Cavity cooling device and semiconductor equipment
By using Peltier cooling elements and gas pre-cooling technology in the cavity cooling device, the problems of slow and inconsistent cavity cooling rate are solved, and a fast and stable cavity cooling effect is achieved to meet the complex process requirements of semiconductor manufacturing.
Patent Information
- Application Number
- CN202410255576.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-06
- Publication Date
- 2025-09-16
AI Technical Summary
Existing rapid thermal processing chamber cooling methods have problems such as slow cooling rate and inconsistent temperature, especially in continuous full-load processes, it is difficult to maintain a stable cooling effect.
Peltier cooling elements are used to pre-cool the gas, and the cooling gas is delivered to the cavity through the cooling module. Combined with gas pressure regulation and temperature detection, rapid cooling is achieved.
The cooling efficiency of the cavity is improved, ensuring the consistent cooling rate each time, meeting the heat dissipation requirements of different process steps, and adapting to the temperature control of complex processes.
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Figure CN120656954A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a cavity cooling device and semiconductor equipment. Background Art
[0002] Rapid thermal processing (RTP) is a heat treatment process used in semiconductor manufacturing. It shortens the process time and suppresses diffusion during carrier activation. Temperature control of silicon wafers is crucial during semiconductor processing.
[0003] Currently, the chamber cooling method used in the rapid thermal processing process is mainly a combination of gas cooling (heat exchange through nitrogen or helium gas) and air cooling.
[0004] Because different rapid thermal processing processes require different cooling rates, and air cooling is inherently limited by its cooling capacity, it can lead to slow cooling rates. Furthermore, heating the wafer and cooling it within the same heat treatment chamber can cause the chamber temperature to gradually rise over time. This makes subsequent cooling very difficult, and the cooling rate cannot be maintained consistently, especially during continuous full-load processing. Summary of the Invention
[0005] The purpose of the present invention is to overcome the above-mentioned defects in the prior art and provide a cavity cooling device and a semiconductor device.
[0006] To achieve the above object, the technical solution of the present invention is as follows:
[0007] The present invention provides a cavity cooling device, comprising:
[0008] A cooling module is provided with a Peltier cooling element, the Peltier cooling element is used to cool the first gas flowing through, and the cooling module is used to provide the cooled first gas to the cavity for rapid temperature reduction.
[0009] Furthermore, the cooling module is also provided with a first cooling channel, which is provided on the cold end of the Peltier cooling element. The first cooling channel is used to allow the first gas to pass through, so that the first gas is cooled when flowing through the cold end, and the cooled first gas is output to the cavity.
[0010] Furthermore, the cooling module is also provided with a cold conductor, which is provided on the cold end, and the first cooling channel is provided in the cold conductor. A first air inlet and a first air outlet are respectively provided at both ends of the cold conductor, and the two ends of the first cooling channel are respectively connected to the first air inlet and the first air outlet, the first air inlet is used to allow the first gas to pass through, and the first air outlet is used to output the first gas cooled in the first cooling channel, and the cavity is provided with a first air inlet, and the first air outlet is connected to the first air inlet.
[0011] Furthermore, an air cavity is provided in the cold conductor, and the air cavity is connected to the first cooling channel through both ends. The air cavity is used to pre-cool the stored first gas when the first air inlet is closed.
[0012] Furthermore, the air cavity is provided with a temperature detection unit and / or an air pressure adjustment unit.
[0013] Furthermore, the cooling module is also provided with a second cooling channel, one end of the second cooling channel is provided with a second air inlet, and the other end of the second cooling channel is connected to the second air inlet provided on the cavity. The second cooling channel is used to pass the second gas at room temperature introduced from the second air inlet into the cavity through the second air inlet for normal cooling.
[0014] Furthermore, the cooling module is further provided with a third cooling channel, one end of the third cooling channel is connected to the first air inlet, the other end of the third cooling channel is connected to the second cooling channel, and the first air outlet is connected to the third cooling channel.
[0015] Furthermore, it also includes: an exhaust port provided on the cavity, the exhaust port is used to cooperate with the first air inlet and / or the second air inlet to form a cooling airflow in the cavity.
