Over-temperature protection circuit, over-temperature protection method and electronic equipment

Abstract

The invention discloses an over-temperature protection circuit, an over-temperature protection method and electronic equipment. The over-temperature protection circuit comprises a temperature monitoring module, a comparison module and an interference detection module, wherein the temperature monitoring module is used for generating a temperature monitoring voltage according to the temperature of a detection target of the target circuit; the input end of the comparison module is connected with the temperature monitoring module, and the comparison module is used for triggering over-temperature protection on a target circuit under the condition that the temperature monitoring voltage reaches a reference threshold value; the interference detection module is connected with the target circuit, and the interference detection module is used for obtaining an interference source signal in the target circuit and adjusting the reference threshold value according to the interference source signal. According to the over-temperature protection circuit, mutual coupling between signal wiring and devices may cause that temperature monitoring voltage is affected by signals in a target circuit, the interference source signal intensity in the target circuit is monitored in real time, and the reference threshold value is dynamically adjusted based on the interference source signal intensity, so that the anti-interference capability of the over-temperature protection circuit is improved.

Description

Technical Field

[0001] The present application belongs to the field of over-temperature protection technology, and in particular relates to an over-temperature protection circuit, an over-temperature protection method and an electronic device. Background Art

[0002] In modern integrated circuits, over-temperature protection (OTP) circuits monitor chip temperature and trigger protection when the temperature exceeds a safe threshold, preventing device damage from overheating. However, due to the complex operating environment of integrated circuits, parasitic effects, and high-frequency interference are unavoidable. Traditional OTP circuits often experience false triggering due to transient noise, causing abnormal system shutdowns or frequent restarts. Summary of the Invention

[0003] The purpose of the present application is to provide an over-temperature protection circuit, an over-temperature protection method and an electronic device, aiming to solve the problem of false triggering of traditional over-temperature protection circuits due to interference.

[0004] A first aspect of an embodiment of the present application provides an over-temperature protection circuit for over-temperature protection of a target circuit, comprising: a temperature monitoring module, the temperature monitoring module being used to generate a temperature monitoring voltage based on the temperature of a detection target of the target circuit; a comparison module, the input end of the comparison module being connected to the temperature monitoring module, the comparison module being used to trigger over-temperature protection of the target circuit when the temperature monitoring voltage reaches a reference threshold; an interference detection module, the interference detection module being connected to the target circuit, the interference detection module being used to obtain an interference source signal in the target circuit and adjust the reference threshold based on the interference source signal.

[0005] In one embodiment, the interference detection module includes: a peak detection unit and a threshold adjustment unit; the peak detection unit is connected to the voltage fluctuation node of the target circuit, and is used to obtain the interference source signal, and obtain the peak value of the interference source signal based on the interference source signal, and output an interference detection voltage corresponding to the peak value of the interference source signal; the threshold adjustment unit is respectively connected to the peak detection unit and the comparison module, and the threshold adjustment unit is used to obtain a threshold variable based on the interference detection voltage, and obtain the reference threshold based on the sum of an initial threshold and the threshold variable.

[0006] In one embodiment, the peak detection unit includes an interference peak detection subunit and a smoothing processing subunit; the interference peak detection subunit is connected to the voltage fluctuation node of the target circuit, and the interference peak detection subunit is used to obtain the corresponding interference detection voltage based on the signal peak of the interference source signal at the voltage fluctuation node of the target circuit; the smoothing processing subunit is respectively connected to the interference peak detection subunit and the threshold adjustment unit, and the smoothing processing subunit is used to smooth the interference detection voltage.

[0007] In one embodiment, the threshold adjustment unit is configured to adopt a machine learning model to obtain the threshold variable according to the interference detection voltage.

[0008] In one embodiment, an adjustable filtering module is further included. The adjustable filtering module is arranged between the input end of the comparison module and the temperature monitoring module. The adjustable filtering module is also connected to the interference detection module. The adjustable filtering module is used to filter out the interference source signal in the temperature monitoring voltage by adjusting the filtering frequency range.

[0009] In one embodiment, the adjustable filtering module includes an active low-pass filtering unit, which is respectively connected to the input end of the comparison module, the temperature monitoring module and the interference detection module, and the active low-pass filtering unit is used to adjust its own cutoff frequency according to the interference source signal.

