 1 , a tape applying device 2 , a dicing device 3 , a grinding device 4 , a tape replacing and applying device 5 , and an expanding device 6 .

[0069] like Figure 1 As shown, in the semiconductor wafer processing system 100 , the wafer We is processed in the order of a slotting device 1 , a tape attaching device 2 , a dicing device 3 , a grinding device 4 , a tape replacing and attaching device 5 , and an expanding device 6 .

[0070] Grooving device

[0071] The slotting device 1 is configured to irradiate the insulating film and the inspection pattern by irradiating the insulating film and the inspection pattern along the spacing streets Ws between the semiconductor chips Ch on the circuit surface We1 of the wafer We, which is not equipped with the frame Rf and the protective tape Tb, before the modified portion is formed on the wafer We by the cutting device 3. Here, the laser light Lg is light with a wavelength shorter than that in the infrared region. The insulating film refers to the interlayer insulating film of the wafer We. The insulating film is formed of a low-k material with a relatively low dielectric constant as the interlayer insulating film material. The inspection pattern refers to a test continuity pattern used to perform a continuity test on the semiconductor chips Ch on the wafer We. The inspection pattern is the so-called Teg (Test Element Group).

[0072] Specifically, if Figure 2As shown, the grooving device 1 includes a box portion 11, a laser irradiation portion 12, and a circuit surface coating cleaning portion 13. The box portion 11 is configured to accommodate a wafer We to which a frame Rf and a protective tape Tb are not installed. The laser irradiation portion 12 is configured to irradiate a laser Lg that separates the insulating film and the inspection pattern of the wafer We. The circuit surface coating cleaning portion 13 is configured to coat the circuit surface We1 of the wafer We before separating the insulating film and the inspection pattern, and to clean the circuit surface We1 of the wafer We after separating the insulating film and the inspection pattern. It should be noted that the box portion 11 is an example of a "wafer housing portion" within the scope of protection claimed. The circuit surface coating cleaning portion 13 is an example of a "circuit surface protection cleaning portion" within the scope of protection claimed.

[0073] 〈With adhesive device〉

[0074] The tape sticking device 2 is configured to stick the protective tape Tb to the circuit surface We1 of the wafer We (see Figure 1 ).

[0075] Specifically, if Figure 3 As shown, the tape applying device 2 includes a cassette storage unit 21, a robot 22, a conveying mechanism 23, and a protective tape applying unit 24. The cassette storage unit 21 is configured to accommodate frames Rf, wafers We, and wafers We with frames Rf. The robot 22 is configured to transport frames Rf and wafers We from the cassette storage unit 21 to the conveying mechanism 23, respectively. The robot 22 is configured to transport wafers We with frames Rf from the conveying mechanism 23 to the cassette storage unit 21. The conveying mechanism 23 is configured to transport wafers We to a position of the protective tape applying unit 24 where protective tape Tb can be applied. The protective tape applying unit 24 is configured to apply protective tape Tb to wafers We conveyed by the conveying mechanism 23 and to apply frames Rf to protective tape Tb.

[0076] Cutting device

[0077] The dicing device 3 is configured to form a modified portion for dividing the wafer We inside the wafer We (see Figure 1 ).

[0078] Specifically, if Figure 4 As shown, the cutting device 3 includes a cutting unit 30, a box unit 31, and a wafer conveying unit 32. The cutting unit 30 is configured to irradiate the wafer We with a laser beam Ld having a wavelength that is transparent to the wafer We along the streets Ws (dividing lines). Figure 1 ) to form a modified portion. Here, the laser light Ld has a wavelength in the near-infrared region. The cassette 31 is configured to accommodate multiple wafers We attached to protective tape Tb along with frames Rf. The wafer transport unit 32 is configured to transport the wafers We attached to protective tape Tb along with frames Rf between the cassette 31 and the dicing unit 30.

[0079] Grinding device

[0080] The grinding device 4 is configured to remove the modified portion of the wafer We formed in the dicing device 3 by grinding the wafer We from the surface opposite to the circuit surface side (see Figure 1 ).

[0081] Specifically, if Figure 5 As shown, the grinding device 4 includes a first cassette 41 , a robot 42 , a plurality of suction holding units 43 , a plurality of grinding units 44 , a fine grinding unit 45 , a crystal defect forming unit 46 , a second cassette 47 , and a single rotary table 48 .

[0082] The first cassette 41 is configured to accommodate wafers We on which modified portions have been formed in the dicing device 3. The robot 42 is configured to transport the wafers We, attached to the protective tape Tb along with the frames Rf, from the first cassette 41 to the suction holding unit 43 closest to the first cassette 41 among the multiple suction holding units 43. Furthermore, the robot 42 is configured to transport the wafers We, attached to the protective tape Tb along with the frames Rf after the modified portions have been removed, from the suction holding unit 43 closest to the second cassette 47 among the multiple suction holding units 43 to the second cassette 47. The multiple suction holding units 43 are configured to suction and hold the wafers We attached to the protective tape Tb along with the frames Rf.

[0083] The plurality of grinding sections 44 are configured to perform step-by-step grinding on the back side of the wafer We opposite the circuit surface We1. The plurality of grinding sections 44 include a rough grinding section 44a, a fine grinding section 44b, and a precision (fine) grinding section 44c. The rough grinding section 44a is configured to grind the back side of the wafer We using a first grinding material having a first particle size. The fine grinding section 44b is configured to grind the back side of the wafer We using a second grinding material having a second particle size smaller than the first particle size. The precision grinding section 44c is configured to grind the back side of the wafer We using a third grinding material having a third particle size smaller than the second particle size.

[0084] The fine grinding section 45 is configured to grind the backside of the wafer We after being ground by the multiple grinding sections 44. The crystal defect forming section 46 is configured to form minute crystal defects on the backside of the wafer We after being ground by the fine grinding section 45. The crystal defect forming section 46 is configured to perform a process called gettering. The second cassette section 47 is configured to accommodate the wafer We on which the crystal defects have been formed by the crystal defect forming section 46. The single rotating table section 48 is configured to rotate and move the multiple adsorption holding sections 43 to positions corresponding to the multiple grinding sections 44, the fine grinding section 45, and the crystal defect forming section 46, respectively.

[0085] 〈With replacement adhesive device〉

[0086] The tape replacement and sticking device 5 is configured to stick the expansion tape Te to the surface of the wafer We opposite to the circuit surface We1 after the modified portion is removed from the wafer We in the grinding device 4, and to peel off the protective tape Tb stuck to the circuit surface We1 of the wafer We (see FIG. Figure 1 ). It should be noted that the expansion tape Te is an example of a “sheet member” within the scope of the claims.

[0087] Specifically, if Figure 6 As shown, the tape replacement and pasting device 5 includes a box storage unit 51, a robot 52, a conveying mechanism 53, an expansion tape pasting unit 54, and an ultraviolet irradiation unit 55 (see Figure 7 ) and a protective tape peeling portion (not shown).

[0088] The cassette storage portion 51 is configured to be able to store wafers We affixed to the protective tape Tb together with the frame Rf and wafers We affixed to the expansion tape Te together with the frame Rf.

[0089] The robot 52 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf from the cassette storage portion 51 to the transport mechanism 53. The transport mechanism 53 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf to the expansion tape attachment portion 54. The expansion tape attachment portion 54 is configured to attach the frame Rf and the wafer We to the protective tape Tb and the expansion tape Te by attaching the expansion tape Te to the surface of the frame Rf opposite to the surface to which the protective tape Tb is attached.

[0090] The robot 52 is configured to transport the wafer We, attached to the protective tape Tb and the expansion tape Te along with the frame Rf, from the transport mechanism 53 to the ultraviolet irradiation unit 55. The ultraviolet irradiation unit 55 is located within a sealed structure with a door at the entrance and exit. After nitrogen is removed from the atmosphere by nitrogen purging and the interior is filled with nitrogen (nitrogen is supplied to the interior, oxygen is expelled, and nitrogen is then filled), ultraviolet light is irradiated toward the surface of the frame Rf to which the protective tape Tb is attached. This cures the adhesive layer of the protective tape Tb. The robot 52 is configured to return the wafer We, attached to the protective tape Tb and the expansion tape Te along with the frame Rf, from the ultraviolet irradiation unit 55 to the transport mechanism 53.

[0091] The transport mechanism 53 is configured to transport the wafer We attached to the protective tape Tb and the expansion tape Te together with the frame Rf to the protective tape peeling unit. The protective tape peeling unit is configured to peel off the protective tape Tb (see Figure 1 The robot arm 52 is configured to receive the wafer We attached to the expansion tape Te together with the frame Rf from the transport mechanism 53 into the cassette storage unit 51 .

[0092] 〈Expansion Device〉

[0093] The expansion device 6 is configured to bond the expansion tape Te to the surface of the wafer We opposite to the circuit surface and then expand the expansion tape Te to divide the wafer We into a plurality of semiconductor chips Ch (see FIG. Figure 1 ).

[0094] Specifically, if Figure 8 and Figure 9 As shown, the expansion device 6 includes a box portion 601, a lifting hand 602, an adsorption hand 603, and a cold air supply portion 604 (see Figure 9 ), cooling unit 605, expansion portion 606, expansion maintaining member 607, heat shrink portion 608 (refer to Figure 9 )、UV irradiation unit 609 (refer to Figure 9 ), scraper portion 610 and clamping portion 611.

[0095] The box portion 601 is configured to accommodate a wafer ring structure W having a frame Rf and wafers We attached to the expansion tape Te. The lifting hand 602 is configured to remove the wafer ring structure W from the box portion 601. The lifting hand 602 is configured to accommodate the wafer ring structure W in the box portion 601. The suction hand 603 is configured to suction the frame Rf of the wafer ring structure W from above. The cold air supply portion 604 is configured to supply cold air from above to the expansion tape Te when the expansion portion 606 is expanding the expansion tape Te.

