Power device, power module and vehicle

Abstract

The invention relates to a power device, a power module and a vehicle, and the power device comprises a first conductive substrate, a first insulating layer, a first heat conduction substrate, a first chip and a temperature sensor, a first groove is formed in the first conductive substrate, and a second groove is formed in the first heat conduction substrate; the first chip is arranged in the first groove, and the temperature sensor is arranged in the second groove; the projection of the first chip and the projection of the temperature sensor in the first insulating layer are overlapped. The power device can accurately monitor the junction temperature of the chip in real time.

Description

Technical Field

[0001] The present invention relates to the field of vehicle technology, and in particular to a power device, a power module and a vehicle. Background Art

[0002] As vehicles evolve towards high-voltage platforms and high-power density, real-time monitoring of the junction temperature of power semiconductor devices (such as IGBTs, SiC MOSFETs, etc.) is crucial to ensuring the reliability and safety of electric drive systems, on-board chargers (OBCs), and battery management systems (BMSs).

[0003] The prior art discloses a temperature detection circuit and a temperature detection device, including a module temperature detection circuit, an ambient temperature detection circuit and an MCU control circuit; the module temperature detection circuit and the ambient temperature detection circuit are both connected to the MCU control circuit, and the control end of the MCU control circuit is connected to the controlled end of the power semiconductor.

[0004] The prior art discloses an external temperature measurement technology, which measures the junction temperature of a chip by attaching an external thermocouple.

[0005] However, the above existing technologies are difficult to meet the real-time and accuracy requirements of chip junction temperature management. Summary of the Invention

[0006] The present invention provides a power device, a power module and a vehicle, aiming to solve the problem of being unable to monitor the junction temperature of a chip in real time and accurately.

[0007] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0008] According to a first aspect of the present application, a power device is provided, comprising: a first conductive substrate, a first insulating layer, and a first thermally conductive substrate stacked in sequence, as well as a first chip and a temperature sensor; the first conductive substrate having a first groove, and the first thermally conductive substrate having a second groove; the first chip being disposed in the first groove, and the temperature sensor being disposed in the second groove; and the projections of the first chip and the temperature sensor in the first insulating layer overlapping.

[0009] According to the above technical means, because the projections of the first chip and the temperature sensor in the first insulating layer overlap, the temperature sensor can directly sense the core temperature rise area of ​​the first chip's heat source, reducing the delay in the heat transfer path and improving the real-time monitoring of the first chip's junction temperature. Secondly, the first thermally conductive substrate fixes the temperature sensor via the second groove, and the first thermally conductive substrate also serves as a heat dissipation channel to avoid measurement errors caused by local heat accumulation. The temperature sensor is embedded in the second groove of the first thermally conductive substrate, reducing the distance between it and the first insulating layer, thereby eliminating the air gap thermal resistance and ensuring temperature transfer accuracy. Therefore, the power device provided by this embodiment can achieve real-time and accurate monitoring of the chip's junction temperature.

[0010] In addition, the first chip is arranged in the first groove, and the temperature sensor is arranged in the second groove, which can avoid additional lateral area occupation and conforms to the miniaturization trend of power devices.

[0011] In one possible embodiment, the first chip has a first surface and a second surface opposite to each other in the thickness direction; the first chip has a first pole, a second pole, a control pole and a Kelvin pole, the first pole is located on the first surface, the second pole, the control pole and the Kelvin pole are located on the second surface; wherein the first pole is one of the source and the drain, and the second pole is the other of the source and the drain; the first pole is electrically connected to the bottom wall surface of the first groove.

[0012] According to the above technical means, the power device provided by the present application has the first pole located on the first surface, the second pole, the control pole and the Kelvin pole located on the second surface; the first surface contacts the bottom wall of the first groove, and the first pole is electrically connected to the bottom wall of the first groove. In this way, the distance between the temperature sensor and the first pole of the first chip is short, and the first pole is located on the main current path of the first chip. In this way, the temperature sensor can sense the temperature of the core heating area of ​​the first chip in real time, avoiding measurement errors caused by delays in the heat conduction path. Secondly, both the first surface and the second surface of the first chip participate in heat dissipation, reducing the risk of local hot spots and improving the heat dissipation of the first chip.

[0013] In a possible embodiment, the power device further includes: a first conductive layer and a second insulating layer, the second insulating layer being located between the first conductive layer and the first conductive substrate; the first conductive layer includes a first electrode block, a second electrode block, a third electrode block and a fourth electrode block that are spaced apart from each other; the first electrode block is electrically connected to the first conductive substrate, the second electrode block is electrically connected to the second electrode, the third electrode block is electrically connected to the control electrode, and the fourth electrode block is electrically connected to the Kelvin electrode.

