Coating system and production system

Abstract

The invention discloses a coating system and a production system. The coating system comprises an electron gun and an electric field generating device, wherein the electron gun is used for emitting incident electrons to a target material so as to form a film containing elements of the target material on a base material; the electric field generating device comprises a first electrode and a second electrode which are opposite in polarity, and a direct-current electric field is formed between the first electrode and the second electrode. Kinetic energy of the reflected electrons is reduced through the acting force of the direct-current electric field on the reflected electrons so as to reduce damage of the reflected electrons to the base material, and / or the moving direction of the reflected electrons is changed through the acting force of the direct-current electric field on the reflected electrons so that the reflected electrons can be gradually away from the base material, and therefore the number of the reflected electrons reaching the base material is reduced. Therefore, the ductility and tensile strength of the evaporated substrate are improved, and the ductility and tensile strength of the composite current collector are further improved.

Description

Technical Field

[0001] The present application relates to the technical field of electron beam evaporation, and in particular to a coating system and a production system. Background Art

[0002] Electron beam evaporation (EBEV) is widely used in many industries. For example, in the electronics industry, EBEV is used to manufacture capacitor films. In the lithium battery field, EBEV is used to prepare composite current collectors. Composite current collectors use a three-layer structure: metal-substrate-metal. This three-layer structure is created by depositing a nanoscale metal film on the surface of a substrate, such as a polymer substrate, using EBEV.

[0003] Specifically, in the electron beam evaporation process, an electron gun generates a high-energy electron beam to heat and evaporate the metal material into metal vapor, which then condenses on the surface of the substrate to form a thin film. However, researchers have found that the composite current collectors produced in this way suffer from problems such as reduced strength and easy fracture. Summary of the Invention

[0004] In view of the above problems, the present application provides a coating system and a production system to improve the ductility and tensile strength of the composite current collector, so as to enhance the mechanical properties of the composite current collector and improve the production yield.

[0005] In a first aspect, the present application provides a coating system, which includes an electron gun and an electric field generating device: the electron gun is used to emit incident electrons to a target material to form a film containing elements of the target material on a substrate; the electric field generating device includes a first electrode and a second electrode with opposite polarities, wherein a DC electric field is formed between the first electrode and the second electrode, and the DC electric field is used to reduce the kinetic energy of reflected electrons and / or reduce the number of reflected electrons reaching the substrate, wherein the reflected electrons are formed by the incident electrons being reflected by the target material.

[0006] It should be noted that when incident electrons bombard the target material, they are reflected by the target surface to form reflected electrons. The term "reflected electrons" is used broadly to include backscattered electrons, secondary electrons, and Auger electrons, with backscattered electrons having the highest energy. Because the kinetic energy of the incident electrons is extremely high, the kinetic energy of the reflected electrons is also high. High-energy reflected electrons bombarding the substrate surface may cause the substrate's molecular chains to break or change the crystalline properties of the molecular chains, resulting in poor ductility and low tensile strength of the substrate after vapor deposition.

[0007] Based on this, the present application applies a DC electric field to the reflected electrons to reduce their kinetic energy, thereby reducing damage to the substrate caused by the reflected electrons, thereby improving the ductility and tensile strength of the composite current collector. In addition, the present application also changes the direction of motion of the reflected electrons by applying a DC electric field to the reflected electrons, causing the reflected electrons to gradually move away from the substrate, thereby reducing the number of reflected electrons reaching the substrate, thereby improving the ductility and tensile strength of the composite current collector.

[0008] In some embodiments, the direction of the electric force exerted on the reflected electrons by the DC electric field is different from their direction of motion. If the electric force exerted on the reflected electrons is in the same direction as their motion, the reflected electrons will be accelerated by the electric force, increasing their kinetic energy. However, the direction of motion of the reflected electrons will not be shifted, and thus the reflected electrons will still damage the substrate.

[0009] In some embodiments, the electric force exerted on the reflected electrons by the DC electric field is directed opposite to their direction of motion. This decelerates the reflected electrons under the action of the electric force, reducing their kinetic energy. Furthermore, because the electric force exerted on the reflected electrons has no component perpendicular to their direction of motion, the electric force only serves to reduce their kinetic energy, rather than deflecting their direction of motion. This significantly reduces the kinetic energy of the reflected electrons.

[0010] In some embodiments, the direction of the electric field force applied to the reflected electrons is perpendicular to the direction of motion of the reflected electrons. The direction of motion of the reflected electrons is deflected by the electric field force, thereby causing the reflected electrons to move away from the substrate. Furthermore, since the electric field force applied to the reflected electrons does not contain a component in the direction opposite to the direction of motion of the reflected electrons, that is, the electric field force is entirely used to change the direction of motion of the reflected electrons, this embodiment can maximize the deflection angle of the reflected electrons, thereby causing the reflected electrons to move away from the substrate.

[0011] In some embodiments, the first electrode, the second electrode, and the target are arranged along the field intensity direction of the DC electric field, and vertical projections of the first electrode, the second electrode, and the target along the field intensity direction overlap.

[0012] It should be noted that the field strength direction of the present application is the direction of force on positive charges in the DC electric field. In other words, the field strength direction of the present application is the opposite direction of the electric field force on the reflected electrons.

[0013] As will be understood, since a DC electric field needs to be formed, the plates of the first and second electrodes need to face each other, meaning that their perpendicular projections along the field intensity direction overlap. Furthermore, the DC electric field formed between the electrodes needs to cover part or all of the target material so that reflected electrons are affected by the DC electric field during their movement. Consequently, the perpendicular projections of the first and second electrodes, along the field intensity direction, overlap.