[0010] In one embodiment, the active low-pass filtering unit is configured to adopt a machine learning model to obtain the cut-off frequency according to the interference detection voltage.

[0011] A second aspect of an embodiment of the present application provides an over-temperature protection method, which is applied to an over-temperature protection circuit as described above, wherein the over-temperature protection circuit is used to perform over-temperature protection on a target circuit, and the over-temperature protection method includes: obtaining a signal peak value of an interference source signal at a voltage fluctuation node of the target circuit; obtaining a threshold variable based on the peak value of the interference source signal; obtaining a reference threshold based on the sum of an initial threshold and the threshold variable; and triggering over-temperature protection on the target circuit when the temperature monitoring voltage reaches the reference threshold.

[0012] A third aspect of an embodiment of the present application provides an electronic device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the over-temperature protection method as described above when executing the computer program.

[0013] A fourth aspect of an embodiment of the present application provides an electronic device, comprising the over-temperature protection circuit as described above.

[0014] The beneficial effects of the embodiments of the present application compared with the prior art are: in an integrated circuit, the mutual coupling between signal lines and devices may cause the temperature monitoring voltage to be affected by signals in other circuits. By real-time monitoring of the strength of the interference source signal in the target circuit and dynamically adjusting the reference threshold based on the strength of the interference source signal, the interference of the interference source signal on the over-temperature protection circuit can be reduced, and the anti-interference capability of the over-temperature protection circuit can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of an over-temperature protection circuit provided in one embodiment of the present application; Figure 2 A circuit diagram of an interference detection module provided in one embodiment of the present application; Figure 3 Another schematic diagram of an over-temperature protection circuit provided in one embodiment of the present application; Figure 4 A circuit diagram of an adjustable filter module provided in one embodiment of the present application; Figure 5 A circuit diagram of a comparison module provided in one embodiment of the present application; Figure 6 A flow chart of an over-temperature protection method provided in one embodiment of the present application; Figure 7 A schematic diagram of an electronic device provided in one embodiment of the present application; Figure 8 Another schematic diagram of an electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0016] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0017] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0018] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0019] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0020] Figure 1 A schematic diagram of an over-temperature protection circuit provided in an embodiment of the present application is shown. For ease of explanation, only the portion related to this embodiment is shown, which is described in detail as follows: An over-temperature protection circuit 10 is used to provide over-temperature protection for a target circuit 20 , and includes a temperature monitoring module 100 , a comparison module 200 , and an interference detection module 300 .

[0021] The temperature monitoring module 100 is used to generate a temperature monitoring voltage based on the target temperature of the target circuit 10. The input of the comparison module 200 is connected to the temperature monitoring module 100. The comparison module 200 is used to trigger over-temperature protection for the target circuit 20 when the temperature monitoring voltage reaches a reference threshold. The interference detection module 300 is connected to the target circuit 20 and is used to obtain the interference source signal in the target circuit 20 and adjust the reference threshold based on the interference source signal.

[0022] In an integrated circuit, the mutual coupling between signal lines and devices may cause the temperature monitoring voltage to be affected by the signal in the target circuit. By monitoring the strength of the interference source signal in the target circuit in real time and dynamically adjusting the reference threshold based on the strength of the interference source signal, the interference of the interference source signal on the over-temperature protection circuit can be reduced, thereby improving the anti-interference capability of the over-temperature protection circuit 10.

[0023] When adjusting the reference threshold, in order to improve the fault tolerance of the over-temperature protection circuit 10 , the reference threshold may be appropriately increased after being obtained according to the interference source signal.

[0024] Among them, the detection target can be the ambient temperature around the target circuit 20, or the temperature of an electronic device in the target circuit 20, and can be set specifically according to actual needs. When the over-temperature protection of the target circuit 20 is triggered, the over-temperature protection circuit 10 can control the target circuit 20 to perform operations such as power off and frequency reduction. The temperature monitoring voltage can be positively correlated with the temperature of the detection target or negatively correlated with the temperature of the detection target. When the temperature monitoring voltage is positively correlated with the temperature of the detection target, the temperature monitoring voltage reaches the reference threshold, which means that the temperature monitoring voltage is not lower than the reference threshold. When the temperature monitoring voltage is negatively correlated with the temperature of the detection target, the temperature monitoring voltage reaches the reference threshold, which means that the temperature monitoring voltage is not higher than the reference threshold.

