Package, method for production thereof, and use of package for high-frequency applications

Abstract

The invention provides a package, a method of manufacturing the same, and use of the package for high frequency applications. The package (100) comprises: a component carrier (102), the component carrier (102) comprising a stack (104), the stack (104) comprising at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108); a multi-component module (110), the multi-component module (110) being at least partially arranged on the stack (104), and / or the multi-component module (110) being at least partially arranged in the stack (104), the multi-component module (110) comprising at least two active portions (112, 114); and an electrically conductive shielding structure (116) configured to at least partially shield the at least two active portions (112, 114) from each other in terms of electromagnetic interference.

Description

Technical Field

[0001] The present invention relates to a package, a method of manufacturing a package, and the use of the package for high-frequency applications. Background Art

[0002] Against the backdrop of the ever-increasing product functionality of component carriers equipped with one or more electronic components, the increasing miniaturization of such electronic components, and the growing number of electronic components to be mounted on component carriers such as printed circuit boards, increasingly powerful array-like components or packages are being adopted, containing multiple electronic components and having multiple contacts or connections with increasingly smaller spacing between them. Removing the heat generated by such electronic components and the component carriers themselves during operation is becoming an increasingly important issue. At the same time, component carriers must be mechanically robust and electrically reliable to enable operation even under harsh conditions. Summary of the Invention

[0003] An object of the present invention is to provide an electrically reliable component-carrying package.

[0004] In order to achieve the above-defined objects, there are provided a package, a method of manufacturing the package, and a use of the package according to various embodiments of the present invention.

[0005] According to an exemplary embodiment, a package is provided, comprising: a component carrier, the component carrier comprising a stack, the stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure; a multi-component module, the multi-component module being at least partially arranged on the stack and / or at least partially arranged in the stack, the multi-component module comprising at least two active parts; and an electrically conductive shielding structure, the shielding structure being configured to at least partially shield the at least two active parts from each other with respect to electromagnetic interference.

[0006] According to another exemplary embodiment of the present invention, a method for manufacturing a package is provided, wherein the method comprises: providing a component carrier, the component carrier comprising a stack, the stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure; arranging a multi-component module at least partially on the stack and / or arranging the multi-component module at least partially in the stack, the multi-component module comprising at least two active parts; and forming an electrically conductive shielding structure, which is configured to at least partially shield the at least two active parts from each other in terms of electromagnetic interference.

[0007] According to another exemplary embodiment of the present invention, the package having the above-mentioned features is used for high-frequency applications, for example, the package is used to process high-frequency signals, in particular, the package is used to process high-frequency signals having a frequency of at least 1 GHz, preferably, the package is used to process high-frequency signals having a frequency in the range of 1 GHz to 50 GHz.

[0008] In the context of the present application, the term "package" may particularly denote a device that provides electronic functionality and consists of a plurality of electrically, mechanically and / or thermally interconnected electronic components, such as component carriers and electronic components or active parts. The package may provide a wiring layer to fan out or fan in electrical connections from a component having inputs and / or outputs for other component connections. In addition, the package may provide a protective carrier for protecting and / or mounting and / or sealing components (such as ICs). The package may include 2D, 2.5D or 3D types of packages for different end applications. The package may also include one or more components embedded in a wafer or PCB or mounted on the surface of a PCB.

[0009] In the context of the present application, the term "component carrier" may in particular denote any supporting structure that is capable of accommodating one or more components on and / or in the component carrier to provide mechanical support and / or electrical connection and / or thermal conduction. In other words, the component carrier may be configured as a mechanical and / or electronic and / or thermal carrier for the components. In particular, the component carrier may be one of the following: a printed circuit board, an organic interposer and an IC (integrated circuit) substrate. For example, the component carrier may be a rigid-flexible carrier or a flexible substrate. The component carrier may also be a hybrid board that combines different types of component carriers of the above-mentioned types. In particular, the component carrier may comprise a stack comprising a plurality of electrically conductive layer structures and / or electrically insulating layer structures.

[0010] In the context of the present application, the term "ply stack" may particularly denote a flat or planar sheet-like body. For example, the ply stack may be a layer stack, and in particular, the ply stack may be a laminated layer stack or a laminate. Such a laminate may be formed by connecting a plurality of layers by applying mechanical pressure and / or heat, preferably, the plurality of layers being arranged in parallel.

[0011] In the context of the present application, the term "layer structure" may particularly denote a continuous layer, a patterned layer or a plurality of non-continuous islands in a common plane.

[0012] In the context of the present application, the term "multi-component module" may particularly denote a single integral physical body having at least two components and / or active parts and / or other constituent parts. A multi-component module may have at least two distinguishable active parts. In particular, a multi-component module may be handled as a single piece during the manufacturing process. For example, a multi-component module may comprise two or more separate components (e.g., semiconductor chips) in an adhesive matrix, a multi-component module may comprise two or more directly connected components (e.g., semiconductor chips glued together), or a multi-component module may comprise two or more integrally connected component parts (e.g., a semiconductor chip with two or more functionally and / or spatially separated active parts).

[0013] In the context of the present application, the term "active part" may particularly denote a functional area of ​​a multi-component module that provides a function, in particular an electronic function. For example, when the multi-component module comprises a semiconductor chip, the active part may be a region of the semiconductor chip in which at least one integrated circuit element (e.g., a transistor or a diode) is monolithically integrated. The multi-component module may comprise a single semiconductor chip having different active parts, or the multi-component module may comprise a plurality of semiconductor chips, each of which has at least one active part.

[0014] In the context of the present application, the term "electrically conductive shielding structure" may particularly denote a physical structure comprising an electrically conductive material (such as a metal, e.g. copper) and being positioned and configured so as to suppress electromagnetic interference that might otherwise cause crosstalk between different active parts of a multi-component module.

[0015] In the context of this application, the term "electromagnetic interference" may particularly refer to interference caused by one of the active parts and / or an external source affecting another of the active parts through electromagnetic induction, electrostatic or electromagnetic coupling, and / or conduction. Such interference may degrade the performance of at least one of the active parts or may even prevent at least one of the active parts from functioning. When referring to radio frequency, electromagnetic interference may also include radio frequency interference (RFI) when it is in the radio frequency spectrum.

[0016] In the context of this application, the term "crosstalk" may refer to the phenomenon of electromagnetic interference caused by the electric or magnetic field of one signal affecting another signal in an adjacent circuit. In essence, electrical signals may have varying electromagnetic fields. Whenever electromagnetic fields overlap, unwanted signals—capacitive coupling, conductive coupling, and / or inductive coupling—may cause electromagnetic interference (EMI), thereby generating crosstalk. Overlap may occur in structured wiring, integrated circuit design, audio electronics, and other connection systems. For example, if there are two wires transmitting different signals in close proximity, their currents may generate a magnetic field that induces a weaker signal in the adjacent wire. Therefore, crosstalk may occur in the following multi-component modules: the multi-component module may include adjacent or parallel pairs of wires that generate magnetic fields that interact and interfere with each other. As electronic systems need to increase bandwidth and reduce size, crosstalk is a major issue in electronic product development. This has led to the close proximity of high-speed circuits and high-bandwidth channels. In addition, the continuous increase in internal clock frequency (e.g., 5 GHz to 10 GHz) and the increase in data rate (e.g., more than 10 Gbps) also exacerbate the occurrence of crosstalk problems. Therefore, an effective electrically conductive shielding structure plays a vital role in electronic component packages, especially in electronic component packages used for HF (high frequency) reference applications.

[0017] In the context of this application, the term "high-frequency application" can particularly refer to electronic functions related to tasks that may involve processing and / or communicating high-frequency or radio-frequency signals. Such radio-frequency or high-frequency signals can be electrical or electromagnetic signals that propagate along the package within a frequency range used for communication or other signals. In particular, radio-frequency (RF) signals can, for example, have a frequency in the range between 3 kHz and 300 GHz, in particular in the range from 1 GHz to 150 GHz. In order to provide high-frequency applications, a multi-component module can be equipped with at least one high-frequency component or active part, which can have integrated functions in high-frequency signal generation and / or high-frequency signal processing and / or high-frequency signal transmission. For example, the high-frequency component can be a semiconductor chip or active part (e.g., RFIC, radio-frequency integrated circuit) configured to operate using high-frequency signals. For example, the high-frequency component or active part can provide front-end functions for performing front-end processing tasks for high-frequency applications, in particular communication applications. Additionally or alternatively, the high-frequency component or active part can be used for impedance matching to ensure impedance matching between the front end and the connecting element. Additionally or alternatively, other functions of the high-frequency component or active part are possible.