[0014] In some embodiments, the vertical projections of the first electrode, the second electrode, and the target along the direction of the DC electric field are non-overlapping. It is understood that since a DC electric field needs to be formed, the first electrode and the second electrode need to have a facing portion, that is, the vertical projections of the first electrode and the second electrode along the direction of the field intensity overlap.

[0015] However, the vertical projection of the target along the direction of the DC electric field intensity may not overlap with the vertical projection of the electrode along the direction of the field intensity. For example, when the DC electric field intensity direction is parallel to the reflection surface, the reflection surface is a plane perpendicular to the incident surface, and the incident surface is the plane where the incident trajectory of the incident electron and the normal corresponding to the incidence lie.

[0016] Therefore, vertical projections of the first electrode, the second electrode, and the target along the field intensity direction of the DC electric field are non-overlapping.

[0017] In some embodiments, the first electrode is a positive electrode, and the first electrode is located between the second electrode and the target, or the target is located between the first electrode and the second electrode.

[0018] As can be understood, since the target material is generally a metal material such as aluminum, copper, stainless steel, titanium, or nickel, and metal atoms are not subject to electric field forces in a DC electric field, the target material can be placed between the first electrode and the second electrode, or the target material can be placed below the first electrode and the second electrode. Compared to the limitation of the plate space set by the target material between the electrodes, placing the target material below the first electrode and the second electrode can further shorten the distance between the two electrodes, thereby enhancing the electric field strength between the first electrode and the second electrode.

[0019] In some embodiments, a vertical projection of the incident electron trajectory on the reflective surface intersects the electrode overlap region at a point, wherein the electrode overlap region is an overlapping portion of the vertical projections of the first electrode and the second electrode on the reflective surface.

[0020] It should be noted that the reflection surface in the present application is a plane perpendicular to the incident surface, and the incident surface is the plane where the incident trajectory of the incident electron and the normal corresponding to the incident are located.

[0021] It can be understood that the vertical projection of the incident trajectory of the incident electron on the reflecting surface is a line segment. The starting point of this line segment is the vertical projection of the exit position of the incident electron when it is emitted from the electron gun on the reflecting surface, and the end point of this line segment is the vertical projection of the position where the incident electron bombards the target material on the reflecting surface.

[0022] Based on the technical solution in this embodiment, the vertical projection of the incident electron's trajectory on the reflective surface intersects the electrode overlap region at only one point. This intersection is the endpoint of the line segment. Therefore, the DC electric field covers the location where the incident electron bombards the target material. In other words, the DC electric field can change the kinetic energy and / or direction of motion of the reflected electron at the moment of its formation. In addition, there are no other intersections between this line segment and the electrode overlap region, that is, the DC electric field does not cover other locations during the incident electron's incidence process. Therefore, this technical solution can reduce the impact of the DC electric field on the incident electron's trajectory.

[0023] In some embodiments, each of the first and second electrodes includes at least one conductive layer. Therefore, the DC electric field strength can be adjusted by adjusting the number of conductive layers comprising the electrodes, thereby reducing the kinetic energy of reflected electrons and / or the number of reflected electrons reaching the substrate.

[0024] In some embodiments, the conductive layer is a conductive metal plate without a hollow region, or a conductive mesh including at least one hollow region.

[0025] When the first electrode is positioned between the substrate and the target, the rising metal vapor may condense and form a film on the surface of the first electrode, reducing the substrate coating efficiency. Therefore, the first electrode can be a conductive mesh with at least one hollow area to allow the metal vapor to pass through, ensuring substrate coating efficiency. Furthermore, since the second electrode is positioned so as not to hinder the rising metal vapor, it can be a conductive metal plate without a hollow area.

[0026] In some embodiments, each of the first electrode and the second electrode includes an insulating layer covering at least one conductive layer.

[0027] It should be noted that if the conductive layer is exposed to the air, it may come into contact with the outside world and leak electricity. In addition, if the conductive layer is connected to a ground wire or a grounding component, it may cause the conductive layer to lose charge, thereby reducing the electric field strength. Therefore, each electrode of the present application should be covered with an insulating layer to achieve ground insulation except for the position where it is used to connect to the power supply.

[0028] In some embodiments, the electric field generating device further includes: a transformer for converting an input voltage into a preset voltage to adjust the charge amount of the first electrode and the second electrode.

[0029] For example, the input side of the transformer is connected to a power source, and the output side of the transformer is connected to the first electrode and the second electrode respectively. Based on the technical solution of this example, the voltage output to the first electrode and the second electrode can be adjusted by the transformer, thereby adjusting the charge of the first electrode and the second electrode, and then changing the electric field strength of the DC electric field. Based on the technical solution of this embodiment, the kinetic energy and reflection angle of the reflected electrons can be adjusted.

[0030] In some embodiments, the electric field generating device further includes: an adjustable resistor for adjusting the charge amount of the first electrode and the second electrode by adjusting the resistance value.

[0031] Exemplarily, an adjustable resistor is connected to a power source, and two output terminals of the adjustable resistor are connected to a first electrode and a second electrode, respectively. Based on the technical solution of this example, the voltage output to the first and second electrodes can be adjusted by adjusting the resistance of the adjustable resistor, thereby adjusting the charge of the first and second electrodes, and thus changing the electric field strength of the DC electric field.

[0032] In a second aspect, the present application provides a production system comprising any coating system according to the first aspect. For example, the production system can be a composite current collector production line equipped with a coating system, or other production lines requiring an evaporation process.

