Thin film deposition equipment, cleaning method of process chamber and storage medium

Abstract

The invention provides thin film deposition equipment, a cleaning method of a process chamber and a storage medium. The thin film deposition equipment comprises a process chamber which is used for bearing a semiconductor device to be processed and carrying out a thin film deposition process on the semiconductor device; the remote plasma system is at least used for providing remote plasma for cleaning the process chamber for the process chamber in which the thin film deposition process is completed; the control system comprises a sensor and a controller, the sensor is located at an outlet, connected with the process chamber, of the remote plasma system, and the controller is connected with the sensor so as to obtain an optical signal of remote plasma input into the process chamber; and the operation power of the remote plasma system is adjusted according to the optical signal, so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a thin film deposition device, a method for cleaning a process chamber, and a computer-readable storage medium. Background Art

[0002] In semiconductor thin film deposition equipment, a remote plasma source is usually used to generate plasma active species. The active species generated in the remote plasma source are transported into the process chamber through a pipeline connected to the process chamber, and react with the thin film deposited on the chamber wall or components to clean the wall and components.

[0003] During the cleaning of process chamber walls, it is generally necessary to maintain a stable cleaning rate to achieve a complete cleaning effect while preventing damage to the chamber's inner walls. However, a common problem with this cleaning process is that the output of the remote plasma source can easily fluctuate due to factors such as the remote plasma source's discharge chamber state, gas flow rate, discharge power, and downstream process chamber pressure. This can result in incomplete cleaning or damage to the chamber's inner walls.

[0004] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for a process chamber cleaning technology for controlling the operating power of the remote plasma source to improve the stability and consistency of the process chamber cleaning efficiency. Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a thin film deposition device, a method for cleaning a process chamber, and a computer-readable storage medium for controlling the operating power of the remote plasma source to improve the stability and consistency of the cleaning efficiency of the process chamber.

[0007] Specifically, the thin film deposition equipment provided according to the first aspect of the present invention includes: a process chamber for carrying a semiconductor device to be processed and performing a thin film deposition process on it; a remote plasma system, at least for providing remote plasma for cleaning the process chamber to complete the thin film deposition process; and a control system, including a sensor and a controller, wherein the sensor is located at the outlet of the remote plasma system connected to the process chamber, and the controller is connected to the sensor to obtain an optical signal of the remote plasma input into the process chamber, and adjusts the operating power of the remote plasma system according to the optical signal, so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

[0008] Furthermore, in some embodiments of the present invention, the sensor includes a spectrometer, and a first observation window is provided at the outlet of the remote plasma system connected to the process chamber. The spectrometer collects the emission spectrum of the remote plasma through the first observation window to characterize the actual cleaning rate of the remote plasma, wherein the emission spectrum includes a characteristic spectral line of at least one active substance, or

[0009] The sensor includes a spectrometer. A second observation window and a third observation window are provided opposite to each other at an outlet of the remote plasma system connected to the process chamber. The second observation window is connected to a light source. The spectrometer collects an absorption spectrum or a laser-induced fluorescence spectrum of the remote plasma through the third observation window to characterize an actual cleaning rate of the remote plasma. The absorption spectrum or the laser-induced fluorescence spectrum includes a characteristic spectral line of at least one active substance.

[0010] Furthermore, in some embodiments of the present invention, the active substance is selected from at least one of Ar-I, FI, Ar-II, and N2(2+).

[0011] Furthermore, in some embodiments of the present invention, the controller is configured to: operate the remote plasma system after the thin film deposition process is completed in the process chamber, and collect a measured spectrum of the remote plasma at its outlet, wherein the measured spectrum is selected from the emission spectrum, the absorption spectrum or the laser-induced fluorescence spectrum; and compare the measured spectrum with the standard spectrum corresponding to the standard cleaning rate, and adjust the operating power of the remote plasma system to reduce the difference between the two.