[0096] The cooling unit 605 is configured to cool the expansion tape Te from below. The expansion unit 606 is configured to expand the expansion tape Te of the wafer ring structure W along the streets Ws (see FIG. Figure 1 ) to divide the wafer We. The expansion maintaining member 607 is configured to press the expansion tape Te from above to prevent the expansion tape Te near the wafer We from shrinking due to the heating of the heat shrink unit 608. The heat shrink unit 608 is configured to shrink the expansion tape Te expanded by the expansion unit 606 by heating while maintaining the gaps between the plurality of semiconductor chips Ch. The ultraviolet irradiation unit 609 is configured to irradiate the expansion tape Te with ultraviolet light to reduce the adhesive strength of the adhesive layer of the expansion tape Te.

[0097] The scraper portion 610 is configured to partially press the wafer We from below after expanding the expansion tape Te, thereby further dividing the wafer We along the reforming portion. The clamping portion 611 is configured to be able to move the wafer ring structure W in the vertical direction while holding the frame Rf of the wafer ring structure W. The clamping portion 611 is configured to be able to move the wafer ring structure W in the direction from the cooling unit 605 toward the expansion portion 606 and in the direction from the expansion portion 606 toward the cooling unit 605 while holding the frame Rf of the wafer ring structure W.

[0098] (Semiconductor chip manufacturing process)

[0099] Reference Figure 10 , the overall operation of the semiconductor wafer processing system 100 is described below.

[0100] In step S1, the insulating film and inspection pattern are separated in the notching device 1. Specifically, the laser irradiation unit 12 irradiates the insulating film and inspection pattern by irradiating the laser beam Lg along the streets Ws between the semiconductor chips Ch on the circuit surface We1 of the wafer We that are not attached to the protective tape Tb along with the frame Rf, thereby separating the insulating film and inspection pattern. In step S2, the wafer We and the frame Rf are attached to the protective tape Tb in the tape attachment device 2. Specifically, the protective tape attachment unit 24 attaches the protective tape Tb to the wafer We being transported by the transport mechanism 23 and also attaches the frame Rf to the protective tape Tb.

[0101] In step S3, the modified portion is formed on the wafer We in the dicing device 3. That is, the dicing unit 30 irradiates the wafer We with laser light Ld (see FIG. Figure 1 ), to form a modified portion. In step S4, the modified portion is removed from the wafer We in the grinding device 4. That is, the multiple grinding units 44 remove the modified portion of the wafer We by grinding the back surface of the wafer We on the side opposite to the circuit surface We1 in stages. In step S5, in the tape replacement and pasting device 5, after the expansion tape Te is pasted on the wafer We and the frame Rf, the protective tape Tb is peeled off. That is, the expansion tape pasting unit 54 pastes the expansion tape Te on the frame Rf. The protective tape peeling unit peels off the protective tape Tb from the wafer We with the frame Rf after the adhesive layer of the protective tape Tb is hardened by the ultraviolet irradiation unit 55.

[0102] In step S6, the expanding tape Te is expanded in the expanding device 6, dividing the wafer We into a plurality of semiconductor chips Ch. Specifically, the clamping portion 611 is lowered while holding the frame Rf, causing the expanding tape Te, which is in contact with the expanding portion 606, to be pulled downward, thereby expanding the expanding tape Te. Consequently, the tensile force generated by the expanding tape Te causes the wafer We to be divided along the cracks formed in the streets Ws, thereby dividing the wafer We into a plurality of semiconductor chips Ch.

[0103] After step S6, the semiconductor chip manufacturing process ends.

[0104] (Detailed structure of the slotting device)

[0105] like Figure 11 and Figure 12 As shown, the notching apparatus 1 is configured to precisely position the rotational angular position θr of the wafer We based on alignment marks Ar provided on the semiconductor chips Ch in order to process the wafer We using laser light Lg. However, alignment marks Ar are typically provided for each semiconductor chip Ch, which is divided by vertical and horizontal streets Ws. This makes it easy to mistakenly detect adjacent alignment marks Ar of the same shape, making detection difficult. Therefore, the notching apparatus 1 is configured to roughly position the rotational angular position θr of the wafer We based on notches Nt after detecting notches Nt that are larger than the alignment marks Ar. The notching apparatus 1 is configured to detect alignment marks Ar after roughly positioning the rotational angular position θr of the wafer We.

[0106] Here, in the semiconductor wafer processing system 100, a wafer current supply device 201 performs a current supply test on the semiconductor chips Ch placed on the wafer We as an upstream process of the groove forming device 1. During this current supply test, the wafer We is positioned at a relatively precise rotational angle θr so that the probes 201a of the wafer current supply device 201 contact the inspection pattern.

[0107] Therefore, in the notching apparatus 1, if the positioning accuracy of the rotational angular position θr of the wafer We in the wafer energizing device 201 can be maintained, the alignment mark Ar can be detected without performing rough positioning based on the notch Nt. Furthermore, in the notching apparatus 1, if the rotational angular position θr of the wafer We in the wafer energizing device 201 can be positioned, the notch Nt can be detected based on the current rotational angular position θr of the wafer We, thereby reducing the time required for notch Nt detection. Furthermore, while an example of detecting the notch Nt for rough positioning is shown, the orientation flat of the wafer We may also be detected for rough positioning.

[0108] Furthermore, if the positioning accuracy of the rotational angle position θr of the wafer We in the wafer current supply device 201 can be maintained in the notching device 1 , the tape applying device 2 does not need to perform rough positioning using the notch Nt.

[0109] Therefore, the groove forming apparatus 1 of the present embodiment is configured to maintain the positioning accuracy of the rotational angle position θr of the wafer We in the wafer current supplying device 201 .

[0110] Specifically, if Figure 13 As shown, the slotting device 1 includes a box 11, a laser irradiation unit 12, a circuit surface film cleaning unit 13, an imaging unit 14, a conveying mechanism 15, a temporary placement table 16, a base 17, and a control unit 18. The box 11 has been described above, so its description is omitted.

[0111] Here, the vertical direction is referred to as the Z direction, the upward direction is referred to as the Z1 direction, and the downward direction is referred to as the Z2 direction. The horizontal direction perpendicular to the Z direction is referred to as the X direction, one side of the X direction is referred to as the X1 direction, and the other side of the X direction is referred to as the X2 direction. Furthermore, the horizontal direction perpendicular to the X direction is referred to as the Y direction, one side of the Y direction is referred to as the Y1 direction, and the other side of the Y direction is referred to as the Y2 direction.

[0112] (Laser irradiation area)

[0113] The laser irradiation unit 12 is configured to perform the following trenching process: It irradiates the streets Ws between the semiconductor chips Ch on the circuit surface We1 of the wafer We with laser light Lg, thereby forming trenches that separate the insulating film and the inspection pattern. The direction in which the multiple streets Ws along the wafer We extend is the processing direction. Here, the processing direction is the Y1 direction or the Y2 direction.

[0114] The laser irradiation unit 12 includes a chuck stage 12a for grooving, a frame 12b, a laser unit 12c, an imaging unit 12d, and an imaging unit 12e.

[0115] The slotting chuck table 12a is configured to suction and hold the wafer We transported by the transport mechanism 15 while the laser irradiation unit 12 is performing slotting processing, while rotating or moving the wafer We in a horizontal direction (at least one of the X and Y directions). Specifically, the slotting chuck table 12a is configured to hold the wafer We by suctioning the lower surface of the wafer We. While suctioning the wafer We, the slotting chuck table 12a is configured to rotate or move horizontally relative to the laser unit 12c.

[0116] The slotting chuck stage 12a includes a slotting wafer holding stage 121a, a rotating portion (not shown), a Y-direction movable portion 122a, and an X-direction movable portion 123a. The slotting wafer holding stage 121a is formed with suction holes for sucking and holding the wafer We. A recess 1211a is formed in the slotting wafer holding stage 121a into which the U-shaped hand 15a of the transport mechanism 15, described later, can be inserted. The recess 1211a is formed by recessing the Z1-direction side surface (upper surface) of the slotting wafer holding stage 121a in the Z2 direction (downward). The recess 1211a extends in the X direction when the U-shaped hand 15a, described later, is inserted. When the U-shaped hand 15a, described later, is inserted, multiple recesses 1211a (two) are arranged in the Y direction. Alternatively, there may be one or more recesses 1211a. The recess 1211a is an example of a "second recess" in the scope of claims. The U-shaped hand 15a is an example of a "hand" in the scope of claims.

[0117] The rotating portion is configured to rotate the slotting wafer holding table 121a in a circumferential direction about a rotation axis parallel to the Z direction. The rotating portion is attached to the Z2 side of the slotting wafer holding table 121a. The Y-direction moving portion 122a is configured to move the rotating portion in the Y1 direction or the Y2 direction. The Y-direction moving portion 122a is attached to the Z2 side of the rotating portion. The X-direction moving portion 123a is configured to move the Y-direction moving portion 122a in the X1 direction or the X2 direction. The X-direction moving portion 123a is attached to the Z2 side of the Y-direction moving portion 122a and is attached to the Z1 side of the base 17.

[0118] The frame 12b is fixed to the base 17. A laser unit 12c, an imaging unit 12d, and an imaging unit 12e are each fixed to the frame 12b. The laser unit 12c is configured to radiate laser light Lg that separates the insulating film and the inspection pattern. The imaging units 12d and 12e are each configured to image the wafer We held on the grooving chuck stage 12a. The imaging units 12d and 12e are each near-infrared imaging cameras. The imaging units 12d and 12e are each movable in the Z1 direction or the Z2 direction.

[0119] (Circuit surface film cleaning department)

[0120] like Figure 14 As shown, the circuit surface film cleaning unit 13 is configured to form a protective film on the circuit surface We1 of the wafer We, remove the protective film, and dry it. Specifically, the circuit surface film cleaning unit 13 includes a resin coating nozzle 13a, a first rotating mechanism 13b, a cleaning nozzle 13c, a second rotating mechanism 13d, a drying nozzle 13e, a third rotating mechanism 13f, a scattering suppression cover 13g, and a rotating table 13h. Figure 13For the sake of convenience, the structure other than the circuit surface film cleaning unit 13 is not shown.

