Solar cell structure and preparation method thereof

Abstract

The invention discloses a solar cell structure and a preparation method thereof, and relates to the technical field of solar photovoltaic power generation devices. The solar cell structure comprises a glass substrate and a plurality of sub-cell units arranged on the substrate. A P1 channel, a P2 channel and a P3 channel are arranged between the units, and the edge of the P2 channel is provided with a slide type passivation channel and a metal layer. The slide type passivation channel is precisely deposited through capillary self-assembly to form an inverted trapezoidal structure, mutual diffusion of the light absorption layer and metal ions is prevented, and water and oxygen are prevented from entering perovskite. And meanwhile, the metal layer can effectively increase the charge extraction and transmission speed and improve the efficiency of the battery. The preparation method is unique in structure and suitable for large-scale production of solar cell modules.

Description

Technical Field

[0001] The present invention relates to the technical field of solar photovoltaic power generation devices, and in particular to a solar cell structure and a preparation method thereof. Background Art

[0002] In recent years, metal halide perovskite materials have shown excellent optoelectronic properties, such as high absorption coefficient, long carrier lifetime, and high photogenerated carrier mobility. Since 2009, the efficiency of single-cell perovskite solar cells has rapidly climbed from 3.8% to 26.7%, driven by technological advancements. Although the photoelectric conversion efficiency of perovskite solar cells has approached the theoretical limit, stability issues remain a major obstacle to their commercialization. Perovskite materials are extremely sensitive to environmental factors such as temperature, humidity, and oxygen, which can cause the perovskite crystal structure to decompose, thereby reducing cell performance.

[0003] In existing perovskite solar cells, a large number of dangling bonds or defects exist on the surface and grain boundaries of the perovskite film. These defects exacerbate the movement of halide ions, which in turn corrode the metal electrode material. For example, MAPbI3 generates PbI2, MA, and HI during thermal decomposition. MA and HI may escape from the perovskite surface, leaving iodide vacancies. At higher temperatures, iodide has higher energy, allowing it to diffuse faster from the perovskite film to surface vacancies and volatilize, resulting in decreased cell performance.

[0004] Currently, to address the issue of ion migration caused by the reaction between perovskites and metals, methods such as low-dimensional perovskite coating, gas passivation, dense protective layer modification, and inert material protection are commonly used to passivate defects and maintain the stoichiometric ratio of the perovskite components. However, these methods mainly prevent the decomposition of components in the vertical direction and are unable to inhibit lateral ion migration. The P2 laser-etched region (P2 channel) of the perovskite component is the channel directly connecting the top electrode and the perovskite component. It is more susceptible to decomposition than other locations. The decomposition products can then diffuse laterally to adjacent components, causing further decomposition and affecting their stability. Therefore, precise passivation of the P2 channel is extremely important.

[0005] In addition, other new types of solar cells, such as organic solar cells or silicon / perovskite tandem cells, can also experience decomposition and denaturation of the photoactive layer at higher operating temperatures, seriously impacting the stability and service life of the solar cell. Summary of the Invention

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a new solar cell structure and a preparation method thereof, aiming to add a slide-type passivation layer and a metal layer to the P2 channel of the solar cell module, which can not only quickly transmit the photoelectrons generated by the light absorption layer and improve the efficiency of the battery, but also inhibit the contact and diffusion of the light absorption layer with the electrode and water and oxygen in the environment, so as to improve the stability of the battery module.

[0007] The technical solutions of the present invention are as follows:

[0008] In the first aspect, the present invention provides a solar cell structure, characterized in that the solar cell is composed of a plurality of sub-battery units connected in series, wherein the sub-battery units include a stacked lower electrode layer, a hole transport layer, a light absorption layer, an electron transport layer, a hole blocking layer, a top electrode layer, and a packaging material; wherein the edges of the P2 channels between the units are provided with a sliding passivation layer and a metal layer, and the edges of the light absorption layer in the clear edge area around the entire battery assembly are provided with a sliding passivation layer.

[0009] Furthermore, the material used in the slide-type passivation layer is made of a mixture of an ion blocking material and a photoluminescent material, wherein the ion blocking material includes but is not limited to one or more of polydimethylsiloxane, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, thermoplastic silicone rubber, ethylene methacrylic acid copolymer, silica gel, tetrafluoroethylene copolymer, polyvinylidene fluoride, polyethylene terephthalate, polylactic acid, polyamide, polymethyl methacrylate, graphene and its derivatives; the photoluminescent material includes but is not limited to one or more of MEH-PPV, polyaniline, PFO; one or more of europium-doped alumina, zinc sulfide, and gallium nitride inorganic light-emitting materials; one or more of UiO-66, MOF-5, and ZIF-8 metal organic framework materials; and one or more of PTZ-TPA and DPA-TPA thermally active delayed fluorescence materials.

[0010] Furthermore, the solution formed by the material used in the slide-type passivation layer has a viscosity range of 0.5 to 1.5 mPa·s and a tension range of 10 to 40 mN / m. The solution penetrates longitudinally to the top of the P2 channel edge through capillary action, with a penetration height of 500 to 700 nm, and laterally penetrates into the light absorption layer, with a penetration distance of 10 to 100 nm. Through capillary action, the passivation material can passivate defects at the lateral and longitudinal grain boundaries of the perovskite, reducing non-radiative recombination and effectively preventing reactions between the perovskite active layer and the metal layer in the P2 channel, thereby improving the stability of the battery assembly.

[0011] Furthermore, in perovskites, the P2 channel is 500-700nm. When the tension is 15mN / s, to ensure that the penetration height can cover the P2 channel, a viscosity range of 0.5 mPa·s to 1.5 mPa·s and a tension range of 10-40mN / m are required. In addition to affecting the penetration height, viscosity and surface tension also have a significant impact on the film formation process and micro-nanoprinting technology. For the film formation process, lower viscosity helps to form a more uniform coating, while higher viscosity may lead to uneven coating. Surface tension affects the wettability of the coating and the formation of droplets during the drying process. Higher surface tension may lead to defects on the coating surface, such as cavities and pinholes. In micro-nanoprinting technology, viscosity affects ink fluidity and transfer efficiency during the printing process. Lower viscosity facilitates smooth ink transfer on the printing press, reducing the risk of ink blockage and line breakage, while higher viscosity can lead to uneven ink transfer, affecting print quality. Lower surface tension helps ink droplets spread evenly on the substrate, improving print resolution. Higher surface tension can cause uneven ink droplet spread, forming satellite droplets or uneven printing. Therefore, to control film quality and the printing process, it is necessary to rationally control the viscosity, tension, and other properties of the solution.

