Semiconductor structure and semiconductor device

Abstract

The embodiment of the invention provides a semiconductor structure and a semiconductor device, and the semiconductor structure comprises a first substrate which comprises a first surface and a second surface which are oppositely disposed. The inductor is located on the first surface or the second surface of the first substrate, and the multiple functional structures are located on the first surface of the first substrate and connected with the inductor; the soft magnetic part is at least located on the side, away from the first substrate, of the inductor, and the orthographic projection of the soft magnetic part on the first substrate covers the orthographic projection of the inductor on the first substrate.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular to a semiconductor structure and a semiconductor device. Background Art

[0002] An inductor (also known as a choke or reactor) is a critical circuit component that generates an electromotive force by changing the current, thereby resisting the change in current. Inductors are widely used in many fields, such as communications and wireless charging. However, with the market's continuous pursuit of device miniaturization, device sizes are becoming increasingly smaller. This results in many performance issues affecting inductor functionality, which urgently need to be addressed. Summary of the Invention

[0003] An embodiment of the present disclosure provides a semiconductor structure, comprising:

[0004] a first substrate, the first substrate comprising a first surface and a second surface oppositely disposed;

[0005] an inductor, wherein the inductor is located on the first surface or the second surface of the first substrate,

[0006] a plurality of functional structures, wherein the plurality of functional structures are located on the first surface of the first substrate and connected to the inductor;

[0007] The soft magnetic portion is located at least on a side of the inductor away from the first substrate, and an orthographic projection of the soft magnetic portion on the first substrate covers an orthographic projection of the inductor on the first substrate.

[0008] In some embodiments, the soft magnetic portion includes a first sub-portion extending in a direction parallel to the plane of the first substrate and a second sub-portion extending in a direction perpendicular to the plane of the first substrate, and the first sub-portion is connected to the second sub-portion.

[0009] In some embodiments, a first material layer is formed on the first surface of the first substrate, the inductor is located in the first material layer, the functional structure and the soft magnetic portion are located on the surface of the first material layer away from the first substrate, and the soft magnetic portion is located between at least part of the functional structure.

[0010] In some embodiments, a first material layer is formed on the first surface of the first substrate, the inductor is located in the first material layer, the functional structure is located on the surface of the first material layer away from the first substrate, the soft magnetic portion is located in the first material layer, and the orthographic projection of the soft magnetic portion on the first substrate is located between the orthographic projections of at least part of the functional structure on the first substrate; wherein the surface of the soft magnetic portion away from the first substrate is not higher than the surface of the first material layer away from the first substrate.

[0011] In some embodiments, a first material layer is formed on the first surface of the first substrate, the functional structure is located on the surface of the first material layer away from the first substrate, a second material layer is formed on the second surface of the first substrate, the inductor is located in the second material layer, and the soft magnetic portion includes at least a first soft magnetic portion, and the first soft magnetic portion is located on the surface of the second material layer away from the first substrate.

[0012] In some embodiments, the soft magnetic portion further includes a second soft magnetic portion, and the second soft magnetic portion is located on a side of the inductor away from the first soft magnetic portion.

[0013] In some embodiments, the second soft magnetic portion is located on a side of the inductor away from the first soft magnetic portion, which may include at least one of the following situations:

[0014] The second soft magnetic portion is located on a surface of the first material layer away from the first substrate, and the second soft magnetic portion is located between at least a portion of the functional structures;

[0015] The second soft magnetic portion is located in the first material layer, and an orthographic projection of the second soft magnetic portion on the first substrate is located between orthographic projections of at least part of the functional structure on the first substrate, and a surface of the second soft magnetic portion away from the first substrate is no higher than a surface of the first material layer away from the first substrate;

[0016] The second soft magnetic portion is located in the second material layer, and the second soft magnetic portion is not in contact with the first substrate; or

[0017] The second soft magnetic portion is at least partially located in the first substrate, and a surface of the second soft magnetic portion protrudes or does not protrude from a surface of the first substrate.

[0018] In some embodiments, the soft magnetic part includes at least one of a patch material, a material obtained by adding magnetic powder to a solvent, and a material formed by a semiconductor process, or a combination thereof.

[0019] In some embodiments, the inductor includes a winding coil and a magnetic core, wherein the winding coil is wound around the magnetic core.

[0020] In some embodiments, the semiconductor structure further includes: a connection structure located in the first substrate or on the surface of the first substrate, wherein the connection structure is connected to the functional structure.

[0021] The present disclosure also provides a semiconductor device, comprising:

[0022] A second substrate and the semiconductor structure described in any one of the above embodiments, wherein the semiconductor structure is located on the second substrate and connected to the second substrate.

