Wafer heating and cooling processing integrated cavity and control method thereof

Abstract

The application discloses a wafer heating and cooling processing integrated cavity and a control method thereof. The integrated cavity comprises a cavity assembly, a support assembly, a heating assembly and a cooling disc. The cavity assembly forms a closed cavity. The support assembly is arranged in the cavity and comprises a support base, a lifting shaft and wafer support plates. The wafer support plates comprise a first support plate for carrying a first wafer and a second support plate for carrying a second wafer. The heating assembly is mounted outside the cavity and is used for radiation heating of the wafers. The cooling disc is arranged on the opposite side of the heating assembly in the axial direction. A temperature monitoring unit comprises a first temperature sensor arranged on the first support plate and used for monitoring the temperature of the first wafer, and a second temperature sensor arranged on the cooling disc and used for monitoring the temperature of the second wafer. The first wafer is heated and the second wafer is cooled synchronously in the same cavity, so that the overall wafer processing process time is effectively shortened, the utilization efficiency of the integrated cavity is improved, and the production efficiency of the wafers is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a wafer heating and cooling processing integrated cavity and a control method thereof. BACKGROUND

[0002] In the semiconductor manufacturing process, thin film deposition is a key step. Thin film deposition needs to be carried out in a high cleanliness and high vacuum environment to prevent contamination and damage to the wafer, and to ensure the quality and uniformity of the thin film. In the thin film deposition equipment, the load lock cavity, the heating and degassing chamber and the cooling chamber are important parts of the equipment. The load lock cavity is used for the transition of the equipment from the atmosphere to the vacuum, so that the process cavity can always be in a high cleanliness and high vacuum environment to ensure the smooth progress of the process. The heating and degassing chamber is used to heat and remove water vapor and volatile impurities on the surface of the wafer to ensure the quality of the film coating on the wafer surface; the cooling chamber is used to cool the coated wafer to ensure that the temperature of the wafer is within a reasonable range when it is transmitted to the wafer boat that carries the wafer.

[0003] In the existing technology, heating and cooling are generally carried out in two chambers. The transmission of wafers between different chambers and the time difference between the heating and cooling processes result in low wafer production efficiency. In the Chinese patent document with the application publication number CN119465018A, a degassing cavity for a PVD device is disclosed, which includes a PVD cavity, a heater is arranged in the PVD chamber, a first cooling cover is arranged on one side, and a second cooling cover is arranged on the other side; the first cooling cover side is provided with a first rotating shaft and a first cooling structure, and the second rotating shaft rotates the second cooling structure into the second cooling cover or above the heater through a mechanical arm. It can reduce the waiting time of the wafer in the degassing cavity and save the time of entering the main process chamber, and to a certain extent, it can improve the production efficiency of the machine. However, the heating and cooling of the wafer are still carried out in the order of heating first and then cooling, and the sequential mode of single wafer is adopted, which cannot realize the synchronous heating and cooling of double wafers, and the improvement of wafer production efficiency is limited. SUMMARY

[0004] The purpose of the present application is to provide a wafer heating and cooling processing integrated cavity and a control method thereof, which can realize the synchronous heating and cooling of two wafers in the same chamber, improve the utilization rate of the cavity, effectively shorten the overall wafer processing process time, and improve the production efficiency of the wafer.

[0005] To solve the above technical problems, embodiments of the present application provide a technical solution as follows: A wafer heating and cooling processing integrated cavity comprises: a cavity assembly forming a sealed cavity; a support assembly arranged in the cavity, comprising a support base, a lifting shaft and a wafer support plate; the wafer support plate comprises a first support plate for carrying a first wafer and a second support plate for carrying a second wafer; one end of the lifting shaft is connected to the support base, and the other end is connected to a transmission mechanism to drive the support assembly to lift; a heating assembly: mounted on the outside of the cavity and axially aligned with the first support plate and the second support plate, used for radiation heating of the first wafer; a cooling disc: arranged at the bottom of the cavity, comprising a cooling table and a connecting end, the cooling table is located on the opposite side of the heating assembly in the axial direction, and the connecting end extends to the outside of the cavity and is connected to a cooling fluid circulating device through a cooling fluid connection port; a temperature monitoring unit comprising a first temperature sensor arranged on the first support plate for monitoring the temperature of the first wafer; a second temperature sensor arranged on the cooling table for monitoring the temperature of the second wafer; wherein when the lifting shaft drives the support assembly to descend, the second wafer on the second support plate abuts against the cooling table for cooling, and at the same time the heating assembly radiates heat to the first wafer.

