Manufacturing method and application of air bridge and mask, and mask

Abstract

The invention discloses a manufacturing method and application of an air bridge and a mask and the mask, and belongs to the field of quantum chip manufacturing. The method for manufacturing the mask comprises the steps that a substrate is provided, a first light resistance layer is formed on the surface of the substrate, the first light resistance layer is patterned and subjected to hot backflow, the first light resistance layer is provided with two windows far away from each other, a bridge support and a supporting layer, the bridge support and the supporting layer are separated by the two windows, and the supporting layer is provided with a first sub-layer and a second sub-layer on the two sides of the bridge support; and fabricating a second photoresist layer on the first sub-layer and the second sub-layer, the second photoresist layer having an undercut opening and communicating with the window. The mask allows the air bridge to be manufactured in a stripping mode in the manufacturing process, so that the manufacturing steps of the air bridge can be reduced, and the manufacturing success rate of the air bridge is also improved.

Description

Technical Field

[0001] The present application belongs to the field of quantum information, especially the field of quantum chip manufacturing. In particular, the present application relates to a manufacturing method, application and mask of an air bridge and a mask. Background Art

[0002] Air bridges are a crucial component of superconducting quantum chips. They are typically designed to provide a certain degree of electromagnetic isolation between qubits to reduce the impact of electromagnetic interference. This helps maintain relative isolation between qubits, thereby improving the performance of the superconducting quantum chip and the accuracy of quantum computing.

[0003] In some cases, air bridges can help reduce crosstalk between qubits. By properly designing the air bridge structure, electromagnetic field leakage through the air bridge can be reduced, thereby reducing crosstalk. The air bridge also serves as a common ground for both sides of the circuit.

[0004] In short, the air bridge in the superconducting quantum chip is an important component that can ensure the performance and reliability of the quantum chip. Summary of the Invention

[0005] The examples of the present application provide a method for manufacturing an air bridge and a mask, an application thereof, and a mask. Using the mask, the air bridge can be manufactured more conveniently and with fewer steps, thereby facilitating the stable acquisition of high-quality air bridges.

[0006] The solution of this application example is implemented through the following content.

[0007] In a first aspect, an example of the present application discloses a method for manufacturing a mask, comprising:

[0008] Providing a substrate having a first photoresist layer formed on a surface thereof, the first photoresist layer being patterned and subjected to thermal reflow, the first photoresist layer having two windows spaced apart from each other, a bridge separated by the two windows, and a supporting layer, the supporting layer having a first sublayer and a second sublayer on both sides of the bridge; and

[0009] A second photoresist layer is manufactured on the first sub-layer and the second sub-layer, wherein the second photoresist layer has an undercut opening and is connected to the window.

[0010] According to some examples of the present application, the thermal reflow temperature of the first photoresist layer is greater than the glass transition temperature of the first photoresist layer.

[0011] According to some examples of the present application, thermal reflow is performed after exposing and developing the first photoresist layer.

[0012] According to some examples of the present application, the second photoresist layer includes a bottom layer and a top layer that are manufactured separately, the bottom layer contacts the first sub-layer and the second sub-layer respectively, and the top layer is attached to a surface of the bottom layer.

[0013] According to some examples of the present application, a method for manufacturing a second photoresist layer includes:

[0014] Spin coating a bottom photoresist on the substrate, and spin coating a top photoresist on the bottom photoresist, wherein the bottom photoresist and the top photoresist have different lithographic sensitivities; and

[0015] The bottom photoresist and the top photoresist are exposed and developed.

[0016] According to some examples of the present application, along the thickness direction of the substrate, an outline of the undercut opening of the second photoresist layer is projected between the bridge support and the first sub-layer, and between the bridge support and the second sub-layer.

[0017] In a second aspect, an example of the present application discloses a mask obtained by implementing the aforementioned method for manufacturing a mask.

[0018] In a third aspect, an example of the present application discloses a mask comprising:

[0019] bridge support;

[0020] a first sublayer and a second sublayer separated from the bridge support by a gap on both sides of the bridge support;

[0021] and, a second photoresist layer stacked on the first sub-layer and the second sub-layer and having an undercut structure;

[0022] The bridge support, the first sub-layer and the second sub-layer have arc-shaped surfaces;

[0023] Along the thickness direction of the undercut layer, the projected outline of the undercut structure is in the gap.