[0121] <Resin coating nozzle and first rotation mechanism>

[0122] The resin coating nozzle 13a is configured to apply a water-soluble resin to the circuit surface We1 of the wafer We to form a protective film. The resin coating nozzle 13a is configured to drip the water-soluble resin in the Z2 direction (downward direction) from the front end portion on the side opposite to the first rotation mechanism 13b. The resin coating nozzle 13a is connected to a water-soluble resin storage portion (not shown). The first rotation mechanism 13b is configured to rotate the resin coating nozzle 13a to either a coating position Pr1 at which the water-soluble resin is applied to the circuit surface We1 of the wafer We, or a first retreat position Pr2 retreated from the coating position Pr1. The coating position Pr1 is the position of the resin coating nozzle 13a in a state where the front end portion of the resin coating nozzle 13a is arranged on the rotation center axis Cs of the turntable 13h. The first retreat position Pr2 is the position of the resin coating nozzle 13a in a state where the front end portion of the resin coating nozzle 13a is arranged outside the turntable 13h. The first rotating mechanism 13 b is configured to rotate the resin coating nozzle 13 a by the driving force of a motor (not shown).

[0123] <Washing nozzle and second rotating mechanism>

[0124] The cleaning nozzle 13c is configured to supply cleaning water (cold or hot water) to the circuit surface We1 of the wafer We, which removes the water-soluble resin applied by the resin coating nozzle 13a. The cleaning nozzle 13c is configured to drip cleaning water in the Z2 direction (downward) from the tip portion on the side opposite to the second rotation mechanism 13d. The cleaning nozzle 13c is connected to a cleaning water reservoir (not shown). The second rotation mechanism 13d is configured to rotate the cleaning nozzle 13c to either a supply position Pw1, in which cleaning water is supplied to the circuit surface We1 of the wafer We, or a second retreat position Pw2, in which the cleaning nozzle 13c is retreated from the supply position Pw1. The supply position Pw1 is the position of the cleaning nozzle 13c in which the tip portion of the cleaning nozzle 13c is positioned relative to the rotation center axis Cs of the turntable 13h. The second retreat position Pw2 is the position of the cleaning nozzle 13c in which the tip portion of the cleaning nozzle 13c is positioned outside the turntable 13h. The second rotating mechanism 13 d is configured to rotate the washing nozzle 13 c using the driving force of a motor (not shown).

[0125] Drying nozzle and third rotating mechanism

[0126] The drying nozzle 13e is configured to blow warm air to dry the circuit surface We1 of the wafer We. The drying nozzle 13e is configured to blow warm air in the Z2 direction (downward) from its tip end on the side opposite to the third rotating mechanism 13f. The drying nozzle 13e is connected to a warm air supply unit (not shown). The third rotating mechanism 13f is configured to rotate the drying nozzle 13e to either a supply position Pb1, where warm air is blown toward the circuit surface We1 of the wafer We, or a third retracted position Pb2, where the drying nozzle 13e is retracted from the supply position Pb1. The supply position Pb1 positions the drying nozzle 13e with its tip end positioned relative to the rotational axis Cs of the turntable 13h. The third retracted position Pb2 positions the drying nozzle 13e with its tip end positioned outside the turntable 13h. The third rotating mechanism 13f is configured to rotate the drying nozzle 13e using the driving force of a motor (not shown).

[0127] In this manner, the resin coating nozzle 13a, the cleaning nozzle 13c, and the drying nozzle 13e are configured to be rotatable independently of each other.

[0128] Scattering Suppression Shield

[0129] like Figure 15 As shown, the scattering suppression cover 13g is configured to suppress the liquid containing at least one of a water-soluble resin and cleaning water on the circuit surface We1 of the wafer We from scattering from the circuit surface We1 when the wafer We is rotated by the turntable 13h. Specifically, the scattering suppression cover 13g has an inner side surface on the side of the rotation center axis Cs of the turntable 13h. This inner side surface is configured to receive the liquid on the circuit surface We1 of the wafer We that scatters from the circuit surface We1 and to direct the received liquid toward the Z2 direction (downward).

[0130] 〈Turntable〉

[0131] The rotating table 13h is configured to hold and rotate the wafer We while forming a protective film before the groove processing by the laser irradiation unit 12. The protective film protects the circuit surface We1 of the wafer We from the residue (debris) generated during the groove processing by the laser irradiation unit 12. The rotating table 13h is configured to hold and rotate the wafer We while drying the formed protective film before the groove processing by the laser irradiation unit 12.

[0132] In addition, the rotating table 13h is configured to hold and rotate the wafer We when the protective film is removed after the grooving process is performed by the laser irradiation unit 12. In addition, the rotating table 13h is configured to hold and rotate the wafer We when the circuit surface We1 is dried after the grooving process is performed by the laser irradiation unit 12.

[0133] Specifically, if Figure 16 As shown, the rotation stage 13h includes a rotation wafer holding stage 131h, a rotation drive unit 132h, a rotation angle position detection unit 133h, and a Z-direction moving mechanism 134h.

[0134] The rotating wafer holding table 131h is configured to absorb and hold the wafer We transported by the transport mechanism 15. The rotating wafer holding table 131h is a table formed with suction holes for sucking and holding the wafer We. A recess 1311h (see FIG. 1 ) is formed in the rotating wafer holding table 131h into which a U-shaped hand 15a of the transport mechanism 15, which will be described later, can be inserted. Figure 14 The surface (upper surface) on the Z1 side of the rotating wafer holding table 131h is recessed in the Z2 direction (downward), forming a recess 1311h. Recess 1311h extends along the X direction when the U-shaped hand 15a is inserted. When the U-shaped hand 15a is inserted, multiple (two) recesses 1311h are arranged in the Y direction. Alternatively, there may be one, three, or more recesses 1311h. Recess 1311h is an example of a "first recess" within the scope of the claimed invention.

[0135] The rotation drive unit 132h is configured to rotate the rotation wafer holding table 131h based on a control signal received from the control unit 18. The rotation drive unit 132h includes a motor as a drive source. The rotation drive unit 132h is configured to rotate the rotation wafer holding table 131h in the R direction (circumferential direction) about the rotation center axis Cs. Specifically, the rotation drive unit 132h rotates the rotation wafer holding table 131h in the R1 direction or the R2 direction.

[0136] The rotation angle position detection unit 133h is for detecting the rotation angle position θr (see FIG. 1 ) of the wafer We held on the turntable 13h in the rotation direction (R direction) of the turntable 13h. Figure 11 Specifically, the rotation angle position detection unit 133h includes an encoder 1331h and a counter unit 1332h.

[0137] Encoder 1331h is configured to detect the rotation angle of the turntable 13h. Specifically, encoder 1331h transmits a pulse wave to counter 1332h each time it detects a certain rotation angle of the turntable 13h. For example, encoder 1331h transmits a pulse wave to counter 1332h each time it detects a 0.1-degree rotation of the turntable 13h. Encoder 1331h can be configured using an optical rotary encoder (transmissive or reflective), an optical linear encoder (transmissive or reflective), or a magnetic linear encoder.

[0138] The counter unit 1332h has a first count value that increases or decreases the rotation angle of the turntable 13h based on the pulse wave received from the encoder 1331h. The first count value has, for example, a 16-bit resolution. The first count value can count up to 65,536 rotations of the turntable 13h by a certain rotation angle. In other words, each time the first count value increases, the rotation angle increases (or decreases) by a certain rotation angle. The counter unit 1332h has a second count value that increases or decreases the number of rotations of the turntable 13h based on the first count value. The second count value has, for example, a 12-bit resolution. In this case, the number of rotations of the turntable 13h can be counted up to 4,096.

[0139] The Z-direction moving mechanism 134h is configured to integrally move the rotation wafer holding stage 131h, the rotation drive unit 132h, and the rotation angle position detecting unit 133h in the Z1 direction or the Z2 direction. Specifically, the Z-direction moving mechanism 134h includes a piston and a cylinder.

[0140] The Z-direction movement mechanism 134h is configured to retract the protruding piston into the cylinder based on a control signal from the control unit 18, thereby integrally moving the rotary wafer holding table 131h, the rotation drive unit 132h, and the rotation angle position detection unit 133h in the Z2 direction. This moves the rotary wafer holding table 131h to the coating and cleaning height position H1 surrounded by the scattering suppression cover 13g. At the coating and cleaning height position H1, a protective film is formed on the circuit surface We1 of the wafer We, the protective film is dried, and the protective film is removed, and the circuit surface We1 is dried after the protective film is removed.

[0141] In addition, if Figure 16 As shown, the Z-direction moving mechanism 134h is configured to cause a piston to protrude from a cylinder based on a control signal from the control unit 18, thereby integrally moving the rotational wafer holding table 131h, the rotation drive unit 132h, and the rotation angle position detection unit 133h in the Z1 direction. As a result, the rotational wafer holding table 131h moves to a loading / unloading height position H2, where it protrudes from the scatter suppression cover 13g. At the loading / unloading height position H2, the wafer We is loaded into and unloaded from the rotational wafer holding table 131h by the transport mechanism 15.

[0142] (Photography Department)

[0143] like Figure 17As shown, the imaging unit 14 is configured to image the wafer We adsorbed to the rotary wafer holding table 131h from the Z1 direction side. The imaging unit 14 is configured to image the wafer We adsorbed to the rotary wafer holding table 131h from the Z1 direction side to measure the thickness of the protective film applied to the wafer We adsorbed to the rotary wafer holding table 131h. In the image captured by the imaging unit 14, as the thickness of the protective film applied to the wafer We increases, the color approaches black (brightness value 0), and as the thickness of the protective film applied to the wafer We decreases, the color approaches white (brightness value 255). Here, the imaging unit 14 is configured to image the wafer We from the Z1 direction side while the rotary wafer holding table 131h is stopped.

[0144] (Transportation Agency)

[0145] The transport mechanism 15 is configured to transport a wafer We held by a U-shaped hand 15 a described below. Specifically, the transport mechanism 15 includes the U-shaped hand 15 a, a first arm 15 b, a second arm 15 c, and a Z-direction moving mechanism (not shown).

[0146] The U-shaped hand 15a is configured to suck and hold the back surface of the wafer We opposite to the circuit surface We1. The U-shaped hand 15a is a robot hand having suction holes for sucking and holding the wafer We formed in at least a portion extending linearly.

