Flexible multi-dimensional indium gallium arsenic focal plane detector and preparation method thereof

Abstract

The invention discloses a flexible multi-dimensional indium gallium arsenic focal plane detector and a preparation method thereof, and belongs to the technical field of photoelectric detection, and the structure of the focal plane detector comprises a polymer flexible substrate and at least one detector unit; the detector unit is positioned on one side of the light incident surface of the polymer flexible substrate; the detector unit structure comprises an InGaAs absorption layer, an InGaAs / InAlAs transition layer, an InAlAs Schottky barrier enhancement layer, a dielectric layer and a metasurface structure layer which are arranged in sequence in the direction away from the polymer flexible substrate; the material of the dielectric layer comprises SiO2, Al2O3, TiO2, HfO2 or Si3N4; the metasurface structure layer is made of a metal material or an optical medium material. The focal plane detector not only can realize visible-short wave infrared wide spectrum detection, but also has higher-dimension polarization detection and hyperspectral detection capabilities, and meanwhile, has good flexibility and bendability so as to adapt to the requirements of different application scenes.

Description

Technical Field

[0001] The present invention belongs to the field of photoelectric detection technology, and specifically relates to a flexible multi-dimensional indium gallium arsenide focal plane detector and a preparation method thereof. Background Art

[0002] In 1-x Ga x As is a III-V group direct bandgap semiconductor material, and its detection cutoff wavelength can cover the entire short-wave infrared band as the alloy composition x changes. When x is 0.47, In 0.53 Ga 0.47 As fully matches the InP substrate lattice, thus achieving the growth of high-quality epitaxial layers. 0.53 Ga 0.47 As has a band gap of 0.75 eV and a theoretical cutoff response wavelength of 1700 nm. In addition, InGaAs has the advantages of high carrier mobility, high quantum efficiency, and near-room temperature operation. It is generally the material of choice for short-wave infrared detection and has been widely used in a variety of fields such as space remote sensing, astronomical observation, and spectral imaging. Currently, the operating wavelength range of typical commercial InGaAs detectors is 900-1700 nm. In low-light night vision environments such as atmospheric glow, moonlight, and starlight, the spectral energy of the light source is mainly concentrated in the 400-1700 nm band. Therefore, the development of a spectral imaging detection system covering the 400-1700 nm band has important application value.

[0003] In recent years, flexible optoelectronic devices have attracted widespread attention due to their small size, light weight, bendability, portability, and flexible and diverse application scenarios. Flexible photodetectors can be attached to the surfaces of irregular objects to achieve continuous measurement of spatial information. For example, they can be attached to the surface of the human body as detection units in wearable electronic products, or installed on the curved surfaces of virtual reality interactive equipment, implantable medical devices, or artificial vision systems as infrared detection / communication receiving units. They have shown great application prospects in new energy, microelectronics, artificial intelligence, healthcare, and other fields. However, traditional InGaAs detectors mostly use rigid substrates (such as Chinese patent documents with publication numbers CN114551618A and CN116247124A), which cannot meet the flexibility and bendability requirements of modern electronic devices. A current hot topic in flexible electronics research is to thin-film semiconductor devices and prepare high-performance flexible chips. Therefore, incorporating InGaAs detectors that cover the 400-1700nm band into flexible devices can maximize the application value of InGaAs detectors.

[0004] Typical photodetectors only convert the intensity of the photoelectric output signal, leaving other electromagnetic parameters such as frequency, phase, and polarization state unresolved. A metasurface is an array of subwavelength structures that can control the amplitude, phase, frequency, and polarization state of light. When combined with a photodetector, a metasurface can enhance the interaction between light and matter at the pixel level, and also enable detector pixels to resolve more electromagnetic parameters. Polarization can provide another type of information about an object that is different from the intensity of the radiation. Different objects or different states of the same object may produce different polarization states when emitting or reflecting infrared radiation, and the polarization state of some objects is closely related to the wavelength. By detecting the polarization signal in the imaging scene, it is possible to extract richer target object information, thereby improving image contrast and enhancing target detection and recognition capabilities.

[0005] Hyperspectral imaging combines imaging technology with spectral analysis. Compared to traditional imaging techniques, hyperspectral imaging can capture more information about the composition and properties of materials. It can be used not only for material identification and classification but also in a variety of fields, including environmental monitoring, mineral exploration, quality control, waste management, and agriculture.

