Narrow-band organic photomultiplier detector based on one-dimensional photonic crystal filter

Abstract

The invention relates to the technical field of high-precision spectrum detection and optical communication, in particular to a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter. A cathode layer in the narrow-band organic photomultiplier detector is connected with an active layer, and the active layer is composed of an acceptor material layer and a donor material layer; the interface adjusting layer is composed of a hole transport layer and an interface modification layer, one end of the anode layer is connected with the interface adjusting layer, and the other end is connected with the one-dimensional photonic crystal filter. The one-dimensional photonic crystal filter adopts a periodic structure, high-refractive-index material titanium dioxide and low-refractive-index material silicon dioxide which are periodically repeated are alternately arranged, and the sequence of the titanium dioxide and the silicon dioxide is changed after a period. According to the invention, the one-dimensional photonic crystal filter is coupled on the photomultiplier detector, so that the responsible spectral range can be further narrowed, and meanwhile, the high external quantum efficiency is kept, thereby effectively solving the technical problem that the high external quantum efficiency and the narrow spectral response of the existing narrow-band detector cannot be considered at the same time.

Description

Technical Field

[0001] The present invention relates to the technical field of photoelectric detectors, in particular to a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter. Background Art

[0002] Narrowband organic photomultiplier detectors (PMDs) optimize the response sensitivity within a specific wavelength range and achieve narrowband response by adding filters to the photodetector. This method is widely adopted due to its advantages such as ease of operation, flexibility, high selectivity, and good compatibility with existing equipment. However, this method not only increases device complexity and limits the integration of photodetector arrays, but more importantly, the introduction of filters significantly reduces the detector's external quantum efficiency—its bandpass characteristics cause the majority of incident photons to be filtered out, directly affecting the device's actual detection sensitivity.

[0003] Chinese Patent Publication No. CN115274895B discloses a silicon photomultiplier detector (SPMD) comprising a detector body comprising an APD array formed by integrating multiple APD cells on a substrate. Each APD cell is connected in series with an avalanche quenching resistor. Additional APD cells are disposed around the periphery of the detector body. The surfaces of all APD cells are connected by a uniform, continuous heavily doped silicon conductive layer, above which is an insulating dielectric layer. A front electrode, located on the front surface of the insulating dielectric layer, comprises parallel metal strips or a grid of perpendicular metal strips, and one or more metal lead electrodes connected to the metal strips. A back electrode, located on the outer side of the silicon substrate behind the entire silicon photomultiplier detector, comprises through-holes at the top corners of the insulating dielectric layer corresponding to the APD cells. The metal strips of the front electrode completely cover the through-holes and form ohmic contacts with the heavily doped silicon conductive layer beneath the through-holes. However, this approach still presents challenges with device complexity, limiting the integration density of the photodetector array. Therefore, this study employs a multiplying organic photodetector as the core component. This type of device can achieve carrier multiplication effects of up to 10^3 through an internal gain mechanism. Although the addition of an optical filter will still cause a decrease in external quantum efficiency, thanks to the improvement in quantum efficiency brought about by the multiplication effect, its absolute efficiency after filtering is still significantly higher than that of conventional non-multiplication photodetectors (usually increased by 1-2 orders of magnitude). This characteristic makes it possible to maintain a sufficiently high photoelectric responsivity while ensuring narrowband selectivity, providing an effective path to resolve the contradiction between device complexity and performance loss. Therefore, the development of high-performance bandpass filters that can be directly coupled to multiplication photodetectors to further improve the overall performance of narrowband detection remains a key technical challenge that needs to be overcome in this field. Summary of the Invention

[0004] To this end, the present invention provides a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter to overcome the problems in the prior art such as low photoelectric response due to limitations in the device complexity of the photomultiplier detector and the integration of the photodetector array, and the contradiction between device complexity and performance loss.

[0005] To achieve the above object, the present invention provides a narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter, comprising:

[0006] A narrowband organic photomultiplier detector comprises a cathode layer, an active layer, an interface adjustment layer, and an anode layer, wherein one end of the detector close to the anode layer is coupled to a one-dimensional photonic crystal filter for narrowing the responsive spectral range;

[0007] The cathode layer is connected to the acceptor material layer in the active layer and serves as an electron collector;

[0008] The active layer is composed of an acceptor material layer and a donor material layer, wherein the end of the active layer close to the acceptor material layer is connected to the cathode layer, and the end of the active layer close to the donor material layer is connected to the interface modification layer, and is used to absorb light of a specific wavelength, generate excitons and separate them into charges;

[0009] The interface adjustment layer consists of an interface modification layer and a hole transport layer. The end of the interface adjustment layer close to the interface modification layer is connected to the donor material layer in the active layer. The hole transport layer is connected to the anode layer and is used to adjust energy level matching, promote hole transport, block electrons, and adjust the distribution of light in the active layer.

[0010] An acceptor material layer, one end of which is connected to the cathode layer and the other end is connected to the donor material layer in the active layer, and is used to receive electrons from the excitons in the donor material, promote charge separation, form free carriers, and thus generate photocurrent;

[0011] A donor material layer, one end of which is connected to the acceptor material layer in the active layer and the other end of which is connected to the interface modification layer in the interface adjustment layer, for absorbing photons and generating excitons;

[0012] An interface modification layer, one end of which is connected to the donor material layer in the active layer and the other end is connected to the hole transport layer in the interface adjustment layer, and is used to prevent the interface chemical reaction between the hole transport layer and the active layer, increase the work function of the hole transport layer, and control charge injection;

[0013] The hole transport layer has one end connected to the interface modification layer in the interface adjustment layer and the other end connected to the anode layer, and is used to provide a hole conduction channel, block electron transmission, and improve hole mobility;

[0014] The anode layer has one end connected to the hole transport layer in the interface adjustment layer and the other end connected to the one-dimensional photonic crystal filter, and is used for light transmission, conductivity, and serves as a hole collector and a light incident window;

[0015] A one-dimensional photonic crystal filter is coupled to an end of a narrowband organic photomultiplier detector close to the anode layer to achieve narrowband response.

[0016] Furthermore, the preparation materials of the one-dimensional photonic crystal filter narrowband organic photomultiplier detector include:

[0017] [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene, poly(3-hexylthiophene), PEDOT:PSS, titanium dioxide target, silicon dioxide target, trimethylaluminum Al(CH3)3, water (H2O), aluminum, cleaning milk, dishwashing liquid, deionized water, acetone, isopropyl alcohol, conductive glass.

[0018] Furthermore, the amount of the materials used in preparing the one-dimensional photonic crystal filter narrowband organic photomultiplier detector includes: the [6,6]-phenyl C 71 The amount of -butenyl perfluorobenzo[6,6]benzo-fullerene used is M1, 0.95 mg≤M1≤1.05 mg.

[0019] Furthermore, the method for preparing the one-dimensional photonic crystal filter-based narrowband organic photomultiplier detector includes:

[0020] Step S1, collecting materials for preparing a narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter to obtain preliminary materials;

[0021] Step S2, after obtaining the preliminary material, poly (3-hexylthiophene) and [6,6] -phenyl C 71 -butenyl perfluorobenzo[6,6]benzo-fullerene were pretreated to prepare active layer solution;

[0022] Step S3, after obtaining the active layer solution, performing ultrasonic cleaning on the ITO glass substrate to obtain an ultrasonically cleaned ITO glass substrate;

[0023] Step S4, placing the ultrasonically cleaned ITO glass substrate in a vacuum magnetron sputtering furnace, performing magnetron sputtering on a first target horizontal surface of the ultrasonically cleaned ITO glass substrate, and obtaining a one-dimensional photonic crystal filter alternating structure on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate;

[0024] Step S5, after obtaining the one-dimensional photonic crystal filter alternating structure, placing the ultrasonically cleaned ITO glass substrate in a second vacuum glove box, performing spin coating and deposition on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate, obtaining an interface adjustment layer on the magnetron sputtering-coated ITO glass substrate, and combining the interface adjustment layer and the magnetron sputtering-coated ITO glass substrate to obtain a second-coated ITO glass substrate;

[0025] Step S6, transferring the second-coated ITO glass substrate to a third vacuum glove box, and performing spin coating of an active layer on the second-coated ITO glass substrate to obtain a third-coated ITO glass substrate;

[0026] Step S7: placing the third-coated ITO glass substrate in a vacuum evaporation furnace to evaporate an aluminum cathode to obtain a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter.

