Methods, apparatus, and acoustic hole structures for opening a substrate

Abstract

The present specification provides a substrate opening method, device and sound hole structure, which can be used in the field of semiconductor device processing. After obtaining a target substrate to be opened, a first type of etching operation can be performed on a first metal layer and a second metal layer on a core layer surface of the target substrate respectively to form a first hole and a second hole on the first metal layer and the second metal layer respectively; a modification treatment is then performed on the outside of the first metal layer and the second metal layer respectively to obtain a modified target substrate; a first type of etching operation is then performed on a third metal layer and a fourth metal layer newly generated in the modified target substrate respectively to form a third hole and a fourth hole on the third metal layer and the fourth metal layer respectively; and a second type of etching operation is then performed on a relevant area through the third hole, the fourth hole, and the first hole and / or the second hole to obtain a target hole which is small in size, complex in structure, strong in radio frequency interference resistance, and suitable for manufacturing a microphone device.

Description

Technical Field

[0001] This specification belongs to the field of semiconductor device processing technology, and in particular relates to methods, apparatus and structures for opening holes in substrates and sound holes. Background Technology

[0002] Currently, most methods involve mechanical drilling to create holes in printed circuit boards (PCBs). However, conventional mechanical drilling is inefficient and produces holes with low precision and poor quality. Electronic devices, such as microphones, typically have high requirements for the size, precision, and structure of these holes. Therefore, holes created using mechanical drilling in electronic devices like microphones often result in poor sound quality, negatively impacting the user experience.

[0003] There is currently no effective solution to the above problems. Summary of the Invention

[0004] This specification provides a method, apparatus, and sound hole structure for creating holes in a substrate, which can efficiently and accurately create small, complex micro-holes on a substrate suitable for manufacturing microphone devices.

[0005] This specification provides a method for creating openings in a substrate, including:

[0006] Obtain a target substrate; wherein the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the core layer;

[0007] A first type of etching operation is performed on the first metal layer and the second metal layer respectively to create a matching first hole and a second hole on the first metal layer and the second metal layer respectively;

[0008] Modification processes are performed on the outer sides of the first metal layer and the second metal layer of the target substrate to obtain the modified target substrate; wherein, in the modified target substrate, the first metal layer away from the core layer is provided with a first intermediate layer and a third metal layer in sequence, and the second metal layer away from the core layer is provided with a second intermediate layer and a fourth metal layer in sequence.

[0009] The third metal layer and the fourth metal layer are respectively subjected to a first type of etching operation to create matching third holes and fourth holes on the third metal layer and the fourth metal layer, respectively;

[0010] The first intermediate layer, the second intermediate layer, and the core layer are etched using the third and fourth holes, as well as the first and / or second holes, to obtain target holes based on the hybrid layer.

[0011] In one embodiment, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer are copper layers, the core layer is a ceramic layer, and the first intermediate layer and the second intermediate layer are resin layers.

[0012] In one embodiment, the first type of etching operation includes chemical etching, and the second type of etching operation includes laser etching.

[0013] In one embodiment, a second type of etching operation is performed on the first intermediate layer, the second intermediate layer, and the core layer through the third and fourth holes, and the first and / or second holes, including:

[0014] Based on the materials of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, and the first intermediate layer, the second intermediate layer, and the core layer, the matching target wavelength is determined.

[0015] Using a laser of the target wavelength, the first intermediate layer, the core layer, and the second intermediate layer in the corresponding areas are etched through the third hole, the fourth hole, the first hole, and / or the second hole, respectively.

[0016] In one embodiment, a laser of a target wavelength is used to etch the first intermediate layer, the core layer, and the second intermediate layer in corresponding regions through the third hole, the fourth hole, and the first hole and / or the second hole, respectively, including:

[0017] Using a laser of the target wavelength, the first intermediate layer and the second intermediate layer are etched through the third and fourth holes respectively to obtain the corresponding first intermediate hole and the second intermediate hole;

[0018] The core layer is etched using a laser of the target wavelength through the first intermediate hole and the first aperture; and / or, the core layer is etched using a laser of the target wavelength through the second intermediate hole and the second aperture.

[0019] In one embodiment, modification processes are performed on the outer sides of the first and second metal layers of the target substrate to obtain a modified target substrate, including:

[0020] On the side of the first metal layer of the target substrate away from the core layer, prepreg treatment and the addition of a third metal layer are performed sequentially; at the same time, on the side of the second metal layer of the target substrate away from the core layer, prepreg treatment and the addition of a fourth metal layer are performed sequentially.

[0021] The third and fourth metal layers are laminated to obtain the modified target substrate.

[0022] In one embodiment, the matching first hole and second hole include: a first hole and a second hole whose relative distance between the hole center positions and / or hole diameter meet a preset first requirement;

[0023] The matching third and fourth holes include: third and fourth holes whose relative distance between the hole centers and / or hole diameters meet a preset second requirement.

[0024] In one embodiment, after obtaining the target pore based on the hybrid layer, the method further includes:

[0025] A protective layer is applied to the outer surface of the modified target substrate, which includes the target hole.

[0026] This specification also provides a method for creating openings in a substrate, including:

[0027] Obtain a target substrate; wherein the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the first core layer;

[0028] A first type of etching operation is performed on the first metal layer to create a corresponding first hole in the first metal layer;

[0029] Modification is performed on the outside of the first metal layer of the target substrate to obtain the modified target substrate; wherein, a second core layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer in the modified target substrate.

[0030] A first type of etching operation is performed on the second metal layer and the third metal layer respectively to create matching second holes and third holes on the second metal layer and the third metal layer respectively;

[0031] Through the second hole, the third hole, and the first hole, a second type of etching operation is performed on the first core layer and the second core layer respectively to obtain the target hole based on the first metal layer.

[0032] In one embodiment, the first metal layer, the second metal layer, and the third metal layer are copper layers, and the first core layer and the second core layer are resin layers.

[0033] In one embodiment, the first type of etching operation includes chemical etching, and the second type of etching operation includes laser etching.

[0034] In one embodiment, a second type of etching operation is performed on the first core layer and the second core layer through the second hole, the third hole, and the first hole, respectively, to obtain a target hole based on the first metal layer, including:

[0035] Based on the materials of the first metal layer, the second metal layer, the third metal layer, and the first core layer and the second core layer, the matching target wavelength is determined;

[0036] Using a laser of the target wavelength, the first core layer, the second core layer, and the first metal layer in the corresponding areas are etched through the second hole, the third hole, and the first hole to obtain the target hole based on the first metal layer.

[0037] In one embodiment, the modification process is performed on the outer side of the first metal layer of the target substrate, including:

[0038] On the side of the first metal layer of the target substrate away from the core layer, prepreg treatment, addition of a third metal layer, and lamination treatment are performed sequentially.

[0039] In one embodiment, after obtaining the target hole based on the first metal layer, the method further includes:

[0040] The target hole is grounded.

[0041] This specification also provides a sound hole structure, comprising at least a mixing layer, wherein a first structural member is disposed on a first surface of the mixing layer, and a second structural member is disposed on a second surface of the mixing layer; wherein...

[0042] The hybrid layer includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on both sides of the core layer; the hybrid layer also has a target hole, which is sequentially connected to the first metal layer, the core layer and the second metal layer;

[0043] The first structural component is connected to the first metal layer, and the second structural component is connected to the second metal layer.

[0044] In one embodiment, the first structural member includes at least an intermediate structural layer and a metal structural layer; wherein the intermediate structural layer is connected to the first metal layer.

[0045] In one embodiment, the first metal layer, the second metal layer, and the metal structure layer are made of copper, the core layer is made of ceramic, and the intermediate structure layer is made of resin.

[0046] In one embodiment, a protective layer is further provided on the outer surface of the first metal layer, the second metal layer, and the metal structure layer.

[0047] This specification also provides a substrate opening device, including:

[0048] An acquisition module is used to acquire a target substrate; wherein the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the core layer;

[0049] The first etching module is used to perform a first type of etching operation on the first metal layer and the second metal layer respectively, so as to open a matching first hole and a second hole on the first metal layer and the second metal layer respectively.

[0050] The modification module is used to perform modification processing on the outer sides of the first metal layer and the second metal layer of the target substrate to obtain the modified target substrate; wherein, in the modified target substrate, the first metal layer away from the core layer is provided with a first intermediate layer and a third metal layer in sequence, and the second metal layer away from the core layer is provided with a second intermediate layer and a fourth metal layer in sequence.

[0051] The second etching module is used to perform first-type etching operations on the third metal layer and the fourth metal layer respectively, so as to open matching third holes and fourth holes on the third metal layer and the fourth metal layer respectively.

[0052] The third etching module is used to perform a second type of etching operation on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain target holes based on the hybrid layer.

[0053] This specification also provides a substrate opening device, including:

[0054] An acquisition module acquires a target substrate; wherein the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the first core layer;

[0055] The first etching module is used to perform a first type of etching operation on the first metal layer to open a corresponding first hole on the first metal layer;

[0056] The modification module is used to modify the outer side of the first metal layer of the target substrate to obtain the modified target substrate; wherein, the first metal layer of the modified target substrate is provided with a second core layer and a third metal layer on the side away from the core layer.

[0057] The second etching module is used to perform first-type etching operations on the second metal layer and the third metal layer respectively, so as to open matching second holes and third holes on the second metal layer and the third metal layer respectively.

[0058] The third etching module is used to perform a second type of etching operation on the first core layer and the second core layer through the second hole, the third hole, and the first hole, respectively, to obtain a target hole based on the first metal layer.

[0059] This specification also provides an electronic device, including a processor and a memory for storing processor-executable instructions, wherein the processor, when executing the instructions, implements the relevant steps of the method for opening a hole in the substrate.

[0060] This specification also provides a computer-readable storage medium storing computer instructions that, when executed by a processor, implement the relevant steps of the method for opening holes in the substrate.

[0061] This specification also provides a computer program product comprising a computer program that, when executed by a processor, implements the relevant steps of the method for opening holes in the substrate.

