Method for optimizing electrical performance of ZnO resistor disc based on square wave impact treatment

Abstract

The invention discloses a method for optimizing the electrical performance of a ZnO resistor disc based on square wave impact treatment. The method comprises the following steps: testing the electrical performance of the ZnO resistor disc to be optimized; calculating the single impact energy of the ZnO resistor disc and the charging voltage of the impact generator according to the volume energy density and the volume of the ZnO resistor disc; performing energy impact performance optimization of a preset impact group number on the ZnO resistor disc according to the charging voltage of the impact generator, and testing a forward volt-ampere curve and a reverse volt-ampere curve of the ZnO resistor disc; according to the forward volt-ampere curve and the reverse volt-ampere curve, respectively calculating forward electrical performance and reverse electrical performance of the ZnO resistor disc under energy impact; if the positive-sequence electrical performance, the reverse-direction electrical performance and the electrical performance meet preset conditions, optimization of the ZnO resistor disc is ended, otherwise, the preset impact group number is reduced, energy impact optimization processing is conducted again till the preset conditions are met, and the optimized ZnO resistor disc is obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of improving the electrical performance of resistors, and more particularly to a method for optimizing the electrical performance of ZnO resistors based on square wave impact processing. Background Art

[0002] As the core functional component of the metal oxide lightning arrester, the electrical performance of the ZnO resistor in the low current working area is mainly determined by key parameters such as breakdown field strength, nonlinear coefficient and leakage current density. At present, the relevant technical fields at home and abroad generally adopt means such as adjusting the formula and improving the sintering process to improve the above performance indicators. However, in actual application, the existing technology has found that although the electrical performance of the ZnO resistor can be improved to a certain extent by the above method, when the sintered resistor is treated under the action of energy impact, its performance still has room for further optimization. Specifically, energy impact treatment can enhance the uniformity and stability of the grain boundary barrier by dynamically regulating the distribution of intrinsic point defects and the filling of interface defect states, thereby significantly improving the breakdown field strength and nonlinear coefficient, while effectively reducing the leakage current density. Based on this technical background, the present invention proposes a new post-processing process combined with energy impact treatment, which aims to achieve precise control of the material microstructure through the synergistic effect of multiple physical fields, break through the performance bottleneck of the existing technology, and provide an innovative solution for the development of high-performance ZnO resistors to meet the urgent needs of the power system for high-reliability lightning arresters. Summary of the Invention

[0003] In view of the shortcomings of the prior art, the present invention provides a method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment.

[0004] According to one aspect of the present invention, a method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment is provided, comprising:

[0005] The electrical properties of the ZnO resistor to be optimized were tested at room temperature;

[0006] Calculate the single impact energy of the ZnO resistor according to its volume energy density and volume, and calculate the charging voltage of the impact generator for the single impact energy;

[0007] According to the charging voltage of the impact generator, the energy impact performance of the ZnO resistor is optimized by performing a preset number of impact groups, and the forward volt-ampere curve and reverse volt-ampere curve of the ZnO resistor are tested;

[0008] According to the forward volt-ampere curve and the reverse volt-ampere curve, the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact are calculated respectively;

[0009] If the positive sequence electrical performance, reverse electrical performance and electrical performance meet the preset conditions, the optimization of the ZnO resistor is terminated. Otherwise, the preset number of impact groups is reduced and the energy impact optimization process is repeated until the preset conditions are met to obtain the optimized ZnO resistor.

[0010] Optionally, the electrical properties of the ZnO resistor to be optimized are tested at room temperature, including:

[0011] At room temperature, the volt-ampere curve of the ZnO resistor to be optimized was tested;

[0012] The electrical properties of the ZnO resistor are calculated based on the volt-ampere curve, including the breakdown field strength and leakage current density.

[0013] Optionally, the electrical properties of the ZnO resistor are calculated based on the volt-ampere curve, including:

[0014] Determine the breakdown field strength of the ZnO resistor based on the electric field strength corresponding to the preset current density in the volt-ampere curve;

[0015] The leakage current density of the ZnO resistor is determined based on the current density corresponding to the preset multiple breakdown field strength in the volt-ampere curve.

[0016] Optionally, the preset multiple is 0.75.