[0016] Furthermore, it also includes: a heat dissipation module, which is arranged on the hot end of the Peltier cooling element, and the heat dissipation module includes a heat diffusion layer and a fourth cooling channel arranged in sequence on the hot end, and an independently arranged exhaust fan, and heat dissipation fins are distributed on the surface of the fourth cooling channel.
[0017] The present invention also provides a semiconductor device, including a cavity and the cavity cooling device.
[0018] As can be seen from the above technical solution, by providing a Peltier cooling element on the cooling module, the present invention can utilize the Peltier effect to first rapidly cool the first gas, then provide the cooled first gas to the cavity, effectively removing the heat energy within the cavity, achieving rapid cooling of the cavity, improving heat dissipation efficiency, accelerating heat dissipation, and fully meeting the heat dissipation requirements of thermal processing manufacturing. In particular, during continuous full-load processes, the cooling rate and cooling effect can be consistent each time, and the temperature of the cooling gas can be viewed and controlled in real time to achieve the purpose of controlling the cooling rate, meeting the needs of different complex processes. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 The figure is a schematic structural diagram of a cavity cooling device according to a preferred embodiment of the present invention.
[0020] Figure 2 The figure is a schematic top view of the structure of a cold conductor according to a preferred embodiment of the present invention.
[0021] Figure 3 The figure is a schematic structural diagram of a heat dissipation module according to a preferred embodiment of the present invention.
[0022] Figure 4 This is a structural principle diagram of a Peltier cooling element according to a preferred embodiment of the present invention. DETAILED DESCRIPTION
[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
[0024] The specific embodiments of the present invention are further described in detail below with reference to the accompanying drawings.
[0025] refer to Figure 1A cavity cooling device according to the present invention includes a cooling module 20. The cooling module 20 is provided with a Peltier cooling element 207, which is used to cool a first gas flowing therethrough. The cooling module 20 is used to provide the cooled first gas to the cavity 10 to rapidly cool the interior of the cavity 10 (including the processing object 102).
[0026] In some embodiments, the chamber 10 includes a rapid thermal processing chamber 10 for semiconductor thermal processing; the rapid thermal processing chamber 10 is used to perform rapid thermal processing on a processing object 102 placed on a carrier 101, such as a silicon wafer.
[0027] In addition, the cavity 10 may also be any cavity 10 that needs to be rapidly cooled.
[0028] In some embodiments, the cooling module 20 is disposed outside the cavity 10. The Peltier cooling element 207 has a cold end and a hot end (illustrated as being located at the upper and lower ends of the Peltier cooling element 207, respectively). The cooling module 20 is provided with a first cooling channel 206, and the first cooling channel 206 is disposed at the cold end of the Peltier cooling element 207. The first cooling channel 206 is used to pass a first gas. When the first gas flows through the first cooling channel 206 to the cold end, it is cooled by the cold end of the Peltier cooling element 207. The first gas, cooled by the cold end, is then further output to the cavity 10 for rapid cooling. The first gas can be a gas with high heat conduction efficiency, such as nitrogen or helium.
[0029] refer to Figure 1-Figure 2 In some embodiments, the cooling module 20 is provided with a cold conductor 208 . The cold conductor 208 may be block-shaped and disposed on the cold end. The first cooling channel 206 is disposed in the cold conductor 208 .
[0030] The right and left ends of the cold conductor 208 are provided with a first air inlet 205 and a first air outlet 209, respectively. The right and left ends of the first cooling channel 206 are connected to the first air inlet 205 and the first air outlet 209, respectively. In other words, the ends of the first cooling channel 206 are exposed at the ends of the cold conductor 208, thereby forming the first air inlet 205 and the first air outlet 209, respectively.
[0031] The first gas inlet 205 is used to introduce the first gas, and the first gas outlet 209 is used to output the first gas cooled in the first cooling channel 206 to the cavity 10 .
[0032] In some embodiments, the cavity 10 is provided with a first air inlet 211 , and the first air outlet 209 is connected to the first air inlet 211 , so that the first gas cooled in the first cooling channel 206 can be introduced into the cavity 10 through the first air inlet 211 for cooling.
[0033] In some embodiments, the first air inlet 211 is disposed on the first side wall on the right side of the cavity 10 and is located at a height higher than the surface of the carrier 101 .
