Wafer cleaning fluid supply device

Abstract

The invention discloses a wafer cleaning fluid supply device, which comprises a gas supply unit for providing carbon dioxide gas; the gas purification unit comprises a gas purification device, a first pipeline and a second pipeline; the gas purification device is provided with an inlet end and an outlet end; the first pipeline is communicated with the inlet end; the second pipeline is communicated with the outlet end; the gas treatment unit comprises a gas treatment part and a third pipeline; the gas treatment part is communicated with the second pipeline and is used for treating the carbon dioxide gas flowing through the second pipeline and entering the gas treatment part so as to obtain carbon dioxide fluid in a supercritical state; one end of the third pipeline is arranged on the gas processing part, and the other end of the third pipeline is connected with a drying chamber of the wafer processing device, so that the carbon dioxide fluid in the supercritical state flows through the third pipeline and enters the drying chamber; and the circulating unit is used for circulating part of the carbon dioxide fluid to the gas treatment unit. According to the invention, the situation of wafer pattern lodging in the wafer cleaning process can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer cleaning fluid supply device. Background Art

[0002] During the wafer manufacturing process, a wide variety of debris accumulates on the wafer surface, ranging from tiny particles tens of nanometers in size to dust particles hundreds of micrometers in size, as well as surface residues left over from previous processes. These particles can block light during photolithography, causing defects in the integrated circuit structure.

[0003] In existing technologies, especially in traditional wet cleaning processes, chemical liquids are used to clean wafers to remove particles, metal contaminants, and organic pollutants. During the drying process, due to the high surface tension of the liquid, the force on the pattern during the liquid drying process is unbalanced, causing wafer patterns with large aspect ratios to collapse, and residual cleaning liquid to remain on the wafer surface.

[0004] Therefore, it is necessary to provide a new wafer cleaning fluid supply device to solve the above problems existing in the prior art. Summary of the Invention

[0005] The technical problem to be solved by the present application is to provide a wafer cleaning fluid supply device that can reduce the prostration of wafer patterns.

[0006] To solve the above technical problems, according to an embodiment of the present application, a wafer cleaning fluid supply device is provided, comprising: a gas supply unit, configured to provide carbon dioxide gas; A gas purification unit comprising a gas purification device, a first pipeline, and a second pipeline; the gas purification device having an inlet end and an outlet end; the first pipeline is connected to the inlet end so that the carbon dioxide gas provided by the gas supply unit enters the gas purification unit via the first pipeline; the second pipeline is connected to the outlet end; a gas processing unit comprising a gas processing portion and a third pipeline; the gas processing portion being in communication with the second pipeline and configured to process the carbon dioxide gas flowing through the second pipeline and entering the gas processing portion to obtain a supercritical carbon dioxide fluid; one end of the third pipeline being disposed in the gas processing portion and the other end being configured to connect to a drying chamber of a wafer processing apparatus, so that the supercritical carbon dioxide fluid flows through the third pipeline and enters the drying chamber; A circulation unit, one end of which is in communication with the third pipeline and the other end of which is in communication with the second pipeline, circulates part of the carbon dioxide fluid to the gas processing unit to stabilize the carbon dioxide fluid.

[0007] By adopting the above technical solution, during the wafer drying process, the gas supply unit provides carbon dioxide gas, which is converted into high-purity carbon dioxide gas after passing through the gas purification device. The high-purity carbon dioxide gas is processed by the gas treatment unit and becomes a supercritical carbon dioxide fluid. The supercritical carbon dioxide fluid contacts the wafer to dry the wafer. At the same time, since the surface tension of the supercritical fluid is close to zero, it has both the high diffusivity of gas and the strong solubility of liquid, and can penetrate into grooves and micropores to effectively remove residual particles and organic pollutants. Therefore, the supercritical carbon dioxide fluid can avoid the liquid residue problem caused by traditional wet cleaning.

[0008] According to an embodiment of the present application, the gas processing part includes: a condensing portion, communicating with the second pipeline, to liquefy the carbon dioxide gas into carbon dioxide liquid; a pressurizing device having a liquid inlet and a liquid outlet, wherein the liquid inlet is connected to the condensing portion to pressurize the carbon dioxide liquid flowing through the liquid inlet and entering the pressurizing device; and the third pipeline is connected to the liquid outlet; A heating device is provided in the third pipeline to heat the carbon dioxide liquid flowing through the third pipeline into the carbon dioxide fluid in a supercritical state.

