Quantum dot, optical member, electronic device, and method of manufacturing quantum dot

Abstract

Embodiments provide a quantum dot, an optical member, an electronic device, and a method of manufacturing the quantum dot. The quantum dot includes: a core including copper (Cu), a Group III element, and a Group VI element; and a first shell covering the core. A full width at half maximum (FWHM) of an emission wavelength spectrum of the core is equal to or less than about 55 nm.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2024-0041990 filed in the Korean Intellectual Property Office on March 27, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments relate to quantum dots, optical members including quantum dots, electronic devices including quantum dots, and methods of manufacturing quantum dots. Background Art

[0004] Quantum dots can be used as materials for performing various optical functions (e.g., light conversion and light emission) in optical components and various electronic devices. Quantum dots, which are semiconductor nanocrystals with quantum confinement effects, can have different energy band gaps by controlling the size and composition of the nanocrystals, and thus can emit light of various emission wavelengths.

[0005] The optical member including quantum dots may be in the form of a thin film, such as a film patterned for each sub-pixel. Such an optical member may be used as a color conversion member of a device including various light sources.

[0006] Quantum dots can be used for various purposes in various electronic devices. For example, quantum dots can be used as emitters. For example, quantum dots can be included in the emissive layer of a light-emitting device (including a pair of electrodes and an emissive layer) and can be used as an emitter.

[0007] To realize high-quality optical components and electronic devices, development is currently directed toward quantum dots that have excellent quantum yield (QY) and do not include cadmium, a toxic element.

[0008] It should be understood that this background technology section is intended, in part, to provide a useful context for understanding the technology. However, this background technology section may also include ideas, concepts, or realizations that were not part of what was known or understood by those skilled in the relevant art before the respective effective filing dates of the subject matter disclosed herein. Summary of the Invention

[0009] Embodiments provide novel quantum dots, optical members including quantum dots, electronic devices including quantum dots, and methods of manufacturing quantum dots.

[0010] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the disclosure.

[0011] According to an embodiment, a quantum dot may include:

[0012] a core comprising: copper (Cu); a Group III element; and a Group VI element; and

[0013] A first shell covers the core, wherein

[0014] The full width at half maximum (FWHM) of the emission wavelength spectrum of the core may be equal to or less than about 55 nm.

[0015] In an embodiment, the tail value of the emission wavelength spectrum of the core may be equal to or less than about 15 nm.

[0016] In an embodiment, the core may include Cu in an amount ranging from about 4 parts by weight to about 10 parts by weight based on a total of 100 parts by weight of the core.

[0017] In an embodiment, the Group III element may be aluminum (Al), gallium (Ga), indium (In), thallium (Tl), (Nh) or any combination thereof.

[0018] In an embodiment, the Group VI element may be oxygen (O), sulfur (S), selenium (Se), tellurium (Te), or any combination thereof.

[0019] In an embodiment, the core may include Cu, indium (In), gallium (Ga), and sulfur (S).

[0020] In an embodiment, the core may include: Cu in an amount ranging from about 4 parts by weight to about 10 parts by weight; In in an amount ranging from about 10 parts by weight to about 20 parts by weight; Ga in an amount ranging from about 30 parts by weight to about 40 parts by weight; and S in an amount ranging from about 40 parts by weight to about 50 parts by weight, based on a total of 100 parts by weight of the core.

[0021] In an embodiment, the first shell may include a II-VI semiconductor compound, a III-VI semiconductor compound, a III-V semiconductor compound, or any combination thereof.

[0022] In an embodiment, the II-VI semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0023] In an embodiment, the III-VI semiconductor compound may be GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, or any combination thereof.

[0024] In an embodiment, the III-V semiconductor compound may be GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or any combination thereof.

[0025] In an embodiment, the quantum dots may emit red light having a maximum emission wavelength in a range of about 600 nm to about 700 nm.

[0026] In an embodiment, the quantum yield (QY) of the quantum dots may be greater than 70% but not greater than about 98%.

[0027] According to an embodiment, an optical member may include the quantum dots.

[0028] According to an embodiment, an electronic device may include the quantum dot.

[0029] In an embodiment, the electronic device may further include: a light source; and a color conversion member arranged in an optical path of light emitted from the light source, wherein

[0030] The color conversion member may include the quantum dots.

[0031] According to an embodiment, a method of manufacturing quantum dots may include:

[0032] fabricating a core comprising copper (Cu), a Group III element, and a Group VI element; and

[0033] A first shell is produced covering the core, wherein

[0034] The full width at half maximum (FWHM) of the emission wavelength spectrum of the core may be equal to or less than about 55 nm.

[0035] In an embodiment, the manufacturing of the core may include manufacturing the core by using a composition for forming the core, and the composition may include a copper precursor, a precursor containing a Group III element, and a precursor containing a Group VI element.

[0036] In an embodiment, the manufacturing of the core may include heat treating the composition for forming the core at a temperature greater than 240°C but not greater than about 320°C.

[0037] In an embodiment, the manufacturing of the first shell may include manufacturing the first shell by using a composition for forming the first shell, and the composition may include a precursor containing a Group II element and a precursor containing a Group VI element.

[0038] It should be understood that the above embodiments have been described in a general and illustrative sense only and not for purposes of limitation, and the present disclosure is not limited to the embodiments described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and the principles of the present disclosure. The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0040] Figure 1 is a schematic cross-sectional view of a quantum dot according to an embodiment;

[0041] Figure 2 is a schematic cross-sectional view of an electronic device according to an embodiment;

[0042] Figure 3 is a schematic cross-sectional view of a light emitting device according to an embodiment;

[0043] Figure 4 is a schematic perspective view of an electronic device including a light emitting device according to an embodiment;

[0044] Figure 5 is a schematic perspective view of the exterior of a vehicle as an electronic device including a light emitting device according to an embodiment;

[0045] Figures 6A to 6C each being a schematic diagram of the interior of a vehicle according to an embodiment; and

[0046] Figure 7 is a graph of photoluminescence (PL) spectra of quantum dot cores according to Examples and Comparative Examples. DETAILED DESCRIPTION

[0047] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings that illustrate embodiments. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art.

[0048] In the drawings, the size, thickness, ratio, and dimensions of elements may be exaggerated for ease of description and clarity. Like reference numerals and reference characters refer to like elements throughout.

[0049] In the specification, it will be understood that when an element (or region, layer, component, etc.) is referred to as being “on”, “connected to” or “coupled to” another element, the element may be directly on, directly connected to or directly coupled to the other element, or one or more intervening elements may be present between the element and the other element. In a similar sense, when an element (or region, layer, component, etc.) is described as “overlying” another element, the element may directly overly the other element, or one or more intervening elements may be present between the element and the other element.

[0050] In the specification, when an element is “directly on,” “directly connected to,” or “directly coupled to” another element, there are no intervening elements. For example, “directly on” may mean that two layers or elements are provided without an additional element, such as an adhesive element, between the two layers or elements.

[0051] In the specification, expressions used in the singular form such as “a”, “an” and “the” are intended to include the plural form as well, unless the context clearly indicates otherwise.

[0052] In the specification, the term "and / or" includes any and all combinations of one or more of the associated listed items. For example, "A and / or B" can be understood to mean "A, B, or A and B." The terms "and" and "or" can be used in a conjunction or disjunction sense and can be understood to be equivalent to "and / or."

[0053] In the specification and claims, for purposes of its meaning and interpretation, the term "at least one of" is intended to include the meaning of "at least one selected from the group consisting of." For example, "at least one of A, B, and C" may be understood to mean only A, only B, only C, or any combination of two or more of A, B, and C (such as ABC, AC, BC, or AB). When the term "at least one of" follows a list of elements, it modifies the entire list, not the individual elements in the list.

[0054] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, without departing from the teachings of the present disclosure, a first element may be referred to as a second element. Similarly, without departing from the scope of the present disclosure, a second element may be referred to as a first element.

[0055] For ease of description, spatially relative terms such as "below," "under," "down," "above," or "on" may be used herein to describe the relationship between one element or component and another element or component as shown in the figures. It will be understood that, in addition to the orientations depicted in the figures, spatially relative terms are intended to cover different orientations of the device in use or operation. For example, where the device shown in the figures is flipped, a device positioned "below" or "beneath" another device may be placed "above" another device. Thus, the illustrative term "below" may include both a lower position and an upper position. The device may also be oriented in other directions, and thus the spatially relative terms may be interpreted differently depending on the orientation.

[0056] As used herein, the terms "about" or "approximately" are inclusive of the stated value and mean within an acceptable range of deviation from the stated value as determined by one of ordinary skill in the art, taking into account the measurements in question and errors associated with the measurement of the stated quantity (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±20%, ±10%, or ±5% of the stated value.

[0057] It should be understood that the terms “comprises, comprising,” “includes, including,” “have, having,” and “contains, containing,” etc. are intended to specify the presence of stated features, integers, steps, operations, elements (elements), components, or combinations thereof in the present disclosure, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements (elements), components, or combinations thereof.

[0058] The term "Group I elements" as used herein may include Group IA elements and Group IB elements in the International Union of Pure and Applied Chemistry (IUPAC) periodic table; and Group I elements may include, for example, silver (Ag), copper (Cu), and the like.

[0059] The term "Group II elements" as used herein may include Group IIA elements and Group IIB elements in the IUPAC periodic table; and Group II elements may include, for example, magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), etc.

[0060] The term "Group III elements" as used herein may include Group IIIA elements and Group IIIB elements in the IUPAC periodic table; and Group III elements may include, for example, aluminum (Al), gallium (Ga), indium (In), thallium (Tl), (Nh) etc.

[0061] The term "Group VI elements" as used herein may include Group VIA elements and Group VIB elements in the IUPAC periodic table; and Group VI elements may include, for example, oxygen (O), sulfur (S), selenium (Se), tellurium (Te), and the like.

[0062] As used herein, the terms "quantum yield" (QY) and "luminous efficiency" may be used with substantially the same meaning.

[0063] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that, unless expressly defined in the specification, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense.

[0064] In the following, reference will be made to Figure 1 The quantum dot 100 according to the embodiment and the method of manufacturing the quantum dot 100 according to the embodiment are described.

[0065] [ Figure 1 Description]

[0066] Figure 1 1 is a schematic cross-sectional view of a quantum dot 100 according to an embodiment of the present invention. The quantum dot 100 may include a core 10 and a first shell 20.

[0067] [Quantum Dot 100]

[0068] Figure 1 The quantum dot 100 may include:

[0069] a core 10 including copper (Cu), a Group III element, and a Group VI element; and

[0070] The first shell 20 covers the core, wherein

[0071] The full width at half maximum (FWHM) of the emission wavelength spectrum of the core may be equal to or less than about 55 nm.

[0072] According to an embodiment, the core 10 may include a Group I-III-VI semiconductor compound.

[0073] According to an embodiment, the full width at half maximum of the emission wavelength spectrum of the core 10 may be equal to or less than about 55 nm. For example, the FWHM of the emission wavelength spectrum of the core 10 may be at least about 1 nm but not more than about 55 nm, at least about 2 nm but not more than about 55 nm, at least about 3 nm but not more than about 55 nm, at least about 5 nm but not more than about 55 nm, at least about 10 nm but not more than about 55 nm, at least about 15 nm but not more than about 55 nm, at least about 20 nm but not more than about 55 nm, at least about 25 nm but not more than about 55 nm, at least about 30 nm but not more than about 55 nm, at least about 40 nm but not more than about 55 nm, at least about 45 nm but not more than about 55 nm, at least about 46 nm but not more than about 55 nm, at least about 47 nm but not more than about 55 nm, at least about 48 nm but not more than about 55 nm, at least about 49 nm but not more than about 55 nm, at least about 50 nm but not more than about 55 nm, at least about 51 nm but not more than about 55 nm, at least about 52 nm but not more than about 55 nm, at least about 53 nm but not more than about 55 nm, at least about 54 nm but not more than about 55 nm, at least about 45 nm but not more than about 54 nm, at least about 46 nm but not more than about 54 nm, at least about 47 nm but not more than about 54 nm, at least about 48 nm but not more than about 54 nm, at least about 59 nm but not more than about 55 nm, at least about 60 nm but not more than about 61 nm, at least about 61 nm but not more than about 62 nm, at least about 63 nm but not more than about 64 nm, at least about 64 nm but not more than about 65 nm, at least about 65 nm but not more than about 66 nm, at least about 67 nm but not more than about 68 nm, at least about 69 nm but not more than about 70 nm, at least about 70 nm but not more than about 71 nm, at least about 71 nm but not more than about 72 nm, at least about 72 nm but not more than about 73 nm, at least about 73 nm but not more than about 74 nm, at least about 74 nm but not more than about 75 nm, at least about at least about 49 nm but not more than about 54 nm, at least about 50 nm but not more than about 54 nm, at least about 51 nm but not more than about 54 nm, at least about 52 nm but not more than about 54 nm, at least about 53 nm but not more than about 54 nm, at least about 45 nm but not more than about 53 nm, at least about 46 nm but not more than about 53 nm, at least about 47 nm but not more than about 53 nm, at least about 48 nm but not more than about 53 nm, at least about 49 nm but not more than about 53 nm, at least about 50 nm but not more than about 53 nm, at least about 51 nm but not more than about 53 nm, at least about 52 nm but not more than about 54 nm, greater than about 53 nm, at least about 45 nm but not greater than about 52 nm, at least about 46 nm but not greater than about 52 nm, at least about 47 nm but not greater than about 52 nm, at least about 48 nm but not greater than about 52 nm, at least about 49 nm but not greater than about 52 nm, at least about 50 nm but not greater than about 52 nm, at least about 51 nm but not greater than about 52 nm, at least about 45 nm but not greater than about 51 nm, at least about 46 nm but not greater than about 51 nm, at least about 47 nm but not greater than about 51 nm, at least about 48 nm but not greater than about 51 nm, at least about 49 nm but not greater than about 51 nm,At least about 50 nm but not more than about 51 nm, at least about 45 nm but not more than about 50 nm, at least about 46 nm but not more than about 50 nm, at least about 47 nm but not more than about 50 nm, at least about 48 nm but not more than about 50 nm, at least about 49 nm but not more than about 50 nm, at least about 45 nm but not more than about 49 nm, at least about 46 nm but not more than about 49 nm, at least about 47 nm but not more than about 49 nm, at least about 48 nm but not more than about 49 nm, at least about 45 nm but not more than about 48 nm, at least about 46 nm but not more than about 48 nm, at least about 47 nm but not more than about 48 nm, at least about 45 nm but not more than about 47 nm, at least about 46 nm but not more than about 47 nm, or at least about 45 nm but not more than about 46 nm. When the full width at half maximum of the emission wavelength spectrum of the quantum dot core 10 satisfies any of the above ranges, color purity and color reproducibility can be excellent, wide viewing angle can be improved, and quantum yield (QY) can be improved.

