High-power electromagnetic metasurface

Abstract

The invention discloses a high-power electromagnetic metasurface, which relates to the technical field of electromagnetic protection and consists of three layers of unit structures, namely an upper layer unit, a middle layer unit and a lower layer unit from top to bottom in sequence, the upper layer unit comprises an upper metal layer and an upper dielectric substrate layer; the upper metal layer is positioned on the upper surface of the upper dielectric substrate layer and consists of two back-to-back E-shaped metal strips and a first diode; the middle layer unit comprises a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of snakelike metal wires moving in the transverse direction. The lower layer unit comprises a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and is composed of two back-to-back n-shaped metal strips and a second diode. According to the invention, the shielding characteristic and the transmission characteristic can be respectively shown under different power densities.

Description

Technical Field

[0001] The present invention relates to the field of electromagnetic protection technology, and in particular to a high-power electromagnetic metasurface. Background Art

[0002] The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.

[0003] With the rapid development of electronic technology, the integration density and operating frequency of electronic devices have continued to increase. Strong electromagnetic pulses (EMP) and high-power microwaves (HPM) have gradually become important weapons that threaten communications and electronic equipment on the modern battlefield. EMP systems can instantly disrupt or destroy the normal operation of electronic equipment through powerful electromagnetic field pulses, causing signal interruption, device burnout, or even system paralysis. HPM systems, on the other hand, attack target equipment with high-power microwave energy, burning out electronic components. The emergence and application of these systems have made electromagnetic protection technology even more important.

[0004] Electromagnetic protection primarily targets the coupling pathways between electromagnetic waves and electronic devices, including "backdoor coupling" and "frontdoor coupling." Backdoor coupling occurs when electromagnetic energy enters a system through holes in the device casing, cable connectors, and other pathways. Currently, this is primarily addressed through relatively mature technologies such as shielding, grounding, and filtering. Frontdoor coupling occurs when electromagnetic waves directly enter a system through antennas and transmission lines, disrupting normal equipment operation. This coupling method, due to its greater directness and destructiveness, represents a key challenge in current electromagnetic protection technology.

[0005] Traditional front-door protection technologies primarily include limiters, frequency-selective surfaces (FSS), and plasmas. However, each of these approaches has its own drawbacks. For example, while limiters can effectively block high-power electromagnetic waves, they suffer from slow response, high insertion loss, and long recovery times. While FSSs offer frequency-selective transmission, their shielding performance is insufficient against high-power microwaves. Plasma, on the other hand, is limited by high processing costs and unstable performance. Therefore, how to effectively shield against strong electromagnetic interference while ensuring stable transmission of normal signals has become a core challenge facing front-door protection technology.

[0006] Energy selective surfaces (ESSs) achieve adaptive response to electromagnetic wave power density by loading a conventional frequency selective surface with nonlinear devices (such as PIN diodes). Under low-power conditions, ESSs exhibit high transmittance, allowing normal signals to pass through. However, under high-power conditions, their impedance changes, resulting in high shielding effectiveness, shielding against strong electromagnetic waves. This characteristic allows ESSs to operate without external power or bias circuitry, offering advantages such as simple structure and reliable performance.

[0007] For example, patent publication number CN117477235A discloses a miniaturized energy selective surface, but its shielding bandwidth at high-power incident light and its wave transmission bandwidth at low-power incident light are narrow. Therefore, existing ESS technology still faces many technical challenges: (1) Insufficient shielding bandwidth: Most ESSs have good shielding performance at specific frequencies, but their shielding effectiveness decreases rapidly when the operating frequency band deviates from the center frequency; (2) Insufficient structural miniaturization: How to achieve efficient protection function of ESS in a short period of time is an urgent problem to be solved. Summary of the Invention

[0008] The purpose of the present invention is to provide a high-power electromagnetic metasurface to solve the problems existing in the prior art.

[0009] The technical solutions of the present invention are as follows: A high-power electromagnetic metasurface, consisting of a three-layer unit structure, which is an upper unit, a middle unit, and a lower unit from top to bottom; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

[0010] Furthermore, the two back-to-back E-shaped metal strips face opposite directions and have a certain distance between their backs. The first diode is located at the symmetric center of the upper unit to connect the two back-to-back E-shaped metal strips.