[0009] According to an embodiment of the present application, a circulation unit is further included; the circulation unit includes: a fourth pipeline, one end of which is disposed on the third pipeline and communicated with the third pipeline; a circulation device, provided at the other end of the fourth pipeline, for regulating the pressure of the fourth pipeline; a fifth pipeline, one end of which is provided in the circulation device and the other end of which is connected to the second pipeline; Part of the carbon dioxide liquid flows through the fourth pipeline and the circulation device to become the carbon dioxide gas, and the carbon dioxide gas flows through the fifth pipeline and enters the second pipeline, and circulates to the condensation part.

[0010] According to an embodiment of the present application, the circulation device includes: a heating element, provided in the fourth pipeline, to heat the carbon dioxide liquid flowing through the fourth pipeline into the carbon dioxide fluid in a supercritical state; a first pressure regulating member, wherein one end of the first pressure regulating member is connected to the other end of the fourth pipeline, and the other end of the first pressure regulating member is connected to the fifth pipeline; for regulating the pressure of the carbon dioxide fluid in a supercritical state to convert the carbon dioxide fluid in a supercritical state into the carbon dioxide gas.

[0011] According to an embodiment of the present application, the fourth pipeline is provided between the pressurizing device and the heating device.

[0012] According to an embodiment of the present application, the condensation part includes: a condenser, one end of which is in communication with the second pipeline, so as to cool the carbon dioxide gas flowing through the second pipeline; The water tank has a liquid inlet pipeline and a liquid outlet pipeline, the liquid inlet pipeline is connected to the other end of the condenser, and the liquid outlet pipeline is connected to the liquid inlet end, so that the carbon dioxide liquid flows through the liquid inlet pipeline, the water tank and the liquid outlet pipeline in sequence and then enters the pressurizing device; the second pipeline and the liquid inlet pipeline are both provided with temperature and pressure detection devices to detect the temperature and pressure at both ends of the condenser.

[0013] According to an embodiment of the present application, the gas processing part also includes a second pressure regulating component, which is arranged in the third pipeline and placed between the heating device and the drying chamber to regulate the pressure of the supercritical carbon dioxide fluid flowing through the third pipeline into the drying chamber.

[0014] According to an embodiment of the present application, the circulation unit further includes a throttling member, which is provided in the fifth pipeline to adjust the flow rate of the liquid flowing through the fifth pipeline.

[0015] According to an embodiment of the present application, the third pipeline and the fourth pipeline are both provided with temperature and pressure detection devices to detect the temperature and pressure of the carbon dioxide fluid.

[0016] According to an embodiment of the present application, the gas purification unit further includes a filtering device, which is provided in the second pipeline to filter the carbon dioxide gas flowing through the second pipeline. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic structural diagram of a wafer cleaning fluid supply device according to an embodiment of the present invention; Figure 2 This is a structural schematic diagram of a gas processing unit according to an embodiment of the present invention.

[0018] Reference numerals: 100, gas supply unit; 210, gas purification device; 220, filtering device; 230, first pipeline; 240, second pipeline; 300, gas processing unit; 311, pressurizing device; 312, liquid inlet; 313, liquid outlet; 314, heating device; 315, condenser; 316, water tank; 317, liquid inlet pipeline; 318, liquid outlet pipeline; 319, second pressure regulating component; 320, third pipeline; 400, drying chamber; 510, fourth pipeline; 520, circulation device; 521, first pressure regulating component; 522, heating component; 530, fifth pipeline; 600, temperature and pressure detection device; 710, control valve; 720, pressure reducing valve; 730, pressure gauge; 740, gas detection part. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0020] The following is combined with Figure 1-2 , the specific implementation methods of the present invention are further described in detail.

[0021] An embodiment of the present invention provides a wafer cleaning fluid supply device, which is used in the wafer drying process and is used to provide a stable supercritical fluid to improve and avoid the liquid residue problem caused by traditional wet cleaning. Specifically, the wafer cleaning fluid supply device includes: The gas supply unit 100 is used to provide carbon dioxide gas; The gas purification unit includes a gas purification device 210, a first pipeline 230, and a second pipeline 240. The gas purification device 210 has an inlet end and an outlet end. The first pipeline 230 is connected to the inlet end so that the carbon dioxide gas provided by the gas supply unit 100 enters the gas purification unit through the first pipeline 230. The second pipeline 240 is connected to the outlet end. The gas processing unit 300 includes a gas processing portion and a third pipeline 320. The gas processing portion is connected to the second pipeline 240 and is used to process the carbon dioxide gas flowing through the second pipeline 240 and entering the gas processing portion to obtain a supercritical carbon dioxide fluid. One end of the third pipeline 320 is located in the gas processing portion, and the other end is connected to the drying chamber 400 of the wafer processing apparatus, so that the supercritical carbon dioxide fluid flows through the third pipeline 320 and enters the drying chamber 400. The circulation unit is connected to the third pipeline 320 at one end and to the second pipeline 240 at the other end, so as to circulate part of the carbon dioxide fluid to the gas processing unit 300 to stabilize the carbon dioxide fluid.

