Mask structure, manufacturing method of mask structure and using method of mask structure

Abstract

The invention provides a mask structure, a manufacturing method of the mask structure and a using method of the mask structure, the mask structure is made of monocrystalline silicon, the mask structure comprises a mask structure body and a plurality of openings, and the plurality of openings jointly form a to-be-transferred pattern; the mask structure is provided with a first surface and a second surface which are opposite, the multiple openings penetrate through the first surface and the second surface, the cross section of each opening is trapezoidal, the short edge of each opening is located on the first surface, the long edge of each opening is located on the second surface, and the short edge is used for facing a target workpiece. According to the mask structure provided by the invention, the size precision of the target pattern formed on the target workpiece is relatively high.

Description

Technical Field

[0001] The present application relates to the field of microelectronic processing technology, and in particular to a mask structure, a method for manufacturing the mask structure, and a method for using the mask structure. Background Art

[0002] The mask structure is a plate-like member used for pattern transfer. The mask structure is widely used in microelectronics and optical fields such as screen printing, LCD, LED, OLED, etc.

[0003] The mask structure includes a mask structure body and a plurality of openings provided on the mask structure body, and the plurality of openings together form a pattern to be transferred. Openings can generally be provided on the mask structure body by the following methods: forming a plurality of openings on the mask structure body by mechanical processing methods such as laser cutting or wire cutting. The heat generated during the mechanical processing may cause the mask structure body to deform, resulting in poor opening accuracy; forming a plurality of openings on the mask structure body by etching. The etching process is difficult to accurately control, and double-sided etching may form a plurality of protrusions on the sides of the opening, resulting in poor opening accuracy; forming a plurality of openings on the mask structure body by electroforming. The mask structure formed by electroforming has a smaller thickness and is easily deformed when the mesh is stretched, resulting in poor opening accuracy. In addition, the mask structure is generally made of metal material. During use, the mesh stretching stress may also cause the mask structure body to deform, resulting in poor opening accuracy.

[0004] The opening precision in the mask structure is poor, so that the precision of the pattern to be transferred formed by the multiple openings is poor. As a result, the dimensional precision of the target pattern formed on the target workpiece is poor. Summary of the Invention

[0005] The present application provides a mask structure, a method for manufacturing the mask structure, and a method for using the mask structure. The target pattern formed on the target workpiece using the mask structure provided by the present application has high dimensional accuracy.

[0006] The present application provides a mask structure, which is made of single crystal silicon. The mask structure includes a mask structure body and a plurality of openings, wherein the plurality of openings together form a pattern to be transferred;

[0007] The mask structure has a first surface and a second surface relative to each other, and multiple openings penetrate the first surface and the second surface. The cross-sectional shape of each opening is trapezoidal, the short side of the opening is located on the first surface, the long side of the opening is located on the second surface, and the short side is used to face the target workpiece.

[0008] In a possible embodiment, the mask structure provided by the present application has a first surface and a single crystal silicon <100> The crystal orientation is consistent;

[0009] The short side of the opening and the side of the opening form a first cone angle, and the angle of the first cone angle is greater than 45° and less than 90°.

[0010] In a possible implementation manner, in the mask structure provided by the present application, the thickness of the mask structure body is 20 μm-1000 μm.

[0011] In a possible implementation, in the mask structure provided in the present application, the flatness of the side edges of the opening is less than or equal to 5 μm.

[0012] In a possible embodiment, the mask structure provided by the present application further includes a plurality of first alignment holes, which are evenly spaced along the circumference of the mask structure body and are used for aligning with the target workpiece.

[0013] The present application also provides a method for manufacturing a mask structure, which is used to manufacture the above-mentioned mask structure. The method for manufacturing the mask structure includes:

[0014] forming a mask layer on the third surface and the fourth surface of the master;

[0015] forming a through hole communicating with the master in the mask layer on the third surface;

[0016] Anisotropically etching the master through the through-hole using an anisotropic etching solution to form an opening having a trapezoidal cross-section;

[0017] The mask layer on the third surface and the fourth surface is removed to form a mask structure.

[0018] In one possible implementation, the method for manufacturing the mask structure provided in the present application, wherein forming a through hole communicating with the master on the mask layer on the third surface includes:

[0019] coating a photoresist layer on the mask layer on the third surface;

[0020] Exposing and developing the photoresist layer to form exposed areas to be etched;

[0021] Removing the mask layer in the area to be etched to form a through hole connected to the master;

[0022] The remaining photoresist layer on the mask layer is stripped off.

[0023] In a possible embodiment, in the method for manufacturing the mask structure provided in the present application, the size of the area to be etched and the size of the through hole are the same as the size of the long side of the opening;

[0024] The dimensions of the long side of the opening are:

[0025] L3=L4+2b*coty

[0026] Wherein, L4 is the size of the short side of the opening, b is the thickness of the motherboard, and y is the angle of the first cone angle in the opening.

