Led with surface shaping brightness

Abstract

Devices, systems, and methods for controlled brightness in light emitting diodes (LEDs) are discussed herein. A lighting device includes: a p-doped semiconductor material; an n-doped semiconductor material; a first dielectric material and a second dielectric material; a bonding layer between the first dielectric material and the second dielectric material, the bonding layer comprising a high sheet resistance such that it is configured to have an ohmic loss; and an electrical contact electrically connected to the n-doped semiconductor material and the p-doped semiconductor material.

Description

[0001] This application claims the benefit of priority to U.S. Provisional Patent Application Serial No. 63 / 432,981, filed on December 15, 2022, which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to light emitting devices, light emitting device systems, and methods of making and using light emitting devices. The light emitting devices are configured to control the shape of the brightness emitted therefrom. The shape is controlled by pad size and layer thickness. Background Art

[0003] Analysis of some automotive system optics has shown that shaped surface brightness can be desirable. Surface brightness can vary, depending on the application, such as peaking in the center or having a gradient from side to side. The surface brightness with the best system optics efficiency is indicated by the system optics figure of merit (FOM). For example, for a light-emitting diode (LED) die with surface brightness concentrated in the center, a system optic with a total internal reflection (TIR) ​​lens would have higher efficacy. On the other hand, for an LED die with peak brightness and high contrast on one side, a system optic with a reflector would have higher efficacy. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] The accompanying drawings illustrate various views of devices, systems, or methods (including control systems that can vary light emitted from one or more light emitting diodes (LEDs)) according to some embodiments. The terms "front," "back," "top," "side," and other directional terms are used merely for convenience in describing devices and systems and other elements and should not be construed as limiting in any way.

[0005] Figure 1 and Figure 2 Schematic diagrams of embodiments of corresponding n-via architectures supplying non-uniform current density are shown by way of example.

[0006] Figure 3 Schematic diagrams illustrating embodiments of various operations for forming LED dies having edge-shifted brightness distributions are shown by way of example.

[0007] Figure 4 A current density distribution heat map of a device formed using prior art techniques for edge-shifted brightness is shown by way of example.

[0008] Figure 5 The use of Figure 3 Current density distribution heat map of the device formed by the method shown in .

[0009] Figure 6Schematic diagrams illustrating embodiments of various operations for forming an LED die having a central peak brightness profile are shown by way of example.

[0010] Figure 7 By way of example, a heat map of current density distribution of a device formed using the methods described herein is shown.

[0011] Figure 8 Shown by way of example Figure 3 A cross-sectional view of an embodiment of a light-emitting device.

[0012] Figure 9 By way of example, Figure 8 Exploded view of a portion of the cross section shown in FIG.

[0013] Figure 10 A graphical interpretation of the sheet resistance (Rsq) is shown by way of example.

[0014] Figure 11 Shown by way of example Figure 3 A schematic diagram of an embodiment of a portion of a device.

[0015] Figure 12 By way of example, Figure 3 Brightness graph of a device where the bonding layer has a lower sheet resistance (thicker bonding layer).

[0016] Figure 13 By way of example, Figure 3 Brightness graph of a device where the bonding layer has a sheet resistance of approximately 0.1 ohm / sq (thinner bonding layer).

[0017] Figure 14 By way of example, Figure 3 Brightness graph of a device where the bonding layer has a sheet resistance of about 0.15 ohm / sq (even thinner bonding layer).

[0018] Figure 15 A schematic diagram showing an embodiment of a portion of a device by way of example, the device comprising an opening for an n-contact, the opening being larger than Figure 14 The opening shown in FIG is closer to the center of the epitaxial layer.

[0019] Figure 16 By way of example, Figure 15 Brightness graph of a device where the bonding layer has a lower sheet resistance (thicker bonding layer).

[0020] Figure 17 By way of example, Figure 15 Brightness graph of a device where the bonding layer has a sheet resistance of approximately 0.1 ohm / sq (thinner bonding layer).

[0021] Figure 18 Shown by way of example Figure 15 Brightness graph of a device where the bonding layer has a sheet resistance of about 0.15 ohm / sq (even thinner bonding layer).

[0022] Figure 19 Shown by way of example Figure 6 A cross-sectional view of an embodiment of a device.