[0033] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0035] Figure 1a This is a schematic structural diagram of a coating system according to some embodiments of the present application;

[0036] Figure 1b A schematic diagram of the electron reflection process in some embodiments of the present application;

[0037] Figure 2 Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0038] Figure 3 Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0039] Figure 4 Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0040] Figure 5a Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0041] Figure 5b Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0042] Figure 6a Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0043] Figure 6b Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0044] Figure 6c Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0045] Figure 6d Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0046] Figure 7 Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0047] Figure 8a Schematic diagram of electrode arrangement in some embodiments of the present application;

[0048] Figure 8b Schematic diagrams of electrode arrangements in some other embodiments of the present application;

[0049] Figure 8c Schematic diagrams of electrode arrangements in some other embodiments of the present application;

[0050] Figure 8d Schematic diagrams of electrode arrangements in some other embodiments of the present application;

[0051] Figure 9 Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0052] Figure 10 Schematic diagram of the electrode structure of some embodiments of the present application;

[0053] Figure 11 Schematic diagrams of electrode structures of some other embodiments of the present application;

[0054] Figure 12a Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0055] Figure 12b Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0056] Figure 13 Schematic diagram of the coating area in some embodiments of the present application;

[0057] Figure 14 This is a schematic structural diagram of an electric field generating device according to some embodiments of the present application;

[0058] Figure 15 Schematic diagram of the structure of the electric field generating device in some other embodiments of the present application;

[0059] Figure 16 Schematic diagram of the structure of the electric field generating device in some other embodiments of the present application;

[0060] Figure 17a Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0061] Figure 17b Schematic diagram of the structure of the coating system of some other embodiments of the present application;

[0062] Figure 18 This is a schematic structural diagram of a production system according to some embodiments of the present application. DETAILED DESCRIPTION

[0063] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0064] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0065] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0066] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0067] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0068] In the description of the embodiments of the present application, the term "plurality" refers to more than two (including two).

[0069] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0070] At present, electron beam evaporation technology is widely used in various production fields. Taking the lithium battery field as an example, the electron beam evaporation process can be used to evaporate copper film on the substrate to produce a current collector with higher energy density, lower cost and higher safety, also known as composite copper foil.

[0071] However, in the actual production process, the composite current collector often has problems such as reduced strength and easy breakage, resulting in a reduced yield rate and a very low process quality rate in the actual application of the composite current collector in the battery cell. After repeated experiments and analysis, technicians found that compared with the undeposited substrate, the tensile strength and elongation at break of the substrate will decrease after evaporation. For example, before and after the substrate is coated with 30nm of film, its tensile strength decreases from 220Mpa to 150Mpa, and the elongation at break of the substrate decreases from 100% to 45%, resulting in the frequent occurrence of substrate breakage in production.

[0072] To address the issue of poor tensile strength and ductility of the substrate after evaporation, technicians studied the changes in the physical properties of the substrate during the evaporation process and analyzed the causes, finding that:

[0073] When incident electrons fired from an electron gun strike the target, they generate backscattered electrons, secondary electrons, and Auger electrons. Because the incident electrons have extremely high kinetic energy, the reflected electrons also have high kinetic energy. For example, the kinetic energy of elastically scattered electrons in the backscattered electrons is almost identical to that of the incident electrons. These high-energy reflected electrons bombard the substrate surface, breaking the molecular chains or altering their crystalline properties. This results in poor ductility and low tensile strength in the deposited substrate.

[0074] Based on this, the present application provides a coating system to improve the elongation and tensile strength of the composite current collector. It should be noted that in actual production scenarios, the coating system in the present application can be an electron gun evaporator, an electron beam evaporation vacuum chamber, or other evaporation system. In addition, the possible application scenarios of the coating system in the present application include but are not limited to the preparation of composite current collectors, the manufacture of optical components, and the manufacture of wafers.

[0075] like Figure 1a As shown, the coating system 10 provided by the present application includes an electron gun 101, which is used to emit incident electrons q to a target material A to form a film containing elements of the target material A on a substrate B.

[0076] It should be noted that the electron gun 101 in this application can be a device that generates, accelerates, and focuses a high-energy-density electron beam. The target material A in this application is the raw material for making thin films, and the types of target material A include, but are not limited to, metals and alloys. The substrate B in this application includes, but is not limited to, flexible materials such as polypropylene, polyethylene terephthalate, polyethylene, and the like.

[0077] In practical applications, such as Figure 1a As shown, the electron gun 101 generates high-energy incident electrons q to bombard the target material A, generating a large amount of heat. The target material A evaporates under the heat to form vapor containing the target material A element. The vapor rises and condenses on the surface of the substrate B to form a film.

[0078] In addition, if Figure 1b As shown in the figure, an incident electron q strikes target A at position O along trajectory s0. It is then reflected by target A to form a reflected electron q', whose trajectory is s1. The plane containing the normal line nl corresponding to the trajectory s0 of the incident electron q and the incident trajectory is incident surface C1, and the plane perpendicular to incident surface C1 is reflection surface C2. Normal line nl is a straight line perpendicular to the reflection surface.

[0079] Please continue to see Figure 1a The coating system 10 provided in the present application further includes an electric field generating device 102 , and the electric field generating device 102 includes a first electrode 1021 and a second electrode 1022 with opposite polarities.

[0080] It should be noted that the electrode in this application refers to a conductive plate that accumulates electric charges. Figure 1a The arrangement positions of the first electrode 1021 and the second electrode 1022 are only one possible example. The first electrode 1021 being the positive electrode and the second electrode 1022 being the negative electrode are also only one possible example of opposite polarity. The opposite polarity also includes the first electrode 1021 being the negative electrode and the second electrode 1022 being the positive electrode. Figure 1a As shown, a DC electric field is formed between the first electrode 1021 and the second electrode 1022 ( Figure 1a (shown as a solid line with an arrow between the first electrode 1021 and the second electrode 1022). The DC electric field is an electric field formed by applying a DC voltage to the first electrode 1021 and the second electrode 1022. The DC electric field is used to reduce the kinetic energy of the reflected electrons q' and / or reduce the number of reflected electrons q' that reach the substrate B.