[0014] According to the above-mentioned technical means, the power device provided in the present application can be quickly connected to the external circuit directly through the first electrode block, the second electrode block, the third electrode block and the fourth electrode block without the need for welding. Through the first electrode block, the second electrode block, the third electrode block and the fourth electrode block, multiple power devices can be flexibly configured in series or in parallel (for example, half-bridge or full-bridge topology) to adapt to different application scenarios.

[0015] In one possible embodiment, the power device has a first through hole, which extends from a surface of the first conductive layer away from the second insulating layer to a surface of the second insulating layer away from the first conductive layer; the first through hole corresponds to the second pole to expose the second pole.

[0016] According to the above-mentioned technical means, the power device provided by the present application, since the first through hole exposes the second electrode of the first chip in the power device, the first through hole can be used as a black module verification window. Even after packaging, the data of the temperature sensor can still be calibrated without disassembling the power device, which helps to improve the mass production yield and can save certain testing costs.

[0017] In a possible embodiment, the power device further includes: a third insulating layer, disposed on a side of the first conductive layer away from the first conductive substrate; a plurality of second openings are provided in the third insulating layer, and the second openings correspond one-to-one to the first electrode block, the second electrode block, the third electrode block and the fourth electrode block, respectively, so as to expose the first electrode block, the second electrode block, the third electrode block and the fourth electrode block.

[0018] According to the above-mentioned technical means, in the power device provided in the present application, the third insulating layer is arranged on the side of the first conductive layer away from the first conductive substrate, and a plurality of second openings are provided in the third insulating layer, and the plurality of second openings expose the first electrode block, the second electrode block, the third electrode block and the fourth electrode block. In this way, the third insulating layer can avoid accidental touching of adjacent electrode blocks during welding or electrical connection, thereby reducing the risk of short circuit; the third insulating layer completely covers the non-opening area, and can also protect the first conductive layer from environmental erosion.

[0019] In a possible embodiment, the power device further includes: a second conductive layer and a fourth insulating layer, the fourth insulating layer being arranged between the second conductive layer and the first thermally conductive substrate; the temperature sensor having a first electrode and a second electrode, the first electrode and the second electrode being both located on the surface of the temperature sensor close to the second conductive layer; the second conductive layer including a first conductive block and a second conductive block, the first electrode being connected to the first conductive block, and the second electrode being connected to the second conductive block.

[0020] According to the above-mentioned technical means, in the power device provided by the present application, since the temperature sensor is arranged in the second groove, the first electrode of the temperature sensor is led out through the first conductive block, and the second electrode of the temperature sensor is led out through the second conductive block. In this way, the temperature sensor can be directly connected to an external test device through the first conductive block and the second conductive block. There is no need to disassemble the power device, and a calibration current can be directly applied to the temperature sensor. There is no need to repackage after calibration, which can avoid the risk of secondary contamination or mechanical damage.

[0021] In a possible embodiment, the power device further includes: a first connector and a second connector; the first conductive layer further includes: a fifth electrode block and a sixth electrode block spaced apart from each other, the first electrode is connected to the fifth electrode block through the first connector, and the second electrode is connected to the sixth electrode block through the second connector.

[0022] According to the above-mentioned technical means, in the power device provided by the present application, the connection terminals of the first chip and the temperature sensor are both arranged on the same side of the power device, so that the connection can be completed by only one-sided operation. When connecting the temperature sensor, flipping the power device can be avoided, thereby improving the convenience of operation.

[0023] According to a second aspect of the present application, a power module is provided, comprising: a first half-bridge unit and a second half-bridge unit, wherein the first half-bridge unit and the second half-bridge unit each comprise at least one power device as described in any of the above embodiments.

[0024] According to the above-mentioned technical means, in the power module provided by the present application, the power devices in the first half-bridge unit and / or the second half-bridge unit are interconnected through high current density terminals, and can realize series connection, parallel connection or a mixed topology including series connection and parallel connection to adapt to the requirements of different application scenarios. By connecting multiple power devices in series, the operating voltage range can be improved, which is suitable for high-voltage application scenarios; by connecting multiple power devices in parallel, the current carrying capacity is multiplied to meet high current requirements; by flexibly combining series and parallel connection methods, it can adapt to the diverse needs of complex application scenarios.

[0025] In one possible embodiment, the power module further includes: a first connecting line, connecting the first pole of the power device in the first half-bridge unit and used to connect to the positive pole of the power supply; a second connecting line, connecting the second pole of the power device in the second half-bridge unit and used to connect to the negative pole of the power supply; and a third connecting line, connecting the second pole of the power device in the first half-bridge unit and the first pole of the power device in the second half-bridge unit.

[0026] In one possible embodiment, the first half-bridge unit and / or the second half-bridge unit includes at least two power devices, the first conductive substrates in the at least two power devices are located on the same layer and are an integrated structure, the first insulating layers in the at least two power devices are located on the same layer and are an integrated structure, and the first thermally conductive substrates in the at least two power devices are located on the same layer and are an integrated structure.