[0147] The first arm 15b connects the U-shaped hand 15a and the second arm 15c. The second arm 15c connects the first arm 15b to a mounting member (not shown). Specifically, the U-shaped hand 15a is connected to the front end of the first arm 15b, which is rotatable about a rotation axis parallel to the Z direction. Furthermore, the base end of the first arm 15b is connected to the front end of the second arm 15c, allowing the first arm 15b to move along the direction in which the first arm 15b extends. Furthermore, the base end of the second arm 15c is mounted to a mounting member (not shown) so as to be movable in the Z1 direction, the Z2 direction, and the direction in which the second arm 15c extends. The Z-direction movement mechanism (not shown) is configured so that the U-shaped hand 15a and the first arm 15b can be moved integrally in the Z1 direction or the Z2 direction by moving the second arm 15c in the Z1 direction or the Z2 direction.

[0148] Thus, the transport mechanism 15 is configured to move the U-shaped hand 15a, the first arm 15b, and the second arm 15c while the wafer We is being sucked thereon, and to align the U-shaped hand 15a with the recess 1311h of the rotating wafer holding table 131h, and then to carry the wafer We into or out of the rotating wafer holding table 131h. Figure 18As shown, the conveying mechanism 15 is constructed to move the U-shaped hand 15a, the first arm 15b and the second arm 15c while the wafer We is adsorbed, align the U-shaped hand 15a with the position of the recess 1211a of the wafer holding table 121a for grooving, and then move the wafer We into or out of the wafer holding table 121a for grooving.

[0149] (Temporary placement table)

[0150] The temporary placement table 16 is configured to suction and hold the wafer We conveyed by the conveying mechanism 15. Here, the temporary placement table 16 is configured to suction and hold the wafer We conveyed by the conveying mechanism 15 after the groove processing by the laser irradiation unit 12 and before the protective film on the circuit surface We1 of the wafer We is removed.

[0151] Specifically, the temporary placement table 16 includes a temporary placement wafer holding table 16 a and a susceptor (not shown). The temporary placement wafer holding table 16 a is fixed to the end portion of the susceptor on the Z1 direction side.

[0152] The temporary placement wafer holding table 16a is a table formed with adsorption holes for adsorbing and holding the wafer We. A recess 161a is formed on the temporary placement wafer holding table 16a into which the U-shaped hand 15a of the transport mechanism 15 can be inserted. The recess 161a is formed by making the surface (upper surface) on the Z1 direction side of the temporary placement wafer holding table 16a concave in the Z2 direction (downward). The recess 161a extends along the X direction. There are multiple (two) recesses 161a arranged in the Y direction. In addition, the recess 1311h can also be one or more than three. In addition, the recess 161a is an example of the "third recess" in the scope of protection required.

[0153] (Base)

[0154] The laser irradiation unit 12 , the circuit surface film cleaning unit 13 , the conveying mechanism 15 , the temporary placement table 16 , and the like are mounted on the base 17 .

[0155] (Control Department)

[0156] The control unit 18 includes a CPU (Central Processing Unit) and a storage unit including ROM (Read Only Memory), RAM (Random Access Memory), and an SSD (Solid State Drive). The storage unit stores a control program for controlling the notching apparatus 1. The control program includes a release position adjustment control for adjusting the release position P2 of the wafer We in the R direction (rotational direction) when the turntable 13h releases the wafer We.

[0157] (Position adjustment control when released)

[0158] like Figure 19 and Figure 20 As shown, the control unit 18 is configured to perform control to adjust the rotational angle position θr of the wafer We based on the detection result of the rotational angle position detector 133 h and the target rotational angle position of the wafer We in the R direction.

[0159] Specifically, the control unit 18 of this embodiment is configured to perform control to adjust the rotational angular position θr of the wafer We based on the detection result of the rotational angular position detector 133h and the initial position P1 of the wafer We in the R direction, which serves as the target rotational angular position when the wafer We is held by the turntable 13h. Furthermore, the control unit 18 is configured to perform control to adjust the release position P2 of the wafer We in the R direction when the turntable 13h releases the wafer We from holding the wafer We based on the detection result of the rotational angular position detector 133h and the initial position P1. Specifically, the control unit 18 is configured to perform control to adjust the release position P2 to coincide with the initial position P1 based on the detection result of the rotational angular position detector 133h and the initial position P1. As an example, the initial position P1 is a state in which the notch Nt of the wafer We faces the Z1 direction.

[0160] Specifically, the control unit 18 is configured to perform the following control: after the water-soluble resin is dripped from the resin coating nozzle 13a, the rotating table 13h is rotated to coat the circuit surface We1 of the wafer We with the water-soluble resin by centrifugal force. The control unit 18 is configured to perform the following control: after the circuit surface We1 of the wafer We is coated with the water-soluble resin, the rotating table 13h is rotated while hot air is blown from the drying nozzle 13e, thereby curing the water-soluble resin on the circuit surface We1 of the wafer We. By rotating the rotating table 13h from the coating completion position P3 (refer to Figure 21 ) is rotated in the R2 direction (or the R1 direction) to make the initial position P1 of the control in which the circuit surface We1 of the wafer We is covered with the water-soluble resin coincide with the position P2 when the control is released.

[0161] Furthermore, the control unit 18 is configured to control the rotation of the turntable 13h after the cleaning water is dripped from the cleaning nozzle 13c, thereby causing the cleaning water to spread over the circuit surface We1 of the wafer We by centrifugal force. After the control of spreading the cleaning water, the control unit 18 is configured to control the rotation of the turntable 13h while blowing warm air from the drying nozzle 13e, thereby drying the circuit surface We1 of the wafer We. By moving the turntable 13h from the drying completion position P4 (refer to FIG. 1 ) of the control of drying the circuit surface We1, the circuit surface We1 of the wafer We is dried. Figure 22) is rotated in the R2 direction (or the R1 direction), so that the initial position P1 of the control for washing with washing water coincides with the position P2 when it is released.

[0162] In order to carry out such control, Figure 23 As shown, the control unit 18 is configured to perform the following control: based on user input, it acquires the speed (rotation speed) and the number of rotations during rotation control of the rotating table 13h. The control unit 18 is configured to perform control to acquire the total rotation angle Tr (Ts) by multiplying the acquired number of rotations by 360 degrees. The speed and number of rotations during rotation control can be set separately for lamination, drying after lamination, cleaning, and drying after cleaning.

[0163] The speed and the number of rotations in the rotation control can be set in a first stage, a second stage, and a third stage.

[0164] Specifically, during coating, if the water-soluble resin is dripped onto the circuit surface We1 while the rotating table 13h is rotating at high speed, the circuit surface We1 may not be evenly coated with the water-soluble resin. In such cases, the rotating table 13h needs to be rotated at a low speed to adjust the thickness of the coating. During coating, if the rotating table 13h is rotated to cover the circuit surface We1 with the water-soluble resin and then the thickness of the coating is adjusted using centrifugal force, the rotating table 13h needs to be rotated at a high speed depending on the viscosity of the coating.

[0165] Furthermore, during cleaning, if the rotating table 13h is rotated at high speed and the cleaning water is dripped onto the circuit surface We1, the cleaning water may not be evenly distributed over the circuit surface We1. In such cases, the rotating table 13h needs to be rotated at a low speed. During cleaning, if the rotating table 13h is rotated to evenly distribute the cleaning water over the circuit surface We1, the rotating table 13h needs to be rotated at a high speed to disperse the cleaning water.

[0166] To cope with the above situation, the speed and number of rotations in the rotation control can be set separately in each of the first, second and third stages. In addition, since there is no need to increase the speed in each of the drying after coating and the drying after cleaning, the user can also set only the first stage.

[0167] like Figure 24 and Figure 25As shown, the control unit 18 is configured to control the rotating table 13h during lamination, drying after lamination, cleaning, and drying after cleaning, based on the speed and rotation frequency settings in the rotation control. Furthermore, the storage unit stores a preset value for the acceleration of the rotating table 13h when accelerating it. Furthermore, the storage unit stores a preset value for the deceleration of the rotating table 13h when decelerating it.

[0168] <Lamination and drying after lamination>

[0169] Specifically, if Figure 24 As shown, the control unit 18 is configured to use the U-shaped hand 15a to transport the wafer We, while maintaining its positioning accuracy at the rotational angle position θr of the wafer We in the wafer current supply device 201, from the cassette unit 11 to the turntable 13h while maintaining the rotational angle at the release position P2, for lamination and post-lamination drying. Here, the control unit 18 is configured to control the return of the number of rotations acquired and recorded by the counter unit 1332h of the rotational angle position detection unit 133h to an initial value based on the wafer We being held by the turntable 13h. Here, "maintaining the rotational angle" means maintaining at least the rotational angle of the wafer We positioned at the release position P2.

[0170] The control unit 18 is configured to control the rotation speed of the turntable 13h during protective film formation (coating and curing) based on the rotation angle of the turntable 13h detected by the encoder 1331h. Specifically, the control unit 18 is configured to control the rotation speed of the turntable 13h through feedback control. In this case, during protective film formation, the control unit 18 is configured to control the turntable 13h to rotate at a low speed (first-stage speed C1V) and then to a high speed (second-stage speed C2V) as described above. Furthermore, the counter unit 1332h is configured to count the number of rotations of the turntable 13h during protective film formation.

[0171] Here, the control unit 18 is configured to perform control such that, upon completion of coating, the thickness of the protective film applied to the wafer We is checked based on the image captured by the imaging unit 14 while the rotation of the rotary table 13h is stopped. If the inspection result indicates a low thickness of the protective film, the control unit 18 is configured to rotate the rotary table 13h after further dripping the water-soluble resin, and if the inspection result indicates a high thickness of the protective film, the control unit 18 is configured to rotate the rotary table 13h. Furthermore, when adjusting the protective film, the counter unit 1332h is configured to subtract the number of rotations of the rotary table 13h.

[0172] Furthermore, the control unit 18 is configured to rotate the wafer We held by the turntable 13h from the rotation angle position θr (for example, Figure 21 The coating is completed at position P3) to the release position P2 (refer to Figure 20 That is, the control unit 18 is configured to perform control to adjust the release position P2 based on the rotation angle of the rotating table 13h detected by the encoder 1331h and the initial position P1.