[0081] The field intensity direction E of the DC electric field is the force direction of the positive charge in the electric field, that is, the direction from the positive pole to the negative pole, and the direction remains unchanged. Those skilled in the art should know that the magnitude of the field intensity is related to the spacing between the two electrodes, the amount of charge carried by the two electrodes, the area facing the two electrodes, and the dielectric constant between the two electrodes. It is understandable that since the electric field can exert a force on the charges in the electric field, the DC electric field in this application can produce a force F with a constant direction on the reflected electron q', so as to consume the kinetic energy of the reflected electron q' and / or change the direction of motion of the reflected electron q'. The magnitude and direction of the field intensity can be set according to different usage requirements, as long as the kinetic energy of the reflected electron q' can be reduced and / or the number of reflected electrons q' reaching the substrate B can be reduced.

[0082] See also Figure 2 , when the first electrode 1021 and the second electrode 1022 are not energized, the reflected electron q' bombards the substrate B to form a motion trajectory s1. After the first electrode 1021 and the second electrode 1022 are energized, the first electrode 1021 is positively charged and the second electrode 1022 is negatively charged. The electric field force F on the reflected electron q' can be decomposed into a first component F1 and a second component F2 that are perpendicular to each other. Among them, the direction of the first component F1 is opposite to the movement direction v1 of the reflected electron q', so the first component F1 can consume the kinetic energy of the reflected electron q'. In addition, the direction of the second component F2 is perpendicular to the movement direction v1 of the reflected electron q', and the second component F2 is toward the side where the target material A is located, so the second component F2 can make the reflected electron q' move away from the substrate B to form a motion trajectory s2. It should be noted that the electric field force F refers to the force exerted by the DC electric field on the reflected electron q', and the movement direction v1 refers to the movement direction of the reflected electron q' when it is not affected by the DC electric field.

[0083] It is understandable that if the kinetic energy of the reflected electron q' decreases significantly, the reflected electron q' will not have enough kinetic energy to reach the substrate B, or the reflected electron q' will reach the substrate B but its kinetic energy will not cause serious damage to the molecular bonds of the substrate B. If the movement direction v1 of the reflected electron q' changes, its movement trajectory will gradually move away from the substrate B, and will not damage the molecular bonds of the substrate B. Therefore, the coating system 10 in the present application can improve the ductility and tensile strength of the substrate B after vapor deposition, and thus improve the ductility and tensile strength of the composite current collector.

[0084] The DC electric field in this application can be flexibly set according to different requirements, which is explained below with reference to an embodiment:

[0085] In some embodiments, the direction of the electric force F exerted on the reflected electron q' by the DC electric field is different from the moving direction v1 of the reflected electron q'.

[0086] See also Figure 3 ,and Figure 2 The difference is that when the electric field force F acting on the reflected electron q' is in the same direction as its motion direction v1, the reflected electron q' will accelerate. The reflected electron q' will have a higher kinetic energy than when no electric field is applied, and the direction v1 of the reflected electron q' will not be deflected. In this case, the reflected electron q' may cause more serious damage to the substrate B. Therefore, as long as the direction of the electric field force F acting on the reflected electron q' is different from the direction of its motion v1, it is sufficient to reduce the speed of the reflected electron q' and / or deflect the direction v1 of the reflected electron q'.

[0087] In some other embodiments, the direction of the electric force F exerted on the reflected electron q' by the DC electric field is opposite to the moving direction v1 of the reflected electron q'.

[0088] See also Figure 4 ,and Figure 2 The difference is that the electric force F on the reflected electron q' is in the opposite direction to the direction of motion v1 of the reflected electron q', and the electric force F does not have a component perpendicular to the direction of motion v1. In this case, the electric force F on the reflected electron q' serves to reduce the electron's kinetic energy, rather than deflecting the direction of motion v1 of the reflected electron q'. Therefore, compared to electric force F in other directions, the electric force F in the opposite direction to the direction of motion v1 of the reflected electron q' can reduce the kinetic energy of the reflected electron q' to the greatest extent.

[0089] In other embodiments, the direction of the electric field force F exerted on the reflected electron q' is perpendicular to the moving direction v1 of the reflected electron q'.

[0090] See also Figure 5a ,and Figure 2The difference is that the electric force F on the reflected electron q' is perpendicular to its motion direction v1, and there is no component of the force F in the direction opposite to v1. In this case, the electric force F is entirely used to change the motion direction v1 of the reflected electron q'. Under the influence of the electric force F, the reflected electron q' forms a trajectory s2, gradually moving away from the substrate B.

[0091] See also Figure 5b When the first and second electrodes 1021 and 1022 are de-energized, the reflected electron q' strikes the substrate B, forming a trajectory s1. When the first and second electrodes 1021 and 1022 are energized, the first electrode 1021 becomes positively charged, while the second electrode 1022 becomes negatively charged. The electric force F acting on the reflected electron q' is perpendicular to its direction of motion v1, and there is no component of the electric force F in the direction opposite to v1. In this case, the electric force F is entirely used to alter the direction of motion v1 of the reflected electron q'. Under the influence of the electric force F, the reflected electron q' forms a trajectory s2, gradually moving away from the substrate B.

[0092] Therefore, compared with the electric field force F in other directions, the electric field force F perpendicular to the moving direction v1 of the reflected electron q' can maximize the deflection angle of the reflected electron q', thereby causing the reflected electron q' to move away from the substrate B.

