Method for measuring temperature change of microwave-assisted unit

Abstract

The method for measuring the temperature change of the microwave-assisted unit comprises the following steps: acquiring the temperature change of a reference unit; applying different voltages to the reference unit to obtain a thermal image of the reference unit so as to obtain resistance change rates at different temperatures; acquiring calibration parameters of the thermal scanner microscope according to the temperature change of the reference unit and the resistance change rate; and measuring, by the thermal scanner microscope, a temperature change of the microwave-assisted unit according to the calibration parameter. The method is simple and efficient, and can accurately measure the temperature change data of the microwave-assisted unit, thereby providing an important basis for product design and subsequent processes, and finally meeting the reliability requirement of the product.

Description

Technical Field

[0001] The present invention relates to the field of magnetic heads, and in particular to a method for measuring temperature changes of a microwave auxiliary unit. Background Art

[0002] As users demand ever-increasing storage capacity from computer hard drives, increasing magnetic storage density is essential to meet this increasing demand. Microwave-assisted magnetic recording (MAMR) is one of the key new product developments in the magnetic head industry in recent years to increase hard drive capacity.

[0003] Microwave-assisted magnetic recording (MAMR) incorporates a microwave-assisted unit compared to traditional magnetic heads. The surface temperature rise of this unit during operation plays a critical role in product reliability. The unit is nanometer-sized, typically only 15 to 20 nanometers, and its complex structure makes it difficult to measure its temperature rise.

[0004] Therefore, it is necessary to provide an improved method for measuring the temperature change of the microwave assist unit to effectively measure the temperature change of the microwave assist unit. Summary of the Invention

[0005] The purpose of the present invention is to provide an improved method for measuring the temperature change of a microwave-assisted unit. The method is simple and efficient, and can accurately measure the temperature change data of the microwave-assisted unit, thereby providing an important basis for product design and post-process technology, and ultimately meeting the reliability requirements of the product.

[0006] To achieve the above object, the method for measuring the temperature change of the microwave-assisted unit of the present invention comprises the following steps:

[0007] Obtaining the temperature change of the reference unit;

[0008] Applying different voltages to the reference unit to obtain a thermal image of the reference unit to obtain a resistance change rate at different temperatures;

[0009] obtaining calibration parameters of the thermal scanner microscope according to the temperature change of the reference unit and the resistance change rate; and

[0010] According to the calibration parameters, the thermal scanner microscope measures the temperature change of the microwave assisted unit.

[0011] Compared to existing technologies, the present invention's method for measuring the temperature change of a microwave-assisted unit utilizes calibration parameters of a thermal scanner microscope obtained by measuring a reference unit. Based on these calibration parameters, the microwave-assisted unit can be calibrated and measured to determine its temperature change. This temperature change provides important information for product design and subsequent processing steps, ultimately achieving product reliability requirements. Furthermore, the method is simple to operate, highly accurate, and suitable for widespread use.

[0012] As an embodiment, acquiring the temperature change of the reference unit includes: acquiring a temperature-resistance relationship coefficient of the reference unit, and acquiring the temperature change of the reference unit according to the temperature-resistance relationship coefficient.

[0013] As an embodiment, applying different voltages to the reference unit to obtain the thermal imaging image of the reference unit includes: measuring the resistance of the reference unit when no pressure is applied and when different voltages are applied.

[0014] As an embodiment, applying different voltages to the reference unit to obtain a thermal image of the reference unit further includes: obtaining a wire resistance of the microwave auxiliary unit and a wire resistance of a measurement system.

[0015] As an embodiment, the thermal scanner microscope measures the temperature change of the microwave assist unit, including: using the thermal scanner microscope to apply different voltages to the microwave assist unit to obtain a thermal imaging image of the microwave assist unit, and obtaining the temperature change of the microwave assist unit based on the calibration coefficient and the thermal imaging image of the microwave assist unit.

[0016] As an embodiment, the reference unit is a head-disk interface sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The flowchart of one embodiment of the method for measuring temperature changes of a microwave assist unit of the present invention is shown.

[0018] Figure 2 This is a temperature-resistance relationship diagram for the reference unit.

[0019] Figure 3 is a graph showing the relationship between the voltage applied to the microwave assist unit and the temperature change of the reference unit. DETAILED DESCRIPTION

[0020] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the connotations of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0021] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0022] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0024] The following examples further illustrate the present invention's method for measuring the temperature variation of a microwave-assisted unit. However, this method is not intended to limit the present invention. The present invention provides a simple and efficient method for measuring the temperature variation of a microwave-assisted unit, enabling accurate measurement of the unit's temperature variation. This method provides an important basis for product design and subsequent processing steps, ultimately achieving product reliability.