[0017] Optionally, calculating the charging voltage of the impact generator for a single impact energy includes:

[0018] Keeping the room temperature, the impulse generator charging voltage of U is applied to the ZnO resistor. a The square wave impulse current is used to obtain the first impulse energy W a ;

[0019] The impulse generator charging voltage U is applied to the same ZnO resistor. b The square wave impulse current is used to obtain the second impulse energy W b ;

[0020] According to the first impact energy W a and the second impact energy W b , calculate the charging voltage U of the impact generator for a single impact energy q =|(U b -U a ) / (W b -W a )|*W q , where W q The energy of a single impact.

[0021] Optionally, the process of energy impact performance optimization is:

[0022] The ZnO resistors are subjected to energy shocks alternately in the forward and reverse directions. Each group is subjected to a preset number of energy shocks, and the n+1th group of shocks must be carried out after the resistors have cooled to room temperature after the nth group of shocks.

[0023] Optionally, the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact are calculated based on the forward volt-ampere curve and the reverse volt-ampere curve, respectively, including:

[0024] Calculate the forward breakdown field strength and forward leakage current of the ZnO resistor based on the forward volt-ampere curve;

[0025] The reverse breakdown field strength and reverse leakage current of the ZnO resistor are calculated based on the reverse voltammetry curve.

[0026] Optionally, the precondition is:

[0027] E B(n正) >E B(0) , E B(n反) >E B(0) And J L(n正) <J L(0) , J L(n反) <J L(0)

[0028] Where, E B(n正) is the forward breakdown field strength; E B(n反) is the reverse breakdown field strength; E B(0) is the breakdown field strength; J L(n正) is the forward leakage current; J L(n反) is the reverse leakage current; J L(0) is the leakage current.

[0029] According to another aspect of the present invention, a device for optimizing the electrical performance of a ZnO resistor based on square wave impulse processing is provided, comprising:

[0030] A test module is used to test the electrical properties of the ZnO resistor to be optimized at room temperature;

[0031] A first calculation module is used to calculate the single impact energy of the ZnO resistor according to the volume energy density and volume of the ZnO resistor, and calculate the charging voltage of the impact generator for the single impact energy;

[0032] An optimization module is used to optimize the energy impact performance of the ZnO resistor by performing a preset number of impact groups according to the charging voltage of the impact generator, and to test the forward volt-ampere curve and reverse volt-ampere curve of the ZnO resistor;

[0033] The second calculation module is used to calculate the forward electrical performance and reverse electrical performance of the ZnO resistor under energy impact according to the forward volt-ampere curve and the reverse volt-ampere curve respectively;

[0034] The judgment module is used to end the optimization of the ZnO resistor if the positive sequence electrical performance, reverse electrical performance and electrical performance meet the preset conditions; otherwise, the preset number of impact groups is reduced and the energy impact optimization process is repeated until the preset conditions are met to obtain the optimized ZnO resistor.

[0035] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the storage medium stores a computer program, and the computer program is used to execute the method according to any one of the above aspects of the present invention.

[0036] According to another aspect of the present invention, an electronic device is provided, comprising: a processor; a memory for storing instructions executable by the processor; and the processor for reading the executable instructions from the memory and executing the instructions to implement the method described in any one of the above aspects of the present invention.

[0037] The energy impact treatment process proposed in this invention significantly improves the electrical performance of ZnO resistors, specifically by increasing the breakdown field strength and effectively reducing the leakage current density. Compared to traditional formulation optimization and sintering process improvements, this invention provides a new technical approach that can further optimize the performance of resistors based on existing processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] A more complete understanding of exemplary embodiments of the present invention may be obtained by referring to the following drawings:

[0039] Figure 1 1 is a flow chart of a method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment provided by an exemplary embodiment of the present invention;

[0040] Figure 2 1 is another flow chart of a method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment provided by an exemplary embodiment of the present invention;

[0041] Figure 3 Schematic diagram of the volt-ampere curves of a ZnO resistor before and after energy impact optimization treatment provided by an exemplary embodiment of the present invention;

[0042] Figure 4 1 is a schematic structural diagram of a ZnO resistor electrical performance optimization device based on square wave shock treatment provided by an exemplary embodiment of the present invention;

[0043] Figure 5This is a structure of an electronic device provided by an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0044] Below, the exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments of the present invention, and it should be understood that the present invention is not limited to the exemplary embodiments described herein.