[0023] Figure 20 A schematic diagram of an embodiment of a method for manufacturing an LED device with a controlled brightness shape is shown by way of example. DETAILED DESCRIPTION

[0024] The optimal spatial brightness of a high beam with a TIR lens optical system is different from the optimal spatial brightness of a low beam reflector optical system. It is desirable to easily realize different brightness shapes with simple manufacturing variability.

[0025] A shaped brightness distribution LED die is defined as an LED die in which the average brightness over an area equal to at least 10% of the entire light emitting area deviates by more than 20% from the average brightness over the entire light emitting area.

[0026] In addition to the system FOM, another important metric is the flux on the road, which is primarily determined by the light emitting area (LEA) size, the average of the current density over the total LEA, and the internal quantum efficiency. The flux on the road is the "useful" flux that contributes to driver comfort. Only light that shines on the road in front of the driver contributes to the flux on the road. Light emitted upwards towards the sky or horizon or emitted to the sides does not contribute to the flux on the road. As a result, a tube core with a shaped surface brightness will have to combine areas with high current density to obtain the highest FOM with sufficient areas with low current density to obtain sufficient flux on the road. Current density is the amount of current flowing per unit cross-sectional area of ​​the material. IQE is defined as the ratio of the number of electron-hole (eh) pairs or charge carriers generated in the active layer(s) of the device to the number of photons absorbed. It is also called quantum yield and is the cause of recombination losses.

[0027] For example, compared to a flat luminance distribution, the IQE in regions with higher current density will always be lower than in regions with uniform current distribution. This is because the relationship between IQE drop and current is strongly nonlinear (especially at high current densities). Therefore, the IQE of a device with non-uniform current distribution operating at high current density will always be lower than that of a device with uniform current density.

[0028] In addition to FOM gain and flux on the road, other metrics such as forward voltage (Vf) and power efficiency can also be important. Therefore, finding a die design that provides the best compromise between system FOM gain, flux on the road, Vf, and power efficiency degradation is a challenge.

[0029] Shaped surface brightness can be achieved by optically modifying the light emitted by the die, by modifying the current distribution, or by a combination of both. If shaped surface brightness is achieved through optical modification, it will always be associated with the optical losses required to deviate from a flat brightness distribution. This is at least part of the reason why optical solutions are not preferred.

[0030] On the other hand, if shaped surface brightness is obtained by modifying the current distribution, the challenge is to find a compromise between FOM gain, flux on the road, Vf and efficacy loss.

[0031] Figure 1 and Figure 2 Schematic diagrams illustrating embodiments of respective n-via architectures 100 and 200 that supply non-uniform current density are shown by way of example. Architectures 100 and 200 facilitate current injection into different portions of the LED die where current density varies. This is typically achieved by locally increasing the density of n-vias or by increasing the size of n-vias in areas where peak brightness is desired. Architecture 100 includes increasing the size of n-vias where higher brightness is desired. Architecture 200 includes increasing the density of n-vias where higher brightness is desired. Architectures 100 and 200 achieve approximately equal brightness distribution through different n-via solutions.

[0032] However, disadvantages of architectures 100 and 200 include a reduced light-emitting area, as no light will be emitted from the larger or added doped semiconductor etched area coupled to the n-via. Another disadvantage is that architectures 100 and 200 require non-periodic patterning (etching or masking), which has a lower yield. Furthermore, current injection near the edge contacts of the die is limited by the finite contact length (perimeter) compared to the n-via perimeter, and thus the current density directly near the die boundary cannot be increased. To address the above issues, a method for generating a shaped surface brightness distribution based on a non-uniform current distribution is proposed.

[0033] The device according to an embodiment includes a modulated current and a current injection in a bonding layer. The modulated current and the current injection are configured to achieve a desired surface brightness distribution. The bonding layer is typically a thick metal layer without ohmic losses (current spreading resistance). The bonding layer acts as a redistribution layer and a current spreading layer. The bonding layer provides low contact resistance for the doped layer. The bonding layer is typically composed of at least two parts: a first part for anode contact and a second part for cathode contact.

