Cleaning system and cleaning method for reaction chambers

Abstract

This invention relates to the field of semiconductor processing equipment technology, and more particularly to a cleaning system and method for a reaction chamber. The system includes a residue detection unit disposed within the reaction chamber for detecting the concentration of by-products deposited on the inner wall of the reaction chamber; a vibration cleaning unit comprising multiple vibration components, each vibration end of which abuts against the cavity wall of the reaction chamber; and a cleaning control unit communicatively connected to the residue detection unit and the vibration cleaning unit for controlling the multiple vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber based on the detection results of the residue detection unit. This invention utilizes the combined operation of vibration cleaning and gas cleaning processes to ensure that no by-products remain in the cleaned reaction chamber. This effectively avoids the repetitiveness of the cleaning process, improves product yield, and simultaneously slows down equipment aging, extending the equipment's service life.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment technology, and in particular to a cleaning system and method for a reaction chamber. Background Art

[0002] In the plasma reaction chamber of a semiconductor etching apparatus, a large number of byproducts, such as fluorocarbon polymers, particles, and other residues, are deposited on the inner wall of the chamber during the etching process. If these deposits are not effectively removed, they will affect the repeatability of subsequent processes, product yield, and accelerate equipment aging. Traditional gas cleaning methods (such as O2 or F-type gases) have limited effectiveness in removing residues stubbornly adhering to the inner wall of the reaction chamber and suffer from process inconsistencies. To address these issues, this invention provides a cleaning system and method for the reaction chamber. Summary of the Invention

[0003] To achieve the above objectives, the present invention provides a cleaning system for a reaction chamber, applied to the removal of deposited byproducts on the inner wall of the reaction chamber of a plasma processing device, comprising:

[0004] A residue detection unit, located inside the reaction chamber, is used to detect the concentration of by-products deposited on the inner wall of the reaction chamber;

[0005] The vibration cleaning unit includes multiple vibration components, and the vibration end of each vibration component abuts against the cavity wall of the reaction chamber.

[0006] The cleaning control unit is communicatively connected to the residue detection unit and the vibration cleaning unit. Based on the detection results of the residue detection unit, it controls multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber to remove deposited byproducts deposited on the inner wall of the reaction chamber.

[0007] Optionally, the vibration component includes: a piezoelectric ceramic sheet; and two electrodes, which are located on the same side of the piezoelectric ceramic sheet or on opposite sides of the piezoelectric ceramic sheet, and are respectively connected to a high-frequency signal generator.

[0008] Optionally, the piezoelectric ceramic sheet is bonded to the cavity interlayer or mounting groove of the reaction chamber using an adhesive.

[0009] Optionally, the vibration frequency generated by the piezoelectric ceramic sheet is from 40 kHz to 100 kHz.

[0010] Optionally, the vibration component further includes a vibration transducer connected to the piezoelectric ceramic sheet, the free end of which abuts against the cavity wall of the reaction chamber.

[0011] Optionally, the vibration transducer is made of quartz or ceramic.

[0012] Optionally, the plurality of the vibrating components are arranged in a tubular structure around the reaction chamber; or the plurality of the vibrating components are arranged in a matrix, and at least three matrices are formed.

[0013] Optionally, the number of residue detection units is set to multiple, and the multiple residue detection units are divided into three groups, with the three groups of residue detection units corresponding to the upper, middle and lower parts of the reaction chamber.

[0014] Optionally, the residue detection unit includes an optical interference sensor for detecting changes in the concentration of the deposited byproducts.

[0015] Optionally, the cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier. The host computer sets the vibration frequency and vibration time of each vibrating component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier.

[0016] Optionally, the cleaning control unit is linked with the main control system of the plasma processing equipment.

[0017] Optionally, the residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber; the cleaning system also includes a gas cleaning unit, whose air inlet is located on the wall of the reaction chamber, for inputting cleaning gas into the reaction chamber to remove suspended by-products in the reaction chamber.

[0018] Optionally, the air cleaning unit includes:

[0019] Gas supply source, used to supply clean gas;

[0020] A nozzle, connected to the gas supply source via a gas delivery pipeline, is located on the wall of the reaction chamber and is used to deliver clean gas into the reaction chamber.