[0018] In the context of this application, the term "main surface" of a body may particularly denote one of the body's two largest opposing surfaces or one of the body's outermost opposing surfaces. The main surfaces may be connected by a circumferential sidewall. The thickness of a body, such as a component carrier or a multi-component module, may be defined by the distance between the two opposing main surfaces.

[0019] According to an exemplary embodiment, the package is based on a component carrier (e.g., a printed circuit board or an integrated circuit substrate) having a (preferably, laminated) stack of components. The multi-component module assembled with the stack can have multiple active parts, which can be active to provide functions (e.g., electronic functions). However, since the multi-component module can be handled as a single piece during the manufacture of the package, the manufacturing process can be significantly simplified and traditional problems such as undesirable tilting and / or offset of individual components can be overcome. This can increase yield, improve quality and shorten the manufacturing process. Advantageously, the electrically conductive shielding structure of the package can shield the active parts from each other to suppress, reduce or even eliminate crosstalk generated by electromagnetic interference (EMI) between the active parts. Therefore, due to the suppression of EMI phenomena, the operation of the active parts of the multi-component module, for example, which are relatively close in space, can be performed with high quality, low loss and low distortion. Therefore, an electrically reliable component-carrying package can be provided. Furthermore, such a shielding structure can provide design flexibility for integrated circuit (IC) packages that may experience crosstalk issues with components embedded in and / or mounted on the package. This is due to the fact that this enables the shielding structure to be designed or manufactured with less effort during assembly, rather than changing the design of components or chips or addressing crosstalk issues at the wafer level, which may require more effort.

[0020] In the following, further exemplary embodiments of the package, use and method will be described.

[0021] In an embodiment, at least a portion of the shielding structure is disposed between the at least two active portions. This effectively suppresses crosstalk by shielding the electromagnetic field between two (e.g., adjacent) active portions. Consequently, signal transmission noise can be significantly reduced, while ensuring signal integrity and accuracy.

[0022] In an embodiment, at least a portion of the shielding structure is arranged on the multi-component module. When the shielding structure is arranged directly on the multi-component module, the shielding structure can perform its shielding function for active parts that are spatially closely adjacent, and thus is very effective. In addition, this arrangement can provide greater tolerance for the design of the shielding structure in the case of a multi-component module.

[0023] In an embodiment, the multi-component module comprises at least two separate components, wherein, in particular, each of the at least two separate components is associated with a respective one of the at least two active parts. For example, the separate components may be independent components (e.g., semiconductor chips) that can be connected to each other to form a common single-body multi-component module. Preferably, the independent components can be directly connected to each other (e.g., by gluing) to form a common single-body multi-component module. This can result in a compact design.

[0024] In an embodiment, a multi-component module includes a common inorganic structure for the at least two active parts. In particular, the common inorganic structure is a semiconductor body, into which the at least two active parts are integrated. For example, the active parts can be monolithically integrated in different surface portions of the common inorganic structure. Preferably, the active parts can be monolithically integrated in different surface portions of a common semiconductor substrate. The surface portions can be located adjacent to each other on the same main surface. Consequently, the multi-component module can be manufactured with low space consumption, because the active parts of the multi-component module can be different regions of the same common inorganic structure.

[0025] In the context of the present application, the term "inorganic structure" may particularly denote a body comprising an inorganic material such as an inorganic compound. In particular, the dielectric material of the inorganic structure, or even the entire inorganic structure, may be made exclusively or at least substantially exclusively of an inorganic material. In another embodiment, the inorganic structure may comprise an inorganic dielectric material and also comprise another dielectric material. The inorganic compound may be a compound lacking a carbon-hydrogen bond, or may be a compound that is not an organic compound. In one example, the inorganic structure may comprise glass, for example, the inorganic structure may comprise silicon-based glass, in particular, the inorganic structure may comprise soda-lime glass, and / or borosilicate glass and / or aluminosilicate glass and / or lithium silicate glass and / or alkali-free glass. In another example, the inorganic structure may comprise a ceramic material, for example, the inorganic structure may comprise aluminum nitride and / or aluminum oxide and / or silicon nitride and / or boron nitride and / or tungsten-containing ceramic material. In another example, the inorganic structure may include a semiconductor material, for example, the inorganic structure may include silicon and / or germanium and / or silicon oxide and / or germanium oxide and / or silicon carbide and / or gallium nitride. In another embodiment, the inorganic structure may include (elemental) metals and / or metal alloys, for example, the inorganic structure may include (elemental) copper and / or tin and / or bronze. In another embodiment, the inorganic structure may include inorganic materials not listed in the examples mentioned above, such as: MoS2, CuGaO2, AgAlO2, LiGaTe2, AgInSe2, CuFeS2, BeO.

[0026] In embodiments, the multi-component module is configured as a block structure, particularly as an organic board structure. For example, the block structure may be a printed circuit board or an integrated circuit substrate. Two or more components, each including at least one active part, may be embedded in the block structure. The block structure can then be embedded in a component carrier, thereby forming a board-in-board arrangement with a shielding structure that suppresses crosstalk.

[0027] In an embodiment, at least a portion of the (particularly electrically conductive) shielding structure is arranged in the block structure and / or at least a portion of the (particularly electrically conductive) shielding structure is arranged on the block structure. Thus, the shielding structure may also be partially or fully embedded in the block structure. This further contributes to a compact design of the package and efficient shielding.

[0028] In an embodiment, a multi-component module includes a cluster that includes multiple components, for example, the cluster includes multiple components embedded in the cluster. For example, the multi-component module can be implemented as a group of chiplets combined into a cluster. The chiplets integrated into the cluster can be used for high-performance computing and thus can also solve crosstalk problems in high-performance computing applications. This can bring the advantage of simplifying the manufacturing process of the package and thereby increase the manufacturing speed.

[0029] In one embodiment, the multi-component module includes an encapsulation, for example, comprising an organic material. When the encapsulation is an organic material, the multi-component module can be formed, for example, as a laminated encapsulation component, wherein the active portion is enclosed in an organic material such as epoxy resin and / or prepreg. In another embodiment, the encapsulation can be a molding compound. This can provide the advantage of utilizing all PCB and / or IC substrate manufacturing processes and / or machinery, thereby ensuring high product quality and / or low scrap.

[0030] In an embodiment, the stack comprises a cavity, at least a portion of which accommodates at least a portion of the multi-component module. For example, at least a portion of the multi-component module can be embedded in the stack, in particular, at least a portion of the multi-component module can be embedded in the at least one electrically insulating layer structure. The cavity mentioned can particularly denote an accommodating hole, an opening or a via in the component carrier. Such a cavity can be a through hole extending through a core in a central part of the component carrier, such a cavity can be a blind hole extending into the component carrier but having a closed bottom, or such a cavity can be a groove or recess of any shape. When the multi-component module is embedded in the interior of the stack of component carriers, this can result in a highly compact design of the package, in particular a highly compact design of the package in the vertical direction.

[0031] However, in alternative embodiments, the multi-component module may be surface mounted on top of the stack. The shielding structure may then be arranged on top of the surface mounted multi-component module and / or the shielding structure may be arranged between the surface mounted multi-component module and the stack.

[0032] In an embodiment, at least a portion of the shielding structure is embedded in the stack, in particular, at least a portion of the shielding structure is embedded in the at least one electrically insulating layer structure. This may particularly allow at least a portion of the shielding structure to be manufactured together with at least a portion of the at least one electrically conductive layer structure. For example, at least a portion of the shielding structure and at least a portion of the at least one electrically conductive layer structure may be formed from a common patterned metal layer and / or from common drilled and metal-filled holes. This may make the manufacturing process very efficient.

