Diamond high-pressure inclusion and method for preparing the same

Abstract

The present application relates to the technical field of new materials, and provides a diamond high-pressure inclusion and a preparation method thereof.The diamond high-pressure inclusion comprises a diamond high-pressure capsule and a solid high-pressure state material in the diamond high-pressure capsule; the high-pressure state material is a material in a state of a pressure greater than 1 atm; the preparation method comprises the following steps: obtaining by high-temperature and high-pressure treatment with a target material and a carbon material in a form of a film as main raw materials; the target material is distributed between two adjacent layers of the carbon material in the form of a film; the high-temperature and high-pressure treatment makes the carbon material transform into the diamond high-pressure capsule for wrapping the high-pressure state target material. According to the present application, the carbon material in a form of a film is used as a raw material, the internal pressure state of the synthesized diamond inclusion, the particle size, the volume fraction, the spatial distribution state and the like of the wrapped material can be adjusted according to requirements, and then the batch preparation of the diamond high-pressure inclusion composite material with high controllability is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of new materials, and relates to a diamond high-pressure inclusion and a preparation method thereof. BACKGROUND

[0002] Natural diamond high-pressure inclusions are derived from geological minerals, and are formed because natural diamond captures inclusion materials under high pressure during formation in a mantle environment and carries them to the earth's surface to be discovered. The extremely high strength of diamond enables the inclusion to maintain a high pressure of the underground environment to a certain extent when it is brought to the surface environment, so that the material structure and properties of the high-pressure state can be preserved in the form of the inclusion in the normal pressure environment, thus having great research value and application value. However, the material types and forms of natural diamond inclusions cannot be artificially controlled, and are very rare and difficult to obtain.

[0003] A patent with the application number 220210515692.8 discloses a method for preparing high-pressure state materials that can be separated from a high-pressure device. In this technology, carbon materials are mechanically mixed with target materials, and then are converted into diamond high-pressure inclusions under high temperature and high pressure. Although this method is simple, the carbon materials and target materials are not easy to mix uniformly, resulting in that the spatial distribution and particle size of the high-pressure state materials in the obtained inclusions are difficult to control, and the success rate of complete encapsulation of the target materials is limited.

[0004] In view of this, the present application is proposed. SUMMARY

[0005] The present application provides a diamond high-pressure inclusion and a preparation method thereof, to solve the defects in the prior art that the spatial distribution and particle size of the high-pressure state materials in the diamond high-pressure inclusion are difficult to control, and the success rate of complete encapsulation of the target materials is limited.

[0006] In a first aspect, the present application provides a preparation method of a diamond high-pressure inclusion, the diamond high-pressure inclusion comprising a diamond high-pressure cabin and a solid high-pressure state material in the diamond high-pressure cabin; the high-pressure state material comprises a material under a pressure greater than 1 atmosphere; the preparation method comprises: using a solid target material and a carbon material in a film form of two or more layers as main raw materials for high temperature and high pressure treatment; the target material is encapsulated in a certain spatial distribution and / or a certain size between adjacent two layers of the carbon material in the film form.

[0007] The high temperature and high pressure treatment converts the carbon material into the diamond high-pressure cabin encapsulating the high-pressure state material.

[0008] The present application firstly wraps a certain spatial distribution and / or a certain size of the target material between two adjacent layers of the thin film shaped carbon material, and the structure as a whole can be recorded as a composite thin film. The composite thin film is used as the main raw material for high temperature and high pressure treatment, so as to realize the control of the spatial distribution and / or the particle size of the high-pressure state material in the diamond high-pressure inclusion by taking advantage of the technical advantages of the thin film preparation process and the technical characteristics of the high temperature and high pressure treatment for changing carbon into diamond.

[0009] The carbon material suitable for the present application includes but is not limited to one or more than two combinations of graphite, carbon black, graphene, fullerene, carbon nanotube, glassy carbon and amorphous carbon.

[0010] The target material suitable for the present application includes but is not limited to metal, ceramic and semiconductor material.