[0074] According to an embodiment, a tail value of the emission wavelength spectrum of the core 10 may be equal to or less than about 15 nm.

[0075] The tail value of the core 10 can be expressed as the absolute value of the value of [right wavelength width (R) - left wavelength width (L)] at 1 / 10 of the peak value of the maximum emission wavelength of the core. For example, the tail value can be the absolute value of the value of [right half width - left half width] at 1 / 10 of the peak value of the maximum emission wavelength.

[0076] In addition to the full width at half maximum, the tail value can also be a characteristic of quantum dots and can be a numerical value representing particle uniformity and trap emission. As the tail value decreases, particle uniformity increases and the degree of trap emission decreases.

[0077] Since the tail region represented by the tail value may not contribute to the final light-emitting device efficiency later, even if each quantum dot has the same quantum yield, when the tail value is high, the region that does not contribute to the final light-emitting device efficiency increases, and thus the efficiency and brightness of the light-emitting device may decrease. Therefore, a low tail value can enable the provision of excellent quantum dots and, therefore, excellent devices.

[0078] The tail value of the emission wavelength spectrum of the core 10 according to the embodiment may be equal to or less than about 15 nm. For example, the tail value of the emission wavelength spectrum of the core 10 may be about 0 nm to about 15 nm, about 0.1 nm to about 15 nm, about 1 nm to about 15 nm, about 2 nm to about 15 nm, about 3 nm to about 15 nm, about 4 nm to about 15 nm, about 5 nm to about 15 nm, about 6 nm to about 15 nm, about 7 nm to about 15 nm, about 8 nm to about 15 nm, about 9 nm to about 15 nm, about 10 nm to about 15 nm, about 11 nm to about 15 nm, about 12 nm to about 15 nm, about 13 nm to about 15 nm, about 15 nm to about 15 nm, about 16 nm to about 15 nm, about 17 nm to about 15 nm, about 18 nm to about 15 nm, about 19 nm to about 15 nm, about 20 nm to about 15 nm, about 21 nm to about 15 nm, about 22 nm to about 15 nm, about 23 nm to about 15 nm, about 24 nm to about 15 nm, about 25 nm to about 15 nm, about 26 nm to about 15 nm, about 27 nm to about 15 nm, about 28 nm to about 15 nm, about 29 nm to about 15 nm, about 30 nm to about 15 nm, about 31 nm to about 15 nm, about 32 nm to about 15 nm, about 33 nm to about 15 nm, about 34 nm to about 15 nm, about 35 nm to about 15 nm, about 36 nm to about 15 nm, about 37 nm to about 15 nm, about 38 nm to about 15 nm, about 15 nm, about 13 nm to about 15 nm, about 14 nm to about 15 nm, about 0 nm to about 14 nm, about 0.1 nm to about 14 nm, about 1 nm to about 14 nm, about 2 nm to about 14 nm, about 3 nm to about 14 nm, about 4 nm to about 14 nm, about 5 nm to about 14 nm, about 6 nm to about 14 nm, about 7 nm to about 14 nm, about 8 nm to about 14 nm, about 9 nm to about 14 nm, about 10 nm to about 14 nm, about 11 nm to about 14 nm nm, about 12 nm to about 14 nm, about 13 nm to about 14 nm, about 0 nm to about 13 nm, about 0.1 nm to about 13 nm, about 1 nm to about 13 nm, about 2 nm to about 13 nm, about 3 nm to about 13 nm, about 4 nm to about 13 nm, about 5 nm to about 13 nm, about 6 nm to about 13 nm, about 7 nm to about 13 nm, about 8 nm to about 13 nm, about 9 nm to about 13 nm, about 10 nm to 13 nm, about 11 nm to about 13 ... about 12 nm to about 13 nm, about 0 nm to about 12 nm, about 0.1 nm to about 12 nm, about 1 nm to about 12 nm, about 2 nm to about 12 nm, about 3 nm to about 12 nm, about 4 nm to about 12 nm, about 5 nm to about 12 nm, about 6 nm to about 12 nm, about 7 nm to about 12 nm, about 8 nm to about 12 nm, about 9 nm to about 12 nm, about 10 nm to about 12 nm, about 11 nm to about 12 nm, about 0 nm to about 11 nm, about 0.The present invention relates to a method for producing a nanostructured carbon fiber having a nanostructured carbon fiber and a nanostructured carbon fiber, wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber, and wherein the nanostructured carbon fiber has a nanostructured carbon fiber and a nanostructured carbon fiber,

[0079] According to an embodiment, the core 10 may include copper (Cu) in an amount ranging from about 4 parts by weight to about 10 parts by weight based on a total of 100 parts by weight of the core 10 .

[0080] For example, the core 10 may include copper (Cu) in an amount ranging from about 4 to about 10 parts by weight, about 4 to about 9 parts by weight, about 4 to about 8 parts by weight, about 4 to about 7 parts by weight, about 4 to about 6 parts by weight, about 4 to about 5 parts by weight, about 5 to about 10 parts by weight, about 5 to about 9 parts by weight, about 5 to about 8 parts by weight, about 5 to about 7 parts by weight, about 5 to about 6 parts by weight, about 6 to about 10 parts by weight, about 6 to about 9 parts by weight, about 6 to about 8 parts by weight, about 6 to about 7 parts by weight, about 7 to about 10 parts by weight, about 7 to about 9 parts by weight, about 7 to about 8 parts by weight, about 8 to about 10 parts by weight, about 8 to about 9 parts by weight, or about 9 to about 10 parts by weight, based on 100 parts by weight of the core 10 in total.

[0081] According to an embodiment, the core 10 may include the Group III element in an amount ranging from about 10 parts by weight to about 50 parts by weight based on 100 parts by weight in total of the core 10 .

[0082] For example, when the core 10 includes two or more Group III elements, the total amount of the two or more Group III elements may be in a range of about 10 parts by weight to about 50 parts by weight based on a total of 100 parts by weight of the core 10 .

[0083] According to an embodiment, the core 10 may include the Group VI element in an amount ranging from about 40 parts by weight to about 60 parts by weight based on 100 parts by weight in total of the core 10 .

[0084] For example, when the core 10 includes two or more Group VI elements, the total amount of the two or more Group VI elements may be in a range of about 40 parts by weight to about 60 parts by weight based on a total of 100 parts by weight of the core 10 .

[0085] According to an embodiment, the group III element may be aluminum (Al), gallium (Ga), indium (In), thallium (Tl), (Nh) or any combination thereof.

[0086] For example, the Group III element included in the core 10 may be: aluminum (Al), gallium (Ga), indium (In), or any combination thereof; gallium (Ga), indium (In), or any combination thereof; or gallium (Ga) and indium (In).

[0087] For example, in the case where the Group III elements included in the core 10 are gallium (Ga) and indium (In), the amount of gallium may be in the range of about 30 parts by weight to about 40 parts by weight based on a total of 100 parts by weight of the core 10, and the amount of indium may be in the range of about 10 parts by weight to about 20 parts by weight based on a total of 100 parts by weight of the core 10.

[0088] According to an embodiment, the Group VI element may be oxygen (O), sulfur (S), selenium (Se), tellurium (Te), or any combination thereof.

[0089] For example, the Group VI element included in the core 10 may be sulfur (S), selenium (Se), or any combination thereof.

[0090] According to an embodiment, the core 10 may include copper (Cu), indium (In), gallium (Ga), and sulfur (S).

[0091] For example, the core 10 may be a copper indium gallium sulfide (CIGS) quantum dot core composed of copper (Cu), indium (In), gallium (Ga), and sulfur (S).

[0092] According to an embodiment, the core 10 may include: copper (Cu) in an amount ranging from about 4 parts by weight to about 10 parts by weight; indium (In) in an amount ranging from about 10 parts by weight to about 20 parts by weight; gallium (Ga) in an amount ranging from about 30 parts by weight to about 40 parts by weight; and sulfur (S) in an amount ranging from about 40 parts by weight to about 50 parts by weight, based on a total of 100 parts by weight of the core 10.

[0093] According to an embodiment, the first shell 20 may include a Group II-VI semiconductor compound, a Group III-VI semiconductor compound, a Group III-V semiconductor compound, or any combination thereof.

[0094] According to an embodiment, the quantum dot 100 may further include a second shell (not shown) covering the first shell 20 .

[0095] According to an embodiment, the second shell (not shown) may include a II-VI semiconductor compound, a III-VI semiconductor compound, a III-V semiconductor compound, or any combination thereof.

[0096] According to an embodiment, the II-VI semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0097] According to an embodiment, the III-VI semiconductor compound may be GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, or any combination thereof.

[0098] According to an embodiment, the III-V semiconductor compound may be GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

[0099] According to an embodiment, the quantum dot may further include an intershell layer (not shown) between the first shell 20 and the second shell (not shown), wherein the intershell layer may include the same material as that of the first shell and the same material as that of the second shell (not shown).

[0100] According to an embodiment, in the core 10 , Cu may be present in a uniform concentration or in a non-uniform concentration.

[0101] According to an embodiment, in the core 10 , the group III element may be present in a uniform concentration or in a non-uniform concentration.

[0102] According to an embodiment, in the core 10 , the Group VI element may be present in a uniform concentration or in a non-uniform concentration.

[0103] According to the embodiment, in the first shell 20 , the constituent elements of the first shell 20 may be present at a uniform concentration or at a non-uniform concentration.

[0104] According to embodiments, in the second shell (not shown), constituent elements of the second shell may be present at a uniform concentration or at a non-uniform concentration.

[0105] According to an embodiment, concentrations of elements included in the first shell 20 and the second shell (not shown) may form a concentration gradient according to a distance from the core.

[0106] According to an embodiment, the radius L1 of the core 10 of the quantum dot 100 may be equal to or greater than about 4 nm. For example, the radius L1 of the core 10 may be in the range of about 4 nm to about 8 nm, about 4 nm to about 7.5 nm, about 4 nm to about 7 nm, or about 4 nm to about 6 nm.

[0107] According to an embodiment, the thickness L2 of the first shell 20 of the quantum dot 100 may be in the range of about 0.5 nm to about 3 nm. For example, the thickness L2 of the first shell 20 may be in the range of about 0.5 nm to about 3 nm, about 0.5 nm to about 2 nm, or about 0.5 nm to about 1 nm.

[0108] According to an embodiment, the thickness of the second shell (not shown) of the quantum dot 100 may be in the range of about 0.5 nm to about 3 nm. For example, the thickness of the second shell (not shown) may be in the range of about 0.5 nm to about 3 nm, about 1 nm to about 3 nm, or about 2 nm to about 3 nm.

[0109] According to an embodiment, the sum of the thickness L2 of the first shell 20 and the thickness of the second shell (not shown) may be in the range of about 1 nm to about 4 nm.

[0110] For example, the sum of the thickness L2 of the first shell 20 and the thickness of the second shell (not shown) may be in the range of about 1 nm to about 4 nm or about 1 nm to about 3 nm.

[0111] The term “radius L1 of the core 10 ” may refer to a distance from the center of the quantum dot to an interface between the core 10 and the first shell 20 .

[0112] The term "thickness L2 of the first shell" may refer to the distance from the interface between the core 10 and the first shell 20 to the surface of the first shell 20. For example, the "thickness L2 of the first shell" may correspond to a value obtained by subtracting the radius L1 of the core 10 from the distance L3 (from the center of the quantum dot to the surface of the first shell 20).

[0113] According to an embodiment, the cation content of the first shell 20 may be in a range of about 10 parts by weight to about 50 parts by weight based on 100 parts by weight of the first shell 20 in total.

[0114] According to embodiments, the quantum dot 100 may be in the form of spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, or nanoplates.

[0115] According to an embodiment, the quantum dot 100 may be spherical.

[0116] According to an embodiment, the maximum emission wavelength of the photoluminescence (PL) spectrum of the quantum dot 100 may be in the range of about 500 nm to about 700 nm. For example, the maximum emission wavelength of the PL spectrum of the quantum dot 100 may be in the range of about 600 nm to about 690 nm, about 610 nm to about 680 nm, or about 615 nm to about 670 nm.

[0117] According to embodiments, the quantum dot 100 may emit blue light, green light, or red light. For example, the quantum dot 100 may emit red light.

[0118] According to an embodiment, the quantum dot 100 may emit red light having a maximum emission wavelength in the range of about 600 nm to about 700 nm.

[0119] According to embodiments, the quantum yield (QY) of quantum dot 100 may be greater than about 70% but less than about 98%. For example, the QY of quantum dot 100 may be at least about 75% but less than about 97%, or at least about 85% but less than about 95%.

[0120] According to an embodiment, the quantum dot 100 may have a FWHM of an emission wavelength spectrum equal to or less than about 60 nm. For example, the quantum dot 100 may have a FWHM of an emission wavelength spectrum equal to or less than about 58 nm. For example, the quantum dot 100 may have a FWHM of an emission wavelength spectrum equal to or less than about 55 nm. Within any of these ranges, color purity or color reproducibility may be improved. Light emitted by the quantum dot 100 may be emitted in all directions, so that a wide viewing angle may be improved.

[0121] In the specification, a "quantum dot" may be a crystal of a semiconductor compound and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. The quantum dot 100 may emit light of various emission wavelengths by adjusting the ratio of elements in the quantum dot compound.

[0122] The diameter of the quantum dot 100 may be, for example, in the range of about 1 nm to about 10 nm.