[0023] The semiconductor structure and semiconductor device provided in the embodiments of the present disclosure include: a first substrate, the first substrate including a first surface and a second surface arranged opposite to each other; an inductor, the inductor being located on the first surface or the second surface of the first substrate; a plurality of functional structures, the plurality of functional structures being located on the first surface of the first substrate and connected to the inductor; and a soft magnetic portion, the soft magnetic portion being located at least on a side of the inductor away from the first substrate, and the orthographic projection of the soft magnetic portion on the first substrate overlapping the orthographic projection of the inductor on the first substrate. Because the soft magnetic portion has advantages such as high magnetic permeability, low residual magnetization, low coercive force, and high thermal conductivity, in the embodiments of the present disclosure, by providing the soft magnetic portion at least on a side of the inductor away from the first substrate, and adopting a configuration in which the orthographic projection of the soft magnetic portion on the substrate overlaps the orthographic projection of the inductor on the substrate, the inductor's inductance per unit area can be effectively increased, and the inductor can effectively shield external scattered electromagnetic fields during operation, thereby reducing communication interference and conductor eddy current heating. Furthermore, due to the high thermal conductivity of the soft magnetic portion, it can also help the semiconductor structure containing the inductor achieve good heat dissipation. It can be seen that the introduction of the soft magnetic portion enables the semiconductor structure provided by the embodiments of the present disclosure to achieve good performance even when miniaturized.

[0024] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the present disclosure will become apparent from the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 A schematic diagram of a partial structure of a semiconductor structure provided by an embodiment of the present disclosure;

[0027] Figure 2 A schematic structural diagram of a semiconductor structure provided in accordance with an embodiment of the present disclosure;

[0028] Figure 3 A schematic structural diagram of a semiconductor structure provided by another embodiment of the present disclosure;

[0029] Figure 4 for Figure 3 A schematic partial cross-sectional view of a provided semiconductor structure;

[0030] Figure 5 A schematic structural diagram of a semiconductor structure provided in yet another embodiment of the present disclosure;

[0031] Figure 6 for Figure 5 A schematic partial cross-sectional view of a provided semiconductor structure;

[0032] Figures 7 to 11 Schematic diagrams of semiconductor structures provided by different embodiments of the present disclosure;

[0033] Figure 12 A schematic diagram of the structure of the soft magnetic part provided in the embodiment of the present disclosure; wherein, Figure 12 Figure (1) is a schematic structural diagram of the soft magnetic part; Figure 12 Figure (2) is a schematic structural diagram of the soft magnetic part and the connection structure; Figure 12 Figure (3) is a schematic diagram of the structure of the soft magnetic part and the inductor;

[0034] Figure 13 and Figure 14 Schematic diagram of the structure of the inductor provided by different embodiments of the present disclosure. DETAILED DESCRIPTION

[0035] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments described herein. Instead, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0036] In the following description, numerous specific details are provided to provide a more thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present disclosure; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.

[0037] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0038] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, or coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. However, when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part exists in the present disclosure.

[0039] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0040] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present disclosure. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0041] Inductors are widely used in many fields, such as communications and wireless charging. To meet device requirements, inductors are often placed adjacent to other structures, including but not limited to chips or other conductive structures. These structures inevitably generate magnetic fields or heat during operation, which can easily cause interference or heat concentration within the inductor, impacting the proper functioning of the semiconductor structure containing the inductor.

[0042] Based on this, the following technical solutions of the embodiments of the present disclosure are proposed:

[0043] An embodiment of the present disclosure provides a semiconductor structure, comprising:

[0044] a first substrate, the first substrate comprising a first surface and a second surface oppositely disposed;

[0045] an inductor, wherein the inductor is located on the first surface or the second surface of the first substrate,

[0046] a plurality of functional structures, wherein the plurality of functional structures are located on the first surface of the first substrate and connected to the inductor;

[0047] The soft magnetic portion is located at least on a side of the inductor away from the first substrate, and an orthographic projection of the soft magnetic portion on the first substrate covers an orthographic projection of the inductor on the first substrate.

[0048] Since the soft magnetic portion has the advantages of high magnetic permeability, low residual magnetization, low coercive force and high thermal conductivity, in the embodiment of the present disclosure, by providing a soft magnetic portion on at least one side of the inductor away from the first substrate, and adopting a setting method in which the orthographic projection of the soft magnetic portion on the substrate covers the orthographic projection of the inductor on the substrate, the inductance value per unit area of ​​the inductor can be effectively improved, and it helps the inductor to effectively shield the external scattered electromagnetic field during operation, thereby reducing communication interference and eddy current heating of the conductor. In addition, because the soft magnetic portion has a high thermal conductivity, it can also help the semiconductor structure containing the inductor achieve good heat dissipation. It can be seen that due to the introduction of the soft magnetic portion, the semiconductor structure provided by the embodiment of the present disclosure can achieve good performance even when the size is miniaturized.

[0049] To make the above-mentioned purposes, features, and advantages of the present disclosure more clearly understood, the following detailed description of the specific embodiments of the present disclosure is provided in conjunction with the accompanying drawings. When describing the embodiments of the present disclosure, for ease of explanation, the schematic diagrams may be partially enlarged to a different scale than the general scale. Moreover, the schematic diagrams are merely examples and should not limit the scope of protection of the present disclosure.