[0033] In an embodiment, at least a portion of the multi-component module is electrically coupled to the at least one electrically conductive layer structure. For example, when the multi-component module is embedded in a stack, the electrical coupling may allow one or more terminals of the embedded multi-component module to be connected to an outer surface of the package. This, in turn, may allow the embedded multi-component module to be electrically coupled to electronic peripherals of the package, to surface-mounted components on the stack, and the like. For example, the embedded multi-component module may be coupled to a first stack of component carriers or to a second stack of component carriers. This may depend on the design and application. Thus, the shielding structure may be formed in the stack of component carriers and may utilize the manufacturing process of the component carriers and the package and / or the multi-component module manufacturing process. This may reduce the manufacturing workload and / or increase efficiency.

[0034] In an embodiment, the shielding structure is electrically disconnected from the multi-component module (eg short-circuited in this area). This can allow, for example, the shielding structure to be brought to a reference potential, such as ground potential, to provide particularly effective EMI protection.

[0035] In embodiments, the shielding structure is electrically coupled to and / or aligned with at least one conductive region of the multi-component module. For example, the at least one conductive region may include a plurality of sub-regions, for example, the plurality of sub-regions being arranged between the at least two active portions. Preferably, the plurality of sub-regions are electrically disconnected from the at least two active portions. Alignment of the shielding structure, particularly between the at least two active portions, can further enhance EMI protection and thereby ensure low interference between the multiple components.

[0036] In an embodiment, the shielding structure includes a shielding wall. Preferably, the shielding wall can be a continuous wall, and more preferably, the shielding wall can be a continuous electrically conductive wall. For example, such a shielding wall can have a vertical orientation. This can allow the active parts of the multi-component module to be electromagnetically disconnected from each other in a reliable manner. A shielding structure configuration having one or more metallic shielding walls can be most advantageous for effectively suppressing crosstalk.

[0037] In an embodiment, the shielding structure includes a plurality of shielding vias. In this context, a via can be a truncated cone or cylindrical hole that is partially or completely filled with a metal such as copper. Such a via can be mechanically drilled (which can result in a cylindrical hole) or can be laser drilled (which can result in a truncated cone hole). Such a hole can be filled with metal, for example, such a hole can be filled with metal by electroless plating and / or electroplating. The EMI shielding function of such a via can be particularly significant when such a via is arranged between active parts to be shielded relative to each other, and preferably when such a via is connected to a reference potential such as ground.

[0038] In an embodiment, the shielding vias are electrically connected to each other, for example, the shielding vias are electrically connected to each other by an electrically conductive connecting rod. Such a metal rod or bar may extend horizontally, preferably, such a metal rod or bar may extend straight, and such a metal rod or bar may effectively electrically connect an array of shielding vias so that all of the shielding vias reach a common electrical potential at the same time.

[0039] In an embodiment, the shielding vias have a height that is smaller than the distance between corresponding adjacent shielding vias, wherein, for example, the height and / or the distance is less than 50 μm, in particular, the height and / or the distance is in the range of from 5 μm to 40 μm. This can lead to good crosstalk reduction results for many relevant frequencies and package designs. When the shielding vias are close enough together, this can result in effective shielding without the risk of excessive electromagnetic radiation propagating between adjacent vias. The appropriate height and / or distance of the shielding vias can also be adjusted according to the operating frequency of the package.

[0040] In an embodiment, a shielding structure includes a plurality of shielding vias having a maximum characteristic spacing value L, which is defined as the square root of the sum of the square of the height of the shielding via and the square of the distance between corresponding adjacent shielding vias. In such an embodiment, the method may include determining the maximum characteristic spacing value L for a wavelength λ of a high-frequency signal propagating in the package based on the formula SE=20*lg(λ / 2L) to meet a predetermined target value of shielding effectiveness SE. In some designs, the shielding vias may have a maximum characteristic spacing value, which is defined as the square root of the sum of the square of the height of the shielding via and the square of the distance between corresponding adjacent shielding vias, and the maximum characteristic spacing value is in the range of 80μm to 8000μm for a frequency in the range of 1GHz to 100GHz for a high-frequency signal propagating in the package. This design rule can be flexibly adjusted based on the frequency requirements of the final application.

[0041] In one embodiment, the shielding vias have dimensions and / or spacings that differ from the dimensions and / or spacings between the vias of the at least one electrically conductive layer structure. For example, on and / or within the same electrically insulating layer structure, the shielding vias have dimensions and / or spacings that differ from the dimensions and / or spacings between the vias of the at least one electrically conductive layer structure. For example, the shielding vias can be specifically arranged, shaped, and dimensioned to optimize the EMI shielding function of the shielding vias. Correspondingly and independently, the connection vias of the electrically conductive layer structure can be specifically arranged, shaped, and dimensioned to optimize the electrical connection function of the connection vias of the electrically conductive layer structure in the component carrier. This separate optimization may result in different dimensions and / or spacings between the shielding vias compared to the connection vias.

[0042] In an embodiment, the shielding structure circumferentially surrounds at least one of the at least two active parts, in particular, the shielding structure circumferentially surrounds each of the at least two active parts (see e.g. Figure 8 ). This configuration can provide the active part with a shielding function around the entire periphery of the active part. Therefore, this can bring excellent results in terms of EMI protection.

[0043] In an embodiment, the shielding structure and / or the at least one electrically conductive layer structure are configured to electrically couple the shielding structure to a reference potential, for example, the shielding structure and / or the at least one electrically conductive layer structure are configured to electrically couple the shielding structure to ground potential. EMI protection can be particularly strong when the metallic shielding structure is at ground potential or another well-defined constant potential. The shielding structure can also be configured to function in terms of heat dissipation. The shielding structure can at least partially dissipate heat from one or more of the components.

[0044] In one embodiment, the component carrier includes an inorganic core, such as glass. A multi-component module can be embedded within the inorganic core. In this embodiment, the shielding structure can be designed as any of the shielding structures mentioned in this application. Since the components can also be inorganic, CTE mismatch can be much less, significantly reducing the risk of warping, cracking, delamination, etc.

[0045] In an embodiment, the component carrier includes a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the aforementioned one or more electrically insulating layer structures and one or more electrically conductive layer structures, in particular a laminate formed by applying mechanical pressure and / or thermal energy. The aforementioned stack can provide a plate-like component carrier that can provide a large mounting surface for other components while still being very thin and compact.

[0046] In one embodiment, the component carrier is formed as a plate. This facilitates a compact design, while still providing a large base for components mounted on the component carrier. In particular, bare chips (dies), as an example of electronic components, can be surface-mounted on a thin plate, such as a printed circuit board.

[0047] In an embodiment, the component carrier is configured as one of a printed circuit board, a substrate (in particular an IC substrate) and an interposer.

[0048] In the context of the present application, the term "printed circuit board (PCB)" may particularly denote a plate-like component carrier formed by laminating a plurality of electrically conductive layer structures with a plurality of electrically insulating layer structures, for example by applying pressure and / or by supplying heat. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may comprise resin and / or glass fiber, so-called prepregs, or FR4 materials. The individual electrically conductive layer structures may be connected to one another in the desired manner by forming holes through the laminate, for example by laser drilling or mechanical drilling, and by partially or completely filling these holes with an electrically conductive material, in particular copper, to form vias or any other through-hole connections. The filled holes connect the entire stack (i.e., through-hole connections extending through a plurality of layers or the entire stack), or the filled holes connect at least two electrically conductive layers, so-called vias. Similarly, optical interconnects may be formed through the various layers of the stack to accommodate an electro-optical circuit board (EOCB). Printed circuit boards are typically configured to accommodate one or more components on one or both opposing surfaces of a plate-shaped printed circuit board. The one or more components may be connected to the corresponding major surfaces by soldering. The dielectric portion of the PCB may include a resin with reinforcing fibers (e.g., glass fibers).