[0011] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the thin film shaped carbon material completely wraps the target material before the high temperature and high pressure treatment, and there is no gap between the two adjacent layers of the wrapped thin film shaped carbon material.

[0012] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the preparation of the raw material includes: first arranging the target material on the thin film shaped carbon material, and then arranging the thin film shaped carbon material.

[0013] The thin film shaped carbon material is formed by a thin film preparation process, and the thin film preparation process includes one or more than two of physical vapor deposition, chemical vapor deposition, atomic layer deposition and wet chemical method.

[0014] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the total thickness of the composite thin film composed of two adjacent layers of the thin film shaped carbon material and the target material therebetween is D, and the value range of D is 10 nm-50 μm.

[0015] The thickness of one layer of the thin film shaped carbon material is d, and d is greater than or equal to 30% of D.

[0016] According to the diamond high-pressure inclusion provided by the present application, the form of the target material includes one or more than two combinations of particles, rods and flakes.

[0017] Preferably, the target material includes monodisperse nanoparticles.

[0018] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the high temperature and high pressure treatment includes:

[0019] The raw material is treated under the condition of 15-100 GPa and 1200-2500 ℃.

[0020] Preferably, the raw material is treated at 15-100 GPa and 1200-2500℃ for 1-20 minutes.

[0021] In the high-temperature and high-pressure process of the present application, methods for generating high temperature can be used, including but not limited to resistance heating, laser heating and other methods.

[0022] The present application uses thin film carbon material as one of the raw materials, and can control the structure (phase) and pressure value of the diamond high-pressure inclusion by changing the pressure and temperature parameters in the high-temperature and high-pressure process.

[0023] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the high-temperature and high-pressure treatment is performed on a diamond anvil cell or a large cavity press.

[0024] According to the preparation method of the diamond high-pressure inclusion provided by the present application, the high-temperature and high-pressure treatment is performed on a diamond anvil cell or a large cavity press.

[0025] The first layer of thin film carbon material is formed by a thin film preparation process;

[0026] The target material is formed on the first layer of thin film carbon material to obtain a composite layer;

[0027] The second layer of thin film carbon material is formed on the composite layer by a thin film preparation process to obtain a composite thin film;

[0028] One or more composite thin films are stacked and subjected to high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. For example, one composite thin film is subjected to high-temperature and high-pressure treatment, and the process is as shown in Figure 1

[0029] In the second aspect, the present application also provides a diamond high-pressure inclusion prepared by the preparation method of the diamond high-pressure inclusion as described above.

[0030] Preferably, the high-pressure state material includes monodisperse nanoparticles.

[0031] The materials of the adjacent two layers of thin film carbon material are the same or different.

[0032] ​The application provides a diamond high-pressure inclusion and a preparation method thereof. The diamond high-pressure inclusion comprises a diamond high-pressure chamber and a solid high-pressure state material in the diamond high-pressure chamber. The high-pressure state material comprises a material in a state of a pressure greater than 1 atm. The preparation method comprises the following steps: taking a target material and a carbon material in a film form as main raw materials, and performing high-temperature and high-pressure treatment to obtain the diamond high-pressure inclusion. The target material is distributed between adjacent two layers of the carbon material in the film form. The high-temperature and high-pressure treatment makes the carbon material transform into the diamond high-pressure chamber for wrapping the high-pressure state target material. According to the application, the carbon material in the film form is used as the raw material, the internal pressure state of the synthesized diamond inclusion, the particle size, the volume fraction and the spatial distribution state of the wrapped material can be adjusted according to requirements, and the batch preparation of the diamond high-pressure inclusion composite material with high controllability is realized.

[0033] The method of the application can obtain products from nanometers to centimeters in a multi-scale range, and can meet different application purposes. BRIEF DESCRIPTION OF DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can also be obtained by those skilled in the art without any creative effort.

[0035] Figure 1 is a schematic diagram of the main process of preparing the diamond high-pressure inclusion.