[0011] Furthermore, two ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

[0012] Furthermore, the two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between the backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

[0013] Furthermore, the upper dielectric substrate layer, the middle dielectric substrate layer and the lower dielectric substrate layer are all made of dielectric materials with a relatively small loss tangent.

[0014] Furthermore, the arrangement period of the upper layer units, the middle layer units and the lower layer units is P.

[0015] Furthermore, the interval between the upper unit and the middle unit and the interval between the middle unit and the lower unit are both h0.

[0016] Furthermore, the thickness of the upper dielectric substrate layer is h1; the distance between the back-to-back E-shaped metal strips is d1; the back width of the E-shaped metal strip is w1; the width of the upper and lower narrow branches of the E-shaped metal strip is l1; and the width of the middle wide branch is l2.

[0017] Furthermore, the thickness of the dielectric substrate layer is h2; and the width of the serpentine metal line is w2.

[0018] Furthermore, the thickness of the lower dielectric substrate layer is h3; the distance between the backs of the two back-to-back Π-shaped metal strips is d2; the back width of the Π-shaped metal strip is w3; and the width of the two lateral branches of the Π-shaped metal strip is l3.

[0019] Compared with the existing technology, the beneficial effects of the present invention are: The present invention discloses a high-power electromagnetic metasurface that exhibits shielding and transmission properties at different power densities. Specifically: The two back-to-back E-shaped metal strips on the upper dielectric substrate layer face opposite directions, and the branches are connected by a first diode. The first diode exhibits different equivalent characteristics under different power densities: when low power density is incident, the first diode is equivalent to a small capacitor, allowing electromagnetic waves to transmit; when high power density is incident, the first diode is equivalent to a small inductor in series with a small resistor, thereby blocking high-power signals.

[0020] The serpentine metal wire in the middle metal layer has high-frequency shielding performance; The two back-to-back π-shaped metal strips in the lower metal layer are connected through a second diode, whose impedance characteristics change with the power density of the incident wave, and can shield high-power electromagnetic waves and transmit low-power signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the upper unit structure of the present invention; Figure 2 Schematic diagram of the middle layer unit structure of the present invention; Figure 3 Schematic diagram of the lower unit structure of the present invention; Figure 4 A side view of the high-power electromagnetic metasurface provided by the present invention; Figure 5 This is a schematic diagram of the equivalent circuit model provided by the present invention; Figure 6 The frequency response of the high-power electromagnetic metasurface provided by the present invention in the shielding state; Figure 7This is the frequency response of the high-power electromagnetic metasurface provided by the present invention in the transmission state.

[0022] Figure numerals: 1-upper metal layer, 2-upper dielectric substrate layer, 3-middle metal layer, 4-middle dielectric substrate layer, 5-lower metal layer, 6-lower dielectric substrate layer, 7-E-shaped metal strip, 8-first diode, 9-snake-shaped metal line, 10-Π-shaped metal strip, 11-second diode. DETAILED DESCRIPTION

[0023] It should be noted that relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus comprising the element.

[0024] The features and performance of the present invention are further described in detail below with reference to the embodiments.

[0025] Example 1 With the rapid development of electronic technology, the integration density and operating frequency of electronic devices have continued to increase. Strong electromagnetic pulses (EMP) and high-power microwaves (HPM) have gradually become important weapons that threaten communications and electronic equipment on the modern battlefield. EMP systems can instantly disrupt or destroy the normal operation of electronic equipment through powerful electromagnetic field pulses, causing signal interruption, device burnout, or even system paralysis. HPM systems, on the other hand, attack target equipment with high-power microwave energy, burning out electronic components. The emergence and application of these systems have made electromagnetic protection technology even more important.

[0026] Electromagnetic protection primarily targets the coupling pathways between electromagnetic waves and electronic devices, including "backdoor coupling" and "frontdoor coupling." Backdoor coupling occurs when electromagnetic energy enters a system through holes in the device casing, cable connectors, and other pathways. Currently, this is primarily addressed through relatively mature technologies such as shielding, grounding, and filtering. Frontdoor coupling occurs when electromagnetic waves directly enter a system through antennas and transmission lines, disrupting normal equipment operation. This coupling method, due to its greater directness and destructiveness, represents a key challenge in current electromagnetic protection technology.

