Low-power data storage method and system based on spintronics

Abstract

This invention relates to the field of data storage technology, specifically to a low-power data storage method and system based on spintronics. Spin current is generated in a spin-orbit coupled heterojunction through orthogonal electromagnetic field modulation. The heterojunction includes a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy. The spin current is injected into a storage cell, which includes a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. This invention improves the conversion efficiency of spin-orbit torque by jointly modulating the orthogonal electromagnetic fields of the spin-orbit coupled heterojunction to form a non-orthogonal angle between the polarization direction of the spin Hall current and the magnetization direction of the ferromagnetic layer. Simultaneously, gradient doping technology optimizes the interface spin relaxation time, enabling the spin diffusion length to exceed the physical limits of traditional heterojunctions.

Description

Technical Field

[0001] This invention relates to the field of data storage technology, specifically to a low-power data storage method and system based on spintronics. Background Technology

[0002] The core challenge of spintronic memory devices lies in achieving low-power, high-density, and stable magnetization reversal operations. Traditional approaches primarily rely on the spin-orbit moment (SOT) effect to control the magnetization direction of the ferromagnetic layer, but they face two fundamental bottlenecks: first, the spin current generation efficiency is limited by the spin Hall angle of the heavy metal layer and interface scattering losses, making it difficult to further reduce the driving current density; second, in multi-cell collaborative operation, phase detuning and decoherence effects of spin wave propagation significantly reduce parallel write accuracy. More critically, the stability of the magnetization state in existing technologies depends on the non-volatile mechanism of a single energy barrier, while thermal fluctuations and quantum tunneling effects easily induce random reversal errors. Especially when the memory cell size shrinks to the nanoscale, the spin transport anisotropy and the uncontrollability of the dynamic behavior of magnetic domain walls in traditional magnetic tunnel junction (MTJ) structures have become the core contradictions restricting device performance improvement. Therefore, how to achieve efficient spin current control, multi-cell quantum state collaborative operation, and topology-protected magnetization state locking at the sub-nanometer scale is a technical challenge that urgently needs to be overcome in this field. Summary of the Invention

[0003] This disclosure proposes a low-power data storage method and system based on spintronics, aiming to overcome at least one of the defects existing in the prior art.

[0004] To achieve the above objectives, the technical solution disclosed in this invention is as follows:

[0005] According to one aspect of this disclosure, a low-power data storage method based on spintronics is provided. The method includes the following steps: generating a spin current in a spin-orbit coupled heterojunction by orthogonal electromagnetic field modulation, the heterojunction comprising a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy; injecting the spin current into a storage cell and inducing magnetization reversal through a spin momentum locking effect, the storage cell comprising a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer; detecting the magnetization state of the ferromagnetic free layer through an asymmetric double-barrier tunnel junction and dynamically reconstructing the spin current polarization direction based on the detection result; coordinating the operation of the storage array through a spatiotemporally entangled spin wave field, the phase distribution of the spin wave field being constrained by quantum interference conditions; triggering a topological state transition of the magnetic domain wall during the non-volatile storage stage and locking the storage state using an antiferromagnetic exchange bias field.

[0006] Furthermore, the steps for generating spin current in a spin-orbit coupled heterojunction by orthogonal electromagnetic field modulation include:

[0007] An alternating electric field parallel to the interface is applied to the heavy metal layer to excite a spin Hall current with spatial phase modulation.

[0008] The magnetization direction of the ferromagnetic layer is pre-aligned by a static magnetic field in the vertical direction, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer.

[0009] Gradient doping technology is used to optimize the spin relaxation time at the heterojunction interface, so that the spin diffusion length is greater than the feature size of the memory cell.

[0010] Furthermore, the steps to achieve the spin momentum locking effect include:

[0011] Establish the combined action equations of spin-orbit torque and magnetic anisotropy:

[0012] Where η is the interface spin-transformation efficiency and m is the magnetization vector. m is a unit vector pointing in the z-axis direction. z 2 Let J be the component of the magnetization vector in the z-direction, ∇ be the gradient operator, and J be the component of the magnetization vector in the z-direction. s K is the spin flow density. u Γ is the vertical anisotropy constant, and Γ is the topological stability coefficient;

[0013] Solve the energy extrema of the combined action equation to determine the boundary between the steady-state and unsteady-state solutions of the magnetization vector m;

[0014] By controlling the spatial gradient of the spin current density, a magnetic vortex array with topological protection is formed in the ferromagnetic free layer.

[0015] Furthermore, the steps for forming a magnetic vortex array include:

[0016] Periodic groove structures are fabricated on the surface of a ferromagnetic free layer, with groove depths satisfying the following:

[0017] , where n is odd, λ s λ is the wavelength of the spin wave, and d is the groove depth.

[0018] Non-uniform DM interaction is induced by spin flow density gradient;

[0019] The chiral distribution of magnetic vortices was monitored in real time using a Lorentz microscope, and the spin flow injection mode was adjusted accordingly.

[0020] Furthermore, the steps for constructing a spacetime entangled spin wave field include:

[0021] The storage array is modeled as a two-dimensional quantum Ising lattice system, and its Hamiltonian is expressed as:

[0022] , where J ij For spin-spin exchange, h x For the transverse quantum tunneling field, h z (t) represents the time-dependent longitudinal control field. and Let i and j be the longitudinal spin projection operators for lattice points i and j, respectively. It is a transverse spin projection operator;

[0023] The ground state wave function of the Hamiltonian is solved by the adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase.