[0036] Figure 2 is a cross-sectional transmission electron microscope photo of the carbon-gold-carbon composite film of example 2 of the application.

[0037] Figure 3 is a planar transmission electron microscope photo of the carbon-gold-carbon composite film of example 2 of the application.

[0038] Figure 4 is an electron energy loss spectrum of the carbon layer of example 2 of the application.

[0039] Figure 5 is a high-resolution transmission electron microscope photo of the diamond high-pressure inclusion of example 2 of the application, wherein the diamond wraps gold nanoparticles in a high-pressure state.

[0040] Figure 6 is a high-resolution transmission electron microscope photo of the diamond high-pressure inclusion of example 3 of the application, wherein the diamond wraps gold nanoparticles in a high-pressure state. DETAILED DESCRIPTION

[0041] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below with reference to the drawings in the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of the present application.

[0042] The present application will be described below with reference to the preferred embodiments thereof. Figures 1-6 The present application relates to a diamond high-pressure inclusion and a preparation method thereof.

[0043] Unless specific techniques or conditions are specified in the embodiments, the techniques or conditions described in the literature in the art or the product instructions are used. Unless the manufacturers of the reagents or instruments are specified, the reagents or instruments are all conventional products that can be purchased through regular channels.

[0044] The preferred embodiments of the present application will be described below.

[0045] Embodiment 1

[0046] A preparation method of a diamond high-pressure inclusion, comprising the following steps:

[0047] (1) A carbon target is selected, and a carbon layer with a thickness of 20 nm is sputtered on a polyvinyl alcohol hydrogel layer substrate by a magnetron sputtering method, and the carbon layer is recorded as a first carbon layer, wherein the magnetron sputtering process parameters are as follows: a radio frequency sputtering power of 200 W, a time of 2600 s, an Ar gas pressure of 20 mTorr, and an Ar gas flow rate of 30 sccm.

[0048] (2) A gold target is selected, and gold nanoparticles are sputtered on the carbon layer obtained in step (1) by a magnetron sputtering method, wherein the magnetron sputtering process parameters are as follows: a radio frequency sputtering power of 200 W, a time of 6 s, an Ar gas pressure of 20 mTorr, and an Ar gas flow rate of 30 sccm, so that a composite layer with uniformly distributed gold nanoparticles on the surface is obtained.

[0049] (3) A carbon target is selected, and a carbon layer is sputtered on the composite layer obtained in step (2) by a magnetron sputtering method, wherein the magnetron sputtering process parameters are as follows: a radio frequency sputtering power of 200 W, a time of 2600 s, an Ar gas pressure of 20 mTorr, and an Ar gas flow rate of 30 sccm, and the carbon layer is recorded as a second carbon layer, so that a composite thin film is obtained, and part of the regions of the first carbon layer and the second carbon layer in the composite thin film form sp 2 bonding. 2 The sp bonding makes the gold nanoparticles between the first carbon layer and the second carbon layer maintain a uniformly distributed state, that is, before high-temperature and high-pressure treatment, the first carbon layer and the second carbon layer in the composite thin film completely wrap the gold nanoparticles, and there is no gap between the first carbon layer and the second carbon layer in the composite thin film.

[0050] (4) The composite film obtained in step (3) is dissolved in deionized water to remove the polyvinyl alcohol hydrogel layer, obtaining a film composed of a first carbon layer, gold nanoparticles and a second carbon layer in a sandwich structure, and the total thickness of the film is 60 nm.

[0051] (5) The 10 layers of the film obtained in step (4) are stacked, naturally air-dried, and then cut into square blocks with a side length of 90 μm; then loaded into a diamond anvil press, and a layer of sodium chloride is laid on the upper and lower pressure cavities as a heat insulation layer; after being pressurized to 30 GPa, laser heating is performed to 1700℃ and maintained for 2 minutes; finally, the pressure is released to normal pressure, and the diamond inclusion is taken out.

