Deviation correction visual alignment method and device for photovoltaic cells

Abstract

The invention discloses a correction visual alignment method and device for a photovoltaic cell, and the method comprises the steps: collecting a detection image of a silicon wafer in a detection region, and carrying out the preprocessing of the detection image, the preprocessing comprises distortion correction, and the silicon wafer comprises a first silicon wafer and a second silicon wafer; respectively determining boundary positions of the first silicon wafer and the second silicon wafer; determining a first silicon wafer position coordinate and a second silicon wafer position coordinate based on the boundary position, and converting the first silicon wafer position coordinate and the second silicon wafer position coordinate to a deviation rectification table coordinate system through coordinate system conversion to obtain a first deviation rectification position coordinate and a second deviation rectification position coordinate; calculating a first deviation rectification value between the first deviation rectification position coordinate and the first target position coordinate, adjusting the first deviation rectification table according to the first deviation rectification value until the first silicon wafer reaches the first target position, and calculating a second deviation rectification value between the second deviation rectification position coordinate and the second target position coordinate, and according to the second deviation correction value, adjusting the second deviation correction table until the second silicon wafer reaches the second target position.

Description

Technical Field

[0001] The present application relates to the field of visual correction, and more specifically, to a method and device for visual alignment of photovoltaic cells. Background Art

[0002] In the production process of photovoltaic cells, silicon wafers are the basic materials for the production of photovoltaic cells. Silicon wafers are usually cut from silicon materials and go through steps such as functional layer preparation, coating, screen printing or laser transfer to complete the preparation of the cells. Between different steps in the production process, the cells need to be positioned to ensure processing accuracy, and the silicon wafers need to be visually aligned and corrected in advance.

[0003] In the existing visual correction method, the characteristic straight lines in the detection image are generally detected, and the center coordinates and deflection angles of the silicon wafer are obtained through the multiple weighted average method. The position of the silicon wafer is corrected based on the affine transformation method. However, there are problems of low correction efficiency and low accuracy. Summary of the Invention

[0004] In response to at least one defect or improvement need in the prior art, the present invention provides a method and device for visual alignment of photovoltaic cells, which solves the problems of low correction efficiency and low accuracy, and achieves the goals of improving production speed, high precision, and full automation.

[0005] To achieve the above-mentioned purpose, according to the first aspect of the present invention, a method for visual alignment of photovoltaic cell wafers is provided, the method comprising: collecting a detection image of a silicon wafer in a detection area, and preprocessing the detection image, wherein the preprocessing comprises distortion correction, and the silicon wafer comprises a first silicon wafer and a second silicon wafer; respectively determining the boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are the boundary positions of the four sides of the first silicon wafer and the second silicon wafer in the image coordinate system; determining the position coordinates of the first silicon wafer and the second silicon wafer based on the boundary positions, and converting the position coordinates of the first silicon wafer and the second silicon wafer into the correction table coordinate system through coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates respectively; calculating a first correction value between the first correction position coordinates and the first target position coordinates, adjusting the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculating a second correction value between the second correction position coordinates and the second target position coordinates, and adjusting the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0006] In an exemplary embodiment, a detection image of a silicon wafer in a detection area is collected, and preprocessing of the detection image includes: illuminating the silicon wafer with a planar array open-hole light source arranged above the silicon wafer, and illuminating the edge area of ​​the silicon wafer with a strip light source arranged below the silicon wafer; collecting a detection image of the silicon wafer in the detection area with an industrial camera, wherein the detection image is a grayscale image; after obtaining the distortion parameters of the industrial camera by using checkerboard calibration, the detection image is preprocessed for distortion correction according to the distortion parameters.

[0007] In an exemplary embodiment, respectively determining the boundary positions of a first silicon wafer and a second silicon wafer includes: capturing boundary images of the first silicon wafer and the second silicon wafer to obtain first boundary images of four sides of the first silicon wafer and second boundary images of four sides of the second silicon wafer, respectively, wherein the boundary images are captured by a main camera and a plurality of auxiliary cameras; matching the first boundary images with the second boundary images according to an established edge contour template, and respectively determining the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer using a linear caliper method.

[0008] In an exemplary embodiment, after using a linear caliper method to respectively determine the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer, the above method further includes: mapping the boundary positions of the first boundary position and the second boundary position located by boundary images captured by multiple secondary cameras to the image coordinate system of the main camera through calibration; respectively calculating the intersection points of adjacent edges in the first silicon wafer and the second silicon wafer to obtain the first vertex position of the first silicon wafer and the second vertex position of the second silicon wafer, wherein the first vertex position includes the four vertex positions of the first silicon wafer and the second vertex position includes the four vertex positions of the second silicon wafer; and using weighted average to respectively calculate the first vertex position and the second vertex position to obtain the position coordinates of the first silicon wafer and the second silicon wafer.

[0009] In an exemplary embodiment, after the boundary positions located by the boundary images captured by multiple auxiliary cameras in the first boundary position and the second boundary position are mapped to the image coordinate system of the main camera through calibration, the above method further includes: determining a first angle value of a boundary located by the boundary images respectively captured by the main camera and one of the multiple auxiliary cameras of the first silicon wafer, and determining a second angle value of a boundary located by the boundary images respectively captured by the main camera and one of the multiple auxiliary cameras of the second silicon wafer; using angle weighted average to calculate the first angle value to determine the first angle information of the first silicon wafer, and using angle weighted average to calculate the second angle value to determine the second angle information of the second silicon wafer.