[0034] The technique for obtaining a shaped surface brightness distribution may include injecting current into the electrically lossy bonding layer only in the area of ​​the desired peak brightness. As a result, low ohmic losses (current spreading resistance) occur between a portion of the injected current in the bonding layer and another portion of the bonding layer. By adjusting the thickness of the bonding layer, it is possible to adjust the ohmic losses to the target level of the desired surface brightness variation. An advantage of an embodiment is that no larger n-hole or additional n-hole is required. In addition, more complex manufacturing steps are no longer required.

[0035] Figure 3 A schematic diagram illustrates an embodiment of various operations for forming an LED die 300 having an edge-shifted brightness distribution. A solid, continuous electrical edge contact 332 is formed on an n-type doped semiconductor 330. Edge contact 332 can be formed using standard metallization processes. An n-type via 334 is formed on semiconductor 330. A via connecting a p-doped material to an n-doped material is generally referred to as an n-type via 334. N-type via 334 can be formed using standard metallization processes. Silver (Ag) material 336 is disposed on the p-doped semiconductor surrounding n-type via 334. Ag material 336 contacts an ITO layer to provide ohmic contact with the p-doped semiconductor.

[0036] Silver material 336 is located within the footprint of edge contact 332. Silver material 336 may be applied or positioned using a metallization process.

[0037] Dielectric material 338 is formed over portions of silver material 336 and edge contact 332. Dielectric material 338 may be silicon dioxide (SiO2, silicon nitride, etc.). Dielectric material 338 is positioned around n-via 334. An opening (sometimes referred to as a p-window) is formed in dielectric material 338 to expose underlying silver material 336. Dielectric material 338 may be deposited, grown, etc. The opening may be etched (e.g., laser etched or chemically etched), drilled, etc.

[0038] The bonding layer including the n-type contact 342 and the p-type contact 343 is formed by a standard metallization process. The bonding layer can have a high sheet resistance. High sheet resistance can be defined by resistance per square (ohms / sq or "Rsq"). High sheet resistance is greater than (or equal to) 0.06 ohms / sq, or in some instances greater than 0.15 ohms / sq. For example, Rsq = 0.1 Ω / sq can be expressed as a bulk resistivity = 2.65*10 -8 Ω·m of 0.265um Al is obtained. Rsq = 0.1Ω / sq can also be used as volume resistivity = 5*10 -7 Any combination of conductive materials that provides the correct Rsq range is also possible.

[0039] A bonding layer is located above dielectric material 338. N-type contact 342 is electrically connected to n-via 334. P-type contact 343 fills an opening in dielectric material 338, through which silver material 336 is exposed. N-type contact 342 is electrically isolated from p-type contact 343 by the opening that exposes dielectric material 338 below.

[0040] A second dielectric material 344 is formed over n-type contact 342 and p-type contact 343. Second dielectric material 344 is etched or otherwise processed to expose a portion of n-type contact 342 and p-type contact 343 below. Contacts 342 and 343 are metals such as copper, silver, aluminum, or other low-loss conductive materials. Second dielectric material 344 can be an electrical insulator as described herein. An n-type electrical contact 346 can be formed in electrical contact with n-type contact 342. A p-type contact 348 can be formed in electrical contact with p-type contact 343. Contacts 346 and 348 can be made of the same material as contacts 342 and 343, or a different material.

[0041] Figure 3 An exemplary die layout for a die with an edge-shifted brightness distribution is shown. As can be seen, in this example, the bonding layer (the metal exposed by the opening in the second dielectric material 344 that exposes 342) only overlaps the entire left side of n-type contact 342 and half of the top and bottom sides. Also note that second dielectric material 344 has openings for n-type contact 342 only in the region corresponding to the peak brightness region. Figure 3 An advantage of the approach shown in is that the resulting die surface brightness near the edge of the LEA is not limited by the limited current injection region along the die perimeter.

[0042] Figure 4 By way of example, a current density distribution heat map 400 of a device formed using the prior art technique of edge-shifted brightness is shown. Figure 5 The use of Figure 3 500 of the current density distribution of the device formed by the method shown in FIG. Figure 5 As shown in , the current crowding in the edge-offset die is much higher on the left side of the die. This ESL die has been achieved using a bond with high sheet resistance. The advantage of this approach is that it does not require modifying the density or size of n-vias 334. By modifying the bond layer thickness, the brightness gradient level between the left and right sides can be easily adjusted, as well as the associated Vf increase as shown below.