[0024] In a fourth aspect, an example of the present application discloses an application of the aforementioned method for manufacturing a mask in manufacturing an air bridge.

[0025] In a fifth aspect, examples of the present application disclose a method of manufacturing an air bridge, comprising:

[0026] Deposition is performed through a mask to manufacture a coating layer, wherein the mask is formed on the surface of the substrate, and the mask is manufactured by implementing the above-mentioned method for manufacturing a mask, or is provided by the above-mentioned mask.

[0027] According to some examples of the present application, the method further includes: removing the support layer and the second photoresist layer in the mask by a stripping process, and removing the bridge support by washing the resin.

[0028] The mask in the examples of this application comprises a bridge support, a support layer, and a second photoresist layer. The second photoresist layer has an undercut structure and is formed on the support layer. Therefore, using this mask, an air bridge can be manufactured by lift-off. This method, unlike air bridges manufactured by etching, eliminates the need for an etching step, thus reducing the number of process steps and improving the success rate of air bridge manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] For a clearer explanation, the following briefly introduces the drawings required for the description.

[0030] Figure 1 A schematic diagram illustrating a process flow for manufacturing a control bridge in the related art;

[0031] Figure 2 This is a schematic structural diagram of a mask used to manufacture an air bridge connecting a first element and a second element in an example of the present application;

[0032] Figure 3 Made for this application example Figure 2 Schematic diagram of the structure manufactured at each step in the process of the mask;

[0033] Figure 4 Made for this application example Figure 2 Schematic diagram of the process flow of the mask;

[0034] Figure 5 For use in this application example Figure 2 Schematic diagram of the structure of each step in the process of manufacturing air bridges through a mask.

[0035] Explanation of reference numerals: 100 - mask; 101 - bridge support; 102a - first sublayer; 102b - second sublayer; 107 - window layer; 103 - bottom layer; 104 - top layer; 105a - first gap; 105b - second gap; 106 - suspension; 107 - window layer. DETAILED DESCRIPTION

[0036] An air bridge is a circuit structure used to bridge two separated plane circuits through a three-dimensional bridge structure.

[0037] In integrated circuits, air bridges and air strips can be fabricated using micro-nanofabrication methods. By introducing air bridge structures into circuits—especially complex circuits—they can solve cross-connect problems among various circuit components, such as inductors, capacitors, and transmission lines. Furthermore, they offer significant advantages over traditional wire bonding techniques.

[0038] Therefore, the manufacturing quality of the air bridge determines its performance in the circuit system. Therefore, it is necessary to ensure that the air bridge is structurally strong during the manufacturing process and can maintain its shape without collapsing or breaking in high temperature and vibration environments.

[0039] Due to its bridge-like structure, the air bridge is prone to collapse if the manufacturing quality is poor, which can cause major problems during use. This is even more obvious in quantum chips, which are sensitive to various component defects and environmental noise.

[0040] A method for manufacturing an air bridge previously adopted by the inventor is described as follows.

[0041] See Figure 1 ,The manufacturing method of the air bridge mainly includes eight steps.

[0042] Wherein, step 1 is to apply photoresist on a substrate / base such as a silicon wafer to perform a first layer of coating.

[0043] Step 2 is to expose and develop the photoresist to pattern the photoresist.

[0044] Step 3 heat-reflows the patterned photoresist that has been intentionally left on the substrate, thereby forming a heat-reflow layer. Therefore, the surface of the photoresist appears as a heat-reflow surface. Furthermore, through the reflow process, a spherical or cylindrical photoresist profile can be obtained.

[0045] The thermal reflow process refers to performing an additional thermal treatment on the photoresist after the photolithography step (after development) to ensure that the photoresist is properly cured.

[0046] In practice, the reflow temperature is typically set above the glass transition temperature (Tg) of the photoresist. The Tg represents the temperature at which a material transitions from a solid to a glassy (amorphous) state. During the reflow process, increasing the temperature helps the photoresist achieve sufficient fluidity to ensure it fills gaps in fine structures and provides a smooth surface.

