Antenna device

Abstract

The antenna device comprises a first carrier plate, a signal line, a transistor, a second carrier plate, an antenna unit and a liquid crystal layer. The signal line is arranged on the first carrier plate. The transistor is arranged on the first carrier plate and comprises a grid electrode, a plurality of first electrodes and at least one second electrode. The gate is electrically connected to the control node. Each first electrode comprises an input end. The input ends are electrically connected with a signal line. The at least one second electrode and the first electrodes are arranged in a staggered manner along the arrangement direction. The at least one second electrode comprises an output end. The second carrier plate is arranged opposite to the first carrier plate. The antenna unit comprises a first antenna and a second antenna. The first antenna is arranged on the first carrier plate and is directly connected with the output end. The second antenna is arranged on the second carrier plate. The liquid crystal layer is located between the first antenna and the second antenna.

Description

Technical Field

[0001] The present invention relates to an antenna device. Background Art

[0002] The dielectric constant and refractive index of liquid crystal materials can be altered by an applied electric field. Therefore, if liquid crystal materials are used in antenna structures, such as patch antennas, the variable dielectric constant of the liquid crystal can be used to adjust the operating frequency or radiation direction of the liquid crystal antenna (patch antenna). For example, applying an electric field between metal plates sandwiching the liquid crystal can cause the liquid crystal alignment to reversibly change.

[0003] However, when the liquid crystal antenna is a reflective antenna operating in the high-frequency band, the bias line that applies an electric field to the metal plate affects the reflective antenna's resonance. For example, a reflective antenna without a bias line is in an over-coupled state, while a reflective antenna with a bias line is in an under-coupled state. This reduces the reflective antenna's phase variation. Summary of the Invention

[0004] At least one embodiment of the present invention provides an antenna device. The antenna device includes a first carrier, a first signal line, a first transistor, a second carrier, an antenna unit, and a liquid crystal layer. The first signal line is disposed on the first carrier. The first transistor is disposed on the first carrier and includes a first gate, a plurality of first electrodes, and at least one second electrode. The first gate is electrically connected to a first control node. Each first electrode includes a first input terminal. These first input terminals are electrically connected to the first signal line. At least one second electrode and these first electrodes are arranged alternately along an arrangement direction. At least one second electrode includes a first output terminal. The second carrier is disposed opposite the first carrier. The antenna unit includes a first antenna and a second antenna. The first antenna is disposed on the first carrier and directly connected to the first output terminal. The second antenna is disposed on the second carrier. The liquid crystal layer is located between the first antenna and the second antenna.

[0005] In at least one embodiment of the present invention, the antenna device further includes a second signal line, the second signal line is disposed on the first carrier board, and the first control node is electrically connected to the second signal line.

[0006] In at least one embodiment of the present invention, the first antenna has a first outer edge and a second outer edge. The first outer edge extends along a first direction, and the second outer edge extends along a second direction. The second direction is perpendicular to the first direction. The first output terminal is directly connected to the first outer edge. The antenna device further includes a second transistor disposed on the first carrier. The second transistor includes a second gate, a plurality of third electrodes, and at least one fourth electrode. The second gate is electrically connected to a second control node. Each third electrode includes a second input terminal. These second input terminals are electrically connected to a first signal line. At least one fourth electrode is arranged alternately with these third electrodes. At least one fourth electrode includes a second output terminal, and the second output terminal is directly connected to the second outer edge.

[0007] In at least one embodiment of the present invention, the antenna device further includes a second signal line, the second signal line is disposed on the first carrier board, and the first control node and the second control node are electrically connected to the second signal line.

[0008] In at least one embodiment of the present invention, a first control node is electrically connected to the first electrodes. A second control node is electrically connected to the third electrodes. The antenna device further includes a second signal line and a control transistor. The second signal line is disposed on the first carrier. The control transistor is disposed on the first carrier and includes a third gate, a fifth electrode, and a sixth electrode. The third gate is electrically connected to the second signal line. The fifth electrode is electrically connected to the first signal line. The sixth electrode is electrically connected to the first input terminals of the first electrodes and the second input terminals of the third electrodes. The first and third electrodes are electrically connected to the first signal line via the conductive control transistor.

[0009] In at least one embodiment of the present invention, the number of the first electrodes is a first number, the number of the at least one second electrode is a second number, and the ratio of the first number to the second number is (N+1) / N, where N is a positive integer from 1 to 30.

[0010] In at least one embodiment of the present invention, the overlapping length of the first electrodes and the at least one second electrode in the arrangement direction is in a range from 10 micrometers to 80 micrometers.

[0011] In at least one embodiment of the present invention, a width of each of the first electrodes and the at least one second electrode is in a range from 2 micrometers to 10 micrometers.

[0012] In at least one embodiment of the present invention, a gap is formed between one of the first electrodes and at least one adjacent second electrode, and the gap is in a range of 2 micrometers to 10 micrometers.

