Ejector pin heating device, epitaxial equipment and ejector pin heating method

Abstract

The invention relates to the technical field of semiconductors, and provides an ejector pin heating device, epitaxial equipment and an ejector pin heating method.The ejector pin heating device comprises a laser generation unit and a reflection unit; the laser generation unit is used for generating an incident laser beam and emitting the incident laser beam to the reflection unit; the reflecting unit comprises a reflecting surface, and the reflecting surface is used for reflecting the incident laser beam to form a reflected laser beam and enabling the reflected laser beam to irradiate an ejector pin; the reflection unit is movably arranged so as to adjust the angle of the reflected laser beam and enable the reflected laser beam to move along with the ejector pin. The ejector pin heating device is used for additionally heating the ejector pin, so that the temperature of the ejector pin and the temperature of the bearing seat tend to be consistent, and the temperature difference between the ejector pin and the bearing seat is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a thimble heating device, epitaxial equipment and a thimble heating method. Background Art

[0002] Epitaxial growth equipment is used to grow one or more thin films on epitaxial wafers, improving the electrical and optical properties of the material to meet specific application requirements. Therefore, epitaxial growth equipment plays a key role in semiconductor manufacturing.

[0003] Epitaxial growth equipment typically includes a support base and ejectors. The upper surface of the support base is the support surface, which is used to place epitaxial wafers for epitaxial growth processing. The ejectors are arranged to rise and fall through the support base to transport epitaxial wafers. For example, the ejectors are raised to receive the epitaxial wafers transferred to the epitaxial equipment for processing, and then lowered to place the epitaxial wafers on the support surface. Alternatively, the ejectors are raised to lift the epitaxial wafers after epitaxial growth processing for transfer to an external transport structure.

[0004] In epitaxial equipment, the control of its internal temperature is crucial to the uniformity of thin film growth during the epitaxial process. In epitaxial equipment, the material difference between the support base and the lifting pins results in different thermal conductivity, which makes the temperature rise and fall speed of the support base different from that of the pins, resulting in a temperature difference between the two. This difference is particularly obvious during the frequent lifting and lowering of the pins. When the pins lift the epitaxial wafer or place the epitaxial wafer on the supporting surface, the above difference will affect the temperature distribution of the epitaxial wafer itself, thereby affecting the epitaxial quality and the life of the epitaxial wafer.

[0005] Based on this, a thimble heating device, an epitaxial device and a thimble heating method are needed, wherein the thimble heating device is used to additionally heat the thimble to ensure that the temperature of the thimble is consistent with the temperature of the carrier. Summary of the Invention

[0006] The present invention provides an ejector pin heating device, an epitaxial device and an ejector pin heating method. The ejector pin heating device is used to additionally heat the ejector pin to ensure that the temperature of the ejector pin is consistent with the temperature of the carrier, thereby ensuring that the temperature field of the epitaxial wafer is uniformly distributed.

[0007] The present invention provides a thimble heating device, comprising: a laser generating unit and a reflecting unit;

[0008] The laser generating unit is used to generate an incident laser beam and emit it toward the reflecting unit;

[0009] The reflecting unit includes a reflecting surface, and the reflecting surface is used to reflect the incident laser beam to form a reflected laser beam, and the reflected laser beam is irradiated to the ejector pin;

[0010] The reflecting unit is movably arranged to adjust the angle of the reflected laser beam and enable the reflected laser beam to follow the movement of the ejector pin.

[0011] Optionally, the reflection unit is rotatably arranged around a first axis and a second axis, and the first axis and the second axis are arranged at an angle.

[0012] Optionally, the reflecting unit includes a reflector, a first rotating shaft and a second rotating shaft, the reflecting surface is located on the reflector, the first rotating shaft is set on the reflector, the second rotating shaft is set on the first rotating shaft, the central axis of the first rotating shaft serves as the first axis, and the central axis of the second rotating shaft serves as the second axis.

[0013] Optionally, the reflection unit further includes a first gear and a second gear, the first gear is arranged on the first rotating shaft, and the second gear is arranged on the second rotating shaft.

[0014] Optionally, the reflection unit includes a plurality of reflection surfaces, each reflection surface is centrally symmetrically arranged around the first axis, and the angle between adjacent reflection surfaces is equal to the central angle between adjacent ejector pins.

[0015] Optionally, the first axis is perpendicular to the second axis.

[0016] Optionally, adjacent reflecting surfaces intersect.

[0017] Optionally, the ejector pin heating device further includes a detection unit, which is used to detect the relative position of the light spot of the reflected laser beam and the ejector pin to be heated, and adjust the posture of the reflection unit based on the relative position so that the light spot of the reflected laser beam is aligned with the ejector pin.

[0018] Optionally, the detection unit is used to detect temperature information of the ejector pin and the carrier, and adjust the power of the laser generating unit based on the temperature information so that the temperature of the ejector pin approaches the temperature of the carrier.

[0019] The present invention also provides an epitaxial device, comprising an ejector pin and the ejector pin heating device described above;

[0020] The ejector pin is arranged to rotate around the central axis of the supporting seat, and the reflected laser beam moves along with the ejector pin.