[0027] According to the above technical means, the power module provided by the present application has the following features: the first conductive substrates in at least two power devices are located on the same layer and are an integrated structure; the first insulating layers in at least two power devices are located on the same layer and are an integrated structure; and the first thermal conductive substrates in at least two power devices are located on the same layer and are an integrated structure. The integrated structure can avoid the risk of delamination caused by multiple film layers, thereby improving the reliability of the power module structure.

[0028] In a possible implementation, the power module further includes: a first liquid cooling device, provided on a side of the second conductive layer of the at least two power devices away from the first heat-conducting substrate.

[0029] According to the above technical means, in the power module provided by this application, the first liquid cooling device can evenly absorb and remove the heat generated by the power device through fluid convection, thereby reducing the temperature of the power device and reducing the resistance in the power device.

[0030] In a possible implementation manner, the first half-bridge unit and / or the second half-bridge unit includes two power devices, and the two power devices are arranged along a thickness direction of the power device and are symmetrically disposed.

[0031] According to the above technical means, the power module provided by the present application can reduce the lateral area occupied by the power module because the two power devices are arranged along the thickness direction of the power device and are symmetrically arranged.

[0032] In a possible implementation, the power module further includes: a second liquid cooling device, disposed between the two power components.

[0033] According to the above technical means, there are two power devices in the power module provided by this application that can share a cooling channel, so that the liquid cooling efficiency can be maximized.

[0034] According to the third aspect of the present application, a vehicle is provided, comprising: the power module described in any of the above embodiments, and a drive circuit, wherein the input end of the drive circuit is electrically connected to the control electrode of the power device, and the output end of the drive circuit is electrically connected to the Kelvin electrode of the power device.

[0035] Beneficial effects of the present invention:

[0036] (1) The power device of the present application reduces the delay of the heat transfer path and improves the real-time performance and accuracy of monitoring the junction temperature of the first chip.

[0037] (2) The power devices of the present application can be flexibly configured to connect multiple power devices in series or in parallel (for example, half-bridge or full-bridge topology) to adapt to different application scenarios.

[0038] (3) After packaging, the power device of the present application can still directly perform black module calibration of the temperature sensor data without disassembling the power device, which helps to improve the mass production yield and can save a certain amount of testing costs.

[0039] (4) The power device of the present application can be directly connected to an external test device. A calibration current can be directly applied to the temperature sensor without disassembling the power device. There is no need to repackage the device after calibration, thus avoiding the risk of secondary contamination or mechanical damage.

[0040] It should be noted that the technical effects brought about by the implementation methods of the second and third aspects of this application can refer to the technical effects brought about by the corresponding implementation methods in the first aspect, and will not be repeated here.

[0041] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 Shown is a structural diagram of a power device according to an exemplary embodiment;

[0043] Figure 2 Shown is a top view of a power device according to an exemplary embodiment;

[0044] Figure 3 A top view of another power device according to an exemplary embodiment is shown;

[0045] Figure 4 A top view of another power device according to an exemplary embodiment is shown;

[0046] Figure 5 A partial perspective view of a power device according to an exemplary embodiment is shown;

[0047] Figure 6 Shown is a partial structural diagram of a power device according to an exemplary embodiment;

[0048] Figure 7 Shown is a partial structural diagram of another power device shown as an exemplary embodiment;

[0049] Figure 8Shown is a structural diagram of a power module according to an exemplary embodiment;

[0050] Figure 9 Shown is a structural diagram of another power module according to an exemplary embodiment;

[0051] Figure 10 Shown is a structural diagram of another power module according to an exemplary embodiment.

[0052] Figure numerals: 100-power device, 11-first conductive substrate, 21-first insulating layer, 31-first thermally conductive substrate, 40-first chip, 41-first pole, 42-second pole, 43-control pole, 44-Kelvin pole, 50-temperature sensor, 51-first electrode, 52-second electrode, C1-first groove, C2-second groove, m1-first surface, m2-second surface, 61-first conductive layer, 22-second insulating layer, 23-third insulating layer, 611-first electrode block, 612-second electrode block, 613-third electrode block, 614-fourth electrode block, 615-fifth electrode block, 616-sixth electrode block, g1-first through hole, K2-second opening, 62-second conductive layer, 621-first conductive block, 622-second conductive block, 24-fourth insulating layer, L1-first connecting member, L2-second connecting member. DETAILED DESCRIPTION

[0053] In order to enable ordinary people in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0054] It should be noted that the terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate so that the embodiments of the application described herein can be implemented in an order other than those illustrated or described herein. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0055] In the description of this application, it should be understood that the terms "upper," "lower," "left," "right," "front," "back," "inner," "outer," and the like, indicating directions or positional relationships, are based on the directions or relative positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of this application and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific direction, be constructed, or operate in a specific direction. Therefore, they should not be construed as limitations on this application. Unless otherwise specified, the above-mentioned directionality descriptions may be flexibly set in actual application, provided that the relative positional relationships shown in the accompanying drawings are met.