[0062] Based on the substrate opening method, apparatus, and sound hole structure provided in this specification, a first type of etching operation can be performed on the first and second metal layers on the surface of the core layer of the target substrate to create matching first and second holes on the first and second metal layers, respectively. Then, modification processing is performed on the outer sides of the first and second metal layers to obtain a modified target substrate. A first type of etching operation is then performed on the newly generated third and fourth metal layers in the modified target substrate to create matching third and fourth holes on the third and fourth metal layers, respectively. Finally, a second type of etching operation is performed on the core layer and the newly generated first and second intermediate layers using the third and fourth holes, as well as the first and / or second holes, to obtain target holes based on a hybrid layer. This allows for the efficient and precise creation of micro-holes on the substrate that are small in size, complex in structure, have strong resistance to radio frequency interference, and are suitable for manufacturing microphone devices, achieving good application results. Attached Figure Description

[0063] To more clearly illustrate the embodiments of this specification, the accompanying drawings used in the embodiments will be briefly introduced below. The drawings described below are only some embodiments recorded in this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0064] Figure 1 This is a schematic flowchart of a substrate opening method provided in one embodiment of this specification;

[0065] Figure 2 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0066] Figure 3 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0067] Figure 4 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0068] Figure 5 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0069] Figure 6This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0070] Figure 7 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0071] Figure 8 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0072] Figure 9 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0073] Figure 10 This is a schematic flowchart of a substrate opening method provided in another embodiment of this specification;

[0074] Figure 11 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0075] Figure 12 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0076] Figure 13 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0077] Figure 14 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0078] Figure 15 This is a schematic diagram of the structural composition of an electronic device provided in one embodiment of this specification;

[0079] Figure 16 This is a schematic diagram of the structure of the opening device for a substrate provided in one embodiment of this specification;

[0080] Figure 17 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0081] Figure 18 This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example.

[0082] Figure 19This is a schematic diagram of one embodiment of the substrate opening method provided in the embodiments of this specification, applied in a scenario example. Detailed Implementation

[0083] To enable those skilled in the art to better understand the technical solutions in this specification, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this specification.

[0084] It should be noted that the information and data related to users involved in the embodiments of this specification are all information and data authorized by the user or fully authorized by the relevant parties. Furthermore, the collection, storage, use, processing, transmission, provision, disclosure, and application of the relevant data all comply with relevant laws, regulations, and standards, and necessary confidentiality measures have been taken. They do not violate public order and good morals, and corresponding operation entry points are provided for users or relevant parties to choose to authorize or refuse.

[0085] It should also be noted that in the embodiments of this specification, certain software, components, models and other existing solutions in the industry may be mentioned. These should be regarded as exemplary and are only intended to illustrate the feasibility of implementing the technical solution of this application. However, it does not mean that the applicant has used or necessarily used the solution.

[0086] Currently, most methods involve mechanical drilling on substrates (e.g., PCBs). This method has several drawbacks. First, it typically only drills one hole at a time, requiring multiple drilling operations to create multiple holes. This increases overall processing costs and reduces efficiency. Furthermore, each drilling operation can potentially affect adjacent holes, altering their size or shape. Second, the drilling accuracy is relatively low, easily resulting in burrs and other errors around the hole, impacting subsequent use, especially with small, complex micro-holes. Additionally, holes obtained this way, when used in microphones (e.g., MEMS microphones), suffer from weak interference resistance and poor filtering due to variations in hole structure, accuracy, and size, affecting the microphone's sound quality. Furthermore, laser drilling alone typically yields less than ideal drilling accuracy, and burrs are also prone to appearing around the hole.

[0087] To address the aforementioned problems with existing methods, and considering the root causes of these problems, firstly, it is important to consider that the substrate typically contains a core layer (e.g., Core) and metal layers (e.g., Copper) on its upper and lower surfaces, respectively, and that the material properties of the core layer and the metal layers are completely different. Secondly, it is also considered that different frequency bands and wavelengths of lasers have varying etching capabilities for different materials, as do different chemical etching solvents. Furthermore, it is also considered that in microphone manufacturing, holes of different materials and structures exhibit significant differences in electrical performance, which in turn affects the microphone's anti-interference capabilities, filtering effects, and ultimately, the overall sound quality of the microphone device.

[0088] Based on the above, the applicant further considered that a chemical etching method effective only for the metal layer material and ineffective for the core layer material could be used to perform a first-type etching operation on the original metal layers on both sides of the substrate, thereby creating multiple small and highly precise matching vias on the metal layers on both sides of the substrate. Then, the outer sides of the metal layers on both sides would be modified to sequentially generate intermediate layers, new metal layers, and other structures on the outer sides of the metal layers on both sides, resulting in a modified substrate. Next, a first-type etching operation would be performed on the outer sides of the newly generated metal layers on both sides of the modified substrate, again creating small and highly precise matching vias on the newly generated metal layers on both sides. Finally, a chemical etching method effective only for the core layer and intermediate layer material and ineffective for the metal layer material could be used. The ineffective laser is used to perform a second type of etching operation on the core and intermediate layers through multiple small holes in the metal layers. This allows for two advantages: First, the laser can simultaneously create multiple small holes in the core and intermediate layers in a single etching operation, effectively avoiding the impact of multiple hole-making operations on adjacent holes. Second, the laser's action on the core and intermediate layers can be constrained by the previously etched, high-precision metal layers. In other words, the size, position, and precision of the laser-engraved holes can be precisely controlled using these pre-etched, high-precision metal layers. This allows for effective control and precise etching of the required hybrid-layer structure-based small holes. Therefore, this method is well-suited for microphone manufacturing, enabling the efficient and precise creation of small, complex micro-holes suitable for subsequent microphone device fabrication on the substrate.

[0089] See Figure 1 As shown in the embodiments of this specification, a method for creating holes in a substrate is provided. In specific implementation, this method may include the following:

[0090] S101: Obtain a target substrate; wherein the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on the first surface and the second surface of the core layer;

[0091] S102: Perform a first type of etching operation on the first metal layer and the second metal layer respectively to open a matching first hole and a second hole on the first metal layer and the second metal layer respectively;

[0092] S103: Modification processes are performed on the outer sides of the first metal layer and the second metal layer of the target substrate to obtain the modified target substrate; wherein, in the modified target substrate, the first metal layer away from the core layer is provided with a first intermediate layer and a third metal layer in sequence, and the second metal layer away from the core layer is provided with a second intermediate layer and a fourth metal layer in sequence.

[0093] S104: Perform a first type of etching operation on the third metal layer and the fourth metal layer respectively to create matching third holes and fourth holes on the third metal layer and the fourth metal layer respectively;

[0094] S105: Perform a second type of etching operation on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain the target hole based on the hybrid layer.

[0095] Specifically, the target substrate can be understood as a circuit board material to be drilled, such as a PCB.

[0096] The aforementioned PCB (Printed Circuit Board) can be understood as a support structure for electronic components, serving as the carrier for the electrical interconnection of these components. Specifically, a PCB may include a core layer (also called a core board), which provides structural support for the PCB. Copper layers (also called copper plates) are also provided on the upper and lower surfaces of the core layer to provide conductive paths for the circuitry.

[0097] For details, please refer to Figure 2 As shown, the target substrate includes at least a core layer. Specifically, the core layer may include a first surface (e.g., an upper surface) and a second surface (e.g., a lower surface). A first metal layer may be disposed on the first surface, and a second metal layer may be disposed on the second surface.

[0098] The modified target substrate can be understood as the substrate obtained by modification after the first type of etching operation.

[0099] See Figure 2As shown, in the modified target substrate, a first intermediate layer and a third metal layer are sequentially disposed on the outer side of the original first metal layer away from the core layer; similarly, a second intermediate layer and a fourth metal layer are sequentially disposed on the outer side of the original second metal layer away from the core layer.

[0100] The first, second, third, and fourth metal layers can be structural layers made of metallic materials (e.g., copper, titanium, etc.). The core layer, first intermediate layer, and second intermediate layer can be structural layers made of non-metallic materials (e.g., ceramics, resin, glass fiber, etc.).

[0101] The first, second, third, and fourth metal layers can be made of the same metal material or different metal materials. Similarly, the core layer, first intermediate layer, and second intermediate layer can be made of the same non-metallic material or different non-metallic materials.

[0102] Specifically, for example, in microphone manufacturing scenarios, the first, second, third, and fourth metal layers can be copper layers; the first and second intermediate layers can be resin layers; and the core layer can be a ceramic layer. The resin can be epoxy resin, FR4 material, or BT material, etc. Furthermore, the core layer can specifically be a ceramic layer with a thickness of 3 to 8 micrometers.

[0103] It should be noted that the core layer, first intermediate layer, second intermediate layer, first metal layer, second metal layer, third metal layer, and fourth metal layer listed above are merely illustrative. In actual implementation, the specific application scenario and processing requirements will determine the appropriate material. The target substrate may include other types of circuit board materials. This specification does not limit this.

[0104] The first type of etching operation described above can be understood as an etching operation that is only effective on the materials of the first, second, third, and fourth metal layers, while being ineffective on the materials of the core layer, first intermediate layer, and second intermediate layer. Specifically, this first type of etching operation can be chemical etching, which is effective on the first, second, third, and fourth metal layers but ineffective on the core layer, first intermediate layer, and second intermediate layer. Chemical etching can handle relatively complex patterns, is suitable for mass production, and has a lower cost.

[0105] The second type of etching operation described above can be understood as an etching operation that is only effective on the core layer, the first intermediate layer, and the second intermediate layer, while being ineffective on the materials of the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer. Specifically, this second type of etching operation can be laser etching that is effective on the core layer, the first intermediate layer, and the second intermediate layer, but ineffective on the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer. Laser etching is a non-contact process, which can effectively avoid damage to the material caused by drilling vibration; at the same time, the hole-opening process does not generate chips and can achieve a high aspect ratio, making it suitable for relatively fine hole machining.