[0021] Optionally, the epitaxial device further comprises a heat reflection unit and a shell, the laser generating unit is arranged outside the shell, and the reflection unit and the ejector pin are arranged inside the shell;

[0022] The heat reflection unit is located between the ejector pin and the reflection unit. The heat reflection unit is provided with a first through hole for the reflected laser beam to pass through. The housing is provided with a second through hole for the incident laser beam generated by the laser generating unit to pass through.

[0023] Optionally, when the ejector pin heating device includes a detection unit, the detection unit is disposed outside the housing, and a third through hole for detection by the detection unit is provided on the housing and the heat reflecting unit.

[0024] The present invention also provides a method for heating an ejector pin, comprising the following steps:

[0025] S1: generating an incident laser beam, wherein the incident laser beam is directed toward a reflective surface of a reflective unit to form a reflected laser beam, and the reflected laser beam is irradiated onto the ejector pin;

[0026] S2: Obtaining the motion trajectory of the ejector pin, driving the reflection unit to move, so as to adjust the angle of the reflected laser beam and make the reflected laser beam follow the motion of the ejector pin.

[0027] Optionally, driving the reflection unit to move includes the following steps:

[0028] The reflection unit is driven to rotate around a first axis and a second axis, wherein the first axis and the second axis are arranged at an angle.

[0029] Optionally, step S1 further includes:

[0030] The relative position between the ejector pin and the light spot of the reflected laser beam is detected; and the posture of the reflecting unit is adjusted based on the relative position so that the light spot of the reflected laser beam is aligned with the ejector pin.

[0031] Optionally, the method further includes the following steps:

[0032] The temperature information of the ejector pin and the supporting base is detected, and the power of the incident laser beam is adjusted based on the temperature information so that the temperature of the ejector pin approaches the temperature of the supporting base.

[0033] In summary, the ejector pin heating device includes: a laser generating unit and a reflecting unit; the laser generating unit is used to generate an incident laser beam and emit it toward the reflecting unit; the reflecting unit includes a reflecting surface, which is used to reflect the incident laser beam to form a reflected laser beam, and make the reflected laser beam irradiate the ejector pin; the reflecting unit is movably arranged to adjust the angle of the reflected laser beam and make the reflected laser beam follow the movement of the ejector pin.

[0034] With this configuration, the ejector pin heating device generates a laser beam from the laser generating unit, which is then reflected onto the reflective surface and onto the position above the ejector pin supporting the epitaxial wafer, ensuring that the temperature at that position is consistent with the temperature of the support base. Furthermore, the reflective unit is movably configured to adjust the reflection angle of the laser beam so that the reflected laser beam follows the movement of the ejector pin, maintaining the laser beam spot at the top of the ejector pin. This ensures that the temperature at the top of the ejector pin remains at a predetermined temperature, thereby aligning the temperature at the top of the ejector pin with the temperature of the support base. This mitigates the problem of poor epitaxial growth quality and shortened epitaxial wafer life caused by the temperature difference between the two.

[0035] The above-mentioned ejector pin heating device uses a laser generating unit in conjunction with a reflecting unit to adjust the spot position of the laser beam, which facilitates the position layout of the laser generating unit and the reflecting unit, making the arrangement of the ejector pin heating device more flexible to adapt to existing epitaxial equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A heating diagram of a pin heating device according to an embodiment of the present invention Figure 1 ;

[0037] Figure 2 A heating diagram of a pin heating device according to an embodiment of the present invention Figure 2 ;

[0038] Figure 3 A schematic diagram of the structure of a pin heating device according to an embodiment of the present invention Figure 1 ;

[0039] Figure 4 A schematic diagram of the structure of a pin heating device according to an embodiment of the present invention Figure 2 ;

[0040] Figure 5 A schematic structural diagram of an epitaxial device according to an embodiment of the present invention;

[0041] Figure 6 Schematic diagram of the structure of a heat reflection unit of an epitaxial device according to an embodiment of the present invention.

[0042] Among them, in the accompanying drawings:

[0043] 10-laser generating unit; 11-polishing surface; 12-through area; 121-inner wall of the through area;

[0044] 20-reflection unit; 201-reflection surface; 21-reflector; 22-first rotating shaft; 23-second rotating shaft; 24-first gear; 25-second gear;

[0045] 30-thimble; 31-thimble rod;

[0046] 40-bearing seat; 41-bearing rod;

[0047] 50-light spot detection unit;

[0048] 60-heat reflecting unit; 61-first through hole; 62-third through hole;

[0049] 70-housing; 71-second through hole;

[0050] 81 - upper cover; 82 - lower cover; 83 - reaction chamber; 84 - heating element. DETAILED DESCRIPTION

[0051] The following is a detailed description of the ejector pin heating device, epitaxial growth equipment, and ejector pin heating method proposed in the present invention, combined with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clarify the purpose of illustrating the embodiments of the present invention.

[0052] In the present invention, "outer diameter" and "inner diameter" for circular structures correspond to the diameter size. For non-circular structures, the inner diameter refers to the diameter of its inscribed circle, and the outer diameter refers to the diameter of its circumscribed circle. "Axial direction" for a cylindrical rod body corresponds to the direction of its axis. For a non-cylindrical rod body, the axial direction corresponds to the length direction of the rod body.