[0006] Further, the cavity assembly comprises a cavity, a cavity cover mounted on the top of the cavity, a mounting plate connected to the cavity cover, and a light-transmitting plate connected to the mounting plate, the cavity, the cavity cover, the mounting plate, the light-transmitting plate and the cooling disc collectively form a sealed cavity, and the heating assembly is fixed on the outside of the mounting plate.

[0007] Further, the light-transmitting plate has a light transmittance of greater than 90% for the radiation light of the heating assembly, so that the radiation light penetrates through the light-transmitting plate to heat the wafer.

[0008] Further, the light-transmitting plate is made of any one of quartz, sapphire or transparent ceramic.

[0009] Further, the wafer support plate is made of any one of glass, sapphire or transparent ceramic.

[0010] Further, the connecting end of the cooling disc is provided with a cooling fluid inlet and a cooling fluid outlet, which are respectively connected to the cooling fluid circulating device to form a closed loop flow path.

[0011] Further, when the second wafer abuts against the cooling table, the second temperature sensor directly contacts the surface of the second wafer.

[0012] Further, the wafer heating and cooling processing integrated cavity supports four working modes:

[0013] Double-wafer mode: simultaneously heating the first wafer and cooling the second wafer;

[0014] Single wafer heating mode: heating the first wafer or the second wafer alone;

[0015] Single wafer cooling mode: cooling the second wafer alone;

[0016] Single wafer sequential mode: heating and then cooling the second wafer.

[0017] To solve the above technical problems, the application further provides a wafer heating and cooling processing integrated cavity control method for the wafer heating and cooling processing integrated cavity control, comprising the following steps: calculating a cooling flow function according to a mutual radiation influence relationship between first wafer heating and second wafer cooling, and obtaining a function relationship between a cooling fluid flow Q and temperatures of the first wafer and the second wafer; based on the cooling flow function, adjusting and controlling the cooling fluid flow Q in real time according to temperature changes of the first wafer and the second wafer, and controlling the second wafer cooling time to be synchronized with the first wafer heating time.

[0018] Further, the cooling flow function calculation step comprises:

[0019] According to temperature changes of the first wafer and the second wafer during the first wafer heating process, a relationship between the second wafer temperature B and the first wafer temperature A and the first temperature sensor temperature TA is obtained: B=g(A)=g[f(TA)];

[0020] According to temperature changes of the first wafer and the second wafer in a state of not starting the cooling disc, a relationship between the second wafer temperature BB and the first wafer temperature AA and the first temperature sensor temperature TAA is obtained: BB=g[f(TAA)]+k2(AA-BB);

[0021] According to a heating time required by a process, the second wafer cooling time is synchronized, and a relationship between the cooling fluid flow Q and the second wafer temperature BB is obtained: Q=m(BB);

[0022] The heating assembly and the cooling disc are started at the same time, according to first wafer temperature AAA and second wafer temperature BBB changes, a function relationship between the first wafer temperature AAA and the first temperature sensor TAAA is corrected: AAA=f(TAAA)+k1(AAA-BBB)+n1(BB0-BBB), and a function relationship between the second wafer temperature BBB and the first wafer temperature AAA and the first temperature sensor TAAA is corrected: BBB=g[f(TAAA)]+k2(AAA-BBB)+n2(BB0-BBB), wherein BB0 is an initial temperature of the second wafer to be cooled;

[0023] The function of the cooling fluid flow Q with the first temperature sensor TAAA, the first wafer temperature AAA and the second wafer temperature BBB is corrected to obtain the cooling flow function:

[0024] .

[0025] The wafer heating and cooling processing integrated cavity provided by the present application, compared with the prior art, through the first wafer and the second wafer arranged in layers in the same cavity, and the heating assembly corresponding to the first wafer and the cooling disc corresponding to the second wafer, the heating and cooling of different wafers can be synchronized, that is, the heating of the first wafer and the cooling of the second wafer in the same cavity are synchronized, the overall wafer processing process time is effectively shortened, the utilization efficiency of the integrated cavity is improved, the overall operation efficiency of the thin film deposition equipment is improved, and the production efficiency of the wafer is further improved. The wafer heating and cooling processing integrated cavity control method provided by the present application, based on the mutual radiation influence relationship of the first wafer heating and the second wafer cooling, through the control of the flow of the cooling fluid in the cooling disc, realizes the effect that the first wafer is heated and the second wafer is cooled in the same cavity, effectively improves the utilization efficiency of the integrated cavity, effectively shortens the overall wafer processing process time, improves the overall operation efficiency of the thin film deposition equipment, and further improves the production efficiency of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0026] One or more embodiments are illustrated by way of example in the accompanying drawings that are not intended to be limiting of the embodiments. Like reference numbers in the drawings indicate like elements, unless otherwise specified. The drawings are not necessarily to scale, the emphasis instead being placed upon illustrating the principles of the embodiments.

