Substrate, semiconductor processing system and related method

Abstract

Substrates, related systems, and related methods are described. A base according to an embodiment of the present disclosure includes a plurality of contact knobs. A contact knob of the plurality of contact knobs may be honed.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of U.S. Provisional Patent Application Serial No. 63 / 568,175, filed on March 21, 2024, entitled “SUSCEPTORS, SEMICONDUCTOR PROCESSING SYSTEMS, AND RELATED METHODS,” the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates generally to fabricating semiconductor devices. More particularly, the present disclosure relates to supporting substrates in a semiconductor processing system during loading and unloading of substrates into and from a process chamber, such as a process chamber used to deposit material layers onto a substrate during fabrication of a semiconductor device. Background Art

[0004] Semiconductor devices, such as integrated circuits and power electronics, are typically formed by depositing layers of material onto a substrate. Material layer deposition is typically achieved by loading the substrate into a reaction chamber, heating the substrate, and providing a material layer precursor to the reaction chamber. The reaction chamber typically flows the material layer precursor over the substrate under selected conditions to deposit the material layer onto the substrate. Once the material layer reaches the desired thickness, the flow of the material layer precursor into the reaction chamber is stopped, and the substrate is unloaded from the reaction chamber so that the substrate can undergo further processing.

[0005] In some deposition operations, buildup may occur within the reaction chamber while a material layer is being deposited on a substrate. For example, material layer precursors and / or reaction products provided to the reaction chamber may cause buildup to form on the inner surfaces of the reaction chamber walls. Material layer precursors may also cause buildup to form on structures within the reaction chamber, such as within gaps between structures that are movable relative to one another. Furthermore, during the deposition process, material layer precursors provided to the reaction chamber may cause buildup between the substrate and the base structure on which the substrate is mounted. While generally manageable, buildup on the inner surfaces of the reaction chamber walls may complicate temperature control within the reaction chamber, for example by changing the transmissivity of the reaction chamber walls. Buildup formed within mechanical gaps can reduce reliability by impairing the movement of structures, potentially increasing resistance to movement and / or bonding. Furthermore, buildup between the substrate and the base may mechanically secure the substrate to the base, potentially causing damage to reaction chamber components and / or the substrate itself during unloading after the material layer has been deposited onto the substrate.

[0006] Various countermeasures exist to limit the development of buildup within the reaction chamber. For example, the flow of material layer precursors can be adjusted to limit the development of buildup on internal surfaces and structures. A purge gas can be provided to the interior of the reaction chamber to separate the material layer precursors and / or reaction products from the internal surfaces and structures. And an etchant can be provided to the reaction chamber to etch surfaces and structures prone to buildup. However, flow pattern adjustment is generally reserved for controlling the material layer thickness distribution, and the purge efficiency may be limited by the tendency of the material layer precursors and / or reaction products to diffuse into the purge gas, and the etchant may cause damage to the reaction chamber and / or the substrate.

[0007] Such systems and methods generally meet their intended purposes. However, there remains a need in the art for improved substrate supports, semiconductor processing systems, and methods for depositing material layers onto substrates. The present disclosure provides a solution to this need. Summary of the Invention

[0008] In some embodiments, a base is described herein, comprising: an annular body extending around a rotation axis and having a plurality of tang portions extending radially inward toward the rotation axis; a disk body having an upper surface disposed on the tang portions of the annular body, the disk body having: a first plurality of contact knobs circumferentially distributed around the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed around the rotation axis on a second circumference C2; ​​and a third plurality of contact knobs circumferentially distributed around the rotation axis on a third circumference C3; wherein the second circumference is radially intermediate between the first circumference and the third circumference to limit contact between a substrate disposed on the disk body and the upper surface of the disk body.

[0009] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.1 to at most 0.9.

[0010] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 to at most 0.7.

[0011] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 to at most 0.5.

[0012] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 to at most 0.8.

[0013] In some embodiments, the first plurality of contact knobs includes a first surface, the second plurality of contact knobs includes a second surface, and the third plurality of contact knobs includes a third surface.

[0014] In some embodiments, the first surface, the second surface, and the third surface comprise a refractory ceramic.

[0015] In some embodiments, the refractory ceramic comprises a semiconductor.

[0016] In some embodiments, the semiconductor includes silicon carbide.

[0017] In some embodiments, at least one of the first surface, the second surface, and the third surface is honed.

[0018] In some embodiments, the first surface, the second surface, and the third surface are all honed.

[0019] In some embodiments, all of the first surface, the second surface, and the third surface are unhoned.

[0020] In some embodiments, the first plurality of contact knobs has a first height, wherein the second plurality of contact knobs has a second height, and wherein the third plurality of contact knobs has a third height.

[0021] In some embodiments, the first height, the second height, and the third height are equal within a 10% error range.

[0022] In some embodiments, the first height is at least 10% greater than at least one of the second height and the third height.

[0023] In some embodiments, the second height is at least 10% greater than at least one of the first height and the third height.

[0024] In some embodiments, the third height is at least 10% greater than at least one of the second height and the third height.

[0025] In some embodiments, the disc body includes a ceramic coating.

[0026] In some embodiments, the base includes a silicon-containing pre-coating layer. The silicon-containing pre-coating layer may be formed on the first plurality of contact knobs. The silicon-containing pre-coating layer may be formed on the second plurality of contact knobs. The silicon-containing pre-coating layer may be formed on the third plurality of contact knobs.