[0123] According to an embodiment, the quantum dot 100 may be manufactured by a method of manufacturing a quantum dot described below.

[0124] The quantum dots 100 may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any process similar to these processes.

[0125] The wet chemical process involves mixing a precursor material with an organic solvent and growing quantum dot particle crystals. As the crystals grow, the organic solvent naturally acts as a dispersant that coordinates to the surface of the quantum dot crystals and controls their growth. This allows for controlled growth of quantum dot particles using a process that is less expensive and easier to perform than vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0126] In addition to the II-VI semiconductor compounds described above, the quantum dot 100 may also include: other II-VI semiconductor compounds; III-V semiconductor compounds; III-VI semiconductor compounds; I-III-VI semiconductor compounds; IV-VI semiconductor compounds; Group IV elements or compounds; or any combination thereof.

[0127] Examples of II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZ nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; and any combination thereof.

[0128] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds such as GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; and any combination thereof. In embodiments, the III-V semiconductor compounds may further include Group II elements. Examples of the Group III-V semiconductor compound further including a Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0129] Examples of III-VI semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; and any combination thereof.

[0130] Examples of Group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2, etc.; quaternary compounds such as AgInGaS2, AgInGaSe2, etc.; and any combination thereof.

[0131] Examples of IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; and any combination thereof.

[0132] Examples of Group IV elements or compounds may include: single element materials such as Si, Ge, etc.; binary compounds such as SiC, SiGe, etc.; and any combination thereof.

[0133] Each element included in a compound such as a binary compound, a ternary compound, or a quaternary compound may be present in the particle at a uniform concentration or at a non-uniform concentration. The formula of the quantum dot compound as described above may refer to the type of element included in each compound, and the ratio of the elements in these compounds may vary. For example, AgInGaS2 may refer to AgInGaS2. x Ga 1-x S2 (where x is a real number between 0 and 1).

[0134] The first shell 20 of the quantum dot 100 can serve as a protective layer to prevent chemical degeneration of the core to maintain semiconductor properties, and / or can serve as a charging layer to impart electrophoretic properties to the quantum dot 100. The first shell 20 can be a single layer or a multilayer. The interface between the core 10 and the first shell 20 can have a concentration gradient in which the concentration of the element present in the first shell 20 decreases toward the core 10.

[0135] The first shell 20 of the quantum dot 100 may further include a metal oxide, a metalloid oxide, a non-metal oxide, a semiconductor compound, or any combination thereof. Examples of the metal oxide, metalloid oxide, or non-metal oxide may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; or any combination thereof.

[0136] As described herein, examples of semiconductor compounds may include: II-VI semiconductor compounds; III-V semiconductor compounds; III-VI semiconductor compounds; I-III-VI semiconductor compounds; IV-VI semiconductor compounds; or any combination thereof. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS2, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0137] Because the energy band gap can be adjusted by controlling the size of quantum dots 100, light with various wavelength bands can be obtained from the quantum dot emission layer. Therefore, by using quantum dots 100 of different sizes, a light-emitting device emitting light of various wavelengths can be realized. For example, the size of quantum dots 100 or the ratio of elements in the quantum dot compound can be adjusted to emit red light, green light, and / or blue light. Through such adjustments, quantum dots 100 can be configured to emit white light through a combination of light of various colors.

[0138] [Method for producing quantum dots]

[0139] According to an embodiment, a method of manufacturing quantum dots may include: manufacturing a core including copper (Cu), a group III element, and a group VI element; and manufacturing a first shell covering the core, wherein the full width at half maximum (FWHM) of an emission wavelength spectrum of the core may be equal to or less than approximately 55 nm.

[0140] Regarding the method of manufacturing quantum dots according to the embodiment, the quantum dots described herein may be the quantum dots described above (eg, Figure 1 Quantum dots 100 in.

[0141] According to an embodiment, the manufacturing of the core may include manufacturing the core by using a composition for forming the core, wherein the composition includes a copper precursor, a precursor containing a Group III element, and a precursor containing a Group VI element.

[0142] According to an embodiment, the fabrication of the core may include heat-treating the composition for forming the core at a temperature higher than 240°C but not higher than about 320°C.

[0143] The composition for forming the core may include: a first composition for forming the core, the first composition for forming the core including a copper precursor and a precursor containing a Group III element; a second composition for forming the core, the second composition for forming the core including the first composition for forming the core and a precursor containing a Group VI element; and a third composition for forming the core, the third composition for forming the core including the second composition for forming the core, a copper precursor, and a precursor containing a Group III element.

[0144] According to an embodiment, the manufacture of the core may include:

[0145] subjecting the first core-forming composition to a reaction at a low temperature;

[0146] forming a second composition for forming a core by adding a precursor containing a Group VI element to the first composition for forming a core that has been subjected to a reaction;

[0147] heat-treating the second core-forming composition at a temperature equal to or lower than about 240° C.;

[0148] forming a third composition for forming a core by adding a copper precursor and a Group III element-containing precursor to the heat-treated second composition for forming a core; and

[0149] heat treating the third composition for forming a core, wherein

[0150] The heat treatment of the third composition for forming the core may be performed at a temperature higher than 240°C but not higher than about 320°C.

[0151] For example, the heat treatment of the third composition for forming the core may be performed at a temperature higher than 240°C but not higher than about 320°C, a temperature higher than 240°C but not higher than about 310°C, a temperature higher than 240°C but not higher than about 300°C, a temperature higher than 240°C but not higher than about 290°C, a temperature higher than 240°C but not higher than about 280°C, a temperature higher than 240°C but not higher than about 270°C, a temperature higher than 240°C but not higher than about 260°C, a temperature higher than 240°C but not higher than about 250°C, a temperature of at least about 250°C but not higher than about 320°C, or a temperature higher than about 250°C but not higher than about 320°C. ℃, at a temperature of at least about 250℃ but not more than about 310℃, at a temperature of at least about 250℃ but not more than about 300℃, at a temperature of at least about 250℃ but not more than about 290℃, at a temperature of at least about 250℃ but not more than about 280℃, at a temperature of at least about 250℃ but not more than about 270℃, at a temperature of at least about 250℃ but not more than about 260℃, at a temperature of at least about 260℃ but not more than about 320℃, at a temperature of at least about 260℃ but not more than about 310℃, at a temperature of at least about 260℃ but not more than about 300℃ , at a temperature of at least about 260°C but not more than about 290°C, at a temperature of at least about 260°C but not more than about 280°C, at a temperature of at least about 260°C but not more than about 270°C, at a temperature of at least about 270°C but not more than about 320°C, at a temperature of at least about 270°C but not more than about 310°C, at a temperature of at least about 270°C but not more than about 300°C, at a temperature of at least about 270°C but not more than about 290°C, at a temperature of at least about 270°C but not more than about 280°C, at a temperature of at least about 280°C but not more than about 320°C, to The present invention is performed at a temperature of at least about 280°C but not higher than about 310°C, at a temperature of at least about 280°C but not higher than about 300°C, at a temperature of at least about 280°C but not higher than about 290°C, at a temperature of at least about 290°C but not higher than about 320°C, at least about 290°C but not higher than about 310°C, at least about 290°C but not higher than about 300°C, at least about 300°C but not higher than about 320°C, at least about 300°C but not higher than about 310°C, or at least about 310°C but not higher than about 320°C.

[0152] By the method for manufacturing quantum dots according to an embodiment including heat treatment of the third composition for forming the core within any temperature range within the above temperature ranges, the core can be uniformly formed, the quantum dots can have ensured particle uniformity, and the composition of the quantum dots can be appropriately adjusted to manufacture quantum dots having a narrow full width at half maximum and a low tail value.

[0153] According to an embodiment, the low temperature at which the first composition for forming the core undergoes a reaction may be equal to or lower than about 150° C. For example, the low temperature at which the first composition for forming the core undergoes a reaction may be in the range of about 100° C. to about 150° C., in the range of about 110° C. to about 140° C., in the range of about 110° C. to about 130° C., or in the range of about 110° C. to about 125° C.

[0154] According to an embodiment, the manufacturing of the first shell may include manufacturing the first shell by using a composition for forming the first shell, wherein the composition may include a precursor containing a Group II element and a precursor containing a Group VI element.

[0155] According to an embodiment, the manufacturing of the first shell may further include heat-treating the composition for forming the first shell at a temperature higher than 240°C but not higher than about 320°C.

[0156] For example, the heat treatment of the composition for forming the first shell may be performed at a temperature higher than 240°C but not higher than about 320°C, a temperature higher than 240°C but not higher than about 310°C, a temperature higher than 240°C but not higher than about 300°C, a temperature higher than 240°C but not higher than about 290°C, a temperature higher than 240°C but not higher than about 280°C, a temperature higher than 240°C but not higher than about 270°C, a temperature higher than 240°C but not higher than about 260°C, a temperature higher than 240°C but not higher than about 250°C, a temperature of at least about 250°C but not higher than about 320°C, or a temperature higher than about 250°C but not higher than about 320°C. ℃, at a temperature of at least about 250℃ but not more than about 310℃, at a temperature of at least about 250℃ but not more than about 300℃, at a temperature of at least about 250℃ but not more than about 290℃, at a temperature of at least about 250℃ but not more than about 280℃, at a temperature of at least about 250℃ but not more than about 270℃, at a temperature of at least about 250℃ but not more than about 260℃, at a temperature of at least about 260℃ but not more than about 320℃, at a temperature of at least about 260℃ but not more than about 310℃, at a temperature of at least about 260℃ but not more than about 300℃ , at a temperature of at least about 260°C but not more than about 290°C, at a temperature of at least about 260°C but not more than about 280°C, at a temperature of at least about 260°C but not more than about 270°C, at a temperature of at least about 270°C but not more than about 320°C, at a temperature of at least about 270°C but not more than about 310°C, at a temperature of at least about 270°C but not more than about 300°C, at a temperature of at least about 270°C but not more than about 290°C, at a temperature of at least about 270°C but not more than about 280°C, at a temperature of at least about 280°C but not more than about 320°C, to The present invention is performed at a temperature of at least about 280°C but not higher than about 310°C, at a temperature of at least about 280°C but not higher than about 300°C, at a temperature of at least about 280°C but not higher than about 290°C, at a temperature of at least about 290°C but not higher than about 320°C, at least about 290°C but not higher than about 310°C, at least about 290°C but not higher than about 300°C, at least about 300°C but not higher than about 320°C, at least about 300°C but not higher than about 310°C, or at least about 310°C but not higher than about 320°C.

[0157] According to an embodiment, the method of manufacturing a quantum dot may further include forming a second shell by using the composition for forming the second shell after the manufacturing of the first shell.

[0158] For example, the composition for forming the second shell may include a precursor containing a Group II element and a precursor containing a Group VI element.

[0159] According to embodiments, the Group III element-containing precursor included in the first composition for forming the core and the Group III element-containing precursor added when manufacturing the third composition for forming the core may be the same as or different from each other.

[0160] According to an embodiment, the precursor containing a Group VI element added when manufacturing the second composition for forming the core and the precursor containing a Group VI element included in the composition for forming the first shell may be the same as or different from each other.

[0161] According to embodiments, the Group II element-containing precursor included in the composition for forming the first shell and the Group II element-containing precursor included in the composition for forming the second shell may be the same as or different from each other.

[0162] According to embodiments, the precursor containing a Group VI element included in the composition for forming the first shell and the precursor containing a Group VI element included in the composition for forming the second shell may be the same as or different from each other.

[0163] According to an embodiment, the copper precursor may be copper or a copper compound.

[0164] For example, the copper precursor can be copper iodide, copper bromide, copper chloride, copper acetylacetonate, or any combination thereof.

[0165] According to an embodiment, the Group II element-containing precursor may be: zinc or a zinc compound; cadmium or a cadmium compound; or mercury or a mercury compound.

[0166] For example, the precursor containing a Group II element can be zinc acetate, dimethyl zinc, diethyl zinc, zinc carboxylate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, cadmium oxide, dimethyl cadmium, diethyl cadmium, cadmium carbonate, cadmium acetate dihydrate, cadmium acetylacetonate, cadmium fluoride, cadmium chloride, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, cadmium nitrate, cadmium sulfate, cadmium carboxylate, mercuric iodide, mercuric bromide, mercuric fluoride, mercuric cyanide, mercuric nitrate, mercuric perchlorate, mercuric sulfate, mercuric oxide, mercury carbonate or mercury carboxylate, etc.

[0167] According to an embodiment, the precursor containing a Group III element may be: aluminum or an aluminum compound; gallium or a gallium compound; indium or an indium compound; or thallium or a thallium compound.

[0168] For example, the precursor containing a Group III element can be aluminum phosphate, aluminum acetylacetonate, aluminum chloride, aluminum fluoride, aluminum oxide, aluminum nitrate, aluminum sulfate, gallium acetylacetonate, gallium chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium acetate, indium chloride, indium oxide, indium nitrate, indium sulfate, or indium carboxylate, etc.

[0169] According to an embodiment, the precursor containing a Group VI element may be: sulfur or a sulfur compound; selenium or a selenium compound; or tellurium or a tellurium compound.

[0170] For example, the precursor containing a Group VI element can be sulfur, a sulfur-containing oleylamine, a phosphine sulfide, a trialkylphosphine sulfide, a trialkenylphosphine sulfide, an alkylamino sulfide, an alkenylamino sulfide, an alkylthiol, selenium, a trialkylphosphine selenide, a trialkenylphosphine selenide, an alkylamino selenide, an alkenylamino selenide, a trialkylphosphine telluride, a trialkenylphosphine telluride, an alkylamino telluride, or an alkenylamino telluride, etc.

[0171] According to an embodiment, the precursor containing a Group III element when forming the core may be gallium chloride, indium chloride, or any combination thereof.

[0172] According to an embodiment, the precursor containing a Group VI element when forming the core may be sulfur-containing oleylamine.

[0173] According to an embodiment, the precursor containing a Group II element when forming the first shell may be zinc acetate (Zn(OA) 2 ), and the precursor containing a Group VI element when forming the first shell may be trioctylphosphine sulfide (TOP-S).

[0174] According to an embodiment, the composition for forming the core and the composition for forming the first shell may each further include a solvent.