[0022] In some embodiments, the wafer cleaning fluid supply device includes a gas supply unit 100, a gas purification unit, and a gas processing unit 300. The gas supply unit 100 is used to provide carbon dioxide gas; the gas purification unit is used to purify the carbon dioxide gas provided by the gas supply unit 100 and output the purified carbon dioxide gas; the gas processing unit 300 is used to process the purified carbon dioxide gas to convert the carbon dioxide gas into a supercritical carbon dioxide fluid. At the same time, the gas processing unit 300 transports the supercritical carbon dioxide fluid to the drying chamber 400 of the wafer processing device to dry the wafer. In the traditional wet cleaning process, chemical liquids are used to clean wafers to remove particles, metal contaminants, organic contaminants, etc. During the drying process, due to the large surface tension of the liquid, the pattern on the wafer is subjected to unbalanced force during the liquid drying process, which can cause wafer patterns with a large depth-to-width ratio to fall over. In the present application, since the surface tension of supercritical fluid approaches zero, and it has both the high diffusivity of gas and the strong solubility of liquid, it can penetrate deep into grooves and micropores to effectively remove residual particles and organic pollutants. Therefore, a gas supply unit 100, a gas purification unit and a gas treatment unit 300 are used in combination to provide a stable supercritical carbon dioxide fluid for cleaning, thereby avoiding the problem of liquid residue caused by traditional wet cleaning.

[0023] In some specific embodiments, the gas purification unit includes a gas purification device 210, a first pipeline 230, and a second pipeline 240. The first pipeline 230 and the second pipeline 240 are respectively provided at both ends of the gas purification device 210 and are both connected to the gas purification device 210. Specifically, the gas purification device 210 has an inlet end and an outlet end. One end of the first pipeline 230 is connected to the inlet end, and the other end is connected to the gas supply unit 100. The second pipeline 240 is connected to the outlet end, so that the carbon dioxide gas provided by the gas supply unit 100 can enter the gas purification device 210 through the first pipeline 230, be purified in the gas purification device 210, and then be discharged through the second pipeline 240 and enter the gas processing unit 300.

[0024] In some more specific embodiments, the gas purification device 210 is a purifier.

[0025] In some embodiments, the gas processing unit 300 includes a gas processing part and a third pipeline 320, wherein the gas processing part is connected to the second pipeline 240, so that the carbon dioxide gas purified by the gas purification device 210 can enter the gas processing part through the second pipeline 240 for processing; at the same time, one end of the third pipeline 320 is connected to the gas processing part, and the other end is used to connect to the drying chamber 400 of the wafer processing device; the purified carbon dioxide gas is processed in the gas processing part and becomes a supercritical carbon dioxide fluid, and at the same time, the supercritical carbon dioxide fluid enters the drying chamber 400 through the third pipeline 320 to facilitate the processing of the wafer.

[0026] The gas processing section includes: a condensing portion, communicating with the second pipeline 240, to liquefy the carbon dioxide gas into carbon dioxide liquid; The pressurizing device 311 has a liquid inlet 312 and a liquid outlet 313. The liquid inlet 312 is connected to the condensing part to pressurize the carbon dioxide liquid flowing through the liquid inlet 312 and entering the pressurizing device 311. The third pipeline 320 is connected to the liquid outlet 313. The heating device 314 is provided in the third pipeline 320 to heat the carbon dioxide liquid flowing through the third pipeline 320 into a supercritical carbon dioxide fluid.

[0027] In some embodiments, in order to process the purified carbon dioxide in the gas processing section and convert the purified carbon dioxide gas into a supercritical carbon dioxide fluid, a gas processing section is provided that includes a condensing section, a pressurizing device 311, and a heating device 314. The condensing section and the pressurizing device 311 are connected via a pipeline. The condensing section is also connected to the second pipeline 240 for cooling the carbon dioxide gas. Specifically, the condensing section is connected to the second pipeline 240, allowing the purified carbon dioxide gas to enter the condensing section through the second pipeline 240, thereby being cooled in the condensing section and converting the carbon dioxide gas into a carbon dioxide liquid.

[0028] In some specific embodiments, the pressurizing device 311 has a liquid inlet 312 and a liquid outlet 313. The liquid inlet 312 is connected to the condensing portion via a pipe, allowing the cooled carbon dioxide liquid in the condensing portion to flow sequentially through the pipe and the liquid inlet 312 into the pressurizing device 311 for pressurization. A third pipe 320 is connected to the liquid outlet 313, allowing the carbon dioxide liquid pressurized in the pressurizing device 311 to flow out through the third pipe 320.

