Substrate processing apparatus including recovery device

Abstract

A substrate processing apparatus with a recovery device includes a rotary table, a liquid supply device, and the recovery device. The rotating table is used for placing a substrate; the liquid supply device is arranged above the rotating table and is used for applying a plurality of process liquids to the substrate, and the plurality of process liquids comprise a first process liquid and a second process liquid; the recovery device is used for recovering the first process liquid and the second process liquid and comprises a first recovery ring and a second recovery ring; the first recycling ring is arranged around the rotating table in a surrounding manner and moves in the vertical direction relative to the rotating table; the second recovery ring is arranged around the rotary table in a surrounding manner, is arranged below the first recovery ring, and moves in the vertical direction relative to the rotary table. Therefore, the substrate treatment equipment with the recovery device can avoid the problem of cross contamination of recovered liquid medicine and wastewater.

Description

Technical Field

[0001] The present invention relates to a substrate processing device with a recovery device, and in particular to a substrate processing device capable of sequentially recovering process liquid used in cleaning the substrate. Background Art

[0002] In the semiconductor process, wafer cleaning is a critical process. If the contamination caused by processes such as wafer cutting or etching is not completely cleaned, the residual contaminants will seriously affect the subsequent processes and ultimately lead to a decrease in wafer yield.

[0003] Furthermore, splashing of cleaning fluid during cleaning can contaminate the chamber. For example, when cleaning wafers, cleaning fluids, such as deionized water, are used. If this cleaning fluid splashes onto components on the cleaning equipment, such as the recovery ring, it can contaminate other chemicals, such as cleaning and etching solutions, impacting the cleaning or etching process.

[0004] However, with the evolution of semiconductor technology, the structure of chips has become increasingly complex, with line width and line spacing becoming increasingly smaller, and the surface structure has become more three-dimensional, with a significantly increased aspect ratio. Figure 1 As shown, due to the deepening of the grooves 72 between the crystal grains 71, when the liquid is sprayed on the substrate, the high aspect ratio will make the substrate surface no longer flat, which will cause the liquid to splash easily. Furthermore, the opening size of the recovery rings 81 and 82 in conventional conductor processes is fixed and moves synchronously in the vertical direction. Therefore, the opening cannot be closed, causing adjacent recovery rings to easily cross-contaminate each other when recovering liquid. Therefore, it is not suitable for semiconductor processes with large height differences of components on the wafer surface. Therefore, a substrate processing equipment with a recovery device is needed to solve the above problems. Summary of the Invention

[0005] In order to solve the problems of the above-mentioned conventional technology, the present application provides a substrate processing equipment with a recovery device, which includes a turntable, a liquid supply device and a recovery device. The turntable is used to place the substrate; the liquid supply device is arranged above the turntable to apply a plurality of process liquids to the substrate, and the plurality of process liquids include a first process liquid and a second process liquid; the recovery device is used to recover the first process liquid and the second process liquid, and includes a first recovery ring and a second recovery ring; the first recovery ring is arranged around the turntable and moves in a vertical direction relative to the turntable; the second recovery ring is arranged around the turntable, is configured below the first recovery ring, and moves in a vertical direction relative to the turntable. The first recovery ring and the second recovery ring move in sequence in the vertical direction and form a first opening and a second opening in sequence. The first opening is formed between the first recovery ring and the second recovery ring, and the second opening is formed between the second recovery ring and the turntable.

[0006] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first recovery ring has a first ring wall and a stop wall, one end of the first ring wall is adjacent to the rotating table, and the other end is connected to the stop wall.

[0007] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first annular wall is arranged to be inclined relative to the rotating table.

[0008] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first thickness of the first annular wall gradually increases in a direction away from the rotating table.

[0009] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the second recovery ring has a second ring wall, a third ring wall and a fourth ring wall, the third ring wall is located between the second ring wall and the fourth ring wall, and the second ring wall is closer to the rotating table than the third ring wall and the fourth ring wall.