[0045] It should be noted that the relative arrangement of components and steps, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0046] Those skilled in the art will understand that the terms "first" and "second" in the embodiments of the present invention are only used to distinguish different steps, devices or modules, and neither represent any specific technical meaning nor indicate the necessary logical order between them.

[0047] It should also be understood that, in the embodiments of the present invention, “a plurality of” may refer to two or more than two, and “at least one” may refer to one, two or more than two.

[0048] It should also be understood that any component, data or structure mentioned in the embodiments of the present invention can generally be understood as one or more, unless explicitly limited or otherwise indicated in the context.

[0049] In addition, the term "and / or" in this invention merely describes an association relationship between related objects, indicating that three possible relationships exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Furthermore, the character " / " in this invention generally indicates that the related objects are in an "or" relationship.

[0050] It should also be understood that the description of the various embodiments of the present invention focuses on the differences between the various embodiments, and the same or similar aspects thereof can be referenced with each other. For the sake of brevity, they will not be described one by one.

[0051] At the same time, it should be understood that for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.

[0052] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0053] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, they should be considered part of the specification.

[0054] It should be noted that like reference numerals and letters refer to like items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0055] Embodiments of the present invention can be applied to electronic devices such as terminal devices, computer systems, and servers, and can operate in conjunction with numerous other general-purpose or specialized computing system environments or configurations. Examples of well-known terminal devices, computing systems, environments, and / or configurations suitable for use with terminal devices, computer systems, servers, and other electronic devices include, but are not limited to, personal computer systems, server computer systems, thin clients, thick clients, handheld or laptop devices, microprocessor-based systems, set-top boxes, programmable consumer electronics, network personal computers, minicomputer systems, mainframe computer systems, and distributed cloud computing technology environments including any of the above.

[0056] Electronic devices such as terminal devices, computer systems, and servers can be described in the general context of computer system-executable instructions (such as program modules) executed by a computer system. Generally, program modules can include routines, programs, object programs, components, logic, data structures, etc., which perform specific tasks or implement specific abstract data types. Computer systems / servers can be implemented in a distributed cloud computing environment, where tasks are performed by remote processing devices linked via a communication network. In a distributed cloud computing environment, program modules can be located on local or remote computing system storage media, including storage devices.

[0057] Exemplary Methods

[0058] Figure 1 FIG. 1 is a flow chart of a method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment provided by an exemplary embodiment of the present invention. This embodiment can be applied to electronic devices, such as Figure 1 As shown, the method 100 for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment includes the following steps:

[0059] Step 101, testing the electrical properties of the ZnO resistor to be optimized at room temperature;

[0060] Step 102, calculating the single impact energy of the ZnO resistor according to the volume energy density and volume of the ZnO resistor, and calculating the charging voltage of the impact generator for the single impact energy;

[0061] Step 103, optimizing the energy impact performance of the ZnO resistor by performing a preset number of impact groups according to the charging voltage of the impact generator, and testing the forward volt-ampere curve and the reverse volt-ampere curve of the ZnO resistor;

[0062] Step 104, calculating the forward electrical performance and reverse electrical performance of the ZnO resistor under energy impact based on the forward volt-ampere curve and the reverse volt-ampere curve;

[0063] Step 105 , if the positive sequence electrical performance, the reverse electrical performance and the electrical performance meet the preset conditions, then the optimization of the ZnO resistor is terminated; otherwise, the preset number of impact groups is reduced and the energy impact optimization process is repeated until the preset conditions are met to obtain the optimized ZnO resistor.

[0064] Specifically, the present invention aims to provide a method for optimizing the electrical performance of ZnO resistors through energy impact treatment. This method overcomes the performance optimization bottlenecks of traditional formulations and sintering processes, addressing the existing problem of limited electrical performance improvement of ZnO resistors in the low-current range. This invention provides a new technical path for developing high-performance ZnO resistors, which can meet the power system's demand for high-reliability metal oxide surge arresters.

