Laser processing apparatus, laser processing method, semiconductor chip, and method for manufacturing semiconductor chip

Abstract

The laser processing device (7) is provided with: a laser irradiation unit (73) for irradiating a wafer (We) with laser light and processing the wafer (We); a wafer holding unit (74) that holds the wafer (We) when the laser irradiation unit (73) performs processing; and a wafer conveyance unit (75) that conveys the wafer (We) to the single wafer holding unit (74). The wafer transport unit (75) includes a first transport unit (75a) and a second transport unit (75b).

Description

Technical Field

[0001] The present invention relates to a laser processing device, a laser processing method, a semiconductor chip, and a method for manufacturing the semiconductor chip. Background Art

[0002] Conventionally, there is a known laser processing device that processes a wafer by irradiating it with laser light. Such a laser processing device is disclosed in, for example, Japanese Patent Application Laid-Open No. 2017-064743.

[0003] Japanese Patent Application Laid-Open No. 2017-064743 discloses a laser processing apparatus comprising: a laser irradiation unit for processing wafers by irradiating them with laser light; a wafer holding unit for holding the wafers while they are being processed by the laser irradiation unit; and a wafer transport unit for transporting the wafers relative to the wafer holding unit. The laser processing apparatus comprises two laser irradiation units, two wafer holding units, and two wafer transport units, enabling simultaneous laser processing of two wafers.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2017-064743 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] However, in the laser processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2017-064743, while it is possible to efficiently process multiple wafers by laser processing two wafers in parallel, it requires two laser irradiation units, two wafer holding units, and two wafer transport units, complicating the apparatus structure. Therefore, a laser processing apparatus that can efficiently process multiple wafers while suppressing the complexity of the apparatus structure is desired.

[0009] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a laser processing apparatus, a laser processing method, and a semiconductor chip capable of efficiently processing a plurality of wafers while suppressing the complexity of the apparatus structure.

[0010] Technical solutions to problems

[0011] The laser processing device of the first aspect of the present invention comprises: a laser irradiation unit for irradiating a wafer with laser for processing; a wafer holding unit for holding the wafer while being processed by the laser irradiation unit; and a wafer transport unit for transporting the wafer relative to a single wafer holding unit, the wafer transport unit including a first transport unit and a second transport unit.

[0012] In the laser processing device of the first aspect of the present invention, as described above, the wafer transport unit that transports wafers relative to a single wafer holding unit includes a first transport unit and a second transport unit. Thus, while the wafer held by the single wafer holding unit is being processed by the laser irradiation unit, one of the first transport unit and the second transport unit can be used to transport and prepare the next wafer. Moreover, when the processing of the wafer held by the wafer holding unit is completed, the other of the first transport unit and the second transport unit can be used to receive the processed wafer from the wafer holding unit, and the first transport unit and the second transport unit can be used to hand over the pre-prepared wafer to the wafer holding unit. Thus, when a single wafer holding unit is used to process a wafer, the standby time of the laser irradiation unit can be suppressed from becoming longer, so that multiple wafers can be processed efficiently. In addition, there is no need to provide two laser irradiation units and two wafer holding units, so the complexity of the device structure can be suppressed. As a result, multiple wafers can be processed efficiently while suppressing the complexity of the device structure.

[0013] In the laser processing apparatus according to the first aspect, the wafer transport unit is preferably configured such that one of the first transport unit and the second transport unit receives a processed wafer from a single wafer holding unit, and the other of the first transport unit and the second transport unit delivers an unprocessed wafer to the single wafer holding unit. With this configuration, the first transport unit and the second transport unit can quickly receive a processed wafer from the wafer holding unit and then quickly deliver a wafer to be processed next to the wafer holding unit.

[0014] In the laser processing apparatus according to the first aspect, the first transport unit and the second transport unit of the wafer transport unit are preferably arranged adjacent to each other in the horizontal direction. With this configuration, after a wafer is received from the wafer holding unit by one of the first transport unit and the second transport unit, the wafer can be quickly transferred to the wafer holding unit by the other of the first transport unit and the second transport unit adjacent to each other in the horizontal direction.

[0015] In the laser processing apparatus according to the first aspect, the first and second transport units of the wafer transport unit are preferably arranged above the wafer holding unit. This configuration allows the first and second transport units to move relative to the wafer holding unit upward to transport the wafer. This prevents the overall area (installation area) of the apparatus from increasing in size when viewed from above.

[0016] In the laser processing apparatus according to the first aspect, the wafer transport unit preferably includes a common lifting mechanism for lifting and lowering both the first transport unit and the second transport unit. This configuration can suppress an increase in the number of components compared to a case where separate lifting mechanisms are provided for lifting and lowering the first transport unit and the second transport unit.

[0017] In this case, it is preferred that the wafer transport unit does not move the first transport unit and the second transport unit in the horizontal direction, and that the first transport unit and the second transport unit are raised and lowered integrally by a lifting mechanism. With this configuration, the wafer transport unit only needs to be provided with a lifting mechanism that moves the first transport unit and the second transport unit in the vertical direction integrally, thereby preventing the structure of the wafer transport unit from becoming complicated.

[0018] The laser processing apparatus according to the first aspect of the present invention preferably further comprises: a wafer storage unit capable of storing a plurality of wafers; a conveyor for transporting wafers pulled out of the wafer storage unit; and a control unit configured to control the delivery of processed wafers received from the wafer holding unit to the conveyor via one of the first transport unit and the second transport unit, and the delivery of unprocessed wafers received from the conveyor to the wafer holding unit via the other of the first transport unit and the second transport unit. With this configuration, both the first transport unit and the second transport unit can be used to transport unprocessed and processed wafers between the conveyor and the wafer holding unit, thereby enabling rapid and efficient transport of wafers relative to the wafer holding unit.

[0019] In this case, it is preferable that the conveyor mechanism is configured to retreat to a position where it does not interfere with the wafer conveyor when transferring wafers between the first conveyor unit or the second conveyor unit of the wafer conveyor and the wafer holding unit. With this configuration, the conveyor mechanism retreats to a position where it does not interfere when transferring wafers between the first conveyor unit or the second conveyor unit and the wafer holding unit, thereby making it possible to easily transfer wafers to the wafer holding unit.

[0020] In the laser processing apparatus according to the first aspect, the laser irradiation unit is preferably configured to perform a dicing process for dividing a wafer into a plurality of semiconductor chips. This configuration can suppress the complexity of the device structure for dicing the wafer and enable efficient dicing of a plurality of wafers.

[0021] In the laser processing apparatus according to the first aspect, the laser irradiation unit is preferably configured to perform grooving to separate an insulating film provided on a wafer. This configuration can suppress the complexity of the apparatus for grooving wafers and enable efficient grooving of multiple wafers.