[0053] As used in the present invention, the singular forms "a", "an", and "the" include plural referents. The term "or" is generally used to include "and / or", the term "several" is generally used to include "at least one", and the term "at least two" is generally used to include "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features. In addition, as used in the present invention, "mounted", "connected", "connected", and one element "disposed" on another element should be understood broadly and generally only indicate that there is a connection, coupling, mating, or transmission relationship between the two elements, and the connection, coupling, mating, or transmission between the two elements can be direct or indirect through an intermediate element. It should not be understood to indicate or imply a spatial positional relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below, or to the side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the figures, with the upward or upper direction being toward the top of the corresponding figure and the downward or lower direction being toward the bottom of the corresponding figure.

[0054] Epitaxial growth equipment typically includes a support base and ejectors. The upper surface of the support base is the support surface, which is used to place epitaxial wafers for epitaxial growth processing. The ejectors are arranged to rise and fall through the support base to transport epitaxial wafers. For example, the ejectors are raised to receive the epitaxial wafers transferred to the epitaxial equipment for processing, and then lowered to place the epitaxial wafers on the support surface. Alternatively, the ejectors are raised to lift the epitaxial wafers after epitaxial growth processing for transfer to an external transport structure.

[0055] In epitaxial equipment, the control of its internal temperature is crucial to the uniformity of thin film growth during the epitaxial process. In epitaxial equipment, the material difference between the support base and the lifting pins results in different thermal conductivity, which makes the temperature rise and fall speed of the support base different from that of the pins, resulting in a temperature difference between the two. This difference is particularly obvious during the frequent lifting and lowering of the pins. When the pins lift the epitaxial wafer or place the epitaxial wafer on the supporting surface, the above difference will affect the temperature distribution of the epitaxial wafer itself, thereby affecting the epitaxial quality and the life of the epitaxial wafer.

[0056] This embodiment provides an ejector pin heating device, comprising: a laser generating unit 10 and a reflecting unit 20;

[0057] The laser generating unit 10 is used to generate an incident laser beam and direct it toward the reflective unit 20. The laser generating unit 10 is a device capable of emitting laser light. The laser generating unit 10 can utilize an existing laser, such as a DLS laser. The high-energy-density laser beam emitted by the laser generating unit 10 is used to heat the ejector pin.

[0058] The reflecting unit 20 includes a reflecting surface 201, which is used to reflect the incident laser beam to form a reflected laser beam, so that the reflected laser beam is irradiated onto the ejector pin 30 to achieve heating of the ejector pin 30. In addition, the reflecting unit 20 is movably configured to adjust the angle of the reflected laser beam so that the reflected laser beam follows the movement of the ejector pin 30, ensuring that the reflected laser beam always irradiates the ejector pin 30.

[0059] Please refer to Figure 1 As shown, in this embodiment, three ejector pins 30 are provided. These pins 30 extend through holes in a support base 40 and are arranged to rise and fall. The upper surface of the support base 40 is used to support the epitaxial wafer. During the epitaxial growth process, the support base 40 rotates, and the ejector pins 30 rotate with the support base 40, thereby ensuring that the ejector pins 30 are always aligned with the holes in the support base 40.

[0060] During the epitaxial growth process, the epitaxial wafer is supported on the upper surface of the support base 40, and the ejector pins 30 are lowered below the upper surface of the support base 40, without contacting the epitaxial wafer. During the epitaxial growth process, if there is a temperature difference between the position above the ejector pins 30 supporting the epitaxial wafer and the support base 40, once the ejector pins 30 are raised to contact the epitaxial wafer, heat conduction can easily cause a local temperature difference in the epitaxial wafer, affecting the epitaxial quality and lifespan of the epitaxial wafer. Moreover, due to the different materials of the support base and the lifting ejector pins, resulting in different thermal conductivity coefficients, the effect of the local temperature difference on the epitaxial wafer caused by the ejector pins can persist for a long time.

[0061] like Figure 1 As shown, in this embodiment, the laser beam generated by the laser generating unit 10 is irradiated on the reflecting surface 201 and reflected to the position above the ejector pin 30 supporting the epitaxial wafer, so as to ensure that the temperature of the position above the ejector pin 30 supporting the epitaxial wafer is consistent with the temperature of the carrier 40.

[0062] In addition, combined Figure 2 As shown, when the ejector pin 30 rotates along with the supporting base 40 from position A to position B, the reflecting unit 20 moves, thereby adjusting the reflection angle so that the reflected laser beam follows the ejector pin 30 from position A to position B, and the laser beam spot is always irradiated at the top position of the ejector pin 30, so that the temperature at the top position of the ejector pin 30 is always the predetermined temperature.

[0063] In the aforementioned ejector pin heating device, the laser beam generated by the laser generating unit 10 is irradiated onto the reflective surface 201 and reflected to the position above the ejector pin 30 supporting the epitaxial wafer, thereby ensuring that the temperature at the position above the ejector pin 30 supporting the epitaxial wafer is consistent with the temperature of the support base 40. Furthermore, the reflective unit 20 is movably arranged to adjust the reflection angle of the laser beam so that the reflected laser beam follows the movement of the ejector pin 30. The laser beam spot is always irradiated at the top position of the ejector pin 30, ensuring that the temperature at the top position of the ejector pin 30 is always at a predetermined temperature. This, in turn, allows the temperature at the top position of the ejector pin 30 to converge with the temperature of the support base 40, thereby improving the phenomenon of poor epitaxial quality and shortened epitaxial wafer life caused by the temperature difference between the two.