[0012] Furthermore, in some embodiments of the present invention, the step of comparing the measured spectrum with the standard spectrum corresponding to the standard cleaning rate and adjusting the operating power of the remote plasma system to reduce the difference between the two includes: parsing the measured spectrum to determine the measured radiation intensity at the characteristic spectrum line of at least one of the active substances; consulting the standard spectrum to determine its standard radiation intensity at the characteristic spectrum line; calculating the difference between the standard radiation intensity and the measured radiation intensity, and substituting it into a pre-constructed database to determine the adjustment amount for the operating power, wherein the database stores the correspondence between the radiation intensity of at least one of the active substances at its characteristic spectrum line and the operating power of the remote plasma system; and changing the operating power of the remote plasma system according to the adjustment amount so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

[0013] Furthermore, in some embodiments of the present invention, the step of calibrating the standard spectrum includes: after the thin film deposition process is completed in the process chamber, detecting the surface of the process chamber to determine the first film thickness; operating the remote plasma system at a preset calibrated power, and collecting a calibrated spectrum of the remote plasma at its outlet; in response to the operating time of the remote plasma system reaching a preset time window, shutting down the remote plasma system, and detecting the surface of the process chamber to determine the second film thickness; and determining the corresponding calibrated cleaning rate based on the difference between the first film thickness and the second film thickness, and the time window, and determining the calibrated spectrum as the standard spectrum corresponding to the calibrated cleaning rate.

[0014] Furthermore, in some embodiments of the present invention, the step of constructing the database includes: adjusting the calibration power multiple times to obtain the corresponding calibration spectra respectively; analyzing each of the calibration spectra to respectively determine the radiation intensity at the characteristic spectral line of at least one of the active substances; and fitting the correspondence between the radiation intensity at the characteristic spectral line of each of the active substances and the corresponding calibration power to construct the database.

[0015] Furthermore, in some embodiments of the present invention, the sensor includes a photoelectric sensor, and a second observation window and a third observation window are provided at an outlet of the remote plasma system connected to the process chamber. The second observation window is connected to a laser light source, and the photoelectric sensor collects a laser interference signal or a laser Thomson scattering signal of at least one active substance in the remote plasma through the third observation window to characterize the actual cleaning rate of the remote plasma.

[0016] In addition, the cleaning method of the process chamber provided according to the second aspect of the present invention includes the following steps: after the thin film deposition process is completed in the process chamber, operating a remote plasma system to provide remote plasma to the process chamber; collecting an optical signal of the remote plasma input into the process chamber from an outlet of the remote plasma system connected to the process chamber; and adjusting the operating power of the remote plasma system based on the optical signal so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

[0017] Furthermore, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions, which, when executed by a processor, implement the method for cleaning a process chamber according to the second aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a thin film deposition device provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A schematic structural diagram of a remote plasma source provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A schematic flow chart of controller execution steps according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic diagram of a process for adjusting the operating power of the remote plasma system according to some embodiments of the present invention is shown.

[0023] Reference numerals:

[0024] 10 Remote Plasma System

[0025] 11 Plasma Generator

[0026] 111 Reaction Chamber

[0027] 112 discharge electrode

[0028] 113 Power Supply

[0029] 114 housing

[0030] 12 Output pipeline

[0031] 13 Optical detection pipeline

[0032] 131 First Observation Window

[0033] 20 Spectrometer

[0034] 201 Fiber Optic

[0035] 202 signal line

[0036] 30 process chambers DETAILED DESCRIPTION

[0037] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0038] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0039] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0040] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0041] In semiconductor thin film deposition equipment, a remote plasma source is usually used to generate plasma active species. The active species generated in the remote plasma source are transported into the process chamber through a pipeline connected to the process chamber, and react with the thin film deposited on the chamber wall or components to clean the wall and components.

[0042] During the cleaning of process chamber walls, it is generally necessary to maintain a stable cleaning rate to achieve a complete cleaning effect while preventing damage to the chamber's inner walls. However, a common problem with this cleaning process is that the output of the remote plasma source can easily fluctuate due to factors such as the remote plasma source's discharge chamber state, gas flow rate, discharge power, and downstream process chamber pressure. This can result in incomplete cleaning or damage to the chamber's inner walls.

[0043] In order to overcome the above-mentioned defects of the prior art, the present invention provides a method for cleaning a process chamber, a remote plasma source, a thin film deposition device, and a computer-readable storage medium for controlling the operating power of the remote plasma source to improve the stability and consistency of the process chamber cleaning efficiency.

