Vapor deposition mask and vapor deposition mask manufacturing method

Abstract

The invention relates to a vapor deposition mask and a method for manufacturing the vapor deposition mask. A vapor deposition mask is provided with: a metal plate including a first surface and a second surface positioned on the opposite side of the first surface; a through hole penetrating from the first surface side to the second surface side of the metal plate; and a flat region located between two adjacent through holes when the vapor deposition mask is viewed from the second surface side. The through holes are arranged in a staggered manner in the first direction and the second direction in plan view. The flat regions include a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line. The first center line passes through a center point of two through holes adjacent to each other in the first direction. The first flat region includes a portion in which the size of the first flat region in the first direction increases with increasing distance from the first center line. The second flat region includes a portion in which the size of the second flat region in the first direction increases with increasing distance from the first center line.

Description

[0001] This application is a divisional application. The Chinese national application number of the original application is 202180065107.2, the application date is August 6, 2021, and the name of the invention is “Evaporation mask and method for manufacturing evaporation mask”. Technical Field

[0002] Embodiments of the present invention relate to a vapor deposition mask and a method for manufacturing the vapor deposition mask. Background Art

[0003] Display devices used in portable devices such as smartphones and tablets are preferably high-definition, with a pixel density of, for example, 400 ppi or higher. Demand for ultra-high definition (UHD) displays is also increasing in portable devices, and in this case, the pixel density of displays is preferably 800 ppi or higher, for example.

[0004] Among display devices, organic EL display devices have attracted attention due to their good responsiveness, low power consumption and high contrast. As a method for forming pixels of an organic EL display device, a method of forming pixels or electrodes in a desired pattern using a vapor deposition mask is known, wherein the vapor deposition mask is formed with through holes arranged in a desired pattern. Specifically, first, a vapor deposition mask is combined on a substrate for an organic EL display device. Then, a vapor deposition material containing an organic material is attached to the substrate through the through holes of the vapor deposition mask. By implementing such a vapor deposition process, pixels having a vapor deposition layer containing a vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the through holes of the vapor deposition mask.

[0005] As a manufacturing method of a mask, it is known to have a method for forming a through hole in a metal plate by etching using a photolithography technique. For example, first, a first surface resist is formed on the first surface of the metal plate, and a second surface resist is formed on the second surface of the metal plate. Then, the area not covered by the first surface resist in the first surface of the metal plate is etched to form a first recessed portion on the first surface of the metal plate. Then, the area not covered by the second surface resist in the second surface of the metal plate is etched to form a second recessed portion on the second surface of the metal plate. At this time, by etching in a manner such that the first recessed portion and the second recessed portion are interconnected, a through hole that penetrates the metal plate can be formed.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-148745 Summary of the Invention

[0009] During the evaporation process, a portion of the evaporation material moving from the evaporation source toward the evaporation mask moves in a direction inclined relative to the normal direction of the metal plate constituting the evaporation mask. The evaporation material moving in a direction inclined relative to the normal direction of the metal plate tends to adhere to the wall surface of the through hole without passing through the through hole of the evaporation mask. Therefore, the thickness of the evaporation layer composed of the evaporation material attached to the substrate becomes thinner as it approaches the wall surface of the through hole. The phenomenon in which the attachment of such evaporation material to the substrate is hindered by the wall surface of the through hole is also called shadow.

[0010] In one embodiment of the present invention, a vapor deposition mask including two or more through holes includes:

[0011] a metal plate comprising a first surface and a second surface located opposite to the first surface;

[0012] the through hole extending from the first surface side to the second surface side of the metal plate; and

[0013] a flat region located between two adjacent through holes when the vapor deposition mask is viewed from the second surface side;

[0014] The through holes are arranged alternately in the first direction and the second direction when viewed from above.

[0015] The flat region includes a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line.

[0016] The first center line passes through the center points of the two through holes adjacent to each other in the first direction.

[0017] The first flat region includes a portion in which the size of the first flat region in the first direction increases as the distance from the first center line increases.

[0018] The second flat region includes a portion in which a size of the second flat region in the first direction increases as the area moves away from the first center line.

[0019] According to the embodiment of the present invention, it is possible to suppress defects such as deformation of the vapor deposition mask and to suppress the generation of shadows. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a plan view showing an example of an organic EL display device.

[0021] Figure 2 Observed from the II-II direction Figure 1 Cross-sectional view of an organic EL display device.

[0022] Figure 3This is a diagram showing a vapor deposition apparatus including a vapor deposition mask apparatus according to one embodiment of the present invention.

[0023] Figure 4 This is a plan view showing an example of a vapor deposition mask apparatus.

[0024] Figure 5A The figure shows the second side of the Figure 4 A top view of an example of an effective area of ​​a vapor deposition mask of a vapor deposition mask apparatus.

[0025] Figure 5B It shows Figure 5A A top view of the through-hole area.

[0026] Figure 6 yes Figure 5A An example of a cross-sectional view of a vapor deposition mask along line AA.

[0027] Figure 7 yes Figure 5A An example of a cross-sectional view of a vapor deposition mask along line BB.

[0028] Figure 8 yes Figure 5A An example of a cross-sectional view of a vapor deposition mask along line CC.

[0029] Figure 9 It shows Figure 5A A top view of the first flat area and the second flat area.

[0030] Figure 10 This is a schematic diagram for generally explaining an example of a method for manufacturing a vapor deposition mask.

[0031] Figure 11 It is a diagram showing the process of forming a first resist layer and a second resist layer on a metal plate.

[0032] Figure 12 It is a diagram showing the process of patterning the first resist layer and the second resist layer.

[0033] Figure 13 It is a diagram showing the first surface etching step.

[0034] Figure 14 It is a diagram showing the second surface etching step.

[0035] Figure 15 It is a diagram showing the second surface etching step.

[0036] Figure 16 This is a plan view showing an example of the first flat region and the second flat region of the vapor deposition mask.

[0037] Figure 17This is a plan view showing an example of the first flat region and the second flat region of the vapor deposition mask.

[0038] Figure 18 This is a plan view showing an example of the effective region of the vapor deposition mask when viewed from the second surface side.

[0039] Figure 19 yes Figure 18 An example of a cross-sectional view of the vapor deposition mask along line DD.

[0040] Figure 20 It shows Figure 18 A top view of the first flat area and the second flat area.

[0041] Figure 21 This is a cross-sectional view showing an example of a metal plate provided with a patterned second-side resist layer.

[0042] Figure 22 This is a diagram showing an example of the second surface etching step.

[0043] Figure 23 This is a diagram showing an example of the first surface processing step.

[0044] Figure 24 It is a figure which shows the structure of the vapor deposition mask in Example and the evaluation result. DETAILED DESCRIPTION

[0045] In this specification and the drawings, unless otherwise specified, terms such as "substrate", "base material", "plate", "sheet" or "film" indicating a material serving as the basis of a certain structure are not distinguished from each other merely based on the difference in name.

[0046] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" or values ​​of lengths and angles that limit shapes, geometric conditions and their degrees are not limited to strict meanings, but are interpreted to include a range of degrees that can be expected to have the same function.

[0047] In this specification and the accompanying drawings, unless otherwise specified, when a structure, such as a component or region, is referred to as being "above" or "below," "on the upper side" or "below," or "above" or "below" another component or region or other structure, this includes situations where the structure is in direct contact with the other structure. Furthermore, this also includes situations where another structure is located between the other structure, i.e., situations of indirect contact. Unless otherwise specified, the terms "above," "upper side," "above," or "below," "lower side," or "below" may refer to the up-down direction.

[0048] In this specification and the drawings, unless otherwise specified, identical or similar symbols are used for identical parts or parts having the same function, and duplicate descriptions may be omitted. For ease of description, the dimensional ratios in the drawings may differ from the actual ratios, and parts of the structure may be omitted from the drawings.

[0049] In this specification and the drawings, unless otherwise specified, one embodiment of this specification can be combined with other embodiments within the scope of no contradiction. Other embodiments can also be combined with each other within the scope of no contradiction.

[0050] In this specification and the drawings, unless otherwise specified, when multiple steps are disclosed in a method such as a manufacturing method, other undisclosed steps may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the scope of no contradiction.

[0051] In this specification and the accompanying drawings, unless otherwise specified, numerical ranges indicated by the symbol "to" include the numerical values ​​placed before and after the symbol "to". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

[0052] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0053] A first aspect of the present invention is a vapor deposition mask including two or more through-holes, wherein the vapor deposition mask includes:

[0054] a metal plate comprising a first surface and a second surface located opposite to the first surface;

[0055] the through hole extending from the first surface side to the second surface side of the metal plate; and

[0056] a flat region located between two adjacent through holes when the vapor deposition mask is viewed from the second surface side;

[0057] The through holes are arranged alternately in the first direction and the second direction when viewed from above.

[0058] The flat region includes a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line.

[0059] The first center line passes through the center points of the two through holes adjacent to each other in the first direction.

[0060] The first flat region includes a portion in which the size of the first flat region in the first direction increases as the distance from the first center line increases.

[0061] The second flat region includes a portion in which a size of the second flat region in the first direction increases as the area moves away from the first center line.

[0062] In a second aspect of the present invention, in the vapor deposition mask of the first aspect, the first flat region and the second flat region may be continuous.

[0063] In a third aspect of the present invention, in the vapor deposition mask of the first aspect, the first flat region and the second flat region may be discontinuous.

[0064] In a fourth aspect of the present invention, in the vapor deposition mask of each of the first to third aspects, when the vapor deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction may be connected.

[0065] In a fifth aspect of the present invention, the vapor deposition mask of each of the first to third aspects may include a third flat region located between two of the through holes adjacent to each other in the second direction when the vapor deposition mask is viewed from the second surface.

[0066] In a sixth aspect of the present invention, in the vapor deposition mask of the first aspect, the first flat region and the second flat region may be continuous, and when the vapor deposition mask is viewed from the second surface side, two of the through holes adjacent in the second direction may be connected.

[0067] The dimension of the portion of the first flat region overlapping with the first center line in the first direction may be less than 0.90 times the distance in the first direction between the ends of a pair of contours of the first flat region facing the through hole in the first direction.

[0068] In a seventh aspect of the present invention, in the vapor deposition mask of the first aspect or the sixth aspect, the first flat region and the second flat region may be continuous, and when the vapor deposition mask is viewed from the second surface side, two of the through holes adjacent in the second direction may be connected.

[0069] The dimension of the portion of the flat region overlapping with the third center line in the third direction may be less than or equal to 1.00 times the distance in the third direction between the ends of the pair of contours of the flat region facing the through hole in the third direction.

[0070] The third direction may be orthogonal to the first direction.

[0071] The third center line may pass through a midpoint between two of the through holes adjacent to each other in the first direction and extend in the third direction.

[0072] In an eighth aspect of the present invention, in the vapor deposition mask of each of the first to third aspects, the through hole may include: a first recess including a first wall located on the first surface side; and a second recess including a second wall located on the second surface side and connected to the first recess.

[0073] The second wall surface includes a portion that is displaced toward the center point of the through hole as it moves from the second surface side toward the first surface side.