[0012] Furthermore, the slide-type passivation layer is made of a mixture of ion blocking material and photoluminescent material. Its purpose is to prevent the metal layer and the light absorption layer from penetrating and diffusing into each other, which may cause the light absorption layer to decompose. At the same time, it makes full use of the "dead zone" so that the ineffective area can emit light of the corresponding spectrum of the light absorption layer by itself, thereby increasing the light utilization rate.

[0013] Furthermore, the slide-type passivation layer is formed by a glue injection method, a 3D printing method, a solution method, or a screen printing method, and then a slide-type passivation layer is formed by laser etching. The power of the laser is in the range of 0.75W to 15W, and the pulse width is between 0.2 and 1.2ms.

[0014] Furthermore, the P2 channel has an inverted trapezoidal structure, narrow at the bottom and wide at the top. The top width of the P2 channel is 40-100μm, and the bottom width is 20-40μm. The inverted trapezoidal structure of the P2 channel provides a wider contact area at the top, which helps increase the range of capillary forces and makes it easier for the passivation material to penetrate the top of the channel. Because the sidewalls of the inverted trapezoidal structure have a certain tilt angle, this helps the solution adhere and spread on the sidewalls, which can enhance the adhesion of the ion blocking material and photoluminescent material to the substrate and the inner side of the P2 channel, improving the filling effect.

[0015] Furthermore, the width of the metal layer is 1 μm to 10 μm; the material used for the metal layer includes but is not limited to gold, silver, copper, aluminum, bismuth, and tin oxide.

[0016] Further, the solar cell structure is characterized in that the series connection means that the low electrode layer of each sub-cell unit is serially connected to the top electrode layer of an adjacent sub-cell unit through a slide-type passivation layer and a metal layer.

[0017] Further, a slide-type passivation layer is provided at the edge of the light absorption layer in the edge cleaning area around the battery structure, effectively blocking water molecules, oxygen, and other corrosive substances in the external environment from invading the battery module, protecting the battery materials from environmental factors, and extending the service life of the battery.

[0018] Further, the thickness of the light absorption layer is 20 to 1000 nm; the light absorption layer includes one or more of CH3NH3PbI3-xBrx, CH3NH3PbCl3-xBrx (0 < x < 3), (CH3NH3)1-x(HC(NH2)2)xPbI3, CH3NH3PbxSn1-xI3 (0 < x < 1) perovskite materials, and (R-NH3)2(CH3NH3)x-1BxM3x+1 two-dimensional perovskite organic-inorganic composite material systems; one or more of PTB7-Th:ITIC, PM6:Y6, D18:BTIC-BO-4Cl bulk heterojunction systems; organic / perovskite and silicon / perovskite tandem cells formed by the above materials.

[0019] Further, the thickness of the low electrode layer is 300 to 1200 nm; the materials are ITO, FTO, and other transparent conductive oxides.

[0020] Further, the thickness of the hole transport layer is 20 to 50 nm; the hole transport layer includes one or more of Spiro-OMeTAD, NiOx, P3HT, CuSCN; the thickness of the electron transport layer is 10 to 60 nm, and the electron transport layer includes, but is not limited to, one or more of ZnO, TiO2, PC61BM; the thickness of the hole blocking layer is 2 to 10 nm, and the hole blocking layer includes, but is not limited to, one or more of BCP, SnO2.

[0021] Further, the thickness of the top electrode layer is 100 to 200 nm; the top electrode layer includes one or more of gold, silver, and copper.

[0022] Further, the inverted solar cell module includes any one of a perovskite solar cell module, an organic semiconductor solar cell module, a silicon / perovskite tandem cell, a perovskite / perovskite tandem cell, and an organic / perovskite tandem cell.

[0023] In a second aspect, the method for preparing the inverted solar cell module includes the steps:

[0024] A. Pre-treatment of glass substrate: including cleaning, UV-O treatment, etc.

[0025] B. Depositing at least one bottom electrode on the substrate with a thickness of 300-1200 nm and made of ITO or FTO;

[0026] C. P1 is etched on the bottom electrode by laser etching, and the electrode layer is divided into several parts of the same width, with an etching line width of 20-120μm;

[0027] D. preparing a hole transport layer with a thickness of 10-50 nm on the bottom electrode region by spin coating, printing, magnetron sputtering or evaporation, and then annealing at a certain temperature;

[0028] E. Prepare a light absorption layer on the hole transport layer. If the light absorption layer is made of perovskite material, a perovskite light absorption layer with a thickness of 200-1000 nm is prepared by slit coating, blade coating, anti-solvent spin coating, etc., and then annealed at a certain temperature. If the light absorption layer is made of organic semiconductor material, a donor-acceptor active layer is prepared by spin coating, ALD, evaporation, etc.; if the light absorption layer is a silicon-perovskite stack, a perovskite thin film layer is prepared on an existing crystalline silicon cell according to the production process.

[0029] F. preparing an electron transport layer on the light absorbing layer by spin coating, printing, magnetron sputtering or evaporation, with a thickness of 10-60 nm;

[0030] G. preparing a hole blocking layer with a thickness of 2-10 nm on the electron transport layer by spin coating, printing, magnetron sputtering or evaporation;

[0031] H. etching P2 on the hole blocking layer using a laser etching method to etch open the hole blocking layer, the electron transport layer, the light absorption layer, and the hole transport layer to expose the bottom electrode with a line width of 100-300 μm;

[0032] I. Apply a slide-like passivation layer to the P2 channel. Prepare a solution of insulating material, fluorescent material, and photoinitiator and inject it into the micro-nanoprinter. Then, control the liquid output rate to 20 μL / min, maintain a 1 mm height between the print head and the solar cell module, and move the print head at a speed of 2 mm / s. The material is printed in the P2 channel to form a passivation layer.