[0093] The arrangement positions of the first electrode 1021 and the second electrode 1022 can be flexibly set according to requirements, and are described below with reference to an embodiment:

[0094] In some embodiments, the first electrode 1021 , the second electrode 1022 , and the target A are arranged along the field intensity direction E of the DC electric field, and vertical projections of the first electrode 1021 , the second electrode 1022 , and the target A along the field intensity direction E overlap.

[0095] Since a DC electric field needs to be formed, the plates of the first electrode 1021 and the second electrode 1022 need to have facing portions, that is, the vertical projections of the first electrode 1021 and the second electrode 1022 along the field intensity direction E overlap.

[0096] In addition, the DC electric field needs to cover part or all of the target A so that the reflected electrons q' can be affected by the DC electric field during movement. Therefore, the vertical projections of the first electrode 1021, the second electrode 1022 and the target A along the field intensity direction E overlap.

[0097] Example 1: In Figure 2 See on the basis of Figure 6aThe first electrode 1021, the second electrode 1022, and the target A are arranged parallel to each other along the field intensity direction E of the DC electric field. The vertical projections of the first electrode 1021, the second electrode 1022, and the target A along the field intensity direction E overlap in a region D1. Part of the trajectory s1 of the reflected electron q' lies within the DC electric field, so the electric field can exert a force on the reflected electron q' within this region.

[0098] Example 2: See Figure 6b ,and Figure 6a The difference is that there is an overlapping area D1 among the vertical projections of the first electrode 1021, the second electrode 1022 and the target material A along the field intensity direction E, and part of the motion trajectory s1 of the reflected electron q' is located in the DC electric field, so the electric field can exert a force on the reflected electron q' located therein.

[0099] Example 3: See Figure 6c ,and Figure 6a The difference is that the first electrode 1021 and the second electrode 1022 are arranged in parallel, while the target A is not parallel to either electrode. The vertical projections of the first electrode 1021, the second electrode 1022, and the target A along the field intensity direction E overlap in a region D1. Part of the trajectory s1 of the reflected electron q' lies within the DC electric field, so the electric field exerts a force on the reflected electron q' within this region.

[0100] Example 4: See Figure 6d ,and Figure 6c The difference is that there is an overlapping area D1 among the vertical projections of the first electrode 1021, the second electrode 1022 and the target material A along the field intensity direction E, and part of the motion trajectory s1 of the reflected electron q' is located in the DC electric field, so the electric field can exert a force on the reflected electron q' located therein.

[0101] In some other embodiments, vertical projections of the first electrode 1021 , the second electrode 1022 , and the target A along the field intensity direction E of the DC electric field are non-overlapping.

[0102] Because a DC electric field needs to be formed, the first electrode 1021 and the second electrode 1022 need to have a facing portion, that is, the vertical projections of the first electrode 1021 and the second electrode 1022 along the field intensity direction E overlap. However, the vertical projection of the target A along the field intensity direction E of the DC electric field does not need to overlap with the vertical projection of the electrodes along the field intensity direction E.

[0103] See also Figure 7 ,and Figure 6aThe difference is that: there is an electrode overlapping area D2 between the vertical projections of the first electrode 1021 and the second electrode 1022 along the field intensity direction E, and the vertical projection of the target material along the field intensity direction E is D3. There is no overlapping part between the electrode overlapping area D2 and the vertical projection D3, but in this case, the motion trajectory s1 of the reflected electron q' still partially passes through the DC electric field, so the electric field can exert a force on the reflected electron q' located therein.

[0104] The first electrode 1021, the second electrode 1022, the target material A and the substrate can be arranged in various positions, which will be described below with reference to an embodiment.

[0105] In some embodiments, the first electrode 1021 is a positive electrode, and the first electrode 1021 is located between the second electrode 1022 and the target A, or the target A is located between the first electrode 1021 and the second electrode 1022 .

[0106] Since target material A is generally a metal material such as aluminum, copper, stainless steel, titanium, or nickel, and metal atoms are not affected by electric field forces in a DC electric field, target material A can be positioned between the first electrode 1021 and the second electrode 1022, or, alternatively, below the first electrode 1021 and the second electrode 1022 to reduce the impact of the grounded electrostatic shielding of the container containing target material A on the DC electric field. Furthermore, compared to the plate space restrictions imposed by positioning target material A between the two electrodes, positioning target material A below the first electrode 1021 and the second electrode 1022 can further shorten the distance between the two electrodes, thereby enhancing the electric field strength between the first electrode 1021 and the second electrode 1022.

[0107] See also Figure 8a , the first electrode 1021 is the positive electrode, the second electrode 1022 is the negative electrode, the target material A is located between the second electrode 1022 and the first electrode 1021, and the second electrode 1022 is located between the substrate B and the target material A; see Figure 8b ,and Figure 8a The difference is that the first electrode 1021 is located between the second electrode 1022 and the target A.

[0108] In other embodiments, the second electrode 1022 is a negative electrode, and the second electrode 1022 is located between the first electrode 1021 and the substrate B, or the substrate B is located between the second electrode 1022 and the first electrode 1021 .

[0109] Since substrate B is generally made of a material such as polypropylene, polyethylene terephthalate, or polyethylene, which is not affected by electric field forces in a DC electric field, substrate B can be disposed between the first electrode 1021 and the second electrode 1022, or substrate B can be disposed above the first electrode 1021 and the second electrode 1022 to reduce the impact of the grounded electrostatic shielding of substrate B on the DC electric field. In addition, compared to the limitation on the plate space caused by locating substrate B between the two electrodes, locating substrate B below the first electrode 1021 and the second electrode 1022 can further shorten the distance between the two electrodes, thereby enhancing the electric field strength between the first electrode 1021 and the second electrode 1022.