[0013] In at least one embodiment of the present invention, the first transistor further includes an electrode connecting portion. The electrode connecting portion extends along the arrangement direction and connects the first input terminals. The first signal line is electrically connected to the electrode connecting portion. The first electrodes are electrically connected to the first signal line via the electrode connecting portion.

[0014] Based on the above, in the antenna device disclosed in the above embodiments, the electrodes of the transistor are arranged in a fork shape and are directly connected to and in contact with the antenna unit. The transistor can not only block the resonant electrical signal generated by the antenna unit from leaking outward, but also serve as a switch for charging or discharging low-frequency signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] For a more complete understanding of the embodiments and their advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, wherein:

[0016] Figure 1 is a schematic diagram of an antenna device according to at least one embodiment of the present invention;

[0017] Figure 2 yes Figure 1 Schematic diagram of one of the antenna elements and transistors;

[0018] Figure 3 yes Figure 1 Cut along the A-A' segment and Figure 2 A schematic diagram of a partial cross section along the BB' cutting line;

[0019] Figure 4 yes Figure 1 A schematic diagram of one of the transistors in Figure 1.

[0020] Figure 5A and Figure 5B The antenna device of the control example and Figure 1 The simulation results of the S11 parameter phase difference of the antenna device;

[0021] Figure 6 is a schematic diagram of an antenna device according to another embodiment of the present invention;

[0022] Figure 7 yes Figure 6 Schematic diagram of one of the antenna elements, two transistors, and the control transistor;

[0023] Figure 8A yes Figure 7 A schematic diagram of a partial cross section along the C-C' cutting line;

[0024] Figure 8B yes Figure 7 a schematic circuit diagram of

[0025] Figure 9A and Figure 9B They are Figure 6 Simulation results of the amplitude ratio and phase difference of the S11 parameters of the antenna device.

[0026] Description of reference numerals:

[0027] 10A, 10B: Antenna assembly

[0028] 100A, 100B: Antenna structure

[0029] 110: First carrier board

[0030] 120: Second carrier board

[0031] 130A, 130B: Transistors

[0032] 131: Gate

[0033] 132,133: Electrodes

[0034] 132a: Input terminal

[0035] 133a: Output

[0036] 134: Electrode connection

[0037] 135: Semiconductor layer

[0038] 136: Gate insulation layer

[0039] 140: Antenna unit

[0040] 150: First antenna

[0041] 151: Frame

[0042] 151a, 151b, 151c, 151d: outer edge

[0043] 152: Main body

[0044] 153: protrusion

[0045] 154: Connection

[0046] 160: Second Antenna

[0047] 161: Outer frame

[0048] 162: Intersection

[0049] 163: Connection

[0050] 170: Liquid crystal layer

[0051] 180: Control transistor

[0052] 181: Gate

[0053] 182,183: Electrodes

[0054] 184: Semiconductor layer

[0055] 185: Gate insulation layer

[0056] 200: Antistatic structure

[0057] 300: Conductive ring

[0058] 400: First drive circuit

[0059] 500: Second driving circuit

[0060] 610: Auxiliary wire

[0061] 620: Shared electrode

[0062] 630: Conductive pad

[0063] 640: Sealing

[0064] 650: Conductive connection structure

[0065] 711,712,713,714,721,722,723,724,811,812,813,814,821,822,823,824,831,832,833,834,841,842,843,844: lines

[0066] AA: Antenna element area

[0067] BL: Bias trace

[0068] CL: common signal line

[0069] Clc: Liquid crystal capacitance

[0070] Cst: storage capacitor

[0071] DL: First signal line

[0072] D1, D2, D3, D4: dielectric layer

[0073] GL: Second signal line

[0074] GM: Ground Metal Layer

[0075] L: length

[0076] M1, M2, M3, M4: metal layers

[0077] S: gap

[0078] W: width

[0079] X,Y: direction DETAILED DESCRIPTION

[0080] In the following text, in order to clearly present the technical features of the present disclosure, the dimensions (such as length, width, thickness and depth) of the elements (such as layers, films, substrates and regions, etc.) in the drawings will be enlarged in a non-proportional manner, and the number of some elements will be reduced. Therefore, the description and explanation of the embodiments below are not limited to the number of elements in the drawings and the dimensions and shapes presented by the elements, but should cover the dimensions, shapes and deviations thereof caused by actual processes and / or tolerances. For example, the flat surface shown in the drawings may have rough and / or nonlinear features, while the acute angles shown in the drawings may be rounded. Therefore, the elements presented in the drawings of the present disclosure are mainly for illustration and are not intended to accurately depict the actual shape of the elements, nor are they intended to limit the claims of the present disclosure.