[0024] A ring boundary condition is applied at the edge of the storage array to form an arbitrary sub-excited state with fractional statistical properties in the spin wave field;

[0025] The adiabatic evolution algorithm includes:

[0026] Initialize the longitudinal control field h z (0)=0, neglecting the effect of the exchange interaction strength on the transverse quantum tunneling field;

[0027] h increases slowly in an exponential decay manner z (t), when the system evolves to h z (t)≫J ij At that time, the magnetization direction of each grid point is locked to the target storage state.

[0028] Furthermore, the asymmetric double-barrier tunnel junction comprises: a first barrier layer of MgO with a thickness of 0.8-1.2 nm; and a second barrier layer of AlO. X The thickness is 1.5-2.0 nm; monolayer graphene is inserted between the barrier layers as a quantum well to enhance the anisotropy of spin-related tunneling probability.

[0029] Furthermore, the steps for realizing the topological state transition of magnetic domain walls include:

[0030] Construct a gradient-varying magnetic anisotropy distribution in a ferromagnetic free layer;

[0031] Skyrmion-anti-skyrmion pairs are generated by inducing magnetic domain walls through current pulses;

[0032] The motion path of the magnetic domain wall is encoded into binary information using the principle of topological charge conservation.

[0033] Furthermore, the method also includes the following steps: embedding superconducting nanowire single-photon detectors between storage cells to monitor quantum fluctuations during magnetization reversal; dynamically optimizing spin current injection parameters based on the statistical characteristics of quantum fluctuations; and triggering an error correction coding mechanism to rewrite data when a macroscopic quantum tunneling event is detected.

[0034] Furthermore, the method also includes the following steps: integrating a plasmonic nanoantenna array on the surface of the storage array to enhance the coupling efficiency between the spin wave and the optical field; achieving spin wave phase modulation at the subwavelength scale by exciting the plasmonic local field with femtosecond laser pulses; and verifying the fidelity of the spin wave entangled state using quantum correlation measurement technology.

[0035] According to another aspect of this disclosure, a spintronics-based low-power data storage system is provided for implementing the above-described spintronics-based low-power data storage method. The data storage system includes:

[0036] The spin current generation module includes a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device, used to generate spatially modulated spin polarization current.

[0037] A memory cell array includes multiple memory cells, each memory cell comprising a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer, wherein the topological insulator layer induces topologically protected spin transport channels;

[0038] The quantum state detection module integrates an asymmetric double-barrier tunnel junction and a superconducting quantum interference device for reading the magnetization state;

[0039] A cooperative operation controller is configured to generate a spacetime entangled spin wave field and synchronously control multiple storage units through quantum interference effects;

[0040] A topology locking device, comprising an antiferromagnetic exchange bias layer and a current drive circuit, is used to lock the magnetization state to the topology configuration with the lowest energy.

[0041] The beneficial effects of this invention are:

[0042] This invention enhances the conversion efficiency of spin-orbit torque by jointly controlling the orthogonal electromagnetic fields of a spin-orbit coupled heterojunction, forming a non-orthogonal angle between the polarization direction of the spin Hall current and the magnetization direction of the ferromagnetic layer. Simultaneously, gradient doping technology optimizes the interface spin relaxation time, allowing the spin diffusion length to break through the physical limits of traditional heterojunctions. A topological insulator layer is introduced as a spin transport channel, utilizing its topologically protected surface states to suppress bulk scattering losses. Combined with the quantum well structure of an asymmetric double-barrier tunnel junction, strong anisotropy of the spin-related tunneling probability is achieved, thereby improving the detection sensitivity of the magnetization state to the single-domain level. The construction of the spatiotemporally entangled spin wave field is achieved through an adiabatic evolution algorithm of the quantum Ising model, transforming multi-memory cell operations into a phase modulation problem of the ground state wave function. The nonlocality of fractional statistical anyons overcomes the phase detuning defect of traditional spin wave interference, achieving parallel writing with sub-nanosecond precision. The domain wall topological state transition mechanism encodes information through the topological charge conservation properties of skyrmion-antiskyrmion pairs, combined with the pinning effect of the antiferromagnetic exchange bias field, thereby increasing the energy barrier height of the stored state by an order of magnitude and fundamentally suppressing thermal flips and quantum tunneling noise.

[0043] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the following describes the preferred embodiments of the present invention in detail with reference to the accompanying drawings. Attached Figure Description

[0044] Figure 1 This is a flowchart of a low-power data storage method based on spintronics in one embodiment of the present invention;

[0045] Figure 2 This is a schematic diagram of the spatial modulation of spin current density and the phase distribution of spin polarization direction in one embodiment of the present invention;

[0046] Figure 3 This is a schematic diagram of the chiral distribution of magnetic vortexes in one embodiment of the present invention;

[0047] Figure 4 This is a schematic diagram of the spin wave entanglement phase distribution in one embodiment of the present invention;

[0048] Figure 5 This is a schematic diagram of the topological charge distribution of skyrmions in one embodiment of the present invention;

[0049] Figure 6 This is a schematic diagram of the asymmetric barrier tunneling characteristics in one embodiment of the present invention;

[0050] Figure 7 This is a schematic diagram of the magnetic anisotropy gradient distribution in one embodiment of the present invention. Detailed Implementation

[0051] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0052] The term "comprising," and any variations thereof, used in the specification and claims of this application, is intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or apparatus. Furthermore, the use of "and / or" in the specification and claims indicates at least one of the connected objects, such as A and / or B, indicating the inclusion of A alone, B alone, or both A and B.