[0110] See also Figure 8c ,and Figure 8a The difference is that the substrate B is located between the second electrode 1022 and the first electrode 1021; see Figure 8d ,and Figure 8b The difference is that the substrate B is located between the second electrode 1022 and the first electrode 1021 .

[0111] In some embodiments, the vertical projection of the incident trajectory s0 of the incident electron q on the reflective surface C2 intersects with the electrode overlap area D4 at a point, wherein the electrode overlap area is the overlapping portion of the vertical projections of the first electrode 1021 and the second electrode 1022 on the reflective surface D2.

[0112] See also Figure 9 The vertical projection of the incident trajectory s0 of the incident electron q on the reflecting surface C2 is the line segment L1, the starting point O' of the line segment L1 is the vertical projection of the position where the incident electron q is emitted from the electron gun 101 on the reflecting surface C2, and the end point of the line segment L1 is the vertical projection of the position O where the incident electron q bombards the target material A on the reflecting surface C2; ​​the electrode plates of the first electrode 1021 and the second electrode 1022 have different shapes and areas, and the overlapping part of the vertical projections of the first electrode 1021 and the second electrode 1022 on the reflecting surface C2 is the electrode overlapping area D4.

[0113] As can be seen, if the vertical projection L of the incident trajectory of the incident electron q on the reflective surface intersects the electrode overlap region D4 at only one point, the DC electric field can cover the location where the incident electron q impacts the target material A, while not covering other locations during the incident process. Therefore, when the reflected electron q' is formed, the DC electric field in this embodiment can reduce the kinetic energy of the reflected electron q' and / or deflect the reflected electron q''s motion direction v1, and can also reduce the impact of the DC electric field on the incident trajectory s0 of the incident electron q.

[0114] The specific structures of the first electrode 1021 and the second electrode 1022 can be designed according to the requirements, and are described below with reference to an embodiment:

[0115] In some embodiments, each of the first electrode 1021 and the second electrode 1022 includes at least one conductive layer.

[0116] It should be noted that the material of the conductive layer in the present application can be metal or graphite, for example, the conductive layer material can be gold, silver, copper, aluminum, iron, etc.

[0117] Example 1: When copper is plated on substrate B, the melting point of copper is around 1000°C. The incident electron q energy is relatively high, and the energy of the reflected electron q' is concentrated in the range of 25 to 35 keV. If each of the first electrode 1021 and the second electrode 1022 is composed of a single conductive layer, the conductive layer needs to be input with a voltage of about 25 to 35 kV. Figure 10 As shown, each of the first electrode 1021 and the second electrode 1022 includes three conductive layers, and the voltage input to each conductive layer is approximately 9 kV to 12 kV.

[0118] Example 2: When aluminum is plated on substrate B, the melting point of aluminum is around 660°C. The required incident electron q energy is relatively low, and the energy of the reflected electron q' is concentrated in the range of 5 to 15 keV. If each of the first electrode 1021 and the second electrode 1022 is composed of a single conductive layer, the conductive layer needs to be input with a voltage of approximately 5 to 15 kV. Figure 10 As shown, each of the first electrode 1021 and the second electrode 1022 includes three conductive layers, and the voltage input to each conductive layer is approximately 2 kV to 5 kV.

[0119] Example 3: When substrate B is plated with organic materials such as perovskite, the melting point of the organic materials is low, the incident electron q energy is low, and the energy of the reflected electron q' is concentrated in the range of 1 to 5 keV. If each of the first electrode 1021 and the second electrode 1022 is composed of a single conductive layer, the electrodes need to input a voltage of about 1 to 5 kV. Figure 10 As shown, each of the first electrode 1021 and the second electrode 1022 includes three conductive layers, and the voltage input to each conductive layer is approximately 400V to 2000V.

[0120] It can be seen that this embodiment can adjust the number of conductive layers that make up the electrode according to the needs of the coating process and the output voltage of the electrode's power supply, so that the DC electric field reaches a suitable field strength; in addition, this embodiment superimposes the electric field through multiple conductive layers to achieve a higher field strength, which can reduce the demand for power supply equipment for electrode electricity consumption and facilitate selection.

[0121] In some embodiments, each of the first electrode 1021 and the second electrode 1022 includes an insulating layer covering at least one conductive layer.

[0122] It should be noted that if the conductive layer is exposed to the air, it may leak electricity when in contact with the outside world. In addition, if the conductive layer is connected to the ground wire or the grounding component, the conductive layer may lose charge, thereby causing the electric field strength to decrease. Therefore, an insulating layer needs to be wrapped around the conductive layer.

[0123] See also Figure 11 The electrode structure of first electrode 1021 is shown. First electrode 1021 includes conductive layers 10211, 10212, and 10213, an insulating layer 10214 covering the three conductive layers, and input terminals 10215, 10216, and 10217. Except for input terminals 10215-10217 for connecting to a power source, which do not require an insulating layer, the rest of the conductive layer should be covered with an insulating layer to provide insulation from ground. Second electrode 1022 is similar to first electrode 1021 and will not be described again.

[0124] The insulating layer 10214 in this embodiment can be made of high-temperature resistant ceramic materials, mica, aluminum oxide, silicon nitride, silicon carbide, aluminum silicate, silicon dioxide, etc.

[0125] In some embodiments, the conductive layer is a conductive metal plate without a hollow region, or a conductive mesh including at least one hollow region.

[0126] Example 1: See Figure 12a The first electrode 1021 is positively charged and the second electrode 1022 is negatively charged. Since the arrangement of the first electrode 1021 and the second electrode 1022 does not hinder the rising process of the metal vapor Q, the conductive layers of the first electrode 1021 and the second electrode 1022 can be conductive metal plates without hollow areas.