[0033] J. etching the passivation layer by laser etching to expose the bottom electrode with a line width of 60-100 μm;

[0034] K. Fill the passivation layer trenches with a metal layer. Inject metal ink into the micro-nano printer at a rate of 20 μL / min, maintain a 1 mm height between the print head and the solar cell module, and move the print head at a speed of 10 mm / s. Print the metal ink into the passivation layer trenches to form a metal layer.

[0035] L. forming a 200 nm thick electrode as a top electrode on the hole blocking layer by magnetron sputtering or evaporation;

[0036] M. Etching the top electrode by laser etching to form an isolation region P3 with a line width of 60-100 μm; and using a laser to clean the edges of the non-working area around the component to form a clean edge region;

[0037] N. Coating the passivation material of the slide passivation layer on the edge-clearing area. Finally, a complete solar cell module is obtained;

[0038] O. Encapsulating the solar cell assembly.

[0039] Working principle: The present invention provides a solar cell module and a preparation method thereof. A slide-type passivation layer is added to the solar cell module using a simple and mature printing process to slow down the ion exchange rate between the light absorption layer and the metal electrode in the "dead zone", thereby extending the service life of the module. At the same time, fluorescent materials are added to prevent the light irradiated in the "dead zone" from being wasted and can be reused. Finally, a metal layer is added to accelerate the electron transmission rate between the sub-cells of the series-connected module, ultimately obtaining a high-efficiency and stable solar cell module.

[0040] Compared with the prior art, the present invention has the following beneficial effects:

[0041] 1. The slide-type passivation layer of the present invention is simple to prepare and can be processed by solution. In contrast, the traditional low-dimensional perovskite layer modified 3D perovskite passivation method is significantly affected by the synthesis conditions (such as temperature, solvent, and reaction time). The dimensional non-uniformity may lead to inconsistency and poor repeatability of device performance, which is more difficult to control in large-area preparation. The advantage of this technology is that a simple and mature printing process is used to add a slide-type passivation layer to the solar cell module, which slows down the ion exchange rate between the light absorption layer and the metal electrode in the "dead zone", thereby extending the service life of the module without considering dimensional control.

[0042] 2. Compared with traditional gas passivation, such as the use of NH3, HF, and silane gases, the slide-type passivation layer of the present invention has a pungent odor or is highly corrosive and prone to gas leakage. The passivation material or photoluminescent material used in this technology is not easy to volatilize, has low toxicity, and is relatively safe. Compared with the traditional method of treating perovskite components with ozone, in addition to generating lead oxides at the P2 channel interface, it also causes oxidation at other locations on the perovskite surface, which may have an adverse effect on the perovskite battery. However, this technology uses an inkjet printing method to precisely control the printing position and fill the passivation material into the P2 channel without affecting other locations, thereby reducing side reactions that may have a negative impact on battery performance.

[0043] 3. The slide-type passivation layer of the present invention significantly optimizes the penetration height and spreading performance under capillary action by finely controlling the viscosity and surface tension of the solution used, ensuring uniform filling and film quality of the passivation layer within the P2 channel. This precise control enables the slide-type passivation layer to closely adhere to the edge of the light absorption layer, effectively improving the passivation layer's coverage and thus enhancing the overall performance of the battery module.

[0044] 4. Fluorescent materials are added to the slide-type passivation layer of the present invention so that the light irradiated in the "dead zone" is not wasted and can be reused. Finally, a metal layer is added to accelerate the electron transmission rate between the sub-cells of the series-connected assembly, ultimately obtaining a high-efficiency and stable solar cell assembly.

[0045] 5. The slide-type passivation layer of the present invention provides a new technical solution for the field of solar cells, and is particularly suitable for the preparation of large-area solar cell modules with high performance and high stability.

[0046] 6. The solar cell preparation technology of the present invention is also applicable to other new solar cells, such as organic solar cells, silicon / perovskite tandem cells, perovskite / perovskite tandem cells, and organic / perovskite tandem cells. The preparation method has a unique structure and the preparation process can be solution-processed, which has guiding significance for the industrial preparation and commercialization of large-area solar cell modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The accompanying drawings are provided to provide a further understanding of the present invention and are used together with the following embodiments to explain the present invention, but do not constitute a limitation of the present invention. In the accompanying drawings:

[0048] Figure 1 This is a schematic structural diagram of a reverse tandem solar cell module according to the present invention;

[0049] Figure 1Middle: glass substrate 1, bottom electrode 2, hole transport layer 3, light absorption layer 4, metal layer 5, slide passivation layer 6, electron transport layer and hole blocking layer 7, top electrode 8, encapsulation glue 9, P1 channel, P2 channel, P3 channel;

[0050] Figure 2 is an overall schematic diagram of a solar cell assembly of the present invention;

[0051] Figure 3 Schematic diagram of the capillary trapezoidal structure

[0052] Figure 4 The relationship between capillary penetration height and surface tension and viscosity;

[0053] Figure 5 The effect of surface tension of general organic solution on concentration;

[0054] Figure 6 A comparison chart of thermal stability of a solar cell provided by an embodiment of the present invention;

[0055] Figure 7 A comparison chart of the photoelectric conversion efficiency of solar cells provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0056] To make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0057] In a first aspect, the present invention provides a solar cell structure, such as Figure 1 As shown, the characteristic is that the solar cell is composed of a number of sub-battery units connected in series, and the sub-battery units include a stacked lower electrode layer, a hole transport layer, a light absorption layer, an electron transport layer, a hole blocking layer, a top electrode layer, and a packaging material; wherein, the edges of the P2 channels between the units are provided with a slide passivation layer and a metal layer, and the edges of the light absorption layer in the clear edge area around the entire battery assembly are provided with a slide passivation layer. Figure 2 This is a schematic diagram of the overall structure of the solar cell module of the present invention, which includes an effective area responsible for photoelectric conversion, a dead area that does not directly participate in the conversion but improves light utilization through special design, a clear edge area that protects the edge of the module, and edge electrodes that realize connection between sub-battery units.