[0053] In embodiments of the present invention, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design described as "exemplary" or "for example" in embodiments of the present invention should not be construed as being more preferred or advantageous than other embodiments or designs. Rather, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0054] The present invention provides the following preferred embodiments.

[0055] Example 1

[0056] To address the technical challenges of low-power and high-density storage in existing spintronic memory devices, this embodiment proposes a low-power data storage method based on spintronics. Specifically, this embodiment generates a spin current in a spin-orbit coupled heterojunction using orthogonal electromagnetic field manipulation, and injects this spin current into a memory cell with a specific structure, achieving efficient magnetization reversal and non-volatile storage. Figure 1 As shown, the flow of the low-power data storage method based on spintronics is as follows:

[0057] S100. Spin current is generated in a spin-orbit coupled heterojunction by orthogonal electromagnetic field modulation. The heterojunction includes a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy.

[0058] S200. A spin current is injected into the memory cell to induce magnetization reversal through the spin momentum locking effect. The memory cell includes a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer.

[0059] S300 detects the magnetization state of the ferromagnetic free layer through an asymmetric double-barrier tunnel junction and dynamically reconstructs the spin current polarization direction based on the detection results.

[0060] S400: The storage array is operated in a coordinated manner through a spacetime entangled spin wave field, and the phase distribution of the spin wave field is constrained by quantum interference conditions.

[0061] S500 triggers topological state transitions of magnetic domain walls during the non-volatile storage phase and locks the storage state using an antiferromagnetic exchange bias field.

[0062] In a spin-orbit coupled heterojunction, a spin current is generated by applying orthogonal electromagnetic fields. The heterojunction consists of a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy. An alternating electric field parallel to the interface is applied to the heavy metal layer, exciting a spin Hall current with spatial phase modulation. Simultaneously, the magnetization direction of the ferromagnetic layer is pre-aligned by a perpendicular static magnetic field, resulting in an angle of 45° to 135° between the spin current polarization direction and the ferromagnetic layer magnetization direction. This design significantly enhances the conversion efficiency of the spin current, improving its injection efficiency and stability. It is important to understand that by controlling the angle between the spin current polarization direction and the ferromagnetic layer magnetization direction, the magnitude of the spin-orbit torque can be effectively adjusted, thereby achieving more efficient magnetization reversal.

[0063] Furthermore, the generated spin current is injected into the memory cell. The memory cell comprises a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. The topological insulator layer, acting as a spin transport channel, induces topologically protected spin transport paths, thereby suppressing scattering losses during spin current transmission. Through the spin momentum locking effect, the spin current induces magnetization reversal in the ferromagnetic free layer. The spin momentum locking effect is achieved through the combined action of spin-orbit torque and magnetic anisotropy.

[0064] Furthermore, the magnetization state of the ferromagnetic free layer is detected using an asymmetric double-barrier tunnel junction. Based on the detection results, the spin current polarization direction is dynamically reconstructed to achieve precise magnetization control. The design of the asymmetric double-barrier tunnel junction improves the sensitivity of magnetization state detection and ensures the accuracy of the detection results. It is important to understand that by dynamically reconstructing the spin current polarization direction, the spin current injection mode can be adjusted according to the detection results, thereby achieving more precise magnetization control.

[0065] Furthermore, the memory array is operated collaboratively through a spatiotemporally entangled spin wave field. The phase distribution of the spin wave field is constrained by quantum interference conditions. This design enables synchronous operation of multiple memory cells, improving the parallelism and accuracy of data writing. By constructing appropriate quantum interference conditions, it can be ensured that the phase distribution of the spin wave field meets the operational requirements of the memory array. It is understandable that through the collaborative operation of spatiotemporally entangled spin wave fields, simultaneous operation of multiple memory cells can be achieved, improving the overall performance of the memory system.

[0066] Finally, during the non-volatile storage phase, topological state transitions at the domain walls are triggered, and the storage state is locked using an antiferromagnetic exchange bias field. By constructing a gradient-varying magnetic anisotropy distribution, skyrmion-antiskyrmion pairs can be induced at the domain walls. The antiferromagnetic exchange bias field locks the magnetization state to the lowest-energy topological configuration, thus achieving stable non-volatile storage. It is important to understand that triggering topological state transitions at the domain walls enables high-density data storage, while the antiferromagnetic exchange bias field ensures the long-term stability of the storage state.

[0067] This embodiment achieves efficient and stable magnetization reversal and magnetization state detection. Simultaneously, by employing spatiotemporal entangled spin wave fields and magnetic domain wall topological state transition mechanisms, it enhances the parallel operation capability of the storage array and the stability of data storage. These combined techniques increase storage density and reduce energy consumption per write operation, thereby achieving low-power, high-density data storage.

[0068] Example 2

[0069] To address the issues of spin current generation and injection efficiency, this embodiment further optimizes the steps for generating spin current in a spin-orbit coupled heterojunction using orthogonal electromagnetic fields. Specifically, this embodiment excites a spatially phase-modulated spin Hall current by applying an alternating electric field parallel to the interface in the heavy metal layer, and pre-aligns the magnetization direction of the ferromagnetic layer using a vertical static magnetic field, resulting in an angle of 45° to 135° between the spin current polarization direction and the ferromagnetic layer magnetization direction. Furthermore, gradient doping techniques are employed to optimize the spin relaxation time at the heterojunction interface, ensuring that the spin diffusion length is greater than the feature size of the memory cell.

