Processing liquid release nozzle, nozzle arm, substrate processing apparatus, and substrate processing method

Abstract

The invention provides a processing liquid release nozzle, a nozzle arm, a substrate processing apparatus, and a substrate processing method. A processing liquid release nozzle according to an embodiment is a processing liquid release nozzle that releases a processing liquid for substrate processing. The processing liquid release nozzle includes a nozzle body portion and an angle changing mechanism. The nozzle main body includes: a first main body in which a first flow path communicating with the processing liquid supply passage is formed; and a second main body part in which a second flow path communicating with the first flow path is formed and which is bent relative to the first main body part. The angle changing mechanism changes the angle of the nozzle body in the horizontal direction with respect to a fixing member that fixes the nozzle body. The present invention can suppress the generation of particles.

Description

[0001] This case is a divisional application of the application entitled "Processing liquid release nozzle, nozzle arm, substrate processing device and substrate processing method" with application date of July 14, 2020 and application number 202010673489.4. Technical Field

[0002] The present invention relates to a processing liquid releasing nozzle, a nozzle arm, a substrate processing device and a substrate processing method. Background Art

[0003] Patent Document 1 discloses a technique for releasing a processing liquid from a processing liquid nozzle toward a substrate.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-40958 Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a technology for suppressing the generation of particles.

[0009] Technical solutions to technical problems

[0010] A treatment liquid release nozzle according to one embodiment of the present invention is a treatment liquid release nozzle for releasing treatment liquid for substrate processing. The treatment liquid release nozzle includes a nozzle body and an angle adjustment mechanism. The nozzle body includes a first body portion defining a first flow path communicating with a treatment liquid supply passage; and a second body portion defining a second flow path communicating with the first flow path and curved relative to the first body portion. The angle adjustment mechanism adjusts the horizontal angle of the nozzle body portion relative to a fixed member that secures the nozzle body portion.

[0011] Effects of the Invention

[0012] According to the present invention, the generation of particles can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic diagram showing the structure of the substrate processing apparatus according to the first embodiment.

[0014] Figure 2 It is a perspective view of the processing liquid supply unit according to the first embodiment.

[0015] Figure 3 It is a top view of the processing liquid supply unit according to the first embodiment.

[0016] Figure 4 yes Figure 3IV-IV sectional view of FIG.

[0017] Figure 5 It is a front view of the processing liquid discharge nozzle according to the first embodiment.

[0018] Figure 6 It is a top view of the processing liquid discharge nozzle according to the first embodiment.

[0019] Figure 7 yes Figure 6 VII-VII sectional view.

[0020] Figure 8 This is a flowchart illustrating the release angle changing process according to the first embodiment.

[0021] Figure 9 It is a top view of the processing liquid supply unit according to the second embodiment.

[0022] Figure 10 It is a top view of the processing liquid discharge nozzle of the second embodiment.

[0023] Figure 11 yes Figure 10 XI-XI sectional view.

[0024] Figure 12 This is a perspective view of the processing liquid release nozzle according to the second embodiment as viewed obliquely from below.

[0025] Figure 13 yes Figure 9 Sectional view XIII-XIII.

[0026] Figure 14 It is a top view of the processing liquid supply unit according to the third embodiment.

[0027] Figure 15 It is a schematic diagram illustrating the arrangement of the processing liquid release nozzle and the gas release nozzle according to the third embodiment.

[0028] Figure 16 It is a perspective view showing a portion of a substrate processing apparatus according to a fourth embodiment.

[0029] Figure 17 This is a schematic diagram showing a state in which the processing liquid discharge nozzle is at a standby position in the substrate processing apparatus according to the fourth embodiment.

[0030] Figure 18 This is a schematic diagram showing a state in which the processing liquid discharge nozzle is at the discharge position in the substrate processing apparatus according to the fourth embodiment.

[0031] Figure 19 This is a schematic diagram showing a state in which the first conductive portion is at a non-contact position in the substrate processing apparatus according to the fifth embodiment.

[0032] Figure 20 This is a schematic diagram showing a state in which the first conductive portion is at a contact position in the substrate processing apparatus according to the fifth embodiment.

[0033] Figure 21 It is a perspective view showing a portion of a substrate processing apparatus according to a sixth embodiment.

[0034] Figure 22 It is a perspective view showing a portion of a substrate processing apparatus according to a seventh embodiment.

[0035] Figure 23 It is a cross-sectional view showing a part of an arm according to a modified example.

[0036] Description of Reference Numerals

[0037] 1Substrate processing device

[0038] 2 Processing container

[0039] 3. Holding unit (an example of a substrate rotating unit)

[0040] 4. Outer cup body (one example of the cup body)

[0041] 5 arms (an example of a nozzle arm)

[0042] 6 Control device

[0043] 6b Control Unit

[0044] 10, 100 arms

[0045] 11 Moving mechanism (an example of a rotating mechanism)

[0046] 12, 50, 70 treatment liquid supply unit

[0047] 20, 51 nozzle mounting block (an example of a fixing component)

[0048] 21, 52, 80 treatment fluid release nozzles

[0049] 30, 53 nozzle body

[0050] 31 Nozzle release

[0051] 31b Release flow path

[0052] 31c inner wall surface

[0053] 31e inner wall

[0054] 32, 54 connecting part (an example of an angle changing mechanism)

[0055] 35, 55, 82 1st main body

[0056] 35a 1st flow path

[0057] 36 2nd main body

[0058] 36a 2nd flow path

[0059] 36c inner wall surface

[0060] 60 Position alignment unit

[0061] 71 Gas Release Nozzle

[0062] 90, 95 1st conductive part

[0063] 91, 96 Second conductive part

[0064] 91b, 96b deformation part

[0065] 100a contact part

[0066] 101 Ion Generator

[0067] W substrate. DETAILED DESCRIPTION

[0068] Hereinafter, embodiments of the treatment liquid release nozzle, nozzle arm, substrate processing apparatus, and substrate processing method disclosed in the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the treatment liquid release nozzle, nozzle arm, substrate processing apparatus, and substrate processing method disclosed in the embodiments shown below are not limited thereto.

[0069] In the drawings referenced below, to facilitate understanding, an orthogonal coordinate system is sometimes shown, defining mutually orthogonal X-axis, Y-axis, and Z-axis directions, with the positive Z-axis direction being the vertically upward direction. The X-axis and Y-axis directions are horizontal. Below, the positive Z-axis direction is sometimes used as the upward direction, and the negative Z-axis direction is sometimes used as the downward direction.

[0070] (First embodiment)

[0071] <Overall Structure of Substrate Processing Apparatus>

[0072] Reference Figure 1 , the structure of the substrate processing apparatus 1 according to the first embodiment will be described. Figure 1 It is a schematic diagram showing the structure of the substrate processing apparatus 1 according to the first embodiment.

[0073] The substrate processing apparatus 1 includes a processing container 2, a holder 3, an outer cup 4, an arm 5, and a control device 6. The processing container 2 houses the holder 3, the outer cup 4, and the arm 5. The processing container 2 houses a processing liquid discharge nozzle 21 and a moving mechanism 11 of the arm 5 described later.

[0074] The holding unit 3 holds the placed circular substrate W. The holding unit 3 holds the substrate W while performing substrate processing. For example, the holding unit 3 holds the lower surface of the wafer W by suction using a vacuum chuck. Furthermore, the holding unit 3 (an example of a substrate rotating unit) rotates the placed substrate W. Specifically, the holding unit 3 rotates about an axis along the Z-axis, thereby rotating the held substrate W.

[0075] In addition, the holding portion 3 is raised and lowered in the Z-axis direction. The holding portion 3 is raised and lowered, for example, while holding the substrate W. The holding portion 3 raises and lowers the substrate W between the handover position and the processing position. The handover position is set at a position above the outer cup 4, and is a position where the substrate W is handed over between the holding portion 3 and the substrate conveying device (not shown). The processing position is set at a position below the handover position, is a position inside the outer cup 4, and is a position where substrate processing is performed on the substrate W.