[0027] Furthermore, in step S1, when collecting the preparation materials of the narrowband organic photomultiplier detector based on the one-dimensional photonic crystal filter, the preparation materials of the narrowband organic photomultiplier detector based on the one-dimensional photonic crystal filter are collected according to the preset preparation material collection standard.

[0028] Furthermore, in the step S2, poly (3-hexylthiophene) and [6,6]-phenyl C are treated according to the active layer solution pretreatment method. 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene was pretreated.

[0029] Furthermore, in step S3, the method of ultrasonically cleaning the ITO glass substrate includes:

[0030] Step S31, placing the ITO glass substrate in a detergent solution containing surfactant, calcium carbonate, organic acid, softened water, vitamin E ester, and lemon essence and ultrasonically treating for 45 minutes;

[0031] Step S32: Wearing disposable gloves, rinse the first target horizontal surface of the ITO glass substrate and the second target horizontal surface of the ITO glass substrate with deionized water until a water film is formed, thereby obtaining the ITO glass substrate rinsed with deionized water;

[0032] Step S33, placing the ITO glass substrate rinsed with deionized water in an ultrasonic cleaner, adding deionized water, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with deionized water;

[0033] Step S34, placing the ITO glass substrate ultrasonically cleaned with deionized water back into an ultrasonic cleaner, adding acetone, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with acetone;

[0034] Step S35, placing the ITO glass substrate that has been ultrasonically cleaned with acetone back into an ultrasonic cleaner, adding isopropyl alcohol, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate that has been ultrasonically cleaned with isopropyl alcohol;

[0035] Step S36: placing the ITO glass substrate that has been ultrasonically cleaned with isopropyl alcohol in a plasma cleaning machine for plasma cleaning for 5 minutes to obtain an ultrasonically cleaned ITO glass substrate.

[0036] Furthermore, in the step S4, magnetron sputtering is performed on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate according to the preparation method of the one-dimensional photonic crystal filter.

[0037] Furthermore, in the step S5, spin coating and deposition are performed on the second target horizontal surface of the ITO glass substrate after ultrasonic cleaning according to a method for preparing an interface adjustment layer, and the method for preparing the interface adjustment layer includes:

[0038] Step S51, placing the second target horizontal surface of the ultrasonically cleaned ITO glass substrate in a second vacuum glove box of a vacuum magnetron sputtering furnace, using a 1mL syringe to draw 25 to 35 microliters of PEDOT:PSS solution, rotating at a speed of 5000 rpm for 30 seconds, and spin-coating on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate fixed on the turntable of the vacuum magnetron sputtering furnace. When the thickness of the PEDOT:PSS film layer reaches C2, 24.5nm≤C2≤25.5nm, an ITO glass substrate containing a PEDOT:PSS film layer is obtained, and the ITO glass substrate containing the PEDOT:PSS film layer is placed on a heating table at 150 degrees Celsius and annealed for 15 minutes;

[0039] Step S52: After annealing is completed, the ITO glass substrate containing the PEDOT:PSS film layer is placed in a second vacuum glove box for 5 minutes;

[0040] Step S53: placing the ITO glass substrate loaded with the PEDOT:PSS film layer into the transfer passage of a second vacuum glove box integrated with an atomic layer deposition system, and purging and vacuuming the second vacuum glove box and the transfer passage of the second vacuum glove box with nitrogen to purge the air in the second vacuum glove box and the transfer passage of the second vacuum glove box;

[0041] Step S54: filling the vacuum deposition chamber of the atomic layer deposition system with nitrogen, opening the chamber cover of the vacuum deposition chamber when the pressure inside and outside the vacuum deposition chamber are the same, and placing the ITO glass substrate containing the PEDOT:PSS film layer into the vacuum deposition chamber after the pressure inside the vacuum deposition chamber reaches 5000 Pa, and then closing the chamber cover of the vacuum deposition chamber;

[0042] Step S55: Adjust the chamber temperature and evacuate the vacuum deposition chamber. When the temperature in the vacuum deposition chamber reaches 150° C. and the pressure reaches 20 Pa, begin depositing aluminum oxide on the PEDOT:PSS film layer at a rate of 0.1 nm per revolution until the aluminum oxide film has a thickness of C1, 0.78 nm ≤ C1 ≤ 0.82 nm. Thus, an ITO glass substrate containing an aluminum oxide film is obtained.

[0043] Step S56: After the deposition is completed, the ITO glass substrate containing the aluminum oxide film layer is transferred to the outside of the vacuum deposition chamber, and after cooling in the second vacuum glove box for 5 minutes, an ITO glass substrate containing an interface adjustment layer is obtained, and the ITO glass substrate containing the interface adjustment layer is used as the second coating ITO glass substrate.

[0044] Furthermore, in the step S6, the active layer is spin-coated on the second-coated ITO glass substrate according to the active layer preparation method, and the active layer preparation method includes:

[0045] Step S61, the second coated ITO glass substrate is transferred to a third vacuum glove box where a spin coater is located. After standing for 5 minutes, 30 microliters of poly (3-hexylthiophene) solution is taken and spin-coated on the interface adjustment layer of the second coated ITO glass substrate using a spin coater at a speed of 500 r / min for 30 seconds to prepare a donor material layer with a thickness of B2, setting 2.49 μm ≤ B2 ≤ 2.51 μm, to obtain an ITO glass substrate containing a donor material layer;

[0046] Step S62, placing the ITO glass substrate containing the donor material layer on a heating platform, annealing at 100° C. for 15 minutes, and then allowing to stand for 5 minutes;

[0047] Step S63, take 30 μL of [6,6]-phenyl C 71 -Butenyl perfluorobenzo[6,6]benzo-fullerene solution was spin-coated on the ITO glass containing the donor material layer at a speed of 2500 r / min for 30 seconds to form an acceptor material layer with a thickness of B1, to obtain an ITO glass containing an acceptor material layer, and the thickness was set to 0.29 μm≤B1≤0.31 μm;

[0048] Step S64, placing the ITO glass containing the acceptor material layer on a heating table, annealing at 100° C. for 3 minutes, and then standing for 5 minutes to obtain an ITO glass substrate containing an active layer, which is used as the third coating ITO glass substrate;

[0049] In the step S7, the third-coated ITO glass substrate is evaporated according to the preparation method of the aluminum cathode.

[0050] Compared with the existing technology, the beneficial effect of the present invention is that the device is used to respond to specific narrowband signals, couple the one-dimensional photonic crystal filter with a narrowband organic photomultiplier detector, and use the special structure of the one-dimensional photonic crystal filter to accurately screen specific wavelengths of light. While maintaining normal narrowband response and high photomultiplier, the complexity of the device is reduced and the detection accuracy and sensitivity are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a schematic diagram of the structure of a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter according to this embodiment;

[0052] Figure 2 Schematic diagram of the process of preparing a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter according to this embodiment. DETAILED DESCRIPTION

[0053] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are merely used to explain the present invention and are not intended to limit the present invention.

[0054] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0055] See also Figure 1 As shown, it is a schematic diagram of the structure of a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter. The structure of the narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter includes:

[0056] A narrowband organic photomultiplier detector 101 includes a cathode layer 1, an active layer 2, an interface adjustment layer 3, and an anode layer 4. One end of the anode layer 4 is coupled to a one-dimensional photonic crystal filter 5 to narrow the responsive spectral range.