[0021] A buffer tank is disposed between the nozzle and the gas delivery pipeline and is used to connect the nozzle and the gas delivery pipeline. The buffer tank is used to regulate the temperature and pressure of the gas.

[0022] To achieve the above objectives, the present invention also provides a method for cleaning a reaction chamber, which uses the aforementioned cleaning system for the reaction chamber to remove deposited byproducts on the inner wall of the reaction chamber, comprising the following steps:

[0023] S1: After the etching process, the residue detection unit detects the concentration of deposited byproducts on the inner wall of the reaction chamber;

[0024] S2: The cleaning control unit controls multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber based on the detection results of the residue detection unit, so as to remove the deposited by-products deposited on the inner wall of the reaction chamber.

[0025] Optionally, the following steps may also be included:

[0026] S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber;

[0027] S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber based on the detection results of the residue detection unit, so as to remove suspended by-products in the reaction chamber.

[0028] The beneficial effects of this invention are as follows:

[0029] The cleaning system of this invention can be used to remove byproducts deposited on the inner wall of the reaction chamber, avoiding the presence of byproducts on the inner wall of the reaction chamber. The structure of this application is reasonably designed, and by working together with vibration cleaning and gas cleaning processes, and with the help of intelligent detection and cleaning control unit, it is ensured that no byproducts remain in the reaction chamber after cleaning. This can effectively avoid the repetition of the cleaning process, improve the product yield, and at the same time, slow down equipment aging and extend the service life of the equipment.

[0030] The cleaning system of this invention significantly improves cleaning efficiency by intelligently identifying and precisely removing contaminants from the etching chamber, greatly reducing the time and resource consumption required by traditional cleaning methods. Simultaneously, this cleaning system effectively extends the maintenance cycle of etching equipment, enhancing overall equipment stability and product yield. Furthermore, it reduces maintenance frequency and labor costs. This invention not only optimizes equipment operating efficiency but also possesses broad applicability, seamlessly integrating into various plasma etching systems to enable system upgrades and provide strong support for the efficient and stable operation of semiconductor manufacturing processes. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of the storage cavity being a sandwich structure in the cleaning system of the reaction chamber used in this invention;

[0032] Figure 2 This is a schematic diagram of the structure of the cleaning system for the reaction chamber of the present invention, in which the storage cavity is a mounting slot;

[0033] Figure 3 This is a schematic diagram of the structure of the vibration cleaning unit in the cleaning system for the reaction chamber of the present invention;

[0034] Figure 4 This is one flowchart of the cleaning method for the reaction chamber according to the present invention;

[0035] Figure 5 This is another flowchart of the cleaning method for the reaction chamber according to the present invention.

[0036] Explanation of reference numerals in the attached figures

[0037] 1. Reaction chamber; 2. Vibrating component; 21. Piezoelectric ceramic sheet; 22. Adhesive component; 23. Vibration transducer; 24. Electrode; 3. Storage chamber; 4. Residue detection unit. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0039] To address the problems existing in the prior art, embodiments of the present invention provide a cleaning system for a reaction chamber. This cleaning system can be used to remove byproducts deposited on the inner wall of the reaction chamber 1, preventing byproduct residue from remaining on the inner wall of the reaction chamber 1. Specifically, a combination of a residue detection unit, a cleaning control unit, and a vibration cleaning unit is added to increase mechanical vibration on the cavity wall of the reaction chamber 1 to remove byproducts deposited on the inner wall of the reaction chamber 1. Simultaneously, a gas cleaning unit is added to remove byproducts suspended in the reaction chamber 1, ensuring the cleanliness of the reaction chamber 1. The structural design of this application is reasonable, using vibration cleaning and gas cleaning processes working in tandem, and with the help of intelligent detection and cleaning control units, ensuring that no byproducts remain in the cleaned reaction chamber 1. This effectively avoids the repetition of the cleaning process, improves product yield, and also slows down equipment aging, extending the service life of the equipment.

[0040] This cleaning system is suitable for cleaning the reaction chambers of plasma processing equipment, including etching equipment, deposition equipment, and resist removal equipment. In this embodiment, the cleaning control unit is also linked to the main control system of the plasma processing equipment.