[0064] The above-mentioned ejector pin heating device uses the laser generating unit 10 to cooperate with the reflecting unit 20 to adjust the spot position of the laser beam, which facilitates the position layout of the laser generating unit 10 and the reflecting unit 20, making the arrangement of the ejector pin heating device more flexible to adapt to existing epitaxial equipment.

[0065] Please continue to refer to Figure 1 As shown, in this embodiment, a support base 40 is provided with three ejector pins 30. Based on this, three sets of ejector pin heating devices can be specifically provided, with each set heating a specific ejector pin. In other alternative embodiments, the number of ejector pin heating devices can be adjusted based on the number of ejector pins, ensuring that the number of ejector pin heating devices matches the number of ejector pins to meet the heating requirements of all ejector pins.

[0066] In this embodiment, the laser beam is irradiated at the top of the ejector pin 30. In other alternative embodiments, the position where the laser beam is irradiated on the ejector pin 30 can be adjusted based on actual needs, for example, the laser beam can be irradiated at a position slightly above the middle of the ejector pin 30.

[0067] Furthermore, the reflecting unit 20 is rotatably arranged around a first axis and a second axis, wherein the first axis is perpendicular to the second axis. The reflecting unit 20 adjusts the angle of the reflected laser beam through two rotational degrees of freedom, thereby allowing the reflected laser beam to follow the movement of the ejector pin 30 .

[0068] Please refer to Figure 3 As shown, in this embodiment, the reflection unit 20 includes a reflector 21 , a first rotation shaft 22 and a second rotation shaft 23 , and the reflection surface 201 is located on the reflector 21 .

[0069] In this embodiment, the overall shape of the reflector 21 is a prismatic structure, and the reflector 21 has multiple reflecting surfaces 201. The first rotating shaft 22 is set on the reflector 21. The first rotating shaft 22 is coaxially arranged with the reflector 21. The central axis of the first rotating shaft 22 serves as the first axis. The reflector 21 can be driven to rotate around the first axis on the first rotating shaft 22.

[0070] The second rotating shaft 23 is disposed on the first rotating shaft 22, and the center axis of the second rotating shaft 23 serves as the second axis. When the second rotating shaft 23 rotates, it drives the first rotating shaft 22 to rotate around the second axis, and drives the reflector 21 to rotate around the second axis.

[0071] Please refer to Figure 4 As shown, a first gear 24 is provided on the first rotating shaft 22, and a second gear 25 is provided on the second rotating shaft 23. The first gear 24 and the second gear 25 can be respectively meshed with the driving gear and respectively controlled to rotate by the stepping motor.

[0072] Therefore, the reflector 21 can rotate around the first axis and the second axis, forming two rotational degrees of freedom. Figure 3 As shown, while ensuring that the incident angle of the incident laser beam a remains unchanged, the reflector 21 is rotated around the first axis and the second axis to adjust the angle of the reflected laser beam b, thereby adjusting the trajectory of the light spot, wherein the trajectory c of the light spot is an arc, which is consistent with the motion trajectory of the ejector pin 30 during rotation, thereby achieving the reflected laser beam b following the movement of the ejector pin 30.

[0073] In alternative embodiments, the reflector 21 may be configured with other degrees of freedom, such as three rotational degrees of freedom or a combination of linear and rotational degrees of freedom. The specific movement of the reflector 21 can be flexibly adjusted based on actual needs, as long as the angle of the reflected laser beam b is adjusted to follow the movement of the ejector pin 30.

[0074] Please continue to refer to Figure 3 As shown, in this embodiment, the reflective unit 20 includes six reflective surfaces 201, and the reflective unit 20 is a hexagonal prism structure. The six reflective surfaces 201 are symmetrically arranged around the first axis, so that the cross-section of the reflective unit 20 is a regular hexagonal structure.

[0075] The reflective unit 20 structured as described above creates an angle of 120° between adjacent reflective surfaces 201. In this embodiment, three ejector pins 30 are provided, symmetrically arranged about the central axis of the support base 40. Therefore, the central angle between adjacent ejector pins 30 is 120°, meaning that the angle between adjacent reflective surfaces 201 is equal to the central angle between adjacent ejector pins 30. As the reflector 21 rotates along the first rotating shaft 22, when the incident laser beam a passes from one reflective surface to the adjacent reflective surface, the 120° angle between the two reflective surfaces causes the reflected laser beam to undergo a 120° sudden change, allowing the reflected laser beam to be quickly positioned from one ejector pin to the next adjacent ejector pin, resulting in rapid heating. During this heating transition, to ensure that the reflected laser beam accurately irradiates the next ejector pin, the second rotating shaft 23 is synchronously reversed and reset. Therefore, during the heating process, the second rotating shaft 23 essentially rotates alternately forward and reverse, and the reflector 21 and first rotating shaft 22 swing back and forth with the second rotating shaft 23.

[0076] The reflection unit 20 of the above structure makes the adjacent reflection surfaces 201 intersect. When the reflection unit 20 rotates with the first rotating shaft 22, when the incident laser beam a is irradiated from one reflection surface to the adjacent reflection surface, the angle of the reflected laser beam can be quickly changed due to the intersection of the two reflection surfaces, so that the reflected laser beam directly points to the position of the next ejector pin when the angle changes, and does not point to a position outside the target position.