[0070] First, an alternating electric field parallel to the interface is applied to the heavy metal layer. For example... Figure 2 As shown, the frequency and amplitude of the alternating electric field are optimized to excite a spin Hall current with spatial phase modulation. This spatial phase modulation of the spin Hall current can be achieved by adjusting the parameters of the alternating electric field, thereby improving the conversion efficiency of the spin current. It is important to understand that the selection of the frequency and amplitude of the alternating electric field is crucial for the generation of the spin Hall current; appropriate parameters can significantly enhance the intensity and stability of the spin current.

[0071] Furthermore, the magnetization direction of the ferromagnetic layer is pre-aligned using a static magnetic field in the vertical direction. For example... Figure 2 As shown, the direction and intensity of the static magnetic field are precisely controlled so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. This angle selection maximizes the effect of spin-orbit torque, thereby more effectively inducing magnetization reversal. It can be understood that by adjusting the intensity and direction of the static magnetic field, the polarization direction of the spin current can be precisely controlled, thereby improving the efficiency and controllability of magnetization reversal.

[0072] Furthermore, gradient doping technology is employed to optimize the spin relaxation time at the heterojunction interface. By introducing gradient doping at the interface between the heavy metal layer and the ferromagnetic layer, the spin relaxation time can be effectively extended, thereby allowing the spin diffusion length to exceed the feature size of the memory cell. Specific methods for gradient doping include gradually increasing or decreasing the doping concentration at the interface to create a smooth doping gradient. This design can suppress scattering losses during spin current transport and improve the spin current injection efficiency. It is important to understand that the choice and implementation of the gradient doping technique have a significant impact on the spin relaxation time and spin diffusion length; a reasonable gradient distribution can significantly improve the spin current transport performance.

[0073] This embodiment achieves efficient and stable spin current generation and injection. By optimizing the parameters of the alternating electric and static magnetic fields, and employing gradient doping techniques, the conversion efficiency and transport performance of the spin current are improved. These combined techniques result in spintronic memory devices exhibiting excellent performance in low power consumption and high-density storage.

[0074] Example 3

[0075] To address the issue of achieving the spin momentum locking effect, this embodiment further refines the implementation steps. Specifically, this embodiment establishes a combined equation involving spin orbital torque and magnetic anisotropy, solves for the energy extrema of this equation, and determines the boundaries between the steady-state and unsteady-state solutions of the magnetization vector. Furthermore, by controlling the spatial gradient of the spin current density, a topologically protected array of magnetic vortices is formed in the ferromagnetic free layer.

[0076] First, establish the combined action equations of spin-orbit torque and magnetic anisotropy:

[0077] Where η is the interface spin-transformation efficiency, J s K is the spin flow density. u Let Γ be the vertical anisotropy constant, and Γ be the topological stability coefficient. Represents a unit vector, typically pointing in the z-axis direction, m z2 Let represent the component of the magnetization vector in the z-direction, and ▽ represent the gradient operator. By solving the energy extrema of this equation, the boundaries between the steady-state and unsteady-state solutions of the magnetization vector m can be determined. This design ensures the stability and controllability of magnetization reversals.

[0078] Furthermore, by solving the energy extrema of the combined action equation, the boundaries between the steady-state and unsteady-state solutions of the magnetization vector m are determined. Solving this equation using numerical simulation yields steady-state and unsteady-state solutions of the magnetization vector m under different conditions. These solutions describe the behavior of the magnetization vector under varying spin current densities and external magnetic fields. It is understandable that by solving for the energy extrema, the steady-state of the magnetization vector can be determined, thus guiding parameter selection in practical operations.

[0079] Furthermore, by manipulating the spatial gradient of the spin current density, a topologically protected array of magnetic vortices can be formed in the ferromagnetic free layer. Introducing a spatial gradient of the spin current density into the ferromagnetic free layer can induce a non-uniform magnetic vortex structure. This non-uniform structure is topologically protected and exhibits high stability. It is important to understand that the spatial gradient of the spin current density can be achieved using micro / nano fabrication techniques, such as by altering the distribution of the spin current density through local heating or local electric field manipulation.

[0080] This embodiment achieves a highly efficient spin momentum locking effect and forms a topologically protected magnetic vortex array within a ferromagnetic free layer. These combined techniques make the magnetization reversal process more stable and controllable, thereby improving the performance of the storage device.

[0081] Example 4

[0082] To address the formation problem of magnetic vortex arrays, this embodiment further optimizes the formation steps. Specifically, this embodiment prepares periodic groove structures on the surface of a ferromagnetic free layer, induces non-uniform DM interactions using spin flow density gradients, monitors the chiral distribution of the magnetic vortices in real time using a Lorentz microscope, and adjusts the spin flow injection mode accordingly.

[0083] First, a periodic groove structure is fabricated on the surface of the ferromagnetic free layer. The groove depth satisfies:

[0084] , where n is odd, λ s Let λ be the wavelength of the spin wave and d be the groove depth. This periodic groove structure guides the propagation path of the spin wave, thus forming an ordered array of magnetic vortices. It is important to understand that the choice of groove depth has a significant impact on the propagation characteristics of the spin wave; a suitable depth ensures that the propagation path of the spin wave conforms to expectations.

[0085] Furthermore, a non-uniform Dzyaloshinskii-Moriya interaction is induced using a spin current density gradient. By introducing a spatial gradient of spin current density into the ferromagnetic free layer, a non-uniform Dzyaloshinskii-Moriya interaction can be induced. This non-uniform Dzyaloshinskii-Moriya interaction can lead to changes in the chiral distribution of magnetic vortices, thereby forming an ordered array of magnetic vortices, such as... Figure 3 As shown. It is understandable that the spatial gradient of spin flux density can be achieved through micro / nano fabrication techniques, such as by altering the distribution of spin flux density through local heating or local electric field manipulation.