[0027] The present invention further describes an apparatus for processing a substrate, the apparatus comprising: a processing chamber configured to accommodate a substrate; and a susceptor configured to support the substrate, the susceptor comprising an annular body extending around a rotation axis and having a plurality of shank portions extending radially inwardly toward the rotation axis; a disk body having an upper surface disposed on the shank portions of the annular body, the disk body having: a first plurality of contact knobs circumferentially distributed around the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed around the rotation axis on a second circumference C2; ​​and a third plurality of contact knobs circumferentially distributed around the rotation axis on a third circumference C3; wherein the second circumference is radially intermediate between the first circumference and the third circumference to limit contact between a substrate disposed on the disk body and the upper surface of the disk body.

[0028] The present invention further describes a method for forming an epitaxial layer, the method comprising: providing an apparatus comprising: a processing chamber configured to accommodate a substrate; and a susceptor configured to support the substrate, the susceptor comprising an annular body extending about a rotation axis and having a plurality of shank portions extending radially inwardly toward the rotation axis; a disk body having an upper surface disposed on the shank portions of the annular body, the disk body having: a first plurality of contact knobs circumferentially distributed about the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the rotation axis on a second circumference C2; ​​and a third plurality of contact knobs circumferentially distributed about the rotation axis on a third circumference C3; wherein the second circumference is radially midway between the first circumference and the third circumference. the substrate being bent and supported by at least one of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs during at least one of placing the substrate on the susceptor, contacting the substrate with the one or more process gases, and forming the epitaxial layer on the substrate; and thereby supporting the substrate on one or more of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs to limit contact between the substrate and the upper surface of the disk body.

[0029] In some embodiments, the method includes transporting the substrate into a processing chamber.

[0030] In some embodiments, the method includes transporting the substrate out of the processing chamber.

[0031] This summary is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the detailed description of example embodiments of the present disclosure below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A base 100 according to an embodiment of the present disclosure is shown.

[0033] Figure 2 A gas delivery device 12 is shown.

[0034] Figure 3 A chamber arrangement 14 is shown.

[0035] Figure 4 An exemplary base 400 is shown.

[0036] Figure 5 A cross-section of a base 400 is shown according to an embodiment of the present disclosure.

[0037] Figure 6 It is shown how damage to the silicon wafer can be avoided by employing a susceptor including honed contact knobs.

[0038] Figure 7 Layers of material are shown deposited on a wafer supported on a susceptor.

[0039] Figure 8 A curved substrate 820 is shown on a base 810 in accordance with an embodiment of the present disclosure.

[0040] Figure 9 An embodiment of a base 900 is shown.

[0041] Figure 10 Shown are cross sections of contact knobs 1001 , 1002 , 1003 according to an embodiment of the present disclosure.

[0042] Figure 11 A method according to an embodiment of the present disclosure is shown.

[0043] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0044] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Accordingly, it is intended that the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0045] As used herein, "substrate" refers to any material having a surface on which a material can be deposited. A substrate may comprise a bulk material, such as a semiconductor material, such as silicon (e.g., single crystal silicon). A substrate may comprise a wafer, such as a 300 mm wafer, and may be formed of a semiconductor material (e.g., silicon). A substrate may include one or more layers covering the bulk material. The one or more layers covering the bulk material may include a pattern, including various topological structures formed in or on the material layer, such as trenches, vias, lines, and the like.

[0046] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of the present disclosure.

[0047] The specific embodiments shown and described are illustrative of the present invention and its best mode and are not intended to limit the scope of the various aspects and embodiments in any way. In fact, for the sake of brevity, the conventional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between the various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems and / or may not exist in some embodiments.

[0048] The terms used herein are for the purpose of describing specific embodiments only and are not intended to limit the present disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the term "comprising" and / or its variations when used in this specification specify the presence of the stated features, integers, steps, operations, elements, and / or parts, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or combinations thereof.

[0049] The term "about" is intended to include the degree of error associated with the measurement of a particular quantity based on the equipment available at the time of filing this application. For example, "about" may include a range of ±8% or 5% or 2% of a given value, or variations thereof based on the technology and concepts involving the particular value or range, and as understood by those skilled in the art. In addition, the term "exemplary" is used herein to mean "serving as an example, instance or illustration." Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. The terms "at least one" and "one or more" should be understood to include any integer greater than or equal to one, i.e., one, two, three, four, etc. The term "plurality" is understood to include any integer greater than or equal to two, i.e., two, three, four, five, etc. The term "connected" may include indirect "connections" and direct "connections."

[0050] In some embodiments, "unhoned" may mean one or more of "not honed," "original," "natural," and "as deposited."

[0051] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in other orders, or in some cases omitted.

[0052] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

[0053] Described herein are bases, related apparatus, and related methods.

[0054] An apparatus according to an embodiment of the present disclosure can be used to process a substrate and includes a processing chamber configured to accommodate a substrate and a susceptor as described herein. The susceptor or a portion thereof can be disposed in the processing chamber and can be configured to support the substrate, such as during at least one of loading, processing, and unloading of the substrate. Such an embodiment of the apparatus can be used to process a substrate, such as for forming a layer such as an epitaxial layer on a substrate. An exemplary method can include placing a substrate including a surface (e.g., a single crystal surface) on the susceptor. The method can also include contacting the substrate with one or more process gases. Thus, a layer, such as an epitaxial layer, can be formed on the surface. It should be understood that the exemplary process for forming a layer such as an epitaxial layer itself is known in the art.