[0044] In some non-limiting embodiments, the process chamber cleaning method provided in the second aspect of the present invention can be implemented based on the thin film deposition apparatus provided in the first aspect of the present invention. Specifically, the thin film deposition apparatus is configured with a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect of the present invention, having computer instructions stored thereon. The processor is connected to the memory and configured to execute the computer instructions stored in the memory to perform the process chamber cleaning method described in the second aspect of the present invention.

[0045] Please refer to Figures 1 and 2 , Figure 1 A schematic structural diagram of a thin film deposition device provided according to some embodiments of the present invention is shown. Figure 2 A schematic structural diagram of a remote plasma source provided according to some embodiments of the present invention is shown.

[0046] like Figures 1 and 2As shown, the thin film deposition equipment includes a process chamber 30, a remote plasma system 10 and a control system. The process chamber 30 is used to carry the semiconductor device to be processed and perform a thin film deposition process on it. The remote plasma system 10 is at least used to provide remote plasma for cleaning the process chamber 30 to the process chamber 30 that completes the thin film deposition process. The control system includes a sensor and a controller. The sensor is located at the outlet of the remote plasma system 10 connected to the process chamber 30, and the controller is connected to the sensor to obtain the optical signal of the remote plasma input into the process chamber 30, and adjust the operating power of the remote plasma system 10 according to the optical signal, so that the remote plasma cleans the process chamber 30 at a constant speed according to a preset standard cleaning rate. Here, the thin film deposition equipment is used to control the operating power of the remote plasma source to improve the stability and consistency of the cleaning efficiency of the process chamber 30.

[0047] Furthermore, the remote plasma system 10 includes a plasma generator 11 , an output pipeline 12 and an optical detection pipeline 13 .

[0048] The plasma generator 11 is used to ignite plasma and control the operation of the remote plasma system 10 to perform the cleaning method of the process chamber 30. Here, the plasma generator 11 includes a reaction chamber 111, a discharge electrode 112, a power supply 113, a controller and a housing 114.

[0049] The output pipeline 12 delivers the plasma to the process chamber 30 . The output pipeline 12 includes a delivery pipeline connecting the reaction chamber 111 of the remote plasma system 10 and the process chamber 30 .

[0050] The optical detection line 13 is installed on the output line 12 and is used to detect plasma through a first observation window 131 on one side of the optical detection line 13. The optical detection line 13 is typically positioned perpendicular to the delivery line. Through this first observation window 131, the plasma at the output of the remote plasma system 10 is monitored, thereby enabling more accurate optical detection data acquisition. A sapphire window can be used for this first observation window 131, enhancing its wide-spectrum light transmission and corrosion resistance. The sapphire window is typically secured via an SM05 internal thread.

[0051] Optionally, the remote plasma system 10 may also provide at least one active substance to the process chamber 30 during the thin film deposition process to promote thin film deposition.

[0052] In some embodiments of the present invention, those skilled in the art may use emission spectroscopy to collect spectra. Specifically, the sensor includes a spectrometer 20, and a first observation window 131 is provided at the outlet of the remote plasma system 10 connected to the process chamber 30. The spectrometer 20 collects the emission spectrum of the remote plasma through the first observation window 131 to characterize the actual cleaning rate of the remote plasma. The emission spectrum includes characteristic spectral lines of at least one active substance. Here, the spectrometer 20 is connected to the first observation window 131 through an optical fiber 201 to obtain the radiation spectrum of the plasma, and performs closed-loop control of the operating power of the remote plasma system 10 through a signal line 202 to improve the stability of the cleaning efficiency of the process chamber 30.

[0053] Furthermore, the active substance is selected from at least one of Ar-I, FI, Ar-II, and N2(2+). In some embodiments, at least one active species may be selected from at least one of Ar-I, FI, Ar-II, and N2(2+). The characteristic wavelengths of Ar-I include 811.5 nm and 750.4 nm, the characteristic wavelengths of FI include 703.7 nm and 712.8 nm, the characteristic wavelengths of Ar-II include 434.8 nm and 427.8 nm, and the characteristic wavelengths of N2(2+) include 315.9 nm, 337.2 nm, and 357.6 nm.