[0027] Figure 1 The wafer heating and cooling processing integrated cavity cross-sectional structure schematic diagram in the embodiment of the present application;

[0028] Figure 2 The wafer heating and cooling processing integrated cavity cross-sectional structure schematic diagram in the embodiment of the present application;

[0029] Figure 3 The wafer heating and cooling processing integrated cavity cross-sectional structure schematic diagram in the embodiment of the present application;

[0030] Figure 4 The wafer heating and cooling processing integrated cavity cross-sectional structure schematic diagram in the embodiment of the present application;

[0031] Figure 5 The wafer heating and cooling processing integrated cavity control method step flow chart in the embodiment of the present application.

[0032] Explanation of reference numerals in the attached drawings: 1. Cavity; 100. Chamber; 2. Cavity cover; 3. Mounting plate; 4. Light-transmitting plate; 5. Heating assembly; 51. LED bead; 6. Cooling plate; 61. Cooling platform; 62. Connecting end; 7. Cooling fluid connection port; 71. Cooling fluid inlet; 72. Cooling fluid outlet; 8. Second temperature sensor; 81. Sensor output port; 9. First wafer; 10, 16. First support plate; 11, 13, 17, 19. Wafer support; 12, 18. Second support plate; 14. Support base; 15. Second wafer; 20. Lifting shaft; 21. First cover plate; 22. First temperature sensor. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this invention clearer, the various embodiments of this invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the various embodiments of this invention to facilitate a better understanding of this application. However, the technical solutions claimed in the claims of this application can be implemented even without these technical details and with various variations and modifications based on the following embodiments.

[0034] It should be noted that if the embodiments of this application involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0035] like Figures 1-4 As shown, one embodiment of the present invention relates to an integrated cavity for wafer heating and cooling, comprising: a cavity assembly, the cavity assembly having a sealed chamber 100, the sealed chamber 100 being connected to a vacuum pump (not shown in the figure), the sealed chamber 100 having a support assembly and a cooling plate 6 inside, and a heating assembly 5 being provided on the side of the cavity 100 opposite to the cooling plate 6 in the axial direction.

[0036] The support assembly comprises a support base 14, a lifting shaft 20 and wafer support plates. One end of the lifting shaft 20 is connected to the support base 14, and the other end is connected to a transmission mechanism (not shown in the figure) to drive the support assembly to lift. The wafer support plates are stacked on the support base 14, including the first support plates 10, 16 for supporting the first wafer 9 and the second support plates 12, 18 for supporting the second wafer 15. To increase the stability of the wafer placement, each wafer is supported by multiple wafer support plates, and the contact surfaces of the wafer support plates with the same wafer are located in the same plane. In one example, the first wafer 9 is supported by the first support plates 10, 16, and the second wafer 15 is supported by the second support plates 12, 18. The first wafer 9 and the second wafer 15 are arranged in parallel and spaced apart. The first support plates 10 and the second support plates 12 are fixed to one side of the support base 14 through wafer supports 11, 13, and the first support plates 16 and the second support plates 18 are fixed to the other side of the support base 14 through wafer supports 17, 19. The contact surfaces of the first support plates 10, 16 with the first wafer are located in the same plane, and the contact surfaces of the second support plates 12, 18 with the second wafer are located in the same plane. In one example, the first support plates 10, 16 and the second support plates 12, 18 are made of stainless steel or aluminum alloy. Preferably, the first support plates 10, 16 and the second support plates 12, 18 are made of glass, sapphire, transparent ceramic, etc. to reduce the blocking of the radiation of the heating assembly and improve the wafer heating efficiency and temperature uniformity. The first wafer 9 and the second wafer 15 can also be positioned and supported by three, four, etc. wafer support plates uniformly distributed around them, respectively.