[0027] In one possible embodiment, the method for manufacturing a mask structure provided in the present application uses an anisotropic etching solution to anisotropically etch a master through a through hole to form an opening with a trapezoidal cross-section and includes:

[0028] The anisotropic etching solution is heated and stirred, wherein the heating temperature is 65°-90°, and the stirring method is magnetic rotation stirring or ultrasonic stirring.

[0029] In one possible embodiment, the method for manufacturing the mask structure provided in the present application, wherein removing the mask layer on the third surface and the fourth surface to form the mask structure includes:

[0030] The mask layer on the third surface and the fourth surface is removed by dry etching or wet etching.

[0031] The present application also provides a method for using the mask structure, including:

[0032] Mounting the mask structure on a carrier platform;

[0033] Disposing the target workpiece toward the second surface of the mask structure so that the target workpiece is parallel to the second surface;

[0034] The emission source is arranged on one side of the first surface of the mask structure.

[0035] In one possible embodiment, the method for using the mask structure provided in the present application includes placing a target workpiece toward the second surface of the mask structure so that the target workpiece is parallel to the second surface and includes:

[0036] The mask structure is aligned with the target workpiece through the first alignment hole on the mask structure.

[0037] In a possible implementation, in the method for using the mask structure provided in the present application, a gap between the target workpiece and the second surface of the mask structure is 0-1000 μm.

[0038] The present application provides a mask structure, a method for manufacturing a mask structure, and a method for using a mask structure. The mask structure is provided with a mask structure body and a plurality of openings, wherein the plurality of openings together form a pattern to be transferred; the cross-sectional shape of each opening is a trapezoid, the long side of the opening is located on the first surface, and the short side of the opening is located on the second surface. During the coating process on the target workpiece, the short side faces the target workpiece, and the particles emitted by the emission source are deposited on the target workpiece after passing through the long side and the short side in sequence. The trapezoidal opening acts as a funnel and does not block the particles emitted by the emission source, so that the size of the target pattern formed on the target workpiece is the same as the size of the pattern to be transferred formed by the short side of the opening, and the dimensional accuracy of the target pattern formed on the target workpiece is high. In addition, the mask structure is made of single crystal silicon, and the mask structure made of single crystal silicon has no ductility. Therefore, when the mask structure is stretched, the mask structure will not be deformed due to the stretching stress, and thus the opening will not be deformed, so that the dimensional accuracy of the opening is high, and thus the dimensional accuracy of the target pattern formed on the target workpiece is also high. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0040] Figure 1 A schematic structural diagram of a mask structure provided in an embodiment of the present application;

[0041] Figure 2 for Figure 1 Cross-sectional view along line AA;

[0042] Figure 3 A diagram showing a usage state of a mask structure provided in an embodiment of the present application;

[0043] Figure 4 The process of the method for manufacturing the mask structure provided in the embodiment of the present application Figure 1 ;

[0044] Figure 5 A schematic structural diagram of a master plate for producing a mask structure provided in an embodiment of the present application;

[0045] Figure 6 for Figure 5 Side view of;

[0046] Figure 7 is a schematic diagram of the structure after a mask layer is formed on a master;

[0047] Figure 8It is a schematic diagram of the structure after forming a through hole communicating with the master on the mask layer of the master;

[0048] Figure 9 Schematic diagram of the structure after the opening is formed on the master;

[0049] Figure 10 The process of the method for manufacturing the mask structure provided in the embodiment of the present application Figure 2 ;

[0050] Figure 11 is a schematic diagram of the structure after photoresist is coated on the mask layer of the master;

[0051] Figure 12 Schematic diagram of the process of exposing and developing the photoresist on the mask layer;

[0052] Figure 13 Schematic diagram of the structure after removing the mask layer in the area to be etched;

[0053] Figure 14 A flowchart of a method for using a mask structure provided in an embodiment of the present application;

[0054] Figure 15 This is a graph showing thickness variation at the edge of a target pattern formed by vacuum coating using the mask structure provided by an embodiment of the present application.

[0055] Description of reference numerals:

[0056] 100-mask structure; 100a-first surface; 100b-second surface;

[0057] 110-mask structure body;

[0058] 120- opening; 121- long side; 122- short side; 123- side;

[0059] 130-first alignment hole;

[0060] 200-target artifact;

[0061] 300-Emission source;

[0062] 400-master; 400a-third surface; 400b-fourth surface;

[0063] 500-mask layer; 510-through hole;

[0064] 600-photoresist layer; 610-area to be etched;

[0065] 700-photolithography mask; 710-light transmission hole;

[0066] 800-UV beam;

[0067] 900-carrying platform;

[0068] α - first cone angle;

[0069] L-length direction;

[0070] W-width direction;

[0071] D-thickness direction;

[0072] L1-first length;

[0073] L2-second length;

[0074] L3-third length;

[0075] L4 - fourth length. DETAILED DESCRIPTION

[0076] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0077] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to a fixed connection, an indirect connection via an intermediate medium, internal communication between two components, or an interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0078] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0079] The terms "first," "second," and "third" (if any) in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the application described herein can, for example, be implemented in orders other than those illustrated or described herein.