[0054] Please refer to Figure 3 , Figure 3 A schematic flow chart of controller execution steps according to some embodiments of the present invention is shown.

[0055] Please refer to Figure 3 The controller is configured to first execute step S1: after the thin film deposition process is completed in the process chamber 30, operate the remote plasma system 10 and collect a measured spectrum of the remote plasma at its outlet. The measured spectrum can be selected from an emission spectrum, an absorption spectrum, or a laser-induced fluorescence spectrum.

[0056] Then, the controller may execute step S2: comparing the measured spectrum with a standard spectrum corresponding to a standard cleaning rate, and adjusting the operating power of the remote plasma system 10 to reduce the difference between the two.

[0057] Please refer to Figure 4 , Figure 4 A schematic diagram of a process for adjusting the operating power of a remote plasma system according to some embodiments of the present invention is shown.

[0058] like Figure 4 As shown, the controller first performs step S2.1: analyzing the measured spectrum to determine the measured radiation intensity at the characteristic spectrum line of at least one active substance.

[0059] Afterwards, the controller executes step S2.2: looking up the standard spectrum to determine the standard radiation intensity at the characteristic spectrum line.

[0060] Here, the step of calibrating the standard spectrum can be obtained in situ. For example: after the process chamber 30 completes the thin film deposition process, the surface of the process chamber 30 is detected to determine the first film thickness. The remote plasma system 10 is operated at a preset calibrated power, and the calibrated spectrum of the remote plasma at its outlet is collected. In response to the operating time of the remote plasma system 10 reaching a preset time window, the remote plasma system 10 is turned off, and the surface of the process chamber 30 is detected to determine the second film thickness. According to the difference between the first film thickness and the second film thickness, and the time window, the corresponding calibrated cleaning rate is determined, and the calibrated spectrum is determined as the standard spectrum corresponding to the calibrated cleaning rate. Furthermore, those skilled in the art can also adjust the operating power of the remote plasma system multiple times and repeat the above steps to obtain standard spectra corresponding to multiple standard cleaning rates respectively.

[0061] The controller then executes step S2.3: calculating the difference between the standard radiation intensity and the measured radiation intensity and inserting the difference into a pre-built database to determine the adjustment amount for the operating power. The database stores the corresponding relationship between the radiation intensity of at least one active substance at its characteristic spectrum and the operating power of the remote plasma system 10.

[0062] Furthermore, the step of constructing a database may include: adjusting the calibration power multiple times to obtain the corresponding calibration spectra; analyzing each calibration spectrum to determine the radiation intensity at the characteristic spectrum line of at least one active substance; and fitting the corresponding relationship between the radiation intensity at the characteristic spectrum line of each active substance and the corresponding calibration power to construct a database. Here, each active substance includes a fitted corresponding relationship. The expression for the relationship between the calibration power of the remote plasma system 10 and the radiation intensity at the characteristic spectrum line of at least one active substance is:

[0063] P RPS1 =αF(I1,I2,I3,……,I n ,),

[0064] Among them, P RPS1 is the calibration power, I is the radiation intensity at the characteristic spectral line, 1…n is the type of active species, F is the correlation function of the radiation intensity, and α is the proportional coefficient.

[0065] Finally, the controller executes step S2.4: according to the adjustment amount, the operating power of the remote plasma system 10 is changed so that the remote plasma cleans the process chamber 30 at a constant speed according to the preset standard cleaning rate. Here, the relationship between the standard cleaning rate and the operating power of the remote plasma system 10 is expressed as:

[0066] P RPS2 =βR(clean),

[0067] Among them, P RPS2 is the operating power of the remote plasma system, R(clean) is the standard cleaning rate, and β is the proportional coefficient.

[0068] Those skilled in the art will understand that collecting spectra using emission spectroscopy is only a preferred embodiment in this field.

[0069] Alternatively, in some embodiments of the present invention, those skilled in the art may also employ absorption spectroscopy or laser-induced fluorescence spectroscopy to collect spectra. Specifically, the sensor includes a spectrometer 20. The remote plasma system 10 is connected to the process chamber 30 at an outlet with a second observation window and a third observation window positioned opposite each other. The second observation window is connected to a light source. The spectrometer 20 collects the absorption spectrum or laser-induced fluorescence spectrum of the remote plasma through the third observation window to characterize the actual cleaning rate of the remote plasma. The absorption spectrum or laser-induced fluorescence spectrum includes characteristic spectral lines of at least one active substance.