[0010] In a preferred embodiment of the substrate processing equipment with the recovery device of the present application, the second thickness of the second annular wall gradually increases in a direction away from the rotating table.

[0011] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, when the first opening is formed, the second annular wall is tightly matched with the side of the rotating table, and the second opening is closed.

[0012] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the first annular wall and the second annular wall are in close contact with each other, and the first opening is closed.

[0013] In a preferred embodiment of the substrate processing equipment with a recovery device of the present application, the third annular wall and the fourth annular wall are inclined in different directions and form a first groove with an opening toward the stop wall.

[0014] In a preferred embodiment of the substrate processing equipment of the present application having a recovery device, when the first recovery ring moves to the highest position in the vertical direction and the second recovery ring is at the lowest position, the first process liquid flows from the first opening into between the first recovery ring and the second recovery ring.

[0015] Preferably, the substrate processing equipment with a recovery device of the present application further includes a first recovery pipeline and a first recovery device. The first process liquid flows from between the first recovery ring and the second recovery ring to the first recovery pipeline and is recovered by the first recovery device.

[0016] Preferably, the substrate processing equipment with a recovery device of the present application further includes a fixed annular wall, which is disposed below the recovery device and forms a second groove with an opening facing the recovery device.

[0017] Preferably, when the first recovery ring and the second recovery ring move to the highest position in the vertical direction, the second process liquid flows from the second opening to the second groove.

[0018] Preferably, the substrate processing equipment with a recovery device of the present application further includes a second recovery pipeline and a second recovery device. The second process liquid flows from the second groove to the second recovery pipeline and is recovered by the second recovery device.

[0019] Preferably, the substrate processing equipment with the recovery device of the present application further includes a driving motor, which drives the rotating table to rotate and is disposed below the rotating table.

[0020] Preferably, the substrate processing equipment with a recovery device of the present application further includes a lifting drive device, which drives the first recovery ring and the second recovery ring to move up and down in the vertical direction.

[0021] In the present application, in addition to being able to rise and fall vertically to recover process chemicals, the recovery device can also move upward to align with the upper recovery ring when cleaning wafers with deionized water (DI Water), so that the chemical recovery port between the two can be tightly closed. This can prevent deionized water from spraying from the rotating wafer surface to other adjacent chemical recovery ports. Therefore, in the present application, the chemical collected by the chemical recovery ring is not easily contaminated and can then flow to the corresponding recovery pipeline for subsequent recovery or discharge, while the deionized water can be directly collected through the corresponding wastewater recovery pipe. The two are recovered through different pipelines, thereby avoiding the problem of cross-contamination between the recovered chemical and wastewater. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 A schematic diagram of a conventional substrate processing apparatus;

[0024] Figure 2 is a first top view of a substrate processing apparatus according to an embodiment of the present application;

[0025] Figure 3 is a first cross-sectional view of a substrate processing apparatus according to an embodiment of the present application;

[0026] Figure 4A is a second cross-sectional view of a substrate processing apparatus according to an embodiment of the present application;

[0027] Figure 4B is an enlarged cross-sectional view of a recovery device of a substrate processing apparatus according to an embodiment of the present application;

[0028] Figure 5 is a third cross-sectional view of a substrate processing apparatus according to an embodiment of the present application;

[0029] Figure 6 is a fourth cross-sectional view of a substrate processing apparatus according to an embodiment of the present application; and

[0030] Figure 7 This is a fifth cross-sectional view of a substrate processing apparatus according to an embodiment of the present application. DETAILED DESCRIPTION

[0031] The following describes preferred embodiments of the present invention with reference to the drawings in the specification to prove that the present invention can be implemented. The embodiments of the invention can fully introduce the present invention to those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied through many different forms of invention embodiments, and the scope of protection of the present invention is not limited to the embodiments mentioned in the text. In the drawings, parts with the same structure are represented by the same numerical labels, and components with similar structures or functions are represented by similar numerical labels. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of the components is appropriately exaggerated in some places in the drawings.

