Perovskite solar cell and preparation method and application thereof

Abstract

The invention provides a perovskite solar cell. The perovskite solar cell comprises a bottom electrode layer, a hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer which are stacked in sequence. According to the invention, the graphene layer is arranged between the electron transport layer and the buffer layer, so that the buffer layer can be guided to form a more compact structure with fewer defects, the electrical contact between the electron transport layer and the buffer layer is improved, the possibility of stripping of the buffer layer is reduced, the perovskite layer can be effectively protected from being eroded, and the internal stress in the assembly is reduced.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, specifically to solar cells, and in particular to a perovskite solar cell and a preparation method and application thereof. Background Art

[0002] Organic-inorganic hybrid perovskite solar cells have attracted widespread attention from academia and industry due to their many advantages, including adjustable band gaps and low cost. Currently, the highest photoelectric conversion efficiency of single-junction perovskite solar cells has increased from 3.8% in 2009 to 26.1% in 2023.

[0003] Under the dual-carbon environment, the industrialization of perovskites has been significantly accelerated. The use of a buffer layer in perovskite solar cells has become an effective means of improving module performance and stability. However, the oxygen vacancy concentration in the buffer layer is difficult to precisely control. Excessive or insufficient oxygen vacancies can adversely affect the electrical properties of the buffer layer and the interaction between the buffer layer and the perovskite layer, affecting the performance and stability of the cell. Furthermore, during the preparation of the buffer layer, internal stress may be generated due to factors such as the mismatch in thermal expansion coefficients between the film and the substrate, leading to cracks and detachment in the film, affecting the performance and stability of the cell. Finally, in inverse perovskite solar cells, when the cell operates at higher temperatures or undergoes thermal cycling, the interface between the buffer layer and the perovskite layer, as well as the structure within the buffer layer, may change, affecting the performance and stability of the cell.

[0004] CN118829253A discloses a perovskite solar cell and its preparation method. The perovskite solar cell comprises a hole transport layer, a first passivation layer, a second passivation layer, and a perovskite layer, arranged in sequence. The first passivation layer comprises an alkali metal halide, and the second passivation layer comprises a 4-trifluoromethylaniline halide salt compound. The dual passivation layers in this invention synergistically suppress non-radiative recombination at the interface between the hole transport layer and the perovskite in the perovskite solar cell, passivating interface defects and improving the device performance of the perovskite solar cell.

[0005] CN115734622A discloses a perovskite solar cell comprising an interface buffer layer made of a material containing ytterbium. This invention utilizes a material containing ytterbium as the interface buffer layer of the perovskite solar cell. Due to the low work function of the material containing ytterbium, it facilitates the formation of ohmic contact, facilitates electron extraction, reduces carrier recombination at the interface, and achieves high photoelectric conversion efficiency. Furthermore, due to the chemical and thermal stability of the material containing ytterbium, the stability, particularly the thermal stability, of the perovskite solar cell device is significantly improved.

[0006] CN111864075A discloses a perovskite solar cell. By adding a titanium dioxide / molybdenum oxide (TiO2 / MoO3) buffer layer between the hole transport layer or electron transport layer and the electrode, this prevents reactions between the electrode and the perovskite hole transport layer and absorption layer, which could affect electrode performance. Furthermore, the titanium dioxide / molybdenum oxide buffer layer acts as a barrier to water and oxygen, improving the stability of the perovskite solar cell.

[0007] To this end, it is of great significance to provide a perovskite solar cell with good electrical contact and good stability. Summary of the Invention

[0008] In response to the shortcomings of the prior art, the present invention aims to provide a perovskite solar cell, its preparation method, and its application. The present invention provides a graphene layer between the electron transport layer and the buffer layer. The flaky structure of the graphene layer facilitates the formation of a denser, less defective structure in the buffer layer, improving the electrical contact between the electron transport layer and the buffer layer. Furthermore, a strong interfacial adsorption effect is formed between the graphene layer and the buffer layer, reducing the possibility of delamination and improving the ability to resist internal stress. Furthermore, the chemical stability and high-temperature resistance of the graphene layer effectively protect the perovskite layer from corrosion, reducing internal stress within the component.