[0175] According to an embodiment, the solvent may be an organic solvent. For example, the solvent may include 1-octadecene (ODE), trioctylamine (TOA), trioctylphosphine (TOP), oleylamine, or any combination thereof.

[0176] According to an embodiment, the manufacturing of the core may include heat-treating the composition for forming the core at a temperature higher than 240° C. but not higher than about 320° C. to induce a cation exchange reaction.

[0177] According to an embodiment, the method of manufacturing quantum dots may further include treating a surface of the first shell or the second shell with an organic ligand or a metal halide.

[0178] According to an embodiment, the organic ligand may include C4-C 30 fatty acid.

[0179] For example, the organic ligand may include palmitic acid, palmitoleic acid, stearic acid, oleic acid, trioctylphosphine, trioctylphosphine oxide, oleylamine, octylamine, trioctylamine, hexadecylamine, octylmercaptan, dodecylmercaptan, hexylphosphonic acid, tetradecylphosphonic acid, or octylphosphonic acid, among others.

[0180] The method of manufacturing quantum dots according to an embodiment may include manufacturing a core by using a composition for forming a core and heat-treating the composition at a temperature higher than 240° C. but lower than about 320° C., so that the core may have a suitable composition ratio, so that the core may be uniformly synthesized, thereby achieving a narrow full width at half maximum and a low tail value, and so that a shell on the core may be uniformly formed, thereby improving chemical stability and PL characteristics.

[0181] Therefore, the quantum dots according to the embodiment may achieve excellent quantum yield (QY) based on a narrow full width at half maximum and a low tail value, thereby being able to provide quantum dots having improved chemical stability and PL characteristics.

[0182] Therefore, high-quality optical components and electronic devices can be provided by using quantum dots.

[0183] [Electronic equipment]

[0184] Quantum dots can be used in various electronic devices.Thus, according to another embodiment, an electronic device may include quantum dots.

[0185] According to an embodiment, an electronic device may include: a light source; and a color conversion member disposed in an optical path of light emitted from the light source, wherein the color conversion member may include quantum dots.

[0186] [ Figure 2 Description]

[0187] Figure 2 is a schematic cross-sectional view of an electronic device 200A according to the embodiment. Figure 2 The electronic device 200A may include a substrate 210 , a light source 220 on the substrate 210 , and a color conversion member 230 on the light source 220 .

[0188] For example, the light source 220 may be a backlight unit (BLU) used in a liquid crystal display (LCD), a fluorescent lamp, a light-emitting device (e.g., an organic light-emitting device or a quantum dot light-emitting device (QLED)), or any combination thereof. The color conversion member 230 may be arranged in at least one traveling direction of light emitted from the light source 220.

[0189] At least one region of the color conversion member 230 of the electronic device 200A may include quantum dots, and the region may absorb light emitted from the light source 220 to emit red light having a maximum emission wavelength in the range of about 600 nm to about 700 nm or emit blue light having a maximum emission wavelength in the range of about 180 nm to about 430 nm.

[0190] In this specification, the expression “the color conversion member 230 is arranged in at least one traveling direction of light emitted from the light source 220 ” does not exclude that other elements are further included between the color conversion member 230 and the light source 220 .

[0191] For example, a polarizing plate, a liquid crystal layer, a light guide plate, a diffusion plate, a prism sheet, a microlens sheet, a brightness enhancement sheet, a reflective film, a color filter, or any combination thereof may be further included between the light source 220 and the color conversion member 230 .

[0192] In embodiments, a polarizing plate, a liquid crystal layer, a light guide plate, a diffusion plate, a prism sheet, a microlens sheet, a brightness enhancement sheet, a reflective film, a color filter, or any combination thereof may be further included on the color conversion member 230 .

[0193] Figure 2 The electronic device 200A shown in FIG. 2 is according to an embodiment of the present disclosure, and may have any of various shapes according to the related art, and thus, may also include various structures according to the related art.

[0194] According to another embodiment, an electronic device may include a structure including a light source, a light guide plate, a color conversion member, a first polarizing plate, a liquid crystal layer, a color filter, and a second polarizing plate, which may be arranged in this order.

[0195] According to another embodiment, an electronic device may include a structure including a light source, a light guide plate, a first polarizing plate, a liquid crystal layer, a second polarizing plate, and a color conversion member, which may be arranged in this order.

[0196] In the above-described embodiment, the color filter may include a pigment or a dye.In the above-described embodiment, one of the first polarizing plate and the second polarizing plate may be a vertical polarizing plate, and the other of the first polarizing plate and the second polarizing plate may be a horizontal polarizing plate.

[0197] [Light-emitting device]

[0198] In embodiments, quantum dots as described herein can be used as emitters. Thus, according to another embodiment, a light-emitting device may include: a first electrode; a second electrode facing the first electrode; an intermediate layer between the first and second electrodes and including an emissive layer; and quantum dots. For example, the emissive layer of the light-emitting device may include quantum dots. The light-emitting device may also include a hole transport region between the first electrode and the emissive layer, an electron transport region between the emissive layer and the second electrode, or a combination thereof.

[0199] [ Figure 3 Description]

[0200] Figure 3 is a schematic cross-sectional view of a light emitting device 1A according to the embodiment.

[0201] The light emitting device 1A may include: a first electrode 110; a second electrode 150 facing the first electrode 110; an intermediate layer 130 between the first electrode 110 and the second electrode 150 and including an emission layer; and quantum dots. Hereinafter, each layer of the light emitting device 1A will be described.

[0202] According to an embodiment,

[0203] The first electrode 110 of the light emitting device 1A may be an anode.

[0204] The second electrode 150 of the light emitting device 1A may be a cathode.

[0205] The intermediate layer 130 may further include a hole transport region between the first electrode 110 and the emission layer and an electron transport region between the emission layer and the second electrode 150.

[0206] The hole transport region may include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, or any combination thereof, and

[0207] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0208] According to another embodiment, the quantum dots may be included between the first electrode and the second electrode of the light emitting device. Thus, the quantum dots may be included in an intermediate layer of the light emitting device. For example, the emission layer of the intermediate layer may include the quantum dots.

[0209] According to another embodiment, an emissive layer of an intermediate layer in a light-emitting device may include a dopant and a host, and the host may include quantum dots. For example, quantum dots may serve as the host. The emissive layer may emit red, green, blue, and / or white light. For example, the emissive layer may emit red light. The red light may have a maximum emission wavelength, for example, in the range of approximately 600 nm to approximately 700 nm.

[0210] According to another embodiment, the emission layer of the intermediate layer in the light-emitting device may include a dopant and a host, the host may include quantum dots, and the dopant may emit blue light or red light. For example, the dopant may include a transition metal and m ligands, and m may be an integer from 1 to 6. The m ligands may be the same as or different from each other, at least one of the m ligands may be bonded to the transition metal via a carbon-transition metal bond, and the carbon-transition metal bond may be a coordination bond. For example, at least one of the m ligands may be a carbene ligand (e.g., Ir(pmp)3, etc.). The transition metal may be, for example, iridium, platinum, osmium, palladium, rhodium or gold, etc. Further details about the emission layer and the dopant may be the same as described herein.

[0211]

[0212] According to another embodiment, the light emitting device may include a capping layer outside the first electrode or outside the second electrode.

[0213] For example, the light-emitting device may further include at least one of a first capping layer outside the first electrode and a second capping layer outside the second electrode, and quantum dots may be included in at least one of the first capping layer and the second capping layer. Further details regarding the first capping layer and / or the second capping layer may be the same as those described herein.

[0214] According to an embodiment, a light emitting device may include:

[0215] a first capping layer, external to the first electrode and comprising quantum dots;

[0216] a second capping layer, external to the second electrode and comprising quantum dots; or

[0217] a first capping layer and a second capping layer.

[0218] In the specification, the expression “(the intermediate layer and / or the capping layer) includes quantum dots” may be interpreted as “(the intermediate layer and / or the capping layer) may include the quantum dots or two or more different quantum dots.”

[0219] In the specification, the term "intermediate layer" may refer to a single layer and / or a plurality of layers between a first electrode and a second electrode of a light emitting device.

[0220] According to another embodiment, an electronic device may include quantum dots and / or light-emitting devices as described herein. The electronic device may also include a thin film transistor. For example, the electronic device may also include a thin film transistor including a source electrode and a drain electrode, wherein the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode. In an embodiment, the electronic device may also include a color filter, a color conversion layer, a touch screen layer, a polarization layer, or any combination thereof. Further details about the electronic device may be the same as described herein.

[0221] In the following, reference will be made to Figure 3 A structure of a light emitting device 1A according to the embodiment and a method of manufacturing the light emitting device 1A are described.

[0222] Figure 3 1A is a schematic cross-sectional view of a light emitting device 1A according to an embodiment of the present invention. The light emitting device 1A may include a first electrode 110 , an intermediate layer 130 , and a second electrode 150 .

[0223] [First electrode 110]

[0224] exist Figure 3In the embodiment, a substrate may be further included under the first electrode 110 or on the second electrode 150. The substrate may be a glass substrate or a plastic substrate. In an embodiment, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0225] The first electrode 110 may be formed, for example, by depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 may be a high work function material that facilitates injection of holes.

[0226] The first electrode 110 may be a reflective electrode, a semi-transmissive semi-reflective electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In an embodiment, when the first electrode 110 is a semi-transmissive semi-reflective electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0227] The first electrode 110 may have a structure consisting of a single layer or a structure including a plurality of layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0228] [Middle layer 130]

[0229] The intermediate layer 130 may be disposed on the first electrode 110. The intermediate layer 130 may include an emission layer.

[0230] The intermediate layer 130 may further include a hole transport region between the first electrode 110 and the emission layer and an electron transport region between the emission layer and the second electrode 150 .

[0231] The intermediate layer 130 may include a metal-containing compound such as an organometallic compound or an inorganic material such as a quantum dot, etc., in addition to various organic materials.

[0232] In an embodiment, the intermediate layer 130 may include two or more emission units stacked between the first electrode 110 and the second electrode 150 and at least one charge generation layer disposed between adjacent units among the two or more emission units. When the intermediate layer 130 includes two or more emission units and at least one charge generation layer, the light-emitting device 1A may be a tandem light-emitting device.

[0233] [Hole Transport Region in Intermediate Layer 130]

[0234] The hole transport region may have a structure composed of a layer composed of a single material, a structure composed of layers including different materials, or a structure including a plurality of layers including different materials.

[0235] The hole transport region may include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, or any combination thereof.

[0236] In an embodiment, the hole transport region may have a multi-layer structure, comprising a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission assisting layer structure, a hole injection layer / emission assisting layer structure, a hole transport layer / emission assisting layer structure, or a hole injection layer / hole transport layer / emission assisting layer structure, wherein the layers of each structure may be stacked from the first electrode 110 in their corresponding stated order, but the structure of the hole transport region is not limited thereto.

[0237] In an embodiment, the hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0238] [Formula 201]

[0239]

[0240] [Formula 202]

[0241]

[0242] In Equations 201 and 202,

[0243] L 201 To L 204 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0244] L 205 Can be *-O-*', *-S-*', *-N(Q201 )-*', unsubstituted or replaced by at least one R 10a Substituted C1-C 20 Alkylene, unsubstituted or substituted by at least one R 10a Substituted C2-C 20 Alkenylene, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0245] xa1 to xa4 may each independently be an integer from 0 to 5,

[0246] xa5 can be an integer from 1 to 10,

[0247] R 201 to R 204 and Q 201 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0248] R 201 and R 202 may be optionally substituted via a single bond, unsubstituted or substituted by at least one R 10a Substituted C1-C5 alkylene, or unsubstituted or substituted by at least one R 10a The substituted C2-C5 alkenylene groups are linked to each other to form an unsubstituted or substituted C2-C5 alkenyl group. 10a Replaced C8-C 60 Polycyclic groups (eg, carbazolyl groups, etc.) (eg, compound HT16, etc.)

[0249] R 203 and R 204 may be optionally substituted via a single bond, unsubstituted or substituted by at least one R 10a Substituted C1-C5 alkylene, or unsubstituted or substituted by at least one R 10a The substituted C2-C5 alkenylene groups are linked to each other to form an unsubstituted or substituted C2-C5 alkenyl group. 10a Replaced C8-C 60 Polycyclic groups, and

[0250] na1 can be an integer from 1 to 4.

[0251] In an embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each independently include at least one of the groups represented by Formulas CY201 to CY217:

[0252]

[0253] In formulas CY201 to CY217, R 10b and R 10c can be independently compared with R 10a Same as described, CY 201 To Ring CY 204 Can be C3-C independently 20 Carbocyclic or C1-C 20 heterocyclic group, and at least one hydrogen in Formula CY201 to Formula CY217 may be unsubstituted or replaced by R as described herein. 10a replace.

[0254] According to an embodiment, in Formula CY201 to Formula CY217, ring CY 201 To Ring CY 204 Each may independently be phenyl, naphthyl, phenanthrenyl or anthracenyl.

[0255] According to another embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each independently include at least one of the groups represented by Formulas CY201 to CY203.

[0256] According to another embodiment, the compound represented by Formula 201 may include at least one of the groups represented by Formulas CY201 to CY203 and at least one of the groups represented by Formulas CY204 to CY217.

[0257] According to another embodiment, in equation 201, xa1 may be 1, R 201 may be a group represented by one of Formula CY201 to Formula CY203, xa2 may be 0, and R 202 It may be a group represented by one of Formula CY204 to Formula CY207.

[0258] According to another embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formulas CY201 to CY203.

[0259] According to another embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formula CY201 to Formula CY203, and may each independently include at least one of the groups represented by Formula CY204 to Formula CY217.

[0260] According to another embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formulas CY201 to CY217.

[0261] In an embodiment, the hole transport region may include one of compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or any combination thereof:

[0262]

[0263]

[0264]

[0265]

[0266]

[0267] The thickness of the hole transport region can be approximately to approximately For example, the thickness of the hole transport region can be in the range of about to approximately When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about to approximately and the thickness of the hole transport layer can be in the range of about to approximately For example, the thickness of the hole injection layer can be about to approximately For example, the thickness of the hole transport layer can be in the range of about to approximately When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0268] The emission-assisting layer can improve light emission efficiency by compensating the optical resonance distance according to the wavelength of light emitted by the emission layer, and the electron blocking layer can block electrons from leaking from the emission layer to the hole transport region. Materials that can be included in the hole transport region can be included in the emission-assisting layer and the electron blocking layer.