[0047] The exact reflow temperature typically depends on the type of photoresist used and the specific requirements of the manufacturing process. However, it is typically slightly above this temperature (glass transition temperature). This choice of hot reflow temperature ensures that the photoresist exhibits sufficient fluidity while not softening excessively, thereby preventing distortion or blurring of the photolithographic pattern. In some specific examples, when using photoresist S1813, the reflow process involves baking the substrate on a hot plate at 150°C for 4 minutes.

[0048] Step 4 involves coating the reflowed photoresist surface and the exposed substrate surface through patterning. This film forms an air bridge, so its material is the same as the target material for the air bridge. For example, in a superconducting quantum chip, the air bridge material can be aluminum.

[0049] After the material of the air bridge is formed in step 4, the specific structure of the air bridge is formed by patterning it, for example, as implemented in steps 5, 6 and 7.

[0050] In step 5, a second layer of resist is applied based on the film deposited in step 4. The resist can be made of the same composition as the first layer of resist applied in step 1. Next, in step 6, the second layer of resist is exposed and developed to disconnect the second layer from the first layer, thereby exposing a portion of the film deposited in step 4. Subsequently, in step 7, this "partial region" is etched to form an air bridge structure.

[0051] Finally, the remaining portion of the first coating and the remaining portion of the second coating are removed by the glue washing operation in step 8, thereby forming an independent air bridge structure distributed on the surface of the substrate.

[0052] However, in practice, the inventors found that the success rate of air bridges manufactured by this process was relatively low, and the process steps were long and complex. Therefore, they hoped to try to find other alternatives that could achieve better results in terms of process complexity and success rate.

[0053] After analysis, Figure 1 The solution shown is based on an etching method to manufacture the air bridge, and therefore an etching operation is required during the process, which negatively affects the success rate and process complexity.

[0054] Therefore, through research and practice, the inventors proposed a new air bridge manufacturing method in the examples of this application. Figure 1 Different from the scheme shown, the scheme for manufacturing the air bridge in the example of the present application is mainly based on the lift-off process and does not require the use of etching operations, thereby improving the success rate of the manufacturing process and reducing the complexity.

[0055] One of the key points of this process is to form a mask with a specific structure. The following will focus on the mask.

[0056] As mentioned above, the air bridge is used to connect two separated structures so that the two structures can be electrically regarded as having equal potential, for example, as ground planes, thereby combining isolated grounds to form a relatively larger ground plane.

[0057] For example, in the case of superconducting quantum chips, as the number of bits increases, there will be crosstalk that cannot be ignored when performing bit control and signal reading and control through the CPW (Coplanar waveguide) structure.

[0058] To overcome the crosstalk problem, the split ground planes on both sides of the CPW can be connected to achieve a balanced potential and thereby reduce the crosstalk effect.

[0059] Therefore, the mask proposed by the inventors can be used to create an air bridge spanning a first element and a second element, where the first element and the second element are determined according to the specific instance of the object spanned by the air bridge, for example, for a coplanar waveguide, the ground planes on both sides of its central conductor.

[0060] Specifically, in the example, see Figure 2 、 Figure 3 、 Figure 4 and Figure 5 The mask 100 includes a bridge support 101, a support layer, and a window layer 107. Generally speaking, the bridge support 101 is used to support the bridge surface of the air bridge. The support layer is used to support the window layer 107, and the window layer 107 defines the pattern area.

[0061] The following describes each structure of the mask 100 .

[0062] The bridge 101 can be a photoresist or a hard mask 100 (e.g., silicon dioxide). The support layer coplanar with the bridge 101 can be made of the same material as the bridge 101—for example, the support layer and the bridge 101 are the hard mask 100. Furthermore, the bridge 101 and the support layer can be manufactured simultaneously in the same step.

[0063] For example, if both the bridge 101 and the support layer are made of photoresist, the photoresist can be applied to the substrate surface and then patterned. Preferably, when both or one of the two layers is made of photoresist, it can be processed through a reflow process / thermal reflow. Under the action of thermal reflow, it can be deformed, thereby producing a modified surface topography.

[0064] That is, when one or both of the bridge 101 and the support layer are made of photoresist, thermal reflow can be used to make them have corresponding curved surfaces exposed by the window layer 107. In addition to using thermal reflow, other examples can also consider using gradient exposure. In this way, after development, a gradient exposure surface can be formed, which can have a generally curved structure.