[0106] The aforementioned modification process can be understood as a modification operation of the substrate structure layers based on prepreg and lamination processes. The prepreg can specifically be a pre-impregnated resin material, typically in a semi-cured state before lamination. It serves as an adhesive and insulating material for the inner layers of the multilayer printed circuit board, ensuring strong adhesion of the conductive pattern layers. After lamination, the semi-cured epoxy resin flows and cures, bonding the multilayer board into a single unit and forming an insulating layer, thereby enhancing the overall stability and electrical performance of the substrate.

[0107] The first and second holes mentioned above can be understood as metal holes respectively formed on the first and second metal layers. The third and fourth holes mentioned above can be understood as metal holes respectively formed on the third and fourth metal layers. For details, please refer to [link / reference needed]. Figure 3 As shown, each set of matching third and fourth holes can correspond to one or more sets of matching first and second holes.

[0108] The matching first and second holes may include first and second holes whose relative distance between their center positions and / or their diameters meet a preset first requirement. For example, a first and second hole whose relative distance between their center positions is less than or equal to half the sum of their diameters.

[0109] The matching third and fourth holes may include third and fourth holes whose relative distance between their center positions and / or hole diameters meet a preset second requirement. For example, third and fourth holes whose relative distance between their center positions is less than or equal to half the sum of the hole diameters of the two holes.

[0110] For specific implementation, please refer to Figure 3As shown, according to the preset processing rules, firstly, a first type of etching operation (which can be referred to as the first first type of etching operation) is performed on the first metal layer and the second metal layer respectively to open one or more sets of matching first holes and second holes on the first metal layer and the second metal layer respectively; then, modification processing is performed on the outside of the first metal layer and the second metal layer of the target substrate respectively, through operations such as prepreg, setting metal layers, and lamination, to generate a first intermediate layer and a third metal layer on the outside of the first metal layer, and at the same time, to generate a second intermediate layer and a fourth metal layer on the outside of the second metal layer; then, a first type of etching operation (which can be referred to as the second first type of etching operation) is performed on the third metal layer and the fourth metal layer respectively to open one or more sets of matching third holes and fourth holes on the third metal layer and the fourth metal layer; then, through the third holes, the fourth holes, and the first holes and / or the second holes, targeted second type of etching operations are performed on the corresponding areas of the first intermediate layer, the core layer, and the second intermediate layer in the modified target substrate, and a corresponding fifth hole is etched in the core layer. In this way, a high-energy-density laser can be used to irradiate the corresponding area after passing through the third and fourth holes, as well as the first and / or second holes, causing the material in the irradiated area to melt or vaporize instantaneously, resulting in a fifth hole with high precision and good quality. The position, size, and precision of the fifth hole are related to the first and / or second holes. Furthermore, the fifth hole can be used to connect the corresponding first and second holes to obtain the target hole based on the hybrid layer.

[0111] Among them, see Figure 3 As shown, the target hole can specifically be a hole that penetrates the hybrid layer. The hybrid layer, from top to bottom, consists of a first metal layer, a core layer, and a second metal layer tightly bonded together. Since the top and bottom ends of the target hole are metal conductors, and a ceramic insulating medium is placed between the two metal conductors, a capacitor structure can be formed under certain conditions. Therefore, when subsequently applied to microphone devices as a sound port, the capacitor structure of the target hole can be utilized to improve the microphone's filtering effect, providing users with a relatively better user experience.

[0112] When using the target hole to create a microphone device, please refer to [reference needed]. Figure 17 As shown, the target hole is connected to the microphone device as the sound hole, and the first metal layer is connected to the power supply, while the second metal layer is grounded. (See reference...) Figure 18 As shown, this can further form a capacitor (MEMS capacitor) structure. Its capacitance value can be calculated using the following formula:

[0113]

[0114] Where C is the capacitance value, A is the area of ​​the first metal layer (area of ​​plates), K is a constant, and D... K t is the dielectric constant of the ceramic layer between the first and second metal layers, and t is the thickness of the ceramic layer, which is typically greater than or equal to 3 micrometers and less than or equal to 8 micrometers.

[0115] By introducing the aforementioned target holes, the area of ​​the first metal layer of the capacitor can be increased, thereby improving the overall capacitance value.

[0116] Furthermore, the capacitor (MEMS condenser) formed based on the aforementioned sound hole can be connected to an application-specific integrated circuit (ASIC) to construct the filtering circuit of the microphone device. See also... Figure 19 As shown in the diagram. In practical implementation, the two ends of the application-specific integrated circuit (ASIC) can be connected to power and ground, respectively. Here, "Silicon back plate" represents the substrate, "Silicon diaphragm" represents the silicon diaphragm, and "RC filter" represents the RC filter. Furthermore, through the aforementioned filtering circuit and the aforementioned capacitor, the microphone device can achieve a better filtering effect, improving the output signal.

[0117] Furthermore, since the top and bottom ends of the target aperture are metal conductors, they can be grounded depending on the specific application requirements. This eliminates static electricity in the microphone's sound port and improves the microphone's immunity to interference signals such as radio frequency signals, further enhancing the user experience when using the microphone.

[0118] The aforementioned preset processing rules can be understood as a set of rules pre-generated based on the processing requirements of the target application scenario. These preset processing rules may include at least one of the following: rules regarding the center position of the first, second, third, and fourth holes; rules regarding the diameter of the first, second, third, and fourth holes; rules regarding the number of openings for the first, second, third, and fourth holes; correspondence rules between matching first and second holes and matching third and fourth holes; operation execution rules for the first type of etching operation; operation execution rules for the second type of etching operation; operation execution rules for modification processing, etc.

[0119] The aforementioned application scenario can specifically be microphone manufacturing (e.g., MEMS microphone manufacturing). Using the above-described perforation method, a large number of small, complex, high-quality micro-holes can be precisely and efficiently created on the target substrate, resulting in a corresponding sound hole structure. When a microphone is subsequently fabricated using this sound hole structure, firstly, the numerous dense micro-holes ensure more balanced internal stress, effectively protecting the microphone diaphragm from damage; secondly, the small size of the micro-holes provides a degree of windproof, waterproof, and dustproof protection; and thirdly, the capacitive characteristics resulting from the complex structure of the sound holes improve the microphone's filtering effect, leading to relatively better sound quality.

[0120] Of course, it should be noted that the microphone production scenarios listed above are only illustrative. In practice, depending on the specific circumstances, the substrate opening method provided in this specification can also be applied to other suitable scenarios. This specification does not limit this application.

[0121] It should also be added that, based on the above method, by using a design that includes a first metal layer, a core layer and a second metal layer to open the target hole, the area of ​​the metal layer (e.g., copper layer) of the sound hole can be increased, thereby helping to improve the strength of the substrate (printed circuit board) during the manufacturing process, and can also effectively reduce the warpage of the substrate to improve the yield.

[0122] Based on the above embodiments, a first type of etching operation is first performed on the first metal layer and the second metal layer on the surface of the core layer of the target substrate to create matching first holes and second holes on the first metal layer and the second metal layer, respectively. Then, modification processing is performed on the outer sides of the first metal layer and the second metal layer to obtain a modified target substrate. A first type of etching operation is then performed on the newly generated third metal layer and the fourth metal layer in the modified target substrate to create matching third holes and fourth holes on the third metal layer and the fourth metal layer, respectively. Then, a second type of etching operation is performed on the core layer and the newly generated first intermediate layer and the second intermediate layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain target holes based on a hybrid layer. This allows for the efficient and precise creation of small-sized, complex-structured micro-holes suitable for manufacturing microphone devices on the substrate.

[0123] In some embodiments, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer are copper layers, the core layer is a ceramic layer, and the first intermediate layer and the second intermediate layer are resin layers.

[0124] Depending on the specific application scenario and processing requirements, the first, second, third, and fourth metal layers can also be metal layers made of materials other than copper, such as titanium. Furthermore, the first, second, third, and fourth metal layers can also be different metal layers. For example, the first and second metal layers could be copper, and the third and fourth metal layers could be titanium.

[0125] The core layer can be a ceramic layer or other suitable insulating material layer.

[0126] The aforementioned first and second intermediate layers can be resin layers based on FR4 material or resin layers based on BT material. FR4 (glass fiber epoxy resin) material possesses relatively good insulation, mechanical strength, and heat resistance. BT (bismaleimide triazine) material possesses relatively good high thermal stability, low dielectric constant, and low loss.

[0127] In some embodiments, the first type of etching operation may specifically include chemical etching, and the second type of etching operation may specifically include laser etching.

[0128] Accordingly, the above-mentioned first type of etching operation on the first metal layer and the second metal layer may include: firstly, determining the hole center position parameters and hole diameter parameters of the first hole and the second hole according to the preset processing rules; and then, based on the hole center position parameters and hole diameter parameters, fabricating and setting masks for the first metal layer and the second metal layer respectively; and then, according to the corresponding operation execution rules, performing specific operations such as exposure, development, and etching on the first metal layer and the second metal layer to open one or more sets of matching first holes and second holes in the first metal layer and the second metal layer.

[0129] Specifically, when the first and second metal layers are copper layers, a suitable chemical solution (e.g., FeCl3 solution) can be prepared and used for the etching operation. This chemical solution is effective on the first and second metal layers, but not on the core layer.

[0130] Furthermore, during the etching process, the system can intelligently adjust the ambient temperature based on preset processing rules and temperature parameters, ensuring the temperature remains stable within a preset range (e.g., greater than 20 degrees Celsius and less than 50 degrees Celsius). Simultaneously, the etching status is monitored, and the etching time is intelligently adjusted accordingly. This ensures the successful etching of the desired first and second holes while preventing side etching or hole deformation, resulting in high-precision first and second holes. Examples include holes with diameters of 0.05mm, 0.075mm, or 0.1mm.

[0131] In practice, a corresponding etching reference model can be determined based on preset processing rules. Accordingly, the ambient temperature and etching duration can be intelligently adjusted based on the etching reference model.