[0025] The interference detection module 300 can be connected to a voltage fluctuation node in the target circuit 20 to obtain an interference source signal. The voltage fluctuation node can be a node with the largest signal fluctuation in the target circuit 20. The interference source signal includes normal signals transmitted by the voltage fluctuation node and other interference signals such as circuit oscillation signals.

[0026] For example, Figure 2 As shown, when the target circuit 20 is a switching power supply circuit, the voltage fluctuation node may be a connection point between an upper tube Q2 and a lower tube Q3 in the switching power supply circuit.

[0027] In one embodiment, if Figure 2 As shown, the interference detection module 300 includes: a peak detection unit 310 and a threshold adjustment unit 320.

[0028] The peak detection unit 310 is connected to the voltage fluctuation node of the target circuit 20, and is used to obtain the interference source signal, and obtain the peak value of the interference source signal based on the interference source signal, and output the interference detection voltage corresponding to the peak value of the interference source signal; the threshold adjustment unit 320 is respectively connected to the peak detection unit 310 and the comparison module 200, and the threshold adjustment unit 320 is used to obtain the threshold variable according to the interference detection voltage, and obtain the reference threshold based on the sum of the initial threshold and the threshold variable.

[0029] It is understandable that fluctuations in the interference source signal will cause fluctuations in the temperature monitoring voltage, so that the temperature monitoring voltage may be greater than or less than the ideal temperature monitoring voltage (i.e., the temperature monitoring voltage when not affected by the interference source signal), thereby affecting the comparison module 200's judgment of the actual temperature.

[0030] After the peak detection unit 310 obtains the interference detection voltage corresponding to the peak value of the interference source signal, the threshold adjustment unit 320 can adjust the reference threshold according to the interference detection voltage to adapt the over-temperature protection circuit 10 to the influence of the interference source signal.

[0031] Specifically, the initial threshold may be a threshold corresponding to the maximum acceptable temperature of the target circuit 20 in an ideal situation where there is no interference source signal.

[0032] In one embodiment, if Figure 2 As shown, the peak detection unit 310 includes an interference peak detection subunit 311 and a smoothing processing subunit 312; the interference peak detection subunit 311 is connected to the voltage fluctuation node of the target circuit 20, and the interference peak detection subunit 311 is used to obtain the corresponding interference detection voltage based on the signal peak of the interference source signal at the voltage fluctuation node of the target circuit 20; the smoothing processing subunit 312 is respectively connected to the interference peak detection subunit 311 and the threshold adjustment unit 320, and the smoothing processing subunit 312 is used to smooth the interference detection voltage.

[0033] For example, in one embodiment, Figure 2 As shown, the interference peak detection subunit 311 includes: a first operational amplifier U1, a second operational amplifier U2, a third operational amplifier U3, a first resistor R1, a first capacitor C1, a first diode D1, and a second diode D2. The smoothing processing subunit 312 includes: a third operational amplifier U3, a second resistor R2, a third resistor R3, a fourth resistor R4, and a second capacitor C2.

[0034] The positive input terminal of the first operational amplifier U1 is connected to the voltage fluctuation node of the target circuit 20, the output terminal of the first operational amplifier U1 is respectively connected to the cathode of the first diode D1 and the anode of the second diode D2, the reverse input terminal of the first operational amplifier U1 is respectively connected to the anode of the first diode D1 and the first end of the first resistor R1, the cathode of the second diode D2 is respectively connected to the first end of the first capacitor C1 and the positive input terminal of the second operational amplifier U2, the second end of the first capacitor C1 is grounded, and the reverse input terminal of the second operational amplifier U2 is connected to the second end of the first resistor R1 and the output terminal of the second operational amplifier U2.

[0035] The output end of the second operational amplifier U2 is also connected to the first end of the second resistor R2, the second end of the second resistor R2 is respectively connected to the inverting input end of the third operational amplifier U3, the first end of the third resistor R3, and the first end of the second capacitor C2, the positive input end of the third operational amplifier U3 is grounded through the fourth resistor R4, the output end of the third operational amplifier U3 is respectively connected to the second end of the third resistor R3 and the second end of the second capacitor C2, and the output end of the third operational amplifier U3 is used to output the interference detection voltage.