[0076] The outer cup 4 (an example of a cup portion) is provided so as to surround the holding portion 3 and the outer side of the substrate W held by the holding portion 3. The outer cup 4 is provided in a ring shape.

[0077] The outer cup 4 receives the processing liquid scattered from the substrate W. The outer cup 4 is formed of a material with high chemical resistance. A drain port (not shown) is provided at the bottom of the outer cup 4. The processing liquid received by the outer cup 4 is discharged to the outside of the processing container 2 through the drain port.

[0078] The treatment liquid is, for example, a chemical solution or a rinse solution. Examples of chemical solutions include hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), and fluoronitric acid. Fluoronitric acid is a mixture of hydrofluoric acid (HF) and nitric acid (HNO3). An example of a rinse solution is deionized water (DIW).

[0079] A pair of arms 5 are arranged side by side along the X-axis. Specifically, the arms 5 are positioned on either side of the substrate W in the X-axis direction. Hereinafter, the arm 5 on the negative X-axis side of the pair of arms 5 will sometimes be referred to as the left arm 5L, and the arm 5 on the positive X-axis side will sometimes be referred to as the right arm 5R. The arms 5 include an arm portion 10, a moving mechanism 11, and a processing liquid supply portion 12. Alternatively, a single arm 5 may be provided.

[0080] The arm portion 10 extends from the base end in the Z-axis direction and extends from the upper end in the horizontal direction. The arm portion 10 is provided in an L-shape.

[0081] The moving mechanism 11 (an example of a rotation mechanism) rotates the arm 10. Specifically, the moving mechanism 11 rotates the arm 10 about the axis of the arm 10 extending in the Z-axis direction. Furthermore, the moving mechanism 11 moves the arm 10 in the X-axis direction and the Z-axis direction. Multiple moving mechanisms 11 may be provided. For example, the moving mechanism 11 may include a moving mechanism that rotates the arm 10 about the axis in the Z-axis direction, a moving mechanism that moves the arm 10 in the X-axis direction, and a moving mechanism that moves the arm 10 in the Z-axis direction.

[0082] The processing liquid supply unit 12 supplies processing liquid to the upper surface of the substrate W. The processing liquid supply unit 12 releases the processing liquid toward the periphery of the upper surface of the substrate W, thereby etching the periphery of the substrate W. The processing liquid supply unit 12 is provided at the front end of the arm unit 10. Details of the processing liquid supply unit 12 will be described later.

[0083] The periphery is a region having a width of, for example, about 1 to 5 mm from the end surface of the circular substrate W and including the radially inner side of the substrate W. The periphery is an annular region.

[0084] In addition, the substrate processing apparatus 1 may also include a lower surface supply unit (not shown) for supplying processing liquid to the periphery of the lower surface of the substrate W, a heating mechanism (not shown) for supplying heated fluid to the lower surface of the substrate W, etc.

[0085] The control device 6 is, for example, a computer, and includes a storage unit 6a and a control unit 6b.

[0086] The storage unit 6 a is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores programs for controlling various processes executed in the substrate processing apparatus 1 .

[0087] The control unit 6b includes a microcomputer and various circuits including a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The control unit 6b controls the operation of the substrate processing apparatus 1 by reading and executing programs stored in the storage unit 6a.

[0088] Alternatively, the program may be stored in a computer-readable storage medium and installed from the storage medium into the storage unit 6a of the control device 6. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0089] <Processing Liquid Supply Section>

[0090] Next, refer to Figure 2 and Figure 3 , the processing liquid supply unit 12 will be described. Figure 2 It is a perspective view of the processing liquid supply unit 12 according to the first embodiment. Figure 3 1 is a top view of the processing liquid supply unit 12 of the first embodiment. Figure 2 and Figure 3 The processing liquid supply unit 12 is the processing liquid supply unit 12 provided in the right arm 5R.

[0091] The treatment liquid supply unit 12 includes a nozzle mounting block 20 and a treatment liquid release nozzle 21. The nozzle mounting block 20 is mounted on the front end of the arm 10. That is, the nozzle mounting block 20 (an example of a fixed component) is mounted on the arm 10. The treatment liquid supply pipe 5a provided on the arm 5 is connected to the nozzle mounting block 20. Figure 4 As shown, a treatment liquid supply passage 20a is formed in the nozzle mounting block 20. The treatment liquid supplied from the treatment liquid supply pipe 5a flows through the treatment liquid supply passage 20a. Figure 4 yes Figure 3 IV-IV sectional view of FIG.

[0092] The nozzle mounting block 20 is formed with a first recess 20b, a second recess 20c, and a third recess 20d. The first recess 20b is formed so as to be recessed downward from the upper surface of the nozzle mounting block 20. A through-hole 20e is formed at the bottom of the first recess 20b. The screw 22 that secures the treatment liquid release nozzle 21 to the nozzle mounting block 20 can be inserted into the through-hole 20e.

[0093] like Figure 3 As shown, a plurality of through-holes 20e are provided for one treatment liquid release nozzle 21. For example, two through-holes 20e are provided for one treatment liquid release nozzle 21. Furthermore, the number of through-holes 20e for one treatment liquid release nozzle 21 is not limited to two. For example, the number of through-holes 20e for one treatment liquid release nozzle 21 may be three or more.

[0094] like Figure 4 As shown, the second recess 20c is formed upward from the bottom surface of the nozzle mounting block 20. The second recess 20c is formed around the through-hole 20e. The second recess 20c is connected to the first recess 20b through the through-hole 20e. The mounting portion 32a of the treatment liquid release nozzle 21, described later, can be inserted into the second recess 20c.

[0095] The second recess 20c and the through hole 20e are provided so as to be able to change the angle of the processing liquid release nozzle 21 in the horizontal direction relative to the nozzle mounting block 20. Specifically, a plurality of second recesses 20c are provided in a manner such that the mounting portion 32a of the processing liquid release nozzle 21 can be inserted according to the mounting position of the processing liquid release nozzle 21. For example, two second recesses 20c are provided for one processing liquid release nozzle 21. In addition, the two second recesses 20c may be provided so as to partially overlap. That is, the two second recesses 20c may be provided so as to be connected.

[0096] Furthermore, the through-holes 20e are provided so as to be able to change the angle of the processing liquid release nozzle 21. Specifically, the two through-holes 20e corresponding to one processing liquid release nozzle 21 are formed so that their central axes are arranged on circles of the same radius centered on the central axis of the introduction portion 35b of the processing liquid release nozzle 21, which will be described later.

[0097] The third recess 20d is formed so as to be recessed upward from the bottom surface of the nozzle mounting block 20. The introduction portion 35b of the processing liquid release nozzle 21 described later can be inserted into the third recess 20d. The inner wall surface of the third recess 20d is formed in a circular shape.

[0098] The processing liquid release nozzle 21 moves between a standby position and a release position as the arm 10 is moved by the moving mechanism 11. The standby position is where a portion of the processing liquid release nozzle 21 is housed within the notch 4a formed in the outer cup 4. The standby position allows the substrate W to be raised or lowered between the transfer position and the processing position by the holding unit 3. When the processing liquid release nozzle 21 is in the standby position, the substrate W is raised or lowered without contacting the processing liquid release nozzle 21.

[0099] The release position is located inside the standby position in the radial direction of the substrate W. The release position is a position where the processing liquid is released toward the periphery of the substrate W by the processing liquid release nozzle 21 .

[0100] Next, refer to Figures 5 to 7 , illustrating the processing liquid release nozzle 21. Figure 5 It is a front view of the processing liquid discharge nozzle 21 of the first embodiment. Figure 6 It is a plan view of the processing liquid discharge nozzle 21 according to the first embodiment. Figure 7 yes Figure 6 VII-VII sectional view.

[0101] The treatment liquid discharge nozzle 21 discharges the treatment liquid for substrate treatment. The treatment liquid discharge nozzle 21 includes a nozzle body portion 30 , a nozzle discharge portion 31 and a connection portion 32 .