[0080] In addition, the terms "comprises" and "having" and any variations thereof are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or service tool that includes a series of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, product or service tool.

[0081] The mask structure is a plate-like member used for pattern transfer. The mask structure is widely used in microelectronics and optical fields such as screen printing, LCD, LED, OLED, etc.

[0082] The mask structure includes a mask structure body and multiple openings arranged on the mask structure body. The multiple openings together form a pattern to be transferred. The pattern to be transferred on the mask structure is transferred to the workpiece to be processed by sputtering, screen printing, etc. For the sake of convenience of description, the workpiece to be processed is called a target workpiece, and the pattern on the target workpiece is called a target pattern.

[0083] Typically, openings can be created in the mask structure body using the following methods: When the opening size is greater than 200 μm, multiple openings can be formed in the mask structure body through mechanical processing methods such as laser cutting or wire cutting. This machining process generates heat, which can cause stress accumulation in the mask structure body, causing deformation of the mask structure body and the openings within it, resulting in poor opening precision. Furthermore, the roughness of the side edges of the openings formed by mechanical processing, which may exceed 15 μm, can also affect the precision of the openings.

[0084] When the opening size is 20μm-200μm, etching multiple openings into the main body of the mask structure is difficult to precisely control. Double-sided etching also creates multiple protrusions on the sides of the openings. These protrusions cast shadows during pattern transfer, affecting pattern uniformity and resolution. Furthermore, the edges of the openings formed by etching are thin, and the stress generated during the stretching process can cause edge warping, further reducing the precision of the openings.

[0085] When the opening size is less than 20 μm, multiple openings are formed on the mask structure body by electroforming. The mask structure formed by electroforming has a small thickness and is easily deformed when the mesh is stretched, resulting in poor opening accuracy.

[0086] In addition, the mask structure in the related art is usually made of metal material. Metal has ductility. During use, the tension stress will also cause the mask structure body to deform, resulting in poor opening accuracy.

[0087] Therefore, in the related art, the opening accuracy in the mask structure is poor, so that the accuracy of the pattern to be transferred formed by the multiple openings is poor, and thus the dimensional accuracy of the target pattern formed on the target workpiece is poor.

[0088] Based on this, the present application provides a mask structure, a method for manufacturing the mask structure, and a method for using the mask structure. The target pattern formed on the target workpiece using the mask structure provided by the present application has high dimensional accuracy.

[0089] Figure 1 A schematic structural diagram of a mask structure provided in an embodiment of the present application; Figure 2 for Figure 1 Sectional view along line AA. Figure 1 and Figure 2 As shown, the mask structure 100 provided in the present application is made of single crystal silicon, and the mask structure 100 includes a mask structure body 110 and a plurality of openings 120, and the plurality of openings 120 together form a pattern to be transferred; the mask structure 100 has a first surface 100a and a second surface 100b relative to each other, and the plurality of openings 120 all penetrate the first surface 100a and the second surface 100b, and the cross-sectional shape of each opening 120 is trapezoidal, and the long side 121 of the opening 120 is located on the first surface 100a, and the short side 122 of the opening 120 is located on the second surface 100b, and the short side 122 is used to face the target workpiece.

[0090] The mask structure 100 is generally a plate-shaped member used for pattern transfer. Figure 1 and Figure 2 In the illustrated embodiment, the length direction of the mask structure 100 is represented by L, the width direction of the mask structure 100 is represented by W, and the thickness direction of the mask structure 100 is represented by D.

[0091] The mask structure body 110 has a plurality of openings 120. The layout of the openings 120 on the mask structure body 110 is configured based on the specific shape and size of the pattern to be transferred. In this embodiment, the plurality of openings 120 extend along the length direction L of the mask structure 100 and are spaced apart along the width direction W of the mask structure 100. The plurality of openings 120 collectively form the pattern to be transferred.

[0092] For ease of description, two opposite surfaces of the mask structure 100 along the thickness direction D are respectively referred to as the first surface 100 a and the second surface 100 b . The openings 120 penetrate the mask structure body 110 along the thickness direction D of the mask structure 100 .

[0093] Next, the specific shape and formation method of the opening 120 will be described.