[0055] In addition to or instead of one or more of the above features, depositing the material layer may include heating the substrate to a material layer deposition temperature between about 500 degrees Celsius and about 1200 degrees Celsius, or between about 700 degrees Celsius and about 1200 degrees Celsius, or between about 900 degrees Celsius and about 1200 degrees Celsius.

[0056] In addition to or in lieu of one or more of the above features, depositing the layer of material can include pressurizing the interior of the chamber body housing the susceptor to a deposition pressure between about 1 Torr and about 760 Torr, or between about 20 Torr and about 760 Torr, or between about 50 Torr and about 760 Torr.

[0057] Reference will now be made to the drawings, wherein like reference numerals identify similar structural features or aspects of the subject disclosure. For purposes of illustration and description, and not limitation, Figure 1 A partial view of an example of a susceptor 100 according to an embodiment of the present disclosure is shown in FIG. The systems and methods of the present disclosure can be used to deposit material layers onto a substrate during the manufacture of semiconductor devices, such as at least one of before, during, and after depositing a thick epitaxial film onto a substrate to manufacture power electronic devices, but the present disclosure is generally not limited to the manufacture of power electronic devices or the deposition of any particular type of material layer.

[0058] refer to Figure 1, a semiconductor processing system 10 is shown. The semiconductor processing system 10 includes a gas delivery apparatus 12 and a chamber apparatus 14 including a susceptor 100. The semiconductor processing system 10 also includes an exhaust apparatus 16 and a controller 18. Although a particular arrangement of the semiconductor processing system 10 is shown and described herein, it should be understood and appreciated that semiconductor processing systems having other arrangements may also benefit from the present disclosure.

[0059] The gas delivery apparatus 12 is connected to the chamber apparatus 14 and is configured to provide a material layer processing gas 20 to the chamber apparatus 14. The chamber apparatus 14 houses the susceptor 100, fluidically couples the susceptor 100 to the gas delivery apparatus 12 to receive the material layer processing gas 20 from the gas delivery apparatus 12, and is configured to provide the material layer processing gas 20 to the top surface 6 of the substrate 2. The exhaust apparatus 16 is connected to the chamber apparatus 14, fluidically couples the susceptor 100, and is configured to convey a flow of residual material layer precursors and / or reaction products 26 emitted by the chamber apparatus 14 to an external environment 24 outside the semiconductor processing system 10. The controller 18 is operably coupled to the semiconductor processing system 10 and is configured to control the deposition of the material layer 4 onto the top surface 6 of the substrate 2. In some examples, the material layer 4 can be an epitaxial material layer. The material layer 4 can include silicon (e.g., contain silicon, include silicon, consist of, or consist essentially of silicon). The material layer 4 can be a thick epitaxial layer. The material layer 4 may have a thickness between about 40 microns and about 100 microns, or between about 60 microns and about 100 microns, or even between about 80 microns and about 100 microns.

[0060] refer to Figure 2 , a gas delivery apparatus 12 is shown. The gas delivery apparatus 12 includes a first precursor source 30, an optional second precursor source 32, a carrier gas / purge gas source 34, and an optional additional source 36. The first precursor source 30 is coupled to the chamber apparatus 14 via a precursor conduit 40 and is configured to provide a first precursor 38 to the chamber apparatus 14. In some examples, the first precursor source 30 may be further coupled to the chamber apparatus 14 via a first precursor valve. The first precursor valve may include a manual actuator, a pneumatic actuator, or an electric actuator such as a solenoid. The first precursor valve may be operably associated with a controller (such as the controller 18). The first precursor valve may be incorporated into a flow control device, such as a first precursor mass flow controller (MFC) device. According to some examples, the first precursor 38 may include a silicon-containing precursor. Non-limiting examples of suitable silicon-containing precursors include silane (SiH4) and halosilanes, such as chlorosilanes, such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si).

[0061] The optional second precursor source 32 is coupled to the chamber apparatus 14 via a precursor conduit 40 and can be configured to provide a second precursor 42 to the chamber apparatus 14. In certain examples, the optional second precursor source 32 can be further coupled to the chamber apparatus 14 via a second precursor valve. The second precursor valve can include a manual actuator, a pneumatic actuator, or an electric actuator. The second precursor valve can be operably associated with a controller (such as controller 18). The second precursor valve can be incorporated into a flow control device, such as a second precursor MFC device. According to certain examples, the second precursor 42 can include a dopant or alloy component. Non-limiting examples of suitable dopants or alloy components include germanium (Ge), arsenic (As), phosphorus (P), and / or boron (B).

[0062] The carrier gas / purge gas source 34 is connected to the chamber device 14 via a precursor conduit 40 and is configured to provide a carrier gas / purge gas 44 to the chamber device 14. In some examples, the carrier gas / purge gas source 34 can be connected to the chamber device 14 via a carrier gas / purge gas valve. The carrier gas / purge gas valve may include a manual actuator, an electric actuator, or a pneumatic actuator. The carrier gas / purge gas valve may be operably associated with a controller (such as controller 18). The carrier gas / purge gas valve may be incorporated into a flow control device, such as a carrier gas / purge gas MFC device. According to some examples, the carrier gas / purge gas 44 may include hydrogen (H2) gas. It is also conceivable that the carrier gas / purge gas 44 may include an inert gas. Non-limiting examples of suitable inert gases include nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, and mixtures thereof.