[0043] Since ohmic losses are only required on the n-contact 342 portion of the bonding layer, it is possible to have different thicknesses for the n-contact 342 and p-contact 343 portions of the bonding layer in order to lower Vf. The thickness of the n-contact 342 can be lower, and the thickness of the p-contact 343 can be thick enough to have no ohmic losses.

[0044] LED dies with two bonding layers can be used in extreme cases where a brightness distribution with very strong uniformity and very high peak brightness near the outer edge of the die is desired. In this case, current is first brought losslessly to the outer die edge through the bonding layer with low sheet resistance, and then brought from the outer die edge to the die center with current spreading losses through the second bonding layer with high Rsq.

[0045] Figure 6 A schematic diagram illustrates an embodiment of various operations for forming an LED die 600 having a central peak brightness distribution. LED die 600 is similar to LED die 300, with LED die 600 including a segmented electrical edge contact 660 formed on substrate 330 and an additional bonding layer. Edge contact 660 can be formed using a standard metallization process. An n-type via 334 is formed on substrate 330. Silver (Ag) material 336 is located on substrate 330 and surrounds n-type via 334. Silver material 336 is located within the footprint of edge contact 660. Silver material 336 can be applied or positioned using a metallization process.

[0046] A dielectric material 662 (similar to or identical to dielectric material 338) is formed over silver material 336 and around contact 660. Dielectric material 662 is located around n-via 334. Openings are formed in dielectric material 662, exposing silver material 336 underneath.

[0047] The bonding layer, which has a low sheet resistance (lower sheet resistance than bonding layers with high sheet resistance), includes an n-type contact 664 and a p-type contact 666 formed using standard metallization processes. The bonding layer is located above dielectric material 662. N-type contact 664 (note that n-type contact means a contact electrically connected to an n-doped semiconductor, and similarly, p-type contact means a contact electrically connected to a p-doped semiconductor) is electrically connected to n-via 334. P-type contact 666 fills an opening in dielectric material 338 through which silver material 336 is exposed. N-type contact 664 is electrically isolated from p-type contact 666 by the opening that exposes the underlying dielectric material 662.

[0048] A second dielectric material 668 is formed over the n-type contact 664 and the p-type contact 666. The second dielectric material 668 is etched or otherwise processed to expose a portion of the underlying n-type contact 664 and the underlying p-type contact 666. The contacts 664, 666 are metals such as copper, silver, aluminum, or other low-loss conductive materials.

[0049] The bonding layer with high sheet resistance includes a second n-type contact 670 and a second p-type contact 672 formed by a standard metallization process. The bonding layer with high sheet resistance is located above dielectric material 668. N-type contact 670 is electrically connected to n-type contact 664 through an opening in dielectric material 668. P-type contact 672 fills the opening in dielectric material 668, through which p-type contact 666 is exposed. N-type contact 670 is electrically isolated from p-type contact 672 by the opening that exposes the underlying dielectric material 668.

[0050] A third dielectric material 674 is formed over the n-type contact 670 and the p-type contact 672. The third dielectric material 674 is etched or otherwise processed to expose a portion of the underlying n-type contact 670 and the underlying p-type contact 672. The contacts 670, 672 are metals such as copper, silver, aluminum, or other low-loss conductive materials.

[0051] N-type electrical contact 346 may be formed in electrical contact with n-type contact 670 . P-type contact 348 may be formed in electrical contact with p-type contact 672 .

[0052] In cases where one bonding layer cannot achieve the desired current balance between different regions of the die (e.g., where a central peak brightness distribution die is desired), two bonding layers of different thicknesses can be used. The bonding layers can be separated by a dielectric layer 668, with openings formed in the dielectric layer 668. The bonding layer including the n-type contact 664 can be used to shape the brightness of light emitted from the device 600. The bonding layer including the n-type contact 664 is thin enough to have ohmic losses.