[0102] The nozzle body 30 includes a first body 35 and a second body 36. The first body 35 extends in the Z-axis direction. Figure 7 As shown, a first flow path 35a is formed in the first main body 35. The first flow path 35a is formed along the Z-axis direction. The first flow path 35a is connected to the processing liquid supply path 20a of the nozzle mounting block 20 (see Figure 4 ) is connected. That is, a first flow path 35a is formed in the first main body 35 and is connected to the processing liquid supply path 20a. A third recess 20d (see FIG. 2 ) into which the nozzle mounting block 20 can be inserted is provided in the upper first main body 35. Figure 4 ) of the introduction portion 35b. The outer wall surface of the introduction portion 35b is formed in a circular shape.

[0103] An O-ring 38 is provided between the introduction portion 35b and the third recess 20d of the nozzle mounting block 20 (see Figure 4 The O-ring 38 prevents the processing liquid from leaking from between the first main body portion 35 and the nozzle mounting block 20 .

[0104] The second main body portion 36 is bent relative to the first main body portion 35 and extends obliquely downward from the lower end of the first main body portion 35. Specifically, the second main body portion 36 extends obliquely downward in accordance with the rotation direction of the substrate W.

[0105] Furthermore, in the processing liquid discharge nozzle 21 provided on the left arm 5L and the processing liquid discharge nozzle 21 provided on the right arm 5R, each second main body portion 36 extends obliquely downward from the lower end of the first main body portion 35 in accordance with the rotation direction of the substrate W. Therefore, in the processing liquid discharge nozzle 21 provided on the left arm 5L and the processing liquid discharge nozzle 21 provided on the right arm 5R, the directions in which the second main body portions 36 extend are opposite to each other, for example, in the Y-axis direction.

[0106] like Figure 7 As shown, the second main body 36 forms a second flow path 36a. The second flow path 36a extends obliquely downward from the lower end of the first flow path 35a. The second flow path 36a communicates with the first flow path 35a. As described above, the second main body 36 forms the second flow path 36a that communicates with the first flow path 35a and is curved relative to the first main body 35.

[0107] A recess 36b is formed in the second body portion 36. The recess 36b is formed so as to be recessed from the lower end of the second body portion 36 toward the first body portion 35. The nozzle release portion 31 can be inserted into the recess 36b. A threaded groove is formed in a portion of the inner wall surface of the recess 36b.

[0108] The nozzle release portion 31 releases the processing liquid toward the periphery of the substrate W. The nozzle release portion 31 extends in the direction in which the second main body portion 36 extends. That is, the nozzle release portion 31 extends obliquely downward along the second main body portion 36 .

[0109] The nozzle release portion 31 is inserted into the recess 36b of the second main body portion 36 and mounted on the nozzle main body portion 30. The nozzle release portion 31 is detachable from the front end of the second main body portion 36.

[0110] The nozzle release 31 has an insertion portion 31a that can be inserted into the recess 36b of the second body 36 formed with threads. The threads are formed corresponding to the thread groove formed on the inner wall of the recess 36b. The nozzle release 31 can be screwed into the nozzle body 30.

[0111] An O-ring 39 is provided between the insertion portion 31 a of the nozzle release portion 31 and the second main body portion 36 . The O-ring 39 prevents leakage of the processing liquid from between the nozzle release portion 31 and the second main body portion 36 .

[0112] The nozzle release portion 31 includes a release channel 31b that communicates with the second channel 36a. The diameter of the release channel 31b is smaller than that of the second channel 36a. Specifically, the diameter of the inner wall 31c of the release channel 31b is smaller than that of the inner wall 36c of the second channel 36a. Furthermore, the diameter of the inner wall 31c of the release channel 31b is smaller than that of the inner wall 35c of the first channel 35a.

[0113] Furthermore, a discharge port 31d is formed at the front end of the nozzle discharge portion 31. The discharge port 31d communicates with the discharge flow path 31b and discharges the processing liquid toward the substrate W. The diameter of the discharge port 31d is smaller than that of the discharge flow path 31b. Specifically, the diameter of the inner wall surface 31e of the discharge port 31d is smaller than the diameter of the inner wall surface 31c of the discharge flow path 31b.

[0114] The diameters of the discharge flow path 31b and the discharge port 31d are set according to the type of treatment, the type of treatment liquid to be discharged, etc. That is, in the treatment liquid discharge nozzle 21, the nozzle discharge portion 31 attached to the nozzle body 30 can be replaced according to the type of treatment, the type of treatment liquid to be discharged, etc.

[0115] As described above, the discharge flow path 31 b communicating with the second flow path 36 a is formed in the nozzle discharge portion 31 to discharge the processing liquid toward the periphery of the substrate W. That is, the processing liquid discharge nozzle 21 discharges the processing liquid toward the periphery of the substrate W.

[0116] like Figure 5 and Figure 6 As shown in FIG. 3 , the connecting portion 32 extends horizontally relative to the first main body portion 35. The connecting portion 32 is integrally provided with the first main body portion 35. The connecting portion 32 is provided with a mounting portion 32a protruding upward. Figure 6 As shown, the mounting portion 32a is formed with a screw 22 (see Figure 4) is inserted into the screw hole 32b. A threaded groove corresponding to the thread of the screw 22 is formed on the inner wall surface of the screw hole 32b. The connecting portion 32 can be screwed into the screw 22. By screwing the screw 22, the nozzle body 30 can be fixed to the nozzle mounting block 20.

[0117] <Change in the Release Angle of the Processing Liquid by the Processing Liquid Release Nozzle>

[0118] Regarding the processing liquid release nozzle 21, the processing liquid release nozzle 21 can be rotated in the horizontal direction relative to the nozzle mounting block 20 by rotating it around the introduction portion 35b inserted in the third recess 20d of the nozzle mounting block 20. Moreover, regarding the processing liquid release nozzle 21, by changing the position of the second recess 20c into which the mounting portion 32a of the connecting portion 32 is inserted, the mounting position relative to the nozzle mounting block 20 can be changed. That is, the connecting portion 32 (an example of an angle changing mechanism) can change the mounting position relative to the nozzle mounting block 20 (an example of a fixed component). In other words, the connecting portion 32 can change the angle of the nozzle main body 30 in the horizontal direction relative to the nozzle mounting block 20 (an example of a fixed component) that fixes the nozzle main body 30.

[0119] By changing the mounting position of the nozzle body 30 relative to the nozzle mounting block 20, the release angle of the processing liquid relative to the nozzle mounting block 20 can be changed. In other words, the processing liquid release nozzle 21 can change the release angle of the processing liquid relative to the substrate W. The release angle is the angle in the horizontal direction relative to the tangent line of the substrate W at the position where the processing liquid released by the processing liquid release nozzle 21 collides with the substrate W.

[0120] <Change in Rotation Angle by Arm>

[0121] The arm 5 can be rotated about its axis in the Z-axis direction by a moving mechanism 11. Specifically, the moving mechanism 11 (an example of a rotating mechanism) can rotate the arm 10 in the horizontal direction. Therefore, for example, when releasing a processing liquid onto a substrate W, i.e., during substrate processing, the arm 10 can be rotated and the rotation angle changed, thereby changing the angle at which the processing liquid is released relative to the substrate W. Furthermore, substrate processing can be performed without rotating the arm 10.

[0122] Here, refer to Figure 8 , illustrating the release angle change process of the processing liquid performed by the arm 5. Figure 8 1 is a flowchart illustrating the release angle changing process according to the first embodiment. The release angle changing process is performed by the control unit 6 b of the control device 6 controlling the processing liquid release nozzle 21 and the holding unit 3 .

[0123] The control unit 6b sets the initial angle of the arm 10 (S100) for each process on the substrate W. That is, the control unit 6b sets the rotation angle of the moving mechanism 11 (an example of a rotation mechanism) for each substrate process.

[0124] The control unit 6b rotates the arm 10 according to the set initial angle (S101) and starts releasing the processing liquid from the processing liquid release nozzle 21 at the initial angle (S102). That is, the control unit 6b releases the processing liquid toward the substrate W according to the set rotation angle.