[0173] Specifically, the control unit 18 is configured to perform control to obtain a total rotation angle Tr by adding the rotation counts Tr1, Tr2, Tr3, Tr4, Tr5, Tr6, and Tr7. The control unit 18 is configured to perform control to obtain a target rotation angle for aligning the coating completion position P3 with the release position P2 (initial position P1) by subtracting the remainder obtained by dividing the total rotation angle Tr by 360 degrees from 360 degrees. Specifically, the target rotation angle is calculated as: target rotation angle = 360 degrees - ((rotation count Tr1 + rotation count Tr2 + rotation count Tr3 + rotation count Tr4 + rotation count Tr5 + rotation count Tr6 + rotation count Tr7) × (360 degrees) × (mod 360 degrees)). The control unit 18 is configured to perform control to adjust the release position P2 to align with the initial position P1 by rotating the rotating table 13h by the target rotation angle.

[0174] The control unit 18 is configured to transport the wafer We positioned at the release position P2 from the turntable 13h to the grooving wafer holding table 121a (laser irradiation unit 12) while maintaining the rotation angle in order to perform the grooving process in the laser irradiation unit 12 through the U-shaped hand 15a.

[0175] <Washing and drying>

[0176] Specifically, if Figure 25 As shown, the control unit 18 is configured to transfer the wafer We, while maintaining its rotational angle position θr positioning accuracy in the laser irradiation unit 12, from the notching wafer holding table 121a to the rotational table 13h via the U-shaped hand 15a, to perform cleaning and post-cleaning drying. Here, the control unit 18 is configured to control the return of the number of rotations acquired and recorded by the counter unit 1332h of the rotational angle position detection unit 133h to an initial value based on the wafer We being held by the rotational table 13h. Here, "maintaining the rotational angle" means maintaining at least the rotational angle of the wafer We positioned in the laser irradiation unit 12.

[0177] The control unit 18 is configured to control the rotational speed of the rotating table 13h during cleaning and drying of the circuit surface We1 based on the rotational angle of the rotating table 13h detected by the encoder 1331h. Specifically, the control unit 18 is configured to control the rotational speed of the rotating table 13h through feedback control. In this case, the control unit 18 is configured to control the rotating table 13h as follows: during cleaning of the circuit surface We1, after rotating the rotating table 13h at a low speed (the first-stage speed W1V), the rotating table 13h is then changed to a high speed (the second-stage speed W2V). Furthermore, during cleaning of the circuit surface We1, the counter unit 1332h is configured to count the number of rotations of the rotating table 13h.

[0178] The control unit 18 is configured to control the rotation of the wafer We held by the rotation table 13h to rotate from the rotation angle position θr (for example, Figure 22 drying completion position P4) to the release position P2 (refer to Figure 20 That is, the control unit 18 is configured to perform control to adjust the release position P2 based on the rotation angle of the rotating table 13h detected by the encoder 1331h and the initial position P1.

[0179] Specifically, the control unit 18 is configured to perform control to obtain a total rotation angle Ts by adding the number of rotations Ts1, Ts2, Ts3, Ts4, Ts5, Ts6, and Ts7. The control unit 18 is configured to perform control to obtain a target rotation angle for aligning the drying completion position P4 with the release position P2 (initial position P1) by subtracting the remainder obtained by dividing the total rotation angle Ts by 360 degrees from 360 degrees. Specifically, the target rotation angle is calculated as: target rotation angle = 360 degrees - ((number of rotations Ts1 + number of rotations Ts2 + number of rotations Ts3 + number of rotations Ts4 + number of rotations Ts5 + number of rotations Ts6 + number of rotations Ts7) × (360 degrees) × (mod 360 degrees)). The control unit 18 is configured to perform control to adjust the release position P2 to align with the initial position P1 by rotating the rotating table 13h by the target rotation angle.

[0180] The control unit 18 is configured to transfer the wafer We positioned at the release position P2 from the turntable 13h to the cassette unit 11 while maintaining the rotation angle using the U-shaped hand 15a, and to accommodate the wafer We in the cassette unit 11. Here, maintaining the rotation angle means maintaining at least the rotation angle of the wafer We positioned at the release position P2.

[0181] (Position adjustment processing when releasing)

[0182] Here, refer to Figure 26 A release-time position adjustment process for aligning the release-time position P2 of the wafer We in the R direction with the initial position P1 will be described.

[0183] like Figure 26 As shown, in step S101, the control unit 18 initializes (resets) the rotation angle position detector 133h (counter unit 1332h) based on the fact that the turntable 13h is holding (attracting) the wafer We. In step S102, after initialization, the control unit 18 rotates the turntable 13h while counting the number of rotations of the turntable 13h. This allows the circuit surface We1 to be coated with a water-soluble resin and then cured (or the coated water-soluble resin is cleaned and the circuit surface We1 is dried). In step S103, the control unit 18 obtains a target rotation angle based on the total rotation angle Tr (Ts). In step S104, the control unit 18 rotates the turntable 13h based on the target rotation angle to adjust the release position P2, and then terminates the release position adjustment process.

[0184] Thus, as described above, the semiconductor chip Ch is manufactured by the grooving device 1, which includes a laser irradiation unit 12, a rotating table 13h, a rotation angle position detection unit 133h, and a control unit 18 that controls the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position of the wafer We in the R direction.

[0185] Furthermore, the semiconductor chip manufacturing process (the method for manufacturing semiconductor chips Ch) includes a step S1 of adjusting the rotational angular position θr of the wafer We based on a detection result by a rotational angular position detection unit 133h and a target rotational angular position of the wafer We in the R direction. The rotational angular position detection unit 133h detects the rotational angular position θr of the wafer We held on a turntable 13h in the R direction. The turntable 13h holds and rotates the wafer We while forming a protective film. The protective film protects the circuit surface We1 of the wafer We from residue generated during the groove processing performed by the laser irradiation unit 12. The method for manufacturing semiconductor chips Ch includes a step S5 of irradiating the wafer We with a plurality of semiconductor chips Ch along the streets Ws. The method for manufacturing semiconductor chips Ch includes a step S6 of dividing the wafer We into the plurality of semiconductor chips Ch along the plurality of streets Ws by expanding the expansion tape Te using the expansion unit 606.

[0186] (Effects of this embodiment)

[0187] In this embodiment, the following effects can be obtained.

[0188] In this embodiment, as described above, the notching apparatus 1 includes the control unit 18, which controls the adjustment of the rotational angular position θr of the wafer We based on the detection results of the rotational angular position detection unit 133h and the target rotational angular position of the wafer We in the R direction. Thus, by adjusting the rotational angular position θr of the wafer We, the laser irradiation unit 12 can perform rough positioning of the rotational angular position θr of the wafer We, comparable to rough positioning of the rotational angular position θr of the wafer We based on the rotational angular position of the notch Nt or the orientation flat provided on the outer circumference of the wafer We. As a result, the position of the alignment mark Ar on the wafer We can be determined based on the wafer We positioned at the adjusted rotational angular position θr without detecting the notch Nt or the orientation flat. This reduces the time required to adjust the rotational angular position θr of the wafer We.

[0189] As described above, the present embodiment includes a control unit 18 . The control unit 18 is configured to perform control to adjust the release position P2 of the wafer We in the R direction, at which the wafer We is released from being held by the turntable 13h, based on the detection results of the rotational angle position detector 133h and the initial position P1 of the wafer We in the R direction, which serves as the target rotational angle position, when the wafer We is held by the turntable 13h. Thus, by adjusting the wafer We to the release position P2, the laser irradiation unit 12 can perform rough positioning of the wafer We's rotational angle position θr to the same degree as rough positioning of the wafer We's rotational angle position θr based on the rotational angle position of the notch Nt or the orientation flat provided on the outer circumference of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be determined based on the wafer We positioned at the release position P2 without detecting the notch Nt or the orientation flat. This reduces the time required to adjust the rotational angle position θr of the wafer We.

[0190] Furthermore, in this embodiment, as described above, the notching apparatus 1 is configured to transport the wafer We, positioned at the release position P2 based on the detection results of the rotation angle position detector 133h and the initial position P1, from the turntable 13h to the laser irradiation unit 12 while maintaining the rotation angle. Thus, the wafer We can be transported to the laser irradiation unit 12 while maintaining the rotation angle at the release position P2. Therefore, the positions of the alignment marks Ar on the wafer We can be determined based on the wafer We maintaining the rotation angle at the release position P2, without performing detection of the notch Nt or the orientation flat in the laser irradiation unit 12. Consequently, the time required to adjust the rotation angle position θr of the wafer We in the laser irradiation unit 12 can be shortened.

[0191] Furthermore, in this embodiment, as described above, the notching apparatus 1 includes a cassette 11 for accommodating the wafer We. The notching apparatus 1 is configured to transport the wafer We, positioned at the release position P2 based on the detection results of the rotational angle position detector 133h and the initial position P1, from the turntable 13h to the cassette 11 while maintaining the rotational angle. Thus, the wafer We can be transported to the cassette 11 while maintaining the rotational angle at the release position P2. Therefore, in the next step of the notching apparatus 1, the position of the alignment mark Ar on the wafer We can be determined based on the wafer We maintaining the rotational angle at the release position P2, without performing detection of the notch Nt or the orientation flat. As a result, the time required to adjust the rotational angle position θr of the wafer We in the next step of the notching apparatus 1 can be shortened.

[0192] In addition, in this embodiment, as described above, the control unit 18 is configured to perform control such that the release position P2 is adjusted to coincide with the initial position P1 based on the detection result of the rotation angle position detector 133h and the initial position P1. Thus, the positioning accuracy of the wafer We at the initial position P1 and the positioning accuracy of the wafer We at the release position P2 can be maintained at the same level. Therefore, even if the positioning accuracy of the wafer We in the previous process of the notching apparatus 1 is high, the positioning accuracy of the wafer We at the release position P2 can also be maintained at a high level.