[0127] Example 2: See Figure 12b Arranged in sequence as shown, Figure 12a The difference is that if the conductive layers of the first electrode 1021 and the second electrode 1022 are conductive metal plates without hollow areas, the metal vapor Q will condense into a film on the surface of the first electrode 1021 and / or the second electrode 1022 during its rise, resulting in the metal vapor being unable to reach the surface of the substrate B. Therefore, if Figure 12b As shown, the first electrode 1021 and the second electrode 1022 can be a conductive grid including at least one hollow area, so that the metal vapor Q can pass through and form a film on the surface of the substrate B.

[0128] It should be noted that, in addition to Figure 12bThe first electrode 1021 and the second electrode 1022 each include four hollow regions, or may include only one hollow region. Furthermore, the first electrode 1021 and the second electrode 1022 may each include hollow regions of different sizes, numbers, and shapes, which is not limited in this application.

[0129] In some embodiments, the at least two hollow regions of the conductive layer are arranged sequentially along a preset moving direction of the substrate B.

[0130] See also Figure 12b as well as Figure 13 Initially, the solid portion of the conductive layer partially blocks the rise of metal vapor Q, resulting in coating of area D4 of substrate B while leaving area D5 uncoated. However, as substrate B moves along motion direction v2, and the hollowed-out areas are arranged sequentially along the predetermined motion direction v2 of substrate B, area D5 moves to the hollowed-out area facing the electrode, allowing metal vapor Q to reach area D5 of substrate B, thereby increasing the coating area. Therefore, the technical solution of this embodiment can increase the coating area of ​​substrate B while protecting substrate B.

[0131] In order to meet the power requirements of the first electrode 1021 and the second electrode 1022, the electric field generating device 102 further includes other components. The electric field generating device 102 of the present application is further described below in conjunction with embodiments:

[0132] In some embodiments, as Figure 14 As shown, the electric field generating device 102 includes, in addition to the first electrode 1021 and the second electrode 1022 , a transformer 1023 for converting an input voltage into a preset voltage to adjust the charge amount of the first electrode 1021 and the second electrode 1022 .

[0133] See also Figure 14 , the input side of transformer 1023 (such as Figure 14 The first electrode 1021 and the second electrode 1022 are connected to the power supply (indicated by the circle in the figure). The output side of the transformer 1023 is connected to the first electrode 1021 and the second electrode 1022, respectively. The power supply voltage is transformed by the transformer 1023 and output to the first electrode 1021 and the second electrode 1022. Therefore, by changing the transformation ratio of the transformer 1023, the amount of charge output to the first electrode 1021 and the second electrode 1022 can be adjusted, thereby changing the electric field strength of the DC electric field acting on the reflected electron q'.

[0134] In some embodiments, as Figure 15As shown, the electric field generating device 102 includes, in addition to the first electrode 1021 and the second electrode 1022 , an adjustable resistor 1024 for adjusting the charge of the first electrode 1021 and the second electrode 1022 by adjusting the resistance value.

[0135] Those skilled in the art should know that the adjustable resistor 1024 in this embodiment includes but is not limited to a sliding resistor, a resistance box, a potentiometer, and the like.

[0136] See also Figure 15 , the input side of the adjustable resistor 1024 (such as Figure 15 ) is used to connect to a power source, and the output side of the adjustable resistor 1024 is respectively connected to the first electrode 1021 and the second electrode 1022. In this embodiment, the voltage output to the first electrode 1021 and the second electrode 1022 can be adjusted by adjusting the resistance value of the adjustable resistor 1024, thereby adjusting the charge of the first electrode 1021 and the second electrode 1022, and further changing the electric field strength of the DC electric field acting on the reflected electron q'.

[0137] In some embodiments, as Figure 16 As shown, in addition to the first electrode 1021, the second electrode 1022, the transformer 1023 and the adjustable resistor 1024, the electric field generating device 102 also includes: a rectifier 1025 for converting alternating current into direct current; a filter capacitor 1026 and a voltage stabilizer 1027 for stabilizing the voltage output to the first electrode 1021 and the second electrode 1022 within a preset range.

[0138] For example, Figure 16 As shown, the rectifier 1025, the filter capacitor 1026 and the voltage regulator 1027 are connected in parallel to the power supply (as shown in FIG. Figure 16 ). Transformer 1023 adjusts the AC voltage of the power supply to a preset range based on a preset transformation ratio. Rectifier 1025 converts the transformed AC power into DC power. Filter capacitor 1026 and voltage regulator 1027 stabilize and filter the converted DC power. Adjustable resistor 1024 adjusts the voltage output to first electrode 1021 and second electrode 1022 based on changes in its own resistance, so that electric field generating device 102 generates a continuous and stable DC electric field.

[0139] In addition to the electron gun 101 and the electric field generating device 102, the coating system 10 also includes other components, which will be described below in conjunction with an embodiment:

[0140] In some embodiments, as Figure 17a as well as Figure 17bAs shown, the coating system 10 further includes a baffle M having an opening area and a crucible N. The outer surfaces of the baffle M and the crucible N are insulated. The opening area of ​​the baffle M is used to pass vapor containing the target material A element to form a film containing the target material A element on the substrate B. The solid area of ​​the baffle M is used to limit the area and shape of the coating area of ​​the substrate B and block reflected electrons q' from bombarding the substrate B. The crucible N is used to accommodate the target material A.

[0141] It should be noted that, in some embodiments, the electric field lines of the DC electric field will pass through the physical areas of the baffle M and the crucible N. If the baffle M and / or the crucible N are grounded, electrostatic shielding will occur, that is, the electric field strength in the DC electric field will be weakened or even completely shielded. Therefore, the baffle M and the crucible N need to be insulated from the ground wire or other grounding devices.