[0065] In view of the above problems, the present invention proposes a method for optimizing the electrical performance of ZnO resistors based on energy impact treatment. Figure 2 As shown, including:

[0066] It is stipulated that one side of the resistor is forward and the other side is reverse. At room temperature, a DC voltage is applied, and the current density-electric field strength curve (JE curve) of the ZnO resistor is tested and plotted to calculate the breakdown field strength E B(0) and leakage current density J L(0) , define E B(0) The horizontal coordinate (current density) of the (JE)0 curve is 1 mA / cm 2 The corresponding electric field strength, J L(0) 0.75E B(0) To distinguish the electrical parameters of ZnO resistors after energy shock treatment from those after energy shock treatment, all parameters are subscripted 0 when not treated.

[0067] According to CIGRE Technical Brochure (2017), the failure energy density of ZnO resistor is 400J / cm 3 And above. Combined with the application scenario and size, determine the volume energy density ρ of different resistors V Calculate the energy W corresponding to a single impact q , that is, W q =ρ V *V, where V is the volume of the corresponding ZnO resistor.

[0068] Get W q The corresponding impulse generator charging voltage U q:Maintain room temperature conditions, apply impulse generator charging voltage to the resistor with a value of U a The square wave impulse current is used to obtain the impulse energy W a , continue to apply the impulse generator charging voltage of U to the same resistor b The square wave impulse current is used to obtain the impulse energy W b By obtaining W a and W b Calculate the charging voltage U of the impulse generator q , where U q =|(U b -U a ) / (W b -W a )|*W q .

[0069] The impulse generator charging voltage applied to the resistor is U q The energy shock optimization process starts after a specified number of groups (2n groups can be selected, and the forward and reverse directions are alternated, each group receives three energy shocks, and the n+1 group shock must be carried out after the resistor cools down to room temperature after the nth group shock). The optimization is suspended. The forward and reverse JE curves of the ZnO resistor are tested at room temperature and recorded as (JE). n正 and (JE) n反 (n≥1), get E B(n正) 、E B(n反) and J L(n正) 、J L(n反) . Define E B(n正) Yes (JE) n正 The horizontal axis of the curve (current density) is 1mA / cm 2 The corresponding electric field strength, J L(n正) 0.75E B(n正) The corresponding current density; E B(n反) Yes (JE) n反 The horizontal axis of the curve (current density) is 1mA / cm 2 The corresponding electric field strength, J L(n反) 0.75E B(n反) The corresponding current density.

[0070] If E B(n正) Greater than E B(0) , E B(n反) Greater than E B(0) And J L(n正) Less than J L(0) , J L(n反) Less than J L(0), the ZnO resistor energy impact performance optimization process is completed, and the optimized ZnO resistor is obtained. If the condition is not met, the energy impact optimization process is repeated by reducing the number of impact groups.

[0071] In one embodiment of the present invention, a ZnO resistor to be subjected to energy impact optimization treatment is selected, a DC voltage is applied at room temperature to test the volt-ampere characteristics and a JE curve is drawn, as shown in FIG. Figure 3 n=0 curve. According to the volt-ampere curve, calculate the electrical parameter breakdown field strength E B(0) and leakage current density J L(0) , E B(0) The horizontal axis of the JE curve (current density) is 1mA / cm 2 The corresponding electric field strength, J L(0) 0.75E B(0) The corresponding current densities are listed in Table 1.

[0072] The volume of the selected ZnO resistor is 12.56 cm 3 , volume energy density is 200J / cm 3 , calculate the energy W required for the impact q = 200 * 12.56 = 2512 J. Keeping the room temperature, a square wave impulse current with a charging voltage of 3000 V is applied to the resistor to obtain the impulse energy W. a The impulse energy W is 2036J. The square wave impulse current with a charging voltage of 4000V is applied to the resistor. b is 2715 J. W is calculated q Corresponding charging voltage U q It is 3700V.

[0073] Set the charging voltage to 3700V, apply square wave impulse current to the resistor, start energy impulse optimization, and pause optimization after 10 sets of positive and negative alternating impulses. Test the forward and reverse volt-ampere characteristic curves of the ZnO resistor at room temperature. Figure 3 According to the volt-ampere curve, the forward breakdown field strength E of the ZnO resistor is calculated. B(5正) , reverse breakdown field strength E B(5反) and forward leakage current J L(5正) , reverse leakage current J L(5反) , listed in Table 1.