[0041] In one implementation, such as Figure 1As shown, the cleaning system for the reaction chamber includes a gas cleaning unit, a vibration cleaning unit, a residue detection unit 4, and a cleaning control unit. The residue detection unit 4 is used to detect in real time changes in the concentration of deposited byproducts on the inner wall of the reaction chamber 1 and changes in the concentration of suspended byproducts within the reaction chamber 1. The cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier. The host computer can set the vibration frequency and vibration time of each vibration component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier. The high-frequency signal generator generates a high-frequency electrical signal, which acts on the vibration components of the vibration cleaning unit. The power amplifier amplifies the high-frequency electrical signal, allowing the vibration components of the vibration cleaning unit to receive a higher vibration frequency. As the overall controller of the system, the cleaning control unit can adjust the vibration frequency of the vibration cleaning unit and the gas flow rate and pressure of the gas cleaning unit in real time based on the concentration signal of deposited byproducts collected by the residue detection unit 4, ensuring the automation and intelligence of the cleaning process and achieving efficient and precise cleaning results.

[0042] Specifically, the cleaning control unit controls multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber to remove deposited byproducts deposited on the inner wall of the reaction chamber; the cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber 1 to remove suspended byproducts in the reaction chamber 1, and also remove some loosely adhered deposited byproducts.

[0043] In one example, the air inlet of the gas cleaning unit is located on the wall of the reaction chamber 1. In this example, the gas cleaning unit is an important component of the cleaning system. The gas cleaning unit is designed to introduce clean gas (such as O2 or F-type gas) into the reaction chamber 1 and remove suspended byproducts or loose deposited byproducts from the reaction chamber 1 through the flow of clean gas.

[0044] In one example, the gas cleaning unit includes a gas supply source, a buffer tank, a gas delivery pipeline, and nozzles or jet outlets. The gas supply source provides the gas required for cleaning, such as nitrogen or argon, but is not limited to nitrogen or argon; the buffer tank is used to regulate the temperature and pressure of the gas, ensuring that the gas reaches the required conditions before entering the reaction chamber 1; the gas delivery pipeline transports the gas from the supply source into the reaction chamber 1. It is important to note that the cleaning control unit, as the overall controller of the gas cleaning unit, works collaboratively in the gas cleaning process. Specifically, the cleaning control unit is responsible for precisely controlling the gas flow rate, pressure, and temperature to ensure the consistency and effectiveness of the cleaning process; the nozzles or jet outlets (the opening where the nozzles or jet outlets connect to the reaction chamber 1 is the air inlet) spray the cleaning gas into the reaction chamber 1 at a specific angle and pressure, achieving effective cleaning of the inner wall of the reaction chamber 1 and suspended byproducts. The coordinated operation of the above components ensures that the cleaning gas can be efficiently and evenly distributed into the reaction chamber 1, thereby achieving the ideal cleaning effect and improving the operating efficiency of the equipment and product yield.

[0045] It is worth noting that, depending on the process, the arrangement of the nozzle or jet outlet in the reaction chamber 1 is also different. Specifically, it can be set on the side wall, bottom or top of the reaction chamber 1. Of course, in other examples, it can also be any combination of the above arrangements.

[0046] In one embodiment, the cleaning system further includes a vibration cleaning unit, such as... Figure 1 As shown, the vibration cleaning unit applies uniform and efficient vibration to the cavity wall of reaction chamber 1 using high-frequency vibration technology. This effectively loosens and removes byproducts adhering to the inner wall of reaction chamber 1, significantly improving cleaning efficiency and ensuring the cleanliness of the inner wall of reaction chamber 1, providing a more reliable guarantee for subsequent processes. This vibration method not only reaches hard-to-reach corners but also reduces equipment aging and performance degradation caused by deposit accumulation, extending equipment lifespan and reducing maintenance costs. Furthermore, the coordinated operation of the vibration cleaning unit and the air cleaning unit ensures that byproducts within reaction chamber 1 are completely removed.

[0047] In one example, the vibration cleaning unit includes multiple vibration components, each of which has a vibration end that abuts against the cavity wall of the reaction chamber, such as... Figure 1 As shown, this design aims to ensure that the vibration generated by the vibrating component is directly transmitted to the cavity wall of reaction chamber 1, thereby ensuring that the vibration energy acts on the cavity wall of reaction chamber 1 efficiently and uniformly. Furthermore, this direct contact design not only improves cleaning efficiency but also reduces the loss of vibration energy during transmission, ensuring the stability and reliability of the cleaning process. This provides a cleaner operating environment for subsequent processes, further improving product yield and equipment operating efficiency.