[0074] In a ninth aspect of the present invention, in the vapor deposition mask of each of the first to eighth aspects, when observed from the second surface side using a laser microscope, the flat region may have a pixel value equal to or greater than a reference value.

[0075] In a tenth aspect of the present invention, in the vapor deposition mask according to each of the first to ninth aspects, the thickness of the flat region may be the same as the thickness of the metal plate.

[0076] In an eleventh aspect of the present invention, in the vapor deposition mask according to each of the first to tenth aspects, the thickness of the metal plate may be 30 μm or less.

[0077] A twelfth aspect of the present invention is a method for manufacturing a vapor deposition mask including two or more through-holes, the method comprising:

[0078] a first surface processing step of forming a first recess including a first wall surface on the first surface of the metal plate; and

[0079] The second surface etching step is to etch the area of ​​the second surface of the metal plate located on the opposite side of the first surface that is not covered by the second surface resist layer using an etching solution to form a second recessed portion including a second wall surface on the second surface.

[0080] The through hole has the first recess and a second recess connected to the first recess.

[0081] The second surface etching step is performed so that a flat area remains between two adjacent through holes when the vapor deposition mask is viewed from the second surface side.

[0082] The through holes are arranged alternately in the first direction and the second direction when viewed from above.

[0083] The flat region includes a first flat region located on one side of a first center line between two of the through holes adjacent in the first direction and a second flat region located on the other side of the first center line.

[0084] The first center line passes through the center points of the two through holes adjacent to each other in the first direction.

[0085] The first flat region includes a portion in which the size of the first flat region in the first direction increases as the distance from the first center line increases.

[0086] The second flat region includes a portion in which a size of the second flat region in the first direction increases as the area moves away from the first center line.

[0087] In a thirteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to the twelfth aspect, the second surface etching step may be performed so that the first flat region and the second flat region are continuous.

[0088] In a fourteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to the twelfth aspect, the second surface etching step may be performed so that the first flat region and the second flat region are discontinuous.

[0089] In the 15th embodiment of the present invention, in the manufacturing method of the vapor deposition mask from the above-mentioned 12th embodiment to the above-mentioned 14th embodiment, when the above-mentioned vapor deposition mask is observed from the above-mentioned second surface side, the above-mentioned second surface etching process can be implemented in a manner such that the two above-mentioned through holes adjacent to each other in the above-mentioned second direction are connected.

[0090] In the 16th mode of the present invention, in the manufacturing method of the vapor deposition mask from the above-mentioned 12th mode to the above-mentioned 14th mode, when the above-mentioned vapor deposition mask is observed from the above-mentioned second surface side, the above-mentioned second surface etching process can be implemented in a manner that the two above-mentioned through holes adjacent to each other in the above-mentioned second direction are not connected.

[0091] In the seventeenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to each of the twelfth to sixteenth aspects, the second surface resist layer may include a first region corresponding to the first flat region and a second region corresponding to the second flat region.

[0092] The first region may include a portion in which the size of the first region in the first direction increases as it moves away from the first center line.

[0093] The second region may include a portion in which a size of the second region in the first direction increases as it moves away from the first center line.

[0094] In the eighteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to each of the twelfth to seventeenth aspects, the flat region may exhibit a pixel value greater than a reference value when observed from the second surface side using a laser microscope.

[0095] In a nineteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to each of the twelfth to eighteenth aspects, the thickness of the metal plate may be 30 μm or less.

[0096] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0097] Figure 1 1 is a plan view showing an example of the organic EL display device 100 . Figure 2 Observed from the II-II direction Figure 1 sectional view of an organic EL display device 100 . Figure 1 In FIG, the second electrode layer 141 and the sealing substrate 150 are omitted.

[0098] like Figure 1 and Figure 2 As shown, the organic EL display device 100 may include: a substrate 110; and a first electrode layer 120 located on the first surface 111 side of the substrate 110; a first organic layer 131, a second organic layer 132 and a third organic layer 133 located on the first electrode layer 120; and a second electrode layer 141 located on the first organic layer 131, the second organic layer 132 and the third organic layer 133.

[0099] The substrate 110 may be an insulating plate-shaped member. The substrate 110 is preferably transparent so that light can pass therethrough. The substrate 110 is made of glass, for example.

[0100] The first electrode layer 120 includes a conductive material. For example, the first electrode layer 120 may include a metal, a conductive metal oxide, or other inorganic materials. The first electrode layer 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0101] like Figure 1 As shown by the dotted line, the first electrode layer 120 can be arranged along the first arrangement direction F1 and the second arrangement direction F2 when viewed from above. Figure 1 As shown, the second arrangement direction F2 may be a direction perpendicular to the first arrangement direction F1.

[0102] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be layers containing organic semiconductor materials. Each of the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a light-emitting layer. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, respectively. When viewed from above, the region comprising one first electrode layer 120, one vapor-deposited layer, and the second electrode layer 141 may constitute a unit structure, such as a pixel, of an organic EL display device.

[0103] like Figure 1 As shown, the first organic layer 131, the second organic layer 132, and the third organic layer 133 can be arranged so that organic layers of the same type are not adjacent in the first arrangement direction F1 and the second arrangement direction F2. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 can be arranged in the first arrangement direction F1 and the second arrangement direction F2 so that the second organic layer 132 is located between two first organic layers 131 and the second organic layer 132 is located between two third organic layers 133. In this case, focusing on the second organic layer 132, the second organic layer 132 is arranged in a zigzag pattern at a position shifted by 1 / 2 of the arrangement pitch F3 in the first arrangement direction F1 and by 1 / 2 of the arrangement pitch F4 in the second arrangement direction F2. This arrangement is also called a staggered arrangement.

[0104] The first organic layer 131 , the second organic layer 132 , and the third organic layer 133 may each be a vapor deposition layer formed by allowing a vapor deposition material to adhere to the substrate 110 through through holes of a vapor deposition mask corresponding to the pattern of each organic layer.

[0105] The second electrode layer 141 may include a conductive material such as a metal. Examples of materials constituting the second electrode layer 141 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof.

[0106] Although not shown, the second electrode layer 141 may be formed so that a gap exists between the second electrode layers 141 located on two adjacent organic layers 131, 132, and 133. Such a second electrode layer 141 can be formed by depositing a vapor deposition material onto the substrate 110 through through-holes in a vapor deposition mask corresponding to the pattern of the second electrode layer 141.

[0107] like Figure 2As shown, the organic EL display device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120 in a plan view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap with the end of the first electrode layer 120. In this case, Figure 1 The dotted line marked with the symbol 120 in FIG. 1 represents the outer edge of the region of the first electrode layer 120 that does not overlap with the insulating layer 160. Figure 1 As shown, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may extend to cover the first electrode layer 120 in a plan view. The outlines of the first organic layer 131, the second organic layer 132, and the third organic layer 133 may surround the outline of the first electrode layer 120 in a plan view.

[0108] like Figure 2 As shown, the organic EL display device may include a sealing substrate 150 covering the organic layers 131, 132, 133, and other elements on the substrate 110 on the first surface 111 of the substrate 110. Sealing substrate 150 can prevent water vapor and the like from entering the organic EL display device. This can prevent moisture-induced degradation of the organic layers 131, 132, 133, and the like. Sealing substrate 150 is made of glass, for example.

[0109] Although not shown, the organic EL display device may also include a hole injection layer and a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, and 133. The organic EL display device may also include an electron transport layer and an electron injection layer located between the organic layers 131, 132, and 133 and the second electrode layer 141. The hole injection layer, hole transport layer, electron transport layer, and electron injection layer may also be formed by depositing a vapor deposition material onto the substrate 110 through through-holes in a vapor deposition mask corresponding to the pattern of each layer, similar to the organic layers 131, 132, and 133.

[0110] Next, the vapor deposition device 90 for forming the organic layers 131, 132, 133 and the like constituting the organic EL display device by vapor deposition will be described. Figure 3 As shown, the evaporation device 90 may include a evaporation source 94, a heater 96, and a evaporation mask device 10 therein. The evaporation device 90 may further include an exhaust unit for creating a vacuum atmosphere within the evaporation device 90. The evaporation source 94 is, for example, a crucible, and contains a evaporation material 98, such as an organic light-emitting material. The heater 96 heats the evaporation source 94, evaporating the evaporation material 98 in a vacuum atmosphere. The evaporation mask device 10 is disposed so as to face the crucible 94.

[0111] The deposition mask apparatus 10 includes at least one deposition mask 20. The deposition mask apparatus 10 may also include a frame 15 for supporting the deposition mask 20. The frame 15 can support the deposition mask 20 in a stretched state in its surface direction to prevent the deposition mask 20 from bending.

[0112] like Figure 3 As shown, the vapor deposition mask device 10 is arranged in the vapor deposition device 90 such that the vapor deposition mask 20 faces the substrate 110, which is the object to which the vapor deposition material 98 is attached. The vapor deposition mask 20 includes a plurality of through holes 25 through which the vapor deposition material 98 flying from the vapor deposition source 94 passes. In the following description, the surface of the vapor deposition mask 20 located on the substrate 110 side is referred to as the first surface 51a, and the surface of the vapor deposition mask 20 located on the opposite side of the first surface 51a is referred to as the second surface 51b.

[0113] like Figure 3 As shown, the vapor deposition mask apparatus 10 can include a magnet 93 disposed on the surface of the substrate 110 on the side opposite to the vapor deposition mask 20. The magnet 93 can be used to magnetically attract the vapor deposition mask 20 toward the magnet 93. This can reduce or eliminate the gap between the vapor deposition mask 20 and the substrate 110. This can suppress the generation of shadows during the vapor deposition process and improve the dimensional and positional accuracy of the vapor deposition layer formed on the substrate 110.

[0114] Figure 4 1 is a top view showing the state of the vapor deposition mask device 10 as viewed from the first surface 51a side of the vapor deposition mask 20. Figure 4 As shown, the vapor deposition mask device 10 can have a plurality of vapor deposition masks 20. The shape of the vapor deposition mask 20 can be a rectangle having a length direction and a width direction perpendicular to the length direction. The size of the vapor deposition mask 20 in the length direction is larger than the size of the vapor deposition mask 20 in the width direction. In the following description, the length direction is also referred to as the mask first direction, and the width direction is also referred to as the mask second direction. Multiple vapor deposition masks 20 can also be arranged in the mask second direction N2. The ends 17a and 17b of each vapor deposition mask 20 in the mask first direction N1 can be fixed to the frame 15, for example, by welding. Although not shown in the figure, the vapor deposition mask device 10 can also have a component that is fixed to the frame 15 and partially overlaps with the vapor deposition mask 20 in the thickness direction of the vapor deposition mask 20. Examples of such components include a component that extends along the mask second direction N2 and supports the vapor deposition mask 20, a component that overlaps with the gap between two adjacent vapor deposition masks, etc.

[0115] like Figure 4As shown, the evaporation mask 20 may include a pair of end portions 17a and 17b overlapping the frame 15 and a middle portion 18 located between the end portions 17a and 17b. The middle portion 18 may include at least one active region 22 and a peripheral region 23 located around the active region 22. Figure 4 As shown, the middle portion 18 may include a plurality of effective regions 22 arranged at predetermined intervals along the first mask direction N1. The peripheral region 23 may surround the plurality of effective regions 22.