[0049] In an embodiment, the component carrier is an integrated circuit substrate. In the context of this application, the term "integrated circuit substrate" (IC substrate) may particularly refer to a component carrier having dimensions and pitches that are tailored to meet the requirements of the integrated circuit components (particularly, semiconductor chips) mounted on the integrated circuit substrate. An IC substrate can be a relatively small component carrier relative to a PCB, on which one or more integrated circuit components can be mounted and which can serve as a connection body between one or more chips and the PCB, or the component carrier can be plugged into a socket mounted on the PCB. For example, the IC substrate can have approximately the same dimensions as the electronic components to be mounted on the IC substrate (e.g., in the case of a chip-scale package (CSP)). In other embodiments, the IC substrate can be larger than the designated component (e.g., in a flip-chip ball grid array (FCBGA) configuration). More specifically, an IC substrate can be understood as a carrier for electrical connectors or electrical grids, as well as a component carrier for connectors arranged laterally and / or vertically, comparable to a printed circuit board (PCB) but with a significantly higher density. The horizontal connectors are, for example, conductive paths, while the vertical connectors can be, for example, drilled holes. These horizontal connectors and / or vertical connectors are arranged within the IC substrate and can be used to provide electrical, thermal and / or mechanical connections between accommodated components or unaccommodated components (e.g., bare chips), in particular IC chips, and printed circuit boards or interposers. The dielectric part of the IC substrate can be made of a resin with reinforcing particles (e.g., reinforcing spherical pieces, in particular glass spherical pieces). The spacing of the IC substrate - that is, the distance between the corresponding edges of two adjacent metal structures - can be no more than 150 μm, in particular no more than 100 μm. In contrast, the spacing of some types of PCBs can be at least 200 μm, in particular at least 300 μm.

[0050] The substrate or interposer may include or be composed of a layer of at least one of the following: glass; silicon (Si) and / or a photosensitive or dry-etchable organic material, such as an epoxy-based stack material (e.g., an epoxy-based stack film); or a polymer compound (the polymer compound may or may not include photosensitive and / or heat-sensitive molecules), such as polyimide or polybenzoxazole.

[0051] In an embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin or polymer, such as an epoxy resin, a cyanate resin, a benzocyclobutene resin, a melamine derivative, poly(p-phenylene benzobisoxazole) (PBO), a bismaleimide-triazine resin; a polyphenylene derivative (e.g., based on polyphenylene ether, PPE), a polyimide (PI), a polyamide (PA), a liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), dibenzocyclobutene (Bisbenzocyclobutene, BCB) and / or a combination thereof. Reinforcement layer structures made of, for example, glass (multilayer glass) such as meshes, fibers, spheres or other types of filler particles may also be used to form a composite. Semi-cured resins combined with reinforcing agents, such as fibers impregnated with the above resins, are referred to as prepregs. These prepregs are usually named after their properties, such as FR4 or FR5, which describe their flame retardant properties. While prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials, particularly epoxy-based stacked materials (e.g., stacked films) or photosensitive dielectric materials, may also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers, and / or cyanate ester resins may be preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low, very low, or ultra-low DK materials may be used as electrical insulation structures in component carriers.

[0052] In an embodiment, the at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, titanium, and magnesium. Although copper is generally preferred, other materials or coated versions thereof are also possible, in particular versions coated with superconducting materials or conductive polymers, such as graphene or poly (3,4-ethylenedioxythiophene) (PEDOT), respectively.

[0053] The at least one component can be selected from at least one of the following: a non-electrically conductive inlay, an electrically conductive inlay (e.g., a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g., a heat pipe), an optical element (e.g., an optical waveguide or optical conductor connector), an electronic component, or a combination thereof. The inlay can be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which can be surface-mounted to facilitate heat dissipation. Suitable materials are defined by their thermal conductivity, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides, and / or ceramics, such as copper, aluminum oxide (Al2O3), or aluminum nitride (AlN). Other geometries with increased surface area are also often used to increase heat exchange capacity. Furthermore, the component may be an active electronic component (having at least one realized pn junction), a passive electronic component such as a resistor, an inductor, or a capacitor, an electronic chip, a memory device (e.g., a DRAM or other data memory), a filter, an integrated circuit (e.g., a field programmable gate array (FPGA), a programmable array logic (PAL), a general array logic (GAL), and a complex programmable logic device (CPLD)), a signal processing component, a power management component (e.g., a field effect transistor (FET), a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS), a junction field effect transistor (JFET), or an insulated gate field effect transistor (IGFET)). In some embodiments, the present invention relates to a device comprising a first insulator, a second insulator, a first insulator, a second insulator (secondary insulator), a first ... The component can be surface-mounted on a component carrier.In addition, other components can also be used as components, in particular components that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment.

[0054] In an embodiment, the component carrier is a laminated component carrier. In this embodiment, the component carrier is a composite of multiple layers that are stacked and connected together by applying pressure and / or heat.

[0055] After the internal layer structure of the component carrier has been treated, one or both main surfaces of the treated layer structure can be covered symmetrically or asymmetrically with one or more further electrically insulating and / or electrically conductive layer structures (in particular, by lamination). In other words, the stacking can be continued until the desired number of layers is obtained.

[0056] After the formation of the stack having the electrically insulating layer structure and the electrically conductive layer structure has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0057] In particular, in terms of surface treatment, an electrically insulating solder mask can be applied to one or both major surfaces of a laminate or component carrier. For example, such a solder mask can be formed over the entire major surface, and the solder mask layer can then be patterned to expose one or more electrically conductive surface portions that will be used to electrically connect the component carrier to an electronic peripheral. Surface portions of the component carrier that remain covered with the solder mask, particularly those containing copper, can be effectively protected from oxidation or corrosion.

[0058] In terms of surface treatment, a surface finishing portion can also be selectively applied to the exposed electrically conductive surface portion of the component carrier. Such a surface finishing portion can be an electrically conductive covering material on the exposed electrically conductive layer structure (such as a pad, a conductive trace, etc., in particular including or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (in particular copper) will be oxidized, thereby reducing the reliability of the component carrier. In addition, the surface finishing portion can be formed as a joint between a surface mounted component and a component carrier, for example. The surface finishing portion has the function of protecting the exposed electrically conductive layer structure (in particular copper circuit), and the surface finishing portion can be joined to one or more components, for example by welding. Examples of suitable materials for the surface finishing portion are organic solderability preservatives (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), gold (in particular hard gold), chemical tin, nickel gold, nickel palladium, etc.

[0059] The aspects defined above and further aspects of the present invention are apparent from and will be explained with reference to the examples of embodiment described hereinafter. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1A cross-sectional view of a package according to an exemplary embodiment of the present invention is shown.

[0061] Figure 2 Shown according to Figure 1 A plan view of a portion of the package.

[0062] Figure 3 Shown according to Figure 1 A plan view of the larger portion of the package.

[0063] Figures 4 to 7 A side view of a package according to an exemplary embodiment of the present invention is shown.

[0064] Figure 8 A plan view of a package according to an exemplary embodiment of the present invention is shown.

[0065] Figure 9 A three-dimensional diagram of a package according to an exemplary embodiment of the present invention is shown.

[0066] Figures 10 to 12 A multi-component module of a package according to an exemplary embodiment of the invention is shown.

[0067] The illustrations in the drawings are schematically shown. In different drawings, similar or identical elements are provided with the same reference signs. DETAILED DESCRIPTION

[0068] When components are embedded in a component carrier, crosstalk between adjacent components that include wires that are very close to each other can be a traditional problem. For example, the embedded components can have corresponding wires that are very close to each other, and in particular, the embedded components can have corresponding wires that are very close to each other between different embedded high-frequency components.

[0069] According to an exemplary embodiment, the package includes a component carrier (e.g., a PCB) having a (e.g., laminated) stack of layers. The stack can be equipped with a multi-component module having at least two separate active parts, each of which is configured to actively contribute to the function of the package during operation. Preferably, the multi-component module is a single body, so that the single body can be easily handled during the manufacture of the package. Advantageously, an electrically conductive shielding structure can be arranged in the package, which is used to at least partially shield the at least two active parts from each other to suppress electromagnetic interference caused by undesirable interactions between different active parts. As a result, the active parts of the multi-component module can be operated in a low-loss, high-quality manner, even when the active parts of the multi-component module are positioned in a spatially close manner. In view of the EMI protection integrated in the package, a high electrical reliability of the package can be ensured.