[0029] In some more specific embodiments, the pressurizing device 311 is a pressurizing pump.

[0030] In some more specific embodiments, the pressurizing device 311 is capable of increasing the pressure of the carbon dioxide liquid to 19 MPa.

[0031] In some specific embodiments, a heating device 314 is further provided on the third pipe 320. The heating device 314 is disposed around the third pipe 320 and is configured to heat the carbon dioxide liquid flowing through the third pipe 320, converting it into a supercritical carbon dioxide fluid. Specifically, the heating device 314 can be a resistance wire or other device capable of heating, without limitation herein, as long as it can heat the carbon dioxide liquid in the third pipe 320. Heating by the heating device 314 converts the carbon dioxide liquid in the third pipe 320 into a supercritical carbon dioxide fluid, which then enters the drying chamber 400 for wafer processing.

[0032] The condensation section includes: a condenser 315 , one end of which is in communication with the second pipeline 240 to cool the carbon dioxide gas flowing through the second pipeline 240 ; The water tank 316 has a liquid inlet line 317 and a liquid outlet line 318. The liquid inlet line 317 is connected to the other end of the condenser 315, and the liquid outlet line 318 is connected to the liquid inlet end 312, so that the carbon dioxide liquid flows through the liquid inlet line 317, the water tank 316, and the liquid outlet line 318 in sequence before entering the pressurizing device 311. The second pipeline 240 and the liquid inlet line 317 are both provided with a temperature and pressure detection device 600 to detect the temperature and pressure at both ends of the condenser 315.

[0033] In some embodiments, the condensation portion includes a condenser 315 and a water tank 316. Specifically, one end of the condenser 315 is connected to the second pipeline 240, allowing the carbon dioxide gas in the second pipeline 240 to enter the condenser 315. The condenser 315 can cool the carbon dioxide gas, condensing the gaseous carbon dioxide into liquid carbon dioxide. That is, the carbon dioxide gas becomes liquid carbon dioxide after flowing through the condenser 315.

[0034] In some embodiments, a liquid inlet line 317 and a liquid outlet line 318 are provided at each end of the water tank 316, respectively. Both the liquid inlet line 317 and the liquid outlet line 318 are connected to the water tank 316. Specifically, the liquid inlet line 317 is connected to the other end of the condenser 315. The carbon dioxide liquid, condensed by the condenser 315, can then enter the water tank 316 through the liquid inlet line 317. This allows the carbon dioxide liquid to sequentially pass through the second pipeline 240, the condenser 315, and the liquid inlet line 317. Furthermore, the liquid outlet line 318 is connected to the liquid inlet end 312, allowing the carbon dioxide to flow through the liquid inlet line 317, the water tank 316, and the liquid outlet line 318, and then enter the pressurizing device 311 through the liquid inlet end 312 for pressurization. In some more specific embodiments, the water tank 316 can serve as a heat exchange medium to further reduce the temperature of the carbon dioxide liquid. It can also act as a pressure buffer to stabilize the system pressure. In addition, the water tank 316 can serve as a safety device to prevent liquid backflow.

[0035] In some specific embodiments, a temperature and pressure detection device 600 is provided on the second pipeline 240 to detect the temperature and pressure of the carbon dioxide fluid before being condensed by the condenser 315. More specifically, the temperature and pressure detection device 600 is a temperature and pressure measuring instrument.

[0036] In some specific embodiments, a temperature and pressure detection device 600 is provided on the liquid inlet pipe 317 to detect the temperature and pressure of the carbon dioxide fluid after being condensed by the condenser 315. More specifically, the temperature and pressure detection device 600 is a temperature and pressure measuring instrument.

[0037] In some more specific embodiments, the temperature and pressure detection device 600 may be a temperature and pressure measuring instrument or other instrument capable of detecting temperature and pressure, which is not limited here, and is mainly capable of detecting temperature and pressure.

[0038] The wafer cleaning fluid supply device further includes a circulation unit; the circulation unit includes: a fourth pipeline 510, one end of which is disposed on the third pipeline 320 and communicates with the third pipeline 320; a circulation device 520 , provided at the other end of the fourth pipeline 510 , for regulating the pressure of the fourth pipeline 510 to convert the carbon dioxide liquid into carbon dioxide gas; A fifth pipeline 530 , one end of which is provided in the circulation device 520 and the other end of which is connected to the second pipeline 240 ; Part of the carbon dioxide liquid flows through the fourth pipeline 510 and the circulation device 520 and becomes carbon dioxide gas. The carbon dioxide gas flows through the fifth pipeline 530 and enters the second pipeline 240 and circulates to the condensation part.