[0036] It should be noted that the first operational amplifier U1 and the first diode D1 are used to form an input buffer circuit, the second diode D2 and the first capacitor C1 are used to form a spike storage circuit, and the second operational amplifier U2 is used to form an output buffer circuit. The interference peak detection subunit 311 can generate an interference detection voltage that is positively correlated with the peak value of the interference source signal.

[0037] For example, in one embodiment, Figure 2 As shown, the threshold adjustment unit 320 includes a first logic control unit 321, a first digital potentiometer R5, a fifth resistor R6, a third capacitor C3 and a fourth operational amplifier U4.

[0038] The input end of the first logic control unit 321 is connected to the peak detection unit 310, and the first logic control unit 321 is connected to the control end of the first digital potentiometer R5. The first end of the first digital potentiometer R5 is used to access the operating voltage VDD, and the second end of the first digital potentiometer R5 is respectively connected to the first end of the fifth resistor R6, the first end of the third capacitor C3 and the inverting input end of the fourth operational amplifier U4. The positive input end of the fourth operational amplifier U4 is used to access the initial voltage VREF1 corresponding to the initial threshold value. The output end of the fourth operational amplifier U4 can be connected to the comparison module 200 to output the reference voltage VREF2 corresponding to the reference threshold value.

[0039] Specifically, the first logic control unit 321 may include a chip, a microprocessor, etc.

[0040] It should be noted that, by means of advance testing, the specific changes in the temperature monitoring voltage can be obtained under different interference detection voltages, and then the mapping relationship between the interference detection voltage and the required threshold variable can be obtained based on the specific changes in the temperature monitoring voltage. After the test is completed, the first logic control unit 321 can obtain the threshold variable and the corresponding reference threshold value based on the summarized mapping relationship and the detected interference detection voltage, thereby offsetting the fluctuation of the temperature monitoring voltage caused by the interference source signal by dynamically adjusting the reference threshold value.

[0041] For example, in one embodiment, if the temperature of the detection target is 85° without being affected by the interference source signal, the temperature monitoring voltage output by the temperature monitoring module 100 is 5V, and the temperature monitoring voltage is negatively correlated with the temperature of the detection target. Accordingly, the initial threshold value can be set to 5V. If the temperature of the detection target is 85° after being affected by the interference source signal, the temperature monitoring voltage output by the temperature monitoring module 100 fluctuates between 4.8V and 5.2V. The interference detection module can obtain a threshold variable of 0.2V based on the interference source signal and adjust the reference threshold value to 4.8V to offset the interference of the interference source signal.

[0042] In one embodiment, the threshold adjustment unit 320 is configured to use a machine learning model to obtain a threshold variable according to the interference detection voltage. The machine learning model can be implemented by executing a computer program stored in the first logic control unit 321.

[0043] It is understandable that by testing in advance, the specific changes in the temperature monitoring voltage can be obtained under different interference detection voltages, and then online or offline training can be used according to the specific changes in the temperature monitoring voltage to obtain a machine learning model that can automatically calculate the required threshold variables based on the interference detection voltage.

[0044] The first logic control unit 321 can obtain a machine learning model through training, and calculate the threshold variable according to the interference detection voltage. The threshold adjustment unit 320 can obtain a reference threshold according to the threshold variable and the initial threshold, and obtain and output a reference voltage VREF2 corresponding to the reference threshold by controlling the resistance value of the first digital potentiometer R5.

[0045] The use of machine learning models can achieve more accurate adjustment of the reference threshold, and through continuous training of the model, it can adapt to different application environments and conditions, have more comprehensive adaptive capabilities, and can broaden the applicability of the over-temperature protection circuit 10.

[0046] The trained machine learning model can also predict the interference trend at the next moment, and then pre-adjust the reference threshold in advance to reduce the impact of sudden spikes on the over-temperature protection circuit 10.

[0047] In one embodiment, if Figure 3 As shown, the over-temperature protection circuit 10 further includes an adjustable filtering module 400. The adjustable filtering module 400 is disposed between the input end of the comparison module 200 and the temperature monitoring module 100. The adjustable filtering module 400 is also connected to the interference detection module 300. The adjustable filtering module 400 is configured to filter out interference signals in the temperature monitoring voltage by adjusting the filtering frequency range, thereby retaining changes in the temperature monitoring voltage caused by the actual temperature rise.