[0063] Optional additional source 36 can be connected to chamber apparatus 14 by optional additional conduit, and can be configured to provide additional gas 22 to chamber apparatus 14. In some examples, optional additional source 36 can be coupled to chamber apparatus 14 by additional gas valve. In addition, gas valve can comprise manual actuator, electric actuator or pneumatic actuator. In addition, gas valve can be operably associated with controller (such as controller 18). In addition, gas valve can be incorporated into flow control device, such as etchant MFC device. According to some examples, optional additional source 36 can also be connected to chamber apparatus 14 by precursor conduit 40.

[0064] The controller 18 includes a device interface 50, a processor 52, a user interface 54, and a memory 56. The device interface 50 is connected to the wired or wireless link 28 and is coupled thereto to one or more of the gas delivery apparatus 12, the chamber apparatus 14, and the exhaust apparatus 16. The processor 52 is connected to the device interface 50, is operatively connected to the user interface 54, provides and receives user output and user input therethrough, and is configured to communicate with the memory 56. The memory 56 includes a non-transitory machine-readable medium. The non-transitory machine-readable medium has a plurality of program modules 58 recorded therein, which, when read by the processor 52, cause the processor 52 to perform certain operations. Among the operations are operations of the material layer deposition method as described herein. Although the gas delivery apparatus 12 and the controller 18 are shown and described herein as having a particular arrangement, it should be understood and appreciated that semiconductor processing systems having gas delivery apparatuses and / or controllers having different arrangements may also benefit from the present disclosure.

[0065] refer to Figure 3 , a chamber assembly 14 is shown. The chamber assembly 14 includes an injection flange 60, a chamber body 62, and an exhaust flange 64. The chamber assembly 14 also includes an upper lamp array 66, a lower lamp array 68, and a divider 70. The chamber assembly 14 also includes a support member 72, an axis member 74, and a lift and rotation module 76. Although a particular arrangement of the chamber assembly 14 is shown and described herein, it should be understood and appreciated that chamber arrangements having other arrangements may also benefit from the present disclosure.

[0066] The chamber body 62 is formed of a transparent material 82 and has an injection end 84 and a longitudinally opposed (relative to the general direction of fluid flow through the chamber body 62) discharge end 86. The chamber body 62 also has a hollow interior 88. The injection flange 60 is connected to the injection end 84 of the chamber body 62 and is used to connect the gas delivery device 12 (such as Figure 1 ) is fluidly coupled to the interior 88 of the chamber body 62. The exhaust flange 64 is connected to the exhaust end 86 of the chamber body 62 and is fluidly coupled to the interior 88 of the chamber body 62. It is contemplated that the exhaust flange 64 fluidly couples the interior 88 of the chamber body 62 (and through it, the gas delivery device 12) to the exhaust device 16 ( Figure 1 In some examples, the transparent material 82 forming the chamber body 62 can be a ceramic material. Examples of suitable transparent materials include quartz.

[0067] The upper lamp array 66 is supported above the chamber body 62 and is configured to heat the substrate 2 when the substrate 2 is positioned on the susceptor 100. In some examples, the upper lamp array 66 may include one or more linear lamps. The upper lamp array 66 may include filament-type lamps. The upper lamp array 66 may include one or more linear lamps that extend longitudinally above the chamber body 62 between the injection end 84 and the exhaust end 86 of the chamber body 62. According to some examples, the upper lamp array 66 may include a plurality of linear lamps. The plurality of linear lamps may be laterally spaced apart from each other between longitudinally opposing injection ends 84 and exhaust ends 86 of the chamber body 62. The plurality of linear lamps may extend laterally through the chamber body 62 between laterally opposing sides of the chamber body 62.

[0068] Lower light array 68 is similar to upper light array 66 and is additionally supported below chamber body 62. In some examples, lower light array 68 can include one or more linear lights. The one or more linear lights can be substantially orthogonal to the one or more linear lights of upper light array 66. According to some examples, lower light array 68 can include one or more spotlights. The one or more spotlights can be oriented upward toward chamber body 62. The one or more spotlights can be offset from and tilted relative to axis of rotation 98.

[0069] The divider 70 is disposed within the interior 88 of the chamber body 62 and divides the interior 88 into an upper chamber 90 (relative to gravity) and a lower chamber 92. It is contemplated that the divider 70 has a divider hole 94. The divider hole 94 extends through the thickness of the divider 70 and fluidically couples the upper surface of the divider 70 to the lower surface of the divider 70. The divider hole 94 also couples the upper chamber 90 to the lower chamber 92 of the chamber body 62. In some examples, the divider 70 may be formed from an opaque material 96. The opaque material 96 may have a transmittance to electromagnetic radiation within the wavelengths emitted by the upper lamp array 66 and / or the lower lamp array 68 that is lower than the transmittance of the transparent material 82 forming the chamber body 62. Non-limiting examples of suitable opaque materials include graphite and pyrolytic carbon materials. According to some examples, the divider 70 may be (at least partially) encapsulated with a coating. Non-limiting examples of suitable coatings include ceramic coatings, such as silicon carbide (SiC) coatings.

[0070] The susceptor 100 is configured to support the substrate 2 (eg, the substrate 2 during transport of the substrate and during deposition of a material layer onto the substrate (eg, the substrate 2 during deposition of a material layer 4 onto the substrate 2). Figure 1)) supports a substrate on at least one of the chamber bodies 62. In this regard, it is contemplated that a susceptor 100 is disposed within the interior 88 of the chamber body 62 and is supported for rotation R relative to the chamber body 62 about a rotation axis 98. More specifically, the susceptor 100 is disposed within the divider aperture 95 and supported (at least partially) within the divider aperture 94 for rotation R relative to the chamber body 62 about the rotation axis 98. It is further contemplated that the susceptor 100 is operably associated with the lift and rotate module 76. In the illustrated example, the susceptor 100 is coupled to the lift and rotate module 76 via a support member 72 disposed within the lower chamber 92 and rotationally fixed relative to the susceptor 100, and a shaft member 74 rotationally fixed relative to the support member 72 and extending through a lower wall of the chamber body 62 for operably associated with the lift and rotate module 76 in the external environment 24. The support member 72 and / or the shaft member 74 can be formed of a transparent material. Examples of suitable transparent materials include quartz. As will be appreciated by those skilled in the art in light of this disclosure, in other examples, the base 100 may be supported by different support devices and still be within the scope of this disclosure.

