SiC MOSFET dynamic and static characteristic testing device

Abstract

The invention discloses a SiC MOSFET dynamic and static characteristic testing device, and relates to the technical field of characteristic testing devices, the SiC MOSFET dynamic and static characteristic testing device comprises a testing cabinet, a protection door plate and universal wheels, and the top end of the testing cabinet is provided with the protection door plate in sliding connection. Through starting of a driving motor, a rotating rod connected with the output end rotates, so that the rotating rod can rotate through a connected bevel gear set when rotating, and then the rotating rod can rotate a connected first gear when rotating; the first gear is arranged on the rack, so that the first gear can move the isolation plates through the rack when rotating, the isolation plates can protect the placed to-be-tested sample, the number of the isolation plates is three, multiple separation can be achieved, conveyed cold air is input into the isolation plates through the connecting pipe, and the cooling efficiency is improved. And therefore, a relatively good multiple isolation effect is achieved during detection, and a relatively good cooling effect can also be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of characteristic testing devices, and in particular to a SiC MOSFET dynamic and static characteristic testing device. Background Art

[0002] Silicon carbide (SiC) is a semiconductor material with excellent performance. Compared with traditional silicon materials, SiC has higher breakdown voltage, lower conduction loss, higher thermal conductivity and a wider operating temperature range. Therefore, SiC MOSFET shows great advantages in high-power, high-frequency and high-temperature applications, and is widely used in electric vehicles, renewable energy, industrial power supplies, variable frequency drives and power electronics.

[0003] Due to the high voltage, high current, and high temperature characteristics of SiC MOSFETs, test equipment needs to withstand relatively harsh working environments. However, the accuracy and stability of existing test equipment under high voltage and high current are still limited. Under extreme working conditions, existing measurement equipment may have errors or unstable readings. Especially at high temperatures, the temperature drift effect of the device may cause inaccurate test results. Multiple static and dynamic tests need to be performed multiple times separately, especially when testing under different temperature, current, and voltage conditions. The entire test process often takes a long time, and existing test plans and equipment often require manual adjustment and reconfiguration, resulting in low test automation and efficiency. Summary of the Invention

[0004] The object of the present invention is to provide a SiC MOSFET dynamic and static characteristics testing device to solve the problem that the SiC MOSFET dynamic and static characteristics testing device proposed in the above background art has poor high temperature resistance during use.

[0005] To achieve the above-mentioned object, the present invention provides the following technical solutions: a SiC MOSFET dynamic and static characteristics testing device, comprising a test cabinet, a protective door panel, universal wheels, a dynamic and static test module, and a test circuit module; The dynamic and static test module includes an oscilloscope, a signal source, a chassis, an LCR meter, and a precision source measurement unit (SMU); A slidingly connected protective door panel is provided at the top of the test cabinet, and the protective door panel is symmetrically distributed at the top of the test cabinet, and a universal wheel is provided at the bottom of the test cabinet, and a fixed frame is provided inside the test cabinet, and a symmetrically distributed slide is provided at the bottom end of the fixed frame, one end of the slide is connected to a driving plate, and a driving plate is provided at the top of the fixed frame, and a probe plate is installed at one end of the driving plate, and one end of the slide is connected to a placement plate, and a sample to be tested is provided at the top of the placement plate, and a positioning column is provided at the end of the placement plate close to the sample to be tested, and an isolation plate is provided at the bottom end of the placement plate, and a cross plate is provided at the bottom end of the isolation plate with a welded connection.

[0006] Preferably, a first fixing frame is provided at one end of the placement plate close to the isolation plate, and a second fixing frame is provided at one end of the placement plate away from the first fixing frame.

[0007] Preferably, a driving motor is installed at one end of the first fixing frame, and an output end of the driving motor is connected to a rotating rod via a coupling.

[0008] Preferably, a rotating rod connected via a bearing is provided inside the first fixed frame and the second fixed frame, and a bevel gear set is connected between the rotating rod and the rotation rod.

[0009] Preferably, a first gear is provided at one end of the rotating rod close to the bevel gear set, and a second gear is provided at one end of the rotating rod away from the first gear.

[0010] Preferably, a rack is provided on one side of the isolation plate close to the first gear and the second gear, and the racks are symmetrically distributed on both sides of the transverse plate.