[0193] Furthermore, in this embodiment, as described above, the rotation angle position detection unit 133h includes an encoder 1331h that detects the rotation angle of the turntable 13h. The control unit 18 is configured to control the adjustment of the release position P2 based on the rotation angle of the turntable 13h detected by the encoder 1331h and the initial position P1. Thus, the encoder 1331h can easily acquire the initial position P1 of the wafer We and adjust it to the release position P2, thereby easily realizing a notching apparatus 1 capable of adjusting the wafer We to the release position P2.

[0194] Furthermore, in this embodiment, as described above, the turntable 13h is configured to hold and rotate the wafer We while the protective film is removed and the circuit surface We1 is dried after the grooving process by the laser irradiation unit 12. The control unit 18 is configured to control the rotational speed of the turntable 13h during each of the protective film formation, protective film removal, and drying of the circuit surface We1 after the protective film removal, based on the rotation angle of the turntable 13h detected by the encoder 1331h. This allows the encoder 1331h to not only determine the initial position P1 of the wafer We and adjust it to the release position P2, but also control the rotational speed of the turntable 13h. This reduces the number of components in the grooving apparatus 1 compared to using a separate sensor.

[0195] In addition, in this embodiment, as described above, the control unit 18 is configured to control the rotation of the wafer We held by the rotation table 13h to rotate the wafer We to form a protective film after the operation is completed, thereby rotating the rotation table 13h from the rotation angle position θr at the end of the operation to the release position P2. This allows the wafer We to be adjusted to the release position P2 after an appropriate protective film is formed on the circuit surface We1 of the wafer We. Therefore, both the protective film formation and the adjustment of the wafer We to the release position P2 can be performed appropriately.

[0196] In addition, in this embodiment, as described above, the notching apparatus 1 includes a transport mechanism 15, which includes a U-shaped hand 15a that suction-holds the back surface of the wafer We opposite the circuit surface We1, and transports the wafer We held by the U-shaped hand 15a. The rotary table 13h includes a rotary wafer holding table 131h that suction-holds the wafer We transported by the transport mechanism 15 and includes a recess 1311h into which the U-shaped hand 15a is inserted. Since the U-shaped hand 15a is inserted into the recess 1311h to hold the wafer We, the posture of the U-shaped hand 15a when the rotary wafer holding table 131h holds the wafer We is preset. Therefore, the U-shaped hand 15a holds the wafer We in a constant posture, and the wafer We held by the U-shaped hand 15a is also held in a constant posture. As a result, the U-shaped hand 15a can transport the wafer We while maintaining the rotation angle at the release position P2.

[0197] In addition, in this embodiment, as described above, the grooving apparatus 1 includes a grooving chuck table 12a that, during the grooving process performed by the laser irradiation unit 12, suction-holds and rotates or horizontally moves the wafer We transported by the transport mechanism 15. The grooving chuck table 12a includes a grooving wafer holding table 121a having a recess 1211a. Since the U-shaped hand 15a is inserted into the recess 1211a and the grooving chuck table 12a holds the wafer We, the posture of the U-shaped hand 15a when holding the wafer We by the grooving chuck table 12a is predetermined. Therefore, since the wafer We is transported from the U-shaped hand 15a to the grooving chuck table 12a in a predetermined posture, the wafer We can be held on the grooving chuck table 12a while maintaining the rotation angle at the release position P2.

[0198] In addition, in this embodiment, as described above, the grooving device 1 includes a temporary placement table 16 that absorbs and holds the wafer We transported by the transport mechanism 15 after the grooving process by the laser irradiation unit 12 and before the protective film on the circuit surface We1 of the wafer We is removed. The temporary placement table 16 includes a temporary placement wafer holding table 16a having a recess 161a. Here, the U-shaped hand 15a is inserted into the recess 161a to hold the wafer We using the temporary placement table 16. Therefore, the posture of the U-shaped hand 15a when holding the wafer We using the temporary placement table 16 is pre-set. Therefore, since the wafer We is transported from the U-shaped hand 15a to the temporary placement table 16 in a certain posture, the wafer We can be held on the temporary placement table 16 while maintaining the rotation angle of the release position P2.

[0199] In addition, in this embodiment, as described above, the grooving device 1 includes a circuit surface film cleaning unit 13, which is provided with a rotating table 13h and performs the formation of a protective film on the circuit surface We1 of the wafer We, the removal of the protective film, and the drying. The circuit surface film cleaning unit 13 includes a resin coating nozzle 13a, which applies a water-soluble resin to the circuit surface We1 of the wafer We to form a protective film. The circuit surface film cleaning unit 13 includes a cleaning nozzle 13c, which supplies cleaning water to the circuit surface We1 of the wafer We for removing the water-soluble resin applied by the resin coating nozzle 13a. The circuit surface film cleaning unit 13 includes a drying nozzle 13e, which blows warm air to dry the circuit surface We1 of the wafer We. The resin coating nozzle 13a, the cleaning nozzle 13c, and the drying nozzle 13e are each configured to be able to rotate independently of each other. Here, if the resin coating nozzle 13a, the cleaning nozzle 13c, and the drying nozzle 13e rotate integrally, for example, when the resin coating nozzle 13a applies the water-soluble resin, the cleaning nozzle 13c and the drying nozzle 13e also rotate together. Therefore, it is thought that the water-soluble resin may adhere to the cleaning nozzle 13c and the drying nozzle 13e. It is also thought that during resin coating or drying, residual liquid may fall from the cleaning nozzle 13c and adhere to other nozzles, or during cleaning or drying, residual liquid may fall from the resin coating nozzle 13a and adhere to other nozzles. In contrast, the resin coating nozzle 13a, the cleaning nozzle 13c, and the drying nozzle 13e are configured to rotate independently of each other. This prevents the water-soluble resin applied from the resin coating nozzle 13a from adhering to the cleaning nozzle 13c and the drying nozzle 13e, residual liquid from adhering to the cleaning nozzle 13c during resin coating or drying, and residual liquid from adhering to the resin coating nozzle 13a during cleaning or drying.

[0200] Furthermore, in this embodiment, as described above, the slotting apparatus 1 includes a first rotating mechanism 13b that rotates the resin coating nozzle 13a to either the coating position Pr1 for coating the circuit surface We1 of the wafer We with a water-soluble resin, or the first retracted position Pr2 for retracting the resin coating nozzle 13a from the coating position Pr1. The slotting apparatus 1 includes a second rotating mechanism 13d that rotates the cleaning nozzle 13c to either the supply position Pw1 for supplying cleaning water to the circuit surface We1 of the wafer We, or the second retracted position Pw2 for retracting the cleaning nozzle 13c from the supply position Pw1. The slotting apparatus 1 includes a third rotating mechanism 13f that rotates the drying nozzle 13e to either the supply position Pb1 for blowing warm air onto the circuit surface We1 of the wafer We, or the third retracted position Pb2 for retracting the drying nozzle 13e from the supply position Pb1. This makes it possible to easily realize a structure in which the resin coating nozzle 13 a , the cleaning nozzle 13 c , and the drying nozzle 13 e are independently rotated.

[0201] In addition, in the present embodiment, as described above, the semiconductor chip Ch is manufactured by a grooving device 1, which includes: a laser irradiation unit 12, which performs the following grooving processing: irradiates the spacing road Ws between the semiconductor chips Ch along the circuit surface We1 of the wafer We with laser Lg to form a groove that divides the insulating film; a rotating table 13h, which holds and rotates the wafer We when forming a protective film that protects the circuit surface We1 of the wafer We from the influence of residues generated during the grooving processing performed by the laser irradiation unit 12; a rotation angle position detection unit 133h, which is used to detect the rotation angle position θr of the wafer We held on the rotating table 13h in the R direction of the rotating table 13h; and a control unit 18, which controls the adjustment of the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position of the wafer We in the R direction. Thus, by adjusting the rotational angular position θr of the wafer We, the laser irradiation unit 12 can perform rough positioning of the rotational angular position θr of the wafer We to the same degree as rough positioning of the rotational angular position θr of the wafer We based on the rotational angular position of the notch Nt or the orientation flat provided on the outer circumference of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be obtained based on the wafer We positioned at the adjusted rotational angular position θr without detecting the notch Nt or the orientation flat. Therefore, it is possible to provide a semiconductor chip Ch that can shorten the time required to adjust the rotational angular position θr of the wafer We.

[0202] Furthermore, in this embodiment, as described above, the method for manufacturing semiconductor chips Ch includes step S1 of adjusting the rotational angular position θr of wafer We based on the detection result of rotational angular position detection unit 133h and the target rotational angular position of wafer We in the R direction. Rotational angular position detection unit 133h detects the rotational angular position θr of wafer We held on turntable 13h in the R direction. Turntable 13h holds and rotates wafer We during the formation of a protective film that protects circuit surface We1 of wafer We from residue generated during the groove processing performed by laser irradiation unit 12. The method for manufacturing semiconductor chips Ch includes step S5 of irradiating laser light Ld along a plurality of streets Ws of wafer We provided with a plurality of semiconductor chips Ch. The method for manufacturing semiconductor chips Ch includes step S6 of dividing wafer We into a plurality of semiconductor chips Ch along the plurality of streets Ws by expanding expansion tape Te using expansion unit 606. Thus, by adjusting the rotational angular position θr of the wafer We, the laser irradiation unit 12 can perform rough positioning of the rotational angular position θr of the wafer We to the same degree as rough positioning of the rotational angular position θr of the wafer We based on the rotational angular position of the notch Nt or the orientation flat provided on the outer circumference of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be obtained based on the wafer We positioned at the adjusted rotational angular position θr without detecting the notch Nt or the orientation flat. Therefore, a method for manufacturing semiconductor chips Ch can be provided that can shorten the time required to adjust the rotational angular position θr of the wafer We.

[0203] [Modification]

[0204] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The scope of the present invention is not indicated by the description of the embodiments described above but by the scope of the claims, and includes all modifications (variations) within the meaning and scope equivalent to the scope of the claims.

[0205] For example, in the above embodiment, the imaging unit 14 is configured to image the wafer We adsorbed on the rotating wafer holding table 131h from the Z1 direction side to measure the thickness of the protective film applied to the wafer We adsorbed on the rotating wafer holding table 131h, but the present invention is not limited to this. In the present invention, as Figure 27 As shown in the modified example, the imaging unit 714 can also be configured to image the position reference portion (notch Nt or orientation plane) provided on the periphery of the wafer We by imaging the wafer We held on the turntable 13h in order to detect the rotation angle position θr of the wafer We held on the turntable 13h.