[0006] With a series of breakthroughs in photoelectric detection technology, the market has also placed higher demands on the performance and usage scenarios of detectors. Traditional photoelectric detectors mainly rely on light intensity information for imaging. Focusing on improving performance parameters such as array size, sensitivity and resolution is no longer able to cope with future development needs such as diversified targets, complex environments and diversified tasks. The acquisition of multi-dimensional light information provides a new way to improve detector performance. In addition to intensity information, other information such as wavelength, momentum, polarization and phase of light can be obtained through infrared photoelectric detectors. In order to meet the increasingly complex needs of photoelectric detection, it is particularly important to develop a flexible InGaAs detector that integrates multiple functions. This detector can not only provide richer detection dimensions, but also maintain high performance in various extreme and changing environments, opening up new possibilities for future photoelectric detection technology. Summary of the Invention

[0007] The present invention provides a flexible multi-dimensional InGaAs focal plane detector, which can not only realize visible-shortwave infrared wide spectrum detection, but also has higher-dimensional polarization detection and hyperspectral detection capabilities, while having good flexibility and bendability to adapt to the needs of different application scenarios.

[0008] The specific technical solutions adopted are as follows:

[0009] A flexible multi-dimensional InGaAs focal plane detector, comprising a polymer flexible substrate and at least one detector unit; the detector unit is located on the light incident side of the polymer flexible substrate;

[0010] Along the direction away from the polymer flexible substrate, the detector unit structure includes an InGaAs absorption layer, an InGaAs / InAlAs transition layer, an InAlAs Schottky barrier enhancement layer, a dielectric layer and a metasurface structure layer arranged in sequence;

[0011] The dielectric layer plays the role of isolation and anti-reflection, and the dielectric layer material includes SiO2, Al2O3, TiO2, HfO2 or Si3N4;

[0012] The material of the metasurface structure layer is a metal material or an optical medium material (silicon material, calcium fluoride, magnesium fluoride, etc.), and is prepared by electron beam exposure technology or photolithography technology.

[0013] Specifically, the material of the polymer flexible substrate includes but is not limited to polyimide (PI), polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), etc., preferably polyimide (PI).

[0014] The thickness of the InGaAs absorption layer is 10-2000nm, the thickness of the InGaAs / InAlAs transition layer is 10-50nm, the thickness of the InAlAs Schottky barrier enhancement layer is 10-100nm, the thickness of the dielectric layer is 50-300nm, and the thickness of the super surface structure layer is 50-500nm.

[0015] Preferably, the thickness of the InGaAs absorption layer is 145 nm, the thickness of the InGaAs / InAlAs transition layer is 20 nm, and the thickness of the InAlAs Schottky barrier enhancement layer is 40 nm.

[0016] Specifically, the InGaAs / InAlAs transition layer is composed of at least one periodic transition unit. Along the direction away from the polymer flexible substrate, each transition unit sequentially includes an InGaAs superlattice layer and an InAlAs superlattice layer lattice-matched to the InGaAs superlattice layer.

[0017] Preferably, the InGaAs / InAlAs transition layer is composed of m periodic transition units, where m is a natural number, 2≤m≤10. Along the direction away from the polymer flexible substrate, each transition unit sequentially grows a layer of InGaAs superlattice layer and an InAlAs superlattice layer lattice-matched to the InGaAs superlattice layer; the total thickness d of the InGaAs / InAlAs transition layer ranges from 10nm≤d≤50nm; the thickness a1 of the single-layer InGaAs superlattice layer and the thickness a2 of the InAlAs superlattice layer lattice-matched to the InGaAs superlattice layer in each transition unit range from 0.5nm≤a1<5nm and 0.5nm≤a2<5nm; along the direction away from the polymer flexible substrate, the thickness of the InGaAs superlattice layer in the transition unit gradually decreases, and the thickness of the InAlAs superlattice layer gradually increases.

[0018] Furthermore, the flexible multidimensional InGaAs focal plane detector also includes an electrode and a polymer encapsulation layer; the electrode and the dielectric layer are both covered on the InAlAs Schottky barrier enhancement layer, the dielectric layer is located in the central area of ​​the InAlAs Schottky barrier enhancement layer, and the electrode is located in the edge area of ​​the InAlAs Schottky barrier enhancement layer; the material of the polymer encapsulation layer includes SU-8 photoresist, PMMA (polymethyl methacrylate), NR9 photoresist or PDMS (polydimethylsiloxane) and the like.