[0081] Secondly, the terms "about," "approximately," or "substantially" used in this disclosure encompass not only the numerical values ​​and numerical ranges explicitly recited, but also the permissible deviations understood by those skilled in the art to which the invention relates. This deviation may be determined by measurement errors, such as those caused by limitations of the measurement system or process conditions. For example, when two objects (e.g., planes or traces on a substrate) are "substantially parallel" or "substantially perpendicular," "substantially parallel" and "substantially perpendicular," respectively, mean that the parallelism and perpendicularity between the two objects may include non-parallelism and non-perpendicularity caused by the permissible deviations.

[0082] In addition, "about" may mean within one or more standard deviations of the aforementioned value, such as ±30%, ±20%, ±10%, or ±5%. The terms "about," "approximately," or "substantially" used in this disclosure may be used to define acceptable deviations or standard deviations depending on the optical, etching, mechanical, or other properties. A single standard deviation is not intended to be used to define all optical, etching, mechanical, or other properties.

[0083] Spatially relative terms used in this disclosure, such as "below," "under," "above," and "on," are intended to facilitate description of the relative relationship between one element or feature and another, as illustrated in the figures. The true meaning of these spatially relative terms encompasses other orientations. For example, when a figure is flipped 180 degrees, the relationship between one element and another may change from "below" or "under" to "above" or "on." Furthermore, spatially relative descriptions used in this disclosure should be interpreted similarly.

[0084] Furthermore, the present invention may be implemented or applied through various other specific embodiments. The details of the present invention may also be combined, modified, and altered based on different perspectives and applications without departing from the spirit of the present invention. For clarity of the following embodiments, elements with the same or similar functions are denoted by the same reference numerals.

[0085] Figure 1 is a schematic diagram of an antenna device 10A according to at least one embodiment of the present invention. Figure 2 yes Figure 1 Schematic diagram of one of the antenna units 140 and the transistor 130A. Figure 3 yes Figure 1 Cut along the A-A' segment and Figure 2 Schematic diagram of a partial cross-section along the BB' cutting line segment. Figure 4 yes Figure 1 Schematic diagram of one of the transistors 130A. Figures 1 to 4 The antenna device 10A can be a reflective antenna device or a penetrating antenna device, and can prevent high-frequency resonant electrical signal leakage from affecting resonance without affecting the charging or discharging of low-frequency signals. The antenna device 10A includes a plurality of first signal lines DL, a plurality of second signal lines GL, a plurality of bias traces BL, an antenna structure 100A, a plurality of anti-static structures 200, a conductive ring 300, a first drive circuit 400, and a second drive circuit 500.

[0086] exist Figure 1 In the example shown in FIG. 1 , a plurality of first signal lines DL electrically connect the first driving circuit 400 and the antenna structure 100A, while a plurality of second signal lines GL electrically connect the second driving circuit 500 and the antenna structure 100A. The plurality of first signal lines DL and the plurality of second signal lines GL respectively transmit control signals output by the first driving circuit 400 and the second driving circuit 500 to the antenna structure 100A to adjust the direction, phase, or intensity of electromagnetic waves reflected by the antenna structure 100A.

[0087] The plurality of anti-static structures 200 are electrically connected to the first signal lines DL and the second signal lines GL, respectively, at ends away from the first driving circuit 400 and the second driving circuit 500, to protect the antenna structure 100A from static electricity. The anti-static structures 200 can be lightning rods, diodes, or anti-static rings.

[0088] The conductive ring 300 surrounds the antenna structure 100A, and a portion of the conductive ring 300's vertical projection overlaps a portion of the first signal line DL and a portion of the second signal line GL. The conductive ring 300 is electrically connected to a common voltage signal, such as a ground signal, a DC signal, or an AC signal.

[0089] Specifically, the antenna structure 100A includes a first carrier 110, a second carrier 120, a plurality of transistors 130A, a plurality of antenna elements 140, and a liquid crystal layer 170. The first carrier 110 and the second carrier 120 are disposed opposite each other. The materials of the first carrier 110 and the second carrier 120 can be glass, quartz, organic polymers, or other suitable materials. A plurality of first signal lines DL are spaced apart along a direction X on the first carrier 110, while a plurality of second signal lines GL are spaced apart along a direction Y on the first carrier 110. The plurality of first signal lines DL and the plurality of second signal lines GL intersect to define a plurality of antenna element areas AA, with one transistor 130A and one antenna element 140 being located in one of the antenna element areas AA.

[0090] It should be noted that in Figure 1 In the example, the antenna structure 100A includes multiple antenna units 140 to form an antenna array. In other embodiments, the antenna structure 100A may not be an antenna array, so the antenna device 10A may only include one first signal line DL and one second signal line GL to match the antenna structure 100A.

[0091] Multiple transistors 130A are disposed on the first substrate 110 and are located in the antenna element areas AA. Each transistor 130A includes a gate 131, multiple electrodes 132, multiple electrodes 133, an electrode connection portion 134, a semiconductor layer 135, and a gate insulation layer 136. These electrodes 132 and 133 are spaced apart from each other and arranged in a staggered manner along the arrangement direction. For example, these electrodes 132 and 133 are arranged in a comb-like pattern along the direction X. In other embodiments, each transistor 130A may include only two electrodes 132 and one electrode 133, or one electrode 132 and two electrodes 133.