[0009] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0010] In a first aspect, the present invention provides a perovskite solar cell, which includes a bottom electrode layer, a hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer stacked in sequence.

[0011] The present invention arranges a graphene layer on the surface of the electron transport layer, and uses the graphene layer as the growth substrate of the buffer layer. The surface of the graphene sheet structure is flat and orderly, so that the buffer layer grown thereon can grow in an orderly and unidirectional manner, greatly reducing the pre-factors for the generation of defects, and finally obtaining a buffer layer with better density and fewer defects; graphene has excellent electrical properties and high carrier mobility, and a buffer layer is prepared on its surface to form good electrical contact; at the same time, the presence of oxygen vacancies in the buffer layer may also interact with the functional groups of the graphene to form an interface state that is more conducive to electron transport, synergistically enhancing the electrical properties of the material, and a strong interface adsorption effect is formed between the graphene and the buffer layer, reducing the possibility of peeling and improving the ability to resist internal stress. Finally, the chemical stability and high temperature resistance of the graphene itself can effectively protect the perovskite layer from corrosion and reduce the internal stress in the component.

[0012] Preferably, the material of the graphene layer includes graphene oxide and / or layered graphene.

[0013] Preferably, the material of the buffer layer includes any one of tin oxide, IWO (indium tungsten oxide), ZnO (zinc oxide) or AZO (aluminum-doped zinc oxide).

[0014] The present invention uses the above-mentioned material as a buffer layer, which works in conjunction with the graphene layer, which is beneficial to improving the overall chemical stability and high-temperature resistance of the perovskite solar cell.

[0015] For example, when the material of the buffer layer is tin oxide, both graphene and tin oxide have good chemical corrosion resistance. The uniform and dense tin oxide buffer layer covering the surface of graphene oxide can further enhance the overall chemical stability of the component, making it less likely to undergo chemical reactions and performance degradation in different environments, thereby extending the service life of the perovskite solar cell. Moreover, graphene and tin oxide can withstand higher temperatures to a certain extent. The thermal stability of the composite material formed by the combination of the two will also be improved in a high temperature environment, reducing the risk of material performance degradation and structural damage due to factors such as thermal expansion and thermal stress, and maintaining the performance stability of the component to a greater extent.

[0016] For another example, when the buffer layer is IWO, the tungsten doping in IWO can effectively improve the oxidation resistance of indium oxide, making it more resistant to high temperatures. It also has good tolerance to organic solvents such as isopropyl alcohol and chlorobenzene, and combined with the graphene layer, it can significantly enhance the chemical stability and high-temperature resistance of the component.

[0017] Preferably, the material of the electron transport layer includes C60 and / or PCBM.

[0018] Preferably, the thickness of the graphene layer is 0.3 nm-1.7 nm.

[0019] Preferably, the buffer layer has a thickness of 10 nm to 40 nm.

[0020] In a second aspect, the present invention provides a method for preparing a perovskite solar cell as described in the first aspect, the preparation method comprising:

[0021] A hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer are sequentially prepared on the surface of the bottom electrode layer.

[0022] Preferably, the method for preparing the graphene layer comprises spin coating a graphene dispersion onto the surface of the second carrier transport layer to obtain the graphene layer.

[0023] Preferably, the method for preparing the buffer layer comprises depositing the buffer layer material on the surface of the graphene layer by atomic layer deposition.

[0024] Preferably, the preparation temperature of the atomic layer deposition is 100°C-120°C.

[0025] Preferably, the preparation methods of the hole transport layer and the electron transport layer each independently include magnetron sputtering and / or thermal evaporation.

[0026] Preferably, the preparation method of the perovskite film layer comprises spin coating.

[0027] Preferably, the preparation method of the electrode layer includes magnetron sputtering.