[0019] The present invention also provides a method for preparing the flexible multi-dimensional InGaAs focal plane detector, comprising the following steps:

[0020] (1) spin coating a polymer flexible substrate on a substrate, and spin coating an adhesive on the polymer flexible substrate;

[0021] (2) preparing a chip comprising an InP substrate and an auxiliary layer epitaxial thereon, an InAlAs Schottky barrier enhancement layer, an InGaAs / InAlAs transition layer, an InGaAs absorption layer, and an InP cap layer, and bonding the chip after removing the InP cap layer upside down to an adhesive so that the InGaAs absorption layer on the chip is in direct contact with the adhesive;

[0022] (3) etching and removing the auxiliary layer and the InP substrate of the device after bonding in step (2), exposing the InAlAs Schottky barrier enhancement layer, and etching to obtain the basic array of detector units;

[0023] (4) preparing a metal electrode and depositing a dielectric layer on the InAlAs Schottky barrier enhancement layer of the device in step (3), and then preparing a super surface structure layer on the dielectric layer;

[0024] (5) The device of step (4) is encapsulated using a polymer, a metal electrode window is left during the encapsulation process, and the substrate is removed to prepare the flexible multi-dimensional InGaAs focal plane detector.

[0025] Preferably, in step (1), the coating thickness of the adhesive is 0.5-3.5 μm, and the adhesive is preferably SU-8 photoresist.

[0026] Specifically, the chip structure includes an InP substrate, an InP buffer layer, an InGaAs etch stop layer, an InP sacrificial layer, an InAlAs Schottky barrier enhancement layer, an InGaAs / InAlAs transition layer, an InGaAs absorption layer and an InP cap layer, which are arranged in sequence from bottom to top; after the InP cap layer is etched away, it is invertedly bonded to an adhesive.

[0027] Preferably, in step (3), the auxiliary layer and the InP substrate are etched away by wet chemical etching, the auxiliary layer including the InP buffer layer, the InGaAs etch stop layer and the InP sacrificial layer, and different etching solutions are used to etch away the InP substrate, the InP buffer layer, the InGaAs etch stop layer and the InP sacrificial layer respectively.

[0028] Preferably, in step (4), the metal electrode materials are titanium Ti and gold Au, which are prepared by electron beam evaporation, with titanium serving as the adhesion layer and gold serving as the electrode layer.

[0029] Further preferably, the thickness of the deposited Ti / Au electrode is 5 nm Ti / 100 nm Au; the deposition of the Ti / Au electrode is performed twice to form a common electrode for detectors between rows and columns, and the cross positions are separated by SU-8 photoresist.

[0030] Optionally, the dielectric layer is deposited by electron beam evaporation, chemical vapor deposition, magnetron sputtering, etc., preferably electron beam evaporation.

[0031] Optionally, a metal or optical medium layer is deposited on the medium layer, and a super-surface structure pattern is exposed on the metal or optical medium layer using electron beam exposure or ultraviolet lithography, and then dry etching is performed after development to obtain a super-surface structure layer; or, a super-surface structure pattern is exposed on the medium layer using electron beam exposure or ultraviolet lithography, and then a metal or optical medium layer is deposited after development, and then peeled off to obtain a super-surface structure layer.

[0032] Optionally, the method for removing the substrate is etching or stripping. The etching method is to use hydrofluoric acid (HF) solution to etch (such as etching the SiO2 layer on the surface of the silicon wafer) to make the flexible multi-dimensional InGaAs focal plane detector fall off. The stripping method is to first create a gap between the substrate and other parts of the device, and then place it in deionized water, and use the surface tension of water to peel the flexible multi-dimensional InGaAs focal plane detector from the substrate.

[0033] Preferably, the substrate is removed by a stripping method, which is more environmentally friendly and safe, and avoids the use of HF and a large number of cleaning steps after acid treatment, thus simplifying the process and having a success rate of up to 100%.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] (1) The method of the present invention removes the auxiliary layer and InP substrate of the chip by etching, so that its spectral response range covers 400-1700nm, realizing visible-shortwave infrared integrated detection, and improving the applicability of the focal plane detector; by setting the metasurface structure layer, the interaction between light and matter at the pixel level is enhanced, and the focal plane detector pixels can also solve more electromagnetic parameters such as amplitude, phase, frequency and polarization, realizing high-dimensional photoelectric detection; and the focal plane detector has good flexibility and bendability, and can form a deformable and multi-angle receiving detector unit according to the platform shape, functional characteristics, and incident light characteristics, providing protection for information relay and meeting the needs of communication and sensing in complex environments.