[0092] exist Figure 1 In the example, the plurality of electrodes 132 may be drain electrodes, and the plurality of electrodes 133 may be source electrodes, but the present invention is not limited thereto. In other embodiments, the plurality of electrodes 132 may be source electrodes, and the plurality of electrodes 133 may be drain electrodes. The electrode connecting portion 134 extends along the arrangement direction (e.g., direction X) and connects one end of these electrodes 132. The semiconductor layer 135 may overlap with the gate 131 in the vertical direction of the first carrier 110, and the semiconductor layer 135 is located between the gate 131 and the electrode 132, and between the gate 131 and the electrode 133. The gate insulating layer 136 is located between the gate 131 and the semiconductor layer 135.

[0093] The gates 131 of these transistors 130A are electrically connected to a plurality of control nodes. Figure 1In the example, these control nodes are electrically connected to a plurality of second signal lines GL, that is, the gates 131 of these transistors 130A are electrically connected to a plurality of second signal lines GL. The plurality of electrodes 132 of these transistors 130A are electrically connected to a plurality of bias lines BL, and are electrically connected to a plurality of first signal lines DL via these bias lines BL. For example, the plurality of electrodes 132 of each transistor 130A can be electrically connected to a corresponding bias line BL via an electrode connection portion 134, thereby electrically connecting to a corresponding first signal line DL.

[0094] In particular, each transistor 130A can be equivalent to a band stop filter. Each electrode 132 includes an input terminal 132a, and each electrode 133 includes an output terminal 133a. The electrode connection portion 134 connects these input terminals 132a. In each transistor 130A, these input terminals 132a are electrically connected to the corresponding first signal line DL via the electrode connection portion 134 and the corresponding bias trace BL, and these output terminals 133a are directly connected to the antenna unit 140 located in the same antenna unit area AA. In other words, these output terminals 133a directly contact the antenna unit 140, and there is no solder or other bias circuit between these output terminals 133a and the antenna unit 140.

[0095] Furthermore, the number of electrodes 132 can be set to a first number, and the number of electrodes 133 can be set to a second number, and the ratio of the first number to the second number can be (N+1) / N, where N is a positive integer from 1 to 30. That is, the number of electrodes 132 and the number of electrodes 133 can differ by 1. In other embodiments, the number of electrodes 132 can be the same as the number of electrodes 133.

[0096] In addition, the length L of the overlap of the electrodes 132 and 133 in the arrangement direction (e.g., direction X) is in the range of 10 μm to 80 μm. The width W of each electrode 132 and each electrode 133 is in the range of 2 μm to 10 μm. There is a gap S between one electrode 132 and one adjacent electrode 133, and the gap S is in the range of 2 μm to 10 μm. Figure 1 In the example, the gap S between each electrode 132 and one of the adjacent electrodes 133 is in the range of 2 μm to 10 μm.

[0097] The antenna unit 140 includes a first antenna 150 and a second antenna 160. The first antenna 150 and the second antenna 160 are respectively disposed on the first carrier 110 and the second carrier 120, and the vertical projection of the first antenna 150 partially overlaps with the vertical projection of the second antenna 160. Figure 1 and Figure 2To clearly illustrate the structure of the first antenna 150 , the structure of the first antenna 150 that overlaps with the second antenna 160 is still drawn with a solid line.

[0098] The first antenna 150 includes a frame portion 151, a plurality of main body portions 152, a plurality of protrusions 153 and a plurality of connection portions 154. The frame portion 151 is roughly rectangular in shape and has four outer edges 151a, 151b, 151c, and 151d, wherein the outer edges 151a and 151c extend along direction X, and the outer edges 151b and 151d extend along direction Y. In other words, the extension direction of the outer edges 151a and 151c can be perpendicular to the extension direction of the outer edges 151b and 151d. In each antenna unit area AA, these output terminals 133a of the transistor 130A can be directly connected to any outer edge 151a, 151b, 151c, and 151d of the frame portion 151. Figure 1 In the example shown in FIG. 5 , the output terminals 133 a are directly connected to the outer edge 151 a .

[0099] Multiple main bodies 152 are located within the frame 151 and are adjacent to the four outer edges 151a, 151b, 151c, and 151d. Each main body 152 is roughly rectangular in shape. Multiple protrusions 153 connect the edges of the main bodies 152 away from the frame 151. Each protrusion 153 is roughly rectangular in shape, and the side length of each protrusion 153 is smaller than the side length of each main body 152. Multiple connecting portions 154 connect the frame 151 and the multiple main bodies 152 at intervals.