[0094] Please continue to see Figure 2As shown, the cross-section of the opening 120 is an isosceles trapezoid. The cross-sectional shape of the isosceles trapezoid of the opening 120 is formed by utilizing the anisotropic etching characteristics of single-crystal silicon. Specifically, the mask structure 100 is a plate-shaped member made of a single-crystal silicon wafer, and the alkaline etching solution has different etching rates for different crystal orientations of single-crystal silicon. The etching solution can be one of KOH (potassium hydroxide), TMAH (tetramethylammonium hydroxide), EDP (ethylenediamine), NH2NH2 (hydrazine), NaOH (sodium hydroxide), and CsOH (cesium hydroxide). In this embodiment, KOH is used as the etching solution.

[0095] In this embodiment, the mask structure body 110 is placed in a KOH etching solution, and the KOH etching solution starts etching from the first surface 100a. The etching rate of the etching solution along the width direction W of the mask structure 100 is greater than the etching rate along the thickness direction D of the mask structure 100. Therefore, when the etching solution penetrates the second surface 100b, the size of the opening 120 on the first surface 100a is greater than the size of the opening 120 on the second surface 100b, and the opening 120 with a cross-sectional shape of an isosceles trapezoid is formed on the mask structure body 110.

[0096] The side of the opening 120 on the first surface 100a is called the long side 121, the side of the opening on the second surface 100b is called the short side 122, and the side connecting the long side 121 and the short side 122 is called the side 123. Figure 2 In FIG. 1 , the long side 121 and the short side 122 of the opening 120 are schematically shown by dotted lines.

[0097] The following uses vacuum coating as an example to illustrate the process of pattern transfer using the mask structure 100 .

[0098] Figure 3 This is a diagram showing the usage state of the mask structure provided in the embodiment of the present application. Figure 3 As shown, when the mask structure 100 is used for pattern transfer, the second surface 100 b faces the target workpiece 200 , that is, the short side 122 of the opening 120 faces the target workpiece 200 , and the emission source 300 is on one side of the first surface 100 a .

[0099] During the coating process on the target workpiece 200, particles emitted by the emission source 300 sequentially pass through the long side 121 and the short side 122 before being deposited on the target workpiece 200. It should be noted that the size of the pattern formed on the target workpiece 200 is the same as the size of the short side 122. Because the size of the emission source 300 is unlikely to be exactly the same as that of the mask structure 100, the emission source 300 does not directly face every opening 120; instead, there is an angle between the emission source 300 and most openings 120.

[0100] Since the cross-section of the opening 120 is trapezoidal, and the long side 121 faces the emission source 300, at the opening 120 that is not completely aligned with the emission source 300, the trapezoidal opening 120 acts as a funnel and does not block the particles emitted by the emission source 300, so that the size of the target pattern formed on the target workpiece 200 is the same as the size of the pattern to be transferred formed by the short side 122 of the opening 120, and the size accuracy of the target pattern formed on the target workpiece 200 is high.

[0101] In addition, the mask structure 100 is made of single crystal silicon, and the mask structure 100 made of single crystal silicon has no ductility. Therefore, when using the mask structure 100 for coating, there is no need to stretch the mesh. The mask structure 100 will not be deformed due to the stretching stress, and the opening 120 will not be deformed, so that the dimensional accuracy of the opening 120 is higher, and the accuracy of the pattern to be transferred formed by multiple openings 120 is higher. Therefore, the dimensional accuracy of the target pattern formed on the target workpiece 200 is also higher.

[0102] The mask structure 100 provided in the present application is provided with a mask structure body 110 and a plurality of openings 120, and the plurality of openings 120 together form a pattern to be transferred; the cross-sectional shape of each opening 120 is a trapezoid, the long side 121 of the opening 120 is located on the first surface 100a, and the short side 122 of the opening 120 is located on the second surface 100b. In the process of coating the target workpiece 200, the short side 122 faces the target workpiece 200, and the particles emitted by the emission source 300 are deposited on the target workpiece 200 after passing through the long side 121 and the short side 122 in sequence. The trapezoidal opening 120 acts as a funnel and will not block the particles emitted by the emission source 300, so that the size of the target pattern formed on the target workpiece 200 is the same as the size of the pattern to be transferred formed by the short side 122 of the opening 120, and the size accuracy of the target pattern formed on the target workpiece 200 is high. In addition, the mask structure 100 is made of single crystal silicon, and the mask structure 100 made of single crystal silicon has no ductility. Therefore, when the mask structure 100 is stretched, the mask structure 100 will not be deformed due to the stretching stress, and thus, the opening 120 will not be deformed, so that the dimensional accuracy of the opening 120 is higher, and thus, the dimensional accuracy of the target pattern formed on the target workpiece 200 is also higher.

[0103] Please continue to see Figure 2 As shown, the first surface 100a and the single crystal silicon <100> the short side 122 of the opening 120 and the side 123 of the opening 120 form a first cone angle α, and the first cone angle α is greater than 45° and less than 90°.