[0071] refer to Figure 4 Discussing the exemplary base 400, Figure 4 A top view of a base 400 according to an embodiment of the present disclosure is shown. The base 400 includes an annular body 410 and a disc body 420. The annular body 410 can extend about a rotation axis 401, as described herein. The annular body can include a plurality of tang portions (shown elsewhere) extending radially inward toward the rotation axis.

[0072] The disk body 420 includes a tang portion 421 mounted on the annular body 410. The disk body includes an upper surface. The disk body 420 includes a first plurality of contact knobs 431 circumferentially distributed around the rotation axis on a first circumference C1. The disk body 420 also includes a second plurality of contact knobs 432 circumferentially distributed around the rotation axis on a second circumference C2. The disk body 420 also includes a third plurality of contact knobs 433 circumferentially distributed around the rotation axis on a third circumference C3. The second circumference C2 is radially intermediate between the first circumference C1 and the third circumference C3 to limit contact between a substrate mounted on the disk body 420 and the upper surface of the disk body. Thus, damage to the substrate can be limited or avoided.

[0073] For example, one or more contact knobs may be positioned on a first circumference C1. The first circumference may have a radius of at least 0 mm and at most 20 mm. The contact knobs at the first circumference may have a height greater than 0 mm and less than 0.3 mm.

[0074] For example, 6 or more contact knobs may be positioned on the second circumference C2. The second circumference may have a radius of at least 80 mm to at most 100 mm. The contact knobs at the second circumference may have a height greater than 0 mm and less than 0.3 mm.

[0075] For example, 6 or more contact knobs may be positioned on the third circumference C3. The third circumference may have a radius of at least 240 mm to at most 270 mm. The contact knobs at the third circumference may have a height greater than 0 mm and less than 0.3 mm.

[0076] Of course, other arrangements of the contact knobs are possible. For example, the contact knobs may be present in a lattice, such as a simple square lattice, or a triangular lattice, or a face-centered square lattice, or a hexagonal lattice.

[0077] Any suitable number of contact knobs may be positioned on the first circumference C1. For example, at least 1 to at most 20 contact knobs may be positioned on the first circumference, or at least 2 to at most 5 contact knobs may be positioned on the first circumference, or at least 5 to at most 10 contact knobs may be positioned on the first circumference, or at least 10 to at most 20 contact knobs may be positioned on the first circumference.

[0078] Any suitable number of contact knobs may be positioned on the second circumference C2. For example, at least 1 to at most 20 contact knobs may be positioned on the second circumference, or at least 2 to at most 5 contact knobs may be positioned on the second circumference, or at least 5 to at most 10 contact knobs may be positioned on the second circumference, or at least 10 to at most 20 contact knobs may be positioned on the second circumference.

[0079] Any suitable number of contact knobs may be positioned on the third circumference C3. For example, at least 1 to at most 20 contact knobs may be positioned on the third circumference, or at least 2 to at most 5 contact knobs may be positioned on the third circumference, or at least 5 to at most 10 contact knobs may be positioned on the third circumference, or at least 10 to at most 20 contact knobs may be positioned on the third circumference.

[0080] In some embodiments, and with reference to Figure 9 , three contact knobs 913 may be positioned on a first circumference, six contact knobs 923 may be positioned on a second circumference, and six contact knobs 933 may be positioned on a third circumference. Such a susceptor 900 may stably support a substrate while minimizing or avoiding damage, hot spots, cold spots, etc.

[0081] In some embodiments, the contact knobs 913 on the first circumference can be evenly spaced, i.e., they can be positioned at equal distances on radial lines that are spaced apart at even angles. For example, there can be three contact knobs 913 on the first circumference that are spaced apart on radial lines that are 120 degrees apart.

[0082] In some embodiments, the contact knobs 923 on the second circumference can be evenly spaced, i.e., they can be positioned at equal distances on radial lines that are spaced at even angles. For example, there can be six contact knobs 923 on the second circumference that are spaced on radial lines that are 60 degrees apart.

[0083] In some embodiments, the contact knobs 933 on the third circumference can be evenly spaced, i.e., they can be positioned at equal distances on radial lines that are spaced at even angles. For example, there can be six contact knobs 933 on the third circumference that are spaced on radial lines that are 60 degrees apart.

[0084] In some embodiments, and as Figure 9 As shown, two contact knobs 933 on the third circumference and one contact knob 923 on the second circumference are positioned at the corners of an equilateral triangle.

[0085] In some embodiments, and as Figure 9 As shown, two contact knobs 923 on the second circumference and one contact knob 913 on the first circumference are positioned at the corners of an equilateral triangle.

[0086] In some embodiments, a silicon-containing pre-coating 935 can be formed onto a base, such as base 900. For example, a silicon-containing pre-coating 935 can be formed onto first plurality of contact knobs 913, second plurality of contact knobs 923, and third plurality of contact knobs 933.