[0010] In an exemplary embodiment, after using angle weighted averaging to calculate the first angle value to determine the first angle information of the first silicon wafer and using angle weighted averaging to calculate the second angle value to determine the second angle information of the second silicon wafer, the above method also includes: in the image coordinate system of the main camera, converting the first silicon wafer position coordinates and the first angle information of the first silicon wafer to the correction table coordinate system through N-point calibration to obtain the first correction position coordinates and the first correction angle; in the image coordinate system of the main camera, converting the second silicon wafer position coordinates and the second angle information of the second silicon wafer to the correction table coordinate system through N-point calibration to obtain the second correction position coordinates and the second correction angle.

[0011] In an exemplary embodiment, the method further includes: obtaining first target position coordinates and a first target angle of a first silicon wafer preset on the correction table at a first target position, obtaining second target position coordinates and a second target angle of a second silicon wafer preset on the correction table at a second target position, wherein the first target position coordinates include a first X-axis coordinate and a first Y-axis coordinate, and the second target position coordinates include a second X-axis coordinate and a second Y-axis coordinate; performing visual alignment calculation on the first silicon wafer, determining a first correction value between the first correction position coordinates and the first target position coordinates, determining a first correction angle value between the first correction angle and the first target angle, and adjusting the first correction table according to the first correction value and the first correction angle value until the first silicon wafer reaches the first target position; performing visual alignment calculation on the second silicon wafer, determining a second correction value between the second correction position coordinates and the second target position coordinates, determining a second correction angle value between the second correction angle and the second target angle, and adjusting the second correction table according to the second correction value and the second correction angle value until the second silicon wafer reaches the second target position.

[0012] According to a second aspect of the present invention, a visual alignment device for correcting photovoltaic cells is also provided, which includes: an acquisition unit for acquiring a detection image of a silicon wafer in a detection area and preprocessing the detection image, wherein the preprocessing includes distortion correction, and the silicon wafer includes a first silicon wafer and a second silicon wafer; a first determination unit for respectively determining the boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are the boundary positions of the four sides of the first silicon wafer and the second silicon wafer in the image coordinate system; a first conversion unit for determining the position coordinates of the first silicon wafer and the second silicon wafer based on the boundary positions, and converting the position coordinates of the first silicon wafer and the second silicon wafer into the correction table coordinate system through coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates, respectively; a first correction unit for calculating a first correction value between the first correction position coordinates and the first target position coordinates, adjusting the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculating a second correction value between the second correction position coordinates and the second target position coordinates, and adjusting the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0013] According to a third aspect of the present invention, a computer-readable storage medium is provided, in which a computer program is stored, wherein the computer program is configured to execute the above-mentioned photovoltaic cell correction visual alignment method when running.

[0014] According to a fourth aspect of the present invention, an electronic device is also provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the above-mentioned photovoltaic cell correction visual alignment method through the computer program.

[0015] In general, the above technical solutions conceived by the present invention can achieve the following beneficial effects compared with the prior art:

[0016] The present invention provides a method for visual alignment of photovoltaic cells. The method captures an image of the silicon wafer and performs image preprocessing and distortion correction. Furthermore, the method detects the silicon wafer area and locates the positions of the four edges of the silicon wafer. Furthermore, the silicon wafer position coordinates are converted to a correction table coordinate system. Finally, the silicon wafer is visually aligned and corrected in advance. The present invention provides a method for visual alignment of photovoltaic cells in advance, which is used for visual alignment and correction of silicon wafers in advance during photovoltaic production. It features high production speed, high precision, and full automation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 A schematic flow chart of an optional photovoltaic cell correction and visual alignment method provided in an embodiment of the present application;

[0019] Figure 2 A schematic diagram of an optional photovoltaic cell correction and visual alignment method provided in an embodiment of the present application;

[0020] Figure 3 A schematic structural diagram of an optional photovoltaic cell correction and visual alignment device provided in an embodiment of the present application;

[0021] Figure 4 A schematic structural diagram of an optional electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely for the purpose of explaining the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0023] The terms "first," "second," "third," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish between different objects, not to describe a particular order. Furthermore, the terms "including," "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements, but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to the process, method, product, or apparatus.

[0024] According to one aspect of the embodiment of the present application, a method for visual alignment of photovoltaic cells is provided. Figure 1 The present invention describes a method for visually correcting the alignment of photovoltaic cells provided in an embodiment of the present application.

[0025] Figure 1 This is a flow chart of an optional photovoltaic cell correction visual alignment method provided in an embodiment of the present application, such as Figure 1 As shown, the process of the method may include the following steps:

[0026] S102, collecting inspection images of silicon wafers in an inspection area and preprocessing the inspection images, wherein the preprocessing includes distortion correction, and the silicon wafers include a first silicon wafer and a second silicon wafer;

[0027] S104, determining the boundary positions of the first silicon wafer and the second silicon wafer respectively, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in the image coordinate system;

[0028] S106, determining the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and converting the first silicon wafer position coordinates and the second silicon wafer position coordinates into the correction table coordinate system through coordinate system conversion to obtain first correction position coordinates and second correction position coordinates, respectively;

[0029] S108, calculate the first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate the second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0030] The present application provides an optional photovoltaic cell visual alignment method that can be used to perform visual alignment and correction on silicon wafers in advance during photovoltaic production.