[0125] The control unit 6b determines whether it is time to change the angle (S103). For example, the control unit 6b determines whether a predetermined first time has passed since the start of the release of the treatment liquid. The predetermined first time is a preset time.

[0126] When it is not the angle change timing ( S103 : No), the control unit 6 b continues to release the processing liquid at the initial angle ( S102 ).

[0127] When the angle change timing arrives (S103: Yes), the control unit 6b sets the angle of the arm 10 to a predetermined change angle (S104). The predetermined change angle is a pre-set angle. The control unit 6b rotates the arm 10 according to the set predetermined change angle (S105). In other words, the control unit 6b changes the rotation angle during substrate processing.

[0128] The control unit 6b determines whether the processing end time has arrived (S106). For example, the control unit 6b determines whether a predetermined second time has passed after the angle of the arm 10 is changed to a predetermined changed angle. The predetermined second time is a pre-set time.

[0129] If the treatment end time has not yet arrived (S106: No), the control unit 6b continues the treatment at the predetermined angle change (S105). If the treatment end time has arrived (S106: Yes), the control unit 6b ends the release of the treatment liquid (S107).

[0130] <Effect>

[0131] The processing liquid release nozzle 21 includes a nozzle body 30 and a connecting portion 32 (an example of an angle changing mechanism). The nozzle body 30 includes a first body 35 and a second body 36. A first flow path 35a connected to the processing liquid supply passage 20a is formed in the first body 35. The second body 36 forms a second flow path 36a and is bent relative to the first body. The connecting portion 32 changes the angle of the nozzle body 30 in the horizontal direction relative to the nozzle mounting block 20 (an example of a fixed component) that fixes the nozzle body 30. Specifically, the connecting portion 32 can change the installation position relative to the nozzle mounting block 20.

[0132] Thus, the processing liquid discharge nozzle 21 can change the discharge angle of the processing liquid according to each process performed on the substrate W, for example, the type of film on the substrate W, or the type of processing liquid to be discharged onto the substrate W. Therefore, the processing liquid discharge nozzle 21 can prevent the processing liquid used to etch the periphery of the substrate W from colliding with the substrate W and scattering. Therefore, it is possible to prevent the scattered processing liquid from adhering to areas not being etched, thereby suppressing the generation of particles.

[0133] The processing liquid discharge nozzle 21 includes a nozzle discharge portion 31 . The nozzle discharge portion 31 forms a discharge flow path 31 b communicating with the second flow path 36 a and discharges the processing liquid onto the substrate W. The nozzle discharge portion 31 is detachable from the front end of the second main body 36 .

[0134] Thus, the processing liquid discharge nozzle 21 can replace the nozzle release portion 31 for each treatment of the substrate W. Therefore, the processing liquid discharge nozzle 21 can, for example, etch the periphery of the substrate W with high precision. In addition, for example, if the processing liquid accumulates at the discharge port 31 d of the nozzle release portion 31 , the substrate treatment can be easily resumed by replacing the nozzle release portion 31 .

[0135] Furthermore, the processing liquid discharge nozzle 21 can reduce bubbles generated when the processing liquid flows from the first flow path 35a to the second flow path 36a while the processing liquid flows through the discharge flow path 31b. Therefore, the processing liquid discharge nozzle 21 can suppress the inclusion of bubbles in the processing liquid discharged onto the substrate W, thereby stabilizing the discharge state of the processing liquid.

[0136] In addition, the diameter of the release flow path 31b is smaller than the diameter of the second flow path 36a.

[0137] Thus, the processing liquid discharge nozzle 21 can suppress the generation of bubbles when the processing liquid flows from the second flow path 36a into the discharge flow path 31b. Therefore, the processing liquid discharge nozzle 21 can suppress the inclusion of bubbles in the processing liquid discharged onto the substrate W, and can stabilize the discharge state of the processing liquid.

[0138] The arm 5 (an example of a nozzle arm) includes a processing liquid release nozzle 21, a nozzle mounting block 20 (an example of a fixed component), an arm portion 10, and a moving mechanism 11 (an example of a rotating mechanism). The fixed component is mounted on the arm portion 10. The moving mechanism 11 rotates the arm portion 10 in the horizontal direction. The substrate processing apparatus 1 sets the rotation angle of the moving mechanism 11 according to each substrate processing, and releases the processing liquid onto the substrate W at the set rotation angle.

[0139] Thus, the substrate processing apparatus 1 can release the processing liquid at a release angle according to substrate processing, and can etch the periphery of the substrate W with high precision.

[0140] In addition, the substrate processing apparatus 1 changes the rotation angle during substrate processing.

[0141] Thus, the substrate processing apparatus 1 can uniformly release the processing liquid to the periphery of the substrate W, and can etch the periphery of the substrate W with high precision.

[0142] (Second embodiment)

[0143] Next, a substrate processing apparatus 1 according to a second embodiment will be described. The substrate processing apparatus 1 according to the second embodiment differs from the substrate processing apparatus 1 according to the first embodiment in the processing liquid supply unit 50 . Therefore, the processing liquid supply unit 50 according to the second embodiment will be described here. Components identical to those of the processing liquid supply unit 12 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0144] <Processing Liquid Supply Section>

[0145] like Figure 9 As shown, in the nozzle mounting block 51 of the processing liquid supply unit 50 , one through hole 20 e is provided for one processing liquid discharge nozzle 52 . Figure 9 : is a top view of the processing liquid supply unit 50 of the second embodiment. Figure 9 The processing liquid supply unit 50 is a processing liquid supply unit 50 provided on the right arm 5R.

[0146] like Figure 10 and Figure 11 As shown, in the processing liquid release nozzle 52 , a nozzle main body 53 and a connection portion 54 are separately provided. Figure 10 It is a plan view of the processing liquid discharge nozzle 52 according to the second embodiment. Figure 11 yes Figure 10 XI-XI cross-sectional view.

[0147] like Figure 11 As shown, an engagement groove 55a is formed in the first main body 55. The engagement groove 55a is formed below the introduction portion 35b. The engagement groove 55a is formed along the entire circumference of the first main body 55. The engagement groove 55a forms an engagement portion 55b between the introduction portion 35b and the engagement groove 55a in the first main body 55. The outer wall surface of the engagement portion 55b has a larger diameter than the outer wall surface of the introduction portion 35b.

[0148] The connecting portion 54 includes a pair of arm portions 54a. The pair of arm portions 54a are inserted into the engagement grooves 55a to clamp the first main body 55. The first main body 55 is able to rotate horizontally while being clamped by the pair of arm portions 54a. In other words, the connecting portion 54 (an example of an angle changing mechanism) supports the first main body 55 so that the first main body 55 can rotate. In addition, the upper surfaces of the arm portions 54a abut against the engagement portion 55b of the first main body 55. In other words, the pair of arm portions 54a engage with the engagement portion 55b.

[0149] In addition, if Figure 12 As shown, the first main body portion 55 and the connecting portion 54 are provided with a positioning portion 60 . Figure 12 This is a perspective view of the processing liquid discharge nozzle 52 according to the second embodiment as viewed obliquely from below. The positioning portion 60 includes a first positioning groove 60a and a second positioning groove 60b.

[0150] The first positioning groove 60a is formed in the first main body portion 55. The first positioning groove 60a is formed at a position smaller than the engagement groove 55a (see Figure 11 ) The first main body portion 55 is located at the lower portion. A plurality of first positioning grooves 60a are formed on the outer wall surface of the first main body portion 55. Specifically, a plurality of first positioning grooves 60a are formed along the circumferential direction of the first main body portion 55.

[0151] The second alignment groove 60b is formed in the connection portion 54. For example, the second alignment groove 60b may be formed so as to penetrate the connection portion 54 in the Z-axis direction.