[0037] The heating assembly 5 is installed outside the chamber 100 and axially aligned with the first support plates 10, 16 and the second support plates 12, 18 for radiation heating of the first wafer 9. Preferably, the heating assembly 5 is provided with lamp beads 51 towards the wafer support plates, which are arranged in multiple concentric circles or in a matrix array, and radiate the wafer by emitting radiation light. The cooling disc 6 is arranged at the bottom of the chamber 100 and includes a cooling table 61 arranged in the chamber 100 at the axially opposite side of the heating assembly 5 and a connecting end 62 extending outside the chamber 100 and connected with a cooling fluid circulating device (not shown) through a cooling fluid connecting port 7. The first wafer 9 and the second wafer 15 are located between the heating assembly 5 and the cooling disc 6, wherein the first wafer 9 is arranged close to the heating assembly 5 and the second wafer 15 is arranged close to the cooling disc 6. Under the driving of the transmission structure, the lifting shaft 20 can drive the support assembly to move up and down to abut the second wafer 15 against the cooling table 61 for cooling, while the heating assembly 5 radiates the first wafer 9. For example, a wafer to be heated is taken from an EFEM (Equipment Front End Module) as the first wafer 9 and placed on the first support plates 10, 16 in the chamber 100, a wafer to be cooled after process is returned from a TM (Transfer Module) side as the second wafer 15 and placed on the second support plates 12, 18, the second wafer 15 is placed on the cooling disc 6 by lowering the support assembly, i.e. the lower end surface of the second wafer 15 is in surface contact with the cooling table 61, the heating assembly 5 is turned on for radiation heating and the cooling fluid circulating of the cooling disc 6 is started, after the heating and cooling are completed, the first wafer 9 is taken out from the TM side for process treatment, the support assembly is raised and drives the second wafer 15 to move upward to be separated from the cooling disc 6, so that the second wafer 15 is taken out by the robot and placed in the EFEM.

[0038] In one example, the cavity assembly includes a cavity 1, a cavity cover 2 installed at the top of the cavity 1, a mounting plate 3 connected with the cavity cover 2, a light-transmitting plate 4 connected with the mounting plate 3, the cavity 1, the cavity cover 2, the mounting plate 3, the light-transmitting plate 4 and the cooling disc 6 together form a sealed chamber 100, and the heating assembly 5 is installed outside the mounting plate 3. In order to increase the sealing effect of the chamber 100, the cavity 1 and the cavity cover 2, the cavity cover 2 and the mounting plate 3, the mounting plate 3 and the light-transmitting plate 4, and the connecting end 62 between the cavity 1 and the cooling disc 6 are all sealed and connected by O-rings, and the chamber 100 is vacuumized by a vacuum pump connected with the cavity 1, so that the vacuum degree of the chamber 100 can meet the process requirements of wafer processing.

[0039] In one example, a wafer heating, cooling processing integrated cavity is provided with a temperature monitoring unit, which includes a first temperature sensor 22 arranged on the first support plate 10, 16, a second temperature sensor 8 arranged on the cooling table 61, and a third temperature sensor (not shown in the figure) arranged inside the cooling disc. The first temperature sensor 22 is used for monitoring the temperature of the first wafer 9, the second temperature sensor 8 is used for monitoring the temperature of the second wafer 15, and the third temperature sensor is used for monitoring the temperature of the cooling disc 6 body. When the process safety is ensured, the third temperature sensor is provided with a safety alarm threshold, and when the temperature of the cooling disc 6 reaches the threshold, an alarm is sent, and the temperature of the cooling disc 6 is abnormal, so that the operator can confirm the processing in time; in order to improve the accuracy of the temperature sensor to the wafer temperature feedback, the end of the first temperature sensor 22 is arranged as close to the first wafer 9 as possible, and is fixed on the first support plate 10, 16 through the first cover plate 21, so as to improve the accuracy of the temperature signal feedback of the first temperature sensor 22. Preferably, the distance between the temperature measuring point at the end of the first temperature sensor 22 and the edge of the first wafer 9 is 3-6 mm, and the signal line of the first temperature sensor 22 is connected to the external PLC through the through hole in the middle of the lifting shaft 20, and the temperature signal is fed back to the external control device (not shown in the figure) for transmission of the first wafer 9 temperature signal. Preferably, in order to further improve the stability and safety of the first wafer 9 temperature monitoring, a plurality of first temperature sensors 22 can also be arranged, such as one first temperature sensor 22 arranged at each end of the first support plate 10, 16, that is, four first temperature sensors 22 are used for monitoring the first wafer 9. The second temperature sensor 8 is arranged on the cooling table 61, and when the second wafer 15 is in abutting contact with the cooling table 61, the second temperature sensor 8 directly contacts the surface of the second wafer 15 to measure the temperature of the second wafer 15. The signal line of the second temperature sensor 8 is connected with the external control device through the sensor output port 81 arranged on the connecting end 62, and the second wafer 15 temperature signal is fed back.