[0031] For example, Figure 2 A schematic diagram of an optional photovoltaic cell correction visual alignment method provided in an embodiment of the present application, such as Figure 2 As shown, when performing the deflection correction, a plurality of cameras arranged on the workstation can first collect the detection image of the silicon wafer (i.e., the crystal silicon wafer) in the detection area, and pre-process the detection image. The pre-processing here may include distortion correction, and the silicon wafer may include a first silicon wafer and a second silicon wafer arranged side by side and spaced apart. Then, the boundary positions of the first silicon wafer and the second silicon wafer can be determined respectively. It should be noted that the boundary position is the boundary position of the four edges of the first silicon wafer and the second silicon wafer in the image coordinate system of the detection image collected by the camera. Further, the position coordinates of the first silicon wafer and the second silicon wafer can be determined based on the boundary position, and the position coordinates of the first silicon wafer and the second silicon wafer can be converted to the correction table coordinate system through the coordinate system conversion. After obtaining the correction position coordinates, the correction value between the correction position coordinates and the target position coordinates is calculated, and the silicon wafer is visually aligned according to the correction value to complete the deflection correction. Among them, the target position is a predefined reference position. Usually, the reference position is basically located at the machining center. The target position is in the correction table coordinate system. Here, the correction value may include the X-axis coordinate value, Y-axis coordinate value, and angle value of the silicon wafer under the correction table. The correction table is two correction tables spaced apart and arranged side by side (i.e., a first correction table and a second correction table). Two silicon wafers are placed on each correction table and correction is performed according to the correction value (i.e., the correction table can be adjusted to make the silicon wafer reach the predetermined target position). Through the above steps S102 to S108, the detection images of the silicon wafers in the detection area are collected and preprocessed, wherein the preprocessing includes distortion correction, and the silicon wafers include a first silicon wafer and a second silicon wafer; the boundary positions of the first silicon wafer and the second silicon wafer are respectively determined, wherein the boundary positions are the boundary positions of the four sides of the first silicon wafer and the second silicon wafer in the image coordinate system; the position coordinates of the first silicon wafer and the second silicon wafer are determined based on the boundary positions, and the position coordinates of the first silicon wafer and the second silicon wafer are converted into the correction table coordinate system through coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates respectively; a first correction value between the first correction position coordinates and the first target position coordinates is calculated, and the first correction table is adjusted according to the first correction value until the first silicon wafer reaches the first target position; a second correction value between the second correction position coordinates and the second target position coordinates is calculated, and the second correction table is adjusted according to the second correction value until the second silicon wafer reaches the second target position.

[0032] In an exemplary embodiment, collecting a detection image of a silicon wafer in a detection area and preprocessing the detection image includes:

[0033] S11, lighting the silicon wafer with a planar array aperture light source disposed above the silicon wafer, and lighting the edge area of ​​the silicon wafer with a strip light source disposed below the silicon wafer;

[0034] S12, collecting a detection image of the silicon wafer in the detection area by using an industrial camera, wherein the detection image is a grayscale image;

[0035] S13, after obtaining the distortion parameters of the industrial camera by using checkerboard calibration, the detection image is subjected to distortion correction preprocessing according to the distortion parameters.

[0036] In this embodiment, before performing visual alignment for corrective action, an image of the silicon wafer in the inspection area can be captured and preprocessed. For example, an area array aperture light source can be used to illuminate the silicon wafer from top to bottom, while a strip light source can be used to illuminate the edge of the silicon wafer from bottom to top. An industrial camera can be used to capture a grayscale image of the silicon wafer, and the camera's distortion parameters can be calibrated using a checkerboard grid. The captured silicon wafer image can then be preprocessed for distortion correction.

[0037] Specifically, if Figure 2 As shown, a planar array open-hole light source can be used to illuminate a silicon wafer, for example, crystalline silicon wafer 1, from top to bottom, and a strip light source can be used to illuminate the edge area of ​​crystalline silicon wafer 1 from bottom to top. An industrial camera is used to capture a grayscale image of crystalline silicon wafer 1, and a checkerboard is used to calibrate the distortion parameters of the industrial cameras (cameras 1, 2, 3, 4, and 5), and the captured silicon wafer images are preprocessed for distortion correction.

[0038] Through this embodiment, the distortion correction preprocessing is performed on the collected silicon wafer image, which can improve the accuracy of subsequent visual alignment correction by the camera and reduce errors.

[0039] In an exemplary embodiment, determining the boundary positions of the first silicon wafer and the second silicon wafer includes:

[0040] S21, capturing boundary images of the first silicon wafer and the second silicon wafer, respectively obtaining first boundary images of four sides of the first silicon wafer and second boundary images of four sides of the second silicon wafer, wherein the boundary images are captured by a main camera and a plurality of auxiliary cameras;

[0041] S22 , matching the first boundary image and the second boundary image according to the established edge contour template, and determining the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer respectively using a linear caliper method.

[0042] In this embodiment, to determine the wafer edge position, wafer edge images captured by the corresponding cameras for each edge can be obtained. For example, wafer edge images of crystalline silicon wafer 1 captured by camera 1, wafer edge images of crystalline silicon wafer 1 captured by camera 2, wafer edge images of crystalline silicon wafer 1 captured by camera 3, and wafer edge images of crystalline silicon wafer 1 captured by camera 4 can be obtained. A template is created for the wafer edge contour, and the rough positions of the four wafer edges are then matched using the wafer contour template. A linear caliper method is then used to locate the wafer edge position within the detected edge area.