[0087] In some embodiments, the silicon-containing pre-coating layer 932 may be between about 500 nanometers and about 5 micrometers, or between about 500 nanometers and about 3 micrometers, or even between about 500 nanometers and about 1.5 micrometers. Advantageously, such a silicon-containing pre-coating layer can separate relatively jagged surfaces (e.g., silicon carbide deposits) on the susceptor surface and / or contact knobs on the susceptor surface from a wafer mounted on the susceptor or the backside of the susceptor (either or both), thereby limiting (or eliminating) damage that may be caused by contact between the wafer or substrate and the jagged surfaces.

[0088] Advantageously, a susceptor according to embodiments of the present disclosure allows for a substrate to be properly supported in a stable manner using as few contact knobs as possible. This can minimize substrate damage. Further advantageously, forming a silicon-containing pre-coat 935 onto the susceptor can limit the tolerances of the honing process used to hone the surfaces of the plurality of contact knobs formed on the susceptor (e.g., opening tolerances to accommodate additional variations), thereby simplifying the manufacture of the susceptor.

[0089] The contact knobs 431, 432, 433 can be positioned at any suitable location. Thus, various relative positions of the first circumference C1, the second circumference C2, and the third circumference C3 are possible. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.1 and at most 0.9. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.8. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.7. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.4 and at most 0.6. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.5. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.4. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.8. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.9. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.6 and at most 0.7.

[0090] Figure 8 It shows how the contact knob 811 can minimize the contact area between a curved substrate 820 (eg, a wafer) and the pedestal 810 .

[0091] Figure 5 A cross section of a base 400 according to an embodiment of the present disclosure is shown, which has been referred to Figure 4 The base 400 is discussed. The base 400 extends around the rotation axis 401 and includes the aforementioned annular body 410 and a disc body 420. The disc body 420 is seated on the tang portion 411 included in the annular body 410.

[0092] The tray body 420 according to an embodiment of the present disclosure may have a front surface 402 and a back surface 403. The back surface 403 may be in contact with the tang portion. The front surface 402 may include contact knobs 431, 432, 433.

[0093] In some embodiments, the first plurality of contact knobs includes a first surface, the second plurality of contact knobs includes a second surface, and the third plurality of contact knobs includes a third surface.

[0094] In some embodiments, at least one of the first, second, and third surfaces is honed. In some embodiments, the first, second, and third surfaces are all honed. In some embodiments, the first, second, and third surfaces are all unhoned. In some embodiments, the first surface is honed, and the second and third surfaces are not honed. In some embodiments, the second surface is honed, and the first and third surfaces are not honed. In some embodiments, the third surface is honed, and the first and second surfaces are not honed. In some embodiments, the first and second surfaces are honed, and the third surface is not honed. In some embodiments, the first and third surfaces are honed, and the second surface is not honed. In some embodiments, the second and third surfaces are honed, and the first surface is not honed.

[0095] In some embodiments, one or more of the first surface, the second surface, and the third surface may be polished. Nevertheless, a honed contact knob can be superior to a polished contact knob. In fact, a substrate on a base with a honed contact knob exhibits superior friction compared to a substrate on a base with a polished contact knob. A base with a honed contact knob causes less substrate damage than a base with an as-formed (i.e., unhoned) contact knob. Therefore, the contact knob of a base according to embodiments of the present disclosure is preferably honed.

[0096] Figure 6 FIG1 illustrates how damage to a substrate, particularly a silicon wafer, can be avoided by employing a pedestal including a honed contact knob according to an embodiment of the present disclosure, the honed contact knob particularly including a honed surface, such as a honed silicon carbide surface. Specifically, severe substrate damage 601, including indentations, is shown, caused by a contact knob having an unhoned silicon carbide surface, the unhoned silicon carbide surface including sharp, damage-causing crystallites. Less severe substrate damage 602, specifically only minor scratches, is caused by employing a honed contact knob. This is associated with the removal of sharp, crystallite features from the honed silicon carbide surface. Without being bound by a particular theory or mode of operation, it is believed that honing the silicon carbide surface can limit the size of backside scratches or nodules, such as shown at 601, thereby limiting the tendency of these features to cause slip line (e.g., crystallographic) defects, which might otherwise tend to propagate through the bulk material forming the material layer deposited onto the substrate. The reduced tendency of such defects to otherwise cause such slip line defects enables the use of higher loading and / or unloading temperatures, for example, between about 650 degrees Celsius and about 750 degrees Celsius, rather than between about 500 degrees Celsius and about 600 degrees Celsius. Advantageously, higher loading and / or unloading temperatures enable greater throughput than would otherwise be possible.

[0097] In some embodiments, the contact knobs included in the base according to embodiments of the present disclosure have an arcuate surface. In some embodiments, the contact knobs have a convex surface. For example, the contact knobs can have a hemispherical, parabolic, or geode-shaped surface. Example cross-sections of contact knobs 1001, 1002, 1003 are shown in FIG. Figure 10 Shown in.

[0098] In some embodiments, the disk body includes a ceramic coating, such as ceramic coating 1001A, ceramic coating 1002A, and / or ceramic coating 1003 A. For example, the ceramic coating may include a refractory ceramic.

[0099] In some embodiments, the contact knob includes, eg is covered by, a ceramic coating.

[0100] In some embodiments, at least one of the first surface, the second surface, and the third surface comprises a refractory ceramic. In some embodiments, the first surface, the second surface, and the third surface comprise a refractory ceramic. In some embodiments, the first surface comprises a refractory ceramic. In some embodiments, the second surface comprises a refractory ceramic. In some embodiments, the third surface comprises a refractory ceramic.