[0100] The second antenna 160 includes an outer frame 161, an intersection 162, and multiple connecting portions 163. The outer frame 161 is roughly rectangular in shape. The intersection 162 is located within and spaced apart from the outer frame 161. The intersection 162 is roughly cross-shaped. Multiple connecting portions 163 connect the outer frame 161 and the intersection 162 at intervals. Furthermore, the vertical projections of the multiple main portions 152 of the first antenna 150 partially overlap with the vertical projections of the outer frame 161 and the intersection 162 of the second antenna 160, and the vertical projections of the multiple protrusions 153 of the first antenna 150 also partially overlap with the vertical projections of the intersection 162 of the second antenna 160. The liquid crystal layer 170 is located between the first antenna 150 and the second antenna 160. In other words, the liquid crystal layer 170, the first antenna 150, and the second antenna 160 are located between the first carrier 110 and the second carrier 120.

[0101] Specifically, the antenna device 10A further includes a ground metal layer GM, four metal layers M1, M2, M3, and M4, and four dielectric layers D1, D2, D3, and D4. The ground metal layer GM is stacked on one side of the first substrate 110. On the other side of the first substrate 110, i.e., the side facing the second substrate 120, a metal layer M1, a dielectric layer D1, a metal layer M2, a dielectric layer D2, a metal layer M3, and a dielectric layer D3 are stacked in sequence. On the side of the second substrate 120 facing the first substrate 110, a metal layer M4 and a dielectric layer D4 are stacked in sequence. The liquid crystal layer 170 is sandwiched between the metal layers M3 and M4 and the dielectric layers D3 and D4.

[0102] Furthermore, the second signal line GL and gate 131 belong to metal layer M1, while the first signal line DL, bias trace BL, electrodes 132, 133, and electrode connector 134 belong to metal layer M2. Gate insulation layer 136 belongs to dielectric layer D1. First antenna 150 belongs to metal layer M3, and electrode 133 can directly contact first antenna 150 through dielectric layer D2. Second antenna 160 belongs to metal layer M4.

[0103] On the other hand, a portion of the conductive ring 300 belongs to metal layer M1, while the remaining portion belongs to metal layer M2, thereby preventing interference with the first signal line DL or the second signal line GL. Furthermore, the antenna device 10A includes a plurality of auxiliary conductive lines 610, a common electrode 620, a plurality of conductive pads 630, a sealing compound 640, and a conductive connection structure 650. The auxiliary conductive lines 610 are used to reduce the resistance of the conductive ring 300. Therefore, when adjacent to a portion of the conductive ring 300 belonging to metal layer M1, the auxiliary conductive line 610 can belong to metal layer M2, while when adjacent to the remaining portion of the conductive ring 300 belonging to metal layer M2, the auxiliary conductive line 610 can belong to metal layer M1. The common electrode 620 belongs to metal layer M4.

[0104] Multiple conductive pads 630 can respectively penetrate dielectric layers D1 and D2, dielectric layer D2, and dielectric layer D4 to electrically connect the conductive ring 300, auxiliary conductive line 610, and common electrode 620. The conductive pads 630 can be made of indium tin oxide, indium zinc oxide, fluorine-doped indium oxide, or other metal oxide conductive materials. Sealant 640 surrounds the liquid crystal layer 170 and is located between the conductive pads 630. Conductive connection structures 650 are distributed within the sealing compound 640, ensuring electrical connectivity between the conductive ring 300, auxiliary conductive line 610, common electrode 620, and conductive pads 630.

[0105] For example, when the antenna device 10A receives electromagnetic waves operating in an operating frequency band (26 GHz to 30 GHz), the first antenna 150 and the second antenna 160 form a resonant current path, thereby forming a magnetic field and exciting electromagnetic waves. In particular, the electrodes 132 and 133 of each transistor 130A are arranged in an interdigital shape, forming an interdigital capacitor (IC), which can be equivalent to a band-stop filter that shields (blocks) electrical signals in this operating frequency band. In other words, the transistor 130A can prevent the resonant electrical signal generated by the antenna unit 140 from leaking out. Therefore, the transistor 130A can block the coupling problem caused by the antenna unit 140 to the bias line BL, the first signal line DL, the second signal line GL, or other signal sources.

[0106] In addition, transistor 130A can also serve as a switch for charging or discharging low-frequency signals. Specifically, when transistor 130A is turned on, the first signal line DL can be connected to the first antenna 150 via the semiconductor layer 135, and the control signal transmitted by the first signal line DL can be transmitted to the first antenna 150. The voltage difference between the first antenna 150 and the second antenna 160 can charge or discharge the liquid crystal capacitor Clc formed by the liquid crystal layer 170, thereby changing the dielectric constant of the liquid crystal layer 170. The change in the dielectric constant of the liquid crystal layer 170 can cause the frequency of the electromagnetic waves reflected by the antenna unit 140 to shift. In this way, adjusting the voltage difference between the first antenna 150 and the second antenna 160 can control the direction, phase, or intensity of the electromagnetic waves reflected by the antenna structure 100A. Therefore, the transistor 130A, which forms an interdigitated capacitor, can not only shield the leakage of high-frequency electrical signals generated by the antenna unit 140, but also allow low-frequency signals to charge or discharge the liquid crystal capacitor Clc formed by the liquid crystal layer 170 through it.