[0057] Cathode layer 1, which is connected to the acceptor material layer 201 in the active layer 2 and serves as an electron collector;

[0058] The active layer 2 is composed of an acceptor material layer 201 and a donor material layer 202. The end of the active layer 202 near the acceptor material layer 201 is connected to the cathode layer 1, and the end of the active layer 202 near the donor material layer 202 is connected to the interface adjustment layer 3. The active layer 2 is used to absorb light of a specific wavelength, generate excitons, and separate them into charges.

[0059] The interface adjustment layer 3 is composed of an interface modification layer 301 and a hole transport layer 302. The end of the interface adjustment layer 301 is connected to the donor material layer 202 in the active layer 2, and one end of the hole transport layer 302 is connected to the anode layer 4. The interface adjustment layer 3 is used to adjust energy level matching, promote hole transport, block electrons, and adjust the distribution of light in the active layer.

[0060] The acceptor material layer 201 has one end connected to the cathode layer 1 and the other end connected to the donor material layer 202 in the active layer 2, and is used to receive electrons from the excitons in the donor material, promote charge separation, form free carriers, and thus generate photocurrent;

[0061] The donor material layer 202 has one end connected to the acceptor material layer 201 in the active layer 2 and the other end connected to the interface modification layer 301 in the interface adjustment layer 3, and is used to absorb photons and generate excitons;

[0062] An interface modification layer 301, one end of which is connected to the donor material layer 202 in the active layer 2, and the other end of which is connected to the hole transport layer 302 in the interface adjustment layer 3, is used to prevent the interface chemical reaction between the hole transport layer and the active layer, increase the work function of the hole transport layer, and control charge injection;

[0063] The hole transport layer 302 has one end connected to the interface modification layer 301 in the interface adjustment layer 3 and the other end connected to the anode layer 4, and is used to provide a hole conduction channel, block electron transmission, and improve hole mobility;

[0064] The anode layer 4 has one end connected to the acceptor material layer 302 in the interface adjustment layer 3 and the other end connected to the one-dimensional photonic crystal filter 5, and is used for light transmission, conductivity, and serves as a hole collector and a light incident window;

[0065] The one-dimensional photonic crystal filter 5 is coupled to one end of the narrowband organic photomultiplier detector 101 close to the anode layer 4 to achieve narrowband response.

[0066] Specifically, the device is used to respond to specific narrowband signals, couple a one-dimensional photonic crystal filter with a narrowband organic photomultiplier detector, and use the special structure of the one-dimensional photonic crystal filter to accurately screen specific wavelengths of light. While maintaining normal narrowband response and high photomultiplier, it reduces device complexity and improves detection accuracy and sensitivity.

[0067] Specifically, the cathode layer 1 is made of aluminum film, and the thickness of the cathode layer is set to A, 99.8 nm ≤ A ≤ 100.2 nm.

[0068] Specifically, the aluminum film refers to a thin film material made of aluminum.

[0069] Specifically, aluminum has excellent conductive properties and high electrical conductivity, which can provide a good transmission channel for electrons, allowing electrons to be transmitted quickly and efficiently between the cathode layer and other functional layers, thereby reducing the resistance of the device, reducing the loss of electrical energy during transmission, and improving the overall performance and working efficiency of the device.

[0070] Specifically, the active layer 2 adopts a planar heterojunction structure, and the acceptor material layer 201 is composed of [6,6]-phenyl C 71 -butenyl perfluorinated benzo[6,6]benzo-fullerene, the acceptor material layer 201 thickness is set to B1, 0.29μm≤B1≤0.31μm, the donor material layer 202 is composed of poly(3-hexylthiophene), and the donor material layer 202 thickness is set to B2, 2.4μm≤B2≤2.6μm.

[0071] Specifically, the planar heterojunction structure refers to a structure in which the donor and the acceptor are stacked in a planar layered form, and the [6,6]-phenyl C 71 -Butenyl perfluorobenzo[6,6]benzo-fullerene refers to a C 71 The fullerene derivative is a core skeleton with phenyl and butenyl ester groups connected at the 6,6 position. The poly (3-hexylthiophene) refers to a conjugated polymer formed by connecting 3-hexylthiophene monomers through a chemical polymerization reaction. The carriers refer to electrons and holes, and the excitons refer to electron-hole pairs.

[0072] Specifically, the planar heterojunction structure can improve the light absorption capability in a wider spectral range and improve the utilization efficiency of light of different wavelengths. 71 The molecular structure and electronic properties of the -butenyl perfluorinated benzo[6,6]benzo-fullerene can provide a higher hole mobility, reduce energy loss and time delay during the transmission process, and the poly(3-hexylthiophene) has a higher electron mobility and can provide an effective transmission channel for electrons, allowing electrons to move quickly in the transport layer.

[0073] Specifically, the interface adjustment layer 3 is a layer of metal oxide that optimizes the interface properties; the interface modification layer 301 is composed of aluminum oxide, and the thickness of the interface modification layer 301 is set to C1, 0.78nm≤C1≤0.82nm; the hole transport layer 302 is composed of PEDOT:PSS, and the thickness of the hole transport layer 302 is set to C2, 24.5nm≤C2≤25.5nm.

[0074] Specifically, the metal oxide refers to a compound formed by the combination of a metal element and an oxygen element, the aluminum oxide refers to a compound formed by an oxygen element and an aluminum element, and the PEDOT:PSS refers to a complex composed of poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(styrenesulfonic acid) (PSS).

[0075] Specifically, the interface adjustment layer 3 made of metal oxide can optimize carrier transport, reduce interface recombination, and enhance stability. The interface modification layer 301 can enhance the adhesion between different functional layers, making the layers more tightly bonded. The conjugated structure of PEDOT allows electrons to move relatively freely on the molecular chain. The hole transport layer 302 uses PEDOT:PSS doped with PSS to improve the conductivity, resulting in smaller resistance during transmission, thereby improving the charge transfer efficiency and response speed of the device.

[0076] Specifically, the anode layer 4 glass sheet has a patterned etched ITO transparent electrode.

[0077] Specifically, the ITO transparent electrode refers to a semiconductor oxide material with N-type conductive properties.

[0078] Specifically, by etching to form a nanoscale pattern, where the pattern size is smaller than the wavelength of the emitted light, the total internal reflection at the interface between ITO and air can be effectively reduced, allowing more light to be emitted from the device, thereby increasing the device's luminous brightness.

[0079] Specifically, the one-dimensional photonic crystal filter 5 is made of titanium dioxide H with a thickness of 68 nm and silicon dioxide L with a thickness of 110 nm stacked in a periodic alternating structure, and the periodic alternating structure is set as follows:

[0080] N1 cycle-N1 cycle-N1 cycle-N2 cycle-N2 cycle

[0081] The N1 periodic structure is titanium dioxide-silicon dioxide;

[0082] The periodic structure of N2 is silicon dioxide-titanium dioxide.

[0083] Specifically, the titanium dioxide refers to a high-refractive-index inorganic compound composed of titanium and oxygen elements, the silicon dioxide refers to a low-refractive-index inorganic compound composed of silicon and oxygen elements, and the narrowband response refers to the response characteristics of systems, devices, and materials to signals and stimuli in a specific narrow frequency range.

[0084] Specifically, the photonic crystal filter 5 controls light propagation through a periodic structure, selectively filters specific wavelengths, and achieves a narrowband response. It is capable of highly sensitive detection of light within a specific wavelength range, has a very narrow spectral response bandwidth, and can achieve accurate detection of light signals of specific colors or wavelengths, which is of great value in applications requiring high spectral resolution.

[0085] Specifically, the preparation materials of the one-dimensional photonic crystal filter narrowband organic photomultiplier detector include:

[0086] [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene, poly(3-hexylthiophene), PEDOT:PSS, titanium dioxide target, silicon dioxide target, trimethylaluminum Al(CH3)3, water (H2O), aluminum, cleaning milk, dishwashing liquid, deionized water, acetone, isopropyl alcohol, conductive glass.