[0056] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connected," and "connected" should be understood broadly. For example, they may refer to fixed connections, detachable connections, or integral connections. They may be directly connected, indirectly connected through an intermediary, or internally connected between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0057] In the embodiments of the present application, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, article, or device comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of other identical elements in the process, article, or device comprising the element.

[0058] In the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be interpreted as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0059] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0060] The embodiment of the present disclosure provides a power device 100, referring to Figure 1The power device 100 includes a first conductive substrate 11, a first insulating layer 21, and a first thermally conductive substrate 31, which are stacked in sequence, as well as a first chip 40 and a temperature sensor 50. The first conductive substrate 11 has a first groove C1, and the first thermally conductive substrate 31 has a second groove C2. The first chip 40 is disposed in the first groove C1, and the temperature sensor 50 is disposed in the second groove C2. The projections of the first chip 40 and the temperature sensor 50 in the first insulating layer 21 overlap.

[0061] In the power device 100 provided by this embodiment, since the projections of the first chip 40 and the temperature sensor 50 in the first insulating layer 21 overlap, the temperature sensor 50 can directly sense the core temperature rise area of ​​the heat source of the first chip 40, reducing the delay in the heat transfer path and improving the real-time monitoring of the junction temperature of the first chip 40. Secondly, the first thermally conductive substrate 31 fixes the temperature sensor 50 through the second groove C2. At the same time, the first thermally conductive substrate 31 also serves as a heat dissipation channel to avoid measurement errors caused by local heat accumulation. The temperature sensor 50 is embedded in the second groove C2 of the first thermally conductive substrate 31, reducing the distance between it and the first insulating layer 21, thereby eliminating the air gap thermal resistance and ensuring the accuracy of temperature transfer. Therefore, the power device 100 provided by this embodiment can achieve real-time and accurate monitoring of the chip junction temperature.

[0062] In addition, the first chip 40 is disposed in the first groove C1, and the temperature sensor 50 is disposed in the second groove C2. The openings of the first groove C1 and the second groove C2 are disposed opposite to each other, which can avoid additional lateral area occupation and conforms to the trend of miniaturization of the power device 100.

[0063] In some embodiments, the first chip 40 includes a SiC MOSFET chip (Silicon Carbide Metal-Oxide Semiconductor Field Effect Transistor) or an IGBT chip (Insulated Gate Bipolar Transistor).

[0064] In some embodiments, the temperature sensor 50 includes a thermocouple or an NTC thermistor. The thermocouple can collect the temperature pulse signal of the first chip 40 in real time.

[0065] In some embodiments, the first insulating layer 21 may be ceramic or a flame retardant glass fiber reinforced epoxy resin laminate (FR4).

[0066] In some embodiments, the first chip 40 has a first surface m1 and a second surface m2 opposite to each other in the thickness direction; the first chip 40 has a first pole 41, a second pole 42, a control pole 43 and a Kelvin pole 44, the first pole 41 is located on the first surface m1, the second pole 42, the control pole 43 and the Kelvin pole 44 are located on the second surface m2; the first pole 41 is electrically connected to the bottom wall of the first groove C1.

[0067] Because the first electrode 41 is located on the first surface m1, and the second electrode 42, control electrode 43, and Kelvin electrode 44 are located on the second surface m2; the first surface m1 contacts the bottom wall of the first groove C1, and the first electrode 41 is electrically connected to the bottom wall of the first groove C1. This shortens the distance between the temperature sensor 50 and the first electrode 41 of the first chip 40, and the first electrode 41 is located on the main current path of the first chip 40. This allows the temperature sensor 50 to sense the temperature of the core heating area of ​​the first chip 40 in real time, avoiding measurement errors caused by delays in the heat conduction path. Furthermore, both the first surface m1 and the second surface m2 of the first chip 40 contribute to heat dissipation, reducing the risk of local hot spots and improving the heat dissipation performance of the first chip 40.

[0068] The first electrode 41 can be electrically connected to the bottom wall of the first groove C1 by welding or silver sintering the first electrode 41 of the first chip 40 to the bottom wall of the first groove C1. This can reduce the resistance between the first electrode and the bottom wall of the first groove C1.

[0069] In some embodiments, the first electrode 41 is a source electrode and the second electrode 42 is a drain electrode. In other embodiments, the first electrode 41 is a drain electrode and the second electrode 42 is a source electrode.

[0070] Since the temperature sensor 50 can sense the temperature of the core heating area of ​​the first chip 40 in real time, the temperature sensor 50 and the first chip 40 are embedded in a manner, so that the temperature sensor 50 is in close contact with the substrate of the first chip 40, so that the response time is ≤0.3ms (traditional external temperature sensor ≥5ms), and the junction temperature error is reduced from ±5℃ to ±1.2℃, avoiding overheating and failure of the first chip 40; under the working condition of 150℃, the life prediction accuracy of the first chip 40 is improved by 3 times (based on the Arrhenius model).

