Method for compensating and reducing doping activation energy of wide bandgap semiconductor material and wide bandgap semiconductor material

Abstract

The invention belongs to the technical field of semiconductors, and provides a method for compensating and reducing doping activation energy of a wide bandgap semiconductor material, which obtains a doping effect by constructing a wide bandgap semiconductor intrinsic material-micro-nano structure and introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nano structure. According to the method, a wide bandgap semiconductor is generally provided with a lower valence band top and a higher conduction band bottom, so that a common doping energy level is difficult to match with the wide bandgap semiconductor, shallow energy level doping is formed, and the activation energy of a dopant is high, and a proper material is introduced as a micro-nano structure to form a heterojunction, so that the doping efficiency is improved. The band edge structure is changed, the local band edge state is introduced, the doping agent activation energy can be compensated by adjusting the relative position of the local band edge state and the doping energy level and utilizing the band order difference between the two materials, the doping efficiency of the wide bandgap semiconductor is improved, and the asymmetry problem of the wide bandgap semiconductor is solved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a method and system for compensating and reducing the doping activation energy of wide-bandgap semiconductor materials. Background Art

[0002] Wide-bandgap semiconductor materials are widely used in optoelectronic devices due to their advantages, including tunable band gaps, wide wavelength coverage, high breakdown field strength, and excellent chemical and thermodynamic stability. For example, III-V nitride materials, with their direct band gaps and wide band gaps, play a vital role in a wide range of fields, including high-efficiency deep-ultraviolet illumination and detection, and high-frequency, high-power electronic devices. Furthermore, progress in superconductors and monolithically integrated optical communication chips based on wide-bandgap semiconductors demonstrates the significant potential for their continued development.

[0003] In practical applications, modulating the conductivity of semiconductor materials through doping to achieve electron (n-type) or hole (p-type) conduction is crucial for complex optoelectronic and microelectronic devices. However, compared to narrow-bandgap semiconductors, wide-bandgap semiconductors have lower (higher) valence band tops (conduction band bottoms), resulting in a serious asymmetric doping problem: efficient doping of only one type can be achieved, but not both simultaneously. For example, p-type doping of h-BN is relatively easy, but n-type doping is extremely difficult. Similarly, n-type doping of Ga2O3 is easy to achieve, but p-type doping presents significant challenges. The main reasons for this problem are: 1. Low solubility of dopants in wide-bandgap semiconductors, resulting in low doping concentrations; 2. Unavoidable defects are generated during the material growth process, and as the doping concentration increases, these point defects self-compensate, reducing the effective doping concentration; 3. Wide-bandgap semiconductors typically have lower (higher) valence band tops (VBMs) and conduction band bottoms (CBMs), resulting in deep dopant energy levels with high activation energies, making them difficult to ionize at operating temperatures and resulting in low carrier concentrations. To address the asymmetric doping problem in wide-bandgap semiconductors, scientists have proposed numerous methods to improve doping efficiency. For example, they exploit the spontaneous polarization effect of the material to tilt the doping energy level, thereby increasing the p-type doping efficiency of AlGaN. Alternatively, they exploit the Coulomb coupling of donor-acceptor pairs to increase dopant solubility, while simultaneously driving defect energy levels closer to the band edge due to Coulomb repulsion. For example, Li-N co-doping has been used to improve the n-type doping efficiency of diamond. δ-doping can increase the local dopant concentration and enhance the mutual coupling between dopants, broadening the doping energy level and thus reducing the activation energy of the dopant. However, these current solutions all suffer from certain localization limitations and limited tuning. For example, the doping efficiency of polarization doping is affected by the magnitude and direction of the polarization electric field and can only be applied to materials with spontaneous or piezoelectric polarization. Co-doping, due to the different wave function characteristics and compatibility of the donor and acceptor energy levels, offers limited reduction in activation energy. δ-doping is significantly limited in its tuning due to the small effective Bohr radius of the dopant and the strong localization of the dopant.