[0058] The material used in the slide-type passivation layer is made of a mixture of an ion blocking material and a photoluminescent material. The ion blocking material includes but is not limited to polydimethylsiloxane, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, thermoplastic silicone rubber, ethylene methacrylic acid copolymer, silica gel, tetrafluoroethylene copolymer, polyvinylidene fluoride, polyethylene terephthalate, polylactic acid, polyamide, polymethyl methacrylate, graphene and its derivatives. One or more of the photoluminescent material includes but is not limited to MEH-PPV. , polyaniline, PFO; one or more of europium-doped alumina, zinc sulfide, gallium nitride inorganic light-emitting materials; one or more of UiO-66, MOF-5, ZIF-8 metal organic framework materials; one or more of PTZ-TPA, DPA-TPA thermally active delayed fluorescence materials; the solvent used in the passivation layer includes one or more of hexane, cyclohexane, chlorobenzene, tetrahydrofuran, tetramethyl sulfoxide, propylene carbonate, ethyl acetate non-polar solvents, the solvent has low solubility for perovskite materials, but high solubility for the ion blocking material and the photoluminescent material, preventing excessive dissolution of the perovskite material during the preparation process, while ensuring effective dissolution and penetration of the passivation layer material, thereby achieving effective passivation of the perovskite grain boundary.

[0059] The solution formed by the material used in the slide-type passivation layer has a viscosity range of 0.5 to 1.5 mPa·s and a tension range of 10 to 40 mN / m. The solution penetrates longitudinally to the top of the P2 channel edge through capillary action, with a penetration height of 500 to 700 nm, and laterally penetrates into the light absorption layer, with a penetration distance of 10 to 100 nm. Through capillary action, the passivation material can passivate defects at the lateral and longitudinal grain boundaries of the perovskite, reducing non-radiative recombination and effectively preventing reactions between the perovskite active layer and the metal layer in the P2 channel, thereby improving the stability of the battery assembly.

[0060] The slide-type passivation layer is made of a mixture of ion blocking material and photoluminescent material. Its purpose is to prevent the metal layer and the light absorption layer from penetrating and diffusing each other, which may cause the light absorption layer to decompose. At the same time, it makes full use of the "dead zone" so that the ineffective area can emit light of the corresponding spectrum of the light absorption layer, thereby increasing the light utilization rate.

[0061] The slide-type passivation layer is manufactured by forming the passivation layer through a glue injection method, a 3D printing method, a solution method, or a screen printing method, and then forming the slide-type passivation layer by laser etching. The power of the laser is in the range of 0.75W to 15W, and the pulse width is between 0.2 and 1.2ms.

[0062] The multi-step structure of the slide-type passivation channel is designed as an inverted trapezoid, with a bottom width of 0.1 to 30 μm and a top width of 30 to 100 μm. The inverted trapezoid provides a wider contact area at the top, which helps increase the range of capillary forces and makes it easier for the passivation material to penetrate the top of the channel. The angles α and β between the horizontal plane of the bottom edge and the hypotenuse of the inverted trapezoid range from 45 degrees to 90 degrees.

[0063] like Figure 3 As shown, the capillary shape of the present invention is a trapezoidal column. Under the condition of ignoring the gravity of the curved liquid surface, the maximum height of the capillary action can be calculated based on the formula for calculating the tension based on mechanical balance and curve integral:

[0064] The geometric relationship shows that the length of the top side of the trapezoid c

[0065]

[0066] Where a is the length of the base of the trapezoid, h is the maximum height of capillary action, α and β are the angle between a horizontal plane and the hypotenuse and another angle (inclination angle of the oblique plane), respectively.

[0067] The volume V of a trapezoidal cylinder is:

[0068]

[0069] The corresponding gravity F gravity :

[0070]

[0071] Where ρ is the volume of the liquid and g is the acceleration due to gravity;

[0072] When the surface tension acts on the boundary of a trapezoidal capillary, the magnitude of the tension is obtained by integrating the curve:

[0073]

[0074] Where b is the length of the trapezoidal cylinder, θ is the contact angle, and γ is the tension coefficient;

[0075] The gravity and surface tension of the liquid reach equilibrium:

[0076]

[0077] Right now:

[0078]

[0079] Simplifying, we get:

[0080]

[0081] To solve the equation, define the following coefficients:

[0082]

[0083]

[0084]

[0085] These coefficients together determine the effect of capillary action, where coefficient A is the effect of volume change caused by gravity on height, coefficient B reflects the height change caused by the combined effects of gravity and tension when the liquid rises, and coefficient C reflects the initial height change caused by surface tension when the liquid rises.

[0086] According to the equation, when the base a of the trapezoidal column is 10μm, the length b is 30cm, the contact angle θ is 60°, the angles α and β between the horizontal plane of the trapezoidal base and the hypotenuse are both 65°, the liquid density is 1.5g / cm3, and the liquid tension coefficient is 40mN / m, the maximum capillary rise height is 2.41mm, which clearly meets the P2 channel depth under normal circumstances. To improve the passivation effect, the inclination angle of the inclined surface needs to be set between 45° and 90°. The channel sidewalls of the inverted trapezoidal structure have a certain inclination angle, which helps the solution adhere to and spread on the sidewalls, thereby enhancing the adhesion of the ion blocking material and photoluminescent material to the substrate and the inner side of the P2 channel, improving the filling effect.

[0087] The slide-type passivation channel forms a multi-step structure through capillary self-assembly, with the number of steps being no less than two. The top spacing of the steps is 40 to 100 μm, and the bottom spacing is 20 to 40 μm, to optimize the charge transfer path and reduce charge recombination.

[0088] The slide-type passivation channel of the multi-step structure is formed by depositing the slide-type passivation material through capillary self-assembly. The capillary action penetrates longitudinally to the top of the edge of the P2 channel with a penetration height of 500 to 700 nm, and at the same time penetrates laterally to the light absorption layer with a penetration distance of 10 to 100 nm, so as to achieve effective passivation of the light absorption layer.