[0116] When the layers of the organic EL display device 100 are formed using the vapor deposition mask 20, one active area 22 may correspond to one display area of ​​the organic EL display device 100. Alternatively, one active area 22 may correspond to multiple display areas. Although not shown, multiple active areas 22 may be arranged at predetermined intervals in the second direction N2 of the mask.

[0117] The active area 22 may have a rectangular outline in a plan view. The active area 22 may have an outline of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, the active area 22 may have a circular outline.

[0118] Next, the effective area 22 will be described in detail. Figure 5A 51b is a top view showing an example of the effective area 22 of the vapor deposition mask 20 as viewed from the second surface 51b side. Figure 5A As shown in FIG. 1 , an example in which the through holes 25 of the vapor deposition mask 20 are arranged in a staggered arrangement will be described. Such a vapor deposition mask 20 can be used to form a vapor deposition layer in a staggered arrangement such as the second organic layer 132 described above.

[0119] The effective area 22 of the vapor deposition mask 20 includes: a metal plate 51 including a first surface 51a and a second surface 51b; and a plurality of through holes 25 penetrating from the first surface 51a side to the second surface 51b side of the metal plate 51. Figure 5A As shown in FIG. 1 , the through holes 25 can be arranged in a first direction D1 and a second direction D2 intersecting the first direction D1 when viewed from above. The arrangement of the through holes 25 when viewed from above can be staggered like the vapor deposition layer. Specifically, as shown in FIG. Figure 5A As shown, the distance M21 in the first direction D1 between the center points C1 of two adjacent through holes 25 in the second direction D2 may be 1 / 2 of the first center-to-center distance M1 between the center points C1 of two adjacent through holes 25 in the first direction D1.

[0120] Figure 5A In FIG. 1 , symbol D3 indicates a third direction D3 perpendicular to the first direction D1. Symbol D4 indicates a fourth direction D4 symmetrical to the second direction D2 with respect to the third direction D3. Figure 5AAlthough not shown, the distance in the first direction D1 between the center points C1 of two adjacent through holes 25 in the fourth direction D4 may be 1 / 2 of the first center-to-center distance M1.

[0121] The second center-to-center distance M2 between the center points C1 of two adjacent through holes 25 in the second direction D2 may be the same as, greater than, or less than the first center-to-center distance M1.

[0122] The third center-to-center distance M3 between the center points C1 of two adjacent through holes 25 in the third direction D3 may be greater than the first center-to-center distance M1. The ratio M3 / M1 of the third center-to-center distance M3 to the first center-to-center distance M1 may be, for example, greater than 1.1, greater than 1.3, or greater than 1.5. M3 / M1 may be, for example, less than 1.7, less than 2.0, or less than 2.5. The range of M3 / M1 may also be determined by the first group consisting of 1.1, 1.3, and 1.5 and / or the second group consisting of 1.7, 2.0, and 2.5. The range of M3 / M1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of M3 / M1 may also be determined by a combination of any two of the values ​​included in the first group. The range of M3 / M1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it can be 1.1 or more and 2.5 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.7 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.3 or more and 2.5 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.7 or less, 1.3 or more and 1.5 or more, 1.5 or more and 2.5 or less, 1.5 or more and 2.0 or less, 1.5 or more and 1.7 or less, 1.7 or more and 2.5 or less, 1.7 or more and 2.0 or less, or 2.0 or more and 2.5 or less.

[0123] like Figure 5A As shown, the through hole 25 includes a through area 42. The through area 42 is a region that penetrates the metal plate 51 when viewed from above. The through area 42 can be defined by light passing through the through hole 25. For example, parallel light is incident on one side of the first surface 51a or the second surface 51b of the vapor deposition mask 20 along the normal direction of the metal plate 51, and is made to pass through the through hole 25 and be emitted from the other side of the first surface 51a or the second surface 51b. Then, the area occupied by the emitted light in the surface direction of the metal plate 51 is used as the through area 42 of the through hole 25. Alternatively, the through area 42 can be defined by observing the vapor deposition mask 20 using a laser microscope.

[0124] Figure 5B 2 is a diagram for explaining the outline and arrangement of the through-hole region 42 of the through-hole 25 when viewed from above. Figure 5B As shown, the outline of the through-hole region 42 of the through-hole 25 may include a pair of first outlines 42a, a pair of third outlines 42c, two second outlines 42b located between the first outlines 42a and the third outlines 42c, and two fourth outlines 42d located between the first outlines 42a and the third outlines 42c. In the first direction D1, the first outlines 42a of two adjacent through-holes 25 face each other. In the second direction D2, the second outlines 42b of two adjacent through-holes 25 face each other. In the fourth direction D4, the fourth outlines 42d of two adjacent through-holes 25 face each other.

[0125] The first contour 42a may include a portion extending linearly in the third direction D3 or a curved portion. When the first contour 42a includes a curved portion, the curvature of the curved portion of the first contour 42a may be greater than the curvatures of the second contour 42b and the fourth contour 42d.

[0126] The third contour 42c may include a portion extending linearly in the first direction D1 or a curved portion. When the third contour 42c includes a curved portion, the curvature of the curved portion of the third contour 42c may be greater than the curvatures of the second contour 42b and the fourth contour 42d.

[0127] Next, the area between the through holes 25 will be described. Figure 5A As shown, the effective area 22 of the vapor deposition mask 20 can include a flat region 52 located between two adjacent through-holes 25 when the vapor deposition mask 20 is viewed from the second surface 51b. The flat region 52 can also be defined as a region exhibiting pixel values ​​greater than a reference value when the vapor deposition mask 20 is viewed from the second surface 51b using a laser microscope. The reference value is half the maximum value that each pixel in an image captured by the laser microscope can take. The laser microscope and observation conditions used are as follows.

[0128] Laser microscope: VK-X250 manufactured by KEYENCE Co., Ltd.

[0129] Laser: Blue (wavelength 408nm)

[0130] Objective lens: 50 times

[0131] Optical zoom: 1.0x

[0132] ·Measurement mode: surface shape

[0133] Measurement quality: high speed

[0134] Use the Real Peak Detection (RPD) function

[0135] like Figure 5A As shown, the flat area 52 may include a first flat area 53 and a second flat area 54. The first flat area 53 and the second flat area 54 are located between two adjacent through holes 25 in the first direction D1. The first flat area 53 and the second flat area 54 face each other across the first center line L1 in the third direction D3. The first center line L1 is a straight line passing through the center point C1 of the two adjacent through holes 25 in the first direction D1. The first flat area 53 is located on one side of the first center line L1. The second flat area 54 is located on the other side of the first center line L1. Figure 5A In the example shown, one side is the upper side and the other side is the lower side.

[0136] The first flat region 53 and the second flat region 54 are located between the first through-hole 25 and the second through-hole 25 adjacent to each other in the third direction D3. The first flat region 53 is located between the first through-hole 25 and the first center line L1. The second flat region 54 is located between the second through-hole 25 and the first center line L1.

[0137] Figure 5A In the figure, symbol U1 represents the distance between the through-region 42 and the flat region 52 in the first direction D1. Distance U1 is defined by the position of the first center line L1. Symbol U3 represents the distance between the through-region 42 and the flat region 52 in the third direction D3. Distance U3 is defined by the position of the third center line L3.

[0138] Distance U3 may be the same as distance U1. Distance U3 may be greater than distance U1. The ratio (U3 / U1) of distance U3 to distance U1 may be, for example, 1.01 or greater, 1.03 or greater, 1.05 or greater, or 1.10 or greater. Distance U3 may also be less than distance U1. U3 / U1 may be, for example, 0.99 or less, 0.97 or less, 0.95 or less, or 0.90 or less.

[0139] like Figure 5A As shown, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. That is, the first flat region 53 and the second flat region 54 may be connected at the first center line L1. As described later, the first flat region 53 and the second flat region 54 may also be discontinuous. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54.

[0140] like Figure 5AAs shown, there may not be a flat region 52 between two adjacent through-holes 25 in the second direction D2. For example, two adjacent through-holes 25 in the second direction D2 may be connected. In this case, the flat region 52 between two adjacent through-holes 25 in the first direction D1 is independent of other adjacent flat regions 52 in the second direction D2 and the fourth direction D4. Symbol U2 represents the distance between two adjacent flat regions 52 in the second direction D2.

[0141] Next, refer to Figure 6 and Figure 7 The cross-sectional structures of the through-hole 25 and the flat region 52 will be described. Figure 6 It will Figure 5A 1 is a cross-sectional view of the vapor deposition mask 20 when it is cut along the line AA extending in the first direction D1 and passing through the through hole 25 . Figure 7 It will Figure 5A 2 is a cross-sectional view of the deposition mask when it is cut along line BB extending in the second direction D2 and passing through the through hole 25.

[0142] like Figure 6 and Figure 7 As shown, the through hole 25 can have a first recess 30 and a second recess 35. The first recess 30 includes a first wall 31 located on the first surface 51a side. The second recess 35 includes a second wall 36 located on the second surface 51b side. The second recess 35 is connected to the first recess 30 at the connecting portion 41. The first wall 31 is a surface that extends from the first end 32 of the through hole 25 to the second surface 51b side. The first end 32 refers to the end of the through hole 25 on the first surface 51a. The second wall 36 is a surface that is connected to the first wall 31 via the connecting portion 41, and extends from the connecting portion 41 to the second surface 51b side and reaches the second end 37. The second end 37 is the end of the through hole 25 on the second surface 51b. As shown Figure 6 and Figure 7 As shown, the second recess 35 may have a larger dimension than the first recess 30 in the plane direction of the deposition mask 20. For example, the outline of the second recess 35 may surround the outline of the first recess 30 in a plan view.

[0143] As described later, the first recess 30 can be formed by etching the metal plate 51 constituting the vapor deposition mask 20 from the first surface 51a side. The second recess 35 can be formed by etching the metal plate 51 from the second surface 51b side. The connecting portion 41 is the portion connecting the first recess 30 and the second recess 35. At the connecting portion 41, the direction in which the wall surface of the through-hole 25 expands can change. For example, the direction in which the wall surface expands can change discontinuously.

[0144] like Figure 6 and Figure 7As shown, the second wall surface 36 may include a portion that shifts toward the center of the through-hole 25 when viewed from above as it moves from the second surface 51b side toward the first surface 51a side. Similarly, the first wall surface 31 may include a portion that shifts toward the center of the through-hole 25 when viewed from above as it moves from the first surface 51a side toward the second surface 51b side. In this case, the opening area of ​​the through-hole 25 can be minimized at the connecting portion 41. In other words, the connecting portion 41 can define the outline of the aforementioned through-hole region 42.

[0145] exist Figure 5A and Figure 6 In FIG, symbol S1 represents the maximum value of the size of the through region 42 in the first direction D1. Figure 5A and Figure 7 In FIG. 4 , symbol S2 represents the maximum size of the through region 42 in the second direction D2. The size S2 may be larger than the size S1.