[0086] Furthermore, the chiral distribution of the magnetic vortex was monitored in real time using a Lorentz microscope, and the spin flow injection mode was adjusted accordingly. Figure 3 As shown, the Lorentz microscope can monitor the chiral distribution of magnetic vortices in real time and feed the monitoring results back to the control system, thereby dynamically adjusting the injection mode of the spin flow. This feedback mechanism ensures a more stable and controllable formation process for the magnetic vortex array. It is important to understand that the resolution and sensitivity of the Lorentz microscope have a significant impact on the accuracy of the monitoring results; high-resolution and high-sensitivity microscopes can provide more precise feedback information.

[0087] This embodiment achieves the formation of an ordered magnetic vortex array. The stability and controllability of the magnetic vortex array are ensured through the use of a periodic groove structure, a spin flow density gradient, and real-time monitoring and feedback via a Lorentz microscope.

[0088] Example 5

[0089] To address the problem of constructing a spacetime entangled spin wave field, this embodiment further optimizes the construction steps. Specifically, this embodiment models the storage array as a two-dimensional quantum Ising lattice system and obtains the optimal distribution of the spin wave phase by solving the ground state wave function of the Hamiltonian using an adiabatic evolution algorithm. Figure 4 As shown. Furthermore, a ring boundary condition is applied at the edge of the storage array to form arbitrary sub-excited states with fractional statistical properties in the spin wave field.

[0090] First, the storage array is modeled as a two-dimensional quantum Ising lattice system, whose Hamiltonian is expressed as:

[0091] , where J ij For spin-spin exchange, h x For the transverse quantum tunneling field, h z (t) represents the time-dependent longitudinal control field. and Here, are the longitudinal spin projection operators for lattice points i and j, respectively, used to describe the Isinger interaction between adjacent lattice points. This is a transverse spin projection operator used to introduce the quantum tunneling effect. It's important to understand that... This represents the summation over all adjacent grid points. This represents the summation over all grid points. The selection and setting of these parameters have a significant impact on the dynamic behavior of the system.

[0092] Furthermore, the ground-state wavefunction of the Hamiltonian is solved using an adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase. The adiabatic evolution algorithm includes initializing the longitudinal control field h. z (0)=0, transverse field h x The strength of h is much greater than that of the exchange interaction, therefore the effect of the exchange interaction strength on the transverse quantum tunneling field can be neglected. Then, h is slowly increased in an exponentially decaying manner. z (t), when the system evolves to h z (t)≫J ij At this point, the magnetization direction of each lattice point is locked to the target storage state. This adiabatic evolution process ensures a smooth transition of the system from the initial state to the final state, thereby obtaining the optimal distribution of the spin wave phase. Understandably, the key to the adiabatic evolution algorithm lies in the slowly changing control field to avoid non-adiabatic transitions in the system.

[0093] Furthermore, a ring boundary condition is applied at the edge of the storage array to cause the spin wave field to form arbitrary sub-excited states with fractional statistical properties. For example... Figure 4 As shown, the ring boundary condition can induce a closed topology of the spin wave field at the edge of the memory array. This topology has fractional statistical properties, which can resist local disturbances and thus improve the stability of the memory state. It is important to understand that the design of the ring boundary condition has a significant impact on the topological properties of the spin wave field, and a reasonable boundary condition can ensure the topological protection characteristics of the spin wave field.

[0094] This embodiment demonstrates the construction of a spacetime entangled spin wave field. Through modeling the two-dimensional quantum Ising lattice system, solving the adiabatic evolution algorithm, and applying toroidal boundary conditions, the optimal distribution of the spin wave phase and the stability of the stored state are ensured.

[0095] Example 6

[0096] To address the anisotropy issue of spin-dependent tunneling probability, this embodiment further optimizes the design of the asymmetric double-barrier tunnel junction. Specifically, this embodiment enhances the anisotropy of spin-dependent tunneling probability by using a first and second barrier layer of specific thicknesses and inserting a monolayer of graphene as a quantum well between the barrier layers.

[0097] First, the first barrier layer is made of MgO with a thickness of 0.8-1.2 nm. Understandably, MgO possesses a high dielectric constant and good lattice matching, effectively isolating the ferromagnetic free layer and the ferromagnetic reference layer, reducing direct tunneling effects, such as... Figure 6 As shown. It is important to understand that the choice of MgO thickness has a significant impact on the tunneling probability; an appropriate thickness can ensure that the probability of spin-related tunneling is maximized.

[0098] Furthermore, the second barrier layer uses AlO2. X The material has a thickness of 1.5-2.0 nm. That is, AlO₂. X It exhibits high insulation and low tunneling resistance, providing a stable tunneling path while maintaining high insulation. This design can further enhance the anisotropy of spin-dependent tunneling probability. Understandably, AlO X The choice of thickness has a significant impact on the stability of the tunnel path; a reasonable thickness can ensure the stability and controllability of the tunnel path.

[0099] Furthermore, a monolayer of graphene is inserted between the first and second barrier layers as a quantum well. Monolayer graphene possesses excellent electron transport properties and a highly tunable band structure, which can significantly enhance the anisotropy of spin-dependent tunneling probability. By adjusting the number of graphene layers and the doping concentration, the characteristics of the tunneling path can be further optimized. It is important to understand that the introduction of graphene not only enhances the anisotropy of the tunneling probability but also improves the spin coherence during the tunneling process.