[0048] In one example, such as Figure 1 As shown, a storage cavity 3 is provided on the reaction chamber 1. The storage cavity 3 is used to store the vibrating component. The storage cavity 3 can be a cavity interlayer provided in the cavity wall of the reaction chamber 1. The cavity interlayer is not connected to the inner cavity or the outside of the reaction chamber 1. It can also be a mounting groove. The mounting groove is not connected to the inner cavity of the reaction chamber 1, but it is connected to the outside of the reaction chamber 1. Of course, it is not limited to interlayer and mounting groove.

[0049] When the storage cavity 3 is a cavity interlayer, the advantage of not communicating with the inner cavity and the outside of the reaction cavity 1 is that it can effectively avoid the influence of the high-energy environment inside the reaction cavity 1 and the external environment on the vibrating components inside the cavity interlayer. This prevents external impurities or contaminants from entering the cavity interlayer, and at the same time prevents corrosive gases or other harmful substances inside the reaction cavity 1 from entering the cavity interlayer. This protects the components inside the cavity interlayer, including the vibrating components, and extends the service life of the components.

[0050] Specifically, when storage cavity 3 is a cavity interlayer, such as Figure 1 As shown, the cavity interlayer is set inside the cavity wall of the reaction chamber 1, and the vibration component is set inside the interlayer. The vibration end of the vibration component is in contact with the cavity wall of the interlayer and is set towards the inner cavity of the reaction chamber 1. This design allows the vibration energy to be efficiently transmitted to the cavity wall of the reaction chamber 1 and directly act on the by-products attached to the inner wall of the reaction chamber 1, thereby achieving a more thorough cleaning effect.

[0051] In the actual configuration, reaction chamber 1 has both a rectangular structure and a cylindrical structure.

[0052] In reaction chamber 1, which has a rectangular structure, such as Figure 1 As shown, the reaction chamber 1 has four sides. Except for one side which has a wafer transfer port, the other three sides are provided with cavity interlayers, and each cavity interlayer is provided with a vibrating component. In the cylindrical reaction chamber 1, except for the wafer transfer port, the other sides are provided with cavity interlayers, and each cavity interlayer is provided with a vibrating component.

[0053] In one example, when the storage cavity 3 is a mounting slot, the number of mounting slots is the same as the number of vibrating components, and the mounting slots are connected to the external environment of the reaction cavity 1 but not to the internal cavity of the reaction cavity 1, such as... Figure 2As shown, in this example, the vibrating end of the vibrating component abuts against the side wall of the mounting slot. This arrangement aims to directly transfer high-frequency vibration energy to the cavity wall of reaction chamber 1 while facilitating the installation, maintenance, and heat dissipation of the vibrating component. Specifically, because the mounting slot is connected to the external environment, technicians can more easily access the vibrating component from outside reaction chamber 1 for installation, debugging, replacement, or maintenance operations without entering the interior of reaction chamber 1, thereby improving maintenance efficiency and reducing maintenance costs. Simultaneously, this design allows heat generated by the vibrating component during operation to dissipate through contact with the external environment, preventing heat accumulation from adversely affecting the performance and lifespan of the vibrating component and ensuring it maintains good working condition during long-term operation. Furthermore, the connection to the external environment simplifies the structure of reaction chamber 1, reduces internal complexity, and further improves the reliability and stability of the system.

[0054] In one example, the vibrating component includes a piezoelectric ceramic sheet 21, two electrodes 24 disposed on both sides of the piezoelectric ceramic sheet 21 (in other examples, the two electrodes 24 may also be disposed on the same side of the piezoelectric ceramic sheet 21), an adhesive 22 for fixing the piezoelectric ceramic sheet 21 to the cavity interlayer or mounting groove, and a vibration transmission plate 23 connected to the piezoelectric ceramic sheet 21 and used for transmitting vibration, such as... Figure 3 As shown, when an alternating voltage is applied, the piezoelectric ceramic sheet 21 undergoes microscopic mechanical deformation, i.e., the reverse piezoelectric effect, which manifests as periodic vibration.