[0146] The ratio S2 / S1 of the dimension S2 to the dimension S1 may be, for example, 1.01 or more, 1.05 or more, or 1.10 or more. S2 / S1 may be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The range of S2 / S1 may also be determined by the first group consisting of 1.01, 1.05, and 1.10 and / or the second group consisting of 1.20, 1.30, and 1.50. The range of S2 / S1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S2 / S1 may also be determined by a combination of any two of the values ​​included in the first group. The range of S2 / S1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, 1.01 or more and 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, 1.05 or more and 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1.30 or less.

[0147] Figure 5AIn the figure, symbol S3 represents the maximum value of the size of the through-region 42 in the third direction D3. Dimension S3 may be greater than dimension S1. The ratio S3 / S1 of dimension S3 to dimension S1 may be, for example, greater than 1.01, greater than 1.05, or greater than 1.10. S3 / S1 may be, for example, less than 1.20, less than 1.30, or less than 1.50. The range of S3 / S1 may also be determined by the first group consisting of 1.01, 1.05, and 1.10 and / or the second group consisting of 1.20, 1.30, and 1.50. The range of S3 / S1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S3 / S1 may also be determined by a combination of any two of the values ​​included in the first group. The range of S3 / S1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, 1.01 or more and 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, 1.05 or more and 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1.30 or less.

[0148] Although not shown, the size S3 may be the same as the size S1 or may be smaller than the size S1.

[0149] Next, the flat region 52 will be described. Figure 6 As shown, the flat region 52 is located on the second surface 51b of the metal plate 51. The thickness T2 of the flat region 52 can be the same as the thickness T1 of the metal plate 51. For example, the ratio T2 / T1 of thickness T1 to thickness T2 can be 0.95 to 1.05. The thickness T1 of the metal plate 51 is the thickness of the surrounding region 23 of the deposition mask 20, where the first recess 30 and the second recess 35 are not formed.

[0150] The thickness T1 of the metal plate 51 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. The thickness T1 of the metal plate 51 may be, for example, 20 μm or less, 25 μm or less, 30 μm or less, or 50 μm or less. The range of the thickness T1 of the metal plate 51 may also be determined by the first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm and / or the second group consisting of 20 μm, 25 μm, 30 μm, and 50 μm. The range of the thickness T1 of the metal plate 51 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T1 of the metal plate 51 may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness T1 of the metal plate 51 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 8 μm to 50 μm, 8 μm to 30 μm, 8 μm to 25 μm, 8 μm to 20 μm, 8 μm to 15 μm, 8 μm to 13 μm, 8 μm to 10 μm, 10 μm to 50 μm, 10 μm to 30 μm, 10 μm to 25 μm, 10 μm to 20 μm, 10 μm to 15 μm, 10 μm to 13 μm, 13 μm to 50 μm, or 10 μm to 30 μm. It can be above 13μm and below 30μm, can be above 13μm and below 25μm, can be above 13μm and below 20μm, can be above 13μm and below 15μm, can be above 15μm and below 50μm, can be above 15μm and below 30μm, can be above 15μm and below 25μm, can be above 15μm and below 20μm, can be above 20μm and below 50μm, can be above 20μm and below 30μm, can be above 20μm and below 25μm, can be above 25μm and below 50μm, can be above 25μm and below 30μm, can be above 30μm and below 50μm.

[0151] By setting the thickness T1 of the metal plate 51 to 50 μm or less, the deposition material 98 can be prevented from adhering to the first wall surface 31 and the second wall surface 36 of the through-hole 25 before passing through the through-hole 25. This improves the utilization efficiency of the deposition material 98. By setting the thickness T1 of the metal plate 51 to 8 μm or more, the strength of the deposition mask 20 can be ensured, thereby preventing damage and deformation of the deposition mask 20.

[0152] like Figure 7As shown, the portion of the second surface 51b located between two adjacent through holes 25 in the second direction D2 is represented by symbol 57, which is called a connecting portion. In this embodiment, the connecting portion 57 is a non-flat area. For example, the maximum value T3 of the thickness of the connecting portion 57 is less than the thickness T1 of the metal plate 51. Figure 7 As shown, the surface of the connecting portion 57 on the second surface 51 b side may be curved so as to be convex toward the second surface 51 b side in a cross-sectional view.

[0153] The ratio of the maximum value T3 of the thickness of the connecting portion 57 to the thickness T1 of the metal plate 51 can be, for example, 0.10 or more, 0.30 or more, 0.50 or more, or 0.60 or more. T3 / T1 can be, for example, 0.70 or less, 0.80 or less, 0.90 or less, or 0.97 or less. The range of T3 / T1 can also be determined by the first group consisting of 0.10, 0.30, 0.50, and 0.60 and / or the second group consisting of 0.70, 0.80, 0.90, and 0.97. The range of T3 / T1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T1 can also be determined by a combination of any two of the values ​​included in the first group. The range of T3 / T1 can also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.10 or more and 0.97 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.97 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or more, or 0.50 or more and 0.97 or more. Below, it can be 0.50 or more and 0.90, it can be 0.50 or more and 0.80, it can be 0.50 or more and 0.70, it can be 0.50 or more and 0.60, it can be 0.60 or more and 0.97, it can be 0.60 or more and 0.90, it can be 0.60 or more and 0.80, it can be 0.60 or more and 0.70, it can be 0.70 or more and 0.97, it can be 0.70 or more and 0.90, it can be 0.70 or more and 0.80, it can be 0.80 or more and 0.97, it can be 0.80 or more and 0.90 or 0.97.

[0154] The thicknesses T1, T2, and T3 are calculated by observing a cross section of the vapor deposition mask 20 using a scanning electron microscope. For example, in a sample of the vapor deposition mask 20 including the active area 22 and the peripheral area 23 and including a cross section cut along the first direction D1, the thicknesses T1 and T2 are measured at five locations, and the average values ​​are calculated to calculate the thicknesses T1 and T2. In a sample of the vapor deposition mask 20 including the flat area 52 and including a cross section cut along the second direction D2, the thickness T3 is measured at five locations, and the average value is calculated to calculate the thickness T3. A scanning electron microscope manufactured by ZEISS, ULTRA55, can be used as the scanning electron microscope.

[0155] Figure 8 It will Figure 5A A cross-sectional view of the vapor deposition mask when it is cut along the CC line extending in the second direction D2 and passing through the flat region 52. Figure 8 In the cross-sectional view of , the connecting portion 57 overlaps with the recess 52 a between two adjacent flat regions 52 in the second direction D2.

[0156] Next, refer to Figure 5A and Figure 9 The shape of the flat region 52 in a plan view will be further described. Figure 9 It will Figure 5A FIG. 1 is an enlarged plan view showing the first flat region 53 and the second flat region 54 .

[0157] like Figure 5A As shown, the first flat area 53 may include a portion whose dimension E1 increases as it moves away from the first center line L1 upward. Dimension E1 is the dimension of the first flat area 53 in the first direction D1. The second flat area 54 may include a portion whose dimension E2 increases as it moves away from the first center line L1 downward. Dimension E2 is the dimension of the second flat area 54 in the first direction D1. For example, Figure 5A As shown, a portion of the contour of the flat region 52 facing the through hole 25 in the first direction D1 may be curved so as to be recessed toward the center of the flat region 52 .

[0158] like Figure 5A As shown, the flat area 52 may include a portion whose size G1 increases as it moves away from the third center line L3 in the first direction D1. The size G1 is the size of the flat area 52 in the third direction D3. For example, Figure 5A As shown, the portion of the contour of the flat region 52 facing the through-hole 25 in the third direction D3 may be curved so as to be recessed toward the center of the flat region 52. The third center line L3 is a straight line that passes through the midpoint C2 between two adjacent through-holes 25 in the first direction D1 and extends in the third direction D3.

[0159] Figure 9 In FIG. 1 , symbol P1 represents the size of the portion of the first flat region 53 that overlaps with the first center line L1 in the first direction D1. Symbol P2 represents the distance between the end portions Pa and Pb of a pair of first contours 53a of the first flat region 53 in the first direction D1. The end portions Pa and Pb are located away from the first center line L1. The first contour 53a is the portion of the contour of the first flat region 53 that faces the through hole 25 in the first direction D1. Figure 9 As shown, dimension P1 may be smaller than distance P2.

[0160] The ratio of the dimension P1 to the distance P2 may be, for example, greater than 0.01, greater than 0.10, greater than 0.30, or greater than 0.45. P1 / P2 may be, for example, less than 0.60, less than 0.70, less than 0.80, or less than 0.90. The range of P1 / P2 may also be determined by the first group consisting of 0.01, 0.10, 0.30, and 0.45 and / or the second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of P1 / P2 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of P1 / P2 may also be determined by a combination of any two of the values ​​included in the first group. The range of P1 / P2 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, 0.01 or more and 0.60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.90 or more. It can be 0.30 or more and 0.80 or less, it can be 0.30 or more and 0.70 or less, it can be 0.30 or more and 0.60 or less, it can be 0.30 or more and 0.45 or less, it can be 0.45 or more and 0.90 or less, it can be 0.45 or more and 0.80 or less, it can be 0.45 or more and 0.70 or less, it can be 0.45 or more and 0.60 or less, it can be 0.60 or more and 0.90 or less, it can be 0.60 or more and 0.80 or less, it can be 0.60 or more and 0.70 or less, it can be 0.70 or more and 0.90 or less, it can be 0.70 or more and 0.80 or less, it can be 0.80 or more and 0.90 or less.

[0161] Figure 9 In the figure, symbol P3 represents the dimension of the portion of the second flat region 54 that overlaps with the first center line L1 in the first direction D1. Symbol P4 represents the distance in the first direction D1 between the ends Pc and Pd of the pair of first contours 54a of the second flat region 54. Ends Pc and Pd are located away from the first center line L1. The first contour 54a is the portion of the contour of the second flat region 54 that faces the through-hole 25 in the first direction D1. When the first flat region 53 and the second flat region 54 are continuous, the dimension P3 of the second flat region 54 is equal to the dimension P1 of the first flat region 53 described above.

[0162] The numerical range of the ratio of the dimension P3 to the distance P4 in the second flat region 54 is the same as the numerical range of the ratio of the dimension P1 to the distance P2 in the first flat region 53 , and therefore description thereof is omitted.

[0163] Figure 9 In FIG. 1 , symbol Q1 represents the dimension of the portion of the flat region 52 that overlaps with the third center line L3 in the third direction D3. Symbol Q2 represents the distance in the third direction D3 between the end portions Qa and Qb of a pair of second contours 52b of the flat region 52 including the first flat region 53 and the second flat region 54. The end portions Qa and Qb are located away from the first center line L1. The second contour 52b is the portion of the contour of the flat region 52 that faces the through hole 25 in the third direction D3. Figure 9 As shown, the dimension Q1 may be smaller than the distance Q2. Alternatively, as described later, the dimension Q1 may be the same as the distance Q2.