[0100] This embodiment achieves efficient anisotropy of spin-correlated tunneling probability. This is achieved by optimizing MgO and AlO. X The thickness of the graphene and the introduction of monolayer graphene improve the stability and controllability of the tunneling path, thereby increasing the probability of spin-related tunneling.

[0101] Example 7

[0102] To address the issue of topological state transitions at magnetic domain walls, this embodiment further refines the implementation steps for these transitions. Specifically, this embodiment constructs a gradient-varying magnetic anisotropy distribution within the ferromagnetic free layer, induces skyrmion-antiskyrmion pairs at the domain walls using current pulses, and encodes the domain wall motion path into binary information using the principle of topological charge conservation.

[0103] First, a gradient-varying magnetic anisotropy distribution is constructed in the ferromagnetic free layer. For example... Figure 7As shown, a gradient-varying magnetic anisotropy distribution is introduced into a ferromagnetic free layer using micro-nano fabrication techniques. This gradient distribution can be achieved through methods such as local heating or ion implantation, thereby forming regions with different magnetic anisotropies. It is important to understand that the gradient-varying magnetic anisotropy distribution has a significant impact on the movement path of the domain walls; a reasonable gradient distribution can guide the orderly movement of the domain walls.

[0104] Furthermore, skyrmion-antiskyrmion pairs are generated by inducing the formation of magnetic domain walls using current pulses. For example... Figure 5 As shown, skyrmion-antiskyrmion pairs can be induced in a ferromagnetic free layer by applying a current pulse. The intensity and duration of this current pulse are precisely controlled to ensure the generation of skyrmion-antiskyrmion pairs. Understandably, the selection of current pulse parameters has a significant impact on the generation efficiency of skyrmion-antiskyrmion pairs; suitable parameters can significantly improve the generation efficiency.

[0105] Furthermore, the motion path of the magnetic domain walls is encoded into binary information using the principle of topological charge conservation. For example... Figure 5 As shown, by monitoring the motion path of skyrmion-anti-skyrmion pairs, they can be encoded into binary information. The principle of topological charge conservation ensures the high stability and predictability of the motion path of skyrmion-anti-skyrmion pairs, thus ensuring the accuracy of information encoding. It is important to understand that the application of the topological charge conservation principle gives the motion path of magnetic domain walls a high degree of topological protection, thereby improving the reliability and stability of information encoding.

[0106] This embodiment achieves efficient topological state transitions of magnetic domain walls. By constructing a gradient-varying magnetic anisotropy distribution, inducing skyrmion-anti-skyrmion pair generation through current pulses, and applying the principle of topological charge conservation, the high stability and predictability of the magnetic domain wall motion path are ensured.

[0107] Example 8

[0108] To address the quantum fluctuation problem during magnetization reversal, this embodiment further optimizes the method for monitoring and dynamically optimizing spin current injection parameters. Specifically, this embodiment embeds superconducting nanowire single-photon detectors between storage cells to monitor quantum fluctuations during magnetization reversal and dynamically optimizes spin current injection parameters based on the statistical characteristics of quantum fluctuations; when a macroscopic quantum tunneling event is detected, an error correction coding mechanism is triggered to rewrite the data.

[0109] First, superconducting nanowire single-photon detectors are embedded between the storage cells. These detectors possess extremely high sensitivity and response speed, enabling real-time monitoring of quantum fluctuations during magnetization reversals. It is important to understand that the selection and placement of these superconducting nanowire single-photon detectors significantly impact the accuracy of the monitoring results; highly sensitive and fast-response detectors provide more precise monitoring data.

[0110] Furthermore, the spin current injection parameters are dynamically optimized based on the statistical properties of quantum fluctuations. By analyzing data collected by a superconducting nanowire single-photon detector, the statistical properties of quantum fluctuations can be obtained. Based on these statistical properties, the spin current injection parameters, such as spin current density and injection direction, can be dynamically adjusted to optimize the magnetization reversal process. It is understandable that dynamically optimizing the spin current injection parameters can significantly improve the stability and controllability of the magnetization reversal.

[0111] Furthermore, when a macroscopic quantum tunneling event is detected, an error correction coding mechanism is triggered to rewrite the data. By setting a threshold, when a macroscopic quantum tunneling event is detected, the system automatically triggers the error correction coding mechanism to rewrite the data to correct potential errors. This error correction mechanism ensures the integrity and reliability of the data. It is important to understand that the choice and implementation of the error correction coding mechanism has a significant impact on the success rate of data recovery; an efficient error correction mechanism can improve the success rate of data recovery.

[0112] This embodiment achieves effective monitoring and dynamic optimization of quantum fluctuations during magnetization reversal. By embedding a superconducting nanowire single-photon detector, dynamically optimizing spin flow injection parameters, and triggering an error correction coding mechanism, the stability and reliability of the data writing process are ensured.

[0113] Example 9

[0114] To address the issue of coupling efficiency between spin waves and optical fields, this embodiment further optimizes the method of integrating a plasmonic nanoantenna array on the surface of the storage array. Specifically, this embodiment enhances the coupling efficiency between spin waves and optical fields by integrating a plasmonic nanoantenna array, and achieves subwavelength-scale spin wave phase modulation by exciting the plasmonic local field with femtosecond laser pulses; the fidelity of the spin wave entangled state is verified using quantum correlation measurement technology.

[0115] First, a plasmonic nanoantenna array is integrated onto the surface of the storage array. Composed of metallic nanostructures, the plasmonic nanoantenna array enhances the localization effect of the optical field at the subwavelength scale. This design significantly improves the coupling efficiency between spin waves and the optical field. It is important to understand that the design and layout of the plasmonic nanoantenna array have a significant impact on the coupling efficiency; a reasonable layout can ensure highly efficient coupling.