[0107] For example, during a frame, multiple first signal lines DL sequentially transmit control signals, for example, along direction X. Multiple second signal lines GL sequentially transmit control signals, for example, along a sequence opposite to direction Y. This turns on corresponding transistors 130A, allowing the first antenna 150 of the antenna unit 140 to receive the control signals (low-frequency signals) transmitted by the first signal lines DL, thereby changing the dielectric constant of the liquid crystal layer 170 of the antenna unit 140. At the end of this frame, the multiple second signal lines GL sequentially turn off corresponding transistors 130A. Subsequently, during the next frame, the multiple first signal lines DL sequentially change the control signals they transmit, while the multiple second signal lines GL sequentially turn on corresponding transistors 130A. In this way, the antenna device 10A can control the direction, phase, or intensity of reflected electromagnetic waves through this cyclical control.

[0108] Figure 5A and Figure 5B The antenna device of the control example and Figure 1 The simulation results of the S11 parameter phase difference of the antenna device 10A are shown in FIG. Figure 5A and Figure 5B The vertical axis represents angle in degrees, while the horizontal axis represents frequency in GHz. Lines 711, 712, 713, and 714 represent the S11 parameter phase differences when the dielectric constant of the liquid crystal layer of the comparative antenna device is 2.45, 2.81, 3.17, and 3.53, respectively. Lines 721, 722, 723, and 724 represent the S11 parameter phase differences when the dielectric constant of the liquid crystal layer 170 of antenna device 10A is 2.45, 2.81, 3.17, and 3.53, respectively. The comparative antenna device and antenna device 10A are similar, but differ in that the transistors in the comparative antenna device are not directly connected to the antenna element, but are connected to the antenna element via bias traces.

[0109] like Figure 5A and Figure 5B As shown, within the frequency range of 28 GHz to 32 GHz, the S11 parameter of the comparative example antenna device is in an undercoupled state, meaning that the phase variation of the comparative example antenna device does not exceed 180 degrees. Within the frequency range of 25 GHz to 29 GHz, the S11 parameter of antenna device 10A transitions to an overcoupled state, meaning that the phase variation of antenna device 10A exceeds 180 degrees. In other words, in antenna device 10A, because transistor 130A directly contacts antenna element 140 to shield the leakage of the high-frequency electrical signal generated by antenna element 140, the phase variation of antenna device 10A is not reduced, thus maintaining the overcoupled state.

[0110] Figure 6 FIG. 1 is a schematic diagram of an antenna device 10B according to another embodiment of the present invention. Figure 7 yes Figure 6 Schematic diagram of one of the antenna units 140, two transistors 130A, 130B and a control transistor 180. Figure 8A yes Figure 7 Schematic diagram of a partial cross-section along the C-C' cutting line segment. Figure 8B yes Figure 7 See the schematic circuit diagram. Figures 6 to 8B , Figure 6 The antenna device 10B is similar to Figure 1 The difference between the antenna device 10A and the antenna device 10B is that the antenna device 10B further includes a plurality of common signal lines CL, and the antenna structure 100B of the antenna device 10B further includes a plurality of transistors 130B and a plurality of control transistors 180.

[0111] exist Figure 6In the example, multiple common signal lines CL are arranged on the first carrier 110 at intervals along the direction Y. In addition, the multiple common signal lines CL can be parallel to the multiple second signal lines GL and are distributed on the first carrier 110 at equal intervals with the multiple second signal lines GL. The structure of each transistor 130B is similar to that of each transistor 130A. In other words, each transistor 130B can also form an interdigitated capacitor and can be equivalent to a band-stop filter. It should be noted that Figure 6 and Figure 7 To clearly illustrate the structure of the first antenna 150 , the structure of the first antenna 150 that overlaps with the second antenna 160 is still drawn with a solid line.

[0112] Each transistor 130B also includes a gate 131, a plurality of electrodes 132, a plurality of electrodes 133, an electrode connection portion 134, a semiconductor layer 135, and a gate insulating layer 136. Figure 6 and Figure 7 In the example shown in FIG. 1 , in each transistor 130B, the electrodes 132 and 133 are arranged in a comb-like pattern along a direction Y. The electrode connection portion 134 extends along the direction Y and connects the electrodes 132 . The control transistor 180 includes a gate 181 , an electrode 182 , an electrode 183 , a semiconductor layer 184 , and a gate insulating layer 185 .