[0011] Preferably, a connecting pipe is provided at the bottom end of the horizontal plate, one side of the connecting pipe is connected to the gas pipe, and a connecting pipe passing through the horizontal plate is provided at the top end of the connecting pipe.

[0012] Preferably, the test circuit module includes an HTRB high temperature reverse bias test module, an HTRB high temperature gate bias test module, a DRB dynamic reverse bias test module, a DGB dynamic gate bias test module, and a PC power cycle test module.

[0013] Compared with the prior art, the present invention has the following beneficial effects: The SiC MOSFET dynamic and static characteristics testing device first places a sample to be tested on the top of a placement plate and can be positioned by a positioning column. At the same time, a driving plate is installed on the top of a fixing frame, and a probe plate is installed on the top of the driving plate. Then the driving motor is started, so that the rotating rod can rotate the rotating rod through a bevel gear set, and then the rotating rod can rotate through a first gear and a second gear, so that the isolation plate can be moved through a rack and the placed sample to be tested is protected. Then, the placement plate slides on the surface of a slide table, so that the placement plate can move the sample to be tested set on the top when moving. Then, the extended isolation plate can contact the top of the fixing frame. At the same time, the air supply pipe can be connected to the refrigeration component through a pipeline, so that the connecting pipe can input cold air into the interior of the isolation plate, so that the sample to be tested can be cooled. When the SiC MOSFET dynamic and static characteristics testing device is used, it not only has a good multiple separation effect, but also has a good cooling effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention; Figure 2 This is a schematic diagram of the three-dimensional structure of the placement plate of the present invention; Figure 3 Schematic diagram of the three-dimensional structure of the fixing frame of the present invention; Figure 4 Schematic diagram of the three-dimensional structure of the connecting pipe of the present invention; Figure 5 Schematic diagram of the three-dimensional structure of the isolation plate of the present invention; Figure 6 For the present invention Figure 5 A schematic diagram of the partially enlarged structure at center A; Figure 7 Schematic diagram of different drive plate structures in the present invention; Figure 8 This is a schematic diagram of the structure of the dynamic and static test modules in the present invention; Figure 9 This is a schematic diagram of the test circuit module structure in the present invention; Figure 10 Schematic diagram of the three-level topology supported by the dynamic and static tests in the present invention.

[0015] In the figure: 1. Test cabinet; 2. Protective door panel; 3. Universal wheel; 4. Fixed frame; 5. Slide; 6. Drive plate; 7. Probe plate; 8. Placement plate; 9. Sample to be tested; 10. Positioning column; 11. Isolation plate; 12. Horizontal plate; 13. First fixed frame; 14. Second fixed frame; 15. Drive motor; 16. Rotating rod; 17. Rotating rod; 18. Bevel gear set; 19. First gear; 20. Second gear; 21. Rack; 22. Connecting pipe; 23. Gas pipe; 24. Connecting pipe. DETAILED DESCRIPTION

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0017] See also Figures 1-6 The present invention provides a technical solution: a SiC A MOSFET dynamic and static characteristics testing device includes a test cabinet 1, a protective door panel 2 and a universal wheel 3. The top of the test cabinet 1 is provided with a slidingly connected protective door panel 2, which is symmetrically distributed at the top of the test cabinet 1. The bottom of the test cabinet 1 is provided with a universal wheel 3. A fixed frame 4 is provided inside the test cabinet 1. The bottom end of the fixed frame 4 is provided with a symmetrically distributed slide 5. The slide 5 is symmetrically distributed at the bottom end of the fixed frame 4. One end of the slide 5 is connected to a driving plate 6. The top of the fixed frame 4 is provided with a driving plate 6. A probe plate 7 is installed at one end of the driving plate 6. One end of the slide 5 is connected to a placement plate 8. The top of the placement plate 8 is provided with a sample to be tested 9. A positioning column 10 is provided at the end of the placement plate 8 close to the sample to be tested 9. The positioning column 10 is symmetrically distributed at the top of the placement plate 8. The bottom end of the placement plate 8 is provided with a through-connected isolation plate 11. There are three isolation plates 11, and the diameters gradually decrease. The bottom end of the isolation plate 11 is provided with a welded cross plate 12.