[0052] The diamond inclusion obtained in step (5) is subjected to transmission electron microscopy analysis, and the results show that the gold nanoparticles are uniformly distributed in the nanocrystalline diamond, and the (111) crystal face spacing of the gold nanoparticles wrapped by the diamond is reduced relative to the initial state, indicating that it is in a high-pressure state.

[0053] Example 2

[0054] A method for preparing a diamond high-pressure inclusion, comprising the following steps:

[0055] (1) A carbon target is selected, and a carbon layer with a thickness of 30 nm is sputtered on a polyvinyl alcohol hydrogel layer substrate by a magnetron sputtering method, and the magnetron sputtering process parameters are as follows: radio frequency sputtering power 200 W, time 3900 s, Ar gas pressure 20 mTorr, and Ar gas flow rate 30 sccm, and the carbon layer is recorded as a first carbon layer.

[0056] (2) A gold target is selected, and gold nanoparticles are sputtered on the carbon layer obtained in step (1) by a magnetron sputtering method, and the magnetron sputtering process parameters are as follows: radio frequency sputtering power 200 W, time 9 s, Ar gas pressure 20 mTorr, and Ar gas flow rate 30 sccm, obtaining a composite layer with uniformly distributed gold nanoparticles on the surface.

[0057] (3) A carbon target is selected, and a carbon layer is sputtered on the composite layer obtained in step (2) by a magnetron sputtering method, and the magnetron sputtering process parameters are as follows: radio frequency sputtering power 200 W, time 3900 s, Ar gas pressure 20 mTorr, and Ar gas flow rate 30 sccm, and the carbon layer is recorded as a second carbon layer, obtaining a composite film, and the cross-sectional transmission electron microscopy photograph and the planar transmission electron microscopy photograph of the film are shown in Figure 2 and 3 The electron energy loss spectrum of the carbon layer in the film is shown in Figure 4 It can be seen that the first carbon layer and the second carbon layer in the composite film form sp 2 bonding in some areas. 2The bonding ensures that the gold nanoparticles between the first carbon layer and the second carbon layer are uniformly distributed. That is, before the high temperature and high pressure treatment, the first carbon layer and the second carbon layer in the composite film completely encapsulate the gold nanoparticles, and there are no gaps between the first carbon layer and the second carbon layer in the composite film.

[0058] (4) The composite film obtained in step (3) is dissolved in deionized water to remove the polyvinyl alcohol hydrogel layer, and a film with a sandwich structure consisting of a first carbon layer, gold nanoparticles and a second carbon layer is obtained. The total thickness of the film is 90 nm.

[0059] (5) Stack the 20 layers of film obtained in step (4), let them air dry naturally, and then cut them into square blocks with a side length of 90 μm. Then, put them into a diamond anvil press, fill the upper and lower chambers with argon gas as a heat insulation layer, pressurize to 30 GPa, heat to 1700℃ and hold for 2 minutes. Finally, release the pressure to normal pressure and take out the diamond inclusion.

[0060] The diamond inclusions obtained in step (5) were analyzed by transmission electron microscopy, such as... Figure 5 As shown, gold nanoparticles are uniformly distributed within nanocrystalline diamond, and... Figure 2 and Figure 3 In comparison, the distribution and size of the gold nanoparticles encapsulated in diamond were preserved, while the average (111) interplanar spacing of the gold nanoparticles was [missing information]. This indicates that it is in a high-pressure state.

[0061] Example 3

[0062] A method for preparing diamond high-pressure inclusions, comprising the following steps:

[0063] (1) Select carbon target material and adopt magnetron sputtering method. The magnetron sputtering process parameters are: RF sputtering power 200W, time 3900s, Ar gas pressure 20mTorr, Ar gas flow rate 30sccm. Sputter a carbon layer with a thickness of 30nm on the polyvinyl alcohol hydrogel layer substrate, which is called the first carbon layer.