[0132] Specifically, the aforementioned etching reference model can be obtained as follows: A large number of historical substrate etching records are collected; from these historical substrate etching records, those with etching effects that meet the requirements and whose etched shapes match the required first and second holes at a predetermined matching threshold are selected as reference etching records; the reference etching records are then clustered to obtain the corresponding clustering results; based on the clustering results, common effective parameter ranges for key operational parameters such as ambient temperature and etching time are determined; and based on these effective parameter ranges, the corresponding etching reference model is constructed.

[0133] The first type of etching operation is performed on the third and fourth metal layers as described above. In specific implementation, the embodiments described above for performing the first type of etching operation on the first and second metal layers can be referred to. This specification will not elaborate further.

[0134] The aforementioned second-type etching operation on the first intermediate layer, second intermediate layer, and core layer through the third and fourth holes, as well as the first and / or second holes, can be implemented in the following ways: A matching laser is determined according to a preset processing rule; wherein the laser is effective on the core layer, first intermediate layer, and second intermediate layer, but ineffective on the first metal layer, second metal layer, third metal layer, and fourth metal layer; the laser line passes through the third and fourth holes respectively, irradiating the first and second intermediate layers, causing the material in local areas of the irradiated first and second intermediate layers to melt and evaporate, forming a first intermediate hole and a second intermediate hole penetrating the first and second intermediate layers; further, the laser passing through the aforementioned intermediate holes passes through the first and / or second holes, irradiating the core layer, causing the material in local areas of the irradiated core layer to melt and evaporate, forming a hole penetrating the core layer; thus, a target hole connecting the first metal layer, core layer, and second metal layer can be obtained.

[0135] For details, please refer to Figure 4 As shown, a laser beam can be emitted downwards from above the modified target substrate using a laser (or a laser cutter). Only the laser beam passing through the third hole, constrained by the third hole, can be successfully focused and irradiate the first intermediate layer. The laser's thermal energy can then be used to melt and etch the corresponding first intermediate hole in the irradiated area of ​​the first intermediate layer. Laser beams from other locations, blocked by the third metal layer, cannot etch the metal material and therefore cannot irradiate the first intermediate layer, thus failing to etch an intermediate hole.

[0136] At the same time, a laser beam can be emitted from the bottom of the fourth metal layer to the upper part, and the corresponding second intermediate hole can be etched on the second intermediate layer by means of the constraint of the fourth hole.

[0137] Furthermore, lasers located on both sides of the substrate can continue to emit laser light. The laser passing through the first intermediate hole first irradiates the original first metal layer and etches away the material of the first intermediate layer filling the original first hole, restoring the first hole. Then, only the laser passing through and constrained by the first hole can be successfully focused and irradiate the core layer. Simultaneously, the laser passing through the second intermediate hole first irradiates the original second metal layer and etches away the material of the second intermediate layer filling the original second hole, restoring the second hole. Then, only the laser passing through and constrained by the second hole can be successfully focused and irradiate the core layer. Using these lasers, a hole penetrating the core layer can be etched, which can be designated as the fifth hole. Thus, a target hole obtained by combining the interconnected first hole, fifth hole, and second hole can be obtained. For details, please refer to [reference needed]. Figure 4 As shown.

[0138] In practice, after obtaining the first intermediate hole and the second intermediate hole, a laser beam can be emitted using only the laser located on one side of the substrate. For example, a laser beam can be emitted downwards using only the laser located above the substrate. Only the laser beam that passes through the first intermediate hole and is constrained by the first hole can be focused and irradiate the core layer, and a fifth hole penetrating the core layer can be etched on the core layer to obtain the desired target hole.

[0139] Based on the above embodiments, according to the material properties of the target substrate and different layers in the modified target substrate, by introducing and combining two different types of etching operations, the advantages of different types of etching operations can be fully utilized to accurately etch the required holes on the substrate.

[0140] In some embodiments, the second type of etching operation performed on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole may specifically include the following:

[0141] S1: Determine the matching target wavelength based on the materials of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the first intermediate layer, the second intermediate layer, and the core layer;

[0142] S2: Using a laser of the target wavelength, the first intermediate layer, the core layer, and the second intermediate layer in the corresponding areas are etched through the third hole, the fourth hole, the first hole, and / or the second hole, respectively.

[0143] This leads to the first intermediate hole in the first intermediate layer, the second intermediate hole in the second intermediate layer, and the fifth hole in the core layer connected to the first hole in the first metal layer and the second hole in the second metal layer.

[0144] In practice, based on preset processing rules, a laser wavelength that is effective for the core layer, the first intermediate layer, and the second intermediate layer, but ineffective for the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer, as well as the core layer, the first intermediate layer, and the second intermediate layer, can be determined as the matching target wavelength.

[0145] Specifically, when the first, second, third, and fourth metal layers are copper layers, the first and second intermediate layers are resin layers, and the core layer is a ceramic layer, the aforementioned matching target wavelength can be, for example, 10.6 micrometers. A laser with this wavelength can effectively etch away the materials of the first, second, and core layers, but will not etch away the materials of the first, second, and third metal layers.

[0146] In some embodiments, the above-mentioned use of a laser of the target wavelength to etch the first intermediate layer, the core layer, and the second intermediate layer in the corresponding regions through the third hole, the fourth hole, and the first hole and / or the second hole, respectively, may include the following in specific implementations:

[0147] S1: Using a laser of the target wavelength, the first intermediate layer and the second intermediate layer are etched through the third hole and the fourth hole respectively to obtain the corresponding first intermediate hole and the second intermediate hole;

[0148] S2: Using a laser of the target wavelength, the core layer is etched through the first intermediate hole and the first hole; and / or, using a laser of the target wavelength, the core layer is etched through the second intermediate hole and the second hole.

[0149] In some embodiments, a laser of the target wavelength is used to etch the first intermediate layer, the core layer, and the second intermediate layer in the corresponding regions through the third hole, the fourth hole, and the first hole and / or the second hole, respectively. In specific implementations, this may include:

[0150] A carbon dioxide laser is controlled to emit laser light of the target wavelength, which passes through the third and fourth holes, and then through the first and / or second holes, to perform the second type of etching operation on the corresponding areas of the first intermediate layer, the second intermediate layer, and the core layer, respectively.

[0151] Specifically, the aforementioned carbon dioxide laser can be understood as a gas molecular laser, primarily using CO2 gas as its working substance, with auxiliary gases including nitrogen, helium, xenon, and hydrogen. Carbon dioxide lasers can generate and utilize invisible infrared light with a wavelength of 10.6 micrometers for etching.

[0152] Based on the above embodiments, the etching of the core layer, the first intermediate layer, and the second intermediate layer can be safely and stably completed by introducing and using a carbon dioxide laser to generate and utilize a laser with a matching target wavelength.

[0153] In some embodiments, during specific implementation, the laser parameters can be adjusted according to preset processing rules, the carbon dioxide laser can be controlled, and the laser of the target wavelength can be emitted according to the specified illumination duration and / or specified laser intensity. The first intermediate layer, the second intermediate layer, and the core layer can be subjected to corresponding second-type etching operations through the third hole, the fourth hole, and the first hole and / or the second hole.

[0154] Specifically, for different application scenarios, based on preset processing rules, the etching degree of the laser in the first intermediate layer, the second intermediate layer, and the core layer can be flexibly adjusted by adjusting the laser illumination duration and / or laser intensity to meet diverse application needs.

[0155] In some embodiments, modification processes are performed on the outer sides of the first and second metal layers of the target substrate to obtain a modified target substrate. Specifically, this may include the following:

[0156] S1: On the side of the first metal layer of the target substrate away from the core layer, prepreg treatment and third metal layer addition treatment are performed sequentially; at the same time, on the side of the second metal layer of the target substrate away from the core layer, prepreg treatment and fourth metal layer addition treatment are performed sequentially.

[0157] S2: The third and fourth metal layers are laminated to obtain the modified target substrate.

[0158] Based on the above embodiments, after prepreg and metal layer addition processes are completed on the outer sides of the first metal layer and the second metal layer respectively, lamination is performed inward through the two newly added metal layers to uniformly and tightly bond the newly added semi-cured prepreg layer and cured metal layer to the target substrate to obtain a modified target substrate that meets the requirements.

[0159] In some embodiments, the matching first hole and second hole may include: a first hole and a second hole whose relative distance between the hole center positions and / or hole diameter meet a preset first requirement;

[0160] The matching third and fourth holes include: third and fourth holes whose relative distance between the hole centers and / or hole diameters meet a preset second requirement.

[0161] The preset second requirement and the preset second requirement can be the same requirement or different requirements.

[0162] For example, the first preset requirement is that the relative distance between the center positions of the holes is equal to half the sum of the diameters of the two holes, and the second preset requirement is that the relative distance between the center positions of the holes is less than half the sum of the diameters of the two holes.

[0163] Furthermore, the diameters of the first and second holes can be the same or different. Similarly, the diameters of the third and fourth holes can be the same or different.

[0164] Among them, the diameter of the third hole and the diameter of the fourth hole are larger than the diameter of the corresponding first hole and the diameter of the second hole.

[0165] Furthermore, the relative distance between the center positions of the matching first and second holes can be less than or equal to a preset first lower distance limit; or it can be greater than the preset first lower distance limit, but less than or equal to half the sum of the diameters of the two holes. Similarly, the relative distance between the center positions of the matching third and fourth holes can be less than or equal to a preset second lower distance limit; or it can be greater than the preset second lower distance limit, but less than or equal to half the sum of the diameters of the two holes.

[0166] The aforementioned preset first distance lower limit and preset second distance lower limit can be a very small value close to 0, such as 0.001mm.

[0167] Specifically, when the relative distance between the center positions of the matching first and second holes is less than or equal to a preset first lower limit, and simultaneously, the relative distance between the center positions of the matching third and fourth holes is less than or equal to a preset second lower limit, the resulting target hole can be referred to [reference needed]. Figure 3 As shown.