[0055] The adhesive 22 can be made of an adhesive, which must be heat-resistant and corrosion-resistant to ensure the stability of the piezoelectric ceramic sheet 21 in high-temperature and corrosive environments. The vibration transmission plate 23 can be made of quartz or ceramic, but is not limited to quartz or ceramic, with ceramic being preferred; because quartz or ceramic has good mechanical properties and chemical stability, it can effectively transmit the vibration generated by the piezoelectric ceramic sheet 21 to the cavity wall of the reaction chamber 1.

[0056] In one example, the free end of the transducer 23 or the end of the piezoelectric ceramic sheet 21 that contacts the cavity wall forms the vibrating end.

[0057] It is worth noting that of the two electrodes 24, one is a positive electrode and the other is a negative electrode.

[0058] In one example, the vibration frequency generated by the piezoelectric ceramic sheet 21 is between 40 kHz and 100 kHz. For example, the vibration frequency can be 40 kHz, 50 kHz, 60 kHz, 70 kHz, 80 kHz, 90 kHz, or 100 kHz, but is not limited to 40 kHz, 50 kHz, 60 kHz, 70 kHz, 80 kHz, 90 kHz, or 100 kHz. The specific vibration frequency can be adjusted according to the thickness of the by-product deposition and the timing of the cleaning process. In this example, setting the vibration frequency of the piezoelectric ceramic sheet 21 between 40 kHz and 100 kHz enables the vibration amplitude to reach the micrometer level, thereby more effectively removing by-products adhering to the inner wall of the reaction chamber 1.

[0059] The reason why vibration amplitudes at the micrometer level can shake away deposited byproducts is that:

[0060] Vibration frequency and energy transmission:

[0061] The vibration frequency range mentioned in this invention is 40kHz to 100kHz. This high-frequency vibration generates high-frequency energy transfer, subjecting the deposited byproducts on the inner wall of the reaction chamber to continuous mechanical impact. Even if the amplitude of a single vibration is very small (micrometer level), the high-frequency vibration causes energy to accumulate and release repeatedly between the deposits and the inner wall of the reaction chamber, gradually weakening the adhesion between the deposits and the inner wall.

[0062] The physical effects of micron-level vibrations:

[0063] Although the amplitude of micron-level vibrations is small, it is sufficient to loosen the internal structure of sedimentary byproducts at the microscopic scale. Sediments are typically porous or layered structures, and micron-level vibrations can create stress concentrations in these microstructures, leading to localized fractures or loosening of the sediment. High-frequency vibrations can induce fatigue effects at the interface between the sediment and the inner wall of the reaction chamber. This fatigue effect gradually weakens the bonding strength of the interface, eventually causing the sediment to detach from the inner wall.

[0064] In one example, the piezoelectric ceramic sheet 21 can be a piezoelectric composite material, which has the characteristics of good flexibility, good impact resistance, and excellent overall performance. Two electrodes 24 are disposed on the piezoelectric composite material.

[0065] Piezoelectric composite materials refer to piezoelectric materials composed of thermoplastic polymers and inorganic piezoelectric materials, also known as composite polymer piezoelectric materials. Their characteristic is that they combine the excellent piezoelectricity of inorganic piezoelectric materials with the excellent processing properties of polymer piezoelectric materials, and they achieve piezoelectricity without stretching or other treatments. This piezoelectricity is anisotropic within the film, thus exhibiting the same piezoelectricity in any direction. Piezoelectric composite materials come in different types, which will be illustrated with examples below.

[0066] For example, type 0-3 piezoelectric composites consist of piezoelectric ceramic particles dispersed in a polymer matrix.

[0067] For example, type 1-3 piezoelectric composites consist of piezoelectric ceramic fibers arranged in one direction and embedded in a polymer matrix.

[0068] Of course, there are other examples, not limited to type 0-3 piezoelectric composites and type 1-3 piezoelectric composites.

[0069] In one example, the number of vibrating components is set to multiple, such as... Figure 1 As shown, for example, it can be set to 10, 20, 30, 40, etc., but is not limited to 10, 20, 30, 40; multiple vibrating components stacked on the same horizontal plane have different configurations.