[0028] In a third aspect, the present invention provides an application of the perovskite solar cell as described in the first aspect, wherein the perovskite solar cell is applied in the field of photovoltaic power generation.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] The present invention arranges a graphene layer between the electron transport layer and the buffer layer. The flaky structure of the graphene layer is conducive to guiding the buffer layer to form a denser structure with fewer defects, thereby improving the electrical contact between the electron transport layer and the buffer layer. At the same time, a strong interface adsorption effect is formed between the graphene layer and the buffer layer, which reduces the possibility of peeling and improves the ability to resist internal stress. In addition, the chemical stability and high temperature resistance of the graphene layer itself can effectively protect the perovskite layer from corrosion and reduce the internal stress in the component. DETAILED DESCRIPTION

[0031] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0032] In a specific embodiment, the present invention provides a perovskite solar cell, which includes a bottom electrode layer, a hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer stacked in sequence.

[0033] The present invention arranges a graphene layer on the surface of the electron transport layer and uses the graphene layer as the growth substrate of the buffer layer. The surface of the graphene sheet structure is flat and orderly, so that the buffer layer grown thereon can grow in an orderly and unidirectional manner, greatly reducing the pre-factors for defect generation, and ultimately obtaining a buffer layer with better density and fewer defects; graphene has excellent electrical properties and high carrier mobility, and preparing a buffer layer on its surface can form good electrical contact; at the same time, the presence of oxygen vacancies in the buffer layer may also interact with the functional groups of the graphene to form an interface state that is more conducive to electron transport, synergistically enhancing the electrical properties of the material, and forming a strong interface adsorption effect between the graphene and the buffer layer, reducing the possibility of peeling and improving the ability to resist internal stress. Finally, the chemical stability and high temperature resistance of the graphene itself can effectively protect the perovskite layer from corrosion and reduce the internal stress in the component.

[0034] In some embodiments, the buffer layer is made of any one of tin oxide, IWO (indium tungsten oxide), ZnO (zinc oxide), and AZO (aluminum-doped zinc oxide).

[0035] In the present invention, when the material of the buffer layer is tin oxide, both graphene and tin oxide have good chemical corrosion resistance. The uniform and dense tin oxide buffer layer covers the surface of the graphene oxide, which can further enhance the chemical stability of the material as a whole, making it less likely to undergo chemical reactions and performance degradation in different environments, thereby extending the service life of the perovskite solar cell. In addition, graphene and tin oxide can withstand higher temperatures to a certain extent. The thermal stability of the composite material formed by the combination of the two will also be improved in a high temperature environment, reducing the risk of material performance degradation and structural damage due to factors such as thermal expansion and thermal stress, thereby maintaining the performance stability of the component to a greater extent.

[0036] In some embodiments, the material of the graphene layer includes graphene oxide and / or layered graphene.

[0037] In some embodiments, the material of the electron transport layer includes C60 and / or PCBM.

[0038] In the present invention, the thickness of the graphene layer affects the interface resistance and light utilization rate. If the graphene layer is too thick, the interface resistance is too high, which affects carrier transmission, increases light loss, and impairs current.