[0152] When the connecting portion 54 is fixed to the nozzle mounting block 51 by the screw 22, the nozzle main body 53 is Figure 13 As shown, the engaging portion 55b of the first main body 55 is sandwiched in the Z-axis direction by the arm portion 54a of the connecting portion 54 and the nozzle mounting block 51. Thus, the nozzle main body 53 is fixed to the nozzle mounting block 51. Figure 13 yes Figure 9 Sectional view XIII-XIII.

[0153] <Change in the Release Angle of the Processing Liquid by the Processing Liquid Release Nozzle>

[0154] When the nozzle body 53 is not fixed to the nozzle mounting block 51 by the screws 22, the first body 55 can be rotated horizontally relative to the connecting portion 54. For example, in the treatment liquid release nozzle 52, by changing the alignment position of the first alignment groove 60a of the first body 55 and the second alignment groove 60b of the connecting portion 54, the angle at which the treatment liquid is released relative to the nozzle mounting block 51 can be changed. In other words, the nozzle body 53 and the connecting portion 54 include the alignment portion 60 that allows the angle of the nozzle body 53 to be changed horizontally relative to the nozzle mounting block 51 (an example of a fixing member).

[0155] <Effect>

[0156] In the processing liquid discharge nozzle 52 , the connection portion 54 (an example of an angle changing mechanism) supports the first main body portion 55 so that the first main body portion 55 is rotatable.

[0157] Thus, the processing liquid discharge nozzle 52 can change the discharge angle of the processing liquid according to each process on the substrate W, for example, the type of film on the substrate W, or the type of processing liquid discharged to the substrate W. Therefore, the generation of particles can be suppressed.

[0158] Furthermore, the first main body 55 and the connecting portion 54 include a positioning portion 60. The positioning portion 60 can change the angle of the nozzle main body 53 in the horizontal direction relative to the nozzle mounting block 51 (an example of a fixing member).

[0159] Thus, the operator can easily align the horizontal angle of the first main body 55 with the connection portion 54 fixed to the nozzle mounting block 51 using the positioning portion 60. Therefore, the operator can easily set the release angle of the processing liquid.

[0160] <Modification of Second Embodiment>

[0161] The processing liquid release nozzle 52 of the modified example may be configured such that a positioning groove is provided as the positioning portion 60 on one of the first main body portion 55 and the connecting portion 54 , and a protruding piece that can be inserted into the positioning groove is provided on the other of the first main body portion 55 and the connecting portion 54 .

[0162] Thus, the processing liquid release nozzle 52 of the modified example can suppress the first body portion 55 from rotating relative to the connection portion 54. Therefore, the processing liquid release nozzle 52 of the modified example can suppress the release angle of the processing liquid from deviating from the set release angle.

[0163] (Third embodiment)

[0164] Next, a substrate processing apparatus 1 according to a third embodiment will be described. The substrate processing apparatus 1 according to the third embodiment differs from the substrate processing apparatus 1 according to the second embodiment in the processing liquid supply unit 70. Therefore, the processing liquid supply unit 70 according to the third embodiment will be described here. Components identical to the processing liquid supply unit 12 according to the first embodiment and the processing liquid supply unit 50 according to the second embodiment are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

[0165] <Processing Liquid Supply Section>

[0166] like Figure 14 As shown, the processing liquid supply part 70 further includes a gas release nozzle 71 . Figure 14 3 is a top view of the processing liquid supply unit 70 of the third embodiment. Figure 14 The processing liquid supply unit 70 is a processing liquid supply unit 70 provided on the left arm 5L.

[0167] The gas release nozzle 71 is mounted on the nozzle mounting block 51. The gas release nozzle 71 is arranged inside the processing liquid release nozzle 52. Specifically, the gas release nozzle 71 is arranged inside the processing liquid release nozzle 52 in the radial direction of the substrate W.

[0168] The gas release nozzle 71 releases gas, such as nitrogen, to the outside. The gas release nozzle 71 releases gas to discharge the processing liquid that collides with the substrate W and scatters above the substrate W to the outside of the substrate W.

[0169] The gas release nozzle 71 releases gas at a release angle in the horizontal direction that is larger than the release angle of the treatment liquid. Figure 15 As shown, the gas release nozzle 71 releases gas at a release angle A2 that is larger than the release angle A1 of the processing liquid, which is the release angle of the processing liquid with respect to the tangent line S of the substrate W at the position T where the processing liquid released from the processing liquid release nozzle 52 collides with the substrate W. That is, the gas release nozzle 71 releases gas at a release angle A2 in the horizontal direction that is larger than the release angle A1 of the processing liquid with respect to the tangent line of the substrate. Figure 15 It is a schematic diagram illustrating the arrangement of the processing liquid release nozzle 52 and the gas release nozzle 71 according to the third embodiment.

[0170] The gas release nozzle 71 releases gas above the substrate W. Specifically, the gas release nozzle 71 releases gas above the position where the processing liquid released from the processing liquid release nozzle 52 collides with the substrate W. Alternatively, the gas release nozzle 71 may release gas slightly upstream and downstream of the position where the processing liquid released from the processing liquid release nozzle 52 collides with the substrate W in the rotation direction of the substrate W.

[0171] <Effect>

[0172] The processing liquid supply unit 70, ie, the arm 5, includes a gas release nozzle 71. The gas release nozzle 71 releases gas to discharge the processing liquid that collides with the substrate W and scatters above the substrate W to the outside of the substrate W.

[0173] Thus, the arm 5 can prevent the scattered processing liquid from colliding with the substrate W and adhering to the radially inner side of the substrate W. Therefore, the arm 5 can prevent the scattered processing liquid from adhering to a portion not being etched, thereby suppressing the generation of particles.

[0174] In addition, the gas release nozzle 71 is arranged on the inner side of the processing liquid release nozzle 52 .

[0175] Thus, the gas release nozzle 71 can discharge the scattered processing liquid that collides with the substrate W to the outside of the substrate W. Therefore, the arm 5 can prevent the scattered processing liquid from adhering to a portion not being etched, thereby suppressing the generation of particles.

[0176] In addition, the gas release nozzle 71 releases gas at a release angle in the horizontal direction that is larger than the release angle of the processing liquid.

[0177] Thus, the arm 5 can discharge the processing liquid that has just collided with the substrate W and scattered to the outside of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to a portion not being etched, thereby suppressing the generation of particles.

[0178] In addition, the gas release nozzle 71 releases gas above the substrate W.

[0179] Thus, the arm 5 can, for example, suppress the processing liquid released to and attached to the periphery of the substrate W from being discharged to the outside of the substrate W, thereby promoting the etching process of the periphery of the substrate W.

[0180] (Fourth embodiment)

[0181] Next, refer to Figures 16 to 18 Here, the substrate processing apparatus 1 of the fourth embodiment will be described. Here, the differences from the substrate processing apparatus 1 of the first embodiment will be mainly described, and the same parts as those of the substrate processing apparatus 1 of the first embodiment are marked with the same reference numerals, and detailed descriptions will be omitted. Figure 16 It is a perspective view showing a portion of a substrate processing apparatus 1 according to a fourth embodiment. Figure 17 1 is a schematic diagram showing a state in which the processing liquid discharge nozzle 21 is at a standby position in the substrate processing apparatus 1 according to the fourth embodiment. Figure 18 Schematic diagram showing the processing liquid discharge nozzle 21 at the discharge position in the substrate processing apparatus 1 according to the fourth embodiment. Here, the right arm 5R side is described as an example, but the left arm 5L side also has the same configuration.

[0182] The substrate processing device 1 also includes a first conductive portion 90 and a second conductive portion 91. The first conductive portion 90 can contact the processing liquid release nozzle 21 and conduct with the processing liquid release nozzle 21. The first conductive portion 90 is installed on the processing liquid release nozzle 21. For example, the first conductive portion 90 is installed on the first main body 35 of the processing liquid release nozzle 21. The first conductive portion 90 is a conductive component, such as a carbon-containing resin. The first conductive portion 90 moves together with the processing liquid release nozzle 21. The processing liquid release nozzle 21 and the first conductive portion 90 are connected by the moving mechanism 11 (refer to Figure 1 ) along the X direction (refer to Figure 1 )move.