[0064] (2) Select a gold target and use magnetron sputtering to sputter gold nanoparticles onto the carbon layer obtained in step (1). The magnetron sputtering process parameters are: RF sputtering power 200W, time 9s, Ar gas pressure 20mTorr, Ar gas flow rate 30sccm, to obtain a composite layer with gold nanoparticles uniformly distributed on the surface.

[0065] (3) Select a carbon target and use magnetron sputtering to sputter a carbon layer onto the composite layer obtained in step (2). The magnetron sputtering process parameters are: RF sputtering power 200W, time 3900s, Ar gas pressure 20mTorr, and Ar gas flow rate 30sccm. This carbon layer is designated as the second carbon layer, and a composite film is obtained. Partial areas of the first and second carbon layers in this composite film form sp... 2 Bonding, the sp 2 The bonding ensures that the gold nanoparticles between the first carbon layer and the second carbon layer are uniformly distributed. That is, before the high temperature and high pressure treatment, the first carbon layer and the second carbon layer in the composite film completely encapsulate the gold nanoparticles, and there are no gaps between the first carbon layer and the second carbon layer in the composite film.

[0066] (4) The composite film obtained in step (3) is dissolved in deionized water to remove the polyvinyl alcohol hydrogel layer, and a film with a sandwich structure consisting of a first carbon layer, gold nanoparticles and a second carbon layer is obtained. The total thickness of the film is 90 nm.

[0067] (5) Stack the 20 layers of film obtained in step (4), let them air dry naturally, and then cut them into square blocks with a side length of 60 μm. Then, put them into a diamond anvil press, fill the upper and lower chambers with argon gas as a heat insulation layer, pressurize to 40 GPa, heat to 1900℃ and hold for 2 minutes. Finally, release the pressure to normal pressure and take out the diamond inclusion.

[0068] The diamond inclusions obtained in step (5) were analyzed by transmission electron microscopy, such as... Figure 6 As shown, gold nanoparticles are uniformly distributed within nanocrystalline diamond, and the average (111) interplanar spacing of the gold nanoparticles encapsulated in diamond is [value missing]. This indicates that it is in a high-pressure state, and its pressure is higher than that of the gold nanoparticles in Example 2. This demonstrates that in a high-temperature, high-pressure process, the structure (phase) and pressure value of the diamond high-pressure inclusions can be controlled by changing the pressure and temperature parameters.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for producing a diamond high-pressure inclusion, the diamond high-pressure inclusion comprising a diamond high-pressure cell and a solid high-pressure state material located within the diamond high-pressure cell; the high-pressure state material being a material in a state under a pressure greater than 1 atmosphere; characterized in that, The preparation method comprises: obtaining a solid target material and a carbon material in a form of two or more layers of films as main raw materials through high-temperature and high-pressure treatment; and wrapping the target material with a certain space distribution and / or a certain size between two adjacent layers of the carbon material in the form of films. The high-temperature and high-pressure treatment converts the carbon material into the diamond high-pressure cell wrapping the high-pressure state material.

2. The method of claim 1, wherein the diamond HPB is prepared by, Before the high-temperature and high-pressure treatment, the carbon material in the form of films completely wraps the target material, and no gap is formed between the two adjacent layers of the carbon material in the form of films.

3. The method of producing a diamond HPB according to claim 1 or 2, characterized in that, The preparation of the raw materials comprises: first arranging the target material on the carbon material in the form of films, and then arranging the carbon material in the form of films; the carbon material in the form of films is formed by a thin film preparation process, and the thin film preparation process comprises one or two or more of physical vapor deposition, chemical vapor deposition, atomic layer deposition and wet chemical method.

4. The method of claim 1 or 2, wherein the diamond HPB is prepared by, The total thickness of the composite film composed of the two adjacent layers of the carbon material in the form of films and the target material therebetween is denoted as D, and the value range of D is 10 nm to 50 microns. The thickness of one layer of the carbon material in the form of films is denoted as d, and d is greater than or equal to 30% of D.