[0022] The laser processing method of the second aspect of the present invention includes: a process of irradiating a wafer with laser from a laser irradiation part to perform processing; a process of holding the wafer by a wafer holding part when the processing is performed by the laser irradiation part; and a process of transporting the wafer relative to a single wafer holding part by a wafer transport part, wherein the wafer transport part includes a first transport part and a second transport part.

[0023] In the laser processing method of the second aspect of the present invention, as described above, there is a process of transporting a wafer relative to a single wafer holding part by a wafer transport part including a first transport part and a second transport part. Thus, while the wafer held by a single wafer holding part is being processed by the laser irradiation part, one of the first transport part and the second transport part can be used to transport and prepare the next wafer. Moreover, when the processing of the wafer held by the wafer holding part is completed, the other of the first transport part and the second transport part can be used to receive the wafer after the processing from the wafer holding part, and the first transport part and the second transport part can be used to hand over the pre-prepared wafer to the wafer holding part. Thus, when a single wafer holding part is used to process the wafer, the standby time of the laser irradiation part can be suppressed from becoming longer, so that multiple wafers can be processed efficiently. In addition, there is no need to provide two laser irradiation parts and two wafer holding parts, so the complexity of the device structure can be suppressed. As a result, a laser processing method that can suppress the complexity of the device structure and efficiently process multiple wafers can be provided.

[0024] The semiconductor chip of the third aspect of the present invention is manufactured by a laser processing device, which includes: a laser irradiation unit, which irradiates the wafer with laser for processing; a wafer holding unit, which holds the wafer when it is processed by the laser irradiation unit; and a wafer conveying unit, which conveys the wafer relative to a single wafer holding unit, and the wafer conveying unit includes a first conveying unit and a second conveying unit.

[0025] In the semiconductor chip of the third aspect of the present invention, by being constructed as described above, while a wafer held by a single wafer holding portion is being processed by a laser irradiation portion, one of the first transport portion and the second transport portion can be used to transport and prepare the next wafer. Moreover, when the processing of the wafer held by the wafer holding portion is completed, the other of the first transport portion and the second transport portion can be used to receive the wafer after the processing from the wafer holding portion, and one of the first transport portion and the second transport portion can be used to deliver the pre-prepared wafer to the wafer holding portion. Thus, when a single wafer holding portion is used to process a wafer, the standby time of the laser irradiation portion can be suppressed from becoming longer, thereby enabling efficient processing of multiple wafers. In addition, there is no need to provide two laser irradiation portions and two wafer holding portions, thereby enabling the device structure to be suppressed from becoming complicated. As a result, a semiconductor chip can be provided that can suppress the complexity of the device structure and efficiently process multiple wafers.

[0026] The fourth aspect of the present invention relates to a method for manufacturing a semiconductor chip, including: a process of processing a wafer by irradiating the wafer with laser light from a laser irradiation portion; a process of holding the wafer by a wafer holding portion while the wafer is processed by the laser irradiation portion; a process of transporting the wafer relative to a single wafer holding portion by a wafer transport portion, the wafer transport portion including a first transport portion and a second transport portion; and a process of dividing the wafer into a plurality of semiconductor chips.

[0027] In the manufacturing method of the semiconductor chip of the fourth aspect of the present invention, as described above, there is a process of transporting a wafer relative to a single wafer holding part using a wafer transport part including a first transport part and a second transport part. Thus, while the wafer held by a single wafer holding part is being processed by the laser irradiation part, one of the first transport part and the second transport part can be used to transport and prepare the next wafer. Moreover, when the processing of the wafer held by the wafer holding part is completed, the other of the first transport part and the second transport part can be used to receive the wafer after the processing from the wafer holding part, and the first transport part and the second transport part can be used to hand over the pre-prepared wafer to the wafer holding part. Thus, when a single wafer holding part is used to process the wafer, the standby time of the laser irradiation part can be suppressed from becoming longer, so that multiple wafers can be processed efficiently. In addition, there is no need to provide two laser irradiation parts and two wafer holding parts, so the complexity of the device structure can be suppressed. As a result, a manufacturing method of semiconductor chips that can suppress the complexity of the device structure and efficiently process multiple wafers can be provided.

[0028] Effects of the Invention

[0029] According to the present invention, as described above, a plurality of wafers can be processed efficiently while suppressing complication of the apparatus structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a schematic diagram showing an overview of a semiconductor wafer processing system provided with a dicing device and an expanding device according to an embodiment.

[0031] Figure 2 This is a plan view showing a grooving device of a semiconductor wafer processing system according to an embodiment.

[0032] Figure 3 This is a plan view showing a tape applying device of a semiconductor wafer processing system according to an embodiment.

[0033] Figure 4 This is a plan view showing a dicing device of a semiconductor wafer processing system according to an embodiment.

[0034] Figure 5 This is a plan view showing a grinding device of a semiconductor wafer processing system according to an embodiment.

[0035] Figure 6 This is a plan view showing a tape replacing and pasting device of a semiconductor wafer processing system according to an embodiment.

[0036] Figure 7 This is a side view showing a tape replacing and pasting device of a semiconductor wafer processing system according to an embodiment.

[0037] Figure 8 It is a plan view showing an expansion device of a semiconductor wafer processing system according to an embodiment.

[0038] Figure 9 It is a side view showing an expansion device of a semiconductor wafer processing system according to an embodiment.

[0039] Figure 10 This is a flowchart showing a semiconductor chip manufacturing process of the semiconductor wafer processing system according to the embodiment.

[0040] Figure 11 It is a top view showing the laser processing apparatus according to the embodiment.

[0041] Figure 12 It is a side view showing a wafer transfer unit of the laser processing apparatus according to the embodiment.

[0042] Figure 13 It is a plan view for explaining the feeding of wafers by the laser processing apparatus according to the embodiment.

[0043] Figure 14 It is a plan view for explaining the replacement of wafers in the laser processing apparatus according to the embodiment.

[0044] Figure 15 This is a front view for explaining the transfer of a wafer from a conveyor to a wafer holding unit in the laser processing apparatus according to the embodiment.

[0045] Figure 16 This is a front view for explaining the transfer of a wafer from a wafer holding portion to a conveyor in the laser processing apparatus according to the embodiment. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0047] Reference Figures 1 to 16 , the structure of the semiconductor wafer processing system 100 according to the embodiment of the present invention is described.

[0048] (Semiconductor wafer processing system)

[0049] like Figure 1As shown, the semiconductor wafer processing system 100 is a device for processing a wafer We. The semiconductor wafer processing system 100 is configured to form a modified portion on the wafer We and to divide the wafer We along the modified portion to form a plurality of semiconductor chips Ch. Here, the wafer We is a circular thin plate formed by crystals of a semiconductor substance that becomes the material of a semiconductor integrated circuit. Inside the wafer We, a modified portion is formed by internal modification along a dividing line through processing in the semiconductor wafer processing system 100. That is, the wafer We is processed so that it can be divided along the dividing line. Here, the modified portion refers to cracks and gaps formed inside the wafer We by the laser Ld.