[0040] In one example, the cavity 1 is provided with a functional interface, including a wafer loading port (not shown in the figure) and a wafer transmission port (not shown in the figure) arranged on both sides of the cavity 1 respectively. The wafer loading port is used to connect with the EFEM (Equipment Front End Module) to facilitate the robot to grab the wafer from the EFEM end and send it into the cavity 100; the wafer transmission port is used to connect with the TM (Transfer Module) to facilitate the transmission of the wafer between the multiple cavities 100 inside the equipment. Preferably, the cavity 1 is also connected with an air inlet device (not shown in the figure) which communicates with the cavity 100, so that the cavity 1 has the function of load locking in addition to the heating and degassing function, and a small amount of inert gas such as N2 or Ar can be introduced into the cavity 100 when the heating assembly 5 is radiantly heated, thereby improving the effect of heating and degassing.

[0041] One embodiment of the present application relates to a wafer heating and cooling processing integrated cavity, wherein the material of the light-transmitting plate 4 is any one of quartz, sapphire or transparent ceramic, the heating assembly 5 radiates light through the light-transmitting plate 4 to heat the first wafer 9, and the light-transmitting rate of the light-transmitting plate 4 to the light radiated by the heating assembly 5 is greater than 90%.

[0042] One embodiment of the present application relates to a wafer heating and cooling processing integrated cavity, wherein the cooling disc 6 comprises a cooling table 61 and a connecting end 62, the cooling table 61 is arranged in the cavity 100, the connecting end 62 extends through the bottom of the cavity 1 and is communicated with the cooling fluid circulating device, the connecting end 62 is provided with a cooling fluid inlet 71 and a cooling fluid outlet 72 at the end, the cooling fluid inlet 71 and the cooling fluid outlet 72 are respectively communicated with the cooling fluid circulating device to form a closed loop flow path, so that the cooling fluid enters the inside of the cooling disc 6 and cools the wafer abutting against the cooling table 61.

[0043] The wafer heating and cooling processing integrated cavity provided by the present application can provide four working modes according to actual conditions:

[0044] Double-wafer mode: synchronously heating the first wafer 9 and cooling the second wafer 15; that is, placing the first wafer 9 to be heated on the first support plate 10, 16 and placing the second wafer 15 to be cooled on the second support plate 12, 18, and through the descent of the support assembly, the second wafer 15 is placed on the cooling table 61, and the heating assembly 5 and the cooling disc 6 are started to synchronously heat the first wafer 9 and cool the second wafer 15.

[0045] Single-wafer heating mode: separately heating the first wafer 9 or the second wafer 15; that is, placing the first wafer 9 to be heated on the first support plate 10, 16, adjusting the distance between the first wafer 9 and the heating assembly 5 through the lifting movement of the support assembly, and starting the heating assembly 5 to heat the first wafer 9; or placing the second wafer 15 to be heated on the second support plate 12, 18, adjusting the distance between the second wafer 15 and the heating assembly 5 through the lifting movement of the support assembly, and starting the heating assembly 5 to heat the second wafer 15.

[0046] Single-wafer cooling mode: separately cooling the second wafer 15; that is, placing the second wafer 15 to be cooled on the second support plate 12, 18, through the descent movement of the support assembly, the second wafer 15 is placed on the cooling table 61, and the cooling disc 6 is started to cool the second wafer 15.

[0047] The single wafer sequential mode is: heating and then cooling the second wafer 15; that is, the second wafer 15 is placed on the second support plate 12, 18, the distance between the second wafer 15 and the heating assembly 5 is adjusted through the lifting movement of the support assembly, the heating assembly 5 is turned on to heat the second wafer 15, after the heating is completed, the second wafer 15 is attached to the cooling table 61 through the descending movement of the support assembly, and the cooling disc 6 is started to cool the second wafer 15.

[0048] As shown in Figure 5 To solve the technical problems proposed in the present application, realize the synchronous processing of heating and cooling two wafers respectively in the same chamber 100, improve the synchronization of wafer heating and cooling process, improve the wafer heating efficiency and cooling efficiency, and improve the utilization rate of the cavity 1, an embodiment of the present application provides a wafer heating and cooling processing integrated cavity control method for controlling the wafer heating and cooling processing integrated cavity, which comprises the following steps:

[0049] According to the mutual radiation influence relationship between the heating of the first wafer 9 and the cooling of the second wafer 15, the function relationship between the cooling fluid flow rate Q of the cooling disc 6 and the temperature of the first wafer 9 and the second wafer 15 is calculated to obtain the cooling flow function;

[0050] Based on the cooling flow, according to the temperature change of the first wafer 9 and the second wafer 15, the cooling fluid flow rate Q is adjusted and controlled in real time, and the cooling time of the second wafer 15 is controlled to be synchronized with the heating time of the first wafer 9.