5. The method of claim 3, wherein the diamond HPB is prepared by, The total thickness of the composite film composed of the two adjacent layers of the carbon material in the form of films and the target material therebetween is denoted as D, and the value range of D is 10 nm to 50 microns. The thickness of one layer of the carbon material in the form of films is denoted as d, and d is greater than or equal to 30% of D.

6. The diamond HPB of any one of claims 1, 2, 5, wherein, The form of the target material comprises one or a combination of two or more of particles, rods and flakes.

7. The diamond HPB of claim 6, wherein, The target material comprises nanoparticles in a monodisperse state.

8. The diamond HPB of claim 3, wherein, The form of the target material comprises one or a combination of two or more of particles, rods and flakes.

9. The diamond HPB of claim 8, wherein, The target material comprises nanoparticles in a monodisperse state.

10. The diamond HPB of claim 4, wherein, The form of the target material comprises one or a combination of two or more of particles, rods and flakes.

11. The diamond HPB of claim 10, wherein, The target material comprises nanoparticles in a monodisperse state.

12. The method of producing a diamond HPB according to any one of claims 1, 2, 5, 7-11, characterized in that, The high-temperature and high-pressure treatment comprises: treating the raw materials under the conditions of 15-100 GPa and 1200-2500 DEG C.

13. The method of claim 12, wherein the diamond HPB is prepared by, The raw materials are treated under the conditions of 15-100 GPa and 1200-2500 DEG C for 1-20 minutes.

14. The method of claim 3, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment comprises: treating the raw materials under the conditions of 15-100 GPa and 1200-2500 DEG C.

15. The method of claim 14, wherein the diamond HPB is prepared by, The raw materials are treated under the conditions of 15-100 GPa and 1200-2500 DEG C for 1-20 minutes.

16. The method of claim 4, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment comprises: treating the raw materials under the conditions of 15-100 GPa and 1200-2500 DEG C.

17. The method of claim 16, wherein the diamond HPB is prepared by, The raw materials are treated under the conditions of 15-100 GPa and 1200-2500 DEG C for 1-20 minutes.

18. The method of claim 6, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment comprises: treating the raw materials under the conditions of 15-100 GPa and 1200-2500 DEG C.

19. The method of claim 18, wherein the diamond HPB is prepared by, The raw materials are treated under the conditions of 15-100 GPa and 1200-2500 DEG C for 1-20 minutes.

20. The method of producing a diamond HPB according to any one of claims 1, 2, 5, 7-11, 13-19, characterized in that, The high-temperature and high-pressure treatment is performed by using a diamond anvil cell or a large cavity press.

21. The method of claim 3, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment is performed by using a diamond anvil cell or a large cavity press.

22. The method of claim 4, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment is performed by using a diamond anvil cell or a large cavity press.

23. The method of claim 6, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment is performed by using a diamond anvil cell or a large cavity press.

24. The method of claim 12, wherein the diamond HPB is prepared by, The high-temperature and high-pressure treatment is performed by using a diamond anvil cell or a large cavity press.

25. The method of producing a diamond HPB according to any one of claims 1, 2, 5, 7-11, 13-19, 21-24, characterized in that, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

26. The method of claim 3, wherein the diamond HPB is prepared by, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

27. The method of claim 4, wherein the diamond HPB is prepared by, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

28. The method of claim 6, wherein the diamond HPB is prepared by, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

29. The method of claim 12, wherein the diamond HPB is prepared by, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

30. The method of claim 20, wherein the diamond HPB is prepared by, The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion.

31. A diamond high-pressure inclusion, characterized by, The method comprises the following steps:

32. The diamond HPB of claim 31, wherein, forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to obtain a composite layer; forming a second layer of carbon material in a film form on the composite layer by using a film preparation process to obtain a composite film; stacking one or more composite films, and then performing high-temperature and high-pressure treatment and pressure relief to obtain the diamond high-pressure inclusion. The method comprises the following steps: forming a first layer of carbon material in a film form by using a film preparation process; forming a target material on the first layer of carbon material in a film form to

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