[0070] In one configuration, multiple vibrating components are arranged in a single layer on the same horizontal plane; in another configuration, at least two layers are arranged on the same horizontal plane. The difference lies in that a single-layer configuration is more suitable for applications with lower requirements for vibration amplitude and bandwidth. Two- or multi-layer configurations are more suitable for applications requiring larger vibration amplitude, wider bandwidth, or special vibration modes, but the cost and technical installation complexity are higher than those of a single-layer configuration. The specific choice can be determined by technical personnel based on the actual application scenario, and will not be elaborated further here.

[0071] Furthermore, the various vibrating components are arranged in different ways, as follows:

[0072] In one arrangement, multiple vibration components are arranged in a matrix. This arrangement is suitable for a reaction chamber 1 with a rectangular structure, and at least three matrices are provided on three sides of the reaction chamber 1. The other side is not equipped with a vibration component due to limited space caused by a wafer transfer port. The vibration components within the matrix are connected in pairs, so that the matrix forms an organic whole, which facilitates subsequent installation and maintenance.

[0073] In another arrangement, multiple vibrating components are arranged in a tubular structure. This arrangement is suitable for the reaction chamber 1, which has a cylindrical structure. In this example arrangement, adjacent vibrating components are connected to each other.

[0074] In one embodiment, the cleaning system includes a residue detection unit 4, such as... Figure 1 As shown, the residue detection unit 4 is located on the inner wall of the reaction chamber 1. The residue detection unit 4 is used to detect the changes in the concentration of deposited by-products on the inner wall of the reaction chamber 1 and the changes in the concentration of suspended by-products in the reaction chamber 1 in real time.

[0075] In one example, the residue detection unit 4 is an optical interferometer sensor. An optical interferometer sensor is a high-precision measuring tool suitable for applications requiring high-precision, non-contact measurement. Its working principle is based on the interference phenomenon of light, measuring the target physical quantity by detecting phase changes or optical path differences in light waves. Optical interferometer sensors are widely used in industry, scientific research, biomedicine, and other fields. Although they have high environmental requirements and are costly, their high precision and high sensitivity make them indispensable in many applications.

[0076] In one example, the residue detection unit 4 is a capacitive sensor; the capacitive sensor identifies byproducts by detecting changes in capacitance. Capacitive sensors have high sensitivity to both non-conductive and conductive media, and can operate reliably even in the presence of byproducts or adhering materials.

[0077] In one example, to ensure a more comprehensive and clean detection of residual byproducts in the reaction chamber 1, the number of residue detection units 4 is set to 9-15. For example, the number can be 9, 10, 12 or 15, but is not limited to 9, 10, 12 or 15, and preferably 12.

[0078] Several residue detection units 4 are divided into three groups and arranged in the upper, middle, and lower parts of the reaction chamber 1, respectively. The upper part can be understood as being close to the inner top wall of the reaction chamber 1, the middle part as being located in the middle of the reaction chamber 1, and the lower part as being close to the inner bottom wall of the reaction chamber 1. The residue detection units 4 in the upper part can detect deposits caused by airflow or volatile residues in a timely manner, the residue detection units 4 in the middle part can effectively detect the residue distribution in the main areas of the inner wall, and the residue detection units 4 in the lower part focus on the residues deposited at the bottom due to gravity. In this example, the multi-point detection strategy can achieve comprehensive coverage of the entire inner wall of the reaction chamber 1, improve the accuracy and reliability of detection, and provide strong support for process optimization and equipment maintenance.

[0079] The number of residue detection units 4 in the three groups can be the same or different. The specific number and arrangement can be selected according to the size of the reaction chamber 1 and the process requirements, which will not be elaborated here.

[0080] In one embodiment, the cleaning control unit includes a high-frequency signal generator, which is located outside the reaction chamber 1, or inside the interlayer or mounting groove; the high-frequency signal generator is used to generate a high-frequency electrical signal, and the generated high-frequency electrical signal is converted into a mechanical vibration signal of the piezoelectric ceramic sheet after acting on the piezoelectric ceramic sheet.