[0018] The whole system is tested through dynamic and static test modules and test circuit modules; like Figure 8 As shown, the dynamic and static test module includes an oscilloscope, a signal source, a chassis, an LCR meter, and a precision source measurement unit SMU; Oscilloscope NI PXle-5162: 1.5 GHz bandwidth, 5 GS / s sampling, 10-bit resolution; Signal source NI PXle-5413: 20M bandwidth, +-12V, 2CH; Chassis NIPXI-1092: High-precision synchronization, isolated backplane, and anti-interference endorsement for signal acquisition. Optical isolation probe: DC-1GHz, common mode rejection ratio 160dB, common mode voltage 60kVPK. High-voltage differential probe: 50-100MHz, 700-1300Vpk. Rogowski coil current probe: Rogowski coil can measure AC currents of hundreds or even thousands of amperes. High-voltage source: Maximum 3300V. Optional. PXle-4190 (static test): Tests the inductance, capacitance, and resistance (LCR) of electronic devices. It includes an LCR meter with fF-level capacitance measurement and a precision source measure unit (SMU) with fA-level current measurement.

[0019] like Figure 9 As shown, the test circuit module includes HTRB high temperature reverse bias test module, HTRB high temperature gate bias test module, DRB dynamic reverse bias test module, DGB dynamic gate bias test module, and PC power cycle test module: High-temperature reverse bias testing is mainly used to verify the leakage current of the chip under long-term stability. The test object is the weakness or degradation effect of the IGBT edge structure and passivation layer. The test standard is: IEC60747-9, and the test conditions are: 1000 hours, 95% VCE (max), 125°C <Tc<145C; The high-temperature gate reverse bias test is mainly used to verify the stability of the gate leakage current. The test object is the IGBT gate oxide layer. The test standard is IEC60747-9. The test conditions are: 1000 hours, VGE = +20V (both the + and - directions need to be tested, with half of the samples tested in each direction), Tj = Tj (max); High temperature and high humidity reverse bias test, also known as double 85 test, is mainly used to test the effect of humidity on the long-term characteristics of power devices. Test standard: IEC60068-2-67, test conditions: 1000 hours, ambient temperature 85°C, relative humidity 85%, VCE = 80V; High-temperature storage test and low-temperature storage test are mainly used to verify the integrity of the overall structure and materials of the module and ensure the insulation from the baseboard. For example, plastic housing, silicone, chip passivation material, ceramic in DCB, rubber material, etc. Test standard: high temperature IEC60068-2-2 low temperature IEC60068-2-1 test conditions: high temperature 1000 hours, ambient temperature: 125℃; low temperature 1000 hours, ambient temperature: -40℃; Thermal cycling testing primarily simulates the effects of external temperature fluctuations on power modules. The sample is periodically moved up and down between a cooling chamber and a heating chamber. The test device is passively cooled and heated. To ensure thermal equilibrium is achieved for each layer of material, the cycle time is relatively long. No voltage or current is applied during the test. Test standard: IEC60068-2-14. Test conditions: minimum storage temperature: -40°C, maximum storage temperature: 125°C, for a total of 100 cycles. In contrast to temperature cycling, power cycling actively heats the test sample to the target maximum temperature by passing current through the semiconductor. The current is then turned off, and the sample actively cools to its lowest temperature. Cycle times are relatively short, lasting only a few seconds. During thermal expansion, the pins connecting the chip and the solder connections to the DCB are subject to the greatest stress, as the chip is at its highest temperature. Test standard: IEC60749-34, test conditions: ATj = 100K, for a total of 20,000 cycles.

[0020] The SiC MOSFET dynamic and static characteristics testing device can protect the placed sample 9 to be tested by means of three isolation plates 11 with different diameters, thereby achieving a multiple isolation effect and avoiding errors in detection at high temperatures.

[0021] exist Figure 6 In the figure, a first fixed frame 13 is provided at one end of the placement plate 8 close to the isolation plate 11, and a second fixed frame 14 is provided at one end of the placement plate 8 away from the first fixed frame 13. A drive motor 15 is installed at one end of the first fixed frame 13, and the output end of the drive motor 15 is connected to a rotating rod 16 through a coupling.