[0071] Combined with reference Figure 1 、 Figure 2 and Figure 3 The power device 100 further includes: a first conductive layer 61 and a second insulating layer 22, wherein the second insulating layer 22 is located between the first conductive layer 61 and the first conductive substrate 11; the first conductive layer 61 includes a first electrode block 611, a second electrode block 612, a third electrode block 613 and a fourth electrode block 614 spaced apart from each other; the first electrode block 611 is electrically connected to the first conductive substrate 11, the second electrode block 612 is electrically connected to the second electrode 42, the third electrode block 613 is electrically connected to the control electrode 43, and the fourth electrode block 614 is electrically connected to the Kelvin electrode 44.

[0072] With this design, the first chip 40 can be quickly connected to the external circuit directly through the first electrode block 611, the second electrode block 612, the third electrode block 613 and the fourth electrode block 614 without the need for welding. Through the first electrode block 611, the second electrode block 612, the third electrode block 613 and the fourth electrode block 614, multiple power devices 100 can be flexibly configured in series or parallel (for example, half-bridge or full-bridge topology) to adapt to different application scenarios.

[0073] In some embodiments, continue to combine reference Figure 1 、 Figure 2 and Figure 3 The power device 100 further includes: a plurality of conductive pillars H, each extending through the second insulating layer 22; the plurality of conductive pillars H including a first sub-conductive pillar, a second sub-conductive pillar, a third sub-conductive pillar, and a fourth sub-conductive pillar. The first electrode block 611 is electrically connected to the first conductive substrate 11 via the first sub-conductive pillar, the second electrode block 612 is electrically connected to the second electrode 42 via the second sub-conductive pillar, the third electrode block 613 is electrically connected to the control electrode 43 via the third sub-conductive pillar, and the fourth electrode block 614 is electrically connected to the Kelvin electrode 44 via the fourth sub-conductive pillar.

[0074] Exemplarily, the plurality of conductive pillars H include copper conductive pillars.

[0075] In some embodiments, the plurality of conductive pillars H may be formed by laser drilling holes in the second insulating layer 22 and then filling holes with a conductive paste.

[0076] In some embodiments, in conjunction with reference Figure 1 and Figure 3 The power device 100 has a first through-hole g1, which extends from the surface of the first conductive layer 61 away from the second insulating layer 22 to the surface of the second insulating layer 22 away from the first conductive layer 61. The first through-hole g1 corresponds to the second electrode 42, exposing the second electrode 42. In other words, the second electrode 42 is visible through the first through-hole g1. Because the first through-hole g1 exposes the second electrode 42 of the first chip 40 in the power device 100, the first through-hole g1 serves as a black module verification window, allowing calibration of the temperature sensor 50 data even after packaging without disassembling the power device 100. This helps improve mass production yield and reduces testing costs.

[0077] The power device 100 can be calibrated by an infrared thermal imager after packaging, thereby ensuring the feasibility of the calibration test of the power device 100 after packaging.

[0078] Therefore, the power device 100 provided in this embodiment not only adopts a high current density welding terminal design (for example, the first electrode block 611, the second electrode block 612, the third electrode block 613 and the fourth electrode block 614), but also supports large current working conditions and has flexible expansion capabilities to meet the needs of different application scenarios. The temperature sensor 50 is embedded and directly arranged on the vertical heat transfer path of the first chip 40. It can accurately reflect the maximum junction temperature of the first chip 40 and can integrate an infrared calibration window without destroying the package integrity of the first chip 40 to realize the calibration of the temperature monitoring system.

[0079] Combined with reference Figure 1 and Figure 4 The power device 100 further includes a third insulating layer 23 disposed on a side of the first conductive layer 61 away from the first conductive substrate 11. A plurality of second openings K2 are defined in the third insulating layer 23. The second openings K2 correspond to the first electrode block, the second electrode block, the third electrode block, and the fourth electrode block, respectively, to expose the first electrode block 611, the second electrode block 612, the third electrode block 613, and the fourth electrode block 614. The second openings K2 expose the first electrode block 611, the second electrode block 612, the third electrode block 613, and the fourth electrode block 614. This third insulating layer 23 prevents accidental contact with adjacent electrode blocks during welding or electrical connection, reducing the risk of short circuits. The third insulating layer 23 completely covers the non-opening areas, further protecting the first conductive layer 61 from environmental corrosion.

[0080] refer to Figure 1 The power device 100 further includes: a second conductive layer 62 and a fourth insulating layer 24, wherein the fourth insulating layer 24 is disposed between the second conductive layer 62 and the first thermally conductive substrate 31; the temperature sensor 50 includes a first electrode 51 and a second electrode 52, both of which are located on the surface of the temperature sensor 50 close to the second conductive layer 62; the second conductive layer 62 includes a first conductive block 621 and a second conductive block 622, wherein the first electrode 51 is connected to the first conductive block 621, and the second electrode 52 is connected to the second conductive block 622.