[0032] In addition, the following descriptions of the various embodiments of the invention are made with reference to the attached diagrams to illustrate specific embodiments of the invention in which the present invention may be implemented. The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the present invention, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0033] refer to Figure 2 , which is a first top view of a substrate processing device according to an embodiment of the present application. In the present application, the substrate 2 may be a wafer product. Due to the complexity of current semiconductor processes and wafer cutting and structure stacking, the substrate 2 forms an uneven surface. Figure 2In the embodiment, the substrate 2 includes a three-dimensional chip (3D Integrated Circuit, 3D-IC) stacking structure. Generally, 3D-IC wafer stacking can be divided into three technologies: (1) chip to chip (C2C) stacking, (2) chip to wafer (C2W) stacking, and (3) wafer to wafer (W2W) stacking. Wafer stacking will cause the surface of the wafer to have an uneven surface with a high aspect ratio (High Aspect Ratio).

[0034] When performing a cleaning process on a substrate 2 with an uneven surface, process liquids (e.g., deionized water (DI Water), cleaning solutions, etc.) are prone to splashing. Cleaning solutions, such as etching solutions, are relatively expensive. If a recovery device is not fully configured, different process liquids may be cross-contaminated. For example, splashing DI water may contaminate a recovery unit used to recover the cleaning solutions, thereby reducing the recovery efficiency of the cleaning solutions.

[0035] like Figure 2 As shown, the present application provides a substrate processing apparatus 1 with a recovery device 30. The substrate processing apparatus 1 includes a turntable 10, a liquid supply device 20, and the recovery device 30. The turntable 10 is used to place a substrate 2. The liquid supply device 20 is disposed on the turntable 10 and applies a plurality of process liquids to the substrate 2. The plurality of process liquids include a first process liquid and a second process liquid. In one embodiment, the first process liquid can be an etching or cleaning solution, and the second process liquid can be deionized water.

[0036] In addition, Figure 2 Although only one liquid supply device 20 is shown in the figure, the number of liquid supply devices 20 is not limited to only one and can be adjusted according to needs.

[0037] To further illustrate, the recovery device 30 can recover liquid (such as the process liquid mentioned above) and may also include components for collecting waste gas (such as waste gas or water vapor generated when cleaning the substrate 2). In the drawings of this application, only components for recovering liquid are shown.

[0038] like Figure 3As shown, the substrate processing apparatus 1 of the present application further includes a drive motor 60, which can be connected to the turntable 10 via a rotating shaft to drive the turntable 10 to rotate. Therefore, when the substrate 2 is cleaned, the process liquid will move toward the periphery of the substrate due to centrifugal force. The recovery device 30 can recover the first process liquid and the second process liquid and includes a first recovery ring 301 and a second recovery ring 302. In other embodiments, more recovery rings may be included.

[0039] In one embodiment, the substrate processing apparatus 1 of the present application further includes a lifting drive device 50. The lifting drive device 50 can include a single or multiple drive units, such as servo motors, to respectively drive the first recovery ring 301 and the second recovery ring 302 to move in the vertical direction. In other words, in the present application, the first recovery ring 301 and the second recovery ring 302 move independently rather than synchronously, and thus can move in the vertical direction sequentially.

[0040] Further explanation, such as Figure 3 As shown, a first recovery ring 301 and a second recovery ring 302 are disposed around the turntable 10. The second recovery ring 302 is disposed below the first recovery ring 301 and moves vertically relative to the turntable 10. Before the etching or cleaning process begins, the first recovery ring 301 and the second recovery ring 302 are both at their lowest initial positions, with the first ring wall 3011 and the second ring wall 3021 tightly fitted together, waiting for a robotic arm (not shown) to grab the substrate 2 and place it on the turntable 10.

[0041] The detailed structure of the above components is further described below. Figure 4A As shown in Figure 2B, the first recovery ring 301 has a first ring wall 3011 and a stop wall 3012, one end of the first ring wall 3011 is adjacent to the turntable 10, and the other end is connected to the stop wall 3012; the second recovery ring 302 has a second ring wall 3021, a third ring wall 3022 and a fourth ring wall 3023, the third ring wall 3022 is located between the second ring wall 3021 and the fourth ring wall 3023, and the second ring wall 3021 is closer to the turntable 10 than the third ring wall 3022 and the fourth ring wall 3023.