[0206] In this case, the notching device 701 includes a notching chuck table 12a. During notching processing by the laser irradiation unit 12, the notching chuck table 12a suction-holds the wafer We transported by the transport mechanism 15 and rotates or moves the wafer We horizontally. The control unit 718 is configured to perform control to adjust the rotational angular position θr of the wafer We after the wafer We is held by the notching chuck table 12a, based on a preset target rotational angular position and an image of the wafer We including the position reference portion captured by the imaging unit 714 at the completion of rotation of the rotation table 13h. Therefore, based on the image of the wafer We, after the wafer We is held by the grooving chuck table 12a, the rotation angle position of the wafer We is adjusted using the grooving chuck table 12a. Therefore, since the rotation angle position θr of the wafer We can be adjusted based on the actual rotation angle position θr of the wafer We, the wafer We can be accurately adjusted to the pre-set target rotation angle position and the wafer We can be held in the grooving chuck table 12a.

[0207] The notching device 701 also includes a cassette 11 (wafer storage unit) for storing wafers We. The notching device 1 includes a transport mechanism 15, which includes a U-shaped hand 15a that suction-holds the back surface of the wafer We opposite the circuit surface We1. The transport mechanism 15 is configured to transport the wafer We held by the U-shaped hand 15a. The rotational angle position detector includes an imaging unit 714 that images the wafer We held on the turntable 13h and the notch Nt (position reference) formed on the outer periphery of the wafer We, thereby detecting the rotational angle position θr of the wafer We held on the turntable 13h. The control unit 718 is configured to perform control such that, based on a preset target rotational angle position and an image of the wafer We, including the notch Nt (position reference portion), captured by the imaging unit 714 after the rotation of the turntable 13 h is completed, the posture of the U-shaped hand 15 a is adjusted when the U-shaped hand 15 a receives the wafer We into the cassette 11 (wafer receiving portion), thereby adjusting the rotational angle position of the wafer We. Thus, by adjusting the rotational angle position of the wafer We by the U-shaped hand 15 a based on the image of the wafer We, the rotational angle position of the wafer We can be adjusted based on the actual rotational angle position of the wafer We. Therefore, the wafer We can be accurately adjusted to the preset target rotational angle position and received in the cassette 11 (wafer receiving portion).

[0208] Reference Figures 28 to 30 The following describes the transport of the wafer We from the cassette 11 to the chuck table 12a for grooving. Figure 28As shown, the origin of the rotational angular position θh of the U-shaped hand 15a represents the position in which the linear portion of the U-shaped hand 15a extends parallel to the X-direction. Furthermore, the origin of the rotational angular position θs of the rotary table 13h represents the state in which the recess 1311h of the rotating wafer holding table 131h extends parallel to the X-direction. Furthermore, the origin of the rotational angular position θg of the slotting chuck table 12a represents the state in which the recess 1211a of the slotting wafer holding table 121a extends parallel to the X-direction. The target rotational angular position of the wafer We is pre-stored in the memory unit of the control unit 18.

[0209] like Figure 28 As shown, the control unit 718 is configured to control the wafer We to be taken out from the cassette unit 11 by the U-shaped hand 15a while the rotation angle position θh of the U-shaped hand 15a is aligned with the origin. Figure 29 As shown, the control unit 718 is configured to control the wafer We to be transferred to the rotation table 13h after the wafer We is removed from the cassette unit 11, with the rotation angle position θs aligned with the origin. The control unit 718 is configured to control the rotation table 13h to suction and hold the wafer We after the U-shaped hand 15a is removed from the recess 1311h of the rotation wafer holding table 131h.

[0210] The control unit 718 is configured to control the rotational angular position θs to be aligned with the origin and then stopped while rotating the turntable 13h holding the wafer We, after applying and drying a protective film to the circuit surface We1 of the wafer We. The control unit 718 is configured to control the image capture unit 714 to capture an image of the wafer We held on the turntable 13h, based on the alignment of the rotational angular position θs with the origin and the stop of the turntable 13h. The control unit 718 is configured to control the rotational angular position θr of the wafer We based on the image of the wafer We captured by the image capture unit 714. The control unit 718 is configured to control the calculation of the difference θw based on the difference between the acquired rotational angular position θr of the wafer We and a pre-stored (set) target rotational angular position.

[0211] like Figure 29 As shown, the control unit 718 is configured to control the wafer We to be transferred to the chuck table 12a for grooving so that the rotation angle position θg is aligned with the origin after the U-shaped hand 15a that aligns the rotation angle position θh with the origin is inserted into the recess 1311h of the rotating table 13h so that the rotation angle position θs is aligned with the origin to adsorb and hold the wafer We.

[0212] like Figure 30As shown, the control unit 718 is configured to control the grooving chuck table 12a to suction and hold the wafer We after the U-shaped hand 15a is removed from the recess 1211a of the grooving wafer holding table 121a. Furthermore, the control unit 718 is configured to control the grooving chuck table 12a to rotate the rotational angular position θg by the difference θw from the origin. After rotating the rotational angular position θg by the difference θw from the origin, the control unit 718 is configured to align the grooving chuck table 12a in the horizontal direction and the R direction (circumferential direction). After this alignment, the control unit 718 is configured to perform the grooving process by the laser irradiation unit 12.

[0213] In this manner, if the rotational angle position θr is adjusted on the rotational table 13h, the hand 15a cannot be inserted into the recess 1311h. Therefore, the rotational angle position θr is not adjusted on the rotational table 13h, and the wafer We is placed on the grooving wafer holding table 121a by the U-shaped hand 15a. After the wafer We is placed on the grooving wafer holding table 121a by the hand 15a, the control unit 718 is configured to control the grooving wafer holding table 121a of the grooving chuck table 12a to rotate based on the difference θw, and to adjust the grooving wafer holding table 121a so that the rotational angle position θr of the wafer We coincides with a preset target rotational angle position.

[0214] Furthermore, in the above-described modified example, the control unit 718 is configured to perform control such that the grooving wafer holding table 121a of the grooving chuck table 12a is rotated to align and adjust the rotational angular position θr of the wafer We so that it coincides with the target rotational angular position. However, the present invention is not limited thereto. In the present invention, the control unit may also be configured to perform control such that the grooving wafer holding table is rotated to align and adjust the rotational angular position of the wafer so that it coincides with the target rotational angular position by a predetermined angle.

[0215] In addition, refer to Figures 28 to 30 , the conveyance of the wafer We from the chuck table 12a for grooving to the cassette 11 will be described. In addition, since the conveyance of the wafer We from the cassette 11 to the chuck table 12a for grooving is the same as the top view, the same figure will be referred to. Figures 28 to 30 Provide explanation.

[0216] like Figure 29 and Figure 30As shown, the control unit 718 is configured to control the wafer We to be transferred to the rotation table 13h, which has its rotation angle position θs aligned with the origin, after inserting the U-shaped hand 15a, which has its rotation angle position θh aligned with the origin, into the recess 1211a of the slotting chuck table 12a, which has its rotation angle position θg aligned with the origin. The control unit 718 is configured to control the wafer We to be sucked and held by the rotation table 13h after the U-shaped hand 15a is inserted into the recess 1211a of the slotting chuck table 12a, which has its rotation angle position θg aligned with the origin. The control unit 718 is configured to control the wafer We to be sucked and held by the rotation table 13h after the U-shaped hand 15a is removed from the recess 1311h of the rotation wafer holding table 131h.

[0217] The control unit 718 is configured to control the rotational table 13h, which holds the wafer We, to clean and dry the protective film on the circuit surface We1 of the wafer We while rotating the table. The control unit 718 is configured to control the rotational angle position θs to be aligned with the origin and then to stop the table. The control unit 718 is configured to control the imaging unit 714 to capture an image of the wafer We held on the table 13h, based on the image of the wafer We captured by the imaging unit 714. The control unit 718 is configured to control the calculation of the difference θc based on the difference between the acquired rotational angle position θr of the wafer We and a pre-stored (set) target rotational angle position.

[0218] like Figure 28 and Figure 29 As shown, the control unit 718 is configured to control the removal of the U-shaped hand 15a from the recess 1311h of the turntable 13h after inserting the U-shaped hand 15a, whose rotational angle position θh is aligned with the origin, into the recess 1311h of the turntable 13h, whose rotational angle position θs is aligned with the origin, and then suctioning and holding the wafer We. The control unit 718 is configured to control the removal of the U-shaped hand 15a from the recess 1311h of the turntable 13h. After the removal of the U-shaped hand 15a, the control unit 718 is configured to control the rotational angle position θh of the U-shaped hand 15a to rotate by a difference θc from the origin. After the rotational angle position θh of the U-shaped hand 15a is rotated by a difference θc from the origin, the control unit 718 is configured to control the storage of the wafer We in the cassette unit 11.

[0219] Thus, when adjusting the rotational angle position θr on the turntable 13h, the hand 15a cannot be inserted into the recess 1311h. Therefore, the rotational angle position θr is not adjusted on the turntable 13h, and the wafer We is accommodated in the cassette 11 by the U-shaped hand 15a. Furthermore, when returning the cleaned and dried wafer We to the cassette 11, the control unit 718 is configured to perform control such that the rotational angle position θr of the wafer We is rotated based on the difference θc, and the rotational angle position θr of the wafer We is adjusted so as to coincide with a preset target rotational angle position.

[0220] Furthermore, in the above-described modified example, the control unit 718 is configured to perform control such that the U-shaped hand 15a is rotated so that the rotational angular position θr of the wafer We is aligned with a preset target rotational angular position for adjustment. However, the present invention is not limited thereto. In the present invention, the control unit may also be configured to perform control such that the U-shaped hand is rotated so that the rotational angular position of the wafer is aligned with a position that is offset by a predetermined angle from the preset target rotational angular position for adjustment.