[0048] After filtering the temperature monitoring voltage through the adjustable filter module 400, a temperature monitoring voltage corresponding to the actual temperature can be obtained. By cooperating with the adjustable filter module 400 and the interference detection module 300, the influence of the interference source signal on the over-temperature protection is further reduced, thereby realizing multi-level interference suppression.

[0049] In one embodiment, if Figure 4As shown, the adjustable filtering module 400 includes an active low-pass filtering unit, which is respectively connected to the input end of the comparison module 200, the temperature monitoring module 100 and the interference detection module 300. The active low-pass filtering unit is used to adjust its own cutoff frequency according to the interference source signal.

[0050] The limitations of traditional static filtering can be overcome by automatically adjusting the cutoff frequency of the active low-pass filter unit.

[0051] For example, in one embodiment, Figure 4 As shown, the active low-pass filter unit includes: a second logic control unit 410, a fourth capacitor C4, a fifth capacitor C5, a sixth resistor R7, a seventh resistor R9, a second digital potentiometer R8 and a fifth operational amplifier U5.

[0052] The first end of the fourth capacitor C4 is connected to the temperature monitoring module 100 for accessing the temperature monitoring voltage. The second end of the fourth capacitor C4 is connected to the first end of the sixth resistor R7. The second end of the sixth resistor R7 is respectively connected to the reverse input end of the fifth operational amplifier U5, the first end of the fifth capacitor C5, and the first end of the second digital potentiometer R8. The positive input end of the fifth operational amplifier U5 is grounded through the seventh resistor R9. The output end of the fifth operational amplifier U5 is respectively connected to the second end of the fifth capacitor C5, the second end of the second digital potentiometer R8, and the comparison module 200 for outputting a filtered temperature monitoring voltage.

[0053] Specifically, the second logic control unit 410 may include a chip, a microprocessor, etc.

[0054] In some embodiments, the first logic control unit 321 and the second logic control unit 410 may be the same logic control unit.

[0055] It should be noted that, by means of advance testing, the frequency change of the high-frequency interference signal in the temperature monitoring voltage can be obtained under different interference detection voltages, and then the mapping relationship between the interference detection voltage and the cutoff frequency of the active low-pass filtering unit can be obtained according to the frequency change of the high-frequency interference signal in the temperature monitoring voltage. The second logic control unit 410 can obtain the required cutoff frequency according to the summarized mapping relationship and the detected interference detection voltage, and adjust the resistance value of the second digital potentiometer R8 according to the required cutoff frequency to change the cutoff frequency of the active low-pass filtering unit.

[0056] In one embodiment, the active low-pass filtering unit is configured to adopt a machine learning model to obtain the cut-off frequency according to the interference detection voltage.

[0057] It is understandable that by conducting advance tests, the frequency change of the high-frequency interference signal in the temperature monitoring voltage can be obtained under different interference detection voltages, and then online or offline training can be used according to the frequency change of the high-frequency interference signal in the temperature monitoring voltage to obtain a machine learning model that can automatically calculate the required cutoff frequency based on the interference detection voltage.

[0058] The second logic control unit 410 can obtain a machine learning model through training, calculate the cutoff frequency according to the interference detection voltage, and adjust the resistance value of the second digital potentiometer R8 according to the cutoff frequency.

[0059] The use of machine learning models can achieve more precise adjustment of the cutoff frequency, and through continuous training of the model, it can adapt to different application environments and conditions, and have more comprehensive adaptive capabilities.

[0060] For example, in one embodiment, Figure 5 As shown, the comparison module 200 includes a sixth operational amplifier U6, the inverting input terminal of the sixth operational amplifier U6 is connected to the adjustable filtering module 400 to access the filtered temperature monitoring voltage, the positive input terminal of the sixth operational amplifier U6 is connected to the interference detection module 300 to access the reference voltage corresponding to the reference threshold, and the output terminal of the sixth operational amplifier U6 is connected to the target circuit 20.

[0061] It is understandable that the voltage outputted by the output terminal of the sixth operational amplifier U6 can be used to trigger the over-temperature protection of the target circuit 20 , for example, the target circuit 20 can be controlled to be powered off.

[0062] In one embodiment, the temperature monitoring module 100 includes a temperature sensor, and the temperature sensor is configured to generate a temperature monitoring voltage according to the temperature of a detection target of the target circuit.