[0027] Traditional front-door protection technologies primarily include limiters, frequency-selective surfaces (FSS), and plasmas. However, each of these approaches has its own drawbacks. For example, while limiters can effectively block high-power electromagnetic waves, they suffer from slow response, high insertion loss, and long recovery times. While FSSs offer frequency-selective transmission, their shielding performance is insufficient against high-power microwaves. Plasma, on the other hand, is limited by high processing costs and unstable performance. Therefore, how to effectively shield against strong electromagnetic interference while ensuring stable transmission of normal signals has become a core challenge facing front-door protection technology.

[0028] Energy selective surfaces (ESSs) achieve adaptive response to electromagnetic wave power density by loading a conventional frequency selective surface with nonlinear devices (such as PIN diodes). Under low-power conditions, ESSs exhibit high transmittance, allowing normal signals to pass through. However, under high-power conditions, their impedance changes, resulting in high shielding effectiveness, shielding against strong electromagnetic waves. This characteristic allows ESSs to operate without external power or bias circuitry, offering advantages such as simple structure and reliable performance.

[0029] For example, patent publication number CN117477235A discloses a miniaturized energy selective surface, but its shielding bandwidth at high-power incident light and its wave transmission bandwidth at low-power incident light are narrow. Therefore, existing ESS technology still faces many technical challenges: (1) Insufficient shielding bandwidth: Most ESSs have good shielding performance at specific frequencies, but their shielding effectiveness decreases rapidly when the operating frequency band deviates from the center frequency; (2) Insufficient structural miniaturization: How to achieve efficient protection function of ESS in a short period of time is an urgent problem to be solved.

[0030] Therefore, this embodiment proposes a high-power electromagnetic metasurface to solve the above problems. Figure 1-5 , specifically composed of a three-layer unit structure, from top to bottom are upper unit, middle unit and lower unit; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

[0031] In this embodiment, specifically, two back-to-back E-shaped metal strips face opposite directions and have a certain distance between their backs. The first diode is located at the symmetric center of the upper unit to connect the two back-to-back E-shaped metal strips.

[0032] In this embodiment, specifically, both ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

[0033] In this embodiment, specifically, the two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between their backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

[0034] Through the above design, a high-power electromagnetic metasurface disclosed in this embodiment exhibits shielding characteristics and transmission characteristics under different power densities.

[0035] Among them, the two back-to-back E-shaped metal strips on the upper dielectric substrate layer are oriented in opposite directions, and the branches are connected by a first diode. The first diode exhibits different equivalent characteristics under different power densities: when low power density is incident, the first diode is equivalent to a small capacitor, allowing electromagnetic waves to transmit; when high power density is incident, the first diode is equivalent to a small inductor in series with a small resistor, thereby blocking high-power signals.

[0036] The serpentine metal wires in the middle metal layer have high-frequency shielding properties.

[0037] The two back-to-back π-shaped metal strips in the lower metal layer are connected through a second diode, whose impedance characteristics change with the power density of the incident wave, and can shield high-power electromagnetic waves and transmit low-power signals.

[0038] Example 2 Example 2 further illustrates the high-power electromagnetic metasurface proposed in Example 1.

[0039] A high-power electromagnetic metasurface, see Figure 1-5 , specifically composed of a three-layer unit structure, from top to bottom are upper unit, middle unit and lower unit; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

[0040] In this embodiment, specifically, two back-to-back E-shaped metal strips face opposite directions and have a certain distance between their backs. The first diode is located at the symmetric center of the upper unit to connect the two back-to-back E-shaped metal strips.

[0041] In this embodiment, specifically, both ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

[0042] In this embodiment, specifically, the two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between their backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

[0043] In this embodiment, specifically, the upper dielectric substrate layer, the middle dielectric substrate layer, and the lower dielectric substrate layer are all made of dielectric materials with relatively small loss tangent.

[0044] Example 3 Example 3 further explains the high-power electromagnetic metasurface proposed in Example 2.