[0004] With the advancement of material growth technology, the low solubility of dopants and the self-compensation problem have been greatly improved. However, the problems of deep doping energy levels and high activation energy are determined by the physical nature of dopants and intrinsic materials and are not easy to overcome. E a) refers to the energy required to excite an electron or hole from the doped energy level to the CBM (n-type) or VBM (p-type) of the intrinsic material. There are two main approaches to reducing the activation energy: one is to adjust the doped energy level closer to the band edge; the other is to increase the VBM of the intrinsic material or reduce the CBM energy of the intrinsic material. Regarding the first approach, the effectiveness of the aforementioned methods such as polarization-induced doping, co-doping, and δ-doping is very limited. Therefore, adjusting the CBM or VBM has great development potential. Summary of the Invention

[0005] In view of this, the present invention aims to provide a method and system for compensating and reducing the doping activation energy of wide bandgap semiconductor materials, utilizing the band gap difference between materials to compensate for the activation energy of dopants in wide bandgap semiconductor materials, improving the dopant ionization efficiency, significantly improving the doping efficiency of wide bandgap semiconductor materials, increasing the carrier concentration, and broadening the application prospects of wide bandgap semiconductor materials.

[0006] To achieve the above object, the technical solution created by the present invention is implemented as follows: One of the purposes of this application is to provide a method for compensating and reducing the activation energy of doping in wide bandgap semiconductor materials, comprising the following steps: Construct wide bandgap semiconductor intrinsic materials-micro-nanostructures; Introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nanostructure; Get the effect of doping; Determine the optimal doping location; Determine the optimal doping temperature.

[0007] In some of the embodiments, the step of constructing a wide bandgap semiconductor intrinsic material-micro-nano structure specifically includes the following steps: first, constructing an orthogonal supercell of a wide bandgap semiconductor intrinsic material; then replacing the middle part of the structure with the material of the micro-nano structure to form a micro-nano structure, and performing sufficient structural optimization.

[0008] In some of the embodiments, the method further comprises calculating the phonon spectrum of the system after the optimization is completed to verify the thermodynamic stability of the structure.

[0009] In some embodiments, the wide bandgap semiconductor intrinsic material may be selected to include wide bandgap semiconductor materials such as Ga2O3, SiC, diamond, or h-BN, and the micro-nano structure may be selected to include quantum structures such as quantum dots, nanowires, or quantum wells.

[0010] In some embodiments, the step of introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nano structure specifically includes the following steps: selecting the optimized structure, selecting five different doping positions from the middle of the quantum dot to the atoms away from the micro-nano structure, replacing them with dopant atoms respectively, and optimizing the structure again, wherein the dopant atoms include n-type dopant atoms or p-type dopant atoms.

[0011] In some embodiments, the step of obtaining the effect of doping specifically includes the following steps: using first principles to calculate the formation energy and activation energy of n-type and p-type dopants at different doping positions.

[0012] In some embodiments, the step of determining the optimal doping position specifically includes the following steps: by calculating the overlap of the encoding wave functions of different dopants at different doping positions, combined with the activation energy of the dopants at different positions, determining the doping position with low activation energy and more overlap between the dopant atoms and the quantum structure band edge wave functions as the optimal doping position.

[0013] In some embodiments, the step of determining the optimal doping temperature specifically includes the following steps: calculating the influence of different growth temperatures on the doping effect when the dopant atoms are located at the optimal doping position, calculating the doping concentration and carrier concentration, and comparing them with the doping effect in the wide bandgap semiconductor intrinsic material without the introduction of micro-nanostructures to determine the optimal doping temperature.

[0014] The second purpose of the present application is to provide a method for preparing a wide bandgap semiconductor material, including preparing the material by the method of compensating and reducing the doping activation energy of the wide bandgap semiconductor material.