[0104] Specifically, the mask structure 100 is usually processed using a single crystal silicon wafer as the raw material. Commonly used single crystal silicon wafers include <100> Crystal orientation, <110> Crystal orientation and <111> Crystal direction. KOH solution has different corrosion rates on different crystal directions. <111> The etching rate of the crystal direction is the smallest. <100> Crystal orientation can be <111> The crystal directions form an acute angle. <110> Crystal orientation can be <111> The crystal directions form a right angle.

[0105] Therefore, in this embodiment, the <100> The mask structure 100 is made of single crystal silicon with a crystal orientation, and the mask structure body 110 is etched in a KOH solution. <111> A first taper angle α is formed between the side edge 123 formed by the crystal orientation and the first surface 100 a (or the second surface 100 b ).

[0106] The angle of the first cone angle α can vary between 45° and 90° depending on the concentration of the etching solution, the temperature during the etching process, and the etching time. In this embodiment, the concentration of the etching solution is 32%, the temperature of the etching solution during the etching process is 85°C, the etching time is 240 minutes, and the angle of the first cone angle α obtained by etching is 54.7°.

[0107] Please continue to see Figure 2 As shown, the thickness of the mask structure body 110 is 20 μm-1000 μm.

[0108] Commonly used single crystal silicon wafers have thicknesses ranging from 20 μm to 1000 μm. For example, the thickness of single crystal silicon wafers can be 100 μm, 200 μm, 279 μm, 300 μm, 400 μm, 500 μm, 525 μm, 600 μm, 675 μm, 700 μm, 725 μm, 775 μm, 1000 μm, and so on. The thinner the single crystal silicon wafer, the higher the cost. In this embodiment, if the thickness of the single crystal silicon wafer is less than 20 μm, the strength of the mask structure 100 will be reduced. If the thickness of the single crystal silicon wafer is greater than 1000 μm, the etching time will be increased, reducing production efficiency. Therefore, a single crystal silicon wafer with a thickness between 20 μm and 1000 μm is typically selected to fabricate the mask structure 100.

[0109] In this embodiment, the flatness of the side edge 123 of the opening 120 is less than or equal to 5 μm.

[0110] The surface flatness obtained by anisotropic etching of single crystal silicon is relatively low, so the side 123 is relatively smooth, and the protrusions on the side 123 produce less obstruction during pattern transfer, resulting in higher dimensional accuracy of the target pattern on the target workpiece.

[0111] Please continue to see Figure 1As shown, the mask structure 100 further includes a plurality of first alignment holes 130 . The first alignment holes 130 are evenly spaced along the circumference of the mask structure body 110 . The first alignment holes 130 are used for aligning with the target workpiece 200 .

[0112] Specifically, the first alignment holes 130 are evenly spaced along the periphery of the mask structure body 110, thereby avoiding the area where the pattern to be transferred is to be transferred and achieving better alignment. The shape of the first alignment holes 130 can be any one of circular, rectangular, triangular, and cross shapes.

[0113] The target workpiece 200 also has second alignment holes (not shown) arranged in a one-to-one correspondence with the first alignment holes 130. By aligning the first alignment holes 130 with the second alignment holes, the mask structure 100 and the target workpiece 200 can be aligned.

[0114] Figure 4 The process of the method for manufacturing the mask structure provided in the embodiment of the present application Figure 1 See also Figure 4 As shown, the present application also provides a method for manufacturing a mask structure, which is used to manufacture the mask structure 100 provided in the above embodiment. The specific structure of the mask structure 100 has been described in detail in the above embodiment and will not be repeated here.

[0115] The method for manufacturing the mask structure includes:

[0116] S101 , forming a mask layer 500 on the third surface 400 a and the fourth surface 400 b of the master 400 .

[0117] Specifically, Figure 5 A schematic structural diagram of a master plate for producing a mask structure provided in an embodiment of the present application; Figure 6 for Figure 5 Side view of . Figure 5 and Figure 6 As shown, the single crystal silicon wafer used to make the mask structure 100 is referred to as a master 400. The master 400 has a flat third surface 400a and a flat fourth surface 400b. It should be noted that the third surface 400a of the master 400 is the first surface 100a of the mask structure 100, and the fourth surface 400b of the master 400 is the second surface 100b of the mask structure 100. The distinction between the third surface 400a and the first surface 100a and the distinction between the fourth surface 400b and the second surface 100b is only for ease of description.

[0118] Figure 7 Schematic diagram of the structure after the mask layer is formed on the master. Figure 7As shown, a mask layer 500 is formed on both the third surface 400a and the fourth surface 400b of the master 400. The mask layer 500 can be formed of silicon dioxide, silicon nitride, silicon carbide, or a metal layer selected from Au, Ag, and Cr.

[0119] The mask layer 500 can be deposited on the third surface 400a and the fourth surface 400b using plasma-enhanced chemical vapor deposition (PECVD). PECVD utilizes microwaves or radio frequency to ionize a gas containing thin film component atoms, forming a localized plasma, thereby depositing the mask layer 500 on the master 400. The mask layer 500 formed using PECVD offers advantages such as a fast deposition rate, high film quality, a low number of pinholes, and a low risk of cracking, facilitating subsequent processing. The thickness of the mask layer 500 is typically less than or equal to 500 μm.