[0164] The ratio of dimension Q1 to distance Q2 may be, for example, greater than 0.30, greater than 0.40, greater than 0.50, or greater than 0.60. Q1 / Q2 may be, for example, less than 0.70, less than 0.80, less than 0.90, or less than 1.00. The range of Q1 / Q2 may also be determined by the first group consisting of 0.30, 0.40, 0.50, and 0.60 and / or the second group consisting of 0.70, 0.80, 0.90, and 1.00. The range of Q1 / Q2 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of Q1 / Q2 may also be determined by a combination of any two of the values ​​included in the first group. The range of Q1 / Q2 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.30 to 1.00, 0.30 to 0.90, 0.30 to 0.80, 0.30 to 0.70, 0.30 to 0.60, 0.30 to 0.50, 0.30 to 0.40, 0.40 to 1.00, 0.40 to 0.90, 0.40 to 0.80, 0.40 to 0.70, 0.40 to 0.60, 0.40 to 0.50, 0.50 to 1.00. It can be 0.50 or more and 0.90 or less, it can be 0.50 or more and 0.80 or less, it can be 0.50 or more and 0.70 or less, it can be 0.50 or more and 0.60 or less, it can be 0.60 or more and 1.00 or less, it can be 0.60 or more and 0.90 or less, it can be 0.60 or more and 0.80 or less, it can be 0.60 or more and 0.70 or less, it can be 0.70 or more and 1.00 or less, it can be 0.70 or more and 0.90 or less, it can be 0.70 or more and 0.80 or less, it can be 0.80 or more and 1.00 or less, it can be 0.80 or more and 0.90 or less, it can be 0.90 or more and 1.00 or less.

[0165] Dimension Q1 may be greater than dimension P1. That is, the flat region 52 may have a shape extending along the third direction D3. The ratio Q1 / P1 of dimension Q1 to dimension P1 may be, for example, greater than 1.05, greater than 1.2, greater than 1.5, or greater than 2.0. Q1 / P1 may be, for example, less than 2.5, less than 5.0, less than 10, or less than 50. The range of Q1 / P1 may also be determined by the first group consisting of 1.05, 1.2, 1.5, and 2.0 and / or the second group consisting of 2.5, 5.0, 10, and 50. The range of Q1 / P1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of Q1 / P1 may also be determined by a combination of any two of the values ​​included in the first group. The range of Q1 / P1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 1.05 or more and 50 or less, 1.05 or more and 10 or less, 1.05 or more and 5.0 or less, 1.05 or more and 2.5 or less, 1.05 or more and 2.0 or less, 1.05 or more and 1.5 or less, 1.05 or more and 1.2 or less, 1.2 or more and 50 or less, 1.2 or more and 10 or less, 1.2 or more and 5.0 or less, 1.2 or more and 2.5 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, or 1.5 or more. Above 50 or less, it can be above 1.5 or below 10, it can be above 1.5 or below 5.0, it can be above 1.5 or below 2.5, it can be above 1.5 or below 2.0, it can be above 2.0 or below 50, it can be above 2.0 or below 10, it can be above 2.0 or below 5.0, it can be above 2.0 or below 2.5, it can be above 2.50 or below, it can be above 2.5 or below 10, it can be above 2.5 or below 5.0, it can be above 5.0 or below 50, it can be above 5.0 or below 10, it can be above 10 or above 50.

[0166] Dimension Q2 may be greater than dimension P2. The range of numerical values ​​for the ratio Q2 / P2 of dimension Q2 to dimension P2 may be the same as the range of numerical values ​​for Q1 / P1 described above. As with the case of dimensions Q1 and P1, the fact that dimension Q2 is greater than dimension P2 means that flat region 52 has a shape extending along third direction D3.

[0167] The third direction D3 can coincide with the first mask direction N1. For example, the angle formed between the third direction D3 and the first mask direction N1 can be less than 5.0 degrees, less than 3.0 degrees, less than 1.0 degrees, less than 0.5 degrees, or less than 0.1 degrees. The first mask direction N1 can be determined based on the direction in which the side edge 17c of the deposition mask 20 extends. If the deposition mask 20 includes two alignment marks arranged along the side edge 17c, the first mask direction N1 can also be determined based on the direction in which a straight line extending through the centers of the two alignment marks extends.

[0168] The alignment of the third direction D3 with the first mask direction N1 means that the longitudinal direction of the flat region 52 is aligned with the longitudinal direction of the vapor deposition mask 20. Tension is sometimes applied to the vapor deposition mask 20 fixed to the frame 15 in the longitudinal direction. When the longitudinal direction of the flat region 52 is aligned with the longitudinal direction of the vapor deposition mask 20, the shape of the flat region 52 can be suppressed from changing due to the tension when viewed from above. This can, for example, suppress the formation of wrinkles in the vapor deposition mask 20 due to the tension.

[0169] The larger the ratio of the area of ​​the flat region 52 to the area of ​​the effective region 22, the higher the strength of the vapor deposition mask 20. The higher the strength of the vapor deposition mask 20, the higher the operability of the process using the vapor deposition mask 20. For example, it is possible to prevent the vapor deposition mask 20 from being deformed or damaged when transporting the vapor deposition mask 20. On the other hand, the larger the ratio of the area of ​​the flat region 52 to the area of ​​the effective region 22, the more likely it is to produce shadows. The dimensions P1, P2, Q1, Q2, etc. of the flat region 52 are determined in consideration of strength and shadows. The following describes an example of the relationship between the dimensions of the flat region 52 and other dimensions.

[0170] Figure 5A As the distances U1, U2, and U3 shown are increased, shadows are suppressed, but the strength of the vapor deposition mask 20 decreases. The size of the flat region 52 can also be determined in consideration of these distances.

[0171] The ratio U2 / Q1 of the distance U2 to the dimension Q1 can be, for example, greater than 0.05, greater than 0.15, greater than 0.3, or greater than 0.5. U2 / Q1 can be, for example, less than 0.8, less than 1.0, less than 1.2, or less than 1.5. The range of U2 / Q1 can also be determined by the first group consisting of 0.05, 0.15, 0.3, and 0.5 and / or the second group consisting of 0.8, 1.0, 1.2, and 1.5. The range of U2 / Q1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U2 / Q1 can also be determined by a combination of any two of the values ​​included in the first group. The range of U2 / Q1 can also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.05 or more and 1.5 or less, 0.05 or more and 1.2 or less, 0.05 or more and 1.0 or less, 0.05 or more and 0.8 or less, 0.05 or more and 0.5 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.15 or less, 0.15 or more and 1.5 or less, 0.15 or more and 1.2 or less, 0.15 or more and 1.0 or less, 0.15 or more and 0.8 or less, 0.15 or more and 0.5 or less, 0.15 or more and 0.3 or less, or 0. 3 or more and 1.5 or less, can be 0.3 or more and 1.2 or less, can be 0.3 or more and 1.0 or less, can be 0.3 or more and 0.8 or less, can be 0.3 or more and 0.5 or less, can be 0.5 or more and 1.5 or less, can be 0.5 or more and 1.2 or less, can be 0.5 or more and 1.0 or less, can be 0.5 or more and 0.8 or less, can be 0.8 or more and 1.5 or less, can be 0.8 or more and 1.2 or less, can be 0.8 or more and 1.0 or less, can be 1.0 or more and 1.5 or less, can be 1.0 or more and 1.2 or less, can be 1.2 or more and 1.5 or less.

[0172] As the numerical range of the ratio U2 / Q2 of the distance U2 to the dimension Q2 , the numerical range of U2 / Q1 described above can be adopted.

[0173] The ratio U3 / Q1 of the distance U3 to the dimension Q1 may be, for example, greater than 0.02, greater than 0.05, greater than 0.10, or greater than 0.20. U3 / Q1 may be, for example, less than 0.30, less than 0.50, less than 0.70, or less than 1.00. The range of U3 / Q1 may also be determined by the first group consisting of 0.02, 0.05, 0.10, and 0.20 and / or the second group consisting of 0.30, 0.50, 0.70, and 1.00. The range of U3 / Q1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U3 / Q1 may also be determined by a combination of any two of the values ​​included in the first group. The range of U3 / Q1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.02 or more and 1.00 or less, 0.02 or more and 0.70 or less, 0.02 or more and 0.50 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 1.00 or less, 0.05 or more and 0.70 or less, 0.05 or more and 0.50 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 1.00 or less. The value of the present invention may be greater than or equal to 0.10 and less than or equal to 0.70, greater than or equal to 0.10 and less than or equal to 0.50, greater than or equal to 0.10 and less than or equal to 0.30, greater than or equal to 0.10 and less than or equal to 0.20, greater than or equal to 0.20 and less than or equal to 1.00, greater than or equal to 0.20 and less than or equal to 0.70, greater than or equal to 0.20 and less than or equal to 0.50, greater than or equal to 0.20 and less than or equal to 0.30, greater than or equal to 0.30 and less than or equal to 1.00, greater than or equal to 0.30 and less than or equal to 0.70, greater than or equal to 0.30 and less than or equal to 0.50, greater than or equal to 0.50 and less than or equal to 1.00, greater than or equal to 0.50 and less than or equal to 0.70, and greater than or equal to 0.70 and less than or equal to 1.00.

[0174] As the numerical range of the ratio U3 / Q2 of the distance U3 to the dimension Q2 , the numerical range of U3 / Q1 described above can be adopted.

[0175] Figure 5A As the through-hole sizes S1, S2, and S3 shown are larger, the shadow effect is reduced, but the strength of the vapor deposition mask 20 is reduced. The size of the flat region 52 can also be determined in consideration of the size of the through-hole.

[0176] The ratio S3 / Q1 of dimension S3 to dimension Q1 may be, for example, 0.5 or more, 0.6 or more, 0.7 or more, or 0.8 or more. S3 / Q1 may be, for example, 1.0 or less, 1.2 or less, 1.5 or less, or 2.0 or less. The range of S3 / Q1 may also be determined by the first group consisting of 0.5, 0.6, 0.7, and 0.8 and / or the second group consisting of 1.0, 1.2, 1.5, and 2.0. The range of S3 / Q1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S3 / Q1 may also be determined by a combination of any two of the values ​​included in the first group. The range of S3 / Q1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.2 or less, 0.5 or more and 1.0 or less, 0.5 or more and 0.8 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 2.0 or less, 0.6 or more and 1.5 or less, 0.6 or more and 1.2 or less, 0.6 or more and 1.0 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, 0.7 or more and 2.0 or less It can be above 0.7 and below 1.5, it can be above 0.7 and below 1.2, it can be above 0.7 and below 1.0, it can be above 0.7 and below 0.8, it can be above 0.8 and below 2.0, it can be above 0.8 and below 1.5, it can be above 0.8 and below 1.2, it can be above 0.8 and below 1.0, it can be above 1.0 and below 2.0, it can be above 1.0 and above 1.5, it can be above 1.0 and below 1.2, it can be above 1.2 and below 2.0, it can be above 1.2 and below 1.5, it can be above 1.5 and below 2.0.

[0177] As the numerical range of the ratio S3 / Q2 of the dimension S3 to the dimension Q2 , the numerical range of S3 / Q1 described above can be adopted.

[0178] The above-mentioned dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 are calculated by observing the vapor deposition mask 20 from the second surface 51b side using a laser microscope. For example, the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 are calculated by measuring the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 at five locations on a sample of the vapor deposition mask 20 including the effective area 22 and calculating the average value of these measurements. The laser microscope used and the observation conditions are as follows.

[0179] Laser microscope: VK-X250 manufactured by KEYENCE Co., Ltd.