[0087] Specifically, the amount of materials used in preparing the one-dimensional photonic crystal filter narrowband organic photomultiplier detector includes:

[0088] The [6,6]-phenyl C 71 The amount of -butenyl perfluorobenzo[6,6]benzo-fullerene used is M1, 0.95 mg ≤ M1 ≤ 1.05 mg;

[0089] The amount of poly (3-hexylthiophene) is M2, 89 mg ≤ M2 ≤ 91 mg;

[0090] The dosage of trimethylaluminum Al(CH3)3 is M4, 10ml≤M4≤30ml;

[0091] The amount of water (H2O) is M5, 10ml≤M5≤30ml;

[0092] The amount of aluminum is M6,99mg≤M6≤101mg;

[0093] The amount of the cleansing milk is M7, 0.5ml≤M7≤1.5ml;

[0094] The dosage of the detergent is M8, 1.5ml≤M8≤2.5ml;

[0095] The amount of deionized water used is M9, 7950ml≤M9≤8050ml;

[0096] The amount of acetone is M10, 245ml≤M10≤255ml;

[0097] The dosage of the isopropyl alcohol is M11, 245ml≤M11≤255ml.

[0098] Specifically, the size of the PEDOT:PSS is M3, 23nm≤M3≤27nm, and the size of the conductive glass is 19mm×19mm×1mm.

[0099] See also Figure 2 As shown, it is a flow chart of a method for preparing a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter. The method for preparing a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter includes:

[0100] Step S1, collecting materials for preparing a narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter to obtain preliminary materials;

[0101] Step S2, after obtaining the preliminary material, poly (3-hexylthiophene) and [6,6] -phenyl C 71 -butenyl perfluorobenzo[6,6]benzo-fullerene were pretreated to prepare active layer solution;

[0102] Step S3, after obtaining the active layer solution, performing ultrasonic cleaning on the ITO glass substrate to obtain an ultrasonically cleaned ITO glass substrate;

[0103] Step S4, placing the ultrasonically cleaned ITO glass substrate in a vacuum magnetron sputtering furnace to perform magnetron sputtering on a first target horizontal surface of the ultrasonically cleaned ITO glass substrate, thereby obtaining a one-dimensional photonic crystal filter alternating structure on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate;

[0104] Step S5, after obtaining the one-dimensional photonic crystal filter alternating structure, placing the ultrasonically cleaned ITO glass substrate in a second vacuum glove box, performing spin coating and deposition on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate, and obtaining an interface adjustment layer on the magnetron sputtering-coated ITO glass substrate;

[0105] Step S6, transferring the second-coated ITO glass substrate to a third vacuum glove box, and performing spin coating of an active layer on the second-coated ITO glass substrate to obtain a third-coated ITO glass substrate;

[0106] Step S7: placing the third-coated ITO glass substrate in a vacuum evaporation furnace to evaporate an aluminum cathode to obtain a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter.

[0107] Specifically, the method is applied to the preparation process of a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter. The method addresses the narrow response accuracy problem of the narrow-band organic photomultiplier detector. By coupling a one-dimensional photonic crystal filter, the method can avoid increasing the complexity of the device while maintaining the advantages of the organic photomultiplier detector such as low cost, solubility, and high photomultiplication, thereby greatly improving the performance of the device. The method collects the preparation materials of the narrow-band organic photomultiplier detector based on the one-dimensional photonic crystal filter through step S1 to accurately control the amount of the preparation materials. The method adds an o-dichlorobenzene solution to dissolve the solid powder through step S2, and adds a magnetic particle to help stir the solution at high speed, so that the material is fully dissolved, so as to facilitate the subsequent spin coating of the active layer solution. The method adds deionized water to the ultrasonic cleaning through step S3, so that the water can fully contact the object to be cleaned, transfer the energy of the ultrasonic wave to the surface of the object and generate a strong impact force, thereby stripping off the dirt on the surface of the object. Adding acetone and isopropyl alcohol for cleaning can not only enhance The method has a cleaning effect and can also dissolve and remove organic pollutants on the ITO glass substrate, and isopropyl alcohol can also accelerate the drying speed of the ITO glass substrate after cleaning, so that the subsequent preparation of the one-dimensional photonic crystal filter is not affected by impurities. The method uses the unique periodic alternating structure of the one-dimensional photonic crystal filter in step S4 to accurately screen specific wavelength light and play a filtering role, so as to effectively improve the detection accuracy and sensitivity of the detector to the specific wavelength light signal. The method uses aluminum oxide as the interface modification layer in step S5 to avoid the influence of the transmission layer on the active layer, improve the film forming quality of the active layer, so as to further regulate the transport of carriers, reduce surface defects and interface reactions, and change the interface between different materials of the active layer in step S6 to control carrier transmission, so that the prepared organic photomultiplier detector has high sensitivity. The aluminum used in step S7 has low resistivity and excellent conductivity, and is used as the cathode material to quickly conduct photogenerated carriers, reduce the transmission time and energy loss of carriers, and ensure efficient signal transmission.

[0108] Specifically, in step S1, when collecting the preparation materials of the narrow-band organic photomultiplier detector based on the one-dimensional photonic crystal filter, the preparation materials of the narrow-band organic photomultiplier detector based on the one-dimensional photonic crystal filter are collected according to the preset preparation material collection standard, and the preset preparation material collection standard includes:

[0109] Titanium dioxide target material collection standards are set as follows: solid metal material, titanium dioxide target material diameter 50mm, titanium dioxide target material thickness 3mm, titanium dioxide target material purity 99.999%;

[0110] The silica target material collection standard is set as follows: solid compound material, silica target material diameter 50mm, silica target material thickness 3mm, silica target material purity 99.999%;

[0111] PEDOT:PSS collection standard: the PEDOT:PSS collection standard is set as follows: solution, PEDOT:PSS purity 99.99%, PEDOT:PSS concentration 2%;

[0112] The poly(3-hexylthiophene) collection standard is set as follows: solid powder, poly(3-hexylthiophene) molecular weight is 30,000 to 65,000;

[0113] [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene collection standard, set the [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene collection standards are: solid powder, [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene powder particle size ≤28μm (micrometer), [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene with a purity of 99.99%;

[0114] Aluminum collection standards are set as follows: solid particles, aluminum specifications 2*5mm, aluminum purity 99.99%;

[0115] Deionized water collection standard: set the deionized water collection standard as: liquid, deionized water purity 99.99%;

[0116] Acetone collection standard: the acetone collection standard is set as: liquid, acetone purity 99.5%;

[0117] Isopropyl alcohol collection standard: the isopropyl alcohol collection standard is set as: liquid, isopropyl alcohol purity 99.5%;

[0118] The anhydrous ethanol collection standard is set as follows: liquid, anhydrous ethanol purity 99.99%;

[0119] The ITO glass substrate collection standard is set as: solid, and the ITO glass substrate size is 19mm×19mm×1mm.

[0120] Specifically, the ITO glass substrate refers to a glass sheet on which a layer of indium tin oxide (ITO) thin film is uniformly plated on the surface of ordinary glass by physical or chemical methods, and the anhydrous ethanol refers to ethanol that contains almost no water.

[0121] Specifically, high-purity preparation materials better ensure the sensitivity of the prepared one-dimensional photonic crystal filter narrowband organic photomultiplier detector. High-purity deionized water, acetone, and isopropyl alcohol facilitate the subsequent cleaning of the ITO glass substrate and remove the influence of impurities on subsequent preparation.