[0221] In addition, in the above embodiment, the control unit 18 is configured to perform control such that the release position P2 of the wafer We is adjusted to align with the initial position P1 based on the detection result of the rotational angle position detection unit 133h and the initial position P1. However, the present invention is not limited to this. In the present invention, the control unit may be configured to perform control such that the release position is adjusted to align with a position deviated by a predetermined angle from the initial position based on the detection result of the rotational angle position detection unit and the initial position.

[0222] In addition, in the above embodiment, the transport mechanism 15 is shown as having a U-shaped hand 15a, but the present invention is not limited to this. In the present invention, the transport mechanism may also have a rod-shaped hand. In this case, the recessed portion of the wafer holding table for grooving, the recessed portion of the wafer holding table for rotation, and the recessed portion of the wafer holding table for temporary placement are formed to correspond to the shape of the hand.

[0223] In addition, in the above embodiment, the U-shaped hand 15a is configured to suck and hold the back surface of the wafer We opposite to the circuit surface We1, but the present invention is not limited to this. In the present invention, the U-shaped hand may also suck and hold the circuit surface of the wafer.

[0224] Furthermore, in the above embodiment, for ease of explanation, an example of the control processing of the control unit 18 is illustrated using a flow chart of a process-driven type in which processing is performed sequentially according to a process flow. However, the present invention is not limited to this. In the present invention, the control processing of the control unit can also be performed using an event-driven type of processing in which processing is performed on an event-by-event basis. In this case, the control processing can be performed entirely in an event-driven manner, or a combination of event-driven and flow-driven processing can be used.

[0225] Label Description

[0226] 1. 701 slotting device;

[0227] 11. Box section (wafer storage section);

[0228] 12. Laser irradiation part;

[0229] 12a Chuck table for slotting;

[0230] 13a Resin coating nozzle;

[0231] 13b first rotating mechanism;

[0232] 13c Cleaning nozzle;

[0233] 13d second rotating mechanism;

[0234] 13e drying nozzle;

[0235] 13f third rotating mechanism;

[0236] 13h rotating table;

[0237] 14, 714 Filming Department;

[0238] 15. Transport mechanism;

[0239] 15a Hand;

[0240] 16. Temporary placement table;

[0241] 16a: wafer holding table for temporary placement;

[0242] 18, 718 Control Department;

[0243] 23 transport agencies;

[0244] 121a Wafer holding table for grooving;

[0245] 131h Rotary wafer holding table;

[0246] 133h Rotation angle position detection unit;

[0247] 161a recess;

[0248] 606 Extension Department;

[0249] 1211a recess;

[0250] 1311h concavity;

[0251] 1331h encoder;

[0252] Ch semiconductor chip;

[0253] Lg laser;

[0254] P1 initial position;

[0255] P2 position when released;

[0256] Pb1 air supply position;

[0257] Pb2 third retreat position;

[0258] Pr1 coating position;

[0259] Pr2 first retreat position;

[0260] Pw1 supply position;

[0261] Pw2 second retreat position;

[0262] Te expansion belt (sheet member);

[0263] We wafer;

[0264] We1 circuit surface;

[0265] Ws cutting road;

[0266] θr Rotation angle position.

Claims

1. A slotting device comprising: a laser irradiation unit for performing a groove process in which a laser is irradiated along the streets between the semiconductor chips on the circuit surface of the wafer to form grooves for dividing the insulating film; a rotating table for holding and rotating the wafer while forming a protective film, wherein the protective film protects the circuit surface of the wafer from residues generated during the groove processing performed by the laser irradiation unit; a rotation angle position detection unit for detecting a rotation angle position of the wafer held on the turntable in a rotation direction of the turntable; and The control unit performs control to adjust the rotational angle position of the wafer based on a detection result of the rotational angle position detection unit and a target rotational angle position of the wafer in the rotational direction.

2. The slotting device according to claim 1, wherein: The control unit is configured to perform the following control: based on the detection result of the rotation angle position detection unit and the initial position of the wafer in the rotation direction as the target rotation angle position when the wafer is held by the turntable, adjust the release position of the rotation angle position of the wafer in the rotation direction as the time of releasing the hold of the wafer by the turntable.

3. The slotting device according to claim 2, wherein: The grooving device is configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detector and the initial position from the turntable to the laser irradiation unit while maintaining the rotation angle.

4. The slotting device according to claim 2, wherein: The grooving device further includes a wafer receiving portion for receiving the wafer. The notching device is configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detector and the initial position from the turntable to the wafer storage portion while maintaining the rotation angle.

5. The slotting device according to claim 2, wherein: The control unit is configured to perform control to adjust the release position to coincide with the initial position based on the detection result of the rotation angle position detection unit and the initial position.

6. The slotting device according to claim 2, wherein: The rotation angle position detection unit includes an encoder for detecting the rotation angle of the rotating table. The control unit is configured to perform control to adjust the release position based on the rotation angle of the rotation table detected by the encoder and the initial position.

7. The slotting device according to claim 6, wherein: The rotating table is configured to hold and rotate the wafer while removing the protective film and drying the circuit surface after the groove forming process by the laser irradiation unit. The control unit is configured to control the rotation speed of the turntable during each of forming the protective film, removing the protective film, and drying the circuit surface after removing the protective film, based on the rotation angle of the turntable detected by the encoder.

8. The slotting device according to claim 2, wherein: The control unit is configured to control the turntable to rotate from the rotation angle position at the end of the operation to the release position after the operation including the formation of the protective film by rotating the wafer held by the turntable is completed.

9. The slotting device according to claim 1, wherein: The grooving device further includes a chuck table for grooving, which absorbs and holds the wafer transported by the transport mechanism and rotates or moves the wafer in a horizontal direction during the grooving process performed by the laser irradiation unit. The rotation angle position detection unit includes a photographing unit that photographs the wafer held on the turntable to photograph a position reference portion provided on the outer periphery of the wafer, thereby detecting the rotation angle position of the wafer held on the turntable. The control unit is configured to perform the following control: based on the preset target rotation angle position and the image of the wafer including the position reference portion captured by the imaging unit when the rotation of the rotation table is completed, the rotation angle position is adjusted after the wafer is held by the chuck stage for grooving.

10. The slotting device according to claim 1, wherein: The slotting device further comprises: a wafer receiving portion for receiving the wafer; and A transport mechanism includes a hand that sucks and holds the wafer, and the transport mechanism is configured to transport the wafer held by the hand. The rotation angle position detection unit includes a photographing unit that photographs the wafer held on the turntable to photograph a position reference portion provided on the outer periphery of the wafer, thereby detecting the rotation angle position of the wafer held on the turntable. The control unit is configured to perform the following control: based on the pre-set target rotation angle position and the image of the wafer including the position reference portion taken by the imaging unit when the rotation of the turntable is completed, the posture of the hand when the hand receives the wafer into the wafer receiving portion is adjusted, thereby adjusting the rotation angle position of the wafer.

11. The slotting device according to claim 1, wherein: The grooving device further includes a transport mechanism including a hand that sucks and holds the wafer, and the transport mechanism is configured to transport the wafer held by the hand. The turntable includes a rotational wafer holding table configured to suction and hold the wafer conveyed by the conveying mechanism and having a first recessed portion into which the hand can be inserted.

12. The slotting device according to claim 11, wherein: The grooving device further includes a chuck table for grooving, which absorbs and holds the wafer transported by the transport mechanism and rotates or moves the wafer horizontally during the grooving process performed by the laser irradiation unit. The chuck table for grooving includes a wafer holding table for grooving in which a second recess is formed.

13. The slotting device according to claim 11, wherein: The grooving device further includes a temporary placement table for sucking and holding the wafer conveyed by the conveying mechanism after the grooving process by the laser irradiation unit and before the protective film on the circuit surface of the wafer is removed. The temporary placement table includes a temporary placement wafer holding table having a third recess formed therein.

14. The slotting device according to claim 1, wherein: The grooving device further includes a circuit surface protection and cleaning unit, which is provided with the rotating table and performs forming of the protective film on the circuit surface of the wafer, removal of the protective film, and drying. The circuit surface protection and cleaning unit includes: a resin coating nozzle for coating a water-soluble resin on the circuit surface of the wafer to form the protective film; a cleaning nozzle for supplying cleaning water for removing the water-soluble resin applied by the resin application nozzle to the circuit surface of the wafer; and A drying nozzle blows warm air to dry the circuit surface of the wafer. The resin coating nozzle, the cleaning nozzle, and the drying nozzle are configured to be rotatable independently of each other.

15. The slotting device according to claim 14, wherein: The slotting device further comprises: a first rotating mechanism for rotating the resin coating nozzle to either a coating position for coating the water-soluble resin onto the circuit surface of the wafer or a first retracting position for retracting the resin coating nozzle from the coating position; a second rotating mechanism for rotating the cleaning nozzle to either a supply position for supplying cleaning water to the circuit surface of the wafer or a second retracting position for retracting the cleaning nozzle from the supply position; and The third rotating mechanism rotates the drying nozzle to either a blow position for blowing warm air toward the circuit surface of the wafer or a third retracted position for retracting the drying nozzle from the blow position.

16. A semiconductor chip manufactured by a grooving device, the grooving device comprising: a laser irradiation unit for performing a grooving process, in which a laser is irradiated along the spacing between the semiconductor chips on the circuit surface of the wafer to form a groove that divides the insulating film; a turntable for holding and rotating the wafer when a protective film is formed, the protective film protecting the circuit surface of the wafer from the influence of residues generated during the grooving process performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the wafer held on the turntable in the rotation direction of the turntable; and a control unit for controlling the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction.

17. A method for manufacturing a semiconductor chip, comprising: a step of adjusting the rotational angular position of the wafer based on a detection result of a rotational angular position detection unit and a target rotational angular position of the wafer in the rotational direction, the rotational angular position detection unit being configured to detect the rotational angular position of the wafer held on a turntable in the rotational direction of the turntable, the turntable holding and rotating the wafer while forming a protective film, the protective film protecting a circuit surface of the wafer from residue generated during a groove forming process performed by a laser irradiation unit; irradiating the wafer with a plurality of semiconductor chips with laser light along a plurality of streets; and The step of dividing the wafer into the plurality of semiconductor chips along the plurality of streets by expanding the sheet member using an expanding portion.

Images