[0022] In the SiC MOSFET dynamic and static characteristics testing device, the driving motor 15 is provided to provide power to the rotating rod 16 so as to realize the rotation of the rotating rod 16 , and the first fixing frame 13 is provided to provide an installation position for the driving motor 15 .

[0023] exist Figure 4 In the figure, a rotating rod 17 connected by a bearing is provided inside the first fixed frame 13 and the second fixed frame 14, a bevel gear set 18 is connected between the rotating rod 17 and the rotating rod 16, a first gear 19 is provided at one end of the rotating rod 17 close to the bevel gear set 18, and a second gear 20 is provided at the end of the rotating rod 17 away from the first gear 19.

[0024] This SiC MOSFET dynamic and static characteristics testing device can rotate the connected rotating rod 17 through the setting of the bevel gear set 18. Since the first gear 19 and the second gear 20 are symmetrically distributed on the surface of the rotating rod 17, the first gear 19 and the second gear 20 can be rotated synchronously through the rotation of the rotating rod 17.

[0025] exist Figure 4 and Figure 6 In the figure, a rack 21 is provided on one side of the isolation plate 11 close to the first gear 19 and the second gear 20, and the racks 21 are symmetrically distributed on both sides of the horizontal plate 12. A connecting pipe 22 is provided at the bottom end of the horizontal plate 12, and a gas pipe 23 is connected to one side of the connecting pipe 22. A connecting pipe 24 that passes through the horizontal plate 12 is provided at the top of the connecting pipe 22, and the connecting pipes 24 are symmetrically distributed at the top of the connecting pipe 22.

[0026] The SiC MOSFET dynamic and static characteristics testing device is connected to the bottom end of the isolation plate 11 through the connecting pipe 24, so that cold air can be input, thereby having a better cooling effect.

[0027] First, the sample to be tested 9 is placed on the top of the placement plate 8 and can be positioned by the positioning column 10. At the same time, a driving plate 6 is installed on the top of the fixing frame 4, and a probe plate 7 is installed on the top of the driving plate 6. Then the driving motor 15 is started, so that the driving motor 15 can rotate the rotating rod 16 connected to the output end, so that the rotating rod 16 can rotate the connected bevel gear set 18 when rotating, so that the bevel gear set 18 can rotate the connected rotating rod 17 when rotating, and then the rotating rod 17 can rotate the connected first gear 19 and the second gear 20 when rotating, so that the second gear 20 and the first gear 19 can rotate synchronously, and a uniformly distributed rack 21 is provided on one side of the isolation plate 11, so that the second gear 20 and the first gear 19 can move the connected isolation plate 11 when rotating, so that the isolation plate 11 can move upward and protect the placed sample to be tested 9, and then slide on the surface of the slide 5 through the placement plate 8. , so that the placement plate 8 can move the sample to be tested 9 set at the top when it moves, and then the extended isolation plate 11 can contact the top of the fixed frame 4, and a telescopic cylinder is installed at the bottom of the placement plate 8, so that the installed sample to be tested 9 can be moved, and then it can contact the driving plate 6 and the probe plate 7, and at the same time, the air supply pipe 23 can be connected to the refrigeration component through a pipeline. The refrigeration component consists of a compressor, a condenser, an expansion valve and an evaporator, so that the produced cold air can enter the inside of the connecting pipe 22 through the air supply pipe 23, and then the cold air is input into the interior of the isolation plate 11 through the connecting pipe 24, so that the sample to be tested 9 can be cooled, ensuring that the sample to be tested 9 can have a better processing environment during processing. At the same time, the isolation plates 11 are evenly distributed on the top of the horizontal plate 12, and the diameter gradually decreases, so that the sample to be tested 9 placed inside can be multi-partitioned, and thus it can have a better isolation effect when testing in a high temperature environment, and the output cold air can have a better cooling effect, so that the SiC The MOSFET dynamic and static characteristics test device not only has a good multiple separation effect when in use, but also has a good cooling effect.