[0180] Laser: Blue (wavelength 408nm)

[0181] Objective lens: 50 times

[0182] Optical zoom: 1.0x

[0183] ·Measurement mode: surface shape

[0184] Measurement quality: high speed

[0185] Use the Real Peak Detection (RPD) function

[0186] Next, the main reference Figures 10 to 15 A method of manufacturing the vapor deposition mask 20 by processing the metal plate 51 will be described. Figure 10 1 is a diagram showing a manufacturing apparatus 70 for manufacturing a vapor deposition mask 20 using a metal plate 51. First, a roll 50 including a metal plate 51 wound around a shaft 51x is prepared. Next, the metal plate 51 of the roll 50 is unwound from the shaft 51x, and the metal plate 51 is sequentially directed to the Figure 10 The resist film forming device 71, the exposure / developing device 72, the etching device 73, the film stripping device 74 and the separating device 75 are shown to be transported. Figure 10, an example is shown in which the metal plate 51 is transported along its longitudinal direction T and thus moves between the devices, but the present invention is not limited thereto. For example, the metal plate 51 provided with the resist layer may be rewound around the shaft member 51x in the resist film forming device 71, and the metal plate 51 in a wound state may be supplied to the exposure / development device 72. The metal plate 51 provided with the resist layer that has been exposed / developed in the exposure / development device 72 may be rewound around the shaft member 51x and then supplied to the etching device 73 in a wound state. The metal plate 51 etched in the etching device 73 may be rewound around the shaft member 51x and then supplied to the film stripping device 74 in a wound state. The metal plate 51 from which the resin 58, etc., described later, has been removed in the film stripping device 74 may be rewound around the shaft member 51x and then supplied to the separation device 75 in a wound state.

[0187] The resist film forming device 71 forms a resist layer on the first surface and the second surface of the metal plate 51. The exposure / development device 72 performs exposure processing and development processing on the resist layer to pattern the resist layer.

[0188] The etching device 73 etches the metal plate 51 using the patterned resist layer as a mask, thereby forming through-holes 25 in the metal plate 51. In this embodiment, a plurality of through-holes 25 corresponding to the plurality of vapor deposition masks 20 are formed in the metal plate 51. In other words, the plurality of vapor deposition masks 20 are distributed over the metal plate 51. For example, a plurality of effective areas 22 are arranged in the width direction of the metal plate 51, and a plurality of effective areas 22 for the vapor deposition masks 20 are arranged in the length direction of the metal plate 51, thereby forming a plurality of through-holes 25 in the metal plate 51. The film stripping device 74 strips away components such as the resist pattern and the resin 58 described later, which are provided to protect the unetched portion of the metal plate 51 from damage by the etching solution.

[0189] The separating device 75 performs a separating step of separating the portion of the metal plate 51 where the plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed, from the metal plate 51. In this way, the vapor deposition mask 20 can be obtained.

[0190] Each step of the method for manufacturing the vapor deposition mask 20 will be described in detail.

[0191] First, a wound body 50 including a metal plate 51 wound around a shaft member 51x is prepared. The thickness of the metal plate 51 is, for example, 5 μm to 50 μm. Methods for producing the metal plate 51 having a desired thickness include rolling, plating, and the like.

[0192] For example, the metal plate 51 may be made of an iron alloy containing nickel. The iron alloy forming the metal plate may also contain cobalt in addition to nickel. For example, the material for the metal plate 51 may include an iron alloy having a combined nickel and cobalt content of 30% to 54% by mass, and a cobalt content of 0% to 6% by mass. Specific examples of iron alloys containing nickel or nickel and cobalt include Invar materials containing 34% to 38% nickel, Super Invar materials containing cobalt in addition to 30% to 34% nickel, and low thermal expansion Fe-Ni plating alloys containing 38% to 54% nickel.

[0193] Next, a first-side resist layer 61 is formed on the first side 51a of the metal plate 51 unwound from the unwinding device, and a second-side resist layer 62 is formed on the second side 51b. For example, the first-side resist layer 61 and the second-side resist layer 62 can be formed by attaching a dry film containing a photosensitive resist material such as an acrylic photocurable resin to the first side 51a and the second side 51b of the metal plate 51. Alternatively, a coating liquid containing a negative-type photosensitive resist material can be applied to the first side 51a and the second side 51b of the metal plate 51 and then dried to form the first-side resist layer 61 and the second-side resist layer 62.

[0194] The thickness of the resist layers 61 and 62 may be, for example, 1 μm or more, 3 μm or more, 5 μm or more, or 7 μm or more. The thickness of the resist layers 61 and 62 may be, for example, 10 μm or less, 15 μm or less, 20 μm or less, or 25 μm or less. The range of the thickness of the resist layers 61 and 62 may also be determined by the first group consisting of 1 μm, 3 μm, 5 μm, and 7 μm and / or the second group consisting of 10 μm, 15 μm, 20 μm, and 25 μm. The range of the thickness of the resist layers 61 and 62 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the resist layers 61 and 62 may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness of the resist layers 61 and 62 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 1 μm or more and 25 μm or less, 1 μm or more and 20 μm or less, 1 μm or more and 15 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 7 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 20 μm or less, 3 μm or more and 15 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, or 5μm or more and 20μm or less, can be 5μm or more and 15μm or less, can be 5μm or more and 10μm or less, can be 5μm or more and 7μm or less, can be 7μm or more and 25μm or less, can be 7μm or more and 20μm or less, can be 7μm or more and 15μm or less, can be 7μm or more and 10μm or more and 25μm or less, can be 10μm or more and 20μm or less, can be 10μm or more and 15μm or less, can be 15μm or more and 25μm or less, can be 15μm or more and 20μm or more, can be 20μm or more and 25μm or less.

[0195] Next, the resist layers 61 and 62 are exposed and developed using an exposure / development device 72 . Figure 12 1 is a cross-sectional view showing resist layers 61 and 62 patterned by exposure and development.

[0196] Next, the metal plate 51 is etched using the etching device 73, using the resist layers 61 and 62 as masks. Specifically, first, the first surface etching step is performed. Figure 13As shown, the first-side etching step includes etching the area of ​​the first surface 51a of the metal plate 51 that is not covered by the first-side resist layer 61 using a first etching liquid. For example, the first etching liquid is sprayed onto the first surface 51a of the metal plate 51 through the first-side resist layer 61 from a nozzle arranged on the side opposite to the first surface 51a of the conveyed metal plate 51. At this time, the second surface 51b of the metal plate 51 may be covered with a film or the like that is resistant to the first etching liquid.

[0197] The result of the etching process on the first side is as follows: Figure 13 As shown, erosion by the first etching solution progresses in the area of ​​the metal plate 51 not covered by the first surface resist layer 61. Consequently, a plurality of first recesses 30 are formed on the first surface 51a of the metal plate 51. For example, an etching solution containing ferric chloride solution and hydrochloric acid is used as the first etching solution.

[0198] Then, if Figure 14 As shown, the second side etching process is performed. The second side etching process includes etching the area of ​​the second side 51b of the metal plate 51 that is not covered by the second side anti-etching layer 62 using a second etching liquid. As a result, a second recess 35 is formed on the second side 51b of the metal plate 51. The second side etching process is performed until the first recess 30 and the second recess 35 are connected to each other, thereby forming a through hole 25. As the second etching liquid, similar to the above-mentioned first etching liquid, for example, an etching liquid containing ferric chloride solution and hydrochloric acid is used. When etching the second side 51b, as shown in FIG. Figure 14 As shown, the first recess 30 may be covered with a resin 58 resistant to the second etching solution.

[0199] like Figure 14 As shown, the second side etching process can be performed in such a manner that the second side 51b of the metal plate 51 partially remains between two second recesses 35 adjacent in a specific direction. For example, the second side etching process can be performed in such a manner that the second side 51b of the metal plate 51 partially remains between two second recesses 35 adjacent in the first direction D1. Figure 6 As shown, a flat region 52 located between two through holes 25 adjacent in the first direction D1 can be obtained. The second surface etching step may be performed so that the first flat region 53 and the second flat region 54 of the flat region 52 are continuous.

[0200] like Figure 15 As shown, the two-side etching process can be performed in such a manner that no second surface 51b remains between two second recesses 35 adjacent in a specific direction. For example, the second-side etching process can be performed in such a manner that no second surface 51b remains between two second recesses 35 adjacent in the second direction D2. Figure 7As shown, a non-flat connecting portion 57 located between two through-holes 25 adjacent to each other in the second direction D2 can be obtained.

[0201] Next, a stripping process is performed to remove the resin 58 and the resist layers 61 and 62 from the metal plate 51 using a stripping device 74. Next, a separation process is performed to separate the portion of the metal plate 51 where the plurality of through-holes 25 corresponding to one vapor deposition mask 20 are formed from the metal plate 51 using a separation device 75. In this way, the vapor deposition mask 20 is obtained.

[0202] In the vapor deposition mask 20 of this embodiment, as described above, the dimension E1 of the first flat region 53 and the dimension E2 of the second flat region 54 in the first direction D1 increase as they move away from the first center line L1. This structure is achieved by appropriately adjusting the shape of the resist layers 61 and 62 when viewed from above and the etching conditions. Examples of etching conditions include temperature, time, and the composition of the etching solution.

[0203] Next, a method for manufacturing an organic EL display device 100 using the vapor deposition mask 20 of the present embodiment is described. The manufacturing method of the organic EL display device 100 includes a vapor deposition step of vapor-depositing a vapor deposition material 98 onto a substrate 110 using the vapor deposition mask 20. In the vapor deposition step, first, the vapor deposition mask device 10 is arranged so that the vapor deposition mask 20 and the substrate 110 face each other. At this time, the magnet 93 can be used to make the vapor deposition mask 20 and the substrate 110 fit tightly. In addition, the interior of the vapor deposition device 90 is made into a vacuum atmosphere. In this state, by evaporating the vapor deposition material 98 and flying toward the substrate 110 through the vapor deposition mask 20, the vapor deposition material 98 can be attached to the substrate 110 in a pattern corresponding to the through hole 25 of the vapor deposition mask 20 to form a vapor deposition layer.

[0204] In the vapor deposition mask 20 of this embodiment, the first flat area 53 and the second flat area 54 include portions where the dimensions E1 and E2 increase as they move away from the first center line L1. Therefore, the vapor deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined relative to the normal direction of the metal plate 51, can be prevented from adhering to the flat area 52 or the second wall surface 36 of the second recess 35. As a result, the generation of shadows around the first contour 42a of the through hole 25 can be suppressed. By increasing the dimensions E1 and E2 at positions away from the first center line L1, the area of ​​the flat area 52 can be increased compared to a case where the dimensions E1 and E2 are fixed regardless of position. As a result, the strength of the vapor deposition mask 20 can be improved, thereby preventing the vapor deposition mask 20 from being damaged during transportation, etc.

[0205] In the vapor deposition mask 20 of this embodiment, a non-flat connecting portion 57 exists between two adjacent through-holes 25 in the second direction D2. In other words, the two adjacent through-holes 25 in the second direction D2 are connected. Therefore, the vapor deposition material 98, which has a velocity component in the second direction D2 and moves in a direction oblique to the normal direction of the metal plate 51, can be prevented from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This can also prevent shadows from forming around the second contour 42b of the through-hole 25.