[0077] In this embodiment, the first rotating shaft 22 and the second rotating shaft 23 are arranged perpendicularly, so that the first axis and the second axis are perpendicular. In other alternative embodiments, the angle between the first rotating shaft 22 and the second rotating shaft 23 can be adjusted, thereby adjusting the angle between the first axis and the second axis. This only requires ensuring that the reflected laser beam follows the movement of the ejector pin during the rotation of the reflector 21 about the two axes.

[0078] In this embodiment, adjacent reflective surfaces 201 directly intersect with each other. In other alternative embodiments, adjacent reflective surfaces 201 may not directly intersect with each other. For example, adjacent reflective surfaces 201 may be connected by a transition through a dark area (non-reflective area). When the incident laser beam is irradiated on the dark area, the second rotating shaft 23 is simultaneously reversed and reset to ensure that the reflected laser beam does not irradiate non-target areas during the reset process, causing temperature abnormalities.

[0079] In this embodiment, six reflective surfaces 201 are provided, adapted to accommodate three ejector pins 30. In other alternative embodiments, the number of reflective surfaces and the angles between adjacent reflective surfaces can be adaptively adjusted based on the number of ejector pins and the changes in the center angles of adjacent ejector pins, as long as the angles between adjacent reflective surfaces are consistent with the center angles of adjacent ejector pins.

[0080] This embodiment further provides an epitaxial device, including an ejector pin 30 and the ejector pin heating device described above.

[0081] Combine Figure 4 As shown, the ejector pin 30 can be lifted and lowered through the supporting base 40 . The ejector pin 30 can rotate along with the supporting base 40 around the central axis of the supporting base 40 , and the reflected laser beam moves along with the ejector pin 30 .

[0082] In addition, the ejector pin heating device further includes a detection unit 50, which is used to detect the relative position of the light spot of the reflected laser beam and the ejector pin to be heated, and adjust the posture of the reflection unit 20 based on the relative position so that the light spot of the reflected laser beam is aligned with the ejector pin; and / or, the detection unit 50 is used to detect temperature information of the ejector pin 30 and the supporting base 40, and adjust the power of the laser generating unit 10 based on the temperature information so that the temperature of the ejector pin approaches the temperature of the supporting base.

[0083] In this embodiment, detection unit 50 is a thermal imager, which is pointed at the area below support base 40 to form a real-time thermal image of the support base 40, ejector pin 30, and the light spot. This image can then be used to determine the relative position of the light spot and the ejector pin. This image can be used to adjust the position of reflector 21 so that the light spot is directed toward the ejector pin. Using a thermal imager, the thermal field distribution can be detected in real time, determining the temperature of the ejector pin and the support base. Based on this temperature information, the laser power can be adjusted to ensure that the temperature of ejector pin 30 is consistent with that of support base 40.

[0084] The detection unit 50 sends the detected image to the control unit. The control unit uses the image to identify the positions of the light spot and the ejector pin, and determines the distance between the light spot and a designated position on the ejector pin (e.g., the top of the ejector pin). If the distance between the light spot and the ejector pin is within a distance threshold range, the light spot and the ejector pin are deemed to be coincident, meaning the laser beam has irradiated the ejector pin. If the distance between the light spot and the ejector pin is outside the distance threshold range, the light spot and the ejector pin are deemed to be misaligned, meaning the laser beam has not irradiated the ejector pin. The image then identifies the angle of the light spot relative to the designated position on the ejector pin. Based on the distance and angle information, the control unit infers the motion parameters (rotation angle along the first axis and rotation angle along the second axis) required for the reflector 21 to coincide with the light spot. These motion parameters are then sent to the reflector unit 20, which drives the reflector 21 to perform the corresponding motion according to the motion parameters. The aforementioned distance threshold range can be set based on actual needs. For example, the distance between the light spot and the designated position on the ejector pin can be the distance between the center of the light spot and the center of the top of the ejector pin. "Within the distance threshold range" includes the endpoint values, while "outside the distance threshold range" excludes the endpoint values.

[0085] In addition, the detection unit 50 can also collect temperature information, which can be used to identify the temperature of the top of the ejector pin 30 and the temperature of the support base 40. If the temperature difference between the two is within the temperature threshold range, it is determined that the temperature of the ejector pin 30 meets the requirements. If the temperature difference between the two is outside the temperature threshold range, it is determined that the temperature of the ejector pin 30 does not meet the requirements. At this time, based on the temperature difference information between the two, the power of the laser generating unit 10 is adjusted, and then the power of the laser beam is adjusted, so that the temperature of the ejector pin 30 approaches the temperature of the support base 40 and the temperature difference between the two is within the temperature threshold range. The above-mentioned temperature threshold range can be set based on actual needs. For example, if the temperature difference between the two is determined to be within ±0.5°C, the temperatures are considered to be consistent. The above-mentioned "within the temperature threshold range" includes the endpoint value, and "outside the temperature threshold range" does not include the endpoint value.

[0086] The above-mentioned control unit includes at least one processor, which can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0087] The at least one processor can communicate with a plurality of peripheral devices via the bus subsystem. These peripheral devices may include a storage system, a user interface input device, a user interface output device, and a network interface.