[0101] In some embodiments, the refractory ceramic comprises a semiconductor. In some embodiments, the refractory ceramic comprises a compound semiconductor. In some embodiments, the refractory ceramic comprises a polycrystalline semiconductor.

[0102] In some embodiments, the refractory ceramic includes silicon carbide.

[0103] In some embodiments, a silicon-containing pre-coat layer may overlie the ceramic coating layer.

[0104] In some embodiments, a susceptor as described herein may include a disk body defined by a bulk graphite material. The bulk graphite material may be encapsulated by a coating. The coating may be a silicon carbide coating.

[0105] In some embodiments, the first plurality of contact knobs have a first height, the second plurality of contact knobs have a second height, and the third plurality of contact knobs have a third height. The height of the contact knob may refer to a characteristic dimension of the contact knob in the direction of the rotation axis of the base.

[0106] In some embodiments, the contact knobs in the first plurality of contact knobs have the same height. In some embodiments, the contact knobs in the second plurality of contact knobs have the same height. In some embodiments, the contact knobs in the third plurality of contact knobs have the same height.

[0107] It should be understood that the expression “same height” may indicate equal heights within a certain error range, for example, within an error range of 10%, 5%, 2%, 1%, 0.5%, 0.2% or 0.1%.

[0108] In some embodiments, the first height, the second height, and the third height are equal within an error range of 10%, 5%, 2%, 1%, 0.5%, 0.2%, or 0.1%.

[0109] In some embodiments, the first height is at least 10% greater than at least one of the second height and the third height, for example, 20%, 30%, 40%, or 50% greater. The second height and the third height can be equal. Alternatively, the second height and the third height can be different, for example, the second height can be lower than the first height, for example, by at least 10% to at most 50% less. In some embodiments, the second height can be greater than the third height, for example, by at least 10% to at most 50% greater.

[0110] In some embodiments, the second height is at least 10% greater than at least one of the first height and the third height, for example, 20%, 30%, 40%, or 50% greater. The first height and the third height can be equal. Alternatively, the first height and the third height can be different, for example, the first height can be lower than the second height, such as by at least 10% to at most 50%. In some embodiments, the first height can be greater than the third height, for example, by at least 10% to at most 50% greater.

[0111] In some embodiments, the third height is at least 10% greater than at least one of the second height and the third height, for example, 20%, 30%, 40%, or 50% greater. The first height and the second height can be equal. Alternatively, the first height and the second height can be different, for example, the first height can be lower than the second height, such as by at least 10% to at most 50%. In some embodiments, the first height can be greater than the second height, for example, by at least 10% to at most 50% greater.

[0112] In some embodiments, at least one of the first height, the second height, and the third height is at least 100 nanometers to at most 5 mm, or at least 100 nanometers to at most 200 nanometers, or at least 200 nanometers to at most 500 nanometers, or at least 500 nanometers to at most 1 micrometer, or at least 1 micrometer to at most 2 micrometers, or at least 2 micrometers to at most 5 micrometers, or at least 5 micrometers to at most 10 micrometers, or at least 10 micrometers to at most 20 micrometers, or at least 20 micrometers to at most 50 micrometers, or at least 50 micrometers to at most 100 micrometers, or at least 100 micrometers to at most 200 micrometers, or at least 200 micrometers to at most 500 micrometers, or at least 500 micrometers to at most 1 millimeter, or at least 1 millimeter to at most 2 millimeters, or at least 2 millimeters to at most 5 millimeters.

[0113] like Figure 7 As shown, the deposition of the material layer on the substrate is accomplished by using a lift and rotation module 76 ( Figure 3) rotate the base 100 (and substrate 2) about the rotation axis 98, use the upper lamp array 66 ( Figure 3 shown) and the lower light array 68 ( Figure 3 As shown) the substrate 2 is heated to a predetermined material layer deposition temperature, and a gas delivery device 12 ( Figure 1 As shown) provides the material layer precursor gas 20 to the chamber device 14 ( Figure 1 As shown). It is contemplated that the chamber body 62 causes the material layer precursor gas 20 to flow over the top surface 6 of the substrate 2, and that the heat and pressure conditions within the upper chamber 90 of the chamber body 62 cause the material layer 4 to be deposited onto the top surface 6 of the substrate 2, with residual precursor and / or reaction products 26 ( Figure 1 shown) is delivered to the exhaust device 16 ( Figure 1 ). Once the material layer 4 reaches a predetermined thickness, the flow of the material layer precursor gas 20 to the chamber assembly 14 via the gas delivery assembly 12 is stopped, the rotation of the susceptor 100 by the lift and rotation module 76 is stopped, and the heating of the substrate 2 by the upper lamp array 66 and the lower lamp array 68 is stopped.