[0206] Various modifications can be made to the above-described embodiment. Other embodiments will be described below with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, parts that can be configured similarly to the above-described embodiment are denoted by the same reference numerals as those used for corresponding parts in the above-described embodiment, and duplicate descriptions are omitted. Where it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, their descriptions may be omitted.

[0207] Figure 16 1 is a top view showing an example of the flat region 52 on the second surface 51b side of the vapor deposition mask 20. In the above embodiment, the size Q1 of the flat region 52 is smaller than the distance Q2 between the ends Qa and Qb of the flat region 52. However, this is not limited to this. Figure 16 As shown, the dimension Q1 may be equal to the distance Q2. For example, the second contour 52b may extend linearly along the first direction D1. In this case, Q1 / Q2 is 1.00.

[0208] exist Figure 16 In the illustrated vapor deposition mask 20 having the flat region 52, as in the aforementioned embodiment, the first flat region 53 may include a portion whose dimension E1 increases as it moves upward from the first centerline L1. The second flat region 54 may include a portion whose dimension E2 increases as it moves downward from the first centerline L1. This prevents the vapor deposition material 98, which has a velocity component in the first direction D1 and moves in a direction oblique to the normal direction of the metal plate 51, from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. Consequently, the formation of shadows around the first contour 42a of the through-hole 25 can be suppressed. By increasing the dimensions E1 and E2 of the first and second flat regions 53 and 54 in the first direction D1 as they move away from the first centerline L1, the area of ​​the flat region 52 can be increased compared to a case where the dimensions E1 and E2 are fixed independently of position. This improves the strength of the vapor deposition mask 20, thereby preventing damage to the vapor deposition mask 20 during transportation, etc.

[0209] Figure 171 is a top view showing an example of the flat region 52 on the second surface 51b side of the vapor deposition mask 20. In the above embodiment, an example is shown in which the first flat region 53 and the second flat region 54 are continuous in the third direction D3. However, this is not limited to this. Figure 17 As shown, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54. For example, Figure 17 As shown, the region between the first flat region 53 and the second flat region 54 that overlaps with the first center line L1 may be a non-flat region.

[0210] exist Figure 17 In the illustrated example, similarly to the above embodiment, the first flat region 53 may include a portion whose dimension E1 increases upwardly from the first center line L1, and the second flat region 54 may include a portion whose dimension E2 increases downwardly from the first center line L1.

[0211] exist Figure 17 In the example shown, the second side etching step is performed so that the first flat region 53 and the second flat region 54 are discontinuous. For example, the time for the second side etching step can be increased compared to the above embodiment. The size of the second side resist layer 62 in the first direction D1 can be reduced compared to the above embodiment.

[0212] exist Figure 17 Even in the illustrated vapor deposition mask 20 having the flat region 52, the vapor deposition material 98, which has a velocity component in the first direction D1 and moves in a direction oblique to the normal direction of the metal plate 51, can be prevented from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. This prevents the formation of shadows around the first contour 42a of the through-hole 25. By increasing the dimensions E1 and E2 at locations farther from the first centerline L1, the area of ​​the flat region 52 can be increased compared to a case where the dimensions E1 and E2 are fixed independently of position. This improves the strength of the vapor deposition mask 20, thereby preventing damage to the vapor deposition mask 20 during transportation, etc.

[0213] Figure 18 51b is a top view showing an example of the effective area 22 of the vapor deposition mask 20 as viewed from the second surface 51b side. In the above embodiment, an example in which there is no flat area 52 between two through holes 25 adjacent in the second direction D2 is shown. However, this is not limited to this. Figure 18As shown, the vapor deposition mask 20 may also include a third flat region 55 located between two adjacent through-holes 25 in the second direction D2. That is, the two adjacent through-holes 25 in the second direction D2 may not be connected. The vapor deposition mask 20 may also include a fourth flat region 56 located between two adjacent through-holes 25 in the fourth direction D4.

[0214] exist Figure 18 In the illustrated example, similarly to the above embodiment, the first flat region 53 may include a portion whose dimension E1 increases upwardly from the first center line L1, and the second flat region 54 may include a portion whose dimension E2 increases downwardly from the first center line L1.

[0215] like Figure 18 As shown, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. Alternatively, although not shown, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3.

[0216] Figure 19 yes Figure 18 An example of a cross-sectional view of the vapor deposition mask 20 along line DD. Figure 20 It shows Figure 18 FIG2 is a top view of the flat region 52. The third flat region 55 may extend in the second direction D2 so as to connect the first flat region 53 and the second flat region 54 that are adjacent in the second direction D2. Similarly, the fourth flat region 56 may extend in the fourth direction D4 so as to connect the first flat region 53 and the second flat region 54 that are adjacent in the fourth direction D4.

[0217] Figure 20 In the figure, symbol R1 represents the dimension of the portion of the third flat region 55 that overlaps with the second center line L2 in the second direction D2. The second center line L2 is a straight line passing through the center point C1 of two adjacent through-holes 25 in the second direction D2. Dimension R1 of the third flat region 55 can be smaller than dimension P1 of the first flat region 53. This prevents the vapor deposition material 98, which has a velocity component in the second direction D2 and moves in a direction oblique to the normal direction of the metal plate 51, from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This prevents the formation of shadows around the second contour 42b of the through-hole 25.

[0218] The ratio of the dimension R1 to the dimension P1 may be, for example, 0.01 or more, 0.10 or more, 0.30 or more, or 0.45 or more. R1 / P1 may be, for example, 0.60 or less, 0.70 or less, 0.80 or less, or 0.90 or less. The range of R1 / P1 may also be determined by the first group consisting of 0.01, 0.10, 0.30, and 0.45 and / or the second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of R1 / P1 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R1 / P1 may also be determined by a combination of any two of the values ​​included in the first group. The range of R1 / P1 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, 0.01 or more and 0.60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.90 or more. It can be 0.30 or more and 0.80 or less, it can be 0.30 or more and 0.70 or less, it can be 0.30 or more and 0.60 or less, it can be 0.30 or more and 0.45 or less, it can be 0.45 or more and 0.90 or less, it can be 0.45 or more and 0.80 or less, it can be 0.45 or more and 0.70 or less, it can be 0.45 or more and 0.60 or less, it can be 0.60 or more and 0.90 or less, it can be 0.60 or more and 0.80 or less, it can be 0.60 or more and 0.70 or less, it can be 0.70 or more and 0.90 or less, it can be 0.70 or more and 0.80 or less, it can be 0.80 or more and 0.90 or less.

[0219] Figure 20 In the figure, symbol R2 represents the dimension of the portion of the fourth flat region 56 that overlaps with the fourth center line L4 in the fourth direction D4. The fourth center line L4 is a straight line passing through the center points C1 of two adjacent through-holes 25 in the fourth direction D4. Dimension R2 of the fourth flat region 56 can be smaller than dimension P1 of the first flat region 53. This prevents the vapor deposition material 98, which has a velocity component in the fourth direction D4 and moves in a direction oblique to the normal direction of the metal plate 51, from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This also prevents the formation of shadows around the second contour 42b of the through-hole 25.

[0220] The numerical range of the ratio of the dimension R2 to the dimension P1 is the same as the numerical range of the ratio of the dimension R1 to the dimension P1, and therefore description thereof is omitted.

[0221] exist Figure 18 Even in the illustrated vapor deposition mask 20 having the flat region 52, the vapor deposition material 98, which has a velocity component in the first direction D1 and moves in a direction oblique to the normal direction of the metal plate 51, can be prevented from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. Consequently, the formation of shadows around the first contour 42a of the through-hole 25 can be suppressed. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at locations farther from the first centerline L1, the area of ​​the flat region 52 can be increased compared to a case where the dimensions E1 and E2 are fixed regardless of position. This improves the strength of the vapor deposition mask 20, thereby preventing damage to the vapor deposition mask 20 during transportation, etc.

[0222] Because the dimension R1 of the third flat region 55 is smaller than the dimension P1 of the first flat region 53, the vapor deposition material 98, which has a velocity component in the second direction D2 and moves in a direction oblique to the normal direction of the metal plate 51, can be prevented from adhering to the third flat region 55 or the second wall surface 36 of the second recess 35. This prevents the formation of shadows around the first outline 42a of the through-hole 25. Consequently, the formation of shadows around the second outline 42b of the through-hole 25 can be prevented.

[0223] In the above embodiment, an example is shown in which the first surface 51a of the metal plate 51 is processed by performing a first surface etching process. However, the first surface processing process for processing the first surface 51a is not limited to the first surface etching process. For example, the first surface 51a side can also be processed by irradiating the metal plate 51 with a laser. In this case, as described below, laser processing can also be performed instead of the first surface etching process.

[0224] First, if Figure 21 As shown in FIG. 5 , a second surface resist layer 62 is formed on the second surface 51b of the metal plate 51, and the second surface resist layer 62 is patterned. Figure 22 As shown, the second side etching step is performed: the area of ​​the second side 51b of the metal plate 51 not covered by the second side resist layer 62 is etched to form the second recess 35 on the second side 51b. Figure 23 As shown, a laser processing step is performed to irradiate a portion of the portion of the metal plate 51 where the second recess 35 is formed with a laser beam L. By the laser processing step, the first recess 30 is formed which penetrates from the second wall surface 36 of the second recess 35 to the first surface 51a. Figure 23As shown, the laser light L may be irradiated from the second surface 51 b side of the metal plate 51 .

[0225] exist Figures 21 to 23 In the example shown, by forming the above-mentioned flat region 52 on the second surface 51 b side of the vapor deposition mask 20 , it is possible to suppress the generation of shadows around the through-holes 25 .

[0226] like Figure 23 As shown, the wall surface 31 of the first recess 30 formed by laser processing can be inclined so as to shift toward the center point of the through-hole 25 in a plan view as it moves from the second surface 51b side to the first surface 51a side. In this case, the end of the first recess 30 on the first surface 51a can be defined as a through-hole region 42 where the opening area of ​​the through-hole 25 is minimized in a plan view.

[0227] Example

[0228] Next, the embodiments of the present invention will be described in more detail with reference to Examples. However, the embodiments of the present invention are not limited to the description of the following Examples unless departing from the gist of the present invention.

[0229] (Example 1)

[0230] Production includes Figure 9 The evaporation mask 20 is shown with a flat region 52. The dimensions of each part of the evaporation mask 20 are as follows.

[0231] · Size S1 of the through region 42 in the first direction D1: 30 μm

[0232] Thickness T2 of the flat region 52: 25 μm

[0233] · Size P1 of the first flat area 53 overlapping the first center line L1: 2.0 μm

[0234] Distance P2 between the ends Pa and Pb of the first flat region 53: 19 μm

[0235] Dimension Q1 of the flat region 52 overlapping the third center line L3: 30 μm

[0236] Distance Q2 between the ends Qa and Qb of the flat region 52: 35 μm

[0237] In the flat region 52 of Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.11. The dimension Q1 is smaller than the distance Q2, and Q1 / Q2 is 0.86.