[0088] In this embodiment, detection unit 50 utilizes a thermal imager, which can detect the relative position of the light spot and the ejector pin, as well as the temperature distribution, thereby detecting the temperature of the ejector pin and the support base. In alternative embodiments, detection unit 50 may utilize a camera or other type of image acquisition unit, as well as a temperature sensor, to capture real-time images.

[0089] Combine Figure 5 As shown, in this embodiment, the epitaxial device further includes a heat reflection unit 60 and a housing 70. The laser generating unit 10 includes electronic components and is disposed outside the housing 70, as far away as possible from the high-temperature environment within the housing 70. The reflecting unit 20 and the ejector pin 30 are disposed within the housing 70. The reflecting unit 20 is disposed within the housing 70 to facilitate precise control of the reflected laser beam.

[0090] In addition, the epitaxial device also includes an upper cover 81 and a lower cover 82. The upper cover 81 and the lower cover 82 are translucent quartz covers. The upper cover 81 and the lower cover 82 together form a reaction chamber 83. The ejector pin 30 and the supporting seat 40 are built into the reaction chamber 83. The reaction chamber 83 is located in the shell 70. The reaction chamber 83 finally performs the epitaxial process. The ejector pin 30 is set on the ejector pin rod 31. The ejector pin rod 31 passes through the lower cover 82 in a sealed manner and is connected to an external driving device. The ejector pin rod 31 has a hollow structure. One end of the supporting rod 41 supports the supporting seat 40, and the other end axially passes through the ejector pin rod 31 downward to the outside of the reaction chamber 83 and is connected to an external driving device. The above structure is consistent with the structure of the existing epitaxial device and will not be repeated here.

[0091] Combine Figure 5 As shown, the inner wall of the housing 70 is provided with a plurality of heaters 84 (e.g., light bulbs). The heaters 84 are located inside the housing 70 and outside the reaction chamber 83. Each heater 84 is used to irradiate the reaction chamber 83 upward through the quartz lower cover 82 to maintain a high temperature in the reaction chamber 83. The heat reflection unit 60 is a plate-like structure, which is disposed outside the reaction chamber 83 inside the housing 70. The heat reflection unit 60 is located below the reaction chamber 83 and below the heaters 84. The upper surface of the heat reflection unit 60 is used to reflect the heat radiation from the heaters 84 so that the heat radiation is directed toward the reaction chamber 83.

[0092] The heat-reflecting unit 60 is located between the ejector pins 30 and the reflective unit 20, with the ejector pins 30 positioned above the heat-reflecting unit 60 and the reflective unit 20 positioned below. The heat-reflecting unit 60 functions as a thermal insulator, reducing the temperature at the location of the reflective unit 20. Furthermore, the heat-reflecting unit 60 is located within the housing 70 and outside the reaction chamber 83. This protects it from the high-temperature environment of the reaction chamber 83 and the epitaxial gases within the reaction chamber 83, preventing contamination from the epitaxial material and ensuring a good reflective effect.

[0093] The heat reflection unit 60 is provided with a first through hole 61 for the reflected laser beam to pass through; the housing 70 is provided with a second through hole 71 for the incident laser beam generated by the laser generating unit 10 to pass through.

[0094] Please refer to Figure 5 As shown, the laser generating unit 10 is located on the side outside the housing 70, and the second through hole 71 is opened on the side of the housing 70. The laser generating unit 10 can be directly set outside the housing 70, or the housing 70 can be fixed to a fixing bracket and pointed to the second through hole 71.

[0095] Please refer to Figure 4 and Figure 5As shown, the reflective unit 20 is disposed on the inner wall of the housing 70, wherein the second rotating shaft 23 is rotatably disposed on the inner wall of the housing 70 and is driven by a stepping motor disposed on the inner wall of the housing 70. The stepping motor drives a driving gear to rotate, and the driving gear meshes with the second gear 25. The first gear 24 can be in transmission cooperation with the reflector 21. The first gear 24 is rotatably disposed on the first rotating shaft 22. The first rotating shaft 22 is fixedly provided with a stepping motor. The stepping motor drives another driving gear to rotate, and the driving gear meshes with the first gear 24, thereby driving the first gear 24 and the reflector 21 to rotate about the first rotating shaft 22.

[0096] In the aforementioned reflective unit 20, the second rotating shaft 23 is directly disposed on the first rotating shaft 22. In other alternative embodiments, the second rotating shaft 23 may be indirectly disposed on the first rotating shaft 22, for example, the second rotating shaft 23 may be indirectly disposed on the first rotating shaft 22 via a fixed base. The first rotating shaft 22 is mounted on a fixed base, and the second rotating shaft 23 is also mounted on a fixed base. When the second rotating shaft 23 rotates, it can drive the fixed base and the first rotating shaft 22 to rotate synchronously, thereby driving the reflector 21 to rotate. The reflective unit 20 may also be connected to the housing 70 via other connection methods, which will not be described in detail here.

[0097] Please refer to Figure 6 As shown, in this embodiment, three first through holes 61 are provided on the heat reflection unit 60. The first through holes 61 are fan-shaped and are used to allow three groups of incident laser beams to pass through. In other alternative embodiments, an annular light-transmitting area can be provided in the middle of the heat reflection unit 60 to replace the above-mentioned first through holes 61.