[0089] For typical Newtonian fluids, the standard model for describing nanoscale capillary imbibition dynamics is the Lucas-Washburn (LW) relation. LW assumes that gravity and evaporation effects are negligible during capillary action. The capillary force is balanced only by the viscous force:

[0090]

[0091] Where, γ is the liquid surface tension coefficient; θ is the contact angle; R is the average pore radius; η is the fluid viscosity; t is the time; and h is the capillary penetration height.

[0092] The equation shows that solutions with high surface tension, low viscosity, and low contact angles have higher penetration heights in capillaries. In perovskite solar cells, commonly used solvents have good wettability, so the effect of viscosity on penetration height is the primary consideration. Figure 4 The relationship between capillary penetration height, surface tension, and viscosity is shown for a radius R of 10 nm, an exposure time t of 5e-6 s, and a contact angle θ of 30°. Acetonitrile has a viscosity of 0.325 mPa·s at 30°C. Using the formula, the penetration height is calculated to be 437.08 nm when the tension coefficient is 15 mN / m.

[0093] In perovskites, the P2 channel is 500-700nm. When the tension coefficient is 15mN / s, to ensure that the penetration height can cover the P2 channel, a viscosity range of 0.5 mPa·s to 1.5 mPa·s and a tension coefficient range of 10-40mN / m are required. In addition to affecting the penetration height, viscosity and surface tension also have a significant impact on the film formation process and micro-nanoprinting technology. For the film formation process, lower viscosity helps form a more uniform coating, while higher viscosity may lead to uneven coating. Surface tension affects the wettability of the coating and the formation of droplets during the drying process. Higher surface tension may lead to defects on the coating surface, such as cavities and pinholes. In micro-nanoprinting technology, viscosity affects ink fluidity and transfer efficiency during the printing process. Lower viscosity facilitates smooth ink transfer on the printing press, reducing the risk of ink blockage and line breakage, while higher viscosity can lead to uneven ink transfer, affecting print quality. Lower surface tension helps ink droplets spread evenly on the substrate, improving print resolution. Higher surface tension can cause uneven ink droplet spread, forming satellite droplets or uneven printing. Therefore, to control film quality and the printing process, it is necessary to rationally control the viscosity, tension, and other properties of the solution.

[0094] The surface tension of a solution is related to the concentration, temperature, etc. The Szyszkowski formula describes the relationship between the surface tension and concentration of a non-polar or general solvent at low concentrations:

[0095]

[0096] Where σ is the surface tension of the solution with a concentration of c, σ0 is the surface tension value when the solution concentration is 0, that is, the surface tension value of water, R is the gas constant, T represents the temperature, and Γ ∞ The saturated adsorption capacity of the solute on the surface of the solution, K represents the Langmuir constant, and c is the concentration of the solution. From the formula, it can be concluded that the tension decreases with increasing concentration and temperature. Figure 5 The figure shows the effect of concentration on the surface tension of a general organic solution. The higher the concentration, the lower the surface tension.

[0097] The Arrhenius formula can be used to approximately describe the viscosity change of a liquid:

[0098]

[0099] In the formula, η is the viscosity of the liquid, η0 represents the viscosity at the reference temperature, E is the activation energy, R is the gas constant, and T is the absolute temperature. Usually, the increase in temperature causes an increase in the kinetic energy of liquid molecules, an increase in the molecular spacing, and a decrease in the internal friction resistance, thus reducing the viscosity. Therefore, by adjusting the concentration and temperature of the solution, the properties such as the viscosity and tension of the slide-type passivation layer solution can be adjusted to control the film formation quality and the printing process.

[0100] The width of the metal layer is 1 μm to 10 μm; the materials used for the metal layer include, but are not limited to, gold, silver, copper, aluminum, bismuth, and tin oxide.

[0101] The solar cell structure is characterized in that the series connection means that the low electrode layer of each sub-cell unit is connected in series with the top electrode layer of the adjacent sub-cell unit through the slide-type passivation layer and the metal layer.

[0102] A slide-type passivation layer is provided at the edge of the light absorption layer in the clear edge area around the battery structure.

[0103] The thickness of the light absorption layer is 20 to 1000 nm; the light absorption layer includes one or more of CH3NH3PbI3-xBrx, CH3NH3PbCl3-xBrx (0 < x < 3), (CH3NH3)1-x(HC(NH2)2)xPbI3, CH3NH3PbxSn1-xI3 (0 < x < 1) perovskite materials, and (R-NH3)2(CH3NH3)x-1BxM3x+1 two-dimensional perovskite organic-inorganic composite material systems; one or more of PTB7-Th:ITIC, PM6:Y6, D18:BTIC-BO-4Cl bulk heterojunction systems; organic / perovskite and silicon / perovskite stacked cells formed by the above materials.

[0104] The thickness of the low electrode layer is 300 to 1200 nm; the materials are ITO, FTO, and other transparent conductive oxides.

[0105] The thickness of the hole transport layer is 20 to 50 nm; the hole transport layer includes one or more of Spiro-OMeTAD, NiOx, P3HT, and CuSCN; the thickness of the electron transport layer is 10 to 60 nm, and the electron transport layer includes but is not limited to one or more of ZnO, TiO2, and PC61BM; the thickness of the hole blocking layer is 2 to 10 nm, and the hole blocking layer includes but is not limited to one or more of BCP and SnO2.

[0106] The thickness of the top electrode layer is 100 to 200 nm; the top electrode layer includes one or more of gold, silver, and copper.

[0107] The inverted solar cell module includes any one of a perovskite solar cell module, an organic semiconductor solar cell module, a silicon / perovskite stacked cell, a perovskite / perovskite stacked cell, and an organic / perovskite stacked cell.

[0108] In a second aspect, the method for preparing the inverted solar cell module comprises the steps of:

[0109] A. Pre-treatment of glass substrate: including cleaning, UV-O treatment, etc.