[0065] The curved surface of bridge support 101 smoothes the trajectory of the air bridge deck, creating a more natural and fluid transition, thereby avoiding the risk of fracture or collapse caused by excessive stress concentration in localized areas of the bridge deck. Furthermore, proper curing of the adhesive during the reflow process can improve image clarity. As discussed in the subsequent structural discussion, the reflow temperature of the first photoresist layer is greater than its glass transition temperature.

[0066] An air bridge spans two elements and has a structure consisting of piers and a bridge deck. The bridge deck is represented by the bridge support 101, while the piers are represented by the supporting layer. Therefore, the supporting layer comprises a first sublayer 102a and a second sublayer 102b, distributed on either side of the bridge support 101. A first gap 105a is formed between the first sublayer 102a and the bridge support 101, while a second gap 105b is formed between the second sublayer 102b and the bridge support 101. These first and second gaps 105a and 105b serve as the filling and distribution spaces for the physical structure of the bridge piers.

[0067] As the name implies, the window layer 107 is a structural layer having a (deposition) window. Therefore, after obtaining the mask 100, the air bridge material can be made to pass through the window into the space defined by the substrate, bridge 101, and support layer through evaporation deposition, and adhere to the corresponding structural surface to form a designed structure.

[0068] The window layer 107 is attached to the support layer in a stacked manner and has an undercut structure, and the window layer 107 also exposes the bridge 101, the first gap 105a and the second gap 105b through the window.

[0069] Figure 2 , a structure of a mask 100 formed on a substrate is shown.

[0070] exist Figure 2 In the embodiment, the window layer 107 is manufactured in a double-layer structure to reduce the difficulty of its manufacturing and forming - each layer can be manufactured separately and its structure designed.

[0071] In this example, the window layer 107 has a double-layer structure and includes a stacked top layer 104 and a bottom layer 103. Top and bottom are relative to the substrate, so the top layer 104 is farther away from the substrate, while the bottom layer 103 is closer to the substrate. The bottom layer contacts the first and second sublayers, respectively, and the top layer adheres to the surface of the bottom layer. For a second photoresist layer with such a structure, a bottom layer of photoresist can be spin-coated on the substrate, followed by a top layer of photoresist spin-coated on the bottom layer of photoresist, wherein the bottom layer and the top layer of photoresist have different lithographic sensitivities. The bottom layer and the top layer of photoresist are then exposed and developed to form the second layer.

[0072] Since the window layer 107 is formed with an undercut structure, the top layer 104 has a structure suspended above the bottom layer 103 , or described as a suspended glue 106 , which is conducive to peeling without generating residual glue.

[0073] In terms of material, if necessary, the top layer 104 and the bottom layer 103 can be made of the same material, but as a beneficial attempt, the two are formed of different materials, for example, the two have different photosensitive properties, so as to facilitate the formation of an undercut structure.

[0074] From the perspective of structural distribution, taking the stacking direction of the window layer 107 and the support layer as the positioning reference, in some examples, the first gap 105a and the second gap 105b are outside the window projection area of ​​the window layer 107, so that the first gap 105a and the second gap 105b are respectively separated from the edge of the projection area. Figure 2 In FIG. 1 , the vertical dotted line from the right side of the suspension 106 represents the relative positional relationship between the window and the gap.

[0075] That is, the vertical direction of the dotted line extends into the gap, rather than onto the second sub-layer 102b of the support layer. This makes it difficult for the deposited material to adhere to the support layer during subsequent cleaning, such as direct evaporation.

[0076] In other words, along the thickness direction of the substrate, the outline of the undercut opening of the second photoresist layer is projected between the bridge support and the first sub-layer, and between the bridge support and the second sub-layer. In other words, the projection outline of the undercut structure is in the gap.

[0077] In order to facilitate those skilled in the art to implement the solution of the example of the present application, the manufacturing method of the mask 100 in the example is described below.

[0078] Remanufacturing methods include:

[0079] The first step is to provide a substrate with a first photoresist layer formed on the surface.

[0080] The first photoresist layer is patterned and undergoes thermal reflow.

[0081] Through the patterning process, the first photoresist layer has two windows that are far away from each other, a bridge separated by the two windows, and a support layer, and the support layer has a first sublayer and a second sublayer on both sides of the bridge.