[0081] Since the temperature sensor 50 is arranged in the second groove C2, the first electrode 51 of the temperature sensor 50 is led out through the first conductive block 621, and the second electrode 52 of the temperature sensor 50 is led out through the second conductive block 622. In this way, the temperature sensor 50 can be directly connected to an external test device through the first conductive block 621 and the second conductive block 622. There is no need to disassemble the power device 100, and a calibration current can be directly applied to the temperature sensor 50. There is no need to repackage after calibration, which can avoid the risk of secondary contamination or mechanical damage.

[0082] In some embodiments, the power device further includes: a plurality of conductive members, the plurality of conductive members extending through the fourth insulating layer 24; the plurality of conductive members including a first sub-conductive member and a second sub-conductive member. The first electrode 51 is connected to the first conductive block 621 via the first sub-conductive member, and the second electrode 52 is connected to the second conductive block 622 via the second sub-conductive member.

[0083] Exemplarily, the plurality of conductive members include copper conductive members, and may also be aluminum conductive members, etc.

[0084] Combined with reference Figure 3 、 Figure 5 、 Figure 6 and Figure 7 The power device 100 further includes a first connector L1 and a second connector L2. The first conductive layer 61 further includes a fifth electrode block 615 and a sixth electrode block 616 spaced apart from each other. The first electrode 51 is connected to the fifth electrode block 615 via the first connector L1, and the second electrode 52 is connected to the sixth electrode block 616 via the second connector L2. Because the terminals of the first chip 40 and the temperature sensor 50 are both located on the same side of the power device 100, connection can be completed with a single-sided operation. This avoids flipping the power device 100 when connecting the temperature sensor 50, improving operational convenience.

[0085] In addition, in order to improve the structural stability of the power device 100, the power device 100 also includes a plastic encapsulation layer (not shown), which can form mechanical support and reduce the risk of mechanical stress damage to the first chip 40. The third insulating material 23 can be part of the plastic encapsulation layer. When the power device 100 includes a first connector L1 and a second connector L2, the first connector L1 and the second connector L2 also penetrate part of the plastic encapsulation layer.

[0086] refer to Figure 8 An embodiment of the present disclosure further provides a power module 1000, comprising: a first half-bridge unit 1001 and a second half-bridge unit 1002, wherein the first half-bridge unit 1001 and the second half-bridge unit 1002 each comprise at least one power device 100 as in any of the above embodiments.

[0087] The power module 1000 provided in the present application, the power devices in the first half-bridge unit 1001 and / or the second half-bridge unit 1002 are interconnected through high current density terminals, and can realize series, parallel or mixed topologies including series and parallel connections to adapt to the requirements of different application scenarios. By connecting multiple power devices 100 in series, the operating voltage range can be improved, which is suitable for high-voltage application scenarios and can be compatible with voltages of 400V-1500V, such as 400V, 1200V or 1500V; by connecting multiple power devices 100 in parallel, the current carrying capacity is multiplied to meet the requirements of large current and high power, for example, the power can cover 10kW-200kW; by flexibly combining series and parallel modes, it can adapt to the diverse needs of complex application scenarios, thereby improving the scalability and versatility of the power module 1000, so that it can adapt to different interfaces of different main drive inverters, and can also meet different power requirements without redesigning the layout of the power module 1000.

[0088] The power module 1000 provided in this application can be flexibly adapted to multiple power platforms. By designing the sizes of the first half-bridge unit 1001 and the second half-bridge unit 1002 to meet standardized units, such as a 50mm×30mm series or parallel combination, multiple power devices can be connected in series to quickly adapt to 400V~1500V voltages, and multiple power devices can be connected in parallel to achieve 10kW~200kW power requirements, reducing customized development costs by 80%. There is no need to redesign the layout of power devices, only the number of power devices needs to be adjusted (such as upgrading an electric vehicle inverter from 400V to 800V only requires adding multiple power devices in series). The versatility of spare parts is improved, the inventory types are reduced, and maintenance costs can be reduced. A single standardized unit can cover multiple product lines, the number of SKUs is reduced by 70%, and the versatility of spare parts is improved.

[0089] In some embodiments, continue to refer to Figure 8 The power module 1000 further includes a first connecting line S1, a second connecting line S2, and a third connecting line S3. The first connecting line S1 connects the first electrode 41 of the power device 100 in the first half-bridge unit 1001 and is used to connect to the positive electrode of the power supply. The second connecting line S2 connects the second electrode 42 of the power device 100 in the second half-bridge unit 1002 and is used to connect to the negative electrode of the power supply. The third connecting line S3 connects the second electrode 42 of the power device 100 in the first half-bridge unit 1001 and the first electrode 41 of the power device 100 in the second half-bridge unit 1002.