[0039] In some embodiments, the thickness of the graphene layer is 0.3 nm-1.7 nm, for example, it can be 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1.0 nm, 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm, 1.6 nm or 1.7 nm, including but not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0040] In some embodiments, the thickness of the buffer layer is 10 nm-40 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm or 40 nm, including but not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0041] In the present invention, the thickness of the bottom electrode layer, hole transport layer, perovskite film layer, electron transport layer and electrode layer are all prior art and are not specifically limited. For example, the thickness of the perovskite film layer can be 300nm-600nm, for example, it can be 300nm, 350nm, 400nm, 450nm, 500nm, 550nm or 600nm, including but not limited to the listed values, and other values ​​not listed in the numerical range are also applicable; the thickness of the hole transport layer can be 7nm-14nm, for example, it can be 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm or 14nm, including but not limited to the listed values, and other values ​​not listed in the numerical range are also applicable. ; The thickness of the electron transport layer is 15nm-30nm, for example, it can be 15nm, 17nm, 19nm, 21nm, 23nm, 25nm, 27nm or 29nm, including but not limited to the listed values, and other values ​​not listed within the numerical range are also applicable; the thickness of the electrode layer can be 80nm-150nm, for example, it can be 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm or 150nm, including but not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0042] In the perovskite solar cell provided by the present invention, the materials of the bottom electrode layer, the hole transport layer, the perovskite film layer and the electrode layer are all prior art. For example, the bottom electrode layer comprises any one of fluorine-doped tin oxide or indium tin oxide; the material of the electrode layer comprises any one of silver, aluminum or copper; the material of the perovskite film layer comprises ABX3 perovskite, wherein the A position can be a methylammonium ion (CH3NH3 + , referred to as MA + ), formamidinium ion (NH2CH=NH2 + , referred to as FA+ ), cesium ions (Cs + ) and other organic or inorganic cations; the B site is mainly lead ions (Pb 2+ ), tin ions (Sn 2+ ) and other divalent metal cations; the X position is the fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ) and other halogen anions; the material of the hole transport layer includes any one of nickel oxide, copper iodide, cuprous thiocyanate or molybdenum oxide.

[0043] In another specific embodiment, the present invention further provides a method for preparing a perovskite solar cell, the method comprising:

[0044] A hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer are sequentially prepared on the surface of the bottom electrode layer.

[0045] In some embodiments, the method for preparing the graphene layer includes spin-coating a graphene dispersion onto the surface of the second carrier transport layer to obtain the graphene layer.

[0046] In some embodiments, the method for preparing the buffer layer includes depositing the buffer layer material on the surface of the graphene layer by atomic layer deposition.

[0047] In some embodiments, the preparation temperature of the atomic layer deposition is 100°C-120°C, for example, it can be 100, 102, 104, 106, 108, 110, 112, 114, 116, 118 or 120, including but not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0048] In some embodiments, the preparation methods of the hole transport layer and the electron transport layer each independently include magnetron sputtering and / or thermal evaporation.

[0049] In some embodiments, the method for preparing the perovskite film layer comprises spin coating.

[0050] In some embodiments, the electrode layer is prepared by a method comprising magnetron sputtering.

[0051] It should be noted that in the preparation process of the perovskite solar cell provided by the present invention, the method of processing the substrate, and the magnetron sputtering method or thermal evaporation method used to prepare the first carrier transport layer, the second carrier transport layer and the electrode layer are all existing technologies, and the present invention no longer specifically limits the preparation process parameters.

[0052] In another specific embodiment, the present invention further provides an application of a perovskite solar cell, wherein the perovskite solar cell is applied in the field of photovoltaic power generation.

[0053] Example 1

[0054] This embodiment provides a perovskite solar cell, which includes an FTO bottom electrode layer, a nickel oxide hole transport layer with a thickness of 11 nm, a perovskite film layer with a thickness of 350 nm, a C60 electron transport layer with a thickness of 15 nm, and a copper electrode layer with a thickness of 100 nm, which are stacked in sequence; the surface of the C60 electron transport layer on a side away from the perovskite film layer is modified with a graphene oxide layer with a thickness of 0.7 nm; and a tin oxide buffer layer with a thickness of 18 nm is provided on the surface of the graphene oxide layer on a side away from the C60 electron transport layer.

[0055] The preparation method of the perovskite solar cell comprises:

[0056] ① Magnetron sputtering a layer of nickel oxide on a cleaned FTO substrate to obtain a hole transport layer;

[0057] ② Wet spin coating on the surface of the hole transport layer to obtain a perovskite film;

[0058] ③ Thermally evaporate C60 on the perovskite layer to obtain an electron transport layer;

[0059] ④ Spin-coating graphene oxide slurry on the electron transport layer to obtain a graphene oxide film layer;

[0060] ⑤ Prepare tin oxide on the graphene oxide layer by atomic layer deposition to obtain a buffer layer; the temperature of the atomic layer deposition is 110°C;

[0061] ⑥ The back electrode copper is produced by magnetron sputtering.