[0043] It should be noted that the acquisition of boundary images can be completed by multiple cameras, each camera corresponding to one edge of the silicon wafer, that is, the boundary image of one edge is acquired. Among the multiple cameras, one camera can be set as the main camera, and the image coordinate system of this camera is used as the reference coordinate system for subsequent coordinate transformations. For example, camera 3 is the main camera, and cameras 1, 2, and 4 are auxiliary cameras, respectively acquiring boundary images of silicon wafer 1; camera 3 is the main camera, and cameras 5, 2, and 4 are auxiliary cameras, respectively acquiring boundary images of silicon wafer 2. Figure 2 Camera 3 is set at the middle position of the two adjacent sides of the first silicon wafer and the second silicon wafer, camera 2 and camera 5 are set at the edge positions of the two adjacent sides between the first silicon wafer and the second silicon wafer, and camera 1 and camera 5 are respectively set at the middle position of the sides away from the first silicon wafer and the second silicon wafer.

[0044] In an exemplary embodiment, after determining the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer using a linear caliper method, the method further includes:

[0045] S31, mapping the boundary positions located by the boundary images captured by the multiple secondary cameras in the first boundary position and the second boundary position to the image coordinate system of the main camera through calibration;

[0046] S32, respectively calculating the intersection points of adjacent edges in the first silicon wafer and the second silicon wafer to obtain a first vertex position of the first silicon wafer and a second vertex position of the second silicon wafer, wherein the first vertex position includes four vertex positions of the first silicon wafer, and the second vertex position includes four vertex positions of the second silicon wafer;

[0047] S33, using weighted average to calculate the first vertex position and the second vertex position respectively, to obtain the first silicon wafer position coordinates and the second silicon wafer position coordinates.

[0048] In this embodiment, after determining the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer using a linear caliper method, the wafer coordinate values ​​can be determined based on the boundary positions. Optionally, the boundary positions of the first and second boundary positions, located by boundary images captured by multiple secondary cameras, can be mapped to the image coordinate system of the primary camera through calibration. The intersection points of adjacent edges of the first and second silicon wafers are then calculated to obtain the first vertex position of the first silicon wafer and the second vertex position of the second silicon wafer. Here, the first vertex position includes the four vertex positions of the first silicon wafer, and the second vertex position includes the four vertex positions of the second silicon wafer. For example, a weighted average can be used to calculate the first and second vertex positions to obtain the first and second silicon wafer position coordinates.

[0049] For example, cameras 1, 2, 3, and 4 can be calibrated using a calibration plate. With camera 3 as the primary camera, the edge positions located by cameras 1, 2, and 4 are mapped to the image coordinate system of camera 3 through calibration. The intersection of two adjacent edges is calculated to obtain the four vertex positions of silicon wafer 1 (i.e., the first vertex positions), and the weighted average is used to obtain the silicon wafer coordinate value (i.e., the first silicon wafer position coordinate). Cameras 2, 3, 4, and 5 can be calibrated using a calibration plate. With camera 3 as the primary camera, the edge positions located by cameras 2, 4, and 5 are mapped to the image coordinate system of camera 3 through calibration. The intersection of two adjacent edges is calculated to obtain the four vertex positions of silicon wafer 2 (i.e., the second vertex positions), and the weighted average is used to obtain the silicon wafer coordinate value (i.e., the second silicon wafer position coordinate).

[0050] In an exemplary embodiment, after mapping the boundary positions of the first boundary position and the second boundary position located by the boundary images captured by the multiple secondary cameras to the image coordinate system of the main camera through calibration, the method further includes:

[0051] S41, determining a first angle value of a boundary located by boundary images respectively captured by a main camera of a first silicon wafer and one of a plurality of auxiliary cameras, and determining a second angle value of a boundary located by boundary images respectively captured by a main camera of a second silicon wafer and one of a plurality of auxiliary cameras;

[0052] S42 , using angle weighted average to calculate a first angle value to determine first angle information of the first silicon wafer, and using angle weighted average to calculate a second angle value to determine second angle information of the second silicon wafer.

[0053] In this embodiment, a first angle value of a boundary located by boundary images captured by the primary camera and one of the multiple secondary cameras of the first silicon wafer is determined. Optionally, the angle values ​​of the edges located by cameras 1 and 3 can be used. Furthermore, the angle information of silicon wafer 1 can be obtained by weightedly averaging the angles of the edges located by cameras 1 and 3. It will be understood that the images captured by cameras 3 and 1 are two opposite edges of the first silicon wafer.

[0054] A second angle value of a boundary located by boundary images captured by the primary camera and one of the plurality of secondary cameras of the second silicon wafer is determined. Optionally, the angle values ​​of the edges located by cameras 5 and 3 can be used. The angle information of silicon wafer 2 can then be obtained by weightedly averaging the angles of the edges located by cameras 5 and 3. It will be appreciated that cameras 3 and 5 capture images of two opposing edges of the second silicon wafer.

[0055] In an exemplary embodiment, after determining first angle information of the first silicon wafer by calculating the first angle value using the angle weighted average and determining second angle information of the second silicon wafer by calculating the second angle value using the angle weighted average, the method further includes:

[0056] S51, in the image coordinate system of the main camera, converting the first silicon wafer position coordinates and first angle information of the first silicon wafer into the correction table coordinate system through N-point calibration to obtain first correction position coordinates and first correction angle;

[0057] S52 , in the image coordinate system of the main camera, convert the second silicon wafer position coordinates and second angle information of the second silicon wafer into the correction table coordinate system through N-point calibration to obtain second correction position coordinates and second correction angle.

[0058] In this embodiment, exemplarily, camera 3 is used as the main camera to perform N-point calibration on the silicon wafer 1 station. The position and angle of the silicon wafer 1 in the image coordinate system of camera 3 are converted to the correction table coordinate system through N-point calibration to obtain the first correction position coordinates and the first correction angle.