[0050] Figure 1A schematic diagram of a partial structure of a semiconductor structure provided by an embodiment of the present disclosure; Figure 2 A schematic structural diagram of a semiconductor structure provided in accordance with an embodiment of the present disclosure; Figure 3 A schematic structural diagram of a semiconductor structure provided by another embodiment of the present disclosure; Figure 4 for Figure 3 A schematic partial cross-sectional view of a provided semiconductor structure;

[0051] Figure 5 A schematic structural diagram of a semiconductor structure provided in yet another embodiment of the present disclosure; Figure 6 for Figure 5 A schematic partial cross-sectional view of a provided semiconductor structure; Figures 7 to 11 Schematic diagrams of semiconductor structures provided by different embodiments of the present disclosure; Figure 12 A schematic diagram of the structure of the soft magnetic part provided in the embodiment of the present disclosure; wherein, Figure 12 Figure (1) is a schematic structural diagram of the soft magnetic part; Figure 12 Figure (2) is a schematic diagram of the structure of the magnetic material and the connection structure; Figure 12 Figure (3) is a schematic diagram of the structure of the soft magnetic part and the inductor; Figure 13 and Figure 14 Schematic diagram of the structure of the inductor provided by different embodiments of the present disclosure.

[0052] The semiconductor structure provided by the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0053] like Figure 1 、 Figure 2 、 Figure 3 、 Figure 5 and Figures 7 to 11 As shown, the semiconductor structure S includes:

[0054] A first substrate 10, the first substrate 10 includes a first surface S1 and a second surface S2 arranged opposite to each other;

[0055] The inductor 11 is located on the first surface S1 or the second surface S2 of the first substrate 10.

[0056] a plurality of functional structures 12 , the plurality of functional structures 12 being located on the first surface S1 of the first substrate 10 and connected to the inductor 11 ;

[0057] The soft magnetic portion 13 is at least located on a side of the inductor 11 away from the first substrate 10 , and the orthographic projection of the soft magnetic portion 13 on the first substrate 10 covers the orthographic projection of the inductor 11 on the first substrate 10 .

[0058] In some embodiments, the first substrate 10 may include but is not limited to an interposer substrate.

[0059] In some embodiments, the interposer substrate may be made of a semiconductor material, which may include at least one elemental semiconductor material, at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art, such as silicon. However, the interposer substrate may also be made of ceramic, glass, or any other suitable material.

[0060] In some embodiments, a first conductive contact 31 and a second conductive contact 32 are provided on the first substrate 10. The first conductive contact 31 is used to realize the connection between multiple functional structures 12 and the first substrate 10, and the second conductive contact 32 is used to connect the first substrate 10 with other structures (for example, the second substrate 20).

[0061] In some embodiments, as Figure 1 As shown, the inductor 11 may include at least a winding coil 112 , such as a metal coil.

[0062] In some embodiments, when the inductor 11 includes a winding coil, forming the inductor 11 includes:

[0063] A metal material layer (not shown) is formed on the first substrate 10, and the metal material layer (not shown) covers the surface of the first substrate 10;

[0064] Perform an etching process to remove part of the metal material layer (not shown) to form a winding coil 112 structure for constituting the inductor 11. The obtained inductor 11 can refer to Figure 1 The structure of the inductor 11.

[0065] In some embodiments, after forming the coil structure, an operation of filling the area where the metal material layer is removed may be further included. Specifically, a dielectric layer may be formed at this location.

[0066] In other embodiments, Figure 13 and Figure 14 As shown, the inductor includes a winding coil 112 and a magnetic core 111 , and the winding coil 112 is wound on the magnetic core 111 .

[0067] Continue to refer Figure 13 and Figure 14In some embodiments, the winding coil 112 includes a first sub-portion 112a, a second sub-portion 112b, and a third sub-portion 112c that are connected to each other, wherein the first sub-portion 112a covers a portion of the surface of the magnetic core 111, and the extension direction of the first sub-portion 112a intersects with the extension direction of the magnetic core 111, the two second sub-portions 112b are connected to the two ends of the first sub-portion 112a and cover the side walls of the magnetic core 111, and the third sub-portion 112c is connected to the ends of the two second sub-portions 112b away from the first sub-portion 112a.

[0068] In some embodiments, forming Figure 13 and Figure 14 The method of the inductor 11 shown may include:

[0069] forming a first metal material layer (not shown), the first metal material layer (not shown) covering the surface of the first substrate 10;

[0070] Etching the first metal material layer (not shown) to form a plurality of first sub-portions 112 a;

[0071] forming a through-hole structure (not shown) exposing both ends of the first sub-portion 112 a and filling the through-hole structure (not shown) with a conductive material to form the second sub-portion 112 b;

[0072] A second metal material layer (not shown) is formed, and the second metal material layer is etched (not shown) to form a third sub-portion 112 c connected to the two second sub-portions 112 b.