[0042] The third annular wall 3022 and the fourth annular wall 3023 are inclined in different directions and form a first groove 3024 opening toward the stopping wall 3012 .

[0043] The first ring wall 3011 is tilted relative to the rotating table 10 , so when the first recovery ring 301 rises, the first ring wall 3011 tilted toward the rotating table 10 can effectively block the splashing liquid and allow it to flow into the first opening 303 .

[0044] In addition, the substrate processing apparatus 1 of the present application further includes a fixed annular wall 306 . The fixed annular wall 306 is disposed below the recovery device 30 and forms a second groove 3061 with an opening facing the recovery device 30 .

[0045] The first thickness of the first annular wall 3011 gradually increases in the direction away from the turntable 10, and the second thickness of the second annular wall 3021 gradually increases in the direction away from the turntable 10. In other words, the first annular wall 3011 and the second annular wall 3021 have the thinnest thickness at the position closest to the turntable 10; Figure 5 As shown, when the first annular wall 3011 and the second annular wall 3021 are in close contact (when the first opening 303 is closed), mechanical interference can be avoided and the fluid is facilitated to flow into the second opening 304 .

[0046] like Figure 4A and Figure 5 As shown, the first recovery ring 301 and the second recovery ring 302 rise in sequence and form a first opening 303 and a second opening 304 in sequence. When the first opening 303 is formed, the second ring wall 3021 tightly fits against the side of the turntable 10, and the second opening 304 is closed. When the second opening 304 is formed, the first ring wall 3011 and the second ring wall 3021 come into contact and fit tightly, closing the first opening 303. In one embodiment, the first opening 303 is formed between the first recovery ring 301 and the second recovery ring 302, and the second opening 304 is formed between the second recovery ring 302 and the turntable 10.

[0047] It is worth mentioning that, in one embodiment, different process liquids (such as cleaning solution and etching solution) are recovered through different openings. Therefore, since the openings are closed in sequence, cross contamination between different process liquids can be avoided.

[0048] Specifically, because the third annular wall 3022 and the fourth annular wall 3023 are inclined in different directions, the process liquid (e.g., etching solution or cleaning solution) can flow to the bottom of the first groove 3024, allowing the process liquid to flow smoothly into the recovery line. Furthermore, the provision of the stop wall 3012 can further prevent the recovered solution or other process liquid (e.g., deionized water) from unintentionally entering or exiting the first opening 303 after the first opening 303 is closed.

[0049] For example, in some cases, although the first opening 303 is closed, there may be a tiny gap. At this time, the back-splashed deionized water may flow in through the gap, causing the recovered process liquid (such as etching solution or cleaning solution) to be contaminated; or, the recovered process liquid (such as etching solution or cleaning solution) may drip from the first opening 303 under certain circumstances, such as machine shaking, residual liquid not completely removed, etc., which will cause contamination to the substrate 2 undergoing subsequent processes. Therefore, the stop wall 3012 can avoid the above situation.

[0050] In addition, since the stopping wall 3012 extends toward the bottom of the first groove 3024 , when the fluid flows into the first opening 303 , the stopping wall 3012 can guide the fluid toward the first groove 3024 , thereby increasing the recovery efficiency.

[0051] To further illustrate, after the process liquid flows in from the first opening 303 or the second opening 304 , it will enter the corresponding recovery device through other pipelines for recovery. The recovery pipeline and recovery device of the present application will be further described below.

[0052] like Figure 6 As shown, in one embodiment, the substrate processing equipment 1 of the present application further includes a first recovery pipeline 401 , a first recovery device 402 , and a second recovery pipeline 403 .