[0183] A hole in which the first main body 35 can slide is formed in the first conductive portion 90. That is, when the substrate processing device 1 is in a state where the processing liquid release nozzle 21 contacts the first main body 35, the processing liquid release nozzle 21 can be rotated relative to the nozzle mounting block 20, and the release angle of the processing liquid relative to the nozzle mounting block 20 can be changed. The first conductive portion 90 forms a hole by aligning the positions of two or more components. That is, the first conductive portion 90 is formed by combining two or more components. In addition, the first conductive portion 90 can also be composed of a single component. For example, a notch connected to the hole can be formed in the first conductive portion 90, and the first main body 35 can be inserted into the hole through the notch.

[0184] The second conductive portion 91 can electrically connect to the treatment liquid discharge nozzle 21 by contacting the first conductive portion 90, thereby removing static electricity from the treatment liquid discharge nozzle 21. The second conductive portion 91 is a conductive member, such as a carbon-containing film. The second conductive portion 91 is provided on the outer cup 4 (an example of a cup body). The second conductive portion 91 includes a main body 91a and a deformable portion 91b.

[0185] The main body 91a is provided along the upper surface of the outer cup 4. One end of the main body 91a is provided adjacent to the notch 4a of the outer cup 4. In addition, the other end of the main body 91a is provided adjacent to the processing container 2 (refer to FIG. Figure 1 ) is connected to an external conductive member (eg, a metal member). Alternatively, the main body 91a may be connected to an external conductive member of the processing container 2 via an intermediate member. The intermediate member is a conductive member.

[0186] The deformable portion 91b is connected to the main body 91a. The deformable portion 91b is configured to extend obliquely upward from one end of the main body 91a toward the notch portion 4a. The deformable portion 91b is configured to protrude inward from the main body 91a in the radial direction of the substrate W. In other words, the deformable portion 91b is supported on the main body 91a in a cantilevered state. The deformable portion 91b can contact the first conductive portion 90. The deformable portion 91b is elastically deformable relative to the main body 91a. In addition, the deformable portion 91b is not limited to a shape supported on the main body 91a in a cantilevered state; it can be elastically deformed relative to the main body 91a.

[0187] When the first conductive portion 90 is in the contact position, the deformed portion 91b contacts the first conductive portion 90. When the first conductive portion 90 is in the non-contact position, the deformed portion 91b does not contact the first conductive portion 90.

[0188] The contact position includes, for example, a standby position. When the processing liquid discharge nozzle 21 is in the standby position, the deformed portion 91b contacts the first conductive portion 90. When the processing liquid discharge nozzle 21 is in the standby position, the first conductive portion 90 contacts the second conductive portion 91, forming a conductive path from the processing liquid discharge nozzle 21 to the conductive component outside the processing container 2. The conductive connection between the processing liquid discharge nozzle 21 and the conductive component outside the processing container 2 eliminates static electricity from the processing liquid discharge nozzle 21.

[0189] The non-contact position includes, for example, the released position. When the processing liquid discharge nozzle 21 is in the released position, the deformed portion 91b does not contact the first conductive portion 90. Specifically, when the processing liquid discharge nozzle 21 is in the released position, the first conductive portion 90 and the second conductive portion 91 do not contact each other, and no conductive path is formed from the processing liquid discharge nozzle 21 to the conductive member outside the processing container 2.

[0190] The first conductive portion 90 is moved by the moving mechanism 11 (see Figure 1 ) moves together with the processing liquid discharge nozzle 21. That is, the moving mechanism 11 switches the position of the processing liquid discharge nozzle 21 and the first conductive portion 90 between a contact position where the first conductive portion 90 contacts the second conductive portion 91 and a non-contact position where the first conductive portion 90 and the second conductive portion 91 do not contact each other.

[0191] When the processing liquid release nozzle 21 moves from the non-contact position (release position) to the contact position (standby position), the first conductive portion 90 contacts the deformed portion 91b of the second conductive portion 91. The deformed portion 91b is pressed by the first conductive portion 90, pivoting about the main body 91a, and begins to deform from a position (hereinafter referred to as the "initial position") where it is not in contact with the first conductive portion 90. This suppresses the impact of contact between the first conductive portion 90 and the second conductive portion 91. Furthermore, the deformed portion 91b is elastically deformable relative to the main body 91a, maintaining contact between the first conductive portion 90 and the second conductive portion 91.

[0192] When the processing liquid discharge nozzle 21 moves from the contact position (standby position) to the non-contact position (release position), the first conductive portion 90 separates from the deformed portion 91b of the second conductive portion 91. The deformed portion 91b of the second conductive portion 91 is no longer pressed by the first conductive portion 90 and thus pivots around the main body 91a, returning to its initial position.

[0193] <Effect>

[0194] There is a problem that the processing liquid discharged from the processing liquid discharge nozzle 21 adheres to the processing liquid discharge nozzle 21 due to the charging of the processing liquid discharge nozzle 21. There is a possibility that the processing liquid adhering to the processing liquid discharge nozzle 21 drips onto the substrate W, etc., and generates particles. There is also a possibility that the processing liquid discharged from the processing liquid discharge nozzle 21 is drawn to the side of the processing liquid discharge nozzle 21 and drips onto the substrate W, etc., and generates particles.

[0195] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21, a first conductive portion 90, a second conductive portion 91, and a moving mechanism 11. The first conductive portion 90 can contact the processing liquid discharge nozzle 21 to establish electrical communication with the processing liquid discharge nozzle 21. The second conductive portion 91 can contact the first conductive portion 90 to establish electrical communication with the processing liquid discharge nozzle 21, thereby removing static electricity from the processing liquid discharge nozzle 21. The moving mechanism 11 can switch the position of the processing liquid discharge nozzle 21 and the first conductive portion 90 between a contact position in which the first conductive portion 90 and the second conductive portion 91 are in contact, and a non-contact position in which the first conductive portion 90 and the second conductive portion 91 are not in contact.

[0196] Thus, the substrate processing apparatus 1 can suppress charging of the processing liquid discharge nozzle 21 by bringing the first conductive portion 90 into contact with the second conductive portion 91 at the contact position. Consequently, the substrate processing apparatus 1 can suppress adhesion of the processing liquid to the processing liquid discharge nozzle 21. Furthermore, the substrate processing apparatus 1 can suppress the processing liquid discharged from the processing liquid discharge nozzle 21 from being drawn into the processing liquid discharge nozzle 21. Consequently, the substrate processing apparatus 1 can suppress the generation of particles.

[0197] The second conductive portion 91 includes a deformed portion 91 b. The deformed portion 91 b deforms when it comes into contact with the first conductive portion 90.

[0198] Thus, the substrate processing apparatus 1 can suppress the impact when the first conductive portion 90 and the second conductive portion 91 come into contact. Therefore, the substrate processing apparatus 1 can suppress degradation of the first conductive portion 90 and the second conductive portion 91. Furthermore, the substrate processing apparatus 1 can maintain the first conductive portion 90 and the second conductive portion 91 in contact at the contact position by deforming the deformable portion 91b.

[0199] The substrate processing apparatus 1 includes a holding portion 3 and an outer cup 4 (an example of a cup portion). The holding portion 3 holds a substrate W during substrate processing. The outer cup 4 is provided to surround the outer side of the substrate W held by the holding portion 3. The second conductive portion 91 is provided on the outer cup 4.

[0200] This facilitates arrangement of the second conductive portion 91 in the substrate processing apparatus 1 .

[0201] <Variation of the Fourth Embodiment>

[0202] The substrate processing apparatus 1 of the modified example may include a deformable portion in the first conductive portion 90, or in both the first conductive portion 90 and the second conductive portion 91. That is, at least one of the first conductive portion 90 and the second conductive portion 91 includes a deformable portion that deforms when in contact with the other conductive portion.