[0074] Table 1 Electrical parameters of ZnO resistors before and after energy impact optimization treatment

[0075]

[0076] As can be seen from Table 1, after 10 sets of positive and negative alternating energy impact optimization treatments, that is, when n=5, E B(5正) >E B(0) , E B(5反) >E B(0) And J L(5正) <J L(0) , J L(5反) <J L(0) Therefore, the optimized ZnO resistor is obtained.

[0077] The energy impact treatment process proposed in this invention significantly improves the electrical performance of ZnO resistors, specifically by increasing the breakdown field strength and effectively reducing the leakage current density. Compared to traditional formulation optimization and sintering process improvements, this invention provides a new technical approach that can further optimize the performance of resistors based on existing processes.

[0078] Exemplary devices

[0079] Figure 4 FIG. 1 is a schematic diagram of a ZnO resistor electrical performance optimization device based on square wave shock treatment provided by an exemplary embodiment of the present invention. Figure 4 As shown, the apparatus 400 includes:

[0080] A testing module 410 is used to test the electrical properties of the ZnO resistor to be optimized at room temperature;

[0081] A first calculation module 420 is configured to calculate a single impact energy of the ZnO resistor according to the volume energy density and volume of the ZnO resistor, and calculate a charging voltage of the impact generator corresponding to the single impact energy;

[0082] An optimization module 430 is configured to optimize the energy impact performance of the ZnO resistor by performing a preset number of impact groups according to the charging voltage of the impact generator, and to test the forward volt-ampere curve and the reverse volt-ampere curve of the ZnO resistor;

[0083] The second calculation module 440 is used to calculate the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact according to the forward volt-ampere curve and the reverse volt-ampere curve;

[0084] The judgment module 450 is used to terminate the optimization of the ZnO resistor if the positive sequence electrical performance, the reverse electrical performance and the electrical performance meet the preset conditions; otherwise, the preset number of impact groups is reduced and the energy impact optimization process is repeated until the preset conditions are met to obtain the optimized ZnO resistor.

[0085] Optionally, the testing module 410 includes:

[0086] The test submodule is used to test the volt-ampere curve of the ZnO resistor to be optimized at room temperature;

[0087] The first calculation submodule is used to calculate the electrical properties of the ZnO resistor according to the volt-ampere curve, where the electrical properties include breakdown field strength and leakage current density.

[0088] Optionally, the first calculation submodule includes:

[0089] A first determining unit is used to determine the breakdown field strength of the ZnO resistor according to the electric field strength corresponding to the preset current density in the volt-ampere curve;

[0090] The second determining unit is used to determine the leakage current density of the ZnO resistor according to the current density corresponding to the preset multiple breakdown field strength in the volt-ampere curve.

[0091] Optionally, the preset multiple is 0.75.

[0092] Optionally, the first calculation module 420 calculates the charging voltage of the impact generator of a single impact energy, including:

[0093] The first application submodule is used to maintain room temperature conditions and apply an impulse generator charging voltage of magnitude U to the ZnO resistor. a The square wave impulse current is used to obtain the first impulse energy W a ;

[0094] The second applying submodule is used to apply the impulse generator charging voltage of magnitude U to the same ZnO resistor. b The square wave impulse current is used to obtain the second impulse energy W b ;

[0095] The second calculation submodule is used to calculate the impact energy W according to the first impact energy W a and the second impact energy W b , calculate the charging voltage U of the impact generator for a single impact energy q =|(U b -U a ) / (W b -W a )|*W q , where W q The energy of a single impact.

[0096] Optionally, the process of optimizing the energy impact performance in the optimization module 430 is as follows:

[0097] The ZnO resistors are subjected to energy shocks alternately in the forward and reverse directions. Each group is subjected to a preset number of energy shocks, and the n+1th group of shocks must be carried out after the resistors have cooled to room temperature after the nth group of shocks.