[0062] Example 2

[0063] This embodiment provides a perovskite solar cell, which includes an ITO bottom electrode layer, a nickel oxide hole transport layer with a thickness of 14 nm, a perovskite film layer with a thickness of 600 nm, a PCBM electron transport layer with a thickness of 30 nm, and a copper electrode layer with a thickness of 150 nm, which are stacked in sequence; the surface of the C60 electron transport layer on the side away from the perovskite film layer is modified with a flaky graphene layer with a thickness of 1.7 nm; and a tin oxide buffer layer with a thickness of 40 nm is provided on the surface of the flaky graphene layer on the side away from the C60 electron transport layer.

[0064] The preparation method of the perovskite solar cell comprises:

[0065] ① Magnetron sputtering a layer of nickel oxide on a cleaned FTO substrate to obtain a hole transport layer;

[0066] ② Wet spin coating on the surface of the hole transport layer to obtain a perovskite film;

[0067] ③ Thermally evaporate C60 on the perovskite layer to obtain an electron transport layer;

[0068] ④ Spin-coating graphene oxide slurry on the electron transport layer to obtain a graphene oxide film layer;

[0069] ⑤ Prepare tin oxide on the graphene oxide layer by atomic layer deposition to obtain a buffer layer; the temperature of the atomic layer deposition is 100°C;

[0070] ⑥ The back electrode copper is produced by magnetron sputtering.

[0071] Example 3

[0072] This embodiment provides a perovskite solar cell, which includes a glass bottom electrode layer, a nickel oxide hole transport layer with a thickness of 7 nm, a perovskite film layer with a thickness of 300 nm, a PCBM electron transport layer with a thickness of 20 nm, and a copper electrode layer with a thickness of 80 nm, which are stacked in sequence; the surface of the C60 electron transport layer on a side away from the perovskite film layer is modified with a flaky graphene layer with a thickness of 0.3 nm; and a tin oxide buffer layer with a thickness of 10 nm is provided on the surface of the flaky graphene layer on a side away from the C60 electron transport layer.

[0073] The preparation method of the perovskite solar cell comprises:

[0074] ① Magnetron sputtering a layer of nickel oxide on a cleaned FTO substrate to obtain a hole transport layer;

[0075] ② Wet spin coating on the surface of the hole transport layer to obtain a perovskite film;

[0076] ③ Thermally evaporate C60 on the perovskite layer to obtain an electron transport layer;

[0077] ④ Spin-coating a flake graphene slurry on the electron transport layer to obtain a flake graphene film layer;

[0078] ⑤ Prepare tin oxide on the graphene sheet by atomic layer deposition to obtain a buffer layer; the temperature of the atomic layer deposition is 120℃;

[0079] ⑥ The back electrode copper is produced by magnetron sputtering.

[0080] Example 4

[0081] This embodiment provides a perovskite solar cell, which is the same as that of Example 1 except that the thickness of the graphene layer is 2 nm.

[0082] Example 5

[0083] This embodiment provides a perovskite solar cell. The perovskite solar cell is the same as that in embodiment 1 except that the thickness of the buffer layer is 8 nm.

[0084] Example 6

[0085] This embodiment provides a perovskite solar cell. The perovskite solar cell is the same as that in embodiment 1 except that the thickness of the buffer layer is 45 nm.

[0086] Comparative Example 1

[0087] This comparative example provides a perovskite solar cell, which differs from Example 1 only in that no graphene oxide layer is provided on the surface of the C60 electron transport layer.

[0088] The difference between the preparation method of the perovskite solar cell and the preparation method in Example 1 is that tin oxide is directly deposited on the surface of the C60 electron transport layer by atomic layer.