[0168] For example, when the relative distance between the center positions of the matching first and second holes is less than or equal to a preset first distance lower limit, and the relative distance between the center positions of the matching third and fourth holes is greater than a preset second distance lower limit, the resulting target hole can be referenced. Figure 5 As shown.

[0169] In specific implementation, for different application scenarios, based on preset processing rules, under the premise that the relative distance between the hole centers and / or the hole diameter meets the preset requirements, the hole centers and diameters of the first and second holes, as well as the hole centers and diameters of the third and fourth holes, can be set relatively flexibly to a certain extent to obtain target holes with relatively complex structures and meet the diverse application needs in the future.

[0170] In some embodiments, after the first hole and the second hole are recovered, when the relative distance between the center positions of the matching first hole and the second hole is less than or equal to a preset first distance lower limit, and the diameter of the first hole is the same as the diameter of the second hole, refer to Figure 6 As shown, in specific implementation, a laser can be used to perform a second type of etching operation on the core layer by passing through the first hole alone; a laser can also be used to perform a second type of etching operation on the core layer by passing through the second hole alone; or a laser can be used to perform a second type of etching operation on the core layer by passing through the first hole and the second hole simultaneously, thus etching a fifth hole of the same shape on the core layer.

[0171] When the relative distance between the center positions of the matching first and second holes is less than or equal to a preset first distance lower limit, and the diameters of the first and second holes are different, refer to... Figure 7As shown, depending on the application scenario and according to the preset processing rules, the laser can be used to etch the core layer by passing through the first hole alone, the second hole alone, or both holes simultaneously, to obtain target holes of different shapes.

[0172] When using a laser to simultaneously pass through the first and second holes to perform specific etching on the core layer, the illumination duration and / or intensity of the laser passing through the first hole and the laser passing through the second hole can be adjusted in a targeted manner according to the specific application requirements and preset processing rules. This ensures that the core layer can be conductive while precisely controlling the drilling depth of the laser passing through the first hole and the laser passing through the second hole on the core layer, so as to obtain relatively more complex target holes.

[0173] Specifically, based on application requirements, the drilling depth of the laser through the first hole in the core layer (denoted as the first depth) and the drilling depth of the laser through the second hole in the core layer (denoted as the second depth) can be determined. Then, constraints are constructed based on the fact that the sum of the first and second depths equals the thickness of the core layer. Using the laser parameters transmitted through the first hole (denoted as the first laser parameters, including illumination duration and laser intensity) and the laser parameters transmitted through the second hole (denoted as the second laser parameters, including illumination duration and laser intensity), an overall cost that integrates energy and time is constructed as the objective function. Then, multiple rounds of optimization iterations are performed based on the above constraints and objective function to determine the set of first and second laser parameters that minimizes the overall cost. Furthermore, when performing the second type of etching, the illumination duration and / or intensity of the laser irradiating the core layer through the first hole can be adjusted and controlled according to the first laser parameters; at the same time, the illumination duration and / or intensity of the laser irradiating the core layer through the second hole can be adjusted and controlled according to the second laser parameters, so as to accurately etch a fifth hole with high precision on the core layer.

[0174] After reconstructing the first and second holes, when the relative distance between the center positions of the matching first and second holes is greater than a preset lower limit of the first distance, but less than or equal to half the sum of the diameters of the two holes, refer to... Figure 8 As shown, depending on the application scenario and according to the preset processing rules, lasers can be used to etch the core layer by passing through the first hole alone, the second hole alone, or both holes simultaneously, to obtain target holes of different shapes.

[0175] The aforementioned target hole can be used as a sound hole in microphone production. It can effectively change the airflow inside the microphone, reduce the direct impact on the diaphragm, thereby better protecting the diaphragm and obtaining relatively better sound effects. In addition, it can also achieve relatively better dustproof and waterproof effects.

[0176] In some embodiments, after a fifth hole is formed on the core layer to obtain a target hole based on a hybrid layer, consisting of the first hole, the fifth hole, and the second hole, the method may further include the following: setting a protective layer on the outer surface of the modified target substrate containing the target hole. This effectively protects the target hole and prevents its shape and structure from deforming due to corrosion or other effects.

[0177] In some embodiments, the first and second holes may specifically include trapezoidal holes; the third and fourth holes may specifically include trapezoidal holes. Further, the diameter of the first and second holes closer to the core layer is larger than the diameter of the holes farther from the core layer; the diameter of the third and fourth holes closer to the core layer is larger than the diameter of the holes farther from the core layer.

[0178] In addition, a light-concentrating coating can be provided on the inner wall of the first hole, the second hole, the third hole, and the fourth hole.

[0179] Based on the above embodiments, by introducing and using the trapezoidal holes as the first, second, third, and fourth holes, the structural characteristics of the trapezoidal holes can be fully utilized to focus the laser light passing through the first, second, third, and fourth holes. In this way, on the one hand, the laser divergence phenomenon during the etching of the core layer can be effectively reduced, avoiding the difference in aperture at different depths of the fifth hole etched on the core layer, further reducing errors and improving the hole quality; on the other hand, the laser energy can be more fully focused and utilized to complete the etching, avoiding energy waste.

[0180] In some embodiments, see Figure 9 As shown, the above-mentioned provision of a protective layer on the outer surface of the modified target substrate containing the target hole can be implemented by performing a chemical nickel-plating immersion gold operation on the outer surfaces of the first and second metal layers of the target hole, as well as the outer surfaces of the structural components connected to the first or second metal layers, to form a plating layer at the corresponding outer surface position as the protective layer.

[0181] Accordingly, the aforementioned protective layer can specifically be a combination of a nickel layer (e.g., Ni) and a gold layer (e.g., Gold).

[0182] Specifically, the aforementioned electroless nickel immersion gold (ENIG) can be understood as a surface treatment process without electrodeposition. By performing electroless nickel plating and immersion gold, a coating that is both protective and solderable can be formed, thereby effectively protecting the remaining first metal layer and the remaining second metal layer and preventing the first and second holes in the target hole from deforming due to corrosion.

[0183] In some embodiments, after obtaining the target hole based on the hybrid layer, the target hole can further be used as a sound hole (e.g., an acoustic port-hole), and a corresponding micro-electro-mechanical system (MEMS) chip can be placed above the sound hole on the substrate; wherein the MEMS chip is also provided with a diaphragm; simultaneously, a corresponding application-specific integrated circuit (ASIC) can be placed at other suitable locations on the substrate besides the sound hole, and a corresponding encapsulation (e.g., polymer foil) can be placed over the ASIC; then the MEMS chip and the ASIC are connected by wire bonding, and a corresponding metal can is provided on the substrate to cover the MEMS chip and the ASIC; wherein the metal can is also provided with a guard ring. This allows the fabrication of a MEMS microphone with relatively good sound effects. For details, please refer to [reference needed]. Figure 17 As shown.

[0184] As can be seen from the above, the substrate opening method provided in this specification, after obtaining the target substrate to be opened, firstly, performs a first type of etching operation on the first metal layer and the second metal layer on the surface of the core layer of the target substrate to open matching first holes and second holes on the first metal layer and the second metal layer, respectively; then, performs modification processing on the outside of the first metal layer and the second metal layer to obtain a modified target substrate; then, performs a first type of etching operation on the newly generated third metal layer and the fourth metal layer in the modified target substrate to open matching third holes and fourth holes on the third metal layer and the fourth metal layer, respectively; then, performs a second type of etching operation on the core layer and the newly generated first intermediate layer and the second intermediate layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain target holes based on a hybrid layer. This allows for the efficient and precise opening of small-sized, complex-structured micro-holes suitable for manufacturing microphone devices on the substrate, which can then be used as sound holes to manufacture microphone devices with good sound effects.

[0185] See Figure 10As shown in the embodiments of this specification, another method for creating holes in a substrate is also provided. In specific implementation, this method may include the following:

[0186] S1001: Obtain a target substrate; wherein the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on the first surface and the second surface of the first core layer;

[0187] S1002: Perform a first type of etching operation on the first metal layer to open a corresponding first hole on the first metal layer;

[0188] S1003: Modification treatment is performed on the outside of the first metal layer of the target substrate to obtain the modified target substrate; wherein, a second core layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer in the modified target substrate.

[0189] S1004: Perform a first type of etching operation on the second metal layer and the third metal layer respectively to open a matching second hole and a third hole on the second metal layer and the third metal layer respectively;

[0190] S1005: Through the second hole, the third hole, and the first hole, perform the second type of etching operation on the first core layer and the second core layer respectively to obtain the target hole based on the first metal layer.

[0191] In some embodiments, modification processing is performed on the outside of the first metal layer of the target substrate. Specifically, this may include the following: performing prepreg processing, adding a third metal layer, and laminating processing sequentially on the side of the first metal layer of the target substrate away from the core layer.

[0192] In practice, prepreg and a third metal layer can be added sequentially to the side of the first metal layer of the target substrate away from the core layer; then, the second and third metal layers are laminated to obtain the modified target substrate. (See also...) Figure 11 As shown.

[0193] In some embodiments, the first metal layer, the second metal layer, and the third metal layer may specifically be copper layers, and the first core layer and the second core layer may specifically be resin layers.

[0194] Of course, the first metal layer, second metal layer, third metal layer, first core layer, and second core layer listed above are merely illustrative. In specific implementations, depending on the specific application scenario and processing requirements, the first metal layer, second metal layer, and third metal layer can also be metal layers made of other materials, such as titanium layers. Furthermore, the first metal layer, second metal layer, and third metal layer can also be metal layers made of different materials. The first core layer and second core layer can also be non-metallic layers made of other materials, such as fiberglass layers. Furthermore, the first core layer and second core layer can also be non-metallic layers made of different materials.

[0195] In some embodiments, the first type of etching operation may specifically include chemical etching, and the second type of etching operation may specifically include laser etching.