[0203] Thus, the substrate processing apparatus 1 of the modified example can suppress the impact when the first conductive portion 90 and the second conductive portion 91 come into contact. Therefore, the substrate processing apparatus 1 of the modified example can suppress degradation of the first conductive portion 90 and the second conductive portion 91. Furthermore, the substrate processing apparatus 1 of the modified example can maintain the first conductive portion 90 and the second conductive portion 91 in contact at the contact position by deforming the deformable portion.

[0204] (Fifth embodiment)

[0205] Reference Figure 19 and Figure 20 , a substrate processing apparatus 1 according to a fifth embodiment will be described. The substrate processing apparatus 1 according to the fifth embodiment differs from the substrate processing apparatus 1 according to the fourth embodiment in the first conductive portion 95 and the second conductive portion 96. Here, the description will focus on the differences from the substrate processing apparatus 1 according to the fourth embodiment. Figure 19 1 is a schematic diagram showing a state in which the first conductive portion 95 is in a non-contact position in the substrate processing apparatus 1 according to the fifth embodiment. Figure 20 1 is a schematic diagram showing a state in which the first conductive portion 95 is at the contact position in the substrate processing apparatus 1 according to the fifth embodiment.

[0206] The first conducting portion 95 includes a main body 95a and an arm 95b. The main body 95a is attached to the processing liquid release nozzle 21 and contacts the processing liquid release nozzle 21. For example, the main body 95a contacts the first main body 35 of the processing liquid release nozzle 21. The main body 95a has a hole formed therein so that the first main body 35 can slide.

[0207] The arm portion 95b is provided so as to extend upward from the main body portion 95a. The upper end of the arm portion 95b is provided above the upper end of the nozzle mounting block 20 and the upper end of the arm portion 10.

[0208] The second conducting portion 96 is disposed in the processing container 2. Specifically, at least a portion of the second conducting portion 96 is disposed at the top of the processing container 2. The second conducting portion 96 includes a main body 96a and a deformable portion 96b. One end of the main body 96a is disposed near the upper portion of the standby position of the processing liquid discharge nozzle 21.

[0209] The deforming portion 96b is provided so as to extend obliquely downward from one end portion of the main body portion 96a. The deforming portion 96b is supported by the main body portion 96a in a cantilevered state. The deforming portion 96b is rotatable in the vertical direction relative to the main body portion 96a.

[0210] The deformed portion 96b contacts the first conducting portion 95 when the first conducting portion 95 is at the contact position. The contact position is a position where the processing liquid discharge nozzle 21 moves upward from the standby position.

[0211] When the first conductive portion 95 is in the non-contact position, the deformed portion 96b does not contact the first conductive portion 95. The non-contact position includes, for example, a release position and a standby position.

[0212] Moving mechanism 11 (see Figure 1 ) By raising and lowering the processing liquid release nozzle 21 and the first conductive portion 95, the positions of the processing liquid release nozzle 21 and the first conductive portion 95 are switched between a contact position and a non-contact position.

[0213] When the processing liquid discharge nozzle 21 moves upward from the standby position, the arm portion 95b of the first conductive portion 95 contacts the deformable portion 96b of the second conductive portion 96. The deformable portion 96b is pushed up by the arm portion 95b and rotates upward from the initial position with the main body 96a as a fulcrum, thereby deforming.

[0214] When the processing liquid discharge nozzle 21 moves downward from the contact position, the arm portion 95b of the first conductive portion 95 separates from the deformed portion 96b of the second conductive portion 96. The deformed portion 96b of the second conductive portion 96 pivots downward about the main body 96a and returns to its initial position.

[0215] <Effect>

[0216] The substrate processing apparatus 1 includes a processing container 2. The processing container 2 houses a processing liquid discharge nozzle 21 and a moving mechanism 11. A second conductive portion 96 is provided in the processing container 2. The moving mechanism 11 raises and lowers the processing liquid discharge nozzle 21 and the first conductive portion 95, thereby switching the positions of the processing liquid discharge nozzle 21 and the first conductive portion 95 between a contact position and a non-contact position.

[0217] Thus, in the substrate processing apparatus 1 , connection between the second conductive portion 96 provided in the processing container 2 and a conductive member outside the processing container 2 is facilitated.

[0218] <Variation of the Fifth Embodiment>

[0219] In the substrate processing apparatus 1 according to the modified example, the arm portion 95 b of the first conductive portion 95 may be modified.

[0220] (Sixth embodiment)

[0221] Reference Figure 21 Here, the substrate processing apparatus 1 of the sixth embodiment will be described. Here, the description will focus on the differences from the substrate processing apparatus 1 of the first embodiment, and the same reference numerals are given to the same parts as those of the substrate processing apparatus 1 of the first embodiment, and detailed descriptions will be omitted. Figure 21 1 is a perspective view showing a portion of the substrate processing apparatus 1 according to the sixth embodiment. Although the right arm 5R is described as an example here, the left arm 5L also has the same configuration.

[0222] The arm 100 of the substrate processing apparatus 1 is a conductive member, such as a carbon-containing resin. The arm 100 contacts the processing liquid discharge nozzle 21 and is electrically connected to the processing liquid discharge nozzle 21. Specifically, the arm 100 includes a contact portion 100a. The contact portion 100a contacts the processing liquid discharge nozzle 21 and is electrically connected to the processing liquid discharge nozzle 21. A hole is formed in the contact portion 100a through which the processing liquid discharge nozzle 21 can slide.

[0223] The arm 100 and the processing container 2 (see Figure 1 ) is connected to an external conductive component (e.g., a metal component) of the processing container 2. The arm 100 forms a conductive path from the processing liquid release nozzle 21 to the conductive component outside the processing container 2. This conductive path is formed regardless of the position of the processing liquid release nozzle 21. In other words, the processing liquid release nozzle 21 is constantly de-electrified via the conductive path.

[0224] <Effect>

[0225] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21 and an arm 100. The arm 100 contacts the processing liquid discharge nozzle 21 and is in communication with the processing liquid discharge nozzle 21.

[0226] Thus, the substrate processing apparatus 1 can suppress charging of the processing liquid discharge nozzle 21 by removing charge from the processing liquid discharge nozzle 21 through the arm 100 .

[0227] (Seventh embodiment)

[0228] Reference Figure 22 Here, the substrate processing apparatus 1 of the seventh embodiment will be described. Here, the differences from the substrate processing apparatus 1 of the first embodiment will be mainly described, and the same parts as those of the substrate processing apparatus 1 of the first embodiment are marked with the same reference numerals, and detailed descriptions will be omitted. Figure 22 1 is a perspective view showing a portion of the substrate processing apparatus 1 according to the seventh embodiment. Although the right arm 5R is described as an example here, the left arm 5L also has the same configuration.

[0229] The substrate processing device 1 includes an ionizer 101. The ionizer 101 is mounted on the arm 10. The ionizer 101 is disposed above the processing liquid release nozzle 21. The ionizer 101 removes static electricity from the processing liquid release nozzle 21. The ionizer 101 irradiates X-rays toward the processing liquid release nozzle 21, generating ions around the processing liquid release nozzle 21. The processing liquid release nozzle 21 is de-charged by neutralizing the charge of the charged processing liquid release nozzle 21 with ions. For example, a transparent resin plate is provided on the lower surface of the ionizer 101, and X-rays are irradiated through the resin plate.

[0230] When the holding portion 3 does not hold a substrate W, the ion generator 101 irradiates the processing liquid discharge nozzle 21 with X-rays to remove static electricity from the processing liquid discharge nozzle 21. In other words, when there is no substrate W in the processing container 2, the ion generator 101 irradiates the processing liquid discharge nozzle 21 with X-rays to remove static electricity from the processing liquid discharge nozzle 21.

[0231] <Effect>

[0232] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21 and an ion generator 101. The ion generator 101 removes static electricity from the processing liquid discharge nozzle 21.

[0233] Thus, the substrate processing apparatus 1 can suppress the charging of the processing liquid discharge nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles caused by the charging of the processing liquid discharge nozzle 21.

[0234] When the holding portion 3 does not hold the substrate W, the ion generator 101 removes static electricity from the processing liquid discharge nozzle 21 .