[0070] Alternatively, in some embodiments of the present invention, those skilled in the art may also utilize laser interference signals or laser Thomson scattering signals to collect spectra. Specifically, the sensor comprises a photoelectric sensor. A second observation window and a third observation window are provided at the outlet of the remote plasma system 10 connected to the process chamber 30. The second observation window is connected to a laser light source. The photoelectric sensor collects a laser interference signal or a laser Thomson scattering signal of at least one active species in the remote plasma through the third observation window to characterize the actual cleaning rate of the remote plasma.

[0071] The following will describe the working principle of the above-mentioned thin film deposition equipment in conjunction with some embodiments of the cleaning method of the process chamber. Those skilled in the art will understand that the embodiments of the cleaning method of the process chamber are only some non-limiting embodiments provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the thin film deposition equipment. Similarly, the cleaning method of the process chamber is also only some non-limiting embodiments provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in the cleaning method of the process chamber.

[0072] Specifically, the cleaning method for the process chamber 30 includes the following steps: after the thin film deposition process is completed in the process chamber 30, operating the remote plasma system 10 to provide remote plasma to the process chamber 30; collecting an optical signal of the remote plasma input into the process chamber 30 from the outlet of the remote plasma system 10 connected to the process chamber 30; and adjusting the operating power of the remote plasma system 10 based on the optical signal so that the remote plasma cleans the process chamber 30 at a constant speed according to a preset standard cleaning rate. Here, the cleaning method is used to control the actual output power of the remote plasma system 10 to improve the stability and consistency of the cleaning efficiency of the process chamber 30.

[0073] Furthermore, the thin film deposition system can determine the type of active species and the relative density of the corresponding active species based on the measured spectrum, thereby assessing damage to the inner wall of the process chamber 30. The intensity of the spectral line corresponding to each active species is proportional to the density of the active species. This allows the cleaning method to target and match the cleaning mechanism, selecting the appropriate species based on the type of contaminants deposited in the chamber, thereby avoiding side reactions and / or damage.

[0074] In some embodiments, the inner wall of process chamber 30 is typically made of aluminum. When the inner wall of process chamber 30 is severely damaged, the active species in process chamber 30 will produce, in addition to the primary spectral lines of the first cleaning gas during normal operation of remote plasma system 10, the primary spectral lines of the aluminum inner wall material. The present invention can monitor changes in the intensity of these spectral lines to determine whether the inner wall of process chamber 30 is damaged. The characteristic wavelengths of aluminum include 394.4 nm and 396.2 nm.

[0075] Specifically, those skilled in the art can pre-calibrate the operating power of the remote plasma system 10 and its corresponding calibrated radiation intensity for the aluminum metal in the process chamber 30. They can then adjust the operating power of the remote plasma system 10 to obtain the actual radiation intensity of the aluminum metal in the process chamber 30. If the actual radiation intensity is greater than three times the calibrated radiation intensity at the operating power of the remote plasma system 10, it is determined that the inner wall of the process chamber 30 is severely damaged.

[0076] In summary, the cleaning method of the process chamber 30, the remote plasma system 10, the thin film deposition equipment, and the computer-readable storage medium provided by the present invention can be used to control the actual output power of the remote plasma system 10 to improve the stability and consistency of the cleaning efficiency of the process chamber 30.