[0196] In some embodiments, see Figure 12 As shown, the second type of etching operation is performed on the first core layer and the second core layer through the second hole, the third hole, and the first hole, respectively, to obtain the target hole based on the first metal layer. In specific implementation, the following may be included:

[0197] S1: Determine the matching target wavelength based on the materials of the first metal layer, the second metal layer, the third metal layer, and the first core layer and the second core layer;

[0198] S2: Using a laser of the target wavelength, the first core layer, the second core layer, and the first metal layer in the corresponding areas are etched through the second hole, the third hole, and the first hole to obtain the target hole based on the first metal layer.

[0199] In practice, a carbon dioxide laser can be used to emit laser light of the target wavelength to perform the second type of etching operation.

[0200] The above-mentioned method of using a laser of the target wavelength to etch the first core layer, second core layer, and first metal layer in the corresponding area through the second hole, third hole, and first hole can be implemented in the following ways: first, using a laser of the target wavelength to etch the second core layer and the first core layer through the second hole and the third hole respectively to obtain the corresponding second intermediate hole and first intermediate hole; then, using a laser of the target wavelength to etch the first metal layer through the first intermediate hole and the first hole; and / or, using a laser of the target wavelength to etch the first metal layer through the second intermediate hole and the first hole.

[0201] When performing the second type of etching operation using a laser of the target wavelength, the laser of the target wavelength can be emitted onto the substrate from top to bottom. The laser passing through the first hole will irradiate the second core layer and, constrained by the first hole, etch a hole penetrating the second core layer, denoted as the second intermediate hole. Simultaneously, the laser of the target wavelength can be emitted onto the substrate from bottom to top. The laser passing through the second hole will irradiate the first core layer and, constrained by the second hole, etch a hole penetrating the first core layer, denoted as the first intermediate hole. Further, the laser of the target wavelength can continue to be emitted onto the substrate from top to bottom (or from bottom to top). The laser passing through the second intermediate hole and constrained by the second intermediate hole can irradiate the original first metal layer and etch away the prepreg filling the original first metal layer, restoring the previously etched first hole, thereby obtaining a target hole based on the first metal layer that meets the requirements. Alternatively, lasers of the target wavelength can be emitted from top to bottom onto the substrate, and lasers of the target wavelength can be emitted from bottom to top onto the substrate. By passing through the second intermediate hole and the first intermediate hole, the original first metal layer can be irradiated with two laser beams, one constrained by the second intermediate hole and the other by the first intermediate hole, so as to more quickly restore the previously etched first hole and obtain a target hole based on the first gold beam layer that meets the requirements.

[0202] The target hole obtained using the above method is a metal hole based on the first metal layer, and the target hole itself has good conductivity. Therefore, by grounding the target hole, static electricity can be eliminated, and the target hole can be used as a sound hole in a microphone device; furthermore, the sound hole can form a grounded shielding closed loop with the metal cover and the substrate (or the internal circuitry of the printed circuit board), as described above. Figure 17 As shown, this can effectively improve the anti-interference capability against interference signals such as radio frequency signals.

[0203] In some embodiments, after obtaining the target hole based on the first metal layer, the method may further include the following: grounding the target hole.

[0204] In some embodiments, after obtaining the target hole based on the first metal layer, the method may further include the following: depositing a protective layer on the outer surface of the modified target substrate containing the target hole. See details [link to relevant documentation]. Figure 13 As shown.

[0205] In some embodiments, the matching second and third holes include: second and third holes whose relative distance between the hole centers and / or hole diameters meet a preset first requirement.

[0206] See Figure 14As shown in the embodiments of this specification, a sound hole structure is also provided, comprising at least a mixing layer, wherein a first structural member is disposed on a first surface of the mixing layer, and a second structural member is disposed on a second surface of the mixing layer; wherein,

[0207] The hybrid layer includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on both sides of the core layer; the hybrid layer also has a target hole, which is sequentially connected to the first metal layer, the core layer and the second metal layer;

[0208] The first structural component is connected to the first metal layer, and the second structural component is connected to the second metal layer.

[0209] In some embodiments, the first structural member includes at least an intermediate structural layer and a metal structural layer; wherein the intermediate structural layer is connected to the first metal layer.

[0210] Similarly, the second structural component includes at least an intermediate structural layer and a metal layer; wherein the intermediate structural layer is connected to the second metal layer.

[0211] In some embodiments, the first metal layer, the second metal layer, and the metal structure layer are made of copper, the core layer is made of ceramic, and the intermediate structure layer is made of resin.

[0212] Of course, it should be noted that the first metal layer, second metal layer, metal structural layer, core layer, and intermediate structural layer listed above are only illustrative. In actual implementation, depending on the specific application scenario and processing requirements, the first metal layer, second metal layer, metal structural layer, core layer, and intermediate structural layer may also be made of other materials.

[0213] In some embodiments, a protective layer is further provided on the outer surface of the first metal layer, the second metal layer, and the metal structural layer. The metal layers used to protect the surfaces of the target hole, the first structural member, and the second structural member can effectively prevent oxidation of the metal layers on the relevant structural surfaces.

[0214] In some embodiments, the aforementioned sound hole structure can be used to fabricate a microphone device, such as a MEMS microphone. This allows for full utilization of the characteristics of the sound hole structure, resulting in a microphone device with good sound quality and high performance.

[0215] In practice, while using the target hole as a sound hole, the target hole can also be used to form a capacitor structure. This capacitor structure can then be used to improve the filtering effect of the microphone device, thereby enabling the microphone device to achieve better sound effects.

[0216] This specification provides an electronic device through its embodiments. (See attached document.) Figure 15As shown. The electronic device includes a network communication port 1501, a processor 1502, and a memory 1503. These structures are connected by internal cables so that they can perform specific data interaction.

[0217] Specifically, the network communication port 1501 can be used to receive hole-opening instructions for the target substrate.

[0218] The processor 1502 is specifically configured to respond to an opening command and acquire a target substrate. The target substrate includes at least a core layer, with a first metal layer and a second metal layer respectively disposed on a first surface and a second surface. A first type of etching operation is performed on the first metal layer and the second metal layer to create matching first and second holes. Modification processes are performed on the outer sides of the first and second metal layers of the target substrate to obtain a modified target substrate. In the modified target substrate, a first intermediate layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer, and a second intermediate layer and a fourth metal layer are sequentially disposed on the side of the second metal layer away from the core layer. A first type of etching operation is performed on the third metal layer and the fourth metal layer to create matching third and fourth holes. A second type of etching operation is performed on the first intermediate layer, the second intermediate layer, and the core layer through the third and fourth holes, as well as the first and / or second holes, to obtain target holes based on a hybrid layer.

[0219] The memory 1503 can be used to store the corresponding instruction program, as well as intermediate data such as hole-opening instructions.

[0220] Based on the above method, the relevant structural performance of electronic devices can be effectively utilized to improve the data processing speed of electronic devices and efficiently realize the relevant data processing of the openings in the substrate.

[0221] In this embodiment, the network communication port 1501 can be a virtual port bound to different communication protocols, thereby enabling the sending or receiving of different data. For example, the network communication port can be a port responsible for web data communication, a port responsible for FTP data communication, or a port responsible for email data communication. Furthermore, the network communication port can also be a physical communication interface or communication chip. For example, it can be a wireless mobile network communication chip, such as GSM or CDMA; it can also be a Wi-Fi chip; or it can be a Bluetooth chip.

[0222] In this embodiment, the processor 1502 can be implemented in any suitable manner. For example, the processor can take the form of a microprocessor or processor and a computer-readable medium storing computer-readable program code (e.g., software or firmware) executable by the (micro)processor, logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers, etc. This specification is not limiting.

[0223] In this embodiment, the memory 1503 may include multiple layers. In a digital system, anything that can store binary data can be a memory. In an integrated circuit, a circuit with storage function but no physical form is also called a memory, such as RAM, FIFO, etc. In a system, a storage device with a physical form is also called a memory, such as a memory stick, TF card, etc.

[0224] This specification also provides a computer-readable storage medium based on the above-described substrate aperture method. The computer-readable storage medium stores computer program instructions that, when executed, perform the following: obtaining a target substrate; wherein the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the core layer; performing a first type of etching operation on the first metal layer and the second metal layer to create matching first holes and second holes on the first metal layer and the second metal layer respectively; performing modification processing on the outer sides of the first metal layer and the second metal layer of the target substrate to obtain a modified target substrate; wherein, in the modified target substrate, a first intermediate layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer, and a second intermediate layer and a fourth metal layer are sequentially disposed on the side of the second metal layer away from the core layer; performing a first type of etching operation on the third metal layer and the fourth metal layer to create matching third holes and fourth holes on the third metal layer and the fourth metal layer respectively; performing a second type of etching operation on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain a target hole based on a hybrid layer.

[0225] This specification also provides another computer-readable storage medium based on the above-described substrate opening method, wherein the computer-readable storage medium stores computer program instructions that, when executed, implement: obtaining a target substrate; wherein the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the first core layer; performing a first type of etching operation on the first metal layer to open a corresponding first hole on the first metal layer; performing a modification process on the outside of the first metal layer of the target substrate to obtain a modified target substrate; wherein a second core layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer in the modified target substrate; performing a first type of etching operation on the second metal layer and the third metal layer respectively to open a matching second hole and a third hole on the second metal layer and the third metal layer respectively; performing a second type of etching operation on the first core layer and the second core layer through the second hole, the third hole, and the first hole respectively to obtain a target hole based on the first metal layer.

[0226] In this embodiment, the storage medium includes, but is not limited to, Random Access Memory (RAM), Read-Only Memory (ROM), cache, hard disk drive (HDD), or memory card. The memory can be used to store computer program instructions. The network communication unit can be an interface configured according to standards specified in the communication protocol for network connection communication.

[0227] In this embodiment, the specific functions and effects implemented by the program instructions stored in the computer-readable storage medium can be explained in comparison with other embodiments, and will not be repeated here.