[0116] Furthermore, plasmon local fields are excited using femtosecond laser pulses. Femtosecond laser pulses, with their extremely short pulse widths and high energy densities, can efficiently excite plasmon local fields. These local fields can achieve spin-wave phase modulation at subwavelength scales. Understandably, the selection of femtosecond laser pulse parameters has a significant impact on the excitation effect of the local field; suitable parameters can significantly improve the intensity and stability of the local field.

[0117] Furthermore, quantum correlation measurement technology is used to verify the fidelity of the spin-wave entangled state. This technology allows for real-time monitoring of the fidelity of the spin-wave entangled state. It provides high-precision fidelity data, ensuring the stability and reliability of the spin-wave entangled state. It is important to understand that the choice and implementation of the quantum correlation measurement technique significantly impacts the accuracy of the fidelity measurement; efficient techniques can significantly improve the accuracy of the fidelity measurement.

[0118] This embodiment achieves efficient coupling between spin waves and optical fields, and precise control of the spin wave phase at the subwavelength scale. By integrating plasmonic nanoantenna arrays, femtosecond laser pulse excitation of local fields, and quantum correlation measurement techniques, high fidelity of the spin wave entangled state is ensured. These techniques work together to enable the storage device to exhibit higher accuracy and reliability during data writing and reading.

[0119] Example 10

[0120] To address the overall performance issues of spintronic low-power data storage systems, this embodiment further optimizes the various modules of the spintronic-based low-power data storage system. Specifically, this embodiment achieves efficient and reliable low-power data storage by designing a spin current generation module, a storage cell array, a quantum state detection module, a cooperative operation controller, and a topology locking device.

[0121] First, the spin current generation module comprises a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device. By applying an alternating electric field parallel to the interface in the heavy metal layer, a spin Hall current with spatial phase modulation is excited. Simultaneously, a static magnetic field in the vertical direction pre-aligns the magnetization direction of the ferromagnetic layer, causing the spin current polarization direction to form an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. This design significantly enhances the spin current conversion efficiency and improves the injection efficiency and stability of the spin current. It is important to understand that the design of the spin current generation module has a significant impact on the performance of the entire system; appropriate parameter selection can significantly improve the spin current generation efficiency.

[0122] Furthermore, the memory cell array comprises multiple memory cells, each including a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer. The topological insulator layer, acting as a spin transport channel, induces topologically protected spin transport paths, thereby suppressing scattering losses during spin current transmission. This design ensures efficient spin current transmission within the memory cell.

[0123] Furthermore, the quantum state detection module integrates an asymmetric double-barrier tunneling junction and a superconducting quantum interference device (QFID). The asymmetric double-barrier tunneling junction comprises a first barrier layer and a second barrier layer, with a single layer of graphene inserted between the two layers as a quantum well. This structure enhances the anisotropy of the spin-correlated tunneling probability, improving the sensitivity of magnetization state detection. The superconducting QFID is used to read the magnetization state with high precision. It is important to understand that the design of the quantum state detection module has a significant impact on the accuracy and reliability of data reading; an efficient detection module can significantly improve reading accuracy.

[0124] Furthermore, the cooperative operation controller is configured to generate a spatiotemporally entangled spin wave field. By constructing suitable quantum interference conditions, the phase distribution of the spin wave field can be ensured to meet the operational requirements of the storage array. This design enables synchronous operation of multiple storage cells, improving the parallelism and accuracy of data writing. Understandably, the design of the cooperative operation controller has a significant impact on the efficiency and reliability of data writing; a well-designed controller can significantly improve write performance.

[0125] Furthermore, the topology-locking device includes an antiferromagnetic exchange bias layer and a current-driven circuit. By constructing a gradient-varying magnetic anisotropy distribution, skyrmion-antiskyrmion pairs can be induced at the domain walls. Utilizing the antiferromagnetic exchange bias field, the magnetization state is locked to the lowest-energy topological configuration, thereby achieving stable non-volatile storage. It is important to understand that the design of the topology-locking device has a significant impact on the long-term stability of data storage; a reasonable locking mechanism can significantly improve the stability of the stored state.

[0126] This embodiment achieves a highly efficient and reliable low-power data storage system. By optimizing the spin current generation module, storage cell array, quantum state detection module, cooperative operation controller, and topology locking device, high-density, high-precision, and high-stability data storage is ensured.

[0127] Although the present invention has been specifically described above with reference to preferred embodiments, it should be understood that the present invention is not limited to the embodiments described above. Various modifications and variations can be made by those skilled in the art without departing from the spirit of the present invention, and such modifications and variations should fall within the scope defined by the appended claims and their equivalents.