[0015] Compared with the prior art, the present invention can achieve the following beneficial effects: The present application provides a method for compensating for and reducing the doping activation energy of wide bandgap semiconductor materials. By constructing a wide bandgap semiconductor intrinsic material-micro-nano structure, dopant atoms are introduced into the wide bandgap semiconductor intrinsic material-micro-nano structure to obtain the doping effect, determine the optimal doping position and determine the optimal doping temperature. Since wide bandgap semiconductors usually have a lower valence band top and a higher conduction band bottom, it is difficult for common doping energy levels to match them, forming shallow energy level doping, resulting in high dopant activation energy. The present application introduces suitable materials as micro-nano structures to form a heterojunction, change the band edge structure, and introduce localized band edge states. By adjusting the relative position of the localized band edge states and the doping energy level, the band step difference between the two materials can be used to compensate for the dopant activation energy, thereby improving the doping efficiency of wide bandgap semiconductors and improving the asymmetry problem of wide bandgap semiconductors.

[0016] Furthermore, the present invention utilizes the band gap difference of the semiconductor heterojunction energy band to compensate for the activation energy of common dopants in wide-bandgap semiconductor materials, achieving efficient n-type or p-type doping of wide-bandgap semiconductors. This micro-nano heterojunction doping method significantly improves the asymmetric doping problem of wide-bandgap semiconductor materials, increases doping efficiency, and facilitates the large-scale application of wide-bandgap semiconductor materials in optoelectronic devices. The present invention offers clear principles, simple processes, significant results, and broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which constitute part of the present invention, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings: Figure 1 This is a flowchart of the steps of the method for compensating and reducing the doping activation energy of wide bandgap semiconductor materials provided in an embodiment of the present application.

[0018] Figure 2 Schematic diagram of three types of band step differences in semiconductor heterojunction energy bands provided in the embodiments of the present application.

[0019] Figure 3 A schematic diagram of the principle of using band gap compensation to reduce the activation energy of wide bandgap semiconductor dopants provided in an embodiment of the present application.

[0020] Figure 4 Schematic diagram of modeling for selecting different doping sites after introducing micro-nanostructures into the wide bandgap semiconductor provided in an embodiment of the present application. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation to the present invention. Similar elements in different embodiments use associated similar element numbers. In the following embodiments, many detailed descriptions are intended to enable the present invention to be better understood. However, those skilled in the art can easily recognize that some of the features can be omitted in different situations, or can be replaced by other elements, materials, or methods. In some cases, some operations related to the present invention are not shown or described in the specification. This is to avoid the core part of the present invention being overwhelmed by too much description. For those skilled in the art, it is not necessary to describe these related operations in detail. They can fully understand the related operations based on the description in the specification and the general technical knowledge in the art.

[0022] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other to form various implementation methods. At the same time, the steps or actions in the method description can also be interchanged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the various orders in the description and the drawings are only for the purpose of clearly describing a certain embodiment and are not intended to be a required order, unless otherwise specified that a certain order must be followed.

[0023] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0024] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art can understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0025] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0026] like Figure 1 As shown, it is a flowchart of the steps of the method for compensating and reducing the doping activation energy of wide bandgap semiconductor materials provided in an embodiment of the present application, including the following steps S110 to S150. The implementation method of each step is described in detail below.

[0027] Step S110: constructing a wide bandgap semiconductor intrinsic material-micro-nano structure.

[0028] In this embodiment, the steps of constructing a wide bandgap semiconductor intrinsic material-micro-nano structure specifically include the following steps: first, using Material Studio software, the original cell of the wide bandgap semiconductor material is expanded to construct an orthogonal supercell of the wide bandgap semiconductor intrinsic material; then, the middle part of the structure is replaced with the material of the micro-nano structure to form a micro-nano structure, and the lattice is fixed to fully optimize the structure of the atomic position.

[0029] Furthermore, in the step of constructing a wide bandgap semiconductor intrinsic material-micro-nano structure, it also includes the step of using phonopy software to calculate the phonon spectrum of the system after the optimization is completed to verify the thermodynamic stability of the structure. If no imaginary frequency appears in the calculated phonon spectrum, it means that the structure is thermodynamically stable.