[0045] A high-power electromagnetic metasurface, see Figure 1-5 , specifically composed of a three-layer unit structure, from top to bottom are upper unit, middle unit and lower unit; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

[0046] In this embodiment, specifically, two back-to-back E-shaped metal strips face opposite directions and have a certain distance between their backs. The first diode is located at the symmetric center of the upper unit to connect the two back-to-back E-shaped metal strips.

[0047] In this embodiment, specifically, both ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

[0048] In this embodiment, specifically, the two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between their backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

[0049] In this embodiment, specifically, the upper dielectric substrate layer, the middle dielectric substrate layer, and the lower dielectric substrate layer are all made of dielectric materials with relatively small loss tangent.

[0050] In this embodiment, specifically, the arrangement period of the upper layer units, the middle layer units and the lower layer units is P.

[0051] In this embodiment, specifically, the interval between the upper unit and the middle unit and the interval between the middle unit and the lower unit are both h0.

[0052] In this embodiment, specifically, the thickness of the upper dielectric substrate layer is h1; the distance between the back-to-back E-shaped metal strips is d1; the back width of the E-shaped metal strip is w1; the width of the upper and lower narrow branches of the E-shaped metal strip is l1; and the width of the middle wide branch is l2.

[0053] In this embodiment, specifically, the thickness of the dielectric substrate layer is h2; and the width of the serpentine metal line is w2.

[0054] In this embodiment, specifically, the thickness of the lower dielectric substrate layer is h3; the distance between the backs of the two back-to-back Π-shaped metal strips is d2; the back width of the Π-shaped metal strip is w3; and the width of the two lateral branches of the Π-shaped metal strip is l3.

[0055] In this embodiment, it should be noted that the above-mentioned design parameters P, h0, h1, d1, w1, l1, l2, h2, w2, h3, d2, w3, l3, etc. can be specifically designed according to needs. This embodiment only means that different needs can be met by setting the above parameters, and their specific values ​​are not limited here.

[0056] Example 4 Example 4 is based on a high-power electromagnetic metasurface proposed in Example 3, and specific parameters are designed as follows.

[0057] A high-power electromagnetic metasurface, see Figure 1-5 , specifically composed of a three-layer unit structure, from top to bottom are upper unit, middle unit and lower unit; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

[0058] In this embodiment, specifically, two back-to-back E-shaped metal strips face opposite directions and have a certain distance between their backs. The first diode is located at the symmetric center of the upper unit to connect the two back-to-back E-shaped metal strips.

[0059] In this embodiment, specifically, both ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

[0060] In this embodiment, specifically, the two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between their backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

[0061] In this embodiment, specifically, the upper dielectric substrate layer, the middle dielectric substrate layer, and the lower dielectric substrate layer are all made of dielectric materials with relatively small loss tangent.

[0062] In this embodiment, specifically, the arrangement period of the upper layer units, the middle layer units and the lower layer units is P.

[0063] In this embodiment, specifically, the interval between the upper unit and the middle unit and the interval between the middle unit and the lower unit are both h0.

[0064] In this embodiment, specifically, the thickness of the upper dielectric substrate layer is h1; the distance between the back-to-back E-shaped metal strips is d1; the back width of the E-shaped metal strip is w1; the width of the upper and lower narrow branches of the E-shaped metal strip is l1; and the width of the middle wide branch is l2.

[0065] In this embodiment, specifically, the thickness of the dielectric substrate layer is h2; and the width of the serpentine metal line is w2.

[0066] In this embodiment, specifically, the thickness of the lower dielectric substrate layer is h3; the distance between the backs of the two back-to-back Π-shaped metal strips is d2; the back width of the Π-shaped metal strip is w3; and the width of the two lateral branches of the Π-shaped metal strip is l3.

[0067] In this embodiment, the unit period of the upper metal layer, the upper dielectric substrate layer, the middle metal layer, the middle dielectric substrate layer, the lower metal layer, and the lower dielectric substrate layer is P=15 mm.