[0050] Specifically, semiconductor wafer processing system 100 includes a notching device 1, a tape applying device 2, a dicing device 3, a grinding device 4, a tape replacing and applying device 5, and an expanding device 6. Notching device 1 and dicing device 3 are each an example of a "laser processing device" within the scope of the claims.

[0051] like Figure 1 As shown, in the semiconductor wafer processing system 100 , the wafer We is processed in the order of a slotting device 1 , a tape attaching device 2 , a dicing device 3 , a grinding device 4 , a tape replacing and attaching device 5 , and an expanding device 6 .

[0052] Grooving device

[0053] The slotting device 1 is configured to irradiate the insulating film and inspection pattern by irradiating the insulating film and inspection pattern by laser light Lg along the spacing streets Ws between the semiconductor chips Ch on the circuit surface of the wafer We, which is not equipped with the frame Rf and the protective tape Tb, before the modified portion is formed on the wafer We by the cutting device 3. Here, the laser light Lg is light with a wavelength shorter than that in the infrared region. In addition, the insulating film refers to the interlayer insulating coating of the wafer We. As the interlayer insulating coating material, the insulating film is formed of a low-k material with a relatively low dielectric constant. In addition, the inspection pattern refers to a test conduction pattern used for functional testing of the semiconductor chips Ch on the wafer We. The inspection pattern is the so-called Teg (Test Element Group).

[0054] Specifically, if Figure 2 As shown, the notching apparatus 1 includes a cassette 11, a laser irradiation unit 12, and a circuit surface film cleaning unit 13. The cassette 11 is configured to accommodate a wafer We without a frame Rf and a protective tape Tb attached thereto. The laser irradiation unit 12 is configured to irradiate a laser beam Lg that separates the insulating film and the inspection pattern on the wafer We. The circuit surface film cleaning unit 13 is configured to coat the circuit surface of the wafer We before separating the insulating film and the inspection pattern, and to clean the circuit surface of the wafer We after separating the insulating film and the inspection pattern.

[0055] 〈With adhesive device〉

[0056] The tape sticking device 2 is configured to stick the protective tape Tb to the circuit surface of the wafer We (see Figure 1 ).

[0057] Specifically, if Figure 3 As shown, the tape applying device 2 includes a cassette storage unit 21, a robot 22, a conveying mechanism 23, and a protective tape applying unit 24. The cassette storage unit 21 is configured to accommodate frames Rf, wafers We, and wafers We with frames Rf. The robot 22 is configured to transport frames Rf and wafers We from the cassette storage unit 21 to the conveying mechanism 23, respectively. The robot 22 is configured to transport wafers We with frames Rf from the conveying mechanism 23 to the cassette storage unit 21. The conveying mechanism 23 is configured to transport wafers We to a position of the protective tape applying unit 24 where protective tape Tb can be applied. The protective tape applying unit 24 is configured to apply protective tape Tb to wafers We conveyed by the conveying mechanism 23 and to apply frames Rf to protective tape Tb.

[0058] Cutting device

[0059] The dicing device 3 is configured to form a modified portion for dividing the wafer We inside the wafer We (see Figure 1 ).

[0060] Specifically, if Figure 4 As shown, the cutting device 3 includes a cutting unit 30, a box unit 31, and a wafer conveying unit 32. The cutting unit 30 is configured to irradiate the wafer We with a laser beam Ld having a wavelength that is transparent to the wafer We along the streets Ws (dividing lines). Figure 1 ) to form a modified portion. Here, the laser light Ld has a wavelength in the near-infrared region. The cassette 31 is configured to accommodate multiple wafers We attached to protective tape Tb along with frames Rf. The wafer transport unit 32 is configured to transport the wafers We attached to protective tape Tb along with frames Rf between the cassette 31 and the dicing unit 30.

[0061] Grinding device

[0062] The grinding device 4 is configured to remove the modified portion of the wafer We formed in the dicing device 3 by grinding the wafer We from the surface opposite to the circuit surface side (see Figure 1 ).

[0063] Specifically, if Figure 5 As shown, the grinding device 4 includes a first cassette 41 , a robot 42 , a plurality of suction holding units 43 , a plurality of grinding units 44 , a fine grinding unit 45 , a crystal defect forming unit 46 , a second cassette 47 , and a single rotary table 48 .

[0064] The first cassette 41 is configured to accommodate the wafer We on which the modified portion has been formed in the dicing device 3. The robot 42 is configured to transport the wafer We with the frame Rf attached thereto from the first cassette 41 to the suction holding unit 43 closest to the first cassette 41 among the plurality of suction holding units 43. Furthermore, the robot 42 is configured to transport the wafer We, after the modified portion has been removed and attached to the protective tape Tb along with the frame Rf, from the suction holding unit 43 closest to the second cassette 47 among the plurality of suction holding units 43 to the second cassette 47. The plurality of suction holding units 43 are configured to suction and hold the wafer We attached to the protective tape Tb along with the frame Rf.

[0065] The plurality of grinding sections 44 are configured to grind the back side of the wafer We opposite the circuit surface in stages. The plurality of grinding sections 44 include a rough grinding section 44a, a fine grinding section 44b, and a precision (fine) grinding section 44c. The rough grinding section 44a is configured to grind the back side of the wafer We using a first grinding material having a first particle size. The fine grinding section 44b is configured to grind the back side of the wafer We using a second grinding material having a second particle size smaller than the first particle size. The precision grinding section 44c is configured to grind the back side of the wafer We using a third grinding material having a third particle size smaller than the second particle size.

[0066] The fine grinding section 45 is configured to grind the backside of the wafer We after being ground by the multiple grinding sections 44. The crystal defect forming section 46 is configured to form minute crystal defects on the backside of the wafer We after being ground by the fine grinding section 45. The crystal defect forming section 46 is configured to perform a process called gettering. The second cassette section 47 is configured to accommodate the wafer We on which the crystal defects have been formed by the crystal defect forming section 46. The single rotating table section 48 is configured to rotate and move the multiple adsorption holding sections 43 to positions corresponding to the multiple grinding sections 44, the fine grinding section 45, and the crystal defect forming section 46, respectively.

[0067] 〈With replacement adhesive device〉

[0068] The tape replacement and pasting device 5 is configured to, after the modified portion is removed from the wafer We in the grinding device 4, paste the expansion tape Te on the surface of the wafer We opposite to the circuit surface, and peel off the protective tape Tb pasted on the circuit surface of the wafer We (see Figure 1 ).