[0030] In this embodiment, the wide bandgap semiconductor intrinsic material may be selected to include wide bandgap semiconductor materials such as Ga2O3, SiC, diamond, or h-BN, and the micro-nano structure may be selected to include quantum structures such as quantum dots, nanowires, or quantum wells.

[0031] Step S120: introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nano structure.

[0032] In this embodiment, the step of introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nano structure specifically includes the following steps: selecting the optimized structure, selecting five different doping positions from the middle of the quantum dot to the atoms away from the micro-nano structure, replacing them with dopant atoms respectively, and optimizing the structure again, wherein the dopant atoms include n-type dopant atoms or p-type dopant atoms.

[0033] Step S130: obtaining the doping effect.

[0034] In this embodiment, the step of obtaining the doping effect specifically includes the following steps: using first principles to calculate the formation energy and activation energy of common n-type and p-type dopants at different doping positions. The formation energy calculation formula is as follows: (1) in, Indicates point defects X The supercell is in the charged state q The total energy under represents the total energy of the supercell without point defects, The chemical formula of the introduced point defect impurity atom, It represents the chemical formula of the atoms replaced after the point defect is introduced. E F represents the Fermi level, E Vrepresents the valence band top, It is the correction term after aligning the electrostatic potential of the supercell with defects and the supercell without defects. The activation energy is calculated as follows: (2) The VASP calculation outputs the overlap of the band edge wave functions of the entire system to determine whether the micro-nano heterojunction doping method can effectively utilize the band step difference between the wide bandgap semiconductor intrinsic material and the micro-nano material to compensate for the dopant activation energy and improve the doping efficiency.

[0035] Step S140: determining the optimal doping position.

[0036] In this embodiment, the step of determining the optimal doping position specifically includes the following steps: using VASP software to calculate and output the projection of the band edge wave functions of different dopants at different doping positions in real space, observing the overlap of the wave functions of the dopant atoms and the micro-nanostructure atoms in the wave functions, and combining the activation energy of the dopant at different positions to determine that the doping position with low activation energy and more overlap between the dopant atoms and the quantum structure band edge wave functions is the optimal doping position.

[0037] Step S150: determining the optimal doping temperature.

[0038] In this embodiment, the step of determining the optimal doping temperature specifically includes the following steps: q middle X The equilibrium concentration ( ) is its formation energy E form function, their relationship can be expressed as: (3) in: It is a defect X The formation energy, is the number of defects per unit volume, is the degeneracy factor, which indicates the number of possible configurations of electrons occupying the defect layer, and varies with the charge state q changes with the changes of . is the Boltzmann constant, T It's the temperature.

[0039] Donor (acceptor) defects ionize to produce electrons (holes), resulting in charged state defects ( The equilibrium intrinsic carrier concentration can be calculated by the following formula: and (4) in and are the effective state densities at the edges of the valence band and conduction band, respectively. ), carrier concentration, and defect density at different charge states under different chemical potential conditions can be determined by self-consistently solving the charge neutrality condition: (5) Typically, defects are generated during the high-temperature growth of semiconductor materials and then ionized during rapid thermal annealing, generating carriers and defects with different charge states. Therefore, we first solve Equation 5 under high-temperature growth conditions to obtain the different charge states q The Fermi level and density of each defect in the system are obtained. Then, Equation 5 is solved again at a lower operating temperature. At this time, the defect density of different charge states will be redistributed according to the Fermi-Dirac distribution. Thus, the Fermi level at the operating temperature can be obtained, and the redistributed defect density and carrier density can be calculated. By changing the temperature, according to the formation energy and activation energy of different dopants calculated previously, the doping concentration and carrier concentration at different growth temperatures when the dopant atoms are located in the optimal doping position are calculated, and the effect of different growth temperatures on the doping effect is obtained. The doping concentration and carrier concentration in the wide bandgap semiconductor intrinsic material without the introduction of micro-nano structures are further calculated, and the doping effects of the same dopant before and after the introduction of micro-nano structures at different temperatures are compared to determine the optimal doping temperature.