[0098] Optionally, the second calculation module 440 includes:

[0099] The third calculation submodule is used to calculate the forward breakdown field strength and forward leakage current of the ZnO resistor according to the forward volt-ampere curve;

[0100] The fourth calculation submodule is used to calculate the reverse breakdown field strength and reverse leakage current of the ZnO resistor according to the reverse volt-ampere curve.

[0101] Optionally, the precondition is:

[0102] E B(n正) >E B(0) , E B(n反) >E B(0) And J L(n正) <J L(0) , J L(n反) <J L(0)

[0103] Where, E B(n正) is the forward breakdown field strength; E B(n反) is the reverse breakdown field strength; E B(0) is the breakdown field strength; J L(n正) is the forward leakage current; J L(n反) is the reverse leakage current; J L(0) is the leakage current.

[0104] Exemplary electronic devices

[0105] Figure 5 This is the structure of an electronic device provided by an exemplary embodiment of the present invention. Figure 5 As shown, the electronic device 50 includes one or more processors 51 and a memory 52 .

[0106] The processor 51 may be a central processing unit (CPU) or other forms of processing units having data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device to perform desired functions.

[0107] The memory 52 may include one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may include, for example, random access memory (RAM) and / or cache memory (cache), etc. The non-volatile memory may include, for example, read-only memory (ROM), a hard disk, a flash memory, etc. One or more computer program instructions may be stored on the computer-readable storage medium, and the processor 51 may execute the program instructions to implement the methods of the software programs of the various embodiments of the present invention described above and / or other desired functions. In one example, the electronic device may further include: an input device 53 and an output device 54, which are interconnected via a bus system and / or other forms of connection mechanisms (not shown).

[0108] In addition, the input device 53 may also include, for example, a keyboard, a mouse, and the like.

[0109] The output device 54 can output various information to the outside. The output device 54 can include, for example, a display, a speaker, a printer, a communication network and a remote output device connected thereto.

[0110] Of course, to simplify, Figure 5 Only some of the components related to the present invention in the electronic device are shown, and components such as a bus, an input / output interface, etc. are omitted. In addition, the electronic device may further include any other appropriate components according to specific application conditions.

[0111] Exemplary computer program products and computer-readable storage media

[0112] In addition to the above-mentioned methods and devices, an embodiment of the present invention may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to perform the steps of the method according to various embodiments of the present invention described in the above "Exemplary Method" section of this specification.

[0113] The computer program product may be written in any combination of one or more programming languages ​​to implement the operations of embodiments of the present invention, including object-oriented programming languages ​​such as Java, C++, and conventional procedural programming languages ​​such as C or similar programming languages. The program code may be executed entirely on the user's computing device, partially on the user's computing device, as a stand-alone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0114] In addition, an embodiment of the present invention may also be a computer-readable storage medium having computer program instructions stored thereon, which, when executed by a processor, enable the processor to execute the steps of the method according to various embodiments of the present invention described in the above "Exemplary Method" section of this specification.

[0115] The computer-readable storage medium can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can, for example, include but is not limited to a system, system or device of electricity, magnetism, light, electromagnetic, infrared, or semiconductor, or any combination thereof. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.

[0116] The basic principles of the present invention have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, and effects mentioned in the present invention are merely illustrative and non-limiting, and should not be construed as necessarily possessed by each embodiment of the present invention. Furthermore, the specific details disclosed above are provided for illustrative purposes and to facilitate understanding, and are not intended to be limiting. These details do not necessarily limit the present invention to being implemented using these specific details.

[0117] Each embodiment in this specification is described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. References to the same or similar parts between the various embodiments are sufficient. For system embodiments, since they largely correspond to method embodiments, their description is relatively simple. For relevant parts, references to the description of the method embodiments are sufficient.

[0118] The block diagrams of the devices, systems, equipment, and systems involved in the present invention are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As will be appreciated by those skilled in the art, these devices, systems, equipment, and systems can be connected, arranged, or configured in any manner. Words such as "including," "comprising," "having," and the like are open-ended words, meaning "including but not limited to," and can be used interchangeably therewith. The words "or" and "and" used herein refer to the words "and / or" and can be used interchangeably therewith, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to," and can be used interchangeably therewith.