Claims

1. A low-power data storage method based on spintronics, characterized in that, The method includes the following steps: generating a spin current in a spin-orbit coupled heterojunction via orthogonal electromagnetic field modulation, wherein the heterojunction comprises a heavy metal layer and a ferromagnetic layer with perpendicular magnetic anisotropy; injecting the spin current into a memory cell and inducing magnetization reversal through a spin momentum locking effect, wherein the memory cell comprises a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer; detecting the magnetization state of the ferromagnetic free layer through an asymmetric double-barrier tunnel junction and dynamically reconstructing the spin current polarization direction based on the detection results; coordinating the operation of the memory array through a spatiotemporally entangled spin wave field, wherein the phase distribution of the spatiotemporally entangled spin wave field is constrained by quantum interference conditions; triggering a topological state transition of the magnetic domain wall during the non-volatile storage stage and locking the storage state using an antiferromagnetic exchange bias field; The steps to achieve the spin momentum locking effect include: Establish the combined action equations of spin-orbit torque and magnetic anisotropy: Where η is the interface spin-transformation efficiency and m is the magnetization vector. m is a unit vector pointing in the z-axis direction. z 2 Let J be the component of the magnetization vector in the z-direction, ∇ be the gradient operator, and J be the component of the magnetization vector in the z-direction. s K is the spin flow density. u Γ is the vertical anisotropy constant, and Γ is the topological stability coefficient; Solve the energy extremum point of the combined action equation to determine the boundary between the steady-state and unsteady-state solutions of the magnetization vector m; By controlling the spatial gradient of spin current density, a magnetic vortex array with topological protection is formed in the ferromagnetic free layer. The steps for constructing the spatiotemporal entangled spin wave field include: The storage array is modeled as a two-dimensional quantum Ising lattice system, and its Hamiltonian is expressed as: , where J ij For spin-spin exchange, h x For the transverse quantum tunneling field, h z (t) represents the time-dependent longitudinal control field. and Let i and j be the longitudinal spin projection operators for lattice points i and j, respectively. It is a transverse spin projection operator; The ground state wave function of the Hamiltonian is solved by the adiabatic evolution algorithm to obtain the optimal distribution of the spin wave phase; A ring boundary condition is applied at the edge of the storage array to form an arbitrary sub-excited state with fractional statistical properties in the spin wave field; The adiabatic evolution algorithm includes: Initialize the longitudinal control field h z (0)=0, neglecting the effect of the exchange interaction strength on the transverse quantum tunneling field; h increases slowly in an exponential decay manner z (t), when the system evolves to h z (t)≫J ij At that time, the magnetization direction of each grid point is locked to the target storage state.

2. The low-power data storage method based on spintronics as described in claim 1, characterized in that, The step of generating spin current in a spin-orbit coupled heterojunction by orthogonal electromagnetic field control includes: An alternating electric field parallel to the interface is applied to the heavy metal layer to excite a spin Hall current with spatial phase modulation. The magnetization direction of the ferromagnetic layer is pre-aligned by a static magnetic field in the vertical direction, so that the spin current polarization direction forms an angle of 45° to 135° with the magnetization direction of the ferromagnetic layer. Gradient doping technology is used to optimize the spin relaxation time at the heterojunction interface, so that the spin diffusion length is greater than the feature size of the memory cell.

3. The low-power data storage method based on spintronics as described in claim 1, characterized in that, The steps for forming the magnetic vortex array include: Periodic groove structures are fabricated on the surface of a ferromagnetic free layer, with groove depths satisfying the following: , where n is odd, λ s λ is the wavelength of the spin wave, and d is the groove depth. Non-uniform DM interaction is induced by spin flow density gradient; The chiral distribution of magnetic vortices was monitored in real time using a Lorentz microscope, and the spin flow injection mode was adjusted accordingly.

4. The low-power data storage method based on spintronics as described in claim 1, characterized in that, The asymmetric double-barrier tunnel junction comprises: a first barrier layer of MgO with a thickness of 0.8-1.2 nm; and a second barrier layer of AlO. X The thickness is 1.5-2.0 nm; monolayer graphene is inserted between the barrier layers as a quantum well to enhance the anisotropy of spin-related tunneling probability.

5. The low-power data storage method based on spintronics as described in claim 4, characterized in that, The steps for implementing the topological state transition of the magnetic domain walls include: Construct a gradient-varying magnetic anisotropy distribution in a ferromagnetic free layer; Skyrmion-anti-skyrmion pairs are generated by inducing magnetic domain walls through current pulses; The motion path of the magnetic domain wall is encoded into binary information using the principle of topological charge conservation.

6. The low-power data storage method based on spintronics as described in claim 1, characterized in that, The method further includes: embedding superconducting nanowire single-photon detectors between storage cells to monitor quantum fluctuations during magnetization reversal; dynamically optimizing spin current injection parameters based on the statistical characteristics of quantum fluctuations; and triggering an error correction coding mechanism to rewrite data when a macroscopic quantum tunneling event is detected.

7. The low-power data storage method based on spintronics as described in claim 1, characterized in that, The method further includes the following steps: integrating a plasmonic nanoantenna array on the surface of the storage array to improve the coupling efficiency between the spin wave and the optical field; exciting the localized plasmonic field with a femtosecond laser pulse to achieve spin wave phase modulation at the subwavelength scale; and verifying the fidelity of the spin wave entangled state using quantum correlation measurement technology.

8. A low-power data storage system based on spintronics, used to implement the low-power data storage method based on spintronics as described in any one of claims 1 to 7, characterized in that, The data storage system includes: The spin current generation module includes a heavy metal layer, a ferromagnetic heterojunction, and an orthogonal electromagnetic field application device, used to generate spatially modulated spin polarization current. A memory cell array includes multiple memory cells, each memory cell comprising a ferromagnetic free layer, a topological insulator layer, and a ferromagnetic reference layer, wherein the topological insulator layer induces topologically protected spin transport channels; The quantum state detection module integrates an asymmetric double-barrier tunnel junction and a superconducting quantum interference device for reading the magnetization state; A cooperative operation controller is configured to generate a spacetime entangled spin wave field and synchronously control multiple storage units through quantum interference effects; A topology locking device, comprising an antiferromagnetic exchange bias layer and a current drive circuit, is used to lock the magnetization state to the topology configuration with the lowest energy.

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