[0073] In some embodiments, the inductor 11 may further include a first end electrode 113 and a second end electrode 114. The first end electrode 113 and the second end electrode 114 are located at both ends of the winding coil 112 and are used to connect electrical signals. For example, the first end electrode 113 can be used to connect to the positive pole of the power supply, and the second end electrode 114 can be used to connect to the negative pole of the power supply.

[0074] In some embodiments, the inductor 11 may further include a filling layer (not shown), which is located between the winding coil 112 and the magnetic core 111 .

[0075] In this embodiment, the winding coil 112 spirally surrounds the magnetic core 111 .

[0076] The embodiment of the present disclosure does not specifically limit the structure of the inductor 11 , and the structure can be selected according to actual needs, and is not specifically limited here.

[0077] In Example 14, the inductor 11 can be square, circular, or any other shape that is topologically equivalent to a closed loop. The closed soft magnetic core can form a closed magnetic flux loop, thereby preventing magnetic leakage (which can cause external signal interference and induce eddy currents, resulting in heat generation and increased energy consumption), achieving optimal inductance and minimum energy consumption.

[0078] In some embodiments, the material of the winding coil 111 may include but is not limited to copper wire, tungsten wire, aluminum wire, and other materials made of metal technology.

[0079] In some embodiments, the functional structure 12 may include but is not limited to a chip structure or any other suitable structure. The chip structure may further include at least one of a logic chip, a dynamic random access memory chip (DRAM), a flash memory chip (NAND), a static random access memory chip (SRAM), a read-only memory chip (ROM), a magnetic random access memory chip (MRAM) and a non-volatile memory chip (RRAM) or a combination thereof.

[0080] In some embodiments, the number of layers of the functional structure 12 stacked vertically may include one or more layers. When there are multiple layers, the number may be 2, 3, 4, 5, 6, 7, 8, 9, 10, more than ten, dozens of layers, or even more layers, without specific limitation herein.

[0081] Generally speaking, hard magnetic materials can maintain their magnetization for a reasonable period of time after the magnetic field is removed; generally speaking, soft magnetic materials lose their magnetization quickly after the magnetic field is removed. Generally speaking, whether a material has hard or soft magnetic properties is a relative classification method and is determined by the degree of magnetization required for a specific analysis.

[0082] In practical applications, soft magnetic materials are a class of magnetic materials with low coercivity (Hc) and high magnetic permeability (μ). Their core characteristic is ease of magnetization and demagnetization. Under the influence of an external magnetic field, soft magnetic materials can quickly reach magnetic saturation. When the external field is removed, their remanence (Br) is small, resulting in low hysteresis losses.

[0083] In some embodiments, the magnetic permeability of the soft magnetic material included in the soft magnetic portion 13 may be in the range of 10 2 ~10 5 H / m, it can efficiently concentrate and conduct magnetic flux, reducing energy loss. And after the external magnetic field is removed, the residual magnetism is weak, which can effectively avoid unnecessary magnetic interference.

[0084] In some embodiments, the coercive force of the soft magnetic material included in the soft magnetic portion 13 may range from 0 to 1 kA / m (much lower than that of hard magnetic materials), indicating that the magnetic domain walls inside the material are easily movable and the magnetization direction is easily changed with the external field.

[0085] In some embodiments, the residual magnetization intensity of the soft magnetic material used in the soft magnetic portion 13 may be less than 0.5T, and the saturation magnetic flux density of the soft magnetic material may range from 0.3T to 2.5T.

[0086] In some embodiments, the soft magnetic portion 13 includes at least one of a patch material, a material obtained by adding magnetic powder to a solvent, and a material formed by a semiconductor process, or a combination thereof.

[0087] In some embodiments, the soft magnetic portion 13 may include a soft magnetic patch material, which may further include a soft magnetic portion layer and a packaging layer, wherein the material of the soft magnetic portion layer (core functional layer) may include but is not limited to ferrite, permalloy, amorphous soft magnetic tape material, amorphous soft magnetic powder sintered body, iron silicon boron alloy or composite soft magnetic portion (magnetic powder + polymer), etc., and the packaging material layer may include but is not limited to epoxy resin, silicone, polyimide and other materials compatible with interposer packaging.

[0088] In other embodiments, the soft magnetic portion 13 may include a material obtained by adding magnetic powder to a solvent. For example, a soft magnetic sheet may be formed by dripping a mixture of magnetic powder and an organic solvent onto the coil surface during the packaging process to form a flexible soft magnet. This method has the advantages of flexible processing and low cost. The magnetic material obtained in this way is a flexible soft magnet, which can be obtained by combining soft magnetic powder (such as ferrite or iron powder) with a polymer (such as epoxy resin or silicone rubber) and has the characteristics of flexibility and processability.