[0040] The above-mentioned embodiments of the present application provide a method for compensating for and reducing the doping activation energy of wide bandgap semiconductor materials. By constructing a wide bandgap semiconductor intrinsic material-micro-nano structure, dopant atoms are introduced into the wide bandgap semiconductor intrinsic material-micro-nano structure to obtain the doping effect, determine the optimal doping position and determine the optimal doping temperature. Since wide bandgap semiconductors usually have a lower valence band top and a higher conduction band bottom, it is difficult for common doping energy levels to match them, forming shallow energy level doping, resulting in high dopant activation energy. The present application introduces suitable materials as micro-nano structures to form a heterojunction, change the band edge structure, and introduce localized band edge states. By adjusting the relative position of the local band edge state and the doping energy level, the band step difference between the two materials can be used to compensate for the dopant activation energy, thereby improving the doping efficiency of wide bandgap semiconductors and improving the asymmetry problem of wide bandgap semiconductors.

[0041] Furthermore, the present invention utilizes the band gap difference of the semiconductor heterojunction energy band to compensate for the activation energy of common dopants in wide-bandgap semiconductor materials, achieving efficient n-type or p-type doping of wide-bandgap semiconductors. This micro-nano heterojunction doping method significantly improves the asymmetric doping problem of wide-bandgap semiconductor materials, increases doping efficiency, and facilitates the large-scale application of wide-bandgap semiconductor materials in optoelectronic devices. The present invention offers clear principles, simple processes, significant results, and broad application prospects.

[0042] The above technical solutions of the present application are described in detail below with reference to specific embodiments.

[0043] Example See also Figure 2 , which is a schematic diagram of three types of band step differences of semiconductor heterojunction energy bands provided in this embodiment.

[0044] In this embodiment, when two wide bandgap semiconductor materials contact to form an interface structure, due to the difference in bandgap width, discontinuous steps will be formed at the CBM and VBM of the materials on both sides, that is, the band step difference. According to the different band alignment conditions, semiconductor heterojunctions are divided into three categories: type-I, type-II and type-III. Figure 1 As shown. This heterojunction structure can change the band edge states of the material. Based on semiconductor heterojunction theory and doping theory, the present invention innovatively proposes a micro-nano heterojunction doping method. Specifically, suitable materials are introduced into the intrinsic material as micro-nano structures, such as quantum dots, nanowires, and quantum wells. This introduces localized band edge states, changes the band edge structure, and compensates for the activation energy of the dopant through the band gap between the two materials. This embodiment is applicable to doping systems formed by introducing micro-nano structures into wide-k bandgap semiconductor materials such as Ga2O3, SiC, and diamond.

[0045] See also Figure 3 , which is a schematic diagram of the principle of using band-step compensation to reduce the activation energy of wide bandgap semiconductor dopants provided in this embodiment, including 1-intrinsic wide bandgap semiconductor intrinsic material, 2-introduction of micro-nanostructure, and 3-dopant atoms.

[0046] In this embodiment, the structures of the micro-nanostructure material and the intrinsic material are similar, and the lattice constants are close. When forming a heterojunction structure, there will be no large lattice mismatch, and the two materials have a type-I band step difference. Therefore, by introducing a micro-nanostructure into the intrinsic wide bandgap semiconductor material, a localized band edge state can be formed, the activation energy of the dopant can be reduced, the asymmetric doping problem of the wide bandgap semiconductor material can be improved, and the doping efficiency can be improved.

[0047] See also Figure 4 , which is a schematic diagram of modeling after introducing micro-nano structures into the wide bandgap semiconductor provided in this embodiment and selecting different doping sites.

[0048] The method for compensating and reducing the doping activation energy of wide bandgap semiconductor materials provided in this embodiment is implemented as follows: 1. Construct a simulation and computational system for wide-bandgap semiconductor intrinsic materials and micro-nanostructures. First, construct an orthogonal supercell of the intrinsic material. Then, replace the central structure with the micro-nanostructure material to form the micro-nanostructure. Perform thorough structural optimization. After optimization, calculate the system's phonon spectrum to verify the structure's thermodynamic stability.