[0077] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0078] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition device, characterized in that: include: A process chamber is used to carry semiconductor devices to be processed and perform thin film deposition processes on them; A remote plasma system, at least for providing remote plasma to a process chamber for completing the thin film deposition process, for cleaning the process chamber; as well as A control system includes a sensor and a controller, wherein the sensor is located at the outlet of the remote plasma system connected to the process chamber, and the controller is connected to the sensor to obtain an optical signal of the remote plasma input into the process chamber, and adjusts the operating power of the remote plasma system according to the optical signal so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

2. The thin film deposition apparatus according to claim 1, wherein: The sensor includes a spectrometer, and a first observation window is provided at an outlet of the remote plasma system connected to the process chamber. The spectrometer collects an emission spectrum of the remote plasma through the first observation window to characterize an actual cleaning rate of the remote plasma, wherein the emission spectrum includes a characteristic spectrum line of at least one active substance, or The sensor includes a spectrometer. A second observation window and a third observation window are provided opposite to each other at an outlet of the remote plasma system connected to the process chamber. The second observation window is connected to a light source. The spectrometer collects an absorption spectrum or a laser-induced fluorescence spectrum of the remote plasma through the third observation window to characterize an actual cleaning rate of the remote plasma. The absorption spectrum or the laser-induced fluorescence spectrum includes a characteristic spectral line of at least one active substance.

3. The thin film deposition apparatus according to claim 2, wherein: The active substance is selected from at least one of Ar-I, FI, Ar-II, and N2(2+).

4. The thin film deposition apparatus according to claim 2, wherein: The controller is configured to: After the thin film deposition process is completed in the process chamber, operating the remote plasma system and collecting a measured spectrum of the remote plasma at its outlet, wherein the measured spectrum is selected from the emission spectrum, the absorption spectrum, or the laser-induced fluorescence spectrum; and The measured spectrum is compared with a standard spectrum corresponding to the standard cleaning rate, and the operating power of the remote plasma system is adjusted to reduce the difference between the two.

5. The thin film deposition apparatus according to claim 4, wherein: The step of comparing the measured spectrum with the standard spectrum corresponding to the standard cleaning rate and adjusting the operating power of the remote plasma system to reduce the difference between the two comprises: analyzing the measured spectrum to determine the measured radiation intensity at a characteristic spectral line of at least one of the active substances; Refer to the standard spectrum to determine its standard radiation intensity at the characteristic spectrum line; Calculating a difference between the standard radiation intensity and the measured radiation intensity and substituting the difference into a pre-built database to determine an adjustment amount for the operating power, wherein the database stores a correspondence between the radiation intensity of at least one of the active substances at its characteristic spectrum and the operating power of the remote plasma system; and The operating power of the remote plasma system is changed according to the adjustment amount, so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

6. The thin film deposition apparatus according to claim 5, wherein: The steps of calibrating the standard spectrum include: After the thin film deposition process is completed in the process chamber, detecting a surface of the process chamber to determine a first film thickness; operating the remote plasma system at a preset calibrated power and collecting a calibrated spectrum of the remote plasma at its outlet; In response to the remote plasma system operating time reaching a predetermined time window, shutting down the remote plasma system and detecting the surface of the process chamber to determine a second film thickness; and A corresponding calibrated cleaning rate is determined according to the difference between the first film thickness and the second film thickness, and the time window, and the calibrated spectrum is determined as a standard spectrum corresponding to the calibrated cleaning rate.

7. The thin film deposition apparatus according to claim 6, wherein: The steps of constructing the database include: Adjusting the calibration power multiple times to obtain corresponding calibration spectra respectively; Analyzing each of the calibration spectra to respectively determine the radiation intensity at a characteristic spectral line of at least one of the active substances; and The corresponding relationship between the radiation intensity at the characteristic spectrum line of each active substance and the corresponding calibrated power is fitted respectively to construct the database.

8. The thin film deposition apparatus according to claim 1, wherein: The sensor includes a photoelectric sensor. A second observation window and a third observation window are provided at the outlet of the remote plasma system connected to the process chamber. The second observation window is connected to a laser light source. The photoelectric sensor collects a laser interference signal or a laser Thomson scattering signal of at least one active substance in the remote plasma through the third observation window to characterize the actual cleaning rate of the remote plasma.

9. A method for cleaning a process chamber, characterized in that: The following steps are involved: After the thin film deposition process is completed in the process chamber, operating the remote plasma system to provide remote plasma to the process chamber; collecting an optical signal of the remote plasma input into the process chamber from an outlet of the remote plasma system connected to the process chamber; as well as The operating power of the remote plasma system is adjusted according to the optical signal so that the remote plasma cleans the process chamber at a constant speed according to a preset standard cleaning rate.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the method for cleaning a process chamber according to claim 9 is implemented.

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