[0120] S102 , forming a through hole 510 in communication with the master 400 on the mask layer 500 on the third surface 400 a .

[0121] Specifically, Figure 8 This is a schematic diagram of the structure after forming a through hole connected to the master on the mask layer of the master. Figure 8 As shown, according to the specific shape of the pattern to be transferred, part of the mask layer 500 on the third surface 400a is removed, and these areas after the mask layer 500 is removed form through holes 510 connected to the third surface 400a of the master 400. Figure 8 In FIG, the through hole 510 is schematically shown by a dotted line.

[0122] S103 , anisotropically etching the motherboard 400 through the through-hole 510 using an etching solution to form an opening 120 with a trapezoidal cross-section.

[0123] Specifically, Figure 9 This is a schematic diagram of the structure after the opening is formed on the motherboard. Figure 9 As shown, the motherboard 400 in the through hole 510 area is anisotropically etched using an etching solution. The etching solution can be one of KOH, TMAH (tetramethylammonium hydroxide), EDP (ethylenediamine), hydrazine, sodium hydroxide, and cesium hydroxide. In this embodiment, KOH is used as the etching solution. When the KOH concentration is too high, the etching rate is high, but the surface formed after etching is also relatively rough; when the KOH concentration is too low, the etching rate is too slow, affecting processing efficiency. Therefore, the weight percentage of the KOH solution is generally selected between 10% and 50%.

[0124] It should be noted that the size of the through hole 510 is consistent with the size of the long side of the opening 120 .

[0125] S104 , removing the mask layer 500 on the third surface 400 a and the fourth surface 400 b to form the mask structure 100 .

[0126] After peeling off the remaining mask layer on the third surface 400 a and the mask layer 500 on the fourth surface 400 b , the mask structure 100 provided in the embodiment of the present application can be obtained.

[0127] Next, a specific process of forming the through hole 510 on the third surface 400 a communicating with the master substrate 400 will be described.

[0128] Figure 10 The process of the method for manufacturing the mask structure provided in the embodiment of the present application Figure 2 ; Figure 11 is a schematic diagram of the structure after photoresist is coated on the mask layer of the master; Figure 12 Schematic diagram of the process of exposing and developing the photoresist on the mask layer; Figure 13 Schematic diagram of the structure after removing the mask layer in the area to be etched. Figures 10 to 13 As shown, forming a through hole communicating with the master on the mask layer 500 on the third surface 400a includes:

[0129] S1021, coating a photoresist layer 600 on the mask layer 500 on the third surface 400a;

[0130] For details, please refer to Figure 11 As shown, a photoresist layer 600 is uniformly coated on the mask layer 500 on the third surface 400 a of the master 400 .

[0131] S1022, exposing and developing the photoresist layer 600 to expose the area to be etched 610;

[0132] For details, please refer to Figure 12 As shown, a photolithography mask 700 is disposed on one side of the third surface 400 a , wherein the photolithography mask 700 has a light-transmitting hole 710 , and the size of the light-transmitting hole 710 is the same as the size of the long side of the opening 120 .

[0133] The ultraviolet light beam 800 passes through the light-transmitting hole 710 to expose and develop the photoresist, exposing the area to be etched 610 in the photoresist layer 600. Figure 12 In FIG, the light-transmitting hole 710 and the area to be etched 610 are schematically shown by dotted lines.

[0134] S1023 , removing the mask layer 500 in the area to be etched 610 to form a through hole 510 communicating with the motherboard 400 .

[0135] For details, please refer to Figure 13As shown, the mask layer 500 at a position corresponding to the to-be-etched area 610 is removed by chemical etching, and a through hole 510 communicating with the motherboard 400 can be formed on the mask layer 500 .

[0136] S1024 , stripping off the remaining photoresist layer 600 on the mask layer 500 .

[0137] The photoresist layer 600 is dissolved by a photoresist stripping solution to remove the remaining photoresist layer 600 .

[0138] Thus, the formation Figure 8 The motherboard 400 shown in FIG. 4 has a mask layer 500 on both the third surface 400a and the fourth surface 400b, wherein the mask layer 500 on the third surface 400a has a through hole 510 connected to the motherboard 400. Figure 9 The opening 120 is shown in FIG.

[0139] Please continue to see Figure 9 and Figure 13 As shown, the size of the area to be etched 610 is the same as the size of the through hole 510 and is the same as the long side of the opening; the length of the long side of the opening is:

[0140] L3=L4+2b*coty

[0141] Wherein, L4 is the size of the short side 122 of the opening 120 , b is the thickness of the motherboard 400 , and y is the angle of the first cone angle α.