[0110] B. Depositing at least one bottom electrode on the substrate with a thickness of 300-1200 nm and made of ITO or FTO;

[0111] C. P1 is etched on the bottom electrode by laser etching, and the electrode layer is divided into several parts of the same width, with an etching line width of 20-120μm;

[0112] D. preparing a hole transport layer with a thickness of 10-50 nm on the bottom electrode region by spin coating, printing, magnetron sputtering or evaporation, and then annealing at a certain temperature;

[0113] E. Prepare a light absorption layer on the hole transport layer. If the light absorption layer is made of perovskite material, a perovskite light absorption layer with a thickness of 200-1000 nm is prepared by slit coating, blade coating, anti-solvent spin coating, etc., and then annealed at a certain temperature. If the light absorption layer is made of organic semiconductor material, a donor-acceptor active layer is prepared by spin coating, ALD, evaporation, etc.; if the light absorption layer is a silicon-perovskite stack, a perovskite thin film layer is prepared on an existing crystalline silicon cell according to the production process.

[0114] F. preparing an electron transport layer on the light absorbing layer by spin coating, printing, magnetron sputtering or evaporation, with a thickness of 10-60 nm;

[0115] G. preparing a hole blocking layer with a thickness of 2-10 nm on the electron transport layer by spin coating, printing, magnetron sputtering or evaporation;

[0116] H. etching P2 on the hole blocking layer using a laser etching method to etch open the hole blocking layer, the electron transport layer, the light absorption layer, and the hole transport layer to expose the bottom electrode with a line width of 100-300 μm;

[0117] I. Apply a slide-like passivation layer to the P2 channel. Prepare a solution of insulating material, fluorescent material, and photoinitiator and inject it into the micro-nanoprinter. Then, control the liquid output rate to 20 μL / min, maintain a 1 mm height between the print head and the solar cell module, and move the print head at a speed of 2 mm / s. The material is printed in the P2 channel to form a passivation layer.

[0118] J. etching the passivation layer by laser etching to expose the bottom electrode with a line width of 60-100 μm;

[0119] K. Fill the passivation layer trenches with a metal layer. Inject metal ink into the micro-nano printer at a rate of 20 μL / min, maintain a 1 mm height between the print head and the solar cell module, and move the print head at a speed of 10 mm / s. Print the metal ink into the passivation layer trenches to form a metal layer.

[0120] L. forming a 200 nm thick electrode as a top electrode on the hole blocking layer by magnetron sputtering or evaporation;

[0121] M. Etching the top electrode by laser etching to form an isolation region P3 with a line width of 60-100 μm; and using a laser to clean the edges of the non-working area around the component to form a clean edge region;

[0122] N. Coating the passivation material of the slide passivation layer on the edge-clearing area. Finally, a complete solar cell module is obtained;

[0123] O. Encapsulating the solar cell assembly.

[0124] Working principle: The present invention provides a solar cell module and a preparation method thereof. A slide-type passivation layer is added to the solar cell module using a simple and mature printing process to slow down the ion exchange rate between the light absorption layer and the metal electrode in the "dead zone", thereby extending the service life of the module. At the same time, fluorescent materials are added to prevent the light irradiated in the "dead zone" from being wasted and can be reused. Finally, a metal layer is added to accelerate the electron transmission rate between the sub-cells of the series-connected module, ultimately obtaining a high-efficiency and stable solar cell module.

[0125] The present invention will be further explained below through specific embodiments:

[0126] Example 1

[0127] An inverted solar cell structure, the preparation method of which is as follows:

[0128] Step 1: Wipe the glass substrate with the bottom electrode ITO clean with anhydrous ethanol, then wipe the surface with ITO dry with a dry dust-free cloth, and then place it in a UVO device for 20 minutes. Use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode ITO covering the substrate to etch P1;

[0129] Step 2: A layer of NiO was deposited on the bottom electrode ITO by magnetron sputtering to obtain a hole transport layer with a thickness of 20 nm, and then thermally annealed at 300° C. for 20 minutes;

[0130] Step 3: a perovskite thin film layer with a thickness of 500 nm is formed on the NiO layer by spin coating, blade coating or slit coating, and annealed at 130° C. for 15 minutes after molding;

[0131] Step 4: Deposit a layer of electron transport layer C60 on the perovskite light absorption layer by vacuum thermal evaporation method with a thickness of 55 nm;

[0132] Step 5: depositing a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) on the electron transport layer C60 by vacuum thermal evaporation.

[0133] Step 6: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0134] Step 7: Using a micro-nanoprinter, print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polymethyl methacrylate (PMMA), the fluorescent material MEH-PVV, and a photoinitiator. A 532nm laser is then used to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0135] Step 8: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0136] Step nine: using a vacuum evaporation method to cover the top hole blocking layer with a top copper electrode having a thickness of 200 nm.

[0137] Step 10: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0138] Figure 6 A comparison chart of the thermal stability of a solar cell provided by an embodiment of the present invention shows that after continuous high-temperature testing, the solar cell using a slide-type passivation layer exhibits superior thermal stability. Specifically, compared with traditional solar cells, the current and fill factor decay rates of the passivation layer cell at high temperatures are lower. This result is attributed to the effective carrier recombination suppression effect of the passivation layer and the optimized light utilization in the dead zone of the cell. These improvements enable the solar cell to maintain a high photoelectric conversion efficiency during long-term operation and temperature fluctuation environments, thereby improving the reliability and service life of the cell.

[0139] Figure 7 This is a comparison chart of the photoelectric conversion efficiency of a solar cell provided by an embodiment of the present invention. The solar cell prepared with a slide-type passivation layer has improved current and fill factor due to the passivation effect and light utilization in the dead zone.

[0140] Example 2

[0141] An inverted solar cell structure, the preparation method of which is as follows:

[0142] Step 1: Wipe the glass substrate with the bottom electrode FTO clean with anhydrous ethanol, then wipe the surface with FTO dry with a dry dust-free cloth, and then place it in a UVO device for 20 minutes. Use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode FTO covering the substrate to etch P1;

[0143] Step 2: Spin-coat a layer of PEDOT:PSS on the bottom electrode FTO to obtain a hole transport layer with a thickness of 20 nm.

[0144] Step 3: Prepare a 500 nm thick perovskite film on the PEDOT:PSS layer by spin coating, blade coating or slit coating, and anneal at 130°C for 15 minutes after molding.

[0145] Step 4: Deposit a layer of electron transport layer PCBM on the perovskite light absorption layer by vacuum thermal evaporation method with a thickness of 55 nm;

[0146] Step 5: depositing a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) on the electron transport layer PCBM by vacuum thermal evaporation.