[0039] In some embodiments, the circulation unit includes a fourth pipeline 510, a circulation device 520 and a fifth pipeline 530, wherein the fourth pipeline 510 and the fifth pipeline 530 are respectively arranged at both ends of the circulation device 520, so that the fluid can pass through the fourth pipeline 510, the circulation device 520 and the fifth pipeline 530 in sequence.

[0040] In some specific embodiments, one end of the fourth pipeline 510 is arranged in the third pipeline 320 and is connected to the interior of the third pipeline 320; the other end of the fourth pipeline 510 is connected to the circulation device 520; during the flow of the carbon dioxide fluid in the third pipeline 320, part of the carbon dioxide fluid will enter the fourth pipeline 510, which will be described in detail later.

[0041] In some specific embodiments, the circulation device 520 can regulate the pressure of the fourth pipeline 510, reducing the pressure of the carbon dioxide liquid in the fourth pipeline 510, thereby converting it into carbon dioxide gas and flowing out of the fifth pipeline 530. One end of the fifth pipeline 530 is connected to the circulation device 520, and the other end is located in and connected to the second pipeline 240. Specifically, a portion of the carbon dioxide liquid in the third pipeline 320 flows through the fourth pipeline 510 and enters the circulation device 520. The circulation device 520 converts the carbon dioxide liquid into carbon dioxide gas, which flows through the fifth pipeline 530 and enters the second pipeline 240, where it re-participates in the condensation process. In other words, a portion of the carbon dioxide liquid circulates to the condensation section, while the remaining portion flows through the heating device 314 and enters the drying chamber 400.

[0042] The circulation device 520 includes: The heating element 522 is disposed in the fourth pipeline 510 to heat the carbon dioxide liquid flowing through the fourth pipeline 510 into a supercritical carbon dioxide fluid.

[0043] A first pressure regulating member 521, one end of the first pressure regulating member 521 is connected to the other end of the fourth pipeline 510, and the other end of the first pressure regulating member 521 is connected to the fifth pipeline 530; to adjust the pressure of the supercritical carbon dioxide fluid so that the supercritical carbon dioxide fluid is converted into carbon dioxide gas.

[0044] In some embodiments, the fourth pipeline 510 is provided at one end of the first pressure regulating component 521 and is connected to the first pressure regulating component 521; the fifth pipeline 530 is connected to the first pressure regulating component 521; so that the carbon dioxide fluid can flow through the fourth pipeline 510, the first pressure regulating component 521 and the fifth pipeline 530 in sequence.

[0045] In some embodiments, a heating element 522 is disposed around the fourth pipe 510 and is capable of heating the fourth pipe 510, thereby heating the carbon dioxide fluid flowing through the fourth pipe 510 to a supercritical state. In some specific embodiments, the heating element 522 may be a resistance wire or other heating device, which is not limited herein, and is primarily intended to heat the carbon dioxide fluid in the fourth pipe 510 to a supercritical state. Specifically, heating by the heating device 314 causes the carbon dioxide fluid in the fourth pipe 510 to become a supercritical carbon dioxide fluid.

[0046] In some specific embodiments, the heating element 522 heats the carbon dioxide liquid in the fourth pipeline 510 to 60° C.-70° C.

[0047] In some specific embodiments, the pressure pump is a reciprocating stroke pump.

[0048] In some more specific embodiments, the heating element 522 can ensure that the carbon dioxide fluid in the fourth pipeline 510 and the third pipeline 320 is in a stable supercritical state. At the same time, because the supercritical carbon dioxide has a high density similar to that of a liquid, it can more evenly distribute pressure when flowing in the pipeline. At the same time, its low viscosity, similar to that of a gas, helps reduce friction and resistance of the fluid in the pipeline, thereby reducing pressure fluctuations caused by changes in fluid viscosity, thereby reducing pulsation in the pressure pump and improving the stability of the liquid supply.

[0049] In some more specific embodiments, the first pressure regulating component 521 can reduce the pressure of the supercritical carbon dioxide fluid, so that the supercritical carbon dioxide fluid is converted into carbon dioxide gas. After the supercritical carbon dioxide fluid is converted into carbon dioxide gas, it flows through the fifth pipeline 530 and the second pipeline 240 to re-participate in the condensation process. The first pressure regulating component 521 and the heating component 522 cooperate to return the supercritical fluid that has not been used in time to the condensation part and circulate it again, ensuring that there is always a supply of supercritical fluid, thereby realizing the function of stable supply of supercritical fluid.

[0050] In some embodiments, the third pipeline 320 and the fourth pipeline 510 are both provided with a temperature and pressure detection device 600 to detect the temperature and pressure of the carbon dioxide fluid.