[0034] In some embodiments, an air cavity 214 is provided in the cold conductor 208. The air cavity 214 is connected to the first cooling channel 206 at both ends. In this way, the first gas introduced from the first air inlet 205 will enter the air cavity 214 along the first cooling channel 206, and after filling the air cavity 214, it will continue to be output along the first cooling channel 206 to the first air outlet 209. The air cavity 214 is used to pre-cool the first gas stored therein when the first air inlet 211 is closed (i.e., when rapid cooling is not required). This allows the first gas to be fully cooled in the air cavity 214 of a certain volume, so that when rapid cooling is required, a large flow of sufficiently low-temperature first gas can be continuously delivered to the cavity 10, thereby effectively increasing the cooling rate.
[0035] In some embodiments, the first cooling channel 206 forms a reciprocatingly curved rotating microchannel distribution structure inside the cold conductor 208 , so that the first gas can be fully cooled at the cold end before being output from the cold conductor 208 .
[0036] The cold conductor 208 may be made of a material susceptible to cooling, such as ceramic, and the first cooling channel 206 and the air cavity 214 structure may be machined therein.
[0037] In some embodiments, the air cavity 214 is provided with a temperature detection unit, such as a temperature sensor 213. The temperature sensor 213 detects the temperature of the first gas in the air cavity 214 and controls the current and voltage of the Peltier cooling element 207 to achieve the effect of controlling the cooling temperature.
[0038] In some embodiments, the gas cavity 214 is provided with a gas pressure regulating unit, for example, a pressurization / depressurization device, which can be adjusted so that the first gas is output to the cavity 10 quickly / slowly, and can be used to control the cooling rate to meet different process requirements.
[0039] In this way, the cooling rate and cooling effect can be made consistent each time cooling is performed, and the temperature of the first gas can be viewed and controlled in real time to meet the requirement of controlling the cooling rate.
[0040] refer to Figure 1. In some embodiments, the cooling module 20 is further provided with a second cooling channel 202. Among them, a second air inlet 203 is provided at one end of the second cooling channel 202, and the other end of the second cooling channel 202 is connected to the second air inlet 201 provided on the cavity 10 as a second air outlet. The second cooling channel 202 is used to pass the second gas at room temperature introduced from the second air inlet 203 into the cavity 10 through the second air inlet 201 for normal cooling under normal circumstances. Introducing the second gas at room temperature into the cavity 10 through the second cooling channel 202 can be used for ordinary cooling treatment of the inside of the cavity 10 in a process with a normal beat. Under this requirement, it is only necessary to open the second air inlet 201 to pass the second gas at room temperature, and close the first air inlet 211 to stop the introduction of the first gas. During a continuous full-load process with an accelerated tact time, when rapid cooling of the chamber 10 is required, the first air inlet 211 can be opened to introduce the cooled first gas, while the second air inlet 201 (second air inlet 203) can be closed to stop the introduction of the second gas, thereby rapidly cooling the interior of the chamber 10 (including the silicon wafers). Dry air, for example, can be used as the second gas.
[0041] In some embodiments, the second air inlet 201 is disposed on the top of the cavity 10 and above the carrier 101 .
[0042] In some embodiments, the cooling module 20 further includes a third cooling channel 210. The left end of the third cooling channel 210 is connected to the first air inlet 211, and the right end of the third cooling channel 210 is connected to the second cooling channel 202. The first air outlet 209 is also connected to the third cooling channel 210. During a continuous full-load process, when faster cooling of the chamber 10 is required, the second air inlet 203 can be closed, the first air inlet 205 can be opened, and both the first air inlet 211 and the second air inlet 201 can be opened simultaneously. At this point, the first gas, which has been fully pre-cooled by the air cavity 214, can then be output from the first air outlet 209. One path follows the left end of the third cooling channel 210 into the first air inlet 211, and then enters the cavity 10 from the upper side of the cavity 10. Another path follows the right end of the third cooling channel 210 along the second cooling channel 202 into the second air inlet 201, and then enters the cavity 10 from the top of the cavity 10. This allows a larger flow rate of first gas to be introduced into the cavity 10 from different directions, achieving faster cooling of the cavity 10. Furthermore, by adjusting the pressure-increasing / pressure-reducing device and regulating the current and voltage of the Peltier cooling element 207, the cooling temperature and cooling rate can be better controlled, effectively meeting the differentiated heat dissipation requirements brought about by the different complex process steps in semiconductor manufacturing.