[0113] In the antenna structure 100B, the gates 181 of the plurality of control transistors 180 are electrically connected to the plurality of second signal lines GL, respectively, and the electrodes 182 of the plurality of control transistors 180 are electrically connected to the plurality of first signal lines DL, respectively. In addition, the electrodes 183 of the plurality of control transistors 180 are electrically connected to the plurality of electrodes 132 of the plurality of transistors 130A and the electrodes 132 of the plurality of transistors 130B via the plurality of bias lines BL, respectively. That is, in each control transistor 180, the gate 181 is electrically connected to the corresponding second signal line GL, and the electrode 182 is electrically connected to the corresponding first signal line DL, and the electrode 183 is electrically connected to the electrode connection portion 134 of the corresponding transistor 130A and the electrode connection portion 134 of the corresponding transistor 130B. Therefore, as Figure 4 and Figure 7 As shown, the electrode 183 is electrically connected to the corresponding multiple input terminals 132 a of the transistor 130A and the corresponding multiple input terminals 132 a of the transistor 130B.

[0114] For reference Figure 4Specifically, in each antenna element area AA, the gate 131 of transistor 130A is electrically connected to a control node, which is in turn electrically connected to an electrode 132 of transistor 130A. That is, in transistor 130A, gate 131 is electrically connected to multiple electrodes 132. Similarly, the gate 131 of transistor 130B is electrically connected to a control node, which is in turn electrically connected to an electrode 132 of transistor 130B. That is, in transistor 130B, gate 131 is electrically connected to multiple electrodes 132. Furthermore, the output terminals 133a of electrode 133 of transistor 130A can be directly connected to an outer edge 151a of the first antenna 150, while the output terminals 133a of electrode 133 of transistor 130B can be directly connected to an outer edge 151b of the first antenna 150. In other words, transistors 130A and 130B are directly connected to the mutually perpendicular outer edges 151a and 151b of the first antenna 150, respectively.

[0115] Furthermore, both the common signal line CL and the second signal line GL belong to metal layer M1. In control transistor 180, gate 181 belongs to metal layer M1, electrodes 182 and 183 belong to metal layer M2, and gate insulation layer 185 belongs to dielectric layer D1. In each transistor 130A and 130B, gate 131 belongs to metal layer M1, electrodes 132 and 133 belong to metal layer M2, and gate insulation layer 136 belongs to dielectric layer D1. Electrode 132 can directly contact gate 131 through dielectric layer D1.

[0116] A vertical projection of the common signal line CL may partially overlap a vertical projection of the electrode 183 of the control transistor 180. The dielectric layer D1 between the common signal line CL and the electrode 183 may form a storage capacitor Cst to maintain the voltage levels of the electrode 183, the multiple electrodes 132 of the transistor 130A, and the multiple electrodes 132 of the transistor 130B.

[0117] In each antenna unit area AA, the control transistor 180 can simultaneously drive the transistors 130A and 130B to charge or discharge the liquid crystal capacitor Clc and the storage capacitor Cst. For example, when the second signal line GL turns on the corresponding control transistor 180, the electrode 132 of the transistor 130A and the electrode 132 of the transistor 130B can be electrically connected to the first signal line DL through the turned-on control transistor 180. If the control signal transmitted by the first signal line DL is a high potential, the liquid crystal capacitor Clc can be charged through the transistors 130A and 130B, and at the same time, the storage capacitor Cst is also charged. If the control signal transmitted by the first signal line DL is a low potential, the liquid crystal capacitor Clc can be discharged through the transistors 130A and 130B, and at the same time, the storage capacitor Cst is also discharged.

[0118] In this way, by simultaneously driving transistors 130A and 130B via control transistor 180, antenna device 10B can simplify the circuitry for driving transistors 130A and 130B. It should be noted that in other embodiments, the antenna device may not include control transistor 180. Therefore, the gates 131 of transistors 130A and 130B need only be connected to the second signal line GL, rather than being electrically connected to their respective electrodes 132. However, the electrodes 132 of transistors 130A and 130B need only be connected to the first signal line DL. The liquid crystal capacitor Clc and storage capacitor Cst can also be charged or discharged under the control of transistors 130A and 130B.

[0119] Figure 9A and Figure 9B They are Figure 6 The simulation results of the gain and phase difference of the S11 parameter of the antenna device 10B are shown in FIG. Figure 9A , the vertical axis represents gain, and the unit is decibel (dB), and the horizontal axis represents frequency, and the unit is GHz, where lines 811, 812, 813, and 814 respectively represent the gains of the S11 parameters of the antenna device 10B in the TE mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53, and lines 821, 822, 823, and 824 respectively represent the gains of the S11 parameters of the antenna device 10B in the TM mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53.

[0120] See Figure 9B , the vertical axis represents the angle, and the unit is degree, and the horizontal axis represents the frequency, and the unit is GHz, where lines 831, 832, 833, and 834 respectively represent the phase differences of the S11 parameter when the dielectric constant of the liquid crystal layer 170 of the antenna device 10B is 2.45, 2.81, 3.17, and 3.53 in the TE mode, and lines 841, 842, 843, and 844 respectively represent the phase differences of the S11 parameter when the dielectric constant of the liquid crystal layer 170 of the antenna device 10B is 2.45, 2.81, 3.17, and 3.53 in the TM mode.