[0119] The method and system of the present invention may be implemented in many ways. For example, the method and system of the present invention may be implemented by software, hardware, firmware, or any combination of software, hardware, and firmware. The above sequence of steps for the method is for illustration only, and the steps of the method of the present invention are not limited to the sequence specifically described above, unless otherwise specified. In addition, in some embodiments, the present invention may also be implemented as a program recorded in a recording medium, which includes machine-readable instructions for implementing the method according to the present invention. Thus, the present invention also covers recording media that store programs for executing the method according to the present invention.

[0120] It should also be noted that, in the system, device and method of the present invention, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent schemes of the present invention. The above description of the disclosed aspects is provided to enable any technician in this field to make or use the present invention. Various modifications to these aspects will be very obvious to those skilled in the art, and the general principles defined here can be applied to other aspects without departing from the scope of the present invention. Therefore, the present invention is not intended to be limited to the aspects shown here, but according to the widest scope consistent with the principles disclosed here and novel features.

[0121] The above description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present invention to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A method for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment, characterized in that: include: The electrical properties of the ZnO resistor to be optimized were tested at room temperature; Calculating the single impact energy of the ZnO resistor according to the volume energy density and volume of the ZnO resistor, and calculating the charging voltage of the impact generator for the single impact energy; Optimize the energy impact performance of the ZnO resistor by performing a preset number of impact groups according to the charging voltage of the impact generator, and test the forward volt-ampere curve and reverse volt-ampere curve of the ZnO resistor; Calculating the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact according to the forward volt-ampere curve and the reverse volt-ampere curve; If the positive sequence electrical performance, the reverse electrical performance and the electrical performance meet the preset conditions, the optimization of the ZnO resistor is terminated; otherwise, the preset number of impact groups is reduced and the energy impact optimization process is performed again until the preset conditions are met to obtain the optimized ZnO resistor.

2. The method according to claim 1, characterized in that The electrical properties of the ZnO resistor to be optimized were tested at room temperature, including: At room temperature, the volt-ampere curve of the ZnO resistor to be optimized was tested; The electrical properties of the ZnO resistor are calculated according to the volt-ampere curve, where the electrical properties include breakdown field strength and leakage current density.

3. The method according to claim 2, characterized in that Calculating the electrical performance of the ZnO resistor according to the volt-ampere curve includes: Determining the breakdown field strength of the ZnO resistor according to the electric field strength corresponding to the preset current density in the volt-ampere curve; The leakage current density of the ZnO resistor is determined according to the current density corresponding to the preset multiple breakdown field strength in the volt-ampere curve.

4. The method according to claim 3, characterized in that The preset multiple is 0.

75.

5. The method according to claim 1, wherein Calculating the charging voltage of the impact generator of the single impact energy includes: Keeping the room temperature, the ZnO resistor is charged with a surge generator with a voltage of U a The square wave impulse current is used to obtain the first impulse energy W a ; The same ZnO resistor is applied with a charging voltage of U b The square wave impulse current is used to obtain the second impulse energy W b ; According to the first impact energy W a And the second impact energy W b , calculate the charging voltage U of the impact generator of the single impact energy q =|(U b -U a ) / (W b -W a )|*W q , where W q The energy of a single impact.

6. The method according to claim 1, wherein The process of optimizing the energy impact performance is as follows: The ZnO resistors are subjected to energy shocks alternately in forward and reverse directions, with each group receiving a preset number of energy shocks, and the n+1th group of shocks must be carried out after the resistors have cooled to room temperature after the nth group of shocks.

7. The method according to claim 1, characterized in that Calculating the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact according to the forward volt-ampere curve and the reverse volt-ampere curve, respectively, includes: Calculating the forward breakdown field strength and forward leakage current of the ZnO resistor according to the forward volt-ampere curve; The reverse breakdown field strength and reverse leakage current of the ZnO resistor are calculated according to the reverse volt-ampere curve.

8. The method according to claim 7, characterized in that The preset conditions are: E B(n正 )>E B(0) , E B(n反 )>E B(0) And J L(n正 )<J L(0) , J L(n反 )<J L(0) Where, E B(n正) is the forward breakdown field strength; E B(n反) is the reverse breakdown field strength; E B(0) is the breakdown field strength; J L(n正) is the forward leakage current; J L(n反) is the reverse leakage current; J L(0) is the leakage current.