[0043] refer to Figure 1In some embodiments, the device further includes an exhaust port 212 disposed on the cavity 10. When the exhaust port 212 is open, it cooperates with the first air inlet 211 and / or the second air inlet 201 in an open state to form a cooling airflow in the cavity 10, quickly carrying the heat energy inside the cavity 10 out of the cavity 10, while improving the heat dissipation efficiency and accelerating the heat dissipation speed, fully meeting the heat dissipation demand for rapid cooling.
[0044] In some embodiments, the air outlet 212 is disposed on the second side wall of the cavity 10. Preferably, the air outlet 212 is located on the opposite side of the first air inlet 211 (ie, on the left side of the cavity wall).
[0045] In some embodiments, control valves 204 for opening and closing ventilation are respectively provided on the first air inlet 205 , the first air outlet 209 , the second air inlet 203 , the first air inlet 211 , the second air inlet 201 and the air outlet 212 .
[0046] refer to Figure 3 In some embodiments, the device further includes a heat dissipation module 30. The heat dissipation module 30 is provided on the hot end of the Peltier cooling element 207 and is used to quickly dissipate the heat energy generated on the hot end to ensure that the Peltier cooling element 207 continues to work effectively.
[0047] In some embodiments, the heat dissipation module 30 includes a heat diffusion layer 301 and a fourth cooling channel 302, which are sequentially disposed on the hot end, and a separate exhaust fan 305. The heat dissipation module 300 further includes a cavity structure 304 below the fourth cooling channel 302. The exhaust fan 305 is disposed on the walls of the cavity structure 304, which also includes an air grille. When the exhaust fan 305 is turned on, convection cooling rapidly dissipates heat energy transferred from the hot end to the heat diffusion layer 301 and fourth cooling channel 302.
[0048] Furthermore, heat dissipation fins 303 are distributed on the surface of the fourth cooling channel 302 within the cavity structure 304. The heat dissipation fins 303 increase the surface area of the fourth cooling channel 302, thereby rapidly dissipating heat energy transferred to the fourth cooling channel 302. When the exhaust fan 305 is turned on, the heat energy in the heat dissipation fins 303 and the fourth cooling channel 302 can be dissipated more quickly through air cooling.
[0049] Circulating cooling water can be introduced into the fourth cooling channel 302 to remove heat energy from the fourth cooling channel 302 itself, and cooperate with the heat dissipation of the heat dissipation fins 303 and the air cooling effect of the exhaust fan 305 to achieve a good comprehensive heat dissipation effect.
[0050] refer to Figure 4In some embodiments, the Peltier cooling element 207 includes a plurality of P-type semiconductors 2071 and N-type semiconductors 2073 arranged alternately in sequence, and the P-type semiconductors 2071 and N-type semiconductors 2073 are arranged in pairs; adjacent P-type semiconductors 2071 and N-type semiconductors 2073 are isolated by an insulator 2072. The upper ends of each pair of P-type semiconductors 2071 and N-type semiconductors 2073 are connected by a conductor 2074, and the conductors 2074 located at the upper ends of each pair of P-type semiconductors 2071 and N-type semiconductors 2073 are isolated by the insulator 2072. The lower ends of the N-type semiconductors 2073 and P-type semiconductors 2071 in adjacent pairs are also connected by a conductor 2074, and the conductors 2074 located at the lower ends of the N-type semiconductors 2073 and P-type semiconductors 2071 in adjacent pairs are also isolated by the insulator 2072. Figure 4 The figure shows three P-type semiconductors 2071 and three N-type semiconductors 2073 arranged alternately. Adjacent P-type semiconductors 2071 and N-type semiconductors 2073 form a pair, forming three pairs of P-type semiconductors 2071 and N-type semiconductors 2073. The lower ends of the P-type semiconductors 2071 and N-type semiconductors 2073, located on the left and right outermost sides, are connected to the positive and negative terminals of a power source 2076 via wires 2075, respectively, forming a circuit. This forms the cold end of the Peltier cooling element 207 at the upper end, and the hot end at the lower end. When power is applied to the circuit, the Peltier effect occurs, where heat is absorbed at the cold end and released at the hot end. This rapidly cools the first gas flowing through the first cooling channel 206 of the cold conductor 208 located at the cold end. This improves the heat dissipation efficiency and speeds up the heat dissipation of the semiconductor rapid thermal annealing chamber 10 when cooled by the first gas. At the same time, the heat dissipation module 30 provided on the hot end can effectively and quickly dissipate heat from the hot end.