[0090] The first connecting wire S1 may be a DC busbar connection terminal, and the second connecting wire S2 may be a DC busbar connection terminal. The connection between the first connecting wire S1 and the first pole 41 may be welding or mechanical connection, the connection between the second connecting wire S2 and the second pole 42 may be welding or mechanical connection, and the connection between the third connecting wire S3 and the first pole 41 and the second pole 42 may be welding or mechanical connection. The mechanical connection may be a clamping connection, a bolt connection, or the like.

[0091] Since the layout of power devices with rigid connections is limited, flexible connections can be used, such as using flexible printed circuit (FPC) connection units to adapt to special-shaped structures.

[0092] In some embodiments, reference Figure 9 The first half-bridge unit 1001 includes at least two power devices 100, the first conductive substrates 11 in at least two power devices 100 are located on the same layer and are an integrated structure, the first insulating layers 21 in at least two power devices 100 are located on the same layer and are an integrated structure, and the first thermal conductive substrates 31 in at least two power devices 100 are located on the same layer and are an integrated structure.

[0093] In some embodiments, reference Figure 9 The second half-bridge unit 1002 includes at least two power devices 100, the first conductive substrates 11 in at least two power devices 100 are located on the same layer and are an integrated structure, the first insulating layers 21 in at least two power devices 100 are located on the same layer and are an integrated structure, and the first thermal conductive substrates 31 in at least two power devices 100 are located on the same layer and are an integrated structure.

[0094] In some embodiments, reference Figure 9 The first half-bridge unit 1001 and the second half-bridge unit 1002 each include at least two power devices 100, the first conductive substrates 11 in at least two power devices 100 are located on the same layer and are an integrated structure, the first insulating layers 21 in at least two power devices 100 are located on the same layer and are an integrated structure, and the first thermal conductive substrates 31 in at least two power devices 100 are located on the same layer and are an integrated structure.

[0095] Since the first conductive substrates 11 in at least two power devices 100 are located on the same layer and are an integrated structure, the first insulating layers 21 in at least two power devices 100 are located on the same layer and are an integrated structure, and the first thermal conductive substrates 31 in at least two power devices 100 are located on the same layer and are an integrated structure, the integrated structure can avoid the risk of delamination caused by multiple film layers, thereby improving the reliability of the power module structure.

[0096] In some embodiments, reference Figure 9The power module 1000 further includes a first liquid cooling device 1003 disposed on a side of the second conductive layer 62 of at least two power devices 100 away from the first heat-conducting substrate 31. The first liquid cooling device 1003 can evenly absorb heat generated by the power devices 100 through fluid convection, thereby lowering the temperature of the power devices 100 and reducing the resistance of the power devices 100.

[0097] Illustratively, the first liquid cooling device 1003 may be a liquid cooling plate having a cooling channel provided therein. Cooling water is introduced into the cooling channel to cool the power module 100 .

[0098] For another example, the cooling pipe may be used, and cooling water is introduced into the cooling pipe to cool the power module 100 .

[0099] Among them, multiple temperature sensors 50 can be set in the power module 1000, each temperature sensor 50 monitors the hot spot of the first chip 40 inside the power module 1000, and the layout of multiple power devices 100 enables the local hot spots of the temperature sensor 50 to form a thermal network. Then, according to the junction temperature characterization of the thermal network, a dynamic matching first liquid cooling device 1003 is used to achieve precise temperature control, which helps to improve the heat dissipation efficiency.

[0100] In some embodiments, reference Figure 10 The first half-bridge unit 1001 and / or the second half-bridge unit 1002 includes two power devices 100, which are arranged symmetrically along the thickness direction of the power device 100. Since the two power devices 100 are arranged symmetrically along the thickness direction of the power device 100, the lateral area occupied by the power module 1000 can be reduced.

[0101] The two power devices 100 are arranged along the thickness direction of the power device 100 and are symmetrically arranged, which means that the two temperature sensors 50 in the two power devices 100 are located on the inner side and the two first chips 40 are located on the outer side.

[0102] In some embodiments, reference Figure 10 , further comprising: a second liquid cooling device 1004, disposed between the two power devices 100. In this way, the two power devices 100 in the power module 1000 can share a cooling channel, thus maximizing the liquid cooling efficiency.

[0103] The structure of the second liquid cooling device 1004 may be the same as the structure of the first liquid cooling device 1003 in any of the above embodiments, and will not be described in detail here.

[0104] An embodiment of the present disclosure further provides a vehicle, comprising: the power module 1000, the drive circuit, the motor, and the power supply as described in any of the above embodiments.