[0082] Thermal reflow, on the other hand, can change the topography of the bridge and support layers, for example, creating a smooth curved surface. Furthermore, subsequent processing does not easily alter the properties of the material. For example, during subsequent exposure and development, the first photoresist layer, having already undergone thermal reflow, is not adversely affected by the process and remains unaffected by exposure and development.

[0083] The two windows can serve as attachment areas for the air bridge piers when the mask is used to manufacture the air bridge. The bridge supports can be used to support the air bridge deck structure. The two windows can be formed by exposing and developing the material of the first photoresist layer to form two through-holes, followed by thermal reflow. That is, thermal reflow is performed after the first photoresist layer is exposed and developed.

[0084] In the second step, a second photoresist layer is manufactured on the first sub-layer and the second sub-layer, wherein the second photoresist layer has an undercut opening and is connected to the window.

[0085] The undercut opening serves as a path for the deposited material to pass through during subsequent deposition to create the air bridge. Because the second photoresist layer forms the undercut opening, during the deposition process, the deposited material forming the air bridge portion is not connected to the deposited material formed above the second photoresist layer, but rather is separated from each other.

[0086] In this way, the air bridge material is separated without the need to etch a continuous thin film material to obtain an independent air bridge. In addition, the deposited material on the second photoresist layer can be easily separated during the stripping operation.

[0087] See Figure 3 and Figure 4 The process of manufacturing the mask 100 mainly includes five steps, which are:

[0088] Step 1: Apply glue on the surface of the substrate to form a first layer of glue.

[0089] The substrate can be a silicon wafer or sapphire, and the spin-coated adhesive can be any photoresist, with no specific requirements. Its thickness depends on the actual environment. The silicon wafer can be pre-processed, such as through surface polishing, cleaning, and thinning.

[0090] Step 2: Expose and develop the photoresist to pattern it.

[0091] exist Figure 3 In the process, through exposure and development, localized areas of the first layer of resist are removed, exposing the substrate surface. This means that the first layer of resist is formed with pores extending through the thickness. This step can be performed using either optical exposure (e.g., ultraviolet light if ultraviolet light is used) or electron beam exposure. Mask 100 can be used or not, depending on the method.

[0092] Step 3: Thermally reflow the developed photoresist.

[0093] Thermal reflow heats the photoresist and substrate together, with the heating temperature being selected to be above the glass transition temperature of the photoresist. After thermal reflow, the photoresist deforms, and its surface can be smoothed, such as a curved surface. For example, the bridge 101 has a roughly ridged shape.

[0094] Step 4: The window layer 107 is fabricated by spin coating twice after thermal reflow.

[0095] exist Figure 3 The middle window layer 107 has two sublayers, such as the first sublayer 102a and the second sublayer 102b. Therefore, the bottom layer 103 is first spin-coated, filling the gap and adhering to the bridge 101, the first sublayer 102a, and the second sublayer 102b. The top layer 104 is then spin-coated on the bottom layer 103.

[0096] Step 5: Photolithography is performed on the window layer 107 .

[0097] This step can be performed by selectively using the mask 100, then performing optical exposure or electron beam exposure, and then developing to form an undercut structure, and also removing the photoresist of the bottom layer 103 on the surface of the bridge 101 and in the first gap 105a and the second gap 105b.

[0098] Through this step, the bridge 101 , the first gap 105 a , and the second gap 105 b are exposed, and thus can be used as attachment spaces for deposition materials in a subsequent deposition / film coating operation to manufacture an air bridge.

[0099] It should be noted that the manufacturing processes provided in the embodiments of the present application may require the deposition of one or more materials, such as superconductors, dielectrics, and / or metals, during implementation. Therefore, depending on the materials selected, these materials may be deposited using deposition processes such as chemical vapor deposition, physical vapor deposition (e.g., evaporation or sputtering), or epitaxial techniques, as well as other deposition processes.

[0100] Exemplarily, the deposition process includes ion beam assisted deposition (IBAD), vacuum evaporation coating (Evaporation), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), chemical vapor deposition (CVD), sol-gel method (sol-gel) and magnetron sputtering coating method (Magnetron 25Sputtering), etc.