[0036] (2) The present invention integrates polarization detection, hyperspectral imaging and wide-spectrum response functions, realizes the multi-dimensional detection function of the focal plane detector, and improves its application value.

[0037] (3) The focal plane detector can be produced using the standard batch manufacturing process of the semiconductor chip industry. A single exposure mask is sufficient to integrate multiple functions in a focal plane detector (different metasurface structures realize different functions). In addition, the preparation process of the focal plane detector of the present invention is simple, low-cost, and easy to mass-produce and promote. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 Schematic diagram of the cross-sectional layered structure of a flexible multi-dimensional InGaAs focal plane detector.

[0039] Figure 2 Schematic diagram of the InGaAs chip structure.

[0040] Figure 3 This is a scanning electron microscope image of the 16×16InGaAs focal plane detector of the present invention.

[0041] Figure 4 Scanning electron microscope images of two typical metasurface structure layers.

[0042] Figure 5 This is a planar wide-spectrum imaging diagram of the flexible multi-dimensional InGaAs focal plane detector of the present invention.

[0043] Figure 6 This is a curved wide-spectrum imaging diagram of the flexible multi-dimensional InGaAs focal plane detector of the present invention.

[0044] Figure 7 This is a schematic diagram of the metasurface structure of the flexible multi-dimensional InGaAs focal plane detector of the present invention and a simulation diagram of the polarization detection performance achieved thereby.

[0045] Figure 8 This is a schematic diagram of the metasurface structure of the flexible multi-dimensional InGaAs focal plane detector of the present invention and a simulation diagram of the hyperspectral detection performance achieved thereby. DETAILED DESCRIPTION

[0046] The present invention will be further illustrated below in conjunction with the examples and accompanying drawings. It should be understood that these examples are intended to illustrate the present invention only and are not intended to limit the scope of the invention. The operating methods in the following examples where specific conditions are not specified are generally based on conventional conditions or the conditions recommended by the manufacturer. Contents not described in detail in this specification sheet belong to the prior art known to those skilled in the art. The experimental materials used in the following examples, unless otherwise specified, can be purchased from conventional biochemical reagent companies.

[0047] Example 1

[0048] In this embodiment, the structure of the flexible multi-dimensional InGaAs focal plane detector includes a polymer flexible substrate and at least one detector unit; the detector unit is located on the light incident side of the polymer flexible substrate; along the direction away from the polymer flexible substrate, the detector unit structure includes an InGaAs absorption layer, an InGaAs / InAlAs transition layer, an InAlAs Schottky barrier enhancement layer, a dielectric layer and a metasurface structure layer arranged in sequence; the flexible multi-dimensional InGaAs focal plane detector also includes an electrode and a polymer packaging layer, and the electrode and the dielectric layer are both covered on the InAlAs Schottky barrier enhancement layer, the dielectric layer is located in the central area on the InAlAs Schottky barrier enhancement layer, and the electrode is located in the edge area on the InAlAs Schottky barrier enhancement layer. The cross-sectional schematic diagram of the flexible multi-dimensional InGaAs focal plane detector is shown in FIG. Figure 1 shown.

[0049] The preparation method of the flexible multi-dimensional InGaAs focal plane detector specifically includes the following steps:

[0050] S100: Spin-coating a polyimide (PI) film on a 500nm SiO2 wafer (substrate) as a polymer flexible substrate;

[0051] S200: Spin-coating the adhesive SU-8 2002 on the PI film substrate; the thickness of the adhesive is about 1.5 μm;

[0052] S300: preparing a chip, the structure of the chip including an InP substrate (350 μm), an InP buffer layer (500 nm), an InGaAs etch stop layer (200 nm), an InP sacrificial layer (50 nm), an InAlAs Schottky barrier enhancement layer (40 nm), an InGaAs / InAlAs transition layer (20 nm), an InGaAs absorption layer (145 nm), and an InP cap layer (50 nm) arranged in sequence from bottom to top; after removing the InP cap layer by wet chemical etching (a mixed solution of H3PO4:HCl=7:3), the chip is inverted and bonded to an adhesive so that the InGaAs absorption layer on the chip is in direct contact with the adhesive. The specific structure of the chip is as follows: Figure 2 As shown, the InGaAs / InAlAs transition layer includes, from bottom to top, an InAlAs superlattice layer (4 nm), an InGaAs superlattice layer (1 nm), an InAlAs superlattice layer (3 nm), an InGaAs superlattice layer (2 nm), an InAlAs superlattice layer (2 nm), an InGaAs superlattice layer (3 nm), an InAlAs superlattice layer (1 nm), and an InGaAs superlattice layer (4 nm).