[0070] In short, in an exemplary embodiment, EMI shielding for a chip embedded package can be provided. In view of the electromagnetic interference from one active part (e.g., a conductor) to another active part (e.g., a conductor), the provision of a shielding structure can reduce crosstalk. For example, the electrically conductive shielding structure can be implemented as one or more metal vias in a chip-to-chip connection area, such as a boundary area between two chips. For example, the electrically conductive shielding structure can be formed based on a metal graphic portion in a stacked layer (the metal graphic portion can, for example, be connected to a ground layer or another dielectric reference potential). Advantageously, this can allow EMI shielding to be generated, which in turn can solve the crosstalk problem. In particular, the electrically conductive shielding structure can be implemented as an array of metal vias, as a metal shielding wall, as a metal Faraday cage, etc. Alternatively, the electrically conductive shielding member can include a non-metallic material, in particular, the electrically conductive shielding member can include a dielectric having a dielectric constant greater than 10 4 The electrically conductive shielding member may comprise a non-metallic material having an electrical conductivity of 800 s / m. For example, the electrically conductive shielding member may comprise graphite. Advantageously, any of the electrically conductive shielding structures may be connected to a reference potential, such as ground, to achieve particularly robust EMI protection. In particular, such EMI shielding structures may provide EMI protection for chip-embedded packages, suppressing or even eliminating crosstalk. More particularly, such EMI shielding structures may be particularly advantageous for packages configured to accommodate high-frequency applications.

[0071] Compared to conventional methods, exemplary embodiments of the present invention utilizing a single-body multi-component module can shorten assembly time compared to conventional wafer mounting cycle times. In addition, this approach can reduce the risk of wafer tilt and / or offset problems, which can be particularly pronounced when the wafers are very small. In particular, packages with multi-component modules can be embedded in stacked components to obtain multi-chip embedded packages. This structure not only improves the efficiency of embedding components by embedding multiple wafers at a time, but also improves the efficiency of component manufacturing, and can improve the utilization rate of wafer layout at the wafer level by reducing the singulation frequency and by reducing the cutting area.

[0072] Advantages that can be achieved by providing a package according to an exemplary embodiment of the present invention are: suppression or elimination of crosstalk between different active parts in a shared package; high efficiency and low yield loss of wafer bonding; and reduction in the workload to reduce or eliminate crosstalk.

[0073] While many applications for such a package are possible, an exemplary application of an exemplary embodiment of the present invention relates to an automotive radar module.Another application of an exemplary embodiment of the present invention is in a device operating according to the 60 GHz wireless networking protocol, also denoted 60 GHz WiGig.

[0074] According to an exemplary embodiment of the present invention, a package includes: a component carrier, which includes a stack, which includes at least one electrically conductive layer structure and at least an electrically insulating layer structure; a cavity formed in the stack; a multi-component module, which is arranged in or on the stack, and the multi-component module includes at least two active parts; and a conductive shielding structure, which is configured to at least partially seal the at least two active parts from corresponding electromagnetic interference.

[0075] For example, a conductive shielding structure is at least partially disposed between the two active parts. Furthermore, the conductive shielding structure can be disposed on a multi-component module. For example, the multi-component module includes at least two components, each of which is associated with a corresponding one of the at least two active parts. For example, the multi-component module includes a common inorganic infrastructure. In an embodiment, the multi-component module is constructed as a block structure. For example, the conductive shielding structure is at least partially disposed within (and / or on) the block structure. For example, the multi-component module includes at least two components (one of which is separate from the other). In particular, each of the at least two active parts can be disposed on a corresponding component, preferably, each of the at least two active parts can be disposed on a corresponding component and on the same side. For example, the multi-component module includes a cluster comprising a plurality of components, in particular, the cluster comprising a plurality of components embedded within the cluster. Components having different heights in the stacking direction can be embedded within the cluster and / or components having different heights in the stacking direction can be embedded within the block. Alternatively, the heights of the components embedded in the cluster may be similar, in particular, the heights of the components embedded in the cluster may be equal. In an embodiment, the multi-component module comprises an encapsulating shielding member, preferably, the encapsulating shielding member is made of an organic material. For example, the stack comprises a cavity, and the multi-component module is at least partially embedded in the stack. For example, the conductive shielding structure is at least partially embedded in the stack, in particular, the conductive shielding structure is at least partially embedded in one of the electrically insulating structures of the stack. For example, the conductive shielding structure is arranged in a first electrically insulating layer structure and is in contact with the multi-component module. In particular, the multi-component module may be encapsulated by the material of at least one electrically insulating layer structure of the stack. In an embodiment, the material may be suitable as a compensating part with respect to the mentioned cavity-component with respect to the stack-component CTE. In particular, the conductive shielding structure may be electrically connected to an electrically conductive structure of the stack. For example, the shielding structure is not in direct contact with a conductive area arranged on the multi-component module. For example, the multi-component module includes at least one conductive region configured to connect to the shielding structure and / or configured to align with the shielding structure. In an embodiment, the at least one conductive region includes one or more sub-regions, preferably, the one or more sub-regions are disposed between the two active regions, and more preferably, the one or more sub-regions are not electrically connected to at least one of the at least two active regions. In particular, the conductive shielding structure may include separate conductive walls. For example, the conductive shielding structure includes a plurality of vias. For example, the vias are connected to each other.In an embodiment, the vias have a height that is smaller (alternatively, larger) than the distance between corresponding adjacent vias. For example, the height and / or distance may be less than 50 μm, in particular, the height and / or distance may be between 5 μm and 40 μm (alternatively, the height and / or distance may be in the range of from 40 μm to 100 μm). In an embodiment, the size and / or distance of the vias of the conductive shielding structure are different from the size of the vias of the electrically conductive layer structure of the stack, in particular, the vias of the conductive shielding structure and the vias of the electrically conductive layer structure of the stack are located on the same layer, and / or the vias of the conductive shielding structure and the vias of the electrically conductive layer structure of the stack are located in the same layer. For example, the conductive shielding structure surrounds at least one of the at least two active parts, in particular, the conductive shielding structure surrounds both or all of the at least two active parts. In an embodiment, the conductive shielding structure and the at least one electrically conductive layer structure of the stack are configured to connect the conductive shielding structure to ground. Preferably, the shielding structure may be used to provide an enclosure for radio frequency or high frequency applications.

[0076] In an embodiment, a conductive shielding structure is at least partially embedded in a multi-component module at the level of a redistribution layer (RDL) of the component (in particular, at least partially at the level of the RDL). The RDL may represent fan-out wires for connecting to integrated circuit elements (e.g., transistors or diodes) of the active part (e.g., in one or more chips).

[0077] In an embodiment, the shielding structure may be at least partially embedded in the multi-component module at the level of the transistors and / or diodes.

[0078] In embodiments, the shielding structure may not be connected to the multi-component module (eg, the shielding structure may be omitted). Figure 1 (See the arrow pointing to the via at reference numeral 126 in the figure). For example, the shielding structure can be connected to ground potential by different routing. Additionally or alternatively, the shielding structure can be located at a different vertical level than the conductive part of the active part (preferably, the shielding structure can be located at a higher vertical level than the conductive part of the active part). Without being bound by a particular theory, it is believed that it makes sense to have the shielding wall higher than the contact part to better disrupt the established electric field.

[0079] Exemplary embodiments of the present invention can solve the crosstalk problem by separating a conventional chip into different components or active parts of a multi-component module and providing EMI protection between active areas or between components of the multi-component module. Compared to separate independent chips, this approach can also produce favorable characteristics in terms of wafer bonding cycle time and reliability of correctly positioning and orienting the entire multi-component module. This can bring good results in particular during encapsulation by resin or prepreg. The mentioned EMI protection can be provided, for example, by an electrically conductive shielding structure, which can be implemented, for example, as a shielding wall or a Faraday cage. For example, metal vias on the chip configured for EMI shielding can be a preferred configuration. The advantages of the exemplary embodiments are particularly evident in high-speed and / or high-frequency packages where EMI phenomena may be particularly strong. It can also be advantageous to embed multi-component modules such as multi-chip modules in a common cavity without crosstalk problems, which can also reduce the package size. Furthermore, the high throughput and high yield of the manufactured packages may allow the manufacturing process of the exemplary embodiments of the present invention to be performed on an industrial scale, since the risk of undesired chip tilting and / or chip falling off when handling multi-component modules may be reduced compared to the conventional concept of embedding multiple chips independently.

[0080] Figure 1 A cross-sectional view of a package 100 according to an exemplary embodiment of the present invention is shown. Figure 2 Shown according to Figure 1 1 is a plan view of a portion of package 100 . Figure 3 Shown according to Figure 1 1 is a plan view of a larger portion of package 100.