[0051] In some specific embodiments, a temperature and pressure detection device 600 is provided on the third pipeline 320 for detecting the temperature and pressure of the carbon dioxide liquid in the third pipeline 320. Specifically, the temperature and pressure detection device 600 is a temperature and pressure measuring instrument.

[0052] In some specific embodiments, a temperature and pressure detection device 600 is provided on the fourth pipeline 510 to detect the temperature and pressure of the carbon dioxide liquid in the fourth pipeline 510. Specifically, the temperature and pressure detection device 600 is a temperature and pressure measuring instrument.

[0053] In some embodiments, the fourth pipeline 510 is disposed between the pressurizing device 311 and the heating device 314 .

[0054] In some specific embodiments, the end where the fourth pipeline 510 is connected to the third pipeline 320 is defined as a first end, and the first end is arranged between the pressurizing device 311 and the heating device 314, that is, after the carbon dioxide liquid is pressurized by the pressurizing device 311, it flows in the third pipeline 320, and part of the carbon dioxide liquid enters the fourth pipeline 510 at the first end for circulation, and another part of the carbon dioxide liquid flows through the heating device 314 and enters the drying chamber 400 for wafer processing.

[0055] The gas processing part further includes a second pressure regulating member 319 , which is disposed in the third pipeline 320 and placed between the heating device 314 and the drying chamber 400 to regulate the pressure of the supercritical dioxide fluid flowing through the third pipeline 320 into the drying chamber 400 .

[0056] In some embodiments, the second pressure regulating member 319 can adjust the pressure of the carbon dioxide fluid entering the drying chamber 400. Specifically, the first pressure regulating member 521 and the second pressure regulating member 319 can cooperate to adjust the pressure. When the wafers in the drying chamber 400 are processed, the pressure at the first pressure regulating member 521 increases, so that the carbon dioxide fluid can flow into the drying chamber 400 after passing through the heating device 314 and the second pressure regulating member 319 to process the wafers; after the wafer processing in the drying chamber 400 is completed, the pressure at the second pressure regulating member 319 is increased, and the pressure at the first pressure regulating member 521 is reduced, so that the unused supercritical carbon dioxide fluid passes through the fourth pipeline 510, the circulation device 520 and the fifth pipeline 530 and re-participates in the condensation process, so that the unused carbon dioxide fluid can be reused, thereby improving the utilization efficiency of the carbon dioxide fluid.

[0057] In addition, to stabilize the temperature of the carbon dioxide liquid, insulation is installed on both the third pipe 320 and the fourth pipe 510. Specifically, the insulation is installed on the third pipe 320, covering it and reducing heat loss from the third pipe 320. More specifically, the insulation is installed on the fourth pipe 510, covering it and reducing heat loss from the fourth pipe 510.

[0058] In some specific embodiments, the heating element 522 cooperates with the heating device 314 to enable the supercritical carbon dioxide fluid entering the drying chamber 400 to reach a set temperature, thereby ensuring the stability of the supercritical carbon dioxide fluid.

[0059] In some specific embodiments, the heating element 522, the heating device 314 and the heat-insulating cotton cooperate to enable the supercritical carbon dioxide fluid entering the drying chamber 400 to reach a set temperature to ensure the stability of the supercritical carbon dioxide fluid.

[0060] In some specific embodiments, the pressurizing device 311 and the first pressure regulating member 521 cooperate to reduce the pulsation generated by the pressurizing device 311 and ensure the pressure stability of the supercritical carbon dioxide fluid, thereby ensuring the stability of the supercritical carbon dioxide fluid.

[0061] In some more specific embodiments, the first pressure regulating member 521 and the second pressure regulating member 319 are both back pressure valves, so as to be able to control the fluid flow in the pipeline during the pressure regulation process.

[0062] The gas purification unit further includes a filter device 220 . The filter device 220 is disposed in the second pipeline 240 to filter the carbon dioxide gas flowing through the second pipeline 240 .

[0063] In some embodiments, the gas purification unit further includes a filter device 220 . The filter device 220 is disposed in the second pipeline 240 and is capable of filtering the carbon dioxide gas in the second pipeline 240 .

[0064] In some embodiments, the carbon dioxide gas is first purified and then filtered. In some specific embodiments, a gas purifier is used to purify the carbon dioxide gas, and a filter device 220 is provided on the second pipeline 240. The filter device 220 can effectively remove foreign matter contained in the carbon dioxide gas, thereby improving the purity of the carbon dioxide gas. In some specific embodiments, the filter device 220 is a filter.