[0098] Please refer to Figure 5 and Figure 6 As shown, the housing 70 and the heat reflection unit 60 are provided with a third through hole 62 for detection by the detection unit 50. The detection unit 50 is provided at the bottom of the housing 70, and the third through hole 62 is a circular hole. The size of the third through hole 62 is set based on the imaging requirements of the detection unit 50.

[0099] In other alternative embodiments, the detection unit 50 may be disposed at a position away from the housing 70 and directed toward the third through hole 62 , or the detection unit 50 may be disposed inside the housing 70 .

[0100] In this embodiment, the above-mentioned through holes can be sealed by a transparent member, which can ensure the normal passage of light on the one hand, and form a sealing effect on the other hand to meet the environmental requirements inside the shell.

[0101] The structure of the epitaxial growth apparatus in this embodiment differs from the existing structure in the provision of the ejector pin heating device and the aforementioned local structural improvements related to the ejector pin heating device. The rest of the structure of the epitaxial growth apparatus remains consistent with the existing structure and is not further described here. The epitaxial growth apparatus in this embodiment may, for example, be an atmospheric pressure epitaxial growth apparatus or another type of epitaxial growth apparatus.

[0102] In summary, the ejector pin heating device includes: a laser generating unit and a reflecting unit; the laser generating unit is used to generate an incident laser beam and emit it to the reflecting unit; the reflecting unit includes a reflecting surface, which is used to reflect the incident laser beam to form a reflected laser beam, and make the reflected laser beam irradiate the ejector pin; the reflecting unit is set to move to adjust the angle of the reflected laser beam and make the reflected laser beam follow the movement of the ejector pin.

[0103] So configured, the above-mentioned ejector pin heating device, through the laser generating unit, irradiates the laser beam onto the reflecting surface and reflects it to the position above the ejector pin supporting the epitaxial wafer, so as to ensure that the temperature at the position above the ejector pin supporting the epitaxial wafer is consistent with the temperature of the support base. In addition, the setting of the movement of the reflecting unit can be used to adjust the reflection angle of the laser beam, so that the reflected laser beam follows the movement of the ejector pin, and the laser beam spot is always irradiated at the top position of the ejector pin, so that the temperature at the top position of the ejector pin is always a predetermined temperature, thereby making the temperature at the top position of the ejector pin converge with the temperature of the support base, improving the phenomenon of poor epitaxial quality and shortened epitaxial wafer life caused by the temperature difference between the two. The above-mentioned ejector pin heating device adopts the method of cooperating the laser generating unit with the reflecting unit to adjust the spot position of the laser beam, which facilitates the position layout of the laser generating unit and the reflecting unit, making the arrangement of the ejector pin heating device more flexible to adapt to existing epitaxial equipment.

[0104] In addition, the present invention also provides a method for heating an ejector pin, comprising the following steps:

[0105] S1: generating an incident laser beam, wherein the incident laser beam is directed toward a reflective surface of a reflective unit to form a reflected laser beam, and the reflected laser beam is irradiated onto the ejector pin;

[0106] S2: Obtaining the motion trajectory of the ejector pin. After obtaining the motion trajectory of the ejector pin, the motion trajectory of the reflected laser beam is also determined. At this time, the reflection unit can be driven to move to adjust the angle of the reflected laser beam and make the reflected laser beam follow the motion of the ejector pin.

[0107] Furthermore, driving the reflection unit to move includes the following steps:

[0108] The reflection unit is driven to rotate around a first axis and a second axis, wherein the first axis and the second axis are arranged at an angle.

[0109] Furthermore, step S1 further includes:

[0110] The relative position between the ejector pin and the reflected laser beam spot is detected; based on this relative position, the reflective unit's posture is adjusted so that the reflected laser beam spot is aligned with the ejector pin. This detection step is used for initial alignment of the reflected laser beam. Furthermore, this step can also be used to monitor and align the reflected laser beam in real time as it moves with the ejector pin.

[0111] The above-mentioned detection process can be implemented by the detection unit 50 described above. The detection unit 50 is a thermal imager. The thermal imager is pointed at the area below the support base 40 to form a real-time thermal image including the support base 40, the ejector pin 30, and the light spot, thereby determining the relative position of the light spot and the ejector pin. The detection unit 50 sends the detected image to the control unit. The control unit identifies the position of the light spot and the ejector pin through the image and determines the distance between the light spot and a specified position on the ejector pin (for example, the top position of the ejector pin). If the distance between the light spot and the ejector pin is within a distance threshold range, it is determined that the light spot and the ejector pin are coincident, that is, the laser beam is irradiated on the ejector pin. If the distance between the light spot and the ejector pin is outside the distance threshold range, it is determined that the light spot and the ejector pin are not coincident, that is, the laser beam is not irradiated on the ejector pin. In this case, the angle of the light spot relative to the specified position on the ejector pin is identified through the image. Based on the distance information and the angle information, the motion parameters (rotation angle along the first axis and rotation angle along the second axis) required for the reflector 21 to coincide with the light spot are reversely calculated. The motion parameters are sent to the reflection unit 20, and the reflector 21 is driven to perform the corresponding motion according to the motion parameters.