[0063] For example, in one embodiment, Figure 5 As shown, the temperature sensor includes a constant current source I1 and a PNP transistor Q1. The output of the constant current source I1 is connected to the emitter of the PNP transistor Q1. The base and collector of the PNP transistor Q1 are both grounded. The emitter of the PNP transistor Q1 is used to output a temperature monitoring voltage. The temperature monitoring voltage is negatively correlated with the temperature of the detection target. The PNP transistor Q1 can be in contact with the detection target in the target circuit 20.

[0064] It should be noted that when the temperature of the PNP transistor Q1 changes, the on-resistance of the PNP transistor Q1 will decrease as the temperature rises, and accordingly, the temperature monitoring voltage will decrease. When the comparison module 200 detects that the temperature monitoring voltage reaches the reference threshold (that is, the temperature monitoring voltage is less than or equal to the reference voltage corresponding to the reference threshold), it can trigger over-temperature protection for the target circuit 20.

[0065] Specifically, the temperature sensor may also be at least one of a thermocouple sensor, a thermistor sensor, and a platinum resistance detector (RTD).

[0066] Figure 6 A flow chart of an over-temperature protection method provided by an embodiment of the present application is shown. For ease of illustration, only the portion related to this embodiment is shown, which is described in detail as follows: An over-temperature protection method is applied to the over-temperature protection circuit 10 as in any of the above embodiments. The over-temperature protection method includes steps S100 to S400.

[0067] Step S100: obtaining a signal peak value of an interference source signal at a voltage fluctuation node of a target circuit.

[0068] It should be noted that due to the large fluctuation of the interference source signal, its peak value will change rapidly. After obtaining the peak value of the interference source signal, in order to facilitate subsequent processing, the peak value of the interference source signal can be smoothed to obtain the interference detection voltage corresponding to the peak value of the interference source signal.

[0069] Step S200: obtaining a threshold variable according to the peak value of the interference source signal.

[0070] Specifically, the threshold variable corresponding to the interference detection voltage may be obtained according to the mapping relationship between the interference detection voltage and the threshold variable.

[0071] Step S300: obtaining a reference threshold based on the sum of the initial threshold and the threshold variable.

[0072] Step S400: triggering over-temperature protection of the target circuit when the temperature monitoring voltage reaches a reference threshold.

[0073] Through steps S100 to S400, the influence of the interference source signal on the over-temperature protection can be reduced, the accuracy and stability of the over-temperature protection of the target circuit can be improved, and the anti-interference capability of the over-temperature protection circuit 10 can be improved.

[0074] Figure 7 A schematic diagram of an electronic device provided in an embodiment of the present application is shown. For ease of explanation, only the portion related to this embodiment is shown, which is described in detail as follows: An electronic device 30 includes a memory 31, a processor 32, and a computer program 33 stored in the memory 31 and executable on the processor 32. When the processor 32 executes the computer program 33, an over-temperature protection method as described in any of the above embodiments is implemented.

[0075] The processor 32 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. A general-purpose processor may be a microprocessor or any conventional processor.

[0076] In some embodiments, the memory 31 may be an internal storage unit of the electronic device 30, such as a hard disk or memory of the electronic device 30. In other embodiments, the memory 31 may also be an external storage device of the electronic device 30, such as a plug-in hard disk equipped on the electronic device 30, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. Furthermore, the memory 31 may include both an internal storage unit of the electronic device 30 and an external storage device. The memory 31 is used to store an operating system, application programs, a boot loader, data, and other programs, such as the program code of the computer program 33. The memory 31 may also be used to temporarily store data that has been output or is about to be output.

[0077] Figure 8 A schematic diagram of an electronic device provided in an embodiment of the present application is shown. For ease of explanation, only the portion related to this embodiment is shown, which is described in detail as follows: An electronic device 40 includes the over-temperature protection circuit 10 according to any one of the above embodiments. The electronic device 40 may further include a target circuit 20.

[0078] Specifically, the electronic device 40 may be a power supply device, an LED driving device, an in-vehicle electronic device, or the like.

[0079] The over-temperature protection circuit 10 can detect the temperature of a specific component, structure or usage environment of the electronic device 40 , which is not limited in this embodiment.