[0069] Specifically, if Figure 6 As shown, the tape replacement and pasting device 5 includes a box storage unit 51, a robot 52, a conveying mechanism 53, an expansion tape pasting unit 54, and an ultraviolet irradiation unit 55 (see Figure 7 ) and a protective tape peeling portion (not shown).

[0070] The cassette storage portion 51 is configured to be able to store wafers We affixed to the protective tape Tb together with the frame Rf and wafers We affixed to the expansion tape Te together with the frame Rf.

[0071] The robot 52 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf from the cassette storage portion 51 to the transport mechanism 53. The transport mechanism 53 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf to the expansion tape attachment portion 54. The expansion tape attachment portion 54 is configured to attach the frame Rf and the wafer We to the protective tape Tb and the expansion tape Te by attaching the expansion tape Te to the surface of the frame Rf opposite to the surface to which the protective tape Tb is attached.

[0072] The robot 52 is configured to transport the wafer We, attached to the protective tape Tb and the expansion tape Te along with the frame Rf, from the transport mechanism 53 to the ultraviolet irradiation unit 55. The ultraviolet irradiation unit 55 is located within a sealed structure with a door at the entrance and exit. After nitrogen is removed from the atmosphere by nitrogen purging and the interior is filled with nitrogen (nitrogen is supplied to the interior, oxygen is expelled, and nitrogen is then filled), ultraviolet light is irradiated toward the surface of the frame Rf to which the protective tape Tb is attached. This cures the adhesive layer of the protective tape Tb. The robot 52 is configured to return the wafer We, attached to the protective tape Tb and the expansion tape Te along with the frame Rf, from the ultraviolet irradiation unit 55 to the transport mechanism 53.

[0073] The transport mechanism 53 is configured to transport the wafer We attached to the protective tape Tb and the expansion tape Te together with the frame Rf to the protective tape peeling unit. The protective tape peeling unit is configured to peel off the protective tape Tb (see Figure 1 The robot arm 52 is configured to receive the wafer We attached to the expansion tape Te together with the frame Rf from the transport mechanism 53 into the cassette storage unit 51 .

[0074] 〈Expansion Device〉

[0075] The expansion device 6 is configured to bond the expansion tape Te to the surface of the wafer We opposite to the circuit surface and then expand the expansion tape Te to divide the wafer We into a plurality of semiconductor chips Ch (see FIG. Figure 1 ).

[0076] Specifically, if Figure 8 and Figure 9 As shown, the expansion device 6 includes a box portion 601, a lifting hand 602, an adsorption hand 603, and a cold air supply portion 604 (see Figure 9 ), cooling unit 605, expansion portion 606, expansion maintaining member 607, heat shrink portion 608 (refer to Figure 9 )、ultraviolet irradiation unit 609 (refer to Figure 9 ), scraper portion 610 and clamping portion 611.

[0077] The box portion 601 is configured to accommodate a wafer ring structure W having a frame Rf and wafers We attached to the expansion tape Te. The lifting hand 602 is configured to remove the wafer ring structure W from the box portion 601. The lifting hand 602 is configured to accommodate the wafer ring structure W in the box portion 601. The suction hand 603 is configured to suction the frame Rf of the wafer ring structure W from above. The cold air supply portion 604 is configured to supply cold air from above to the expansion tape Te when the expansion portion 606 is expanding the expansion tape Te.

[0078] The cooling unit 605 is configured to cool the expansion tape Te from below. The expansion unit 606 is configured to expand the expansion tape Te of the wafer ring structure W along the streets Ws (see FIG. Figure 1 ) to divide the wafer We. The expansion maintaining member 607 is configured to press the expansion tape Te from above to prevent the expansion tape Te near the wafer We from shrinking due to the heating of the heat shrink unit 608. The heat shrink unit 608 is configured to shrink the expansion tape Te expanded by the expansion unit 606 by heating while maintaining the gaps between the plurality of semiconductor chips Ch. The ultraviolet irradiation unit 609 is configured to irradiate the expansion tape Te with ultraviolet light to reduce the adhesive strength of the adhesive layer of the expansion tape Te.

[0079] The scraper portion 610 is configured to partially press the wafer We from below after expanding the expansion tape Te, thereby further dividing the wafer We along the reforming portion. The clamping portion 611 is configured to be able to move the wafer ring structure W in the vertical direction while holding the frame Rf of the wafer ring structure W. The clamping portion 611 is configured to be able to move the wafer ring structure W in the direction from the cooling unit 605 toward the expansion portion 606 and in the direction from the expansion portion 606 toward the cooling unit 605 while holding the frame Rf of the wafer ring structure W.

[0080] (Semiconductor chip manufacturing process)

[0081] Reference Figure 10 , the overall operation of the semiconductor wafer processing system 100 is described below.

[0082] In step S1, the insulating film and inspection pattern are separated in the notching device 1. Specifically, the laser irradiation unit 12 irradiates the insulating film and inspection pattern by irradiating laser light Lg along the streets Ws between the semiconductor chips Ch on the circuit surface of the wafer We that are not attached to the protective tape Tb along with the frame Rf, thereby separating the insulating film and inspection pattern. In step S2, the wafer We and the frame Rf are attached to the protective tape Tb in the tape attachment device 2. Specifically, the protective tape attachment unit 24 attaches the protective tape Tb to the wafer We being transported by the transport mechanism 23 and also attaches the frame Rf to the protective tape Tb.

[0083] In step S3, the modified portion is formed on the wafer We in the dicing device 3. That is, the dicing unit 30 irradiates the wafer We with laser light Ld along the streets Ws (see FIG. Figure 1 ), thereby forming a modified portion. In step S4, the modified portion is removed from the wafer We in the grinding device 4. That is, the multiple grinding units 44 remove the modified portion of the wafer We by grinding the back surface of the wafer We opposite to the circuit surface in stages. In step S5, the protective tape Tb is peeled off in the tape replacement and pasting device 5, and the wafer We and the frame Rf are pasted on the expansion tape Te. That is, after peeling the protective tape Tb from the wafer We with the frame Rf, the expansion tape pasting unit 54 attaches the expansion tape Te to the wafer We from which the protective tape Tb has been peeled off, and also pastes the frame Rf on the expansion tape Te.

[0084] In step S6, the expanding tape Te is expanded in the expanding device 6, dividing the wafer We into a plurality of semiconductor chips Ch. Specifically, the clamping portion 611 is lowered while holding the frame Rf, causing the expanding tape Te, which is in contact with the expanding portion 606, to be pulled downward, thereby expanding the expanding tape Te. Consequently, the tensile force generated by the expanding tape Te causes the wafer We to be divided along the cracks formed in the streets Ws, thereby dividing the wafer We into a plurality of semiconductor chips Ch.