[0053] The dielectric layer 668 can have uniformly distributed openings for injecting current into the bonding layer containing the n-type contact 670, which can be used to introduce current into the n-contact edge region located on the outer boundary of the die without ohmic losses. The bonding layer including the n-type contact 670 will have a higher thickness, which will not cause ohmic losses between the injection area and other parts.

[0054] The dielectric layer 674 connects the bonding layer including the n-type contact 670 to the electrical contact pads 346, 348. The dielectric layer 674 has openings only near the peak current region to facilitate current injection in the peak current region.

[0055] Figure 7 The use of Figure 6 Figure 700 shows a current density distribution heat map of a device formed by the method shown in Figure 700. As can be seen, the current concentration in the center of the die is much higher near the opening in the dielectric material 674. This center peak brightness die has been obtained with a 0.1um thick bonding layer (n-type contact 670). The advantage of this method is that there is no need to modify the n-via density or modify the n-via size to achieve brightness. It is worth noting that the level of increase in peak amplitude and the associated Vf increase for this example can be adjusted by modifying the bonding layer thickness.

[0056] Figure 8 By way of example, a cross-sectional view of an embodiment of a light emitting device 300 is shown. Figure 9 By way of example, Figure 8 . The device 300 shown includes a phosphor converter 880 bonded to a sapphire structure 884 by an adhesive 882. The sapphire structure 884 is located on a doped (e.g., n-doped) semiconductor material 886 (e.g., gallium nitride (GaN)). The semiconductor material 886 is located on Figure 3 The structure includes a bonding layer 888 and a dielectric layer 890 that separates the bonding layer 888 from other structures, such as vias 898, ohmic contacts 896, p-doped semiconductor material 894 (e.g., p-doped gallium nitride (GaN)), quantum wells (QWs) 892, etc. A doped under-bump metallization (UBM) 806 is formed on the bonding layer 888. Silver and TiW material 802 is located between the vias 898 and the dielectric 890.

[0057] Figure 10 A schematic diagram is shown to assist in explaining resistance per square (Rsq) by way of example. Resistance = ρL / wt, where ρ is the bulk resistivity (in ohm-meters), L is the length of the resistor, w is the width of the resistor, and t is the thickness of the resistor. Rsq = ρ / t. For example, Rsq = 0.1 ohms / sq can be obtained with 0.265 μm thick Al, where bulk resistivity = 2.65*10 -8 In another example, Rsq = 0.1 ohm / sq can be obtained with 5um thick TiW, where the bulk resistivity = 5*10 -7 Ohm meter.

[0058] Figure 11 A schematic diagram of an embodiment of a portion of an apparatus 300 is shown by way of example. Figure 12 By way of example, a brightness graph of device 300 is shown where the bonding layer has a lower sheet resistance (thicker bonding layer). Figure 13By way of example, a brightness graph of device 300 is shown where the bonding layer has a sheet resistance of approximately 0.1 ohms / sq (a thinner bonding layer). Figure 14 By way of example, a brightness graph of device 300 is shown where the bonding layer has a sheet resistance of approximately 0.15 ohms / sq (and even thinner bonding layers).

[0059] Figure 15 A schematic diagram showing an embodiment of a portion of a device by way of example, the device comprising an opening for an n-contact, the opening being larger than Figure 11 The opening shown in FIG is closer to the center of the epitaxial layer. Figure 16 Shown by way of example Figure 15 Brightness graph of a device where the bonding layer has a lower sheet resistance (thicker bonding layer). Figure 17 Shown by way of example Figure 15 Brightness graph of a device where the bonding layer has a sheet resistance of approximately 0.1 ohm / sq (thinner bonding layer). Figure 18 Shown by way of example Figure 15 Brightness graph of a device where the bonding layer has a sheet resistance of about 0.15 ohm / sq (even thinner bonding layer).

[0060] Figure 19 By way of example, a cross-sectional view of an embodiment of a device 600 is shown. The device includes three buildup layers (BLs) 890, 990, 996, with the third BL 996 and the second BL 990, closer to the doped UBM 806, being thicker than the first BL 890.

[0061] The die with the adjustable light emitting area (die 300 or 600) can be VTF (vertical thin film or embedded contact vertical thin film), CSP (sapphire still on epitaxial layer) or TFFC (thin film flip chip). The area within the die where the n current is injected can have any shape (circular (n via)), but can also be an elongated trench or any other shape.