[0238] Then, if Figure 4 As shown, the vapor deposition mask 20 is fixed to the frame 15. Specifically, the end portions 17a and 17b are welded to the frame 15 while tension is applied to the vapor deposition mask 20 in the longitudinal direction.

[0239] The vapor deposition mask 20 welded to the frame 15 was observed using a magnifying glass. No damage or deformation occurred in the vapor deposition mask 20. Specifically, it was confirmed that no cracks or bends occurred in the vapor deposition mask 20.

[0240] Next, a vapor deposition process was performed: using a vapor deposition mask 20, a vapor deposition material 98 was deposited onto a substrate 110 to form a vapor deposition layer. Tris(8-hydroxyquinolinate)aluminum, an organic light-emitting material, was used as the vapor deposition material 98. A glass substrate was used as the substrate 110. The vapor deposition process conditions were set so that the thickness of the vapor deposition layer would be 40 nm.

[0241] Next, the deposited layer on substrate 110 was observed using a LEICA DMRX HX DC300F optical microscope and a Hitachi High-Technologies VertScan scanning white interference microscope. Based on the observation results, the area ratio V of the deposited layer was calculated. The area ratio V of the deposited layer is the ratio of the effective area V2 of the deposited layer to the area V1 of the through-hole region 42. Specifically, V = V2 / V1. The effective area V2 is the area of ​​the deposited layer having a thickness of at least 95% of the target thickness. If the target thickness is 40 nm, the effective area V2 is the area of ​​the deposited layer having a thickness of at least 38 nm.

[0242] The area ratio V was calculated for each of the 30 vapor-deposited layers on the substrate 110. The area ratio V was 0.70 or greater in all the vapor-deposited layers.

[0243] The configuration and evaluation results of the vapor deposition mask 20 in Example 1 are shown in FIG. Figure 24 .

[0244] In the "Strength" column of the evaluation results, "OK" means that the vapor deposition mask 20 welded to the frame 15 has no cracks or bends. "NG" means that the vapor deposition mask 20 welded to the frame 15 or the vapor deposition mask 20 before welding to the frame 15 has cracks or bends.

[0245] In the "shaded" column of the evaluation results, "OK" means that the area ratio V of all 30 vapor-deposited layers on the substrate 110 is 0.70 or greater. "NG" means that there is a vapor-deposited layer with an insufficient area ratio V.

[0246] (Example 2~Example 6)

[0247] Production includes Figure 9 The dimensions of each part of the vapor deposition mask 20 of Examples 2 to 6 are shown in FIG. Figure 24In the flat regions 52 of Examples 2 to 6, as in Example 1, dimension P1 is smaller than distance P2. In the flat regions 52 of Examples 2 to 6, P1 / P2 is equal to or less than 0.90. In the flat regions 52 of Examples 2 to 6, as in Example 1, dimension Q1 is smaller than distance Q2.

[0248] Next, similarly to the case of Example 1, the vapor deposition masks 20 of Examples 2 to 6 were fixed to the frame 15. In the vapor deposition masks 20 welded to the frame 15, no cracks or bends occurred.

[0249] Next, the deposition material 98 was deposited onto the substrate 110 to form deposition layers using the deposition masks 20 of Examples 2 to 6, similarly to Example 1. In all 30 deposition layers on the substrate 110, the area ratio V was 0.70 or greater.

[0250] (Example 7)

[0251] Production includes Figure 16 The dimensions of each part of the vapor deposition mask 20 of Example 7 are shown in FIG. Figure 24 In the flat region 52 of Example 7, as in Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.42. In the flat region 52 of Example 7, the dimension Q1 is equal to the distance Q2, and therefore Q1 / Q2 is 1.00.

[0252] Next, the vapor deposition mask 20 of Example 7 was fixed to the frame 15 in the same manner as in Example 1. In the vapor deposition mask 20 welded to the frame 15, no cracks or bends occurred.

[0253] Next, the vapor deposition material 98 was deposited onto the substrate 110 to form vapor deposition layers using the vapor deposition mask 20 of Example 7 in the same manner as in Example 1. In all 30 vapor deposition layers on the substrate 110, the area ratio V was 0.70 or greater.

[0254] (Example 8~Example 10)

[0255] Production includes Figure 20 The dimensions of each part of the vapor deposition mask 20 of Examples 8 to 10 are shown in FIG. Figure 24 In the flat region 52 of Examples 8 to 10, the dimension R1 is smaller than the dimension P1, and R1 / P1 is equal to or less than 0.90.

[0256] Next, the vapor deposition masks 20 of Examples 8 to 10 were fixed to the frame 15 in the same manner as in Example 1. In the vapor deposition masks 20 welded to the frame 15, no cracks or bends occurred.

[0257] Next, the deposition material 98 was deposited onto the substrate 110 to form deposition layers using the deposition masks 20 of Examples 8 to 10, similarly to Example 1. In all 30 deposition layers on the substrate 110, the area ratio V was 0.70 or greater.

[0258] (Example 11~Example 12)

[0259] Production includes Figure 9 The dimensions of each part of the vapor deposition mask 20 of Examples 11 and 12 are shown in FIG. Figure 24 In the flat regions 52 of Examples 11 and 12, the dimension P1 and the distance P2 were equal, and therefore P1 / P2 was 1.00. Visual inspection of the vapor deposition mask 20 of Example 12 revealed that cracks and bends were present in a portion of the vapor deposition mask 20 .

[0260] Next, the vapor deposition mask 20 of Example 11 was fixed to the frame 15 in the same manner as in Example 1. In the vapor deposition mask 20 welded to the frame 15, no cracks or bends occurred.

[0261] Next, the deposition material 98 was deposited onto the substrate 110 to form a deposition layer using the deposition mask 20 of Example 11, similarly to Example 1. In some of the 30 deposition layers on the substrate 110, the area ratio V was less than 0.70.

[0262] Regarding the vapor deposition mask 20 of Example 12, the evaluation of shadows was not performed.

[0263] (Example 13~Example 14)

[0264] Production includes Figure 20 The dimensions of each part of the vapor deposition mask 20 of Examples 13 and 14 are shown in FIG. Figure 24 In the flat regions 52 of Examples 13 and 14, the dimension P1 was equal to the dimension R1, and therefore R1 / P1 was 1.00. Visual inspection of the vapor deposition mask 20 of Example 13 revealed that cracks and bends were present in a portion of the vapor deposition mask 20 .

[0265] Next, the vapor deposition mask 20 of Example 14 was fixed to the frame 15 in the same manner as in Example 1. In the vapor deposition mask 20 welded to the frame 15, no cracks or bends occurred.

[0266] Next, the deposition material 98 was deposited onto the substrate 110 to form a deposition layer using the deposition mask 20 of Example 14, similarly to Example 1. In some of the 30 deposition layers on the substrate 110, the area ratio V was less than 0.70.

[0267] Regarding the vapor deposition mask 20 of Example 13, the evaluation of shadows was not performed.

Claims

1. A vapor deposition mask comprising two or more through holes, wherein: The evaporation mask has: a metal plate comprising a first surface and a second surface located on an opposite side of the first surface; the through hole penetrating from the first surface side to the second surface side of the metal plate; and a flat region located between two adjacent through holes when the vapor deposition mask is viewed from the second surface side; The through holes are arranged alternately in the first direction and the second direction when viewed from above. The distance in the first direction between the center points of two of the through holes adjacent in the second direction is 1 / 2 of the first center-to-center distance between the center points of two of the through holes adjacent in the first direction. The flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line. The first center line passes through the center points of two adjacent through holes in the first direction. The first flat region includes a portion in which a size of the first flat region in the first direction increases as the size increases away from the first center line. The second flat region includes a portion in which a size of the second flat region in the first direction increases as the area moves away from the first center line. The first flat region is continuous with the second flat region. When the vapor deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction are connected.

2. The evaporation mask according to claim 1, wherein A dimension of a portion of the first flat region overlapping the first center line in the first direction is not more than 0.90 times a distance in the first direction between ends of a pair of contours of the first flat region facing the through hole in the first direction.

3. The vapor deposition mask according to claim 1 or 2, wherein: The dimension of the portion of the flat region overlapping the third center line in the third direction is not more than 1.00 times the distance in the third direction between the ends of a pair of contours of the flat region facing the through hole in the third direction. The third direction is orthogonal to the first direction, The third center line passes through a midpoint between two of the through holes adjacent to each other in the first direction and extends in the third direction.

4. The vapor deposition mask according to claim 1 or 2, wherein: The through hole includes: a first recess including a first wall surface located on the first surface side; and a second recess including a second wall surface located on the second surface side and connected to the first recess. The second wall surface includes a portion that is displaced toward the center point of the through hole as it moves from the second surface side toward the first surface side.

5. The vapor deposition mask according to claim 1 or 2, wherein: When observed from the second surface side using a laser microscope, the flat region exhibits a pixel value equal to or greater than a reference value.

6. The vapor deposition mask according to claim 1 or 2, wherein: The thickness of the flat area is the same as the thickness of the metal plate.

7. The vapor deposition mask according to claim 1 or 2, wherein: The thickness of the metal plate is 50 μm or less.

8. A method for manufacturing a vapor deposition mask, comprising: The manufacturing method has the following features: a first surface processing step of forming a first recess including a first wall surface on the first surface of the metal plate; and The second surface etching step is to etch the area of ​​the second surface of the metal plate located on the opposite side of the first surface that is not covered by the second surface resist layer using an etching solution to form a second recessed portion including a second wall surface on the second surface. The through hole has the first recess and a second recess connected to the first recess, The second surface etching step is performed so that a flat area remains between two adjacent through holes when the vapor deposition mask is viewed from the second surface side. The through holes are arranged alternately in the first direction and the second direction when viewed from above. The distance in the first direction between the center points of two of the through holes adjacent in the second direction is 1 / 2 of the first center-to-center distance between the center points of two of the through holes adjacent in the first direction. The flat region includes a first flat region located on one side of a first center line between two of the through holes adjacent in the first direction and a second flat region located on the other side of the first center line. The first center line passes through the center points of two adjacent through holes in the first direction. The first flat region includes a portion in which a size of the first flat region in the first direction increases as the size increases away from the first center line. The second flat region includes a portion in which a size of the second flat region in the first direction increases as the area moves away from the first center line. The second surface etching step is performed so that the first flat region and the second flat region are continuous. The second-surface etching step is performed so that two of the through-holes adjacent to each other in the second direction are connected when the vapor deposition mask is viewed from the second-surface side.

9. The method for manufacturing a vapor deposition mask according to claim 8, wherein: The second surface resist layer includes a first region corresponding to the first flat region and a second region corresponding to the second flat region. The first region includes a portion in which the size of the first region in the first direction increases as the distance from the first center line increases. The second region includes a portion in which a size of the second region in the first direction increases as it moves away from the first center line.

10. The method for manufacturing a vapor deposition mask according to claim 8, wherein: When observed from the second surface side using a laser microscope, the flat region exhibits a pixel value equal to or greater than a reference value.

11. The method for manufacturing a vapor deposition mask according to any one of claims 8 to 10, wherein: The thickness of the metal plate is 50 μm or less.

Images