[0085] After step S6, the semiconductor chip manufacturing process ends.

[0086] (Overview of laser processing equipment)

[0087] like Figure 11 As shown, the processing system 100 includes a laser processing device 7 for performing laser processing. The laser processing device 7 is, for example, a dicing device 3 for dicing a wafer We into a plurality of semiconductor chips or a grooving device 1 for grooving an insulating film formed on the wafer We.

[0088] like Figure 11As shown, the laser processing apparatus 7 includes a wafer storage unit 71 , a wafer transfer unit 72 , a laser irradiation unit 73 , a wafer holding unit 74 , a wafer transport unit 75 , a conveyor 76 , a control unit 77 , and doors 78 a and 78 b .

[0089] Furthermore, the wafer transfer unit 75 of the laser processing apparatus 7 includes a first transfer unit 75 a and a second transfer unit 75 b .

[0090] The wafer storage section 71 can store a plurality of wafers We. Specifically, the wafer storage section 71 is provided with a plurality of storage spaces along the vertical direction. In other words, the wafer storage section 71 can store a plurality of wafers We along the vertical direction.

[0091] The wafer transfer unit 72 pulls the wafer We horizontally from the wafer storage unit 71 and transfers the wafer We to a predetermined position. Specifically, the wafer transfer unit 72 pulls the wafer We from the wafer storage unit 71 onto the conveyor 76. Furthermore, the wafer transfer unit 72 transfers the processed wafer We horizontally and stores it in the wafer storage unit 71. Specifically, the wafer transfer unit 72 pushes the wafer We on the conveyor 76 into the wafer storage unit 71.

[0092] Doors 78a and 78b are arranged so as to sandwich wafer storage section 71 in the front-to-back direction of wafer storage section 71. Door 78a is provided to separate the exterior of laser processing apparatus 7 from the interior of laser processing apparatus 7, where wafer storage section 71 is located. Door 78b is provided to separate the space where wafer storage section 71 is located from the space where laser irradiation section 73 is located and where laser processing of wafers We is performed. In other words, the exterior of laser processing apparatus 7 and the space where laser processing is performed are separated by the dual arrangement of doors 78a and 78b.

[0093] Door 78a is opened when wafer storage section 71 is brought in and out of laser processing apparatus 7 from the outside. Door 78b is opened when wafers We are brought in and out of wafer storage section 71 relative to conveyor 76. Doors 78a and 78b are controlled by control section 77 so that they do not open simultaneously. Specifically, when door 78a is opened, door 78b is closed. Alternatively, door 78b is opened when door 78a is closed.

[0094] By providing dual doors, namely, doors 78a and 78b, it is possible to continue processing the wafer We while replacing the wafer storage unit 71 while either the first transport unit 75a or the second transport unit 75b of the wafer transport unit 75 is holding the wafer We. That is, when the first transport unit 75a, the second transport unit 75b, the wafer holding unit 74, or a plurality of these portions of the wafer transport unit 75 is holding the wafer We, the wafer storage unit 71 can be opened and closed to allow access to the outside. In this case, both the processed wafer We and the unprocessed wafer We can be transported by the first transport unit 75a and the second transport unit 75b of the wafer transport unit 75, without interrupting the laser processing of the wafer We. Then, after replacing the wafer storage unit 71 via the open door 78a, the door 78a is closed and the door 78b is opened to allow access to the wafer storage unit 71.

[0095] Laser irradiation unit 73 processes wafer We by irradiating it with laser light. Specifically, laser irradiation unit 73 includes a laser light source that generates laser light and optical components that adjust the laser's optical axis direction and focal position. Furthermore, a camera is provided near laser irradiation unit 73 to capture the laser processing status.

[0096] For example, when the laser processing device 7 is a dicing device 3, the laser irradiation unit 73 is configured to perform dicing processing for dividing the wafer We into a plurality of semiconductor chips. Alternatively, when the laser processing device 7 is a grooving device 1, the laser irradiation unit 73 is configured to perform grooving processing for dividing the insulating film provided on the wafer We.

[0097] The wafer holding unit 74 holds the wafer We while being processed by the laser irradiation unit 73. Specifically, the wafer holding unit 74 suctions and holds the wafer We placed on the upper surface. If the wafer We has a ring frame, the wafer holding unit 74 suctions the portion corresponding to the wafer We, sandwiching and holding the ring frame. Furthermore, the wafer holding unit 74 is movable horizontally and rotatable about a vertical axis of rotation. This allows adjustment of the position of the laser beam emitted by the laser irradiation unit 73 onto the wafer We.

[0098] The wafer transport unit 75 transports the wafer We to the single wafer holding unit 74 . Specifically, the wafer transport unit 75 delivers the wafer We before laser processing to the single wafer holding unit 74 for transport, and receives and transports the wafer We after laser processing from the single wafer holding unit 74 .

[0099] Specifically, the wafer transport unit 75 is configured to receive processed wafers We from a single wafer holding unit 74 via one of the first transport unit 75a and the second transport unit 75b, and to deliver unprocessed wafers We to the single wafer holding unit 74 via the other of the first transport unit 75a and the second transport unit 75b. For example, the wafer transport unit 75 delivers unprocessed wafers We to the single wafer holding unit 74 via the first transport unit 75a. Furthermore, the wafer transport unit 75 receives processed wafers We from the single wafer holding unit 74 via the second transport unit 75b.

[0100] The conveyor 76 transports the wafer We pulled out from the wafer storage section 71. Specifically, the conveyor 76 transports the wafer We pulled out from the wafer storage section 71 by the wafer transfer section 72 in the pulling direction. The conveyor 76 transports the unprocessed wafer We from the position where it was pulled out from the wafer storage section 71 to directly below the first transport section 75a of the wafer transport section 75. In addition, the conveyor 76 receives the processed wafer We from the second transport section 75b of the wafer transport section 75 and transports it in a manner that returns to the position near the wafer storage section 71 from which the wafer We was pulled out. In addition, a pair of conveyors 76 are provided so as to extend along the transport direction.

[0101] like Figure 11 and Figure 12 As shown, the first transfer unit 75a and the second transfer unit 75b of the wafer transfer unit 75 are arranged adjacent to each other in the horizontal direction. Specifically, the first transfer unit 75a and the second transfer unit 75b are arranged adjacent to each other along the conveying direction of the conveyor 76. In addition, the first transfer unit 75a and the second transfer unit 75b of the wafer transfer unit 75 are arranged above the wafer holding unit 74.