[0062] The die 300, 600 can be constructed using standard manufacturing processes, using a dielectric layer with openings only near the target peak brightness region and a limited bonding layer thickness.

[0063] In the case of two or more bonding layers, a dielectric layer separates the two bonding layers, the first bonding layer will be thick enough to have no ohmic losses, and the second bonding layer will be thin enough to obtain ohmic losses in the area corresponding to the target brightness pattern. Finally, similar to the case with one bonding layer, the dielectric layer between the electrical pad and the second metal layer will have openings only near the peak current region.

[0064] For either LED die 300, 600, the shaped brightness comes from openings in the dielectric layer closest to the n-contact and p-contact to be driven, located just near the peak current region and the bonding layer (at least on the n-doped portion) where Rsq>0.1Ω / sq.

[0065] A shaped brightness distribution die is defined as a die where the average brightness over an area equal to at least 10% of the entire light emitting area deviates by more than 20% from the average brightness over the entire light emitting area.

[0066] Embodiments may be used in automotive headlamps or lighting where shaped (eg, gradient or peaked) surface brightness is desired for optimal system performance.

[0067] Figure 20 A schematic diagram of an embodiment of a method 2300 for fabricating an LED device with controlled brightness is shown by way of example. Method 2300 can be performed, at least in part, to create device 300, 600, or other components, or combinations thereof. As shown, method 2300 includes: at operation 2302, placing a semiconductor material including an n-doped portion and a p-doped portion on a substrate; at operation 2304, placing a first dielectric material on the semiconductor material; at operation 2306, placing a first bonding layer on the first dielectric material; at operation 2308, placing a second dielectric material on the first bonding layer, the first bonding layer having a thickness extending from the first dielectric material to the second dielectric material and configured to have ohmic losses; and at operation 2310, forming electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively. Method 2300 may also include forming a hole in the second dielectric material, one of the electrical contacts being electrically connected to the first bonding layer through the hole, wherein the hole is sized, shaped, and positioned on the second dielectric material to configure a light pattern generated by the lighting device.

[0068] Light emitting devices such as those described herein can support applications that benefit from fine-grained intensity, spatial, and temporal control of light distribution. This can include, but is not limited to, precise spatial patterning of emitted light. Depending on the application, the emitted light can be spectrally distinct, adaptive over time, and / or environmentally responsive. Arrays of luminous pixels can provide pre-programmed light distributions in various intensity, spatial, or temporal patterns. Common applications supported by arrays of luminous pixels include video lighting, automotive headlights, architectural and area lighting, street lighting, and information displays.

[0069] Lighting devices can be used to selectively and adaptively illuminate buildings or areas to improve visual displays or reduce lighting costs. Additionally, light-emitting devices can be used to project media facades for decorative motion or video effects. In combination with tracking sensors and / or cameras, selective illumination of areas around pedestrians may be possible. Spectrally distinct pixels can be used to adjust the color temperature of lighting and support specific wavelengths of horticultural lighting.

[0070] Street lighting is an application that can benefit from the use of light fixtures. A single light fixture can be used to simulate various streetlight types, allowing, for example, switching between a Type I linear streetlight and a Type IV semicircular streetlight by appropriately activating or deactivating selected pixels. Furthermore, street lighting costs can be reduced by adjusting the intensity or distribution of the light beam based on ambient conditions or time of use. For example, when pedestrians are not present, the light intensity and distribution area can be reduced.

[0071] Vehicle headlights are an application of light-emitting arrays that require a large pixel count and a high data refresh rate. Motor vehicle headlights that actively illuminate only selected portions of the road can be used to reduce problems associated with glare or dazzling oncoming drivers. Using an infrared camera as a sensor, the light-emitting pixel array activates only those pixels needed to illuminate the road, while deactivating pixels that could dazzle pedestrians or drivers of oncoming vehicles. In addition, pedestrians, animals, or signs outside the road can be selectively illuminated to improve the driver's environmental awareness. If the pixels of the light-emitting pixel array are spectrally distinct, the color temperature of the light can be adjusted according to the corresponding daytime, dusk, or nighttime conditions. Some pixels can be used for optical wireless vehicle-to-vehicle communication. The LED light module can include a device alone or in combination with primary or secondary optical devices (including lenses or reflectors).