[0065] The circulation unit further includes a throttling element, which is disposed on the fifth pipeline 530 to adjust the flow rate of the fluid flowing through the fifth pipeline 530 .

[0066] In some embodiments, a throttle element is further provided in the fifth pipeline 530 , and the throttle element can adjust the pressure and flow rate of the fifth pipeline 530 .

[0067] In some specific embodiments, the throttle member is provided with a plurality of throttle holes extending through the throttle member along its thickness. More specifically, when a fluid passes through the throttle holes, the external pressure experienced by the fluid suddenly decreases, causing the distance between fluid molecules to increase, thereby causing the fluid to expand in volume. This lowers the temperature and flow rate of the fluid after passing through the throttle holes, thereby regulating the pressure.

[0068] In some more specific embodiments, the connection between the pipe and each component is a fixed connection, and the pipe and the connected component are interconnected. Here, the second pipe 240 and the condensing device are used as an example; for example, the second pipe 240 is provided at one end of the condensing device, and the installation method can be adhesive, clamping, or bolted, etc., without limitation, as long as there is no relative movement between the two and they are interconnected.

[0069] In some more specific embodiments, each pipeline is provided with a plurality of control valves 710. More specifically, the control valves 710 are manual valves for controlling the flow rate and flow velocity of the fluid in the corresponding pipeline.

[0070] In some more specific embodiments, each pipeline is equipped with a safety valve. Its primary function is to prevent system pressure from exceeding a set safety limit. When pipeline pressure reaches or exceeds this limit, the safety valve automatically opens, releasing some fluid, thereby reducing system pressure and preventing equipment damage or accidents caused by overpressure. By promptly releasing excessive pressure, the safety valve effectively protects equipment such as pipelines, containers, pumps, and compressors from damage. Furthermore, it prevents leaks, explosions, and other accidents caused by equipment damage, thereby protecting operators and the surrounding environment.

[0071] In some more specific embodiments, each pipeline is provided with a pressure relief port for reducing the pressure of the corresponding pipeline. More specifically, a valve is provided at the pressure relief port to control the opening and closing of the pressure relief port.

[0072] In some embodiments, each pipeline is provided with a pressure reducing valve 720 and a pressure gauge 730 to detect the pressure in the corresponding pipeline. At the same time, the pressure in the pipeline can be adjusted by controlling the pressure reducing valve 720 to stabilize the pressure in the pipeline.

[0073] In some more specific embodiments, a gas detection portion 740 is provided on both sides of the second pipeline. The gas detection portion 740 is used to detect the purity of the carbon dioxide gas passing through the gas purification device 210. This is a prior art and will not be described in detail here.

[0074] In some more specific embodiments, the temperature of the carbon dioxide liquid in the third pipeline 320 is maintained at 1°C to 2°C. The heating device 314 heats the carbon dioxide liquid flowing into the drying chamber 400 to 80°C to 150°C. Specifically, the heating device 314 heats the carbon dioxide liquid flowing into the drying chamber 400 to 80°C, 100°C, or 150°C, thereby converting the carbon dioxide liquid into a supercritical carbon dioxide fluid. The heating element 522 heats the carbon dioxide liquid flowing through the fourth pipeline 510 to 60°C to 70°C.

[0075] The implementation principle of a wafer cleaning fluid supply device according to an embodiment of the present application is as follows: by setting a gas supply unit 100, a gas purification unit, a gas processing unit 300 and a circulation unit, the carbon dioxide gas supplied by the gas supply unit 100 is purified by the gas purification unit and becomes high-purity carbon dioxide gas; the high-purity carbon dioxide gas is processed by the gas processing unit 300 to become carbon dioxide liquid, and the temperature and pressure of the carbon dioxide liquid are controlled to make the carbon dioxide liquid become a supercritical carbon dioxide fluid and participate in the wafer drying process; the circulation part returns the supercritical fluid that is not used in time to the condensation part and circulates it again to ensure that there is always a supply of supercritical fluid, thereby realizing the function of stable supply of supercritical fluid. The problem of incomplete replacement during the drying process due to the instability of the supercritical fluid and the generation of particulate matter on the wafer surface is improved.