[0049] 2. Introducing dopant atoms: Then select the optimized structure and select five different doping positions from the center of the quantum dot to the atoms away from the micro-nano structure, replace them with dopant atoms respectively, and optimize the structure again.

[0050] 3. Calculate the effects of micro-nano heterojunction doping. Calculate the formation energy, activation energy, and band-edge wave function overlap of common n-type and p-type dopants at different doping locations. Confirm that micro-nano heterojunction doping methods can effectively utilize the band gap difference between the wide-bandgap semiconductor intrinsic material and the micro-nano material to compensate for the dopant activation energy and improve doping efficiency.

[0051] 4. Determine the optimal doping location. By calculating the overlap of the coded wave functions of different dopants at different doping locations and combining them with the activation energies of the dopants at different locations, we can determine the doping location with low activation energy and high overlap between the wave functions of the dopant atoms and the quantum structure band edges.

[0052] 5. Determine the optimal doping temperature. Calculate the effect of different growth temperatures on the doping effect when the dopant atoms are located in the optimal doping position. Calculate the doping concentration and carrier concentration. Compare this to the doping effect in intrinsic wide-bandgap semiconductor materials without micro-nanostructures. Determine the optimal doping position and the improvement of doping efficiency in wide-bandgap semiconductors using micro-nano heterojunction doping methods.

[0053] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved. This is not limited herein.

[0054] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials, characterized by: The steps include: Construct wide bandgap semiconductor intrinsic materials-micro-nanostructures; Introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nanostructure; Get the effect of doping; Determine the optimal doping location; Determine the optimal doping temperature.

2. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 1, characterized in that: The steps of constructing a wide bandgap semiconductor intrinsic material-micro-nano structure specifically include the following steps: first, constructing an orthogonal supercell of a wide bandgap semiconductor intrinsic material; then replacing the middle part of the structure with the material of the micro-nano structure to form a micro-nano structure, and performing structural optimization.

3. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 2, characterized in that: The method also includes a step of calculating the phonon spectrum of the system after the optimization is completed to verify the thermodynamic stability of the structure.

4. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 2, characterized in that: The wide bandgap semiconductor intrinsic material may be selected from wide bandgap semiconductor materials including Ga2O3, SiC, diamond or h-BN, and the micro-nano structure may be selected from quantum structures including quantum dots, nanowires or quantum wells.

5. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 2, characterized in that: The step of introducing dopant atoms into the wide bandgap semiconductor intrinsic material-micro-nano structure specifically includes the following steps: selecting the optimized structure, selecting five different doping positions from the middle of the quantum dot to the atoms away from the micro-nano structure, replacing them with dopant atoms respectively, and optimizing the structure again, wherein the dopant atoms include n-type dopant atoms or p-type dopant atoms.

6. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 5, characterized in that: The step of obtaining the doping effect specifically includes the following steps: using first principles to calculate the formation energy and activation energy of n-type and p-type dopants at different doping positions.

7. The method of compensating and reducing the doping activation energy of a wide bandgap semiconductor material according to claim 1, characterized in that: The step of determining the optimal doping position specifically includes the following steps: by calculating the overlap of the encoding wave functions of different dopants at different doping positions, combined with the activation energy of the dopants at different positions, determining the doping position with low activation energy and more overlap of the dopant atoms and the quantum structure band edge wave functions as the optimal doping position.

8. The method for compensating and reducing the activation energy of doping of wide bandgap semiconductor materials according to claim 1, characterized in that: The step of determining the optimal doping temperature specifically includes the following steps: calculating the influence of different growth temperatures on the doping effect when the dopant atoms are located at the optimal doping position, calculating the doping concentration and carrier concentration, and comparing them with the doping effect in the wide bandgap semiconductor intrinsic material without the introduction of micro-nano structure, to determine the optimal doping temperature.

9. A wide bandgap semiconductor material, characterized in that: The method for compensating and reducing the doping activation energy of wide bandgap semiconductor materials according to any one of claims 1 to 8 is prepared.

Images