[0068] In this embodiment, the thicknesses of the upper dielectric substrate layer, the middle dielectric substrate layer, and the lower dielectric substrate layer are h1 = 1 mm, h2 = 1 mm, and h3 = 1 mm, respectively, and the interval between the layers is h0 = 22 mm.

[0069] In this embodiment, the distance between the two back-to-back E-shaped metal strips in the upper metal layer is d1=1mm, the back width of the E-shaped metal strip is w1=1mm, the width of the upper and lower narrow branches of the E-shaped metal strip is l1=0.5mm, and the width of the middle wide branch is l2=1mm.

[0070] In this embodiment, the line width of the serpentine metal line in the middle metal layer is w2 = 0.1 mm.

[0071] In this embodiment, the distance between the two back-to-back Π-shaped metal strips in the lower metal layer is d2=1 mm, the back width of the Π-shaped metal strip is w3=1 mm, and the width of the two lateral branches of the Π-shaped metal strip is l3=1.5 mm.

[0072] In this embodiment, the first diode and the second diode are RN371 from Rohm.

[0073] Attachment Figure 6 and attached Figure 7 The frequency response curves for both shielded and transmitted states are shown. In the shielded state, the surface impedance increases significantly, effectively reflecting high-power signals; in the transmitted state, the surface impedance decreases, allowing low-power signals to pass smoothly.

[0074] The above-described embodiments merely represent specific implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of protection of the present application. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the technical concept of the present application, and all such variations and improvements fall within the scope of protection of the present application.

[0075] This background section is provided to generally present the context of the invention, and the work of the presently named inventors, the work to the extent described in this background section, and aspects of the description in this section that did not constitute prior art at the time of filing are neither explicitly nor implicitly admitted to be prior art to the present invention.

Claims

1. A high-power electromagnetic metasurface, characterized in that: It consists of a three-layer unit structure, which is upper unit, middle unit and lower unit from top to bottom; The upper unit includes: an upper metal layer and an upper dielectric substrate layer; the upper metal layer is located on the upper surface of the upper dielectric substrate layer and is composed of two back-to-back E-shaped metal strips and a first diode; The middle layer unit includes: a middle metal layer and a middle dielectric substrate layer; the middle metal layer is located on the upper surface of the middle dielectric substrate layer; the middle metal layer is composed of serpentine metal wires moving in the transverse direction; The lower layer unit includes: a lower metal layer and a lower dielectric substrate layer; the lower metal layer is located on the upper surface of the lower dielectric substrate layer and consists of two back-to-back Π-shaped metal strips and a second diode.

2. A high-power electromagnetic metasurface according to claim 1, characterized in that: The two back-to-back E-shaped metal strips face opposite directions and have a certain distance between the backs. The first diode is located at the symmetrical center of the upper unit to connect the two back-to-back E-shaped metal strips.

3. The high-power electromagnetic metasurface according to claim 1, characterized in that: Two ends of the serpentine metal line are located at the edges of the dielectric substrate layer.

4. The high-power electromagnetic metasurface according to claim 1, characterized in that: The two back-to-back Π-shaped metal strips face opposite directions and have a certain distance between the backs. The second diode is located at the symmetric center of the lower unit and connects the two back-to-back Π-shaped metal strips.

5. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The upper dielectric substrate layer, the middle dielectric substrate layer and the lower dielectric substrate layer are all made of dielectric materials with relatively small loss tangent.

6. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The arrangement period of the upper unit, middle unit and lower unit is P.

7. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The interval between the upper unit and the middle unit and the interval between the middle unit and the lower unit are both h0.

8. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The thickness of the upper dielectric substrate layer is h1; the distance between the back-to-back E-shaped metal strips is d1; the back width of the E-shaped metal strip is w1; the width of the upper and lower narrow branches of the E-shaped metal strip is l1; and the width of the middle wide branch is l2.

9. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The thickness of the dielectric substrate layer is h2; the line width of the serpentine metal line is w2.

10. A high-power electromagnetic metasurface according to any one of claims 1 to 4, characterized in that: The thickness of the lower dielectric substrate layer is h3; the distance between the backs of the two back-to-back Π-shaped metal strips is d2; the back width of the Π-shaped metal strip is w3; and the width of the two lateral branches of the Π-shaped metal strip is l3.

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