[0081] The package 100 is manufactured based on a component carrier 102. The component carrier 102 can be an integrated circuit (IC) substrate or a printed circuit board (PCB). The component carrier 102 can include a laminated stack 104, which includes an electrically conductive layer structure 106 and an electrically insulating layer structure 108. For example, the electrically conductive layer structure 106 can include a patterned metal layer (e.g., a patterned copper foil or a patterned deposited and / or electroplated copper layer) and vertical through-connections, such as copper-filled vias, which can be formed by drilling and plating. The electrically insulating layer structure 108 can include a corresponding resin (e.g., a corresponding epoxy resin), preferably, the corresponding resin includes reinforcing particles (e.g., glass fibers or glass spheres, fillers, etc.). For example, the electrically insulating layer structure 108 can be made of prepreg, FR4, ABF, or a photosensitive dielectric material or other dielectric material. The electrically insulating layer structure 108 can also include a resin layer that does not contain glass (particularly, glass fibers).

[0082] Although not in Figure 1 106 , the outer electrically insulating layer structure 108 may be implemented as a patterned solder resist, thereby exposing selective portions of the uppermost electrically conductive layer structure 106 and selective portions of the lowermost electrically conductive layer structure 106. A solder structure (not shown) may be formed on the exposed portions of the uppermost electrically conductive layer structure 106 and the exposed portions of the lowermost electrically conductive layer structure 106. The solder structure or other electrically conductive interconnect structure (e.g., a sintered material or an electrically adhesive glue or a metal bonding structure) may allow an electrically conductive connection of the component carrier 102 to an electronic environment, for example, to be established between the component carrier 102 and at least one surface-mounted component and / or to a further electronic board (not shown).

[0083] The stack 104 includes a fully cured core 150 in a central portion of the package 100 , an upper multi-layer stack 152 formed on top of the core 150 , and a lower multi-layer stack 154 formed below the core 150 .

[0084] Furthermore, a cavity 122 may be formed in the stack 104, and in particular, in the core 150. For example, the cavity 122 may be a hole extending through the entire core 150. The cavity 122 is bounded at the bottom side of the cavity 122 by the lower multilayer stack 154 and laterally by the circumferential sidewalls of the core 150.

[0085] Furthermore, a multi-component module 110 is embedded in the cavity 122 of the stack 104. The multi-component module 110 is implemented as a single integrated physical body that can be handled as a single piece during the manufacturing process and includes two active parts 112, 114 that are functionally independent. Figure 1Multi-component module 110 includes a first electronic component 118 and a second electronic component 120. The sidewalls of first electronic component 118 are connected to the sidewalls of second electronic component 120, for example, by gluing or fabricating the first electronic component 118 and the second electronic component 120 in a single silicon substrate. For example, each of first electronic component 118 and second electronic component 120 is implemented as a semiconductor chip, such as one fabricated using silicon technology. First electronic component 118 includes a first active portion 112 located on the upper surface of the semiconductor substrate. First active portion 112 may include at least one monolithic integrated circuit component, such as a transistor and / or a diode. Accordingly, second electronic component 120 includes a second active portion 114 located on the upper surface of the semiconductor substrate. Second active portion 114 may include at least one monolithic integrated circuit component, such as a transistor and / or a diode. Thus, first electronic component 118 is associated with first active portion 112, and second electronic component 120 is associated with second active portion 114.

[0086] More specifically, multi-component module 110 is embedded in stack 104 so as to be surrounded by electrically insulating layer structure 108. However, at its upper main surface, multi-component module 110 includes metal terminals that are electrically coupled to electrically conductive layer structure 106 of stack 104. More specifically, the metal terminals on the top side of multi-component module 110 can be coupled to the exterior of package 100 via connection vias 128 of electrically conductive layer structure 106. Connection vias 128, which perform an electrical connection function, can, for example, be electrically insulated relative to shielding vias 126, which provide a shielding function, as explained below. The terminals can provide electrical coupling of the respective active portions 112, 114 of components 118, 120 of multi-component module 110. Thus, multi-component module 110 can be electrically coupled to electrically conductive layer structure 106. At the upper main surface of the package 100 , the exposed electrically conductive layer structure 106 enables the transmission of signals between the active parts 112 , 114 of the multi-component module 110 and the electronic environment of the package 100 through connecting vias 128 .

[0087] During operation of the package 100, high-frequency applications may be performed, for example for processing high-frequency signals in a frequency range from 1 GHz to 50 GHz. Such high-frequency signals may be processed by one or both of the first electronic component 118 and the second electronic component 120. This may result in the generation of high-frequency electromagnetic radiation in the environment of the electronic components 118, 120, and may therefore bring about the risk of undesirable electromagnetic interference (EMI) between the electronic components 118, 120 and in particular between the active parts 112, 114 of the electronic components 118, 120. In order to suppress or even eliminate such undesirable EMI phenomena, an electrically conductive shielding structure 116 is provided at the package 100, and the electrically conductive shielding structure 116 is configured to shield the active parts 112, 114 from each other in terms of crosstalk caused by electromagnetic interference. As shown, the shielding structure 116 is disposed between the active portions 112 and 114. More specifically, the shielding structure 116 is disposed at a lateral junction between a first electronic component 118 having a first active portion 112 and a second electronic component 120 having a second active portion 114. Figure 1 , the shield structure 116 can be arranged directly on top of the multi-component module 110. A portion of the shield structure 116 is embedded in the electrically insulating layer structure 108 of the stack 104 so as to be in close spatial proximity to the embedded components 118, 120 of the multi-component module 110. Given this spatial arrangement of the shield structure 116, the suppression of undesirable EMI phenomena by the shield structure 116 can be particularly significant.

[0088] Now also refer to Figure 2 and Figure 3 The shielding structure 116 includes a linear array of a plurality of metal shielding vias 126. Preferably, the shielding structure 116 can be brought to a reference potential, for example, the shielding structure 116 can be brought to a ground potential. Figure 3 As shown, the array of shielding vias 126 extends on top of and along the connection area between the first electronic component 118 and the second electronic component 120 .

[0089] Figure 2 Schematically illustrates how an electromagnetic field 156 may form in the environment of the first active part 112 when the first electronic component 118 is operated according to a high frequency application. Accordingly, Figure 2The schematic diagram shows how an electromagnetic field 158 may form in the environment of the second active part 114 when the second electronic component 120 is operated according to a high-frequency application. Without the shielding structure 116, the electromagnetic field 156 may interact with the second active part 114 and / or the electromagnetic field 158 may interact with the first active part 112, which may cause undesirable electromagnetic interference (EMI) and may disrupt the operation of the package 100. However, the rows of metallic shielding vias 126 at the junction between the electronic components 118, 120 can shield such electromagnetic fields 156, 158 and thus reduce or even eliminate EMI between different parts of the integrally formed multi-component module 110. The shielding structure 116 can be electrically disconnected from the multi-component module 110 so that the shielding structure 116 can independently reach a desired electrical potential to provide effective EMI protection. Advantageously, crosstalk problems from electromagnetic interference can thus be effectively suppressed.

[0090] However, the shielding structure 116 may also be electrically coupled to and / or aligned with at least one conductive region of the multi-component module 110. For example, the conductive region may include a plurality of sub-regions, which are arranged, for example, between the active parts 112, 114, preferably electrically disconnected from the active parts 112, 114.

[0091] Figures 4 to 7 A side view of a package 100 is shown according to an exemplary embodiment of the present invention.

[0092] Reference Figure 4 , showing the Figures 1 to 3 1 . A side view of a portion of the package 100 corresponding to the architecture of the shield structure 116 is shown. As shown, the shielding vias 126 of the shielding structure 116 can be electrically connected to each other via an electrically conductive connecting bar 140 on top of the shielding vias 126. For example, the electrically conductive connecting bar 140 can be a metal strip that interconnects multiple shielding vias 126 arranged along a straight or linear path. For example, the electrically conductive connecting bar 140 can be implemented as a patterned portion of a metal layer, for example, the electrically conductive connecting bar 140 can be implemented as part of a structured copper foil or a plated copper pad. Alternatively, the electrically conductive connecting bar 140 can include other metals, such as nickel, aluminum, titanium, chromium, or tungsten, and the electrically conductive connecting bar 140 can be formed by electroless plating or sputtering and / or electroplating processes. Through the electrically conductive connecting bar 140, a target reference potential 138 (e.g., ground potential) can be applied to all shielding vias 126 connected to the electrically conductive connecting bar. Therefore, this design may short-circuit at the target area where the function of shielding against crosstalk problems is realized. Figure 4In an embodiment, a frusto-conical shielding via 126 (which may be formed, for example, by laser drilling followed by plating) is directly connected to the upper side of the multi-component module 110 . Figure 4 The embodiment can be represented as a shielding configuration of vias on silicon.