[0269] [p-dopant]

[0270] The hole transport region may include a charge generating material for improving the conductive properties in addition to the materials described above. The charge generating material may be dispersed uniformly or non-uniformly in the hole transport region (eg, in the form of a single layer composed of the charge generating material).

[0271] The charge generating material may be, for example, a p-dopant.

[0272] In an embodiment, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level equal to or less than approximately −3.5 eV.

[0273] According to an embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including the element EL1 and the element EL2, or any combination thereof.

[0274] Examples of quinone derivatives may include TCNQ and F4-TCNQ, etc.:

[0275]

[0276] Examples of the cyano group-containing compound may include HAT-CN and a compound represented by Formula 221, and the like:

[0277]

[0278] [Formula 221]

[0279]

[0280] In formula 221,

[0281] R 221 to R 223 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0282] R 221 to R 223 At least one of them can be independently: C3-C 60 Carbocyclic or C1-C 60heterocyclic group, each substituted by the following groups: cyano; -F; -Cl; -Br; -I; C1-C1-substituted by cyano, -F, -Cl, -Br, -I or any combination thereof 20 alkyl; or any combination thereof.

[0283] In the compound including the element EL1 and the element EL2, the element EL1 may be a metal, a metalloid, or any combination thereof, and the element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0284] Examples of metals may include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), etc. (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); late transition metals (for example, zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metals (for example, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.);

[0285] Examples of metalloids may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0286] Examples of non-metals may include oxygen (O), halogens (eg, F, Cl, Br, I, etc.), and the like.

[0287] Examples of compounds containing element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0288] Examples of metal oxides may include tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxide (e.g., ReO3, etc.), etc.

[0289] Examples of the metal halide may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0290] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.

[0291] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2, among others.

[0292] Examples of transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, T aBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr 2, ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, etc.), r2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.) and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0293] Examples of late transition metal halides may include zinc halides (eg, ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (eg, InI3, etc.), and tin halides (eg, SnI2, etc.), among others.

[0294] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3, among others.

[0295] Examples of the metalloid halide may include antimony halide (eg, SbCl 5 , etc.), and the like.

[0296] Examples of metal tellurides may include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, F eTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), late transition metal tellurides (e.g., ZnTe, etc.) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0297] [Emitting Layer in Intermediate Layer 130]

[0298] When the light-emitting device 1A is a full-color light-emitting device, the emission layer can be patterned into a red emission layer, a green emission layer and / or a blue emission layer according to the sub-pixel. In an embodiment, the emission layer may have a stacked structure of two or more layers of a red emission layer, a green emission layer and a blue emission layer, in which the two or more layers may be in contact with each other or may be separated from each other to emit white light. In an embodiment, the emission layer may include two or more materials of a red light-emitting material, a green light-emitting material and a blue light-emitting material, in which the two or more materials may be mixed with each other in a single layer to emit white light.

[0299] According to an embodiment, the emission layer may include quantum dots, which may be quantum dots as described herein.

[0300] The emission layer may be formed by applying an ink composition on the hole transport region and evaporating at least a portion of a solvent included in the ink composition.

[0301] The ink composition can be applied by using inkjet printing, spin coating, casting, microgravure coating, gravure coating, rod coating, roller coating, wire bar coating, dip coating, spray coating, screen printing, flexographic printing, offset printing, etc.

[0302] In an embodiment, in addition to quantum dots, the emission layer may further include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0303] The amount of the dopant in the emission layer may be in the range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host.

[0304] In an embodiment, the emission layer may include a delayed fluorescent material. The delayed fluorescent material may be used as a host or a dopant in the emission layer.

[0305] The thickness of the emission layer can be approximately to approximately For example, the thickness of the emission layer can be in the range of to approximately When the thickness of the emission layer is within any of these ranges, excellent light emitting characteristics can be obtained without significantly increasing the driving voltage.

[0306] [main body]

[0307] In an embodiment, the host may include a compound represented by Formula 301:

[0308] [Equation 301]

[0309] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21

[0310] In formula 301,

[0311] Ar 301 and L 301 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0312] xb11 can be 1, 2 or 3,

[0313] xb1 can be an integer from 0 to 5,

[0314] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or replaced by at least one R 10a Substituted C1-C 60 Alkyl, unsubstituted or substituted with at least one R10a Substituted C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a Substituted C2-C 60 Alkynyl, unsubstituted or substituted with at least one R 10a Substituted C1-C 60 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 ),-C(=O)(Q 301 )、-S(=O)2(Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0315] xb21 can be an integer from 1 to 5, and

[0316] Q 301 To Q 303 can be independently compared with the Q 11 Same as described.

[0317] In an embodiment, in Formula 301, when xb11 is 2 or greater, two or more Ar 301 can be connected to each other via a single bond.

[0318] In an embodiment, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0319] [Formula 301-1]

[0320]

[0321] [Formula 301-2]

[0322]

[0323] In Formula 301-1 and Formula 301-2,

[0324] Ring A 301 To Ring A 304 may be each independently unsubstituted or substituted with at least one R 10aSubstituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C3-C 60 heterocyclic group,

[0325] X 301 Can be O, S, N[(L 304 ) xb4 -R 304 ]、C(R 304 )(R 305 ) or Si(R 304 )(R 305 ),

[0326] xb22 and xb23 can each independently be 0, 1 or 2,

[0327] L 301 , xb1 and R 301 may each be the same as described herein,

[0328] L 302 To L 304 can be independently compared with the L 301 Same as described,

[0329] xb2 through xb4 may each independently be the same as described herein with respect to xb1, and

[0330] R 302 to R 305 and R 311 to R 314 can be independently compared with the R 301 Same as described.

[0331] In an embodiment, the host can include an alkaline earth metal complex, a late transition metal complex, or any combination thereof. For example, the host can include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0332] In an embodiment, the host may include one of Compound H1 to Compound H128, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), 9,10-di(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tris(carbazol-9-yl)benzene (TCP), or any combination thereof:

[0333]

[0334]

[0335]

[0336]

[0337]

[0338]

[0339] [Phosphorescent dopant]

[0340] The phosphorescent dopant may include at least one transition metal as a central metal.

[0341] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.

[0342] The phosphorescent dopant may be electrically neutral.

[0343] In an embodiment, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0344] [Formula 401]

[0345] M(L 401 ) xc1 (L 402 ) xc2

[0346] [Formula 402]

[0347]

[0348] In Equations 401 and 402,

[0349] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)),

[0350] L 401 may be a ligand represented by formula 402, and xc1 may be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L 401 can be the same as or different from each other,

[0351] L 402 can be an organic ligand, and xc2 can be 0, 1, 2, 3 or 4, wherein when xc2 is 2 or greater, two or more L 402 can be the same as or different from each other,

[0352] X 401 and X 402 may each independently be nitrogen or carbon,

[0353] Ring A 401 and Ring A 402 Can be C3-C independently 60 Carbocyclic or C1-C 60 heterocyclic group,

[0354] T 401 It can be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*'、*-C(Q 411 )(Q 412 )-*'、*-C(Q 411 )=C(Q 412 )-*'、*-C(Q 411 )=*' or *=C=*',

[0355] X 403 and X 404 can each independently be a chemical bond (eg, a covalent bond or a coordinate bond), O, S, N (Q 413 )、B(Q 413 )、P(Q 413 )、C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ),

[0356] Q 411 To Q 414 can be independently compared with the Q 11 Same as described,

[0357] R 401 and R 402 can be each independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or replaced by at least one R 10a Substituted C1-C 20 Alkyl, unsubstituted or substituted with at least one R 10a Substituted C1-C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 401 )(Q 402 )(Q403 )、-N(Q 401 )(Q 402 )、-B(Q 401 )(Q 402 ),-C(=O)(Q 401 )、-S(=O)2(Q 401 ) or -P(=O)(Q 401 )(Q 402 ),

[0358] Q 401 To Q 403 can be independently compared with the Q 11 Same as described,

[0359] xc11 and xc12 may each independently be an integer from 0 to 10, and

[0360] * and *' in Formula 402 may each indicate a binding site with M in Formula 401.

[0361] For example, in Equation 402, X 401 can be nitrogen and X 402 It can be carbon, or X 401 and X 402 Each may be nitrogen.

[0362] In an embodiment, in Formula 401, when xc1 is 2 or greater, two or more L 401 The two rings A 401 It can optionally be linked via T 402 connected to each other, and two or more L 401 The two rings A 402 It can optionally be linked via T 403 connected to each other (see Compound PD1 to Compound PD4 and Compound PD7). 402 and T 403 can be independently compared with the T 401 Same as described.

[0363] In formula 401, L 402 It can be an organic ligand. For example, L 402 It may include a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), -C(=O), an isonitrile group, -CN, a phosphorus-containing group (e.g., a phosphine group, a phosphite group, etc.), or any combination thereof.

[0364] In an embodiment, the phosphorescent dopant may include, for example, one of Compound PD1 to Compound PD39 or any combination thereof:

[0365]

[0366]

[0367]

[0368] [Fluorescent dopant]

[0369] The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or any combination thereof.

[0370] In an embodiment, the fluorescent dopant may include a compound represented by Formula 501:

[0371] [Formula 501]

[0372]

[0373] In formula 501,

[0374] Ar 501 , L 501 To L 503 、R 501 and R 502 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group,

[0375] xd1 to xd3 may each independently be 0, 1, 2 or 3, and

[0376] xd4 can be 1, 2, 3, 4, 5 or 6.

[0377] For example, in Formula 501, Ar 501 It may be a fused cyclic group in which three or more monocyclic groups are fused together (e.g., anthracenyl, yl, pyrene, etc.).

[0378] In an embodiment, in equation 501, xd4 may be 2.

[0379] In an embodiment, the fluorescent dopant may include one of compounds FD1 to FD37, DPVBi, DPAVBi, or any combination thereof:

[0380]

[0381]

[0382]

[0383]

[0384] [Delayed fluorescence material]

[0385] The emitting layer may include a delayed fluorescent material.

[0386] In the specification, the delayed fluorescent material may be any compound capable of emitting delayed fluorescence based on a delayed fluorescence emission mechanism.

[0387] The delayed fluorescent material included in the emission layer may serve as a host or a dopant depending on the types of other materials included in the emission layer.

[0388] According to an embodiment, the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material may be at least 0 eV but not greater than about 0.5 eV. When the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material satisfies the above-described range, up-conversion of the delayed fluorescent material from the triplet state to the singlet state may effectively occur, and thus, the light-emitting device 1A may have improved luminous efficiency.

[0389] In an embodiment, the delayed fluorescent material may include: a molecule including at least one electron donor (eg, a π-electron-rich C3-C 60 a cyclic group (such as a carbazolyl group) and at least one electron acceptor (for example, a sulfoxide group, a cyano group or a π-electron-deficient nitrogen-containing C1-C 60 or containing C8-C8 wherein two or more cyclic groups are fused together and share boron (B) 60 Polycyclic materials, etc.

[0390] In an embodiment, the delayed fluorescent material may include at least one of Compound DF1 to Compound DF14:

[0391]

[0392]

[0393] [Electron Transport Region in Intermediate Layer 130]

[0394] The electron transport region may have a structure composed of a layer composed of a single material, a structure composed of layers including different materials, or a structure including a plurality of layers including different materials.

[0395] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0396] In an embodiment, the electron transport region may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, wherein the layers of each structure may be stacked from the emission layer in their corresponding stated order, but the structure of the electron transport region is not limited thereto.

[0397] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include a metal-free compound comprising at least one π-electron-deficient nitrogen-containing C1-C 60 Cyclic base.

[0398] In an embodiment, the electron transport region may include a compound represented by Formula 601:

[0399] [Equation 601]

[0400] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0401] In Equation 601,

[0402] Ar 601 and L 601 may be each independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0403] xe11 can be 1, 2 or 3,

[0404] xe1 can be 0, 1, 2, 3, 4, or 5,

[0405] R 601 may be unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603),-C(=O)(Q 601 )、-S(=O)2(Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0406] Q 601 To Q 603 can be independently compared with the Q 11 Same as described,

[0407] xe21 can be 1, 2, 3, 4, or 5, and

[0408] Ar 601 、L 601 and R 601 At least one of the R 10a Substituted π-electron-deficient nitrogen-containing C1-C 60 Cyclic base.

[0409] In an embodiment, in Formula 601, when xe11 is 2 or greater, two or more Ar 601 can be connected to each other via a single bond.

[0410] In an embodiment, in Formula 601, Ar 601 may be unsubstituted or substituted with at least one R 10a substituted anthracenyl.

[0411] In an embodiment, the electron transport region may include a compound represented by Formula 601-1:

[0412] [Formula 601-1]

[0413]

[0414] In formula 601-1,

[0415] X 614 Can be N or C(R 614 ), X 615 Can be N or C(R 615 ), X 616 Can be N or C(R 616 ), and X 614 To X 616 At least one of may be N,

[0416] L 611 To L 613 can be independently compared with the L 601 Same as described,

[0417] xe611 to xe613 can each independently be the same as described herein with respect to xe1,

[0418] R 611 to R 613 can be independently compared with the R 601 Same as described, and

[0419] R 614 to R 616 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, either unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group.

[0420] In an embodiment, in Formula 601 and Formula 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2.

[0421] In an embodiment, the electron transport region may include one of Compound ET1 to Compound ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0422]

[0423]

[0424]

[0425] The thickness of the electron transport region can be approximately to approximately For example, the thickness of the electron transport region can be in the range of about to approximately When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may be independently about to approximately and the thickness of the electron transport layer can be in the range of about to approximately For example, the thickness of the buffer layer, the hole blocking layer, or the electron control layer can be independently about to approximately For example, the thickness of the electron transport layer can be in the range of about to approximately When the thickness of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer and / or the electron transport region is within these ranges, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0426] The electron transport region (eg, an electron transport layer in the electron transport region) may further include a metal-containing material in addition to the materials described above.