[0053] One end of the first recovery line 401 is connected to the bottom of the first groove 3024, thereby allowing the first process liquid (such as etching solution or cleaning solution) to flow smoothly into the first recovery line 401. The other end of the first recovery line 401 is connected to the first recovery device 402 to receive the first process liquid flowing into the first recovery line 401.

[0054] To further illustrate, in one embodiment, the first recovery device 402 includes components such as a pump, a flow meter, and a filter unit to recycle the first process liquid for reuse, thereby achieving a cost-saving effect.

[0055] like Figure 7 As shown, one end of the second recovery line 403 is connected to the bottom of the second groove 3061, so that the second process liquid (for example, deionized water after cleaning the substrate 2) can flow smoothly into the second recovery line 403. The other end of the second recovery line 403 is connected to the second recovery device 404 to receive the second process liquid flowing into the second recovery line 403.

[0056] To further illustrate, in one embodiment, the second recovery device 404 includes components such as a wastewater recovery tank and a wastewater treatment unit to treat pollutants contained in the second process liquid to avoid environmental pollution.

[0057] In addition, it is worth mentioning that the first recovery pipeline 401 and the second recovery pipeline 403 can be staggered and connected to different first grooves 3024 and second grooves 3061 respectively. That is, the two are independent pipelines and can independently recover different process liquids.

[0058] The following will further explain the recovery process of the process liquid of this application. Figure 3 When the process liquid has not yet been recovered, the first recovery ring 301 and the second recovery ring 302 can both be located at the lowest position, and when the first recovery ring 301 and the second recovery ring 302 are both located at the lowest position, the first ring wall 3011 and the second ring wall 3021 are in close contact, and the first opening 303 is closed by the first ring wall 3011 and the second ring wall 3021.

[0059] As shown in Figure 4, when the first process liquid (such as etching solution or other cleaning solution) needs to be recovered, the first recovery ring 301 can be raised first. When the first recovery ring 301 moves to the highest position in the vertical direction and the second recovery ring 302 is at the lowest position, the first opening 303 is formed between the first recovery ring 301 and the second recovery ring 302. At this time, the first process liquid will enter the first opening 303 from the substrate 2 due to centrifugal force.

[0060] Then, if Figure 4A and Figure 6 As shown, the first process liquid flows from the first opening 303 into between the first recovery ring 301 and the second recovery ring 302, and is guided by the above-mentioned stop wall 3012 to flow toward the first groove 3024, so that the first process liquid flows from between the first recovery ring 301 and the second recovery ring 302 to the first recovery pipeline 401, and is recovered by the first recovery device 402.

[0061] like Figure 5 As shown, when the second process liquid (e.g., deionized water after cleaning the substrate 2) needs to be recovered, the second recovery ring 302 can be raised again. When the second recovery ring 302 moves to the highest position in the vertical direction (at this time, both the first recovery ring 301 and the second recovery ring 302 are at the highest position), the first ring wall 3011 and the second ring wall 3021 are in contact and close contact, and the second opening 304 is formed between the second recovery ring 302 and the turntable 10. At this time, the second process liquid will enter the second opening 304 from the substrate 2 due to centrifugal force.

[0062] Then, if Figure 7 As shown, the second process liquid flows from the second opening 304 into between the second recovery ring 302 and the rotating table 10 and flows toward the second groove 3061 . Thus, the second process liquid flows to the second recovery pipeline 403 and is recovered by the second recovery device 404 .

[0063] In summary, in the present application, in addition to being able to rise and fall in the vertical direction to recover process chemicals, when cleaning wafers with deionized water, the recovery ring at the bottom can move upward to seal the chemical recovery port between the upper recovery ring and the two, thereby preventing deionized water from being sprayed from the rotating wafer surface to the adjacent chemical recovery port. Therefore, in the present application, the chemical collected by the chemical recovery ring is not easily contaminated and can then flow to the corresponding recovery pipeline to facilitate subsequent recovery or discharge, while the deionized water can be directly collected through the corresponding wastewater recovery pipe. The two are recovered separately through different pipelines, thereby avoiding the problem of cross-contamination between the recovered chemical and the wastewater.