[0059] With camera 3 as the main camera, N-point calibration is performed on the silicon wafer 2 station. The position and angle of silicon wafer 2 in the camera 3 image coordinate system are converted to the correction table coordinate system through N-point calibration to obtain the second correction position coordinates and the second correction angle.

[0060] In an exemplary embodiment, the method further includes:

[0061] S61, obtaining first target position coordinates and a first target angle of a first silicon wafer at a first target position preset on the deflection correction table, and obtaining second target position coordinates and a second target angle of a second silicon wafer at a second target position preset on the deflection correction table, wherein the first target position coordinates include a first X-axis coordinate and a first Y-axis coordinate, and the second target position coordinates include a second X-axis coordinate and a second Y-axis coordinate;

[0062] S62, performing visual alignment calculation on the first silicon wafer, determining a first correction value between the first correction position coordinates and the first target position coordinates, determining a first correction angle value between the first correction angle and the first target angle, and adjusting the first correction stage according to the first correction value and the first correction angle value until the first silicon wafer reaches the first target position;

[0063] S63, perform visual alignment calculation on the second silicon wafer, determine the second correction value between the second correction position coordinates and the second target position coordinates, determine the second correction angle value between the second correction angle and the second target angle, and adjust the second correction table according to the second correction value and the second correction angle value until the second silicon wafer reaches the second target position.

[0064] In this embodiment, when performing visual alignment correction, it is necessary to determine the correction values ​​of the X-axis and Y-axis under the correction table, as well as the correction angle value. Specifically, the first target position coordinates and the first target angle of the first silicon wafer at the first target position preset on the correction table can be obtained, and the second target position coordinates and the second target angle of the second silicon wafer at the second target position preset on the correction table can be obtained. Here, the first target position coordinates include the X-axis coordinate (first X-axis coordinate) and the Y-axis coordinate (first Y-axis coordinate) of the first silicon wafer at the preset first target position, and the second target position coordinates include the X-axis coordinate (second X-axis coordinate) and the Y-axis coordinate (second Y-axis coordinate) of the second silicon wafer at the preset second target position.

[0065] Optionally, a visual alignment calculation can be performed on the first silicon wafer to determine a first correction value between the first correction position coordinates and the first target position coordinates, and a first correction angle value between the first correction angle and the first target angle. Furthermore, the first correction platform can be adjusted to the first silicon wafer according to the first correction value and the first correction angle value to reach a predetermined reference position (i.e., the first target position). Similarly, a visual alignment calculation can be performed on the second silicon wafer to determine a second correction value between the second correction position coordinates and the second target position coordinates, and a second correction angle value between the second correction angle and the second target angle. Furthermore, the second correction platform can be adjusted to the second silicon wafer according to the second correction value and the second correction angle value to reach a predetermined reference position (i.e., the second target position).

[0066] Specifically, the target position X′, Y′, and angle θ′ of the correction table can be set in advance. Silicon wafer 1 and silicon wafer 2 can be visually aligned with the target position to calculate the advance correction values ​​ΔX, ΔY, and Δθ. The calculation method is as follows:

[0067] ΔX=X′-Ysin(Δθ)-Xcos(Δθ)

[0068] ΔY=Y′-Ycos(Δθ)+Xsin(Δθ)

[0069] Δθ=θ′-θ

[0070] Where: X is the X-axis coordinate of silicon wafer 1 or silicon wafer 2 under the correction table, Y is the Y-axis coordinate of silicon wafer 1 or silicon wafer 2 under the correction table, and θ is the angle value of silicon wafer 1 or silicon wafer 2 under the correction table.

[0071] After the deviation correction values ​​are calculated, visual alignment correction can be performed on silicon wafer 1 and silicon wafer 2 based on the deviation correction values ​​ΔX, ΔY, and Δθ.

[0072] Through this embodiment, the silicon wafer can be visually aligned according to the correction value to complete the correction, which solves the problems of low correction efficiency and low accuracy, and achieves the purpose of improving production speed, high precision and full automation.

[0073] The present invention's photovoltaic cell alignment method uses visual alignment to simultaneously determine the position and angle of two silicon wafers, as well as their relative position and angle. This effectively "joins" the two wafers into a single wafer, improving machining accuracy.

[0074] According to another aspect of the embodiments of the present application, a correction visual alignment device for implementing the above-mentioned correction visual alignment method for photovoltaic cells is also provided. Figure 3 FIG. 1 is a schematic structural diagram of an optional photovoltaic cell correction visual alignment device according to an embodiment of the present application, such as Figure 3 As shown, the device may include:

[0075] An acquisition unit 302 is configured to acquire an inspection image of a silicon wafer in an inspection area and preprocess the inspection image, wherein the preprocessing includes distortion correction, and the silicon wafer includes a first silicon wafer and a second silicon wafer;

[0076] a first determining unit 304 configured to respectively determine boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in an image coordinate system;

[0077] A first conversion unit 306 is configured to determine the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and convert the first silicon wafer position coordinates and the second silicon wafer position coordinates into a correction table coordinate system through coordinate system conversion to obtain first correction position coordinates and second correction position coordinates, respectively;

[0078] The first correction unit 308 is used to calculate a first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate a second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0079] It should be noted that the acquisition unit 302 in this embodiment can be used to execute the above-mentioned step S102, the first determination unit 304 in this embodiment can be used to execute the above-mentioned step S104, the first conversion unit 306 in this embodiment can be used to execute the above-mentioned step S106, and the first correction unit 308 in this embodiment can be used to execute the above-mentioned step S108.