[0147] Step 6: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0148] Step 7: Using a micro-nano printer, print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polyvinylidene fluoride (PVDF), the fluorescent material MEH-PVV, and a photoinitiator. A 532nm laser is then used to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0149] Step 8: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0150] Step nine: using a vacuum evaporation method to cover the top hole blocking layer with a top copper electrode having a thickness of 200 nm.

[0151] Step 10: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0152] Example 3

[0153] An inverted solar cell structure, the preparation method of which is as follows:

[0154] Step 1: Wipe the glass substrate with the bottom electrode FTO clean with anhydrous ethanol, then wipe the surface with FTO dry with a dry dust-free cloth, and then place it in a UVO device for 20 minutes. Use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode FTO covering the substrate to etch P1;

[0155] Step 2: Spin-coat a layer of PEDOT:PSS on the bottom electrode FTO to obtain a hole transport layer with a thickness of 20 nm.

[0156] Step 3: Prepare an active layer of PM6:Y6 with a thickness of 500 nm on the PEDOT:PSS layer by spin coating, blade coating or slit coating;

[0157] Step 4: Deposit a layer of electron transport layer PCBM on the active layer PM6:Y6 by vacuum thermal evaporation method with a thickness of 55 nm;

[0158] Step 5: depositing a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) on the electron transport layer PCBM by vacuum thermal evaporation.

[0159] Step 6: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0160] Step 7: Using a micro-nanoprinter, print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polyethylene terephthalate (PET), the fluorescent material polyaniline, and a photoinitiator. A 532nm laser is then used to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0161] Step 8: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0162] Step nine: using a vacuum evaporation method to cover the top hole blocking layer with a top copper electrode having a thickness of 200 nm.

[0163] Step 10: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0164] Example 4

[0165] An inverted solar cell structure, the preparation method of which is as follows:

[0166] Step 1: Wipe the glass substrate with the bottom electrode ITO clean with anhydrous ethanol, then wipe the surface with ITO dry with a dry dust-free cloth, and then place it in a UVO device for 20 minutes. Use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode ITO covering the substrate to etch P1;

[0167] Step 2: A layer of PEI-Zn was deposited on the bottom electrode ITO by spin coating to obtain an electron transport layer with a thickness of 20 nm;

[0168] Step 3: Prepare an active layer of PBDB-T-SF:IT-4F on the PEI-Zn layer by spin coating, blade coating or slit coating, with a thickness of 500 nm;

[0169] Step 4: Deposit a hole transport layer of MoO3 with a thickness of 55 nm on the active layer PBDB-T-SF:IT-4F by vacuum thermal evaporation.

[0170] Step 5: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0171] Step 6: Using a micro-nanoprinter, print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polyethylene terephthalate (PET), the fluorescent material polyaniline, and a photoinitiator. A 532nm laser is then used to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0172] Step 7: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0173] Step eight: using a vacuum evaporation method to cover the top electron transport layer with a top copper electrode with a thickness of 200 nm.

[0174] Step 9: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0175] Example 5

[0176] Step 1: Wipe the glass substrate with the bottom electrode FTO clean with anhydrous ethanol, then wipe the surface with FTO dry with a dry dust-free cloth, and then place it in a UVO device for 20 minutes. Use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode FTO covering the substrate to etch P1;

[0177] Step 2: Spin-coat a layer of PEDOT:PSS on the bottom electrode FTO to obtain a hole transport layer with a thickness of 20 nm.

[0178] Step 3: Prepare an active layer of PCBM & P3HT with a thickness of 500 nm on the PEDOT:PSS layer by spin coating, blade coating or ALD;

[0179] Step 4: Deposit an electron transport layer C on the active layer PCBM & P3HT by vacuum thermal evaporation. 60 , thickness is 55nm;

[0180] Step 5: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0181] Step 6: Use a micro-nano printer to print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polylactic acid (PLA), the fluorescent material polyaniline, and a photoinitiator. Then, use a 532nm laser to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0182] Step 7: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0183] Step eight: using a vacuum evaporation method to cover the top electron transport layer with a top copper electrode with a thickness of 200 nm.

[0184] Step 9: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0185] Example 6

[0186] Step 1: Wipe the crystalline silicon battery substrate with the ITO layer clean with anhydrous ethanol, then wipe the surface of the crystalline silicon substrate with the ITO layer dry with a dry dust-free cloth, and then place it in the UVO device for 20 minutes, and use a pulsed laser with a wavelength of 1064nm to etch the bottom electrode ITO covered on the substrate to etch P1;

[0187] Step 2: A layer of NiO is deposited on the crystalline silicon substrate using the ALD method to obtain a hole transport layer with a thickness of 20 nm;

[0188] Step 3: a perovskite thin film layer with a thickness of 500 nm is formed on the NiO layer by spin coating, blade coating or slit coating, and annealed at 130° C. for 15 minutes after molding;

[0189] Step 4: Deposit a layer of electron transport layer C60 on the perovskite light absorption layer by vacuum thermal evaporation method with a thickness of 55 nm;

[0190] Step 5: depositing a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) on the electron transport layer C60 by vacuum thermal evaporation.

[0191] Step 6: Use a laser with a wavelength of 532nm to etch the P2 channel to expose the bottom electrode and form a spacer with a line width of 100-300μm;

[0192] Step 7: Using a micro-nanoprinter, print the prepared slide-type passivation layer solution into the P2 channel. The solution contains polymethyl methacrylate (PMMA), the fluorescent material MEH-PVV, and a photoinitiator. A 532nm laser is then used to etch the slide-type passivation layer, exposing the bottom electrode with a line width of 60-100μm.

[0193] Step 8: Use a micro-nano printer to fill the metal layer in the passivation layer trench. Inject nano silver paste ink into the micro-nano printer and print the nano silver paste ink in the passivation layer trench to form a metal layer.

[0194] Step nine: using a vacuum evaporation method to cover the top hole blocking layer with a top copper electrode having a thickness of 200 nm.