[0228] This specification also provides a computer program product, comprising at least a computer program, which, when executed by a processor, implements the following method steps: obtaining a target substrate; wherein the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the core layer; performing a first type of etching operation on the first metal layer and the second metal layer to form matching first holes and second holes on the first metal layer and the second metal layer respectively; performing modification processing on the outer sides of the first metal layer and the second metal layer of the target substrate to obtain a modified target substrate; wherein, in the modified target substrate, a first intermediate layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer, and a second intermediate layer and a fourth metal layer are sequentially disposed on the side of the second metal layer away from the core layer; performing a first type of etching operation on the third metal layer and the fourth metal layer to form matching third holes and fourth holes on the third metal layer and the fourth metal layer respectively; performing a second type of etching operation on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain target holes based on a hybrid layer.

[0229] This specification also provides another computer program product, which includes at least a computer program that, when executed by a processor, performs the following method steps: obtaining a target substrate; wherein the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on a first surface and a second surface of the first core layer; performing a first type of etching operation on the first metal layer to open a corresponding first hole in the first metal layer; performing a modification process on the outside of the first metal layer of the target substrate to obtain a modified target substrate; wherein a second core layer and a third metal layer are sequentially disposed on the side of the first metal layer away from the core layer in the modified target substrate; performing a first type of etching operation on the second metal layer and the third metal layer respectively to open a matching second hole and a third hole in the second metal layer and the third metal layer respectively; performing a second type of etching operation on the first core layer and the second core layer through the second hole, the third hole, and the first hole to obtain a target hole based on the first metal layer.

[0230] See Figure 16 As shown in the embodiments of this specification, an opening device for a substrate is also provided, which may specifically include the following structural modules:

[0231] The acquisition module 1601 can be specifically used to acquire a target substrate; wherein, the target substrate includes at least a core layer, and a first metal layer and a second metal layer are respectively disposed on the first surface and the second surface of the core layer.

[0232] The first etching module 1602 is specifically used to perform a first type of etching operation on the first metal layer and the second metal layer respectively, so as to open a matching first hole and a second hole on the first metal layer and the second metal layer respectively.

[0233] The modification module 1603 can be used to perform modification processing on the outside of the first metal layer and the second metal layer of the target substrate respectively to obtain the modified target substrate; wherein, in the modified target substrate, the first metal layer away from the core layer is provided with a first intermediate layer and a third metal layer in sequence, and the second metal layer away from the core layer is provided with a second intermediate layer and a fourth metal layer in sequence.

[0234] The second etching module 1604 can be used to perform the first type of etching operation on the third metal layer and the fourth metal layer respectively, so as to open the matching third hole and fourth hole on the third metal layer and the fourth metal layer respectively.

[0235] The third etching module 1605 can be used to perform a second type of etching operation on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole to obtain target holes based on the hybrid layer.

[0236] In some embodiments, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer may specifically be copper layers, the core layer may specifically be a ceramic layer, and the first intermediate layer and the second intermediate layer may specifically be resin layers.

[0237] In some embodiments, the first type of etching operation may specifically include chemical etching, and the second type of etching operation may specifically include laser etching.

[0238] In some embodiments, when the third etching module 1605 is specifically implemented, a second type of etching operation can be performed on the first intermediate layer, the second intermediate layer, and the core layer through the third hole, the fourth hole, and the first hole and / or the second hole in the following manner: a matching target wavelength is determined based on the materials of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, and the materials of the first intermediate layer, the second intermediate layer, and the core layer; using a laser of the target wavelength, the first intermediate layer, the core layer, and the second intermediate layer in the corresponding areas are etched through the third hole, the fourth hole, and the first hole and / or the second hole, respectively.

[0239] In some embodiments, the third etching module 1605 described above can be implemented in the following manner: using a laser of the target wavelength, etching the first intermediate layer, the core layer, and the second intermediate layer in the corresponding regions through the third hole, the fourth hole, the first hole, and / or the second hole respectively; using a laser of the target wavelength, etching the first intermediate layer and the second intermediate layer through the third hole and the fourth hole respectively to obtain the corresponding first intermediate hole and the second intermediate hole; using a laser of the target wavelength, etching the core layer through the first intermediate hole and the first hole respectively; and / or, using a laser of the target wavelength, etching the core layer through the second intermediate hole and the second hole respectively.

[0240] In some embodiments, the matching first hole and second hole may specifically include: a first hole and a second hole whose relative distance between the hole center positions and / or hole diameter meet a preset first requirement;

[0241] The matching third and fourth holes may specifically include: third and fourth holes whose relative distance between the hole centers and / or whose hole diameters meet a preset second requirement.

[0242] In some embodiments, when the above-mentioned modification module 1603 is specifically implemented, modification processing can be performed on the outside of the first metal layer and the second metal layer of the target substrate in the following manner to obtain the modified target substrate: on the side of the first metal layer of the target substrate away from the core layer, prepreg processing and the addition of a third metal layer are performed in sequence; at the same time, on the side of the second metal layer of the target substrate away from the core layer, prepreg processing and the addition of a fourth metal layer are performed in sequence; the third metal layer and the fourth metal layer are laminated to obtain the modified target substrate.

[0243] In some embodiments, after obtaining the target hole based on the hybrid layer, the apparatus may also be used to: deposit a protective layer on the outer surface of the modified target substrate containing the target hole.

[0244] This specification also provides another substrate opening device, which may specifically include the following structural modules:

[0245] The acquisition module can be specifically used to acquire a target substrate; wherein, the target substrate includes at least a first core layer, and a first metal layer and a second metal layer are respectively disposed on the first surface and the second surface of the first core layer;

[0246] The first etching module can be used to perform a first type of etching operation on the first metal layer in order to open a corresponding first hole on the first metal layer.

[0247] The modification module can be used to modify the outer side of the first metal layer of the target substrate to obtain the modified target substrate; wherein, the first metal layer of the modified target substrate is provided with a second core layer and a third metal layer on the side away from the core layer.

[0248] The second etching module can be used to perform first-type etching operations on the second metal layer and the third metal layer respectively, so as to open matching second holes and third holes on the second metal layer and the third metal layer respectively.

[0249] The third etching module can be used to perform a second type of etching operation on the first core layer and the second core layer through the second hole, the third hole, and the first hole, respectively, to obtain a target hole based on the first metal layer.

[0250] In some embodiments, the first metal layer, the second metal layer, and the third metal layer may specifically be copper layers, and the first core layer and the second core layer may specifically be resin layers.

[0251] In some embodiments, the first type of etching operation may specifically include chemical etching, and the second type of etching operation may specifically include laser etching.

[0252] In some embodiments, when the third etching module is specifically implemented, the second type of etching operation can be performed on the first core layer and the second core layer through the second hole, the third hole, and the first hole respectively to obtain the target hole based on the first metal layer: the matching target wavelength is determined according to the materials of the first metal layer, the second metal layer, the third metal layer, and the first core layer; the first core layer, the second core layer, and the first metal layer in the corresponding area are etched using a laser of the target wavelength through the second hole, the third hole, and the first hole to obtain the target hole based on the first metal layer.

[0253] In some embodiments, when the above-mentioned modification module is specifically implemented, the modification process can be carried out on the outside of the first metal layer of the target substrate in the following manner: prepreg treatment, addition of a third metal layer, and lamination treatment are carried out sequentially on the side of the first metal layer of the target substrate away from the core layer.

[0254] In some embodiments, after obtaining the target hole based on the first metal layer, the device may also be used to ground the target hole in a specific implementation.

[0255] It should be noted that the units, devices, or modules described in the above embodiments can be implemented by computer chips or physical entities, or by products with certain functions. For ease of description, the above devices are described by dividing them into various modules according to their functions. Of course, in implementing this specification, the functions of each module can be implemented in one or more software and / or hardware, or the module that implements the same function can be implemented by a combination of multiple sub-modules or sub-units, etc. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection between the devices or units shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or units can be electrical, mechanical, or other forms.

[0256] As can be seen from the above, the substrate opening device provided in the embodiments of this specification can efficiently and accurately open micro-holes on the substrate that are small in size, complex in structure, and suitable for manufacturing microphone devices.

[0257] While this specification provides the steps of operation for the methods described in the embodiments or flowcharts, more or fewer steps may be included based on conventional or non-inventive means. The order of steps listed in the embodiments is merely one possible order of execution among many steps and does not represent the only possible order. In actual device or client product execution, the methods shown in the embodiments or drawings may be executed sequentially or in parallel (e.g., in a parallel processor or multi-threaded processing environment, or even a distributed data processing environment). The terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, product, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, product, or apparatus. Without further limitations, the presence of other identical or equivalent elements in a process, method, product, or apparatus that includes said elements is not excluded. The terms "first," "second," etc., are used to denote names and do not indicate any particular order.

[0258] Those skilled in the art will also know that, besides implementing the controller using purely computer-readable program code, the same functions can be achieved by logically programming the method steps, making the controller function as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers (PLCs), and embedded microcontrollers. Therefore, such a controller can be considered a hardware component, and the devices within it used to implement various functions can also be considered structures within that hardware component. Alternatively, the devices used to implement various functions can be considered as both software modules implementing the method and structures within a hardware component.

[0259] This specification can be described in the general context of computer-executable instructions that are executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, classes, etc., that perform a specific task or implement a specific abstract data type. This specification can also be practiced in distributed computing environments, where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer-readable storage media, including storage devices.

[0260] As can be seen from the above description of the embodiments, those skilled in the art can clearly understand that this specification can be implemented by means of software plus necessary general-purpose hardware platforms. Based on this understanding, the technical solutions of this specification can essentially be embodied in the form of a software product. This computer software product can be stored in a storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, mobile terminal, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments of this specification.

[0261] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. This specification can be used in numerous general-purpose or special-purpose computer system environments or configurations. Examples include: personal computers, server computers, handheld or portable devices, tablet devices, multiprocessor systems, microprocessor-based systems, set-top boxes, programmable electronic devices, network PCs, minicomputers, mainframe computers, and distributed computing environments including any of the above systems or devices, etc.

