Tungsten silicide target and method for producing same

CN120666298APending Publication Date: 2025-09-19JX NIPPON MINING & METALS CORP
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Patent Information

Application Number
CN202510899225.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2017-03-24
Filing Date
2018-01-22
Publication Date
2025-09-19

AI Technical Summary

Technical Problem

Existing tungsten silicide targets are prone to generating particles during the sputtering process, making it difficult to achieve both fine grinding and low oxidation, resulting in insufficient homogenization and density of the target.

Method used

By controlling the oxygen concentration of the tungsten silicide target within the range of 500-2000 mass ppm, limiting the number of low-density semi-sintered parts, and controlling the maximum particle size of silicon particles below 20μm, a hot pressing sintering process in a vacuum or inert gas environment is adopted to form a dense target material structure.

Benefits of technology

It significantly reduces the particle generation during sputtering, improves the density and uniformity of the target material, reduces the oxygen content, and enhances the stability of the target material and the quality of the sputtered film.

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Abstract

Provided is a tungsten silicide target capable of suppressing the generation of particles during sputtering by a method different from conventional methods. A tungsten silicide target in which the number of low-density semi-sintered portions having a size of 50 [mu] m or more on the sputtering surface is 5 or less per 80000 mm2.
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Citation Information

Patent Citations

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    JP1992191366A

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