[0093] Figure 4 The height H of each shielding via 126, the distance D between the bottom sides of adjacent shielding vias 126, and the characteristic distance L between the bottom of one shielding via 126 and the top of the adjacent shielding via 126 (this characteristic distance may also be expressed as an aperture) are shown. The characteristic distance L can be essentially calculated as the square root of the sum of the square of the height H and the square of the distance D. Each of the height H and the distance D can be, for example, less than 50 μm—e.g., in the range of 5 μm to 40 μm—to achieve efficient shielding. The parameters H, D, and L can be design parameters used to adjust or fine-tune the functionality of the shielding structure 116. Preferably, the characteristic maximum mutual distance value L of the shielding vias 116 (defined as the square root of the sum of the square of the height H of the shielding vias 126 and the square of the distance D between corresponding adjacent shielding vias 126) can be in the range of from 80 μm to 8000 μm for frequencies in the range of from 1 GHz to 100 GHz for high-frequency signals propagating in the package 100. Therefore, a suitable value of L can depend on the operating frequency. Advantageously, based on the formula SE=20*lg(λ / 2L), an appropriate maximum mutual distance value (or the longest dimension of the hole pitch) L can be determined as the basis for the manufacturing method for the wavelength λ of the high-frequency signal propagating in the package 100 during operation to meet the predetermined target value of the shielding effectiveness SE, where lg can represent the logarithm log 10 .

[0094] For example, the longest dimension of the shielding aperture represented by the characteristic distance L may be 45 μm. The calculation of the wavelength λ of the high frequency radiation may be based on the well-known equation λ=c / (f*ε r -1 ), where c is the speed of light, f is the frequency of the high-frequency radiation, and ε r is the dielectric constant of the medium.

[0095] Table 1 below shows advantageous parameter values:

[0096]

[0097] Table 1: Favorable parameter values ​​for adjusting shielding effectiveness are underlined. Simply put, the higher the frequency, the smaller the hole pitch required to achieve a certain shielding performance. The underlined values ​​in Table 1 provide good EMI shielding performance. EMI hole pitches smaller than 128 μm achieve good shielding performance. Designs with zero hole pitch for shielding are particularly advantageous. Further calculations indicate that high-frequency values, especially below 50 GHz, provide safe and non-resonant results.

[0098] Figure 5 The implementation method and Figure 4 The embodiments differ in particular in that, according to Figure 5 , a planar gasket 160 is arranged between the frusto-conical shielding via 126 and the upper side of the multi-component module 110. Advantageously, the metallic planar gasket 160 also contributes to the shielding function. Figure 5 An embodiment can be represented by a shielded configuration of vias on the chip's copper pads. The vias can be formed from the electrically insulating layer structure of the component carrier stack and drilled down to the chip pads aligned with the vias. This structure can be implemented simultaneously with the vias on the stack, thus offering high efficiency from a manufacturing perspective.

[0099] Figure 6 The implementation method and Figure 4 The embodiments differ in particular in that, according to Figure 6 , a continuous metal layer 162 (or a continuous metal strip) is arranged between the frusto-conical shielding via 126 and the upper side of the multi-component module 110. Advantageously, the horizontal continuous metal layer 162 (or horizontal continuous metal strip) may also contribute to the shielding function. Figure 6 The embodiment can be expressed as a shielding configuration of vias on the ground copper of the chip. By using a continuous metal layer on the chip, the alignment difficulty between the shielding vias, the internal structure of the chip and the continuous metal layer can be reduced from a manufacturing perspective.

[0100] Figure 7 The implementation method and Figure 6 The embodiments differ in particular in that, according to Figure 7 , the shield structure 116 includes a continuous metal shield wall 124 located between a continuous metal layer 162 (or continuous metal strip) on the bottom side and an electrically conductive connecting rod 140 on the top side. Figure 7As shown, a continuous metal layer 162 is arranged on the upper side of the multi-component module 110. In addition, a trench can be first formed (e.g., by etching or drilling) in the electrically insulating layer on the metal layer 162, and then filled by electroless plating or sputtering and / or electroplating. Excellent shielding performance can be achieved by the vertical continuous metal shielding wall 124 at the junction between the first electronic component 118 and the second electronic component 120 of the multi-component module 110. Figure 7 The embodiment can be represented as a copper wall shield configuration.

[0101] Figure 8 A plan view of a package 100 according to an exemplary embodiment of the present invention is shown.

[0102] Figure 8 The implementation method and Figure 3 The embodiments differ in particular in that, according to Figure 8 , the shield structure 116 circumferentially surrounds each of the active portions 112, 114. More specifically, Figure 8 The embodiment includes a circumferentially closed first annular array of shielding vias 126 on the top side of the multi-component module 110 and surrounding the first electronic component 118. In addition, Figure 8 The embodiment includes a circumferentially closed second annular array of shielding vias 126 on the top side of the multi-component module 110 and surrounding the second electronic component 120. Along the connection joint between the first electronic component 118 and the second electronic component 120, the annular array can share shielding vias 116 to improve compactness.

[0103] As an alternative to the annular array of shielded vias 116, as Figure 8 As shown, a first annular continuous shielding wall that is circumferentially closed around the first electronic component 118 can also be provided on the top side of the multi-component module 110, and a second annular continuous shielding wall (not shown) that is circumferentially closed around the second electronic component 120 can be provided on the top side of the multi-component module 110.

[0104] Figure 9 A three-dimensional diagram of a package 100 according to an exemplary embodiment of the present invention is shown. The upper diagram shows an overview and the lower diagram shows a detailed view.

[0105] according to Figure 9 , showing that according to Figure 5The electrically conductive connecting rod 140 connecting the shielding vias 126 can form an EMI shielding wall and can be connected to a reference potential, such as ground potential. The connecting vias 128 on the left side of the array of shielding vias 126 can correspond to the first electronic component 118, while the connecting vias 128 on the right side of the array of shielding vias 126 can correspond to the second electronic component 120. Figure 9 As shown, the shielding vias 126 that implement the electromagnetic shielding function may have a size and / or a spacing D that is different from the size and / or spacing d between the vias 128 that implement the electrical connection function of the electrically conductive layer structure 106. Therefore, the size parameter can be used as a design parameter for independently adjusting the shielding function of the shielding vias 126 and the electrical connection function of the connection vias 128.

[0106] Alternatively, d and D may be the same.

[0107] As shown, the shielding vias 126 and the connecting vias 128 can be formed on (and / or in) the same electrically insulating layer structure 108. Advantageously, the shielding vias 126 and the connecting vias 128 can be formed in the same plane, for example, by patterning a common metal layer and / or by performing a common laser drilling and plating process. This results in a particularly low manufacturing effort.

[0108] Figures 10 to 12 A multi-component module 110 of a package 100 according to another exemplary embodiment of the present invention is shown.

[0109] Figure 10 The implementation method and Figure 1 The embodiments differ in particular in that, according to Figure 10 , the multi-component module 110 includes a common inorganic structure 130 for both active parts 112, 114. This common inorganic structure 130 can be a semiconductor body, such as a silicon substrate, in which the active parts 112, 114 are monolithically integrated. In other words, the common semiconductor body can serve as a basis for forming the active parts 112, 114 in different surface portions of the semiconductor body. Thus, different integrated circuit elements can be formed in different surface portions of the semiconductor body to form spatially separated active parts 112, 114 that share the common integrated semiconductor body.

[0110] For example, you can then Figure 10 A shielding structure 116 is formed on the top side of the multi-component module 110 and between the active parts 112, 114 on the common inorganic structure 130. Alternatively, the inorganic structure 130 may also include ceramic, glass, etc.