[0089] In some embodiments, when the soft magnetic portion 13 may include a drop-cast soft magnetic sheet, a soft magnetic portion 13 with high magnetic permeability may be obtained by increasing the proportion of magnetic powder in the structure.

[0090] In some other embodiments, the soft magnetic portion 13 may also include a material obtained by processes such as material deposition and etching.

[0091] It can be understood that the soft magnetic part 13 can have the functions of providing high magnetic permeability, effectively guiding the magnetic field path, reducing magnetic resistance, reducing eddy current loss, low coercive force, enhancing electromagnetic signals or shielding interference.

[0092] In the soft magnetic portion 13 including the packaging material, the packaging material layer used can be used to protect the soft magnetic portion from oxidation, moisture, damage, and the like.

[0093] In the embodiment of the present disclosure, the arrangement in which the orthographic projection of the soft magnetic portion 13 on the first substrate 10 covers the orthographic projection of the inductor 11 on the first substrate 10 may include the following: in a direction parallel to the plane of the first substrate 10, the size of the soft magnetic portion 13 is larger than the size of the inductor 11, or the size of the soft magnetic portion 13 is equal to the size of the inductor 11, either of which is not specifically limited here.

[0094] However, the relationship between the soft magnetic portion 13 and the inductor 11 may also include the following situation, that is, the soft magnetic portion 13 further includes a structural portion located on the side of the inductor 11 in a direction perpendicular to the first substrate 10, such as the following figure Figure 12 As shown in Figure (3), please refer to the description of this part in other locations for details.

[0095] In this way, through the above-mentioned multiple settings plus the performance advantages of the soft magnetic part, it can be made that during the operation of the inductor 11, the high magnetic permeability of the soft magnetic part 13 and the ability to guide the magnetic field path can increase the inductance value per unit area of ​​the high inductor 11. Its good shielding interference function can help shield the influence of external scattered electromagnetic fields on the inductor 11, thereby reducing communication interference, and the good eddy current suppression can reduce the eddy current heating of the conductor. In addition, because the soft magnetic part also has a high thermal conductivity coefficient, it can also help the semiconductor structure containing the inductor to achieve an effective heat dissipation effect. It helps that the semiconductor structure provided by the embodiment of the present disclosure can have good multiple performances.

[0096] In addition to the above-mentioned cases, other properties of the soft magnetic portion, such as low coercive force, low residual magnetization, and easy magnetization or demagnetization, also contribute to improving the performance of the semiconductor structure provided by the embodiments of the present disclosure.

[0097] In some embodiments, as Figures 1 to 11 As shown, the semiconductor structure S further includes a connection structure 14 located in or on the surface of the first substrate 10, and the connection structure 14 is connected to the functional structure 12. Thus, the connection between the functional structure 12 and the first substrate 10 can be achieved through the connection structure 14. Furthermore, in addition to forming a connection between the functional structure 12 and the first substrate 10, the connection structure 14 can also connect the functional structure 12 and the inductor 11, and can also connect adjacent functional structures 12.

[0098] In some embodiments, the connection structure 14 may include, but is not limited to, interconnects, through-silicon vias, and other structures, which may be flexibly selected based on actual conditions and are not specifically limited herein.

[0099] In the embodiment of the present disclosure, the arrangement relationship between the soft magnetic portion 13 and other structures may include various situations, which will be described below with reference to the accompanying drawings:

[0100] In some embodiments, as Figure 2 、 Figure 3 and Figure 4As shown, a first material layer L1 is formed on the first surface S1 of the first substrate 10, the inductor 11 is located in the first material layer L1, the functional structure 12 and the soft magnetic part 13 are located on the surface of the first material layer L1 away from the first substrate 10, and the soft magnetic part 13 is located between at least part of the functional structure 12.

[0101] In some embodiments, the orthographic projection of the inductor 11 on the first substrate 10 may be located between at least a portion of the orthographic projections of the functional structure 12 on the first substrate 10 .

[0102] It can be understood that, compared with the situation where the orthographic projections of the inductor 11 and the soft magnetic portion 13 on the first substrate 10 are not located between the orthographic projections of at least part of the functional structure 12 on the first substrate 10, this embodiment can reduce the overlap in the vertical direction between the functional structure 12 and the inductor 11 by arranging the position in which the orthographic projection of the soft magnetic portion 13 on the first substrate 10 is located between the orthographic projections of at least part of the functional structure 12 on the first substrate 10, thereby reducing the interference or influence between the functional structure 12 or the inductor 11 during operation.

[0103] In some embodiments, the first material layer L1 may include but is not limited to one of oxide, nitride, and oxynitride materials, or a combination thereof, wherein the oxide material may include but is not limited to silicon oxide, the nitride material may include but is not limited to silicon nitride, and the oxynitride material may include but is not limited to silicon oxynitride.

[0104] In addition, in this embodiment, the functional structure 12 , the soft magnetic portion 13 and the inductor 11 are all arranged on the same surface of the first substrate 10 , which helps to reduce the height and volume of the semiconductor structure and facilitates the miniaturization of the device.