[0102] In addition, if Figure 12 As shown, the wafer transport unit 75 includes a common lifting mechanism 751 for raising and lowering both the first transport unit 75a and the second transport unit 75b. Furthermore, the wafer transport unit 75 includes cylinders 752a and 752b and suction hands 753a and 753b. Specifically, the first transport unit 75a is provided with a cylinder 752a that independently moves the suction hand 753a in the vertical direction. Furthermore, the second transport unit 75b is provided with a cylinder 752b that independently moves the suction hand 753b in the vertical direction.

[0103] The lifting mechanism 751 moves both the first conveying unit 75a (cylinder 752a and suction hand 753a) and the second conveying unit 75b (cylinder 752b and suction hand 753b) vertically simultaneously. The lifting mechanism 751 includes a servo motor and is driven vertically by the control unit 77.

[0104] The suction hand 753a of the first transfer unit 75a suctions and holds the wafer We by negative pressure. The cylinder 752a of the first transfer unit 75a expands and contracts by air pressure, moving the suction hand 753a connected to the top end in the vertical direction.

[0105] The suction hand 753b of the second transport unit 75b sucks and holds the wafer We by negative pressure. The cylinder 752b of the second transport unit 75b expands and contracts by air pressure, moving the suction hand 753b connected to the top end in the vertical direction.

[0106] Furthermore, the wafer transfer unit 75 does not move the first transfer unit 75 a and the second transfer unit 75 b in the horizontal direction, and moves the first transfer unit 75 a and the second transfer unit 75 b upward and downward integrally using the lifting mechanism 751 .

[0107] The conveyor 76 is configured to retreat to a position where it does not interfere with the wafer transport unit 75 when transferring a wafer We between the first transport unit 75a or the second transport unit 75b of the wafer transport unit 75 and the wafer holding unit 74. For example, the conveyor 76 can retreat to a position where it does not interfere by rotating. Alternatively, the conveyor 76 can retreat to a position where it does not interfere by moving outward in the directions in which the pair of conveyors 76 face each other.

[0108] The control unit 77 is configured to control various components of the laser processing device 7. The control unit 77 includes a CPU (Central Processing Unit) and a storage unit including a ROM (Read Only Memory), a RAM (Random Access Memory), and an SSD (Solid State Drive). The storage unit stores a control program for controlling the laser processing device 7.

[0109] The control unit 77 is configured to perform the following control: the processed wafer We received from the wafer holding unit 74 is delivered to the conveyor 76 by one of the first conveying unit 75a and the second conveying unit 75b, and the unprocessed wafer We received from the conveyor 76 is delivered to the wafer holding unit 74 by the other of the first conveying unit 75a and the second conveying unit 75b.

[0110] Specifically, if Figure 13 As shown in FIG. 1 , the control unit 77 controls the supply of wafers We from the wafer storage unit 71 to the wafer holding unit 74. Figure 13 In (A), the control unit 77 pulls the wafer We from the wafer storage unit 71 to the conveyor 76 via the wafer transfer unit 72. Figure 13In (B), the control unit 77 transfers the wafer We1 on the conveyor 76 via the wafer transfer unit 72 to directly below the first transfer unit 75a of the wafer transport unit 75. The control unit 77 then causes the first transfer unit 75a of the wafer transport unit 75 to suction and hold the wafer We1 directly below, retracts the wafer transfer unit 72 to a position where it does not interfere with the transfer of the wafer We1, and raises the first transfer unit 75a.

[0111] exist Figure 13 In (C), the control unit 77 moves the wafer holding unit 74 to directly below the first transfer unit 75 a (wafer We1 ) of the wafer transfer unit 75 . The wafer We1 held by the first transfer unit 75 a is then transferred to the wafer holding unit 74 directly below.

[0112] exist Figure 13 In (D), the control unit 77 moves the wafer holding unit 74 holding the wafer We1 to a processing position where the laser irradiation unit 73 performs laser processing on the wafer We1. The control unit 77 then irradiates the wafer We1 held by the wafer holding unit 74 with laser light from the laser irradiation unit 73 to perform processing.

[0113] While the wafer We1 held by the wafer holding portion 74 is being processed, the control portion 77 controls the wafer We2 to be prepared for laser processing next. Figure 13 In (E), while processing wafer We1, control unit 77 uses wafer transfer unit 72 to pull wafer We2 from wafer storage unit 71 onto conveyor 76. Furthermore, control unit 77 uses wafer transfer unit 72 to transfer wafer We2 on conveyor 76 to directly below first transfer unit 75a of wafer transport unit 75. Then, control unit 77 uses first transfer unit 75a of wafer transport unit 75 to suction and hold wafer We2 directly below.

[0114] like Figure 14 As shown, when the laser processing of the previous wafer We1 is completed, the control unit 77 replaces the wafer We1 and the wafer We2 on the wafer holding unit 74 and performs the laser processing on the next wafer We2.

[0115] exist Figure 14 In (A), the laser processing of the wafer We1 held by the wafer holding portion 74 is completed. Figure 14 In (B), the control unit 77 moves the wafer holding unit 74 to a position directly below the second transfer unit 75b of the wafer transfer unit 75. The control unit 77 then transfers the wafer We1 from the wafer holding unit 74 to the second transfer unit 75b located directly above. At this point, the control unit 77 retracts the conveyor 76 to a position where it does not interfere with the transfer of the wafer We1.

[0116] exist Figure 14 In (C), the control unit 77 moves the wafer holding unit 74 to a position directly below the first transfer unit 75a (wafer We2) of the wafer transfer unit 75. The control unit 77 then transfers the wafer We2 held by the first transfer unit 75a to the wafer holding unit 74 located directly below. At this point, the control unit 77 retracts the conveyor 76 to a position where it does not interfere with the transfer of the wafer We2.

[0117] exist Figure 14 In (D), the control unit 77 moves the wafer holding unit 74 holding the wafer We2 to a processing position where the laser irradiation unit 73 performs laser processing on the wafer We2. Then, the control unit 77 irradiates the wafer We2 held by the wafer holding unit 74 with laser light from the laser irradiation unit 73 to perform processing.

[0118] While the wafer We2 held in the wafer holding portion 74 is being processed, the control portion 77 controls the wafer We1 that has been processed to be stored in the wafer storage portion 71 and prepares the wafer We3 that will be laser processed next. Figure 14 In (E), the control unit 77 transfers the wafer We2 from the second transfer unit 75 b of the wafer transfer unit 75 to the conveyor 76 while processing the wafer We2. The control unit 77 then uses the wafer transfer unit 72 to transfer the wafer We2 on the conveyor 76 to the wafer storage unit 71.

[0119] Then, in Figure 14 In (F), the control unit 77 pulls the wafer We3 from the wafer storage unit 71 onto the conveyor 76 via the wafer transfer unit 72. Furthermore, the control unit 77 transfers the wafer We3 on the conveyor 76 via the wafer transfer unit 72 to directly below the first transfer unit 75a of the wafer transport unit 75. The control unit 77 then uses the first transfer unit 75a of the wafer transport unit 75 to suction and hold the wafer We3 directly below.