[0072] To further illustrate the devices and related methods disclosed herein, a list of non-limiting examples is provided below. Each of the following non-limiting examples can exist independently or in any arrangement or combination with any one or more of the other examples.

[0073] In Example 1, a lighting device includes: a p-doped semiconductor material; an n-doped semiconductor material; a first dielectric material and a second dielectric material; a bonding layer located between the first dielectric material and the second dielectric material, the bonding layer including a high sheet resistance such that it is configured to have ohmic losses; and electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material.

[0074] In Example 2, Example 1 also includes wherein the thickness of the bonding layer is less than or equal to one micrometer.

[0075] In Example 3, at least one of Examples 1-2 further includes a hole in the second dielectric material, one of the electrical contacts being electrically connected to the bonding layer through the hole.

[0076] In Example 4, Example 3 also includes, wherein the apertures are sized, shaped, and positioned in the second dielectric material to configure a light pattern produced by the lighting device.

[0077] In Example 5, at least one of Examples 1-4 further includes wherein the n-doped semiconductor material and the p-doped semiconductor material include gallium nitride.

[0078] In Example 6, at least one of Examples 1-5 further includes an opening in the first dielectric material and the second dielectric material, the opening being within a footprint of one of the electrical contacts.

[0079] In Example 7, at least one of Examples 1-6 further includes a substrate, and a continuous, solid edge electrical contact around an edge of the substrate.

[0080] In Example 8, Example 7 further includes an n-via within the edge electrical contact.

[0081] In Example 9, Example 8 also includes wherein the n-vias are uniformly distributed within the edge electrical contact.

[0082] Example 10 includes a lighting device comprising: a p-doped semiconductor material; an n-doped semiconductor material; a first dielectric material, a second dielectric material, and a third dielectric material on the semiconductor material; a first bonding layer located between the first dielectric material and the second dielectric material, the first bonding layer having a thickness extending from the first dielectric material to the second dielectric material and configured to have ohmic losses; a second bonding layer located between the second dielectric material and the third dielectric material, the second bonding layer having a thickness extending from the second bonding material to the third bonding material and configured to have ohmic losses; and electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively.

[0083] In Example 11, Example 10 also includes wherein a thickness of the first bonding layer is less than or equal to one micrometer and less than a thickness of the second bonding layer.

[0084] In Example 12, at least one of Examples 10-11 further includes a hole in the third dielectric material, one of the electrical contacts being electrically connected to the second bonding layer through the hole.

[0085] In Example 13, Example 12 also includes, wherein the apertures are sized, shaped, and positioned in the third dielectric material to configure a light pattern generated by the lighting device.

[0086] In Example 14, according to at least one of Examples 10-13, wherein the n-doped semiconductor material and the p-doped semiconductor material include gallium nitride.

[0087] In Example 15, at least one of Examples 10-14 further includes openings in the first dielectric material, the second dielectric material, and the third dielectric material, the openings being within footprints of corresponding ones of the electrical contacts.

[0088] In Example 16, at least one of Examples 10-15 further includes a substrate, and a segmented edge electrical contact around an edge of the substrate.

[0089] In Example 17, Example 16 further includes an n-via within the edge electrical contact.

[0090] In Example 18, Example 17 also includes wherein the n-vias are uniformly distributed within the edge electrical contact.

[0091] Example 19 includes a method of manufacturing a lighting device, the method comprising: placing a semiconductor material including an n-doped portion and a p-doped portion on a substrate; placing a first dielectric material on the semiconductor material; placing a first bonding layer on the first dielectric material; placing a second dielectric material on the first bonding layer, the first bonding layer having a thickness extending from the first dielectric material to the second dielectric material and being configured to have ohmic losses; and forming electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively.

[0092] In Example 20, Example 19 further includes forming a hole in the second dielectric material, one of the electrical contacts being electrically connected to the first bonding layer through the hole, wherein the hole is sized, shaped, and positioned on the second dielectric material to configure a light pattern generated by the lighting device.