[0122] Specifically, in step S2, poly (3-hexylthiophene) and [6,6]-phenyl C are treated according to the active layer solution pretreatment method. 71 -butenyl perfluorobenzo[6,6]benzo-fullerene is pretreated, and the active layer solution pretreatment method includes:

[0123] Step S21, 40 ml of anhydrous ethanol was added to each of the two small brown bottles, and the small brown bottles containing 40 ml of anhydrous ethanol were ultrasonically treated for 15 minutes;

[0124] Step S22, placing the two magnets in a clean beaker filled with anhydrous ethanol and performing ultrasonic treatment for 15 minutes;

[0125] Step S23: Use tweezers to pick up the two ultrasonically treated small brown bottles and the two ultrasonically treated magnetic beads, place them in a nitrogen atmosphere to dry them, and then place the two magnetic beads in the two small brown bottles respectively;

[0126] Step S24, accurately weigh 90 mg of poly (3-hexylthiophene), 1 mg of [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene, 90 mg of poly(3-hexylthiophene) and 1 mg of [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene was placed in two small brown bottles after ultrasonic treatment to obtain poly(3-hexylthiophene) configuration bottle and [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene preparation bottle;

[0127] Step S25, use a pipette to add poly (3-hexylthiophene) and [6,6]-phenyl C 71 1000 mL of o-dichlorobenzene solution was added into the preparation bottle as solvent to dissolve poly (3-hexylthiophene) and [6,6]-phenyl C 71-Butenyl perfluorinated benzo[6,6]benzo-fullerene was stirred at 60 ° C at a speed of 520 revolutions per minute until it was uniformly dissolved to obtain poly(3-hexylthiophene) solution and [6,6]-phenyl C 71 -butenyl perfluorobenzo[6,6]benzo-fullerene solution, the poly(3-hexylthiophene) solution and the [6,6]-phenyl C 71 -Butenyl perfluorobenzo[6,6]benzo-fullerene solution was used as the active layer solution.

[0128] Specifically, the magneton refers to a stirring tool commonly used in laboratories, usually made of a small magnet wrapped in an inert material such as polytetrafluoroethylene (PTFE) or glass. The ultrasonic treatment refers to the use of the special effects of ultrasound in liquids to remove dirt and impurities from the surface of an object. The nitrogen atmosphere refers to an atmosphere created with nitrogen as the main gas component. The o-dichlorobenzene solution is an organic compound used as a solvent.

[0129] Specifically, o-dichlorobenzene solution is added to dissolve the solid powder, and a magnetic particle is used to help stir the solution at high speed, so that the material can be fully dissolved, facilitating the subsequent spin coating of the active layer solution.

[0130] Specifically, in step S3, the method for ultrasonically cleaning the ITO glass substrate includes:

[0131] Step S31, placing the ITO glass substrate in a detergent solution containing surfactant, calcium carbonate, organic acid, softened water, vitamin E ester, and lemon essence and ultrasonically treating for 45 minutes;

[0132] Step S32: Wearing disposable gloves, rinse the first target horizontal surface of the ITO glass substrate and the second target horizontal surface of the ITO glass substrate with deionized water until a water film is formed, thereby obtaining the ITO glass substrate rinsed with deionized water;

[0133] Step S33, placing the ITO glass substrate rinsed with deionized water in an ultrasonic cleaner, adding deionized water, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with deionized water;

[0134] Step S34, placing the ITO glass substrate ultrasonically cleaned with deionized water back into an ultrasonic cleaner, adding acetone, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with acetone;

[0135] Step S35, placing the ITO glass substrate that has been ultrasonically cleaned with acetone back into an ultrasonic cleaner, adding isopropyl alcohol, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate that has been ultrasonically cleaned with isopropyl alcohol;

[0136] Step S36: placing the ITO glass substrate that has been ultrasonically cleaned with isopropyl alcohol in a plasma cleaning machine for plasma cleaning for 5 minutes to obtain an ultrasonically cleaned ITO glass substrate.

[0137] Specifically, the first target horizontal plane refers to the plane of the ITO glass substrate used to prepare a one-dimensional photonic crystal filter, the second target horizontal plane refers to the plane of the ITO glass substrate used to prepare a narrow-band organic photomultiplier detector, the ultrasonic cleaner refers to a machine that removes undesirable substances through mechanical oscillations generated by ultrasonic waves, the deionized water refers to water in which ionic impurities are completely removed, the acetone refers to an organic compound containing a carbonyl group, the isopropyl alcohol refers to an alcohol organic compound containing a hydroxyl group in the molecule, and the plasma cleaning refers to a technology that uses plasma to clean and treat the surface of an object.

[0138] Specifically, adding deionized water to ultrasonic cleaning can fully contact the object being cleaned, transfer the energy of the ultrasonic wave to the surface of the object and generate a strong impact force, thereby peeling off the dirt on the surface of the object. Adding acetone and isopropyl alcohol to cleaning can not only enhance the cleaning effect, but also dissolve and remove organic pollutants on the I TO glass substrate. Isopropyl alcohol can also accelerate the drying speed of the I TO glass substrate after cleaning.

[0139] Specifically, in step S4, magnetron sputtering is performed on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate according to the preparation method of the one-dimensional photonic crystal filter, and the preparation method of the one-dimensional photonic crystal filter includes:

[0140] Step S41, opening a vacuum magnetron sputtering furnace, inverting the ultrasonically cleaned ITO glass substrate, and then fixing it on a turntable on the top of the chamber of the vacuum magnetron sputtering furnace;

[0141] Step S42, placing a titanium dioxide target and a silicon dioxide target on the target of the vacuum magnetron sputtering furnace respectively;

[0142] Step S43, adjusting the quartz thickness measuring probe on the furnace wall of the vacuum magnetron sputtering furnace to align with the ultrasonically cleaned ITO glass substrate on the turntable, and adjusting the quartz monitoring probe to align with the magnetron crucible containing the titanium dioxide target and the silicon dioxide target;

[0143] Step S44, closing the door of the vacuum magnetron sputtering furnace and sealing it, starting the mechanical vacuum pump and the molecular vacuum pump to extract the air in the furnace chamber of the vacuum magnetron sputtering furnace, making the vacuum degree in the furnace of the vacuum magnetron sputtering furnace ≤0.00005 Pa and maintaining it constant;

[0144] Step S45, introducing argon gas at a rate of 34 standard cubic centimeters per minute and oxygen gas at a rate of 1.5 standard cubic centimeters per minute into the vacuum magnetron sputtering furnace, and adjusting the internal pressure of the vacuum magnetron sputtering furnace to 0.59 Pa;

[0145] Step S46, turning on the DC power supply of the titanium dioxide target, the temperature of the ultrasonically cleaned ITO glass substrate is brought to room temperature and maintained at a constant temperature, turning on the quartz thickness measuring probe for magnetron plating of the titanium dioxide layer, and depositing and growing a titanium dioxide planar film layer on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate;

[0146] In step S47, the thickness of the magnetically controlled titanium dioxide film layer is measured by the quartz thickness measuring probe and its thickness value is displayed on the display screen. The film growth rate is set to be maintained at 0.20-0.35 angstroms per second to achieve a thickness of the titanium dioxide film layer D1, 67.5nm≤D1≤68.5nm. The film is allowed to cool in a vacuum state in the furnace to obtain an ITO glass substrate containing a titanium dioxide flat film layer.

[0147] Step S48, placing the ITO glass substrate containing the titanium dioxide flat film layer in the first vacuum glove box of the vacuum magnetron sputtering furnace for 3 minutes;

[0148] Step S49, turning on the AC power supply of the silicon dioxide target, the temperature of the ITO glass substrate containing the titanium dioxide planar film layer is brought to room temperature and maintained at a constant temperature, turning on the quartz thickness measuring probe for magnetron plating of the silicon dioxide layer, and depositing and growing a silicon dioxide planar film layer on the ITO glass substrate containing the titanium dioxide planar film layer;

[0149] Step S410: Measure the thickness of the magnetron film layer using a quartz thickness gauge and display the thickness value on a display screen. Set the film growth rate to maintain at approximately 8.5 angstroms per second until the silicon dioxide film layer has a thickness D2 of 109.5 nm ≤ D2 ≤ 110.5 nm. Cool the film in a vacuum furnace to obtain an ITO glass substrate containing a planar silicon dioxide film layer.

[0150] In step S411, the titanium dioxide planar film layer and the silicon dioxide planar film layer are combined to form a period of photonic crystal, and then steps S41 to S410 are repeated until 3 cycles are completed, and the coating order of the titanium dioxide planar film layer and the silicon dioxide planar film layer is exchanged. After completing 3 cycles, the film is allowed to stand in the first vacuum glove box of the vacuum magnetron sputtering furnace for 5 minutes to obtain a one-dimensional photonic crystal filter.