[0081] The high-frequency signal generator is an electronic device capable of generating high-frequency electrical signals within a specific frequency range. In this example, the high-frequency signal generator provides a high-frequency electrical signal to the piezoelectric ceramic sheet 21, driving it to generate high-frequency vibrations, thereby cleaning the deposited byproducts on the inner wall of the reaction chamber 1. This high-frequency vibration effectively loosens and removes deposits and residues adhering to the inner wall, ensuring the cleanliness of the reaction chamber 1 and improving process stability and product yield.

[0082] In one embodiment, the cleaning control unit includes a power amplifier located outside the reaction chamber 1, or inside a sandwich or mounting groove.

[0083] In this example, the power amplifier amplifies the high-frequency electrical signal generated by the high-frequency signal generator to a sufficiently high power to drive the piezoelectric ceramic sheet 21 to generate high-frequency vibration.

[0084] It is worth noting that the vibration component, residue detection unit 4, high-frequency signal generator, and power amplifier are electrically or communicatively connected. The air cleaning unit, residue detection unit 4, and cleaning control unit are electrically or communicatively connected. Therefore, this application includes at least two series circuits.

[0085] To address the problems existing in the prior art, embodiments of the present invention also provide a method for cleaning a reaction chamber, including a process for removing deposited byproducts on the inner wall of the reaction chamber and a process for removing suspended byproducts within the reaction chamber. These two processes can be performed simultaneously or separately, as detailed below:

[0086] The process of removing deposited byproducts from the inner wall of the reaction chamber, such as... Figure 4 As shown, it includes the following steps:

[0087] S1: After the etching process, the residue detection unit detects the concentration of deposited byproducts on the inner wall of the reaction chamber.

[0088] S2: The cleaning control unit controls multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber based on the detection results of the residue detection unit, so as to remove the deposited by-products deposited on the inner wall of the reaction chamber.

[0089] In one example, a first initial value for deposited byproducts is preset, and this initial value is set to 0, meaning there are no deposited byproducts on the inner wall of the reaction chamber. During operation, when the residue detection unit detects no deposited byproducts on the inner wall of the reaction chamber, the vibrating components do not operate. When the residue detection unit detects that the concentration of deposited byproducts on the inner wall of the reaction chamber is greater than 0, the cleaning control unit controls multiple vibrating components in the vibration cleaning unit to operate, thereby removing the deposited byproducts deposited on the inner wall of the reaction chamber. During operation, the residue detection unit can operate intermittently or continuously until all deposited byproducts on the inner wall of the reaction chamber are removed. It is worth noting that some residue detection units within the reaction chamber are used to detect deposited byproducts.

[0090] The process of removing suspended byproducts from the reaction chamber, such as Figure 5 As shown, it includes the following steps:

[0091] S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber;

[0092] S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber based on the detection results of the residue detection unit, so as to remove suspended by-products in the reaction chamber.

[0093] In one example, a second initial value for suspended byproducts is preset, and this second initial value is set to 0, meaning there are no suspended byproducts in the reaction chamber. During operation, the gas cleaning unit does not operate when the residue detection unit detects no deposited byproducts in the reaction chamber. When the residue detection unit detects that the concentration of suspended byproducts in the reaction chamber is greater than 0, the cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber to remove the suspended byproducts. During operation, the residue detection unit can operate intermittently or continuously until all suspended byproducts in the reaction chamber are cleared. It is worth noting that another portion of the residue detection units in the reaction chamber are used to detect suspended byproducts. In one example, for instance, there are nine residue detection units, five of which are used to detect suspended byproducts, and the other four are used to detect deposited byproducts.

[0094] To address the problems existing in the prior art, embodiments of the present invention also provide a controller. The controller is used to execute the cleaning method for the reaction chamber. The purpose of this controller is twofold: First, it enables automation and intelligent operation of the cleaning process. Based on the real-time detection results of the residue detection unit, it precisely adjusts the vibration frequency and time of the vibration cleaning unit, as well as the gas flow rate and pressure of the gas cleaning unit, thereby ensuring consistent and efficient cleaning results. Second, this setup reduces manual intervention, lowering the risk of incomplete cleaning or equipment damage due to human error, while simultaneously improving cleaning efficiency and shortening the cleaning cycle. Furthermore, the controller's linkage with the main control system of the plasma treatment equipment enables seamless integration of the cleaning process and the plasma treatment process, optimizing the overall process flow and further improving equipment operating efficiency and product yield.