9. A device for optimizing the electrical performance of a ZnO resistor based on square wave shock treatment, characterized in that: include: A test module is used to test the electrical properties of the ZnO resistor to be optimized at room temperature; a first calculation module, configured to calculate a single impact energy of the ZnO resistor according to the volume energy density and volume of the ZnO resistor, and calculate a charging voltage of an impact generator corresponding to the single impact energy; An optimization module, configured to optimize the energy impact performance of the ZnO resistor by performing a preset number of impact groups according to the charging voltage of the impact generator, and to test a forward volt-ampere curve and a reverse volt-ampere curve of the ZnO resistor; A second calculation module is used to calculate the forward electrical performance and the reverse electrical performance of the ZnO resistor under energy impact according to the forward volt-ampere curve and the reverse volt-ampere curve; A judgment module is used to terminate the optimization of the ZnO resistor if the positive-sequence electrical performance, the reverse electrical performance, and the electrical performance meet preset conditions; otherwise, the preset number of impact groups is reduced and the energy impact optimization process is performed again until the preset conditions are met to obtain an optimized ZnO resistor.

10. The device according to claim 9, characterized in that Test modules, including: The test submodule is used to test the volt-ampere curve of the ZnO resistor to be optimized at room temperature; The first calculation submodule is configured to calculate the electrical properties of the ZnO resistor according to the volt-ampere curve, where the electrical properties include breakdown field strength and leakage current density.

11. The device according to claim 10, characterized in that The first computing submodule includes: a first determining unit, configured to determine the breakdown field strength of the ZnO resistor according to an electric field strength corresponding to a preset current density in the volt-ampere curve; The second determining unit is configured to determine the leakage current density of the ZnO resistor according to the current density corresponding to the preset multiple breakdown field strength in the volt-ampere curve.

12. The device according to claim 11, characterized in that The preset multiple is 0.

75.

13. The device according to claim 9, characterized in that The first calculation module calculates the charging voltage of the impact generator of the single impact energy, including: The first application submodule is used to maintain room temperature and apply a surge generator charging voltage of U to the ZnO resistor. a The square wave impulse current is used to obtain the first impulse energy W a ; The second applying submodule is used to apply a surge generator charging voltage of magnitude U to the same ZnO resistor. b The square wave impulse current is used to obtain the second impulse energy W b ; The second calculation submodule is used to calculate the impact energy W a And the second impact energy W b , calculate the charging voltage U of the impact generator of the single impact energy q =|(U b -U a ) / (W b -W a )|*W q , where W q The energy of a single impact.

14. The device according to claim 9, characterized in that The process of optimizing the energy impact performance in the optimization module is as follows: The ZnO resistors are subjected to energy shocks alternately in forward and reverse directions, with each group receiving a preset number of energy shocks, and the n+1th group of shocks must be carried out after the resistors have cooled to room temperature after the nth group of shocks.

15. The device according to claim 9, characterized in that The second computing module includes: A third calculation submodule is used to calculate the forward breakdown field strength and forward leakage current of the ZnO resistor according to the forward volt-ampere curve; The fourth calculation submodule is configured to calculate the reverse breakdown field strength and reverse leakage current of the ZnO resistor according to the reverse volt-ampere curve.

16. The method according to claim 15, characterized in that The preset conditions are: E B(n正 )>E B(0) , E B(n反 )>E B(0) And J L(n正 )<J L(0) , J L(n反 )<J L(0) Where, E B(n正) is the forward breakdown field strength; E B(n反) is the reverse breakdown field strength; E B(0) is the breakdown field strength; J L(n正) is the forward leakage current; J L(n反) is the reverse leakage current; J L(0) is the leakage current.

17. A computer-readable storage medium, characterized in that The storage medium stores a computer program, and the computer program is used to execute the method according to any one of claims 1 to 8.

18. An electronic device, characterized in that: The electronic device comprises: processor; a memory for storing instructions executable by the processor; The processor is configured to read the executable instructions from the memory and execute the instructions to implement the method according to any one of claims 1 to 8.

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