[0080] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0081] Through the description of the above embodiments, those skilled in the art will understand that for the sake of convenience and brevity, only the division of the above functional modules is used as an example. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above.

[0082] It should be understood that the devices and methods disclosed in the several embodiments provided in this application can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of modules or units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another device. In addition, some features can be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0083] Units described as separate components may or may not be physically separate. Components shown as units may be one physical unit or multiple physical units. That is, they may be located in one place or distributed across multiple locations. Depending on actual needs, some or all of the units may be selected to achieve the objectives of this solution.

[0084] In addition, the functional units in the various embodiments of the present application may be integrated into a single processing unit; may also exist physically separately; or some units may be integrated into a single unit, while some units may exist physically separately. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0085] It should be noted that all or part of the above-mentioned embodiments provided in this application (for example, part or all of any feature) can be arbitrarily combined or used in conjunction with each other.

[0086] The above content is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. An over-temperature protection circuit, characterized in that: Used to provide over-temperature protection for the target circuit, including: a temperature monitoring module, the temperature monitoring module being configured to generate a temperature monitoring voltage according to a temperature of a detection target of the target circuit; a comparison module, wherein an input end of the comparison module is connected to the temperature monitoring module, and the comparison module is used to trigger over-temperature protection of the target circuit when the temperature monitoring voltage reaches a reference threshold; An interference detection module is connected to the target circuit, and is used to obtain an interference source signal in the target circuit and adjust the reference threshold according to the interference source signal.

2. The over-temperature protection circuit according to claim 1, wherein: The interference detection module includes: a peak detection unit and a threshold adjustment unit; The peak detection unit is connected to the voltage fluctuation node of the target circuit, and is used to obtain the interference source signal, obtain the peak value of the interference source signal according to the interference source signal, and output an interference detection voltage corresponding to the peak value of the interference source signal; The threshold adjustment unit is connected to the peak detection unit and the comparison module respectively, and is used to obtain a threshold variable according to the interference detection voltage, and obtain the reference threshold based on the sum of an initial threshold and the threshold variable.

3. The over-temperature protection circuit according to claim 2, wherein: The peak detection unit includes an interference peak detection subunit and a smoothing processing subunit; The interference peak detection subunit is connected to the voltage fluctuation node of the target circuit, and the interference peak detection subunit is used to obtain the corresponding interference detection voltage based on the signal peak of the interference source signal at the voltage fluctuation node of the target circuit; The smoothing processing subunit is connected to the interference peak detection subunit and the threshold adjustment unit respectively, and the smoothing processing subunit is used to perform smoothing processing on the interference detection voltage.

4. The over-temperature protection circuit according to claim 2, wherein: The threshold adjustment unit is configured to adopt a machine learning model to obtain the threshold variable according to the interference detection voltage.

5. The over-temperature protection circuit according to any one of claims 1 to 4, characterized in that: It also includes an adjustable filtering module, which is arranged between the input end of the comparison module and the temperature monitoring module. The adjustable filtering module is also connected to the interference detection module. The adjustable filtering module is used to filter out the interference source signal in the temperature monitoring voltage by adjusting the filtering frequency range.

6. The over-temperature protection circuit according to claim 5, characterized in that: The adjustable filtering module includes an active low-pass filtering unit, which is respectively connected to the input end of the comparison module, the temperature monitoring module and the interference detection module. The active low-pass filtering unit is used to adjust its own cutoff frequency according to the interference source signal.

7. The over-temperature protection circuit according to claim 6, wherein: The active low-pass filtering unit is configured to adopt a machine learning model to obtain the cut-off frequency according to the interference detection voltage.

8. An over-temperature protection method, characterized in that: The over-temperature protection circuit according to any one of claims 1 to 7 is used to protect a target circuit from over-temperature, and the over-temperature protection method includes: Obtaining a signal peak value of an interference source signal at a voltage fluctuation node of a target circuit; Obtaining a threshold variable according to the peak value of the interference source signal; Obtaining a reference threshold based on the sum of the initial threshold and the threshold variable; When the temperature monitoring voltage reaches the reference threshold, over-temperature protection of the target circuit is triggered.

9. An electronic device, characterized in that: The electronic device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the over-temperature protection method according to claim 8 is implemented.

10. An electronic device, characterized in that: The device comprises an over-temperature protection circuit as claimed in any one of claims 1 to 7.

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