[0195] Step 10: A 532nm laser is used to etch the P3 trench, disconnecting the copper electrode. Simultaneously, a 1064nm pulsed laser is used to clean the non-working area around the module, forming a cleaned-edge zone. The passivation material of the slide-type passivation layer is then applied to this cleaned-edge zone. Finally, a complete solar cell module is obtained.

[0196] In summary, the present invention provides a solar cell module structure and a method for preparing the same. Through an innovative slide-type passivation layer design, the stability and efficiency of the solar cell module are significantly improved. This structure not only effectively prevents the mutual diffusion of the light-absorbing layer and metal ions, but also blocks the intrusion of external water molecules and oxygen, thereby enhancing the cell's adaptability to environmental changes. The preparation method is simple and scalable, and is applicable to a variety of new solar cells, such as perovskite, organic, and silicon / perovskite stacked cells. The materials used are diverse and safe, with low production costs, providing strong support for the commercialization and sustainable development of solar cell technology.

[0197] It should be understood that the application of the present invention is not limited to the above examples. For those skilled in the art, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A solar cell structure, characterized in that The solar cell structure is composed of several sub-cell units connected in series, and the sub-cell units include a stacked lower electrode layer, a hole transport layer, a light absorption layer, an electron transport layer, a hole blocking layer, a top electrode layer, and an encapsulation material; wherein, the solar cell structure also includes a P1 channel, a P2 channel, and a P3 channel between the units, and a slide-type passivation channel and a metal layer are provided at the edge of the P2 channel, and the slide-type passivation channel is filled with a slide-type passivation material.

2. The solar cell structure according to claim 1, characterized in that: The slide-type passivation channel runs through the hole blocking layer, the electron transport layer, the light absorption layer and the hole transport layer; the edge of the P2 channel includes at least two slide-type passivation channels, at least one slide-type channel is arranged on the side close to the P1 channel and away from the P3 channel, and at least one slide-type channel is arranged on the side close to the P3 channel and away from the P1 channel.

3. The solar cell structure according to claim 1, characterized in that: The slide-type passivation channel forms a multi-step structure through capillary self-assembly, with the number of steps being no less than 2; the top spacing of the steps is 40 to 100 μm, and the bottom spacing is 20 to 40 μm.

4. The solar cell structure according to claim 1, characterized in that: The multi-step structure of the slide-type passivation channel is designed as an inverted trapezoid, the bottom width of the trapezoidal structure is 0.1 to 30 μm, and the top width is 30 to 100 μm; the angles α and β of the bottom horizontal plane and the hypotenuse of the inverted trapezoidal structure range from 45 degrees to 90 degrees.

5. The solar cell structure according to claim 1, characterized in that: The multi-step structured slide passivation channel is formed by depositing the slide passivation material through capillary self-assembly, and the capillary action penetrates longitudinally to the top of the P2 channel edge with a penetration height of 500 to 700 nm, and simultaneously penetrates laterally to the light absorption layer with a penetration distance of 10 to 100 nm.

6. A method for preparing a solar cell structure according to any one of claims 1 to 5, characterized in that: The preparation method comprises the following steps: A P1 channel is formed on the lower electrode layer by laser scribing, and the hole transport layer, light absorption layer, electron transport layer, and hole blocking layer are sequentially deposited on the lower electrode layer after the P1 channel is formed; Laser scribing is performed on the hole blocking layer, the electron transport layer, the light absorption layer and the hole transport layer to form a P2 channel; preparing a slide-type passivation channel in the P2 channel; Depositing a metal layer in the P2 channel; Depositing a top electrode layer above the metal layer and the hole blocking layer, and forming a P3 channel in the top electrode layer by laser scribing; forming a clean-edge region in a non-working area around the top electrode layer by laser scribing, and depositing the material for the slide-type passivation layer in the clean-edge region; The battery is packaged.

7. The method for preparing a solar cell structure according to claim 5, wherein: The preparation of the slide-type passivation channel comprises: The solution for preparing the slide-type passivation material has a viscosity ranging from 0.5 to 1.5 mPa·s and a tension ranging from 10 to 40 mN / m; Using micro-nano printing technology, by precisely controlling the movement trajectory and speed of the print head, the prepared solution is deposited into the designated P2 channel to form a preliminary structure of a slide-type passivation channel; By adjusting the printing pressure and the amount of solution extruded during the micro-nanoprinting process, the volume of solution deposited in the P2 channel is controlled, and the solution forms an inverted trapezoidal structure with a narrow bottom and a wide top in the P2 channel through capillary self-assembly. After printing is completed, further fixing the shape and size of the trapezoidal structure by at least one post-processing method such as thermal curing or ultraviolet curing; Laser etching is used to form a slide-type passivation channel on the trapezoidal structure. The power of the laser is in the range of 0.75W to 15W, and the pulse width is in the range of 0.2 to 1.2ms.

8. The solar cell structure according to claim 1, characterized in that: The width of the metal layer is 20 μm to 100 μm; the material used for the metal layer includes but is not limited to gold, silver, copper, aluminum, bismuth, and tin oxide.

9. The solar cell structure according to claim 1, characterized in that: A slide-type passivation layer is provided at the edge of the light absorption layer in the clear edge area around the solar cell structure.

10. The solar cell structure according to claim 1, characterized in that: The slide-type passivation material is made by mixing a passivation material and a photoluminescent material. The passivation material includes but is not limited to one or more of polydimethylsiloxane, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, thermoplastic silicone rubber, ethylene methacrylic acid copolymer, silica gel, tetrafluoroethylene copolymer, polyvinylidene fluoride, polyethylene terephthalate, polylactic acid, polyamide, polymethyl methacrylate, graphene and its derivatives; the photoluminescent material includes but is not limited to one or more of MEH-PPV, polyaniline, PFO; one or more of europium-doped alumina, zinc sulfide, and gallium nitride inorganic luminescent materials; one or more of UiO-66, MOF-5, and ZIF-8 metal-organic framework materials; one or more of PTZ-TPA and DPA-TPA thermally active delayed fluorescent materials; the solvent used in the slide-type passivation material includes one or more of hexane, cyclohexane, chlorobenzene, tetrahydrofuran, tetramethyl sulfoxide, propylene carbonate, and ethyl acetate non-polar solvents.

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