[0151] Specifically, the vacuum magnetron sputtering furnace refers to a device that uses magnetron sputtering technology to prepare a thin film on the surface of an object in a high vacuum environment. The magnetron target refers to the raw material that is sputtered in the magnetron sputtering process. The plating furnace refers to a device that deposits one or more layers of thin film on the surface of a base material by physical or chemical methods. The quartz thickness gauge probe refers to an instrument component that uses the physical properties of quartz crystal to measure the thickness of an object. The quartz monitoring probe refers to an instrument device with quartz crystal as the core sensitive element for monitoring and measuring specific physical or chemical quantities. The magnetron crucible refers to a crucible used in conjunction with magnetic field control in a specific magnetron process. The mechanical vacuum pump refers to a device that uses mechanical motion to measure the thickness of an object. The molecular vacuum pump is a vacuum pump that uses high-speed moving parts to transfer momentum to gas molecules, so that the gas molecules obtain a directional velocity and thus achieve vacuum to obtain a high vacuum or ultra-high vacuum environment. The substrate temperature refers to the temperature reached by the surface of the material serving as the substrate in the thin film growth process. The photonic crystal refers to an artificial optical material with a periodic dielectric structure. The vacuum glove box refers to a laboratory device that fills a high-purity inert gas into the box and circulates to filter out the active substances therein. The photonic crystal of one period refers to the basic unit constituting the photonic crystal. The three periods refer to the basic units constituting the photonic crystal being repeated three times.

[0152] Specifically, the unique periodic alternating structure of the one-dimensional photonic crystal filter can accurately screen specific wavelengths of light, acting as a filter and effectively improving the detector's detection accuracy and sensitivity to specific wavelength light signals.

[0153] Specifically, in step S5, spin coating and deposition are performed on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate according to a method for preparing an interface adjustment layer, wherein the method for preparing the interface adjustment layer comprises:

[0154] Step S51: placing the second target horizontal surface of the ultrasonically cleaned ITO glass substrate in a second vacuum glove box of a vacuum magnetron sputtering furnace, drawing 25 to 35 microliters of PEDOT:PSS solution with a 1 mL syringe, rotating at a speed of 5000 rpm for 30 seconds, and spin-coating the solution on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate fixed on the turntable of the vacuum magnetron sputtering furnace. When the thickness of the PEDOT:PSS film layer reaches C2, 24.5 nm ≤ C2 ≤ 25.5 nm, an ITO glass substrate containing a PEDOT:PSS film layer is obtained, and the ITO glass substrate containing the PEDOT:PSS film layer is placed on a heating table at 150 degrees Celsius and annealed for 15 minutes;

[0155] Step S52: After annealing is completed, the ITO glass substrate containing the PEDOT:PSS film layer is placed in a second vacuum glove box for 5 minutes;

[0156] Step S53: placing the ITO glass substrate loaded with the PEDOT:PSS film layer into the transfer passage of a second vacuum glove box integrated with an atomic layer deposition system, and purging and vacuuming the second vacuum glove box and the transfer passage of the second vacuum glove box with nitrogen to purge the air in the second vacuum glove box and the transfer passage of the second vacuum glove box;

[0157] Step S54: filling the vacuum deposition chamber of the atomic layer deposition system with nitrogen, opening the chamber cover of the vacuum deposition chamber when the pressure inside and outside the vacuum deposition chamber are the same, and placing the ITO glass substrate containing the PEDOT:PSS film layer into the vacuum deposition chamber after the pressure inside the vacuum deposition chamber reaches 5000 Pa, and then closing the chamber cover of the vacuum deposition chamber;

[0158] Step S55: Adjust the chamber temperature and evacuate the vacuum deposition chamber. When the temperature in the vacuum deposition chamber reaches 150° C. and the pressure reaches 20 Pa, begin depositing aluminum oxide on the PEDOT:PSS film layer at a rate of 0.1 nm per revolution until the aluminum oxide film has a thickness of C1, 0.78 nm ≤ C1 ≤ 0.82 nm. Thus, an ITO glass substrate containing an aluminum oxide film is obtained.

[0159] Step S56: After the deposition is completed, the ITO glass substrate containing the aluminum oxide film layer is transferred to the outside of the vacuum deposition chamber, and after cooling in the second vacuum glove box for 5 minutes, an ITO glass substrate containing an interface adjustment layer is obtained, and the ITO glass substrate containing the interface adjustment layer is used as the second coating ITO glass substrate.

[0160] Specifically, the spin coating refers to a process method for uniformly coating a liquid film on the surface of a material, the deposition refers to the process of converting the solute in the solution into a solid substance in a chemical reaction, and precipitating and accumulating it at a specific location, the annealing refers to the process of heat treating the metal, the atomic layer deposition system refers to the equipment used to implement atomic layer deposition technology, the vacuum deposition chamber refers to the equipment component used for depositing materials in a vacuum environment, the deposition chamber refers to the specific space used for the material deposition process, the heating table refers to the equipment used to heat objects in the laboratory, and the second-coated I TO glass substrate refers to the I TO glass substrate on which the one-dimensional photonic crystal filter and interface adjustment layer have been prepared.

[0161] Specifically, the use of aluminum oxide as the interface modification layer avoids the influence of the transport layer on the active layer, improves the film formation quality of the active layer, further regulates the transport of carriers, and reduces surface defects and interface reactions.

[0162] Specifically, in step S6, the active layer is spin-coated on the second-coated ITO glass substrate according to the preparation method of the active layer, and the preparation method of the active layer includes:

[0163] Step S61, the second coated ITO glass substrate is transferred to a third vacuum glove box where a spin coater is located. After standing for 5 minutes, 30 microliters of poly (3-hexylthiophene) solution is taken and spin-coated on the interface adjustment layer of the second coated ITO glass substrate using a spin coater at a speed of 500 r / min for 30 seconds to prepare a donor material layer with a thickness of B2, setting 2.49 μm ≤ B2 ≤ 2.51 μm, to obtain an ITO glass substrate containing a donor material layer;

[0164] Step S62, placing the ITO glass substrate containing the donor material layer on a heating platform, annealing at 100° C. for 15 minutes, and then allowing to stand for 5 minutes;

[0165] Step S63, take 30 μL of [6,6]-phenyl C 71 -Butenyl perfluorobenzo[6,6]benzo-fullerene solution was spin-coated on the ITO glass containing the donor material layer at a speed of 2500 r / min for 30 seconds to form an acceptor material layer with a thickness of B1, to obtain an ITO glass containing an acceptor material layer, and the thickness was set to 0.29 μm≤B1≤0.31 μm;

[0166] Step S64 , placing the ITO glass containing the acceptor material layer on a heating platform, annealing at 100° C. for 3 minutes and then standing for 5 minutes to obtain an ITO glass substrate containing an active layer, which is used as the third-coated ITO glass substrate.

[0167] Specifically, the coating machine refers to a device used to evenly coat liquid material on the surface of a substrate, and the third-coated I TO glass substrate refers to an I TO glass substrate on which a one-dimensional photonic crystal filter, an interface adjustment layer and an active layer have been prepared.

[0168] Specifically, by changing the interface between different materials in the active layer to control carrier transport, the prepared organic photomultiplier detector has high sensitivity.

[0169] Specifically, in the step S7, the third-coated ITO glass substrate is evaporated according to the preparation method of the aluminum cathode, and the preparation method of the aluminum cathode includes:

[0170] Step S71, placing the third-coated ITO glass substrate in a vacuum evaporation furnace and fixing it on a turntable on the top of the furnace chamber of the vacuum evaporation furnace, with the active layer of the third-coated ITO glass substrate facing downward;

[0171] Step S72: placing the aluminum evaporation material in a tungsten boat of the vacuum evaporation furnace, aligning a quartz thickness gauge on the furnace wall of the vacuum evaporation furnace with the third-coated ITO glass substrate on the turntable of the vacuum evaporation furnace, and aligning a quartz monitoring probe with the aluminum-tungsten boat of the vacuum evaporation furnace; and closing and sealing the vacuum evaporation furnace door.