[0121] If the antenna device 10B is placed horizontally on the ground, the antenna device 10B set to the TE mode can be regarded as reflecting vertically polarized electromagnetic waves, while the antenna device 10B set to the TM mode can be regarded as reflecting horizontally polarized electromagnetic waves. Figure 9A and Figure 9BAs shown, the S11 parameter of antenna device 10B operates in nearly the same frequency range in both TE and TM modes. In other words, antenna device 10B can achieve polarity symmetry, polarity consistency, and polarity balance through the matching of transistors 130A and 130B. Therefore, each first antenna 150 of antenna device 10B can be positioned symmetrically relative to the center of each first antenna 150 by using two or more transistors 130A and 130B in an even number, thereby avoiding the problem of asymmetric resonant structure.

[0122] In summary, in antenna device 10A, the electrodes 132 and 133 of transistor 130A are arranged in an interdigitated pattern and directly connected to and in contact with antenna element 140. Transistor 130A not only blocks the leakage of the resonant electrical signal generated by antenna element 140 but also serves as a switch for charging and discharging low-frequency signals. Furthermore, in antenna device 10B, transistors 130A and 130B, each having interdigitated electrodes 132 and 133, are directly connected to and in contact with the mutually perpendicular outer edges 151a and 151b of antenna element 140, thereby achieving polarity symmetry in antenna device 10B. Furthermore, control transistor 180 can simultaneously drive transistors 130A and 130B, simplifying the circuitry for driving transistors 130A and 130B in antenna device 10B.

[0123] Although the present invention has been disclosed above with reference to the embodiments, they are not intended to limit the present invention. Those skilled in the art in the art to which the present invention belongs may make some changes and modifications without departing from the concept and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the claims.

Claims

1. An antenna device, comprising: a first carrier board; A first signal line is provided on the first carrier board; A first transistor is disposed on the first carrier and comprises: a first gate electrically connected to a first control node; a plurality of first electrodes, wherein each of the first electrodes comprises a first input end, and the first input ends are electrically connected to the first signal line; and At least one second electrode is arranged alternately with the first electrodes along an arrangement direction, wherein the at least one second electrode comprises a first output end; a second carrier plate, disposed opposite the first carrier plate; An antenna unit, including: a first antenna, disposed on the first carrier board and directly connected to the first output end; and a second antenna disposed on the second carrier board; and A liquid crystal layer is located between the first antenna and the second antenna.

2. The antenna device according to claim 1, further comprising: A second signal line is disposed on the first carrier board, wherein the first control node is electrically connected to the second signal line.

3. The antenna device of claim 1 , wherein the first antenna has a first outer edge and a second outer edge, the first outer edge extending along a first direction, and the second outer edge extending along a second direction perpendicular to the first direction, and the first output terminal is directly connected to the first outer edge; The antenna device further comprises: a second transistor disposed on the first carrier and comprising: a second gate electrically connected to a second control node; a plurality of third electrodes, wherein each of the third electrodes comprises a second input end, and the second input ends are electrically connected to the first signal line; and At least one fourth electrode is arranged alternately with the third electrodes, wherein the at least one fourth electrode comprises a second output end, and the second output end is directly connected to the second outer edge.

4. The antenna device according to claim 3, further comprising: A second signal line is disposed on the first carrier board, wherein the first control node and the second control node are electrically connected to the second signal line.

5. The antenna device as claimed in claim 3, wherein the first control node is electrically connected to the first electrodes, and the second control node is electrically connected to the third electrodes; The antenna device further comprises: A second signal line is disposed on the first carrier board; and A control transistor is disposed on the first carrier board and comprises: a third gate electrically connected to the second signal line; a fifth electrode electrically connected to the first signal line; and A sixth electrode is electrically connected to the first input terminals of the first electrodes and the second input terminals of the third electrodes, wherein the first electrodes and the third electrodes are electrically connected to the first signal line via the turned-on control transistor.

6. The antenna device as claimed in claim 1, wherein the number of the first electrodes is a first number, the number of the at least one second electrode is a second number, and a ratio of the first number to the second number is (N+1) / N, wherein N is a positive integer from 1 to 30. 7 . The antenna device as claimed in claim 1 , wherein an overlapping length of the first electrodes and the at least one second electrode in the arrangement direction is in a range of 10 μm to 80 μm. 8 . The antenna device as claimed in claim 1 , wherein a width of each of the first electrodes and the at least one second electrode is in a range from 2 micrometers to 10 micrometers. 9 . The antenna device as claimed in claim 1 , wherein a gap is formed between one of the first electrodes and the at least one adjacent second electrode, and the gap is in a range of 2 μm to 10 μm.

10. The antenna device as claimed in claim 1, wherein the first transistor further comprises: An electrode connecting portion extends along the arrangement direction and connects the first input ends, wherein the first signal line is electrically connected to the electrode connecting portion, and the first electrodes are electrically connected to the first signal line via the electrode connecting portion.

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