[0235] Thus, the substrate processing apparatus 1 can prevent the processing liquid from adhering to the substrate W when performing static elimination on the processing liquid discharge nozzle 21 .

[0236] <Variation of the Seventh Embodiment>

[0237] The ion generator 101 of the substrate processing apparatus 1 of the modified example can generate ions internally and supply the generated ions to the processing liquid discharge nozzle 21 to remove static electricity from the processing liquid discharge nozzle 21. The ion generator 101 supplies the generated ions to the processing liquid discharge nozzle 21 through a plurality of air supply holes provided on the lower surface.

[0238] (Variation)

[0239] The substrate processing apparatus 1 of the modified example can configure a portion of the moving mechanism 11 on the nozzle mounting block 20, 51 or the arm 10. For example, the substrate processing apparatus 1 of the modified example rotates the nozzle mounting block 51 (an example of a fixed component) relative to the arm 10 using the moving mechanism 11 (an example of a rotating mechanism). As a result, the substrate processing apparatus 1 of the modified example can change the release angle of the processing liquid during substrate processing. Therefore, the substrate processing apparatus 1 of the modified example can evenly release the processing liquid to the periphery of the substrate W, and can etch the periphery of the substrate W with high precision.

[0240] In addition, the substrate processing apparatus 1 of the modified example may not be provided with the processing liquid supply path 20a in the nozzle mounting blocks 20 and 51, but may be provided with a nozzle mounting block 20 or 51. Figure 23 As shown, the treatment liquid supply pipe 5 a is directly connected to the treatment liquid release nozzle 80 . Figure 23 1 is a cross-sectional view showing a portion of a modified embodiment of the arm 5. A resin nut 81 is attached to the front end of the treatment liquid supply pipe 5a. Threads are formed on the first body 82 of the treatment liquid release nozzle 80 to allow the resin nut 81 to be screwed in.

[0241] Thus, the processing liquid supply passage 20 a is not provided in the nozzle mounting blocks 20 and 51 , and the nozzle mounting blocks 20 and 51 can be simplified in structure, thereby reducing costs.

[0242] Furthermore, in the treatment liquid release nozzle 52 of the modified example, the inner wall surfaces 31c and 31e of the nozzle release portion 31 may be more hydrophilic than the inner wall surface 35c of the first flow path 35a and the inner wall surface 36c of the second flow path 36a. For example, in the treatment liquid release nozzle 52 of the modified example, a portion of the inner wall surfaces 31c and 31e of the release flow path 31b, including the inner wall surface 31e of the release opening 31d, may be hydrophilized. Furthermore, in the treatment liquid release nozzle 52 of the modified example, the nozzle body 30 may be made of a resin with high chemical resistance and high hydrophobicity, while the nozzle release portion 31 may be made of a material with a higher hydrophilicity than the nozzle body 30.

[0243] As a result, bubbles are less likely to adhere to the discharge port 31d, and when the processing liquid is discharged, the bubbles are less likely to be discharged together with the processing liquid. Therefore, the discharge state of the processing liquid can be stabilized.

[0244] Furthermore, the substrate processing apparatus 1 of the modified example can be provided with a substrate alignment mechanism on the arm 5. The substrate alignment mechanism is provided on the left arm 5L and the right arm 5R, respectively. The substrate alignment mechanism horizontally clamps the substrate W and aligns the position of the substrate W placed on the holding portion 3. Specifically, the substrate alignment mechanism adjusts the position of the substrate W so that the center of the substrate W is aligned with the rotation axis of the holding portion 3. The substrate processing apparatus 1 of the modified example causes the holding portion 3 to hold the substrate W whose position has been adjusted by the substrate alignment mechanism.

[0245] Thus, the substrate processing apparatus 1 of the modified example can etch the periphery of the substrate W with high precision.

[0246] Furthermore, the substrate processing apparatus 1 of each embodiment may be combined with the substrate processing apparatus 1 of a modified example. For example, the gas release nozzle 71 may be provided in the substrate processing apparatus 1 of the first embodiment. For example, the processing liquid supply unit 50 of the second embodiment may be used in the substrate processing apparatus 1 of the fourth to seventh embodiments. Furthermore, while the processing liquid release nozzles 21, 52, and 80 of each embodiment are described as etching the peripheral edge of the substrate W, they may also be used as processing liquid release nozzles that etch or clean not only the peripheral edge of the substrate W but also the entire surface of the substrate W.

[0247] Furthermore, the embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. In practice, the embodiments described above may be implemented in a variety of ways. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A treatment liquid release nozzle for releasing a treatment liquid for substrate treatment, characterized in that: include: The nozzle body has: a first body formed with a first flow path communicating with the treatment liquid supply path; and a second main body portion having a second flow path communicating with the first flow path and bent relative to the first main body portion; and a nozzle release portion having a release flow path communicating with the second flow path and capable of releasing the processing liquid onto the substrate; The nozzle release portion is detachable relative to the front end of the second main body portion. The inner wall surface of the nozzle release portion has a higher hydrophilicity than the inner wall surfaces of the first flow channel and the second flow channel.

2. The treatment liquid release nozzle according to claim 1, wherein: The nozzle release portion is made of a material having a higher hydrophilicity than that of the nozzle main body.

3. The treatment liquid release nozzle according to claim 1 or 2, characterized in that: The nozzle release portion is screwed into the nozzle body portion.

4. The treatment liquid release nozzle according to any one of claims 1 to 3, characterized in that: The diameter of the release flow path is smaller than the diameter of the second flow path.

5. A nozzle arm, characterized in that: include: The treatment liquid release nozzle according to any one of claims 1 to 4; Fixed components; an arm capable of mounting the fixing member; and A rotating mechanism for rotating the fixing member or the arm in the horizontal direction.

6. The nozzle arm according to claim 5, wherein: The rotating mechanism is capable of rotating the fixing member relative to the arm portion.

7. The nozzle arm according to claim 5 or 6, characterized in that: A gas release nozzle for releasing gas is included, and the gas release nozzle discharges the processing liquid that collides with the substrate and scatters above the substrate to the outside of the substrate.

8. The nozzle arm according to claim 7, wherein: The gas release nozzle is arranged on the inner side of the processing liquid release nozzle.

9. The nozzle arm according to claim 7 or 8, characterized in that: The gas release nozzle releases the gas at a release angle in the horizontal direction that is larger than a release angle of the processing liquid relative to a tangent line of the substrate.

10. A substrate processing device, characterized in that: include: The nozzle arm according to any one of claims 5 to 9; and a substrate rotating unit for rotating the mounted substrate, The processing liquid discharge nozzle discharges the processing liquid toward the periphery of the substrate.

11. A substrate processing device, characterized in that: include: The nozzle arm according to any one of claims 5 to 9; a substrate rotating portion for rotating the mounted substrate; and a control unit for controlling the processing liquid release nozzle and the substrate rotating unit, The control unit sets a rotation angle of the rotation mechanism according to each substrate process, and releases the processing liquid toward the substrate at the set rotation angle.

12. The substrate processing apparatus according to claim 11, wherein: The control section changes the rotation angle during the substrate processing.

13. A substrate processing device, characterized in that: include: The treatment liquid release nozzle according to any one of claims 1 to 4; and An arm portion contacts the processing liquid release nozzle and is in conduction with the processing liquid release nozzle.

14. A substrate processing device, characterized in that: include: The treatment liquid release nozzle according to any one of claims 1 to 4; and An ion generator removes static electricity from the treatment liquid discharge nozzle.

15. The substrate processing apparatus according to claim 14, wherein: comprising a holding portion for holding the substrate while performing the substrate processing, The ion generator removes static electricity from the processing liquid release nozzle when the holding portion does not hold the substrate.

16. A substrate processing method, characterized in that: The substrate processing method uses the nozzle arm according to any one of claims 5 to 9 to release the processing liquid to the substrate, comprising: a step of setting a rotation angle in the rotation mechanism according to each substrate processing; and The step of releasing the processing liquid toward the substrate at the set rotation angle.

Images