[0172] Step S73, turning on the mechanical vacuum pump and the molecular vacuum pump to extract the air in the furnace chamber of the vacuum evaporation furnace to make the vacuum degree in the furnace ≤ 0.0005 Pa and keep it constant;

[0173] Step S74: Turn on the turntable at a speed of 8 rpm, turn on the quartz thickness gauge probe of the vacuum evaporation furnace, turn on the tungsten boat power supply containing aluminum in the vacuum evaporation furnace, and sublime the aluminum from the solid state to the gaseous state. The film growth rate is maintained at 0.1 nm / s, and the gaseous aluminum is deposited on the active layer of the third-coated ITO glass substrate to form a growth film layer with a thickness of A, 99.8 nm ≤ A ≤ 100.2 nm, to obtain an aluminum cathode, which is used as the ITO glass substrate containing the aluminum cathode.

[0174] Step S75: placing the ITO glass substrate containing the aluminum cathode in the evaporation chamber of the vacuum evaporation furnace and cooling it for 10 minutes to obtain a narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter.

[0175] Specifically, the tungsten boat refers to an evaporation source formed by high-temperature stamping, welding and other processes using tungsten sheets containing up to 99.95% tungsten.

[0176] Specifically, the aluminum used has low resistivity and excellent conductivity. As a cathode material, it helps to quickly conduct photogenerated carriers, reduce the transmission time and energy loss of carriers, and ensure efficient signal transmission.

[0177] Thus far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will fall within the scope of protection of the present invention.

Claims

1. A narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter, characterized in that: include: A narrowband organic photomultiplier detector comprises a cathode layer, an active layer, an interface adjustment layer, and an anode layer, wherein one end of the detector close to the anode layer is coupled to a one-dimensional photonic crystal filter for narrowing the responsive spectral range; The cathode layer is connected to the acceptor material layer in the active layer and serves as an electron collector; The active layer is composed of an acceptor material layer and a donor material layer, wherein the end of the active layer close to the acceptor material layer is connected to the cathode layer, and the end of the active layer close to the donor material layer is connected to the interface modification layer, and is used to absorb light of a specific wavelength, generate excitons and separate them into charges; The interface adjustment layer consists of an interface modification layer and a hole transport layer. The end of the interface adjustment layer close to the interface modification layer is connected to the donor material layer in the active layer. The hole transport layer is connected to the anode layer and is used to adjust energy level matching, promote hole transport, block electrons, and adjust the distribution of light in the active layer. An acceptor material layer, one end of which is connected to the cathode layer and the other end is connected to the donor material layer in the active layer, and is used to receive electrons from the excitons in the donor material, promote charge separation, form free carriers, and thus generate photocurrent; A donor material layer, one end of which is connected to the acceptor material layer in the active layer and the other end of which is connected to the interface modification layer in the interface adjustment layer, for absorbing photons and generating excitons; An interface modification layer, one end of which is connected to the donor material layer in the active layer and the other end is connected to the hole transport layer in the interface adjustment layer, and is used to prevent the interface chemical reaction between the hole transport layer and the active layer, increase the work function of the hole transport layer, and control charge injection; The hole transport layer has one end connected to the interface modification layer in the interface adjustment layer and the other end connected to the anode layer, and is used to provide a hole conduction channel, block electron transmission, and improve hole mobility; The anode layer has one end connected to the acceptor material layer in the interface adjustment layer and the other end connected to the one-dimensional photonic crystal filter, and is used for light transmission, conductivity, and serves as a hole collector and a light incident window; A one-dimensional photonic crystal filter is coupled to an end of a narrowband organic photomultiplier detector close to the anode layer to achieve narrowband response.

2. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: The preparation materials of the one-dimensional photonic crystal filter narrowband organic photomultiplier detector include: [6,6]-phenyl C 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene, poly(3-hexylthiophene), PEDOT:PSS, titanium dioxide target, silicon dioxide target, trimethylaluminum Al(CH3)3, water (H2O), aluminum, cleaning milk, dishwashing liquid, deionized water, acetone, isopropyl alcohol, conductive glass.

3. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: The amount of the materials used in preparing the one-dimensional photonic crystal filter narrowband organic photomultiplier detector includes: the [6,6]-phenyl C 71 The amount of -butenyl perfluorobenzo[6,6]benzo-fullerene used is M1, 0.95 mg≤M1≤1.05 mg.

4. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: The method for preparing the narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter comprises: Step S1, collecting materials for preparing a narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter to obtain preliminary materials; Step S2, after obtaining the preliminary material, poly (3-hexylthiophene) and [6,6] -phenyl C 71 -butenyl perfluorobenzo[6,6]benzo-fullerene were pretreated to prepare active layer solution; Step S3, after obtaining the active layer solution, performing ultrasonic cleaning on the ITO glass substrate to obtain an ultrasonically cleaned ITO glass substrate; Step S4, placing the ultrasonically cleaned ITO glass substrate in a vacuum magnetron sputtering furnace, performing magnetron sputtering on a first target horizontal surface of the ultrasonically cleaned ITO glass substrate, and obtaining a one-dimensional photonic crystal filter alternating structure on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate; Step S5, after obtaining the one-dimensional photonic crystal filter alternating structure, placing the ultrasonically cleaned ITO glass substrate in a second vacuum glove box, performing spin coating and deposition on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate, obtaining an interface adjustment layer on the magnetron sputtering-coated ITO glass substrate, and combining the interface adjustment layer and the magnetron sputtering-coated ITO glass substrate to obtain a second-coated ITO glass substrate; Step S6, transferring the second-coated ITO glass substrate to a third vacuum glove box, and performing spin coating of an active layer on the second-coated ITO glass substrate to obtain a third-coated ITO glass substrate; Step S7: placing the third-coated ITO glass substrate in a vacuum evaporation furnace to evaporate an aluminum cathode to obtain a narrow-band organic photomultiplier detector based on a one-dimensional photonic crystal filter.

5. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: In step S1, when collecting the preparation materials of the narrowband organic photomultiplier detector based on the one-dimensional photonic crystal filter, the preparation materials of the narrowband organic photomultiplier detector based on the one-dimensional photonic crystal filter are collected according to the preset preparation material collection standard.

6. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: In the step S2, poly (3-hexylthiophene) and [6,6]-phenyl C are prepared according to the active layer solution pretreatment method. 71 -Butenyl perfluorinated benzo[6,6]benzo-fullerene was pretreated.

7. The narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter according to claim 1, characterized in that: In step S3, the method for ultrasonically cleaning the ITO glass substrate includes: Step S31, placing the ITO glass substrate in a detergent solution containing surfactant, calcium carbonate, organic acid, softened water, vitamin E ester, and lemon essence and ultrasonically treating the solution for 45 minutes; Step S32, wearing disposable gloves, rinse the first target horizontal surface of the ITO glass substrate and the second target horizontal surface of the ITO glass substrate with deionized water until a water film is formed, thereby obtaining an ITO glass substrate rinsed with deionized water; Step S33, placing the ITO glass substrate rinsed with deionized water in an ultrasonic cleaner, adding deionized water, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with deionized water; Step S34, placing the ITO glass substrate ultrasonically cleaned with deionized water back into an ultrasonic cleaner, adding acetone, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with acetone; Step S35, placing the ITO glass substrate ultrasonically cleaned with acetone back into an ultrasonic cleaner, adding isopropyl alcohol, and ultrasonically cleaning for 15 minutes to obtain an ITO glass substrate ultrasonically cleaned with isopropyl alcohol; Step S36: placing the ITO glass substrate that has been ultrasonically cleaned with isopropyl alcohol in a plasma cleaning machine for plasma cleaning for 5 minutes to obtain an ultrasonically cleaned ITO glass substrate.