[0080] Through the above module, the detection image of the silicon wafer in the detection area is collected and preprocessed, wherein the preprocessing includes distortion correction, and the silicon wafer includes a first silicon wafer and a second silicon wafer; the boundary position of the first silicon wafer and the second silicon wafer is determined respectively, wherein the boundary position is the boundary position of the four sides of the first silicon wafer and the second silicon wafer in the image coordinate system; the position coordinates of the first silicon wafer and the second silicon wafer are determined based on the boundary position, and the position coordinates of the first silicon wafer and the second silicon wafer are converted into the correction table coordinate system through the coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates respectively; the first correction value between the first correction position coordinates and the first target position coordinates is calculated, and the first correction table is adjusted according to the first correction value until the first silicon wafer reaches the first target position, the second correction value between the second correction position coordinates and the second target position coordinates is calculated, and the second correction table is adjusted according to the second correction value until the second silicon wafer reaches the second target position, thereby solving the problems of low correction efficiency and low precision, and achieving the purpose of improving production speed, high precision and full automation.

[0081] In an exemplary embodiment, the acquisition unit includes:

[0082] a lighting module, configured to illuminate the silicon wafer through a planar array aperture light source disposed above the silicon wafer, and to illuminate an edge region of the silicon wafer through a strip light source disposed below the silicon wafer;

[0083] a first acquisition module, configured to acquire the detection image of the silicon wafer in the detection area by using an industrial camera, wherein the detection image is a grayscale image;

[0084] The preprocessing module is used to obtain the distortion parameters of the industrial camera by using checkerboard calibration, and then perform distortion correction preprocessing on the detection image according to the distortion parameters.

[0085] In an exemplary embodiment, the determining unit includes:

[0086] a second acquisition module, configured to acquire boundary images of the first silicon wafer and the second silicon wafer, and obtain first boundary images of four sides of the first silicon wafer and second boundary images of four sides of the second silicon wafer, respectively, wherein the boundary images are acquired by a main camera and a plurality of auxiliary cameras;

[0087] A matching module is used to match the first boundary image and the second boundary image according to the established edge contour template, and use a linear caliper method to respectively determine the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer.

[0088] In an exemplary embodiment, the apparatus further comprises:

[0089] a calibration mapping unit, configured to map, by calibration, the first boundary position and the second boundary position located by the boundary images captured by the multiple secondary cameras into the image coordinate system of the primary camera;

[0090] a first calculation unit, configured to calculate intersection points of adjacent edges of the first silicon wafer and the second silicon wafer, respectively, to obtain a first vertex position of the first silicon wafer and a second vertex position of the second silicon wafer, wherein the first vertex position includes four vertex positions of the first silicon wafer, and the second vertex position includes four vertex positions of the second silicon wafer;

[0091] The second calculation unit is used to respectively calculate the first vertex position and the second vertex position by using weighted average to obtain the first silicon wafer position coordinates and the second silicon wafer position coordinates.

[0092] In an exemplary embodiment, the apparatus further comprises:

[0093] a second determining unit, configured to determine a first angle value of a boundary located by the boundary images respectively captured by the main camera of the first silicon wafer and one of the plurality of auxiliary cameras, and to determine a second angle value of a boundary located by the boundary images respectively captured by the main camera of the second silicon wafer and one of the plurality of auxiliary cameras;

[0094] The third determining unit is configured to calculate the first angle value by using angle weighted average to determine the first angle information of the first silicon wafer, and to calculate the second angle value by using angle weighted average to determine the second angle information of the second silicon wafer.

[0095] In an exemplary embodiment, the apparatus further comprises:

[0096] a second conversion unit, configured to convert the first silicon wafer position coordinates and first angle information of the first silicon wafer into the correction table coordinate system through N-point calibration in the image coordinate system of the main camera to obtain first correction position coordinates and a first correction angle;

[0097] The third conversion unit is used to convert the second silicon wafer position coordinates and second angle information of the second silicon wafer into the correction table coordinate system through N-point calibration in the image coordinate system of the main camera to obtain second correction position coordinates and second correction angle.

[0098] In an exemplary embodiment, the apparatus further comprises:

[0099] an acquiring unit, configured to acquire the first target position coordinates and a first target angle of a first silicon wafer at a first target position preset on a deflection correction table, and acquire the second target position coordinates and a second target angle of a second silicon wafer at a second target position preset on the deflection correction table, wherein the first target position coordinates include a first X-axis coordinate and a first Y-axis coordinate, and the second target position coordinates include a second X-axis coordinate and a second Y-axis coordinate;

[0100] a second correction unit, configured to perform visual alignment calculation on the first silicon wafer, determine a first correction value between the first correction position coordinates and the first target position coordinates, determine a first correction angle value between the first correction angle and the first target angle, and adjust the first correction stage according to the first correction value and the first correction angle value until the first silicon wafer reaches the first target position;

[0101] The third correction unit is used to perform visual alignment calculation on the second silicon wafer, determine the second correction value between the second correction position coordinates and the second target position coordinates, determine the second correction angle value between the second correction angle and the second target angle, and adjust the second correction table according to the second correction value and the second correction angle value until the second silicon wafer reaches the second target position.

[0102] It should be noted here that the examples and scenarios implemented by the above modules and corresponding steps are the same, but are not limited to the contents disclosed in the above embodiments. It should be noted that the above modules as part of the device can run in a hardware environment, can be implemented by software, and can also be implemented by hardware, where the hardware environment includes a network environment.