[0262] Although this specification has been described by way of examples, those skilled in the art will recognize that many variations and modifications are possible without departing from the spirit of this specification, and it is intended that the appended claims cover such variations and modifications without departing from the spirit of this specification.

Claims

1. A method of opening a hole in a substrate, characterized by, The application relates to a method for manufacturing a target substrate for a microphone device. The method comprises the following steps: obtaining a target substrate; wherein the target substrate comprises at least a core layer, and a first surface and a second surface of the core layer are respectively provided with a first metal layer and a second metal layer; the core layer is a ceramic layer; respectively performing a first type of etching operation on the first metal layer and the second metal layer to respectively form a first hole and a second hole matched with the first metal layer and the second metal layer; the first type of etching operation comprises chemical etching which is effective on the materials of the first metal layer, the second metal layer, a third metal layer and a fourth metal layer, and is ineffective on the materials of the core layer, a first intermediate layer and a second intermediate layer; respectively performing a modification treatment on the outside of the first metal layer and the second metal layer of the target substrate to obtain a modified target substrate; wherein the side, away from the core layer, of the first metal layer in the modified target substrate is sequentially provided with the first intermediate layer and the third metal layer, and the side, away from the core layer, of the second metal layer is sequentially provided with the second intermediate layer and the fourth metal layer; respectively performing the first type of etching operation on the third metal layer and the fourth metal layer to respectively form a third hole and a fourth hole matched with the third metal layer and the fourth metal layer; respectively performing a second type of etching operation on the first intermediate layer, the second intermediate layer and the core layer through the third hole, the fourth hole and the first hole and / or the second hole to obtain a target hole based on a mixed layer; the second type of etching operation comprises laser etching which is effective on the materials of the core layer, the first intermediate layer and the second intermediate layer, and is ineffective on the materials of the first metal layer, the second metal layer, the third metal layer and the fourth metal layer; 2. The method of claim 1, wherein, the target hole is used as a sound hole to access the microphone device; the upper end and the lower end of the target hole are grounded to eliminate the static electricity of the sound hole of the microphone and improve the anti-interference ability of the microphone to radio frequency signals.

3. The method of claim 1, wherein, The first metal layer, the second metal layer, the third metal layer and the fourth metal layer are copper layers, and the first intermediate layer and the second intermediate layer are resin layers. The second type of etching operation on the first intermediate layer, the second intermediate layer and the core layer through the third hole, the fourth hole and the first hole and / or the second hole comprises the following steps: determining a target wavelength matched with the materials of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the first intermediate layer, the second intermediate layer and the core layer; 4. The method of claim 3, wherein, using the laser with the target wavelength to etch the first intermediate layer, the core layer and the second intermediate layer in the corresponding regions through the third hole, the fourth hole and the first hole and / or the second hole. The step of using the laser with the target wavelength to etch the first intermediate layer, the core layer and the second intermediate layer in the corresponding regions through the third hole, the fourth hole and the first hole and / or the second hole comprises the following steps: using the laser with the target wavelength to etch the first intermediate layer and the second intermediate layer through the third hole and the fourth hole to obtain a first intermediate hole and a second intermediate hole; 5. The method of claim 1, wherein, using the laser with the target wavelength to etch the core layer through the first intermediate hole and the first hole; and / or using the laser with the target wavelength to etch the core layer through the second intermediate hole and the second hole. The step of respectively performing a modification treatment on the outside of the first metal layer and the second metal layer of the target substrate to obtain a modified target substrate comprises the following steps: On the side of the first metal layer of the target substrate far from the core layer, a prepreg treatment and a third metal layer treatment are sequentially performed; meanwhile, on the side of the second metal layer of the target substrate far from the core layer, a prepreg treatment and a fourth metal layer treatment are sequentially performed; The third metal layer and the fourth metal layer are laminated to obtain a reformed target substrate.

6. The method of claim 1, wherein, The matched first hole and the second hole include: the relative distance between the hole centers and / or the hole diameters meet a preset first requirement; The matched third hole and the fourth hole include: the relative distance between the hole centers and / or the hole diameters meet a preset second requirement.

7. The method of claim 1, wherein, After obtaining the target hole based on the mixed layer, the method further includes: A protective layer is arranged on the outer surface of the reformed target substrate containing the target hole.

8. A method of forming an aperture in a substrate, the method comprising: It includes: A target substrate is obtained; wherein the target substrate at least includes a first core layer, and a first surface and a second surface of the first core layer are respectively provided with a first metal layer and a second metal layer; A first type of etching operation is performed on the first metal layer to open a corresponding first hole on the first metal layer; the first type of etching operation includes: chemical etching which is effective to the materials of the first metal layer, the second metal layer and the third metal layer, and is ineffective to the materials of the first core layer and the second core layer; A reformation treatment is performed on the outside of the first metal layer of the target substrate to obtain a reformed target substrate; wherein the side of the first metal layer in the reformed target substrate far from the core layer is sequentially provided with a second core layer and a third metal layer; A first type of etching operation is performed on the second metal layer and the third metal layer respectively to open a matched second hole and a third hole on the second metal layer and the third metal layer respectively; A second type of etching operation is performed on the first core layer and the second core layer through the second hole, the third hole and the first hole to obtain a target hole based on the first metal layer; the second type of etching operation includes: laser etching which is effective to the materials of the first core layer and the second core layer, and is ineffective to the materials of the first metal layer, the second metal layer and the third metal layer; The target hole is used as a sound hole to access a microphone device; the upper and lower ends of the target hole are grounded to eliminate static electricity of the sound hole of the microphone and improve the anti-interference ability of the microphone to radio frequency signals; the first core layer and the second core layer are ceramic layers.

9. The method of claim 8, wherein, The first metal layer, the second metal layer and the third metal layer are copper layers, and the first core layer and the second core layer are resin layers.

10. The method of claim 8, wherein, The second type of etching operation is performed on the first core layer and the second core layer through the second hole, the third hole and the first hole to obtain a target hole based on the first metal layer, including: According to the materials of the first metal layer, the second metal layer and the third metal layer, and the materials of the first core layer and the second core layer, a target wavelength is determined; A laser with the target wavelength is used to etch the first core layer, the second core layer and the first metal layer in the corresponding regions through the second hole, the third hole and the first hole to obtain a target hole based on the first metal layer.

11. The method of claim 8, wherein, The reformation treatment on the outside of the first metal layer of the target substrate includes: The target substrate is obtained, and the target substrate includes a core layer, and first and second surfaces of the core layer are respectively provided with first and second metal layers.

12. The method of claim 8, wherein, After the target hole based on the first metal layer is obtained, the method further includes: The target hole is subjected to grounding treatment.

13. An apparatus for perforating a substrate, the apparatus comprising: The method includes: An acquisition module is configured to acquire a target substrate, wherein the target substrate includes at least a core layer, and first and second surfaces of the core layer are respectively provided with first and second metal layers; the core layer is a ceramic layer; A first etching module is configured to perform a first type of etching operation on the first and second metal layers respectively to form first and second holes respectively on the first and second metal layers; the first type of etching operation includes chemical etching that is effective on the materials of the first, second, third and fourth metal layers and ineffective on the materials of the core layer, the first and second intermediate layers; A modification module is configured to perform modification treatment on the first and second metal layers of the target substrate respectively to obtain a modified target substrate; wherein the first metal layer of the modified target substrate is provided with a first intermediate layer and a third metal layer in sequence on a side away from the core layer, and the second metal layer is provided with a second intermediate layer and a fourth metal layer in sequence on a side away from the core layer; A second etching module is configured to perform the first type of etching operation on the third and fourth metal layers respectively to form third and fourth holes respectively on the third and fourth metal layers; A third etching module is configured to perform a second type of etching operation on the first and second intermediate layers and the core layer through the third and fourth holes and the first and / or second holes to obtain a target hole based on a mixed layer; the second type of etching operation includes laser etching that is effective on the materials of the core layer, the first and second intermediate layers and ineffective on the materials of the first, second, third and fourth metal layers; The target hole is used as a sound hole to access a microphone device; the upper and lower ends of the target hole are grounded to eliminate static electricity of the sound hole of the microphone and improve the anti-interference ability of the microphone to radio frequency signals.

14. An apparatus for perforating a substrate, comprising: The method includes: An acquisition module is configured to acquire a target substrate, wherein the target substrate includes at least a first core layer, and first and second surfaces of the first core layer are respectively provided with first and second metal layers; A first etching module is configured to perform a first type of etching operation on the first metal layer to form a first hole on the first metal layer; the first type of etching operation includes chemical etching that is effective on the materials of the first, second and third metal layers and ineffective on the materials of the first and second core layers; A modification module is configured to perform modification treatment on the first metal layer of the target substrate to obtain a modified target substrate; wherein the first metal layer of the modified target substrate is provided with a second core layer and a third metal layer in sequence on a side away from the core layer; A second etching module is configured to perform the first type of etching operation on the second and third metal layers respectively to form second and third holes respectively on the second and third metal layers; A third etching module is configured to perform a second type of etching operation on the first core layer and the second core layer through the second hole, the third hole, and the first hole to obtain a target hole based on the first metal layer; the second type of etching operation includes laser etching which is effective to materials of the first core layer and the second core layer and ineffective to materials of the first metal layer, the second metal layer, and the third metal layer. The target hole is used as a sound hole to access a microphone device, and upper and lower ends of the target hole are grounded to eliminate static electricity of the sound hole of the microphone and improve anti-interference capability of the microphone to radio frequency signals; the first core layer and the second core layer are ceramic layers.

15. An electronic device, comprising: A processor and a memory for storing processor-executable instructions are included, and the processor executes the instructions to implement steps of the method in any one of claims 1 to 12.

16. A computer-readable storage medium, characterized in that, A computer program is stored thereon, and the program is executed by a processor to implement steps of the method in any one of claims 1 to 12.

17. A computer program product, characterised in that, A computer program is stored thereon, and the program is executed by a processor to implement steps of the method in any one of claims 1 to 12.

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