[0112] Furthermore, after the reflected laser beam is irradiated on the ejector pin, the following steps are further included:

[0113] The temperature information of the ejector pin and the support base is detected, and the power of the incident laser beam is adjusted based on this temperature information to bring the temperature of the ejector pin closer to that of the support base. This detection process can be implemented by the detection unit 50 described above. The detection unit 50 can be used to identify the temperature of the top of the ejector pin 30 and the temperature of the support base 40. If the temperature difference between the two is within a temperature threshold range, the ejector pin 30 temperature is determined to meet the requirements. If the temperature difference between the two is outside the temperature threshold range, the ejector pin 30 temperature is determined to be unsatisfactory. Based on this temperature difference information, the power of the laser generating unit 10 is adjusted, and the power of the laser beam is further adjusted to bring the temperature of the ejector pin 30 closer to that of the support base 40, and to keep the temperature difference between the two within the temperature threshold range.

[0114] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0115] The above description is only a description of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A thimble heating device, characterized in that: include: a laser generating unit and a reflecting unit; The laser generating unit is used to generate an incident laser beam and emit it toward the reflecting unit; The reflecting unit includes a reflecting surface, and the reflecting surface is used to reflect the incident laser beam to form a reflected laser beam, and the reflected laser beam is irradiated to the ejector pin; The reflecting unit is movably arranged to adjust the angle of the reflected laser beam and enable the reflected laser beam to follow the movement of the ejector pin.

2. The ejector pin heating device according to claim 1, wherein: The reflection unit is rotatably arranged around a first axis and a second axis, and the first axis and the second axis are arranged at an angle.

3. The ejector pin heating device according to claim 2, wherein: The reflecting unit includes a reflector, a first rotating shaft and a second rotating shaft. The reflecting surface is located on the reflector. The first rotating shaft is set on the reflector. The second rotating shaft is set on the first rotating shaft. The central axis of the first rotating shaft serves as the first axis, and the central axis of the second rotating shaft serves as the second axis.

4. The ejector pin heating device according to claim 3, wherein: The reflection unit further includes a first gear and a second gear, wherein the first gear is disposed on the first rotating shaft, and the second gear is disposed on the second rotating shaft.

5. The ejector pin heating device according to claim 2, wherein: The reflection unit includes a plurality of reflection surfaces, each of which is centrally symmetrically arranged around the first axis, and an angle between adjacent reflection surfaces is equal to a central angle between adjacent ejector pins.

6. The ejector pin heating device according to claim 2, wherein: The first axis is perpendicular to the second axis.

7. The ejector pin heating device according to claim 5, wherein: Adjacent reflecting surfaces intersect.

8. The ejector pin heating device according to claim 1, wherein: The ejector pin heating device further includes a detection unit configured to detect a relative position between the light spot of the reflected laser beam and the ejector pin to be heated, and adjust a posture of the reflection unit based on the relative position so that the light spot of the reflected laser beam is aligned with the ejector pin.

9. The ejector pin heating device according to claim 1 or 8, characterized in that: The detection unit is used to detect temperature information of the ejector pin and the carrier, and adjust the power of the laser generating unit based on the temperature information so that the temperature of the ejector pin approaches the temperature of the carrier.

10. An epitaxial device, characterized in that: comprising an ejector pin and an ejector pin heating device according to any one of claims 1 to 9; The ejector pin is arranged to rotate around the central axis of the supporting seat, and the reflected laser beam moves along with the ejector pin.

11. The epitaxial device according to claim 10, wherein: The epitaxial device further includes a heat reflection unit and a shell, the laser generating unit is arranged outside the shell, and the reflection unit and the ejector pin are arranged inside the shell; The heat reflection unit is located between the ejector pin and the reflection unit. The heat reflection unit is provided with a first through hole for the reflected laser beam to pass through. The housing is provided with a second through hole for the incident laser beam generated by the laser generating unit to pass through.

12. The epitaxial device according to claim 10, wherein: When the ejector pin heating device includes a detection unit, the detection unit is arranged outside the housing, and a third through hole for detection by the detection unit is provided on the housing and the heat reflecting unit.

13. A method for heating an ejector pin, characterized in that: The following steps are involved: S1: generating an incident laser beam, wherein the incident laser beam is directed toward a reflective surface of a reflective unit to form a reflected laser beam, and the reflected laser beam is irradiated onto the ejector pin; S2: Obtaining the motion trajectory of the ejector pin, driving the reflection unit to move, so as to adjust the angle of the reflected laser beam and make the reflected laser beam follow the motion of the ejector pin.

14. The ejector pin heating method according to claim 13, wherein: Driving the reflection unit to move includes the following steps: The reflection unit is driven to rotate around a first axis and a second axis, wherein the first axis and the second axis are arranged at an angle.

15. The ejector pin heating method according to claim 13, wherein: Step S1 further includes: The relative position between the ejector pin and the light spot of the reflected laser beam is detected; and the posture of the reflecting unit is adjusted based on the relative position so that the light spot of the reflected laser beam is aligned with the ejector pin.

16. The ejector pin heating method according to claim 13, wherein: After the reflected laser beam is irradiated on the ejector pin, the following steps are also included: The temperature information of the ejector pin and the supporting base is detected, and the power of the incident laser beam is adjusted based on the temperature information so that the temperature of the ejector pin approaches the temperature of the supporting base.

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