[0114] In some embodiments, reference Figure 11A susceptor as described herein may be used in a method for forming an epitaxial layer. The method may include providing 1110 an apparatus comprising a processing chamber configured to accommodate a substrate. The apparatus further includes a susceptor configured to support the substrate. The susceptor includes an annular body extending about a rotational axis. The annular body has a plurality of tang portions extending radially inward toward the rotational axis. The susceptor further includes a disk body having an upper surface disposed on the tang portions of the annular body. The disk body includes: a first plurality of contact knobs circumferentially distributed about the rotational axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the rotational axis on a second circumference C2; ​​and a third plurality of contact knobs circumferentially distributed about the rotational axis on a third circumference C3. The second circumference is radially intermediate between the first circumference and the third circumference to limit contact between a substrate disposed on the disk body and the upper surface of the disk body. The method includes forming 1120 a pre-coating layer on the susceptor. The method also includes transporting 1130 a substrate having a single crystal surface into a processing chamber, for example, while the processing chamber is at a temperature between 650 degrees Celsius and approximately 750 degrees Celsius. The method also includes placing 1140 the substrate on a susceptor. The method also includes contacting 1150 the substrate with one or more process gases. The method also includes bending 1160 the substrate and supporting 1170 the substrate on one or more of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs during forming 1180 an epitaxial layer on the single crystal surface of the substrate. The method also includes transporting 1190 the substrate out of the processing chamber, for example, while the substrate is between approximately 650 degrees Celsius and approximately 750 degrees Celsius. In some examples, forming 1180 the epitaxial layer may include forming 1180 the epitaxial layer at a high temperature (e.g., between approximately 800 degrees Celsius and approximately 1200 degrees Celsius). The relatively high loading and unloading temperatures limit the time required to heat the substrate and / or increase the throughput of the processing chamber relative to processing chambers employing lower loading and unloading temperatures. Contact between the substrate and the tray body of the susceptor can be achieved by supporting the substrate on at least one of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs. Advantageously, the contact knobs minimize contact between the substrate and the upper surface of the tray body.

Claims

1. A base, comprising: an annular body extending about the axis of rotation and having a plurality of tang portions extending radially inward toward the axis of rotation; A tray body having an upper surface seated on the tang portion of the annular body, the tray body having: a first plurality of contact knobs circumferentially distributed around the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the axis of rotation on a second circumference C2; as well as a third plurality of contact knobs circumferentially distributed around the rotation axis on a third circumference C3; The second circumference is radially intermediate between the first circumference and the third circumference to limit contact between the substrate placed on the disk main body and the upper surface of the disk main body.

2. The base according to claim 1, wherein (C2-C1) / (C3-C1) is equal to at least 0.1 and at most 0.

9.

3. The base according to claim 2, wherein: (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.

7.

4. The base according to claim 2, wherein: (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.

5.

5. The base according to claim 2, wherein: (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.

8.

6. The base according to claim 1, wherein The first plurality of contact knobs includes a first surface, the second plurality of contact knobs includes a second surface, and the third plurality of contact knobs includes a third surface.

7. The base according to claim 6, wherein: The first surface, the second surface, and the third surface include refractory ceramic.

8. The base according to claim 7, wherein: The refractory ceramic includes a semiconductor.

9. The base according to claim 8, wherein: The semiconductor includes silicon carbide.

10. The base according to claim 6, wherein: At least one of the first surface, the second surface, and the third surface is honed.

11. The base according to claim 6, wherein The first surface, the second surface, and the third surface are all honed.

12. The base according to claim 6, wherein The first surface, the second surface, and the third surface are all unhoned.

13. The base according to claim 1, wherein The first plurality of contact knobs have a first height, wherein the second plurality of contact knobs have a second height, and wherein the third plurality of contact knobs have a third height.

14. The base according to claim 13, wherein The first height, the second height, and the third height are equal within a 10% error range.

15. The base according to claim 13, wherein The first height is at least 10% greater than at least one of the second height and the third height.

16. The base according to claim 13, wherein The second height is at least 10% greater than at least one of the first height and the third height.

17. The base according to claim 13, wherein The third height is at least 10% greater than at least one of the second height and the third height.

18. The base according to claim 1, wherein The disc body includes a ceramic coating.

19. The submount of claim 1, further comprising a silicon-containing pre-coating layer formed onto the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs.

20. An apparatus for processing a substrate, the apparatus comprising: a processing chamber configured to receive a substrate; and a susceptor configured to support a substrate, The base includes an annular body extending about the rotational axis and having a plurality of tang portions extending radially inwardly toward the rotational axis; A tray body having an upper surface seated on the tang portion of the annular body, the tray body having: a first plurality of contact knobs circumferentially distributed around the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the axis of rotation on a second circumference C2; as well as a third plurality of contact knobs circumferentially distributed around the rotation axis on a third circumference C3; The second circumference is radially intermediate between the first circumference and the third circumference to limit contact between the substrate placed on the disk main body and the upper surface of the disk main body.

21. A method for forming an epitaxial layer, the method comprising: An apparatus is provided that includes: a processing chamber configured to receive a substrate; and a susceptor configured to support a substrate, the susceptor comprising an annular body extending about a rotation axis and having a plurality of tang portions extending radially inwardly toward the rotation axis; a disk body having an upper surface disposed on the tang portions of the annular body, the disk body having: a first plurality of contact knobs circumferentially distributed about the rotation axis on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the rotation axis on a second circumference C2; ​​and a third plurality of contact knobs circumferentially distributed about the rotation axis on a third circumference C3; wherein the second circumference is radially intermediate between the first circumference and the third circumference to limit contact between a substrate disposed on the disk body and the upper surface of the disk body; placing a substrate on a susceptor, the substrate comprising a single crystal surface; contacting the substrate with one or more process gases while the substrate is in the processing chamber; forming an epitaxial layer on the single crystal surface of the substrate using one or more process gases; wherein the substrate is bent and supported by at least one of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs during at least one of placing the substrate on the susceptor, contacting the substrate with one or more process gases, and forming an epitaxial layer on the substrate; and Thus, supporting the substrate on one or more of the first, second, and third pluralities of contact knobs limits contact between the substrate and the upper surface of the tray body.

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