8. The narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter according to claim 1, characterized in that: In step S4, magnetron sputtering is performed on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate according to a method for preparing a one-dimensional photonic crystal filter, wherein the method for preparing the one-dimensional photonic crystal filter comprises: Step S41, opening a vacuum magnetron sputtering furnace, inverting the ultrasonically cleaned ITO glass substrate, and then fixing it on a turntable on the top of the chamber of the vacuum magnetron sputtering furnace; Step S42, placing a titanium dioxide target and a silicon dioxide target on the target of the vacuum magnetron sputtering furnace respectively; Step S43, adjusting the quartz thickness measuring probe on the furnace wall of the vacuum magnetron sputtering furnace to align with the ultrasonically cleaned ITO glass substrate on the turntable, and adjusting the quartz monitoring probe to align with the magnetron crucible containing the titanium dioxide target and the silicon dioxide target; Step S44, closing the door of the vacuum magnetron sputtering furnace and sealing it, starting the mechanical vacuum pump and the molecular vacuum pump to extract the air in the furnace chamber of the vacuum magnetron sputtering furnace, making the vacuum degree in the furnace of the vacuum magnetron sputtering furnace ≤0.00005 Pa and maintaining it constant; Step S45, introducing argon gas at a rate of 34 standard cubic centimeters per minute and oxygen gas at a rate of 1.5 standard cubic centimeters per minute into the vacuum magnetron sputtering furnace, and adjusting the internal pressure of the vacuum magnetron sputtering furnace to 0.59 Pa; Step S46, turning on the DC power supply of the titanium dioxide target, the temperature of the ultrasonically cleaned ITO glass substrate is brought to room temperature and maintained at a constant temperature, turning on the quartz thickness measuring probe for magnetron plating of the titanium dioxide layer, and depositing and growing a titanium dioxide planar film layer on the first target horizontal surface of the ultrasonically cleaned ITO glass substrate; In step S47, the thickness of the magnetically controlled titanium dioxide film layer is measured by the quartz thickness measuring probe and its thickness value is displayed on the display screen. The film growth rate is set to be maintained at 0.20-0.35 angstroms per second to achieve a thickness of the titanium dioxide film layer D1, 67.5nm≤D1≤68.5nm. The film is allowed to cool in the furnace under a vacuum state to obtain an ITO glass substrate containing a flat titanium dioxide film layer. Step S48, placing the ITO glass substrate containing the titanium dioxide flat film layer in the first vacuum glove box of the vacuum magnetron sputtering furnace for 3 minutes; Step S49, turning on the AC power supply of the silicon dioxide target, the temperature of the ITO glass substrate containing the titanium dioxide flat film layer is brought to room temperature and maintained at a constant temperature, turning on the quartz thickness measuring probe for magnetron plating of the silicon dioxide layer, and depositing and growing a silicon dioxide flat film layer on the ITO glass substrate containing the titanium dioxide flat film layer; Step S410: Measure the thickness of the magnetron film layer with a quartz thickness probe and display the thickness value on a display screen. Set the film growth rate to maintain at approximately 8.5 angstroms per second to achieve a silicon dioxide film thickness D2 of 109.5 nm ≤ D2 ≤ 110.5 nm. Cool the film in a vacuum furnace to obtain an ITO glass substrate containing a planar silicon dioxide film layer. In step S411, the titanium dioxide planar film layer and the silicon dioxide planar film layer are combined to form a period of photonic crystal, and then steps S41 to S410 are repeated until 3 cycles are completed, and the coating order of the titanium dioxide planar film layer and the silicon dioxide planar film layer is exchanged. After completing 3 cycles, the film is allowed to stand in the first vacuum glove box of the vacuum magnetron sputtering furnace for 5 minutes to obtain a one-dimensional photonic crystal filter.

9. The narrowband organic photomultiplier detector based on a one-dimensional photonic crystal filter according to claim 1, characterized in that: In step S5, spin coating and deposition are performed on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate according to a method for preparing an interface adjustment layer, wherein the method for preparing the interface adjustment layer comprises: Step S51: placing the second target horizontal surface of the ultrasonically cleaned ITO glass substrate in a second vacuum glove box of a vacuum magnetron sputtering furnace, drawing 25 to 35 microliters of PEDOT:PSS solution with a 1 mL syringe, rotating at a speed of 5000 rpm for 30 seconds, and spin-coating the solution on the second target horizontal surface of the ultrasonically cleaned ITO glass substrate fixed on the turntable of the vacuum magnetron sputtering furnace. When the thickness of the PEDOT:PSS film layer reaches C2, 24.5 nm ≤ C2 ≤ 25.5 nm, an ITO glass substrate containing a PEDOT:PSS film layer is obtained, and the ITO glass substrate containing the PEDOT:PSS film layer is placed on a heating table at 150 degrees Celsius and annealed for 15 minutes; Step S52: After annealing is completed, the ITO glass substrate containing the PEDOT:PSS film layer is placed in a second vacuum glove box for 5 minutes; Step S53: placing the ITO glass substrate loaded with the PEDOT:PSS film into the transfer passage of a second vacuum glove box integrated with an atomic layer deposition system, and purging and vacuuming the second vacuum glove box and the transfer passage of the second vacuum glove box with nitrogen to purge the air in the second vacuum glove box and the transfer passage of the second vacuum glove box; Step S54: filling the vacuum deposition chamber of the atomic layer deposition system with nitrogen, opening the chamber cover of the vacuum deposition chamber when the pressure inside and outside the vacuum deposition chamber are the same, and placing the ITO glass substrate containing the PEDOT:PSS film layer into the vacuum deposition chamber after the pressure inside the vacuum deposition chamber reaches 5000 Pa, and then closing the chamber cover of the vacuum deposition chamber; Step S55: Adjust the chamber temperature and evacuate the vacuum deposition chamber. When the temperature in the vacuum deposition chamber reaches 150° C. and the pressure reaches 20 Pa, begin depositing aluminum oxide on the PEDOT:PSS film layer at a rate of 0.1 nm per revolution until the aluminum oxide film has a thickness of C1, 0.78 nm ≤ C1 ≤ 0.82 nm. Thus, an ITO glass substrate containing an aluminum oxide film is obtained. Step S56: After the deposition is completed, the ITO glass substrate containing the aluminum oxide film layer is transferred to the outside of the vacuum deposition chamber, and after cooling in the second vacuum glove box for 5 minutes, an ITO glass substrate containing an interface adjustment layer is obtained, and the ITO glass substrate containing the interface adjustment layer is used as the second coating ITO glass substrate.

10. The narrowband organic photomultiplier detector based on one-dimensional photonic crystal filter according to claim 1, characterized in that: In the step S6, the active layer is spin-coated on the second-coated ITO glass substrate according to the active layer preparation method, and the active layer preparation method includes: Step S61: The second-coated ITO glass substrate is transferred to a third vacuum glove box where a spin coater is located. After standing for 5 minutes, 30 microliters of poly(3-hexylthiophene) solution is spin-coated on the interface adjustment layer of the second-coated ITO glass substrate using a spin coater at a speed of 500 r / min for 30 seconds to prepare a donor material layer with a thickness of B2, setting 2.49 μm ≤ B2 ≤ 2.51 μm, to obtain an ITO glass substrate containing a donor material layer; Step S62, placing the ITO glass substrate containing the donor material layer on a heating platform, annealing at 100° C. for 15 minutes, and then allowing to stand for 5 minutes; Step S63, take 30 μL of [6,6]-phenyl C 71 -Butenyl perfluorobenzo[6,6]benzo-fullerene solution was spin-coated on the ITO glass containing the donor material layer at a speed of 2500 r / min for 30 seconds to form an acceptor material layer with a thickness of B1, to obtain an ITO glass containing an acceptor material layer, and the thickness was set to 0.29 μm≤B1≤0.31 μm; Step S64, placing the ITO glass containing the acceptor material layer on a heating table, annealing at 100° C. for 3 minutes, and then standing for 5 minutes to obtain an ITO glass substrate containing an active layer, which is used as the third coating ITO glass substrate; In the step S7, the third-layered ITO glass substrate is evaporated according to the preparation method of the aluminum cathode.

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