[0025] refer to Figure 1 In one embodiment of the method for measuring the temperature change of the microwave assisted unit of the present invention, the following steps are included:

[0026] S1, obtain the temperature change of the reference unit;

[0027] S2, applying different voltages to the reference unit to obtain a thermal image of the reference unit to obtain a resistance change rate at different temperatures;

[0028] S3, acquiring calibration parameters of the thermal scanner microscope according to the temperature change of the reference unit and the resistance change rate; and

[0029] S4, measuring the temperature change of the microwave assisted unit by the thermal scanner microscope according to the calibration parameters.

[0030] In the present invention's method for measuring the temperature variation of a microwave-assisted unit, calibration parameters for a thermal scanner microscope are obtained by measuring a reference unit. Based on these calibration parameters, the microwave-assisted unit can be calibrated and measured to determine its temperature variation. This temperature variation provides an important basis for product design and subsequent processing steps, ultimately achieving product reliability requirements. Furthermore, the method is simple and easy to operate, highly accurate, and suitable for widespread use.

[0031] Since the size of the head-disk interface sensor (i.e., HDI sensor) is similar to that of the microwave-assisted unit, the temperature distribution coincides with that of the microwave-assisted unit, and the temperature change is easy to obtain, the head-disk interface sensor (i.e., HDI sensor) is used as the reference unit of the microwave-assisted unit in the present invention.

[0032] In a specific embodiment, in S1, the temperature change of the reference unit is obtained. Specifically, the temperature resistance relationship coefficient (TCR) of the reference unit is obtained, and the temperature change (TR) of the reference unit is obtained based on the temperature resistance relationship coefficient. The temperature resistance relationship diagram of the reference unit is as follows: Figure 2 shown.

[0033] Next, in S2, different voltages are applied to the reference unit to obtain thermal images of the reference unit, thereby determining the resistance change rate at different temperatures. Specifically, applying different voltages to the reference unit to obtain thermal images of the reference unit includes measuring the resistance Rm0 of the reference unit without pressure, and measuring the resistance Rm of the reference unit under different voltages. Furthermore, the resistance RL of the microwave auxiliary unit's conductor and the resistance Rs of the measurement system's conductor are also obtained.

[0034] In step S3, calibration parameters are obtained based on the temperature change and resistance change rate of the reference unit. Finally, in step S4, thermal imaging images of the microwave assist unit under different applied voltage (input) conditions are obtained using a thermal scanning microscope. Specifically, the temperature change of the microwave assist unit is obtained based on the calibration coefficients and the thermal imaging images of the microwave assist unit. Figure 3Graph showing the relationship between the voltage (input) applied to the microwave assist unit and the temperature change (TR) of the reference unit.

[0035] As can be seen, the present invention's method for measuring the temperature change of a microwave-assisted unit utilizes calibration parameters of a thermal scanner microscope obtained by measuring a reference unit. Based on these calibration parameters, the microwave-assisted unit can be calibrated and measured to determine its temperature change. This temperature change provides an important basis for product design and subsequent processing steps, ultimately achieving product reliability requirements. Furthermore, this method is simple, easy to operate, and highly accurate, making it suitable for widespread use.

[0036] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for measuring temperature changes of microwave-assisted nano-units, characterized in that: The following steps are involved: Obtaining the temperature change of the reference unit; Applying different voltages to the reference unit to obtain a thermal image of the reference unit to obtain a resistance change rate at different temperatures; obtaining calibration parameters of the thermal scanner microscope based on the temperature change of the reference unit and the resistance change rate; and According to the calibration parameters, the thermal scanner microscope measures the temperature change of the microwave assisted unit.

2. The method for measuring temperature changes of a microwave-assisted unit according to claim 1, wherein: Acquiring the temperature change of the reference unit includes: acquiring a temperature-resistance relationship coefficient of the reference unit, and acquiring the temperature change of the reference unit according to the temperature-resistance relationship coefficient.

3. The method for measuring temperature changes of a microwave-assisted unit according to claim 1, wherein: Applying different voltages to the reference unit to obtain the thermal imaging image of the reference unit includes: measuring the resistance of the reference unit when no pressure is applied and when different voltages are applied.

4. The method for measuring temperature changes of a microwave-assisted unit according to claim 1, wherein: Applying different voltages to the reference unit to obtain a thermal image of the reference unit further includes: obtaining a wire resistance of the microwave auxiliary unit and a wire resistance of a measurement system.

5. The method for measuring temperature changes of a microwave-assisted unit according to claim 1, wherein: Measuring the temperature change of the microwave assist unit by the thermal scanner microscope includes: applying different voltages to the microwave assist unit using the thermal scanner microscope to obtain a thermal image of the microwave assist unit, and obtaining the temperature change of the microwave assist unit based on the calibration coefficient and the thermal image of the microwave assist unit.

6. The method for measuring temperature changes of a microwave-assisted unit according to claim 1, wherein: The reference unit is a head-disk interface sensor.

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