[0103] According to another aspect of the embodiments of the present application, a storage medium is further provided. Optionally, in this embodiment, the storage medium can be used to execute the program code of any of the photovoltaic cell deviation correction and visual alignment methods described in the embodiments of the present application.

[0104] Optionally, in this embodiment, the storage medium is configured to store program codes for executing the following steps:

[0105] S1, collecting detection images of silicon wafers in a detection area, and preprocessing the detection images, wherein the preprocessing includes distortion correction, and the silicon wafers include a first silicon wafer and a second silicon wafer.

[0106] S2, respectively determining boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in the image coordinate system.

[0107] S3, determining the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and converting the first silicon wafer position coordinates and the second silicon wafer position coordinates into the correction table coordinate system through coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates respectively.

[0108] S4, calculate the first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate the second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0109] Optionally, the specific examples in this embodiment may refer to the examples described in the above embodiments, which will not be described in detail in this embodiment.

[0110] Among them, computer-readable storage media may include, but are not limited to, any type of disk, including floppy disks, optical disks, DVDs, CD-ROMs, microdrives and magneto-optical disks, ROMs, RAMs, EPROMs, EEPROMs, DRAMs, VRAMs, flash memory devices, magnetic or optical cards, nanosystems (including molecular memory ICs), or any type of medium or device suitable for storing instructions and / or data.

[0111] According to another aspect of the embodiments of the present application, an electronic device for implementing the above-mentioned photovoltaic cell correction visual alignment method is also provided. The electronic device can be a server, a terminal, or a combination thereof.

[0112] Figure 4 is a schematic structural diagram of an optional electronic device according to an embodiment of the present application, such as Figure 4 As shown, it includes a processor 402, a communication interface 404, a memory 406 and a communication bus 408, wherein the processor 402, the communication interface 404, and the memory 406 communicate with each other via the communication bus 408, wherein,

[0113] Memory 406, for storing computer programs;

[0114] The processor 402 is configured to execute the computer program stored in the memory 406 to implement the following steps:

[0115] S1, collecting detection images of silicon wafers in a detection area, and preprocessing the detection images, wherein the preprocessing includes distortion correction, and the silicon wafers include a first silicon wafer and a second silicon wafer.

[0116] S2, respectively determining boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in the image coordinate system.

[0117] S3, determining the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and converting the first silicon wafer position coordinates and the second silicon wafer position coordinates into the correction table coordinate system through coordinate system conversion to obtain the first correction position coordinates and the second correction position coordinates respectively.

[0118] S4, calculate the first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate the second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

[0119] Optionally, the communication bus may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The communication bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 4 The communication interface is used for communication between the electronic device and other devices.

[0120] The memory may include RAM, or may include non-volatile memory, such as at least one disk memory. Alternatively, the memory may also be at least one storage device located away from the aforementioned processor.

[0121] As an example, the memory 406 may include, but is not limited to, the acquisition unit 302, the first determination unit 304, the first conversion unit 306, and the first correction unit 308 of the photovoltaic cell visual alignment device. Furthermore, the memory 406 may also include, but is not limited to, other module units of the photovoltaic cell visual alignment device, which are not further described in this example.

[0122] The above-mentioned processor can be a general-purpose processor, including but not limited to: CPU (Central Processing Unit), NP (Network Processor), etc.; it can also be DSP (Digital Signal Processing), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0123] Optionally, the specific examples in this embodiment may refer to the examples described in the above embodiments, and this embodiment will not be described in detail here.

[0124] It should be noted that for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that this application is not limited by the order of the actions described, because according to this application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by this application.

[0125] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0126] In the several embodiments provided in this application, it should be understood that the disclosed devices can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some service interface, and the indirect coupling or communication connection of the device or unit can be electrical or other forms.

[0127] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0128] In addition, the functional units in the various embodiments of the present application may be integrated into a single processing unit, or each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0129] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a memory, including a number of instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned memory includes: various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0130] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable memory, which may include: a flash drive, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0131] The above is only an exemplary embodiment of the present disclosure and cannot be used to limit the scope of the present disclosure. That is, any equivalent changes and modifications made according to the teachings of the present disclosure are still within the scope of the present disclosure. After considering the specification and practicing the disclosure herein, those skilled in the art will easily think of the implementation scheme of the present disclosure. This application is intended to cover any variation, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary technical means in the art that are not recorded in the present disclosure. The description and examples are to be regarded as exemplary only, and the scope and spirit of the present disclosure are defined by the claims.

[0132] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0133] It will be easily understood by those skilled in the art that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A photovoltaic cell correction visual alignment method, characterized in that: include: Collecting a detection image of a silicon wafer in a detection area, and preprocessing the detection image, wherein the preprocessing includes distortion correction, and the silicon wafer includes a first silicon wafer and a second silicon wafer; Determining boundary positions of the first silicon wafer and the second silicon wafer respectively, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in an image coordinate system; Determining the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and converting the first silicon wafer position coordinates and the second silicon wafer position coordinates into the correction table coordinate system through coordinate system conversion to obtain first correction position coordinates and second correction position coordinates respectively; Calculate a first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate a second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

2. The photovoltaic cell correction visual alignment method according to claim 1, characterized in that: The collecting the detection image of the silicon wafer in the detection area and preprocessing the detection image includes: The silicon wafer is illuminated by a planar array aperture light source disposed above the silicon wafer, and an edge region of the silicon wafer is illuminated by a strip light source disposed below the silicon wafer; collecting the detection image of the silicon wafer in the detection area by an industrial camera, wherein the detection image is a grayscale image; After obtaining the distortion parameters of the industrial camera by using checkerboard calibration, the detection image is subjected to distortion correction preprocessing according to the distortion parameters.