[0111] Figure 11 The implementation method and Figure 1 The embodiments differ in particular in that, according to Figure 11 The multi-component module 110 is constructed as a block structure 132, which can be an organic board structure. For example, the block structure 132 can be a printed circuit board or an integrated circuit substrate with embedded electronic components 118, 120. This block structure 132 can be embedded as a whole in a stack 104 of another component carrier 102, for example, as shown in FIG. Figure 1 In the manner shown. For example, the shielding structure 116 can be arranged in the block structure 132, and / or the shielding structure 116 can be arranged on the block structure 132. In the embodiment shown, the shielding structure 116 can be a metal shielding wall 124 that is partially formed inside the block structure 132 and partially formed outside the block structure 132. However, also in this embodiment, the shielding structure 116 can be formed by an array of shielding vias 126 (not shown). The multi-component module 110 may include an encapsulation portion 136, which may include an organic material such as an epoxy resin, prepreg, etc. In addition, the block structure 132 may also include an electrically conductive layer structure 166, so that the embedded electronic components 118, 120 can be electrically contacted at the outer surface of the block structure 132.

[0112] Figure 12 The implementation method and Figure 1 The embodiments differ in particular in that, according to Figure 12 , the multi-component module 110 includes a cluster 134 that includes a plurality of components 118, 120 embedded in the cluster 134. For example, the multi-component module 110 can also be an array of chiplets in a common substrate.

[0113] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "an" does not exclude a plurality. Furthermore, elements described in connection with different embodiments may be combined.

[0114] It should also be noted that reference signs in the claims should not be construed as limiting the scope of the claims.

[0115] The implementation of the invention is not limited to the preferred embodiments shown in the drawings and described above. Rather, multiple variations using the solutions shown and according to the principle of the invention are possible, even in the case of fundamentally different embodiments.

Claims

1. A package (100), wherein: The package (100) comprises: A component carrier (102), the component carrier (102) comprising a stack (104), the stack (104) comprising at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108); a multi-component module (110) disposed at least partially on the stack (104) and / or disposed at least partially in the stack (104), the multi-component module (110) comprising at least two active parts (112, 114); and An electrically conductive shielding structure (116) is configured to at least partially shield the at least two active portions (112, 114) from each other with respect to electromagnetic interference.

2. The package (100) according to claim 1, wherein At least a portion of the shielding structure (116) is disposed between the at least two active portions (112, 114).

3. The package (100) according to claim 1 or 2, wherein: At least a portion of the shielding structure (116) is disposed on the multi-component module (110).

4. The package (100) according to any one of claims 1 to 3, wherein: The multi-component module (110) comprises at least two separate components (118, 120), wherein, in particular, each of the at least two separate components (118, 120) is associated with a respective one of the at least two active parts (112, 114).

5. The package (100) according to any one of claims 1 to 4, wherein: The multi-component module (110) comprises a common inorganic structure (130) for the at least two active parts (112, 114), in particular the common inorganic structure (130) is a semiconductor body in which the at least two active parts (112, 114) are integrated.

6. The package (100) according to any one of claims 1 to 5, wherein: The multi-component module (110) is designed as a block structure (132), in particular, the multi-component module (110) is designed as an organic panel structure.

7. The package (100) according to claim 6, wherein At least a portion of the shield structure (116) is disposed in the block structure (132), and / or at least a portion of the shield structure (116) is disposed on the block structure (132).

8. The package (100) according to any one of claims 1 to 7, wherein The multi-component module (110) includes a cluster (134) including a plurality of components (118, 120), for example, the cluster (134) includes a plurality of components (118, 120) embedded within the cluster (134).

9. The package (100) according to any one of claims 1 to 8, wherein: The multi-component module (110) includes an encapsulation (136), for example, the multi-component module (110) includes an encapsulation (136) comprising an organic material.

10. The package (100) according to any one of claims 1 to 9, wherein The ply stack (104) includes a cavity (122), at least a portion of which receives at least a portion of the multi-component module (110).

11. The package (100) according to any one of claims 1 to 10, wherein: At least a portion of the multi-component module (110) is embedded in the ply stack (104), in particular, at least a portion of the multi-component module (110) is embedded in the at least one electrically insulating layer structure (108).

12. The package (100) according to any one of claims 1 to 11, wherein At least a portion of the shielding structure (116) is embedded in the ply stack (104), in particular, at least a portion of the shielding structure (116) is embedded in the at least one electrically insulating layer structure (108).

13. The package (100) according to any one of claims 1 to 12, wherein: At least a portion of the multi-component module (110) is electrically coupled to the at least one electrically conductive layer structure (106).

14. The package (100) according to any one of claims 1 to 13, wherein The shielding structure (116) is electrically disconnected from the multi-component module (110).

15. The package (100) according to any one of claims 1 to 14, wherein The shielding structure (116) is electrically coupled to at least one conductive region of the multi-component module (110), and / or the shielding structure (116) is aligned with at least one conductive region of the multi-component module (110).

16. The package (100) according to claim 15, wherein The at least one conductive region comprises a plurality of sub-regions, for example, the plurality of sub-regions are arranged between the at least two active parts (112, 114), preferably, the plurality of sub-regions are electrically disconnected from the at least two active parts (112, 114).

17. The package (100) according to any one of claims 1 to 16, wherein The shielding structure (116) includes a shielding wall (124).

18. The package (100) according to any one of claims 1 to 17, wherein The shielding structure (116) includes a plurality of shielding vias (126).

19. The package (100) according to claim 18, wherein The package (100) includes at least one of the following features: The shielding vias (126) are electrically connected to each other, for example, the shielding vias (126) are electrically connected to each other through an electrically conductive connecting rod (140); The shielding vias (126) have a height (H) that is smaller than a distance (D) between corresponding adjacent shielding vias (126), wherein, for example, the height (H) and / or the distance (D) are smaller than 50 μm, in particular, the height (H) and / or the distance (D) are in the range from 5 μm to 40 μm; The shielding vias (126) have a maximum characteristic spacing value (L), the maximum characteristic spacing value (L) being defined as the square root of the sum of the square of the height (H) of the shielding vias (126) and the square of the distance (D) between corresponding adjacent shielding vias (126), the maximum characteristic spacing value (L) being in the range of 80 μm to 8000 μm for frequencies in the range of 1 GHz to 100 GHz for high frequency signals propagating in the package (100); The shielding vias (126) have dimensions and / or spacings (D) that differ from dimensions and / or spacings (d) between each other of the connecting vias (128) of the at least one electrically conductive layer structure (106), for example, on and / or in the same electrically insulating layer structure (108), the shielding vias (126) have dimensions and / or spacings (D) that differ from dimensions and / or spacings (d) between each other of the connecting vias (128) of the at least one electrically conductive layer structure (106).

20. The package (100) according to any one of claims 1 to 19, wherein The shielding structure (116) circumferentially surrounds at least one of the at least two active parts (112, 114), and in particular, the shielding structure (116) circumferentially surrounds each of the at least two active parts (112, 114).

21. The package (100) according to any one of claims 1 to 20, wherein The shielding structure (116) and / or the at least one electrically conductive layer structure (106) are configured to electrically couple the shielding structure (116) to a reference potential (138), for example, the shielding structure (116) and / or the at least one electrically conductive layer structure (106) are configured to electrically couple the shielding structure (116) to a ground potential.

22. A use of the package (100) according to any one of claims 1 to 21 for high-frequency applications, for example, the package (100) is used to process high-frequency signals, in particular, the package (100) is used to process high-frequency signals having a frequency of at least 1 GHz, preferably, the package (100) is used to process high-frequency signals having a frequency in the range from 1 GHz to 50 GHz.

23. A method of manufacturing a package (100), wherein: The method comprises: Providing a component carrier (102), the component carrier (102) comprising a stack (104), the stack (104) comprising at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108); Arranging a multi-component module (110) at least partially on and / or in the stack (104), the multi-component module (110) comprising at least two active parts (112, 114); and An electrically conductive shielding structure (116) is formed, the shielding structure (116) being configured to at least partially shield the at least two active portions (112, 114) from each other with respect to electromagnetic interference.

24. The method according to claim 23, in, The shielding structure (116) includes a plurality of shielding vias (126), the shielding vias (126) having a maximum feature spacing value L, the maximum feature spacing value L being defined as the square root of the sum of the square of the height (H) of the shielding vias (126) and the square of the distance (D) between corresponding adjacent shielding vias (126); The method comprises: determining the maximum characteristic spacing value L of the wavelength λ of the high-frequency signal propagating in the package (100) based on the formula SE=20*lg(λ / 2L) to meet the predetermined target value of the shielding effectiveness SE.

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