[0142] Specifically, the length of the area to be etched 610 is used to schematically illustrate the size of the area to be etched, referred to as the first length L1; the length of the through hole 510 is used to schematically illustrate the size of the through hole 510, referred to as the second length L2; the length of the long side 121 is used to schematically illustrate the size of the long side 121, referred to as the third length L3; and the length of the short side 122 is used to schematically illustrate the size of the short side 122, referred to as the fourth length L4. The first length L1 and the second length L2 are all the same as the third length L3.

[0143] The fourth length L4 is the size of the pattern to be transferred, that is, the size of the target pattern. The size of the target pattern is a known value. The thickness b of the master 400 is the thickness of the single crystal silicon wafer. The first taper angle α can be estimated based on the composition of the etching solution and the etching time. The cross-section of the opening 120 is an isosceles trapezoid. Therefore, the third length L3 of the long side 121 of the opening 120 can be calculated as follows:

[0144] L3=L4+2b*coty

[0145] The first length L1 and the second length L2 are all the same as the third length L3 , thereby obtaining the sizes of the to-be-etched area 610 and the through hole 510 .

[0146] Therefore, the size of the area to be etched 610 can be accurately calculated based on the size of the target pattern, so that the size accuracy of the opening 120 is high, and the size accuracy of the pattern to be transferred formed by the opening 120 is high. Therefore, the target pattern formed on the target workpiece 200 also has high size accuracy.

[0147] In order to increase the etching rate, anisotropic etching solution is used to pass through the through hole 510 to anisotropically etch the motherboard 400 to form an opening 120 with a trapezoidal cross-section. The process also includes: heating and stirring the anisotropic etching solution, wherein the heating temperature is 65°-90°, and the stirring method is magnetic rotation stirring or ultrasonic stirring.

[0148] Heating the KOH solution can increase the anisotropic etching rate, but if the heating temperature is too high, the etching rate will be too high, making the etched surface rougher. Therefore, the temperature during the etching process is kept within the range of 65°-90°. During the etching process, using magnetic rotation stirring or ultrasonic stirring to stir the KOH solution can make the KOH more uniform, making the etching rate more uniform throughout the entire process.

[0149] After the etching is completed, the mask layer 500 on the third surface 400 a and the fourth surface 400 b of the master 400 needs to be removed.

[0150] In this embodiment, removing the mask layer 500 on the third surface 400 a and the fourth surface 400 b to form the mask structure 100 includes removing the mask layer on the third surface 400 a and the fourth surface 400 b by dry etching or wet etching.

[0151] Wet etching involves stripping the mask layer 500 through a chemical reaction between the etching solution and the mask layer 500. Dry etching involves using plasma as the etchant, which reacts with the mask layer to form volatile substances, or by directly bombarding the mask layer 500 with the plasma, thereby stripping the mask layer. Either dry etching or wet etching can be selected to remove the mask layer on the third surface 400a and the fourth surface 400b based on actual process requirements.

[0152] Figure 14 Flowchart of the method for using the mask structure provided in the embodiment of the present application. Figure 14 As shown, the present application also provides a method for using the mask structure, including:

[0153] S201, mounting the mask structure 100 on the carrier platform 900;

[0154] The carrier platform 900 is used to install the mask structure 100 . The mask structure 100 can be installed on the carrier platform 900 by fasteners. The mask structure 100 can also be clamped on the carrier platform 900 .

[0155] S202 , placing the target workpiece 200 toward the second surface 100 b of the mask structure 100 , such that the target workpiece 200 is parallel to the second surface 100 b ;

[0156] The target workpiece 200 is also fixed by the carrier 900. The target workpiece 200 can be mounted on the carrier 900 by fasteners. The target workpiece 200 can also be clamped on the carrier 900. Figure 3 As shown, the target workpiece 200 needs to be disposed on one side of the second surface 100 b and the target workpiece 200 needs to remain parallel to the mask structure 100 , thereby ensuring that the target pattern on the target workpiece 200 and the size of the pattern to be transferred formed by the short side 122 of the opening 120 are consistent.

[0157] S203 , disposing the emission source 300 on one side of the first surface 100 a of the mask structure 100 .

[0158] The particles emitted by the emission source 300 sequentially pass through the long side 121 and the short side 122 and are deposited on the target workpiece 200 to form a target pattern on the target workpiece 200 .

[0159] In this embodiment, the target workpiece 200 is disposed toward the second surface 100 b of the mask structure 100 so that the target workpiece 200 is parallel to the second surface 100 b , and the method also includes aligning the mask structure 100 and the target workpiece 200 through the first alignment hole 130 on the mask structure 100 .

[0160] The target workpiece 200 also has second alignment holes corresponding to the first alignment holes 130. By aligning the first alignment holes 130 with the second alignment holes, the mask structure 100 and the target workpiece 200 can be aligned.