[0142] Those skilled in the art should know that the insulating surface of the baffle M and the crucible N can be made of high-temperature resistant ceramic materials, mica, aluminum oxide, silicon nitride, silicon carbide, aluminum silicate, silicon dioxide, and the like.

[0143] Example 1: Figure 17a As shown, the first electrode 1021 is positively charged and the second electrode 1022 is negatively charged. The opening region K is larger than the area enclosed by the second electrode 1022, and the second electrode 1022 is embedded in the opening region K of the baffle M. Metal vapor Q passes through the opening region K and reaches the surface of the substrate B to form a film.

[0144] Example 2: For example Figure 17b As shown, Figure 17a The difference between Example 1 and Example 2 is that the second electrode 1022 is located above the baffle M, and the electric field formed by the first electrode 1021 and the second electrode 1022 covers the opening area K of the baffle M. On the one hand, compared to Example 1, which embeds the second electrode 1022 in the opening area K, Example 2 can reduce the area of ​​the opening area K that is blocked, thereby increasing the coating efficiency. On the other hand, compared to embedding the second electrode 1022 in the opening area K, this example can increase the coverage of the DC electric field.

[0145] Based on the same technical concept, the present application also provides a production system, such as Figure 18 As shown, the production system 20 includes any of the above-mentioned coating systems 10. In addition, the implementation of the production system can refer to the implementation of the coating system 10, and the repeated parts will not be repeated.

[0146] Those skilled in the art should know that the production system can be a composite current collector production line deployed with the coating system 10, or other production lines that require an evaporation process, and this application does not limit this.

[0147] In summary, the present application provides a coating system and production system for improving the tensile strength and ductility of a composite current collector. The coating system includes an electron gun and an electric field generating device: the electron gun is used to emit incident electrons toward a target material to form a film containing an element of the target material A on a substrate; the electric field generating device is used to generate a direct current (DC) electric field and exert a force on reflected electrons in the DC electric field, thereby reducing the kinetic energy of the reflected electrons and / or changing the direction of motion of the reflected electrons.

[0148] By reducing the kinetic energy of the reflected electrons, the number of reflected electrons reaching the substrate and the damage to the substrate caused by the reflected electrons can be reduced. By changing the direction of motion of the reflected electrons, the reflected electrons can be gradually moved away from the substrate, thereby reducing the number of reflected electrons reaching the substrate, improving the ductility and tensile strength of the substrate after vapor deposition, and thus improving the ductility and tensile strength of the composite current collector.

[0149] On the other hand, the DC electric field in the present application can cover the position where the incident electrons bombard the target material, but not the incident trajectory of the incident electrons, so as to exert force on the reflected electrons when they are formed without interfering with the normal incident trajectory of the incident electrons.

[0150] On the other hand, the electrode in the present application may include multiple conductive layers. By superimposing the electric field of multiple conductive layers to achieve a higher field strength, the voltage requirement of the electrode for the power supply equipment can be reduced, making selection easier.

[0151] Finally, the electric field generating device in the present application may also include a transformer and an adjustable resistor, and the voltage output to the first electrode and the second electrode is changed by the transformer's transformation ratio and the resistance value of the adjustable resistor connected to the circuit, thereby adjusting the amount of charge on the electrode to meet the needs of protecting the substrate in different evaporation processes.

[0152] It should be understood that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person of ordinary skill in the art should understand that the technical solutions described in the aforementioned embodiments can still be modified, or some or all of the technical features therein can be replaced by equivalents. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

[0153] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A coating system, characterized in that: include: an electron gun for emitting incident electrons toward a target material to form a film containing an element of the target material on a substrate; and An electric field generating device includes a first electrode and a second electrode with opposite polarities, wherein a DC electric field is formed between the first electrode and the second electrode, and the DC electric field is used to reduce the kinetic energy of reflected electrons and / or reduce the number of reflected electrons reaching the substrate. The reflected electrons are formed by the incident electrons being reflected by the target material.

2. The coating system according to claim 1, characterized in that: The direction of the electric field force exerted on the reflected electrons from the DC electric field is different from the moving direction of the reflected electrons.

3. The coating system according to claim 1 or 2, characterized in that: The direction of the electric field force exerted on the reflected electrons from the DC electric field is opposite to the moving direction of the reflected electrons.

4. The coating system according to claim 1 or 2, characterized in that: The direction of the electric field force on the reflected electrons is perpendicular to the moving direction of the reflected electrons.

5. The coating system according to any one of claims 1 to 4, characterized in that: The first electrode, the second electrode and the target are arranged along the field intensity direction of the DC electric field, and vertical projections of the first electrode, the second electrode and the target along the field intensity direction are overlapped.

6. The coating system according to any one of claims 1 to 5, characterized in that: The first electrode is a positive electrode, and the first electrode is located between the second electrode and the target, or the target is located between the first electrode and the second electrode.

7. The coating system according to any one of claims 1 to 6, characterized in that: The vertical projection of the incident electron trajectory on the reflection surface intersects with the electrode overlapping area at a point, wherein the electrode overlapping area is the overlapping part of the vertical projections of the first electrode and the second electrode on the reflection surface.

8. The coating system according to any one of claims 1 to 7, characterized in that: Each of the first electrode and the second electrode includes at least one conductive layer.

9. The coating system according to any one of claims 1 to 8, characterized in that: The electric field generating device further comprises: The transformer is used to convert an input voltage into a preset voltage to adjust the charge amounts of the first electrode and the second electrode.

10. The coating system according to any one of claims 1 to 9, characterized in that: The electric field generating device further comprises: The adjustable resistor is used to adjust the charge of the first electrode and the second electrode by adjusting the resistance value.

11. A production system, characterized in that: Comprising the coating system according to any one of claims 1-10.

Images