[0105] In this embodiment, the soft magnetic portion 13 can be a soft magnetic patch material or a material obtained by adding magnetic powder to a solvent (such as a drop-in soft magnetic sheet). Figure 1 The soft magnetic portion 13 in the embodiment can be a soft magnetic patch material, and Figure 2 The soft magnetic portion 13 in the embodiment can be a drop-cast soft magnetic sheet.

[0106] It can be understood that compared with the method of forming the soft magnetic portion 13 by steps such as material deposition and etching using semiconductor technology, the method of using soft magnetic patch materials or dripping soft magnetic sheets has the advantages of higher flexibility, simpler method and lower cost.

[0107] Among them, when using soft magnetic patch materials, they can be obtained directly by mounting. The patch material process is mature and the thickness is flexibly adjustable, which can significantly reduce the process complexity in obtaining the semiconductor structure. At the same time, since there is no deposition and etching of metal materials that can easily cause the metal material to move to other positions, this method can also significantly reduce the occurrence of metal cross-contamination and prevent short circuits in the semiconductor structure and other situations that affect semiconductor performance.

[0108] When the soft magnetic portion is obtained by dripping soft magnetic sheets, a mixed colloid of magnetic powder and organic solvent can be used. Specifically, the flexible soft magnetic portion can be obtained by dripping on the surface of the first material layer L1 between adjacent functional structures 12 during the packaging process. This process is flexible and low-cost. In addition, the flexible soft magnetic material is a combination of soft magnetic powder (such as ferrite or iron powder) and polymer (such as epoxy resin or silicone rubber), which has the dual advantages of flexibility and processability.

[0109] In other embodiments, Figure 5 and Figure 6 As shown, a first material layer L1 is formed on the first surface S1 of the first substrate 10, the inductor 11 is located in the first material layer L1, the functional structure 12 is located on the surface of the first material layer L1 away from the first substrate 10, and the soft magnetic portion 13 is located in the first material layer L1, and the orthographic projection on the first substrate 10 is located between the orthographic projections of at least part of the functional structure 12 on the first substrate 10; wherein, the surface of the soft magnetic portion 13 away from the first substrate 10 is not higher than the surface of the first material layer L1 away from the first substrate 10.

[0110] In some embodiments, the upper surface of the soft magnetic portion 13 may be lower than the surface of the first material layer L1 away from the first substrate 10. However, the present invention is not limited thereto. In other embodiments, the upper surface of the soft magnetic portion 13 may also be flush with the upper surface of the first material layer L1, which is not specifically limited herein.

[0111] In this embodiment, the material of the first material layer L1 may be the same as that of the first material layer L1 in the previous embodiment, and detailed description thereof will not be repeated here.

[0112] In this embodiment, the soft magnetic portion 13 is embedded and can be formed by etching the first material layer L1, followed by soft magnetic portion deposition, planarization, and cleaning. However, this is not limiting. In this embodiment, the soft magnetic portion 13 of this embodiment can also be obtained by etching an opening in the first material layer L1 to form the soft magnetic portion 13 and then forming a drop-cast soft magnetic portion. In actual operation, the method for forming the soft magnetic portion 13 can be flexibly selected according to actual conditions and is not specifically limited here.

[0113] In this embodiment, the soft magnetic portion 13 is arranged in the first material layer L1, so that the soft magnetic portion 13 does not occupy the optional arrangement area of ​​the functional structure 12 on the surface of the first substrate 10 while exerting good performance, so that the spacing between the functional structures 12 can be set smaller, which helps to improve the integration.

[0114] In this embodiment, the orthographic projection of the soft magnetic portion 13 on the first substrate 10 is located between the orthographic projections of at least part of the functional structure 12 on the first substrate 10, which can reduce the interference or influence between the functional structure 12 or the inductor 11 during operation.

[0115] In some other embodiments, Figures 7 to 11 As shown, a first material layer L1 is formed on the first surface S1 of the first substrate 10, the functional structure 12 is located on the surface of the first material layer L1 away from the first substrate 10, a second material layer L2 is formed on the second surface S2 of the first substrate 10, the inductor 11 is located in the second material layer L2, and the soft magnetic portion 13 includes at least a first soft magnetic portion 131, which is located on the surface of the second material layer L2 away from the first substrate 10.

[0116] In this embodiment, the material of the first material layer L1 may be the same as the material of the first material layer L1 in the previous embodiment, and will not be described in detail here.

[0117] In some embodiments, the material of the second material layer L2 may be the same as or different from the material of the first material layer L1 , which is not specifically limited herein.

[0118] In some specific embodiments, the material of the second material layer L2 may include but is not limited to oxide, nitride or oxynitride.

[0119] In this embodiment, the soft magnetic portion 13 and the functional structure 12 are disposed on different surfaces of the first substrate 10. This allows for greater regional selectivity when the soft magnetic portion 13 is disposed within its region, allowing for a larger size, thereby providing better conditions for the inductor 11 to function.