[0076] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A wafer cleaning fluid supply device, characterized in that: include: A gas supply unit (100) for providing carbon dioxide gas; A gas purification unit comprises a gas purification device (210), a first pipeline (230) and a second pipeline (240); the gas purification device (210) has an inlet end and an outlet end; the first pipeline (230) is connected to the inlet end so that the carbon dioxide gas provided by the gas supply unit (100) enters the gas purification unit via the first pipeline (230); the second pipeline (240) is connected to the outlet end; A gas processing unit (300) comprises a gas processing portion and a third pipeline (320); the gas processing portion is in communication with the second pipeline (240) and is used to process the carbon dioxide gas flowing through the second pipeline (240) and entering the gas processing portion to obtain a supercritical carbon dioxide fluid; One end of the third pipeline (320) is provided in the gas processing part, and the other end is used to connect to the drying chamber (400) of the wafer processing device, so that the carbon dioxide fluid in a supercritical state flows through the third pipeline (320) into the drying chamber (400); A circulation unit, one end of which is in communication with the third pipeline (320) and the other end of which is in communication with the second pipeline (240), circulates part of the carbon dioxide fluid to the gas processing unit (300) to stabilize the carbon dioxide fluid.

2. The wafer cleaning fluid supply device according to claim 1, wherein: The gas processing part includes: a condensing portion, communicating with the second pipeline (240) to liquefy the carbon dioxide gas into carbon dioxide liquid; The pressurizing device (311) has a liquid inlet end (312) and a liquid outlet end (313), wherein the liquid inlet end (312) is in communication with the condensing portion to pressurize the carbon dioxide liquid flowing through the liquid inlet end (312) and entering the pressurizing device (311); the third pipeline (320) is in communication with the liquid outlet end (313); The heating device (314) is provided in the third pipeline (320) to heat the carbon dioxide liquid flowing through the third pipeline (320) into the carbon dioxide fluid in a supercritical state.

3. The wafer cleaning fluid supply device according to claim 2, wherein: The circulation unit comprises: a fourth pipeline (510), one end of the fourth pipeline (510) being disposed on the third pipeline (320) and communicating with the third pipeline (320); a circulation device (520), provided at the other end of the fourth pipeline (510), for regulating the pressure of the fourth pipeline (510); a fifth pipeline (530), one end of which is provided at the circulation device (520) and the other end of which is in communication with the second pipeline (240); Part of the carbon dioxide liquid flows through the fourth pipeline (510) and the circulation device (520) to become the carbon dioxide gas, and the carbon dioxide gas flows through the fifth pipeline (530) and enters the second pipeline (240), and circulates to the condensation part.

4. The wafer cleaning fluid supply device according to claim 3, wherein: The circulation device (520) comprises: a heating element (522) provided in the fourth pipeline (510) for heating the carbon dioxide liquid flowing through the fourth pipeline (510) into the carbon dioxide fluid in a supercritical state; A first pressure regulating member (521), one end of the first pressure regulating member (521) is connected to the other end of the fourth pipeline (510), and the other end of the first pressure regulating member (521) is connected to the fifth pipeline (530); the pressure of the carbon dioxide fluid in the supercritical state is adjusted to change the carbon dioxide fluid in the supercritical state into the carbon dioxide gas.

5. The wafer cleaning fluid supply device according to claim 3, wherein: The fourth pipeline (510) is provided between the pressurizing device (311) and the heating device (314).

6. The wafer cleaning fluid supply device according to claim 2, wherein: The condensation part includes: a condenser (315), one end of which is in communication with the second pipeline (240) to cool the carbon dioxide gas flowing through the second pipeline (240); The water tank (316) has a liquid inlet pipeline (317) and a liquid outlet pipeline (318), wherein the liquid inlet pipeline (317) is connected to the other end of the condenser (315), and the liquid outlet pipeline (318) is connected to the liquid inlet end (312), so that the carbon dioxide liquid flows through the liquid inlet pipeline (317), the water tank (316), and the liquid outlet pipeline (318) in sequence and then enters the pressurizing device (311); the second pipeline (240) and the liquid inlet pipeline (317) are both provided with temperature and pressure detection devices (600) to detect the temperature and pressure at both ends of the condenser (315).

7. The wafer cleaning fluid supply device according to claim 2, wherein: The gas processing part further includes a second pressure regulating member (319), which is arranged in the third pipeline (320) and placed between the heating device (314) and the drying chamber (400) to regulate the pressure of the supercritical carbon dioxide fluid flowing through the third pipeline (320) into the drying chamber (400).

8. The wafer cleaning fluid supply device according to claim 4, wherein: The circulation unit further comprises a throttling element, which is arranged on the fifth pipeline (530) to adjust the flow rate of the liquid flowing through the fifth pipeline (530).

9. The wafer cleaning fluid supply device according to claim 4, wherein: The third pipeline (320) and the fourth pipeline (510) are both provided with temperature and pressure detection devices (600) to detect the temperature and pressure of the carbon dioxide fluid.

10. The wafer cleaning fluid supply device according to any one of claims 1 to 9, characterized in that: The gas purification unit further comprises a filtering device (220), wherein the filtering device (220) is provided on the second pipeline (240) to filter the carbon dioxide gas flowing through the second pipeline (240).

Images