[0427] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex may be Li ion, Na ion, K ion, Rb ion, or Cs ion, and the metal ion of the alkaline earth metal complex may be Be ion, Mg ion, Ca ion, Sr ion, or Ba ion.

[0428] The ligands coordinated to the metal ion of the alkali metal complex or to the metal ion of the alkaline earth metal complex can each independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0429] In an embodiment, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (Liq) or compound ET-D2:

[0430]

[0431] The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode 150. The electron injection layer may directly contact the second electrode 150.

[0432] The electron injection layer may have a structure composed of a layer composed of a single material, a structure composed of layers including different materials, or a structure including a plurality of layers including different materials.

[0433] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0434] The alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0435] The compounds containing alkali metals, alkaline earth metals, and rare earth metals may be oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), or tellurides of alkali metals, alkaline earth metals, and rare earth metals, or any combination thereof.

[0436] The compounds containing alkali metals may include: alkali metal oxides, such as Li2O, Cs2O, and K2O, etc.; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and KI, etc.; or any combination thereof. The compounds containing alkaline earth metals may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying the condition 0 < x < 1), and Ba x Ca 1-x O (where x is a real number satisfying the condition 0 < x < 1), etc. The compounds containing rare earth metals may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In embodiments, the compounds containing rare earth metals may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3, etc.

[0437] The alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include: alkali metal ions, alkaline earth metal ions, or rare earth metal ions; and ligands bonded to the metal ions (e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof).

[0438] In an embodiment, the electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above. In an embodiment, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0439] According to an embodiment, the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide); or the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide) and an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, or a LiF:Yb co-deposition layer.

[0440] When the electron injection layer also includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex or any combination thereof can be uniformly or non-uniformly dispersed in the matrix including the organic material.

[0441] The thickness of the electron injection layer can be approximately to approximately For example, the thickness of the electron injection layer can be about to approximately When the thickness of the electron injection layer is within any of the ranges described above, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0442] [Second electrode 150]

[0443] The second electrode 150 may be disposed on the intermediate layer 130 having the structure described above. The second electrode 150 may be a cathode serving as an electron injection electrode. When the second electrode 150 is a cathode, the second electrode 150 may include a material having a low work function, such as a metal, an alloy, a conductive compound, or any combination thereof.

[0444] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive semi-reflective electrode, or a reflective electrode.

[0445] The second electrode 150 may have a single-layer structure or a multi-layer structure.

[0446] [Capping layer]

[0447] The light-emitting device 1A may include a first capping layer arranged outside the first electrode 110 and / or a second capping layer arranged outside the second electrode 150. In embodiments, the light-emitting device 1A may have a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150 are stacked in the stated order, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in the stated order, or a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in the stated order.

[0448] Light generated in the emission layer of the intermediate layer 130 of the light-emitting device 1A can be emitted to the outside through the first electrode 110, which can be a semi-transmissive and semi-reflective electrode or a transmissive electrode, and through the first capping layer. Light generated in the emission layer of the intermediate layer 130 of the light-emitting device 1A can be emitted to the outside through the second electrode 150, which can be a semi-transmissive and semi-reflective electrode or a transmissive electrode, and through the second capping layer.

[0449] According to the principle of constructive interference, the first capping layer and the second capping layer can each improve external emission efficiency. Therefore, the light extraction efficiency of the light emitting device 1A can be improved, so that the light emitting efficiency of the light emitting device 1A can be improved.

[0450] The first capping layer and the second capping layer may each include a material having a refractive index equal to or greater than about 1.6 (with respect to a wavelength of about 589 nm).

[0451] The first capping layer and the second capping layer may each independently be a capping layer including quantum dots, an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0452] At least one of the first capping layer and the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. In an embodiment, the carbocyclic compound, the heterocyclic compound, and the amine-containing compound may each be optionally substituted with a substituent comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to an embodiment, at least one of the first capping layer and the second capping layer may each independently include an amine-containing compound.

[0453] For example, at least one of the first capping layer and the second capping layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof.

[0454] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0455]

[0456]

[0457] [membrane]

[0458] Quantum dots can be included in various films. Therefore, according to another embodiment, the film can include quantum dots. The film can be, for example, an optical component (or light control device) (e.g., a color filter, a color conversion component, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, a polarizing layer, a layer containing quantum dots, etc.), a light blocking component (e.g., a light reflecting layer, a light absorbing layer, etc.), or a protective component (e.g., an insulating layer, a dielectric layer, etc.).

[0459] [Optical components]

[0460] Quantum dots can be used in various optical components. Therefore, according to another embodiment, an optical component may include quantum dots.

[0461] According to an embodiment, the optical member may be a light control device.

[0462] According to another embodiment, the optical member may be a color filter, a color conversion member, a capping layer, a light exit efficiency enhancing layer, a selective light absorption layer, or a polarizing layer.

[0463] For example, the optical member may be a color conversion member.

[0464] The color conversion member may include a substrate and a pattern layer formed on the substrate.

[0465] The substrate may be a substrate constituting a color conversion member, or may be a region of various devices (e.g., a display device) in which a color conversion member is arranged. The substrate may be a glass substrate, a silicon (Si) substrate, a silicon oxide (SiO x ) substrate and / or a polymer substrate, and the polymer substrate may include polyethersulfone (PES) or polycarbonate (PC).

[0466] The pattern layer may include quantum dots in the form of a thin film. For example, the pattern layer may be in the form of a thin film including quantum dots.

[0467] The color conversion member including the substrate and the pattern layers may further include partition walls or a black matrix formed between the pattern layers. In an embodiment, the color conversion member may further include a color filter to further improve light conversion efficiency.

[0468] The color conversion member may include a red pattern layer that transmits red light, a green pattern layer that transmits green light, a blue pattern layer that transmits blue light, or any combination thereof. The red pattern layer, green pattern layer, and / or blue pattern layer may be achieved by controlling the composition, structure, and / or structure of quantum dots.

[0469] According to another embodiment, a device may include quantum dots (or an optical member including quantum dots).

[0470] The apparatus may further include a light source, and the quantum dots (or an optical member including the quantum dots) may be arranged in an optical path of light emitted from the light source.

[0471] The light source can emit blue light, red light, green light, or white light. For example, the light source can emit blue light or red light. The light emitted from the light source can be absorbed by the quantum dots.

[0472] The light source may be an organic light emitting device (OLED) or a light emitting diode (LED).

[0473] Light emitted from the light source as described above may have a wavelength converted by the quantum dots while passing through the quantum dots, and thus, light having a wavelength different from that of the light emitted from the light source may be emitted by the quantum dots.

[0474] For example, quantum dots may absorb and convert light emitted from a light source to emit light having a maximum emission wavelength of about 400 nm to about 2500 nm.

[0475] [Electronic equipment]

[0476] Quantum dots (e.g. Figure 1 100) and a light-emitting device including quantum dots (e.g., Figure 3 The light emitting device 10A in the embodiment of the present invention can be included in various electronic devices. For example, the electronic device including quantum dots and the light emitting device including quantum dots can be a light emitting device or an authentication device.

[0477] In addition to the light-emitting device, the electronic device (e.g., a light-emitting device) may further include a color filter, a color conversion layer, or a color filter and a color conversion layer. The color filter and / or the color conversion layer may be arranged in at least one direction in which the light emitted from the light-emitting device travels. For example, the light emitted from the light-emitting device may be red light, blue light, or white light. Further details about the light-emitting device may be the same as described herein. According to an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, as described herein.

[0478] The electronic device may include a substrate, the substrate may include a plurality of sub-pixels, the color filter may include a plurality of color filter regions respectively corresponding to the plurality of sub-pixels, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixels.

[0479] A pixel-defining film may be disposed between the plurality of sub-pixels to define each sub-pixel.

[0480] The color filter may further include a plurality of color filter areas and a light shielding pattern disposed between the plurality of color filter areas, and the color conversion layer may further include a plurality of color conversion areas and a light shielding pattern disposed between the plurality of color conversion areas.

[0481] The plurality of color filter regions (or color conversion regions) may include: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In embodiments, the color filter regions (or color conversion regions) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Further details regarding quantum dots may be the same as described herein. The first region, the second region, and / or the third region may each further include a scatterer.

[0482] In an embodiment, the light emitting device may emit a first light, the first region may absorb the first light to emit a first-first color light, the second region may absorb the first light to emit a second-first color light, and the third region may absorb the first light to emit a third-first color light. The first-first color light, the second-first color light, and the third-first color light may have different maximum emission wavelengths. For example, the first light may be blue light, the first-first color light may be red light, the second-first color light may be green light, and the third-first color light may be blue light.

[0483] In addition to the light-emitting device described above, the electronic device may further include a thin film transistor. The thin film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode or the second electrode of the light-emitting device.

[0484] The thin film transistor may further include a gate electrode, a gate insulating film, and the like.

[0485] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, or the like.

[0486] The electronic device may further include a sealing portion for sealing the light-emitting device. The sealing portion may be arranged between the color filter and / or color conversion layer and the light-emitting device. The sealing portion may allow light from the light-emitting device to be extracted to the outside while simultaneously preventing ambient air and moisture from penetrating the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including at least one of an organic layer and / or an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0487] Depending on the intended use of the electronic device, various functional layers may be included on the sealing portion in addition to the color filter and / or color conversion layer. Examples of functional layers include a touch screen layer and a polarizing layer. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information of a living being (e.g., a fingertip, pupil, etc.).

[0488] The authentication device may include a biometric information collector in addition to the light emitting device as described above.

[0489] The electronic device can be applied to various displays, light sources, lighting equipment, personal computers (for example, mobile personal computers), mobile phones, digital cameras, electronic notepads, electronic dictionaries, electronic game consoles, medical instruments (for example, electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasonic diagnostic devices or endoscope displays), fish finders, various measuring instruments, meters (for example, meters for vehicles, aircraft and ships) and projectors, etc.

[0490] [Electronic devices]

[0491] Quantum dots and light-emitting devices including quantum dots (e.g., Figure 3 The light emitting device 10A) in the embodiment can be included in various electronic devices.

[0492] In an embodiment, the electronic device including the light emitting device can be a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display (such as a rollable display, a foldable display, or a stretchable display), a laser printer, a phone (such as a mobile phone or a tablet phone), a tablet personal computer, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a three-dimensional (3D) display, a virtual reality display, an augmented reality display, a vehicle, a video wall with multiple displays stitched together, a theater screen, a stadium screen, a light therapy device, or a sign.

[0493] The light emitting device may have excellent effects in terms of light emitting efficiency and long lifespan, and thus an electronic device including the light emitting device may have characteristics such as high brightness, high resolution, and low power consumption.

[0494] [ Figure 4 Description]

[0495] Figure 4 is a schematic perspective view of an electronic device 1 including a light emitting device according to an embodiment.

[0496] The electronic device 1, which may be a device for displaying moving images or still images, may be not only a portable electronic device such as a mobile phone, a smartphone, a tablet computer, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, or an ultra-mobile personal computer (PC) (UMPC), but also various products such as a television, a laptop computer, a monitor, a billboard, or an Internet of Things (IoT) device. The electronic device 1 may be any of the products described above or a portion thereof.

[0497] In an embodiment, the electronic device 1 may be a wearable device such as a smart watch, a watch phone, a glasses-type display, or a head-mounted display (HMD), or may be a part of a wearable device. However, implementation is not limited thereto.

[0498] In an embodiment, examples of the electronic device 1 may include a dashboard of a vehicle, a central information display (CID) on a center console or instrument panel of a vehicle, a room mirror display that replaces a side mirror of a vehicle, an entertainment display arranged for a rear seat of a vehicle or arranged on the rear of a front seat, a head-up display (HUD) mounted at the front of the vehicle or projected on the front windshield, or a computer-generated holographic augmented reality head-up display (CGH AR HUD). For ease of explanation, Figure 4 An embodiment is shown in which the electronic device 1 is a smartphone.

[0499] The electronic device 1 may include a display area DA and a non-display area NDA outside the display area DA. The display device may realize an image through a two-dimensional array of a plurality of pixels arranged in the display area DA.

[0500] The non-display area NDA is an area where no image is displayed and may surround (e.g., completely surround) the display area DA. A driver for supplying electrical signals or power to the plurality of pixels arranged in the display area DA may be arranged in the non-display area NDA. Pads, which are areas to which electronic components or printed circuit boards can be electrically connected, may be arranged in the non-display area NDA.

[0501] In the electronic device 1, the length in the x-axis direction and the length in the y-axis direction may be different from each other. Figure 4 As shown in , the length in the x-axis direction may be shorter than the length in the y-axis direction. In an embodiment, the length in the x-axis direction may be the same as the length in the y-axis direction. In an embodiment, the length in the x-axis direction may be longer than the length in the y-axis direction.

[0502] [ Figure 5 and Figures 6A to 6C Description]

[0503] Figure 5 is a schematic perspective view of the exterior of a vehicle 1000 as an electronic device including a light emitting device according to an embodiment. Figures 6A to 6C Each is a schematic diagram of the interior of a vehicle 1000 according to an embodiment.

[0504] Reference Figure 5 、 Figure 6A 、 Figure 6B and Figure 6C , embodiments of the vehicle 1000 may include various devices for moving an object to be transported (such as a person, object, or animal) from a starting point to a destination. Examples of the vehicle 1000 may include a vehicle traveling on roads or tracks, a ship traveling on oceans or rivers, and an airplane flying in the sky using air.

[0505] The vehicle 1000 can travel on roads or tracks. The vehicle 1000 can move in a selected or given direction based on the rotation of at least one wheel. In embodiments, examples of the vehicle 1000 may include three-wheeled or four-wheeled vehicles, construction machinery, two-wheeled vehicles, prime movers, bicycles, and trains running on tracks.

[0506] Vehicle 1000 may include a vehicle body having an interior and an exterior, and a chassis, which is a portion other than the vehicle body in which mechanical equipment required for driving is mounted. The exterior of the vehicle body may include a front panel, a hood, a roof panel, a rear panel, a trunk, and pillars provided at the boundaries between doors. The chassis of vehicle 1000 may include a power generation device, a power transmission device, a drive device, a steering device, a brake device, a suspension device, a transmission device, a fuel system, front and rear wheels, and left and right wheels.