[0028] In summary, silicon carbide is a semiconductor material with excellent performance. Compared with traditional silicon materials, SiC has higher breakdown voltage, lower conduction loss, higher thermal conductivity and wider operating temperature range. By starting the drive motor 15, the rotating rod 16 connected to the output end rotates, so that the rotating rod 16 can rotate the rotating rod 17 through the connected bevel gear set 18 when rotating, and then the rotating rod 17 can rotate the connected first gear 19 when rotating, so that the first gear 19 can move the isolation plate 11 through the rack 21 when rotating, so that the isolation plate 11 can protect the placed sample 9 to be tested, and the number of isolation plates 11 is three, so that multiple separations can be achieved, and the cold air delivered is input into the interior of the isolation plate 11 through the connecting pipe 24, so that it not only has better multiple isolation effects during testing, but also has better cooling effects. The content not described in detail in this description belongs to the existing technology known to professional and technical personnel in this field.

[0029] like Figure 7 As shown, different fixture carriers and upper pressure plates (driver plates) are used for different packaged products. Double pulse tests of different packaged products are achieved through quick-change fixtures. Different upper needle plates are replaced for different driver boards.

[0030] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A SiC MOSFET dynamic and static characteristics test device, comprising a test cabinet (1), a protective door panel (2) and a universal wheel (3), characterized in that: It also includes dynamic and static test modules and test circuit modules; The dynamic and static test module includes an oscilloscope, a signal source, a chassis, an LCR meter, and a precision source measurement unit (SMU); The top of the test cabinet (1) is provided with a slidingly connected protective door panel (2), and the protective door panel (2) is symmetrically distributed at the top of the test cabinet (1). The bottom of the test cabinet (1) is provided with a universal wheel (3). The interior of the test cabinet (1) is provided with a fixed frame (4), and the bottom of the fixed frame (4) is provided with a symmetrically distributed slide (5), one end of the slide (5) is connected to a drive plate (6), the top of the fixed frame (4) is provided with a drive plate (6), and one end of the drive plate (6) is installed with a probe plate (7), one end of the slide (5) is connected to a placement plate (8), the top of the placement plate (8) is provided with a sample to be tested (9), and the end of the placement plate (8) close to the sample to be tested (9) is provided with a positioning column (10), the bottom end of the placement plate (8) is provided with a through-connected isolation plate (11), and the bottom end of the isolation plate (11) is provided with a welded cross plate (12).

2. A SiC MOSFET dynamic and static characteristics testing device according to claim 1, characterized in that: A first fixing frame (13) is provided at one end of the placement plate (8) close to the isolation plate (11), and a second fixing frame (14) is provided at one end of the placement plate (8) away from the first fixing frame (13).

3. A SiC MOSFET dynamic and static characteristics testing device according to claim 2, characterized in that: A driving motor (15) is installed at one end of the first fixed frame (13), and an output end of the driving motor (15) is connected to a rotating rod (16) via a coupling.

4. A SiC MOSFET dynamic and static characteristics testing device according to claim 3, characterized in that: A rotating rod (17) connected via a bearing is provided inside the first fixed frame (13) and the second fixed frame (14), and a bevel gear set (18) is connected between the rotating rod (17) and the rotating rod (16).

5. A SiC MOSFET dynamic and static characteristics testing device according to claim 4, characterized in that: A first gear (19) is provided at one end of the rotating rod (17) close to the bevel gear set (18), and a second gear (20) is provided at one end of the rotating rod (17) away from the first gear (19).

6. A SiC MOSFET dynamic and static characteristics testing device according to claim 2, characterized in that: A rack (21) is provided on one side of the isolation plate (11) close to the first gear (19) and the second gear (20), and the racks (21) are symmetrically distributed on both sides of the transverse plate (12).

7. The SiC MOSFET dynamic and static characteristics testing device according to claim 1, characterized in that: A connecting pipe (22) is provided at the bottom end of the transverse plate (12), one side of the connecting pipe (22) is connected to a gas transmission pipe (23), and a connecting pipe (24) passing through the transverse plate (12) is provided at the top end of the connecting pipe (22).

8. The SiC MOSFET dynamic and static characteristics testing device according to claim 1, characterized in that: The test circuit modules include HTRB high temperature reverse bias test module, HTRB high temperature gate bias test module, DRB dynamic reverse bias test module, DGB dynamic gate bias test module, and PC power cycle test module.

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