3. The photovoltaic cell correction visual alignment method according to claim 1, wherein: The determining the boundary positions of the first silicon wafer and the second silicon wafer respectively includes: Capturing boundary images of the first silicon wafer and the second silicon wafer to obtain first boundary images of four sides of the first silicon wafer and second boundary images of four sides of the second silicon wafer, respectively, wherein the boundary images are acquired by a main camera and a plurality of auxiliary cameras; The first boundary image and the second boundary image are matched according to the established edge contour template, and a first boundary position of the first silicon wafer and a second boundary position of the second silicon wafer are respectively determined using a linear caliper method.

4. The photovoltaic cell correction visual alignment method according to claim 3, characterized in that: After determining the first boundary position of the first silicon wafer and the second boundary position of the second silicon wafer respectively using the linear caliper method, the method further includes: Mapping the boundary positions located by the boundary images captured by the multiple secondary cameras in the first boundary position and the second boundary position to the image coordinate system of the main camera through calibration; Calculating the intersection points of adjacent edges of the first silicon wafer and the second silicon wafer respectively to obtain a first vertex position of the first silicon wafer and a second vertex position of the second silicon wafer, wherein the first vertex position includes the four vertex positions of the first silicon wafer, and the second vertex position includes the four vertex positions of the second silicon wafer; The first vertex position and the second vertex position are calculated respectively by weighted averaging to obtain the first silicon wafer position coordinates and the second silicon wafer position coordinates.

5. The photovoltaic cell correction visual alignment method according to claim 4, characterized in that: After mapping the boundary positions located in the boundary images captured by the multiple secondary cameras in the first boundary position and the second boundary position to the image coordinate system of the main camera through calibration, the method further includes: determining a first angle value of a boundary located by the boundary images respectively captured by the main camera of the first silicon wafer and one of the plurality of secondary cameras, and determining a second angle value of a boundary located by the boundary images respectively captured by the main camera of the second silicon wafer and one of the plurality of secondary cameras; The first angle value is calculated by angle weighted average to determine the first angle information of the first silicon wafer, and the second angle value is calculated by angle weighted average to determine the second angle information of the second silicon wafer.

6. The photovoltaic cell correction visual alignment method according to claim 5, characterized in that: After calculating the first angle value by using angle weighted average to determine the first angle information of the first silicon wafer and calculating the second angle value by using angle weighted average to determine the second angle information of the second silicon wafer, the method further includes: In the image coordinate system of the main camera, convert the first silicon wafer position coordinates and first angle information of the first silicon wafer into the correction table coordinate system through N-point calibration to obtain first correction position coordinates and first correction angle; In the image coordinate system of the main camera, the second silicon wafer position coordinates and second angle information of the second silicon wafer are converted to the correction table coordinate system through N-point calibration to obtain second correction position coordinates and second correction angle.

7. The photovoltaic cell correction visual alignment method according to any one of claims 1 to 6, characterized in that: The method further comprises: Obtaining the first target position coordinates and a first target angle of the first silicon wafer at the first target position preset on the deflection correction table, and obtaining the second target position coordinates and a second target angle of the second silicon wafer at the second target position preset on the deflection correction table, wherein the first target position coordinates include a first X-axis coordinate and a first Y-axis coordinate, and the second target position coordinates include a second X-axis coordinate and a second Y-axis coordinate; performing visual alignment calculation on the first silicon wafer, determining a first correction value between a first correction position coordinate and the first target position coordinate, determining a first correction angle value between a first correction angle and the first target angle, and adjusting a first correction stage according to the first correction value and the first correction angle value until the first silicon wafer reaches the first target position; Perform visual alignment calculation on the second silicon wafer, determine the second correction value between the second correction position coordinates and the second target position coordinates, determine the second correction angle value between the second correction angle and the second target angle, and adjust the second correction table according to the second correction value and the second correction angle value until the second silicon wafer reaches the second target position.

8. A photovoltaic cell correction visual alignment device, characterized in that: include: an acquisition unit, configured to acquire an inspection image of the silicon wafer in the inspection area and preprocess the inspection image, wherein the preprocessing includes distortion correction, and the silicon wafer includes a first silicon wafer and a second silicon wafer; a first determining unit, configured to respectively determine boundary positions of the first silicon wafer and the second silicon wafer, wherein the boundary positions are boundary positions of four sides of the first silicon wafer and the second silicon wafer in an image coordinate system; a first conversion unit, configured to determine the first silicon wafer position coordinates and the second silicon wafer position coordinates based on the boundary position, and convert the first silicon wafer position coordinates and the second silicon wafer position coordinates into a correction table coordinate system through coordinate system conversion to obtain first correction position coordinates and second correction position coordinates, respectively; The first correction unit is used to calculate a first correction value between the first correction position coordinates and the first target position coordinates, adjust the first correction table according to the first correction value until the first silicon wafer reaches the first target position, calculate a second correction value between the second correction position coordinates and the second target position coordinates, and adjust the second correction table according to the second correction value until the second silicon wafer reaches the second target position.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored program, wherein the program executes the method according to any one of claims 1 to 7 when executed.

10. An electronic device comprising a memory and a processor, characterized in that: A computer program is stored in the memory, and the processor is configured to execute the method according to any one of claims 1 to 7 through the computer program.

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