[0507] The vehicle 1000 may include side windows 1100 , a front window 1200 , side mirrors 1300 , an instrument cluster 1400 , a central instrument panel 1500 , a passenger seat instrument panel 1600 , and a display device 2 .

[0508] The side window glass 1100 and the front window glass 1200 may be separated by pillars disposed between the side window glass 1100 and the front window glass 1200 .

[0509] A side window glass 1100 may be mounted on a side of the vehicle 1000. In an embodiment, the side window glass 1100 may be mounted on a door of the vehicle 1000. A plurality of side window glasses 1100 may be provided, and the plurality of side window glasses 1100 may face each other. In an embodiment, the side window glass 1100 may include a first side window glass 1110 and a second side window glass 1120. In an embodiment, the first side window glass 1110 may be positioned adjacent to the instrument cluster 1400, and the second side window glass 1120 may be positioned adjacent to the passenger seat instrument panel 1600.

[0510] In an embodiment, the side window glasses 1100 may be spaced apart from each other in the x-axis direction or the -x-axis direction. For example, the first side window glass 1110 and the second side window glass 1120 may be spaced apart from each other in the x-axis direction or the -x-axis direction. For example, the virtual straight line L connecting the side window glasses 1100 may extend in the x-axis direction or the -x-axis direction. For example, the virtual straight line L connecting the first side window glass 1110 and the second side window glass 1120 may extend in the x-axis direction or the -x-axis direction.

[0511] The front window glass 1200 may be installed at the front of the vehicle 1000. The front window glass 1200 may be disposed between the side window glasses 1100 facing each other.

[0512] Side-view mirror 1300 can provide a rear view of vehicle 1000. Side-view mirror 1300 can be mounted on the exterior of the vehicle body. In an embodiment, multiple side-view mirrors 1300 can be provided. For example, one of side-view mirrors 1300 can be positioned outside first side window glass 1110, and another of side-view mirrors 1300 can be positioned outside second side window glass 1120.

[0513] Instrument cluster 1400 may be arranged in front of the steering wheel and may include a tachometer, a speedometer, a coolant temperature gauge, a fuel gauge, a turn signal indicator, a high beam indicator, warning lights, a seat belt warning light, an odometer, a speedometer, an automatic shift selector indicator light, a door open warning light, an engine oil warning light, and / or a low fuel warning light.

[0514] The central instrument panel 1500 may include a control panel on which buttons for adjusting an audio device, an air conditioning device, and a seat heater are arranged. The central instrument panel 1500 may be arranged on one side of the instrument cluster 1400 .

[0515] Passenger seat instrument panel 1600 may be spaced apart from instrument cluster 1400, and center console 1500 may be disposed between instrument cluster 1400 and passenger seat instrument panel 1600. In an embodiment, instrument cluster 1400 may be disposed corresponding to a driver's seat (not shown), and passenger seat instrument panel 1600 may be disposed corresponding to a passenger seat (not shown). In an embodiment, instrument cluster 1400 may be adjacent to first side window glass 1110, and passenger seat instrument panel 1600 may be adjacent to second side window glass 1120.

[0516] In an embodiment, the display device 2 may include a display panel 3, and the display panel 3 may display an image. The display device 2 may be arranged inside the vehicle 1000. In an embodiment, the display device 2 may be arranged between the side windows 1100 facing each other. The display device 2 may be arranged on at least one of the instrument cluster 1400, the center console 1500, and the passenger seat instrument panel 1600.

[0517] The display device 2 may include an organic light-emitting display device, an inorganic electroluminescent (EL) display device, a quantum dot display device, or the like. Hereinafter, as an example of the display device 2, an organic light-emitting display device including the light-emitting device according to the embodiment will be described. However, various types of display devices as described above may be used in the embodiments.

[0518] Reference Figure 6AThe display device 2 may be arranged on the central control instrument panel 1500. In an embodiment, the display device 2 may display navigation information. In an embodiment, the display device 2 may display information about audio settings, video settings, or vehicle settings.

[0519] Reference Figure 6B The display device 2 may be disposed on the instrument cluster 1400. When the display device 2 is disposed on the instrument cluster 1400, the instrument cluster 1400 may display driving information and the like via the display device 2. For example, the instrument cluster 1400 may digitally display driving information and the like. The instrument cluster 1400 may display vehicle information and driving information as images. For example, the needle and gauges of a tachometer, as well as various warning lights or icons, may be displayed via digital signals.

[0520] Reference Figure 6C , the display device 2 may be arranged in / on the passenger seat instrument panel 1600. The display device 2 may be embedded in or positioned on the passenger seat instrument panel 1600. In an embodiment, the display device 2 arranged on the passenger seat instrument panel 1600 may display images related to the information displayed in the instrument cluster 1400 and / or the information displayed in the center console 1500. In an embodiment, the display device 2 arranged on the passenger seat instrument panel 1600 may display information different from the information displayed in the instrument cluster 1400 and / or the information displayed in the center console 1500.

[0521] [Manufacturing method]

[0522] The layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region can be formed in a selected region by using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser induced thermal imaging.

[0523] When the layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region are formed by vacuum deposition, the deposition temperature may be in the range of about 100° C. to about 500° C., at about 10° C., depending on the materials included in the layers to be formed and the structures of the layers to be formed. -8 Up to about 10 -3 Under vacuum in the range of 10 torr and at about to approximately Deposition is performed at a deposition rate within a range of .

[0524] [Definition of terms]

[0525] As used herein, the term "C3-C 60The term "C1-C2-1" as used herein may be a cyclic group consisting of carbon atoms as the only ring-forming atoms and having 3 to 60 carbon atoms. 60 The "heterocyclic group" may be a cyclic group having 1 to 60 carbon atoms and including at least one heteroatom as a ring-constituting atom in addition to carbon atoms. 60 Carbocyclic and C1-C 60 The heterocyclic groups may each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are fused to each other. 60 The number of ring-forming atoms in the heterocyclic group can be 3 to 61.

[0526] The term "cyclic group" as used herein may be a C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group.

[0527] As used herein, the term "π-electron-rich C3-C 60 The "cyclic group" may be a cyclic group having 3 to 60 carbon atoms and may not include *-N=*' as a ring-forming portion. As used herein, the term "π-electron-deficient nitrogen-containing C1-C 60 The "cyclic group" may be a heterocyclic group having 1 to 60 carbon atoms, and may include *-N=*' as a ring-constituting portion.

[0528] In an embodiment,

[0529] C3-C 60 The carbocyclic group may be a T1 group or a group in which two or more T1 groups are fused to each other (e.g., cyclopentadienyl, adamantyl, norbornyl, phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenanthenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, phenyl, benzophenanthrenyl ...

[0530] C1-C 60The heterocyclic group may be a T2 group, a group in which two or more T2 groups are fused to each other, or a group in which at least one T2 group and at least one T1 group are fused to each other (e.g., pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiorolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiorolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, benzothiorolocarbazolyl, benzindolcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiorolyl, benzofuranodibenzofuran ... Thienyl, benzothienodibenzothienyl, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl, benzoquinolyl quinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiazolyl, azadibenzothiopheneyl, azadibenzofuranyl, etc.),

[0531] π-electron-rich C3-C 60 The cyclic group may be a T1 group, a group in which two or more T1 groups are fused to each other, a T3 group, a group in which two or more T3 groups are fused to each other, or a group in which at least one T3 group and at least one T1 group are fused to each other (e.g., C3-C 60 carbocyclyl, 1H-pyrrolyl, thiolyl, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothienocarbazolyl, benzothiololocarbazolyl, benzoindolcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiolyl, benzofuranodibenzofuranyl, benzofuranodibenzothienyl, benzothienodibenzothienyl, etc.), and

[0532] π-electron-deficient nitrogen-containing C1-C 60The cyclic group may be a T4 group, a group in which two or more T4 groups are fused to each other, a group in which at least one T4 group and at least one T1 group are fused to each other, a group in which at least one T4 group and at least one T3 group are fused to each other, or a group in which at least one T4 group, at least one T1 group and at least one T3 group are fused to each other (e.g., pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, , benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl, benzoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiazolyl, azadibenzothiophenyl, azadibenzofuranyl, etc.), wherein,

[0533] The T1 group can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornane (or bicyclo[2.2.1]heptane) group, norbornenyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane or phenyl,

[0534] The T2 group can be furyl, thienyl, 1H-pyrrolyl, thiolyl, borocyclopentyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, tetrazinyl, pyrrolidinyl, imidazolidinyl, dihydropyrrolyl, piperidinyl, tetrahydropyridinyl, dihydropyridinyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyridazinyl or dihydropyridazinyl,

[0535] The T3 group may be a furyl group, a thienyl group, a 1H-pyrrolyl group, a thiol group or a borocyclopentadienyl group, and

[0536] The T4 group can be 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiazolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl or tetrazinyl.

[0537] As used herein, the terms "cyclic group", "C3-C 60 Carbocyclic group", "C1-C 60 Heterocyclic group", "π-electron-rich C3-C 60 Cyclic group" and "π-electron-deficient nitrogen-containing C1-C 60 The “cyclic group” may each be a group fused to any cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) according to the structure of the formula using the corresponding term. For example, “phenyl” may be a benzo group, a phenyl group, or a phenylene group, etc., which can be easily understood by those skilled in the art based on the structure of the formula including “phenyl”.

[0538] One price C3-C 60 Carbocyclic or monovalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Cycloalkyl, C1-C 10 Heterocycloalkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocycloalkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic fused polycyclic group and monovalent non-aromatic fused heteropolycyclic group. 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Cycloalkylene, C1-C 10 Heterocycloalkylene, C3-C 10 Cycloalkenylene, C1-C 10 Heterocycloalkenylene, C6-C 60 Arylene, C1-C 60 heteroarylene group, a divalent non-aromatic fused polycyclic group, and a divalent non-aromatic fused heteropolycyclic group.

[0539] As used herein, the term "C1-C 60 The "alkyl" may be a linear or branched monovalent aliphatic hydrocarbon group having 1 to 60 carbon atoms, and the "C1-C 60 Examples of “alkyl” may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, tert-decyl, and the like. As used herein, the term “C1-C1-C1-alkyl” may include methyl, ethyl, n-propyl, isopropyl, n-butyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and tert-decyl. 60 "Alkylene" can be C1-C 60 An alkyl group is a divalent group having the same structure.

[0540] As used herein, the term "C2-C 60 "Alkenyl" can be a C2-C 60 The alkyl group has at least one monovalent hydrocarbon group with a carbon-carbon double bond in the middle or at the end thereof, and "C2-C 60 Examples of "alkenyl" may include ethenyl, propenyl, butenyl, etc. As used herein, the term "C2-C 60 "Alkenylene" can be a C2-C 60 Alkenyl groups are divalent groups having the same structure.

[0541] As used herein, the term "C2-C 60 "Alkynyl" can be a C2-C 60 The alkyl group has at least one monovalent hydrocarbon group with a carbon-carbon triple bond in the middle or at the end thereof, and the "C2-C 60 Examples of "alkynyl" may include ethynyl and propynyl, etc. As used herein, the term "C2-C 60 "Alkynylidene" can be a C2-C 60 Alkynyl groups are divalent groups with the same structure.

[0542] As used herein, the term "C1-C 60 "Alkoxy" can be -O(A 101 ) represented by a monovalent group (wherein, A 101 Can be C1-C 60 alkyl), and "C1-C 60 Examples of the "alkoxy group" may include methoxy, ethoxy, isopropoxy, and the like.

[0543] As used herein, the term "C3-C 10 The "cycloalkyl" may be a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and the "C3-C 10 Examples of "cycloalkyl" may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl and bicyclo[2.2.2]octyl, etc. As used herein, the term "C3-C 10 "Cycloalkylene" can be C3-C 10 The cycloalkyl group has a divalent group of the same structure.

[0544] As used herein, the term "C1-C 10 The "heterocycloalkyl group" may be a monovalent cyclic group having 1 to 10 carbon atoms and including at least one heteroatom as a ring-constituting atom in addition to the carbon atoms, and the "C1-C 10Examples of "heterocycloalkyl" may include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, tetrahydrothienyl, and the like. As used herein, the term "C1-C 10 "Heterocycloalkylene" can be C1-C 10 The heterocycloalkyl group has a divalent group of the same structure.

[0545] As used herein, the term "C3-C 10 The "cycloalkenyl group" may be a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its cyclic structure and having no aromaticity, and the "C3-C 10 Examples of "cycloalkenyl" may include cyclopentenyl, cyclohexenyl, cycloheptenyl, and the like. As used herein, the term "C3-C 10 "Cycloalkenylene" can be a C3-C 10 The cycloalkenyl group is a divalent group having the same structure.

[0546] As used herein, the term "C1-C 10 The "heterocycloalkenyl group" may be a monovalent cyclic group having 1 to 10 carbon atoms, including at least one heteroatom as a ring-forming atom in addition to carbon atoms, and having at least one double bond in its cyclic structure. 10 Examples of heterocycloalkenyl groups may include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, and the like. As used herein, the term "C1-C 10 "Heterocycloalkenylene" can be a C1-C 10 The heterocycloalkenyl group is a divalent group having the same structure.

[0547] As used herein, the term "C6-C 60 The term "aryl" may be a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms, and as used herein, the term "C6-C 60 The "arylene group" may be a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 60 Examples of the aryl group may include phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenanthrenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, phenyl, peryl, pentyl, heptaphenyl, tetraphenyl, peryl, hexyl, pentyl, rubinyl, coryl and ovaphenyl. 60 Aryl and C6-C 60 When the arylene groups each include two or more rings, the corresponding two or more rings may be fused to each other.

[0548] As used herein, the term "C1-C 60The term "heteroaryl" as used herein may be a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and including at least one heteroatom as a ring-forming atom in addition to carbon atoms. 60 The "heteroarylene group" may be a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and including at least one heteroatom as a ring-forming atom in addition to carbon atoms. 60 Examples of heteroaryl groups may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, benzoquinolyl, isoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, and naphthyridinyl. 60 Heteroaryl and C1-C 60 When the heteroarylene groups each include two or more rings, the corresponding two or more rings may be fused to each other.