[0120] In some embodiments, in the process of obtaining the soft magnetic portion 13 of this embodiment, a large line width process of a packaging factory can be used, so that a larger soft magnetic portion 13 can be obtained. At the same time, in this embodiment, since the soft magnetic portion 13 is disposed on the surface of the first substrate 10 away from the functional structure 12, the risk of metal contamination can be effectively reduced regardless of whether the soft magnetic portion 13 is obtained using a soft magnetic patch material, a dripping soft magnetic sheet, or a semiconductor process (embedded soft magnetic body).

[0121] In some embodiments, as Figures 8 to 11As shown, the soft magnetic portion 13 further includes a second soft magnetic portion 132 . The second soft magnetic portion 132 is located on a side of the inductor 11 away from the first soft magnetic portion 131 .

[0122] In some embodiments, the second soft magnetic portion 132 is located on a side of the inductor 11 away from the first soft magnetic portion 131 , which may include at least one of the following situations:

[0123] The second soft magnetic portion 132 is located on the surface of the first material layer L1 away from the first substrate 10, and the second soft magnetic portion 132 is located between at least part of the functional structures 12 (see the attached FIG. Figure 8 );

[0124] The second soft magnetic portion 132 is located in the first material layer L1, and the orthographic projection of the second soft magnetic portion 132 on the first substrate 10 is located between the orthographic projections of at least part of the functional structure 12 on the first substrate 10, and the surface of the second soft magnetic portion 132 away from the first substrate 10 is not higher than the surface of the first material layer L1 away from the first substrate 10 (for details, please refer to the attached Figure 9 );

[0125] The second soft magnetic portion 132 is located in the second material layer L2. The second soft magnetic portion 132 does not contact the first substrate 10 and is located on a side of the inductor 11 away from the first soft magnetic portion 131 (see the attached FIG. Figure 10 );

[0126] The second soft magnetic portion 132 is at least partially located in the first substrate 10, and the surface of the second soft magnetic portion 132 protrudes or does not protrude from the surface of the first substrate 10 (for details, please refer to the attached Figure 11 ).

[0127] It can be seen that the soft magnetic portion 13 provided in the embodiment of the present disclosure, in addition to providing multiple options in terms of formation method or material type, also provides multiple options in terms of position, and on this basis, further provides multiple options in terms of the number of soft magnetic portions 13. In this way, the semiconductor structure provided by the embodiment of the present disclosure can have a wide range of structural options. In actual operation, the user can flexibly select the desired setting method according to the specific situation, and no specific limitation is made here.

[0128] In some embodiments, in addition to the above-mentioned embodiments, the setting position of the soft magnetic portion 13 can also be selected according to the location source of the electromagnetic field interference in the semiconductor structure. For example, when there is more electromagnetic field interference from the side where the functional structure 12 is located, multiple numbers of soft magnetic portions can be set at multiple positions in the area between the inductor 11 and the functional structure 12.

[0129] In the embodiment of the present disclosure, Figure 12As shown, an embodiment is also provided in which the soft magnetic portion 13 may include multiple sub-portions. The soft magnetic portion 13 provided in this embodiment may be applied in any of the above embodiments.

[0130] like Figure 12 As shown in Figures (1), (2) and (3), the soft magnetic portion 13 includes a first sub-portion 13a extending in a direction parallel to the plane of the first substrate 10 and a second sub-portion 13b extending in a direction perpendicular to the plane of the first substrate 10, and the first sub-portion 13a is connected to the second sub-portion 13b.

[0131] In some embodiments, as Figure 12 As shown in Figure (3), the second sub-section 13b can be arranged around the inductor 11, specifically, it can be arranged in the material layer where the inductor 11 is located, and located in the area between the inductor 11 and other structures. In this way, the impact of other structural components at the same height as the inductor 11 on the performance of the inductor 11 during operation can be reduced.

[0132] In some embodiments, as Figure 1 and Figure 12 As shown in FIG. (2), in order to provide a greater degree of assistance to the function of the inductor 11 as much as possible, the area Q where the connection structure 14 is located when the inductor 11 is connected to other structures (for details, please refer to Figure 1 ) position, the soft magnetic portion 13 can be arranged with two second sub-portions 13b on both sides of the connecting structure 14, and the first sub-portion 13a extends in a direction perpendicular to the extension direction of the connecting structure 14, that is, the first sub-portion 13a spans the connecting structure 14 and connects the two second sub-portions 13b. In this way, while providing maximum functional assistance to the inductor 11, it does not affect the original layout and setting position of other structures located around it.

[0133] The present disclosure also provides a semiconductor device, such as Figure 2 、 Figure 3 、 Figure 5 and Figures 7 to 11 As shown, the semiconductor device includes:

[0134] The second substrate 20 and the semiconductor structure S in any of the above embodiments, the semiconductor structure S is located on the second substrate 20 and connected to the second substrate 20 .