[0051] The calculation steps of the cooling flow function include:

[0052] According to the temperature change of the first wafer 9 and the second wafer 15 during the heating process of the first wafer 9, the relationship between the second wafer temperature B and the first wafer temperature A and the first temperature sensor temperature TA is obtained: B=g(A)=g[f(TA)];

[0053] In one example, the implementation is as follows: two wafers are placed in the chamber, the first wafer 9 is placed on the first support plate 10, 16, and the second wafer 15 is placed on the cooling table 61. The cooling disc 6 is not started, that is, the flow of the cooling fluid inside the cooling disc 6 is zero. A temperature detector is placed on the surface of the first wafer 9 to measure the temperature of the first wafer 9. The temperature measured by the temperature detector is the temperature of the first wafer. The temperature of the second wafer is measured by the second temperature sensor 8 abutting the surface of the second wafer 15. The temperature measured by the second temperature sensor 8 is the temperature of the second wafer. With a temperature gradient of 10°C, the first temperature sensor temperature, the first wafer temperature, and the second wafer temperature are recorded as shown in Table 1 Temperature Calibration Data Record Table. The relationship between the second wafer temperature B under the influence of the first wafer 9 radiation and the first wafer temperature A and the first temperature sensor temperature TA is calculated: B = g(A) = g[f(TA)], wherein g and f are correction coefficients obtained according to the Table 1 Temperature Calibration Data Record Table.

[0054] Table 1 Temperature Calibration Data Record Table

[0055]

[0056] Under the condition that the cooling disc is not started, according to the temperature change of the second wafer 15 to be cooled and the first wafer 9, the relationship between the second wafer temperature BB and the first wafer temperature AA and the first temperature sensor temperature TAA is obtained: BB = g[f(TAA)] + k2(AA-BB).

[0057] In one example, the implementation is as follows: the two wafers in the above steps are removed from the cavity, and the wafer to be cooled after process treatment is placed as the second wafer 15 on the cooling table 61 of the cooling disc 6. The temperature of the second wafer 15 at this time is measured by the second temperature sensor 8 as B0, which is the initial temperature BO of the second wafer 15 to be cooled by the subsequent cooling disc. A wafer is loaded from the EFEM side as the first wafer 9 into the chamber. At this time, the temperature of the second wafer on the cooling disc 6 is B0, and the cooling fluid circulation is not started. The first temperature sensor temperature, the first wafer temperature, and the second wafer temperature are recorded as shown in Table 2 Second Wafer Radiation Influence Data Record Table.

[0058] Due to the high temperature of the second wafer on the cooling disc 6 and the low temperature of the first wafer, the second wafer temperature is affected by the thermal radiation of the second wafer 15, and the first wafer temperature is affected by the thermal radiation of the second wafer 15. During the temperature change of the first wafer and the second wafer, there is mutual influence between them. According to the recorded data in Table 2, the relationship between the first wafer and the first temperature sensor is: AA = f(TAA) + k1(AA-BB), and the relationship between the second wafer and the first wafer and the second temperature sensor is: BB = g[f(TAA)] + k2(AA-BB). Wherein, k1 and k2 are correction coefficients obtained according to the Table 2 Second Wafer Radiation Influence Data Record Table.

[0059] Table 2 Second wafer radiation effect data record table

[0060]

[0061] According to the heating time of the process requirement, the cooling time of the second wafer 15 is synchronized, and the relationship between the flow rate Q of the cooling fluid and the second wafer temperature BB is obtained: Q=m(BB);

[0062] In one example, the implementation is as follows: according to the first wafer 9 heating time of the process requirement, in order to keep the second wafer 15 cooling time synchronized with the heating time, the time from the start of the first wafer 9 heating to the completion of the heating is consistent with the time from the start of the second wafer 15 cooling to the completion of the cooling, through test or calculation, the corresponding cooling rate of the second wafer 15 can be obtained, and the experimental data of the second wafer temperature and the cooling fluid flow rate are recorded, as shown in Table 3 cooling flow data record table, and then the function relationship between the flow rate Q of the cooling fluid in the cooling disc 6 and the second wafer temperature BB is obtained: Q=m(BB), wherein m is a correction coefficient.