[0051] refer to Figure 1 A semiconductor device of the present invention includes a cavity 10 and the cavity cooling device of the present invention.
[0052] In some embodiments, the semiconductor device includes a rapid thermal processing device for performing rapid thermal processing on a processing object 102, such as a silicon wafer, placed on a carrier 101 in a cavity 10, and through a cavity cooling device, after each heating process of rapid thermal processing is completed, the interior of the cavity 10 and its silicon wafer are rapidly cooled.
[0053] In some embodiments, the semiconductor equipment may also be any semiconductor process equipment whose cavity 10 needs to be rapidly cooled.
[0054] In summary, by providing the Peltier cooling element 207 on the cooling module 20, the present invention utilizes the Peltier effect to rapidly cool the first gas before providing the cooled first gas to the cavity 10, efficiently removing the heat energy within the cavity 10 and achieving rapid cooling of the cavity 10. This improves heat dissipation efficiency and speeds up heat dissipation, fully meeting the heat dissipation requirements of thermal processing. In particular, during continuous full-load processes, the cooling rate and cooling effect can be consistent each time, while the temperature of the cooling gas can be acquired and controlled in real time to achieve the purpose of controlling the cooling rate, thus meeting the requirements of various complex process steps.
[0055] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.
Claims
1. A cavity cooling device, characterized in that: include: A cooling module is provided with a Peltier cooling element, the Peltier cooling element is used to cool the first gas flowing through, and the cooling module is used to provide the cooled first gas to the cavity for rapid temperature reduction.
2. The cavity cooling device according to claim 1, characterized in that: The cooling module is further provided with a first cooling channel, which is provided on the cold end of the Peltier cooling element. The first cooling channel is used to allow the first gas to pass through so that the first gas is cooled when flowing through the cold end, and the cooled first gas is output to the cavity.
3. The cavity cooling device according to claim 2, characterized in that: The cooling module is also provided with a cold conductor, which is provided on the cold end. The first cooling channel is provided in the cold conductor. A first air inlet and a first air outlet are respectively provided at both ends of the cold conductor. The two ends of the first cooling channel are respectively connected to the first air inlet and the first air outlet. The first air inlet is used to allow the first gas to enter, and the first air outlet is used to output the first gas after being cooled in the first cooling channel. The cavity is provided with a first air inlet, and the first air outlet is connected to the first air inlet.
4. The cavity cooling device according to claim 3, characterized in that: An air cavity is provided in the cold conductor, and the air cavity is connected to the first cooling channel through both ends. The air cavity is used to pre-cool the stored first gas when the first air inlet is closed.
5. The cavity cooling device according to claim 4, characterized in that: The air cavity is provided with a temperature detection unit and / or an air pressure adjustment unit.
6. The cavity cooling device according to claim 3, characterized in that: The cooling module is also provided with a second cooling channel, one end of the second cooling channel is provided with a second air inlet, the other end of the second cooling channel is connected to the second air inlet provided on the cavity, and the second cooling channel is used to pass the second gas at room temperature introduced from the second air inlet into the cavity through the second air inlet for normal cooling.
7. The cavity cooling device according to claim 6, characterized in that: The cooling module is further provided with a third cooling channel, one end of the third cooling channel is connected to the first air inlet, the other end of the third cooling channel is connected to the second cooling channel, and the first air outlet is connected to the third cooling channel.
8. The cavity cooling device according to claim 7, characterized in that: Also includes: An air exhaust port is provided on the cavity, and the air exhaust port is used to cooperate with the first air inlet and / or the second air inlet to form a cooling airflow in the cavity.
9. The cavity cooling device according to claim 2, characterized in that: Also includes: A heat dissipation module is arranged on the hot end of the Peltier cooling element, and the heat dissipation module includes a heat diffusion layer and a fourth cooling channel arranged in sequence on the hot end, and an independently arranged exhaust fan, and heat dissipation fins are distributed on the surface of the fourth cooling channel.
10. A semiconductor device, characterized in that: It comprises a cavity and the cavity cooling device according to any one of claims 1 to 9.