[0064] The above is a detailed introduction to a substrate processing equipment with a recovery device provided in an embodiment of the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present invention. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing device equipped with a recovery device, characterized in that: The substrate processing equipment comprises: A rotating table for placing a substrate; a liquid supply device, disposed above the rotating table, for applying a plurality of process liquids to the substrate, the plurality of process liquids comprising a first process liquid and a second process liquid; as well as A recovery device, for recovering the first process liquid and the second process liquid, comprising: a first recovery ring, circumferentially disposed around the rotating platform and movable in a vertical direction relative to the rotating platform; and a second recovery ring, circumferentially disposed around the rotating platform, disposed below the first recovery ring, and movable in the vertical direction relative to the rotating platform; The first recovery ring and the second recovery ring move in the vertical direction in sequence and form a first opening and a second opening in sequence; the first opening is formed between the first recovery ring and the second recovery ring, and the second opening is formed between the second recovery ring and the rotating table.

2. The substrate processing equipment with a recovery device according to claim 1, wherein: The first recovery ring has a first ring wall and a stop wall. One end of the first ring wall is adjacent to the rotating platform, and the other end is connected to the stop wall.

3. The substrate processing equipment with a recovery device according to claim 2, wherein: The first annular wall is arranged to be inclined relative to the rotating platform.

4. The substrate processing equipment with a recovery device according to claim 2, wherein: The first thickness of the first annular wall gradually increases along a direction away from the rotating platform.

5. The substrate processing equipment with a recovery device according to claim 2, wherein: The second recovery ring has a second ring wall, a third ring wall and a fourth ring wall. The third ring wall is located between the second ring wall and the fourth ring wall. The second ring wall is closer to the rotating platform than the third ring wall and the fourth ring wall.

6. The substrate processing equipment with a recovery device according to claim 5, wherein: The second thickness of the second annular wall gradually increases along a direction away from the rotating platform.

7. The substrate processing equipment with a recovery device according to claim 5, wherein: When the first opening is formed, the second annular wall is tightly matched with the side of the rotating platform, and the second opening is closed.

8. The substrate processing equipment with a recovery device according to claim 5, wherein: When the second opening is formed, the first annular wall and the second annular wall are in close contact with each other, and the first opening is closed.

9. The substrate processing equipment with a recovery device according to claim 5, wherein: The third annular wall and the fourth annular wall are inclined in different directions and form a first groove with an opening facing the stop wall.

10. The substrate processing equipment with a recovery device according to claim 1, wherein: When the first recovery ring moves to the highest position in the vertical direction and the second recovery ring is located at the lowest position, the first process liquid flows from the first opening into between the first recovery ring and the second recovery ring.

11. The substrate processing equipment with a recovery device according to claim 9, wherein: The substrate processing equipment further includes a first recovery pipeline and a first recovery device. The first process liquid flows from between the first recovery ring and the second recovery ring to the first recovery pipeline and is recovered by the first recovery device.

12. The substrate processing equipment with a recovery device according to claim 1, wherein: The substrate processing equipment further includes a fixed annular wall, which is disposed below the rotating platform and forms a second groove with an opening facing the recovery device.

13. The substrate processing equipment with a recovery device according to claim 11, wherein: When the first recovery ring and the second recovery ring move to the highest position in the vertical direction, the second process liquid flows from the second opening to the second groove.

14. The substrate processing equipment with a recovery device according to claim 12, wherein: The substrate processing equipment further includes a second recovery pipeline and a second recovery device. The second process liquid flows from the second groove to the second recovery pipeline and is recovered by the second recovery device.

15. The substrate processing equipment with a recovery device according to claim 11, wherein: The substrate processing equipment further includes a driving motor, which drives the rotating table to rotate and is disposed below the rotating table.

16. The substrate processing equipment with a recovery device according to claim 1, wherein: The substrate processing equipment further includes a lifting drive device, which drives the first recovery ring and the second recovery ring to move in the vertical direction.

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