[0101] Furthermore, the manufacturing processes described in the embodiments of the present application may also require the removal of one or more materials from various components or structures during the manufacturing process. Similarly, depending on the material to be removed, the removal process may include, for example, a wet etching technique, a dry etching technique, or a lift-off process. In practice, the materials forming the circuit elements described herein may be patterned using known lithographic techniques (e.g., photolithography or electron beam lithography).

[0102] Furthermore, for the sake of brevity, conventional techniques associated with semiconductor and / or superconducting device and integrated circuit (IC) fabrication may or may not be described in detail herein.

[0103] The various tasks and process steps described herein may be incorporated into a more comprehensive program or process having additional steps or functionality not described in detail herein.

[0104] In particular, the various steps in the manufacture of semiconductor and / or superconducting devices and semiconductor / superconductor-based ICs are well known, so for the sake of brevity, many conventional steps will only be briefly mentioned here or will be completely omitted without providing well-known process details.

[0105] Based on the above mask 100 , it can be used to form multiple components and intermediate process structures in the manufacturing process.

[0106] For example, a method for manufacturing an air bridge includes:

[0107] A mask as described above is formed on a substrate, and then deposition is performed through the mask to produce a coating layer, thereby obtaining an independent air bridge structure. Subsequently, the support layer and the second photoresist layer in the mask are removed by a stripping process, and then the bridge support is removed by washing the resin.

[0108] As an example, in other examples of the present application, a circuit board is proposed, which includes a substrate, a circuit structure, and a mask 100 .

[0109] The circuit structure and mask 100 are formed on the surface of the substrate. The circuit structure includes a first element and a second element separated from each other; that is, a gap is formed between the first and second elements. The bridge 101 of mask 100 is between the first and second elements, the first sublayer 102a covers the first element, and the second sublayer 102b covers the second element.

[0110] In terms of the bridge structure, measured vertically from the substrate surface, the bridge 101 has a first height, while the support layer has a second height, and the first and second heights are equal. In other examples, the first and second heights can be unequal as needed; for example, the bridge 101 can be taller than the support layer. By designing and adjusting the height of the bridge 101 in the mask 100, the resulting air bridges can have different bridge heights.

[0111] The circuit structure can include various components, depending on the specific example, and is not particularly limited. For example, the circuit structure is a coplanar waveguide, and thus includes a center conductor and a first ground plane and a second ground plane on either side of the center conductor. It can be understood that the first element is provided by the first ground plane, and the second element is provided by the second ground plane.

[0112] In some more specific but optional examples, this application also discloses a quantum circuit. This circuit includes an air bridge and a transmission line. The air bridge is fabricated using the aforementioned mask 100, while the transmission line is provided by a coplanar waveguide in the aforementioned circuit board, and the coplanar waveguide is made of a superconducting material.

[0113] The air bridge can be formed by depositing materials onto the substrate through the window layer 107 on the basis of obtaining the aforementioned mask 100 , and then removing the support layer and the window layer 107 .

[0114] For example, in Figure 5 The contents described in the above are as follows. A mask 100 is formed on the surface of the substrate, and a film is formed on the surface of the substrate and the surface of the bridge 101 through the window layer 107 of the mask 100 by direct evaporation, for example. The two ends of the coating are separated from the two sublayers (the first sublayer 102a and the second sublayer 102b) of the support layer (there is a gap, indicating that the coating does not contact the support layer), thereby facilitating lift-off and improving the quality of the manufactured air bridge.

[0115] In particular, the transmission line can be constructed as a read resonator, a read bus or a control line coupled to a superconducting quantum bit. Based on the application in the superconducting quantum chip, the above-mentioned quantum circuit is expected to exhibit superconducting properties. Therefore, the transmission line can be formed of a superconductor material that exhibits superconducting properties at a temperature equal to or lower than the critical temperature, for example, at about 10-100 millikelvin (mK) or about 4K, such as aluminum, niobium, tantalum or titanium nitride, etc. The specific implementation is not limited to these types, and any material that exhibits superconducting properties at a temperature equal to or lower than the critical temperature can be used to form a superconducting transmission line.

[0116] It should be noted that the air bridge and mask 100 provided in the circuit board and quantum circuit are similar or corresponding to the structures in the aforementioned mask 100 embodiment and have the same beneficial effects, so they are not further described here. For any undisclosed technical details, those skilled in the art are referred to the aforementioned description of mask 100 for understanding, and to save space, they are not further described here.