[0120] The control unit 77 repeatedly performs Figure 14 The processes (A) to (F) are performed on multiple wafers We in sequence by laser processing.

[0121] In addition, when the control unit 77 moves the wafer We on the conveyor 76 to the wafer holding unit 74, as shown in FIG. Figure 15 As shown, the wafer transfer unit 75 is operated.

[0122] exist Figure 15 In (A), the control unit 77 moves the wafer We to the position directly below the first transfer unit 75a of the wafer transfer unit 75. Figure 15In (B), the control unit 77 extends the cylinder 752 a to bring the suction hand 753 a into contact with the wafer We. Then, the control unit 77 applies negative pressure to the suction hand 753 a to suction the wafer We on the conveyor 76 .

[0123] exist Figure 15 In (C), the control unit 77 contracts the cylinder 752 a to lift the wafer We adsorbed by the adsorption hand 753 a . Then, the control unit 77 retracts the conveyor 76 .

[0124] exist Figure 15 In (D), the control unit 77 lowers the lifting mechanism 751 to lower the wafer We adsorbed on the adsorption hand 753a. Figure 15 In (E), the control unit 77 extends the cylinder 752 a to place the wafer We adsorbed by the adsorption hand 753 a on the wafer holding unit 74 .

[0125] Then, the control unit 77 causes the wafer holding unit 74 to suction and hold the wafer We. In addition, the control unit 77 releases the negative pressure of the suction hand 753a, thereby releasing the suction of the wafer We by the suction hand 753a.

[0126] exist Figure 15 In (F), the control unit 77 contracts the cylinder 752 a to move the suction hand 753 a upward.

[0127] In addition, when the control unit 77 moves the wafer We on the wafer holding unit 74 to the conveyor 76, as shown in FIG. Figure 16 As shown, the wafer transfer unit 75 is operated.

[0128] exist Figure 16 In (A), the control unit 77 moves the wafer holding unit 74 holding the wafer We to the position directly below the second transfer unit 75b of the wafer transfer unit 75. At this time, the control unit 77 retracts the conveyor 76. Figure 16 In (B), the control unit 77 extends the cylinder 752b, causing the suction hand 753b to contact the wafer We on the wafer holder 74. The control unit 77 then applies negative pressure to the suction hand 753b, causing the suction hand 753b to suction the wafer We on the wafer holder 74. The suction of the wafer holder 74 is then released, and the process waits until the negative pressure maintained by the wafer holder 74 is released.

[0129] exist Figure 16 In (C), the control unit 77 raises the lifting mechanism 751 to raise the wafer We adsorbed on the adsorption hand 753b. Figure 16 In (D), the control unit 77 returns the conveyor 76 from the retracted position.

[0130] The control unit 77 releases the negative pressure of the suction hand 753b, and releases the suction of the wafer We by the suction hand 753b. Figure 16 In (E), the control unit 77 contracts the cylinder 752 b to move the suction hand 753 b upward.

[0131] (Effects of this embodiment)

[0132] In this embodiment, the following effects can be obtained.

[0133] In this embodiment, as described above, the wafer transport unit 75 for transporting the wafer We relative to the single wafer holding unit 74 includes a first transport unit 75a and a second transport unit 75b. Thus, while the wafer We held by the single wafer holding unit 74 is being processed by the laser irradiation unit 73, the next wafer We can be transported and prepared by one of the first transport unit 75a and the second transport unit 75b. Then, when the processing of the wafer We held by the wafer holding unit 74 is completed, the processed wafer We can be received from the wafer holding unit 74 by the other of the first transport unit 75a and the second transport unit 75b, and the prepared wafer We can be handed over to the wafer holding unit 74 by one of the first transport unit 75a and the second transport unit 75b. Thus, when the wafer We is processed by the single wafer holding unit 74, the standby time of the laser irradiation unit 73 can be suppressed from being prolonged, so that multiple wafers We can be processed efficiently. Furthermore, since there is no need to provide two laser irradiation units 73 and two wafer holding units 74, the device structure can be suppressed from becoming complicated. As a result, a plurality of wafers We can be processed efficiently while suppressing the complexity of the device structure.

[0134] Furthermore, in this embodiment, as described above, the wafer transport unit 75 is configured to receive the processed wafer We from the single wafer holding unit 74 via one of the first transport unit 75a and the second transport unit 75b, and to deliver the unprocessed wafer We to the single wafer holding unit 74 via the other of the first transport unit 75a and the second transport unit 75b. Thus, the processed wafer can be quickly received from the wafer holding unit 74 via the first transport unit 75a and the second transport unit 75b, and then the wafer We to be processed next can be quickly delivered to the wafer holding unit 74.

[0135] In addition, in this embodiment, as described above, the first transport unit 75a and the second transport unit 75b of the wafer transport unit 75 are arranged adjacent to each other in the horizontal direction. Therefore, after the wafer We is received from the wafer holding unit 74 by one of the first transport unit 75a and the second transport unit 75b, the wafer We can be quickly transferred to the wafer holding unit 74 by the other of the first transport unit 75a and the second transport unit 75b that is adjacent to each other in the horizontal direction.

[0136] Furthermore, in this embodiment, as described above, the first transport unit 75a and the second transport unit 75b of the wafer transport unit 75 are arranged above the wafer holding unit 74. Thus, the first transport unit 75a and the second transport unit 75b can be moved relative to the wafer holding unit 74 to transport the wafer We. This can prevent the overall area (installation area) of the device from increasing in size when viewed from above.

[0137] In addition, in this embodiment, as described above, the wafer transfer unit 75 includes a common lifting mechanism 751 for lifting both the first transfer unit 75a and the second transfer unit 75b. This can suppress an increase in the number of components compared to a case where separate lifting mechanisms are provided for lifting the first transfer unit 75a and the second transfer unit 75b.

[0138] Furthermore, in this embodiment, as described above, the wafer transport unit 75 does not move the first transport unit 75a and the second transport unit 75b in the horizontal direction, and the first transport unit 75a and the second transport unit 75b are raised and lowered integrally by the lifting mechanism 751. Thus, the wafer transport unit 75 only needs to be provided with a lifting mechanism that moves the first transport unit 75a and the second transport unit 75b in the vertical direction integrally, thereby preventing the structure of the wafer transport unit 75 from becoming complicated.