[0063] Table 3 Cooling flow data record table

[0064]

[0065] At the same time, the heating assembly and the cooling disc 6 are started, according to the changes of the first wafer temperature AAA and the second wafer temperature BBB, the function relationship between the first wafer temperature AAA and the first temperature sensor TAAA is corrected as: AAA=f(TAAA)+k1(AAA-BBB)+n1(BB0-BBB), and the function relationship between the second wafer temperature BBB and the first wafer temperature AAA, the first temperature sensor TAAA is corrected as: BBB=g[f(TAAA)]+k2(AAA-BBB)+n2(BB0-BBB), wherein BB0 is the initial temperature of the second wafer to be cooled;

[0066] The function relationship between the cooling fluid flow rate Q and the first temperature sensor TAAA, the first wafer temperature AAA, and the second wafer temperature BBB is corrected to obtain the cooling flow function:

[0067] .

[0068] In one example, the implementation is as follows: two wafers in the above steps are removed from the cavity, a piece of wafer to be heated is loaded from the EFEM end into the chamber as the first wafer 9, and a piece of wafer to be cooled is loaded from the TM end and placed on the cooling table as the second wafer 15. The cooling fluid circulation device is started, the cooling fluid is introduced into the cooling disc 6 according to the relationship function Q=m(BB), and at the same time the heating assembly 5 is started to heat the first wafer 9. The data is recorded as shown in Table 4, and the function relationship between the first wafer temperature AAA and the first temperature sensor temperature TAAA can be obtained according to the data: AAA=f(TAAA)+k1(AAA-BBB)+n1(BB0-BBB), and the function relationship between the second wafer temperature BBB and the first temperature sensor temperature TAAA is: BBB=g[f(TAAA)]+k2(AAA-BBB)+n2(BB0-BBB), wherein n1, n2 are correction coefficients, and BB0 is the initial temperature of the second wafer 15 to be cooled. Thus, when the first wafer 9 is heated and the second wafer 15 is cooled simultaneously, the cooling flow function based on the relationship between the cooling fluid flow Q and the first temperature sensor TAAA, the first wafer temperature AAA and the second wafer temperature BBB is:

[0069]

[0070] Table 4: Temperature data recording table of simultaneously heated and cooled wafers

[0071]

[0072] When in use, a piece of wafer to be heated is taken from the EFEM as the first wafer 9 and placed on the first support plate 10, 16 in the chamber 100, and a piece of process-finished wafer to be cooled is returned from the TM side as the second wafer 15 and placed on the second support plate 12, 18. The second wafer 15 is placed on the cooling table 61 of the cooling disc 6 by driving the support assembly to descend through the lifting shaft 20. At the same time, the radiation heating of the heating assembly 5 and the circulating cooling fluid of the cooling disc 6 are turned on, and the cooling flow function is followed:

[0073]

[0074] The process control is carried out, and when the wafer heating and cooling are completed simultaneously, the first wafer 9 is taken out from the TM side for process treatment. The second wafer 15 is separated from the cooling disc 6 by driving the support assembly to rise through the lifting shaft 20, and is taken out from the EFEM side and placed back into the EFEM.

[0075] The wafer heating and cooling processing integrated cavity provided by the application is characterized in that: the first wafer and the second wafer are arranged in layers in the same cavity, and the heating assembly corresponding to the first wafer and the cooling disc corresponding to the second wafer are arranged, so that the heating and cooling of different wafers can be carried out synchronously, that is, the heating of the first wafer and the cooling of the second wafer are carried out synchronously in the same cavity, the overall wafer processing process time is effectively shortened, the utilization efficiency of the integrated cavity is improved, the overall operation efficiency of the thin film deposition equipment is improved, and the production efficiency of the wafer is further improved.

[0076] Although the application has been disclosed with the preferred embodiments as above, it is not intended to limit the application, and any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the application, so the protection scope of the application is defined by the claims.