[0117] The embodiments described above with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application.

[0118] To make the purpose, technical solutions and advantages of the embodiments of the present application clearer, one or more embodiments are described above with reference to the accompanying drawings. Wherein, similar reference numerals are used to refer to similar components throughout the text. In the above description, for the purpose of explanation, many specific details are set forth in order to provide a more thorough understanding of one or more embodiments. However, it is obvious that in various cases, one or more embodiments can be practiced without these specific details, and the various embodiments can be combined and referenced with each other without contradiction.

[0119] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in a sequence other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0120] In addition, it should be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and / or pattern, it can be directly on another layer or substrate, and / or intervening layers can also be present. In addition, it should be understood that when a layer is referred to as being "under" another layer, it can be directly under another layer, and / or one or more intervening layers can also be present. In addition, references to being "on" and "under" various layers can be made based on the accompanying drawings.

[0121] The above describes in detail the structure, features and effects of the present application based on the embodiments shown in the drawings. The above is only a preferred embodiment of the present application, but the present application does not limit the scope of implementation to what is shown in the drawings. Any changes made in accordance with the concept of the present application, or modifications to equivalent embodiments with equivalent changes, which still do not exceed the spirit covered by the description and drawings, should be within the scope of protection of the present application.

Claims

1. A method for manufacturing a mask, characterized in that: include: Providing a substrate having a first photoresist layer formed on a surface thereof, wherein the first photoresist layer is patterned and has undergone thermal reflow, wherein the first photoresist layer has two windows spaced apart from each other, a bridge separated by the two windows, and a support layer, wherein the support layer has a first sublayer and a second sublayer on both sides of the bridge; as well as A second photoresist layer is manufactured on the first sub-layer and the second sub-layer, wherein the second photoresist layer has an undercut opening and is communicated with the window.

2. The method for manufacturing a mask according to claim 1, characterized in that Along the thickness direction of the substrate, the outline of the undercut opening of the second photoresist layer is projected between the bridge support and the first sub-layer, and between the bridge support and the second sub-layer; And / or, the heat reflow temperature of the first photoresist layer is greater than the glass transition temperature of the first photoresist layer.

3. The method for manufacturing a mask according to claim 1, wherein: The thermal reflow temperature of the first photoresist layer is greater than the glass transition temperature of the first photoresist layer, and the thermal reflow is performed after the first photoresist layer is exposed and developed.

4. The method for manufacturing a mask according to claim 1, characterized in that The second photoresist layer includes a bottom layer and a top layer which are manufactured separately. The bottom layer contacts the first sub-layer and the second sub-layer respectively, and the top layer is attached to the surface of the bottom layer.

5. The method for manufacturing a mask according to claim 4, characterized in that The method of manufacturing the second photoresist layer includes: Spin coating a bottom photoresist on the substrate, and spin coating a top photoresist on the bottom photoresist, wherein the bottom photoresist and the top photoresist have different lithographic sensitivities; and The bottom photoresist and the top photoresist are exposed and developed.

6. A mask, characterized in that: The method is obtained by implementing the method for manufacturing a mask according to any one of claims 1 to 5.

7. A mask, characterized in that: include: bridge support; a first sublayer and a second sublayer separated from the bridge support by a gap on both sides of the bridge support; and, a second photoresist layer stacked on the first sub-layer and the second sub-layer and having an undercut structure; The bridge support and the first sublayer and the second sublayer have arc-shaped surfaces; Along the thickness direction of the undercut layer, the projection outline of the undercut structure is in the gap.

8. Use of the method for manufacturing a mask according to any one of claims 1 to 5 in manufacturing an air bridge.

9. A method for manufacturing an air bridge, characterized in that: include: Deposition is performed through a mask to manufacture a coating layer, wherein the mask is formed on the surface of the substrate, and the mask is obtained by implementing the method for manufacturing a mask according to any one of claims 1 to 5, or is provided by the mask according to claim 6 or 7.

10. The method for manufacturing an air bridge according to claim 9, characterized in that: The method further comprises: removing the support layer and the second photoresist layer in the mask by a stripping process, and removing the bridge support by washing the resin.

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