[0095] It is worth noting that, in this application, deposited byproducts refer to byproducts deposited on the inner wall of reaction chamber 1. Suspended byproducts refer to byproducts suspended within the reaction chamber.

[0096] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A cleaning system for a reaction chamber, characterized in that, The removal of deposited byproducts on the inner wall of the reaction chamber of a plasma processing device includes: A residue detection unit, located inside the reaction chamber, is used to detect the concentration of by-products deposited on the inner wall of the reaction chamber; The vibration cleaning unit includes multiple vibration components, each of which has a vibration end that abuts against the cavity wall of the reaction chamber. Each vibration component includes a piezoelectric ceramic sheet. The piezoelectric ceramic sheet is bonded to the cavity interlayer or mounting groove of the reaction chamber via an adhesive. The vibration frequency generated by the piezoelectric ceramic sheet ranges from 40kHz to 100kHz. A cleaning control unit, which is communicatively connected to the residue detection unit and the vibration cleaning unit, is used to control multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to the detection results of the residue detection unit, so as to remove the deposited by-products deposited on the inner wall of the reaction chamber. The cleaning system also includes a gas cleaning unit, whose air inlet is located on the wall of the reaction chamber, for introducing cleaning gas into the reaction chamber to remove suspended by-products in the reaction chamber.

2. The cleaning system for the reaction chamber according to claim 1, characterized in that, The vibration component also includes electrodes, and two electrodes are provided. The two electrodes are located on the same side of the piezoelectric ceramic sheet or on opposite sides of the piezoelectric ceramic sheet. The two electrodes are respectively connected to a high-frequency signal generator.

3. The cleaning system for the reaction chamber according to claim 2, characterized in that, The vibration component further includes a vibration transmission plate connected to the piezoelectric ceramic sheet, the free end of which abuts against the cavity wall of the reaction chamber.

4. The cleaning system for a reaction chamber according to claim 3, characterized in that, The vibration transducer is made of quartz or ceramic.

5. The cleaning system for a reaction chamber according to claim 1, characterized in that, The plurality of the vibrating components are arranged in a tubular structure around the reaction chamber; or the plurality of the vibrating components are arranged in a matrix, and at least three matrices are formed.

6. The cleaning system for a reaction chamber according to claim 1, characterized in that, The number of residue detection units is set to multiple, and the multiple residue detection units are divided into three groups. The three groups of residue detection units are respectively located in the upper, middle and lower parts of the reaction chamber.

7. The cleaning system for a reaction chamber according to claim 6, characterized in that, The residue detection unit includes an optical interferometer sensor, which is used to detect changes in the concentration of the deposited byproducts.

8. The cleaning system for a reaction chamber according to claim 1, characterized in that, The cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier. The host computer sets the vibration frequency and vibration time of each vibrating component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier.

9. The cleaning system for a reaction chamber according to claim 8, characterized in that, The cleaning control unit is linked to the main control system of the plasma processing equipment.

10. The cleaning system for a reaction chamber according to claim 1, characterized in that, The residue detection unit is also used to detect the concentration of suspended byproducts in the reaction chamber.

11. The cleaning system for a reaction chamber according to claim 10, characterized in that, The air cleaning unit includes: Gas supply source, used to supply clean gas; A nozzle, connected to the gas supply source via a gas delivery pipeline, is located on the wall of the reaction chamber and is used to deliver clean gas into the reaction chamber. A buffer tank is disposed between the nozzle and the gas delivery pipeline and is used to connect the nozzle and the gas delivery pipeline. The buffer tank is used to regulate the temperature and pressure of the gas.

12. A method for cleaning a reaction chamber, characterized in that, Removing deposited byproducts from the inner wall of a reaction chamber using a cleaning system as described in any one of claims 1 to 11 includes the following steps: S1: After the etching process, the residue detection unit detects the concentration of deposited byproducts on the inner wall of the reaction chamber; S2: The cleaning control unit controls multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber based on the detection results of the residue detection unit, so as to remove the deposited by-products deposited on the inner wall of the reaction chamber.

13. The cleaning method for a reaction chamber according to claim 12, characterized in that, It also includes the following steps: S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber; S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber based on the detection results of the residue detection unit, so as to remove suspended by-products in the reaction chamber.

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