Claims

1. A method for controlling a wafer heating and cooling process integrated chamber, characterized by, The wafer heating and cooling processing integrated cavity comprises: a cavity assembly forming a closed cavity (100); a support assembly arranged in the cavity (100) and comprising a support base (14), a lifting shaft (20) and a wafer support plate; the wafer support plate comprises a first support plate (10, 16) for carrying a first wafer (9) and a second support plate (12, 18) for carrying a second wafer (15); one end of the lifting shaft (20) is connected to the support base (14), and the other end is connected to a transmission mechanism to drive the support assembly to lift; a heating assembly (5) is mounted on the outside of the cavity (100) and is axially aligned with the first support plate (10, 16) and the second support plate (12, 18), and is used for radiation heating of the first wafer (9); a cooling disc (6) is arranged at the bottom of the cavity (100) and comprises a cooling table (61) and a connecting end (62), the cooling table (61) is located on the axially opposite side of the heating assembly (5), and the connecting end (62) extends to the outside of the cavity (100) and is connected to a cooling fluid circulating device through a cooling fluid connection port (7); a temperature monitoring unit comprises a first temperature sensor (22) arranged on the first support plate (10, 16) and used for monitoring the temperature of the first wafer (9); and a second temperature sensor (8) arranged on the cooling table (61) and used for monitoring the temperature of the second wafer (15); wherein when the lifting shaft (20) drives the support assembly to descend, the second wafer (15) on the second support plate (12, 18) abuts against the cooling table (61) for cooling, and at the same time the heating assembly (5) radiates heat to the first wafer (9); The control comprises the following steps: According to the mutual radiation influence relationship between the heating of the first wafer (9) and the cooling of the second wafer (15), the function relationship between the cooling fluid flow rate Q of the cooling disc (6) and the temperatures of the first wafer (9) and the second wafer (15) is calculated to obtain a cooling flow function; Based on the cooling flow function, the cooling fluid flow rate Q is adjusted and controlled in real time according to the temperature changes of the first wafer (9) and the second wafer (15) to control the cooling time of the second wafer (15) to be synchronized with the heating time of the first wafer (9).

2. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, The cavity assembly comprises a cavity (1), a cavity cover (2) mounted on the top of the cavity (1), a mounting plate (3) connected with the cavity cover (2), and a light-transmitting plate (4) connected with the mounting plate (3); the cavity (1), the cavity cover (2), the mounting plate (3), the light-transmitting plate (4) and the cooling disc (6) jointly form a closed cavity (100), and the heating assembly (5) is fixed on the outside of the mounting plate (3).

3. The wafer heating, cooling process integrated chamber control method of claim 2, wherein, The light-transmitting rate of the light-transmitting plate (4) to the radiation light of the heating assembly (5) is greater than 90%, so that the radiation light penetrates through the light-transmitting plate (4) to heat the wafer.

4. The wafer heating, cooling process integrated chamber control method of claim 3, wherein, The material of the light-transmitting plate (4) is any one of quartz, sapphire or transparent ceramic.

5. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, The material of the wafer support plate is any one of glass, sapphire or transparent ceramic.

6. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, The connecting end (62) of the cooling disc (6) is provided with a cooling fluid inlet (71) and a cooling fluid outlet (72), which respectively communicate with the cooling fluid circulation device to form a closed loop flow path.

7. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, When the second wafer (15) abuts against the cooling platform (61), the second temperature sensor (8) directly contacts the surface of the second wafer (15).

8. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, The wafer heating and cooling processing integrated cavity supports four working modes: Double-wafer mode: simultaneously heating the first wafer (9) and cooling the second wafer (15); Single-wafer heating mode: separately heating the first wafer (9) or the second wafer (15); Single-wafer cooling mode: separately cooling the second wafer (15); Single-wafer sequential mode: first heating and then cooling the second wafer (15).

9. The wafer heating, cooling process integrated chamber control method of claim 1, wherein, The calculation steps of the cooling flow function include: According to the temperature changes of the first wafer (9) and the second wafer (15) during the start of the heating process of the first wafer (9), the relationship between the second wafer temperature B and the first wafer temperature A, the first temperature sensor temperature TA is obtained: B = g(A) = g[f(TA)]; According to the temperature changes of the second wafer (15) and the first wafer (9) to be cooled under the state of the non-started cooling disc (6), the relationship between the second wafer temperature BB and the first wafer temperature AA, the first temperature sensor temperature TAA is obtained: BB = g[f(TAA)] + k2(AA-BB); According to the heating time required by the process and the cooling time of the second wafer (15), the relationship between the cooling fluid flow Q and the second wafer temperature BB is obtained: Q = m(BB); Simultaneously starting the heating assembly and the cooling disc (6), according to the changes of the first wafer temperature AAA and the second wafer temperature BBB, the function relationship between the first wafer temperature AAA and the first temperature sensor TAAA is corrected: AAA = f(TAAA) + k1(AAA-BBB) + n1(BB0-BBB), and the function relationship between the second wafer temperature BBB and the first wafer temperature AAA, the first temperature sensor TAAA is corrected: BBB = g[f(TAAA)] + k2(AAA-BBB) + n2(BB0-BBB), wherein BB0 is the initial temperature of the second wafer (15) to be cooled; The function relationship between the cooling fluid flow Q and the first temperature sensor TAAA, the first wafer temperature AAA, and the second wafer temperature BBB is corrected to obtain the cooling flow function: ， Wherein, g, f, k1, k2, m, n1 and n2 are correction coefficients.

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