[0089] Comparative Example 2

[0090] This comparative example provides a perovskite solar cell, which differs from Example 1 in that a graphene oxide layer is disposed between the electron transport layer and the perovskite film layer.

[0091] The preparation method of the perovskite solar cell comprises:

[0092] ① Magnetron sputtering a layer of nickel oxide on a cleaned FTO substrate to obtain a hole transport layer;

[0093] ② Wet spin coating on the surface of the hole transport layer to obtain a perovskite film;

[0094] ③ Spin-coating graphene oxide slurry on the perovskite film layer to obtain a graphene oxide film layer;

[0095] ④ Thermally evaporate C60 on the graphene oxide film to obtain an electron transport layer;

[0096] ⑤ Prepare tin oxide on the electron transport layer by atomic layer deposition to obtain a buffer layer; the temperature of the atomic layer deposition is 110°C;

[0097] ⑥ The back electrode copper is produced by magnetron sputtering.

[0098] Performance testing:

[0099] The present invention conducted IV tests on the perovskite solar cells provided in all the above embodiments and comparative examples. The test results are shown in Table 1.

[0100] Table 1

[0101]

[0102] According to the data in Table 1, the present invention improves the electrical contact between the electron transport layer and the buffer layer by arranging a graphene layer between the electron transport layer and the buffer layer. At the same time, a strong interface adsorption effect is formed between the graphene layer and the buffer layer, which reduces the possibility of peeling and improves the ability to resist internal stress. The chemical stability and high temperature resistance of the graphene layer itself can effectively protect the perovskite layer from corrosion and reduce the internal stress in the component. The solar cell provided by the present invention has good electrical properties.

[0103] According to the test data of Example 1 and Comparative Example 1, if the graphene oxide layer is not provided on the surface of the C60 electron transport layer, the current, open circuit voltage and fill factor of the solar cell are significantly reduced.

[0104] According to the test data of Example 1 and Comparative Example 2, if the graphene oxide layer is disposed between the electron transport layer and the perovskite film layer but not between the electron transport layer and the buffer layer, the good electrical performance in Example 1 cannot be achieved.

[0105] The applicant declares that the above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. A perovskite solar cell, characterized in that The perovskite solar cell includes a bottom electrode layer, a hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer which are stacked in sequence.

2. The perovskite solar cell according to claim 1, wherein The material of the graphene layer includes graphene oxide and / or layered graphene; Preferably, the material of the buffer layer includes any one of tin oxide, IWO, ZnO or AZO; Preferably, the material of the electron transport layer includes C60 and / or PCBM.

3. The perovskite solar cell according to claim 1 or 2, wherein: The thickness of the graphene layer is 0.3nm-1.7nm.

4. The perovskite solar cell according to any one of claims 1 to 3, wherein The thickness of the buffer layer is 10 nm-40 nm.

5. A method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that: The preparation method comprises: A hole transport layer, a perovskite film layer, an electron transport layer, a graphene layer, a buffer layer and an electrode layer are sequentially prepared on the surface of the bottom electrode layer.

6. The preparation method according to claim 5, wherein The method for preparing the graphene layer comprises spin coating a graphene dispersion onto the surface of the second carrier transport layer to obtain the graphene layer.

7. The preparation method according to claim 5 or 6, characterized in that The preparation method of the buffer layer comprises depositing the buffer layer material on the surface of the graphene layer by atomic layer deposition.

8. The preparation method according to claim 7, wherein The preparation temperature of the atomic layer deposition is 100° C.-120° C.

9. The preparation method according to any one of claims 5 to 8, characterized in that The preparation methods of the hole transport layer and the electron transport layer each independently include magnetron sputtering and / or thermal evaporation; Preferably, the method for preparing the perovskite film layer comprises spin coating; Preferably, the preparation method of the electrode layer includes magnetron sputtering.

10. An application of the perovskite solar cell according to any one of claims 1 to 4, characterized in that: The perovskite solar cell is used in the field of photovoltaic power generation.

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