[0053] Specifically, the chip structure is prepared by epitaxial growth. All layers are epitaxially grown on a semi-insulating InP substrate, lattice-matched with the InP substrate and without doping. 0.53 Ga 0.47 As and InAlAs:In 0.52 Al 0.48 The exact composition of As.

[0054] S400: wet chemical etching is used to remove the InP substrate, InP buffer layer, InGaAs etch stop layer and InP sacrificial layer. The etching of the InP substrate and the InP buffer layer uses a mixed solution of HCl:H2O=3:1, and the etching of the InGaAs etch stop layer uses a mixed solution of H2SO4:H2O2:H2O=1:1:18. The removal of the InP sacrificial layer uses a mixed solution of HCl:H3PO4:CH3COOH=1:1:2 to expose the InAlAs Schottky barrier enhancement layer.

[0055] S500: Photolithography and wet etching are used to form the basic array of detector units: The detector unit mesa shape is exposed using contact photolithography. The InGaAs absorption layer, InGaAs / InAlAs transition layer, and InAlAs Schottky barrier enhancement layer are non-selectively wet-etched for 1 minute using a mixture of H2SO4:H2O2:H2O = 1:1:20. The detector mesas are etched down to the SU-8 bonding layer, forming the basic array of detector units. Each detector unit mesa measures approximately 90μm x 60μm.

[0056] S600: 5nm Ti / 100nm Au electrodes are deposited on the InAlAs Schottky barrier enhancement layer of the device obtained in S500. Two coplanar Schottky contact electrodes are defined on each detector unit. In addition, to reduce the total chip area, detectors in the same row and column share electrodes. Therefore, the metal deposition is performed in two steps. After the first metal deposition, a layer of SU-8 2000.5 is spin-coated to encapsulate the first layer of metal electrodes and expose the window for the second layer of electrodes. The resulting 16×16 device array is shown in the figure. Figure 3 shown.

[0057] S700: Electron beam evaporation of a 120nm SiO2 dielectric layer on the detector surface. The SiO2 dielectric layer is used to isolate the detector and the metasurface structure.

[0058] S800: Electron beam exposure is used to expose the metasurface structure pattern on the dielectric layer. After development, the metal Al is evaporated by electron beam and peeled off to obtain the metasurface structure layer. The typical microstructures of the two metasurface structure layers are as follows: Figure 4 shown.

[0059] S900: Use SU-8 to package the device made by S800. During the packaging process, a metal electrode window is left by photolithography, and then a circle of cracks around the back of SiO2 is removed to expose a gap between the flexible multi-dimensional InGaAs focal plane detector and the substrate. The device is then placed in deionized water, peeled off by the surface tension of water, the SiO2 substrate is removed, and PI tape is affixed to its back to prepare the flexible multi-dimensional InGaAs focal plane detector. The flexible multi-dimensional InGaAs focal plane detector is packaged on a circuit board for subsequent testing.

[0060] Sample analysis

[0061] Under different wavelengths of incident light, the pattern was projected onto the detector surface and the photocurrent was tested. This shows that the flexible multi-dimensional InGaAs focal plane detector can achieve planar wide spectrum imaging in the range of 400nm to 1700nm. Figure 5 shown.

[0062] In addition to being able to be packaged on a planar structure (such as a circuit board, etc.), the flexible multi-dimensional InGaAs focal plane detector can also be packaged on a curved surface structure, and can form a deformable detection unit according to the shape of the platform.

[0063] Under different wavelengths of incident light, the pattern was projected onto the curved detector surface and the photocurrent was tested. This shows that the flexible multi-dimensional InGaAs focal plane detector can achieve curved surface wide spectrum imaging in the range of 400nm to 1700nm. Figure 6 shown.

[0064] like Figure 7 and Figure 8 As shown, the flexible multi-dimensional InGaAs focal plane detector obtained in Example 1 can realize polarization detection and hyperspectral detection simulation ( Figure 7 and Figure 8 The InGaAs / InAlAs transition layer is omitted in both examples).