[0093] Although example embodiments of the disclosed subject matter have been shown and described herein, it will be apparent to those skilled in the art that such embodiments are provided by way of example only. Many variations, changes, and substitutions will occur to those skilled in the art upon reading and understanding the material provided herein without departing from the disclosed subject matter. It should be understood that in practicing various embodiments of the disclosed subject matter, various embodiments of the disclosed subject matter described herein may be employed.

[0094] It is intended that the following claims define the scope of the disclosed subject matter, and that

[0095] This invention covers methods and structures within the scope of these claims and their equivalents.

Claims

1. A lighting device comprising: p-doped semiconductor material; n-doped semiconductor material; a first dielectric material and a second dielectric material; a bonding layer between the first dielectric material and the second dielectric material, the bonding layer comprising a high sheet resistance such that it is configured to have high ohmic losses; and An electrical contact is electrically connected to the n-doped semiconductor material and the p-doped semiconductor material. The lighting device according to claim 1 , wherein the high-ohmic loss is greater than 0.06 ohm / sq. 3 . The lighting device of claim 1 , further comprising a hole in the second dielectric material, one of the electrical contacts being electrically connected to the bonding layer through the hole.

4. The lighting device according to claim 3, wherein: The apertures are sized, shaped and positioned in the second dielectric material to configure a light pattern produced by the lighting device such that a footprint of the apertures covers an area where the surface brightness is at least greater than 70% of the maximum brightness provided by the device. 5 . The lighting device of claim 1 , wherein the n-doped semiconductor material and the p-doped semiconductor material comprise gallium nitride.

6. The lighting device of claim 1, further comprising an opening in the first dielectric material and the second dielectric material, the opening being within a footprint of one of the electrical contacts.

7. The lighting device according to claim 1, further comprising: substrate; and A continuous, solid edge electrical contact around the edge of the substrate.

8. The lighting device according to claim 7, further comprising: n-vias within the edge electrical contacts. 9 . The lighting device of claim 8 , wherein the n-type vias are uniformly distributed within the edge electrical contact.

10. A lighting device comprising: p-doped semiconductor material; n-doped semiconductor material; a first dielectric material, a second dielectric material, and a third dielectric material; a first bonding layer positioned between the first dielectric material and the second dielectric material, the first bonding layer having a thickness extending from the first dielectric material to the second dielectric material and configured to have ohmic losses; a second bonding layer positioned between the second dielectric material and the third dielectric material, the second bonding layer having a thickness extending from the second bonding material to the third bonding material and configured to have ohmic losses; and Electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively. The lighting device according to claim 10 , wherein a thickness of the first bonding layer is less than or equal to one micrometer and is less than a thickness of the second bonding layer.

12. The lighting device of claim 10, further comprising a hole in the third dielectric material, one of the electrical contacts being electrically connected to the second bonding layer through the hole.

13. The lighting device of claim 12, wherein the apertures are sized, shaped, and positioned in the third dielectric material to configure a light pattern produced by the lighting device.

14. The lighting device of claim 10, wherein the n-doped semiconductor material and the p-doped semiconductor material comprise gallium nitride.

15. The lighting device of claim 10, further comprising openings in the first dielectric material, the second dielectric material, and the third dielectric material, the openings being within footprints of corresponding ones of the electrical contacts.

16. The lighting device according to claim 10, further comprising: substrate; and The edges of the segments around the edge of the substrate are electrically contacted.

17. The lighting device according to claim 16, further comprising: n-vias within the edge electrical contacts. The lighting device of claim 17 , wherein the n-vias are uniformly distributed within the edge electrical contact.

19. A method for manufacturing a lighting device, the method comprising: placing a semiconductor material including an n-doped portion and a p-doped portion on a substrate; placing a first dielectric material on the semiconductor material; placing a first bonding layer on the first dielectric material; placing a second dielectric material on the first bonding layer, the first bonding layer having a thickness extending from the first dielectric material to the second dielectric material and configured to have ohmic losses; and Electrical contacts are formed that are electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively.

20. The method of claim 19, further comprising forming a hole in the second dielectric material, one of the electrical contacts being electrically connected to the first bonding layer through the hole, wherein the hole is sized, shaped, and positioned on the second dielectric material to configure a light pattern generated by the lighting device.

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