[0139] In addition, as described above, the present embodiment further includes: a wafer storage section 71 capable of storing a plurality of wafers We; a conveyor 76 for transporting wafers We pulled out from the wafer storage section 71; and a control section 77 configured to control the conveyor 76 to deliver processed wafers We received from the wafer holding section 74 by one of the first transport section 75a and the second transport section 75b, and to deliver unprocessed wafers We received from the conveyor 76 to the wafer holding section 74 by the other of the first transport section 75a and the second transport section 75b. Thus, both the first transport section 75a and the second transport section 75b can be used to transport unprocessed wafers We and processed wafers We between the conveyor 76 and the wafer holding section 74, thereby enabling the wafers We to be transported quickly and efficiently to and from the wafer holding section 74.

[0140] Furthermore, in the present embodiment, as described above, the conveyor 76 is configured to retreat to a position where it does not interfere with the wafer conveyor 75 when the wafer We is transferred between the first conveyor 75a or the second conveyor 75b of the wafer conveyor 75 and the wafer holding portion 74. Thus, when the wafer We is transferred between the first conveyor 75a or the second conveyor 75b and the wafer holding portion 74, the conveyor 76 retreats to a position where it does not interfere, making it possible to easily transfer the wafer We to the wafer holding portion 74.

[0141] In this embodiment, as described above, the laser irradiation unit 73 is configured to perform dicing for dividing the wafer We into a plurality of semiconductor chips. This can suppress the complexity of the device structure for dicing the wafer We and efficiently dicing a plurality of wafers We.

[0142] In this embodiment, as described above, the laser irradiation unit 73 is configured to perform grooving to separate the insulating film provided on the wafer We. This can suppress the complexity of the device structure for grooving the wafer We and efficiently perform grooving on multiple wafers We.

[0143] [Modification]

[0144] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The scope of the present invention is not indicated by the description of the embodiments described above but by the scope of the claims, and includes all modifications (variations) within the meaning and scope equivalent to the scope of the claims.

[0145] For example, in the above embodiment, the wafer transport unit includes two transport units (a first transport unit and a second transport unit), but the present invention is not limited thereto. In the present invention, the wafer transport unit may include three or more transport units.

[0146] In addition, in the above embodiment, an example of a structure in which a single wafer holding unit is provided in the laser processing apparatus is shown, but the present invention is not limited thereto. In the present invention, a plurality of wafer holding units may be provided in the laser processing apparatus. In this case, a plurality of transport units for transporting wafers may be provided for each wafer holding unit.

[0147] In addition, in the above embodiment, an example of a structure in which the wafer transport unit sucks and holds the wafer from above is shown, but the present invention is not limited to this. In the present invention, the wafer transport unit may also grip and hold the wafer.

[0148] In addition, in the above-mentioned embodiment, an example of a structure in which the wafer holding part does not move in the horizontal direction is shown, but the present invention is not limited thereto. In the present invention, a structure in which the wafer holding part moves in the horizontal direction is also possible.

[0149] Description of labels

[0150] 1. Slotting device (laser processing device);

[0151] 3. Cutting device (laser processing device);

[0152] 7. Laser processing equipment;

[0153] 12. Laser irradiation part;

[0154] 30 cutting portion (laser irradiation portion);

[0155] 71 wafer storage unit;

[0156] 73 laser irradiation unit;

[0157] 74 wafer holding portion;

[0158] 75 Wafer handling department;

[0159] 75a First transport section;

[0160] 75b Second transport section;

[0161] 76 conveyors;

[0162] 77 Control Department;

[0163] 751 lifting mechanism;

[0164] Ch semiconductor chip;

[0165] We wafer.

Claims

1. A laser processing device, wherein: have: The laser irradiation unit irradiates the wafer with laser for processing; a wafer holding portion for holding the wafer while being processed by the laser irradiation portion; and The wafer transport unit transports the wafer relative to the single wafer holding unit. The wafer transport unit includes a first transport unit and a second transport unit.

2. The laser processing device according to claim 1, wherein: The wafer transport unit is configured to receive processed wafers from the single wafer holding unit through one of the first transport unit and the second transport unit, and to deliver unprocessed wafers to the single wafer holding unit through the other of the first transport unit and the second transport unit.

3. The laser processing device according to claim 1, wherein The first transfer unit and the second transfer unit of the wafer transfer unit are arranged adjacent to each other in a horizontal direction.

4. The laser processing device according to claim 1, wherein The first transfer unit and the second transfer unit of the wafer transfer unit are arranged above the wafer holding unit.

5. The laser processing device according to claim 1, wherein The wafer transfer unit includes a common lifting mechanism for lifting and lowering both the first transfer unit and the second transfer unit.

6. The laser processing device according to claim 5, wherein: The wafer transport unit does not move the first transport unit and the second transport unit in the horizontal direction, and the first transport unit and the second transport unit are integrally elevated by the elevation mechanism.

7. The laser processing device according to claim 1, wherein Also features: A wafer storage section capable of storing multiple wafers; a conveyor for transporting the wafers pulled out from the wafer storage portion; and Control Department, The control unit is configured to perform the following control: the processed wafer received from the wafer holding unit is delivered to the conveyor through one of the first conveying unit and the second conveying unit, and the unprocessed wafer received from the conveyor is delivered to the wafer holding unit through the other of the first conveying unit and the second conveying unit.

8. The laser processing device according to claim 7, wherein: The transport mechanism is configured to retreat to a position where it does not interfere with the wafer transport unit when transferring a wafer between the first transport unit or the second transport unit of the wafer transport unit and the wafer holding unit.

9. The laser processing device according to claim 1, wherein: The laser irradiation unit is configured to perform a dicing process for dividing a wafer into a plurality of semiconductor chips.

10. The laser processing device according to claim 1, wherein The laser irradiation unit is configured to perform a groove process for dividing an insulating film provided on a wafer.

11. A laser processing method, wherein: Including the following steps: A process of processing a wafer by irradiating it with laser light from a laser irradiation unit; A step of holding a wafer by a wafer holding portion while the wafer is being processed by the laser irradiation portion; and The step of transferring the wafer to the single wafer holding portion by a wafer transfer unit includes a first transfer unit and a second transfer unit.

12. A semiconductor chip manufactured by a laser processing device. The laser processing device includes: a laser irradiation unit that irradiates a wafer with laser light for processing; a wafer holding unit that holds the wafer while being processed by the laser irradiation unit; and a wafer transport unit that transports the wafer relative to the single wafer holding unit, the wafer transport unit including a first transport unit and a second transport unit.

13. A method for manufacturing a semiconductor chip, wherein: Including the following steps: A process of processing a wafer by irradiating it with laser light from a laser irradiation unit; A step of holding a wafer by a wafer holding portion while the wafer is being processed by the laser irradiation portion; and a step of transferring the wafer to the single wafer holding portion by a wafer transfer unit, wherein the wafer transfer unit includes a first transfer unit and a second transfer unit; and The process of dividing a wafer into multiple semiconductor chips.

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