[0065] The embodiments described above provide a detailed description of the technical solutions of the present invention. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, supplements or similar substitutions made within the scope of the principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A flexible multi-dimensional InGaAs focal plane detector, characterized in that: The structure includes a polymer flexible substrate and at least one detector unit; the detector unit is located on the light incident side of the polymer flexible substrate; Along the direction away from the polymer flexible substrate, the detector unit structure includes an InGaAs absorption layer, an InGaAs / InAlAs transition layer, an InAlAs Schottky barrier enhancement layer, a dielectric layer and a metasurface structure layer arranged in sequence; The dielectric layer material includes SiO2, Al2O3, TiO2, HfO2 or Si3N4; The material of the metasurface structure layer is a metal material or an optical medium material.

2. The flexible multi-dimensional InGaAs focal plane detector according to claim 1, characterized in that: Materials of the polymer flexible substrate include polyimide, polydimethylsiloxane, polyethylene terephthalate, polyethylene naphthalate or polycarbonate.

3. The flexible multi-dimensional InGaAs focal plane detector according to claim 1, characterized in that: The thickness of the InGaAs absorption layer is 10-2000nm, the thickness of the InGaAs / InAlAs transition layer is 10-50nm, the thickness of the InAlAs Schottky barrier enhancement layer is 10-100nm, the thickness of the dielectric layer is 50-300nm, and the thickness of the super surface structure layer is 50-500nm.

4. The flexible multi-dimensional InGaAs focal plane detector according to claim 1, characterized in that: The InGaAs / InAlAs transition layer is composed of at least one periodic transition unit. Along the direction away from the polymer flexible substrate, each transition unit sequentially comprises an InGaAs superlattice layer and an InAlAs superlattice layer lattice-matched to the InGaAs superlattice layer.

5. The flexible multi-dimensional InGaAs focal plane detector according to claim 1, characterized in that: The flexible multi-dimensional InGaAs focal plane detector further includes electrodes and a polymer packaging layer.

6. The method for preparing a flexible multi-dimensional InGaAs focal plane detector according to any one of claims 1 to 5, characterized in that: The following steps are involved: (1) spin coating a polymer flexible substrate on a substrate, and spin coating an adhesive on the polymer flexible substrate; (2) preparing a chip comprising an InP substrate and an auxiliary layer epitaxial thereon, an InAlAs Schottky barrier enhancement layer, an InGaAs / InAlAs transition layer, an InGaAs absorption layer, and an InP cap layer, and bonding the chip after removing the InP cap layer to an adhesive so that the InGaAs absorption layer on the chip is in direct contact with the adhesive; (3) etching and removing the auxiliary layer and the InP substrate of the device after bonding in step (2), exposing the InAlAs Schottky barrier enhancement layer, and etching to obtain the basic array of detector units; (4) preparing a metal electrode and depositing a dielectric layer on the InAlAs Schottky barrier enhancement layer of the device in step (3), and then preparing a super surface structure layer on the dielectric layer; (5) The device of step (4) is encapsulated using a polymer, a metal electrode window is left during the encapsulation process, and the substrate is removed to prepare the flexible multi-dimensional InGaAs focal plane detector.

7. The method for preparing a flexible multi-dimensional InGaAs focal plane detector according to claim 6, characterized in that: The chip structure includes an InP substrate, an InP buffer layer, an InGaAs etch stop layer, an InP sacrificial layer, an InAlAs Schottky barrier enhancement layer, an InGaAs / InAlAs transition layer, an InGaAs absorption layer and an InP cap layer, which are arranged in sequence from bottom to top; After etching away the InP cap layer, it is invertedly bonded to the adhesive.

8. The method for preparing a flexible multi-dimensional InGaAs focal plane detector according to claim 6, characterized in that: The method for depositing the dielectric layer is electron beam evaporation, chemical vapor deposition or magnetron sputtering.

9. The method for preparing a flexible multi-dimensional InGaAs focal plane detector according to claim 6, characterized in that: Depositing a metal or optical medium layer on the medium layer, exposing a metasurface structure pattern on the metal or optical medium layer by electron beam exposure or ultraviolet lithography, and dry etching after development to obtain a metasurface structure layer; Alternatively, the metasurface structure pattern is exposed on the dielectric layer by electron beam exposure or ultraviolet lithography, and a metal or optical dielectric layer is deposited after development, and then peeled off to obtain the metasurface structure layer.

10. The method for preparing a flexible multi-dimensional InGaAs focal plane detector according to claim 6, characterized in that: The method for removing the substrate is etching or stripping.

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