[0105] The drive circuit integrates a gate driver to support high-frequency switching. The input of the drive circuit is electrically connected to the control electrode of the power device, and the output of the drive circuit is electrically connected to the Kelvin electrode of the power device. The motor is electrically connected to the third connecting line. The positive electrode of the power supply is electrically connected to the first connecting line, and the negative electrode of the power supply is electrically connected to the second connecting line.

[0106] The above are only specific embodiments of the present application, but the scope of protection of the present application is not limited thereto. Any changes or replacements within the technical scope disclosed in this application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A power device, characterized in that: include: A first conductive substrate, a first insulating layer, and a first thermally conductive substrate are sequentially stacked, wherein the first conductive substrate has a first groove, and the first thermally conductive substrate has a second groove; a first chip and a temperature sensor, wherein the first chip is disposed in the first groove, and the temperature sensor is disposed in the second groove; The first chip overlaps with a projection of the temperature sensor in the first insulating layer.

2. The power device according to claim 1, wherein: The first chip has a first surface and a second surface opposite to each other in a thickness direction; wherein the first electrode is one of a source electrode and a drain electrode, and the second electrode is the other of the source electrode and the drain electrode; The first chip has a first electrode, a second electrode, a control electrode and a Kelvin electrode, the first electrode is located on the first surface, and the second electrode, the control electrode and the Kelvin electrode are located on the second surface; The first electrode is electrically connected to the bottom wall surface of the first groove.

3. The power device according to claim 2, characterized in that Also includes: a first conductive layer and a second insulating layer, wherein the second insulating layer is located between the first conductive layer and the first conductive substrate; The first conductive layer includes a first electrode block, a second electrode block, a third electrode block and a fourth electrode block that are spaced apart from each other; The first electrode block is electrically connected to the first conductive substrate, the second electrode block is electrically connected to the second electrode, the third electrode block is electrically connected to the control electrode, and the fourth electrode block is electrically connected to the Kelvin electrode.

4. The power device according to claim 3, characterized in that The power device has a first through hole, which passes through from a surface of the first conductive layer away from the second insulating layer to a surface of the second insulating layer away from the first conductive layer; the first through hole corresponds to the second pole to expose the second pole.

5. The power device according to claim 3, characterized in that: Also includes: a third insulating layer, provided on a side of the first conductive layer away from the first conductive substrate; The third insulating layer is provided with a plurality of second openings, which correspond one-to-one to the first electrode block, the second electrode block, the third electrode block and the fourth electrode block, respectively, so as to expose the first electrode block, the second electrode block, the third electrode block and the fourth electrode block.

6. The power device according to claim 3, characterized in that Also includes: a second conductive layer and a fourth insulating layer, wherein the fourth insulating layer is provided between the second conductive layer and the first thermally conductive substrate; The temperature sensor comprises a first electrode and a second electrode, wherein the first electrode and the second electrode are both located on a surface of the temperature sensor close to the second conductive layer; The second conductive layer includes a first conductive block and a second conductive block. The first electrode is connected to the first conductive block, and the second electrode is connected to the second conductive block.

7. The power device according to claim 6, characterized in that: Also includes: a first connecting member and a second connecting member; The first conductive layer further includes: a fifth electrode block and a sixth electrode block spaced apart from each other, the first electrode is connected to the fifth electrode block via the first connecting member, and the second electrode is connected to the sixth electrode block via the second connecting member.

8. A power module, characterized in that: include: The first half-bridge unit and the second half-bridge unit each include at least one power device according to any one of claims 1 to 7.

9. The power module according to claim 8, characterized in that: Also includes: a first connecting line connected to a first electrode of a power device in the first half-bridge unit and used to connect to a positive electrode of a power supply; a second connecting line connected to the second electrode of the power device in the second half-bridge unit and used to connect to the negative electrode of the power supply; The third connecting line connects the second electrode of the power device in the first half-bridge unit and the first electrode of the power device in the second half-bridge unit.

10. The power module according to claim 8, characterized in that: The first half-bridge unit and / or the second half-bridge unit include at least two power devices, the first conductive substrates in the at least two power devices are located on the same layer and are an integrated structure, the first insulating layers in the at least two power devices are located on the same layer and are an integrated structure, and the first thermal conductive substrates in the at least two power devices are located on the same layer and are an integrated structure.

11. The power module according to claim 10, characterized in that: Also includes: The first liquid cooling device is provided on a side of the second conductive layer of the at least two power devices away from the first heat-conducting substrate.

12. The power module according to claim 8, characterized in that: The first half-bridge unit and / or the second half-bridge unit includes two power devices, and the two power devices are arranged along the thickness direction of the power device and are symmetrically disposed.

13. The power module according to claim 12, characterized in that: Also includes: The second liquid cooling device is arranged between the two power devices.

14. A vehicle, characterized in that: include: The power module according to any one of claims 8 to 13; A driving circuit, wherein an input end of the driving circuit is electrically connected to the control electrode of the power device, and an output end of the driving circuit is electrically connected to the Kelvin electrode of the power device.

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