[0161] In other embodiments, the target workpiece 200 and the mask structure 100 may be aligned by other alignment methods.

[0162] In this embodiment, the gap between the target workpiece 200 and the second surface 100 b of the mask structure 100 is 0-1000 μm.

[0163] When the mask structure 100 is used for screen printing, the target workpiece 200 can be placed in close proximity to the second surface 100b. When the mask structure 100 is used for vacuum coating, a certain gap can be left between the target workpiece 200 and the second surface 100b. If this gap is too large, the target pattern will be larger than the pattern to be transferred due to projection effects. Therefore, this gap is typically 1000 μm or less.

[0164] It should be noted that the number of points for measuring the gap must be greater than or equal to three, and the three adjacent points cannot be located on the same straight line in order to ensure that the measured gap is accurate.

[0165] Figure 15 The thickness variation curve at the edge of the target pattern formed by vacuum coating using the mask structure provided by the embodiment of the present application is shown in FIG. Figure 15 In the figure, the horizontal axis represents the edge area width of the target pattern on the target workpiece 200, in μm, wherein the difference between the dotted line x1 and the dotted line x2 is the edge area width of the target pattern; the vertical axis represents the thickness of the target pattern on the target workpiece 200, in nm. It can be seen that the edge area width of the target pattern is approximately 2.4 μm, the width value of the edge area is small, and the target pattern has a higher resolution.

[0166] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A mask structure, characterized in that: The mask structure is made of single crystal silicon, and the mask structure includes a mask structure body and a plurality of openings, wherein the plurality of openings together form a pattern to be transferred; The mask structure has a first surface and a second surface relative to each other, and the multiple openings penetrate the first surface and the second surface. The cross-sectional shape of each opening is trapezoidal, the short side of the opening is located on the first surface, and the long side of the opening is located on the second surface, and the short side is used to face the target workpiece.

2. The mask structure according to claim 1, wherein: The first surface and the single crystal silicon <100> The crystal orientation is consistent; The short side of the opening and the side of the opening form a first cone angle, and the angle of the first cone angle is greater than 45° and less than 90°.

3. The mask structure according to claim 1, wherein: The thickness of the mask structure body is 20 μm-1000 μm.

4. The mask structure according to claim 1, wherein: The flatness of the side of the opening is less than or equal to 5 μm.

5. The mask structure according to any one of claims 1 to 4, characterized in that: The mask structure further includes a plurality of first alignment holes, which are evenly spaced along the circumference of the mask structure body and are used for aligning with a target workpiece.

6. A method for manufacturing a mask structure, characterized in that: Used to manufacture the mask structure according to any one of claims 1 to 5, the method for manufacturing the mask structure comprising: forming a mask layer on the third surface and the fourth surface of the master; forming a through hole communicating with the master on the mask layer on the third surface; Anisotropically etching the master through the through-hole using an anisotropic etching solution to form an opening with a trapezoidal cross-section; The mask layer on the third surface and the fourth surface is removed to form the mask structure.

7. The method for manufacturing a mask structure according to claim 6, wherein: The step of forming a through hole communicating with the master on the mask layer on the third surface comprises: coating a photoresist layer on the mask layer on the third surface; exposing and developing the photoresist layer to expose the area to be etched; Removing the mask layer in the area to be etched to form a through hole communicating with the master; The remaining photoresist layer on the mask layer is stripped off.

8. The method for manufacturing a mask structure according to claim 7, wherein: The size of the area to be etched and the size of the through hole are the same as the size of the long side of the opening; The dimensions of the long side of the opening are: L3=L4+2b*coty Wherein, L4 is the size of the short side of the opening, b is the thickness of the master, and y is the angle of the first cone angle in the opening.

9. The method for manufacturing a mask structure according to claim 6, wherein: The step of anisotropically etching the master through the through hole using an anisotropic etching solution to form an opening with a trapezoidal cross section also includes: The anisotropic etching solution is heated and stirred, wherein the heating temperature is 65°-90°, and the stirring method is magnetic rotation stirring or ultrasonic stirring.

10. The method for manufacturing a mask structure according to claim 6, wherein: The removing the mask layer on the third surface and the fourth surface to form the mask structure includes: The mask layers on the third surface and the fourth surface are removed by dry etching or wet etching.

11. A method for using a mask structure, characterized in that: include: Mounting the mask structure on a carrier platform; placing a target workpiece toward the second surface of the mask structure so that the target workpiece is parallel to the second surface; The emission source is arranged on one side of the first surface of the mask structure.

12. The method for using the mask structure according to claim 11, wherein: The step of arranging the target workpiece toward the second surface of the mask structure so that the target workpiece is parallel to the second surface also includes: The mask structure is aligned with the target workpiece through a first alignment hole on the mask structure.

13. The method for using the mask structure according to claim 11, wherein: The gap between the target workpiece and the second surface of the mask structure is 0-1000 μm.

Images