[0135] In some embodiments, a third conductive contact 21 may be further provided on a side of the second substrate 20 away from the semiconductor structure S. The third conductive contact 21 is used for electrical connection between the semiconductor device and other structures.

[0136] In some embodiments, the second substrate 20 is a packaging substrate, for example, a printed circuit board, and the connection structure 14 (which may be a through-silicon via structure) located in the first substrate 10 and the second conductive contact 32 are used to realize signal transmission between the structure located on the intermediate substrate and the second substrate 20.

[0137] In some embodiments, the semiconductor device further includes an encapsulation compound layer 40 .

[0138] In some embodiments, the material of the encapsulation compound layer 40 may include, but is not limited to, epoxy resin, phenolic resin, polyimide, silicone, or spin-on silica glass, etc. The encapsulation compound 40 can protect the semiconductor device from external dust, moisture, and mechanical shock, thereby improving the reliability of the package structure.

[0139] The various technical features in the technical solutions described in the various embodiments provided in this disclosure can be arbitrarily combined without conflict.

[0140] The above description is merely a preferred embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A semiconductor structure, characterized in that The semiconductor structure comprises: a first substrate, the first substrate comprising a first surface and a second surface oppositely disposed; an inductor, wherein the inductor is located on the first surface or the second surface of the first substrate; a plurality of functional structures, wherein the plurality of functional structures are located on the first surface of the first substrate and connected to the inductor; The soft magnetic portion is located at least on a side of the inductor away from the first substrate, and an orthographic projection of the soft magnetic portion on the first substrate covers an orthographic projection of the inductor on the first substrate.

2. The semiconductor structure according to claim 1, wherein: The soft magnetic portion includes a first sub-portion extending in a direction parallel to the plane of the first substrate and a second sub-portion extending in a direction perpendicular to the plane of the first substrate, and the first sub-portion is connected to the second sub-portion.

3. The semiconductor structure according to claim 1, wherein: A first material layer is formed on the first surface of the first substrate, the inductor is located in the first material layer, the functional structure and the soft magnetic part are located on the surface of the first material layer away from the first substrate, and the soft magnetic part is located between at least part of the functional structure.

4. The semiconductor structure according to claim 1, wherein: A first material layer is formed on the first surface of the first substrate, the inductor is located in the first material layer, the functional structure is located on the surface of the first material layer away from the first substrate, the soft magnetic portion is located in the first material layer, and the orthographic projection of the soft magnetic portion on the first substrate is located between the orthographic projections of at least part of the functional structure on the first substrate; wherein the surface of the soft magnetic portion away from the first substrate is not higher than the surface of the first material layer away from the first substrate.

5. The semiconductor structure according to claim 1, wherein: A first material layer is formed on the first surface of the first substrate, the functional structure is located on the surface of the first material layer away from the first substrate, a second material layer is formed on the second surface of the first substrate, the inductor is located in the second material layer, the soft magnetic portion includes at least a first soft magnetic portion, and the first soft magnetic portion is located on the surface of the second material layer away from the first substrate.

6. The semiconductor structure according to claim 5, wherein: The soft magnetic portion further includes a second soft magnetic portion, and the second soft magnetic portion is located on a side of the inductor away from the first soft magnetic portion.

7. The semiconductor structure according to claim 6, wherein: The second soft magnetic portion is located on a side of the inductor away from the first soft magnetic portion, which may include at least one of the following situations: The second soft magnetic portion is located on a surface of the first material layer away from the first substrate, and the second soft magnetic portion is located between at least a portion of the functional structures; The second soft magnetic portion is located in the first material layer, and an orthographic projection of the second soft magnetic portion on the first substrate is located between orthographic projections of at least part of the functional structure on the first substrate, and a surface of the second soft magnetic portion away from the first substrate is no higher than a surface of the first material layer away from the first substrate; The second soft magnetic portion is located in the second material layer, and the second soft magnetic portion does not contact the first substrate; or The second soft magnetic portion is at least partially located in the first substrate, and a surface of the second soft magnetic portion protrudes or does not protrude from a surface of the first substrate.

8. The semiconductor structure according to any one of claims 1 to 7, wherein: The soft magnetic part includes at least one of a patch material, a material obtained by adding magnetic powder to a solvent, and a material formed by a semiconductor process, or a combination thereof.

9. The semiconductor structure according to claim 8, wherein: The inductor includes a winding coil and a magnetic core, wherein the winding coil is wound around the magnetic core.

10. The semiconductor structure according to claim 9, wherein: The semiconductor structure further includes: a connection structure located in the first substrate or on the surface of the first substrate, wherein the connection structure is connected to the functional structure.

11. A semiconductor device, characterized in that: Include: A second substrate and the semiconductor structure according to any one of claims 1 to 10, wherein the semiconductor structure is located on the second substrate and connected to the second substrate.

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