[0549] The term "monovalent non-aromatic fused polycyclic group" as used in this article can be a monovalent group (e.g., 8 to 60 carbon atoms) having two or more rings fused to each other, only carbon atoms as ring atoms, and no aromaticity in its molecular structure as a whole. Examples of monovalent non-aromatic fused polycyclic groups can include indenyl, fluorenyl, spiro-bifluorenyl, benzofluorenyl, indenophenanthryl, and indenoanthryl. The term "divalent non-aromatic fused polycyclic group" as used in this article can be a divalent group having the same structure as a monovalent non-aromatic fused polycyclic group.

[0550] The term “monovalent non-aromatic fused heteropolycyclic group” as used herein may be a monovalent group (for example, having 1 to 60 carbon atoms) having two or more rings fused to each other and not having aromaticity in its molecular structure as a whole, which includes at least one heteroatom in addition to carbon atoms as a ring-constituting atom. Examples of the monovalent non-aromatic condensed heteropolycyclic group may include a pyrrolyl group, a thienyl group, a furyl group, an indolyl group, a benzindolyl group, a naphthoindolyl group, an isoindolyl group, a benzisoindolyl group, a naphthoisoindolyl group, a benzothiorolyl group, a benzofuranyl group, a carbazolyl group, a dibenzothiorolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzothiorolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group The term "divalent non-aromatic condensed heteropolycyclic group" as used herein may be a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group.

[0551] As used herein, the term "C6-C 60 Aryloxy" can be -O(A 102 ) represented by a group (wherein A 102 Can be C6-C 60 aryl), and as used herein the term "C6-C 60 "Arylthio" can be represented by -S(A 103 ) represented by a group (wherein, A 103 Can be C6-C 60 aryl).

[0552] As used herein, the term "C7-C 60 Aralkyl" may be -(A 104 )(A 105 ) represented by a group (wherein A 104 Can be C1-C 54 Alkylene, and A 105 Can be C6-C 59 aryl), and as used herein the term "C2-C 60 "Heteroaralkyl" can be composed of -(A 106)(A 107 ) represented by a group (wherein A 106 Can be C1-C 59 Alkylene, and A 107 Can be C1-C 59 heteroaryl).

[0553] In the specification, the group R 10a It can be:

[0554] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, or nitro;

[0555] C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 ),-C(=O)(Q 11 )、-S(=O)2(Q 11 ),-P(=O)(Q 11 )(Q 12 ) or any combination thereof;

[0556] C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 Heteroaralkyl, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 ),-C(=O)(Q 21 )、-S(=O)2(Q 21 ),-P(=O)(Q 21 )(Q 22 ) or any combination thereof; or

[0557] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 ),-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0558] In the manual, Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; C3-C 60 Carbocyclic or C1-C 60 Heterocyclic groups, each unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl or any combination thereof; C7-C 60 Aralkyl; or C2-C 60 Heteroaralkyl.

[0559] As used herein, the term "heteroatom" may be any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0560] In the specification, examples of the “third row transition metal” may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), and the like.

[0561] In the specification, the term "Ph" may refer to a phenyl group, the term "Me" may refer to a methyl group, the term "Et" may refer to an ethyl group, the terms "tert-Bu" and "Bu" may refer to phenyl groups. t ” may each refer to a tert-butyl group, and the term “OMe” may refer to a methoxy group.

[0562] The term "biphenyl" as used herein may be "phenyl substituted by phenyl". For example, "biphenyl" may be interpreted as having "C6-C 60 "substituted phenyl" having "aryl" as a substituent.

[0563] The term "terphenyl" as used herein may be "phenyl substituted by biphenyl". For example, "terphenyl" may be interpreted as having "phenyl substituted by C6-C 60 Aryl-substituted C6-C 60 "substituted phenyl" having "aryl" as a substituent.

[0564] In the specification, unless otherwise defined, the symbols * and *' each refer to a binding site to an adjacent atom in the corresponding formula or moiety.

[0565] In the specification, the terms "x-axis (x-axis direction)", "y-axis (y-axis direction)", and "z-axis (z-axis direction)" are not limited to the three axes (directions) in an orthogonal coordinate system (e.g., a Cartesian coordinate system), and can be interpreted in a broader sense than the aforementioned three axes (directions) in an orthogonal coordinate system. For example, the x-axis (x-axis direction), the y-axis (y-axis direction), and the z-axis (z-axis direction) can describe axes (directions) that are orthogonal to each other, or can describe axes (directions) in different directions that are not orthogonal to each other.

[0566] Hereinafter, the quantum dot according to the embodiment and the light emitting device according to the embodiment will be described in detail with reference to the following synthesis examples and examples. The phrase "using B instead of A" used in describing the synthesis examples means using B instead of A with the same molar equivalent.

[0567] Example

[0568] Example: Preparation of CuInGaS2 / ZnS Quantum Dots

[0569] (Synthesis of CuInGaS2 Core)

[0570] 0.2 mmol of CuI, 0.5 mmol of GaCl3, and 0.4 mmol of InCl3 were mixed with 5 mL of oleylamine and 5 mL of 1-octadecene (ODE) in a three-necked flask, and the mixture was degassed and stirred at 120°C for 30 minutes while removing oxygen and moisture inside the three-necked flask to prepare a first composition.

[0571] 1.8 mmol of 1 M sulfur (S)-oleylamine was added to the first composition in a nitrogen atmosphere, and the temperature was increased to 240° C. and maintained for a certain period of time to form a second composition.

[0572] 0.2 mmol of CuI, 0.5 mmol of GaCl 3 , 0.4 mmol of InCl 3 , 5 mL of oleylamine, and 5 mL of 1-ODE were added to the second composition in a nitrogen atmosphere, and the temperature was increased to 280° C. and maintained for a certain period of time to form a third composition.

[0573] The third composition was maintained for a certain period of time and cooled to 200° C., and 4.48 mmol of trioctylphosphine (TOP) was added thereto to react for a certain period of time, thereby synthesizing a final core.

[0574] (Synthesis of ZnS Shell)

[0575] The synthesized CuInGaS2 core was diluted with toluene and purified by precipitation using ethanol. 100 mmol of the purified CuInGaS2 / GaS quantum dots were dispersed in toluene, mixed with 100 mmol of oleylamine, and degassed at 120°C. 1.6 mmol of zinc acetate (Zn(OA)2) and 2.27 mmol of trioctylphosphine sulfide (TOP-S) were added thereto and reacted at 280°C or higher for 20 minutes to form a ZnS shell.

[0576] Comparative Example: Preparation of CuInGaS2 / ZnS Quantum Dots

[0577] (Synthesis of CIGS (CuInGaS2) Cores)

[0578] 0.2 mmol of CuI, 0.5 mmol of GaI3 and 0.4 mmol of InI3 were mixed with 5 mL of oleylamine, 0.85 mmol of trioctylphosphine oxide (TOPO) and 5 mL of trioctylamine (TOA) in a three-necked flask, and the mixture was degassed and stirred at 120°C for 30 minutes while removing oxygen and moisture inside the three-necked flask to form a reaction solution.

[0579] 1 to 2 mmol of S-oleylamine was added to the reaction solution under an argon atmosphere, and the temperature was raised to 240° C. and maintained for a certain period of time. After the reaction solution was cooled to 200° C., 4.48 mmol of trioctylphosphine (TOP) was injected thereinto and reacted for a certain period of time to synthesize CIGS (CuInGaS2) cores.

[0580] (Synthesis of ZnS Shell)

[0581] The synthesized CuInGaS2 core was diluted with toluene and purified by precipitation using ethanol. 100 mmol of the purified CuInGaS2 / GaS quantum dots were dispersed in toluene, mixed with 100 mmol of oleylamine, and degassed at 120°C. 1.6 mmol of zinc acetate (Zn(OA)2) and 2.27 mmol of trioctylphosphine sulfide (TOP-S) were added thereto and reacted at 280°C or higher for 20 minutes to form a ZnS shell.

[0582] Evaluation Example 1: Analysis of Nuclear Components

[0583] Each of the cores prepared in the above examples and comparative examples was purified and precipitated once in a solvent to remove impurities, and then dissolved in a nitric acid mixture and analyzed for core components. The results are shown in Table 1.

[0584] [Table 1]

[0585]

[0586] Referring to Table 1, it can be confirmed that the core according to the example has different element contents from the core according to the comparative example, for example, the core according to the example has a reduced copper content and an increased gallium content compared to the core according to the comparative example.

[0587] Evaluation Example 2: Evaluation of the Characteristics of Quantum Dots

[0588] For each of the cores and quantum dots prepared in the examples and comparative examples, the maximum emission wavelength, full width at half maximum (FWHM), quantum yield (QY), and tail value were evaluated. The results are shown in Table 2 (cores) and Table 3 (quantum dots), and are Figure 7 PL spectra of CIGS cores are shown in . Figure 7 is a graph of photoluminescence (PL) spectra of quantum dot cores according to Examples and Comparative Examples.

[0589] 2.8mL of toluene and 0.2mL of quantum dots are dispersed in a quartz cuvette, and the maximum emission wavelength and full width at half maximum are evaluated by analyzing the PL spectrum measured using a PL spectrometer and an ultraviolet-visible (UV-vis) spectrometer. The quantum yield is evaluated using an absolute quantum efficiency measurement device, and the tail value is expressed as the absolute value of the [right wavelength width-left wavelength width] value at 1 / 10 of the peak value of the maximum emission wavelength. For example, the tail value can be the absolute value of the [right half-width at half maximum-left half-width at half maximum] value at 1 / 10 of the peak value of the maximum emission wavelength.

[0590] [Table 2]

[0591]

[0592]

[0593] [Table 3]

[0594]

[0595] Refer to Table 2, Table 3 and Figure 7 , it can be confirmed that the core and the quantum dot according to the example have a narrow full width at half maximum, a low tail value, and an excellent quantum yield (QY) compared with the quantum dot and the core according to the comparative example.

[0596] Therefore, it can be confirmed that the quantum dots manufactured by the method of manufacturing quantum dots according to the embodiment may have a narrow full width at half maximum, a low tail value, and excellent quantum yield (QY).

[0597] The quantum dots according to the present disclosure can have a narrow full width at half maximum and a low tail value through additional injection of a precursor and high-temperature heat treatment. Therefore, by using the quantum dots according to the embodiment, high-quality optical components and electronic devices can be provided.

[0598] Embodiments have been disclosed herein, and although terms are employed, they are used and interpreted in a general and descriptive sense only and not for purposes of limitation. In some cases, as will be apparent to one of ordinary skill in the art, features, characteristics, and / or elements described in connection with an embodiment may be used alone or in combination with features, characteristics, and / or elements described in connection with other embodiments, unless specifically indicated otherwise. Accordingly, it will be understood by one of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present disclosure as set forth in the claims.

Claims

1. A quantum dot, wherein The quantum dots include: Core, including: copper; Group III elements; and Group VI elements; and A first shell covers the core, wherein The full width at half maximum of the emission wavelength spectrum of the core is equal to or less than 55 nm.

2. The quantum dot according to claim 1, wherein A tail value of the emission wavelength spectrum of the core is equal to or less than 15 nm.

3. The quantum dot according to claim 1, wherein The core includes Cu in an amount ranging from 4 parts by weight to 10 parts by weight based on a total of 100 parts by weight of the core.

4. The quantum dot according to claim 1, wherein The group III elements are aluminum, gallium, indium, thallium, or a combination thereof.

5. The quantum dot according to claim 1, wherein The Group VI element is oxygen, sulfur, selenium, tellurium or a combination thereof.

6. The quantum dot according to claim 1, wherein The core includes copper, indium, gallium and sulfur.

7. The quantum dot according to claim 6, wherein Based on 100 parts by weight of the core in total, the core comprises: Cu in an amount ranging from 4 parts by weight to 10 parts by weight; In in an amount ranging from 10 parts by weight to 20 parts by weight; Ga in an amount ranging from 30 parts by weight to 40 parts by weight; and S in an amount ranging from 40 parts by weight to 50 parts by weight.

8. The quantum dot according to claim 1, wherein The first shell includes a II-VI semiconductor compound, a III-VI semiconductor compound, a III-V semiconductor compound, or a combination thereof.

9. The quantum dot according to claim 8, wherein The II-VI semiconductor compound is CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe or a combination thereof.

10. The quantum dot according to claim 8, wherein The III-VI semiconductor compound is GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3 or a combination thereof.

11. The quantum dot according to claim 8, wherein The III-V semiconductor compound is GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or a combination thereof.

12. The quantum dot according to claim 1, wherein The quantum dots emit red light having a maximum emission wavelength in the range of 600 nm to 700 nm.

13. The quantum dot according to claim 1, wherein The quantum yield of the quantum dots is greater than 70% but not greater than 98%.

14. An optical component, wherein: The optical member includes the quantum dot according to any one of claims 1 to 13.

15. An electronic device, wherein: The electronic device comprises the quantum dot according to any one of claims 1 to 13.

16. The electronic device according to claim 15, wherein The electronic device further comprises: light source; and a color conversion member arranged in an optical path of light emitted from the light source, wherein The color conversion member includes the quantum dots.

17. A method for manufacturing quantum dots, wherein: The method comprises: fabricating a core comprising copper, a Group III element, and a Group VI element; and A first shell is produced covering the core, wherein The full width at half maximum of the emission wavelength spectrum of the core is equal to or less than 55 nm.

18. The method according to claim 17, wherein The manufacturing of the core comprises: The core is manufactured by using a composition for forming the core, and The composition includes a copper precursor, a Group III element-containing precursor, and a Group VI element-containing precursor.

19. The method according to claim 18, wherein The manufacturing of the core comprises: The composition for forming the core is heat-treated at a temperature higher than 240°C but lower than 320°C.

20. The method according to claim 17, wherein The manufacturing of the first shell includes: The first shell is manufactured by using a composition for forming the first shell, and The composition includes a Group II element-containing precursor and a Group VI element-containing precursor.

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